Substrate Processing Equipment

Abstract

To provide a technique capable of improving uniformity of a temperature distribution on a substrate.SOLUTION: In one exemplary embodiment, there is provided a substrate processing apparatus. The substrate processing apparatus includes a processing chamber, a substrate support stage, a first supply pipe, a second supply pipe, a first partition, a second partition, a first collection pipe, a second collection pipe, a piezoelectric element, a first thermoelectric element, and a drive circuit. The second supply pipe is configured to supply a heat transfer medium to a second recess. The piezoelectric element is disposed around an opening of a second nozzle to reduce a cross-sectional area of the opening of the second nozzle in accordance with a voltage applied thereto. The first thermoelectric element is disposed to generate first electromotive force corresponding to a temperature difference between a heat transfer medium in the first collection pipe and a heat transfer medium in the second collection pipe. The drive circuit is configured to apply a voltage to the piezoelectric element corresponding to a magnitude of the first electromotive force.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Substrate processing apparatuses may include a substrate support stage capable of controlling the temperature of a substrate placed thereon. The substrate processing apparatus described in Patent Document 1 listed below controls the temperature of the substrate by supplying a heat transfer medium adjusted to a first temperature and a heat transfer medium adjusted to a second temperature higher than the first temperature to the substrate support stage. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-12593 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for increasing the uniformity of temperature distribution on a substrate. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a processing chamber, a substrate support pedestal, a first supply pipe, a second supply pipe, a first partition, a second partition, a first recovery pipe, a second recovery pipe, a piezoelectric element, a first thermoelectric element, and a drive circuit. The substrate support pedestal is provided within the processing chamber. The substrate support pedestal has an upper surface and a lower surface. The upper surface supports a substrate placed thereon. The lower surface is the surface opposite the upper surface. The substrate support pedestal provides a first recess and a second recess. The first recess and the second recess open downward. The first supply pipe includes a first nozzle. The first nozzle opens upward within the first recess. The first supply pipe is configured to supply a heat transfer medium to the first recess. The second supply pipe includes a second nozzle. The second nozzle opens upward within the second recess. The second supply pipe is configured to supply the heat transfer medium to the second recess. The first partition wall forms a first space together with the substrate support table. The first space includes a first recess. The second partition wall forms a second space together with the substrate support table. The second space includes a second recess. The first recovery pipe is configured to recover the heat transfer medium from the first space. The second recovery pipe is configured to recover the heat transfer medium from the second space. The piezoelectric element is arranged around the opening of the second nozzle to reduce the cross-sectional area of ​​the opening of the second nozzle in response to a voltage applied thereto. The first thermoelectric element is arranged between the first recovery pipe and the second recovery pipe to generate a first electromotive force in response to a temperature difference between the heat transfer medium in the first recovery pipe and the heat transfer medium in the second recovery pipe. The drive circuit is configured to apply a voltage to the piezoelectric element in response to the magnitude of the first electromotive force. [Effects of the Invention]

[0006] According to one exemplary embodiment, a technique is provided for increasing the uniformity of temperature distribution on a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram illustrating an example of the configuration of a plasma processing system according to an exemplary embodiment; [Figure 2] 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to an exemplary embodiment; [Figure 3] 2 is an enlarged cross-sectional view of a portion of a substrate support pedestal according to an exemplary embodiment. [Figure 4] FIG. 4(a) is a perspective view of a base according to one exemplary embodiment, and FIG. 4(b) is a partially cutaway perspective view of the base according to one exemplary embodiment. [Figure 5] FIG. 2 is an exploded perspective view schematically illustrating a base and a heat exchanger according to an exemplary embodiment. [Figure 6] FIG. 1 is a perspective view of a heat exchanger according to an exemplary embodiment. [Figure 7] FIG. 7(a) is a plan view of a cell portion of an example heat exchanger, and FIG. 7(b) is a perspective view of the cell portion of the example heat exchanger. [Figure 8] 2 is an enlarged cross-sectional view of a portion of a substrate support pedestal according to an exemplary embodiment. [Figure 9] Each of (a) and (b) of Figure 9 is an end view that schematically illustrates the configuration of a piezoelectric element according to one example embodiment. [Figure 10] 1 is an enlarged cross-sectional view of a portion of a substrate support pedestal according to another exemplary embodiment. [Figure 11] FIG. 2 is a circuit diagram illustrating an example of a drive circuit. [Figure 12] Each of (a) and (b) of Figure 12 is an end view that schematically illustrates the configuration of a piezoelectric element according to another exemplary embodiment. [Figure 13] Each of (a) and (b) of FIG. 13 is an end view schematically illustrating the configuration of a piezoelectric element according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an example of the configuration of a substrate processing system. In one embodiment, the substrate processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 is an example of a substrate processing apparatus, and the substrate processing system is, in one example, a plasma processing system. The plasma processing apparatus 1 includes a processing chamber 10, a substrate support unit 11, and a plasma generation unit 14. The processing chamber 10 has a plasma processing space. The processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 14 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the processing chamber 10. The processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the processing chamber 10, and the substrate support 11. The processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the processing chamber 10. In one embodiment, the plasma processing apparatus 1 may further include a circulation device C. Details of the circulation device C will be described later.

