Substrate processing apparatus and substrate processing method

Abstract

To determine the quality of heater control based on a set temperature for each of a plurality of zones for controlling the temperatures of a plurality of substrates.SOLUTION: Provided is a substrate processing device that includes: a processing container where a plurality of substrates are processed; a plurality of heaters controlling, for each of a plurality of zones, the temperatures of the plurality of substrates accommodated inside the processing container; and a control unit controlling the operation of the plurality of heaters. The control unit controls the plurality of heaters to a preset set temperature for each of the plurality of zones to process the plurality of accommodated substrates, determines whether abnormality determination conditions are satisfied, the abnormality determination conditions including that an output value of at least one of the plurality heaters is equal to or less than a heater control resolution, and based on the results of the determination, controls to issue a warning for the set temperature for each of the plurality of zones.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] For example, Patent Document 1 discloses a substrate processing apparatus including a reaction tube, a heater cylinder in which heaters are provided for multiple zones, multiple heater temperature sensors that measure the temperatures of the heaters corresponding to each zone, and a temperature regulator that controls the power supplied to each heater based on the temperature measurement data to adjust the temperature for each zone. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-44282 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can determine whether heater control based on set temperatures for each of a plurality of zones for adjusting the temperatures of a plurality of substrates is satisfactory. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including a processing vessel in which a plurality of substrates are processed, a plurality of heaters that adjust the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones, and a control device that controls operation of the plurality of heaters, wherein the control device controls the plurality of heaters to preset set temperatures for each of the plurality of zones to process the plurality of accommodated substrates, determines whether an abnormality determination condition is satisfied, including that an output value of at least one of the plurality of heaters is equal to or less than a control resolution of the heater, and issues a warning regarding the set temperatures for each of the plurality of zones based on the result of the determination. death , calculating an appropriate value for the set temperature for each of the plurality of zones based on the central temperature of the set temperatures for each of the plurality of zones, and displaying the calculated set temperatures for each of the plurality of zones;A substrate processing apparatus is provided. [Effects of the Invention]

[0006] According to one aspect, it is possible to determine whether heater control based on set temperatures for each of a plurality of zones for adjusting the temperatures of a plurality of substrates is satisfactory. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. [Figure 2] 10A and 10B are diagrams showing examples of temperature control results by heaters in three substrate processing apparatuses. [Figure 3] 10A and 10B are diagrams showing an example of a temperature control result by a heater in the substrate processing apparatus. [Figure 4] FIG. 10 is a diagram for explaining a set temperature and a heater output result according to an embodiment. [Figure 5] 1 is a flowchart illustrating an example of a substrate processing method according to an embodiment. [Figure 6] FIG. 10 is a diagram showing an example of automatic calculation of a set temperature according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Substrate processing equipment] Referring to FIG. 1, the configuration of a substrate processing apparatus 1 according to an embodiment, which can perform a substrate processing method described below, will be described. FIG. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 of the present disclosure has a substantially cylindrical processing vessel 4 whose longitudinal direction is vertical. The processing vessel 4 has a double-tube structure including a cylindrical inner tube 6 and an outer tube 8 having a ceiling concentrically disposed outside the inner tube 6. The inner tube 6 and the outer tube 8 are formed of a heat-resistant material such as quartz. However, the substrate processing apparatus 1 may also have a single-tube structure having a single cylindrical body. Inside the processing vessel 4, substrate processing such as film formation processing is performed on multiple substrates.

[0010] The inner cylinder 6 and the outer cylinder 8 are held at their lower ends by a manifold 10 made of stainless steel or the like. The manifold 10 is fixed to, for example, a base plate (not shown). The manifold 10, together with the inner cylinder 6 and the outer cylinder 8, forms a substantially cylindrical internal space, and is therefore considered to form a part of the processing vessel 4.

[0011] That is, the processing vessel 4 comprises an inner tube 6 and an outer tube 8 made of a heat-resistant material such as quartz, and a manifold 10 made of stainless steel or the like, and the manifold 10 is provided at the lower side of the processing vessel 4 so as to support the inner tube 6 and the outer tube 8 from below.

[0012] The manifold 10 has a gas introduction part 20 that introduces a processing gas used for substrate processing into the processing vessel 4. Although Fig. 1 shows a configuration in which one gas introduction part 20 is provided, the present invention is not limited to this, and multiple gas introduction parts 20 may be provided depending on the type of gas used, etc.

