Substrate processing method and substrate processing apparatus

Abstract

To provide a film deposition method that suppresses oxygen defect, and to provide a substrate processing apparatus.SOLUTION: A film deposition method includes the steps of: cooling a substrate into a state of an ultralow temperature of 200 K or lower; and depositing an oxide semiconductor film on the cooled substrate.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention provides Substrate Processing The present invention relates to a method and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a thin film transistor including a gate electrode, a gate dielectric layer, an oxide semiconductor layer including indium gallium zinc oxide (IGZO), a source electrode, a drain electrode, a back channel protection layer, and an etching stop layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2016-519429 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, the critical voltage of thin film transistors (TFTs) that use IGZO film as an oxide semiconductor is shifted to the negative side due to oxygen defects in the IGZO film. Furthermore, the critical voltage can be shifted to the positive side by annealing the TFT after film formation. However, even after annealing, the TFT remains in the on state at a gate voltage of 0V. Therefore, TFTs using IGZO film generate leakage current at a gate voltage of 0V. Alternatively, TFTs using IGZO film require a gate voltage to turn the TFT off.

[0005] In response to the above issues, one aspect is as follows: Oxide semiconductor film Suppressing oxygen defects Substrate Processing It is an object of the present invention to provide a method and a substrate processing apparatus. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, a substrate having a gate electrode film and a gate dielectric film on the gate electrode film is provided. 100K or more and 150K or less a step of forming an oxide semiconductor film on the gate dielectric film of the cooled substrate; a step of forming a drain electrode and a source electrode on the oxide semiconductor film to form a thin film transistor on the substrate; and a step of subjecting the substrate to an annealing treatment, wherein the thin film transistor after the annealing treatment is a normally-off thin film transistor. [Effects of the Invention]

[0007] According to one aspect, Oxide semiconductor film Suppressing oxygen defects Substrate Processing A method and substrate processing apparatus may be provided. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of an example of a semiconductor manufacturing apparatus according to an embodiment of the present invention. [Figure 2] 2 is a schematic cross-sectional view showing an example of a wafer transport path in the semiconductor manufacturing apparatus according to the embodiment. FIG. [Figure 3] 1 is a schematic cross-sectional view of an example of a substrate processing apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention. [Figure 4] 1 is a schematic cross-sectional view of an example of a substrate processing apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention. [Figure 5] 3 is a flowchart illustrating an example of a film forming method according to the present embodiment. [Figure 6] 10 is a flowchart illustrating another example of the film forming method according to the present embodiment. [Figure 7] FIG. 2 is a diagram illustrating an example of a TFT according to an embodiment. [Figure 8] 10 is an example of a graph showing the IV characteristics of a TFT in which an oxide semiconductor film is formed by a film formation method according to a reference example. [Figure 9]1 is an example of a graph showing the IV characteristics of a TFT in which an oxide semiconductor film is formed by the film formation method according to the embodiment and a TFT in which an oxide semiconductor film is formed by the film formation method according to a reference example. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted. In order to facilitate understanding, the scale of each part in the drawings may differ from the actual scale.

[0010] In the directions of parallel, right-angle, orthogonal, horizontal, vertical, up / down, left / right, etc., deviations are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right-angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0011] <Semiconductor manufacturing equipment 1> 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus 1, which is an example of a semiconductor manufacturing apparatus (substrate processing apparatus) according to this embodiment. The semiconductor manufacturing apparatus 1 performs a plurality of processes (desired processes such as etching, film formation, ashing, etc.) on a substrate W. The semiconductor manufacturing apparatus 1 includes a processing section 2, a loading / unloading section 3, and a control section 4. The substrate W is not particularly limited, but may be, for example, a semiconductor wafer (hereinafter simply referred to as a wafer).

[0012] The loading / unloading unit 3 loads and unloads substrates, such as wafers, into and out of the processing unit 2. The processing unit 2 includes a plurality of (ten in this embodiment) process modules PM1 to PM10 that perform desired vacuum processing on the wafers. Wafers are serially transferred (sequentially transferred) to the plurality of process modules PM1 to PM10 by a first transfer device 11.

