Substrate processing apparatus, processing container, substrate processing method, semiconductor device manufacturing method and program

Abstract

The present invention is capable of improving uniformity of the in-plane thickness of a film formed on a substrate.　The present invention includes a container capable of accommodating a substrate, a gas channel formed contiguously with the container, and a connection part connecting a wall forming the container and a wall forming the gas channel, wherein an extension line of the wall forming the container at the connection part and an extension line of the wall forming the gas channel at the connection part are each formed so as to intersect an axis oriented toward the gas channel from the center of the container.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a processing vessel, Substrate processing method, The present invention relates to a method and program for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that uses a reaction tube in which a processing gas is supplied to a substrate from a horizontal direction and exhausted from the horizontal direction. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-172204 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned apparatus, vortices may occur when the process gas collides with the wall when exhausted from the reaction tube. If vortices occur in the reaction tube, the process gas may stagnate or the partial pressure of the process gas may increase, which may result in a deterioration in the in-plane film thickness uniformity of the substrate during substrate processing.

[0005] An object of the present disclosure is to provide a technique capable of improving the in-plane film thickness uniformity of a film formed on a substrate. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a container capable of accommodating a substrate; a gas flow path formed continuously with the container; a connecting portion that connects a wall that constitutes the container and a wall that constitutes the gas flow path; Equipped with An extension line of the wall constituting the container at the connection part and an extension line of the wall constituting the gas flow path at the connection part are both configured to intersect with an axis extending from the center of the container toward the gas flow path. Technology is provided. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to improve the in-plane film thickness uniformity of a film formed on a substrate. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a longitudinal cross-sectional view showing an outline of a substrate processing apparatus according to an aspect of the present disclosure. [Figure 2] FIG. 1 is a cross-sectional view illustrating a processing vessel according to one embodiment of the present disclosure. [Figure 3] FIG. 2 is a diagram illustrating details of a gas supply unit according to one embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram showing details of a gas supply hole of the nozzle in FIG. [Figure 5] FIG. 1 is a schematic configuration diagram of a controller of a substrate processing apparatus according to an embodiment of the present disclosure, showing a control system of the controller in a block diagram. [Figure 6] 1A and 1B are diagrams illustrating a substrate processing sequence according to one aspect of the present disclosure. [Figure 7] FIG. 7 is a flow chart showing details of the film treatment step in FIG. 6. [Figure 8] 8(A) to 8(C) are diagrams showing examples of chemical structural formulas of gases according to one embodiment of the present disclosure. [Figure 9] 9(A) to 9(C) are explanatory diagrams illustrating gases that can be used in one embodiment of the present disclosure. [Figure 10] FIG. 10(A) is a diagram illustrating the gas flow in the reaction tube in one embodiment of the present disclosure, and FIG. 10(B) is a diagram illustrating the gas flow in the reaction tube in a comparative example. [Figure 11]FIG. 11(A) is a diagram illustrating a gas flow path according to one embodiment of the present disclosure, and FIG. 11(B) is a diagram illustrating a modified example of the gas flow path according to one embodiment of the present disclosure. [Figure 12] FIG. 10 is a cross-sectional view illustrating a modification of the processing vessel according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following description will be made with reference to Figures 1 to 12. Note that all drawings used in the following description are schematic, and the dimensional relationships, ratios, etc. of elements shown in the drawings do not necessarily match those of reality. Furthermore, the dimensional relationships, ratios, etc. of elements between multiple drawings do not necessarily match.

[0010] (1) Configuration of the substrate processing equipment The configuration of the substrate processing apparatus 10 will be described with reference to FIG.

[0011] The substrate processing apparatus 10 includes a reaction tube storage chamber 206, which includes a reaction tube 210 that is a cylindrical container extending in the vertical direction, a heater 211 as a heating unit (furnace body) installed on the outer periphery of the reaction tube 210, a gas supply structure 212, and a gas exhaust structure 213. The gas supply structure 212 may include an upstream rectifier 214 and nozzles 223, 224, and 225, which will be described later. The gas exhaust structure 213 may include a downstream rectifier 215, which will be described later. The reaction tube 210 is configured to be able to accommodate a substrate S.

[0012] The gas supply structure 212 is provided upstream of the reaction tube 210 in the gas flow direction, and gas is supplied from the gas supply structure 212 into the reaction tube 210, and the gas is supplied horizontally to the substrate S. The gas exhaust structure 213 is provided downstream of the reaction tube 210 in the gas flow direction, and the gas inside the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212, the inside of the reaction tube 210, and the gas exhaust structure 213 are horizontally connected to each other.

[0013] An upstream rectifier 214 for rectifying the flow of gas supplied from the gas supply structure 212 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the gas supply structure 212. In addition, a downstream rectifier 215 for rectifying the flow of gas discharged from the reaction tube 210 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213. The lower end of the reaction tube 210 is supported by a manifold 216.

[0014] The reaction tube 210, the upstream rectifier 214, and the downstream rectifier 215 have a continuous structure and are made of a material such as quartz or SiC. These are made of a heat-transmitting member that transmits heat radiated from the heater 211. The heat from the heater 211 heats the substrate S and the gas.

[0015] The gas supply structure 212 is connected to a gas supply pipe 251, a gas supply pipe 261, and a gas supply pipe 271, and has a distribution unit 125 that distributes the gas supplied from each gas supply pipe. Nozzles 223, 224, and 225 are provided downstream of the distribution unit 125. A plurality of nozzles 223, 224, and 225 are connected downstream of the gas supply pipe 251, the gas supply pipe 261, and the gas supply pipe 271, respectively, via the distribution unit 125. The nozzles 223, 224, and 225 are arranged side by side substantially horizontally. Furthermore, a plurality of these nozzles 223, 224, and 225 are arranged vertically, each at a position corresponding to the substrate S. Each nozzle is also called a gas discharge unit.

[0016] The distribution unit 125 is configured so that gases are supplied from the gas supply pipe 251 to the plurality of nozzles 223, from the gas supply pipe 261 to the plurality of nozzles 224, and from the gas supply pipe 271 to the plurality of nozzles 225. For example, a gas flow path is configured for each combination of gas supply pipe and nozzle. In this way, the gases supplied from the gas supply pipes do not mix, and therefore the generation of particles that may occur due to gas mixing in the distribution unit 125 can be suppressed.

[0017] The upstream rectifier 214 has a supply-side flow path 227 as a gas flow path and a rectifier plate 226 as a rectifier. The rectifier plate 226 extends in the horizontal direction. Here, the horizontal direction refers to the direction of the side wall of the supply-side flow path 227. Multiple rectifier plates 226 are arranged in the vertical direction. The rectifier plates 226 are fixed tightly to the side wall of the supply-side flow path 227 and are configured so that gas does not move beyond the rectifier plate 226 to adjacent areas below or above. By preventing gas from moving beyond the rectifier plate 226, the gas flow described below can be reliably formed.

[0018] The rectifying plates 226 extend in the horizontal direction and have a continuous structure without holes. Each rectifying plate 226 is provided at a position corresponding to each substrate S. Nozzles 223, 224, and 225 are arranged between the rectifying plates 226 and between the rectifying plates 226 and the supply-side flow path 227.

[0019] The gases ejected from the nozzles 223, 224, and 225 are supplied to the surface of the substrate S. That is, when viewed from the substrate S, the gases are supplied from the lateral direction of the substrate S. The current plate 226 extends horizontally and has a continuous structure without holes, so that the main flow of the gas is restricted from moving vertically and moves horizontally. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform across the vertical direction.

[0020] The downstream rectifier 215 is configured so that, when the substrates S are supported on the substrate support 300 described below, the ceiling is higher than the uppermost substrate S, and the bottom is lower than the lowermost substrate S on the substrate support 300. The substrate support 300 is used as a substrate holder that holds the substrates S.