[0013] An inlet pipe 22 for introducing a processing gas into the processing vessel 4 is connected to the gas inlet part 20. The inlet pipe 22 is provided with a flow rate regulator 24 such as a mass flow controller for adjusting the gas flow rate, a valve (not shown), and the like.

[0014] The manifold 10 also has a gas exhaust unit 30 that exhausts the inside of the processing vessel 4. The gas exhaust unit 30 is connected to an exhaust pipe 36 that includes a vacuum pump 32 that can control the pressure reduction inside the processing vessel 4, a variable valve 34, and the like.

[0015] A furnace throat 40 is formed at the lower end of the manifold 10, and a disk-shaped lid 42 made of, for example, stainless steel is provided on the furnace throat 40. The lid 42 is provided so as to be able to move up and down by an elevating mechanism 44 that functions as, for example, a boat elevator, and is configured to be able to hermetically seal the furnace throat 40.

[0016] An insulated cylinder 46 made of, for example, quartz is placed on the lid 42. A wafer boat 48 made of, for example, quartz is placed on the insulated cylinder 46. The wafer boat 48 holds, for example, approximately 50 to 200 substrates W in a horizontal position in multiple stages at predetermined intervals. An example of the substrates W is a wafer having a diameter of 200 mm to 300 mm. The plurality of substrates W placed on the wafer boat 48 constitutes one batch, and various substrate processes are performed on each batch.

[0017] The wafer boat 48 is loaded (carried into) the processing vessel 4 by raising the lid 42 using the lifting mechanism 44, and various substrate processes are performed on the substrates W held in the wafer boat 48. After the various substrate processes are performed, the lid 42 is lowered using the lifting mechanism 44, and the wafer boat 48 is unloaded (carried out) from the processing vessel 4 to a loading area below. The wafer boat 48 is an example of a boat configured to store multiple substrates vertically within the processing vessel 4.

[0018] A heater 60, for example, having a cylindrical shape, is provided on the outer periphery of the processing vessel 4, which is capable of heating and controlling the processing vessel 4 to a predetermined temperature. The heater 60 has a plurality of heaters 60a to 60g which adjust the temperatures of the plurality of substrates W accommodated inside the processing vessel 4 for each of a plurality of zones.

[0019] The heater 60 is provided with heaters 60a to 60g arranged vertically from top to bottom. The heaters 60a to 60g are configured so that the heater output values ​​(power, heat generation amount) can be controlled independently by power controllers 62a to 62g, respectively. Temperature sensors 65a to 65g are also provided inside the inner cylinder 6 corresponding to the heaters 60a to 60g. Thermocouples and resistance thermometers, for example, can be used as the temperature sensors 65a to 65g. The temperature sensors 65a to 65g are also collectively referred to as temperature sensors 65.

[0020] The heaters 60a to 60g are provided for each zone corresponding to the zones when the area of ​​the wafer boat 48 where the substrates are accommodated is divided into a plurality of zones. In the substrate processing apparatus 1 of the present disclosure, the wafer boat 48 is divided into seven zones, for example. The seven zones are called "BTM," "CTR-1," "CTR-2," "CTR-3," "CTR-4," "CTR-5," and "TOP," in order from the bottom up.

[0021] Heater 60a heats multiple substrates in the "TOP" zone. Temperature sensor 65a measures the temperature of the "TOP" zone in inner cylinder 6. Hereinafter, the temperature of each zone in inner cylinder 6 will also be simply referred to as the "zone temperature." Heater 60b heats multiple substrates in the "CTR-5" zone. Temperature sensor 65b measures the temperature of the "CTR-5" zone. Heater 60c heats multiple substrates in the "CTR-4" zone. Temperature sensor 65c measures the temperature of the "CTR-4" zone. Heater 60d heats multiple substrates in the "CTR-3" zone. Temperature sensor 65d measures the temperature of the "CTR-3" zone. Heater 60e heats multiple substrates in the "CTR-2" zone. Temperature sensor 65e measures the temperature of the "CTR-2" zone. Heater 60f heats multiple substrates in the "CTR-1" zone. Temperature sensor 65f measures the temperature of the "CTR-1" zone. A heater 60g heats the substrates in the "BTM" zone. A temperature sensor 65g measures the temperature in the "BTM" zone.