[0014] The substrate support unit 11 includes a substrate support pedestal 12 and a ring assembly 112. The substrate support pedestal 12 has a central region 12a for supporting a substrate W and an annular region 12b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 12b of the substrate support pedestal 12 surrounds the central region 12a of the substrate support pedestal 12 in a planar view. The substrate W is disposed on the central region 12a of the substrate support pedestal 12, and the ring assembly 112 is disposed on the annular region 12b of the substrate support pedestal 12 so as to surround the substrate W on the central region 12a of the substrate support pedestal 12. Therefore, the central region 12a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 12b is also referred to as a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the substrate support 12 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive member. The conductive member of the base 120 may function as a lower electrode. The electrostatic chuck 121 is disposed on the base 120. The electrostatic chuck 121 includes a ceramic member 121a and an electrostatic electrode 121b disposed within the ceramic member 121a. The ceramic member 121a has a central region 12a. In one embodiment, the ceramic member 121a also has an annular region 12b. Note that the annular region 12b may also be provided by another member surrounding the electrostatic chuck 121, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 121 and the annular insulating member. At least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 121a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 120 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 121b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0018] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0019] The power supply 30 includes an RF power supply 31 coupled to the processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 14. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0020] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0021] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0022] The power supply 30 may also include a DC power supply 32 coupled to the process chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0023] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0024] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0025] The substrate support pedestal 12 will now be described in detail with reference to Figure 3. As described above, the substrate support pedestal 12 is provided within the processing chamber 10. Figure 3 is an enlarged cross-sectional view of a portion of the substrate support pedestal according to one exemplary embodiment.

[0026] The substrate support table 12 has a substantially disk-like shape. As shown in FIG. 3 , the substrate support table 12 includes an upper surface 12c and a lower surface 12d. The upper surface 12c supports the substrate W placed thereon. The upper surface 12c includes a central region 12a and an annular region 12b. In one embodiment, the central region 12a is the upper surface of the electrostatic chuck 121, and the annular region 12b is a peripheral region of the upper surface of the base 120. The lower surface 12d is the surface opposite to the upper surface 12c. In one embodiment, the lower surface 12d is the lower surface of the base 120. The substrate support table 12 provides a plurality of recesses 12h. The plurality of recesses 12h are open downward. In one embodiment, the plurality of recesses 12h are provided by the base 120.

[0027] Fig. 4(a) is a perspective view of a base according to one example embodiment. As shown in Fig. 4(a), the base 120 has a substantially disk shape and has a first main surface 120a and a second main surface 120b facing each other. As shown in Fig. 3, the electrostatic chuck 121 is bonded to the first main surface 120a of the base 120 via an adhesive layer 121c. As shown in Fig. 4(a), the second main surface 120b of the base 120 forms the lower surface 12d of the substrate support table 12.

[0028] FIG. 4(b) is a partially cutaway perspective view of a base according to one exemplary embodiment. FIG. 4(b) shows the base 120 with an upper portion including the first main surface 120a removed. As shown in FIGS. 4(a) and 4(b), the base 120 may include a main portion 120m and a flange portion 120f. The main portion 120m is a portion having a substantially circular planar shape. The flange portion 120f is a portion having an annular planar shape. The flange portion 120f is continuous with the main portion 120m so as to surround the outer periphery of the main portion 120m.

[0029] 4(b), the main portion 120m of the base 120 provides the above-mentioned plurality of recesses 12h. The plurality of recesses 12h extend along the thickness direction of the base 120 and open at the second main surface 120b.

[0030] Each of the plurality of recesses 12h may have a substantially rectangular planar shape in plan view, the width of which increases from the center of the base 120 toward the outside. The plurality of recesses 12h are arranged two-dimensionally so as not to include one another. Note that the planar shape of the plurality of recesses 12h is not limited to a rectangle, and may be a circle or a polygon such as a triangle or hexagon.