[0021] The downstream rectifying section 215 has an exhaust-side flow path 231 as a gas flow path, and a rectifying plate 232 as a rectifying section. The rectifying plate 232 extends in the horizontal direction. The horizontal direction here refers to the direction of the side wall of the exhaust-side flow path 231. Furthermore, multiple rectifying plates 232 are arranged in the vertical direction. The rectifying plate 232 is fixed without any gaps to the side wall of the exhaust-side flow path 231, and is configured to prevent gas from moving beyond the rectifying plate 232 to adjacent areas below or above. By preventing gas from moving beyond the rectifying plate 232, the gas flow described below can be reliably formed. A flange 233 is provided on the side of the exhaust-side flow path 231 that comes into contact with the gas exhaust structure 213.

[0022] The rectifying plate 232 has a continuous structure that extends horizontally and has no holes. Each rectifying plate 232 is provided at a position corresponding to each substrate S. It is desirable that the corresponding rectifying plate 226 and rectifying plate 232 have the same height. Furthermore, when processing the substrate S, it is desirable to align the height of the substrate S with the height of the rectifying plate 226 and the rectifying plate 232. With this structure, gas supplied from each nozzle forms a horizontal flow passing over the substrate S and the rectifying plate 232, as shown by the arrows in the figure. With the rectifying plate 232 structured in this way, the pressure loss of the gas exhausted from each substrate S can be made uniform. Therefore, the gas flow passing through each substrate S is formed horizontally toward the gas exhaust structure 213, while vertical flow is suppressed.

[0023] By providing the rectifying plates 226 and 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S, and therefore a horizontal gas flow in which the flow in the vertical direction is suppressed can be reliably formed from the rectifying plates 226, over the substrates S, and to the rectifying plates 232. Therefore, the inter-surface film thickness uniformity of the multiple substrates S can be improved.

[0024] Gas exhaust structure 213 is provided downstream of downstream rectifier 215. Gas exhaust structure 213 is mainly composed of housing 241 and gas exhaust pipe connection part 242. A flange 243 is provided on the downstream rectifier 215 side of housing 241. Because gas exhaust structure 213 is made of metal and downstream rectifier 215 is made of quartz, flange 233 and flange 243 are fixed together with screws or the like via a buffer material such as an O-ring. It is desirable to arrange flange 243 on the outside of heater 211 so that the effect of heater 211 on the O-ring can be suppressed.

[0025] The gas exhaust structure 213 communicates with the space of the downstream-side rectifier 215. The exhaust-side flow path 231 and the housing 241 have a structure in which the height is continuous. The ceiling of the exhaust-side flow path 231 is configured to be at the same height as the ceiling of the housing 241, and the bottom of the exhaust-side flow path 231 is configured to be at the same height as the bottom of the housing 241. An exhaust hole 244 is formed on the downstream side of the housing 241, below or in the horizontal direction. The gas exhaust structure 213 is provided laterally of the reaction tube 210, and is a lateral exhaust structure that exhausts gas from the lateral direction of the substrate S.

[0026] The gas that has passed through the downstream-side straightening section 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure 213 does not have a configuration such as a straightening plate, a gas flow including a vertical direction is formed toward the exhaust hole 244.

[0027] The substrate support 300 includes a partition plate support portion 310 and a base portion 311, and is housed within the reaction tube 210. The substrate S is placed directly below the inner wall of the top plate of the reaction tube 210. The substrate support 300 also transfers the substrate S using a vacuum transfer robot through a substrate loading port (not shown) within the transfer chamber 217, and transports the transferred substrate S into the reaction tube 210 to perform processing to form a thin film on the surface of the substrate S. The substrate loading port is provided, for example, in a side wall of the transfer chamber 217.

[0028] A plurality of disk-shaped partition plates 314 are fixed to the partition plate support portion 310 at a predetermined pitch. The partition plates 314 are configured to support the substrates S at predetermined intervals between them. The partition plates 314 are disposed directly below the substrates S, and are disposed above and / or below the substrates S. The partition plates 314 separate the spaces between the substrates S.

[0029] A plurality of substrates S are placed at predetermined intervals on the substrate support 300. The predetermined intervals between the plurality of substrates S placed on the substrate support 300 are the same as the vertical intervals between the partition plates 314 fixed to the partition plate support parts 310. The diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0030] The substrate support 300 supports a plurality of substrates S, for example, five substrates S, in multiple stages in the vertical direction (perpendicular direction). Note that, although an example in which five substrates S are supported on the substrate support 300 is shown here, the present invention is not limited to this. For example, the substrate support 300 may be configured to be able to support approximately 5 to 50 substrates S. Note that the partition plate 314 of the partition plate support portion 310 is also called a separator.

[0031] The substrate support 300 is driven by a vertical drive mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotational direction around the center of the substrate S supported by the substrate support 300 .

[0032] The transfer chamber 217 is installed at the bottom of the reaction tube 210 via a manifold 216. In the transfer chamber 217, a substrate S is placed (loaded) onto a substrate support (hereinafter, may be simply referred to as a boat) 300 by a vacuum transfer robot via a substrate loading port, and the substrate S is removed from the substrate support 300 by the vacuum transfer robot.

[0033] A vertical drive mechanism 400 constituting a first drive unit that drives the substrate support 300 in the vertical and rotational directions can be stored inside the transfer chamber 217. In Fig. 1, the substrate support 300 is shown raised by the vertical drive mechanism 400 and stored inside the reaction tube 210.

[0034] The vertical drive mechanism 400 constituting the first drive unit has, as drive sources, a vertical drive motor 410, a rotation drive motor 430, and a boat lifting mechanism 420 equipped with a linear actuator as a substrate support lifting mechanism that drives the substrate support 300 in the vertical direction.

[0035] A vertical drive motor 410 serving as a partition plate support lifting mechanism rotates a ball screw 411, thereby moving a nut 412 threaded onto the ball screw 411 up and down along the ball screw 411. As a result, the partition plate support 310 and the substrate support 300, together with a base plate 402 to which the nut 412 is fixed, are driven vertically between the reaction tube 210 and the transfer chamber 217. The base plate 402 is also fixed to a ball guide 415 engaged with a guide shaft 414, allowing smooth vertical movement along the guide shaft 414. The upper and lower ends of the ball screw 411 and the guide shaft 414 are fixed to fixing plates 413 and 416, respectively.

[0036] The boat raising and lowering mechanism 420 equipped with the rotary drive motor 430 and the linear actuator constitutes a second drive unit, which is fixed to a base flange 401 serving as a lid supported by a side plate 403 on a base plate 402 .

[0037] The rotation drive motor 430 drives a rotation transmission belt 432 that engages with teeth 431 attached to the tip, and rotates a support 440 that engages with the rotation transmission belt 432. The support 440 supports the partition plate support part 310 at the base part 311, and is driven by the rotation drive motor 430 via the rotation transmission belt 432, thereby rotating the partition plate support part 310 and the substrate support 300.

[0038] A boat raising and lowering mechanism 420 equipped with a linear actuator drives a shaft 421 in the up and down direction. A plate 422 is attached to the tip of the shaft 421. The plate 422 is connected to a support part 441 fixed to the substrate support 300 via a bearing 423. Because the support part 441 is connected to the plate 422 via the bearing 423, when the partition plate support part 310 is rotationally driven by the rotation drive motor 430, the substrate support 300 can also rotate together with the partition plate support part 310.

[0039] On the other hand, the support part 441 is supported by the support 440 via a linear guide bearing 442. With this configuration, when the shaft 421 is driven in the vertical direction by the boat lifting mechanism 420 equipped with a linear actuator, the support part 441 fixed to the substrate support 300 can be driven in the vertical direction relative to the support 440 fixed to the partition plate support part 310.

[0040] A support 440 fixed to the partition plate support 310 and a support 441 fixed to the substrate support 300 are connected by a vacuum bellows 443 .

