Method for forming a film containing silicon boron with low leakage current

Abstract

To provide methods for forming films containing a silicon boron nitride layer.SOLUTION: The methods include positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate, and introducing a first flow of a first process gas and a second flow of a second process gas to the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to deposition processes, and more particularly to methods for forming films comprising silicon boron nitride (SiBN). [Background technology]

[0002] In semiconductor manufacturing, various devices can be formed. These devices include dynamic random access memory (DRAM) devices that have silicon- and nitrogen-containing stopper and supporter layers. Many DRAM devices require the silicon- and nitrogen-containing layers to be filled with boron. However, silicon nitride boron-containing layers generally have unfavorable thermal budgets and high leakage currents. The high thermal budget increases boron diffusion during additional DRAM device formation processes, such as wet etching, causing deformation, and the high leakage current can result in electrical short circuits between capacitors in the DRAM device.

[0003] Therefore, there is a need for improved silicon boron nitride layers and methods for forming silicon boron nitride layers having relatively high boron concentrations and relatively low leakage currents. Summary of the Invention

[0004] Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods of forming silicon boron nitride layers having a relatively high boron concentration and a relatively low leakage current. In some examples, the silicon boron nitride layer is a support layer and / or a stopper layer in a capacitor or other electronic device.

[0005] In one or more embodiments, a method of forming a silicon boron nitride layer is provided, the method including positioning a substrate on a pedestal in a processing region within a processing chamber, heating the pedestal holding the substrate to a deposition temperature of about 225° C. to about 575° C., and introducing a first flow of a first process gas and a second flow of a second process gas into the processing region, the first flow of the first process gas including silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N2) having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm. The second flow of the second process gas comprises about 2 mole percent (mol%) to about 15 mole% diborane, about 85 mole% to about 98 mole% hydrogen, and a flow rate of about 1 sccm to about 5,000 sccm. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas into the processing region, and exposing a substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0006] In another embodiment, a method for forming a silicon boron nitride layer is provided, the method including positioning a substrate on a pedestal in a processing region within a processing chamber and introducing a first flow of a first process gas and a second flow of a second process gas into the processing region. The first flow of the first process gas includes a silicon-containing precursor, a nitrogen-containing precursor, hydrogen, and at least two gases selected from the group consisting of argon, helium, nitrogen, and any combination thereof. The second flow of the second process gas includes about 2 mol% to about 15 mol% diborane, about 85 mol% to about 98 mol% hydrogen, and a flow rate of about 1 sccm to about 5,000 sccm. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas into the processing region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate. The silicon boron nitride layer contains about 10 atomic percent (at%) to about 50 at% boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a densitometric value of 1×10 at 1.5 MV / cm. -9 A / cm 2 has a leakage current of less than

[0007] In some embodiments, a method for forming a silicon boron nitride layer is provided, the method including: positioning a substrate on a pedestal in a processing region within a processing chamber; heating the pedestal holding the substrate to a deposition temperature of about 225° C. to about 575° C.; maintaining the processing region at a pressure of about 2 Torr to about 8 Torr; and introducing a first flow of a first process gas into the processing region, the first flow of the first process gas including silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen having a flow rate of about 50 sccm to about 20,000 sccm. The method further includes stopping the first flow of the first process gas, forming a plasma simultaneously with a second flow of a second process gas into the processing region, and forming a silicon boron nitride layer on the substrate, the second flow of the second process gas having a flow rate of about 1 sccm to about 5,000 sccm and comprising about 2 mol % to about 15 mol % diborane and about 85 mol % to about 98 mol % hydrogen.

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered limiting of the scope thereof, as other equally effective embodiments may be permitted. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments described and discussed herein; [Figure 2] 1 is a schematic cross-sectional view of another processing chamber according to one or more embodiments described and discussed herein. [Figure 3]1 is a flow diagram of a method for forming a silicon boron nitride layer according to one or more embodiments described and discussed herein; [Figure 4] FIG. 1 illustrates a capacitor device including a silicon boron nitride layer that may be deposited or otherwise produced by a method according to one or more embodiments described and discussed herein. DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011] Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods of forming silicon boron nitride layers. These silicon boron nitride materials and layers have a relatively high boron concentration and low leakage current, as well as other properties that make them suitable for use in electronic devices such as capacitors. For example, the silicon boron nitride layers described and discussed herein can be used as support and / or stop layers in capacitors or other electronic devices. The silicon boron nitride layers have a boron concentration of about 10 atomic percent (at%) to about 50 at%, e.g., about 20 at% to about 40 at%, and a 1×10 at 1.5 MV / cm -9 A / cm 2 may have a leakage current of less than

[0012] In one or more embodiments, a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a processing region within a processing chamber, heating the pedestal holding the substrate to a deposition temperature, and introducing a first flow of a first process gas and a second flow of a second process gas into the processing region. In some embodiments, a plasma is ignited or otherwise formed simultaneously with the first flow of the first process gas and the second flow of the second process gas into the processing region. The plasma can be generated remotely from the processing chamber or in situ within the processing chamber. The substrate is exposed to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate during a plasma-enhanced chemical vapor deposition (PE-CVD) process.

[0013] The pedestal holding the substrate disposed thereon is heated to a deposition temperature of about 225°C, about 250°C, about 300°C, about 350°C, about 400°C, or about 450°C to about 475°C, about 500°C, about 525°C, about 550°C, about 560°C, about 570°C, about 575°C, about 580°C, or about 600°C during the PE-CVD process. For example, the substrate may be heated to a temperature of from about 225°C to about 600°C, from about 225°C to about 575°C, from about 225°C to about 560°C, from about 225°C to about 550°C, from about 225°C to about 500°C, from about 225°C to about 450°C, from about 225°C to about 400°C, from about 225°C to about 350°C, from about 225°C to about 300°C, from about 350°C to about 600°C, from about 350°C to about 575°C, from about 350°C to about 5 The deposition temperature is heated to a deposition temperature of 60°C, about 350°C to about 550°C, about 350°C to about 500°C, about 350°C to about 450°C, about 350°C to about 400°C, about 350°C to about 375°C, about 450°C to about 600°C, about 450°C to about 575°C, about 450°C to about 560°C, about 450°C to about 550°C, about 450°C to about 500°C, or about 450°C to about 475°C.

[0014] The processing region is maintained at a pressure of less than 100 Torr, less than 50 Torr, less than 20 Torr, or less than 10 Torr during the PE-CVD process. The processing region is maintained at a pressure of about 0.5 Torr, about 1 Torr, about 2 Torr, about 3 Torr, or about 4 Torr to about 5 Torr, about 6 Torr, about 7 Torr, about 8 Torr, or about 9 Torr. For example, the processing region is maintained at a pressure of about 0.5 Torr to less than 10 Torr, about 2 Torr to less than 10 Torr, about 2 Torr to about 8 Torr, about 2 Torr to about 6 Torr, about 2 Torr to about 5 Torr, about 2 Torr to about 4 Torr, about 3 Torr to less than 10 Torr, about 3 Torr to about 8 Torr, about 3 Torr to about 6 Torr, about 3 Torr to about 5 Torr, about 3 Torr to about 4 Torr, about 4 Torr to less than 10 Torr, about 4 Torr to about 8 Torr, about 4 Torr to about 6 Torr, or about 4 Torr to about 5 Torr.

[0015] The pedestal is positioned at a process distance within the processing chamber during the PE-CVD process, which is the distance between the pedestal and the showerhead, the process distance being about 100 mils (about 2.5 millimeters (mm)), about 200 mils (about 5 mm), about 300 mils (about 7.5 mm), or about 400 mils (about 10 mm) to about 500 mils (about 12.5 mm), about 600 mils (about 15 mm), about 800 mils (about 20 mm), about 1,000 mils (about 25.4 mm), about 2,000 mils (about 50.8 mm), or about 5,000 mils (about 127 mm). For example, the process distance is from about 100 mils to about 5,000 mils, from about 100 mils to about 2,000 mils, from about 100 mils to about 1,000 mils, from about 100 mils to about 800 mils, from about 100 mils to about 600 mils, from about 100 mils to about 500 mils, from about 100 mils to about 400 mils, from about 100 mils to about 300 mils, from about 300 mils to about 2,000 mils, from about 300 mils to about 1,000 mils, from about 300 mils to about 800 mils, from about 300 mils to about 600 mils, from about 300 mils to about 500 mils, or from about 300 mils to about 400 mils.

