Liquid crystal display device

Abstract

To provide a display device with improved viewing angle characteristics, and to provide a display device with suppressed mixture of colors between adjacent pixels.SOLUTION: A display device includes a first coloring layer and a second coloring layer provided apart, and a structure body located between the coloring layers. A structure body has a portion located closer, in height, to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, and the like. , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The law can be cited as an example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to devices in general. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are types of semiconductor devices. In addition, it is also used in imaging devices, electro-optical devices, power generation devices (thin film solar cells, organic thin film solar cells) and the like), and electronic devices may include semiconductor devices. [Background technology]

[0004] Organic EL (Electro Luminescence) elements and liquid crystal elements are used. In addition, there are also other display devices such as light emitting diodes (LEDs). Light-emitting devices equipped with light-emitting elements such as LEDs, electrophoretic devices, etc. Electronic paper that displays information can also be cited as an example of a display device.

[0005] The basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light is emitted from the luminescent organic compound. A display device using such an organic EL element is thin, lightweight, and highly compact. A reliable and low-power consumption display device can be realized.

[0006] Patent Document 1 discloses a flexible light-emitting device that uses an organic EL element. . [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0008] One of the indicators of display device performance is the viewing angle characteristic. If the viewing angle characteristic is poor, When the display surface of the display device is viewed obliquely, a decrease in brightness and a change in chromaticity are visually recognized. Therefore, in applications where a wide viewing angle is required, improvements in the viewing angle characteristics of display devices are required. do.

[0009] In addition, there is a demand for higher resolution display devices, and therefore Compared to large devices such as home television sets, for example, portable In relatively small portable information terminal devices such as telephones, smartphones, and tablet terminals, the resolution To improve the accuracy, more fine detail is required.

[0010] An object of one embodiment of the present invention is to provide a display device with improved viewing angle characteristics. Another object is to provide a display device in which color mixing between adjacent pixels is suppressed. It is an object of the present invention to provide a display device with high definition. Another object of the present invention is to provide a display device that is easy to manufacture. Another object is to provide a display device with reduced power consumption. Another object is to provide a highly reliable display device.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. It is possible to extract this information from the detailed description, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a display device having a first colored layer, a second colored layer, and a structure. The first colored layer and the second colored layer are provided at a distance from each other. and the second colored layer, and the lower surface of the first colored layer or the lower surface of the second colored layer The display screen has a portion located closer to the display surface than the height of the display screen.

[0013] In the above, it is preferable that the thickness of the first colored layer is different from that of the second colored layer. It's nice.

[0014] The liquid crystal display device further includes a first electrode overlapping the first colored layer, and a first electrode and a first colored layer are disposed between the first electrode and the first colored layer. In this case, a light-emitting element is preferably provided between the first electrode and the second electrode. a layer containing a conductive material, and the distance between the second electrode and the first colored layer is 0 μm or more and 20 μm or less; It is preferable to have a region of m or less.

[0015] The structure further includes an insulating layer covering an end portion of the first electrode, and the structure is formed on the insulating layer. In this case, it is preferable that the second electrode has a portion that covers the upper surface of the structure. I wish.

[0016] The layer containing the light-emitting substance has a portion located between the structure and the second electrode. In addition, it is preferable that the angle between the side surface and the bottom surface of the structure is 25 degrees in the cross section. It is preferable that the angle has a portion that is equal to or greater than 155 degrees and equal to or less than 155 degrees.

[0017] The layer containing the light-emitting substance is located between the structure and the second electrode, and It is preferable that the thickness of the portion overlapping the electrode be thinner than that of the portion overlapping the electrode.

[0018] The display device according to one embodiment of the present invention further includes a third electrode overlapping with the first coloring layer. It is also possible to have a configuration in which liquid crystal is provided between the electrode and the first colored layer.

[0019] It is also preferable that a fourth electrode having a slit is provided between the third electrode and the liquid crystal. In this case, the distance between the fourth electrode and the first colored layer is in the range of 1 μm to 20 μm. It is preferred that the ion exchange region has a region.

[0020] Alternatively, a fifth electrode is provided between the third electrode and the first colored layer, and the liquid crystal is It is preferable that the second color layer is located between the third electrode and the first color layer. It is preferable that the distance between the adjacent regions is 1 μm or more and 20 μm or less. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a display device having improved viewing angle characteristics can be provided. It is possible to provide a display device in which color mixing between pixels is suppressed, or to provide a display device with high definition. Alternatively, a display device with a small thickness can be provided. Alternatively, a display device that is easy to manufacture can be provided. Alternatively, a display device with reduced power consumption can be provided. Alternatively, a display device with high reliability can be provided. A display device can be provided.

[0022] Note that one embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description, drawings, claims, etc. [Brief explanation of the drawings]

[0023] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Figure 2] 1 shows a configuration example of a display device according to an embodiment. [Figure 3] 1 shows a configuration example of a display device according to an embodiment. [Figure 4] 1 shows a configuration example of a display device according to an embodiment. [Figure 5] 1 shows a configuration example of a display device according to an embodiment. [Figure 6] 1 shows a configuration example of a display device according to an embodiment. [Figure 7] 1 shows a configuration example of a display device according to an embodiment. [Figure 8] 1 shows a configuration example of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 1 shows a configuration example of an input device according to an embodiment. [Figure 12] 1 shows a configuration example of an input device according to an embodiment. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a display device according to an embodiment. [Figure 15] 1 shows a configuration example of a display device according to an embodiment. [Figure 16] 1 shows a configuration example of a display device according to an embodiment. [Figure 17] 1 shows a configuration example of a display device according to an embodiment. [Figure 18] 1 shows a configuration example of a display device according to an embodiment. [Figure 19] 1A to 1C are diagrams illustrating an example of a method for driving an input device according to an embodiment. [Figure 20] 1 shows an example of the configuration of a transistor according to an embodiment. [Figure 21] 1 shows an example of the configuration of a transistor according to an embodiment. [Figure 22] 1 shows an example of the configuration of a transistor according to an embodiment. [Figure 23] 1A to 1C are diagrams illustrating a display module according to an embodiment. [Figure 24] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 25] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 26] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 27] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 28] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 29] 10 is a cross-sectional observation image according to an example. [Figure 30] FIG. 10 is a diagram illustrating the measurement results of the XRD spectrum of a sample. [Figure 31] TEM image of the sample and a diagram explaining the electron beam diffraction pattern. [Figure 32] FIG. 1 is a diagram illustrating EDX mapping of a sample. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0026] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0027] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0028] (Embodiment 1) In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0029] A display device according to one embodiment of the present invention includes a plurality of pixels. Each pixel includes a display element and The display element has a coloring layer that colors the light emitted from the display element. The electrode and the colored layer can be provided facing each other. The colored layers are arranged at intervals.

[0030] In addition, the pixel has a structure located between the two colored layers between adjacent pixels. can be placed between two pixels, each corresponding to a different color, for example.

[0031] The display device has a configuration in which a display element, a color layer, and a structure are sandwiched between a pair of substrates, for example. For example, one substrate may be provided with electrodes for a display element, and the other substrate may be provided with The colored layer or the like may be provided, and these may be bonded together with an adhesive layer or the like. Here, the structure may be formed on either substrate side.

[0032] The structure functions as a spacer to prevent the pair of substrates from getting closer than necessary. The structure may also have a function of suppressing color mixing between adjacent pixels. For example, when EL elements are used as display elements, the leakage current between adjacent EL elements can be suppressed. The structure may have a function of suppressing color mixing between adjacent pixels by controlling the color temperature.

[0033] In addition, a part of the structure is located above the surface (lower surface) of the colored layer on the display element side, i.e., In other words, it is preferable that the two colored layers are positioned on the side of each other. It is preferable that the structure is disposed so as to fit between the colored layer and the It is not necessary for the structure to be in contact with the substrate, and a space or adhesive layer may be present between them. stomach.

[0034] By adopting such a configuration, the distance between the pair of substrates can be made extremely small. The distance between the display element and the colored layer, more specifically, the distance between at least one of a pair of electrodes of the display element This allows the distance between the colored layer and the other layer to be as close as possible. In addition, the light emitted from the display element in an oblique direction can also be Because it can be extracted efficiently, power consumption can also be reduced. A display device can be realized.

[0035] The display elements include LEDs and OLEDs (Organic Light Emitting Diodes). g Diode), or QLED (Quantum-dot Light Emitt light-emitting elements such as LEDs, and optical elements such as liquid crystal elements, which are By using an element in which the brightness of the light emitted by the element or the light emitted through the element can be controlled, This can be done.

[0036] In addition, MEMS (Micro Electro Mechanical Systems) are also used as display elements. ical Systems), electron-emitting devices, and other optical elements. As display elements using MEMS, there are shutter-type MEMS display elements, Examples include MEMS display elements that use optical interference. Other optical elements include a microcapsule type and an electrophotographic type. The electrophoresis method, electrowetting method, electronic liquid powder method, etc. are applied. The element can be used.

[0037] A more specific configuration example will be described below with reference to the drawings.

[0038] [Configuration example 1] FIG. 1(A) is a perspective schematic diagram of a display device 10 according to one embodiment of the present invention. The substrate 21 and the substrate 31 are bonded together. In FIG. 1(A), the substrate 31 is shown by a dashed line. It is clearly stated in.

[0039] The display device 10 includes a display unit 32, a circuit 34, wiring 35, etc. The substrate 21 is provided with, for example, The circuit 34, the wiring 35, and the conductive layer 23 included in the display portion 32 and functioning as a pixel electrode are In addition, in FIG. 1(A), an example in which an IC 43 and an FPC 42 are mounted on a substrate 21 is shown. This shows:

[0040] The circuit 34 can be, for example, a circuit that functions as a scanning line driver circuit.

[0041] The wiring 35 has a function of supplying signals and power to the display unit 32 and the circuit 34. Power is input to the wiring 35 from the outside via the FPC 42 or from the IC 43 .

[0042] In addition, in FIG. 1(A), the substrate 2 is formed by a COG (Chip On Glass) method or the like. 1, an example in which an IC 43 is provided. The IC 43 may be, for example, a scanning line driving circuit or Alternatively, an IC having a function as a signal line driver circuit or the like can be applied. In some cases, a circuit that functions as a scanning line driver circuit and a signal line driver circuit is provided, and in other cases, a circuit that functions as a scanning line driver circuit and a signal line driver circuit is provided. A circuit that functions as a signal line driving circuit is provided externally, and drives the display device 10 via the FPC 42. In cases where a signal for operating the device is input, the IC 43 may not be provided. The IC43 is mounted on the FPC42 using the COF (Chip On Film) method or the like. That's fine.

[0043] FIG. 1A shows an enlarged view of a part of the display unit 32. The display unit 32 has a plurality of displays. The conductive layer 23 of the display element is arranged in a matrix. The structure 11 is disposed between two adjacent conductive layers 23. Here, the structure 11 is made up of two conductive layers 23 of two pixels corresponding to different colors. It is preferable that the structure 11 is disposed between two pixels corresponding to the same color. The conductive layer 23 may be disposed between the conductive layer 23 having the same structure.

[0044] [Cross-section example 1] [Cross-sectional configuration example 1-1] FIG. 1(B) shows an example of a cross section corresponding to the cutting line A1-A2 in FIG. 1(A). B) shows a cross section of an area including two adjacent pixels (sub-pixels). 1 shows an example in which a light emitting element 40 having a top emission structure is used as a display element. Therefore, the substrate 31 side is the display surface side.

[0045] The display device 10 has a structure in which a substrate 21 and a substrate 31 are bonded together with an adhesive layer 39. It can be said that the light emitting element 40 is sealed by the adhesive layer 39.

[0046] On the substrate 21, a transistor 70, a light emitting element 40, a structure 11, etc. are provided. Furthermore, insulating layers 73, 81, 82, etc. are provided on the substrate 21. The surface of the substrate 31 facing the substrate 21 is provided with a colored layer 51a, a colored layer 51b, and a light-shielding layer 52. etc. are provided.

[0047] The colored layer 51a and the colored layer 51b are provided at a distance from each other. It is provided between the color layer 51a and the colored layer 51b. The optical layer 52 and the colored layer 51a are preferably arranged so that they partially overlap each other. The same applies to the light-shielding layer 52 and the colored layer 51b.

[0048] The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer the insulating layer 73 serving as a source or a drain; the conductive layer 74a serving as a source or a drain; The conductive layer 74b functions as the other of the source and the drain.

[0049] An insulating layer 81 is provided to cover the transistor 70. A conductive layer 2 is formed on the insulating layer 81. The conductive layer 23 and the conductive layer 74b are connected to each other through an opening provided in the insulating layer 81. A part of the conductive layer 23 functions as a pixel electrode.

[0050] An insulating layer 82 is provided to cover the end of the conductive layer 23. The insulating layer 82 has a tapered shape. It is preferable that

[0051] The structure 11 is provided on the insulating layer 82. The structure 11 is The structure 11 is located between two adjacent light emitting elements 40 in a plan view. The structure 1 has a portion located between the colored layers (the colored layer 51a and the colored layer 51b). 1 is preferably disposed so as to overlap a part of the light-shielding layer 52 in a plan view.

[0052] An EL layer 24 and a conductive layer 25 are provided on the conductive layer 23, forming a light-emitting element 40. A part of the conductive layer 25 functions as a common electrode for the light emitting element 40. The light emitting element 40 includes: A potential difference is generated between the conductive layer 23 and the conductive layer 25, and a current is passed through the EL layer 24, causing the layer to emit light. do.

[0053] FIG. 1B shows an example in which the EL layer 24 and the conductive layer 25 are formed over a plurality of pixels. The EL layer 24 includes the insulating layer 82 and the structure other than the exposed portion of the conductive layer 23. The conductive layer 25 is provided to cover the EL layer 24. .

[0054] In FIG. 1B, the structure 11 is formed on the light emitting element 40 side of the colored layer 51a and the colored layer 51b. The colored layer 51a and the colored layer 51b have a portion located above the surface (lower surface) of the colored layer 51a. The structure 11 can be arranged so as to fit between the first and second electrodes 1b. The colored layer 51a, the colored layer 51b, or the light-shielding layer 52 and the structure 11 (or the structure 11 covering The surface of the conductive layer 25 formed by the above-mentioned method is not necessarily in contact with the surface of the conductive layer 25 formed by the above-mentioned method. ) an adhesive layer 39 may be provided between them.

[0055] By adopting such a configuration, the distance between the substrate 21 and the substrate 31 can be made extremely small. When light from the light emitting element 40 is emitted through the opening of the light blocking layer 52, The closer the distance between 52 and the light emitting element 40, the wider the angle at which light can be emitted. Therefore, a display device with improved viewing angle characteristics can be realized.

[0056] In addition, the distance between the light emitting element 40 and the colored layer 51a can be made extremely short. Therefore, most of the light emitted from the light emitting element 40 toward the display surface is incident on the colored layer 51a. At this time, the light emitting element 40 transmits light to the colored layer of the adjacent pixel (for example, the colored layer 51b). When light is emitted obliquely toward the object, the light is first identified by the colored layer 51a. Since light of colors other than the above color is absorbed, it is not emitted to the outside through the colored layer 51b. This significantly reduces color mixing between adjacent pixels, and reduces the chromaticity when the display surface is viewed from an oblique direction. Changes can be suppressed.

[0057] For comparison, in FIG. 2(A), colored layers are arranged overlappingly between two adjacent pixels. 2A shows an example in which color mixing between adjacent pixels is suppressed. In addition to the colored layer 51b, a part of the colored layer 51c is also clearly shown. In A), the structure 11 is not provided and the distance between the substrate 31 and the substrate 21 is reduced. It shows.

[0058] In the configuration shown in FIGS. 2(A) and 2(B), an overlapping portion of two colored layers is provided between adjacent pixels. However, by doing so, it is possible to suppress color mixing between adjacent pixels. The distance 1 is limited by the thickness of the overlapping part of the two colored layers, and in the case of a structure where the colored layers do not overlap, On the other hand, it is difficult to make the distance between the substrates sufficiently small compared to the conventional structure shown in Figure 1(B). In this configuration, the colored layers are spaced apart, and the structure 11 is disposed so as to fit between them. This suppresses color mixing, so the distance between the substrates can be made extremely small. Therefore, compared with the configurations illustrated in FIGS. 2(A) and (B), the configuration illustrated in FIG. 1(B) has a diagonal This effectively reduces the change in luminance when viewed from the front.

[0059] The structure 11 is a spacer that prevents the substrate 21 and the substrate 31 from getting closer than necessary. Therefore, the surface of the structure 11 or the structure 11 may have a function as a catalyst. The surface of the covering layer (such as the conductive layer 25) is in contact with the structure provided on the substrate 31, such as the light-shielding layer 52. It may be possible.

[0060] Furthermore, the structure 11 may have a function of absorbing at least a part of visible light. As a result, the amount of light emitted obliquely through the structure 11 toward the colored layer of the adjacent pixel is This allows for more effective suppression of color mixing between adjacent pixels. The same material as that of the colored layer 51a or the colored layer 51b and the light-shielding layer 52 may be used for the light-shielding layer 51.

[0061] In this example, the display device 10 is an active device having a transistor 70 or the like as an active element. The following will be explained in the case of a passive matrix type display device, but the passive matrix type does not have active elements. In this case, the transistor 70 is not provided, and for example, For example, the elements located between the conductive layer 23 and the substrate 21 may be omitted.

[0062] FIG. 3(A) shows an enlarged view of the area surrounded by the dashed line in FIG. 1(B).

[0063] As shown in FIG. 3(A), the height of the highest (thickest) part of the structure 11 is defined as height h1. The height of the lowest part of the lower surface of the colored layer 51a is defined as height h2. The height of the highest part of the conductive layer 25 is defined as height h3. The height of the portion is defined as height h4. The height h4 can be rephrased as the height of the surface on which the colored layer 51a is formed. The height of the upper surface of the conductive layer 23 is defined as height h5. The height of the upper surface of the conductive layer 25 at a certain portion is defined as height h6. For example, it can be rephrased as the distance from the surface of the substrate 21.

[0064] Here, as shown in FIG. 3(A), the height h1 of the structures 11 is the height of the lower surface of the colored layer 51a. The structure 11 is formed so that the height is higher than the height h2. Similarly, the conductive layer 25 is formed so that the height h3 of the upper surface of the layer 25 is higher than the height h2. Here, part of the upper surface of the conductive layer 25 and part of the lower surface of the light-shielding layer 52 may be in contact with each other.

[0065] Between the upper surface of the conductive layer 25 and the lower surface of the colored layer 51a in the direction perpendicular to the surface of the substrate 21 Let the distance be distance d1. That is, distance d1 is equal to height h2 minus height h6. The smaller the distance d1, the more the color mixing between adjacent pixels can be reduced. d1 is, for example, 0 μm or more and 20 μm or less, preferably 0 μm or more and 10 μm or less, and more preferably When the distance d1 is 0 μm, the conductive layer 25 This means that the colored layer 51a is in contact with the colored layer 51b.

[0066] In addition, the upper surface of the conductive layer 25 and the area where the colored layer 51a is to be formed in the direction perpendicular to the surface of the substrate 21 are The distance between the surfaces is distance d2. In other words, distance d2 is the value obtained by subtracting height h6 from height h4. and is equal to the sum of the distance d1 and the thickness of the colored layer 51a. For example, it is possible to suppress a decrease in brightness when the display surface is viewed from an oblique direction. The thickness is, for example, 100 nm or more and 5 μm or less, preferably 200 nm or more and 4 μm or less, more preferably 200 nm or more and 4 μm or less. More preferably, it is 500 nm or more and 3 μm or less.

[0067] Here, when we say that the distance between A and B is greater than or equal to x and less than or equal to y, within the observed range, A It is sufficient that the distance between A and B is in the range of x or more and y or less.

[0068] Between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a in the direction perpendicular to the surface of the substrate 21 Let the distance be distance d3. That is, distance d3 is equal to the value obtained by subtracting height h5 from height h2. , and is equal to the sum of the distance d1 and the thickness of each of the EL layer 24 and the conductive layer 25. When an optical adjustment layer is provided to realize a cavity structure, the thickness of the optical adjustment layer is included in the thickness of the EL layer 24. The smaller the distance d3, the less color mixing occurs between adjacent pixels. The thickness of the EL layer 24 can be adjusted depending on the configuration and manufacturing method of the light emitting element 40. The thickness may be set to an optimum value, for example, 20 nm or more and 1 μm or less. The thickness of the conductive layer 25 may be optimized depending on the material and the required resistance value. However, the thickness can be set to, for example, 0.3 nm or more and 1 μm or less.