[0041] An O-ring 446 for vacuum sealing is installed on the upper surface of the base flange 401 serving as a lid. As shown in FIG. 1, the base flange 401 is driven by a vertical drive motor 410 to raise the upper surface of the base flange 401 to a position where it is pressed against the transfer chamber 217, thereby keeping the inside of the reaction tube 210 airtight.

[0042] Next, the processing vessel will be described in detail with reference to FIG.

[0043] The walls constituting the supply-side flow path 227 and the walls constituting the exhaust-side flow path 231 are each formed continuously with the wall constituting the reaction tube 210, and are used as processing vessels for accommodating and processing the substrate S. As described above, the walls constituting the supply-side flow path 227 and the walls constituting the exhaust-side flow path 231 are each formed continuously with the wall constituting the reaction tube 210 on the upstream and downstream sides of the gas flow. The walls constituting the reaction tube 210, the supply-side flow path 227, and the exhaust-side flow path 231 are each made of quartz.

[0044] The wall constituting the supply-side flow path 227 is used as a gas flow path for supplying gas into the reaction tube 210. The wall constituting the exhaust-side flow path 231 is used as a gas flow path for exhausting gas from the reaction tube 210.

[0045] The supply-side flow path 227 includes a first supply flow path 227a connected to the reaction tube 210 and a second supply flow path 227b provided upstream of the gas flow of the first supply flow path 227a and connected to the reaction tube 210 via the first supply flow path 227a. The first supply flow path 227a is continuously connected to the reaction tube 210 at connection portions C1 and C2. Therefore, the connection portions C1 and C2 are configured to connect the wall of the reaction tube 210 to the wall of the first supply flow path 227a. The connection portions C1 and C2 are located on the boundary between a flat surface and a curved surface and do not have a convex structure. Furthermore, the wall of the first supply flow path 227a is continuously connected to the wall of the second supply flow path 227b at connection portions D1 and D2. Therefore, the connection portions D1 and D2 are configured to connect the wall of the first supply flow path 227a to the wall of the second supply flow path 227b.

[0046] The exhaust-side flow path 231 includes a first exhaust flow path 231a as a first flow path connected to the reaction tube 210, and a second exhaust flow path 231b as a second flow path that is provided downstream of the gas flow of the first exhaust flow path 231a and connected to the reaction tube 210 via the first exhaust flow path 231a. The first exhaust flow path 231a is continuously connected to the reaction tube 210 at connection parts C3 and C4, respectively. Therefore, the connection parts C3 and C4 are configured to connect a wall that constitutes the reaction tube 210 to a wall that constitutes the first exhaust flow path 231a. Furthermore, the first exhaust flow path 231a is continuously connected to the second exhaust flow path 231b at connection parts D3 and D4, respectively. Therefore, the connection parts D3 and D4 are configured to connect a wall that constitutes the first exhaust flow path 231a to a wall that constitutes the second exhaust flow path 231b.

[0047] 2 , an extension line L1 of the inner wall constituting the reaction tube 210 at the connection part C3, which is a tangent line of the reaction tube 210 at the connection part C3, and an extension line L2 of the inner wall of the first exhaust flow path 231a constituting the gas flow path at the connection part C3, are configured to intersect with an axis L3 extending from the central axis O of the reaction tube 210 toward the flow path on the exhaust side. With this configuration, the connection parts C3 and C4 are located on the boundary between a flat surface and a curved surface, and do not have a convex structure.

[0048] Furthermore, at the intersection (connection C3) between the drawing line L1 of the inner wall constituting the reaction tube 210 at the connection C3 and the drawing line L2 of the inner wall of the exhaust-side flow path 231 constituting the gas flow path at the connection C3, the angle formed by the drawing line L1 and the drawing line L2 on the center side of the reaction tube 210 is an obtuse angle or a straight angle. With such a configuration, the connection parts C3 and C4 are arranged on the boundary between a flat surface and a curved surface, and do not have a convex structure.

[0049] With the above configuration, even if the processing gas collides with the connection part C3, the flow of the gas can be diverted and the generation of a vortex can be suppressed. The connection parts C1, C2, and C4 are configured in the same way and have the same effect.

[0050] The supply-side flow path 227 and the exhaust-side flow path 231 are symmetrically arranged with respect to the reaction tube 210. In FIG. 2, they are configured symmetrically with respect to the reaction tube 210. That is, the supply-side flow path 227 and the exhaust-side flow path 231 are arranged point-symmetrically with respect to the central axis O of the reaction tube 210. Furthermore, the walls constituting the supply-side flow path 227, the reaction tube 210, and the exhaust-side flow path 231 are arranged line-symmetrically with respect to the axis L3. This allows the gas flow on the supply side and the gas flow on the exhaust side to be the same, thereby suppressing the generation of vortex flows. Furthermore, since the gas flow can be made the same on both sides of the axis L3, the in-plane film thickness uniformity of the substrate can be improved.

[0051] When the substrate S is accommodated in the reaction tube 210, the shortest distance between the inner wall of the connection parts C1 and C2 and the end of the substrate S is shorter than any distance between the inner wall of the supply-side flow path 227 and the end of the substrate S. Furthermore, when the substrate S is accommodated in the reaction tube 210, the shortest distance between the inner wall of the connection parts C3 and C4 and the end of the substrate S is shorter than any distance between the inner wall of the exhaust-side flow path 231 and the end of the substrate S.

[0052] Furthermore, when the substrate S is accommodated in the reaction tube 210, the shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S is shorter than any distance between the inner walls of the supply-side flow path 227. Furthermore, when the substrate S is accommodated in the reaction tube 210, the shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S is shorter than any distance between the inner walls of the exhaust-side flow path 231.

[0053] The shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S is shorter than any distance between the inner wall of the supply-side flow path 227 and the end of the substrate S. The shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S is shorter than any distance between the inner wall of the exhaust-side flow path 231 and the end of the substrate S.

[0054] The inner walls of the second supply flow path 227b are arranged parallel to the axis L3 and symmetrically with respect to the axis L3. That is, the distance between the inner walls of the second supply flow path 227b is constant. The distance between the inner walls of the first supply flow path 227a is configured to continuously increase as the distance approaches the reaction tube 210. That is, the distance from the inner wall of the first supply flow path 227a to the axis L3 is longest at the connection parts C1 and C2 on the reaction tube 210 side and shortest at the connection parts D1 and D2 on the second supply flow path 227b side. Since the gas flow can be made the same on both sides of the axis L3, the in-plane film thickness uniformity of the substrate can be improved.

[0055] In other words, the width of the gas flow path at the connection portions D1 and D2 is configured to be narrower than the width of the gas flow path at the connection portions C1 and C2. That is, the connection portions C1 and C2 are configured to be located at a distance away from each other such that the gas concentration at the connection portions C1 and C2 is lower than the gas concentration at the connection portions D1 and D2.

[0056] The inner walls of the second exhaust flow path 231b are arranged parallel to the axis L3 and symmetrically with respect to the axis L3. That is, the distance between the inner walls of the second exhaust flow path 231b is constant. The distance between the inner walls of the first exhaust flow path 231a is configured to continuously narrow as the distance from the reaction tube 210 increases. With this configuration, the connecting portions C3 and C4 do not have a convex structure. That is, the distance from the inner wall of the first exhaust flow path 231a to the axis L3 is longest at the connecting portions C3 and C4 on the reaction tube 210 side and shortest at the connecting portions D3 and D4 on the second exhaust flow path 231b side. Since the gas flow can be made the same on both sides of the axis L3, the in-plane film thickness uniformity of the substrate can be improved.