[0031] As shown in FIGS. 3 and 4(b), the substrate support table 12 may have a plurality of zones 12z. Each of the plurality of zones 12z may include one or more recesses 12h from among the plurality of recesses 12h. As shown in FIG. 4(b), each of the plurality of zones 12z is provided in a plurality of regions concentric with the central axis of the substrate support table 12. The plurality of regions includes a circular region including the central axis of the substrate support table 12 and one or more annular regions outside the circular region. At least one of the plurality of zones 12z is provided in each of the circular region and the one or more annular regions. In one embodiment, the circular region is composed of one zone 12z. Furthermore, each of the plurality of annular regions is composed of a plurality of zones 12z arranged along the circumferential direction.

[0032] The base 120 may be made of metal. The base 120 may be made of stainless steel (e.g., SUS304). Stainless steel has low thermal conductivity, which prevents heat from the electrostatic chuck 121 from escaping through the base 120. The base 120 may be made of aluminum. Aluminum has low resistivity, which can reduce power loss in the base 120 when the base 120 is used as a high-frequency electrode.

[0033] Returning to Fig. 3, as shown in Fig. 3, the plasma processing apparatus 1 includes a plurality of supply pipes 50, a plurality of partition walls 60, and a plurality of recovery pipes 70. In one embodiment, the plurality of supply pipes 50, the plurality of partition walls 60, and the plurality of recovery pipes 70 are provided by a heat exchanger 16.

[0034] 5 is an exploded perspective view schematically illustrating a base and a heat exchanger according to an exemplary embodiment. As shown in FIG. 5, the substrate support 11 may further include a heat exchanger 16. The base 120 may be mounted on the heat exchanger 16. A portion of each of the plurality of supply pipes 50, the plurality of partition walls 60, and a portion of each of the plurality of recovery pipes 70 may be provided by the heat exchanger 16.

[0035] The heat exchanger 16 will be described below with reference to Figures 3, 6, and 7. Figure 6 is a perspective view of a heat exchanger according to an exemplary embodiment. Figure 7(a) is a plan view of a cell portion of the heat exchanger, and Figure 7(b) is a perspective view of a cell portion of the heat exchanger.

[0036] The heat exchanger 16 may include a main portion 16m and a flange portion 16f. The main portion 16m is a region having a substantially circular planar shape. The flange portion 16f is a region having an annular planar shape and is continuous with the main portion 16m so as to surround the outer periphery of the main portion 16m. As shown in FIG. 3, the flange portion 120f of the base 120 is disposed on the flange portion 16f of the heat exchanger 16. An O-ring 12e is sandwiched between the flange portion 16f and the flange portion 120f. The O-ring 12e is pressed between the flange portion 16f and the flange portion 120f to seal the gap between the flange portion 16f and the flange portion 120f.

[0037] The main portion 16m of the heat exchanger 16 provides a plurality of cell portions 16c. The cell portions 16c are respectively arranged below the recesses 12h. Each of the cell portions 16c may have a substantially rectangular planar shape in plan view, with its width increasing from the center of the heat exchanger 16 toward the outside. Each of the cell portions 16c provides a substantially rectangular space 16s in plan view. The spaces 16s provided by the cell portions 16c are defined by partition walls 60. In one embodiment, the spaces 16s include a first space 16x and a second space 16y. The planar shape of the cell portions 16c is not limited to a rectangle, and may be a circle or a polygon such as a triangle or hexagon.

[0038] As shown in FIGS. 6, 7(a), and 7(b), each of the multiple cells 16c includes one of the multiple supply pipes 50, one of the multiple recovery pipes 70, and one of the multiple partition walls 60. In each cell 16c, the supply pipe 50 extends so that its central axis coincides with the center line of the space 16s. The multiple supply pipes 50 extend parallel to one another. The multiple supply pipes 50 are configured to supply a heat transfer medium to each of the multiple recesses 12h. The upper end portion of each supply pipe 50 provides a nozzle 51 in a corresponding recess 12h among the multiple recesses 12h. The nozzle 51 opens upward in the corresponding recess 12h.

[0039] As shown in FIG. 3 , in each cell 16c, at least one partition 60 forms at least one space 16s together with the substrate support pedestal 12. The space 16s includes a recess 12h. The partitions 60 form a plurality of spaces 16s together with the substrate support pedestal 12. The spaces 16s each include a plurality of recesses 12h. Each of the partitions 60 is connected to the second main surface 120b of the base 120 so as to communicate with the corresponding recess 12h among the plurality of recesses 12h. Each of the partitions 60 surrounds the outer circumferential surface of the supply pipe 50 to provide a space 16s around the outer circumferential surface of the supply pipe 50.

