Semiconductor Devices

Abstract

This semiconductor apparatus comprises a semiconductor element and an electrically conductive bonding material bonding the semiconductor element to a support member. The semiconductor element has first to fourth element side surfaces. The electrically conductive bonding material has first to fourth edges. The distance between the first element side surface and the first edge in a first direction is greater toward the ends of the first element side surface than at the center of the first element side surface in a second direction orthogonal to the first direction. The distance between the second element side surface and the second edge in the first direction is greater toward the ends of the second element side surface than at the center of the second element side surface in the second direction. The distance between the third element side surface and the third edge in the second direction is greater toward the ends of the third element side surface than at the center of the third element side surface in the first direction. The distance between the fourth element side surface and the fourth edge in the second direction is greater toward the ends of the fourth element side surface than at the center of the fourth element side surface in the first direction.

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, and a conductive bonding material. The semiconductor element has a rectangular shape when viewed in the thickness direction of the semiconductor element. The semiconductor element is disposed on the leads. The conductive bonding material electrically connects the leads and the semiconductor element.

[0003] In the semiconductor device described above, for example, when a semiconductor element is bonded to a lead, a conductive bonding material is bonded to the lead and the semiconductor element at a high temperature. This causes the lead and the conductive bonding material to reach a high temperature. When they are subsequently cooled, thermal stress occurs in the conductive bonding material due to the difference in the linear expansion coefficients of the lead and the conductive bonding material. This thermal stress is relatively large near the outer periphery of the semiconductor element when viewed in the thickness direction of the semiconductor element. In particular, thermal stress tends to concentrate on the peripheral portion of the conductive bonding material near the corners of the semiconductor element. If the thermal stress becomes large at the peripheral portion of the conductive bonding material, problems such as cracks occurring in the peripheral portion or peeling of the conductive bonding material from the peripheral portion may occur. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-113359 Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above-mentioned circumstances, one objective of the present disclosure is to provide a semiconductor device that is suitable for suppressing peeling, etc., of a conductive bonding material that electrically bonds a support member on which a semiconductor element is placed to the semiconductor element. [Means for solving the problem]

[0006] A first aspect of the present disclosure provides a semiconductor device comprising a support member, a semiconductor element, and a conductive bonding material. The support member has a main surface facing one side in a thickness direction. The semiconductor element has a main surface and a back surface facing opposite sides in the thickness direction, and a back electrode disposed on the back surface. The conductive bonding material electrically connects the main surface of the support member to the back electrode. The semiconductor element has a first element side surface facing one side in a first direction orthogonal to the thickness direction and a second element side surface facing the other side, a third element side surface facing one side in a second direction orthogonal to the thickness direction and the first direction, and a fourth element side surface facing the other side. The conductive bonding material has, as viewed in the thickness direction, a first edge located on one side of the first element side surface in the first direction and a second edge located on the other side of the second element side surface in the first direction, a third edge located on one side of the third element side surface in the second direction and a fourth edge located on the other side of the fourth element side surface in the second direction. A first distance in the first direction between the first element side surface and the first edge is greater at both ends of the first element side surface than at a center in the second direction. A second distance in the first direction between the second element side surface and the second edge is greater at both ends of the second element side surface than at a center in the second direction. A third distance in the second direction between the third element side surface and the third edge is greater at both ends of the third element side surface than at a center in the first direction. A fourth distance in the second direction between the fourth element side surface and the fourth edge is greater at both ends of the fourth element side surface than at a center in the first direction.

[0007] A second aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: preparing a support member having a main surface facing one side in a thickness direction; disposing a conductive bonding material on the main surface; disposing a semiconductor element having an element main surface and an element back surface facing opposite sides in the thickness direction and a back electrode disposed on the element back surface, the semiconductor element being rectangular in shape as viewed in the thickness direction, on the support member such that the back electrode is on the conductive bonding material; and heating the conductive bonding material to bond the main surface of the support member to the back electrode with the conductive bonding material. The step of disposing the conductive bonding material includes forming extensions in the conductive bonding material that extend outward from positions corresponding to four corners of the semiconductor element as viewed in the thickness direction. [Effects of the Invention]

[0008] According to the above configuration, in the semiconductor device, it is possible to prevent peeling or the like of the conductive bonding material that electrically bonds the semiconductor element to the support member on which the semiconductor element is placed.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] 1 is a perspective view (through a sealing resin) illustrating a semiconductor device according to a first embodiment of the present disclosure. [Figure 3] 1 is a plan view (through a sealing resin) showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 4 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 4 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 4 is a partially enlarged view of FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7. [Figure 9] FIG. 8 is a cross-sectional view taken along line IX-IX in FIG. 7. [Figure 10] FIG. 8 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 8 is a partially enlarged view of FIG. [Figure 12] FIG. 8 is a partially enlarged view of FIG. [Figure 13] FIG. 8 is a partially enlarged view of FIG. [Figure 14] FIG. 8 is a partially enlarged view of FIG. [Figure 15] 3 is a cross-sectional view showing a step of an example of a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 16] FIG. 16 is a cross-sectional view showing a step subsequent to FIG. [Figure 17] FIG. 16 is a plan view of the main part showing a step subsequent to FIG. [Figure 18] FIG. 17 is a cross-sectional view showing a step subsequent to FIG. [Figure 19] FIG. 17 is a plan view of the main part showing a step subsequent to FIG. [Figure 20] 4 is a plan view similar to FIG. 3, showing a semiconductor device according to a first modified example of the first embodiment. FIG. [Figure 21] FIG. 21 is a partially enlarged view of FIG. 20. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0012] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0013] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Additionally, unless otherwise specified, "something A overlaps something B when viewed from a certain direction" includes "something A overlaps the entirety of something B" and "something A overlaps part of something B."

[0014] 1 to 14 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A10 of this embodiment includes a first lead 1, a second lead 2, a third lead 3, a semiconductor element 4, a conductive bonding material 5, a plurality of first conductive members 61, second conductive members 62, and a sealing resin 7.

[0015] FIG. 1 is a perspective view showing the semiconductor device A10. FIG. 2 is a perspective view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line VV in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a partially enlarged view of FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 7. FIG. 10 is a cross-sectional view taken along line XX in FIG. 7. FIGS. 11 to 14 are partially enlarged views of FIG. 7. For ease of understanding, FIGS. 2 and 3 are shown through the sealing resin 7. In FIG. 7, the first conductive member 61 and the second conductive member 62 are omitted.

[0016] In the description of the semiconductor device A10, three mutually orthogonal directions will be referred to as appropriate. In the illustrated example, the thickness direction of the semiconductor element 4 is referred to as the "thickness direction z." Furthermore, the direction orthogonal to the thickness direction z is referred to as the "first direction x," and the direction orthogonal to both the thickness direction z and the first direction x is referred to as the "second direction y."

[0017] The first lead 1, the second lead 2, and the third lead 3 are formed, for example, by punching or bending a metal plate. The first lead 1, the second lead 2, and the third lead 3 are made of a material such as Cu (copper) or Ni (nickel), or an alloy of these.

[0018] The first lead 1 is a member on which a semiconductor element 4 is mounted. As shown in FIGS. 1 to 6, the first lead 1 has an element bonding portion 11, a terminal-shaped extending portion 12, a protruding portion 13, and a connecting portion 14. The element bonding portion 11 has a main surface 11a and a back surface 11b. The main surface 11a faces one side in the thickness direction z, and the back surface 11b faces the other side in the thickness direction z. The semiconductor element 4 is mounted on the main surface 11a. The shape of the element bonding portion 11 is not particularly limited, and in the illustrated example, it is rectangular (or approximately rectangular) when viewed in the thickness direction z. Also, as shown in FIGS. 4 to 6, in this embodiment, the back surface 11b is exposed from the sealing resin 7. The back surface 11b is a portion to be bonded with a bonding material such as solder when the semiconductor device A10 is mounted on a circuit board or the like (not shown). The first lead 1 is an example of a "support member." In this disclosure, a "support member" is also referred to as a "base" or a "substrate."

