Microelectronic Assembly

Abstract

To provide a micro-electron assembly with which a realizable interconnection density between a package substrate and a die and a realizable signal transfer speed and a realizable downsizing are not restricted.SOLUTION: A microelectronic structure 100 includes a substrate 102 and a bridge component 110 in a cavity 120 on a substrate top face. The substrate includes a dielectric material 112, a conductive material 108 and a conductive contact 114. The conductive material is arranged inside the dielectric material so as to provide a conductive path through the substrate. The substrate includes a dielectric material / conductive material layer. A conductive material line in one layer is electrically joined to a conductive material line inside an adjacent layer by a conductive material via. The cavity extends through a surface insulating material 104 on the top face. The surface insulating material includes other dielectric materials that provide a solder resist and / or a surface electrical insulation and has a tapered shape to become narrower toward the bottom of the cavity.SELECTED DRAWING: Figure 1

Description

[Background technology]

[0001] In conventional microelectronic packages, the die may be attached to an organic package substrate by solder, which may limit, for example, the achievable interconnect density between the package substrate and the die, the achievable signal transfer rate, and the achievable miniaturization. [Brief explanation of the drawings]

[0002]

[0013] Embodiments will be readily understood by reading the following detailed description in conjunction with the accompanying drawings, in which:

[0014] To facilitate this description, like reference numerals refer to like structural elements, and in which embodiments are shown by way of example, and not by way of limitation, and in which:

[0003] [Figure 1] 1 is a cross-sectional side view of an exemplary microelectronic structure in accordance with various embodiments.

[0004] [Figure 2] 2 is a cross-sectional side view of an exemplary microelectronic assembly including the microelectronic structure of FIG. 1 in accordance with various embodiments.

[0005] [Figure 3] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 4] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 5] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 6] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 7]3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 8] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 9] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments. [Figure 10] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2 according to various embodiments.

[0006] [Figure 11] 1 is a cross-sectional side view of an exemplary microelectronic structure in accordance with various embodiments.

[0007] [Figure 12] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly according to various embodiments.

[0008] [Figure 13] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments. [Figure 14] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments.

[0009] [Figure 15] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 16] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 17] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 18]14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 19] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 20] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 21] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 22] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments. [Figure 23] 14A-14C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 13 according to various embodiments.

[0010] [Figure 24] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments. [Figure 25] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments.

[0011] [Figure 26] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 27] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 28] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 29] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 30] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 31] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 32] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments. [Figure 33] 26A-26C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 25 according to various embodiments.

[0012] [Figure 34] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments. [Figure 35] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments.

[0013] [Figure 36] 1A-1C are plan views of grinder marks in solder having ground surfaces, according to various embodiments.

[0014] [Figure 37] 36A-36C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 35 according to various embodiments. [Figure 38] 36A-36C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 35 according to various embodiments. [Figure 39] 36A-36C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 35 according to various embodiments. [Figure 40] 36A-36C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 35 according to various embodiments. [Figure 41]36A-36C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 35 according to various embodiments.

[0015] [Figure 42] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments. [Figure 43] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments. [Figure 44] 1 is a cross-sectional side view of an exemplary microelectronic assembly according to various embodiments.

[0016] [Figure 45] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 46] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 47] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 48] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 49] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 50] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 51] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments. [Figure 52] 45A-45C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 44 according to various embodiments.

[0017] [Figure 53] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly according to various embodiments.

[0018] [Figure 54] FIG. 1 is a plan view of a wafer and die that may be included in a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0019] [Figure 55] FIG. 1 is a cross-sectional side view of an integrated circuit (IC) device that may be included in a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0020] [Figure 56] FIG. 1 is a cross-sectional side view of an IC device assembly that may include a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0021] [Figure 57] FIG. 1 is a block diagram of an exemplary electrical device that may include a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein. DETAILED DESCRIPTION OF THE INVENTION

[0022] Disclosed herein are microelectronic structures including bridges and related assemblies and methods. In some embodiments, the microelectronic structure can include a substrate and a bridge within a cavity in the substrate. Microelectronic components can be bonded to both the substrate and the bridge.

[0023] To achieve high interconnect density in microelectronic packages, some conventional approaches require costly manufacturing operations performed on a panel scale, such as forming fine-pitch vias in substrate layers across buried bridges and plating first-level interconnects. The microelectronic structures and microelectronic assemblies disclosed herein can achieve interconnect densities as high or higher than conventional approaches without the expense of conventional costly manufacturing operations. Furthermore, the microelectronic structures and microelectronic assemblies disclosed herein offer new flexibility to designers and manufacturers of electronic devices, allowing them to select architectures that achieve their device goals without extra cost or manufacturing complexity.