[0013] The first transfer device 11 includes a plurality of transfer modules TM1 to TM5. The transfer modules TM1 to TM5 include containers 30a, 30b, 30c, 30d, and 30e, respectively, which are hexagonal in plan view and maintained under vacuum. The transfer modules TM1 to TM5 also include articulated transfer mechanisms 31a, 31b, 31c, 31d, and 31e, which are provided in the containers 30a, 30b, 30c, 30d, and 30e, respectively.

[0014] Between the transfer mechanisms 31a, 31b, 31c, 31d, and 31e of the transfer modules TM1 to TM5, there are provided transfer units 41, 42, 43, and 44, respectively, as transfer buffers. The containers 30a, 30b, 30c, 30d, and 30e of the transfer modules TM1 to TM5 are connected to each other to form one transfer chamber 12.

[0015] The transfer chamber 12 extends in the Y direction in the figure. Five process modules PM1 to PM10 are connected to each side of the transfer chamber 12 via openable and closable gate valves G. The gate valves G of the process modules PM1 to PM10 are opened when the transfer modules TM1 to TM5 access the process modules PM1 to PM10, and are closed when the desired processing is being performed.

[0016] The loading / unloading section 3 is connected to one end of the processing section 2. The loading / unloading section 3 has an atmospheric transfer chamber 21, three load ports 22, an aligner module 23, two load lock modules LLM1 and LLM2, and a second transfer device 24. The load port 22, the aligner module 23, and the load lock modules LLM1 and LLM2 are connected to the atmospheric transfer chamber 21. The second transfer device 24 is provided inside the atmospheric transfer chamber 21.

[0017] The atmospheric transfer chamber 21 has a rectangular parallelepiped shape with its longitudinal direction in the X direction in the figure. Three load ports 22 are provided on the long side wall of the atmospheric transfer chamber 21 opposite the processing section 2. The load port 22 has a mounting table 25 and a transfer port 26. A FOUP 20, which is a substrate container that accommodates multiple wafers, is placed on the mounting table 25. The FOUP 20 on the mounting table 25 is connected to the atmospheric transfer chamber 21 in a sealed state via the transfer port 26. The aligner module 23 is connected to one of the short side walls of the atmospheric transfer chamber 21. Wafer alignment is performed in the aligner module 23.

[0018] The two load lock modules LLM1 and LLM2 enable wafer transfer between the atmospheric transfer chamber 21, which is at atmospheric pressure, and the transfer chamber 12, which is at a vacuum atmosphere, and are capable of varying the pressure between atmospheric pressure and a vacuum similar to that of the transfer chamber 12. Each of the two load lock modules LLM1 and LLM2 has two transfer ports. One of the transfer ports is connected to the long side wall of the atmospheric transfer chamber 21 on the processing unit 2 side via gate valve G2. The other transfer port is connected to the transfer chamber 12 of the processing unit 2 via gate valve G1.

[0019] The load lock module LLM1 is used to transfer wafers from the loading / unloading section 3 to the processing section 2. The load lock module LLM2 is used to transfer wafers from the processing section 2 to the loading / unloading section 3. Note that the load lock modules LLM1 and LLM2 may also be configured to perform processes such as degassing.

[0020] The second transfer device 24 in the atmospheric transfer chamber 21 has an articulated structure and transfers wafers to and from the FOUP 20 on the load port 22, the aligner module 23, and the load lock modules LLM1 and LLM2. Specifically, the second transfer device 24 removes an unprocessed wafer from the FOUP 20 on the load port 22, transfers it to the aligner module 23, and transfers the wafer from the aligner module 23 to the load lock module LLM1. The second transfer device 24 also receives a processed wafer that has been transferred from the processing unit 2 to the load lock module LLM2, and transfers it to the FOUP 20 on the load port 22. While FIG. 1 shows an example in which the second transfer device 24 has one pick for receiving a wafer, two picks may be used.

[0021] The first transfer device 11 and the second transfer device 24 constitute a transfer section of the semiconductor manufacturing equipment 1. In the processing section 2, process modules PM1, PM3, PM5, PM7, and PM9 are arranged in order from the load lock module LLM1 side on one side of the transfer chamber 12. In the processing section 2, process modules PM2, PM4, PM6, PM8, and PM10 are arranged in order from the load lock module LLM2 side on the other side of the transfer chamber 12. In the first transfer device 11, transfer modules TM1, TM2, TM3, TM4, and TM5 are arranged in order from the load lock modules LLM1 and LLM2 sides.