[0040] The multiple recovery pipes 70 are configured to recover the heat transfer medium from the multiple spaces 16s, respectively. As shown in FIG. 7(a), each of the multiple recovery pipes 70 includes an open end 70a. In each cell 16c, the open end 70a of the recovery pipe 70 is connected to the partition wall 60 so that the flow path of the recovery pipe 70 communicates with the bottom of the space 16s. That is, the multiple recovery pipes 70 communicate with the multiple recesses 12h via the multiple spaces 16s, respectively. The multiple recovery pipes 70 are connected to the multiple spaces 16s, respectively.

[0041] The plasma processing apparatus 1 further includes a circulation device C (see FIG. 2). The circulation device C may be a chiller unit. Therefore, the heat transfer medium may be a refrigerant. The circulation device C adjusts the temperature of the heat transfer medium. The circulation device C is provided outside the processing chamber 10. The circulation device C is connected to a plurality of supply pipes 50 and a plurality of recovery pipes 70. The circulation device C is configured to supply the heat transfer medium to the plurality of supply pipes 50 and recover the heat transfer medium from the plurality of recovery pipes 70.

[0042] The heat exchanger 16 may be formed from a material containing resin, ceramic, or metal as a main component. The heat exchanger 16 may be formed from a material having low thermal conductivity, such as ceramic or resin, to suppress the influence of adjacent cell portions 16c. The heat exchanger 16 may be formed from different materials in parts to partially change the strength and / or thermal conductivity of the heat exchanger 16. The heat exchanger 16 may be formed from the same material as the base 120. The base 120 and the heat exchanger 16 may be integrally formed using, for example, a 3D printer.

[0043] Reference is now made to FIG. 8, which is an enlarged cross-sectional view of a portion of the substrate support table according to one exemplary embodiment. As shown in FIG. 8, the plurality of recesses 12h includes a first recess 12x and a plurality of second recesses 12y. The plurality of spaces 16s includes a first space 16x and a plurality of second spaces 16y. The first space 16x includes a first recess 12x, and each of the plurality of second spaces 16y includes a corresponding second recess 12y among the plurality of second recesses 12y. The first space 16x is defined by a corresponding first partition wall 60x among the plurality of partition walls 60. Each of the plurality of second spaces 16y is defined by a corresponding second partition wall 60y among the plurality of partition walls 60.

[0044] Furthermore, the plurality of zones 12z includes a first zone 12zx and one or more second zones 12zy. In one example, the plurality of zones 12z includes a plurality of second zones 12zy. The first zone 12zx includes at least a first recess 12x. Each of the plurality of second zones 12zy includes one or more second recesses 12y. In one example, each of the plurality of second zones 12zy includes a plurality of second recesses 12y.

[0045] The plurality of supply pipes 50 includes a first supply pipe 50x and a plurality of second supply pipes 50y. The first supply pipe 50x provides a first nozzle 51x as the nozzle 51 in the first recess 12x. Each of the plurality of second supply pipes 50y provides a second nozzle 51y as the nozzle 51 in a corresponding second recess 12y among the plurality of second recesses 12y.

[0046] The plurality of recovery pipes 70 includes a first recovery pipe 70x and a plurality of second recovery pipes 70y. The first recovery pipe 70x is connected to the first space 16x. The plurality of second recovery pipes 70y are connected to the plurality of second spaces 16y, respectively.

[0047] The plasma processing apparatus 1 includes one or more piezoelectric elements 52. In one embodiment, the plasma processing apparatus 1 includes a plurality of piezoelectric elements 52. The plurality of piezoelectric elements 52 are arranged around the plurality of second nozzles 51y, respectively. Therefore, the number of piezoelectric elements 52 is the same as the number of second nozzles 51y. Each of the plurality of piezoelectric elements 52 reduces the cross-sectional area of ​​the opening of the corresponding second nozzle 51y in accordance with the voltage applied thereto. Hereinafter, the second supply pipe 50y and the second recovery pipe 70y belonging to each of the plurality of cell units 16c will be referred to as the second supply pipe 50yi and the second recovery pipe 70yi. Furthermore, the piezoelectric element 52 provided around the second nozzle 51y of the second supply pipe 50yi will be referred to as the piezoelectric element 52i.

[0048] The plasma processing apparatus 1 includes one or more first thermoelectric elements 80x. In one embodiment, the plasma processing apparatus 1 includes a plurality of first thermoelectric elements 80x. Each of the plurality of first thermoelectric elements 80x generates a first electromotive force V in response to a temperature difference between the heat transfer medium in the first recovery pipe 70x and the heat transfer medium in the corresponding second recovery pipe 70y. B The first thermoelectric elements 80x are arranged between the first recovery pipe 70x and the corresponding second recovery pipe 70y so as to generate a voltage Vcc. The number of first thermoelectric elements 80x may be the same as the number of second recovery pipes 70y. In this case, each of the multiple first thermoelectric elements 80x is arranged between the first recovery pipe 70x and a corresponding second recovery pipe 70y among the multiple second recovery pipes 70y. Alternatively, the number of first thermoelectric elements 80x may be the same as the number of second zones 12zy. In this case, each of the multiple first thermoelectric elements 80x is arranged between the first recovery pipe 70x and one second recovery pipe 70y in the corresponding second zone 12zy. Hereinafter, a first thermoelectric element 80x arranged between a first recovery pipe 70x and a second recovery pipe 70yi will be referred to as a first thermoelectric element 80xi.