[0024] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the accompanying drawings, where like reference numerals refer to like parts throughout, there are shown by way of illustration embodiments that may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. Therefore, the following detailed description is not to be taken in a limiting sense.

[0025] Various operations may be described sequentially as multiple separate acts or operations in a manner that is most helpful in understanding the claimed subject matter. However, the order of description should not be construed as implying that these operations are necessarily order dependent. In particular, these operations need not be performed in the order presented. The described operations may be performed in a different order than in the described embodiment. Various additional operations may be performed and / or described operations may be omitted in additional embodiments.

[0026] For purposes of this disclosure, the phrase "A and / or B" means (A), (B), or (A and B). For purposes of this disclosure, the phrase "A, B and / or C" means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C). The phrase "A or B" means (A), (B), or (A and B). The drawings are not necessarily to scale. While many of the drawings show rectilinear structures with flat walls and square corners, this is for ease of illustration only; actual devices made using these techniques will exhibit rounded corners, surface roughness, and other features.

[0027] The description uses the phrases "in one embodiment" or "in an embodiment." Each of these phrases may refer to one or more of the same or different embodiments. Furthermore, terms such as "comprising," "including," and "having" when used with respect to embodiments of the present disclosure are synonymous. When used to describe a range of dimensions, the phrase "between X and Y" represents a range that includes X and Y.

[0028] FIG. 1 is a cross-sectional side view of an exemplary microelectronic structure 100. The microelectronic structure 100 may include a substrate 102 and a bridge component 110 within a cavity 120 on the “top” surface of the substrate 102. The substrate 102 may include a dielectric material 112 and a conductive material 108. The conductive material 108 is disposed within the dielectric material 112 (e.g., lines and vias as shown) to provide a conductive path through the substrate 102. In some embodiments, the dielectric material 112 may include an organic material, such as an organic build-up film. In some embodiments, the dielectric material 112 may include, for example, a ceramic, an epoxy film with filler particles therein, a glass, an inorganic material, or a combination of organic and inorganic materials. In some embodiments, the conductive material 108 may include a metal (e.g., copper). In some embodiments, the substrate 102 may include a layer of dielectric material 112 / conductive material 108. Traces of conductive material 108 in one layer are electrically coupled to traces of conductive material 108 in an adjacent layer by vias of conductive material 108. A substrate 102 including such layers may be formed, for example, using printed circuit board (PCB) manufacturing techniques. The substrate 102 may include N such layers, where N is an integer greater than or equal to 1. In the accompanying drawings, these layers are numbered in descending order, starting with the side of the substrate 102 closest to the cavity 120 (e.g., layer N, layer N-1, layer N-2, etc.). While particular numbers and arrangements of layers of dielectric material 112 / conductive material 108 are shown in various of the accompanying drawings, these particular numbers and arrangements are exemplary only, and any desired number and arrangement of dielectric material 112 / conductive material 108 may be used. For example, although Figure 1 and other figures of the accompanying drawings do not show conductive material 108 in layer N-1 below bridge component 110, conductive material 108 may be present in layer N-1 below bridge component 110. Additionally, although a certain number of layers (e.g., five layers) are shown in substrate 102, these layers may represent only a portion of substrate 102, and additional layers may be present (e.g., layers N-5, N-6, etc.).