[0022] The transfer mechanism 31a of the transfer module TM1 is accessible to the load lock modules LLM1 and LLM2, the process modules PM1 and PM2, and the transfer unit 41. The transfer mechanism 31b of the transfer module TM2 is accessible to the process modules PM1, PM2, PM3, and PM4, and the transfer units 41 and 42.

[0023] The transfer mechanism 31c of the transfer module TM3 is accessible to the process modules PM3, PM4, PM5, and PM6, as well as the transfer units 42 and 43. The transfer mechanism 31d of the transfer module TM4 is accessible to the process modules PM5, PM6, PM7, and PM8, as well as the transfer units 43 and 44. The transfer mechanism 31e of the transfer module TM5 is accessible to the process modules PM7, PM8, PM9, and PM10, as well as the transfer unit 44.

[0024] The second transfer device 24 and the transfer modules TM1 to TM5 of the first transfer device 11 are configured as shown in Fig. 1. Therefore, as shown in Fig. 2, wafers removed from FOUP 20 are serially transferred in one direction along a substantially U-shaped path P in the processing unit 2, processed in each of the process modules PM1 to PM10, and returned to FOUP 20. That is, the wafers are serially transferred in the order of process modules PM1, PM3, PM5, PM7, PM9, PM10, PM8, PM6, PM4, and PM2, and undergo the desired processing.

[0025] The semiconductor manufacturing apparatus 1 can be used to manufacture, for example, a stacked film (MTJ (Magnetoresistive Tunnel Junction) film) used in MRAM (Magnetoresistive Random Access Memory). The manufacture of an MTJ film involves a number of desired processes, such as pre-cleaning, film formation, oxidation, heating, and cooling, and each of these desired processes is performed in one of the process modules PM1 to PM10. One or more of the process modules PM1 to PM10 may be a standby module where a wafer is kept waiting.

[0026] The control unit 4 controls each component of the semiconductor manufacturing equipment 1. The control unit 4 controls, for example, the transfer modules TM1 to TM5 (transfer mechanisms 31a to 31e), the second transfer device 24, the process modules PM1 to PM10, the load lock modules LLM1 and LLM2, the transfer chamber 12, and the gate valves G, G1, and G2. The control unit 4 is, for example, a computer.

[0027] <Substrate processing device 5> Next, the substrate processing apparatus 5 used in any of the process modules PM1 to PM10 will be described. Fig. 3 is a schematic cross-sectional view of the substrate processing apparatus 5, which is an example of a substrate processing apparatus in the semiconductor manufacturing apparatus according to this embodiment. Here, the substrate processing apparatus 5 is an apparatus that cools substrates W to an extremely low temperature state of 200K or less.

[0028] The substrate processing apparatus 5 includes a mounting table 60 for mounting a substrate W inside a processing chamber 50. The substrate processing apparatus 5 also includes a refrigeration heat transfer medium 80. The substrate processing apparatus 5 further includes an outer cylinder 85 for supporting the mounting table 60.

[0029] The mounting table 60 includes an upper electrostatic chuck 65 on which the substrate W is placed, and a lower plate 62. The electrostatic chuck 65 has a chuck electrode 66 embedded in a dielectric film 67. A predetermined potential is applied to the chuck electrode 66 from a DC power supply 72. The plate 62 is made of copper (Cu), which has high thermal conductivity.

[0030] The mounting table 60 is provided with an electrostatic chuck 65, which attracts the substrate W and fixes the substrate W to the upper surface of the mounting table 60. The mounting table 60 may be formed entirely from a single plate, or may be formed integrally by sintering or the like, other than being a laminate of the electrostatic chuck 65 and the plate 62.

[0031] Furthermore, the mounting table 60 has a through-hole 63 formed therein, which passes vertically through the electrostatic chuck 65 and the plate 62. The through-hole 63 is connected to a gap GAP below the mounting table 60. The coolant supplied to the gap GAP is supplied through the through-hole 63 between the upper surface of the mounting table 60 (electrostatic chuck) and the lower surface of the substrate W. By supplying the coolant through the through-hole 63 between the upper surface of the mounting table 60 (electrostatic chuck) and the lower surface of the substrate W, the cold energy of the coolant and the refrigeration heat medium 80 can be efficiently transferred to the substrate W.