[0049] The plasma processing apparatus 1 includes one or more drive circuits 90. In one embodiment, the plasma processing apparatus 1 includes a plurality of drive circuits 90. Each of the plurality of drive circuits 90 is configured to drive a first electromotive force V generated by the first thermoelectric element 80xi.B Alternatively, each of the plurality of drive circuits 90 is configured to apply a voltage corresponding to the magnitude of the first electromotive force V generated by the first thermoelectric element 80xi to the piezoelectric element 52i. B A voltage according to the magnitude of the second recovery pipe 70yi may be applied to the plurality of piezoelectric elements 52 in the second zone 12zy to which the second recovery pipe 70yi belongs.

[0050] In the plasma processing apparatus 1, a voltage corresponding to the temperature difference between the heat transfer medium in the first recovery pipe 70x and the heat transfer medium in the second recovery pipe 70y is applied to the corresponding piezoelectric element 52, and the cross-sectional area of ​​the opening of the corresponding second nozzle 51y decreases in accordance with the temperature difference. When the flow rate of the heat transfer medium supplied to the corresponding second recess 12y increases in accordance with the decrease in the cross-sectional area of ​​the opening of the second nozzle 51y, the temperature of the portion of the substrate support table 12 including the second recess 12y decreases. As a result, the temperature difference between the portion of the substrate support table 12 including the first recess 12x and the portion of the substrate support table 12 including the second recess 12y decreases. Therefore, the plasma processing apparatus 1 improves the uniformity of the temperature distribution of the substrate W on the substrate support table 12.

[0051] Reference will now be made to FIG. 9. (a) and (b) of FIG. 9 are end views each schematically illustrating the configuration of a piezoelectric element according to one exemplary embodiment. In one embodiment, the piezoelectric element 52 may include a piezoelectric body 52a and a pair of electrodes 52b. As an example, the pair of electrodes 52b is composed of an anode 52m and a cathode 52n. The piezoelectric body 52a is a ring-shaped piezoelectric body arranged around the opening of the second nozzle 51y. The pair of electrodes 52b are provided along the inner and outer peripheries of the piezoelectric body 52a. As an example, the anode 52m is provided along the inner periphery of the piezoelectric body 52a, and the cathode 52n is provided along the outer periphery of the piezoelectric body 52a.

[0052] FIG. 9A shows the piezoelectric element 52 when no voltage is applied thereto. The diameter of the opening of the second nozzle 51y when no voltage is applied thereto is D1. FIG. 9B shows the piezoelectric element 52 when a voltage is applied thereto in one exemplary embodiment. The diameter of the opening of the second nozzle 51y when a voltage is applied thereto is D2. As shown in FIGS. 9A and 9B, when a voltage is applied thereto, the piezoelectric element 52 expands both inward and outward. That is, when a voltage is applied thereto, the inner diameter D2 of the piezoelectric element 52 becomes smaller than D1. Therefore, when a voltage is applied to the piezoelectric element 52, the flow rate of the heat transfer medium supplied from the second supply pipe 50y to the corresponding second recess 12y increases.

[0053] 10 and 11 will be referred to below. FIG. 10 is an enlarged cross-sectional view of a portion of a substrate support table according to another exemplary embodiment. FIG. 11 is a circuit diagram showing an example of a drive circuit. The plasma processing apparatus 1A shown in FIG. 10 is another example of a substrate processing apparatus. The plasma processing apparatus 1A further includes a second thermoelectric element 80y. The second thermoelectric element 80y generates a second electromotive force V according to the temperature difference between the heat transfer medium in the first supply pipe 50x and the heat transfer medium in the first recovery pipe 70x. A Each of the plurality of drive circuits 90 is disposed between the first supply pipe 50x and the first recovery pipe 70x so as to generate a second electromotive force V A and the first electromotive force V generated by the first thermoelectric element 80xi B Voltage V according to the difference between p Alternatively, each of the plurality of drive circuits 90 is configured to apply a second electromotive force V A and the first electromotive force V generated by the first thermoelectric element 80xi B Voltage V according to the difference between p may be applied to the plurality of piezoelectric elements 52 in the second zone 12zy to which the second recovery pipe 70yi belongs.