[0019] 3 to 6, the element bonding portion 11 of this embodiment is formed with a locking portion 151. The locking portion 151 is a portion having a shape that protrudes in the first direction x or the second direction y from the peripheral edge of the element bonding portion 11. The locking portion 151 is provided to increase the holding force of the element bonding portion 11 by the sealing resin 7, for example, by engaging with a part of the sealing resin 7.

[0020] 1 to 3 and 5, the terminal-shaped extending portion 12 is a portion that extends to the other side in the second direction y (the side where the pad portion 21 and pad portion 31 described below are located) relative to the element bonding portion 111. The shape of the terminal-shaped extending portion 12 is not particularly limited, and in the illustrated example, the terminal-shaped extending portion 12 has a base portion 121, a bent portion 122, and a tip portion 123.

[0021] The base portion 121 extends from the element bonding portion 11 to the other side in the second direction y and has a shape that follows the second direction y. The bent portion 122 is connected to the tip of the base portion 121 in the second direction y and is a portion that is bent to one side in the thickness direction z (upper side in FIG. 5 ) when viewed in the first direction x. The tip portion 123 is connected to the bent portion 122 and extends from the bent portion 122 along the second direction y to the other side in the second direction y. In the example shown in the figure, a part of the tip portion 123 protrudes from the sealing resin 7.

[0022] 1 to 3 and 5, the protruding portion 13 is a portion located on one side in the second direction y with respect to the element bonding portion 11. The shape of the protruding portion 13 is not particularly limited, and in the illustrated example, it is an elongated rectangle (or a substantially elongated rectangle) with the first direction x as the longitudinal direction when viewed in the thickness direction z, and most of it is exposed from the sealing resin 7.

[0023] The connecting portion 14 is a portion that connects the element bonding portion 11 and the protruding portion 13. As shown in Fig. 3, the connecting portion 14 in the illustrated example has a through hole 141. The through hole 141 penetrates the connecting portion 14 in the thickness direction z.

[0024] The second lead 2 is a member to which a plurality of first conductive members 61, which will be described later, are bonded. As shown in FIG. 3, the second lead 2 is disposed at a distance from the first lead 1 when viewed in the thickness direction z. As shown in FIGS. 1 to 3 and 6, the second lead 2 of this embodiment has a pad portion 21 and a terminal portion 22. A plurality of first conductive members 61 are bonded to the pad portion 21. The shape of the pad portion 21 is not particularly limited, and in the illustrated example, it is rectangular (or approximately rectangular) when viewed in the thickness direction z. Furthermore, as shown in FIG. 6, in this embodiment, the pad portion 21 is covered with a sealing resin 7.

[0025] 1 to 3 and 6, in this embodiment, the pad portion 21 is located on the other side in the second direction y with respect to the element bonding portion 11 when viewed in the thickness direction z, and is located on one side in the first direction x with respect to the terminal-shaped extending portion 12. In addition, the pad portion 21 is located on one side in the thickness direction z of the element bonding portion 11 (upper side in FIG. 6).

[0026] 1 to 3 and 6, the terminal portion 22 is a portion that extends to the other side in the second direction y relative to the pad portion 211. The terminal portion 22 is used, for example, when mounting the semiconductor device A10 on a circuit board or the like. The shape of the terminal portion 22 is not particularly limited, and in the illustrated example, the terminal portion 22 has a root portion 221, a bent portion 222, and a tip portion 223.

[0027] The root portion 221 extends from the pad portion 21 to the other side in the second direction y and has a shape that follows the second direction y. A part of the root portion 221 is exposed from the sealing resin 7. The bent portion 222 is connected to the tip of the root portion 221 in the second direction y and is a portion that is bent to the other side in the thickness direction z (the lower side in FIG. 6 ) when viewed in the first direction x. The tip portion 223 is connected to the bent portion 222 and extends from the bent portion 222 to the other side in the second direction y along the second direction y.

[0028] The third lead 3 is a member to which a second conductive member 62, which will be described later, is bonded. As shown in FIG. 3, the third lead 3 is disposed spaced apart from the first lead 1 and the second lead 2 when viewed in the thickness direction z. As shown in FIGS. 1 to 4, the third lead 3 of this embodiment has a pad portion 31 and a terminal portion 32. The second conductive member 62 is bonded to the pad portion 31. The shape of the pad portion 31 is not particularly limited, and in the illustrated example, it is rectangular (or approximately rectangular) when viewed in the thickness direction z. As shown in FIG. 4, in this embodiment, the pad portion 31 is covered with a sealing resin 7.

[0029] 1 to 4, the terminal portion 32 is a portion that extends to the other side in the second direction y relative to the pad portion 31. The terminal portion 32 is used, for example, when mounting the semiconductor device A10 on a circuit board or the like. The shape of the terminal portion 32 is not particularly limited, and in the illustrated example, the terminal portion 32 has a root portion 321, a bent portion 322, and a tip portion 323.

[0030] The root portion 321 extends from the pad portion 31 to the other side in the second direction y and has a shape that follows the second direction y. A part of the root portion 321 is exposed from the sealing resin 7. The bent portion 322 is connected to the tip of the root portion 321 in the second direction y and is a portion that is bent to the other side in the thickness direction z (the lower side in FIG. 4) when viewed in the first direction x. The tip portion 323 is connected to the bent portion 322 and extends from the bent portion 322 to the other side in the second direction y along the second direction y.

[0031] The semiconductor element 4 is an electronic component that is the core of the semiconductor device A10's functions and is made of a semiconductor material. Examples of such semiconductor materials include, but are not limited to, Si (silicon), SiC (silicon carbide), and GaAs (gallium arsenide). The semiconductor element 4 is, for example, a power semiconductor chip such as a MOSFET (metal oxide semiconductor field effect transistor). In this embodiment, the semiconductor element 4 is a MOSFET, but is not limited thereto and may be other transistors such as an IGBT (insulated gate bipolar transistor), or diodes such as a Schottky barrier diode or a fast recovery diode.

[0032] As shown in Figures 1 to 10, the semiconductor element 4 of this embodiment has an element main surface 4a, an element back surface 4b, a first element side surface 401, a second element side surface 402, a third element side surface 403, a fourth element side surface 404, a first principal surface electrode 41, a second principal surface electrode 42, and a back surface electrode 43.

[0033] The semiconductor element 4 has a rectangular shape when viewed in the thickness direction z. The element main surface 4a faces one side in the thickness direction z (upper side in Figures 1, 2, and 4). The first lead 1B faces the other side opposite the element main surface 4a in the thickness direction z (lower side in Figures 1, 2, and 4). The element main surface 4a faces the same side as the main surface 11a of the element bonding portion 11 in the thickness direction z. Therefore, the element back surface 4b faces the main surface 11a.

[0034] The first element side surface 401 and the second element side surface 402 are spaced apart from each other in the first direction x. The first element side surface 401 faces one side in the first direction x. The second element side surface 402 faces the other side in the first direction x. The third element side surface 403 and the fourth element side surface 404 are each connected to both the first element side surface 401 and the second element side surface 402. The third element side surface 403 and the fourth element side surface 404 are spaced apart from each other in the second direction y. The third element side surface 403 faces one side in the second direction y. The fourth element side surface 404 faces the other side in the second direction y.