[0016] The first flow of the first process gas includes at least two process or carrier gases selected from one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H), and argon, helium, nitrogen (N), or any combination thereof. Exemplary silicon-containing precursors can be or include silane, disilane, trisilane, tetrasilane, or any combination thereof. Exemplary nitrogen-containing precursors can be or include ammonia, hydrazine, one or more alkylamines (e.g., dimethylamine), or any combination thereof. In one or more examples, the first process gas includes silane, ammonia, hydrogen (H), argon, helium, and nitrogen (N).

[0017] The first flow of the first process gas comprises a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 30 sccm, or about 50 sccm to about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 400 sccm, about 500 sccm, about 800 sccm, about 1,000 sccm, about 1,500 sccm, or about 2,000 sccm. For example, the first flow of the first process gas may be from about 1 sccm to about 2,000 sccm, from about 1 sccm to about 1,000 sccm, from about 1 sccm to about 500 sccm, from about 1 sccm to about 250 sccm, from about 1 sccm to about 100 sccm, from about 1 sccm to about 50 sccm, from about 10 sccm to about 2,000 sccm, from about 10 sccm to about 1,000 sccm, from about 10 sccm to about 500 sccm, from about 10 sccm to about 250 sccm, from about 1 sccm to about 100 sccm, from about 1 sccm to about 500 sccm, from about 10 sccm to about 2,000 sccm, from about 10 sccm to about 1,000 sccm, from about 10 sccm to about 500 sccm, from about 10 sccm to about 250 sccm, from about 1 sccm to about 250 sccm, from about 1 sccm to about 100 sccm, from about 1 sccm to about 25 ... ccm to about 250 sccm, about 10 sccm to about 100 sccm, about 10 sccm to about 50 sccm, about 20 sccm to about 2,000 sccm, about 20 sccm to about 1,000 sccm, about 20 sccm to about 500 sccm, about 20 sccm to about 250 sccm, about 20 sccm to about 100 sccm, or about 20 sccm to about 50 sccm.

[0018] The first flow of the first process gas comprises a nitrogen-containing precursor (e.g., ammonia) having a flow rate of about 1 sccm, about 10 sccm, about 50 sccm, about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 500 sccm, or about 800 sccm to about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 2,500 sccm, about 3,000 sccm, about 4,000 sccm, about 5,000 sccm, about 7,000 sccm, about 8,500 sccm, or about 10,000 sccm. For example, the first flow of the first process gas may be from about 1 sccm to about 10,000 sccm, from about 10 sccm to about 10,000 sccm, from about 10 sccm to about 5,000 sccm, from about 10 sccm to about 4,000 sccm, from about 10 sccm to about 3,000 sccm, from about 10 sccm to about 2,000 sccm, from about 10 sccm to about 1,500 sccm, from about 10 sccm to about 1,500 sccm, or from about 10 sccm to about 1,500 sccm. ccm to about 1,000 sccm, about 10 sccm to about 800 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 4,000 sccm, about 50 sccm to about 3,000 sccm, about 50 sccm to about 2,000 sccm ccm, about 50 sccm to about 1,500 sccm, about 50 sccm to about 1,000 sccm, about 50 sccm to about 800 sccm, about 50 sccm to about 500 sccm, about 50 sccm to about 300 sccm, about 100 sccm to about 10,000 sccm, about 100 sccm to about 5,000 sccm, about 100 sccm to about 4,000 sccm, about 100 sccm to about 3,000 sccm, about 100 sccm to about 2,000 sccm, about 100 sccm to about 1,500 sccm, about 100 sccm to about 1,000 sccm, about 100 sccm to about 800 sccm, about 100 sccm to about 500 sccm, or about 100 sccm to about 300 sccm.

[0019] The first flow of the first process gas comprises helium having a flow rate of about 100 sccm, about 500 sccm, about 750 sccm, or about 1,000 sccm to about 1,500 sccm, about 2,000 sccm, about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.For example, the first flow of the first process gas may be from about 100 sccm to about 50,000 sccm, from about 500 sccm to about 50,000 sccm, from about 500 sccm to about 40,000 sccm, from about 500 sccm to about 20,000 sccm, from about 500 sccm to about 15,000 sccm, from about 500 sccm to about 12,000 sccm, from about 500 sccm to about 10,000 sccm, from about 500 sccm to about 8,000 sccm, from about 500 sccm to about 5,000 sccm, or from about 500 sccm to about 1,000 sccm, about 750 sccm to about 50,000 sccm, about 750 sccm to about 40,000 sccm, about 750 sccm to about 20,000 sccm, about 750 sccm to about 15,000 sccm, about 750 sccm to about 12,000 sccm, about 750 sccm to about 10,000 sccm, about 750 sccm to about 8,000 sccm, about 750 sccm to about 5,000 sccm, about 750 sccm to about 1,000 sccm, about 1,000 sccm to about 50,000 sccm 00 sccm, about 1,000 sccm to about 40,000 sccm, about 1,000 sccm to about 20,000 sccm, about 1,000 sccm to about 15,000 sccm, about 1,000 sccm to about 12,000 sccm, about 1,000 sccm to about 10,000 sccm, about 1,000 sccm to about 8,000 sccm, about 1,000 sccm to about 5,000 sccm, about 1,000 sccm to about 3,000 sccm, about 5,000 sccm to about 50,000 sccm, about 5,000 and helium having a flow rate of from 0 sccm to about 40,000 sccm, from about 5,000 sccm to about 30,000 sccm, from about 5,000 sccm to about 22,000 sccm, from about 5,000 sccm to about 20,000 sccm, from about 5,000 sccm to about 18,000 sccm, from about 5,000 sccm to about 15,000 sccm, from about 5,000 sccm to about 12,000 sccm, from about 5,000 sccm to about 10,000 sccm, or from about 5,000 sccm to about 8,000 sccm.

[0020] The first flow of the first process gas comprises nitrogen (N2) having a flow rate of about 100 sccm, about 500 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,500 sccm, about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, or about 15,000 sccm to about 18,000 sccm, about 20,000 sccm, about 22,000 sccm, about 25,000 sccm, about 30,000 sccm, about 35,000 sccm, about 40,000 sccm, or about 50,000 sccm. For example, the first flow of the first process gas may be from about 100 sccm to about 50,000 sccm, from about 500 sccm to about 50,000 sccm, from about 500 sccm to about 40,000 sccm, from about 500 sccm to about 20,000 sccm, from about 500 sccm to about 15,000 sccm, from about 500 sccm to about 12,000 sccm, from about 500 sccm to about 10,000 sccm, from about 500 sccm to about 10,000 sccm, About 8,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 1,000 sccm, about 1,000 sccm to about 50,000 sccm, about 1,000 sccm to about 40,000 sccm, about 1,000 sccm to about 30,000 sccm, about 1,000 sccm to about 25,000 sccm, about 1,000 sccm to about 22,000 sccm, about 1,000 sccm to about 20,000 sccm, about 1,000 sccm to about 15,000 sccm, about 1,000 sccm to about 12,000 sccm, about 1,000 sccm to about 10,000 sccm, about 1,000 sccm to about 8,000 sccm, about 1,000 sccm to about 5,000 sccm, about 1,000 sccm to about 3,000 sccm, about 5,000 sccm to about 50,000 sccm, about 5,000 sccm m to about 40,000 sccm, about 5,000 sccm to about 30,000 sccm, about 5,000 sccm to about 25,000 sccm, about 5,000 sccm to about 22,000 sccm, about 5,000 sccm to about 20,000 sccm, about 5,000 sccm to about 18,000 sccm, about 5,000 sccm to about 15,000 sccm, about 5,000 sccm to about 12,000 sccm, about 5,000 sccm to about 10,000 sccm, about 5,000 sccm to about 8,000 sccm, about 10,000 sccm to about 50,000 sccm, about 10,000 sccm to about 40,000 sccm, about 10,000 sccm to about 30,000 sccm, about 10,000 sccm to about 25,000 sccm, about 10,000 sccm to about 22,000 sccm, about 10,000 sccm to about 20,000 sccm, about 10,000 sccm to about 18,000 sccm, about 10,000 sccm to about 15,000 sccm cm, about 10,000 sccm to about 12,000 sccm, about 12,000 sccm to about 50,000 sccm, about 12,000 sccm to about 40,000 sccm, about 12,000 sccm to about 30,000 sccm, about 12,000 sccm to about 25,000 sccm, about 12,000 sccm to about 22,000 sccm, about 12,000 sccm to about 20,000 sccm, about 12,000 sccm to about 18,000 sccm, or about 12,000 sccm to about 15,000 sccm.

