Pedestal for substrate processing chamber

Abstract

To provide an improved pedestal for a substrate processing chamber, components thereof, and a substrate processing chamber employing the same.SOLUTION: A pedestal 338 for use in a substrate processing chamber includes a body 370 for disposing a substrate 136 in the substrate processing chamber. The body includes: a support surface 338a; and a stepped surface 338b that protrudes upward from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring 339 such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode 344 disposed in the body, and one or more heaters 398 disposed in the body.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] Aspects of the present disclosure generally relate to a pedestal, components thereof, and methods of using the same in a substrate processing chamber. [Background technology]

[0002] Pedestals are used in substrate processing chambers for processing substrates used in semiconductor applications. Processing methods such as plasma-enhanced chemical vapor deposition (PECVD) can be used in such substrate processing chambers. However, many pedestal designs suffer from arcing or capacitive discharges between the substrate and other components in the substrate processing chamber during substrate processing. For example, arcing can occur between the substrate and an edge ring positioned adjacent to the substrate. Arcing can cause several operational problems, such as reduced film deposition on the substrate, loss of film deposition near the edge of the substrate (resulting in non-uniform film deposition profiles), chipping of the edge ring, or fusing of the edge ring to the substrate. Attempts to resolve these issues have resulted in problems such as reduced throughput, reduced die efficiency per substrate, insufficient film deposition, or high operational costs.

[0003] Therefore, there is a need for an improved pedestal for a substrate processing chamber. Summary of the Invention

[0004] TECHNICAL FIELD Implementations of the present disclosure generally relate to pedestals for substrate processing chambers.

[0005] In one implementation, a pedestal for placement in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface projecting upward from the support surface. The stepped surface is disposed about and surrounds the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form a monolithic body. The pedestal also includes an electrode disposed within the body and one or more heaters disposed within the body.

[0006] In one implementation, a pedestal for placement in a substrate processing chamber includes a body having a support surface. The pedestal includes a first electrode disposed within the body at a first depth below the support surface. The pedestal includes a coating coated on at least a portion of the first electrode. The coating has a volume electrical resistivity greater than the volume electrical resistivity of the first electrode.

[0007] In one implementation, a substrate processing chamber includes a chamber body having an interior volume and a pedestal disposed within the interior volume. The pedestal includes a support surface. The substrate processing chamber also includes an edge ring. The edge ring includes an inner surface, an outer surface, an upper surface, and a beveled angle at an upper end of the inner surface. The beveled angle extends between the inner surface and the upper surface.

[0008] So that the above-described features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, will be had by reference to implementations, some of which are illustrated in the accompanying drawings. It should be noted, however, that the present disclosure may admit of other equally effective implementations, and therefore, the accompanying drawings merely illustrate typical implementations of the present disclosure and should not be considered as limiting the scope of the present invention. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view of a chamber with a pedestal as disclosed herein, according to one implementation. [Figure 2] 2 is a schematic partial cross-sectional view of a portion of a pedestal that can be used in the chamber of FIG. 1, according to one implementation. [Figure 3] 2 is a schematic partial cross-sectional view of a portion of a pedestal that can be used in the chamber of FIG. 1, according to one implementation. DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, wherever possible, the same reference numerals are used to designate identical elements common to the figures. It is contemplated that elements disclosed in one implementation can be beneficially utilized in other implementations without specific recitation.

[0011] An aspect of the present disclosure relates to a pedestal for a substrate processing chamber. FIG. 1 is a schematic cross-sectional view of a chamber 100 including a pedestal 138 as disclosed herein, according to one implementation. The chamber 100 is a substrate processing chamber for, for example, semiconductor manufacturing. The chamber 100 may be a vapor deposition chamber, such as a deposition chamber, such as a chemical vapor deposition (CVD) chamber or a plasma enhanced chemical vapor deposition (PECVD) chamber. The chamber 100 includes a chamber body 102 and a chamber lid 104. The chamber body 102 includes an internal volume 106 and a pumping path 108 therein. The internal volume 106 is a space at least partially defined by the chamber body 102 and the chamber lid 104. The pumping path 108 is a path formed in the chamber body 102 that is coupled to a pumping volume 112 formed in a pumping plate 114. The pumping path 108 facilitates removal of gas from the internal volume 106.