[0035] As shown in FIGS. 1 to 3, the first principal surface electrode 41 and the second principal surface electrode 42 are disposed on the element principal surface 4a. In this embodiment, the first principal surface electrode 41 is a source electrode and is an electrode used as an input / output terminal. The first principal surface electrode 41 covers most of the element principal surface 4a. The second principal surface electrode 42 is a gate electrode and is an electrode through which a gate voltage is applied to the semiconductor element 4 serving as a switching element. In the illustrated example, the second principal surface electrode 42 is smaller than the first principal surface electrode 41. Furthermore, the second principal surface electrode 42 is disposed biased toward the other side of the element principal surface 4a in the first direction x (the left side in FIG. 3).

[0036] 4 to 6 and 8 to 10, the back surface electrode 43 is disposed on the back surface 4b of the element. In this embodiment, the back surface electrode 43 is a drain electrode, and is an electrode used as an input / output terminal together with the first principal surface electrode 41. The back surface electrode 43 covers the entire surface (or substantially the entire surface) of the back surface 4b of the element.

[0037] The back electrode 43 is electrically joined to the main surface 11a (element bonding portion 11, first lead 1) via a conductive bonding material 5. The conductive bonding material 5 electrically connects the main surface 11a (element bonding portion 11) and the back electrode 43. The constituent material of the conductive bonding material 5 contains, for example, Ag (silver). In the semiconductor device A10, the conductive bonding material 5 is baked silver. Note that the conductive bonding material 5 may be made of a baked metal containing a metal other than Ag, a metal paste material, or solder.

[0038] In this embodiment, as shown in FIGS. 3 and 8 to 10, a plating layer 19 is formed on the main surface 11a of the element bonding portion 11 (first lead 1). The plating layer 19 is a metal layer formed by plating on a metal plate such as Cu that constitutes the first lead 1. The plating layer 19 is formed in at least a region that overlaps with the conductive bonding material 5 when viewed in the thickness direction z. In this embodiment, the plating layer 19 covers most of the main surface 11a. The constituent material of the plating layer 19 is not particularly limited, and is, for example, Ag or Ni. Note that the element bonding portion 11 (first lead 1) may be configured such that the plating layer 19 is not formed on the main surface 11a.

[0039] 7 to 10, the conductive bonding material 5 is arranged in a rectangular region overlapping the semiconductor element 4 and surrounding the semiconductor element 4 when viewed in the thickness direction z. As will be described in detail later, the conductive bonding material 5 is arranged near the four corners of the semiconductor element 4 so as to extend further outward from the semiconductor element 4 than other portions when viewed in the thickness direction z.

[0040] 7, the conductive bonding material 5 has a first edge 501, a second edge 502, a third edge 503, and a fourth edge 504. When viewed in the thickness direction z, the first edge 501 is located on one side in the first direction x relative to the first element side surface 401 of the semiconductor element 4. When viewed in the thickness direction z, the second edge 502 is located on the other side in the first direction x relative to the second element side surface 402. When viewed in the thickness direction z, the third edge 503 is located on one side in the second direction y relative to the third element side surface 403, and the fourth edge 504 is located on the other side in the second direction y relative to the fourth element side surface 404.

[0041] In this embodiment, the first edge 501 includes a first edge first portion 501A, a first edge second portion 501B, and a first edge third portion 501C. The first edge first portion 501A extends in the second direction y. The first edge second portion 501B is connected to the first edge first portion 501A and is located outside the first edge first portion 501A in the first direction x and at an end closer to the third edge 503 in the second direction y. The first edge third portion 501C is connected to the first edge first portion 501A and is located outside the first edge first portion 501A in the first direction x and at an end closer to the fourth edge 504 in the second direction y. 7, 11, and 12, the distance (first distance D1) in the first direction x between first element side surface 401 and first edge 501 is greater near both ends than at the center in the second direction y of first element side surface 401. For ease of illustration and description, first edge first portion 501A is depicted as a straight line extending along second direction y, but it may also include a curved portion.

[0042] 7, the second edge 502 includes a second edge first portion 502A, a second edge second portion 502B, and a second edge third portion 502C. The second edge first portion 502A extends in the second direction y. The second edge second portion 502B is connected to the second edge first portion 502A and is located at an end portion thereof on the outer side of the second edge first portion 502A in the first direction x and closer to the third edge 503 in the second direction y. The second edge third portion 502C is connected to the second edge first portion 502A and is located at an end portion thereof on the outer side of the second edge first portion 502A in the first direction x and closer to the fourth edge 504 in the second direction y. 7, 13, and 14, the distance in the first direction x between second element side surface 402 and second edge 502 (second distance D2) is greater near both ends than at the center in the second direction y of second element side surface 402. Note that, for convenience of illustration and description, second edge first portion 502A is depicted as a straight line extending along second direction y, but it may also include a curved portion.

[0043] The third edge 503 includes a third edge first portion 503A, a third edge second portion 503B, and a third edge third portion 503C. The third edge first portion 503A extends in the first direction x. The third edge second portion 503B is connected to the third edge first portion 503A and is located outside the third edge first portion 503A in the second direction y and at an end closer to the first edge 501 in the first direction x. The third edge third portion 503C is connected to the third edge first portion 503A and is located outside the third edge first portion 503A in the second direction y and at an end closer to the second edge 502 in the first direction x. 7, 11 and 13, the distance in the second direction y between third element side surface 403 and third edge 503 (third distance D3) is greater near both ends in the first direction x than at the center of third element side surface 403. For ease of illustration and description, third edge first portion 503A is depicted as a straight line extending along first direction x, but it may also include a curved portion.

[0044] The fourth edge 504 includes a fourth edge first portion 504A, a fourth edge second portion 504B, and a fourth edge third portion 504C. The fourth edge first portion 504A extends in the first direction x. The fourth edge second portion 504B is connected to the fourth edge first portion 504A and is located outward of the fourth edge first portion 504A in the second direction y and at an end closer to the first edge 501 in the first direction x. The fourth edge third portion 504C is connected to the fourth edge first portion 504A and is located outward of the fourth edge first portion 504A in the second direction y and at an end closer to the second edge 502 in the first direction x. 7, 12, and 14, the distance in the second direction y between the fourth element side surface 404 and the fourth edge 504 (fourth distance D4) is greater near both ends of the fourth element side surface 404 in the first direction x than at the center. For ease of illustration and description, the fourth edge first portion 504A is depicted as a straight line extending along the first direction x, but it may also include a curved portion.

[0045] In this embodiment, as shown in FIG. 11 , the first edge second portion 501B has a first edge first inclined portion 501d. When viewed in the thickness direction z, the first edge first inclined portion 501d is connected to the first edge first portion 501A and extends in a third direction v that intersects both the first direction x and the second direction y. The angles between the first direction x and the third direction v and the second direction y and the third direction v are not particularly limited, and in this embodiment, both are 45°. As shown in FIG. 12 , the first edge third portion 501C has a first edge second inclined portion 501e. When viewed in the thickness direction z, the first edge second inclined portion 501e is connected to the first edge first portion 501A and extends in a fourth direction w that intersects both the first direction x and the second direction y. The angle between the first direction x and the fourth direction w and the angle between the second direction y and the fourth direction w are not particularly limited, and in this embodiment, both are 45°. Also, in this embodiment, the angle between the third direction v and the fourth direction w is 90°.

[0046] As shown in Fig. 13, second edge second portion 502B has second edge first inclined portion 502d. When viewed in the thickness direction z, second edge first inclined portion 502d is connected to second edge first portion 502A and extends in the fourth direction w. As shown in Fig. 14, second edge third portion 502C has second edge second inclined portion 502e. When viewed in the thickness direction z, second edge second inclined portion 502e is connected to second edge first portion 502A and extends in the third direction v.