[0021] The first flow of the first process gas comprises argon having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4,000 sccm, or about 5,000 sccm to about 6,000 sccm, about 7,500 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.For example, the first flow of the first process gas may be from about 50 sccm to about 50,000 sccm, from about 50 sccm to about 30,000 sccm, from about 50 sccm to about 25,000 sccm, from about 50 sccm to about 20,000 sccm, from about 50 sccm to about 15,000 sccm, from about 50 sccm to about 12,000 sccm, from about 50 sccm to about 10,000 sccm, from about 50 sccm to about 7,500 sccm, from about 50 sccm to about 6, 000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 3,000 sccm, about 50 sccm to about 1,000 sccm, about 200 sccm to about 50,000 sccm, about 200 sccm to about 30,000 sccm, about 200 sccm to about 25,000 sccm, about 200 sccm to about 20,000 sccm, about 200 sccm to about 15,000 sccm, about 200 sccm to about 12,000 sccm, about 200 sccm to about 10,000 sccm, about 200 sccm to about 7,500 sccm, about 200 sccm to about 6,000 sccm, about 200 sccm to about 5,000 sccm, about 200 sccm to about 3,000 sccm, about 200 sccm to about 1,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 30,000 sccm, about 500 sccm to about 25,000 sccm, about 500 sccm and argon having a flow rate of from about 20,000 sccm, from about 500 sccm to about 15,000 sccm, from about 500 sccm to about 12,000 sccm, from about 500 sccm to about 10,000 sccm, from about 500 sccm to about 7,500 sccm, from about 500 sccm to about 6,000 sccm, from about 500 sccm to about 5,000 sccm, from about 500 sccm to about 3,000 sccm, or from about 500 sccm to about 1,000 sccm.

[0022] The first flow of the first process gas comprises hydrogen (H) having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4,000 sccm, or about 5,000 sccm to about 6,000 sccm, about 7,500 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.For example, the first flow of the first process gas may be from about 50 sccm to about 50,000 sccm, from about 50 sccm to about 30,000 sccm, from about 50 sccm to about 25,000 sccm, from about 50 sccm to about 20,000 sccm, from about 50 sccm to about 15,000 sccm, from about 50 sccm to about 12,000 sccm, from about 50 sccm to about 10,000 sccm, from about 50 sccm to about 7,500 sccm, from about 50 sccm to about 6, 000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 3,000 sccm, about 50 sccm to about 1,000 sccm, about 200 sccm to about 50,000 sccm, about 200 sccm to about 30,000 sccm, about 200 sccm to about 25,000 sccm, about 200 sccm to about 20,000 sccm, about 200 sccm to about 15,000 sccm, about 200 sccm to about 12,000 sccm, About 200 sccm to about 10,000 sccm, about 200 sccm to about 7,500 sccm, about 200 sccm to about 6,000 sccm, about 200 sccm to about 5,000 sccm, about 200 sccm to about 3,000 sccm, about 200 sccm to about 1,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 30,000 sccm, about 500 sccm to about 25,000 sccm, about 500 sccm The hydrogen may have a flow rate of from about 500 sccm to about 20,000 sccm, from about 500 sccm to about 15,000 sccm, from about 500 sccm to about 12,000 sccm, from about 500 sccm to about 10,000 sccm, from about 500 sccm to about 7,500 sccm, from about 500 sccm to about 6,000 sccm, from about 500 sccm to about 5,000 sccm, from about 500 sccm to about 3,000 sccm, or from about 500 sccm to about 1,000 sccm.

[0023] In one or more examples, the first flow of the first process gas includes silane having a flow rate between about 1 sccm and about 500 sccm, ammonia having a flow rate between about 10 sccm and about 5,000 sccm, helium having a flow rate between about 500 sccm and about 20,000 sccm, nitrogen (N2) having a flow rate between about 5,000 sccm and about 25,000 sccm, argon having a flow rate between about 50 sccm and about 10,000 sccm, and hydrogen (H2) having a flow rate between about 50 sccm and about 20,000 sccm. In another example, the first flow of the first process gas includes silane having a flow rate between about 10 sccm and about 250 sccm, ammonia having a flow rate between about 50 sccm and about 2,000 sccm, helium having a flow rate between about 750 sccm and about 15,000 sccm, nitrogen having a flow rate between about 10,000 sccm and about 20,000 sccm, argon having a flow rate between about 200 sccm and about 7,500 sccm, and hydrogen having a flow rate between about 200 sccm and about 15,000 sccm. In some examples, the first flow of the first process gas includes silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1,000 sccm, helium having a flow rate of about 1,000 sccm to about 10,000 sccm, nitrogen having a flow rate of about 12,000 sccm to about 18,000 sccm, argon having a flow rate of about 500 sccm to about 5,000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10,000 sccm.

[0024] In one or more embodiments, the second process gas includes one or more boron-containing precursors (e.g., diborane) and hydrogen (H). In some examples, the second process gas includes about 20 mol% or less diborane, with the remainder being hydrogen. The second process gas includes the boron-containing precursor (e.g., diborane) at a concentration of about 1 mol percent (mol%), about 2 mol%, about 3 mol%, about 4 mol%, or about 5 mol% to about 6 mol%, about 8 mol%, about 10 mol%, about 12 mol%, about 15 mol%, or about 20 mol%. For example, the second process gas may include a boron-containing precursor (e.g., diborane) at a concentration of about 2 mol% to about 20 mol%, about 2 mol% to about 15 mol%, about 2 mol% to about 12 mol%, about 2 mol% to about 10 mol%, about 2 mol% to about 8 mol%, about 2 mol% to about 5 mol%, about 2 mol% to about 3 mol%, about 3 mol% to about 20 mol%, about 3 mol% to about 15 mol%, about 3 mol% to about 12 mol%, about 3 mol% to about 10 mol%, about 3 mol% to about 8 mol%, about 3 mol% to about 5 mol%, about 5 mol% to about 20 mol%, about 5 mol% to about 15 mol%, about 5 mol% to about 12 mol%, about 5 mol% to about 10 mol%, or about 5 mol% to about 8 mol%.

[0025] The second process gas includes hydrogen (H) at a concentration of about 80 mol%, about 85 mol%, about 88 mol%, about 90 mol%, about 92 mol%, about 94 mol%, or about 95 mol% to about 96 mol%, about 97 mol%, about 98 mol%, or about 99 mol%. For example, the second process gas may contain hydrogen at a concentration of about 80 mol% to about 99 mol%, about 80 mol% to about 95 mol%, about 80 mol% to about 92 mol%, about 80 mol% to about 90 mol%, about 80 mol% to about 88 mol%, about 80 mol% to about 85 mol%, about 85 mol% to about 99 mol%, about 85 mol% to about 98 mol%, about 85 mol% to about 95 mol%, about 85 mol% to about 92 mol%, about 85 mol% to about 90 mol%, about 85 mol% to about 88 mol%, about 88 mol% to about 97 mol%, about 90 mol% to about 99 mol%, about 90 mol% to about 95 mol%, about 90 mol% to about 92 mol%, or about 95 mol% to about 99 mol%.

[0026] In one or more examples, the second flow of the second process gas has a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 35 sccm, about 50 sccm, about 65 sccm, about 80 sccm, or about 100 sccm to about 150 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 800 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4,000 sccm, or about 5,000 sccm. For example, the second flow of the second process gas may be from about 1 sccm to about 5,000 sccm, from about 1 sccm to about 3,000 sccm, from about 1 sccm to about 2,000 sccm, from about 1 sccm to about 1,000 sccm, from about 1 sccm to about 500 sccm, from about 1 sccm to about 300 sccm, from about 1 sccm to about 200 sccm, from about 1 sccm to about 100 sccm, from about 1 sccm to about 50 sccm, from about 5 sccm to about 5,000 sccm, from about 5 sccm to about 3,000 sccm, from about 5 sccm to about 2,000 sccm, from about 5 sccm to about 1,000 sccm, or from about 5 sccm to about 500 sccm, about 5 sccm to about 300 sccm, about 5 sccm to about 200 sccm, about 5 sccm to about 100 sccm, about 5 sccm to about 50 sccm, about 10 sccm to about 5,000 sccm, about 10 sccm to about 3,000 sccm, about 10 sccm to about 2,000 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 10 sccm to about 200 sccm, about 10 sccm to about 100 sccm, or about 10 sccm to about 50 sccm.