[0012] The chamber 100 includes a gas distribution assembly 116 coupled to or disposed on the chamber lid 104 to deliver a flow of one or more gases into the processing region 110. The gas distribution assembly 116 includes a gas manifold 118 coupled to a gas inlet passage 120 formed in the chamber lid 104. The gas manifold 118 receives a flow of gas from one or more gas sources 122 (two shown). The flow of gas received from the one or more gas sources 122 is distributed throughout a gas box 124, flows through multiple openings in a backing plate 126, and is further distributed throughout a plenum 128 defined by the backing plate 126 and a face plate 130. The flow of gas then flows through multiple openings 132 in the face plate 130 into the processing region 110 of the interior volume 106. A pump 133 is connected to the pumping path 108 by a conduit 134 to control the pressure within the processing region 110 and the pressure on exhaust gases and by-products from the processing region 110 through the pumping volume 112 and the pumping path 108 .

[0013] The interior volume 106 includes a pedestal 138 that supports the substrate 136 within the chamber 100. The pedestal 138 includes a heater 198 and an electrode 140 disposed therein. The electrode 140 may include a conductive mesh, such as a tungsten-, copper-, or molybdenum-containing conductive radio frequency (RF) mesh. The heater 198 may include any material used for heating, including an alternating current (AC) coil. FIG. 1 shows the heater 198 disposed below the electrode 140. However, it is contemplated that the heater 198 may alternatively be disposed above the electrode 140.

[0014] The pedestal 138 is movably positioned within the interior volume 106 by a stem 142 coupled to a lift system. Movement of the pedestal 138 facilitates transfer of the substrate 136 into and out of the processing volume 106 via a slit valve formed through the chamber body 102. The pedestal 138 can also be moved to different positions for processing, inserting, and / or removing the substrate 136. The pedestal 138 also has openings disposed therethrough through which a plurality of lift pins 150 can be movably positioned. In the lowered position, the plurality of lift pins 150 protrude from the pedestal 138 by contacting a lift plate 152 coupled to a bottom 154 of the chamber body. The protrusion of the lift pins 150 positions the substrate 136 in a spaced-apart relationship from the pedestal 138 to facilitate transfer of the substrate 136.

[0015] 1 includes a support surface 138a configured to support a substrate 136 thereon. The support surface 138a and / or the pedestal 138 may be heated. During processing, the substrate 136 is disposed on the support surface 138a. The pedestal 138 also includes an edge ring 139 disposed on the support surface 138a around the substrate 136. During substrate processing, a heater 198 heats the pedestal 138 and the support surface 138a as gas flows into the processing region 110. Also during substrate processing, the electrode 140 delivers radio frequency (RF) energy, alternating current (AC), or direct current (DC) to facilitate the generation of a plasma in the processing region 110 and / or to facilitate chucking of the substrate 136 to the pedestal 138. The heat, gas, and energy from the electrode 140 facilitate the deposition of a film on the substrate 136 during substrate processing.

[0016] In the illustrated implementation, a radio frequency (RF) source 156 is coupled to an electrode 140 disposed within the pedestal 138 via a matching circuit 158. While an RF source 156 is shown, the present disclosure contemplates that other power sources, such as an alternating current (AC) power source or a direct current (DC) power source, may be used. The matching circuit 158 ​​is electrically coupled to the electrode 140 by conductive rods 160. The matching circuit 158 ​​is also electrically coupled to a heater 198. A power source 159 is configured to supply power to the heater 198. The power source 159 may supply AC or DC power to the heater 198 to generate heat. The faceplate 130, which is grounded via coupling to the chamber body 102 and the electrode 140, facilitates the formation of a capacitive plasma coupling. For example, the RF source 156 supplies RF energy to the electrode 140 within the pedestal 138 to facilitate the generation of a capacitively coupled plasma between the pedestal 138 and the faceplate 130 of the gas distribution assembly 116. RF source 156 is connected to ground 171. A second RF source 166 is also configured to supply RF energy to chamber 100. Second RF source 166 is connected to ground 173. Although second RF source 166 is shown, the present disclosure contemplates that other power sources, such as an alternating current (AC) power source or a direct current (DC) power source, may be used.