[0032] 3, the coolant that has flowed through the coolant supply passage 81 is supplied to the lower surface of the substrate W via the through-hole 63. The coolant that has been discharged via the through-hole 63 flows through the coolant discharge passage 82 and is then discharged. The supply and discharge of the coolant are not limited to the example shown in FIG. 3, and other modes of supply and discharge of the coolant may be used. For example, an independent coolant passage different from the coolant supply passage 81 and the coolant discharge passage 82 may be provided for the through-hole 63, and the coolant may be supplied or discharged via the through-hole 63 via this independent coolant passage.

[0033] A protrusion 62a that protrudes toward the refrigeration heat transfer medium 80 is formed on the lower surface of the plate 62 that constitutes the mounting base 60. The protrusion 62a in the illustrated example is an annular protrusion that surrounds the central axis CL of the mounting base 60. Meanwhile, a recess 87 into which the protrusion 62a fits loosely is formed on the upper surface of the refrigeration heat transfer medium 80, i.e., the surface that faces the protrusion 62a of the mounting base 60. The recess 87 in the illustrated example has an annular shape that surrounds the central axis CL of the mounting base 60.

[0034] The mounting table 60 is supported by an outer cylinder 85. The outer cylinder 85 is arranged so as to cover the outer peripheral surface of the upper part of the refrigeration heat transfer medium 80. The upper part of the outer cylinder 85 enters the interior of the treatment vessel 50 and supports the mounting table 60 inside the treatment vessel 50. The outer cylinder 85 has a cylinder with an inner diameter slightly larger than the outer diameter of the refrigeration heat transfer medium 80. The outer cylinder 85 directly supports the mounting table 60. The outer cylinder 85 is formed of a metal such as stainless steel.

[0035] The substrate processing apparatus 5 includes a substantially cylindrical bellows 51 on the outside of an outer cylinder 85. The bellows 51 is a metal bellows structure that is expandable and contractible in the vertical direction. The bellows 51 surrounds the outer cylinder 85 and separates the internal space of the processing vessel 50, which can be depressurized, from the external space of the processing vessel 50.

[0036] The freezing heat transfer medium (also referred to as cold drink) 80 is fixed onto a refrigerator (not shown). The freezing heat transfer medium 80 and the refrigerator constitute a refrigeration device that cools the mounting table 60 to an extremely low temperature of 200 K or less. The refrigerator holds the freezing heat transfer medium 80 and cools the upper surface of the freezing heat transfer medium 80 to an extremely low temperature. From the viewpoint of cooling capacity, it is preferable that the refrigerator utilizes a GM (Gifford-McMahon) cycle. The upper part of the freezing heat transfer medium 80 is housed inside the processing vessel 50. The freezing heat transfer medium 80 is made of copper (Cu) or the like, which has high thermal conductivity. The freezing heat transfer medium 80 has an approximately cylindrical shape. The freezing heat transfer medium 80 is arranged so that its center coincides with the central axis CL of the mounting table 60.

[0037] The refrigerant heat transfer medium 80 has therein a refrigerant supply passage 81 that supplies a refrigerant (cooling gas) to a gap GAP between the refrigerant heat transfer medium 80 and the mounting table 60, and a refrigerant discharge passage 82 that discharges the refrigerant whose temperature has increased due to heat transfer from the mounting table 60. The refrigerant supply passage 81 and the refrigerant discharge passage 82 are each connected to the refrigerant supply device 71.

[0038] The coolant supplied from the coolant supply device 71 flows through the coolant supply passage 81 and is supplied to the gap GAP. On the other hand, the coolant discharged from the gap GAP flows through the coolant discharge passage 82 and is discharged to the coolant supply device 71. The coolant supply passage and the coolant discharge passage may be formed by the same passage. Helium (He) gas, which has high thermal conductivity, is preferably used as the coolant supplied to the gap GAP to cool the mounting table 60.

[0039] The refrigerant supply device 71 is connected to the control unit 4. The refrigerant supply device 71 supplies refrigerant at a set temperature to the refrigerant supply flow path 81. The refrigerant supply device 71 also collects the refrigerant that has returned from the refrigerant discharge flow path 82, adjusts the refrigerant to the set temperature, and supplies it from the refrigerant supply flow path 81.

[0040] The mounting table 60 has a temperature sensor 64 on the electrostatic chuck 65. The temperature sensor 64 is connected to a temperature converter 73. The temperature converter 73 converts a signal from the temperature sensor into a temperature signal and outputs it to the control unit 4. The control unit 4 measures the temperature of the mounting table 60 using the temperature sensor 64. The temperature sensor 64 is an example of a measurement unit that measures the temperature of the mounting table 60.