[0027] In one or more examples, the second process gas includes about 2 mol% to about 15 mol% diborane and about 85 mol% to about 98 mol% hydrogen and has a flow rate of about 1 sccm to about 5,000 sccm. In other examples, the second process gas includes about 3 mol% to about 12 mol% diborane and about 88 mol% to about 97 mol% hydrogen and has a flow rate of about 5 sccm to about 2,000 sccm. In some examples, the second process gas includes about 5 mol% to about 10 mol% diborane and about 90 mol% to about 95 mol% hydrogen and has a flow rate of about 10 sccm to about 1,000 sccm.

[0028] Properties of Silicon Nitride Layers or Materials The silicon boron nitride layer includes at least boron, silicon, nitrogen, and hydrogen. In some examples, the silicon boron nitride layer includes more nitrogen than silicon, more silicon than boron, and more boron than hydrogen. In one or more embodiments, the silicon boron nitride layer can have a boron concentration of about 10 atomic percent (at%), about 12 at%, about 15 at%, or about 18 at% to about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the silicon boron nitride layer may have a SiO 2 content of about 10 at % to about 50 at %, about 10 at % to about 45 at %, about 10 at % to about 40 at %, about 10 at % to about 35 at %, about 10 at % to about 30 at %, about 10 at % to about 28 at %, about 10 at % to about 25 at %, about 10 at % to about 22 at %, about 10 at % to about 20 at %, about 10 at % to about 18 at %, about 12 at % to about 45 at %, about 12 at % to about 40 at %, about 12 at % to about 30 at %, about 15 at % to about 50 at %, about 15 at % to about 45 at %, about 15 at % to about 40 at%, about 15 at% to about 35 at%, about 15 at% to about 30 at%, about 15 at% to about 28 at%, about 15 at% to about 25 at%, about 15 at% to about 22 at%, about 15 at% to about 20 at%, about 15 at% to about 18 at%, about 20 at% to about 50 at%, about 20 at% to about 45 at%, about 20 at% to about 40 at%, about 20 at% to about 35 at%, about 20 at% to about 30 at%, about 20 at% to about 28 at%, about 20 at% to about 25 at%, or about 20 at% to about 22 at%.

[0029] The silicon boron nitride layer can have a hydrogen concentration of about 1 at%, about 2 at%, about 3 at%, about 4 at%, about 5 at%, or about 6 at% to about 7 at%, about 8 at%, about 10 at%, about 12 at%, about 15 at%, about 18 at%, or about 20 at%. For example, the silicon boron nitride layer can have a hydrogen concentration of about 1 at% to about 20 at%, about 1 at% to about 15 at%, about 2 at% to about 15 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 6 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 1 at% to about 10 at%, about 2 at% to about 10 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, about 6 at% to about 10 at%, or about 8 at% to about 10 at%.

[0030] The silicon boron nitride layer can have a nitrogen concentration of about 20 at%, about 22 at%, about 25 at%, about 28 at%, or about 30 at% to about 32 at%, about 35 at%, about 38 at%, about 40 at%, about 42 at%, about 45 at%, about 48 at%, or about 50 at%. For example, the silicon boron nitride layer can have a nitrogen concentration of about 20 at% to about 50 at%, about 20 at% to about 40 at%, about 20 at% to about 35 at%, about 20 at% to about 30 at%, about 20 at% to about 25 at%, about 25 at% to about 50 at%, about 25 at% to about 40 at%, about 25 at% to about 35 at%, about 25 at% to about 30 at%, about 25 at% to about 28 at%, about 30 at% to about 50 at%, about 30 at% to about 40 at%, about 30 at% to about 35 at%, or about 30 at% to about 32 at%.

[0031] The silicon boron nitride layer can have a silicon concentration of about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, or about 30 at% to about 32 at%, about 35 at%, about 38 at%, about 40 at%, about 42 at%, or about 45 at%. For example, the silicon boron nitride layer can have a silicon concentration of about 18 at% to about 45 at%, about 18 at% to about 40 at%, about 18 at% to about 35 at%, about 18 at% to about 30 at%, about 18 at% to about 25 at%, about 25 at% to about 45 at%, about 25 at% to about 40 at%, about 25 at% to about 35 at%, about 25 at% to about 30 at%, about 25 at% to about 28 at%, about 30 at% to about 45 at%, about 30 at% to about 40 at%, about 30 at% to about 35 at%, about 30 at% to about 32 at%, about 28 at% to about 40 at%, about 28 at% to about 35 at%, or about 28 at% to about 32 at%.

[0032] In one or more embodiments, the silicon boron nitride layer has an atomic ratio of nitrogen to silicon greater than 1. The silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05, about 1.1, about 1.15, or about 1.2 to about 1.25, about 1.3, about 1.35, about 1.4, about 1.45, or about 1.5. For example, the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5, about 1.05 to about 1.4, about 1.05 to about 1.35, about 1.05 to about 1.3, about 1.05 to about 1.25, about 1.05 to about 1.2, about 1.05 to about 1.1, about 1.1 to about 1.5, about 1.1 to about 1.4, about 1.1 to about 1.35, about 1.1 to about 1.3, about 1.1 to about 1.25, about 1.1 to about 1.2, about 1.15 to about 1.5, about 1.15 to about 1.4, about 1.15 to about 1.35, about 1.15 to about 1.3, about 1.15 to about 1.25, or about 1.15 to about 1.2. In some embodiments, the silicon boron nitride layer comprises about 60 at% to about 80 at% boron bonded to silicon and about 20 at% to about 40 at% boron bonded to nitrogen.

[0033] In one or more embodiments, the silicon boron nitride layer has a resistivity of 1×10 at 1.5 MV / cm -9A / cm 2 The silicon boron nitride layer has a leakage current of about 5×10 -11 A / cm 2 , about 6×10 -11 A / cm 2 , about 8×10 -11 A / cm 2 , about 9×10 -11 A / cm 2 , or approximately 1 × 10 at 1.5 MV / cm -10 A / cm 2 to approximately 2 × 10 -10 A / cm 2 , about 6×10 -10 A / cm 2 , about 7.5×10 -10 A / cm 2 , about 8×10 -10 A / cm 2 , or approximately 9.9 × 10 at 1.5 MV / cm -10 A / cm 2 In some examples, the silicon boron nitride layer has a leakage current of about 5×10 at 1.5 MV / cm. -11 A / cm 2 to approximately 9.9 x 10 -10 A / cm 2 or approximately 1 x 10 at 1.5MV / cm -10 A / cm 2 From about 7 x 10 -10 A / cm 2 has a leakage current of

[0034] In one or more examples, the silicon boron nitride layer comprises about 10 at% to about 50 at% boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a densitometric value of 1×10 at 1.5 MV / cm. -9 A / cm 2 In another example, the silicon boron nitride layer comprises about 20 at% to about 35 at% boron, has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and has a leakage current of less than about 5×10 at 1.5 MV / cm. -11 A / cm 2 to approximately 9.9 x 10 -10 A / cm 2 has a leakage current of

[0035] The silicon boron nitride layer has a thickness of about 50 Å, about 80 Å, about 100 Å, about 120 Å, or about 150 Å to about 180 Å, about 200 Å, about 250 Å, about 300 Å, about 400 Å, about 500 Å, about 600 Å, about 700 Å, about 800 Å, or about 1,000 Å. For example, the silicon boron nitride layer may have a thickness of from about 50 Å to about 1,000 Å, from about 50 Å to about 800 Å, from about 50 Å to about 600 Å, from about 50 Å to about 500 Å, from about 50 Å to about 400 Å, from about 50 Å to about 300 Å, from about 50 Å to about 200 Å, from about 50 Å to about 150 Å, from about 50 Å to about 100 Å, from about 50 Å to about 80 Å, from about 80 Å to about 1,000 Å, from about 80 Å to about 800 Å, from about 80 Å to about 600 Å, from about 80 Å to about The thickness may be 800 Å, about 80 Å to about 400 Å, about 80 Å to about 300 Å, about 80 Å to about 200 Å, about 80 Å to about 150 Å, about 80 Å to about 100 Å, about 100 Å to about 1,000 Å, about 100 Å to about 800 Å, about 100 Å to about 600 Å, about 100 Å to about 1,000 Å, about 100 Å to about 400 Å, about 100 Å to about 300 Å, about 100 Å to about 200 Å, or about 100 Å to about 150 Å.