[0047] As shown in Fig. 11, the third edge second portion 503B has a third edge first inclined portion 503d. When viewed in the thickness direction z, the third edge first inclined portion 503d is connected to the third edge first portion 503A and extends in the third direction v. As shown in Fig. 13, the third edge third portion 503C has a third edge second inclined portion 503e. When viewed in the thickness direction z, the third edge second inclined portion 503e is connected to the third edge first portion 503A and extends in the fourth direction w.

[0048] As shown in Fig. 12, the fourth edge second portion 504B has a fourth edge first inclined portion 504d. The fourth edge first inclined portion 504d is connected to the fourth edge first portion 504A when viewed in the thickness direction z and extends in the fourth direction w. As shown in Fig. 14, the third edge third portion 503C has a third edge second inclined portion 503e. The third edge second inclined portion 503e is connected to the third edge first portion 503A when viewed in the thickness direction z and extends in the fourth direction w.

[0049] 7 to 10 , in this embodiment, the conductive bonding material 5 has an overlapping portion 50, a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extending portion 55, a second extending portion 56, a third extending portion 57, and a fourth extending portion 58. The overlapping portion 50 is a portion that overlaps with the entire semiconductor element 4 in the thickness direction z. The first intermediate portion 51, the second intermediate portion 52, the third intermediate portion 53, the fourth intermediate portion 54, the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58 are all located outside the overlapping portion 50 in the thickness direction z, and are each connected to the overlapping portion 50.

[0050] The first intermediate portion 51 is located between the first element side surface 401 and the first edge first portion 501A of the semiconductor element 4 when viewed in the thickness direction z. The second intermediate portion 52 is located between the second element side surface 402 and the second edge first portion 502A when viewed in the thickness direction z. The third intermediate portion 53 is located between the third element side surface 403 and the third edge first portion 503A when viewed in the thickness direction z. The fourth intermediate portion 54 is located between the fourth element side surface 404 and the fourth edge first portion 504A when viewed in the thickness direction z.

[0051] As shown in FIGS. 7 and 11 , the first extending portion 55 extends in the third direction v from a first corner 451, which is the boundary between the first element side surface 401 and the third element side surface 403. The first extending portion 55 includes a first edge first inclined portion 501d and a third edge first inclined portion 503d. As shown in FIGS. 7 and 12 , the second extending portion 56 extends in the fourth direction w from a second corner 452, which is the boundary between the first element side surface 401 and the fourth element side surface 404. The second extending portion 56 includes a first edge second inclined portion 501e and a fourth edge first inclined portion 504d. As shown in FIGS. 7 and 13 , the third extending portion 57 extends in the fourth direction w from a third corner 453, which is the boundary between the second element side surface 402 and the third element side surface 403. The third extending portion 57 includes a second edge first inclined portion 502d and a third edge second inclined portion 503e. As shown in Figures 7 and 14, the fourth extending portion 58 extends in the third direction v from a fourth corner 454 which is the boundary between the second element side surface 402 and the fourth element side surface 404. The fourth extending portion 58 includes a second edge second inclined portion 502e and a fourth edge second inclined portion 504e.

[0052] 7, 11, etc., the boundaries between the first extending portion 55 and the first intermediate portion 51 and the third intermediate portion 53 connected thereto are shown by solid lines, but the boundaries between the first extending portion 55 and the first intermediate portion 51 or the third intermediate portion 53 are not limited to geometrically clear boundaries and may be connected by gently curved surfaces. The boundaries between the second extending portion 56 and the first intermediate portion 51 or the fourth intermediate portion 54, the boundaries between the third extending portion 57 and the second intermediate portion 52 or the third intermediate portion 53, and the boundaries between the fourth extending portion 58 and the second intermediate portion 52 or the fourth intermediate portion 54 are also not limited to geometrically clear boundaries and may be connected by gently curved surfaces.

[0053] The distance from the first corner 451 to the tip of the first extension portion 55 in the third direction v (first extension length L1) shown in FIGS. 7 and 11 is, for example, 0.01 to 1 times the length of the diagonal of the semiconductor element 4 (hereinafter referred to as "diagonal length Ld"). The distance from the second corner 452 to the tip of the second extension portion 56 in the fourth direction w (second extension length L2) shown in FIGS. 7 and 12 is, for example, 0.01 to 1 times the diagonal length Ld. Similarly, the distance from the third corner 453 to the tip of the third extension portion 57 in the fourth direction w (third extension length L3) shown in FIGS. 7 and 13, and the distance from the fourth corner 454 to the tip of the fourth extension portion 58 in the third direction v (fourth extension length L4) shown in FIGS. 7 and 14 are each 0.01 to 1 times the diagonal length Ld. The first extension length L1, the second extension length L2, the third extension length L3, the fourth extension length L4, and the diagonal length Ld are not particularly limited. In this embodiment, the first extension length L1, the second extension length L2, the third extension length L3, and the fourth extension length L4 are each approximately 50 μm to 5,000 μm, and the diagonal length Ld is approximately 50 μm to 15,000 μm. Here, the smaller the size (diagonal length Ld) of the semiconductor element 4, the larger the ratio of each of the first extension length L1, the second extension length L2, the third extension length L3, and the fourth extension length L4 to the diagonal length Ld. The reason for this is as follows: The size (diagonal length Ld) of the semiconductor element 4 can vary greatly depending on the type of the semiconductor element 4, etc. On the other hand, the degree of variation in the first extension length L1, second extension length L2, third extension length L3 and fourth extension length L4 is smaller than the degree of variation in the size of the semiconductor element 4 (diagonal length Ld).

[0054] 8 to 10, the thickness of each of the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58 is greater than the thickness of each of the first intermediate portion 51, the second intermediate portion 52, the third intermediate portion 53, and the fourth intermediate portion 54. In this embodiment, the thickness of each of the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58 is 2 / 3 times or less the thickness of the semiconductor element 4.

[0055] The multiple first conductive members 61 are intended to electrically connect the first principal surface electrodes 41 of the semiconductor element 4 and the second leads 2. The specific configuration of the first conductive members 61 is not particularly limited, and examples thereof include wires and ribbons made of metal. Examples of metals constituting the first conductive members 61 include metals such as Au (gold) and Al (aluminum), and alloys thereof. In this embodiment, the first conductive members 61 are wires made of Al or Al alloys. In this case, the diameter of the first conductive members 61 is larger than the diameter of the second conductive members 62.

[0056] As shown in FIGS. 1 to 3 and 6, the first conductive member 61 has a first bonding portion 611 and a second bonding portion 612. The first bonding portion 611 is bonded to the first main surface electrode 41 of the semiconductor element 4. The second bonding portion 612 is bonded to the pad portion 21 of the second lead 2. Note that, although the present embodiment has exemplified a case in which two first conductive members 61 are provided, a configuration in which one or three or more first conductive members 61 are provided may also be used.

[0057] The second conductive member 62 is for electrically connecting the second principal surface electrode 42 of the semiconductor element 4 and the third lead 3. The specific configuration of the second conductive member 62 is not particularly limited, and examples thereof include a wire or ribbon made of a metal. Examples of metals constituting the second conductive member 62 include metals such as Au and Al, and alloys thereof. In this embodiment, the second conductive member 62 is a wire made of Au.

[0058] 1 to 4, the second conductive member 62 has a first bonding portion 621 and a second bonding portion 622. The first bonding portion 621 is bonded to the second main surface electrode 42 of the semiconductor element 4. The second bonding portion 622 is bonded to the pad portion 31 of the third lead 3.