[0069] The distance d3 between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a is, for example, 20 nm or more and 22 μm or less. m or less, preferably 20 nm or more and 20 μm or less, more preferably 20 nm or more and 10 μm or less The thickness can be set to 20 nm or less and more preferably 5 μm or less.

[0070] In addition, in the direction perpendicular to the surface of the substrate 21, the upper surface of the conductive layer 23 and the area where the colored layer 51a is to be formed are The distance between the surfaces is distance d4. In other words, distance d4 is the value obtained by subtracting height h5 from height h4. and is equal to the sum of the distance d3 and the thickness of the colored layer 51a. For example, it is possible to suppress a decrease in brightness when the display surface is viewed from an oblique direction.

[0071] Next, the shape of the structure 11 will be described. As shown in FIG. 3(A), the structure 11 The taper angle of the structure 11 is defined as the taper angle θ. The taper angle is the angle between the bottom surface (the surface that contacts the surface to be formed) and the side surface. The taper angle is greater than 90 degrees and less than 180 degrees. If it is greater than 90 degrees, it is sometimes called a reverse taper.

[0072] The taper angle θ of the structure 11 is 25 degrees or more and 155 degrees or less, preferably 30 degrees or more and 150 degrees or less. It is more preferable to set the angle between 35 degrees and 145 degrees.

[0073] Here, as shown in FIG. 1(B) and FIG. 3(A), the EL layer 24 is formed over a plurality of pixels. In this case, if the EL layer 24 has a highly conductive layer, the adjacent pixel may be connected via the highly conductive layer. In some cases, a current may flow to the elemental light-emitting element 40. Alternatively, the EL layer 24 may have a donor property. The same is true for layers containing both emitting and accepting materials. The light emitting element 40 of the adjacent pixel that does not emit light may cause a decrease in color reproducibility. This phenomenon can also be called crosstalk.

[0074] By setting the taper angle θ of the structure 11 in the above range, the E The L layer 24 can be partially thinned. The portion covering the side surface is formed thinner than the portion covering the top surface of the structure 11 and the portion on the conductive layer 23. In particular, when the structure 11 has an inverse tapered shape, it is possible to divide the EL layer 24. By providing such a structure 11, the EL layer 24 can have high conductivity. Even if the layer has a layer containing both donor and acceptor materials, This can reduce the current that flows to adjacent pixels through the layer, thereby suppressing crosstalk. It is possible.

[0075] 3B, 3C, and 3D show the structure 11 and the EL element provided to cover the structure 11. An example cross section of layer 24 and conductive layer 25 is shown.

[0076] The structure 11 shown in FIG. 3B has a forward tapered structure, and the end of the structure 11 of the EL layer 24 This shows how the covering part is thinning.

[0077] The structure 11 shown in FIG. 3C has an inverse tapered shape, and the end of the structure 11 of the EL layer 24 This shows how the covering part is thinning.

[0078] In FIG. 3D, the end of the structure 11 has a continuous curvature, and the structure 11 of the EL layer 24 As shown in FIG. 3(D), the portion covering the edge is thinned. When the end of the structure 11 has a continuous curvature, the side of the structure 11 is The larger angle with respect to the bottom surface can be regarded as the taper angle θ of the structure 11.

[0079] Depending on the materials used for the insulating layer 82 and the structure 11, the cross-sectional observation of these may In addition, if the insulating layer 82 and the structure 11 are made of the same material, it may be difficult to distinguish the boundary. When using a half-tone mask or a gray-tone mask, or when using a multi-layer mask, When the insulating layer 82 and the structure 11 are formed from the same film using a double exposure technique, In some cases, these boundaries do not actually exist. In such cases, the upper part is not formed as a protruding part. The remaining portion can be regarded as the insulating layer 82. As an example, an example in which there is no interface between the insulating layer 82 and the structure 11 is shown. Examples of lines that can be considered boundaries are shown as dashed lines.

[0080] In addition, when the structure 11 has an inverse tapered shape, as shown in FIG. 3(E), The EL layer 24 may be divided near the side surface of the structure 11. The conductive layer 25 may be thinned near the side surface of the structure 11, but is formed without being divided. As a result, the EL layer 24 is exposed even near the side surfaces of the structure 11. Since the conductive layer 25 can cover the surface of the wiring layer 21 without causing any damage, reliability can be improved. .

[0081] The above is the description of the cross-sectional configuration example 1-1.

[0082] An example in which the configuration is partially different from the above-described cross-sectional configuration example 1-1 will be described below.

[0083] [Cross-sectional configuration example 1-2] In FIG. 4(A), the thickness of the colored layer 51b is thinner than that of the colored layer 51a, as compared with FIG. 1(B). An example of the case is shown.

[0084] The lower surface of the colored layer 51a is located lower than the upper surface of the structure 11, and the lower surface of the colored layer 51b is located The colored layer is located higher than the upper surface of the structure 11. In this way, the thickness of the colored layer varies depending on the pixel. In this case, the structure 11 has a portion located above the lower surface of at least one colored layer. It is enough if you have it.

[0085] [Cross-sectional configuration example 1-3] FIG. 4(B) shows an example in which the EL layer 24 is formed for each pixel, as compared with FIG. 1(B). In the configuration shown in FIG. 4B, an EL layer 24a is provided in the portion overlapping with the colored layer 51a. The EL layer 24a and the EL layer 24b are provided in the area where they overlap with the colored layer 51b. The layer 24b includes layers containing luminescent materials that emit light of different colors. The conductive layer 25 is provided across adjacent pixels, and a part of it covers the structure 11. The EL layer 24a and the EL layer 24b are formed without being separated between adjacent pixels of the same color. It may be configured as follows.

[0086] In this way, even when separate EL layers are created, the inclusion of a colored layer makes it extremely A display device with improved color reproducibility can be obtained.

[0087] At this time, the structure 11 is also formed by the matrix material used in forming the EL layer 24a and the EL layer 24b. The metal mask is formed on the surface of the EL layer 24a or EL layer 24b to prevent the metal mask from coming into contact with the surface on which the EL layer 24a or EL layer 24b is to be formed. It may also have a function as a spacer.

[0088] [Cross-sectional configuration example 1-4] FIG. 4C shows an example in which the EL layer 24 and the conductive layer 25 are formed separately for each pixel. do.

[0089] Here, in FIG. 4(C), the structure 11 has a liquid-repellent portion 11a on its surface. This shows an example in which the EL layer 24 and the conductive layer 25 are formed by an ink jet method or a dispenser. When a method using a liquid material such as a printing method or screen printing is used, Prevents the materials of the EL layer 24 and the conductive layer 25 from spreading beyond the structure 11 to adjacent pixels. As a result, as shown in FIG. 4(C), the EL layer 24 and the conductive layer 25 are formed into two structures. It is provided so as to be located inside the body 11.

[0090] Here, an example in which both the EL layer 24 and the conductive layer 25 are formed separately for each pixel has been shown. The conductive layer 25 may be formed across adjacent pixels by evaporation or sputtering. .

[0091] The EL layer 24 may be formed without being divided between adjacent pixels of the same color. The conductive layer 25 is formed without being divided between adjacent pixels in the depth direction of FIG. 4(C). It is preferable that

[0092] [Cross-sectional configuration example 1-5] FIG. 5A shows an example in which the conductive layer 25 on the structure 11 is in contact with the light-shielding layer 52. In the display section 32, a part of the conductive layer 25 may be in contact with the light-shielding layer 52, or the display They may be in contact with each other over the entire area of ​​the display unit 32. If the distance between the substrate 31 and the substrate 21 is not easily varied, the display unevenness can be reduced. do.

[0093] [Cross-sectional configuration example 1-6] FIG. 5B shows an example in which the light-shielding layer 52 is provided to cover the end portion of the colored layer 51a. With this configuration, the light passing through the colored layer 51a and traveling toward the adjacent pixel can be effectively suppressed.

[0094] [Cross-sectional configuration example 1-7] FIG. 5C shows a semiconductor device in which a part of a single crystal substrate 91 is used as a semiconductor layer instead of the transistor 70. An example in which a transistor 90 is applied is shown.

[0095] The transistor 90 shown in FIG. 5C has a channel region 92, a source region, or a drain region. a low resistance region 94a functioning as the other of the source and drain; 94b, an insulating layer 73 functioning as a gate insulating layer, a conductive layer 71 functioning as a gate, etc. The channel region 92, the low resistance region 94a, and the low resistance region 94b are formed on a single crystal substrate. The single crystal substrate 91 is provided with a separation layer 97 for separating the elements. It is being used.

[0096] In addition, insulating layers 81a, 81b, and 81c are provided to cover the transistor 90. In addition, a conductive layer 96 is provided on the insulating layer 81a, and the conductive layer 96 and the low resistance region 94a are connected to each other. The insulating layer 81a is connected to the low resistance region 94b via a connection layer 95a embedded in the insulating layer 81a. Furthermore, the conductive layer 23 is provided on the insulating layer 81c, and the conductive layer 23 and the conductive layer 96 are connected to each other by the insulating layer 81c. The conductive layer 96 is connected to the insulating layer 81b via a connecting layer 95b embedded in the insulating layer 81b. The surfaces of the electrodes are planarized.

[0097] By adopting such a configuration, extremely fine pixels can be formed on the single crystal substrate 91. This makes it possible to realize a high-definition display device.

[0098] [Cross-sectional configuration example 1-8] FIG. 6(A) shows an example in which the structure 11 is provided on the substrate 31 side.

[0099] The structure 11 shown in FIG. 6(A) has a lower surface that is at a height equal to the height of the colored layer 51a and the colored layer 51b. It is provided so as to be located closer to the substrate 31 than the height of the lower surface.

[0100] The colored layer 51a and the colored layer 51b are positioned inside the opening of the insulating layer 82. In this way, the colored layer 51a and the colored layer 51b are preferably provided on the light-emitting layer 51b. The distance to the element 40 can be made smaller.

[0101] The structure 11 is provided at a position overlapping the insulating layer 82. 25 may be in contact with each other, or an adhesive layer 39 may be located between them.

[0102] [Cross-sectional configuration example 1-9] FIG. 6(B) shows an example in which the EL layer 24 is formed for each pixel, in comparison with FIG. 6(A). The EL layer 24a is provided overlapping the colored layer 51a, and the EL layer 24b is provided overlapping the colored layer 51b. The conductive layer 25 is provided over the adjacent pixels.

[0103] 6B, in the region overlapping with the insulating layer 82, a part of the structure 11 and the conductive layer 2 This shows an example where parts of 5 are in contact.

[0104] [Cross-sectional configuration example 1-10] FIG. 6C shows an example in which the EL layer 24 and the conductive layer 25 are formed separately for each pixel. do.

[0105] In this case, the insulating layer 82 has a liquid-repellent portion 82a on its surface, and the EL layer 24a, An example in which the EL layer 24b and the conductive layer 25 are located inside the opening of the insulating layer 82 is shown. There are.

[0106] FIG. 6C shows an example in which a part of the structure 11 and a part of the insulating layer 82 are provided in contact with each other. This shows:

[0107] [Cross-sectional configuration example 1-11] FIG. 7A shows an example in which a liquid crystal element 60 is used as a display element. The liquid crystal element 60 shown in FIG. 7A includes a conductive layer 61, a liquid crystal 62, and a conductive layer 63. is a transmissive liquid crystal element that uses the VA (Vertical Alignment) mode. He is a child.

[0108] The conductive layer 61 is provided on the insulating layer 81. The conductive layer 61 is connected to the insulating layer 81 through an opening. The conductive layer 74a is electrically connected to the conductive layer 74a of the transistor 70.

[0109] On the substrate 31 side, the insulating layer 6 is formed to cover the colored layer 51a, the colored layer 51b, and the light-shielding layer 52. The insulating layer 64 is included in the colored layer 51a, the colored layer 51b, or the light-shielding layer 52. The film may have a function of suppressing impurities contained therein from diffusing into the liquid crystal 62.

[0110] The conductive layer 63 is provided to cover the insulating layer 64. The liquid crystal element 60 is formed by the conductive layer 61 and the conductive The liquid crystal display device has a structure in which a liquid crystal 62 is sandwiched between layers 63 of electrodes.

[0111] Here, the insulating layer 64 is disposed between the colored layers 51a and 51b, and its upper surface is in contact with the colored layers 51a and 51b. It is preferable that the portion be located above the lower surface of the insulating film 1a (on the substrate 31 side). The surface of the insulating layer 64 has a recessed portion in the region between the colored layer 51a and the colored layer 51b. In addition, the structure 11 arranged on the substrate 21 side is fitted into the recess of the insulating layer 64. With this configuration, the structure 11 arranged on the substrate 21 side , can be arranged so as to fit between two adjacent colored layers. The distance between the substrate 21 and the substrate 31 can be made smaller than when the surface of the layer 64 is flat. This makes it possible to improve the viewing angle characteristics.

[0112] The structure 11 functions as a spacer to maintain a predetermined distance between the substrate 21 and the substrate 31. The structure 11 allows the distance between the conductive layer 61 and the conductive layer 63 in the liquid crystal element 60 to be optimized. The distance can be controlled.

[0113] Although not shown here, the conductive layer 61 and the liquid crystal 62, and the conductive layer 63 and the liquid crystal 62 An alignment film for controlling the alignment of the liquid crystal 62 may be provided between them.

[0114] Here, the distance between the upper surface of the conductive layer 61 and the lower surface of the colored layer 51a or the like is This distance corresponds to the distance d3. If this distance is optimized depending on the configuration of the liquid crystal element 60, For example, the thickness is 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more preferably Preferably, it can be set to 2 μm or more and 5 μm or less.

[0115] [Cross-sectional configuration example 1-12] In Figure 7(B), the display element is FFS (Fringe Field Switching) 1 shows an example in which a liquid crystal element 60 in the LD mode is used. The conductive layer 61 and the conductive layer 63 are both provided on the substrate 21 side.

[0116] A conductive layer 61 is provided on an insulating layer 81, and an insulating layer 65 is provided to cover the conductive layer 61. Furthermore, a conductive layer 63 is provided on the insulating layer 65. The conductive layer 63 has a comb-like upper surface. or has an upper surface shape with one or more openings (slits).

[0117] The conductive layer 61 is electrically connected to the transistor 70 and functions as a pixel electrode. The conductive layer 63 provided on the conductive layer 61 via the edge layer 65 functions as a common electrode. The conductive layer 63 is connected to the transistor 70 through openings provided in the insulating layer 65 and the insulating layer 81. The conductive layer 74a may be electrically connected to the conductive layer 74b to function as a pixel electrode. 61 can be provided across adjacent pixels and used as a common electrode.

[0118] In FIGS. 7A and 7B, a material that transmits visible light is used for the conductive layer 61. In addition, both the conductive layer 61 and the conductive layer 63 may be formed to transmit visible light. It is preferable to use a conductive material that is transparent to the substrate, since this can further increase the aperture ratio.

[0119] In the case of a reflective liquid crystal element, either the conductive layer 61 or the conductive layer 63, or For both of these, a material that reflects visible light can be used. The aperture ratio can be increased by using the conductive layer 61 or the conductive layer 63. A material that reflects light may be used on the one hand, and a material that transmits visible light on the other hand.

[0120] Alternatively, a material that reflects visible light may be used for the conductive layer 61, and a material that transmits visible light may be used for the conductive layer 63. In this case, the conductive layer 61 may be used to form a semi-transmissive liquid crystal element. a reflection mode using reflected light and a back mode using transmitted light through a slit provided in the conductive layer 61. You can switch between a transparent mode that uses light from the light source and a transparent mode.

[0121] Although not shown in FIGS. 7A and 7B, a barrier is provided on the outside of the substrate 21 or the outside of the substrate 31. In addition, a backlight can be placed on the outside of the substrate 21 and the outside of the substrate 31. A polarizer can be provided.

[0122] Here, the distance between the upper surface of the conductive layer 63 and the lower surface of the colored layer 51a or the like is This distance corresponds to the distance d3. If this distance is optimized depending on the configuration of the liquid crystal element 60, For example, the thickness is 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more preferably Preferably, it can be set to 2 μm or more and 5 μm or less.

[0123] [Example of structure placement] 8(A) to 8(F) are enlarged views of a part of the display unit 32 as viewed from the display surface side. In this example, a light-shielding layer 52 is provided on the side closest to the display surface, and colored layers 51a, 51b, and A colored layer 51c is provided, and a conductive layer 23 and a structure 11 are provided below the colored layer 51c. The structural body 11, the conductive layer 23, etc. are indicated by dashed lines.

[0124] 8A to 8D, the colored layer 51a, the colored layer 51b, the colored layer 51c, and the shielding layer 51b are shown. The light-shielding layer 52 and each colored layer 52 are arranged in a stripe pattern. The layers have overlapping portions.

[0125] FIG. 8A shows an example in which an island-shaped structure 11 is disposed between two conductive layers 23. The structure 11 is disposed so as to overlap the light-shielding layer 52.

[0126] 8A shows an example in which the structure 11 is longer than the longitudinal length of the conductive layer 23. 8B is an example in which the structure 11 is shorter than the longitudinal length of the conductive layer 23. FIG. 8(D) shows an example in which the structures 11 have a dot-like shape. 11 is arranged in a stripe pattern similar to the light-shielding layer 52 and the like.

[0127] 8(E) and (F) show an example in which the light-shielding layer 52 has a lattice shape. Here, the colored layer 51a, the colored layer 51b, and the colored layer 51c overlap with the conductive layer 23. The pores have an island-like shape.

[0128] In FIG. 8(E), island-shaped structures 11 are provided along the four sides of the conductive layer 23. FIG. 8(F) shows an example in which the structures 11 have a lattice shape. This shows:

[0129] The shape and arrangement of the structures 11 are not limited to those described above, and may be formed between two adjacent colored layers. The sensor can be positioned so that it is positioned at the

[0130] [Cross-section example 2] An example of a more detailed cross-sectional configuration of the display device 10 according to one embodiment of the present invention will be described below. Here, we will explain the case where a top-emission type light-emitting element is used as the display element. Reveal.

[0131] [Cross-sectional configuration example 2-1] 9 is a schematic cross-sectional view of the display device 10. In FIG. 9, the FPC 42 in FIG. 3 shows an example of a cross section of a region including the circuit 34, a region including the display unit 32, etc. 9 also shows a cross section of the display section 32 including a region including transistors and the like, and a region between adjacent pixels. The cross sections of the area are shown side by side.

[0132] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A part of the substrate 31 functions to seal the light emitting element 40. The outer surface of the substrate 31 is provided with a polarizing plate. It is preferred to have 130.

[0133] The substrate 21 is provided with a light emitting element 40, a transistor 201, a transistor 202, and a transistor The capacitor 205, the capacitor element 203, the terminal portion 204, the wiring 35, the structure 11, and the like are provided. Further, on the substrate 31 side, a colored layer 131a, a colored layer 131b, a light-shielding layer 132, etc. are provided. The light emitting element 40 has a structure in which a conductive layer 111, an EL layer 112, and a conductive layer 113 are stacked. A part of the conductive layer 111 functions as a pixel electrode, and a part of the conductive layer 113 functions as a common electrode. The light emitting element 40 is a top emission type light emitting element that emits light toward the substrate 31 side. It is an optical element.

[0134] 9 shows a cross section including one sub-pixel as an example of the display unit 32. The element includes a transistor 202, a capacitor 203, a transistor 205, and a light-emitting element 40. For example, the transistor 202 is a switching transistor. The transistor 205 is a selection transistor, and controls the current flowing through the light emitting element 40. This is a transistor (drive transistor) that controls the

[0135] FIG. 9 also shows a cross section including a transistor 201 as an example of the circuit 34.

[0136] The colored layers 131a and 131b can be made of materials that transmit different colors. By arranging sub-pixels that exhibit red, sub-pixels that exhibit green, and sub-pixels that exhibit blue, It is possible to display the image in full color.

[0137] On the substrate 21, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, an insulating layer The insulating layer 211 is provided with insulating layers such as 215 and 216. The other part functions as a dielectric for the capacitor element 203. The insulating layer 212, the insulating layer 213, and the insulating layer 214 are insulating layers for the transistors and the capacitor 203. The insulating layer 214 functions as a planarization layer. In this example, insulating layers 212, 213, and 214 are used as insulating layers for covering transistors and the like. However, the present invention is not limited to this and may have four or more layers. Alternatively, the insulating layer 214, which functions as a planarizing layer, may be omitted if not necessary. The insulating layer 215 is provided to cover the conductive layer 224. The insulating layer 216 may have a function as a planarizing layer. , which is provided to cover the contact portion that electrically connects the conductive layer 111 and the conductive layer 224, etc. The insulating layer 216 functions as a planarizing layer.