[0029] As described above, the microelectronic structure 100 may include a cavity 120 in the “top” surface of the substrate 102. In the embodiment of FIG. 1 , the cavity 120 extends through a surface insulating material 104 on the “top” surface, with the bottom of the cavity provided by a “top” dielectric material 112. The surface insulating material 104 may include solder resist and / or other dielectric materials capable of providing surface electrical insulation and may be compatible with solder-based or non-solder-based interconnects, as appropriate. In other embodiments, as described further below, the cavity 120 in the substrate 102 may extend into the dielectric material 112. The cavity 120 may have a tapered shape, as shown in FIG. 1 , narrowing toward the bottom of the cavity 120. The substrate 102 may include a conductive contact 114 on the “top” surface coupled to a conductive path formed by the conductive material 108 through the dielectric material 112. This allows the component to be electrically coupled to the conductive contacts 114 (not shown in FIG. 1 but described below with reference to FIG. 2), to circuitry within the substrate 102, and / or to other components electrically coupled to the substrate 102. The conductive contacts 114 may include a surface finish 116 that may protect materials underlying the conductive contacts from corrosion. In some embodiments, the surface finish 116 may include nickel, palladium, gold, or a combination thereof. The conductive contacts 114 may be located on the "top" surface and exterior of the cavity 120. As shown, the surface insulating material 104 may include an opening at the bottom that exposes the surface finish 116 of the conductive contacts 114. Any of the conductive contacts disclosed herein may include such a surface finish 116, whether or not the surface finish 116 is explicitly shown. In FIG. 1, solder 106 (e.g., a solder ball) may be disposed within the opening and may be in conductive contact with the conductive contacts 114. As shown in FIG. 1 and other figures of the accompanying drawings, these openings in the surface insulating material 104 may be tapered, narrowing towards the conductive contacts 114 .In some embodiments, the solder 106 on the conductive contacts 114 may be a first level interconnect, while in other embodiments, a non-solder first level interconnect may be used to electrically couple the conductive contacts 114 to another component. As used herein, a "conductive contact" may refer to a portion of a conductive material (e.g., one or more metals) that serves as part of an interface between different components, although some of the conductive contacts described herein are shown in particular ways in various of the accompanying drawings, and any conductive contact may be recessed into, flush with, or extend away from a surface of a component, and may take any suitable form (e.g., a conductive pad or socket).

[0030] The bridge component 110 may be disposed within the cavity 120 and may be bonded to the substrate 102. This bond may or may not include an electrical interconnection. In the embodiment of FIG. 1, the bridge component 110 is mechanically bonded to the dielectric material 112 of the substrate 102 by an adhesive 122 (e.g., a die attach film (DAF)) between the “bottom” surface of the bridge component 110 and the substrate 102, although other types of bonds are described elsewhere herein. The bridge component 110 may include conductive contacts 118 on its “top” surface, as described below with reference to FIG. 2, which may be used to electrically couple the bridge component 110 to one or more other microelectronic components. The bridge component 110 may include conductive paths (e.g., including lines and vias, as described below with reference to FIG. 55) to the conductive contacts 118 (and / or to other circuitry included in the bridge component 110 and / or to other conductive contacts of the bridge component 110, as described below). In some embodiments, the bridge component 110 may include a semiconductor material (e.g., silicon); for example, the bridge component 110 may be the die 1502 described below with reference to FIG. 54 or may include an integrated circuit (IC) device 1600 described below with reference to FIG. 55. In some embodiments, the bridge component 110 may be an “active” component in that it may include one or more active devices (e.g., transistors), while in other embodiments, the bridge component 110 may be a “passive” component in that it does not include one or more active devices. The bridge component 110 may be fabricated to allow for greater interconnect density than the substrate 102. Consequently, the pitch 202 of the conductive contacts 118 of the bridge component 110 may be less than the pitch 198 of the conductive contacts 114 of the substrate 102.When multiple microelectronic components are coupled to the bridge component 110 (e.g., as described below with reference to FIG. 2), these microelectronic components may achieve a higher density of interconnections between them using electrical paths through the bridge component 110 (and other circuitry within the bridge component 110, if present) relative to interconnections made via the conductive contacts 114 of the substrate 102.

[0031] The dimensions of the elements of the microelectronic structure 100 may have any suitable values. For example, in some embodiments, the thickness 138 of the metal lines of the conductive contacts 114 may be between 5 and 25 microns. In some embodiments, the thickness 128 of the surface finish 116 may be between 5 and 10 microns (e.g., 7 microns of nickel and less than 100 nanometers each of palladium and gold). In some embodiments, the thickness 142 of the adhesive 122 may be between 2 and 10 microns. In some embodiments, the pitch 202 of the conductive contacts 118 of the bridge component 110 may be less than 70 microns (e.g., between 25 and 70 microns, between 25 and 65 microns, between 40 and 70 microns, or less than 65 microns). In some embodiments, the pitch 198 of the conductive contacts 114 may be greater than 70 microns (e.g., between 90 and 150 microns). In some embodiments, the thickness 126 of the surface insulating material 104 may be between 25 and 50 microns. In some embodiments, the height 124 of the solder 106 above the surface insulating material 104 can be between 25 and 50 microns. In some embodiments, the thickness 140 of the bridge component 110 can be between 30 and 200 microns. In some embodiments, the microelectronic structure 100 can have a footprint that is less than 100 square millimeters (e.g., between 4 and 80 square millimeters).

