Glass substrate and method for manufacturing the same

Abstract

The present invention enables a semiconductor device to be appropriately manufactured. A glass substrate (10) is a glass substrate for manufacturing a semiconductor device, wherein when one surface (10A) of the glass substrate faces downward in the vertical direction, and a first position (P1A), a second position (P2A), and a third position (P3A) of the one surface (10A), which are radially outside the center point (O) of the glass substrate (10), are supported by supporting members (B), the lowest point (SB1) of the other surface (10B), which is the position where the height in the vertical direction is the lowest, is located in a circular central region (AR) which is radially inside from the first position (P1A), the second position (P2A), and the third position (P3A) when viewed from the vertical direction, and has a center that is the center point (O) of the glass substrate (10), and the diameter (D1) is one-third the diameter (W) of the glass substrate (10).

Description

[Technical Field]

[0001] The present invention relates to a glass substrate and a method for manufacturing a glass substrate. [Background technology]

[0002] During the manufacturing process of semiconductor devices, glass substrates are sometimes used as members for supporting semiconductor devices. For example, Patent Document 1 describes a glass support substrate for fan-out wafer-level packaging. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6443668 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when manufacturing semiconductor devices while supporting them on a glass substrate, temperature differences occur between processes, and stress is generated in the glass substrate due to differences in the thermal expansion coefficients of materials, etc. This stress causes the glass to deform, but the deformation may be discontinuous. If the deformation of the glass is discontinuous, it may cause contact between the equipment and the glass substrate, or breakage of the device due to a sudden change in shape. In such cases, semiconductor devices may not be manufactured properly. Therefore, there is a need to provide a glass substrate that allows for the proper manufacturing of semiconductor devices.

[0005] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a glass substrate and a method for manufacturing a glass substrate that can be used to appropriately manufacture semiconductor devices. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems and achieve the object, the glass substrate of the present disclosure is a glass substrate for manufacturing semiconductor devices, and when one surface faces vertically downward and the one surface is supported by a support member at first, second, and third positions radially outward from the center point of the glass substrate, the lowest point, which is the position on the other surface that has the lowest vertical height, is radially inward from the first, second, and third positions when viewed from the vertical direction, and is located within a circular central region whose center is the center point of the glass substrate and whose diameter is 1 / 3 the diameter of the glass substrate.

[0007] In order to solve the above-mentioned problems and achieve the object, the method for manufacturing a glass substrate according to the present disclosure is a method for manufacturing the glass substrate, including the steps of melting raw materials, stirring the melted raw materials at a stirring speed of 5 rpm or more and 20 rpm or less for 12 hours or more and 24 hours or less, and cooling the stirred raw materials to form the glass substrate. [Effects of the Invention]

[0008] According to the present invention, semiconductor devices can be appropriately manufactured. [Brief explanation of the drawings]

[0009] [Figure 1A] FIG. 1A is a schematic diagram of a glass substrate according to this embodiment. [Figure 1B] FIG. 1B is a schematic diagram of a glass substrate according to this embodiment. [Figure 2A] FIG. 2A is a schematic diagram for explaining the bending of the glass substrate according to this embodiment. [Figure 2B] FIG. 2B is a schematic diagram for explaining the bending of the glass substrate according to this embodiment. [Figure 3A] FIG. 3A is a schematic diagram for explaining the bending of the glass substrate according to this embodiment. [Figure 3B] FIG. 3B is a schematic diagram for explaining the bending of the glass substrate according to this embodiment. [Figure 4] FIG. 4 is a flowchart illustrating the method for manufacturing a glass substrate according to this embodiment. [Figure 5] FIG. 5 is a diagram illustrating the evaluation method for each example. [Figure 6] FIG. 6 is a graph showing an example of dy / dF. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Note that the present invention is not limited to these embodiments, and when there are multiple embodiments, the present invention also includes configurations that are made by combining the respective embodiments. Furthermore, numerical values ​​include the range of rounding.

[0011] (glass substrate) 1A and 1B are schematic diagrams of a glass substrate according to this embodiment. FIG. 1A is a front view of a glass substrate 10 according to this embodiment, and FIG. 1B is a plan view of the glass substrate 10 according to this embodiment. As shown in FIG. 1A, the glass substrate 10 according to this embodiment is used as a glass substrate for manufacturing semiconductor packages and can be said to be a glass substrate for supporting semiconductor devices. More specifically, the glass substrate 10 is a supporting glass substrate for manufacturing fan-out wafer-level packages (FOWLPs). For example, if the glass substrate 10 is rectangular, it is a supporting glass substrate for manufacturing fan-out panel-level packages (FOPLPs). However, the use of the glass substrate 10 is not limited to supporting semiconductor devices or manufacturing FOWLPs or FOPLPs, and may be any use, such as a glass substrate used to support any member.

[0012] As shown in FIGS. 1A and 1B, glass substrate 10 is a plate-like member having surface 10A (one surface) as one of its major surfaces and surface 10B (the other surface) as the major surface opposite surface 10A. As shown in FIG. 1B, glass substrate 10 has a circular disk shape when viewed from a plane, i.e., from a direction perpendicular to surface 10A. In other words, glass substrate 10 has a wafer shape. Glass substrate 10 may have a notch 10D formed in its outer peripheral surface 10C, resulting in a partially cut-out circular periphery. In this case, notch 10D may also have a chamfered shape including an outer peripheral surface portion 14C1 and an edge surface portion 14C2, which will be described later. The shape of glass substrate 10 is not limited to a disk shape and may be any shape, such as a polygonal plate, such as a rectangular plate. Hereinafter, the direction perpendicular to surface 10A will be referred to as the Z direction. The Z direction can also be said to be the thickness direction of the glass substrate 10.