[0036] In some examples, the silicon boron nitride layer is a stopper layer and has a thickness of about 50 Å, about 80 Å, about 100 Å, about 120 Å, or about 150 Å to about 180 Å, about 200 Å, about 250 Å, or about 300 Å. For example, the stopper layer comprises silicon boron nitride and has a thickness of about 50 Å to about 300 Å, about 100 Å to about 200 Å, or about 125 Å to about 175 Å. In other examples, the silicon boron nitride layer is a support layer and has a thickness of about 100 Å, about 120 Å, about 150 Å, about 180 Å, or about 200 Å to about 220 Å, about 250 Å, about 280 Å, about 300 Å, about 350 Å, about 400 Å, about 450 Å, about 500 Å, or about 600 Å. For example, the support layer may comprise silicon boron nitride and have a thickness of about 100 Å to about 600 Å, about 300 Å to about 500 Å, or about 350 Å to about 450 Å.

[0037] 1 is a schematic cross-sectional view of a processing chamber 100, such as a PE-CVD chamber, utilized during one or more methods for forming silicon boron nitride materials and layers. The processing chamber 100 includes a chamber body 102 coupled to a vacuum pump 104 and an input manifold 106 coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise includes a processing region 112 that includes a pedestal 114 disposed therein to support a substrate 101. The pedestal 114 includes a heating element (not shown) and a mechanism for holding the substrate 101 on the pedestal 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, or the like (not shown). The pedestal 114 is coupled to and movably positioned within the processing region 112 by a stem 116 connected to a lift chamber (not shown) that moves the pedestal 114 between an elevated processing position and a lowered position, facilitating transfer of the substrate 101 into and out of the processing chamber 100 through an opening 118 in the chamber body 102.

[0038] A first flow controller 120, such as a mass flow control (MFC) device, is disposed between the first gas source 108 and the input manifold 106 to control a first flow of a first process gas from the first gas source 108 to a showerhead assembly 124 used to distribute the first process gas throughout the processing region 112. The showerhead assembly may include a faceplate 121, a shielding plate 123, and a gas box 125, as shown in FIG. 1. The first and second process gases may be maintained separately through the input manifold 106 and then combined immediately upstream of the gas box 125.

[0039] In one or more examples, a first flow of a first process gas via line 131 is transported from a first gas source 108 through input manifold 106, a second flow of a second process gas via line 133 is transported from a second gas source 110 through input manifold 106, and both the first flow of the first process gas via line 131 and the second flow of the second process gas via line 133 are combined before being introduced into gas box 125 and ultimately into processing region 112 to generate a third flow of a third process gas via line 135.

[0040] The third flow of the third process gas via line 135 can be maintained at a temperature low enough to prevent a portion of the precursors (e.g., diborane, silane, and / or ammonia) from reacting in the line and creating dust or particulates throughout the showerhead assembly 124, the processing region 112, and / or the substrate 101. In some examples, the third flow of the third process gas via line 135 is maintained at a temperature below 165°C, such as about 20°C, about 25°C, about 35°C, about 50°C, about 65°C, about 90°C, or about 100°C to about 110°C, about 125°C, about 135°C, about 150°C, about 160°C, or about 164°C. For example, the third flow of the third process gas via line 135 may be at a temperature between about 20° C. and less than 165° C., between about 50° C. and less than 165° C., between about 75° C. and less than 165° C., between about 90° C. and less than 165° C., between about 100° C. and less than 165° C., between about 120° C. and less than 165° C., between about 150° C. and less than 165° C., between about 20° C. and about 160° C., between about 50° C. and about 160° C. , about 75°C to about 160°C, about 90°C to about 160°C, about 100°C to about 160°C, about 120°C to about 160°C, about 150°C to about 160°C, about 20°C to about 140°C, about 50°C to about 140°C, about 75°C to about 140°C, about 90°C to about 140°C, about 100°C to about 140°C, or about 120°C to about 140°C.

[0041] According to one or more embodiments that can be combined with other embodiments described herein, the first process gas includes at least one or more silicon-containing precursors, one or more nitrogen-containing precursors, and one or more carrier gases and / or process gases (e.g., helium, argon, hydrogen, and / or nitrogen). For example, the first process gas includes silane (SiH), ammonia (NH), helium (He), nitrogen (N), argon (Ar), and hydrogen (H). A second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of the second process gas from the second gas source 110 to a showerhead assembly 124 for distributing the second process gas across the processing region 112. According to one or more embodiments that can be combined with other embodiments described herein, the second process gas includes at least one or more boron-containing precursors and hydrogen gas, such as a mixture of diborane (BH) and hydrogen (H).

[0042] The showerhead assembly 124 is coupled to and fluidly connected to a remote plasma system (RPS) 105. The RPS 105 can be used to form a plasma in the processing region 112 from the first and second process gases in the processing region 112. In some examples, the plasma is ignited or otherwise generated in the RPS 105, which is located outside the chamber body 102. The plasma is transported or otherwise introduced into the processing region 112 during deposition of a silicon boron nitride layer on the substrate 101.

[0043] A third gas source 128 may be coupled to the chamber body 102 to supply additional process gases (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure within the processing region 112. A controller 130 is coupled to the processing chamber 100 and configured to control process conditions in the processing chamber 100 during a deposition process or other process.

[0044] 2 is a schematic cross-sectional view of a processing chamber 200, such as a PE-CVD chamber, for use in the method of forming a silicon boron nitride layer described and discussed herein, according to another embodiment. The processing chamber 200 includes a chamber body 102 coupled to a vacuum pump 104 and a manifold 106 coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise includes a processing region 112 including a pedestal 114 disposed therein to support a substrate 101. The pedestal 114 includes a heating element (not shown) and a mechanism for holding the substrate 101 on the pedestal 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, or the like (not shown). The pedestal 114 is coupled to and movably positioned within the processing region 112 by a stem 116 connected to a lift chamber (not shown) that moves the pedestal 114 between an elevated processing position and a lowered position, facilitating transfer of the substrate 101 into and out of the processing chamber 200 through an opening 118 in the chamber body 102.

[0045] A first flow controller 120, such as an MFC device, is disposed between the first gas source 108 and the input manifold 106 to control a first flow of a first process gas from the first gas source 108 to a showerhead assembly 124 used to distribute the first process gas across the processing region 112. According to embodiments that may be combined with other embodiments described herein, the first process gas includes at least silane (SiH), ammonia (NH), helium (He), nitrogen (N), argon (Ar), and hydrogen (H). A second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of a second process gas from the second gas source 110 to the showerhead assembly 124 for distributing the second process gas across the processing region 112. According to embodiments that may be combined with other embodiments described herein, the second process gas includes at least diborane (BH) and hydrogen (H). The showerhead assembly 124 is coupled to a radio frequency (RF) power source 126 to form a plasma in the processing region 112 from the first and second process gases in the processing region 112. A third gas source 128 may be coupled to the chamber body 102 to supply additional process gases (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure in the processing region 112. A controller 130 is coupled to the processing chamber 200 and configured to control aspects of the processing chamber 200 during processing.