[0138] In addition, the structure 11 is provided on the insulating layer 216. As shown in FIG. A part of the structure 11 is provided at a position higher than the lower surface of 31a.

[0139] In addition, the transistors 201, 202, and 205 are partially A conductive layer 221 functions as a gate electrode, and a part of the conductive layer 221 functions as a source electrode or a drain electrode. The conductive layer 222 and the semiconductor layer 231 are functionally functional. The same hatching pattern is applied to the multiple layers that are to be formed.

[0140] In FIG. 9, the capacitor 203 is a conductive layer which functions as a gate electrode of the transistor 205. 221, a portion of the insulating layer 211, and the source or drain electrode of the transistor 205. 2 shows an example in which the conductive layer 222 is configured as a part of the conductive layer 222 that functions as an electrode.

[0141] The pair of conductive layers 222 of the transistor 202 that is electrically connected to the capacitor 203 The conductive layer 222 that is not connected functions as a part of a signal line. The conductive layer 221, which functions as a gate electrode, also functions as a part of the scan line.

[0142] In FIG. 9, a transistor having one gate electrode is used as an example of the transistor 202. In addition, a channel is formed in the transistor 201 and the transistor 205. The transistor has a semiconductor layer 231 sandwiched between two gate electrodes (conductive layer 221 and conductive layer 223). A transistor with two gate electrodes like this is In addition, by connecting two gate electrodes, it is possible to control the voltage at a high value. The transistor may be driven by providing a single signal. The field-effect mobility of the transistor can be increased compared to other transistors, increasing the on-current. As a result, a circuit capable of high-speed operation can be fabricated. By using a transistor with a large on-state current, the area occupied by the circuit can be reduced. Therefore, even if the number of wires increases when the display device is made larger or has higher resolution, each wire This can reduce the signal delay in the line, which can improve the display unevenness, for example. It is possible.

[0143] The transistors included in the circuit 34 and the transistors included in the display unit 32 have the same structure. The plurality of transistors in the circuit 34 may all have the same structure. Alternatively, transistors of different structures may be used in combination. The plurality of transistors may all have the same structure, or may have different structures. A combination of these may also be used.

[0144] At least one of the insulating layers 212 and 213 covering each transistor is resistant to water and It is preferable to use a material that is resistant to the diffusion of impurities such as hydrogen. This allows the transistor to function as a rear film, preventing external impurities from Therefore, the diffusion of the light can be effectively suppressed, and a highly reliable display device can be realized.

[0145] The conductive layer 224 provided over the insulating layer 214 functions as a wiring. The transistor is connected to the insulating layer 214 through openings provided in the insulating layer 213 and the insulating layer 212. The insulating layer 215 is electrically connected to either the source or drain of the transistor. A conductive layer 111 is provided to function as a base electrode. The conductive layer 111 is provided on an insulating layer 215. 9, the conductive layer 224 is electrically connected to one of the conductive layers 224 through the opening. The layer 111 is electrically connected to one of the source and drain of the transistor 205 through the conductive layer 224. are actively connected.

[0146] An insulating layer 216 is provided to cover the end of the conductive layer 111. The EL layer 112 is 111, the insulating layer 216, and the upper surface of the structure 11. 3 is provided to cover the EL layer 112 .

[0147] In the light-emitting element 40, the conductive layer 111 is made of a material that reflects visible light, and the conductive layer 113 is made of a material that reflects visible light. With this configuration, a material that transmits visible light is used for the substrate 31. The top-emission type light-emitting element can be a top-emission type light-emitting element. , and elements such as transistors and capacitors can be placed underneath it. In addition, when both the conductive layer 111 and the conductive layer 113 are made of a material that transmits visible light, the efficiency can be increased. By using a material that can emit light to both the substrate 31 side and the substrate 21 side, a dual emission It may also be a light emitting element of a silicon type.

[0148] Furthermore, a light emitting element that emits white light can be suitably used as the light emitting element 40. By doing so, it is not necessary to create separate light emitting elements 40 for the sub-pixels corresponding to different colors, and therefore it is possible to At this time, the light from the light emitting element 40 is incident on the colored layer 131a. When light passes through the glass, light outside a specific wavelength range is absorbed. becomes light that exhibits red color, for example.

[0149] In addition, a material that reflects visible light is used for the conductive layer 111, and a material that reflects visible light is used for the conductive layer 113. A material having transparency and semi-reflectivity is used, and a visible light By providing an optical adjustment layer that transmits light, a light emitting element 40 having a microcavity structure can be obtained. In this case, the thickness of the optical adjustment layer may be adjusted according to the sub-pixels corresponding to different colors. In addition, sub-pixels having an optical adjustment layer and sub-pixels not having an optical adjustment layer may be mixed. That's fine.

[0150] A light-shielding layer 132 is provided on the surface of the substrate 31 facing the substrate 21. The colored layer 131a and the colored layer 131b are provided to cover the opening of the layer 132. 31a, etc. are arranged so as to overlap the light emitting element 40. A part of it is arranged overlapping with the structure 11.

[0151] The structure 11 can be made of an insulating or conductive material. The structure 11 may be made of an insulating material similar to that of the insulating layer 216. A conductive material may be used, but in that case, the structure 11 should be electrically floating. Alternatively, by applying the same potential as the conductive layer 113 to the structure 11, the EL layer 112 on the structure 11 This can prevent the light from emitting light.

[0152] FIG. 9 shows an example in which a polarizing plate 130 is provided on the surface of the substrate 31 opposite to the substrate 21 side. It is preferable to use a circular polarizer as the polarizer 130. Examples of the circular polarizer include For example, a laminate of a linear polarizer and a quarter-wave retardation plate can be used. In order to suppress reflection of external light from reflective members (such as the conductive layer 111) provided in the display unit 32, It is possible.

[0153] FIG. 9 shows an example in which the light emitting element 40 is sealed with an adhesive layer 141. By using a material with a higher refractive index than air, a space is created between the light emitting element 40 and the substrate 31. In comparison with the case where the light emitting element 40 is not provided, the light extraction efficiency from the light emitting element 40 can be improved.

[0154] The adhesive layer 141 may be disposed around the display unit 32, which is called a hollow sealing structure. At this time, the space formed by the substrate 21, the substrate 31, and the adhesive layer 141 is filled with air. It may be filled with an inert gas such as a rare gas or nitrogen gas, but it is preferable that it be filled with an inert gas such as a rare gas or nitrogen gas. In addition, if the space is decompressed relative to atmospheric pressure in a steady state, the operating environment (e.g. This prevents the substrate 31 or the substrate 21 from expanding due to the expansion of the space caused by pressure or temperature. On the other hand, if the space is under a positive pressure relative to atmospheric pressure, impurities such as moisture may be trapped in the substrate 31 and the substrate. 21, adhesive layer 141, or gaps therebetween, can be prevented from diffusing into the space.

[0155] A terminal portion 204 is provided in an area near the end of the substrate 21. The terminal portion 204 is 9. In the configuration shown in FIG. 9, the wiring 3 5 and a conductive layer 111 are laminated to form a terminal portion 204.

[0156] The above is the description of the cross-sectional configuration example 2-1.

[0157] [Cross-sectional configuration example 2-2] FIG. 10 shows a display device 10 using a pair of flexible substrates 171 and 181. 10 shows an example of a cross-sectional configuration of the display device 10. The display surface of the display device 10 shown in FIG. .

[0158] The display device 10 shown in FIG. 10 includes a substrate 171 instead of the substrate 21 in FIG. 9, and an adhesive layer 17 2, and an insulating layer 173. Also, instead of the substrate 31, a substrate 181, an adhesive layer 182, and It has an insulating layer 183 .

[0159] The insulating layer 173 and the insulating layer 183 may be made of a material that is resistant to the diffusion of impurities such as water. preferable.

[0160] In the display device 10 shown in FIG. 10, the insulating layer 173 and the insulating layer 183 are used to separate the transistors. The substrate 171, the substrate 181, and the light emitting element 40 are sandwiched between the substrate 171 and the substrate 181. When the adhesive layer 172, adhesive layer 182, etc. are made of a material that easily diffuses impurities such as water or hydrogen However, the insulating layer 17 located inside these (on the side of each transistor and light emitting element 40) The diffusion of these impurities is suppressed by the insulating layer 183, and therefore reliability is improved. In addition, the materials of the substrate 171, the substrate 181, the adhesive layer 172, the adhesive layer 182, etc. When selecting materials, it is not necessary to consider the diffusibility of impurities, so various materials can be used. can be done.

[0161] [Example of manufacturing method] Here, a method for manufacturing a flexible display device will be described.

[0162] For the sake of convenience, the term "laminated structure including pixels and circuits," "colored layer (color filter)" and other optical components are used here. and a laminated structure including electrodes and wiring that constitute the touch sensor. The element layer includes, for example, a display element, and in addition to the display element, The display device may include wiring for electrical connection, and elements such as transistors used in pixels and circuits.

[0163] In this case, a flexible member (for example, the member shown in FIG. 10) that finally supports the element layer is used. The substrates (substrate 171, substrate 181, etc.) are referred to as substrates. This also includes extremely thin films of 10 nm or more and 200 μm or less.

[0164] A typical method for forming an element layer on a substrate having a flexible insulating surface is There are two methods as follows: One is to form the element layer directly on the substrate. The other method is to form an element layer on a support substrate different from the substrate, and then peel the element layer from the support substrate. After that, the device layer is transferred to the substrate.

[0165] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed while the plate is fixed to the support substrate, it is difficult to transport the plate within and between devices. This is preferable because it is easier.

[0166] In addition, when a method is used in which an element layer is formed on a support base material and then transferred to a substrate, the support material is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support substrate and the element layer are peeled off and transferred to the substrate. The material should be selected so that the separation occurs at the interface of the edge layer or in the release layer. By using a material with high heat resistance for the support substrate and the peeling layer, the temperature applied when forming the element layer can be reduced. This is preferable because it is possible to increase the upper limit of the degree of diffusion and form an element layer having elements with higher reliability. I wish.

[0167] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide is stacked, and silicon nitride, silicon oxynitride, or the like is used as an insulating layer on a peeling layer. It is preferable to use a laminate of multiple layers of silicon, silicon nitride oxide, etc. Among them, oxynitride refers to a material whose composition contains more oxygen than nitrogen. Nitrided oxide refers to a material whose composition contains more nitrogen than oxygen.

[0168] The element layer and the support substrate can be separated by applying a mechanical force or by peeling the separation layer. Examples include etching or infiltrating the peeled interface with a liquid. Alternatively, the difference in thermal expansion between the two layers that form the peel interface can be used to heat or cool the material. The peeling may be carried out by

[0169] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peel layer.

[0170] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. At this time, a part of the organic resin is locally heated using a laser beam or the like. Or, peeling by physically cutting or penetrating part of the organic resin with a sharp object. Alternatively, a starting point may be formed, and peeling may be carried out at the interface between the glass and the organic resin.

[0171] Alternatively, a heat generating layer is provided between the support substrate and an insulating layer made of organic resin, and the heat generating layer is heated. By doing so, the heat generating layer may be peeled off at the interface between the heat generating layer and the insulating layer. Materials that generate heat by passing current through them, materials that generate heat by absorbing light, and materials that generate heat by applying a magnetic field. For example, the heat generating layer can be made of various materials, such as a material that generates heat by heating. The material can be selected from semiconductors, metals, and insulators.

[0172] In the above-described method, the insulating layer made of organic resin is used as a substrate after peeling. It is possible.

[0173] For example, in the case of the configuration shown in FIG. 10, a first release layer and an insulating layer 173 are formed on a first support substrate. After forming the layers in order, the upper layer structure is formed. After forming the second release layer and the insulating layer 183 in this order on the base material, the structure above them is formed. Next, the first supporting substrate and the second supporting substrate are bonded together with an adhesive layer 141. Thereafter, the second support substrate and the second release layer are separated by peeling at the interface between the second release layer and the insulating layer 183. The delamination is removed, and the insulating layer 183 and the substrate 181 are bonded together with the adhesive layer 182. The first support substrate and the first release layer are removed by peeling at the interface between the release layer and the insulating layer 173. Then, the insulating layer 173 and the substrate 171 are bonded together by the adhesive layer 172. Either side may go first.

[0174] The above is a description of the method for manufacturing a flexible display device.

[0175] [About each component] Each of the above components will be described below.

[0176] A material having a flat surface can be used for the substrate of the display device. The substrate on the side from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic Materials such as aramic, sapphire, and organic resins can be used.

[0177] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate with a thickness that allows flexibility, a flexible display device can be realized. Cut.

[0178] In addition, the substrate on the side from which light is not extracted does not need to be light-transmitting. In addition to the substrate, a metal substrate or the like can also be used. Since heat can be easily conducted to the body, local temperature rises in the display device can be suppressed, which is preferable. To obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less. It is more preferable that the thickness is 20 μm or more and 50 μm or less.

[0179] The material for the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys or stainless steel are preferably used. It is possible.

[0180] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. For example, a substrate that has been subjected to a coating process such as spin coating or dipping, or an electrodeposition process may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in the air or heating it, an oxide film is formed on the surface of the substrate by anodizing or other methods. That's fine.

[0181] Examples of materials that are flexible and transparent to visible light include: Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, polymers methyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. x10 -6 / K or less polyamide-imide resin, polyimide resin, PET, etc. are preferably used. In addition, a substrate in which glass fiber is impregnated with organic resin or an organic filler is used. It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0182] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, and polyamide fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxide Examples of the fiber include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from glass, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fibrous body is impregnated with resin and the resin is hardened is formed into a structure. The flexible substrate may be a substrate made of a fiber and a resin. The use of such a structure is preferred because it improves reliability against damage due to bending or local pressure. It's nice.

[0183] Alternatively, glass, metal, or the like that is thin enough to be flexible can also be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive layer may be used.

[0184] A hard coat layer (e.g., a thin film) is applied to a flexible substrate to protect the surface of the touch panel from scratches. For example, silicon nitride, aluminum oxide, etc.), or a layer of a material that can distribute pressure (for example, Aramid resin or the like may be laminated on the display element. To prevent this, an insulating film with low water permeability may be laminated on the flexible substrate. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, An inorganic insulating material such as aluminum nitride can be used.

[0185] The substrate may be formed by laminating a plurality of layers. In particular, a substrate having a glass layer may be used. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable display device.

[0186] [Transistor] The transistor has a conductive layer that functions as a gate electrode, a semiconductor layer, and a a conductive layer that functions as a drain electrode; a conductive layer that functions as a gate insulating layer; The above describes the case where a bottom-gate transistor is used. are.

[0187] Note that there is no particular limitation on the structure of a transistor included in a touch panel of one embodiment of the present invention. For example, it may be a planar type transistor or a staggered type transistor. Alternatively, a top gate or bottom gate transistor may be used. Alternatively, the transistor may have a gate electrode above and below the channel. It may be provided.

[0188] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0189] In addition, semiconductor materials used in transistors include, for example, elements of Group 14 (silicon For the semiconductor layer, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0190] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it can reduce the current in the off state of the transistor.

[0191] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor that cannot be used.

[0192] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0193] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the resistance, thereby achieving a highly reliable transistor.

[0194] In addition, a transistor using an oxide semiconductor with a wider band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of each pixel. A display device with reduced power consumption can be realized.

[0195] The semiconductor layer may be, for example, at least indium, zinc, and M (aluminum, titanium, gallium). Sm, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium It includes a film expressed as In-M-Zn oxide containing metals such as aluminum or hafnium. Furthermore, it is preferable to reduce variations in electrical characteristics of transistors using the oxide semiconductor. Therefore, it is preferable to include a stabilizer therewith.

[0196] The stabilizer includes the metals listed above under M, such as gallium, tin, and hafnium. Other stabilizers include tungsten, aluminum, and zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, gadolinium, terbium, dysprosium, holmium, erbium, Examples include thulium, ytterbium, and lutetium.

[0197] Examples of oxide semiconductors that form the semiconductor layer include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn-based oxides, In-Sm-Zn-based oxides, In-Eu-Zn-based oxides, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn In-based oxides, In-Lu-Zn-based oxides, In-Sn-Ga-Zn-based oxides, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxides, In-Hf-Al-Zn oxides can be used. can.

[0198] Here, the In-Ga-Zn oxide refers to an oxide having In, Ga, and Zn as its main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be included.

[0199] The semiconductor layer and the conductive layer may contain the same metal element from the above oxides. By using the same metal element for the conductor layer and the conductive layer, the manufacturing cost can be reduced. For example, by using a metal oxide target with the same metal composition, the manufacturing cost can be reduced. In addition, the etching gas or etching However, the semiconductor layer and the conductive layer must contain the same metal element. For example, during the manufacturing process of a transistor or a capacitor, the composition may be different. In this case, metal elements in the film may be released, resulting in a different metal composition.

[0200] The oxide semiconductor constituting the semiconductor layer has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. The off-state current of a transistor can be reduced by using an oxide semiconductor with a wide gap. can be done.

[0201] When the oxide semiconductor constituting the semiconductor layer is In-M-Zn oxide, The atomic ratio of the metal elements in the sputtering target used to form a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios were In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In The preferred ratios are M:Zn=3:1:2, 4:2:4.1, etc. The atomic ratios of the metal elements contained in the sputtering target are included as errors. This includes a variation of plus or minus 40% in the child ratio.

[0202] For example, an oxide semiconductor film having a low carrier density is used as the semiconductor layer. , the carrier density is 1×10 17 / cm 3 Less than 1 × 10 15 / cm3 Below, More preferably, 1×10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 below, More preferably, 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than Such an oxide semiconductor can be a high-purity intrinsic or This results in a low impurity concentration and a high-purity intrinsic oxide semiconductor. Since the density is low, it can be said that the oxide semiconductor has stable characteristics.

[0203] However, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use an appropriate composition depending on the required properties (e.g., the mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer must be carefully considered. It is preferable to appropriately set the density, atomic ratio of metal element to oxygen, interatomic distance, density, etc. stomach.

[0204] In the oxide semiconductor that makes up the semiconductor layer, silicon and carbon, which are group 14 elements, If the semiconductor layer contains oxygen, oxygen vacancies increase and the semiconductor layer becomes n-type. The concentrations of silicon and carbon in the body layer (obtained by secondary ion mass spectrometry) were x10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 and do.

[0205] In addition, alkali metals and alkaline earth metals generate carriers when bonded to oxide semiconductors. This may result in an increase in the off-state current of the transistor. Alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in body layers. The concentration of 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0206] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor layer, the electrons that are carriers This increases the carrier density and makes it easier to become n-type. Transistors using semiconductors tend to be normally-on. The nitrogen concentration obtained by secondary ion mass spectrometry in 18 atoms / cm 3 It is preferable to do the following:

[0207] The semiconductor layer may also have a non-single crystal structure, for example. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor ctor), polycrystalline, microcrystalline, or amorphous structures. The amorphous structure has the highest density of defect states, while the CAAC-OS has the lowest density of defect states.

[0208] An oxide semiconductor film with an amorphous structure has, for example, a disordered atomic arrangement and does not contain crystalline components. Alternatively, the amorphous oxide film may have a completely amorphous structure and no crystalline portion. do not have.

[0209] Note that the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA C-OS region, and a single crystal structure region. The mixed film may be, for example, a single layer structure including any two or more of the above-described regions, or a stacked layer structure.

[0210] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Closed Aligned Complementary)-OS that can be used in the transistor disclosed in one aspect of the present invention will be described

[0211] In this specification and the like, a metal oxide is an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors ), oxide semiconductors (also simply referred to as Oxide Semiconductor or OS) and the like. For example, when a metal oxide is used for the active layer of a transistor, the metal<OO01479>oxide may be referred to as an oxide semiconductor. That is, when described as an OS FET, it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor

[0212] In this specification, when a region having a conductor function and a region having a dielectric function of a metal oxide are mixed and the entire metal oxide functions as a semiconductor, it is defined as CAC (Closed<00OO1485>Aligned Complementary)-OS (Oxide Semiconductor), or CAC-metal oxide

[0213] ​​​​​​​In other words, CAC-OS is a type of oxide semiconductor in which the elements constituting the oxide semiconductor are 0.5 nm or more in thickness. Distributed in a size of 10 nm or less, preferably 0.5 nm to 3 nm or less, or in the vicinity thereof In the following, the oxide semiconductor is one of the materials. The element is unevenly distributed, and the region having the element is 0.5 nm or more and 10 nm or less, preferably A mixture of particles with sizes between 0.5 nm and 3 nm or in the vicinity is called a mosaic or is also called patchy.