[0041] <Substrate processing device 6> Next, a substrate processing apparatus 6 used in any of the process modules PM1 to PM10 will be described. Fig. 4 is a schematic cross-sectional view of a substrate processing apparatus 56, which is an example of a substrate processing apparatus for semiconductor manufacturing equipment according to this embodiment. Here, the substrate processing apparatus 6 is an apparatus that forms an oxide semiconductor film of indium gallium zinc oxide (IGZO) on a substrate W while cooling the substrate W to an extremely low temperature of 200 K or less.

[0042] The substrate processing apparatus 6 is, for example, a PVD (Physical Vapor Deposition) apparatus that forms an oxide semiconductor film or the like on a substrate W, such as a semiconductor wafer, which is an object to be processed, inside a processing container 50 that forms an ultra-high vacuum and extremely low temperature atmosphere and performs substrate processing using a processing gas. Here, the ultra-high vacuum means, for example, a pressure atmosphere of 10 Pa or less, and the extremely low temperature means a temperature atmosphere of 200 K or less.

[0043] Similar to the substrate processing apparatus 5 (see FIG. 3), the substrate processing apparatus 6 includes a processing chamber 50, a mounting table 60 on which a substrate W is placed inside the processing chamber 50, and a refrigeration device (a refrigeration heat medium 80 and a refrigerator).

[0044] In the processing vessel 50, a plurality of target holders 91 are fixed above the mounting table 60. Different types of targets T are attached to the lower surface of each target holder 91.

[0045] The processing vessel 50 is configured so that the interior thereof can be depressurized to an ultra-high vacuum by operating an exhaust device (not shown) such as a vacuum pump. Furthermore, processing gases required for sputtering film formation (e.g., rare gases such as argon (Ar), krypton (Kr), and neon (Ne), or nitrogen (N) gas) are supplied to the processing vessel 50 via gas supply pipes (neither of which is shown) that communicate with a processing gas supply device.

[0046] An AC voltage or a DC voltage is applied to the target holder 91 from a plasma generation power supply (not shown). When the AC voltage is applied from the plasma generation power supply to the target holder 91 and the target T, plasma is generated inside the processing vessel 50, the rare gas and the like inside the processing vessel 50 are ionized, and the target T is sputtered by the ionized rare gas and the like. The sputtered atoms or molecules of the target T are deposited on the surface of the substrate W held on the mounting table 60 facing the target T.

[0047] The substrate processing apparatus 6 may also have a rotation device (not shown) that rotates the mounting table 60, a first lifting device (not shown) that raises and lowers the mounting table 60, and a second lifting device (not shown) that raises and lowers the refrigeration device (refrigeration heat medium 80 and refrigerator).

[0048] <Film forming method> Next, a film formation method according to this embodiment will be described with reference to Fig. 5. Fig. 5 is a flowchart showing an example of the film formation method according to this embodiment. Here, a method for forming an oxide semiconductor film when forming a thin film transistor (TFT) will be described.

[0049] In step S101, a substrate W having a gate electrode and a gate dielectric film formed thereon is prepared. First, a gate electrode is formed on the substrate W in a gate electrode film forming apparatus used in one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1. Next, a gate dielectric film is formed on the gate electrode in a gate dielectric film forming apparatus used in one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1. The substrate W having the gate electrode and gate dielectric film formed thereon is transferred by one of the transfer modules TM1 to TM5 to the substrate processing apparatus 5 (first chamber) shown in FIG. 3 and placed on the mounting table 60.

[0050] In step S102, the substrate W is cooled. Here, the substrate W placed on the mounting table 60 is cooled to an extremely low temperature of 200K or less using a refrigeration device (refrigeration heat medium 80 and refrigerator).

[0051] The substrate W cooled to the cryogenic temperature in step S102 is transferred to a film forming apparatus (second chamber) used in one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1 by one of the transfer modules TM1 to TM5.

[0052] In step S103, an oxide semiconductor film containing indium gallium zinc oxide (IGZO) is formed on the substrate W cooled to an extremely low temperature of 200 K or less. The film formation apparatus is, for example, a PVD apparatus. The oxide semiconductor film is formed in the transported film formation apparatus.