[0013] As shown in FIG. 1A, the glass substrate 10 has a chamfered outer peripheral surface 10C. Specifically, the outer peripheral surface 10C includes an outer peripheral surface portion 10C1 and an edge surface portion 10C2. The outer peripheral surface portion 10C1 corresponds to the non-chamfered portion of the outer peripheral surface 10C, and the edge surface portion 10C2 corresponds to the chamfered portion of the outer peripheral surface 10C. The outer peripheral surface 10C has a shape including the outer peripheral surface portion 10C1 and the edge surface portion 10C2 as shown in FIG. 1A over the entire circumferential area of ​​the glass substrate 10.

[0014] The outer peripheral surface portion 10C1 is a surface including a portion of the outer peripheral surface 10C that protrudes most radially outward from the glass plate 10. As shown in Fig. 1A, the outer peripheral surface portion 10C1 is aligned with the Z direction when viewed from a direction perpendicular to the Z direction.

[0015] The outer peripheral surface portion 10C1 is connected to the surface of the glass substrate 10 via the edge surface portion 10C2. That is, one end of the edge surface portion 10C2 in the Z direction is connected to the outer peripheral surface portion 10C1, and the other end is connected to the surface of the glass substrate 10. The edge surface portions 10C2 are formed on both sides of the outer peripheral surface portion 10C1 in the Z direction. That is, the outer peripheral surface 10C is formed so that one edge surface portion 10C2, the outer peripheral surface portion 10C1, and the other edge surface portion 10C2 are arranged in this order in the Z direction. One end of one edge surface portion 10C2 in the Z direction is connected to the surface 10A of the glass substrate 10, and the other end is connected to the outer peripheral surface portion 10C1. Furthermore, the other edge surface portion 10C2 has one end in the Z direction connected to the outer peripheral surface portion 10C1, and the other end is connected to the surface 10B of the glass substrate 10.

[0016] 3, the edge surface portion 10C2 is inclined with respect to the Z direction when viewed from a direction perpendicular to the Z direction. The edge surface portion 10C2 is inclined radially inward of the glass substrate 10 from the outer peripheral surface portion 10C1 toward the front surface side of the glass substrate 10.

[0017] As described above, the outer peripheral surface 10C has a chamfered shape including the outer peripheral surface portion 10C1 and the edge surface portion 10C2, but the shape of the outer peripheral surface 10C is not limited to this, and for example, the chamfer may not be formed.

[0018] (diameter of glass substrate) The diameter W of the glass substrate 10 is preferably 150 mm or more and 700 mm or less, more preferably 150 mm or more and 450 mm or less, even more preferably 150 mm or more and 400 mm or less, even more preferably 250 mm or more and 350 mm or less, and even more preferably 300 mm or more and 350 mm or less. Having the diameter W within this range allows for appropriate support of components such as semiconductor devices. Note that the diameter W refers to the diameter when the glass substrate 10 is circular, but when the glass substrate 10 is not circular, it may refer to the maximum distance between any two points on the outer periphery of the glass substrate 10.

[0019] (thickness of glass substrate) The thickness D of the glass substrate 10, i.e., the distance between the surface 10A and the surface 10B, is preferably 2 mm or less, more preferably 0.5 mm to 2.0 mm, even more preferably 0.6 mm to 1.5 mm, and even more preferably 0.6 mm to 1.0 mm. Having the thickness D within this range of the glass substrate 10 suppresses weight gain due to the thickness, making it preferable for use in semiconductor device manufacturing. On the other hand, if the thickness D falls within this range, there is a high possibility that semiconductor devices will not be properly manufactured due to the effects of deflection. However, as described below, by positioning the lowest point of the deflection due to its own weight toward the center, deterioration in the manufacturability of semiconductor devices can be suppressed.

[0020] Furthermore, the deviation of the thickness D is preferably 10 μm or less, and more preferably 3 μm or less. When the deviation of the thickness D is within this range, the thickness D of the glass substrate 10 becomes closer to uniform, making it possible to properly manufacture semiconductor devices. The deviation of the thickness D refers to the deviation of the thickness D at each position (each coordinate) on a plane along the surface of the glass substrate 10. For example, the thickness D at each position (coordinate) on a plane along the surface of the glass substrate 10 may be calculated, and the difference between the maximum and minimum values ​​of the thickness D at each position may be taken as the deviation of the thickness D.

[0021] (Young's modulus of glass substrate) The Young's modulus of the glass substrate 10 is preferably 60 GPa or more and 150 GPa or less, more preferably 70 GPa or more and 120 GPa or less, and even more preferably 75 GPa or more and 100 GPa or less. Having the Young's modulus within this range can prevent a decrease in the rigidity of the glass substrate and suppress deformation of the glass substrate, thereby suppressing deterioration in the manufacturability of semiconductor devices. The Young's modulus of the glass substrate 10 here may be a value measured based on ultrasonic propagation using an Olympus 38DL PLUS.

[0022] (Glass substrate density) The density of the glass substrate 10 is 2.0 g / cm 3 More than 4.0g / cm 3 It is preferable that the concentration is 2.5 g / cm or less. 3 More than 3.3g / cm 3 It is more preferable that the density is not more than 100%. When the density is in this range, an increase in the weight of the glass substrate 10 can be suppressed, and deterioration in the manufacturability of semiconductor devices can be suppressed. The density of the glass substrate 10 may be a value measured using the Archimedes method.