[0022] The control device 100 controls the overall operation of the substrate processing apparatus 1. The control device 100 includes a CPU 101 and a memory 102. The CPU 101 is a computer for controlling the overall operation of the substrate processing apparatus 1.

[0023] The memory 102 stores control programs for implementing various processes performed in the substrate processing apparatus 1 under the control of the control device 100, and recipes in which substrate processing procedures and the like are set for each step. The memory 102 also stores various programs for causing each unit of the substrate processing apparatus 1 to process a substrate according to the film formation conditions (film formation steps) set in the recipe. The various programs may be stored in a storage medium and then stored in the memory 102. The storage medium may be a hard disk or a semiconductor memory, or may be a portable medium such as a CD-ROM, a DVD, or a flash memory. These programs, parameters, and various data may be appropriately transmitted to the memory 102 from another device or a host computer via communication means such as wired or wireless. The control device 100 may be a control device provided separately from the substrate processing apparatus 1. The memory 102 may be a storage device provided separately from the substrate processing apparatus 1.

[0024] The detection signals from the temperature sensors 65a to 65g are transmitted to the control device 100. The control device 100 calculates the setting values ​​of the power controllers 62a to 62g based on the detection signals from the temperature sensors 65a to 65g and outputs the calculated setting values ​​to each of the power controllers 62a to 62g, thereby independently controlling the output value (Power) of each of the heaters 60a to 60g.

[0025] [Temperature control result example] 2 is a diagram showing an example of the temperature control results by the heater 60 in three different substrate processing apparatuses 1 (apparatus a, apparatus b, and apparatus c). Apparatus a, apparatus b, and apparatus c are different substrate processing apparatuses having the same configuration as shown in FIG.

[0026] In the apparatuses a to c used to obtain the results shown in FIG. 2, the wafer boat 48 was divided into six zones, namely, "BTM," "CTR-1," "CTR-2," "CTR-3," "CTR-4," and "TOP," from bottom to top, and the temperature was controlled by six heaters 60 for each zone. The set temperature of each zone is indicated by Set (°C). The actual temperature of each zone measured by the temperature sensor 65 installed in each zone (actual temperature) is indicated by Act (°C). The output value of each heater 60 is indicated by Power (%). Power (%) is the ratio (%) of the output value (power) of the heater 60 when the rated power that can be supplied from each heater 60 to each zone is taken as 100%.

[0027] Set (°C) is set to the temperature at which the film thickness of the substrate W is checked for each zone when the substrate processing apparatus 1 (apparatus a in FIG. 2) is started up, and the temperature is set to the temperature at which the film will have the expected thickness. The set temperature calculated using apparatus a, shown as Set (°C) in FIG. 2(a), was also applied to apparatus b and apparatus c in FIGS. 2(b) and (c).

[0028] The set temperature for each zone may have a temperature gradient (tilt) to obtain a certain process performance. For example, the set temperature for each zone shown in Set (°C) in FIGS. 2(a) to 2(c) is 400°C from "TOP" to "CTR2," but is set to 391.5°C for "CTR1" and 390°C for "BTM." For example, in the processing vessel 4 accommodating the wafer boat 48 shown in FIG. 1, heat rises from bottom to top. Therefore, the set temperatures for the "BTM" and "CTR1" zones are set slightly lower than those of the zones above them.

[0029] The output of each heater corresponding to each zone was controlled so that the set temperature of each zone was reached. As a result, in device a, as shown in the graph in Figure 2(a), the temperature (Act) of each zone measured by the temperature sensor 65 in each zone was able to be controlled to the set temperature (target) in all zones, "TOP," "CTR1," and "BTM." Note that the graphs in Figures 2(a) to (c) do not include temperature control for zones other than "TOP," "CTR1," and "BTM." As shown in the table in Figure 2(a), the Power, which indicates the heater output value, was lowest at 0.2% in the "CTR1" zone and was above 0.2% in all zones, resulting in successful control of the heater 60.

[0030] On the other hand, in the apparatuses b and c, as shown in the tables of Figures 2(b) and 2(c), the power indicating the heater output value was 0% in the "CTR1" zone, resulting in failure to control the heater 60. From these results, it was found that there are cases where the temperature can be controlled to the set temperature for each zone and cases where it cannot, depending on the individual differences in the substrate processing apparatus 1.