[0046] FIG. 3 is a flow diagram of a method 300 for forming a silicon boron nitride layer. For ease of explanation, FIG. 3 will be described with reference to FIGS. 2 and 3. However, it should be noted that chambers other than processing chambers 100 and 200 can be utilized in conjunction with method 300. In operation 301, a substrate 101 is positioned in the processing region 112 of processing chamber 100, 200. The substrate 101 is positioned at a process distance between the pedestal 114 and the showerhead assembly 124 of about 100 mils (about 2.5 millimeters (mm)) to about 5,000 mils (about 127 mm), or about 200 mils (about 5 mm) to about 1,000 mils (about 25.4 mm). In operation 302, the processing region 112 is heated to a deposition temperature of about 575° C. or less. This deposition temperature is maintained throughout method 300. According to embodiments, which may be combined with other embodiments described herein, a deposition temperature of about 550° C. or less in the processing region 112 is achieved by heating the pedestal 114. For example, the deposition temperature is from about 225° C. to about 575° C. During the method 300, the processing region 112 is maintained at a pressure of from about 2 Torr to about 8 Torr, or from about 3 Torr to about 6 Torr.

[0047] In operation 303 , a first flow of a first process gas is provided to the processing region 112 . The first flow of the first process gas includes about 0 sccm to about 2,000 sccm, or about 1 sccm to about 500 sccm of silane, about 0 sccm to about 1,000 sccm, or about 10 sccm to about 5,000 sccm of ammonia, about 0 sccm to about 50,000 sccm, or about 500 sccm to about 20,000 sccm of helium, about 0 sccm to about 50,000 sccm, or about 5,000 sccm to about 25,000 sccm of nitrogen (N), about 0 sccm to about 50,000 sccm, or about 50 sccm to about 10,000 sccm of argon, and about 0 sccm to about 50,000 sccm, or about 50 sccm to about 20,000 sccm of hydrogen (H). In operation 304, the first flow of the first process gas is stopped. In operation 305, a second flow of a second process gas is provided to the processing region 112 while a plasma is formed. According to embodiments that may be combined with other embodiments described herein, the plasma is introduced into and / or generated in the processing region 112 by the RPS 105 of the processing chamber 100 or by RF current supplied from the RF power source 126 to the showerhead assembly 124 in the processing chamber 200. The second flow of the second process gas includes about 0 sccm to about 10,000 sccm, or about 1 sccm to about 5,000 sccm of the second process gas. About 2 mol % to about 15 mol % of the second process gas flow is diborane, and the remainder is hydrogen (H). The method 300 forms a silicon boron nitride layer having a boron concentration of about 10 at % to about 50 at %, or about 10 at % to about 20 at %, and a leakage current of 1×10 at 1.5 MV / cm. -9 A / cm 2 is less than.

[0048] FIG. 4 illustrates a capacitor device 400 including one or more silicon boron nitride layers or materials that can be deposited or otherwise produced on a substrate by a method according to one or more embodiments described and discussed herein. The capacitor device 400 is formed on a dielectric layer 402 deposited on a substrate. The dielectric layer 402 can be or can include one or more dielectric materials, such as silicon (e.g., amorphous silicon). A nitride barrier layer 404 is disposed on the walls of vias formed in the dielectric layer 402, as well as on metal contacts 406. The nitride barrier layer 404 includes one or more metal nitride materials, such as titanium nitride, tantalum nitride, tungsten nitride, silicides thereof, or any combination thereof. The metal contacts 406 include copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof. An oxide layer 410 is contained within the nitride barrier layer 404 and includes one or more holes or voids 408 defined by or otherwise formed by the oxide layer 410. The oxide layer may be or may include silicon oxide or a dopant thereof. As shown in Figure 4, a stopper layer 420 including silicon boron nitride may be disposed on the bottom of the capacitor device 400, a supporter layer 422 including silicon boron nitride may be disposed in the middle portion of the capacitor device 400, and a supporter layer 422 including silicon boron nitride may be disposed on the top of the capacitor device 400.

[0049] In one or more embodiments, a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a processing region within a processing chamber and introducing a first flow of a first process gas and a second flow of a second process gas into the processing region. The first flow of the first process gas includes one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H), and at least two gases selected from argon, helium, nitrogen (N), or any combination thereof. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas into the processing region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0050] In another embodiment, a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a processing region within a processing chamber, heating the pedestal holding the substrate to a deposition temperature and maintaining the processing pressure as described and discussed above, and introducing a first flow of a first process gas into the processing region. The first flow of the first process gas includes one or more silicon-containing precursors, one or more nitrogen-containing precursors, helium, nitrogen (N), argon, and hydrogen (H). The method further includes stopping the first flow of the first process gas, forming a plasma simultaneously with a second flow of a second process gas into the processing region, the second process gas including one or more boron-containing precursors and hydrogen (H), and forming a silicon boron nitride layer on the substrate.

[0051] In summary, a boron concentration of about 20 at% to about 40 at% and a 1×10 -9 A / cm 2A method for forming a silicon boron nitride layer having a leakage current of less than 100 Å is provided. The use of hydrogen gas enables the formation of a nitrogen-rich, silicon-rich, and boron-rich layer. The hydrogen gas breaks Si-H bonds to remove hydrogen within the layer and generate dangling bonds, while the process gas reacts with the active surface of the substrate (e.g., the dangling bonds) to generate Si-Si bonds, Si-N bonds, and Si-B bonds.

[0052] Embodiments of the present disclosure further relate to any one or more of the following items 1 to 35:

[0053] 1. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; introducing a first flow of a first process gas and a second flow of a second process gas into the processing region, the first flow of the first process gas being selected from the group consisting of silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N2) having a flow rate of about 5,000 sccm to about 25,000 sccm, and argon (Am) having a flow rate of about 500 sccm to about 20,000 sccm. 1. The method of claim 1, wherein a first flow of a first process gas comprises argon having a flow rate of about 10,000 sccm to about 10,000 sccm and hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm, and a second flow of a second process gas comprises about 2 mole percent (mol%) to about 15 mole% diborane, about 85 mole% to about 98 mole% hydrogen (H2), and a flow rate of about 1 sccm to about 5,000 sccm; simultaneously forming a plasma with the first flow of the first process gas and the second flow of the second process gas into a processing region; and exposing a substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0054] 2. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; introducing a first flow of a first process gas and a second flow of a second process gas into the processing region, wherein the first flow of the first process gas comprises a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H), and at least two gases selected from the group consisting of argon, helium, nitrogen (N), and any combination thereof; and the second flow of the second process gas comprises about 2 mole percent (mol%) to about 15 mol% diborane, about 85 mol% to about 98 mol% hydrogen (H). 2), and at a flow rate of about 1 sccm to about 5,000 sccm; forming a plasma simultaneously with a first flow of a first process gas and a second flow of a second process gas into the processing region; and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate, wherein the silicon boron nitride layer comprises about 10 atomic percent (at %) to about 50 at % boron, the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5, and the silicon boron nitride layer has a fluence of about 1×10 at 1.5 MV / cm. -9 A / cm 2 having a leakage current of less than

[0055] 3. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; maintaining the processing region at a pressure of about 2 Torr to about 8 Torr; and introducing a first flow of a first process gas into the processing region, the first flow of the first process gas being selected from the group consisting of silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, and arsenic having a flow rate of about 5,000 sccm to about 25,000 sccm. 1. A method of forming a silicon nitride layer on a substrate, the method comprising: introducing a first process gas into the processing region, the second process gas comprising: nitrogen (N2) having a flow rate of about 50 sccm to about 10,000 sccm; argon having a flow rate of about 50 sccm to about 10,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm; argon having a flow rate of about 50 sccm to about 20,000 sccm;

[0056] 4. The method of any one of paragraphs 1 to 3, wherein the silicon boron nitride layer comprises about 10 atomic percent (at%) to about 50 at% boron.

[0057] 5. The method of any one of paragraphs 1 to 4, wherein the silicon boron nitride layer comprises about 10 at% to about 20 at% boron.

[0058] 6. The method of any one of paragraphs 1 to 5, wherein the silicon boron nitride layer comprises about 20 at% to about 30 at% boron.

[0059] 7. The method of any one of paragraphs 1 to 6, wherein the silicon boron nitride layer comprises about 15 at% to about 30 at% boron.

[0060] 8. The method of any one of paragraphs 1 to 7, wherein the silicon boron nitride layer comprises about 15 at% to about 20 at% boron.

[0061] 9. The method of any one of paragraphs 1 to 8, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5.

[0062] 10. The method of any one of paragraphs 1 to 9, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.1 to about 1.4.

[0063] 11. The method of any one of paragraphs 1 to 10, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.15 to about 1.35.