[0017] When RF power is supplied to the electrode 140, an electric field is created between the faceplate 130 and the pedestal 138, which causes atoms of the gas present in the processing region 110 between the pedestal 138 and the faceplate 130 to ionize and release electrons. The ionized atoms are accelerated toward the pedestal 138, facilitating film formation on the substrate 136. In one example, the processing region 110 is between the faceplate 130 on a first side of the processing region 110 and a support surface 138 a and an edge ring 139 on a second side of the processing region 110.

[0018] FIG. 2 is a schematic, partial cross-sectional view of a portion of a pedestal 238 that can be used in the chamber 100 of FIG. 1 according to one implementation. The pedestal 238 includes a body 270 having a support surface 238a. The pedestal 238 includes an electrode 240 disposed within the body 270 of the pedestal 238. The support surface 238a and / or the pedestal 238 can be heated. The pedestal 238 also includes a heater 298 as disclosed herein. The heater 298 heats the pedestal 238 and / or the support surface 238a. The support surface 238a is configured to support the substrate 136 thereon, for example, during processing of the substrate 136. As discussed above, the electrode 240 can include a conductive mesh for transmitting RF energy. The heater 298 can include any material used for heating, including an alternating current (AC) coil. The heater 298 is disposed below the electrode 240. During processing, the substrate 136 is positioned on the support surface 238a of the pedestal 238. An outer edge 246 of the substrate 136, measured from the center 136 of the substrate, defines a radius R1 of the substrate 136. The pedestal 238 also includes an edge ring 239 disposed on the support surface 238a of the pedestal 238 and around the substrate 136. An inner surface 247 of the edge ring 239 defines an inner radius IR1 of the edge ring 239. In one example, the inner radius IR1 of the edge ring 239 is measured from the center of the edge ring 239. In one embodiment, which can be combined with other embodiments, the center of the support surface 238a is aligned with the center of the substrate 136 during processing of the substrate 136. In one embodiment, which can be combined with other embodiments, the center of the support surface 238a is aligned with the center of the edge ring 239. The edge ring 239 is concentric with the support surface 238a. In one embodiment, which can be combined with other embodiments, the inner radius IR1 is in the range of 5.9 inches to 6.5 inches. In one embodiment, which can be combined with other embodiments, the radius R1 is in the range of 5.9 inches to 6.0 inches.

[0019] The inner radius IR1 of the edge ring 239 and the radius R1 of the substrate 136 define a distance D1 between the inner surface 247 of the edge ring 239 and the outer edge 246 of the substrate 136. The edge ring 239 is spaced from the substrate 136 by a gap. Using a particular distance D1 between the edge ring 239 and the substrate 136 can control the amount of exposure of the support surface 238a between the substrate 136 and the edge ring 239 to the process gas. Controlling the amount of exposed support surface 238a can limit capacitive discharge or arcing that may occur between the substrate 136 and the edge ring 239 during substrate processing. Controlling the amount of exposed support surface 238a also promotes thicker and more uniform film deposition on the substrate 136. In one embodiment, which can be combined with other embodiments, the distance D1 is at least approximately 0.01 inches. In one example, the distance D1 is within a range of approximately 0.02 inches to approximately 1.5 inches. In one example, the distance D1 is in the range of 0.1 inches to 0.7 inches. In one example, the distance D1 is approximately 0.3 inches.

[0020] The distance D1 and the radius R1 of the substrate 136 define a ratio RA of the distance D1 to the radius R1 of the substrate 136. In one embodiment, which can be combined with other embodiments, the ratio RA is in the range of about 0.00167 to about 0.210. In one example, the ratio RA is in the range of about 0.003 to about 0.2. In one example, the ratio RA is about 0.02.