[0032] The microelectronic structure 100 may be included in a larger microelectronic assembly, similar to that of FIG. 1 and other figures of the accompanying drawings. FIG. 2 shows an example of such a microelectronic assembly 150 that may include one or more microelectronic components 130 having conductive contacts 134 coupled (e.g., by solder 106 or another interconnect structure) to conductive contacts 118 of the bridge component 110 and conductive contacts 132 coupled (e.g., by solder 106 or another interconnect structure as described above) to conductive contacts 114 of the substrate 102. While FIG. 2 shows two microelectronic components 130 (microelectronic components 130-1 and 130-2), the microelectronic assembly 150 may include more or fewer microelectronic components 130. While FIG. 2 shows microelectronic components 130-1 / 130-2 as substantially "covering" adjacent surfaces of the microelectronic structure 100, this is by way of example only and need not be the case. Furthermore, although Figures 1 and 2 (as well as other figures in the accompanying drawings) show the microelectronic structure 100 / microelectronic assembly 150 including a single bridge component 110 within the substrate 102, this is for ease of illustration only, and the microelectronic structure 100 / microelectronic assembly 150 may include multiple bridge components 110 within the substrate 102.

[0033] The microelectronic component 130 may include conductive paths (e.g., including lines and vias, as described below with reference to FIG. 55 ) to the conductive contacts 132 / 134 (and / or to other circuitry included in the microelectronic component 130 and / or to other conductive contacts of the microelectronic component 130, not shown). In some embodiments, the microelectronic component 130 may include a semiconductor material (e.g., silicon); for example, the microelectronic component 130 may be the die 1502 described below with reference to FIG. 54 or may include the IC device 1600 described below with reference to FIG. 55 . In some embodiments, the microelectronic component 130 may be an “active” component in that it may include one or more active devices (e.g., transistors), while in other embodiments, the microelectronic component 130 may be a “passive” component in that it does not include one or more active devices. In some embodiments, for example, the microelectronic component 130 may be a logic die. More generally, the microelectronic component 130 may include circuitry for performing any desired function. For example, one or more of the microelectronic components 130 may be logic dies (e.g., silicon-based dies) and one or more of the microelectronic components 130 may be memory dies (e.g., high-bandwidth memory). As discussed above with reference to Figure 1, when multiple microelectronic components 130 are coupled to a bridge component 110 (e.g., as shown in Figure 2), these microelectronic components 130 may achieve a higher density of interconnections between them using electrical paths through the bridge component 110 (and with other circuitry within the bridge component 110, if present) relative to interconnections made via conductive contacts 114 of the substrate 102.

[0034] As used herein, a "conductive contact" may refer to a portion of a conductive material (e.g., a metal) that serves as an interface between different components. A conductive contact may be recessed into, flush with, or extend away from a surface of a component, and may take any suitable form (e.g., a conductive pad or socket).

[0035] In some embodiments, the molding material 144 may be disposed between the microelectronic structure 100 and the microelectronic component 130, or may be disposed between and above the microelectronic component 130 (not shown). In some embodiments, the molding material 144 may include multiple different types of molding materials, including an underfill material between the microelectronic component 130 and the microelectronic structure 100 and a different material disposed on top and to the side of the microelectronic component 130. Exemplary materials that may be used for the molding material 144 include epoxy materials, as appropriate.

[0036] The microelectronic assembly 150 also includes a surface insulating material 104 on the "bottom" surface (opposite the "top" surface) of the substrate 102. The surface insulating material 104 includes tapered openings with conductive contacts 206 disposed at the bottoms thereof. Solder 106 may be disposed within these openings in conductive contact with the conductive contacts 206. The conductive contacts 206 may also include a surface finish (not shown). In some embodiments, the solder 106 on the conductive contacts 206 may be a second level interconnect (e.g., solder balls for a ball grid array configuration), while in other embodiments, a non-solder second level interconnect (e.g., a pin grid array configuration or a land grid array configuration) may be used to electrically couple the conductive contacts 206 to another component. The conductive contacts 206 / solder 106 (or other second level interconnect) may be used to couple the substrate 102 to another component, such as a circuit board (e.g., a motherboard), an interposer, or another IC package, as known in the art and described below with reference to FIG. 56. In embodiments in which the microelectronic assembly 150 includes multiple microelectronic components 130, the microelectronic assembly 150 may be referred to as a multi-chip package (MCP). The microelectronic assembly 150 may include additional components, such as passive components (e.g., surface-mount resistors, capacitors, and inductors located on the "top" or "bottom" side of the substrate 102), active components, or other components.