[0023] (Glass substrate composition) The glass substrate 10 preferably contains the following compounds in terms of mass % (wt %) based on oxides: By making the glass substrate 10 have the following composition, it is possible to properly support members. SiO2: 40 wt% or more and 75 wt% or less is preferable, and 50 wt% or more and 75 wt% or less is more preferable. Al2O3: preferably 0 wt% or more and 20 wt% or less, more preferably 0 wt% or more and 15 wt% or less B2O3: preferably 0 wt% or more and 20 wt% or less, more preferably 0 wt% or more and 10 wt% or less MgO: 0 wt% to 25 wt% is preferable CaO: preferably 0 wt% or more and 25 wt% or less, and more preferably 0 wt% or more and 15 wt% or less SrO: preferably 0 wt% or more and 10 wt% or less BaO: preferably 0 wt% or more and 20 wt% or less, more preferably 0 wt% or more and 15 wt% or less Li2O: 0 wt% or more and 40 wt% or less is preferable Na2O: preferably 0 wt% or more and 15 wt% or less K2O: 0 wt% or more and 10 wt% or less is preferable ZrO2: 0 wt% or more and 10 wt% or less is preferable, 0 wt% or more and 8 wt% or less is more preferable, and 0 wt% or more and 5 wt% or less is even more preferable. TiO2: 0 wt% to 5 wt% is preferred Y2O3: 0 wt% to 10 wt% is preferable

[0024] (deflection of glass substrate) 2A and 2B are schematic diagrams illustrating deflection of a glass substrate according to this embodiment. FIG. 2A illustrates an example of deflection due to the weight of a glass substrate 10 when viewed from the Z direction, with support members B supporting three positions: a first position P1A, a second position P2A, and a third position P3A, which are radially outward from a center point O of the glass substrate 10. The first position P1A is a position on the surface 10A that is a distance L1A away from the center point O of the glass substrate 10 in the radial direction. The second position P2A is a position on the surface 10A that is a distance L2A away from the center point O of the glass substrate 10 in the radial direction, and is a position that is circumferentially offset from the first position P1A when the center point O is the center. The third position P3A is a position on the surface 10A that is a distance L3A away from the center point O of the glass substrate 10 in the radial direction, and is a position that is circumferentially offset from the first position P1A and the second position P2A when the center point O is the center. Note that the radial direction here refers to the radial direction when the center point O is the center. Distances L1A, L2A, and L3A are all the same length, and are 29 / 30 times the radius (half the diameter W) of the glass substrate 10. Support member B is a spherical member with a diameter of 1 mm to 2 mm, and preferably 1.6 mm. The material of support member B is preferably softer than glass and less likely to deform due to temperature, humidity, or the weight of the glass during measurement, such as a resin such as PEEK (Polyetheretherketone) or PTFE (Polytetrafluoroethylene). PEEK may be used here.

[0025] 2A, when the surface 10A of the glass substrate 10 is oriented vertically downward and the first position P1A, the second position P2A, and the third position P3A on the surface 10A are supported by a support member B, the lowest point SB1 is the position on the surface 10B on the vertically upper side where the height in the vertical direction is lowest. In other words, the lowest point SB1 is the position on the surface 10B where the amount of deflection is greatest. In this case, the position of the lowest point SB1 is located within the central region AR when viewed from the vertical direction (Z direction). The central region AR is a region radially inward from the first position P1A, the second position P2A, and the third position P3A. More specifically, the central region AR is a circular region whose center is the center point O and whose diameter D1 is 1 / 3 of the diameter W of the glass substrate 10.

[0026] In this way, when glass substrate 10 has front surface 10A facing vertically downward and is supported at three points by support members B at first position P1A, second position P2A, and third position P3A, lowest point SB is located within central region AR. By having lowest point SB of glass substrate 10 located within central region AR rather than outside central region AR, deformation of glass substrate 10 that shifts the bending position during the manufacture of semiconductor devices, for example, can be suppressed, and deterioration in the manufacturability of semiconductor devices can be suppressed.

[0027] Furthermore, the maximum deflection amount TBmax is the maximum amount of deflection of glass substrate 10 when surface 10A of glass substrate 10 faces vertically downward and a first position P1A, a second position P2A, and a third position P3A on surface 10A are supported by support member B. Maximum deflection amount TBmax can be said to be the maximum amount of deflection due to the weight of glass substrate 10, and can be said to be the distance along the vertical direction from the highest point SB2 to the lowest point SB1 of glass substrate 10. Note that highest point SB2 is the position on surface 10B on the vertically upper side that has the highest vertical height when surface 10A of glass substrate 10 faces vertically downward and a first position P1A, a second position P2A, and a third position P3A on surface 10A are supported by support member B. In this case, when the diameter W of the glass substrate 10 is 150 mm or more and 700 mm or less and the thickness D is 2 mm or less, the maximum deflection TBmax is preferably 650 μm or less, more preferably 10 μm or more and 630 μm or less, and even more preferably 50 μm or more and 625 μm or less. By keeping the maximum deflection TBmax within this range, the amount of deflection is also reduced, thereby more preferably preventing deterioration in the manufacturability of semiconductor devices. The maximum deflection TBmax can be measured using a Dyvoce manufactured by Kohzu Seiki.