[0021] The edge ring 239 shown in FIG. 2 includes a beveled angle 241 at an upper end of an inner surface 247 of the edge ring 239. The inner surface 247 is disposed radially inward of an outer surface 250 of the edge ring 239 relative to the center of the support surface 238a. The beveled angle 241 extends between the inner surface 247 and an upper surface 255 of the edge ring 239. The upper surface 255 of the edge ring 239 is disposed over a portion of the support surface 238a. The beveled angle 241 is defined at least in part by a sloped profile 241c that extends at an angle A. The angle A is measured between a first axis 241a extending perpendicularly upward from the support surface 238a (e.g., parallel to the central axis of the edge ring 239) and a second axis 241b extending along the sloped profile 241c of the beveled angle 241. The inclusion of the bevel angle can reduce arcing during substrate processing and can reduce film deposition loss near the outer edge 246 of the substrate 136, thereby promoting a thicker, more uniform deposition of the film on the substrate 136. Additionally, using a bevel angle 241 of a particular angle A can reduce arcing and film thickness loss. Utilizing the bevel angle 241 of the edge ring 239 can also increase the die per substrate that can be obtained from a given substrate 136 being processed. In one embodiment, which can be combined with other embodiments, the angle A of the bevel angle 241 is in a range from about 0 degrees to about 90 degrees. In one example, the angle A of the bevel angle 241 is in a range from about 3 degrees to about 65 degrees. In one example, the angle A of the bevel angle 241 is in a range from about 10 degrees to about 60 degrees, e.g., from about 10 degrees to about 30 degrees, from about 30 degrees to about 60 degrees, from about 20 degrees to about 50 degrees, or from about 30 degrees to about 40 degrees. In one example, angle A of oblique angle 241 is approximately 15 degrees, such as in the range of 12 to 18 degrees.

[0022] The electrode 240 shown in the implementation illustrated in FIG. 2 is disposed within the pedestal 238 at a depth MD1 below the support surface 238a. The depth MD1 is measured between the support surface 238a of the pedestal 238 and the upper end 240a of the electrode 240. In one example, if the electrode 240 includes an RF mesh, the upper end 240a is the upper end of the RF mesh. The depth MD1 can be selected to increase the thickness of film deposition during substrate processing while reducing capacitive charging (e.g., arcing). Using a particular depth MD1 of the electrode 240 can also increase the throughput of the substrate processing chamber by limiting plasma coupling to the substrate 136. In one embodiment, which can be combined with other embodiments, the depth MD1 of the electrode 240 is in a range from about 0.5 mm to about 4 mm. In one embodiment, which can be combined with other embodiments, the depth MD1 of the electrode 240 is at least about 1.2 mm.

[0023] In the implementation shown in FIG. 2 , at least a portion of the electrode 240 is coated with a coating 249. Such coating 249 can reduce capacitive discharge between the substrate 136 and the edge ring 239 and can reduce plasma coupling to the substrate 136. As discussed above, the electrode 240 can include an RF mesh. The coating 249 includes an inner radius 249a and an outer radius 249b. In one example, the electrode 240 is coated with the coating 249 to increase the overall volume electrical resistivity of the electrode 240. The electrode 240 is coated between the inner radius 249a and the outer radius 249b. In one example, the inner radius 249a of the coating 249 is approximately equal to the radius R1 of the substrate 136. In one example, the coating 249 is disposed on a radially outer portion of the electrode 240, while a radially inner portion of the electrode 240 is uncoated. The inner radius 249a of the coating 249 can also be greater than the radius R1 of the substrate 136. In one example, the coating 249 has an inner radius 249 a that is smaller than the radius R 1 of the substrate 136 .

[0024] In one example, the outer radius 249b of the coating 249 is approximately equal to the inner radius IR1 of the edge ring 239. In one example, the outer radius 249b of the coating 249 is greater than the inner radius IR1 of the edge ring 239. The outer radius 249b of the coating 249 may also be smaller than the inner radius IR1 of the edge ring 239. In one embodiment, which can be combined with other embodiments, the difference D2 between the outer radius 249b of the coating 249 and the inner radius 249a of the coating 249 may be approximately equal to the distance D1 between the inner surface 247 of the edge ring 239 and the outer edge 246 of the substrate 136. In one example, the difference D2 is in the range of about 40 mm to about 80 mm. In the implementation shown in FIG. 2 , the electrode 240 is coated with the coating 249 on a portion 248 of the electrode 240 that is aligned between the outer edge 246 of the substrate 136 and the inner surface 247 of the edge ring 239. Portion 248 is aligned radially inward of inner surface 247 of edge ring 239 .