[0031] In other words, in the two devices b and c used in Figures 2(b) and (c), the actual measured temperature (Act) was higher than the set temperature (Set), causing the heater output value (Power) to be 0%, making it impossible to control. The existence of zones that could not be controlled to the set temperature in this way made it impossible to reproduce consistent process performance in substrate processing.

[0032] One of the reasons why the heater output value (Power) in the "CTR1" zone became 0% and temperature control by heater 60 became impossible is that when adjacent zones are controlled to different set temperatures, temperature interference occurs between the zones, making temperature control difficult.

[0033] 3 is a diagram showing an example of the results of temperature control by heaters 60 for set temperatures for each zone in three patterns with different temperature gradients (tilts) using the same substrate processing apparatus 1. Here, the substrate processing apparatus 1 shown in FIG. 1 was used. That is, the wafer boat 48 was divided into seven zones, namely, "BTM," "CTR-1," "CTR-2," "CTR-3," "CTR-4," "CTR-5," and "TOP" from the bottom, and temperature control was performed by seven heaters 60 for each zone.

[0034] Figure 3(a) shows the set temperatures for each zone for three patterns with different temperature gradients (tilts). In pattern 1, the set temperatures (Set) for all seven zones are set to 500°C. In pattern 2, the set temperatures (Set) for each of the "TOP" and "CTR-5" to "CTR-2" zones are set to 500°C, the set temperature for each of the "CTR-1" zones is set to 495°C, and the set temperature for each of the "BTM" zones is set to 490°C. In pattern 3, the set temperatures (Set) for each of the "TOP" and "CTR-5" to "CTR-2" zones are set to 500°C, and the set temperatures for each of the "CTR-1" and "BTM" zones are set to 490°C.

[0035] The vertical axis in Fig. 3(b) represents temperature, and indicates the measured temperature and the set temperature (target) of each zone in the inner cylinder 6 of the processing vessel 4. The vertical axis in Fig. 3(c) represents the heater output value (Power) of each zone.

[0036] The horizontal axis in Figures 3(b) and (c) represents time. Temperature control according to pattern 1 was performed from 0 to 60 minutes. Temperature control according to pattern 2 was performed from 60 to 120 minutes. Temperature control according to pattern 1 was performed from 120 to 180 minutes.

[0037] As a result, for the set temperatures of Pattern 1 and Pattern 2, the heater output value was controllable and the temperature of each zone was regulated accurately. On the other hand, for the set temperature of Pattern 3, the heater 60 output value for the "CTR-1" zone was 0%, making it impossible to control (PB: Power CTR-1).

[0038] In other words, at the set temperature with the temperature gradient of pattern 3, as shown in Figure 4(a), the output value (power) of heater 60 of "CTR-1" became 0%, and a certain process performance could not be reproduced in substrate processing.

[0039] On the other hand, in the case of a set temperature having a temperature gradient of pattern 2, or in the case of a set temperature having a gentle temperature gradient as shown in FIG. 4(b), the output value of the heater 60 does not become 0%, and the heater 60 can be controlled.

[0040] As described above, the substrate processing method of the present disclosure determines whether the heater 60 is controllable or uncontrollable, and issues a warning as necessary. The substrate processing method of the present disclosure also automatically calculates and displays a set temperature with an appropriate temperature gradient. The substrate processing method of the present disclosure will be described below with reference to FIGS. 5 and 6.

[0041] Fig. 5 is a flowchart showing an example of a substrate processing method according to an embodiment. Fig. 6 is a diagram showing an example of automatic calculation of a set temperature according to an embodiment. The substrate processing method shown in Fig. 5 is controlled by, for example, the control device 100 and executed by the substrate processing apparatus 1.

[0042] Step S1 of this process is performed when creating a recipe, and steps S3 to S9 are performed after substrate processing. The substrate processing is, for example, a film formation process. Below, an example will be described in which each unit of the substrate processing apparatus 1 processes a substrate according to the film formation conditions (film formation steps) set in the recipe.

[0043] In step S1, the control device 100 specifies (sets) a set temperature for each zone in a film formation step of a recipe. The control device 100 may set the set temperature for each zone in the recipe for each film formation step in accordance with an operation by a user (operator). The set temperature for each zone, which is the result of automatically calculating a set temperature with an appropriate temperature gradient (described later), may be automatically set in the recipe for each film formation step.