[0028] 2A illustrates an example in which the glass substrate 10 is simply warped, but the manner in which the glass substrate 10 is warped is not limited to the simple warp shown in Fig. 2A and may be warped in a manner as shown in Fig. 2B, for example. That is, in Fig. 2A, the glass substrate 10 is warped to have a concave shape that is concave from the outer peripheral edge toward the lowest point SB1, but as shown in Fig. 2B, the glass substrate 10 may be warped so as to be concave from the point indicated by the support member B toward the lowest point SB1 and also to be concave from the point supported by the support member B toward the outer peripheral edge.

[0029] The above description has been made regarding deflection of the glass substrate 10 when the surface 10A faces vertically downward. Below, we will describe deflection of the glass substrate 10 when the surface 10B faces vertically downward. FIGS. 3A and 3B are schematic diagrams illustrating deflection of the glass substrate according to this embodiment. FIG. 3A is a diagram illustrating an example of deflection due to its own weight when the glass substrate 10 is supported by a support member B at three points: a first position P1B, a second position P2B, and a third position P3B, which are radially outward from the center point O of the glass substrate 10 when viewed from the Z direction. The first position P1B is a position on the surface 10B that is a distance L1B away from the center point O of the glass substrate 10 radially outward. The second position P2B is a position on the surface 10B that is a distance L2B away from the center point O of the glass substrate 10 radially outward and is circumferentially offset by 120 degrees from the first position P1B when the center point O is the center. The third position P3B is a position on the surface 10B that is a distance L3B away from the center point O of the glass substrate 10 in the radial direction outward, and is a position that is shifted 120 degrees in the circumferential direction from the first position P1B and the second position P2B when the center point O is the center. The distances L1B, L2B, and L3B are all the same length, and are 29 / 30 times the length of half the diameter W (radius) of the glass substrate 10.

[0030] 3A, when the surface 10B of the glass substrate 10 faces downward in the vertical direction and is supported by a support member B at a first position P1B, a second position P2B, and a third position P3B on the surface 10B, the position on the vertically upper surface 10A that has the lowest vertical height is defined as the lowest point SA1. In other words, the lowest point SA1 can be said to be the position on the surface 10A where the amount of deflection is greatest. In this case, the position of the lowest point SA1 is preferably located within the central region AR when viewed from the vertical direction (Z direction).

[0031] 3A illustrates an example in which glass substrate 10 is simply warped, but the manner in which glass substrate 10 is warped is not limited to the simple warp shown in Fig. 3A and may be warped in a manner as shown in Fig. 3B, for example. That is, in Fig. 3A, glass substrate 10 is warped to have a concave shape that is concave from the outer circumferential edge toward the lowest point SA1, but as shown in Fig. 3B, glass substrate 10 may be warped so as to be concave from the point indicated by support member B toward the lowest point SA1 and also to be concave from the point supported by support member B toward the outer circumferential edge.

[0032] In this way, the lowest point SB1 (see FIG. 2A) of the glass substrate 10 when the front surface 10A is supported at three points facing vertically downward, and the lowest point SA1 (see FIG. 3A) of the glass substrate 10 when the front surface 10B is supported at three points facing vertically downward, are both located within the central region AR. However, it is sufficient that at least one of the lowest points SB1 and SA1 of the glass substrate 10 is located within the central region AR, and for example, one of the lowest points SB1 and SA1 may be located outside the central region AR.

[0033] Furthermore, the maximum deflection amount TAmax of the glass substrate 10 when the surface 10B of the glass substrate 10 faces downward in the vertical direction and a first position P1B, a second position P2B, and a third position P3B on the surface 10B are supported by a support member B. The maximum deflection amount TAmax can be said to be the maximum amount of deflection due to the weight of the glass substrate 10, and can be said to be the distance along the vertical direction from the highest point SA2 to the lowest point SA1 of the glass substrate 10. Note that the highest point SA2 is the position on the vertically upper surface 10A that has the highest vertical height when the surface 10B of the glass substrate 10 faces downward in the vertical direction and is supported by a support member B at the first position P1B, the second position P2B, and the third position P3B on the surface 10B. In this case, when the diameter W of the glass substrate 10 is 150 mm or more and 700 mm or less and the thickness D is 2 mm or less, the maximum deflection TAmax is preferably 650 μm or less, more preferably 10 μm or more and 630 μm or less, and even more preferably 50 μm or more and 625 μm or less. By keeping the maximum deflection TAmax within this range, the amount of deflection is also reduced, making it possible to more effectively prevent deterioration in the manufacturability of semiconductor devices. The maximum deflection TAmax can be measured using a Dyvoce manufactured by Kohzu Seiki.

[0034] The maximum deflection Tmax is determined as the larger of the maximum deflection TBmax when the surface 10A faces vertically downward and the maximum deflection TAmax when the surface 10B faces vertically downward. In this case, the maximum deflection Tmax is multiplied by the cube of the thickness D of the glass substrate 10 and the Young's modulus E of the glass substrate 10, and the result is divided by 1000 (i.e., Tmax·D 3 ·E / 1000) is preferably 20 or less. 3 By setting ·E / 1000 in this range, deformation of the glass substrate 10 that causes the bending position to shift can be more suitably suppressed.