[0025] The electrode 240 is coated with a coating 249 on a portion 251 of the electrode 240 that is aligned below the edge ring 239. The portion 251 is aligned radially outward of the inner surface 247 of the edge ring 239. The electrode 240 is also coated with a coating 249 on a portion 261 of the electrode 240 that is aligned outside the radius R1 of the substrate 136. The coating 249 is disposed on the top and bottom of the electrode 240 (as shown in the implementation of FIG. 2 ); however, the coating 249 may alternatively be disposed on either the top or bottom of the electrode 240. The coating 249 may be disposed on the entire electrode 240 or on a specific portion of the electrode 240.

[0026] In one embodiment, which can be combined with other embodiments, the inner radius 249a of the coating 249 is in the range of about 100 mm to about 140 mm. In one embodiment, which can be combined with other embodiments, the outer radius 249b of the coating 249 is in the range of about 140 mm to about 180 mm.

[0027] As discussed in the examples above, coating of electrode 240 can be performed by methods such as skin coating, surface chemical modification, electroplating, etching, oxidation, vacuum-based metal deposition, plastic coating, acid dipping, and / or other methods that increase the volume electrical resistivity of a material. Coating 249 can be made from compositions including, but not limited to, materials such as refractory oxides and high-temperature polymers. In one example, coating 249 has a volume electrical resistivity greater than that of electrode 240. In one example, the volume electrical resistivity of coating 249 is in the range of about 1.005 to about 4.65 times greater than the volume electrical resistivity of electrode 240. The present disclosure contemplates that the thickness of coating 249 can be increased or decreased to increase or decrease, respectively, the overall volume electrical resistivity of electrode 240.

[0028] In one embodiment, which can be combined with other embodiments, the pedestal 238 is made of one or more materials that increase the volume electrical resistivity of the pedestal 238. By increasing the volume electrical resistivity of the pedestal 238, the path from the support surface 238a to ground 171 (shown in FIG. 1) includes a higher volume electrical resistivity, resulting in less arcing between the substrate 136 and the edge ring 239. In one example, the pedestal 238 includes aluminum nitride, and the impurity concentration of the pedestal 238 is varied to vary the volume electrical resistivity of the pedestal 238 by more than 4.0 orders of magnitude. A dopant can be used as the impurity to vary the impurity concentration of the pedestal 238. In one example, the dopant includes magnesium. The pedestal 238 has a volume electrical resistivity in the range of about 1E6 ohm-cm to about 1E12 ohm-cm. In one example, the pedestal 238 has a volume electrical resistivity in the range of about 1E7 ohm-cm to about 1E10 ohm-cm. The pedestal 238 may have a dielectric constant of about 8 to about 10.

[0029] In one embodiment, which can be combined with other embodiments, the edge ring 239 is made of one or more materials that vary the volume electrical resistivity of the edge ring 239 relative to the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 includes a material composition that is different from the material composition of the pedestal 238. Having non-uniform volume electrical resistivity values ​​between the edge ring 239 and the pedestal 238 reduces non-uniformity of the film edge by mitigating non-uniformity of the plasma sheath adjacent the outer edge 246 of the substrate 136. Reducing the plasma density near the outer edge 246 of the substrate 136 can reduce thickness loss of the film deposition near the outer edge 246 of the substrate. Reducing thickness loss of the film deposition near the outer edge 246 of the substrate 136 can result in a thicker, more uniform film deposition on the substrate 136.

[0030] In one embodiment, which can be combined with other embodiments, the edge ring 239 has a volume electrical resistivity that differs from the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 has a volume electrical resistivity that is less than the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 has a volume electrical resistivity that is about half the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 has a volume electrical resistivity that is about 1% (one percent) the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 has a volume electrical resistivity that differs from the volume electrical resistivity of the pedestal 238 by a value that is in the range of about 9.9E7 ohm-cm to about 9.999E11 ohm-cm.

[0031] In one example, the edge ring 239 has a volume electrical resistivity in the range of about 1E6 ohm-cm to about 1E12 ohm-cm.