[0054] 11, in one embodiment, each of the plurality of drive circuits 90 may be a differential amplifier circuit. Each of the plurality of drive circuits 90 has an operational amplifier 90a, a pair of inputs 90b and 90c, and an output 90d. The input 90b receives a first electromotive force V B The input 90b is a terminal for receiving the second electromotive force V. The input 90b and the inverting input of the operational amplifier 90a are electrically connected via a resistor R1. The inverting input of the operational amplifier 90a is connected to the output of the operational amplifier 90a via a resistor R2. The input 90c is a terminal for receiving the second electromotive force V. A The input 90c is a terminal for receiving the voltage V applied to the piezoelectric element 52. The input 90c and the non-inverting input of the operational amplifier 90a are electrically connected via a resistor R1. The non-inverting input of the operational amplifier 90a is connected to ground via a resistor R2. The output of the operational amplifier 90a is connected to the output 90d. p is output from the output 90d. The resistance values ​​of the resistors R1 and R2 are p This is predetermined so that the temperature difference between the heat transfer medium in the first recovery pipe 70x and the heat transfer medium in the second recovery pipe 70y is reduced or eliminated.

[0055] Reference will now be made to FIG. 12. (a) and (b) of FIG. 12 are end views each schematically illustrating the configuration of a piezoelectric element according to another exemplary embodiment. The piezoelectric element 52A shown in FIG. 12 is an example of a piezoelectric element different from the piezoelectric element 52. The plasma processing apparatus 1, 1A may employ the piezoelectric element 52A instead of the multiple piezoelectric elements 52. The piezoelectric element 52A is arranged around the opening of the corresponding second nozzle 51y.

[0056] The piezoelectric element 52A includes a plurality of piezoelectric bodies 52a and a plurality of electrodes 52b. The plurality of piezoelectric bodies 52a and the plurality of electrodes 52b are alternately arranged along the circumferential direction around the opening of the corresponding second nozzle 51y. The plurality of electrodes 52b includes a plurality of anodes 52m and a plurality of cathodes 52n. The plurality of anodes 52m and the plurality of cathodes 52n are alternately arranged along the circumferential direction.

[0057] FIG. 12(a) shows the piezoelectric element 52A when no voltage is applied thereto. The diameter of the opening of the second nozzle 51y when no voltage is applied thereto is D1. FIG. 12(b) shows the piezoelectric element 52A when a voltage is applied thereto. The diameter of the opening of the second nozzle 51y when a voltage is applied thereto is D2. As shown in FIGS. 12(a) and 12(b), the inner diameter D2 of the piezoelectric element 52A when a voltage is applied thereto is smaller than D1. Therefore, the flow rate of the heat transfer medium supplied from the second supply pipe 50y to the corresponding second recess 12y increases.

[0058] Reference will now be made to FIG. 13. (a) and (b) of FIG. 13 are end views each schematically illustrating the configuration of a piezoelectric element according to yet another exemplary embodiment. The piezoelectric element 52B shown in FIG. 13 is yet another example of a piezoelectric element different from the piezoelectric elements 52 and 52A. The plasma processing apparatus 1 and 1A may employ the piezoelectric element 52B instead of the piezoelectric elements 52 and 52A. The piezoelectric element 52B is disposed around the opening of the corresponding second nozzle 51y.

[0059] The piezoelectric element 52B includes a plurality of piezoelectric bodies 52a, a plurality of electrodes 52b, and a pair of members 52c. The pair of members 52c are arranged relative to each other so that the opening of the second nozzle 51y is located between them. The plurality of piezoelectric bodies 52a and the plurality of electrodes 52b are alternately arranged between the pair of members 52c and on both sides of the opening of the second nozzle 51y, and together with the pair of members 52c, surround the opening of the second nozzle 51y. The plurality of electrodes 52b include a plurality of anodes 52m and a plurality of cathodes 52n. The plurality of anodes 52m and the plurality of cathodes 52n are alternately arranged.

[0060] FIG. 12(a) shows the piezoelectric element 52B when no voltage is applied thereto. When no voltage is applied to the piezoelectric element 52B, the width of the opening of the second nozzle 51y in the direction in which the pair of members 52c are arranged is D1. FIG. 12(b) shows the piezoelectric element 52B when a voltage is applied thereto. When a voltage is applied to the piezoelectric element 52B, the width of the opening of the second nozzle 51y in the direction in which the pair of members 52c are arranged is D2, which is smaller than D1. Therefore, when a voltage is applied to the piezoelectric element 52B, the flow rate of the heat transfer medium supplied from the second supply pipe 50y increases.