[0057] In other words, the width of the gas flow path at the connection portions D3 and D4 is configured to be narrower than the width of the gas flow path at the connection portions C3 and C4. Furthermore, the connection portions D3 and D4 are located at a predetermined distance from the substrate S. This predetermined distance is the distance at which the gas concentration at the connection portions C3 and C4 is lower than the gas concentration at the connection portions D3 and D4. Therefore, in the region of the connection portions C3 and C4 close to the substrate S, the generation of vortexes is suppressed, and gas retention and an increase in partial pressure are suppressed, thereby preventing localized increases in the gas concentration. Furthermore, because the region of the connection portions D3 and D4 is located at a predetermined distance from the substrate S compared to the connection portions C3 and C4, even if vortexes are generated at the connection portions D3 and D4, their impact on the substrate S is minimal.

[0058] The gas concentration in the connection part specifically refers to the gas concentration in the space near the connection part, for example, the gas concentration in the space in contact with the connection part.

[0059] The current rectifying vane 226 does not have a convex structure and is continuously provided between the inner walls of the first supply flow path 227a and the second supply flow path 227b. The current rectifying vane 226 has a shape that follows the inner walls of the first supply flow path 227a and the second supply flow path 227b. Therefore, the current rectifying vane 226 is configured so that its width gradually increases from the second supply flow path 227b to the first supply flow path 227a. The end of the current rectifying vane 226 on the downstream side of the gas flow and on the reaction tube 210 side is formed in an arc shape so that the shortest distance from the end of the substrate S is equal to the shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S. In other words, the side of the current rectifying vane 226 facing the substrate S has a shape that follows the outer periphery of the substrate S. Furthermore, the end of the current rectifying vane 226 on the reaction tube 210 side is disposed closer to the center of the reaction tube 210 than the tips of the nozzles 223 to 225.

[0060] The current rectifying plate 232 does not have a convex structure and is continuously provided between the inner walls of the first exhaust flow path 231a and the second exhaust flow path 231b. The current rectifying plate 232 has a shape that follows the inner walls of the first exhaust flow path 231a and the second exhaust flow path 231b. Therefore, the current rectifying plate 232 is configured so that its width gradually narrows from the first exhaust flow path 231a to the second exhaust flow path 231b. The upstream end of the current rectifying plate 232 on the reaction tube 210 side of the gas flow is formed in an arc shape so that the shortest distance from the end of the substrate S is equal to the shortest distance between the inner wall of the reaction tube 210 and the end of the substrate S. In other words, the side of the current rectifying plate 232 facing the substrate S has a shape that follows the outer circumferential shape of the substrate S. This makes it possible to suppress the formation of a vortex caused by the current rectifying plate.

[0061] Next, the gas supply unit and its surroundings will be described in detail with reference to FIGS.

[0062] 3 , nozzles 223, 224, and 225 serving as gas supply units are provided in the supply-side flow path 227 between the straightening vanes 226 and between the straightening vanes 226 and the supply-side flow path 227. The nozzles 223, 224, and 225 are provided on the upstream side in the approximately horizontal direction with respect to the respective substrates S, in the circumferential direction of the substrates S. The nozzles 223, 224, and 225 are configured to communicate with the reaction tube 210, the supply-side flow path 227, and the exhaust-side flow path 231.

[0063] Nozzle 223 is arranged in a central region on a side of substrate S, and nozzles 224 and 225 are arranged on both sides of nozzle 223 in the horizontal direction in the central region on the side of substrate S. Nozzle 224 is arranged downstream of nozzle 223 in the rotation direction of substrate S. Nozzle 225 is arranged upstream of nozzle 223 in the rotation direction of substrate S. In other words, nozzle 223 is arranged between nozzle 224 and nozzle 225. In other words, nozzles 224 and 225 are provided on both sides of nozzle 223 in the horizontal direction.

[0064] The tips of the nozzles 223 to 225 are configured to be arranged in the first supply flow passage 227a on the downstream side of the gas flow at the connection parts D1 and D2 and on the upstream side of the gas flow at the connection parts C1 and C2.

[0065] 4, the nozzle 223 has a tip formed with a hole 223a that opens through a sub-supply passage directed toward the center of the substrate S, a hole 223b that opens through a sub-supply passage directed toward the edge region on the downstream side in the rotation direction of the substrate S and is disposed on the wall side of the reaction tube 210, and a hole 223c that opens through a sub-supply passage directed toward the edge region on the upstream side in the rotation direction of the substrate S and is disposed on the wall side of the reaction tube 210. That is, the nozzle 223 has a tip formed with holes 223a, 223b, and 223c that open through three sub-supply passages, respectively.

[0066] The hole 223a is configured to supply gas toward the center of the substrate S. The hole 223b is provided diagonally downstream of the hole 223a in the rotation direction of the substrate S and parallel to the first supply flow path 227a, and is configured to supply gas toward the downstream edge region of the rotating substrate S. In other words, the hole 223b is configured to supply gas in a direction parallel to the first supply flow path 227a, which is arranged downstream of the rotation direction of the substrate S.

[0067] Furthermore, hole 223c is provided obliquely upstream of hole 223a in the rotation direction of substrate S and parallel to the wall constituting first supply flow path 227a, and is configured to supply gas toward the upstream edge region of rotation of substrate S. In other words, it is configured to supply gas in a direction parallel to first supply flow path 227a arranged upstream of substrate S in the rotation direction.

[0068] In this way, holes 223a, 223b, and 223c are formed at the tip of nozzle 223 so as to supply gas in three directions. Specifically, the extension direction of holes 223b and 223c is configured to be approximately parallel to the inner wall of first supply flow path 227a, which is the wall that constitutes the gas flow path. This makes it possible to suppress the generation of vortex currents.

[0069] The diameter of the hole 223a is, for example, about 6 mm, which is larger than the diameters of the holes 223b and 223c arranged on both sides of the hole 223a. The holes 223b and 223c are formed in line symmetry with respect to the hole 223a toward the edge region of the substrate S.

[0070] A hole 224a is formed at the tip of the nozzle 224, opening toward the downstream edge region of the rotating substrate S. The hole 224a is provided at an angle facing outward, and is configured to supply gas toward the downstream edge region of the rotating substrate S. In other words, the extension direction of the hole 224a is configured to be approximately parallel to the inner wall of the first supply flow path 227a, which is the wall that configures the gas flow path.

[0071] A hole 225a is formed at the tip of the nozzle 225, opening toward an edge region on the upstream side of the rotation of the substrate S. The hole 225a is provided at an angle facing outward, and is configured to supply gas toward the edge region on the upstream side of the rotation of the substrate S. In other words, the extension direction of the hole 225a is configured to be approximately parallel to the inner wall of the first supply flow path 227a, which is the wall that configures the gas flow path.

[0072] The holes 224a and 225a are formed line-symmetrically with respect to the hole 223a toward the edge region of the substrate S. The holes 224a and 225a are disposed closer to the edge region than the holes 223b and 223c. The diameters of the holes 224a and 225a are, for example, about 2 mm.

[0073] A gas supply pipe 251 is connected to the nozzle 223. A gas supply pipe 261 is connected to the nozzle 224. A gas supply pipe 271 is connected to the nozzle 225.

[0074] The gas supply pipe 251 is provided with, in this order from the upstream direction, a raw material gas source 252, a mass flow controller (MFC) 253 which is a flow rate controller (flow rate control part), and a valve 254 which is an on-off valve.

[0075] A raw material gas, which is a process gas, is supplied from the raw material gas source 252. The raw material gas is a gas in which at least two silicon atoms (Si) are bonded, that is, a raw material gas containing Si-Si bonds, such as hexachlorodisilane (SiCl, abbreviated as HCDS) gas, which is a gas containing Si and chlorine (Cl).

[0076] A gas supply pipe 255 is connected to the gas supply pipe 251 on the downstream side of the valve 254. An inert gas source 272, an MFC 257, and an on-off valve 258 are provided in this order from the upstream direction in the gas supply pipe 255. An inert gas, for example, nitrogen (N2) gas is supplied from the inert gas source 272.