[0053] Thereafter, the substrate W on which the oxide semiconductor film has been formed is transferred by one of the transfer modules TM1 to TM5 to one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1, where source electrodes, drain electrodes, etc. are formed on the oxide semiconductor film, thereby forming TFTs on the substrate W. The substrate W is then transferred to one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1 or to an annealing equipment outside the semiconductor manufacturing equipment 1, where it is subjected to a post-annealing treatment. As a result, the amorphous oxide semiconductor film formed in step S103 is annealed.

[0054] Next, another film formation method according to this embodiment will be described with reference to Fig. 6. Fig. 6 is a flowchart showing another example of the film formation method according to this embodiment. Here, a method for forming an oxide semiconductor film when forming a TFT will be described.

[0055] In step S201, a substrate W having a gate electrode and a gate dielectric film formed thereon is prepared. First, a gate electrode is formed on the substrate W in a gate electrode film forming apparatus used in one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1. Next, a gate dielectric film is formed on the gate electrode in a gate dielectric film forming apparatus used in one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1. The substrate W having the gate electrode and gate dielectric film formed thereon is transferred by one of the transfer modules TM1 to TM5 to the substrate processing apparatus 6 (second chamber) shown in FIG. 4 and placed on the mounting table 60.

[0056] In step S202, an oxide semiconductor film containing indium gallium zinc oxide (IGZO) is formed on the substrate W while the substrate W is cooled to an extremely low temperature of 200 K or less. Here, a refrigeration device (refrigeration heat medium 80 and refrigerator) is used to cool the substrate W placed on the mounting table 60 to an extremely low temperature of 200 K or less, and the target T is sputtered to form an oxide semiconductor film on the surface of the substrate W held on the mounting table 60.

[0057] Thereafter, the substrate W on which the oxide semiconductor film has been formed is transferred by one of the transfer modules TM1 to TM5 to one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1, where source electrodes, drain electrodes, etc. are formed on the oxide semiconductor film, thereby forming TFTs on the substrate W. The substrate W is then transferred to one of the process modules PM1 to PM10 of the semiconductor manufacturing equipment 1 or to an annealing equipment outside the semiconductor manufacturing equipment 1, where it is subjected to a post-annealing treatment. As a result, the amorphous oxide semiconductor film formed in step S202 is annealed.

[0058] 5, the cooling of the substrate W in step S102 and the formation of the oxide semiconductor film in step S103 are performed in different chambers, but this is not limiting. For example, using the substrate processing apparatus 6 (see FIG. 4), the cooling of the substrate W in step S102 and the formation of the oxide semiconductor film in step S103 may be performed in the same chamber.

[0059] For example, in step S102, the refrigeration device (refrigeration heat medium 80 and refrigerator) is raised using a second lifting device (not shown), thermally connecting the plate 62 and the refrigeration heat medium 80, and cooling the substrate W placed on the mounting table 60.

[0060] Then, in step S103, the freezing device (freezing heat medium 80 and refrigerator) is lowered using a second lifting device (not shown), the connection between the plate 62 and the freezing heat medium 80 is disconnected, and sputtering is performed while rotating the mounting table 60 using a rotation device (not shown), and an oxide semiconductor film may be formed on the substrate W.

[0061] <tft> Next, an example of a TFT 300 having an oxide semiconductor film 340 will be described with reference to Fig. 7. Fig. 7 is a diagram showing an example of a TFT 300 according to an embodiment. Fig. 7(a) shows a plan view of the TFT 300, and Fig. 7(b) shows a cross-sectional view of the TFT 300.

[0062] The TFT 300 includes a substrate 310 , a gate electrode 320 , a gate dielectric film 330 , an oxide semiconductor film 340 , a gate electrode 350 , a drain electrode 360 ​​, a source electrode 370 , and an insulating film 380 .

[0063] The substrate 310 is formed, for example, by nitriding a silicon substrate.

[0064] The gate electrode 320 is a conductive film formed on the substrate 310. The gate electrode 320 is made of, for example, TiN.

[0065] The gate dielectric film 330 is a dielectric film formed on the gate electrode 320. The gate dielectric film 330 is formed by laminating, for example, SiCN and AlO.