[0035] (Warpage of glass substrate) Here, the amount of warpage of the glass substrate 10 excluding the warpage due to its own weight is defined as the warpage ΔT. In this case, the warpage ΔT is preferably 250 μm or less, more preferably 100 μm or less. By setting the warpage ΔT within this range, it is possible to suppress warpage of semiconductor devices manufactured on the glass substrate 10, and to more suitably suppress deterioration in the manufacturability of the semiconductor devices. The warpage ΔT is calculated by dividing the maximum value of the difference in the amount of warpage at each position (each coordinate) on a plane along the surface of the glass substrate 10 between the case where the surface 10B is supported by the support member B as described above with the surface 10B facing vertically downward and the case where the surface 10A is supported by the support member B as described above with the surface 10B facing vertically downward by 2. That is, the amount of warpage at position (coordinate) i on a plane along the surface of the glass substrate 10 when the surface 10B is supported by the support member B as described above with the surface 10B facing vertically downward is defined as TA (i) The amount of deflection at a position (coordinate) i on a plane along the surface of the glass substrate 10 when the surface 10A is supported by the support member B as described above with the surface 10A facing vertically downward is defined as TB (i) Then, the deflection amount TA for each position i is (i) and deflection amount TB (i) The maximum difference between these values ​​is called MAX(TA (i) -TB (i) In this case, the amount of warpage ΔT is calculated by the following formula (1). (i) -TB (i) ) divided by 2.

[0036] ΔT=|MAX(TA (i) -TB (i) )| / 2 ···(1)

[0037] (Glass substrate manufacturing method) Next, a method for manufacturing the glass substrate 10 will be described. FIG. 4 is a flowchart illustrating a method for manufacturing a glass substrate according to this embodiment. As shown in FIG. 4, in the manufacturing method according to this embodiment, raw materials adjusted to match the composition of the glass substrate 10 are heated and melted (step S10). The melted raw materials are then stirred (step S12). The raw materials can be stirred under any conditions. For example, it is preferable to set the rotation speed of the stirring blade that stirs the melted raw materials to 5 rpm or more and 20 rpm or less, and to stir the raw materials for 12 hours or more and 24 hours or less. The stirring blade is a member for stirring the melted raw materials and may have any shape, including but not limited to a blade shape. In this manufacturing method, the glass substrate 10 can be manufactured without stirring the melted raw materials in this manner. However, stirring in this manner is preferable because it can prevent abnormalities in the warped shape.

[0038] The molten raw material is then cooled to form the glass substrate 10 (step S14). The step of forming the glass substrate 10 may be performed by any method. For example, the glass substrate 10 may be formed by manufacturing a glass ingot and then slicing the ingot. In this case, for example, the ingot may be manufactured by a fusion casting method. Alternatively, for example, the plate-shaped glass substrate 10 may be directly formed without manufacturing a glass ingot. In this case, for example, the plate-shaped glass substrate 10 may be manufactured by a roll-out method, a down-draw method, a fusion method, a float method, or the like. Note that in any of these methods, a step of polishing the surface of the glass may be added.

[0039] (effect) As described above, the glass substrate 10 according to this embodiment is used in a method for manufacturing semiconductor devices. When one surface 10A faces vertically downward and is supported by a support member B at first position P1A, second position P2A, and third position P3A on the one surface 10A, which are radially outward from the center point O of the glass substrate 10, the lowest point SB1, which is the lowest vertical height of the other surface 10B, is located within a central region AR as viewed vertically. The central region AR is a circular region radially inward from the first position P1A, second position P2A, and third position P3A, centered at the center point O of the glass substrate 10, and having a diameter D1 that is one-third the diameter W of the glass substrate 10. When manufacturing semiconductor devices while supporting a substrate with a glass substrate, temperature differences may occur between processes, and stress may be generated in the glass substrate due to differences in the thermal expansion coefficients of materials, etc. The stress causes the glass substrate to deform, but the deformation may be discontinuous. If the deformation of the glass substrate is discontinuous, contact between the equipment and the glass substrate or a sudden change in shape may occur, resulting in breakage of the device. In such cases, semiconductor devices may not be manufactured properly. In contrast, the glass substrate 10 according to this embodiment has the lowest point SB1, where the self-weight deflection is maximized, located within the central region AR. This suppresses discontinuous deformation that would cause the deflection position of the glass substrate 10 to shift due to the load applied when supporting the semiconductor device. Therefore, the glass substrate 10 according to this embodiment suppresses deterioration in the manufacturability of semiconductor devices, enabling proper manufacturing of semiconductor devices.

[0040] Furthermore, when the other surface 10B of the glass substrate 10 faces vertically downward and the other surface 10B is supported by a support member B at a first position P1B, a second position P2B, and a third position P3B radially outward from the center point O of the glass substrate 10, the lowest point SA1, which is the position of the one surface 10A with the lowest vertical height, is preferably located within the central region AR when viewed vertically. In the glass substrate 10 according to this embodiment, regardless of whether the surface 10A or 10B faces downward, the lowest points SA1 and SB1 at which the self-weight deflection is maximum are located within the central region AR. Therefore, with the glass substrate 10, deformation that shifts the deflection position of the glass substrate 10 is further suppressed, thereby enabling more suitable manufacturing of semiconductor devices.

[0041] Furthermore, it is preferable that the thickness D of the glass substrate 10 is 2 mm or less. By setting the thickness D within this range, the weight of the glass substrate 10 can be suppressed. Furthermore, while there is concern that reducing the thickness D in this manner may result in deterioration of the manufacturability of semiconductor devices due to the effects of warping, by positioning the lowest point SB1 of the glass substrate 10 within the central region AR, deformation that would shift the position at which the glass substrate 10 warps can be suppressed, and deterioration of the manufacturability of semiconductor devices can also be suppressed.