[0077] A first gas supply system 250 is mainly configured by a gas supply pipe 251 , an MFC 253 , a valve 254 , a gas supply pipe 255 , an MFC 257 , a valve 258 , and a nozzle 223 .

[0078] The inert gas supplied from the gas supply pipe 255 mainly acts as a carrier gas that transports the raw material gas when the raw material gas is supplied, and acts as a purge gas that purges the gas remaining in the reaction tube 210 when purging.

[0079] As shown in FIG. 3, the gas supply pipe 261 is provided with, in order from the upstream direction, a reactive gas source 262, an MFC 263 which is a flow rate controller (flow rate control part), and a valve 264 which is an on-off valve.

[0080] A reactive gas that reacts with the source gas is supplied from the reactive gas source 262. Here, the reactive gas is, for example, a gas containing any one of oxygen (O), nitrogen (N), and carbon (C). In this embodiment, the reactive gas is, for example, a nitrogen-containing gas, such as a nitrogen-based gas containing an N-H bond, such as ammonia (NH), diazene (NH) gas, hydrazine (NH) gas, or NH gas.

[0081] A gas supply pipe 265 is connected to the gas supply pipe 261 on the downstream side of the valve 264. The gas supply pipe 265 is provided with, in this order from the upstream direction, an inert gas source 272, an MFC 267, and a valve 268 which is an on-off valve.

[0082] A second gas supply system 260 is mainly configured by the gas supply pipe 261 , the MFC 263 , the valve 264 , the gas supply pipe 265 , the MFC 267 , the valve 268 , and the nozzle 224 .

[0083] The inert gas supplied from the gas supply pipe 265 mainly acts as a carrier gas that transports the raw material gas when the raw material gas is supplied, and acts as a purge gas that purges the gas remaining in the reaction tube 210 when purging.

[0084] As shown in FIG. 3, the gas supply pipe 271 is provided with, in order from the upstream direction, a reactive gas source 262, an MFC 273 which is a flow rate controller (flow rate control part), and a valve 274 which is an on-off valve.

[0085] A gas supply pipe 275 is connected to the gas supply pipe 271 on the downstream side of the valve 274. The gas supply pipe 275 is provided with, in order from the upstream direction, an inert gas source 272, an MFC 277, and a valve 278 which is an on-off valve.

[0086] A third gas supply system 280 is mainly configured by the gas supply pipe 271, the MFC 273, the valve 274, the gas supply pipe 275, the MFC 277, the valve 278, and the nozzle 225.

[0087] The inert gas supplied from the gas supply pipe 275 acts as a carrier gas that transports the raw material gas when the raw material gas is supplied, and acts as a purge gas that purges the gas remaining in the reaction tube 210 when purging.

[0088] The third gas supply system 280 supplies the same reactive gas or inert gas as the second gas supply system 260 to the substrate S. Therefore, the third gas supply system can also be called the second gas supply system.

[0089] Next, the exhaust system will be explained using FIG. An exhaust system 290 for exhausting the atmosphere in the reaction tube 210 has an exhaust pipe 291 communicating with the reaction tube 210 and is connected to the housing 241 via an exhaust pipe connector 242 .

[0090] 1 , a vacuum pump 294 serving as a vacuum exhaust device is connected to an exhaust pipe 291 via a valve 292 serving as an on-off valve and an APC (Auto Pressure Controller) valve 293 serving as a pressure regulator (pressure adjustment unit), so that the reaction tube 210 can be evacuated to a predetermined pressure (vacuum level). The exhaust pipe 291, the valve 292, and the APC valve 293 are collectively referred to as an exhaust system 290. The exhaust system 290 is also referred to as a processing chamber exhaust system. The exhaust system 290 may include the vacuum pump 294.

[0091] Next, a controller serving as a control section (control means) will be described with reference to Fig. 5. The substrate processing apparatus has a controller 600 that controls the operation of each section of the substrate processing apparatus .

[0092] 5 shows an outline of the controller 600. The controller 600 is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. Data transmission and reception within the substrate processing apparatus 10 is performed in accordance with instructions from a transmission / reception instruction unit 606, which is one of the functions of the CPU 601.

[0093] The controller 600 is provided with a network transceiver 683 that is connected to the host device 670 via a network. The network transceiver 683 is capable of receiving information, such as processing history and processing schedule, about the substrates S stored in the pod from the host device 670.

[0094] The storage device 603 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing apparatus 10, a process recipe describing the procedures and conditions for substrate processing, etc. are readably stored in the storage device 603.

[0095] The process recipe functions as a program, which is a combination of procedures in a substrate processing step (described later) that are executed by the controller 600 to obtain a predetermined result. Hereinafter, the process recipe, control program, etc. are collectively referred to as simply a program. In this specification, the term "program" may refer to only a process recipe, only a control program, or both. The RAM 602 is configured as a memory area (work area) in which programs, data, etc. read by the CPU 601 are temporarily stored.

[0096] The I / O port 604 is connected to each component of the substrate processing apparatus 10 .

[0097] The CPU 601 is configured to read and execute a control program from the storage device 603, and also to read a process recipe from the storage device 603 in response to an input of an operation command from the input / output device 681. The CPU 601 is configured to be able to control the substrate processing apparatus 10 in accordance with the contents of the read process recipe.

[0098] The CPU 601 has a transmission / reception instruction unit 606. The controller 600 according to this embodiment can be configured by installing the program into a computer using an external storage device 682 (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) storing the program. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 682. For example, the program may be supplied via a communication means such as the Internet or a dedicated line, without going through the external storage device 682. The storage device 603 and the external storage device 682 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term "recording medium" may refer to the storage device 603 alone, the external storage device 682 alone, or both.

[0099] Next, as one step of the semiconductor manufacturing process (substrate processing process), a step of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above-described configuration will be described. In the following description, the operation of each part of the substrate processing apparatus 10 is controlled by a controller 600.

[0100] Here, a film formation process will be described with reference to FIGS. 6 and 7, in which a source gas and a reactive gas are alternately supplied to form a film on a substrate S having grooves as recesses on its surface.

[0101] (S10) The transfer chamber pressure adjusting step S10 will be described. Here, the pressure inside the transfer chamber 217 is adjusted to the same level as that of a vacuum transfer chamber (not shown) adjacent to the transfer chamber 217.

[0102] (S11) Next, the substrate loading step S11 will be described. When the transfer chamber 217 reaches a vacuum level, the transfer of the substrate S begins. When the substrate S arrives at the vacuum transfer chamber, the gate valve is opened and the vacuum transfer robot loads the substrate S into the transfer chamber 217.

[0103] At this time, the substrate support 300 is placed on standby in the transfer chamber 217, and the substrates S are transferred to the substrate support 300. When a predetermined number of substrates S have been transferred to the substrate support 300, the vacuum transfer robot is retracted, and the vertical drive mechanism 400 raises the substrate support 300 to move the substrates S into the processing chamber within the reaction tube 210.

[0104] When the substrate S is moved to the reaction tube 210 , it is positioned so that the surface of the substrate S is flush with the height of the current plates 226 and 232 , and is then accommodated in the reaction tube 210 .

[0105] (S12) Next, the heating step S12 will be described. Once the substrate S is loaded into the processing chamber within the reaction tube 210, the pressure within the reaction tube 210 is controlled to a predetermined value, and the surface temperature of the substrate S is controlled to a predetermined value. The temperature of the heater 211 is controlled so that the temperature of the substrate S is, for example, 100°C or higher and 1500°C or lower, preferably 200°C or higher and 1000°C or lower, and more preferably 400°C or higher and 800°C or lower. The pressure within the reaction tube 210 may be set to, for example, 5 Pa to 100 kPa. That is, the substrate S is processed while stacked on the substrate support 300.