[0066] The oxide semiconductor film 340 is an oxide semiconductor film formed on the gate dielectric film 330. The oxide semiconductor film 340 is made of indium gallium zinc oxide (IGZO). In the TFT 300 of this embodiment, the oxide semiconductor film 340 is formed at an extremely low temperature, as shown in the flowcharts of FIGS. 5 and 6.

[0067] The gate electrode 350 is formed so as to be connected to the gate electrode 320. The drain electrode 360 ​​and the source electrode 370 are formed on the oxide semiconductor film 340. The drain electrode 360 ​​and the source electrode 370 are formed to be spaced apart from each other so as to form a channel 390 between the drain electrode 360 ​​and the source electrode 370. The gate electrode 350, the drain electrode 360, and the source electrode 370 are formed of, for example, TiN or W.

[0068] The insulating film 380 is an insulating film formed on the oxide semiconductor film 340. The insulating film 380 is formed of, for example, SiO. Note that the gate electrode 350, the drain electrode 360, and the source electrode 370 are formed such that their upper ends are exposed from the upper surface of the insulating film 380.

[0069] <I-V Characteristics of TFT> Next, the I-V characteristics of the TFT 300 will be described using FIGS. 8 and 9.

[0070] First, the I-V characteristics of the TFT 300 in which the oxide semiconductor film 340 is formed by the film formation method according to the reference example will be described using FIG. 8. FIG. 8 is an example of a graph showing the I-V characteristics of the TFT 300 in which the oxide semiconductor film 340 is formed by the film formation method according to the reference example. The horizontal axis represents the gate voltage Vg, and the vertical axis represents the drain current Id.

[0071] In addition, in the TFT 300 according to the reference example shown in FIG. 8, the oxide semiconductor film 340 is formed at room temperature (room temperature). In addition, in the TFT 300 according to the reference example shown in FIG. 8, after the TFT 300 is formed, the substrate W is subjected to an annealing treatment. The I-V characteristics of the TFT 300 according to the reference example before the annealing treatment are shown by a broken line, and the I-V characteristics of the TFT 300 according to the reference example after the annealing treatment are shown by a solid line.

[0072] The I-V characteristics (broken line) of the TFT 300 before the annealing treatment shift the threshold voltage to the negative side due to the influence of oxygen defects in the oxide semiconductor film 340. In contrast, in the I-V characteristics (solid line) of the TFT 300 after the annealing treatment, the threshold voltage can be shifted to the positive side compared to before the annealing treatment. However, even in the TFT 300 after the annealing treatment, a drain current Id occurs when the gate voltage Vg is 0 V, and the TFT 300 is in an on state.

[0073] Therefore, in the TFT 300 according to the reference example, a leakage current occurs when the gate voltage Vg is 0 V. Or, in the TFT 300 according to the reference example, it is necessary to apply an offset voltage for turning off the TFT 300 to the gate voltage Vg.

[0074] Next, the IV characteristics of a TFT 300 in which an oxide semiconductor film 340 is formed by the film formation method according to this embodiment will be described in comparison with a reference example using Fig. 9. Fig. 9 is an example of a graph showing the IV characteristics of a TFT 300 in which an oxide semiconductor film 340 is formed by the film formation method according to this embodiment and a TFT 300 in which an oxide semiconductor film 340 is formed by the film formation method according to the reference example. The horizontal axis represents gate voltage Vg, and the vertical axis represents drain current Id.

[0075] 9 according to this embodiment, the oxide semiconductor film 340 was formed at an extremely low temperature of 100 K, and the substrate W was annealed after the TFT 300 was formed. Also, in the TFT 300 according to the reference example shown in FIG. 9, the oxide semiconductor film 340 was formed at room temperature, and the substrate W was annealed after the TFT 300 was formed. The IV characteristics of the TFT 300 according to the reference example after the annealing are indicated by a dashed line, and the IV characteristics of the TFT 300 according to this embodiment after the annealing are indicated by a solid line.

[0076] In the film formation method according to this embodiment, the oxide semiconductor film 340 is formed at an extremely low temperature of 200 K or less. This makes it possible to suppress the loss of oxygen atoms (O) from the oxide semiconductor film 340 when the oxide semiconductor film 340 is formed on the substrate W by sputtering, thereby reducing oxygen defects in the oxide semiconductor film 340. Therefore, as shown in FIG. 9 , the critical voltage of the TFT 300 according to this embodiment after annealing (see solid line) can be shifted to the positive side compared to the TFT 300 according to the reference example after annealing (see dashed line).