[0214] In a region where a specific element is concentrated, the physical properties are determined by the properties of the element. For example, among the elements that make up metal oxides, elements that tend to be insulators are unevenly distributed. On the other hand, among the elements that make up metal oxides, the elements that are relatively conductive are The region where elements that tend to be conductive are concentrated becomes a conductive region. The mosaic-like mixture of body regions allows the material to function as a semiconductor.

[0215] That is, the metal oxide in one embodiment of the present invention is a mixture of materials with different physical properties. matrix composite, or metal matrix composite It is a type of material (metal matrix composite).

[0216] Note that the oxide semiconductor preferably contains at least indium. and zinc. In addition to these, the element M (M is gallium, aluminum, etc.) Aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One selected from the group consisting of tungsten, hafnium, tantalum, magnesium, etc. or a plurality of types) may be included.

[0217] For example, CAC-OS in In-Ga-Zn oxide (In- Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0.) or Indium Zinc oxide (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0. ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) ), or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, and Z1 and Z2 are real numbers greater than 0.) The material is separated into mosaics. The mosaic-like InO X1 , or In X2 Zn Y2 O Z2 is uniformly distributed in the film This is a cloud-like configuration (hereinafter also referred to as a cloud-like configuration).

[0218] In other words, CAC-OS is X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the number of In atoms relative to the element M in the first region is The ratio of the number of atoms of In to the element M in the first region is greater than the ratio of the number of atoms of In to the element M in the second region. It is assumed that the concentration of In is higher than that of the second region.

[0219] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO) m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compounds include those represented by the formula:

[0220] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. The crystal structure is non-oriented and connected.

[0221] On the other hand, CAC-OS refers to the material structure of an oxide semiconductor. In a material composition containing Ga, Zn, and O, some of the nanoparticles are mainly composed of Ga. The region where In is observed as a nanoparticle and the region where In is observed as a nanoparticle are mainly composed of In are shown in Fig. Therefore, in CAC-OS, The crystal structure is a secondary factor.

[0222] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0223] In addition, GaO X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 There may be cases where a clear boundary cannot be observed in the region where [substance] is the main component.

[0224] In addition, instead of gallium, if one or more selected from aluminum, silicon, boron, yttrium, copper, barium, sodium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium etc. are included, CAC-OS has a structure in which nano-particle regions with the element as the main component are observed in part, and nano-particle regions with In as the main component are observed in part, and they are randomly dispersed in a mosaic pattern. Partially, nano-particle regions with the element as the main component are observed, and partially, nano-particle regions with In as the main component are observed, which are randomly dispersed in a mosaic pattern.

[0225] <Analysis of CAC-OS> Subsequently, using various measurement methods, the results of measurements on the oxide semiconductor formed on the substrate will be described.

[0226] ≪Composition and Fabrication Method of Samples≫ Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. Note that the sample has a structure including a substrate and an oxide semiconductor on the substrate.

[0227] The fabrication method of each sample will be described.

[0228] First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. The film formation conditions are such that the pressure in the chamber is 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used. Also, the sputtering apparatus​​​ An AC power of 2500 W is supplied to an oxide target placed inside the chamber.

[0229] As a condition for forming an oxide film, the substrate temperature is set to a temperature at which it is not intentionally heated (hereinafter referred to as (also called room temperature or RT), 130°C, or 170°C. The flow rate ratio of oxygen gas to the mixed gas of the element (hereinafter also referred to as oxygen gas flow rate ratio) is set to 10%. , 30%, or 100%, to prepare nine samples.

[0230] <X-ray diffraction analysis> In this section, X-ray diffraction (XRD) was performed on nine samples. The results of the measurements are as follows. The XRD equipment used was a Bruker product. D8 ADVANCE was used. The conditions were θ / In 2θ scanning, the scanning range was 15° to 50°, and the step width was 0.02d. For example, the scanning speed was set to 3.0 deg. / min.

[0231] Figure 30 shows the results of XRD spectrum measurement using the out-of-plane method. In addition, in Figure 30, the upper row shows the measurement results for a sample where the substrate temperature during film formation was 170°C. The middle row shows the measurement results for a sample with a substrate temperature of 130°C during film formation, and the bottom row shows the measurement results for a sample with a substrate temperature of 130°C during film formation. The left column shows the measurement results for the sample with the substrate temperature condition of RT. The center column shows the measurement results for samples with a 10% oxygen gas flow rate. The right column shows the measurement results for the sample with a 30% oxygen gas flow rate, and the right column shows the results for the sample with a 100% oxygen gas flow rate. The measurement results are shown below.

[0232] The XRD spectrum shown in FIG. 30 shows that the film thickness is increased by increasing the substrate temperature or by increasing the amount of acid during film formation. By increasing the ratio of the oxygen gas flow rate, the peak intensity around 2θ=31° increases. The peak near 2θ=31° indicates that the c-axis is oriented in the direction approximately perpendicular to the surface on which the film is formed or the upper surface. c-axis aligned crystal IGZO compound (CAAC) It is also called line)-IGZO.

[0233] In addition, the XRD spectrum shown in FIG. 30 shows that the substrate temperature during film formation was low or the oxygen gas The smaller the flow rate ratio, the less clear the peak. Alternatively, the sample with a small oxygen gas flow rate ratio has ab-plane and c-axis orientations in the measurement area. It can be seen that no direction is visible.

[0234] <Analysis by electron microscope> In this section, the sample was prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. HAADF (High-Angle Annular Dark Field)-S TEM(Scanning Transmission Electron Micro The results of the observation and analysis using the HAADF- Images obtained by STEM are also called TEM images.

[0235] Planar images obtained by HAADF-STEM (hereinafter also referred to as planar TEM images), and The results of image analysis of the cross-sectional images (hereinafter also referred to as cross-sectional TEM images) will be explained. The TEM images were observed using a spherical aberration correction function. The images were taken using an atomic resolution analytical electron microscope JEM-ARM200F manufactured by JEOL Ltd. The electron beam was irradiated at an acceleration voltage of 200 kV with a beam diameter of approximately 0.1 nmφ.

[0236] FIG. 31(A) shows a film formed at a substrate temperature of RT and an oxygen gas flow rate of 10%. The planar TEM image of the sample is shown in Fig. 31(B). This is a cross-sectional TEM image of a sample prepared at a gas flow rate of 10%.

[0237] <Electron diffraction pattern analysis> In this section, the sample was prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. By irradiating the sample with an electron beam with a probe diameter of 1 nm (also called nano-beam electron beam), The results of acquiring sagittal diffraction patterns will now be described.

[0238] As shown in FIG. 31(A), the substrate temperature during film formation was RT, and the oxygen gas flow rate ratio was 10%. In the planar TEM image of the sample, black spots a1, a2, a3, a4, and The electron diffraction pattern shown at point a5 is observed. The line is projected and moved at a constant speed from the 0-second position to the 35-second position. The results for point a1 are shown in Figure 31(C), the results for black point a2 are shown in Figure 31(D), and the results for black point a3 are shown in Figure 31(E). (E), the results for black point a4 are shown in Figure 31(F), and the results for black point a5 are shown in Figure 31(G).

[0239] From Figure 31(C), Figure 31(D), Figure 31(E), Figure 31(F), and Figure 31(G) In this case, a bright area can be observed that draws a circle (ring-shaped). Multiple spots can be observed.

[0240] Also, as shown in FIG. 31(B), the substrate temperature during film formation was RT and the oxygen gas flow rate ratio was 10%. In the cross-sectional TEM image of the sample prepared in Observe the electron diffraction patterns indicated by black spots b1 and b5. The results for point b2 are shown in Figure 31(I), the results for black point b3 are shown in Figure 31(J), and the results for black point b4 are shown in Figure 31 (K) and the results for black point b5 are shown in Figure 31(L).

[0241] From Figure 31(H), Figure 31(I), Figure 31(J), Figure 31(K), and Figure 31(L) A ring-shaped area with high brightness can be observed. In addition, multiple spots can be observed in the ring-shaped area. It can be measured.

[0242] Here, for example, for CAAC-OS with InGaZnO4 crystals, When an electron beam with a probe diameter of 300 nm is incident on the line, the (00 9) The diffraction pattern includes spots due to the CAAC-OS It has been found that the film has a c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the surface on which the film is formed or the upper surface. On the other hand, when an electron beam with a probe diameter of 300 nm is incident perpendicularly to the sample surface, When the diffraction pattern is changed, a ring-shaped diffraction pattern is observed. It can be seen that the b axis has no orientation.

[0243] In addition, oxide semiconductors having microcrystals (nano crystalline oxide nc-OS) with a large probe diameter When electron diffraction is performed using an electron beam (for example, 50 nm or larger), a halo pattern is observed. Diffraction patterns are observed. In addition, electron beams with small probe diameters (e.g. When nanobeam electron diffraction is performed using a material with a diameter of less than 50 nm, bright spots are observed. In addition, when nanobeam electron diffraction is performed on nc-OS, a circular (ring-shaped) structure is observed. In some cases, a bright area is observed. In addition, multiple bright spots are observed in the ring-shaped area. It may be measured.

[0244] Electron diffraction of a sample prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10% The pattern has a ring-shaped area with high brightness and multiple bright spots in the ring area. The sample fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation was subjected to electron beam irradiating. The folding pattern is nc-OS, and there is no orientation in the planar direction or cross-sectional direction. stomach.

[0245] From the above, oxide semiconductors with low substrate temperatures or low oxygen gas flow rates during film formation The oxide semiconductor film is clearly different from both an amorphous oxide semiconductor film and a single-crystal oxide semiconductor film. It can be assumed that it has the following properties.

[0246] ≪Elemental analysis≫ In this article, we will discuss energy dispersive X-ray spectroscopy (EDX). EDX mapping was obtained and evaluated using ve X-ray spectroscopy. By evaluating the film, the substrate temperature during film formation was set to RT and the oxygen gas flow rate was set to 10%. The results of elemental analysis of the sample are described below. An energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used as the analyzer. A Si drift detector is used to detect the X-rays emitted from the sample.

[0247] In EDX measurement, each point in the analysis area of ​​the sample is irradiated with an electron beam, and the resulting The energy and frequency of the characteristic X-rays of the sample are measured, and the EDX spectrum corresponding to each point is obtained. In this embodiment, the peaks in the EDX spectrum at each point are determined based on the electron transition to the L shell of the In atom. electron transition to the K shell of Ga atoms, electron transition to the K shell of Zn atoms, and electron transition to the K shell of O atoms The ratio of each atom at each point is calculated. By performing EDX analysis on the target area, an EDX map showing the distribution of the ratio of each atom is obtained. It is possible.

[0248] Figure 32 shows the sample fabricated at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. FIG. 32(A) shows EDX mapping of Ga atoms. (The ratio of Ga atoms to the total atoms ranges from 1.18 to 18.64 [atomic%].) ) Figure 32(B) shows the EDX mapping of In atoms (the ratio of In atoms to all atoms). The ratio of the number of children is in the range of 9.28 to 33.74 [atomic%]. (C) EDX mapping of Zn atoms (ratio of Zn atoms to total atoms is 6.69 to 8.99). 24.99 [atomic%] range.) Also, Fig. 32(A) and Fig. 32( 32(B) and 32(C) are graphs showing the substrate temperature RT and oxygen gas flow rate ratio 10% during film formation. The cross section of the sample prepared in step 1 shows the same area. The more elements measured in the range, the brighter the image, and the fewer elements measured, the darker the image. The ratio of elements is shown by light and dark. The magnification of the EDX mapping shown in Figure 32 is 720. Ten thousand times more.

[0249] In the EDX mapping shown in Figures 32(A), 32(B), and 32(C), the images The relative light and dark distribution can be seen in the graph. The substrate temperature RT and oxygen gas flow rate ratio during film formation were In the sample prepared at %, it can be seen that each atom exists with a distribution. The areas enclosed by the solid lines and the dashed lines shown in Figures 32(A), 32(B), and 32(C) are Pay attention to the range.

[0250] In FIG. 32(A), the area enclosed by the solid line contains many relatively dark areas, and the area enclosed by the dashed line contains many relatively dark areas. In Figure 32(B), the area enclosed by the solid line contains many relatively bright areas. The area surrounded by the dashed line contains many relatively bright areas, while the area surrounded by the dashed line contains many relatively dark areas.

[0251] In other words, the area surrounded by the solid line is the area where the In atoms are relatively abundant, and the area surrounded by the dashed line is the area where the In atoms are relatively abundant. This is a region where there are relatively few atoms. In FIG. 32(C), the area surrounded by the solid line The right side is a relatively bright area, and the left side is a relatively dark area. The range is In X2 Zn Y2 O Z2 , or InO X1 This is the area where the main components are:

[0252] The area surrounded by the solid line is the area where the number of Ga atoms is relatively small, and the area surrounded by the dashed line is the area where the number of Ga atoms is relatively small. In Figure 32(C), the area surrounded by the dashed line is the upper left area. The upper right area is a relatively bright area, and the lower right area is a relatively dark area. The area enclosed by the dashed line is GaO X3 , or Ga X4 Zn Y4 O Z4 Areas where the main components are is.

[0253] Also, from Figures 32(A), 32(B), and 32(C), the distribution of In atoms is a atoms are distributed relatively uniformly, and InO X1 The region where is the main component is In X 2Zn Y2 O Z2 It appears that they are connected to each other through the region where In this way, X2 Zn Y2 O Z2 , or InO X1 The region where is the main component is It spreads and forms like a cloud.

[0254] Thus, GaO X3 The region where In is the main component and X2 Zn Y2 O Z2 , or In O X1 In-Ga-Zn oxide with a structure in which the regions in which The compound can be referred to as CAC-OS.

[0255] The crystal structure of CAC-OS is an nc structure. The c-structure is an IGZO containing single crystal, polycrystalline, or CAAC structures in the electron diffraction pattern. In addition to the bright spots caused by In addition to several bright spots, a ring-shaped area of ​​high brightness appears, indicating a crystal. The structure is defined.

[0256] Also, from Figures 32(A), 32(B), and 32(C), GaO X3 is the main component In a certain area, and X2 Zn Y2 O Z2 , or InO X1The size of the region where is the principal component The size is preferably 0.5 nm to 10 nm, or 1 nm to 3 nm. Preferably, in EDX mapping, the diameter of the region where each element is the main component is 1 nm or more and 2 nm or less. nm or less.

[0257] From the above, it can be seen that CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. and has properties different from those of IGZO compounds. X3 Na The area where In is the main component and X2 Zn Y2 O Z2 , or InO X1 The area where is the main component The structure is such that the regions are phase-separated into a mosaic of regions each containing one element as the main component.

[0258] Here, In X2 Zn Y2 O Z2 , or InO X1 The region where is the main component is GaO X This is a region with high conductivity compared to the region where In is the main component. X2 Zn Y2 O Z2 , or InO X1 The carriers flow through the area where the main component is Therefore, the conductivity of In is expressed as a semiconductor. X2 Zn Y2 O Z2 , or InO X1 The region where the main component is distributed in a cloud-like shape in the oxide semiconductor provides a high field efficiency. The resulting mobility (μ) can be achieved.

[0259] On the other hand, GaO X3 The region where the main components are In X2 Zn Y2 OZ2 , or InO X1 This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the region in which the main component is Switching operation can be achieved.

[0260] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation and , In X2 Zn Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ), and high field-effect mobility (μ) can be done.

[0261] Furthermore, semiconductor devices using CAC-OS have high reliability. It is ideal for various semiconductor devices including displays.

[0262] Alternatively, silicon is preferably used as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single-crystal silicon. It can be formed without any additional process and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to the pixel, the aperture ratio of the pixel can be improved. Even when the pixels are extremely fine, the gate drive circuit and source drive circuit This makes it possible to form the circuit and the pixel on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0263] The bottom-gate transistor described in this embodiment can reduce the manufacturing steps. In this case, amorphous silicon is used, which is preferable to polycrystalline silicon. Since it can be formed at low temperatures, it is suitable for use as a material for wiring and electrodes below the semiconductor layer, as well as for substrates. It is possible to use low-heat materials, which allows for a wider range of material choices. For example, a glass substrate with an extremely large area can be suitably used. Since the impurity region of the transistor is easily formed in a self-aligned manner, the characteristics of the transistor are not uniform. This is particularly preferable since it can reduce the amount of silicon used, such as polycrystalline silicon or single crystal silicon. It is suitable for use in

[0264] [Conductive Layer] In addition to the gate, source, and drain of the transistor, various wiring and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and titanium dioxide. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or titanium Examples of such metals include tungsten and alloys containing tungsten as the main component. Films containing the materials can be used as single layers or as laminated structures. For example, silicon a single layer structure of aluminum film containing titanium; a two-layer structure of aluminum film laminated on titanium film; Two-layer structure with aluminum film laminated on stainless steel film, copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten Two-layer structure with copper film laminated on top of titanium film or titanium nitride film, and aluminum film laminated on top of that. A titanium film or a titanium nitride film is formed on the aluminum or copper film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is formed on top of that It is also possible to use oxides such as indium oxide, tin oxide, or zinc oxide. In addition, copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0265] Examples of the conductive material having light-transmitting properties include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, and gallium-doped zinc oxide, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tantalum, etc. such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials and alloy materials containing such metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. When using these nitrides, it is sufficient to make them thin enough to have light transmission properties. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of tin oxide or the like, since the conductivity can be increased. These include conductive layers such as various wirings and electrodes that constitute the display device, and conductive layers of the display element. The conductive layer can also be used as a pixel electrode or a common electrode.

[0266] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic and epoxy. In addition to resins and resins with siloxane bonds, silicon oxide, silicon oxynitride, silicon nitride oxide, Inorganic insulating materials such as silicon, silicon nitride, and aluminum oxide can also be used.

[0267] It is also preferable that the light emitting element is provided between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light emitting element, and prevents a decrease in the reliability of the device. It can be controlled.

[0268] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon nitride oxide film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0269] For example, the water vapor permeation rate of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1 × 1 0 -7 [g / (m 2 ·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·d ay)] below.

[0270] [Light-emitting element] The light emitting element can be a self-luminous element, which can be illuminated by current or voltage. The category includes devices whose light intensity is controlled, such as light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0271] Light-emitting elements are available in top-emission, bottom-emission, and dual-emission types. The electrode on the light extraction side uses a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0272] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole-transporting material, hole-blocking material, high electron-transporting material, electron injection materials with high electron transporting and hole transporting properties, or bipolar materials (materials with high electron transporting and hole transporting properties), etc. The film may further include a layer containing a metal oxide.

[0273] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. The layers constituting the EL layer may each be formed by a deposition method (including a vacuum deposition method). The layer can be formed by a method such as a transfer method, a printing method, an ink jet method, or a coating method.

[0274] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are The luminescent material contained in the EL layer emits light.

[0275] When a white light emitting element is used as the light emitting element, two or more types of light emitting elements are used in the EL layer. For example, it is preferable to use a configuration in which two or more luminescent materials each emit light of a complementary color. White light can be obtained by selecting a luminescent material so that the following relationship is established. Luminescent materials that emit light in R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or among luminescent materials that emit light containing spectral components of two or more colors of R, G, and B, It is preferable that the spectrum of light emitted from the light-emitting element is in the visible light region. A light emitting element having two or more peaks within a wavelength range (for example, 350 nm to 750 nm) is used. It is preferable to use a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions as well.

[0276] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably stacked. The layers may be stacked in contact with each other or separated by an area that does not contain any light-emitting material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (for example, a host material and an assist material) as the phosphorescent layer, and A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. Furthermore, the driving voltage is reduced.

[0277] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer may be laminated therebetween to form a tandem element.

[0278] The conductive film that transmits visible light is made of, for example, indium oxide, indium tin oxide, indium tin oxide, It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. Also, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum , iron, cobalt, copper, palladium, titanium, and other metal materials, including these metal materials Alloys or nitrides of these metal materials (for example, titanium nitride) can also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, it is preferable to use graphene or the like, since the conductivity can be increased. .

[0279] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, or the like. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above metal materials and alloys may contain lanthanum. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. Furthermore, when in contact with the aluminum film or aluminum alloy film, By laminating a metal film or a metal oxide film on the surface, oxidation can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. The conductive film that transmits visible light may be laminated with a film made of a metal material. For example, a film made of silver and indium may be laminated. laminated films of silver-magnesium alloy and indium tin oxide, etc. It can be used.