[0106] (S13) Next, the film treatment step S13 will be described. In the film treatment step S13, the following steps are performed on the substrate S having grooves as recesses on its surface in accordance with a process recipe while the substrate S is accommodated in a treatment chamber.

[0107] <Source Gas Supply, Step S100> First, a source gas is supplied into the reaction tube 210. The valve 254 is opened to allow the source gas to flow into the gas supply pipe 251. The flow rate of the source gas is adjusted by the MFC 253, and the source gas is supplied into the reaction tube 210 via the distributor 125, the nozzle 223, and the holes 223a, 223b, and 223c. At the same time, the valves 268 and 278 are opened to allow an inert gas, such as N2 gas, to flow into the gas supply pipes 261 and 271. The flow rate of the inert gas is adjusted by the MFCs 267 and 277, and the source gas is supplied into the reaction tube 210 via the distributor 125, the nozzles 224 and 225, and the holes 224a and 225a. The inert gas is then exhausted through the space above the substrate S, the exhaust-side flow path 231, the gas exhaust structure 213, and the exhaust pipe 281. That is, in this step, the source gas and the inert gas are supplied into the reaction tube 210 as process gases.

[0108] In a configuration in which gas is supplied from the side of the substrate S and exhausted from the side, as in the substrate processing apparatus 10 described above, it is possible to supply the raw material gas in an undecomposed state, compared to a configuration in which gas is supplied from below the substrate S and exhausted from below.

[0109] <Purge, step S101> After a predetermined time has elapsed since the start of the supply of the source gas, the valve 254 is closed to stop the supply of the source gas. At this time, the valves 258, 268, and 278 are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, and 275, and the valve 292 and the APC valve 293 of the exhaust pipe 291 are left open, and the reaction tube 210 is evacuated to a vacuum by the vacuum pump 294. This makes it possible to suppress the reaction between the source gas and the reactive gas in the vapor phase present in the reaction tube 210.

[0110] <Reaction gas supply, step S102> After a predetermined time has elapsed since the start of purging, the valves 268 and 278 are closed, and the valves 264 and 274 are opened to allow the reactive gas to flow into the gas supply pipes 261 and 271. The reactive gas has its flow rate adjusted by the MFCs 263 and 273, and is supplied into the reaction tube 210 via the distributor 125, the nozzle 224, the hole 224a, the nozzle 225, and the hole 225a. The reactive gas is then exhausted through the space above the substrate S, the downstream rectifier 215, the gas exhaust structure 213, and the exhaust pipe 291. At this time, in order to prevent the reactive gas from entering the gas supply pipe 251, the valve 258 is opened, and an inert gas is allowed to flow from the nozzle 223. That is, in this step, the reactive gas and the inert gas are supplied into the reaction tube 210 as processing gases.

[0111] At this time, a reactive gas is supplied to the substrate S from the side thereof via the gas supply structure 212. Here, the reactive gas is a gas different from the source gas and reacts with the source gas, such as an N-containing gas such as NH3 gas. That is, the reactive gas is supplied to the surface of the substrate S from the side thereof. Then, the reactive gas is supplied into the grooves and reacts with precursors adhering to the walls of the grooves, and a desired film is formed on the substrate S, including the interior of the grooves. Specifically, on the surface of the substrate S, the NH3 gas reacts with the HCDS gas, and the NH3 gas supplied into the grooves reacts with SiCl2 adhering to the walls of the grooves, thereby forming a silicon nitride (SiN) film with reduced voids and improved step coverage.

[0112] <Purge, step S103> After a predetermined time has elapsed since the start of the supply of the reactive gas, the valves 264 and 274 are closed to stop the supply of the reactive gas. At this time, the valves 258, 268, and 278 are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, and 275, and the valve 292 and the APC valve 293 of the exhaust pipe 291 are left open, and the reaction tube 210 is evacuated to a vacuum by the vacuum pump 294. This makes it possible to suppress the reaction between the source gas in the vapor phase and the reactive gas present in the reaction tube 210.

[0113] <Performed a predetermined number of times, step S104> By performing the cycle of steps S100 to S103 in sequence and non-simultaneously a predetermined number of times (n times), that is, one or more times, a film of a predetermined thickness is formed on the substrate S having the grooves. Here, for example, a SiN film is formed.

[0114] (S14) Next, the substrate unloading step S14 will be described. In S14, the processed substrate S is unloaded from the transfer chamber 217 in the reverse order to the substrate loading step S11 described above.

[0115] (S15) Next, the judgment S15 will be explained. Here, it is judged whether or not the substrate has been processed the predetermined number of times. If it is judged that the substrate has not been processed the predetermined number of times, the process returns to the substrate carry-in step S11, and the next substrate S is processed. If it is judged that the substrate has been processed the predetermined number of times, the process ends.

[0116] 8(A) to 8(C) are diagrams illustrating an example of a gas used as a source gas, in which at least two silicon atoms (Si) are bonded.

[0117] As shown in Figure 8(A), HCDS gas contains Si and a chloro group (chloride) in its chemical structure (per molecule). Also, as shown in Figure 8(B), 1,1,2,2-tetrachloro-1,2-dimethyldisilane ((CH3)2Si2Cl4, abbreviated as TCDMDS) has a Si-Si bond and also contains a chloro group and an alkylene group. As shown in Figure 8(C), 1,2-dichloro-1,1,2,2-tetramethyldisilane ((CH3)4Si2Cl2, abbreviated as DCTMDS) has a Si-Si bond and also contains a chloro group and an alkylene group.

[0118] Here, the raw material gas is a gas that has the property of having, under predetermined conditions, an undecomposed time during which a predetermined decomposition rate is maintained, and a decomposition time during which a decomposition rate higher than the predetermined decomposition rate is maintained. Note that "undecomposed" includes not only a state in which the gas is not decomposed at all, but also a state in which the gas is decomposed to some extent, and refers to a state in which the undecomposed gas is dominant. Because of this state, it is also called "low decomposition" instead of "undecomposed." Therefore, the undecomposed time may also be called "low decomposition time."

[0119] This Si-Si bond has enough energy to be broken down by colliding with the wall constituting the recess of the substrate S, which will be described later, inside the reaction tube 210. Here, breaking down means that the Si-Si bond is broken. That is, the Si-Si bond is broken down by colliding with the wall.

[0120] Figures 9(A) to 9(C) show three graphs for each pressure measured for HCDS gas, an example of a source gas. In each graph, the vertical axis represents the mole fraction of HCDS, and the horizontal axis represents the distance traveled by HCDS. Figure 9(A) shows measurements at 10,000 Pa, Figure 9(B) at 1,000 Pa, and Figure 9(C) at 100 Pa. Note that the measurement temperature is the same for each graph. In each graph, the mole fraction of HCDS (Si2Cl6) decreases and the mole fraction of SiCl2 increases, indicating that HCDS is decomposing.

[0121] Comparing these three graphs, we can see that the mole fraction of SiCl2 increases over the shortest distance as the pressure increases, which means that the decomposition of HCDS is promoted as the pressure increases.

[0122] FIG. 10(A) is a cross-sectional view showing a processing vessel according to the present disclosure, and FIG. 10(B) is a cross-sectional view showing a processing vessel according to a comparative example.