[0059] The sealing resin 7 covers a portion of each of the first lead 1, the second lead 2, and the third lead 3, the semiconductor element 4, the plurality of first conductive members 61, and the second conductive members 62. The sealing resin 7 is a thermosetting synthetic resin having electrical insulation properties. In this embodiment, the sealing resin 7 is a black epoxy resin, and may contain a filler as appropriate.

[0060] As shown in FIGS. 1 and 4 to 6 , the sealing resin 7 has a resin main surface 71, a resin back surface 72, and resin side surfaces 731 to 734. The resin main surface 71 and the resin back surface 72 face opposite each other in the thickness direction z and are spaced apart. The resin main surface 71 faces the same direction as the element main surface 4a, and the resin back surface 72 faces the same direction as the element back surface 4b. Each of the resin side surfaces 731 to 734 is sandwiched between the resin main surface 71 and the resin back surface 72. The resin side surface 731 faces one side in the first direction x. The resin side surface 732 faces the other side in the first direction x. The resin side surface 733 faces one side in the second direction y. The resin side surface 734 faces the other side in the second direction y. In this embodiment, the back surface 11b of the element bonding portion 11 is exposed from the resin back surface 72. In addition, a protrusion 13 protrudes from the resin side surface 733. Furthermore, the terminal-shaped extensions 12, the terminal portions 22 and the terminal portions 32 protrude from the resin side surface 734.

[0061] Next, a method for manufacturing the semiconductor device A10 will be described below with reference to Figures 15 to 19. Figures 15, 16, and 18 are cross-sectional views showing a step in the method for manufacturing the semiconductor device A10, and are similar to the cross-sectional view shown in Figure 8. Figures 17 and 19 are plan views showing a step in the method for manufacturing the semiconductor device A10, and are similar to the partially enlarged plan view shown in Figure 7.

[0062] First, a first lead 1 is prepared as shown in Fig. 15. Here, a lead frame is prepared that has a shape including the first lead 1, the second lead 2, and the third lead 3 shown in Fig. 15. In this embodiment, a plating layer 19 is formed on the main surface 11a of the first lead 1 (element bonding portion 11).

[0063] Next, as shown in FIGS. 16 and 17, a conductive bonding material 5' is disposed on the main surface 11a of the first lead 1 (element bonding portion 11). The conductive bonding material 5' is disposed on the main surface 11a by, for example, applying a paste-like conductive metal material (e.g., Ag paste) using a dispenser. In the illustrated example, the conductive bonding material 5' disposed on the main surface 11a has a central portion 50' and extending portions 55' to 58'. The central portion 50' corresponds to a central portion of an area where the semiconductor element 4 will be disposed in a later process. In FIG. 17, the position where the semiconductor element 4 will be disposed is indicated by a two-dot chain line. The extending portions 55' to 58' extend outward from positions corresponding to the four corners of the rectangular shape of the semiconductor element 4. In the example shown in FIG. 17, the extending portions 55' and 58' extend linearly along the third direction v and can be formed continuously using a dispenser. The extending portions 56' and 57' extend linearly in the fourth direction w and can be formed continuously by a dispenser. The size and shape of the central portion 50' are not limited to the example shown in the drawings and can be changed as appropriate.

[0064] Next, a semiconductor element 4 is prepared and placed on a conductive bonding material 5'. The semiconductor element 4 has a rectangular shape when viewed in the thickness direction z, and as described above, has an element main surface 4a, an element back surface 4b, a first element side surface 401, a second element side surface 402, a third element side surface 403, a fourth element side surface 404, a first main surface electrode 41, a second main surface electrode 42, and a back surface electrode 43. Here, the back surface electrode 43 is placed on the conductive bonding material 5'. Next, the conductive bonding material 5' is heated (fired) to bond the main surface 11a and the back surface electrode 43 with the conductive bonding material 5, as shown in Figures 18 and 19. When the conductive bonding material 5' is heated (fired), portions of the conductive bonding material 5' that overlap with the semiconductor element 4 in the thickness direction z (parts of the central portion 50' and each of the extension portions 55' to 58') are pressed outward onto the main surface 11a and protrude from the element side surfaces 401 to 404 of the semiconductor element 4 when viewed in the thickness direction z. It is then cooled to form a conductive bonding material 5 having an overlapping portion 50, a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extension portion 55, a second extension portion 56, a third extension portion 57 and a fourth extension portion 58.

[0065] Thereafter, the plurality of first conductive members 61 and the second conductive members 62 are bonded. Next, the sealing resin 7 is formed by molding. Next, the lead frame is appropriately cut to separate the first lead 1, the second lead 2, and the third lead 3 from one another. Through the above steps, the semiconductor device A10 shown in FIGS. 1 to 14 is manufactured.

[0066] Next, the effects of this embodiment will be described.

[0067] The semiconductor device A10 includes a first lead 1, a semiconductor element 4, and a conductive bonding material 5. The conductive bonding material 5 has a first edge 501, a second edge 502, a third edge 503, and a fourth edge 504. The first edge 501 is located on one side of the first element side surface 401 in the first direction x as viewed in the thickness direction z. The second edge 502 is located on the other side of the second element side surface 402 in the first direction x as viewed in the thickness direction z. The third edge 503 is located on one side of the third element side surface 403 in the second direction y as viewed in the thickness direction z. The fourth edge 504 is located on the other side of the fourth element side surface 404 in the second direction y as viewed in the thickness direction z. The distance (first distance D1) between the first element side surface 401 and the first edge 501 in the first direction x is larger near both ends of the first element side surface 401 in the second direction y than near the center of the first element side surface 401. The distance in the first direction x between the second element side surface 402 and the second edge 502 (second distance D2) is greater near both ends of the second element side surface 402 than at the center in the second direction y of the second element side surface 402. The distance in the second direction y between the third element side surface 403 and the third edge 503 (third distance D3) is greater near both ends of the third element side surface 403 than at the center in the first direction x of the third element side surface 403. The distance in the second direction y between the fourth element side surface 404 and the fourth edge 504 (fourth distance D4) is greater near both ends of the fourth element side surface 404 than at the center in the first direction x of the fourth element side surface 404.

[0068] According to this configuration, the conductive bonding material 5 is disposed so as to extend further outward from the semiconductor element 4 near the four corners of the semiconductor element 4 than other portions when viewed in the thickness direction z. This makes it possible to suppress, near the four corners of the semiconductor element 4, thermal stress in the conductive bonding material 5 that may occur during the manufacturing process of the semiconductor device A10 due to the difference in linear expansion coefficient between the first lead 1 and the conductive bonding material 5. Therefore, according to this embodiment, it is possible to suppress peeling or the like of the conductive bonding material 5 that electrically bonds the first lead 1 and the semiconductor element 4.

[0069] The conductive bonding material 5 has a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extending portion 55, a second extending portion 56, a third extending portion 57, and a fourth extending portion 58. The first extending portion 55 extends in the third direction v from a first corner 451 which is the boundary between the first element side surface 401 and the third element side surface 403. The second extending portion 56 extends in the fourth direction w from a second corner 452 which is the boundary between the first element side surface 401 and the fourth element side surface 404. The third extending portion 57 extends in the fourth direction w from a third corner 453 which is the boundary between the second element side surface 402 and the third element side surface 403. The fourth extending portion 58 extends in the third direction v from a fourth corner 454 which is the boundary between the second element side surface 402 and the fourth element side surface 404. Therefore, when viewed in the thickness direction z, the first extending portion 55 and the fourth extending portion 58 extending from one diagonal corner of the semiconductor element 4 extend in the same direction (third direction v). In addition, the second extending portion 56 and the third extending portion 57 extending from the other diagonal corner of the semiconductor element 4 also extend in the same direction (fourth direction w). With this configuration, the conductive bonding material 5 can be easily formed by, for example, applying the material of the conductive bonding material 5 in a fixed direction.