[0280] The electrodes may be formed by vapor deposition or sputtering. Forming using ejection methods such as ink jet printing, printing methods such as screen printing, or plating methods It can be achieved.

[0281] The above-mentioned light-emitting layer, the substance having a high hole injection property, the substance having a high hole transport property, and the electrode The layer containing a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, polymers, etc.). For example, by using quantum dots in the light-emitting layer, It can also function as

[0282] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0283] [Liquid Crystal Element] As a liquid crystal element, for example, a vertical alignment (VA) A liquid crystal element to which a vertical alignment mode is applied can be used. Multi-Domain Vertical Alignment) mode, PVA( Patterned Vertical Alignment) mode, ASV (Adv Advanced Super View mode can be used.

[0284] In addition, the liquid crystal element may be a liquid crystal element to which various modes are applied. In addition to VA mode, there are also TN (Twisted Nematic) and IPS (In-Vention) modes. -Plane-Switching) mode, FFS (Fringe Field Switching) itching) mode, ASM(Axially Symmetric aligne) d Micro-cell mode, OCB (Optically Compensated ed Birefringence mode, FLC (Ferroelectric L Liquid Crystal mode, AFLC (AntiFerroelectric) Liquid crystal elements that use a liquid crystal mode or the like can be used. .

[0285] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal. The optical modulation effect of the liquid crystal is due to the electric field applied to the liquid crystal (horizontal electric field, vertical electric field). The liquid crystal used in the liquid crystal element is controlled by a bias current (including an electric field or an oblique electric field). Thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, polymer dispersed liquid crystal (PDLC) Polymer Dispersed Liquid Crystal, Ferroelectric Liquid Crystal These liquid crystal materials can be used as cholesteric liquid crystals depending on the conditions. The phases include nematic, smectic, cubic, chiral nematic, and isotropic phases.

[0286] The liquid crystal material may be either a positive type liquid crystal or a negative type liquid crystal. The optimum liquid crystal material may be selected depending on the mode and design to be applied.

[0287] In addition, an alignment film can be provided to control the alignment of the liquid crystal. When employed, a liquid crystal that exhibits a blue phase without using an alignment film may be used. When the temperature of cholesteric liquid crystal is increased, the phase changes from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is difficult to distinguish between the two. In order to improve the range, a liquid crystal composition containing a chiral agent of several weight percent or more is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response time and exhibits optically isotropic Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment. Furthermore, since no alignment film is required, rubbing treatment is not required. This prevents electrostatic damage caused by rubbing, and This can reduce defects and damage to the liquid crystal display device during the manufacturing process.

[0288] The liquid crystal element may be a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element. An element or the like can be used.

[0289] When using a transmissive or semi-transmissive liquid crystal element, two polarizing A backlight is provided outside the polarizing plate. It may be a direct-type backlight or an edge-light type backlight. Direct backlight with LED (Light Emitting Diode) This makes local dimming easier and increases contrast. In addition, when an edge-light type backlight is used, the touch panel including the backlight can be easily displayed. This is preferable because it allows the thickness of the chip panel module to be reduced.

[0290] When a reflective liquid crystal element is used, a polarizing plate is provided on the display surface side. It is preferable to place a light diffusion plate on the display surface side, as this improves visibility.

[0291] [Adhesive layer] The adhesive layer can be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as adhesives and anaerobic adhesives can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low viscosity is preferable. Two-component resin may also be used. It may be used.

[0292] The resin may also contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that absorbs moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture will not penetrate into the element. This is preferable because it can suppress the occurrence of light leakage and improve the reliability of the display panel.

[0293] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, Ruthenium and the like can be used.

[0294] [Connection layer] Anisotropic Conductive Film (ACF) is used as the connection layer. conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0295] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples include resin materials.

[0296] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metals, and metal oxides. and composite oxides containing a solid solution of a plurality of metal oxides. For example, a colored layer that transmits light of a certain color may be used. A laminated structure of a film containing the material to be used and a film containing the material to be used for a colored layer that transmits light of other colors. By using the same material for the colored layer and the light-shielding layer, the device can be standardized. This is preferable because it can simplify other steps.

[0297] This concludes the explanation of each component.

[0298] [Configuration example 2] Examples of the display device of one embodiment of the present invention include an input / output device (touch panel), an input An example of the configuration of a device (touch sensor) will be described.

[0299] In this specification and the like, a display panel, which is one aspect of a display device, displays an image or the like on a display surface. Therefore, a display panel is one type of output device. be.

[0300] In this specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). Integrated Circuit) or TCP (Tape Carrier Packa ge) or a connector such as COG (Chip On Ground) is attached to the board. A display panel module is a device that has an integrated circuit (IC) mounted using a method such as a glass display. , a display module, or simply a display panel.

[0301] In this specification, a touch sensor is a sensor that is touched by a detected object such as a finger or a stylus. The touch sensor has the function of detecting the proximity of the input. This is one aspect of the device.

[0302] In addition, in this specification and the like, a substrate having a touch sensor is referred to as a touch sensor panel or a single In this specification, the base of the touch sensor panel is A board with a connector, such as an FPC or TCP, attached, or a substrate A device with an IC mounted on it using the COG method or other methods is called a touch sensor panel module. It may be called a sensor module, a sensor module, or simply a touch sensor.

[0303] In this specification and the like, a touch panel, which is one aspect of a display device, is a device for displaying images and the like on a display surface. The function of displaying (outputting) and detecting when a detectable object such as a finger or stylus touches or comes close to the display surface. The touch panel also functions as a touch sensor that detects when a touch is made. This is one aspect of an input / output device.

[0304] The touch panel is, for example, a display panel (or display device) with a touch sensor, It can also be called a display panel (or display device) with a display function.

[0305] The touch panel may also have a configuration including a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside. do.

[0306] In addition, in this specification, a substrate of a touch panel is provided with a connector such as an FPC or TCP. Those with connectors attached, or those with ICs mounted on the board using the COG method, etc. When referred to as a touch panel module, display module, or simply a touch panel, There is.

[0307] [Touch sensor configuration example] An example of the configuration of the input device (touch sensor) will be described below with reference to the drawings.

[0308] 11A shows a schematic top view of the input device 150. The input device 150 includes a substrate 160 A plurality of electrodes 151, a plurality of electrodes 152, a plurality of wirings 155, and a plurality of wirings 156 are provided on the substrate. The substrate 160 also has a plurality of electrodes 151 and a plurality of electrodes 152 electrically connected thereto. A flexible printed circuit (FPC) 157 is installed. FIG. 11A shows an example in which an IC 158 is provided on an FPC 157. There are.

[0309] 11(B) shows an enlarged view of the area surrounded by the dashed line in FIG. 11(A). The electrode pattern has a shape in which multiple diamond-shaped electrode patterns are lined up in the horizontal direction of the paper. The diamond-shaped electrode patterns are electrically connected to each other. Similarly, the electrode 152 is A plurality of diamond-shaped electrode patterns are arranged in the vertical direction of the paper, and the diamond-shaped electrodes arranged in a row The electrode patterns are electrically connected to each other. Part of these overlaps and crosses each other. At this crossing part, electrodes 151 and 152 An insulator is sandwiched between the wires to prevent an electrical short circuit.

[0310] As shown in FIG. 11(C), a plurality of diamond-shaped electrodes 152 are connected to form a bridge electrode. The island-shaped electrodes 152 may be arranged in a vertical direction. The two adjacent electrodes 152 are electrically connected by a bridge electrode 153. With this configuration, the electrodes 151 and 152 can be made of the same conductive film. Therefore, the variation in the film thickness of these layers can be suppressed. This can prevent the resistance value and light transmittance of each electrode from varying depending on the location. Here, the electrode 152 has a bridge electrode 153, but the electrode 151 may have such a structure. Such a configuration may also be used.

[0311] 11(D), the electrodes 151 and 152 shown in FIG. 11(B) The inside of the diamond-shaped electrode pattern may be hollowed out, leaving only the outline. At this time, if the width of the electrodes 151 and 152 is thin enough not to be visible to the user, As will be described later, the electrodes 151 and 152 are made of a light-shielding material such as a metal or alloy. In addition, the electrode 151 or the electrode 152 shown in FIG. 11(D) may be the bridge electrode 1. 53 may be provided.

[0312] One electrode 151 is electrically connected to one wiring 155. 2 is electrically connected to one wiring 156. Here, either the electrode 151 or the electrode 152 One of them corresponds to a row wiring, and the other corresponds to a column wiring.

[0313] The IC158 has the function of driving the touch sensor. is supplied to either electrode 151 or electrode 152 via wiring 155 or wiring 156. In addition, the current (or potential) flowing through either the electrode 151 or the electrode 152 is The signal is input to IC 158 via line 155 or wiring 156 .

[0314] Here, when the input device 150 is placed on the display surface of the display panel to form a touch panel, Therefore, the electrodes 151 and 152 are preferably formed using a light-transmitting conductive material. In addition, the electrodes 151 and 152 are formed using a light-transmitting conductive material, and the electrodes 151 and 152 are formed using a light-transmitting conductive material. When the voltage is taken out through the electrode 151 or the electrode 152, the voltage is taken out between the electrode 151 and the electrode 152. It is preferable to arrange a conductive film containing the same conductive material as the dummy pattern. In this way, a part of the gap between the electrode 151 and the electrode 152 is filled with a dummy pattern. As a result, the brightness of the light passing through the input device 150 can be reduced. This can reduce unevenness in the degree of reflection.

[0315] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium are used. It is also possible to use a film containing graphene. For example, it can be formed by reducing a film containing graphene oxide formed in a film shape. As a method for this, a method of applying heat can be mentioned.

[0316] Alternatively, a metal or alloy thin enough to have light transmission properties can be used. , silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metals such as titanium, copper, palladium, or titanium alloys containing such metals can be used. Alternatively, nitrides of the metals or alloys (for example, titanium nitride) may be used. Furthermore, a laminated film in which two or more conductive films containing the above-mentioned materials are laminated may be used.

[0317] In addition, the electrodes 151 and 152 are made thin enough to be invisible to the user. A conductive film may be used. For example, such a conductive film may be processed into a lattice (mesh) shape. This allows for high conductivity and high visibility of the display device. nm or more and 100 μm or less, preferably 50 nm or more and 50 μm or less, more preferably 50 nm or more and 100 μm or less It is preferable that the pattern has a width of 10 μm or more and 20 μm or less. A conductive film having a line width is preferable because it is extremely difficult for a user to visually recognize the conductive film.

[0318] As an example, FIGS. 12A to 12D show enlarged views of a part of the electrode 151 or the electrode 152. FIG. 12(A) shows an example in which a lattice-shaped conductive film 146 is used. At this time, the conductive film 146 is arranged so as not to overlap with a display element of the display device. This is preferable because it does not block light from the display device. The direction of the grating is the same as the arrangement of the display elements, and the period of the grating is an integer multiple of the period of the arrangement of the display elements. It is preferable to do so.

[0319] Also, in FIG. 12(B), a lattice-shaped conductive film is processed so that triangular openings are formed. 147. By adopting such a configuration, it is possible to improve the accuracy compared to the case shown in FIG. Therefore, it is possible to reduce the overall resistance.

[0320] Also, as shown in FIG. 12(C), a conductive film 14 having a pattern shape without periodicity 8. With this configuration, when the display unit of the display device is superimposed, moire is prevented. This can prevent the following from occurring.

[0321] Alternatively, conductive nanowires may be used for the electrodes 151 and 152. ) shows an example in which a nanowire 149 is used. By distributing the particles at an appropriate density so that they come into contact with each other, a two-dimensional network is formed. For example, when the average diameter of the 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, more preferably 5 nm The nanowires 149 may be Ag or less. Nanowires, metal nanowires such as Cu nanowires and Al nanowires, or carbon Nanotubes can be used. For example, Ag nanowires have a light transmittance of 89%. % or more, and a sheet resistance value of 40Ω / □ or more and 100Ω / □ or less can be achieved.

[0322] The above is a description of an example of the configuration of the touch sensor.

[0323] [Touch panel configuration example] As an example of a display device according to one embodiment of the present invention, a configuration example of a touch panel will be described below with reference to FIG. This will be explained with reference to the surface.

[0324] 13A is a perspective schematic diagram of the touch panel 100. FIG. 13B is a diagram of a pair of 1 is a perspective schematic diagram of the semiconductor device with the substrate separated. For clarity, only representative components are shown. In addition, in Fig. 13(B), only the outline of the substrate 31 is clearly shown by a broken line.

[0325] The touch panel 100 has a substrate 31 on which an input device 150 is provided and a substrate 21. The configuration of the substrate 21 side can be based on the above-mentioned configuration example 1. This can be done.

[0326] The configuration of the input device 150 can be based on the configuration example of the touch sensor described above. ) the input device 150 includes a plurality of electrodes 151, a plurality of electrodes 152, a plurality of wirings 155, a plurality of electrodes 153, a plurality of electrodes 154, a plurality of wirings 155, a plurality of electrodes 155, a plurality of electrodes 156, a plurality of electrodes 157, a plurality of electrodes 158, a plurality of electrodes 159, a plurality of electrodes 151, a plurality of wirings 1 15 shows a case where the number of wirings 156 is large.

[0327] The input device 150 may be, for example, a capacitance type touch sensor. There are various types of capacitive touch sensors, such as surface capacitive touch sensors and projected capacitive touch sensors. There are two types of methods: self-capacitance and mutual capacitance. This is preferable because it allows for point detection. In the following, a projected capacitive touch sensor is used. This section explains how to do this.

[0328] However, the present invention is not limited to this, and may be applied to detecting the proximity or contact of a detection object such as a finger or stylus. Various sensors capable of detecting a target object may be applied to the input device 150.

[0329] The touch panel 100 shown in FIGS. 13(A) and 13(B) has an input device 150 provided on a substrate 31. The wiring 155 and the wiring 156 of the input device 150 are connected to the input device 150 via a connection part 169. It is electrically connected to the FPC 42 connected to the substrate 21 side.

[0330] By adopting such a configuration, the FPC connected to the touch panel 100 is located on one substrate side ( In this case, it can be arranged only on the substrate 21 side. However, as shown in Figures 13(A) and 13(B), The panel 100 is provided with one FPC 42, and the FPC 42 is connected to the board 21 side and the board 31 side. Supplying signals to both can reduce the number of components and simplify the configuration. preferable.

[0331] The connection portion 169 is configured to have a connection body having anisotropic conductivity, for example. The connector may be, for example, a conductive particle. The particles used are organic resin or silica particles whose surfaces are coated with a metal material. Nickel or gold is preferably used as the metal material because it can reduce contact resistance. In addition, nickel is coated with gold, and two or more metal materials are coated in layers. It is preferable to use particles. Also, a material that undergoes elastic or plastic deformation is used as the connector. In this case, the conductive particles may be crushed in the vertical direction. This increases the contact area between the connector and the conductive layer electrically connected thereto, thereby reducing the contact resistance. This not only reduces resistance but also prevents problems such as poor connections.

[0332] The connecting body is covered with an adhesive layer 141 (not shown) that bonds the substrate 21 and the substrate 31. For example, after applying a paste or the like that will become the adhesive layer 141, The connecting material may be dispersed on the connecting portion 169. The connecting portion 169 is disposed on the portion where the adhesive layer 141 is to be provided. By placing the adhesive layer 141 on the display unit 32, the adhesive layer 141 is also placed on the display unit 32 (also called a solid sealing structure). In addition, for example, a light emitting device with a hollow sealing structure, a liquid crystal display device, etc., the adhesive layer 141 is Any configuration that uses the same method can be applied.

[0333] Also, in Figures 13(A) and 13(B), unlike Figure 1(A), IC168 is mounted on FPC42. In this case, the IC 168 has the function of driving the input device 150. Alternatively, an IC for driving the input device 150 may be mounted on the board 21, the board 31, or the FPC. 42, etc. may be provided separately.

[0334] [Cross-sectional structure example] Next, an example of the cross-sectional structure of the touch panel 100 will be described. 14 is a cross-sectional schematic diagram of the substrate 31 rather than the adhesive layer 141, as compared to FIG. The main difference is the side configuration.

[0335] On the surface of the substrate 31 facing the substrate 21, an insulating layer 161, an insulating layer 162, an insulating layer 163, and an insulating layer The insulating layer 161 and the insulating layer 162 are laminated together. Between the insulating layer 162 and the insulating layer 163, the electrodes 151, 152, etc. are provided. The bridge electrode 153 is provided between the insulating layer 163 and the insulating layer 164. The surface of the insulating layer 164 on the adhesive layer 141 side is provided with the colored layer 131a, the colored layer 131b, and the light-shielding layer 131b. 132 and others are provided.

[0336] FIG. 14 clearly shows the intersection of the electrode 151 and the electrode 152. The bridge electrode 153 , the electrode 152 is electrically connected to the two electrodes 151 sandwiching the electrode 152 through an opening provided in the insulating layer 163. is connected to.

[0337] The electrodes 151 and 152 are provided at positions overlapping the light-shielding layer 132. 4 shows an example in which the electrode 151 is arranged so as not to overlap the light emitting element 40. In other words, the electrode 151 has a mesh shape with openings that overlap the light emitting element 40. With this configuration, the electrode 151 is disposed on the path of the light emitted by the light emitting element 40. Therefore, there is substantially no decrease in brightness due to the placement of the electrode 151, and visibility is high. The electrode 152 has a similar structure. It can be concluded that

[0338] In addition, since the electrodes 151 and 152 do not overlap the light emitting element 40, the resistance to these electrodes is relatively low. Therefore, the electrodes 151 and 152 can be made of a light-transmitting conductive material. The sensitivity of the touch sensor can be improved compared to when a conductive material is used.

[0339] 14, the substrate 3 is located closer to the electrode 151 and the electrode 152 (and the bridge electrode 153). 1, a light-shielding layer 133 is provided on the side 1 so as to overlap these. Therefore, even when a metal material is used for the electrode 151, etc., the reflection of external light can be suppressed. Therefore, a touch panel with higher visibility can be realized. Although an example in which two light-shielding layers 133 are provided has been shown, a configuration in which only one of them is provided may be used. Good too.

[0340] In addition, the polarizing plate 130 on the substrate 31 is not provided, and the substrate 31 is not moved by a finger or a stylus. It may be used as a substrate that comes into direct contact with an object. In this case, a protective layer (ceramic The protective layer is preferably made of, for example, silicon oxide or aluminum oxide. , yttrium oxide, yttria-stabilized zirconia (YSZ), and other inorganic insulating materials are used. Further, tempered glass may be used for the substrate 31. The tempered glass is made of ion-exchanged glass. Physical or chemical treatments such as exchange and air-cooling are applied to the surface, and compressive stress is applied to the surface. The touch sensor can be attached to one side of the tempered glass, and the other side By providing this surface on the top surface of an electronic device and using it as a touch surface, the thickness of the entire device can be reduced. The size can be reduced.

[0341] As shown in FIG. 14, a light emitting element 40, a plurality of transistors, and a touch sensor are included. By disposing electrodes between the substrate 21 and the substrate 31, a touch panel with a reduced number of components can be obtained. It is possible to realize a channel.

[0342] The configuration of the touch panel 100 is not limited to this. For example, an input device 150 may be provided. The substrate may be superimposed on the display device 10 shown in FIG. 1(A) to form a touch panel. stomach.

[0343] 15, electrodes 151 and 152 constituting the touch sensor are arranged on the substrate 2 of the substrate 31. This is an example of a structure formed on the opposite side of the first side. It can be called a rule.

[0344] Electrodes 151 and 152 are formed on the substrate 31, and an insulating layer 163 is formed to cover them. Furthermore, a bridge electrode 153 is provided on the insulating layer 163.

[0345] The substrate 170 is a substrate that functions as a touch surface, and is used to mount, for example, a touch panel on an electronic device. When installed, it functions as a part of the housing or as a protective glass. 1 is bonded to the substrate 1 by an adhesive layer 165.

[0346] 15, the electrode 151 is not only overlapped with the light-shielding layer 132 but also overlapped with the light-emitting element 4. 10, an example in which the electrode 131 is also disposed in an area overlapping with the colored layer 131a, etc. The material 151 can be a material that transmits visible light. For example, a film containing metal oxide or , a film containing graphene, or a film containing metal or alloy that is thin enough to transmit visible light, etc. , can be used for the electrode 151. The same applies to the electrode 152. The ridge electrode 153 may also be made of a similar material that transmits visible light, but the bridge electrode 153 When the light-shielding layer 132 is overlapped with the bridge electrode 153 or when the area of ​​the bridge electrode 153 is extremely small, In this case, a material that blocks visible light, such as a metal or alloy, may be used.