[0123] As shown in FIG. 10B, in the processing vessel according to the comparative example, the connection between the reaction tube 710 and the supply-side flow path 727 and the connection between the reaction tube 710 and the exhaust-side flow path 731 have a convex structure. Furthermore, holes are formed at the tips of the nozzles 723, 724, and 725 so as to supply gas toward the center of the substrate S. In the processing vessel according to the comparative example, when the processing gas is exhausted from the reaction tube 210, the opening width (distance between the connections) on the exhaust side is narrow, and the gas may collide with the connection near the opening, generating a vortex near the connection. The generation of a vortex in the reaction vessel 210 may cause the processing gas to stagnate or the partial pressure of the processing gas to increase. When a gas containing Si-Si bonds, such as HCDS gas, is used as the processing gas, the decomposition degree increases with an increase in temperature and partial pressure. This accelerates the decomposition of the processing gas in the region where the temperature and partial pressure are elevated, resulting in an increased concentration of the processing gas in that region. Furthermore, collisions with the convex structures break Si-Si bonds, accelerating decomposition of the process gas in those areas, increasing the process gas concentration in those areas. This results in a difference in the concentration of the process gas supplied to the surface of the substrate S between the edge of the substrate S located near the convex structures and the center of the substrate S. This may result in a deterioration in the in-plane film thickness uniformity of the film formed on the substrate. Furthermore, when the processing chamber is evacuated, stress may concentrate on the convex structures, potentially causing damage.

[0124] In contrast, as shown in FIG. 10(A), the connection portions (C1, C2) between the reaction tube 210 and the supply-side flow path 227 and the connection portions (C3, C4) between the reaction tube 210 and the exhaust-side flow path 231 do not have a convex structure. Furthermore, when the process gas is exhausted from the reaction tube 210, the opening width on the exhaust side (the distance between the connection portions C3, C4) is wider than the opening width (the distance between the connection portions) in the processing vessel shown in FIG. 10(B), and the distance from the center of the substrate S at the connection portions D3, D4 is longer than the distance from the center of the substrate S at the connection portions of the processing vessel shown in FIG. 10(B). Therefore, the regions at the connection portions D3, D4 are located farther away from the substrate S than the connection portions of the processing vessel shown in FIG. 10(B). Therefore, even if a vortex occurs at the connection portions D3, D4, the influence on the substrate S is small. That is, collision of the process gas with the wall is suppressed, and the generation of a vortex is suppressed. Therefore, stagnation of the process gas is suppressed, and a local increase in the process gas partial pressure is suppressed. Therefore, even when a gas containing Si-Si bonds is used as the process gas, uniform processing is possible, and the in-plane film thickness uniformity of the film formed on the substrate can be improved. Furthermore, since the connection parts (C3, C4) with the reaction tube 210 do not have a convex structure, even when the inside of the process container is evacuated, the gas flow can be diverted to suppress the generation of vortexes, and the vacuum resistance of the container can be maintained.

[0125] Although the gas flow formation is described as horizontal in the above, it is sufficient that the main gas flow is formed in the horizontal direction overall, and the gas flow may be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0126] Furthermore, in the above, expressions such as "same," "same degree," "equivalent," and "equal" are used, but it goes without saying that these include things that are essentially the same.

[0127] (4) Variations Next, modified examples of the processing vessel in the above-described embodiment will be described in detail. In the following modified examples, only the differences from the above-described embodiment will be described in detail.

[0128] (Variation 1) The above-described modified example of the processing vessel will be described in comparison with the processing vessel of the present disclosure.

[0129] FIG. 11(A) is a partial cross-sectional view showing the periphery of connections C3 and C4 of a processing container according to the present disclosure, and FIG. 11(B) is a partial cross-sectional view showing the periphery of connections C3 and C4 of a processing container according to a modified example.

[0130] 11(A), in the above-described embodiment, the first exhaust flow path 231a is connected to the reaction tube 210 at connection points C3 and C4, each of which is linearly inclined. Moreover, the first exhaust flow path 231a is connected to the second exhaust flow path 231b at connection points D3 and D4, each of which is linearly inclined. The straightening plate 232 is provided to correspond to the shape of the gap between the inner walls of the first exhaust flow path 231a and the second exhaust flow path 231b.

[0131] 11(B), in the modified example, the first exhaust flow path 231a is continuously connected to the reaction tube 210 in a curved shape at connection parts C3 and C4. The first exhaust flow path 231a is continuously connected to the second exhaust flow path 231b in a curved shape at connection parts D3 and D4. The straightening plate 232 is provided to correspond to the shape of the space between the inner walls constituting the first exhaust flow path 231a and the second exhaust flow path 231b.

[0132] This allows the gas flow to be diverted even in the processing vessel according to the modified example, suppressing the generation of vortexes, suppressing gas stagnation, and suppressing an increase in gas partial pressure. Therefore, the in-plane film thickness uniformity of the film formed on the substrate can be improved. Furthermore, by providing the flow rectifier plate 232, the pressure loss of the gas exhausted from each substrate S can be made uniform. Therefore, the gas flow passing through each substrate S is formed horizontally toward the gas exhaust structure 213 while suppressing vertical flow. Therefore, the inter-plane film thickness uniformity of the substrate S can be improved. The first supply flow path and the second supply flow path connected to the upstream side of the reaction tube 210 may also be configured to be continuously connected in a curved shape, similar to the shapes of the first exhaust flow path and the second exhaust flow path in the modified example.

[0133] (Variation 2) A modification of the above-mentioned processing vessel will be described with reference to FIG.

[0134] The processing vessel 700 according to this modification is mainly composed of an inner tube 700a serving as a first vessel and an outer tube 700b serving as a second vessel, i.e., the processing vessel 700 has a double structure.

[0135] The outer pipe 700b has a cylindrical shape, and a supply-side flow path 702 and an exhaust-side flow path 704 are continuously connected to the upstream and downstream sides of the outer pipe 700b in the gas flow direction, respectively.

[0136] A supply-side flow path 706 and an exhaust-side flow path 708 are connected in series to the upstream and downstream sides of the inner pipe 700a in the gas flow direction, respectively.

[0137] The outer pipe 700b is provided around the outer periphery of the inner pipe 700a, and the inner pipe 700a and the outer pipe 700b are arranged concentrically. The inner pipe 700a, the supply-side flow path 706, the exhaust-side flow path 708, the outer pipe 700b, the supply-side flow path 702, and the exhaust-side flow path 704 are each made of a heat-resistant material such as quartz.

[0138] The supply-side flow path 706 is used as a gas flow path for supplying gas into the inner pipe 700a, and the exhaust-side flow path 708 is used as a gas flow path for exhausting gas from the inner pipe 700a.

[0139] The supply-side flow path 706 is continuously connected to the inner pipe 700a at connection parts C1 and C2. The supply-side flow path 706 has a curved shape, and is configured so that the inner wall constituting the supply-side flow path 706 continuously becomes wider as it approaches the inner pipe 700a.

[0140] The exhaust-side flow path 708 is continuously connected to the inner pipe 700a at connection parts C3 and C4. The exhaust-side flow path 708 has a curved shape, and the inner wall constituting the exhaust-side flow path 708 is configured to continuously narrow as it moves away from the inner pipe 700a.

[0141] The upstream opening of supply-side flow path 706 in the gas flow direction is configured to be located upstream of connections E1 and E2 between supply-side flow path 702 and outer pipe 700b. Supply-side flow path 706 is configured to communicate with supply-side flow path 702 when nozzles 223-225 are not installed.

[0142] Nozzles 223 to 225 are arranged in supply-side flow path 702 of outer pipe 700b, and tips of nozzles 223 to 225 are arranged at openings on the upstream side of the gas flow of supply-side flow path 706 of inner pipe 700a.

[0143] The downstream opening of the exhaust-side flow path 708 in the gas flow direction is configured to be located downstream of the connection parts E3 and E4 of the exhaust-side flow path 704 with the outer pipe 700b in the gas flow direction.

[0144] Therefore, the exhaust-side flow path 708 of the inner pipe 700a is configured to communicate with the inner walls constituting the exhaust-side flow path 704 of the outer pipe 700b. Therefore, the process gas supplied into the inner pipe 700a is discharged via the exhaust-side flow paths 708, 704. This suppresses the generation of vortexes, suppresses gas stagnation, and suppresses an increase in gas partial pressure. Therefore, it is possible to improve the in-plane film thickness uniformity of the film formed on the substrate.