[0064] 12. The method of any one of paragraphs 1 to 11, wherein the silicon boron nitride layer comprises about 5 at% to about 15 at% hydrogen.

[0065] 13. The silicon boron nitride layer is 1 × 10 at 1.5 MV / cm. -9 A / cm 2 13. The method of any one of clauses 1 to 12, having a leakage current of less than

[0066] 14. The silicon boron nitride layer has a resistivity of approximately 5 × 10 at 1.5 MV / cm. -11 A / cm 2 to approximately 9.9 x 10 -10 A / cm 2 14. The method of any one of claims 1 to 13, having a leakage current of

[0067] 15. The silicon boron nitride layer has a resistivity of approximately 1 × 10 at 1.5 MV / cm. -10 A / cm 2 From about 7 × 10 -10 A / cm 2 15. The method of any one of clauses 1 to 14, having a leakage current of

[0068] 16. The method of any one of paragraphs 1 to 15, wherein the silicon boron nitride layer comprises about 60 at% to about 80 at% boron bonded to silicon; and about 20 at% to about 40 at% boron bonded to nitrogen.

[0069] 17. The method of any one of paragraphs 1 to 16, wherein the deposition temperature is from about 350°C to about 560°C.

[0070] 18. The method of any one of paragraphs 1 to 17, wherein the deposition temperature is from about 450°C to about 550°C.

[0071] 19. The method of any one of paragraphs 1 to 18, wherein a first flow of a first process gas and a second flow of a second process gas are combined before being introduced into the processing region to produce a third flow of a third process gas.

[0072] 20. The method of claim 19, wherein the third flow of the third process gas is maintained at a temperature of from about 20°C to less than 165°C.

[0073] 21. The method of any one of paragraphs 1 to 20, wherein the first flow of the first process gas comprises silane having a flow rate of about 10 sccm to about 250 sccm, ammonia having a flow rate of about 50 sccm to about 2,000 sccm, helium having a flow rate of about 750 sccm to about 15,000 sccm, nitrogen having a flow rate of about 10,000 sccm to about 20,000 sccm, argon having a flow rate of about 200 sccm to about 7,500 sccm, and hydrogen having a flow rate of about 200 sccm to about 15,000 sccm.

[0074] 22. The method of any one of paragraphs 1 to 21, wherein the first flow of the first process gas comprises silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1,000 sccm, helium having a flow rate of about 1,000 sccm to about 10,000 sccm, nitrogen having a flow rate of about 12,000 sccm to about 18,000 sccm, argon having a flow rate of about 500 sccm to about 5,000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10,000 sccm.

[0075] 23. The method of any one of paragraphs 1 to 22, wherein the second flow of the second process gas comprises about 3 mol % to about 12 mol % diborane, about 88 mol % to about 97 mol % hydrogen, and a flow rate of about 5 sccm to about 2,000 sccm.

[0076] 24. The method of any one of paragraphs 1 to 23, wherein the second flow of the second process gas comprises about 5 mol% to about 10 mol% diborane, about 90 mol% to about 95 mol% hydrogen, and a flow rate of about 10 sccm to about 1,000 sccm.

[0077] 25. The method of any one of paragraphs 1 to 24, further comprising maintaining the processing region at a pressure of about 2 Torr to about 8 Torr.

[0078] 26. The method of any one of paragraphs 1 to 25, wherein the pedestal is positioned at a process distance between the pedestal and the showerhead of the processing chamber of about 200 mils to about 1,000 mils.

[0079] 27. The method of any one of paragraphs 1 to 26, wherein the silicon boron nitride layer is located within a capacitor device disposed on a substrate.

[0080] 28. The method of any one of paragraphs 1 to 27, wherein the silicon boron nitride layer is a support layer of a capacitor device.

[0081] 29. The method of any one of paragraphs 1 to 28, wherein the silicon boron nitride layer is a stopper layer for a capacitor device.

[0082] 30. The method of any one of paragraphs 1 to 29, wherein the silicon boron nitride layer has a thickness of about 50 Å to about 800 Å.

[0083] 31. The method of any one of paragraphs 1 to 30, wherein the silicon boron nitride layer is a stopper layer and has a thickness of about 100 Å to about 200 Å, or about 150 Å.

[0084] 32. The method of any one of paragraphs 1 to 31, wherein the silicon boron nitride layer is a support layer and has a thickness of about 200 Å to about 600 Å, or about 400 Å.

[0085] 33. The method of any one of paragraphs 1 to 32, further comprising generating a plasma in a remote plasma system located outside the processing chamber; and transporting the plasma into the processing region while depositing a silicon boron nitride layer on the substrate.

[0086] 34. The silicon boron nitride layer comprises about 20 at% to about 35 at% boron, the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and the silicon boron nitride layer has a densitometric value of about 5×10 at 1.5 MV / cm. -11 A / cm 2 to approximately 9.9 x 10 -10 A / cm 2 34. The method of any one of clauses 1 to 33, having a leakage current of

[0087] 35. A silicon boron nitride layer or silicon boron nitride material produced, generated, deposited or otherwise formed by the method of any one of paragraphs 1 to 34.

[0088] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope thereof, the scope of which is determined by the following claims. All documents cited herein, including priority documents and / or testing procedures to the extent not inconsistent herewith, are incorporated by reference. As is apparent from the foregoing summary and specific embodiments, while forms of the disclosure have been illustrated and described, various modifications can be made without departing from the spirit and scope of the disclosure. Accordingly, no limitation of the disclosure is intended. Similarly, the term "comprising" is considered synonymous with the term "including" for purposes of U.S. law. Similarly, whenever a composition, element, or group of elements is followed by the transitional phrase "comprising," it is understood that the same composition or group of elements also is contemplated with the transitional phrase "consisting essentially of," "consisting of," "selected from the group of consisting of," or "is."