[0044] When the film formation step starts, as shown in step S2, the heaters 60 are controlled so that the temperature of each zone reaches the set temperature for each of the zones set in the recipe, and the film formation processes accommodated are performed.

[0045] After substrate processing (film formation), in step S3, the control device 100 determines whether there is a step in which the output value (Power) of at least any of the heaters 60 is 0% for T seconds or more. If it is determined in step S3 that there is no step in which the heater output value is 0% for T seconds or more, the process proceeds to step S5, where the control device 100 determines that the set temperature for each zone set in the recipe is normal and that the heater 60 can be controlled, and ends this process.

[0046] On the other hand, if it is determined in step S3 that there is a step in which the heater output value is 0% for T seconds or more, the process proceeds to step S7. In step S7, the control device 100 determines that the set temperature for each zone set in the recipe is abnormal and that the heater cannot be controlled, and issues a warning (alarm).

[0047] Next, in step S9, the control device 100 automatically calculates the optimum set temperature for each zone, displays the calculated optimum set temperature for each zone, and ends this process. For example, FIG. 4(b) shows an example of a display of the calculated optimum set temperature for each zone. Note that in step S9, the control device 100 may automatically assign (set) the calculated set temperatures for each of the multiple zones to the corresponding steps of a recipe for executing substrate processing.

[0048] An example of a method for automatically calculating the optimal set temperature for each zone in step S9 will be described with reference to FIG. 6. In FIG. 6, the horizontal axis represents the zone, and the vertical axis represents the temperature. For the set temperatures for each of the seven zones shown in FIG. 6(a), the control device 100 uses the center temperature CT (the temperature of "CTR-3" in this example) as a reference, and linearly interpolates adjacent set temperatures using, for example, the least squares method, with the reference center temperature CT as an anchor. The control device 100 displays the linearly interpolated set temperature and indicates that the heater can be controlled at the displayed set temperature for each zone. The device that displays the set temperature may be the control device 100 or another information processing device that can communicate with the control device 100.

[0049] [Abnormality judgment conditions] The determination condition shown in step S3 in Fig. 5 is an example of the abnormality determination condition. The "T" in the determination condition "among the plurality of heaters 60, the state in which the output value (Power) is 0% is T seconds or more" may be the time for each film formation (substrate processing) film formation step, or may be a time shorter than the time for each film formation step.

[0050] Furthermore, the "T" in the judgment condition may be the continuous time during which the heater output value is in a 0% state or the total time within the film formation step time, or it may be the ratio of the time during which the heater output value is in a 0% state to the film formation step time.

[0051] Furthermore, the abnormality determination condition is not limited to "the state in which the output value (Power) of the heaters 60 is 0% for T seconds or more." For example, if the output value of each heater in each zone is 0.2% or less, the heater 60 may be controlled to reach the set temperature in each zone, resulting in almost no output value (almost 0%), and the heater 60 may be determined to be in an uncontrollable state. That is, in order to be able to control the heater 60 so that each zone reaches the set temperature, the output power of each zone may be defined as exceeding at least 0.2%. In other words, as an example of the abnormality determination condition, it is not limited to the time when the heater output value reaches 0%, but "the state in which the output value (Power) of any heater 60 is 0.2% or less for T seconds or more" may be used as the determination condition.

[0052] However, the output power values ​​described above are merely examples, and the control resolution varies depending on the configuration of the substrate processing apparatus 1, etc. Therefore, an example of an abnormality determination condition is not limited to whether the heater output value is 0.2% or less as the determination criterion, but may be "the state in which the output value of any heater 60 among the multiple heaters 60 is less than the heater control resolution for T seconds or more." For example, the heater control resolution may be 0.1.

[0053] According to the substrate processing method and substrate processing apparatus 1 described above, it is possible to determine and notify whether heater control based on set temperatures for each of a plurality of zones for regulating the temperatures of a plurality of substrates is satisfactory.