[0347] The above is a description of an example of the cross-sectional configuration of a touch panel.

[0348] [Configuration example 3] Hereinafter, as an example of a display device according to one embodiment of the present invention, a display device including both a reflective liquid crystal element and a light-emitting element will be described. A display device (display panel) that has a transmissive mode and a reflective mode and can display in both modes. This type of display panel is called a TR-hybrid display. (Transmissive OLED and Reflective LC Hyb It can also be called a rid display.

[0349] An example of such a display panel is a liquid crystal panel having an electrode that reflects visible light, and a light emitting element. In this case, the electrode that reflects visible light is open. It is preferable that the opening and the light emitting element are arranged to overlap each other. In the through mode, the light emitting element can be driven so that light is emitted from the light emitting element through the opening. In addition, a transistor for driving a liquid crystal element and a transistor for forming a light emitting element are It is preferable that the light emitting element and the liquid crystal element are arranged on the same plane. It is preferable that the layers are laminated with an intervening layer.

[0350] Such display panels are displayed in reflective mode when outdoors or in other brightly lit areas. This allows for extremely low power consumption operation. In this case, by displaying in transmissive mode, the image can be displayed with optimal brightness. Furthermore, by displaying in both transmissive and reflective modes, it is possible to display in extremely bright ambient light. Compared to conventional display panels, it consumes less power and has higher contrast, even in bright places. It is possible to display

[0351] [Configuration example] 16A is a block diagram showing an example of the configuration of the display device 200. The display device 20 has a plurality of pixels 210 arranged in a matrix on the display unit 32. 00 includes a circuit GD and a circuit SD. Also, a plurality of pixels 210 arranged in a direction R, A plurality of wirings G1, a plurality of wirings G2, and a plurality of wirings ANO electrically connected to the circuit GD, and It also has a plurality of wirings CSCOM, a plurality of pixels 210 arranged in a direction C, and a circuit SD The semiconductor device has a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the semiconductor device.

[0352] The pixel 210 has a reflective liquid crystal element and a light emitting element. The substrate and the light-emitting element have overlapping portions.

[0353] FIG. 16(B1) shows a structural example of the conductive layer 191 included in the pixel 210. The conductive layer 191 is The conductive layer 191 functions as a reflective electrode of the liquid crystal element in the pixel 210. 251 is provided.

[0354] In FIG. 16(B1), the light emitting element 40 located in the area overlapping with the conductive layer 191 is indicated by a broken line. The light emitting element 40 is disposed so as to overlap the opening 251 of the conductive layer 191. As a result, the light emitted by the light emitting element 40 is emitted to the display surface side through the opening 251.

[0355] In FIG. 16(B1), pixels 210 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 16(B1), in two pixels adjacent to each other in the direction R, the opening 2 51 are preferably provided at different positions on the conductive layer 191 so as not to be arranged in a line. This allows the two light emitting elements 40 to be spaced apart, and the light emitted by the light emitting elements 40 The phenomenon (also called crosstalk) that the light from the adjacent pixel 210 is incident on the colored layer of the adjacent pixel 210 is prevented. In addition, two adjacent light emitting elements 40 can be arranged apart from each other. Therefore, even when the EL layer of the light emitting element 40 is separately formed using a shadow mask or the like, This makes it possible to realize a display device with high resolution.

[0356] Alternatively, an arrangement such as that shown in FIG. 16(B2) may be used.

[0357] If the ratio of the total area of ​​the openings 251 to the total area of ​​the non-openings is too large, the liquid crystal element may not be used. In addition, the ratio of the total area of ​​the openings 251 to the total area of ​​the non-openings If the value is too small, the display using the light emitting element 40 will be dark.

[0358] Furthermore, if the area of ​​the opening 251 provided in the conductive layer 191 that functions as a reflective electrode is too small, Therefore, the efficiency of light extracted from the light emitted by the light emitting element 40 decreases.

[0359] The shape of the opening 251 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. It may also be in the form of thin stripes, slits, or a checkered pattern. The apertures 251 may be arranged close to adjacent pixels. Preferably, the apertures 251 are arranged so that the same color is It is placed close to other pixels to be displayed, which helps to suppress crosstalk.

[0360] [Circuit configuration example] 17 is a circuit diagram showing a configuration example of a pixel 210. In FIG. 17, two adjacent pixels It shows 210.

[0361] The pixel 210 includes a switch SW1, a capacitance element C1, a liquid crystal element 60, a switch SW2, a transistor The pixel 210 includes a transistor M, a capacitance element C2, a light emitting element 40, etc. G1, wiring G2, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically connected 17, the wiring VCOM1 electrically connected to the liquid crystal element 60, A wiring VCOM2 electrically connected to the light emitting element 40 is shown.

[0362] FIG. 17 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0363] The switch SW1 has a gate connected to the wiring G1 and a source or drain connected to the wiring S 1, and the other of the source or drain is connected to one electrode of the capacitance element C1 and the liquid crystal element 6 The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 60 is connected to the wiring VCOM1.

[0364] The switch SW2 has a gate connected to the wiring G2 and a source or drain connected to the wiring G3. The other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the source of the transistor M. The transistor M is connected to either the source or drain of the transistor M and the wiring ANO. The other of the drains is connected to one electrode of the light emitting element 40. The electrode is connected to the wiring VCOM2.

[0365] In FIG. 17, a transistor M has two gates that sandwich a semiconductor, and these are connected to form a This increases the current that the transistor M can pass. It is possible.

[0366] A signal that controls the switch SW1 to be in a conductive state or a non-conductive state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal in the liquid crystal element 60 can be given. M can be given a predetermined potential.

[0367] A signal that controls the switch SW2 to be in a conductive state or a non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 40 to emit light occurs between the wiring VCOM2 and the wiring ANO. The wiring S2 can be connected to a potential that controls the conduction state of the transistor M. A signal can be given to

[0368] In the pixel 210 shown in FIG. 17, when a reflective mode display is performed, for example, the wiring G1 and the wiring G2 are The liquid crystal element 60 is driven by a signal applied to the line S1 and optically modulated to display the image. In addition, when displaying in the transmissive mode, the signal given to the wiring G2 and the wiring S2 is The light emitting element 40 can be driven in either mode to emit light for display. When the signal is applied to the wiring G1, the wiring G2, the wiring S1, and the wiring S2, It can be driven more.

[0369] [Example of cross-sectional configuration of display device] FIG. 18 shows a schematic cross-sectional view of the display device 200.

[0370] The display device 200 has an insulating layer 220 between the substrate 21 and the substrate 31. and the insulating layer 220, the light-emitting element 40, the transistor 205, the transistor 206, the color The liquid crystal element 60, the colored layer 13, etc. are disposed between the insulating layer 220 and the substrate 31. 1, structure 11, etc.

[0371] The substrate 21 and the insulating layer 220 are bonded together with an adhesive layer 141. The edge layer 220 is attached with an adhesive layer 142 that seals the liquid crystal.

[0372] The liquid crystal element 60 is a reflective liquid crystal element. The liquid crystal element 60 is made up of a conductive layer 192, a liquid crystal 193, and a conductive layer 194. and a conductive layer 194. The conductive layer 191 functions as a reflective electrode of the liquid crystal element 60. The conductive layer 191 has an opening 251. The conductive layer 192 contains a material that transmits visible light. .

[0373] The light emitting element 40 is a bottom emission type light emitting element. A laminated structure in which a conductive layer 111, an EL layer 112, and a conductive layer 113 are laminated in this order from the side of 20 is formed. The conductive layer 113 contains a material that reflects visible light, and the conductive layer 111 contains a material that transmits visible light. The light emitted by the light emitting element 40 passes through the colored layer 134, the insulating layer 220, the opening 251, the conductive layer 252, the insulating layer 220, the conductive layer 252 ... The light is emitted to the substrate 31 side through the conductive layer 192 and the like.

[0374] Furthermore, a structure 12 is provided on an insulating layer 216 that covers the end portion of the conductive layer 111 . The structure 12 serves as a spacer that prevents the insulating layer 220 and the substrate 21 from coming closer than necessary. It should be noted that the structure 12 does not have to be provided if it is not necessary.

[0375] One of the source and drain of the transistor 205 is electrically connected to the conductive layer 111 of the light-emitting element 40. For example, transistor 205 is electrically connected to transistor M in FIG. handle.

[0376] One of the source and drain of the transistor 206 is connected to the conductive layer 19 through a terminal portion 207. 1 and the conductive layer 192. The terminal portion 207 is The conductive layers provided on both sides of the insulating layer 220 are connected to each other through the openings provided in the insulating layer 220. For example, the transistor 206 functions as a switch in FIG. Compatible with SW1.

[0377] A terminal portion 204 is provided in an area of ​​the substrate 21 that does not overlap with the substrate 31. 04 electrically connects the conductive layers provided on both sides of the insulating layer 220, similar to the terminal portion 207. The upper surface of the terminal portion 204 is made of a conductive layer obtained by processing the same conductive film as the conductive layer 192. As a result, the terminal portion 204 and the FPC 42 are electrically connected via the connection layer 242. can be effectively connected.

[0378] A colored layer 131 and a light-shielding layer 132 are provided on the substrate 21 side of the substrate 31. An insulating layer 195 is provided to cover the layer 131 and the light-shielding layer 132. The insulating layer 195 is The conductive layer 194 is provided on the substrate 21 side of the insulating layer 195. It is being used.

[0379] In addition, a connection portion 252 is provided in a portion of the area where the adhesive layer 142 is provided. In the connecting portion 252, a conductive layer obtained by processing the same conductive film as the conductive layer 192 and a conductive layer 194 are electrically connected by the connector 243. A signal input from the FPC 42 connected to the substrate 21 side is input to the conductive layer 194 formed on the side. Alternatively, the potential can be supplied via connection 252 .

[0380] The structure 11 is provided between the conductive layer 192 and the conductive layer 194. The structure 11 is This has the function of maintaining the cell gap of the crystal element 60. Here, the structure is the opposite of that shown in FIG. In this example, the body 11 is formed on the substrate 31 side. The structure 11 is formed at a position overlapping the recess. The surface (part of the surface located on the display surface side) is located above the lower surface of the colored layer 131. Therefore, it is possible to reduce the distance between the substrate 21 and the substrate 31, and improve the viewing angle characteristics. It can be improved.

[0381] Although not shown here, the conductive layer 194 and the liquid crystal 193, and the conductive layer 192 and the liquid crystal An alignment film for controlling the alignment of the liquid crystal 193 may be provided between the liquid crystals 193. A part of the alignment film may be provided to cover the surface of the structure 11 .

[0382] An example of a method for manufacturing the display device 200 will be described. On the plate, a conductive layer 192, a conductive layer 191, and an insulating layer 220 are formed in this order, and then a transistor is formed. After forming the light emitting element 40 and the like, the substrate 21 and the support substrate are attached using the adhesive layer 141. Then, the interfaces between the release layer and the insulating layer 220 and the release layer and the conductive layer 192 are bonded together. The support substrate and the release layer are removed by peeling. A substrate 31 is prepared on which a light-shielding layer 132, a structure 11, etc. are formed in advance. The liquid crystal 193 is dropped onto the substrate 21 or the substrate 31, and the substrate 21 and the substrate 31 are bonded together by the adhesive layer 142. By combining these, the display device 200 can be produced.

[0383] The peeling layer is made of a material that peels off at the interface between the insulating layer 220 and the conductive layer 192. In particular, a layer containing a high melting point metal material such as tungsten can be used as the release layer. Layers containing oxides of the metal materials are stacked, and silicon nitride is used as the insulating layer 220 on the peeling layer. It is preferable to use a multi-layer structure of silicon, silicon oxynitride, silicon nitride oxide, etc. When a high melting point metal material is used for the release layer, the temperature for forming the subsequent layers is increased. This allows the concentration of impurities to be reduced, thereby realizing a highly reliable display device.

[0384] The conductive layer 192 may be made of a metal oxide, a metal nitride, or a low-resistance oxide semiconductor. When an oxide semiconductor is used, it is preferable to use an oxide of hydrogen, boron, lithium, or the like. At least one of the concentrations of silicon, nitrogen, and other impurities and the amount of oxygen vacancies is The conductive layer 192 may be made of a material having a higher thermal conductivity than the semiconductor layer used for the capacitor.

[0385] The above is the explanation of configuration example 3.

[0386] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0387] (Embodiment 2) In this embodiment, an input device (touch sensor) that can be applied to the display device of one embodiment of the present invention will be described. An example of a driving method will be described.

[0388] FIG. 19A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 601 and a current detection circuit 602 are shown. In (A), the electrode 621 to which the pulse is applied and the electrode 622 to which the change in the current is detected are The number of electrodes is shown as six, namely, wires X1-X6 and wires Y1-Y6. 19A, the electrode 621 and the electrode 622 overlap each other. Alternatively, the capacitance 603 formed by arranging the electrode 621 and the electrode 622 close to each other is The functions of electrode 621 and electrode 622 may be interchangeable.

[0389] For example, the electrode 151 illustrated in the first embodiment corresponds to one of the electrodes 621 and 622. The electrode 152 corresponds to the other of the electrode 621 and the electrode 622 .

[0390] The pulse voltage output circuit 601 inputs pulse voltages to the wirings X1-X6 in order, for example. The current detection circuit 602 detects the current flowing through each of the wires Y1 to Y6, for example. This is a circuit for detecting this.

[0391] When a pulse voltage is applied to one of the wirings X1-X6, a voltage that forms a capacitance 603 is generated. An electric field is generated between the electrode 621 and the electrode 622, and a current flows through the electrode 622. A part of the electric field generated in the sensor is shielded by the proximity or contact of a detected object such as a finger or pen. As a result, the magnitude of the current flowing through electrode 622 changes. Change.

[0392] For example, when there is no proximity or contact of the object to be detected, the magnitude of the current flowing through the wires Y1-Y6 is The value of the capacitance 603 corresponds to the capacitance of the capacitor. When part of the field is shielded, the magnitude of the current flowing through the wires Y1-Y6 decreases. This can be used to detect the proximity or contact of an object to be sensed.

[0393] The current detection circuit 602 detects the (temporal) integral value of the current flowing through one wire. In this case, the detection may be performed using an integrating circuit or the like. In this case, for example, the current may be converted into a voltage, and the peak value of the voltage may be detected. The value may be detected.

[0394] FIG. 19B shows input and output waves in the mutual capacitance type touch sensor shown in FIG. In FIG. 19(B), the detection of each matrix in one sensing period is In addition, in FIG. 19(B), when the contact or proximity of the object to be detected is not detected, There are two cases: when the sensor detects contact or proximity of the object to be detected (when the sensor is not touched) and when the sensor detects contact or proximity of the object to be detected (when the sensor is touched). Here, for the wires Y1-Y6, the magnitude of the detected current is The corresponding voltage waveforms are shown.

[0395] As shown in FIG. 19(B), pulse voltages are applied to the wires X1-X6 in sequence. In response, current flows through the wires Y1-Y6. In response to the change in voltage, the same current flows through the wires Y1-Y6, so The output waveforms of each are similar. On the other hand, when touched, the following waveforms are output from the wires Y1-Y6: The current flowing through the wiring located in the vicinity of or in contact with the object to be detected is reduced, as shown in Figure 1. As shown in 9(B), the output waveform changes.

[0396] In FIG. 19(B), the object to be detected is located at or near the intersection of the wire X3 and the wire Y3. This shows an example where the objects are in contact or close proximity to each other.

[0397] In this way, in the mutual capacitance method, the electric field generated between a pair of electrodes is shielded, resulting in By detecting the change in the current, it is possible to obtain position information of the object to be detected. When the detection sensitivity is high, the object to be detected is far from the detection surface (for example, the surface of a touch panel). Even if the object is not detected, its coordinates can be detected.

[0398] In addition, in the case of a touch panel, the display period of the display unit and the sensing period of the touch sensor By using a driving method that shifts the detection sensitivity of the touch sensor, For example, if one frame period of display is divided into a display period and a sensing period, In this case, it is preferable to provide two or more sensing periods in one frame period. By increasing the frequency of sensing, the detection sensitivity can be further improved.

[0399] The pulse voltage output circuit 601 and the current detection circuit 602 are, for example, integrated circuits (ICs) on a single chip. It is preferable that the IC is formed in the touch panel. It is preferable that the terminal is mounted on a substrate inside the housing of an electronic device. When using a touch panel, the parasitic capacitance increases at the bent part, increasing the effect of noise. Therefore, it is recommended to use an IC that uses a driving method that is less susceptible to noise. For example, it is preferable to apply a driving method that increases the signal-to-noise ratio (S / N ratio). It is preferable to use an IC that has a

[0400] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0401] (Embodiment 3) In this embodiment mode, the transistors described in the above embodiment modes can be replaced with An example of a transistor that can be used will be described with reference to the drawings.

[0402] The display device of one embodiment of the present invention includes a bottom-gate transistor and a top-gate transistor. The present invention can be implemented using various types of transistors, such as a transistor having a MOSFET, ... and a transistor having a MOSFET. The semiconductor layer material and transistor structure can be easily replaced to suit the production line. It is possible.

[0403] [Bottom-gate transistor] FIG. 20(A1) shows a channel protection transistor, which is a type of bottom gate transistor. 20(A1) is a cross-sectional view of a transistor 810. In FIG. 20(A1), the transistor 810 is The transistor 810 is formed on a substrate 771 with an insulating layer 772 formed on the substrate 771. The semiconductor layer 742 is formed on the electrode 746 with an insulating layer 726 interposed therebetween. The electrode 746 can function as a gate electrode. The insulating layer 726 can function as a gate insulating layer. It can function as such.

[0404] In addition, an insulating layer 741 is provided over a channel formation region of the semiconductor layer 742. Electrodes 744a and 744b are provided on the insulating layer 726 in contact with a portion of the insulating layer 742. Electrode 744a can function as either a source electrode or a drain electrode. , which can function as the other of the source electrode and the drain electrode. A portion of the electrode 744 b is formed on the insulating layer 741 .

[0405] The insulating layer 741 can function as a channel protection layer. By providing the insulating layer 1, the insulating layer 100 of the semiconductor layer 742 generated when the electrodes 744a and 744b are formed can be effectively prevented. Therefore, when the electrodes 744a and 744b are formed, the semiconductor This can prevent the channel formation region of the layer 742 from being etched. According to this method, a transistor with good electrical characteristics can be realized.

[0406] The transistor 810 has an insulating layer 744 a, an insulating layer 744 b, and an insulating film 741. It has an edge layer 728 and an insulating layer 729 on top of the insulating layer 728 .

[0407] For example, the insulating layer 772 may be formed using the same material and method as the insulating layer 722 and the insulating layer 705. Note that the insulating layer 772 may be a stack of a plurality of insulating layers. For example, the semiconductor layer 742 is formed using the same material and method as the semiconductor layer 708. The semiconductor layer 742 may be a stack of a plurality of semiconductor layers. For example, electrode 746 can be formed using similar materials and methods as electrode 706. The electrode 746 may be a laminate of multiple conductive layers. The insulating layer 6 can be formed using the same material and method as the insulating layer 707. Layer 726 may be a stack of multiple insulating layers. The electrode 744b is formed using the same material and method as the electrode 714 or the electrode 715. The electrode 744a and the electrode 744b may be a laminate of multiple conductive layers. For example, the insulating layer 741 may be formed using the same material and method as the insulating layer 726. The insulating layer 741 may be a stack of multiple insulating layers. For example, the insulating layer 728 can be formed using the same material and method as the insulating layer 710. The insulating layer 728 may be a laminate of multiple insulating layers. The insulating layer 29 can be formed using the same material and method as the insulating layer 711. The edge layer 729 may be a stack of multiple insulating layers.

[0408] The electrodes, semiconductor layers, insulating layers, and the like constituting the transistor disclosed in this embodiment are the same as those of other It can be formed using the materials and methods disclosed in the embodiments.

[0409] When an oxide semiconductor is used for the semiconductor layer 742, the electrode 744a and the electrode 744b At least in the area in contact with the semiconductor layer 742, oxygen is taken from a part of the semiconductor layer 742, and oxygen deficiency is formed. It is preferable to use a material that can generate oxygen vacancies in the semiconductor layer 742. The carrier concentration in the region where this occurs increases, and the region becomes n-type, forming an n-type region (n + layer) Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, and oxygen vacancies occur. Examples of materials that can generate this include tungsten and titanium. Cut.