[0032] In one embodiment, which can be combined with other embodiments, the edge ring 239 has a volume electrical resistivity greater than the volume electrical resistivity of the pedestal 238. In one example, the edge ring 239 has a volume electrical resistivity that is about 10,000 times greater than the volume electrical resistivity of the pedestal 238.

[0033] In one example, the edge ring 239 is bonded to the pedestal 238 to form a unitary body (as discussed with reference to FIG. 3). In one example, the edge ring 239 is bonded to the pedestal 238 using ceramic-to-ceramic bonding.

[0034] 3 is a schematic, partial cross-sectional view of a portion of a pedestal 338 that can be used in the substrate processing chamber 100 of FIG. 1 according to one implementation. The pedestal 338 includes a support surface 338a configured to support a substrate 136 thereon, for example, during processing of the substrate 136. The pedestal 338 and / or the support surface 338a may be heated. The pedestal 338 also includes a stepped surface 338b that protrudes upward from the support surface 338a. The stepped surface 338b is disposed radially outward of and surrounds the support surface 338a. The stepped surface 338b defines an edge ring 339 that is disposed around the substrate 136. In one embodiment, which can be combined with other embodiments, the edge ring 339 is integral with the body of the pedestal 338 (e.g., is a single piece of material). In one embodiment, which can be combined with other embodiments, the edge ring 339 is part of the pedestal 338, whereby the edge ring 339 and the pedestal 338 form a monolithic body 370. In one example, the edge ring 339 and the pedestal 338 form the body 370, such that the edge ring 339 is a first portion of the body 370 and the pedestal 338 is a second portion of the body 370. In one example, the edge ring 339 is bonded to the pedestal 338 to form the body 370. The edge ring 339 can be bonded to the pedestal 338 using ceramic-to-ceramic bonding. In one example, a ceramic block is machined to form the body 370 having the edge ring 339 and the pedestal 338. The body 370 can include a material gradient or impurity gradient such that the edge ring 339 includes a material composition that is different from the material composition of the body 370. A dopant can be used as the impurity to establish the impurity gradient. In one example, the dopant includes magnesium. The body 370 may include a material gradient or impurity gradient such that the edge ring 339 includes a volume electrical resistivity that is different from the volume electrical resistivity of the body 370 .

[0035] By integrating the edge ring 339 with the pedestal 338, or by forming a monolithic body 370 with the pedestal 338 and edge ring 339, the edge ring 339 is less susceptible to damage and installation errors, resulting in lower cost and higher throughput of the chamber 100 during substrate processing operations. Such a configuration also leads to reduced chipping of the edge ring 339, resulting in less arcing between the substrate 136 and the edge ring 339. The potential of the stepped surface 338b is also closer to the potential of the support surface 338a, resulting in less arcing between the substrate 136 and the edge ring 339.

[0036] FIG. 3 illustrates an edge ring 339 (defined by a stepped surface 338b) including an inner surface 347 extending upward from a support surface 338a. A bevel 241 is disposed at the top of the inner surface 347. The bevel 241 extends between the inner surface 347 and the stepped surface 338b. The inner surface 347 defines an inner radius IR2 of the edge ring 339. The substrate 136 shown includes an outer edge 246 defining a radius R1 measured from the center of the substrate 136. The pedestal 338 includes a heater 398, which can be made of any heating material and can be formed, for example, into an AC coil. The heater 398 can heat the pedestal 338 and / or the support surface 338a. A first electrode 345 and a second electrode 344 are disposed within the pedestal 338. The heater 398 is disposed below the first electrode 345 and the second electrode 344.

[0037] The first electrode 345 and the second electrode 344 may include a conductive mesh for propagating RF energy. In the implementation shown in FIG. 3 , the first electrode 345 is disposed within the pedestal 338 at a first depth MD3. The first depth MD3 is measured between the support surface 338a and the top end 345a of the first electrode 345. The second electrode 344 is disposed within the pedestal 338 at a second depth MD2. The second depth MD2 is measured between the support surface 338a and the top end 344a of the second electrode 344.