[0042] Furthermore, it is preferable that the diameter W of the glass substrate 10 is 150 mm or more and 700 mm or less, and that the maximum deflection TBmax is 650 μm or less when one surface 10A faces vertically downward and one surface 10A is supported by a support member B at a first position P1A, a second position P2A, and a third position P3A. By setting the maximum deflection amount of the glass substrate 10 within this range, excessive deflection can be prevented, thereby enabling more suitable manufacturing of semiconductor devices.

[0043] Furthermore, the maximum deflection amount TBmax when one surface 10A of the glass substrate 10 is oriented vertically downward and the first position P1A, the second position P2A, and the third position P3A of the one surface 10A are supported by the support member B, and the maximum deflection amount TAmax when the other surface 10B is oriented vertically downward and the first position P1B, the second position P2B, and the third position P3B of the other surface 10B are supported by the support member B. The larger of these values ​​is defined as Tmax, where D is the thickness of the glass substrate 10 and E is the Young's modulus of the glass substrate 10, and Tmax·D 3 It is preferable that E / 1000≦20. Tmax D 3 By setting ·E / 1000 in this range, deformation of the glass substrate 10 that causes the bending position to shift can be more suitably suppressed.

[0044] Furthermore, when the other surface 10B of glass substrate 10 faces vertically downward and the first position P1B, the second position P2B, and the third position P3B of the other surface 10B are supported by support member B, if the diameter W of glass substrate 10 is 150 mm or more and 700 mm or less and the thickness D is 2 mm or less, the maximum deflection TAmax is preferably 650 μm or less. By setting the maximum deflection amount of glass substrate 10 within this range, excessive deflection can be prevented, thereby enabling more suitable manufacturing of semiconductor devices.

[0045] Furthermore, it is preferable that the glass substrate 10 has a chamfered portion (edge ​​portion 14C2) between the surface and the outer peripheral surface 10C. By chamfering the glass substrate 10, semiconductor devices can be more suitably manufactured.

[0046] Furthermore, it is preferable that a notch 10D is formed in the outer peripheral surface 10C of the glass substrate 10. By forming the notch 10D in the glass substrate 10, positioning and the like can be performed appropriately, allowing for more suitable production of semiconductor devices.

[0047] Furthermore, it is preferable that the warpage ΔT of the glass substrate 10, excluding the warpage due to its own weight, is 250 μm or less, and the deviation of the thickness D is 10 μm or less. When the warpage ΔT and the deviation of the thickness D of the glass substrate 10 are within these ranges, deformation that shifts the position of the warpage of the glass substrate 10 can be suppressed, and deterioration of the manufacturability of semiconductor devices can be suppressed.

[0048] Furthermore, it is preferable that the warpage ΔT of the glass substrate 10, excluding the warpage due to its own weight, is 100 μm or less, and the deviation of the thickness D is 3 μm or less. When the warpage ΔT and the deviation of the thickness D of the glass substrate 10 are within these ranges, deformation that shifts the position of the warpage of the glass substrate 10 can be suppressed, and deterioration of the manufacturability of the semiconductor device can be suppressed.

[0049] The glass substrate 10 contains, in mass % on an oxide basis, SiO2: 40wt% or more and 75wt% or less, Al2O3: 0 wt% or more and 20 wt% or less, B2O3: 0wt% or more and 20wt% or less, MgO: 0wt% or more and 25wt% or less, CaO: 0wt% or more and 25wt% or less, SrO: 0wt% or more and 10wt% or less, BaO: 0wt% or more and 20wt% or less, Li2O: 0 wt% or more and 40 wt% or less, Na2O: 0wt% or more and 15wt% or less, K2O: 0 wt% or more and 10 wt% or less, ZrO2: 0 wt% or more and 10 wt% or less, TiO2: 0 wt% or more and 5 wt% or less, and Y2O3: preferably 0 wt% or more and 10 wt% or less. By keeping the composition in this range, semiconductor devices can be manufactured more efficiently.

[0050] The glass substrate 10 is preferably a glass substrate for manufacturing at least one of a fan-out wafer level package and a fan-out panel level package. The glass substrate 10 is suitable for use in a fan-out wafer level package and a fan-out panel level package.

[0051] The method for manufacturing glass substrate 10 according to this embodiment includes the steps of melting raw materials, stirring the melted raw materials at a stirring speed of 5 rpm or more and 20 rpm or less for 12 hours or more and 24 hours or less, and cooling the stirred raw materials to form glass substrate 10. According to this manufacturing method, stirring the melted raw materials makes it possible to homogenize the raw materials, suppressing deformation that would shift the position of bending of glass substrate 10, and providing glass substrate 10 that can be used to suitably manufacture semiconductor devices.

[0052] (Example) Next, examples will be described. Note that the embodiment may be modified as long as the effects of the invention are achieved.