[0077] Furthermore, in the TFT 300 according to this embodiment after the annealing treatment, it is possible to prevent the occurrence of leakage current (drain current Id) when the gate voltage Vg is 0 V. That is, the TFT 300 according to this embodiment can be a normally-off TFT. Furthermore, the TFT 300 according to this embodiment can eliminate the need to apply an offset voltage.

[0078] The temperature when depositing the oxide semiconductor film 340 is preferably an extremely low temperature of 200 K or less. This can suppress oxygen defects in the oxide semiconductor film 340. The temperature when depositing the oxide semiconductor film 340 is more preferably 100 K or more and 150 K or less. This can further suppress oxygen defects in the oxide semiconductor film 340.

[0079] Although the film forming method and the substrate processing apparatus have been described above using the above-mentioned embodiments, the film forming method and the substrate processing apparatus according to the present invention are not limited to the above-mentioned embodiments, and various modifications and improvements are possible within the scope of the present invention. The features described in the above-mentioned embodiments can be combined within a range that does not contradict each other. [Explanation of symbols]

[0080] 1. Semiconductor manufacturing equipment (substrate processing equipment) 4. Control section 5. Substrate processing equipment 6. Substrate processing equipment 50 Processing vessel (chamber) 60 Mounting table 80 Refrigeration heat transfer medium 91 Target Holder 310 Substrate 320 gate electrode 330 Gate dielectric film 340 Oxide semiconductor film 350 gate electrode 360 drain electrode 370 Source Electrode 380 insulating film 390 channels T Target W substrate PM1~PM10 Process Modules< / tft>

Claims

1. a step of cooling a substrate having a gate electrode film and a gate dielectric film on the gate electrode film to a cryogenic temperature of 100 K or more and 150 K or less; depositing an oxide semiconductor film on the cooled substrate over the gate dielectric film; forming a drain electrode and a source electrode on the oxide semiconductor film to form a thin film transistor on the substrate; and subjecting the substrate to an annealing treatment, the thin film transistor after the annealing treatment is a normally-off thin film transistor. Substrate processing method.

2. The step of cooling the substrate to the cryogenic temperature comprises: The substrate is processed in a first chamber that cools the substrate; The step of forming the oxide semiconductor film on the substrate includes: The substrate is processed in a second chamber in which the oxide semiconductor film is formed. The substrate processing method according to claim 1 .

3. The step of cooling the substrate to the cryogenic temperature state and the step of forming the oxide semiconductor film on the substrate include: processed in the same chamber, The substrate processing method according to claim 1 .

4. the oxide semiconductor film is an indium gallium zinc oxide film; The substrate processing method according to any one of claims 1 to 3.

5. a gate electrode film; a gate dielectric film formed on the gate electrode film; an oxide semiconductor film formed on the gate dielectric film; a drain electrode and a source electrode formed on the oxide semiconductor film; and a substrate processing apparatus for forming the oxide semiconductor film used in a thin film transistor, the substrate processing apparatus comprising: a first chamber for cooling the substrate to a cryogenic temperature of 100 K or more and 150 K or less; a second chamber in which the oxide semiconductor film is formed on the substrate; a control unit, The control unit cooling the substrate having the gate electrode film and the gate dielectric film on the gate electrode film to a cryogenic temperature of 100 K or more and 150 K or less in the first chamber; depositing the oxide semiconductor film on the gate dielectric film of the cooled substrate in the second chamber; The thin film transistor after the annealing treatment is a normally-off thin film transistor. Substrate processing equipment.

6. a gate electrode film; a gate dielectric film formed on the gate electrode film; an oxide semiconductor film formed on the gate dielectric film; a drain electrode and a source electrode formed on the oxide semiconductor film; and a substrate processing apparatus for forming the oxide semiconductor film used in a thin film transistor, the substrate processing apparatus comprising: a mounting table on which a substrate is placed; a refrigeration device that cools the mounting table; a target holder for holding a target to be sputtered; a control unit, The control unit forming the oxide semiconductor film on the gate dielectric film of the substrate while cooling the substrate having the gate electrode film and the gate dielectric film on the gate electrode film to a cryogenic temperature of 100 K or more and 150 K or less; The thin film transistor after the annealing treatment is a normally-off thin film transistor. Substrate processing equipment.

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