[0145] (Other aspects) Although the present embodiment has been specifically described above, it is not limited thereto and various modifications are possible without departing from the spirit of the present invention.

[0146] In the above embodiment, the nozzles 224 and 225 that supply the inert gas to the edge region of the substrate S are arranged on both sides of the nozzle 223 that supplies the raw material gas, but the present disclosure is not limited to this, and a nozzle that supplies the raw material gas to the edge region of the substrate S may be further arranged outside the nozzles 224 and 225. Also, three or more nozzles may be arranged approximately horizontally in the supply side flow path 227.

[0147] In addition, in the above embodiment, an example was given of a case where a film is formed using HCDS gas as a raw material gas and NH3 gas as a reactive gas in the film processing process performed by the substrate processing apparatus, but the present embodiment is not limited to this.

[0148] Furthermore, for example, in each of the above-described embodiments, a film formation process is exemplified as a process performed by the substrate processing apparatus, but this aspect is not limited thereto. That is, this aspect can be applied to film formation processes other than the thin film formation processes exemplified in each embodiment, in addition to the film formation processes exemplified in each embodiment. Furthermore, in this embodiment, an apparatus for processing a plurality of stacked substrates has been described, but this is not limited thereto, and the present invention can also be applied to a single-wafer processing apparatus for processing substrates one by one. Furthermore, part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. Furthermore, part of the configuration of each embodiment can be added, deleted, or replaced with other configurations. [Explanation of symbols]

[0149] S board 10. Substrate processing equipment 210 Reaction tube 600...Controller

Claims

1. a container capable of accommodating a substrate; a gas flow path formed continuously with the container; a first connection portion that connects a wall that constitutes the container and a wall that constitutes the gas flow path; Equipped with An extension line of the wall constituting the container at the first connection part and an extension line of the wall constituting the gas flow path at the first connection part are both configured to intersect with an axis extending from the center of the container toward the gas flow path. Substrate processing equipment.

2. With the substrate housed in the container, 2. The substrate processing apparatus according to claim 1, wherein the distance between the wall of the container and the substrate is shorter than the distance between the walls of the gas flow path.

3. 2. The substrate processing apparatus according to claim 1, wherein the gas flow path is connected to a gas supply unit capable of supplying a gas containing Si--Si bonds.

4. 2. The substrate processing apparatus of claim 1, wherein the angle on the center side of the container at the intersection between the extension line of the wall constituting the container at the first connection portion and the extension line of the wall constituting the gas flow path at the first connection portion is an obtuse angle or a straight angle.

5. The substrate processing apparatus according to claim 1 , wherein the first connection portion has no protruding structure.

6. 2. The substrate processing apparatus of claim 1, wherein the first connection portion is configured such that the angle on the center side of the container at the intersection between the extension line of the wall constituting the container and the extension line of the wall constituting the gas flow path is an obtuse angle or a straight angle, or has no convex structure.

7. 2. The substrate processing apparatus according to claim 1, wherein the walls constituting the gas flow passage are provided symmetrically with respect to the axis.

8. 2. The substrate processing apparatus according to claim 1, wherein the distance between the walls defining the gas flow path is configured to continuously narrow as the distance from the container increases.

9. the gas flow path includes a supply flow path that supplies gas into the container and an exhaust flow path that exhausts the gas inside the container, 2. The substrate processing apparatus according to claim 1, wherein the supply flow path and the exhaust flow path are provided symmetrically with respect to the container.

10. the gas flow path includes a first supply flow path connected to the container at a supply-side first connection portion serving as the first connection portion, and a second supply flow path connected to the first supply flow path at a second connection portion and connected to the container via the first supply flow path, and includes a supply flow path that supplies gas into the container, the second connection portion is disposed at a position spaced a predetermined distance from the substrate, 2. The substrate processing apparatus according to claim 1, wherein the predetermined distance is a distance at which the gas concentration at the supply-side first connector is lower than the gas concentration at the second connector.

11. the gas flow path includes a first exhaust flow path connected to the container at an exhaust-side first connection part as the first connection part, and a second exhaust flow path connected to the first exhaust flow path at a third connection part and connected to the container via the first exhaust flow path, and has an exhaust flow path that exhausts gas inside the container, 2. The substrate processing apparatus according to claim 1, wherein the gas concentration at the first exhaust-side connecting portion is lower than the gas concentration at the third connecting portion.

12. the gas flow path includes a first exhaust flow path connected to the container at an exhaust-side first connection part as the first connection part, and a second exhaust flow path connected to the first exhaust flow path at a third connection part and connected to the container via the first exhaust flow path, and has an exhaust flow path that exhausts gas inside the container, 2 . The substrate processing apparatus according to claim 1 , wherein a width of the gas flow path in the third connecting portion is narrower than a width of the gas flow path in the exhaust-side first connecting portion.

13. the gas flow path has a supply flow path that supplies gas into the container, the supply flow path is provided with a gas supply unit that supplies a gas into the container, The substrate processing apparatus according to claim 1 , wherein a tip of the gas supply unit is disposed upstream of the first connection unit in the gas flow direction.

14. A gas supply device comprising one or more supply holes and a sub-supply passage communicating with the one or more supply holes, the gas supply section being provided in the gas flow path; 2 . The substrate processing apparatus according to claim 1 , wherein the gas supply direction of at least one of the one or more supply holes arranged on the wall side of the container is configured to be parallel to a wall that forms the gas flow path.

15. the gas flow path includes a first exhaust flow path connected to the container at an exhaust-side first connection part as the first connection part, and a second exhaust flow path connected to the first exhaust flow path at a third connection part and connected to the container via the first exhaust flow path, and has an exhaust flow path that exhausts gas inside the container, The substrate processing apparatus according to claim 1 , wherein a flow straightening section is provided in the exhaust flow path so that the width of the flow path gradually narrows as the flow path becomes farther from the container.

16. the container is a first container; Further comprising a second container disposed around the outer periphery of the first container, The substrate processing apparatus according to claim 1 , wherein the gas flow path is configured to communicate with a gas flow path provided in the second container.

17. a container capable of accommodating a substrate; a gas flow path formed continuously with the container; a first connection portion that connects a wall that constitutes the container and a wall that constitutes the gas flow path; Equipped with An extension line of the wall constituting the container at the first connection part and an extension line of the wall constituting the gas flow path at the first connection part are both configured to intersect with an axis extending from the center of the container toward the gas flow path. Processing container.

18. A method for manufacturing a processing chamber, comprising: supplying a gas to a substrate accommodated in a processing chamber; The processing vessel comprises: The container; a gas flow path formed continuously with the container; a first connection portion that connects a wall that constitutes the container and a wall that constitutes the gas flow path; Equipped with an extension line of the wall constituting the container at the first connection part and an extension line of the wall constituting the gas flow path at the first connection part are both configured to intersect with an axis extending from the center of the container toward the gas flow path. Substrate processing method.

19. A method for manufacturing a processing chamber, comprising: supplying a gas to a substrate accommodated in a processing chamber; The processing vessel comprises: The container; a gas flow path formed continuously with the container; a first connection portion that connects a wall that constitutes the container and a wall that constitutes the gas flow path; Equipped with an extension line of the wall constituting the container at the first connection part and an extension line of the wall constituting the gas flow path at the first connection part are both configured to intersect with an axis extending from the center of the container toward the gas flow path. A method for manufacturing a semiconductor device.

20. A procedure for supplying gas to a substrate accommodated in a container of a substrate processing apparatus comprising: a container capable of accommodating a substrate; a gas flow path formed continuous with the container; and a first connection part connecting a wall forming the container with a wall forming the gas flow path, wherein an extension line of the wall forming the container at the first connection part and an extension line of the wall forming the gas flow path at the first connection part are both configured to intersect an axis extending from the center of the container toward the gas flow path; A program for causing a computer to execute the above in the substrate processing apparatus.

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