[0410] The source and drain regions are formed in the semiconductor layer 742, forming an electrode 744. Therefore, the contact resistance between the electrode 744a and the semiconductor layer 742 can be reduced. To improve the electrical characteristics of transistors, such as field effect mobility and threshold voltage. can be done.

[0411] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744 a, and between the semiconductor layer 742 and the electrode 744b, an n-type semiconductor or a p-type semiconductor is It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. , can function as the source or drain region of a transistor.

[0412] The insulating layer 729 has a function of preventing or reducing the diffusion of impurities into the transistor from the outside. It is preferable to form the insulating layer 729 using a material having the insulating properties. It can also be omitted.

[0413] Note that in the case where an oxide semiconductor is used for the semiconductor layer 742, the insulating layer 729 is formed before or after the insulating layer 729 is formed. Heat treatment may be performed after the formation of the insulating layer 729, or before or after the formation of the insulating layer 729. The oxygen contained in the insulating layer 729 and other insulating layers is diffused into the semiconductor layer 742, and the semiconductor layer The oxygen vacancies in the insulating layer 742 can be filled. Alternatively, the insulating layer 729 can be formed while being heated. By doing so, oxygen vacancies in the semiconductor layer 742 can be compensated for.

[0414] Generally, the CVD method is a plasma CVD (PECVD) method that uses plasma. sma Enhanced CVD method, and thermal CVD (TCVD) Furthermore, depending on the source gas used, it can be classified into metal CVD (MCV) and other methods. D: Metal CVD) method, Metal Organi CVD (MOCVD) method c CVD) method.

[0415] Generally, the evaporation method includes resistance heating evaporation, electron beam evaporation, MBE (Molecular Beam Evaporation), r Beam Epitaxy) method, PLD (Pulsed Laser Deposit) tion) method, IBAD(Ion Beam Assisted Deposition) ) method, ALD (Atomic Layer Deposition) method, etc. .

[0416] The plasma CVD method can produce high-quality films at relatively low temperatures. When using a deposition method that does not use plasma during deposition, damage occurs to the surface to be deposited. This makes it difficult to form a film with few defects.

[0417] Generally, the sputtering method is classified into DC sputtering method, magnetron sputtering method, sputtering method, RF sputtering method, ion beam sputtering method, ECR (Electron Cyclotron Resonance) Cyclotron Resonance sputtering method, facing targets It can be classified into methods such as sputtering.

[0418] In the facing target sputtering method, the plasma is confined between the targets. This reduces plasma damage to the substrate. This allows the incident angle of sputtering particles onto the substrate to be shallow, improving step coverage. It can be increased.

[0419] The transistor 811 shown in FIG. 20A2 has a back gate electrode over the insulating layer 729. The transistor 810 differs from the transistor 810 in that it has an electrode 723 that can function as a It can be made of the same materials and methods as pole 746 .

[0420] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the gate electrode. The back gate electrode can be made to function in the same manner as the gate electrode. Alternatively, the potential may be a ground potential (GND potential) or any other potential. By changing the potential of the gate electrode independently of the potential of the gate electrode, the transistor The threshold voltage can be varied.

[0421] Both the electrode 746 and the electrode 723 can function as gate electrodes. Therefore, the insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 is provided between the insulating layer 728 and the insulating layer 729. It is okay to do so.

[0422] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "bar For example, in the transistor 811, the electrode 723 is called a "gate electrode." When referring to "electrodes," the electrode 746 is referred to as a "back gate electrode." When the transistor 811 is used as a top gate electrode, In addition, either the electrode 746 or the electrode 723 can be considered as a type of The first gate electrode may be referred to as the "first gate electrode" and the other as the "second gate electrode."

[0423] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 sandwiched therebetween, the electrode 7 By setting the potential of the electrode 46 and the electrode 723 at the same potential, carriers flow in the semiconductor layer 742. The area becomes larger in the film thickness direction, and the amount of carrier movement increases. The on-state current of the transistor 811 increases and the field-effect mobility also increases.

[0424] Therefore, the transistor 811 is a transistor having a large on-current relative to its area. That is, the area occupied by the transistor 811 is According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0425] In addition, the gate electrode and back gate electrode are formed from a conductive layer, so that the external The function of preventing the electric field generated by the The back gate electrode has a function of shielding the electric field against vapors and other harmful substances. By forming the semiconductor layer in a thin film and covering it with a back gate electrode, the electric field shielding function can be improved. do.

[0426] In addition, the electrode 746 and the electrode 723 each have the function of shielding an external electric field. Therefore, charges such as charged particles generated on the insulating layer 772 side or above the electrode 723 are transferred to the semiconductor layer This does not affect the channel formation region of 742. As a result, stress tests (e.g., applying load to the gate) GBT (Gate Bias-Temperature) stress test In addition, the on-current starts to flow depending on the magnitude of the drain voltage. This can reduce the phenomenon of the gate voltage (start-up voltage) changing. This effect occurs when electrode 746 and electrode 723 are at the same potential or at different potentials. .

[0427] The BT stress test is a type of accelerated test that detects the transitions that occur during long-term use. It is possible to evaluate the change in characteristics (aging) of a resistor in a short time. The amount of change in the threshold voltage of a transistor before and after testing is an important indicator for examining reliability. The smaller the threshold voltage fluctuation, the more reliable the transistor. do.

[0428] Also, the electrode 746 and the electrode 723 are provided, and the electrode 746 and the electrode 723 are at the same potential. By doing so, the amount of variation in threshold voltage is reduced. At the same time, the variation in electrical characteristics is reduced.

[0429] In addition, a transistor with a back gate electrode has a positive charge applied to the gate +GB The change in threshold voltage before and after the T-stress test was also Smaller than Zysta.

[0430] In addition, by forming the back gate electrode using a conductive film having a light-shielding property, This prevents light from entering the semiconductor layer from the electrode side, thereby preventing light degradation of the semiconductor layer. This prevents the deterioration of electrical characteristics, such as a shift in the threshold voltage of a transistor. do.

[0431] According to one embodiment of the present invention, a highly reliable transistor can be provided. As a result, a highly reliable semiconductor device can be realized.

[0432] FIG. 20(B1) shows a channel protection transistor, which is one of bottom gate transistors. 8 shows a cross-sectional view of transistor 820. Transistor 820 is similar to transistor 810. 7, except that an insulating layer 741 covers the edge of the semiconductor layer 742. In addition, a portion of the insulating layer 741 overlapping the semiconductor layer 742 is selectively removed to form an opening. In this case, the semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a part of the insulating layer 741 overlapping the semiconductor layer The insulating layer 741 overlaps the channel forming region and is electrically connected to the electrode 744b. This region can function as a channel protection layer.

[0433] The transistor 821 shown in FIG. 20B2 has a back gate electrode over the insulating layer 729. The transistor 820 differs from the transistor 820 in that it has an electrode 723 that can function as a transistor.

[0434] By providing the insulating layer 741, the semiconductor generated when the electrodes 744a and 744b are formed can be prevented. Therefore, the formation of the electrode 744a and the electrode 744b can be prevented. In some cases, it is possible to prevent the semiconductor layer 742 from becoming thin.

[0435] Also, the transistors 820 and 821 are the same as the transistors 810 and 821. The distance between the electrode 744a and the electrode 746 and the distance between the electrode 744b and the electrode 744c are smaller than the distance between the electrode 744a and the electrode 746 and the electrode 744b. Therefore, the distance between the electrodes 744a and 746 is increased. In addition, the parasitic capacitance generated between the electrode 744b and the electrode 746 can be reduced. According to one aspect of the present invention, a transistor with good electrical characteristics can be realized. can.

[0436] The transistor 825 shown in FIG. 20C1 is a bottom-gate transistor. The transistor 825 is a channel-etched transistor. The electrodes 744a and 744b are formed without using the A part of the semiconductor layer 742 that is exposed when the electrode 744b is formed may be etched. On the other hand, since the insulating layer 741 is not provided, productivity of the transistor can be increased.

[0437] The transistor 826 shown in FIG. 20C2 has a back gate electrode over the insulating layer 729. The transistor 724 differs from the transistor 825 in that it has an electrode 723 that can function as a transistor.

[0438] [Top-gate transistor] FIG. 21A1 shows a transistor 830, which is a type of top-gate transistor. The transistor 830 includes a semiconductor layer 742 over an insulating layer 772. An electrode 744a in contact with a part of the semiconductor layer 742 and an insulating layer 772 are provided on the semiconductor layer 742 and the insulating layer 772. and an electrode 744b in contact with a part of the semiconductor layer 742. An insulating layer 726 is provided over the electrode 744b, and an electrode 746 is provided over the insulating layer 726.

[0439] Transistor 830 is connected between electrode 746 and electrode 744a, and between electrode 746 and electrode 744b. Since the electrodes 746 and 744b do not overlap, the parasitic capacitance between the electrodes 746 and 744a, In addition, the parasitic capacitance occurring between the electrode 746 and the electrode 744b can be reduced. After forming the electrode 746, the impurity 755 is introduced into the semiconductor layer using the electrode 746 as a mask. By introducing the ions into the semiconductor layer 742, the ions are self-aligned in the semiconductor layer 742. An impurity region can be formed (see FIG. 21(A3)). A transistor with good electrical characteristics can be realized.

[0440] The impurity 755 is introduced by an ion implantation device, an ion doping device, or a plasma This can be done using a processing device.

[0441] The impurity 755 may be, for example, at least one of Group 13 elements or Group 15 elements. When an oxide semiconductor is used for the semiconductor layer 742, one kind of element can be used. contains at least one element selected from the group consisting of rare gases, hydrogen, and nitrogen as impurities 755. It is also possible to use

[0442] The transistor 831 shown in FIG. 21A2 has an electrode 723 and an insulating layer 727. The transistor 831 is formed on an insulating layer 772. The electrode 723 has an insulating layer 727 formed thereon. Therefore, the insulating layer 727 can function as a back gate electrode. The insulating layer 727 can function as a protective layer. It can be formed more easily.

[0443] Like transistor 811, transistor 831 has a large on-state current relative to its area. In other words, for the required on-current, the transistor According to one embodiment of the present invention, the area occupied by the transistor 831 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0444] The transistor 840 illustrated in FIG. 21B1 is a top-gate transistor. The transistor 840 is formed by forming the electrodes 744a and 744b. The transistor 830 differs from the transistor 830 in that a dielectric layer 742 is formed. The transistor 841 has an electrode 723 and an insulating layer 727. In the transistor 840 and the transistor 841, the semiconductor layer 74 A part of the semiconductor layer 742 is formed on the electrode 744a, and another part of the semiconductor layer 742 is formed on the electrode 744b. It is done.

[0445] Like transistor 811, transistor 841 has a large on-state current relative to its area. In other words, for the required on-current, the transistor According to one embodiment of the present invention, the area occupied by the transistor 841 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0446] The transistor 842 illustrated in FIG. 22A1 is a top-gate transistor. The transistor 842 is formed by forming the insulating layer 729 and then The transistor 830 and the transistor 840 differ in that the electrode 744b is formed. The electrodes 744a and 744b are semi-conductors formed in the openings in the insulating layers 728 and 729. It is electrically connected to the conductor layer 742 .

[0447] Also, a part of the insulating layer 726 that does not overlap with the electrode 746 is removed, and the electrode 746 and the remaining insulating layer 726 are separated. Impurities 755 are introduced into the semiconductor layer 742 using the layer 726 as a mask, thereby forming a semiconductor Impurity regions can be formed in a self-aligned manner in layer 742 ( 22(A3)). In the transistor 842, the insulating layer 726 does not extend beyond the edge of the electrode 746. When the impurity 755 is introduced into the semiconductor layer 742, the semiconductor layer 74 The impurity concentration in the region where the impurity 755 is introduced through the insulating layer 726 of the second insulating layer 726 is The area adjacent to the electrode 746 is smaller than the area into which the impurity 755 is introduced without passing through the electrode 746. A LDD (Lightly Doped Drain) region is formed in the semiconductor layer 742. is formed.

[0448] The transistor 843 shown in FIG. 22A2 has the electrode 723. 42. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 overlaps with the semiconductor layer 742 with the insulating layer 772 interposed therebetween. It can function.

[0449] In addition, the transistor 844 shown in FIG. 22B1 and the transistor 845 shown in FIG. 22B2 As in the case of the sta 845, the insulating layer 726 in the area not overlapping with the electrode 746 may be entirely removed. In addition, the transistor 846 shown in FIG. 22C1 and the transistor 848 shown in FIG. 22C2 The insulating layer 726 may remain, as may the sta 847.

[0450] The transistors 842 to 847 are also formed by forming the electrode 74 after forming the electrode 746. 6 as a mask, an impurity 755 is introduced into the semiconductor layer 742, and the semiconductor layer 74 According to one aspect of the present invention, an impurity region can be formed in a self-aligned manner in the semiconductor substrate. A transistor with good characteristics can be realized. A highly integrated semiconductor device can be realized.

[0451] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0452] (Fourth embodiment) In this embodiment, a display module and an electronic device including the display device of one embodiment of the present invention will be described. This will be explained with reference to the drawings.

[0453] The display module 8000 shown in FIG. 23 includes an upper cover 8001 and a lower cover 8002. Between them, the touch panel 8004 connected to the FPC 8003, the frame 8009, and the printer It has a power board 8010 and a battery 8011.

[0454] A display panel, a touch panel, or a touch panel module according to an embodiment of the present invention may include, for example, For example, it can be used for the touch panel 8004.

[0455] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the touch panel 8004. The shape and dimensions can be changed as needed.

[0456] The touch panel 8004 is a resistive or capacitive touch panel. In addition, the opposing substrate (sealing substrate) of the touch panel 8004 can be used by overlapping it with the It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel of the display 4 to create an optical touch panel.

[0457] In addition, when a transmissive or semi-transmissive liquid crystal element is used, the touch panel 8004 A backlight may be provided between the frames 8009. The backlight has a light source. The light source may be disposed on the backlight, or may be disposed at the end of the backlight. In addition, a light diffusing plate may be used. When using a light emitting element such as a reflective panel, a backlight is provided. It may be configured without this.

[0458] The frame 8009 not only protects the touch panel 8004 but also secures the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by operation. The frame 8009 may also function as a heat sink.

[0459] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. This can be omitted if a commercial power source is used.

[0460] In addition, the Touch Panel 8004 adds components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as follows.

[0461] A display panel, a light-emitting panel, a sensor panel, a touch panel, and a touch panel according to one embodiment of the present invention Electronic equipment and lighting equipment are controlled using a control module, input device, display device, or input / output device. A curved surface can be manufactured using an input device, a display device, or an input / output device of one embodiment of the present invention. Furthermore, the input device of one embodiment of the present invention can be manufactured. By using the display device or input / output device, flexible and highly reliable electronic equipment and lighting equipment can be manufactured. Furthermore, a touch sensor can be manufactured using the input device or input / output device of one embodiment of the present invention. It is possible to manufacture electronic devices and lighting devices with improved sensor detection sensitivity.

[0462] Examples of electronic devices include television sets (also known as televisions or television receivers). (hereinafter referred to as "computer monitors"), digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, Examples include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0463] Furthermore, when the electronic device or lighting device of one embodiment of the present invention is flexible, it can be easily installed inside a house or a building. It can also be incorporated into walls or exterior walls, or along the curved surfaces of the interior or exterior of a vehicle. be.

[0464] Furthermore, the electronic device of one embodiment of the present invention may include a secondary battery and may perform contactless power transmission. It is preferable that the secondary battery can be charged using the power supply.

[0465] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion batteries such as ion-polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radio Examples include nickel-zinc batteries, lead-acid batteries, air batteries, nickel-zinc batteries, and silver-zinc batteries.

[0466] The electronic device according to one embodiment of the present invention may include an antenna. By using the battery, it is possible to display images, information, etc. on the display unit. , the antenna may be used for contactless power transfer.

[0467] 24(A) to 24(H) and 25(A) and (B) are diagrams showing electronic devices. These electronic devices are made up of a housing 5000, a display unit 5001, a speaker 5003, an LED light pump 5004, operation keys 5005 (including a power switch or an operation switch), connection terminal 5006, Sensor 5007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions to measure volume, humidity, gradient, vibration, odor or infrared), microphone 5008, etc.

[0468] FIG. 24(A) shows a mobile computer, which includes, in addition to the above, a switch 5009 , an infrared port 5010, etc.

[0469] FIG. 24(B) shows a portable image reproducing device (for example, a DVD reproducing device) equipped with a recording medium. In addition to the above, it has a second display unit 5002, a recording medium reading unit 5011, etc. It is possible.

[0470] FIG. 24(C) shows a television set, which includes a stand 5012 and other components in addition to those described above. The television device can be operated using an operation switch provided in the housing 5000. This can be done by a separate remote control device 5013. The channel and volume can be controlled by the operation keys provided on the display unit 5001. In addition, the remote control operation device 5013 can be used to operate the image displayed on the remote control device. A display unit for displaying information output from the controller 5013 may be provided.

[0471] FIG. 24(D) shows a portable gaming machine, which includes, in addition to the above, a recording medium reading unit 5011, etc.

[0472] Figure 24(E) is a digital camera with a TV receiving function, and in addition to the above, It may have a lens 5014, a shutter button 5015, an image receiving unit 5016, etc.

[0473] FIG. 24(F) shows a portable gaming machine, which, in addition to the above, has a second display unit 5002, a recording unit, It may have a medium reading unit 5011, etc.

[0474] FIG. 24(G) shows a portable television receiver, which, in addition to the above, has a function for transmitting and receiving signals. 5017, etc.

[0475] FIG. 24(H) shows a wristwatch type information terminal, which includes, in addition to the above, a band 5018, a clasp, and the like. The housing 5000 also serves as a bezel. The display unit 5001 has a non-rectangular display area. icon 5020, other icons 5021, etc. can be displayed.

[0476] Figure 25(A) shows a digital signage. Figure 25(B) shows a digital signage attached to a cylindrical pillar.

[0477] The electronic devices shown in FIGS. 24(A) to 24(H) and 25(A) and (B) are used in various For example, various information (still images, videos, text images, etc.) can be displayed. Functions that display information on the display unit, touch panel function, calendar, date or time display function, etc. function, the function to control processing by various software (programs), wireless communication function, The ability to connect to various computer networks using wired communication functions, and the ability to connect to various computer networks using wireless communication functions the function of transmitting or receiving various data, the program recorded on the recording medium, or It can have a function to read out data and display it on the display unit. In electronic devices with displays, one display is used primarily to display image information, and another The function of displaying text information mainly on one display unit, or displaying images that take parallax into account on multiple displays By displaying a stereoscopic image, the device can have the function of displaying a stereoscopic image. In electronic devices with an image unit, there are functions for taking still images, taking videos, and The function to automatically or manually correct the captured image, and to store the captured image on a recording medium (external or internal to the camera). The image capturing device may have functions such as storing the captured image in a memory (storage), displaying the captured image on a display unit, etc. Note that the electronic devices shown in FIGS. 24A to 24H and FIGS. 25A and 25B have The functions that can be implemented are not limited to these, and various other functions can be implemented.

[0478] 26(A), (B), (C1), (C2), (D), and (E) show a curved display unit 70. 7 shows an example of an electronic device having a display unit 7000. The display surface of the display unit 7000 is curved. The display can be performed along the curved display surface. It may be possible.

[0479] The display unit 7000 may include a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like according to one embodiment of the present invention. The present invention is also applicable to a display device, an input / output device, a touch panel, a display device, an input / output device, or the like. In this manner, it is possible to provide an electronic device that has a curved display portion and is highly reliable.

[0480] An example of a mobile phone is shown in FIG. 26A. A mobile phone 7100 includes a housing 7101, a display part 7000, operation button 7103, external connection port 7104, speaker 7105, microphone 7106 etc.

[0481] A mobile phone 7100 shown in FIG. 26A includes a touch sensor in a display portion 7000. All operations, such as making a call or entering text, can be performed using a finger or stylus. This can be done by touching the part 7000.

[0482] In addition, by operating the operation button 7103, the power can be turned on and off, and the display unit 7000 For example, from the email creation screen, you can change the type of image displayed. You can switch to the main menu screen.

[0483] FIG. 26B shows an example of a television device. The television device 7200 has a housing 7 The display unit 7000 is built into the housing 7201. The configuration shown supports 201.