[0054] The present invention is not limited to the configurations described in the above embodiments, and may be combined with other elements. These aspects can be modified without departing from the spirit of the present invention and can be appropriately determined depending on the application form. Furthermore, the matters described in the multiple embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0055] 1. Substrate processing equipment 4 Processing container 48 wafer boats 60a~60g heater 65a~65g temperature sensor 100 control device

Claims

1. a processing vessel in which a plurality of substrates are processed; a plurality of heaters for controlling the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones; a control device that controls operation of the plurality of heaters, The control device controlling the plurality of heaters to preset temperatures for each of the plurality of zones, and processing the plurality of substrates accommodated therein; determining whether or not an abnormality determination condition is satisfied, including the output value of at least one of the plurality of heaters being equal to or less than the control resolution of the heater; Based on the result of the determination, a warning is issued for the set temperature for each of the plurality of zones; calculating an appropriate value of the set temperature for each of the plurality of zones based on a central temperature of the set temperature for each of the plurality of zones; displaying the calculated set temperatures for each of the plurality of zones; Substrate processing equipment.

2. A processing vessel in which a plurality of substrates are processed; a plurality of heaters for controlling the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones; a control device that controls operation of the plurality of heaters, The control device controlling the plurality of heaters to preset temperatures for each of the plurality of zones, and processing the plurality of substrates accommodated therein; determining whether or not an abnormality determination condition is satisfied, including the output value of at least one of the plurality of heaters being equal to or less than the control resolution of the heater, based on the ratio of the time during which the output value of the heater is equal to or less than the control resolution of the heater relative to the processing time of the plurality of substrates; Based on the result of the determination, a control is performed so as to issue a warning regarding the set temperature for each of the plurality of zones. Substrate processing equipment.

3. A processing vessel in which a plurality of substrates are processed; a plurality of heaters for controlling the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones; a control device that controls operation of the plurality of heaters, The control device controlling the plurality of heaters to preset temperatures for each of the plurality of zones, and processing the plurality of substrates accommodated therein; determining whether or not an abnormality determination condition is satisfied, including the output value of at least one of the plurality of heaters being equal to or less than the control resolution of the heater, based on the total time or continuous time during which the output value of the heater is equal to or less than the control resolution of the heater during the processing time of the plurality of substrates; Based on the result of the determination, a control is performed so as to issue a warning regarding the set temperature for each of the plurality of zones. Substrate processing equipment.

4. The control resolution of the heater is set to 0.1% as a ratio of the heater output value when the rated power that can be supplied from the heater to the corresponding zone is set to 100%. The substrate processing apparatus according to claim 1 .

5. a boat configured to accommodate the plurality of substrates vertically within the processing vessel; the set temperatures for each of the plurality of zones are set for each of the plurality of zones in a vertical direction of the boat, The control device adjusting the temperatures of the plurality of heaters to set temperatures for each of the plurality of zones in the vertical direction of the boat; The substrate processing apparatus according to claim 1 .

6. The control device determining whether the abnormality determination condition is satisfied after processing the plurality of substrates; The substrate processing apparatus according to claim 1 .

7. The control device automatically setting the calculated set temperatures for each of the plurality of zones in a recipe for performing the substrate processing; The substrate processing apparatus according to claim 1 .

8. a processing vessel in which a plurality of substrates are processed; a plurality of heaters for controlling the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones; A substrate processing method performed in a substrate processing apparatus comprising: controlling the heaters to preset temperatures for each of the zones, and processing the substrates accommodated therein; determining whether or not an abnormality determination condition is satisfied, the abnormality determination condition including the output value of at least one of the plurality of heaters being equal to or less than the control resolution of the heater; and issuing a warning about the set temperature for each of the plurality of zones based on the result of the determination. The substrate processing method further includes a step of calculating an appropriate value for the set temperature for each of the plurality of zones based on a central temperature of the set temperatures for each of the plurality of zones, and displaying the calculated set temperatures for each of the plurality of zones.

9. A processing vessel in which a plurality of substrates are processed; a plurality of heaters for controlling the temperatures of the plurality of substrates accommodated inside the processing vessel for each of a plurality of zones; A substrate processing method performed in a substrate processing apparatus comprising: controlling the heaters to preset temperatures for each of the zones, and processing the substrates accommodated therein; determining whether or not an abnormality determination condition including an output value of at least one of the plurality of heaters being equal to or less than the control resolution of the heater is satisfied based on a total time or continuous time during which the output value of the heater is equal to or less than the control resolution of the heater during processing of the plurality of substrates; and issuing a warning regarding the set temperature for each of the plurality of zones based on the result of the determination. Substrate processing method.

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