[0038] In one embodiment that can be combined with other embodiments, the first electrode 345 is disposed at a first depth MD3 that is greater than the second depth MD2 at which the second electrode 344 is disposed. In one example, the first electrode 345 is disposed at a first depth MD3 that is at least approximately 1.5 times greater than the second depth MD2 of the second electrode 344. In one example, the first electrode 345 is disposed at a first depth MD3 that is approximately 1 mm greater than the second depth MD2 of the second electrode 344. In one embodiment that can be combined with other embodiments, the first depth MD3 is approximately equal to the second depth MD2. In one embodiment that can be combined with other embodiments, the first depth MD3 is in the range of approximately 1.25 mm to approximately 7 mm. In one example, the first depth MD3 is in the range of approximately 1.4 mm to approximately 5 mm. In one example, the first depth MD3 is approximately 3 mm. The first electrode 345 is disposed radially outward of the second electrode 344.

[0039] The first electrode 345 includes an inner radius 349a and an outer radius 349b. The first electrode 345 is at least partially coated with a coating 349. Such a coating 349 can reduce capacitive discharge between the substrate 136 and the edge ring 339 and can reduce plasma coupling to the substrate 136. In one example, the coating 349 increases the overall volume electrical resistivity of the first electrode 345. The first electrode 345 is coated with the coating 349 between the inner radius 349a and the outer radius 349b of the first electrode 345. In one example, the inner radius 349a of the first electrode 345 is approximately equal to the radius R1 of the substrate 136. In one example, the inner radius 349a of the first electrode 345 is greater than the radius R1 of the substrate 136. In one example, the inner radius 349a of the first electrode 345 is less than the radius R1 of the substrate 136.

[0040] In one example, the outer radius 349b of the first electrode 345 is greater than the inner radius IR2 of the edge ring 339. In one example, the outer radius 349b of the first electrode 345 is less than the inner radius IR2 of the edge ring 339. In one embodiment, which can be combined with other embodiments, the outer radius 349b of the first electrode 345 is approximately equal to the inner radius IR2 of the edge ring 339.

[0041] Coating 349 includes an inner radius 349c and an outer radius 349d. In one example, inner radius 349c of coating 349 is within a range from about 100 mm to about 140 mm. In one example, outer radius 349d of coating 349 is within a range from about 140 mm to about 180 mm.

[0042] In one example, inner radius 349c of coating 349 is approximately equal to radius R1 of substrate 136. In one example, inner radius 349c of coating 349 is less than radius R1 of substrate 136. In one example, inner radius 349c of coating 349 is greater than radius R1 of substrate 136.

[0043] In one example, the outer radius 349d of the coating 349 is approximately equal to the inner radius IR2 of the edge ring 339. In one example, the outer radius 349d of the coating 349 is greater than the inner radius IR2 of the edge ring 339. In one example, the outer radius 349d of the coating 349 is less than the inner radius IR2 of the edge ring 339.

[0044] In one embodiment, which can be combined with other embodiments, the difference D3 between the outer radius 349d of the coating 349 and the inner radius 349c of the coating 349 is in the range of about 40 mm to about 80 mm. In one embodiment, which can be combined with other embodiments, the coating 349 is disposed on the first electrode 345 between the inner radius 349a and the outer radius 349b.

[0045] In one example, the first electrode 345 is coated with the coating 349 on a portion 351 of the first electrode 345 that is aligned below the edge ring 339. In one example, the first electrode 345 is coated with the coating 349 on a portion 361 of the first electrode 345 that is aligned outside the radius R1 of the substrate 136. The coating 349 can be disposed on the top and bottom of the first electrode 345 (as shown in the implementation of FIG. 3 ), or alternatively, the coating 349 can be disposed on one of the top or bottom of the first electrode 345. In one example, the first electrode 345 is coated with the coating 349 on a portion 348 of the first electrode 345 that is aligned between the edge ring 339 and the substrate 136.

[0046] The second electrode 344 may also be coated with a coating to increase the overall volume electrical resistivity of the second electrode 344 .

[0047] As discussed in the examples above, coating the first electrode 345 and / or the second electrode 344 can be performed by methods such as skin coating, surface chemical modification, electroplating, etching, oxidation, vacuum-based metal deposition, plastic coating, acid dipping, and / or other methods that increase the volume electrical resistivity of a material. In one embodiment, which can be combined with other embodiments, the coating 349 has a volume electrical resistivity greater than the volume electrical resistivity of the first electrode 345. In one example, the volume electrical resistivity of the coating 349 is in the range of about 1.005 to about 4.65 times greater than the volume electrical resistivity of the first electrode 345. The present disclosure contemplates that the thickness of the coating 349 can be increased or decreased to increase or decrease, respectively, the overall volume electrical resistivity of the first electrode 345.