[0061] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0062] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E7] below.

[0063] [E1] a processing chamber; a substrate support provided in the processing chamber, the substrate support including an upper surface for supporting a substrate placed thereon and a lower surface opposite to the upper surface, the substrate support providing a first recess and a second recess opening downward; a first supply pipe including a first nozzle opening upward in the first recess and configured to supply a heat transfer medium to the first recess; a second supply pipe including a second nozzle opening upward in the second recess and configured to supply a heat transfer medium to the second recess; a first partition wall that, together with the substrate support base, forms a first space including the first recess; a second partition wall that, together with the substrate support base, forms a second space including the second recess; a first recovery pipe configured to recover the heat transfer medium from the first space; a second recovery pipe configured to recover the heat transfer medium from the second space; a piezoelectric element disposed about the second nozzle opening so as to reduce the cross-sectional area of ​​the second nozzle opening in response to a voltage applied thereto; a first thermoelectric element disposed between the first recovery pipe and the second recovery pipe so as to generate a first electromotive force corresponding to a temperature difference between the heat transfer medium in the first recovery pipe and the heat transfer medium in the second recovery pipe; a drive circuit configured to apply a voltage corresponding to the magnitude of the first electromotive force to the piezoelectric element; A substrate processing apparatus comprising:

[0064] In the embodiment of [E1], a voltage corresponding to the temperature difference between the heat transfer medium in the first recovery pipe and the heat transfer medium in the second recovery pipe is applied to the piezoelectric element, and the cross-sectional area of ​​the opening of the second nozzle is reduced in accordance with this temperature difference. When the flow rate of the heat transfer medium supplied to the second recess increases in accordance with the reduction in the cross-sectional area of ​​the opening of the second nozzle, the temperature of the portion of the substrate support table including the second recess decreases. As a result, the temperature difference between the portion of the substrate support table including the first recess and the portion of the substrate support table including the second recess decreases. Therefore, according to the embodiment of [E1], the uniformity of the temperature distribution of the substrate on the substrate support table is improved.

[0065] [E2] a circulation device connected to the first supply pipe, the second supply pipe, the first recovery pipe, and the second recovery pipe, configured to supply a heat transfer medium to the first supply pipe and the second supply pipe, and to recover the heat transfer medium from the first recovery pipe and the second recovery pipe; [E1] The substrate processing apparatus according to the present invention.

[0066] [E3] the substrate processing apparatus further includes a second thermoelectric element disposed between the first supply pipe and the first recovery pipe to generate a second electromotive force corresponding to a temperature difference between the heat transfer medium in the first supply pipe and the heat transfer medium in the first recovery pipe; the drive circuit is configured to apply the voltage corresponding to the difference between the second electromotive force and the first electromotive force to the piezoelectric element. The substrate processing apparatus according to [E1] or [E2].

[0067] [E4] The substrate processing apparatus according to [E3], wherein the drive circuit is a differential amplifier circuit having a pair of inputs for receiving the second electromotive force and the first electromotive force.

[0068] [E5] the substrate support platform has a first zone including at least the first recess and a second zone having a plurality of second recesses including the second recess; the substrate processing apparatus includes a plurality of second supply pipes including the second supply pipe, each of the plurality of second supply pipes including a plurality of second nozzles opening upward in the plurality of second recesses, and configured to supply a heat transfer medium to the plurality of second recesses; the substrate processing apparatus includes a plurality of second partitions including the second partition, each of the plurality of second partitions forming a plurality of second spaces, each of the second spaces including the plurality of second recesses, together with the substrate support table; the substrate processing apparatus includes a plurality of second recovery pipes including the second recovery pipe, each of the plurality of second recovery pipes being configured to recover the heat transfer medium from the plurality of second spaces; the substrate processing apparatus includes a plurality of piezoelectric elements including the piezoelectric element, each of the plurality of piezoelectric elements being arranged around an opening of a corresponding second nozzle among the plurality of second nozzles so as to reduce a cross-sectional area of ​​the opening of the corresponding second nozzle in response to a voltage applied thereto; the drive circuit is configured to apply the voltage corresponding to the difference to the plurality of piezoelectric elements. The substrate processing apparatus according to [E3] or [E4].

[0069] [E6] The piezoelectric element includes a ring-shaped piezoelectric body arranged around the opening, and a pair of electrodes provided along the inner and outer peripheries of the piezoelectric body. The substrate processing apparatus according to any one of [E1] to [E5].

[0070] [E7] the piezoelectric element includes a plurality of piezoelectric bodies arranged in a circumferential direction around the opening, and a plurality of electrodes arranged alternately with the plurality of piezoelectric bodies; the plurality of electrodes includes a plurality of anodes and a plurality of cathodes alternately arranged along the circumferential direction; The substrate processing apparatus according to any one of [E1] to [E5].