[0484] The television device 7200 shown in FIG. 26B is operated by an operation switch provided in the housing 7201. This can be done by a separate remote control 7211 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control operation device 7211 may display information to be output from the remote control operation device 7211. The remote control 7211 may have a display unit that displays the operation keys or touch panel. The panel allows the user to operate the channel and volume, and the information displayed on the display unit 7000 You can manipulate the video.

[0485] The television device 7200 includes a receiver, a modem, and the like. It is possible to receive general television broadcasts by using a modem. By connecting to a communication network, it can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0486] Examples of portable information terminals are shown in Figures 26(C1), (C2), (D), and (E). The terminal includes a housing 7301 and a display portion 7000. Further, an operation button, an external connection port, The display unit 7000 may include a display, a speaker, a microphone, an antenna, a battery, etc. The mobile information terminal is operated by touching the display unit 700 with a finger or a stylus. This can be done by touching 0.

[0487] FIG. 26(C1) is a perspective view of the portable information terminal 7300, and FIG. 26(C2) is a perspective view of the portable information terminal 7300. 26(D) is a perspective view of the mobile information terminal 7310. FIG. FIG. 26(E) is a perspective view of the portable information terminal 7320. FIG.

[0488] The portable information terminal exemplified in this embodiment may be, for example, a telephone, a notebook, an information viewing device, or the like. Specifically, each of these functions can be used as a smartphone. The portable information terminal exemplified in this embodiment may be, for example, a mobile phone, an electronic mail It can be used for various purposes such as browsing and creating documents, playing music, communicating over the Internet, and playing computer games. Various applications can be run.

[0489] The mobile information terminals 7300, 7310, and 7320 are used for displaying characters and images. Image information can be displayed on multiple surfaces. For example, the image information shown in Figure 26(C1) and (D) can be displayed on multiple surfaces. As shown, three operation buttons 7302 are displayed on one side, and information 7303 shown as a rectangle is displayed on the other side. In Figures 26(C1) and 26(C2), information is displayed on the top of the mobile information terminal. FIG. 26(D) shows an example in which information is displayed on the side of the mobile information terminal. In addition, information may be displayed on three or more sides of the mobile information terminal. 304, information 7305, and information 7306 are displayed on different surfaces.

[0490] Examples of such information include notifications from social networking services (SNS). , display notifying you of incoming e-mails or phone calls, subject of e-mails or sender name , date and time, battery level, antenna reception strength, etc. Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0491] For example, the user of the mobile information terminal 7300 may place the mobile information terminal 7300 in the breast pocket of his / her clothes. When the item is stored, the display (information 7303 in this example) can be confirmed.

[0492] Specifically, the telephone number or name of the caller of the incoming call is stored in the mobile information terminal 7300. The display is positioned so that it can be seen from above. You can check the display and decide whether to answer the call without having to take out your phone.

[0493] 26(F) to (H) show an example of an illumination device having a curved light-emitting portion.

[0494] The light-emitting portion of each of the lighting devices shown in FIGS. 26(F) to 26(H) is a functional panel according to one embodiment of the present invention. display panel, light-emitting panel, sensor panel, touch panel, display device, or input / output device According to one aspect of the present invention, a light emitting device having a curved light emitting portion and high reliability is manufactured. High-quality lighting equipment can be provided.

[0495] The lighting device 7400 shown in FIG. 26(F) includes a light-emitting unit 7402 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0496] The light-emitting portion 7412 of the lighting device 7410 shown in FIG. 26(G) has two convexly curved portions. Therefore, the light emitting units are arranged symmetrically around the lighting device 7410. It can illuminate in all directions.

[0497] The lighting device 7420 shown in FIG. 26(H) has a light-emitting portion 7422 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7422 is focused on the front surface of the lighting device 7420. This type of lighting is suitable for illuminating a certain area. This has the effect of making it difficult to

[0498] In addition, the lighting devices 7400, 7410, and 7420 each have light emitting The light emitting part may be flexible. The light emitting part may be fixed by a member such as a plastic member or a movable frame. The light emitting surface of the light emitting part may be configured to be freely curved depending on the application.

[0499] The lighting device 7400, the lighting device 7410, and the lighting device 7420 each have an operation switch. It has a base 7401 with a switch 7403 and a light emitting unit supported by the base 7401.

[0500] Here, the illumination device in which the light-emitting unit is supported by the base is exemplified. The housing may be fixed to the ceiling or hung from the ceiling. The light surface can be curved, so the light-emitting surface can be curved concavely to brighten a specific area. The light source can be curved convexly to illuminate an entire room.

[0501] 27(A1), (A2), (B) to (I) show a display device having a flexible display unit 7001. 1 shows an example of a portable information terminal.

[0502] The display portion 7001 may be a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like, according to one embodiment of the present invention. It is manufactured using a panel, a touch panel, a display device, an input / output device, etc. For example, curvature Display devices or input / output devices that can be bent with a radius of 0.01 mm or more and 150 mm or less The display unit 7001 may be provided with a touch sensor, and the display may be touched with a finger or the like. The mobile information terminal can be operated by touching the portion 7001. Thus, it is possible to provide an electronic device that has a flexible display portion and is highly reliable.

[0503] FIG. 27(A1) is a perspective view showing an example of a portable information terminal, and FIG. 27(A2) is a perspective view showing an example of a portable information terminal. 7 is a side view showing an example of an information terminal. The mobile information terminal 7500 includes a housing 7501, a display unit 7 001, a drawer member 7502, an operation button 7503, etc.

[0504] The portable information terminal 7500 has a flexible display unit rolled up in a housing 7501. It has 7001.

[0505] In addition, the mobile information terminal 7500 can receive video signals using a built-in control unit. The portable information terminal 7500 can display the captured image on the display unit 7001. The housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be supplied directly from the outside via wires.

[0506] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in Fig. 27(A1), (A2), and (B), the mobile information terminal In this example, the operation button 7503 is arranged on the side of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface of the terminal 7500, or on the back surface.

[0507] FIG. 27B shows a mobile phone in a state where the display unit 7001 is pulled out by a pull-out member 7502. 7 shows a portable information terminal 7500. In this state, an image can be displayed on the display unit 7001. 27A1 in which a part of the display unit 7001 is rolled up, and the state of the display unit 700 27(B) in which the portable information terminal 75 is pulled out by the pull-out member 7502. For example, in the state of FIG. 27(A1), the display By hiding the rolled-up part of the display unit 7001, the mobile information terminal 7500 Power consumption can be reduced.

[0508] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001, a reinforcing frame may be provided on the side of the display unit 7001.

[0509] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is output.

[0510] 27(C) to 27(E) show an example of a foldable mobile information terminal. In the unfolded state, in Figure 27(D), from either the unfolded state or the folded state. In the other state, which is in the process of changing to the other state, the portable information terminal 760 in the folded state is shown in FIG. 27(E). The portable information terminal 7600 is highly portable when folded and The seamless, large display area provides excellent visibility.

[0511] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, the portable information The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0512] Figures 27(F) and (G) show an example of a foldable mobile information terminal. In FIG. 27(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is shown folded with the side 7001 facing outwards. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can prevent dirt and scratches.

[0513] FIG. 27(H) shows an example of a flexible portable information terminal. The device has a housing 7701 and a display portion 7001. , 7703b, speakers 7704a and 7704b as audio output means, and external connection port 7 The portable information terminal 7700 may have a flexible The battery 7709 may be mounted on the display unit 7. It may be placed overlapping with 001.

[0514] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape or twisted. For example, the display portion 7001 of the portable information terminal 7700 is It can be folded outward and used. The display unit 700 can also be used in a rolled-up state. Since the portable information terminal 7700 can be freely deformed, it can be easily carried out even if it is dropped or has the advantage that it is less likely to break even if an unintended external force is applied.

[0515] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Or, the housing 7701 can be fixed to the wall with a magnet or the like. , and can be conveniently used in a variety of situations.

[0516] FIG. 27(I) shows an example of a wristwatch-type portable information terminal. The device has a keyboard 7801, a display unit 7001, an input / output terminal 7802, an operation button 7803, etc. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. It may be placed overlapping with band 01 or band 7801.

[0517] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0518] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as auto-start, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0519] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can launch the application.

[0520] The portable information terminal 7800 can also perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0521] The portable information terminal 7800 may also have an input / output terminal 7802. If the device has 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the mobile information terminal shown in the example is performed by non-contact power transmission without using input / output terminals. You may go.

[0522] Figures 28(A), (B), and (C) show an example of a foldable wristwatch-type mobile information terminal. The mobile information terminal 7900 includes a display unit 7901, a housing 7902, a housing 7903, a band 79 04, operation buttons 7905, etc.

[0523] As shown in FIG. 28A, the portable information terminal 7900 has a housing 7902 and a housing 7903. By lifting the housing 7902 from the stacked state as shown in FIG. 28(B), As shown in FIG. 28C, the display portion 7901 can be reversibly transformed into an expanded state. Therefore, the portable information terminal 7900 is usually configured such that the display portion 7901 is folded. It can be used in this state, and the display area can be expanded by unfolding the display section 7901. It can be used as such.

[0524] In addition, the display portion 7901 has a function as a touch panel, The mobile information terminal 7900 can be operated by touching the operation button 7905. By pressing, turning, or sliding it up and down, toward you, or toward the depths, The portable information terminal 7900 can be operated.

[0525] As shown in FIG. 28A, when the housing 7902 and the housing 7903 are overlapped, It is preferable to have a locking mechanism to prevent the body 7902 and the housing 7903 from being unintentionally separated. At this time, the locked state can be released by, for example, pressing the operation button 7905. It is preferable to use a structure that allows the locking state to be released by utilizing the restoring force of a spring or the like. When the state shown in FIG. 28(A) is removed, the state shown in FIG. 28(C) is automatically transformed. Alternatively, a magnet may be used instead of the locking mechanism to secure the housing 7902 and the housing The relative positions of the housing 7902 and the housing 7903 may be fixed by using a magnet. The body 7903 can be detached.

[0526] In Figures 28(A), (B), and (C), the direction of the bending of the band 7904 is approximately perpendicular to the bending direction. 28(D) and (E), the display unit 7901 can be opened in the direction of the arrow. The display unit 7901 can be unfolded in a direction substantially parallel to the bending direction of the band 7904. In this case, the display portion 7901 may be curved so as to be wrapped around the band 7904. It may also be used in combination.

[0527] The electronic device described in this embodiment has a display unit for displaying some information. The display unit is characterized in that the display panel, touch panel, or A display device such as a touch panel module can be applied.

[0528] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Example]

[0529] A display device according to one embodiment of the present invention was fabricated, and the results of cross-sectional observation thereof will be described below. The cross-sectional structure of the display device fabricated in this example can be seen in FIG.

[0530] [Fabrication of display device] First, a transistor and a wiring connected to the transistor were formed over a glass substrate. Transistors (transistor 201, transistor 202, transistor 205, etc.) In this case, a bottom-gate transistor using an oxide semiconductor as the semiconductor in which the channel is formed is used. In this example, the oxide semiconductor was used, and the c-axis was aligned in the direction perpendicular to the film surface. C-Axis Aligned Crystalline Oxide Semiconductor (CAAC-OS) A stalline-oxide semiconductor was used.

[0531] CAAC-OS is a crystalline oxide semiconductor whose c-axis is aligned approximately perpendicular to the film surface. Another example of the crystalline structure of oxide semiconductors is a nanoscale microcrystalline aggregate. There are various structures that are different from single crystals, such as nano-crystals (nc). It has been confirmed that CAAC-OS has lower crystallinity than single crystals and higher crystallinity than nc. CAAC-OS has the characteristic that no grain boundaries are visible, so it can be stably applied to large areas. It is possible to form a uniform film without any trouble, and the response when a flexible light-emitting device is bent is also low. The CAAC-OS film is less likely to crack due to force.

[0532] In this example, an In—Ga—Zn-based oxide was used as the oxide semiconductor material.

[0533] Next, a first electrode layer that functions as a pixel electrode is formed on the insulating layer that covers the transistors and wiring. The first electrode was formed with a laminated structure of a titanium film, an aluminum film, and a titanium film. Next, an insulating layer was formed to cover the edge of the first electrode. A photosensitive polyimide of 1000 nm was used. Then, a structure was formed on the insulating layer. A photosensitive polyimide film with a thickness of approximately 1.25 μm was used.

[0534] Subsequently, an EL layer and a second electrode were formed by evaporation to form a light-emitting element. Here, the EL layer and the second electrode were formed over the entire display area without using a metal mask. .

[0535] In addition, a light-shielding layer was formed on a glass substrate different from the above. A black matrix of 0.6 μm was used. Then, a red colored layer (R), a green colored layer ( The thickness of each layer was about 2 mm. The thickness of the colored layer (G) was approximately 1.0 μm, the thickness of the colored layer (B) was approximately 1.5 μm.

[0536] Next, the two glass substrates were bonded together with an adhesive, and the adhesive was cured. The adhesive was a thermosetting epoxy resin. The substrates were bonded together under reduced pressure.

[0537] The display device manufactured in this example was made to display white in the entire display area, and The results were visually observed from both vertical and oblique directions. It was confirmed that the change in chromaticity and brightness was extremely small.

[0538] [Cross-section observation results] The fabricated display device was processed by ion milling, and its cross section was observed under a scanning electron microscope (S Observation was performed using an EM (Scanning Electron Microscope).

[0539] The observed cross-sectional images are shown in Figure 29(A) and (B). Figure 29(A) and (B) are the same cross-sectional images. For clarity, FIG. 29(B) shows the outlines of each layer in FIG. 29(A) by dashed lines. is.

[0540] In addition, in Figures 29(A) and (B), cavities are seen in parts of the EL layer, but these are This was formed during processing for observation.

[0541] Two structures are shown in Figure 29(A) and (B). The structure on the left has a colored layer (R) and The structure on the right is located between the colored layer (B), and the structure on the right is located between the colored layer (R) and the colored layer (G). In addition, each of the structures has a portion located higher than the lower surface of the colored layer (R). It was confirmed that this was the case.

[0542] In the manufactured display device, the distance (high) between the first electrode and the colored layer (R) is It was confirmed that the opening in the insulating layer had a region where the difference in thickness was about 1.0 μm. It was confirmed that there was a region where the distance between the second electrode and the colored layer (R) was about 0.7 μm. In addition, in the opening of the insulating layer, the distance between the first electrode and the light-shielding layer is about 2.8 μm. It was also confirmed that the distance between the second electrode and the light-shielding layer in the opening of the insulating layer was It was confirmed that the area had a thickness of about 2.5 μm.

[0543] It is also confirmed that the display device has an area where the distance between the structure and the light-shielding layer is about 1.5 μm. It was also confirmed that the distance between the second electrode and the light-shielding layer on the structure was approximately 1.2 μm. was confirmed.

[0544] The structure has a taper angle (the angle between the bottom and side of the structure) in the range of approximately 45 degrees to 70 degrees. In addition, a part of the EL layer covering the structure was tapered to a thickness of 1 / 2 mm. It was confirmed that the thickness was thinner than the thickness of the film.

[0545] From the above, it can be seen that the display device manufactured in this example has an extremely small distance between the pair of substrates. Furthermore, visual observation confirmed that the viewing angle characteristics had been improved. .

[0546] The above is the description of this embodiment. [Explanation of symbols]

[0547] 10 Display device 11 Structure 11a part 12 Structure 21 PCB 23 Conductive layer 24 EL layer 24a EL layer 24b EL layer 25 Conductive layer 31 PCB 32 Display section 34 circuits 35 Wiring 39 Adhesive layer 40 Light-emitting element 42 FPC 43 IC 51a Colored layer 51b Colored layer 51c colored layer 52 Light blocking layer 60 Liquid crystal element 61 Conductive layer 62 LCD 63 Conductive Layer 64 Insulating layer 65 Insulating layer 70 transistors 71 Conductive layer 72 Semiconductor layer 73 Insulating layer 74a Conductive layer 74b Conductive layer 81 Insulating layer 81a Insulating layer 81b Insulating layer 81c Insulating layer 82 Insulating layer 82a part 90 transistors 91 Single crystal substrate 95a Connectivity Layer 95b Connection Layer 96 Conductive Layer 100 Touch Panel 111 Conductive layer 112 EL layer 113 Conductive Layer 130 Polarizing Plate 131 Colored layer 131a Colored layer 131b Colored layer 132 Light blocking layer 133 Light blocking layer 134 Colored layer 141 Adhesive layer 142 Adhesive layer 146 Conductive Film 147 Conductive Film 148 Conductive Film 149 Nanowires 150 Input Device 151 Electrode 152 Electrode 153 Bridge electrode 155 Wiring 156 Wiring 157 FPC 158 IC 160 boards 161 Insulating layer 162 Insulating layer 163 Insulating Layer 164 Insulating Layer 165 Adhesive layer 168 IC 169 Connection 170 PCB 171 PCB 172 Adhesive layer 173 Insulating Layer 181 PCB 182 Adhesive layer 183 Insulating Layer 191 Conductive layer 192 Conductive Layer 193 LCD 194 Conductive Layer 195 Insulating Layer 200 Display device 201 Transistor 202 Transistor 203 Capacitor 204 Terminal section 205 Transistor 206 Transistor 207 Terminal section 210 pixels 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 220 Insulating layer 221 Conductive layer 222 Conductive layer 223 Conductive Layer 224 Conductive Layer 231 Semiconductor layer 242 Connection Layer 243 Connectors 251 Aperture 252 Connection 601 Pulse voltage output circuit 602 Current detection circuit 603 capacity 621 Electrode 622 Electrode 705 Insulation Layer 706 Electrode 707 Insulation Layer 708 Semiconductor layer 710 Insulation Layer 711 Insulation layer 714 Electrode 715 Electrode 722 Insulation Layer 723 Electrode 726 Insulation Layer 727 Insulation Layer 728 Insulation Layer 729 Insulation Layer 741 Insulation Layer 742 Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 Circuit Board 772 Insulation Layer 810 Transistor 811 Transistor 820 transistors 821 Transistor 825 transistors 826 Transistor 830 transistors 831 Transistor 840 transistors 841 Transistor 842 transistors 843 Transistor 844 transistors 845 transistors 846 transistors 847 Transistor 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Stand 5013 Remote control operation machine 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Band 5019 Clasp 5020 Icon 5021 Icon 7000 Display 7001 Display section 7100 Mobile Phone 7101 Housing 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7200 Television Equipment 7201 Case 7203 Stand 7211 Remote control device 7300 Mobile Information Terminal 7301 Housing 7302 Operation button 7303 Information 7304 Information 7305 Information 7306 Information 7310 Mobile Information Terminals 7320 Mobile Information Terminal 7400 Lighting Equipment 7401 Daibu 7402 Light-emitting part 7403 Operation switch 7410 Lighting equipment 7412 Light-emitting part 7420 Lighting equipment 7422 Light-emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Personal Digital Assistant 7601 Case 7602 Hinge 7650 Personal Digital Assistant 7651 Hidden part 7700 Personal Digital Assistant 7701 Housing 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Personal Digital Assistant 7901 Display section 7902 Case 7903 Housing 7904 band 7905 Operation button 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

[Claim 1] a display portion including a first pixel, a second pixel, a first colored layer, a second colored layer, a first structure, and a second structure; each of the first pixel and the second pixel includes a transistor and a liquid crystal element electrically connected to the transistor and a pixel electrode; the first pixel and the second pixel correspond to the same color; In a plan view, the first pixel and the second pixel are disposed adjacent to each other in a first direction, In a plan view, the first colored layer and the second colored layer have a shape extending in the first direction, In a plan view, the first structure has a shape extending in the first direction, In a plan view, the second structure has a shape extending in a second direction intersecting the first direction, In a plan view, the first conductive layer having a function as the pixel electrode has a shape extending in the first direction, In a plan view, a width of the first structure in the first direction is longer than a width of the first conductive layer in the second direction; In a plan view, a width of the second structure in the second direction is longer than a width of the first conductive layer in the second direction; In a plan view, the first structure and the second structure are arranged at an interval from each other, In a plan view, the first structure overlaps with a region between the first colored layer and the second colored layer, a liquid crystal display device, wherein, in a plan view, the second structure has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel; the first structure overlaps with a second conductive layer that functions as a gate of the transistor included in the first pixel, with a third conductive layer that functions as a common electrode of the liquid crystal element interposed therebetween; a semiconductor layer including a channel formation region of the transistor included in the first pixel, the first structure body overlapping with the third conductive layer therebetween;

Images