[0053] Table 1 shows the glass substrates of each example. In this example, glass substrates were manufactured by adjusting raw materials so that the glass substrates had a predetermined composition. Then, Young's modulus, density, the position of the lowest point in self-weight deflection, and the amount of deflection were measured for the manufactured glass substrates. Young's modulus was measured using a 38DL PLUS manufactured by OLYMPUS Corporation, and density was measured by the Archimedes method. In measuring the position of the lowest point and the amount of deflection, the second surface (the other surface of the glass substrate) was positioned vertically downward, and the first position P1A, second position P2A, and third position P3A described in this embodiment on the first surface (one surface of the glass substrate) were supported by support member B. The position of the lowest point on the first surface, where the vertical height was lowest, was measured, and the measurement results are shown as "on the first surface" under "Position of the lowest point" in Table 1. In Table 1, if the position of the lowest point was within the central region AR described in this embodiment, the position of the lowest point was defined as "inside," and if the position of the lowest point was not within the central region AR (outside the central region AR), the position of the lowest point was defined as "outside." Regarding the amount of deflection, the amount of deflection was measured at each position on the first surface when the glass substrate was supported as described above, and the minimum to maximum values ​​were calculated and recorded as the "deflection on the first surface" in Table 1. The deflection was measured using Dyvoce manufactured by Kozu Seiki. Furthermore, the first surface, which is one surface, was positioned vertically downward, and the first position P1B, second position P2B, and third position P3B described in this embodiment on the second surface, which is the other surface, were supported by support member B. In this case, the position of the lowest point on the second surface, where the vertical height was the lowest, was measured, and the measurement result is shown as "on the second surface" under "Lowest Point Position" in Table 1. In Table 1, if the position of the lowest point was within the central region AR described in this embodiment, the position of the lowest point was marked "inside," and if the position of the lowest point was not within the central region AR described in this embodiment (if it was outside the central region AR), the position of the lowest point was marked "outside." Furthermore, with regard to the amount of deflection, the amount of deflection at each position on the second surface when the glass substrate was supported as described above was measured, and the minimum to maximum values ​​were recorded as the "deflection on the second surface" in Table 1. Furthermore, the "maximum deflection amount" in Table 1 is the maximum value of the "deflection on the first surface" and the "deflection on the second surface," and the amount of warpage is the value calculated using the above-mentioned formula (1). Also, in Table 1, "Tmax·D 3 "·E / 1000" is the maximum deflection multiplied by the cube of the "thickness" and the "Young's modulus", and then divided by 1000.

[0054] [Table 1]

[0055] (Example 1) In Example 1, raw materials were prepared so that the glass substrate would have a predetermined composition C1, the raw materials were melted, the melted raw materials were stirred to produce a glass ingot, and the ingot was machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0056] (Example 2) In Example 2, raw materials were prepared so that the glass substrate would have composition C1, the raw materials were melted, the melted raw materials were stirred to produce a glass ingot, and the ingot was machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0057] (Example 3) In Example 3, raw materials were prepared so that the glass substrate would have composition C1, the raw materials were melted, the melted raw materials were stirred to produce a glass ingot, and the ingot was machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0058] (Example 4) In Example 4, raw materials were adjusted so that the glass substrate would have composition C1, the raw materials were melted, and the melted raw materials were stirred to produce a plate-shaped glass substrate.The glass substrate was then manufactured to have the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0059] (Example 5) In Example 5, raw materials were adjusted so that the glass substrate would have the predetermined composition C2, the raw materials were melted, and the melted raw materials were stirred to produce a plate-shaped glass substrate.The glass substrate was then manufactured to have the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0060] (Example 6) In Example 6, raw materials were adjusted so that the glass substrate would have the predetermined composition C3, the raw materials were melted, and the melted raw materials were stirred to produce a plate-shaped glass substrate.The glass substrate was then manufactured to have the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0061] (Example 7) In Example 7, raw materials were adjusted so that the glass substrate would have the predetermined composition C4, the raw materials were melted, and the melted raw materials were stirred to produce a plate-shaped glass substrate.The glass substrate was then manufactured to have the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0062] (Example 8) In Example 8, raw materials were prepared so that the glass substrate would have the specified composition C5. The raw materials were melted and stirred to produce a glass ingot. The ingot was then machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0063] (Example 9) In Example 9, raw materials were prepared so that the glass substrate would have composition C1, and a glass ingot was produced by melting the raw materials without stirring. The ingot was then machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0064] (Example 10) In Example 10, raw materials were prepared so that the glass substrate would have composition C5. The raw materials were melted and then a glass ingot was produced without stirring. The ingot was then machined to produce a glass substrate having the diameter, thickness, Young's modulus, density, lowest point position, and deflection amount shown in Table 1.

[0065] The compositions C1 to C5 are within the following ranges in terms of mass % on an oxide basis. SiO2: 40wt% or more and 75wt% or less, Al2O3: 0 wt% or more and 20 wt% or less, B2O3: 0wt% or more and 20wt% or less, MgO: 0wt% or more and 25wt% or less, CaO: 0wt% or more and 25wt% or less, SrO: 0wt% or more and 10wt% or less, BaO: 0wt% or more and 20wt% or less, Li2O: 0 wt% or more and 40 wt% or less, Na2O: 0wt% or more and 15wt% or less, K2O: 0 wt% or more and 10 wt% or less, ZrO2: 0 wt% or more and 10 wt% or less, TiO2: 0 wt% or more and 5 wt% or less, and Y2O3: 0 wt% or more and 10 wt% or less.

[0066] (Evaluation content) The samples of each example manufactured as described above were evaluated. FIG. 5 illustrates the evaluation method for each example. In the evaluation, the outer periphery of the glass substrate was held by support member J1, and a load of varying magnitude was applied to the center of the surface of the glass substrate, and the displacement at the center where the load was applied was measured. Specifically, as shown in FIG. 5, the edge of the glass substrate was held by four support members J1 at equal intervals in the circumferential direction. The force used to fix the glass substrate by the support members J1 was set as weak as possible so as not to cause the glass substrate to shift. Then, the center of the bottom surface of the glass substrate was placed on support member J2, and the support member J2 was placed on precision balance J3. The load was measured using precision balance J3. The displacement here refers to the amount of deflection, for example, the difference in the position of the center of the glass substrate relative to the highest point in the Z direction. A graph showing the relationship between F and y, where F is the load on the central portion and y is the displacement of the central portion, is then created to determine whether there are any locations where the change in y relative to the change in F is discontinuous, i.e., whether there are any locations where dy / dF is discontinuous. A sample with any discontinuous locations is deemed to have failed, as it indicates that the deflection shape of the entire system changes discontinuously during semiconductor manufacturing, resulting in an abnormality during the process. A sample without any discontinuous locations is deemed to have passed. Figure 6 shows an example of a graph showing dy / dF. Line segment L1 in Figure 6 represents an example where there are no locations where dy / dF is discontinuous, and line segment L2 represents an example where there are locations where dy / dF is discontinuous. However, lines L1 and L2 are merely examples and do not represent the evaluation results of each of the above examples.