[0070] In the conductive bonding material 5 of this embodiment, as viewed in the thickness direction z, the first extension length L1 of the first extension portion 55 from the corner (first corner 451) of the semiconductor element 4, the second extension length L2 of the second extension portion 56 from the corner (second corner 452) of the semiconductor element 4, the third extension length L3 of the third extension portion 57 from the corner (third corner 453) of the semiconductor element 4, and the fourth extension length L4 of the fourth extension portion 58 from the corner (fourth corner 454) of the semiconductor element 4 are each 0.01 to 1 times the diagonal length Ld of the semiconductor element 4. With this configuration, the peripheral edge of the conductive bonding material 5 is positioned appropriately spaced from the four corners of the semiconductor element 4. Therefore, peeling of the conductive bonding material 5 due to thermal stress can be appropriately suppressed.

[0071] When forming the conductive bonding material 5, if the method of applying it using a dispenser is used, even if the size of the semiconductor element 4 is changed, the first extension portion 55, the second extension portion 56, the third extension portion 57 and the fourth extension portion 58 can be easily formed to have sizes that are appropriately suited to the semiconductor element 4 after the size change.

[0072] In the conductive bonding material 5 of this embodiment, the thickness of each of the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58 is greater than the thickness of any of the first intermediate portion 51, the second intermediate portion 52, the third intermediate portion 53, and the fourth intermediate portion 54. With this configuration, the volumes occupied by the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58 are relatively larger than those of the other portions. This is expected to reduce the influence of thermal stress on the first extending portion 55, the second extending portion 56, the third extending portion 57, and the fourth extending portion 58, which are located near the four corners of the semiconductor element 4.

[0073] The thickness of each of the first extension portion 55, the second extension portion 56, the third extension portion 57, and the fourth extension portion 58 is 2 / 3 or less times the thickness of the semiconductor element 4. With this configuration, the conductive bonding material 5 (the first extension portion 55, the second extension portion 56, the third extension portion 57, or the fourth extension portion 58) is prevented from being unduly electrically connected to the first principal surface electrode 41, etc., arranged on the element principal surface 4a side of the semiconductor element 4.

[0074] A plating layer 19 is formed on the main surface 11a of the element bonding portion 11 (first lead 1) in an area that overlaps at least the conductive bonding material 5 when viewed in the thickness direction z. With this configuration, when the conductive bonding material 5 is formed on the main surface 11a, it is expected that the shape of the conductive bonding material 5 will be stabilized due to, for example, a change in the wettability of the surface on the element bonding portion 11 side.

[0075] Figures 20 and 21 show a semiconductor device according to a modified example of the first embodiment. Figure 20 is a plan view similar to Figure 3 shown in the above embodiment. Figure 21 is a partially enlarged view of Figure 20. In the figures following Figure 20, elements that are the same as or similar to those in the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted where appropriate.

[0076] In the semiconductor device A11 of this modification, the shape of a part of the conductive bonding material 5 is different from that of the semiconductor device A10 of the above embodiment. In this modification, the shape of the conductive bonding material 5 near the four corners of the semiconductor element 4 as viewed in the thickness direction z is different from the configuration shown in FIG.

[0077] 21, in this modification, first edge second portion 501B and first edge third portion 501C are each arc-shaped. Similarly, second edge second portion 502B and second edge third portion 502C, third edge second portion 503B and 503C, and fourth edge second portion 504B and fourth edge third portion 504C are each arc-shaped.

[0078] The conductive bonding material 5 has an extending portion 551, an extending portion 561, an extending portion 571, and an extending portion 581. The extending portion 551 includes a first edge second portion 501B and a third edge second portion 503B, and extends outward from the semiconductor element 4 near a first corner 451 of the semiconductor element 4 in the thickness direction z. The extending portion 561 includes a first edge third portion 501C and a fourth edge second portion 504B, and extends outward from the semiconductor element 4 near a second corner 452 of the semiconductor element 4 in the thickness direction z. The extending portion 571 includes a second edge second portion 502B and a first edge third portion 501C, and extends outward from the semiconductor element 4 near a third corner 453 of the semiconductor element 4 in the thickness direction z. The extending portion 581 includes the second edge third portion 502C and the fourth edge third portion 504C, and protrudes outward from the semiconductor element 4 near the fourth corner portion 454 of the semiconductor element 4 when viewed in the thickness direction z.

[0079] In this modification, the conductive bonding material 5 is also disposed near the four corners of the semiconductor element 4, extending further outward from the semiconductor element 4 than other portions when viewed in the thickness direction z. This makes it possible to suppress, near the four corners of the semiconductor element 4, thermal stress in the conductive bonding material 5 that may occur during the manufacturing process of the semiconductor device A10 due to the difference in linear expansion coefficient between the first lead 1 and the conductive bonding material 5. Therefore, this modification makes it possible to suppress peeling of the conductive bonding material 5 that electrically connects the first lead 1 and the semiconductor element 4. In addition, within the same range of configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment can be achieved.

[0080] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0081] In the above embodiment, the support member on which the semiconductor element 4 is disposed is described as the first lead 1 made of a metal plate, but the configuration of the support member is not particularly limited. For example, a DBC (Direct Bonded Copper) substrate may be used instead of the first lead 1. When a DBC substrate is used, peeling or the like of the conductive bonding material 5 that electrically connects the DBC substrate and the semiconductor element 4 can be suppressed.

[0082] In the above embodiment, the semiconductor devices A10 and A11 each having one semiconductor element 4 have been described, but the present disclosure can be applied to semiconductor devices having a plurality of semiconductor elements. Various methods can be used to form the conductive bonding material 5 instead of the above-described method of applying it using a dispenser. For example, a mask can be used to arrange the conductive bonding material 5 in a predetermined shape on the main surface of the support member.

[0083] The present disclosure includes the embodiments described in the following appendices.