[0071] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0072] 1, 1A...plasma processing apparatus, 10...processing chamber, 12...substrate support, 12c...upper surface, 12d...lower surface, 12x...first recess, 12y...second recess, 12zx...first zone, 12zy...second zone, 16x...first space, 16y...second space, 50x...first supply pipe, 50y...second supply pipe, 51x...first nozzle, 51y...second nozzle, 90...drive circuit, 52...piezoelectric element, 60x...first partition, 60y...second partition, 70x...first recovery pipe, 70y...second recovery pipe, 80x...first thermoelectric element, 80y...second thermoelectric element, 90...drive circuit.

Claims

1. a processing chamber; a substrate support provided in the processing chamber, the substrate support including an upper surface for supporting a substrate placed thereon and a lower surface opposite to the upper surface, the substrate support providing first and second recesses opening downward; a first supply pipe including a first nozzle opening upward in the first recess and configured to supply a heat transfer medium to the first recess; a second supply pipe including a second nozzle opening upward in the second recess and configured to supply a heat transfer medium to the second recess; a first partition wall that, together with the substrate support table, forms a first space including the first recess; a second partition wall that, together with the substrate support table, forms a second space including the second recess; a first recovery pipe configured to recover the heat transfer medium from the first space; a second recovery pipe configured to recover the heat transfer medium from the second space; a piezoelectric element disposed about the second nozzle opening so as to reduce the cross-sectional area of ​​the second nozzle opening in response to a voltage applied thereto; a first thermoelectric element disposed between the first recovery pipe and the second recovery pipe so as to generate a first electromotive force corresponding to a temperature difference between the heat transfer medium in the first recovery pipe and the heat transfer medium in the second recovery pipe; a drive circuit configured to apply a voltage corresponding to the magnitude of the first electromotive force to the piezoelectric element; A substrate processing apparatus comprising:

2. 2. The substrate processing apparatus of claim 1, further comprising: a circulation device connected to the first supply pipe, the second supply pipe, the first return pipe, and the second return pipe, configured to supply a heat transfer medium to the first supply pipe and the second supply pipe, and to return the heat transfer medium from the first return pipe and the second return pipe.

3. the substrate processing apparatus further includes a second thermoelectric element disposed between the first supply pipe and the first recovery pipe to generate a second electromotive force corresponding to a temperature difference between the heat transfer medium in the first supply pipe and the heat transfer medium in the first recovery pipe; the drive circuit is configured to apply the voltage corresponding to the difference between the second electromotive force and the first electromotive force to the piezoelectric element. The substrate processing apparatus according to claim 1 or 2.

4. 4. The substrate processing apparatus according to claim 3, wherein the drive circuit is a differential amplifier circuit having a pair of inputs for receiving the second electromotive force and the first electromotive force.

5. the substrate support table has a first zone including at least the first recess and a second zone having a plurality of second recesses including the second recess; the substrate processing apparatus includes a plurality of second supply pipes including the second supply pipe, each of the plurality of second supply pipes including a plurality of second nozzles opening upward in the plurality of second recesses, and configured to supply a heat transfer medium to the plurality of second recesses; the substrate processing apparatus includes a plurality of second partitions including the second partition, each of the second partitions forming a plurality of second spaces, each of the second spaces including the plurality of second recesses, together with the substrate support table; the substrate processing apparatus includes a plurality of second recovery pipes including the second recovery pipe, each of the plurality of second recovery pipes being configured to recover the heat transfer medium from the plurality of second spaces; the substrate processing apparatus includes a plurality of piezoelectric elements including the piezoelectric element, each of the plurality of piezoelectric elements being arranged around an opening of a corresponding second nozzle among the plurality of second nozzles so as to reduce a cross-sectional area of ​​the opening of the corresponding second nozzle in response to a voltage applied thereto; the drive circuit is configured to apply the voltage corresponding to the difference to the plurality of piezoelectric elements. The substrate processing apparatus according to claim 3 .

6. The piezoelectric element includes a ring-shaped piezoelectric body arranged around the opening, and a pair of electrodes provided along the inner and outer peripheries of the piezoelectric body. The substrate processing apparatus according to claim 1 or 2.

7. the piezoelectric element includes a plurality of piezoelectric bodies arranged in a circumferential direction around the opening, and a plurality of electrodes arranged alternately with the plurality of piezoelectric bodies; the plurality of electrodes includes a plurality of anodes and a plurality of cathodes alternately arranged along the circumferential direction; The substrate processing apparatus according to claim 1 or 2.

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