[0067] (Evaluation results) The evaluation results for each example are shown in Table 1. As shown in Table 1, it can be seen that Examples 1 to 8, which are working examples, were evaluated as passing, while Examples 9 and 10, which are comparative examples, were evaluated as failing.

[0068] Although the embodiments of the present invention have been described above, the embodiments are not limited to the contents of these embodiments. Furthermore, the above-described components include those that can be easily imagined by a person skilled in the art, those that are substantially the same, and those that are within the scope of what is called equivalents. Furthermore, the above-described components can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the components can be made without departing from the spirit of the above-described embodiments. [Explanation of symbols]

[0069] 10 Glass substrate 10A, 10B surface AR central area D1, W diameter SA1, SB1 lowest score P1A, P1B 1st position P2A, P2B 2nd position P3A, P3B 3rd position

Claims

1. 1. A glass substrate for use in the manufacture of semiconductor devices, comprising: When one surface faces downward in the vertical direction and a first position, a second position, and a third position on the one surface that are radially outer than a center point of the glass substrate are supported by a support member, a lowest point, which is a position on the other surface that has the lowest height in the vertical direction, is located radially inner than the first position, the second position, and the third position as viewed from the vertical direction, and is located within a circular central region whose center is the center point of the glass substrate and whose diameter is 1 / 3 of the diameter of the glass substrate, a maximum deflection amount when the one surface is oriented vertically downward and the first position, the second position, and the third position of the one surface are supported by support members, and a maximum deflection amount when the other surface is oriented vertically downward and the first position, the second position, and the third position of the other surface are supported by support members; where Tmax is the larger value, D is the thickness of the glass substrate, and E is the Young's modulus of the glass substrate, Tmax·D 3 ·E / 1000≦20; Glass substrate.

2. A glass substrate for use in the manufacture of semiconductor devices, comprising: When one surface faces downward in the vertical direction and a first position, a second position, and a third position on the one surface that are radially outer than a center point of the glass substrate are supported by a support member, a lowest point, which is a position on the other surface that has the lowest height in the vertical direction, is located radially inner than the first position, the second position, and the third position as viewed from the vertical direction, and is located within a circular central region whose center is the center point of the glass substrate and whose diameter is 1 / 3 of the diameter of the glass substrate, The amount of warpage excluding deflection due to its own weight is 250 μm or less, and the thickness deviation is 10 μm or less. Glass substrate.

3. 3. The glass substrate according to claim 1, wherein when the other surface is directed vertically downward and the other surface is supported by a support member at a first position, a second position, and a third position radially outward from a center point of the glass substrate, a lowest point, which is a position with a lowest vertical height on the one surface, is located within the central region as viewed vertically.

4. The glass substrate according to claim 1 , which has a thickness of 2 mm or less.

5. The diameter is 150 mm or more and 700 mm or less, 5. The glass substrate according to claim 4, wherein when the one surface is oriented vertically downward and the one surface is supported by support members at the first position, the second position, and the third position, a maximum deflection amount is 650 μm or less.

6. 6. The glass substrate according to claim 5, wherein when the other surface is directed vertically downward and the other surface is supported by support members at first, second, and third positions radially outward from a center point of the glass substrate, a maximum deflection amount is 600 μm or less.

7. 2. The glass substrate according to claim 1, wherein the amount of warpage excluding deflection due to its own weight is 250 μm or less and the thickness deviation is 10 μm or less.

8. 8. The glass substrate according to claim 2, wherein the amount of warpage excluding deflection due to its own weight is 100 μm or less and the thickness deviation is 3 μm or less.

9. In mass % based on oxides, SiO ２ 40wt% or more, 75wt% or less Al ２ O ３ : 0wt% or more and 20wt% or less, B ２ O ３ : 0wt% or more and 20wt% or less, MgO: 0 wt% or more and 25 wt% or less, CaO: 0 wt% or more and 25 wt% or less, SrO: 0 wt% or more and 10 wt% or less, BaO: 0 wt% or more and 20 wt% or less, Li ２ O: 0wt% or more, less than 40wt% Na ２ O: 0wt% to 15wt% K ２ O: 0wt% or more, less than 10wt% ZrO ２ 0wt% or more, less than 10wt% TiO ２ : 0 wt% or more and 5 wt% or less, and Y ２ O ３ 9. The glass substrate according to claim 1, wherein the content of the SiO2 is 0 wt % or more and 10 wt % or less.

10. The glass substrate according to claim 1 , which is a glass substrate for use in manufacturing at least one of a fan-out wafer level package and a fan-out panel level package.

11. A method for manufacturing a glass substrate according to any one of claims 1 to 10, comprising: Melting the raw materials; a step of stirring the dissolved raw material at a stirring speed of 5 rpm or more and 20 rpm or less for 12 hours or more and 24 hours or less; and cooling the stirred raw material to form the glass substrate.

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