[0084] Appendix 1. a support member having a main surface facing one side in a thickness direction; a semiconductor element having a main surface and a back surface of the element facing opposite directions in the thickness direction, and a back surface electrode disposed on the back surface of the element; a conductive bonding material that electrically connects the main surface of the support member and the back surface electrode, the semiconductor element has a first element side surface facing one side in a first direction orthogonal to the thickness direction and a second element side surface facing the other side, and a third element side surface facing one side in a second direction orthogonal to the thickness direction and the first direction and a fourth element side surface facing the other side, the conductive bonding material has, when viewed in the thickness direction, a first edge located on one side in the first direction with respect to the first element side surface and a second edge located on the other side in the first direction with respect to the second element side surface, a third edge located on one side in the second direction with respect to the third element side surface and a fourth edge located on the other side in the second direction with respect to the fourth element side surface, a first distance in the first direction between the first element side surface and the first edge is larger at both ends of the first element side surface than at a center in the second direction, a second distance in the first direction between the second element side surface and the second edge is larger at both ends of the second element side surface than at a center in the second direction, a third distance in the second direction between the third element side surface and the third edge is larger at both ends of the third element side surface than at a center in the first direction, a fourth distance in the second direction between the fourth element side surface and the fourth edge is greater near both ends of the fourth element side surface than at a center in the first direction of the fourth element side surface; Appendix 2. the first edge includes a first edge first portion extending in the second direction, a first edge second portion connected to the first edge first portion, and located on the outside of the first edge first portion in the first direction and at an end closer to the third edge in the second direction, and a first edge third portion located at an end closer to the fourth edge, the second edge includes a second edge first portion extending in the second direction, and a second edge second portion connected to the second edge first portion, the second edge second portion being located outside the second edge first portion in the first direction and at an end closer to the third edge in the second direction, and a second edge third portion being located at an end closer to the fourth edge, the third edge includes a third edge first portion extending in the first direction, a third edge second portion connected to the third edge first portion, and located outside the third edge first portion in the second direction and at an end closer to the first edge in the second direction, and a third edge third portion located at an end closer to the second edge, The semiconductor device described in Appendix 1, wherein the fourth edge includes a fourth edge first portion extending in the first direction, a fourth edge second portion connected to the fourth edge first portion and located outside the fourth edge first portion in the second direction and at an end closer to the first edge in the second direction, and a fourth edge third portion located at an end closer to the second edge. Appendix 3. the first edge second portion has a first edge first inclined portion that is connected to the first edge first portion when viewed in the thickness direction and extends in a third direction that intersects the first direction and the second direction; the first edge third portion has a first edge second inclined portion that is connected to the first edge first portion when viewed in the thickness direction and extends in a fourth direction that intersects with the first direction and the second direction; the second edge second portion has a second edge first inclined portion that is connected to the second edge first portion and extends in the fourth direction when viewed in the thickness direction, the second edge third portion has a second edge second inclined portion that is connected to the second edge first portion and extends in the third direction when viewed in the thickness direction, the third edge second portion has a third edge first inclined portion that is connected to the third edge first portion and extends in the third direction when viewed in the thickness direction; the third edge third portion has a third edge second inclined portion that is connected to the third edge first portion and extends in the fourth direction when viewed in the thickness direction, the fourth edge second portion has a fourth edge first inclined portion that is connected to the fourth edge first portion and extends in the fourth direction when viewed in the thickness direction, The semiconductor device described in Appendix 2, wherein the fourth edge third portion has a fourth edge second inclined portion that is connected to the fourth edge first portion when viewed in the thickness direction and extends in the third direction. Appendix 4. The conductive bonding material has, as viewed in the thickness direction, a first intermediate portion located between the first element side surface and the first edge first portion, a second intermediate portion located between the second element side surface and the second edge first portion, a third intermediate portion located between the third element side surface and the third edge first portion, and a fourth intermediate portion located between the fourth element side surface and the fourth edge first portion. a first extending portion including the first inclined portion of the first edge and the third inclined portion of the third edge, and extending in the third direction from a first corner portion that is a boundary between the first element side surface and the third element side surface; a second extension portion including the first edge second inclined portion and the fourth edge first inclined portion, and extending in the fourth direction from a second corner portion that is a boundary between the first element side surface and the fourth element side surface; a third extension portion including the second edge first inclined portion and the third edge second inclined portion, and extending in the fourth direction from a third corner portion that is a boundary between the second element side surface and the third element side surface; The semiconductor device described in Appendix 3, having a fourth extension portion that includes the second edge second inclined portion and the fourth edge second inclined portion, and that extends in the third direction from a fourth corner that is the boundary between the second element side surface and the fourth element side surface. Appendix 5. The semiconductor device described in Appendix 4, wherein, when viewed in the thickness direction, a first extension length from the first corner to the tip of the first extension portion in the third direction, a second extension length from the second corner to the tip of the second extension portion in the fourth direction, a third extension length from the third corner to the tip of the third extension portion in the fourth direction, and a fourth extension length from the fourth corner to the tip of the fourth extension portion in the third direction are each 0.01 to 1 times the length of a diagonal line from the first corner to the third corner of the semiconductor element. Appendix 6. The semiconductor device described in Appendix 4 or 5, wherein the thickness of each of the first extension portion, the second extension portion, the third extension portion, and the fourth extension portion is greater than the thickness of any of the first intermediate portion, the second intermediate portion, the third intermediate portion, and the fourth intermediate portion. Appendix 7. 7. The semiconductor device according to claim 6, wherein the thickness of each of the first extension portion, the second extension portion, the third extension portion, and the fourth extension portion is 2 / 3 times or less the thickness of the semiconductor element. Appendix 8. 8. The semiconductor device according to claim 1, wherein the conductive bonding material contains silver. Appendix 9. 9. The semiconductor device according to any one of claims 1 to 8, wherein the conductive bonding material is made of a fired metal. Appendix 10. 10. The semiconductor device according to any one of claims 1 to 9, wherein the support member is a first lead that includes the main surface of the support member and is made of a metal plate. Appendix 11. The semiconductor device described in Appendix 10, wherein the main surface of the first lead includes an area that overlaps with the conductive bonding material when viewed in the thickness direction, and a plating layer is formed in that area. Appendix 12. a second lead made of a metal plate and spaced apart from the first lead in the thickness direction; a first conductive member, the semiconductor element has a first principal surface electrode disposed on the element principal surface, 12. The semiconductor device according to claim 10, wherein the first conductive member is connected to the first principal surface electrode and the second lead. Appendix 13. a third lead made of a metal plate and spaced apart from the first lead and the second lead when viewed in the thickness direction; a second conductive member, the semiconductor element has a second principal surface electrode disposed on the element principal surface, 13. The semiconductor device according to claim 12, wherein the second conductive member is connected to the second principal surface electrode and the third lead. Appendix 14. 14. The semiconductor device according to claim 13, wherein the back surface electrode is a drain electrode, the first principal surface electrode is a source electrode, and the second principal surface electrode is a gate electrode. Appendix 15. providing a support member having a main surface facing one side in a thickness direction; placing a conductive bonding material on the main surface; a step of disposing a semiconductor element having a rectangular shape when viewed in the thickness direction, the semiconductor element having a main surface and a back surface facing opposite to each other in the thickness direction, and a back surface electrode disposed on the back surface of the element, on the support member such that the back surface electrode is on the conductive bonding material; and heating the conductive bonding material to bond the main surface of the support member and the back surface electrode with the conductive bonding material, A method for manufacturing a semiconductor device, wherein the step of arranging the conductive bonding material includes forming extension portions in the conductive bonding material that extend from positions corresponding to each of the four corners of the semiconductor element toward the outside of the semiconductor element when viewed in the thickness direction. [Explanation of symbols]

[0085] A10, A11: Semiconductor device 1: First lead (support member) 11: element bonding portion 11a: main surface 11b: Back side 12: Terminal-shaped extension part 121: Base part 122: Bent part 123:Tip 13:Protrusion 14: Connecting part 141: Through hole 151: Locking portion 19: Plating layer 2: Second lead 21: Pad section 22: Terminal part 221: Base part 222: Bent part 223: Tip part 3: Third lead 31: Pad section 32: Terminal part 321: Base part 322: Bent part 323: Tip part 4: Semiconductor element 4a: Element main surface 4b: Back surface of element 401: Side surface of first element 402: Second element side 403: Third element side 404: Fourth element side surface 41: First principal surface electrode 42: Second principal surface electrode 43: Back surface electrode 43': Third metal layer material 451: First corner 452: Second corner 453: Third corner 454: 4th corner 5,5': Conductive bonding material 50: Polymerization section 50': Center section 501: 1st edge 501A: 1st edge 1st part 501B: 1st edge 2nd part 501C: 1st edge 3rd part 501d: First edge first inclined part 501e: First edge second inclined part 502: Second edge 502A: Second edge first part 502B: Second edge 2nd part 502C: 2nd edge 3rd part 502d: Second edge first inclined part 502e: Second edge second inclined part 503: Third edge 503A: Third edge first part 503B: Third edge 2nd part 503C: 3rd edge 3rd part 503d: Third edge first inclined part 503e: Third edge second inclined part 504: Fourth edge 504A: Fourth edge first part 504B: 4th edge 2nd part 504C: 4th edge 3rd part 504d: Fourth edge first inclined part 504e: Fourth edge second inclined part 51: First intermediate section 52: Second intermediate section 53: 3rd intermediate section 54: 4th intermediate section 55: First extension part 56: Second extension part 57: Third extension part 58: Fourth extension part 61: First conductive member 611: First bonding portion 612: Second bonding portion 62: Second conductive member 621: First bonding part 622: Second bonding part 7: Sealing resin 71: Resin main surface 72: Resin back surface 731, 732, 733, 734: Resin side surface D1: 1st distance D2: 2nd distance D3: Third distance D4: Fourth distance L1: First extension length L2: Second extension length L3: Third extension length L4: Fourth extension length Ld: Diagonal length x: First direction y: Second direction z: Thickness direction v: 3rd direction w: 4th direction