[0048] One or more of the above aspects are illustrated in the following examples.

[0049] Example 1 includes a method of operating a substrate processing chamber. The method includes disposing an edge ring on a pedestal disposed within an interior volume of a chamber body. The method also includes disposing a substrate on a support surface of the pedestal and radially inward of the edge ring. The substrate is positioned a distance from the edge ring.

[0050] Example 2 includes the method of Example 1, where the distance is measured between the outer edge of the substrate and the inner surface of the edge ring.

[0051] Example 3 includes the method of Example 2, wherein the distance is at least 0.01 inches.

[0052] Example 4 includes the method of example 2, wherein the substrate includes a radius measured between an outer edge and a center of the substrate. The method also includes a ratio of the distance to the radius, the ratio being within the range of 0.00167 to 0.210.

[0053] Advantages of the present disclosure include reduced arcing, reduced or limited plasma coupling to the substrate, uniform film deposition, thick film deposition, reduced edge thickness loss, increased throughput, and reduced operational costs. Aspects of the present disclosure include edge rings integrated with a pedestal; edge rings positioned at various distances from the substrate; edge rings with beveled angles; edge rings having a volume electrical resistivity different from that of the pedestal; edge rings made of a material different from that of the pedestal; pedestals having electrodes with coatings disposed thereon; and pedestals having electrodes disposed at various depths therein. It is contemplated that one or more aspects of the various edge ring examples and / or one or more aspects of the various pedestal examples disclosed herein can be combined. Furthermore, it is contemplated that one or more aspects of the various edge ring examples and / or one or more aspects of the various pedestal examples can include some or all of the aforementioned advantages.

[0054] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof. The present disclosure also contemplates that one or more aspects of the embodiments described herein may be substituted for one or more of the other aspects described. For example, one or more aspects of the embodiments described for edge ring 339 may be substituted for or combined with one or more aspects of the embodiments described for edge ring 239 and / or one or more aspects of the embodiments described for edge ring 139. The scope of the present disclosure is determined by the following claims.

Claims

1. 1. A pedestal for placement within a substrate processing chamber, comprising: a body having a support surface and a stepped surface projecting upwardly from the support surface, the stepped surface disposed about and surrounding the support surface, and the stepped surface defining an edge ring such that the edge ring is integral with the pedestal to form a monolithic body; an electrode disposed within the body; and One or more heaters disposed within the body Equipped with the edge ring being a first portion of the body and the pedestal being a second portion of the body; the electrode is coated with a coating having a volume electrical resistivity higher than the volume electrical resistivity of the electrode; and A pedestal wherein a first portion having an edge ring includes an inner surface extending upward from a support surface and a beveled angle at an upper end of the inner surface extending between the inner surface and the stepped surface.

2. 1. A pedestal for placement within a substrate processing chamber, comprising: a body having a support surface; a first electrode disposed within the body at a first depth below the support surface; a coating disposed on at least a portion of the first electrode, the coating having a volume electrical resistivity greater than the volume electrical resistivity of the first electrode; and Edge Ring Equipped with a pedestal, wherein a coating is coated on a portion of the first electrode aligned radially inward of the inner surface of the edge ring, and a coating is coated on a portion of the first electrode aligned radially outward of the inner surface of the edge ring.

3. 3. The pedestal of claim 2, wherein the first depth is in the range of 0.5 mm to 4 mm.

4. 3. The pedestal of claim 2, wherein the first depth is at least 1.2 mm.

5. 3. The pedestal of claim 2, wherein the coating is coated onto at least a portion of the first electrode using one or more of skin coating, surface chemical modification, electroplating, etching, oxidation, vacuum-based metal deposition, plastic coating, and / or acid dipping.

6. The pedestal of claim 2 further comprising a second electrode disposed within the body at a second depth below the support surface, the first depth being greater than the second depth.

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