[0089] Certain embodiments and features have been described using a set of upper numerical limits and a set of lower numerical limits. Unless otherwise specified, it is understood that ranges including any combination of two values ​​are contemplated, e.g., any lower limit with any upper limit, any two lower limits, and / or any two upper limits. Certain lower limits, upper limits, and ranges are set forth in one or more of the following claims. The present application also includes the following aspects. (Aspect 1) 1. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; introducing a first flow of a first process gas and a second flow of a second process gas into the processing region, wherein: The first flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm; ammonia having a flow rate of about 10 sccm to about 5,000 sccm; helium having a flow rate of about 500 sccm to about 20,000 sccm; Nitrogen (N2) having a flow rate of about 5,000 sccm to about 25,000 sccm; argon having a flow rate of about 50 sccm to about 10,000 sccm, and Hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm and the second flow of the second process gas about 2 mole percent (mol %) to about 15 mole % diborane; about 85 mol % to about 98 mol % hydrogen (H), and Flow rates from approximately 1 sccm to approximately 5,000 sccm including, introducing; forming a plasma simultaneously with a first flow of the first process gas and a second flow of the second process gas into the processing region; and exposing the substrate to the first process gas, the second process gas, and a plasma to deposit a silicon boron nitride layer on the substrate; A method comprising: (Aspect 2) 2. The method of embodiment 1, wherein the silicon boron nitride layer comprises about 10 atomic percent (at %) to about 50 at % boron. (Aspect 3) 2. The method of embodiment 1, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5. (Aspect 4) 2. The method of embodiment 1, wherein the silicon boron nitride layer comprises about 5 at% to about 15 at% hydrogen. (Aspect 5) The silicon boron nitride layer has a resistivity of 1×10 at 1.5 MV / cm -9 A / cm 2 2. The method of embodiment 1, wherein the leakage current is less than (Aspect 6) The silicon boron nitride layer is about 60 at.% to about 80 at.% boron bonded to silicon; and Approximately 20 at% to approximately 40 at% boron bonded to nitrogen 2. The method of embodiment 1, comprising: (Aspect 7) 2. The method of claim 1, wherein a first flow of the first process gas and a second flow of the second process gas are combined to produce a third flow of a third process gas before being introduced into the processing region, and wherein the third flow of the third process gas is maintained at a temperature of from about 20° C. to less than 165° C. (Aspect 8) The first flow of the first process gas comprises: silane having a flow rate of about 10 sccm to about 250 sccm; ammonia having a flow rate of about 50 sccm to about 2,000 sccm; helium having a flow rate of about 750 sccm to about 15,000 sccm; nitrogen having a flow rate of about 10,000 sccm to about 20,000 sccm; argon having a flow rate of about 200 sccm to about 7,500 sccm, and Hydrogen having a flow rate of about 200 sccm to about 15,000 sccm 2. The method of embodiment 1, comprising: (Aspect 9) the second flow of the second process gas about 3 mol % to about 12 mol % diborane; about 88 mole % to about 97 mole % hydrogen, and Flow rates from approximately 5 sccm to approximately 2,000 sccm 2. The method of embodiment 1, comprising: (Aspect 10) 2. The method of claim 1, further comprising maintaining the processing region at a pressure of about 2 Torr to about 8 Torr, wherein the pedestal is positioned at a process distance between the pedestal and a showerhead of the processing chamber of about 200 mils to about 1,000 mils. (Aspect 11) 2. The method of claim 1, wherein the silicon boron nitride layer is located in a capacitor device disposed on the substrate, the silicon boron nitride layer being a support layer or stopper layer of the capacitor device, and the silicon boron nitride layer having a thickness of about 50 Å to about 800 Å. (Aspect 12) generating a plasma in a remote plasma system located outside the processing chamber; and transporting a plasma into the processing region while depositing the silicon boron nitride layer on the substrate; 2. The method of embodiment 1, further comprising: (Aspect 13) 1. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; introducing a first flow of a first process gas and a second flow of a second process gas into the processing region, wherein: the first flow of the first process gas comprises a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H), and at least two gases selected from the group consisting of argon, helium, nitrogen (N), and any combination thereof; and the second flow of the second process gas about 2 mole percent (mol %) to about 15 mole % diborane; about 85 mol % to about 98 mol % hydrogen (H), and Flow rates from approximately 1 sccm to approximately 5,000 sccm including, introducing; forming a plasma simultaneously with a first flow of the first process gas and a second flow of the second process gas into the processing region; and exposing the substrate to the first process gas, the second process gas, and a plasma to deposit a silicon boron nitride layer on the substrate; Including, the silicon boron nitride layer comprises about 10 atomic percent (at%) to about 50 at% boron; the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5; and The silicon boron nitride layer has a resistivity of 1.5 MV / cm and a resistivity of 1×10 -9 A / cm 2 have a leakage current of less than method. (Aspect 14) The silicon boron nitride layer comprises about 20 at% to about 35 at% boron, the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and the silicon boron nitride layer has a densitometric value of about 5×10 at 1.5 MV / cm. -11 A / cm 2 to approximately 9.9 x 10 -10 A / cm 2 14. The method of embodiment 13, wherein the leakage current is (Aspect 15) 1. A method of forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a processing region within a processing chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; maintaining said processing region at a pressure of about 2 Torr to about 8 Torr; introducing a first flow of a first process gas into the processing region, the first flow of the first process gas comprising: silane having a flow rate of about 1 sccm to about 500 sccm; ammonia having a flow rate of about 10 sccm to about 5,000 sccm; helium having a flow rate of about 500 sccm to about 20,000 sccm; Nitrogen (N2) having a flow rate of about 5,000 sccm to about 25,000 sccm; argon having a flow rate of about 50 sccm to about 10,000 sccm, and Hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm including, introducing; stopping the first flow of the first process gas; forming a plasma simultaneously with a second flow of a second process gas into the processing region, the second flow of the second process gas having a flow rate of about 1 sccm to about 5,000 sccm and comprising about 2 mole percent (mol%) to about 15 mole% diborane and about 85 mole% to about 98 mole% hydrogen (H); and forming a silicon boron nitride layer on said substrate; A method comprising:

Claims

1. A capacitor device, a stopper layer comprising silicon boron nitride disposed on the substrate, the silicon boron nitride comprising between about 18 atomic percent (at %) and about 50 at % boron; a dielectric layer disposed on the stopper layer; a via formed in the dielectric layer and the stopper layer; metal contacts disposed at the bottoms of the vias and acting as electrodes of the capacitor device, each via including one of the metal contacts; a nitride barrier layer comprising a metal nitride material disposed on a wall of the via and over the metal contact; an oxide layer disposed on the nitride barrier layer within the via, the oxide layer including one or more holes or voids formed therein; A capacitor device comprising:

2. a first support layer disposed above the stopper layer, a first portion of the dielectric layer being between the stopper layer and the first support layer, and the first support layer including the silicon boron nitride; The capacitor device of claim 1 .

3. 3. The capacitor device of claim 2, further comprising a second support layer disposed above the first support layer, a second portion of the dielectric layer being between the first support layer and the second support layer, and the second support layer comprising the silicon boron nitride.

4. 10. The capacitor device of claim 1, wherein the silicon boron nitride comprises about 20 at% to about 45 at% boron.

5. 10. The capacitor device of claim 1, wherein the silicon boron nitride comprises about 20 at% to about 35 at% boron.

6. 10. The capacitor device of claim 1, wherein the silicon boron nitride has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.

5.

7. ． 10. The capacitor device of claim 1, wherein the silicon boron nitride has an atomic ratio of nitrogen to silicon of about 1.1 to about 1.

4.

8. 10. The capacitor device of claim 1, wherein the silicon boron nitride comprises about 5 at% to about 15 at% hydrogen.

9. The silicon boron nitride has a resistivity of about 5×10 at 1.5 MV / cm －１１ A / cm ２ to approximately 9.9 x 10 －１０ A / cm ２ 10. The capacitor device of claim 1 having a leakage current of

10. The silicon boron nitride has a 1×10 －９ A / cm ２ 10. The capacitor device of claim 1 having a leakage current of less than 100 .mu.m.

11. The silicon boron nitride is about 60 at% to about 80 at% boron bonded to silicon; and 10. The capacitor device of claim 1 comprising about 20 at% to about 40 at% boron bonded to nitrogen.

12. 10. The capacitor device of claim 1, wherein the silicon boron nitride has a thickness of about 50 Å to about 800 Å.

13. 10. The capacitor device of claim 1, wherein the dielectric layer comprises amorphous silicon and the oxide layer comprises silicon oxide.

14. The capacitor device of claim 1 , wherein the metal nitride material comprises titanium nitride, tantalum nitride, tungsten nitride, silicides thereof, dopants thereof, or any combination thereof.

15. 10. The capacitor device of claim 1, wherein the metal contacts comprise copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof.

16. A capacitor device comprising: a stopper layer comprising silicon boron nitride and disposed on the substrate; a dielectric layer disposed on the stopper layer; a via formed in the dielectric layer and the stopper layer; metal contacts disposed at the bottoms of the vias and acting as electrodes of the capacitor device, each via including one of the metal contacts; a barrier layer disposed on the walls of the via and over the metal contact; an oxide layer disposed on the barrier layer within the via, the oxide layer including one or more holes or voids formed therein; a first support layer disposed above the stopper layer, with a first portion of the dielectric layer between the stopper layer and the first support layer; a second support layer disposed above the first support layer, with a second portion of the dielectric layer between the first support layer and the second support layer; and A capacitor device comprising:

17. 17. The capacitor device of claim 16, wherein each of the first support layer and the second support layer comprises the silicon boron nitride.

18. 17. The capacitor device of claim 16, wherein the silicon boron nitride comprises about 18 atomic percent (at%) to about 50 at% boron.

19. A capacitor device comprising: a stopper layer comprising silicon boron nitride disposed on the substrate, the stopper layer comprising about 18 atomic percent (at %) to about 50 at % boron; a dielectric layer disposed on the stopper layer; a via formed in the dielectric layer and the stopper layer; metal contacts disposed at the bottoms of the vias and acting as electrodes of the capacitor device, each via including one of the metal contacts; a barrier layer disposed on the walls of the via and over the metal contact; an oxide layer disposed on the barrier layer within the via, the oxide layer including one or more holes or voids formed therein; A capacitor device comprising:

20. The silicon boron nitride is about 20 at% to about 45 at% boron; about 5 at% to about 15 at% hydrogen; about 60 at% to about 80 at% boron bonded to silicon; about 20 at% to about 40 at% boron bonded to nitrogen; an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5; and Approximately 5 × 10 at 1.5 MV / cm －１１ A / cm ２ to approximately 9.9 x 10 －１０ A / cm ２ Leakage current of 20. The capacitor device of claim 19, having:

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