Claims

1. a support member having a main surface facing one side in a thickness direction; a semiconductor element having a main surface and a rear surface of the element facing opposite directions in the thickness direction, and a rear surface electrode disposed on the rear surface of the element; a conductive bonding material that electrically connects the main surface of the support member and the back surface electrode, the semiconductor element has a first element side surface facing one side in a first direction orthogonal to the thickness direction and a second element side surface facing the other side, and a third element side surface facing one side in a second direction orthogonal to the thickness direction and the first direction and a fourth element side surface facing the other side, When viewed in the thickness direction, the conductive bonding material has a first edge located on one side in the first direction with respect to the first element side surface, a second edge located on the other side in the first direction with respect to the second element side surface, a third edge located on one side in the second direction with respect to the third element side surface, and a fourth edge located on the other side in the second direction with respect to the fourth element side surface, a first distance in the first direction between the first element side surface and the first edge is larger at both ends of the first element side surface than at a center in the second direction, a second distance in the first direction between the second element side surface and the second edge is larger at both ends of the second element side surface than at a center in the second direction, a third distance in the second direction between the third element side surface and the third edge is larger at both ends of the third element side surface than at a center in the first direction, a fourth distance in the second direction between the fourth element side surface and the fourth edge is larger at both ends of the fourth element side surface than at a center in the first direction, the first edge includes a first edge first portion extending in the second direction, a first edge second portion connected to the first edge first portion, and located on the outer side of the first edge first portion in the first direction and at an end closer to the third edge in the second direction, and a first edge third portion located at an end closer to the fourth edge, the second edge includes a second edge first portion extending in the second direction, and a second edge second portion connected to the second edge first portion, the second edge second portion being located outside the second edge first portion in the first direction and at an end closer to the third edge in the second direction, and a second edge third portion being located at an end closer to the fourth edge, the third edge includes a third edge first portion extending in the first direction, a third edge second portion connected to the third edge first portion, and located outside the third edge first portion in the second direction and at an end closer to the first edge in the second direction, and a third edge third portion located at an end closer to the second edge, the fourth edge includes a fourth edge first portion extending in the first direction, a fourth edge second portion connected to the fourth edge first portion, and located outside the fourth edge first portion in the second direction and at an end closer to the first edge in the second direction, and a fourth edge third portion located at an end closer to the second edge, the first edge second portion has a first edge first inclined portion that is connected to the first edge first portion when viewed in the thickness direction and extends in a third direction that intersects the first direction and the second direction, the first edge third portion has a first edge second inclined portion that is connected to the first edge first portion when viewed in the thickness direction and extends in a fourth direction that intersects with the first direction and the second direction; the second edge second portion has a second edge first inclined portion that is connected to the second edge first portion and extends in the fourth direction when viewed in the thickness direction; the second edge third portion has a second edge second inclined portion that is connected to the second edge first portion and extends in the third direction when viewed in the thickness direction, the third edge second portion has a third edge first inclined portion that is connected to the third edge first portion and extends in the third direction when viewed in the thickness direction; the third edge third portion has a third edge second inclined portion that is connected to the third edge first portion and extends in the fourth direction when viewed in the thickness direction, the fourth edge second portion has a fourth edge first inclined portion that is connected to the fourth edge first portion and extends in the fourth direction when viewed in the thickness direction, the fourth edge third portion has a fourth edge second inclined portion that is connected to the fourth edge first portion and extends in the third direction when viewed in the thickness direction, The conductive bonding material has, as viewed in the thickness direction, a first intermediate portion located between the first element side surface and the first edge first portion, a second intermediate portion located between the second element side surface and the second edge first portion, a third intermediate portion located between the third element side surface and the third edge first portion, and a fourth intermediate portion located between the fourth element side surface and the fourth edge first portion. a first extending portion including the first inclined portion of the first edge and the third inclined portion of the third edge, and extending in the third direction from a first corner portion that is a boundary between the first element side surface and the third element side surface; a second extending portion including the first edge second inclined portion and the fourth edge first inclined portion, and extending in the fourth direction from a second corner portion that is a boundary between the first element side surface and the fourth element side surface; a third extension portion including the second edge first inclined portion and the third edge second inclined portion, and extending in the fourth direction from a third corner portion that is a boundary between the second element side surface and the third element side surface; a fourth extension portion that includes the second edge second inclined portion and the fourth edge second inclined portion and that extends in the third direction from a fourth corner that is a boundary between the second element side surface and the fourth element side surface, A semiconductor device, wherein the thickness of each of the first extension portion, the second extension portion, the third extension portion, and the fourth extension portion is greater than the thickness of any of the first intermediate portion, the second intermediate portion, the third intermediate portion, and the fourth intermediate portion.

2. The semiconductor device of claim 1, wherein, when viewed in the thickness direction, a first extension length from the first corner to the tip of the first extension portion in the third direction, a second extension length from the second corner to the tip of the second extension portion in the fourth direction, a third extension length from the third corner to the tip of the third extension portion in the fourth direction, and a fourth extension length from the fourth corner to the tip of the fourth extension portion in the third direction are each 0.01 to 1 times the diagonal length from the first corner to the third corner of the semiconductor element.

3. 3. The semiconductor device according to claim 1, wherein the thickness of each of the first extension portion, the second extension portion, the third extension portion, and the fourth extension portion is not more than 2 / 3 times the thickness of the semiconductor element.

4. 4. The semiconductor device according to claim 1, wherein the conductive bonding material contains silver.

5. 5. The semiconductor device according to claim 1, wherein said conductive bonding material is made of a fired metal.

6. 6. The semiconductor device according to claim 1, wherein said support member is a first lead including said main surface of said support member and made of a metal plate.

7. 7. The semiconductor device according to claim 6, wherein the main surface of the first lead includes a region overlapping the conductive bonding material when viewed in the thickness direction, and a plating layer is formed in the region.

8. a second lead made of a metal plate and spaced apart from the first lead in the thickness direction; a first conductive member, the semiconductor element has a first principal surface electrode disposed on the element principal surface; 8. The semiconductor device according to claim 6, wherein the first conductive member is connected to the first principal surface electrode and the second lead.

9. a third lead made of a metal plate and spaced apart from the first lead and the second lead when viewed in the thickness direction; a second conductive member, the semiconductor element has a second principal surface electrode disposed on the element principal surface, The semiconductor device according to claim 8 , wherein the second conductive member is connected to the second principal surface electrode and the third lead.

10. 10. The semiconductor device according to claim 9, wherein said back surface electrode is a drain electrode, said first principal surface electrode is a source electrode, and said second principal surface electrode is a gate electrode.

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