[0037] 3 through 10 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic assembly 150 of FIG. 2 according to various embodiments. The operations of the process of FIGS. 3 through 10 (and those of other figures of the accompanying drawings described below) may be illustrated with reference to particular embodiments of the microelectronic structure 100 / microelectronic assembly 150 disclosed herein, but the methods may be used to form any suitable microelectronic structure 100 / microelectronic assembly 150. Although operations are illustrated in FIGS. 3 through 10 (and in other figures representing the fabrication processes disclosed herein) each once and in a particular order, these operations may be reordered and / or repeated as desired (e.g., different operations performed in parallel when fabricating multiple microelectronic structures 100 / microelectronic assemblies 150).

[0038] Figure 3 shows an assembly including a preliminary substrate 102 including a dielectric material 112 and a patterned conductive material 108. The assembly of Figure 3 may be manufactured using conventional package substrate manufacturing techniques (e.g., stacking layers of dielectric material 112, etc.) and may include up to N-1 layers.

[0039] Figure 4 shows the assembly after fabricating an additional Nth layer for the preliminary substrate 102 of Figure 4. The assembly of Figure 4 includes metal underlying the conductive contacts 114. The assembly of Figure 4 can be fabricated using conventional package substrate fabrication techniques.

[0040] FIG. 5 shows the assembly of FIG. 4 after fabricating a layer of surface insulating material 104 on the assembly.

[0041] 6 shows the assembly of FIG. 5 after patterning openings in the surface insulating material 104 to expose the metal underlying the conductive contacts 114, thereby forming a surface finish 116 of the conductive contacts 114 and forming cavities 120. In some embodiments, the openings (including cavities 120) in the surface insulating material 104 can be formed by mechanical patterning techniques, laser patterning techniques, dry etching patterning techniques, or lithographic patterning techniques.

[0042] FIG. 7 shows the assembly of FIG. 6 after a cleaning operation has been performed on the assembly and solder 106 (eg, microballs) has been formed on the conductive contacts 114. As shown in FIG.

[0043] 8 shows the assembly after attaching bridge component 110 to the exposed dielectric material 112 of cavity 120 of the assembly of FIG. 7 using adhesive 122. In some embodiments, adhesive 122 may be DAF, and attaching bridge component 110 may include performing a film curing operation. The assembly of FIG. 8 may take the form of microelectronic structure 100 of FIG. 1.

[0044] 9 shows the assembly of FIG. 8 after attaching microelectronic component 130 to the assembly. In some embodiments, this attachment may include a thermocompression bonding (TCB) operation. In some embodiments, additional solder may be provided on conductive contacts 118, 132, and / or 134 prior to the TCB operation.

[0045] Figure 10 shows the assembly of Figure 9 after applying a molding material 144 to it. As mentioned above, in some embodiments, the molding material 144 of Figure 10 can include multiple different materials (e.g., a capillary underfill material between the microelectronic component 130 and the microelectronic structure 100, and a different material on the microelectronic component 130). The assembly of Figure 10 can take the form of the microelectronic assembly 150 of Figure 2. As mentioned above, the molding material 144 can include an underfill material (e.g., a capillary underfill material).

[0046] Various of Figures 3 through 53 illustrate exemplary microelectronic structures 100 / microelectronic assemblies 150 having various features. These microelectronic structure 100 / microelectronic assembly 150 features may be combined with any other features disclosed herein, as appropriate, to form the microelectronic structure 100 / microelectronic assembly 150. For example, any of the microelectronic structures 100 disclosed herein may be coupled to one or more microelectronic components 130 (e.g., as described above with reference to Figures 2 through 10) to form the microelectronic assembly 150, or any of the microelectronic assemblies 150 disclosed herein may be fabricated separately from the constituent microelectronic structure 100. Many elements of Figures 1 and 2 are shared with Figures 3 through 53. For simplicity of explanation, the description of these elements will not be repeated. These elements may take the form of any of the embodiments disclosed herein.

[0047] The microelectronic structure 100 may include a cavity 120 extending through a surface insulating material 104 on the "top" surface of the substrate 102 (e.g., as described above with reference to FIG. 1). In some embodiments, the dielectric material 112 of the substrate 102 may provide the bottom of the cavity 120 (e.g., as described above with reference to FIG. 1), while in other embodiments, another material may provide the bottom of the cavity 120.

[0048] Although various of the figures herein depict the substrate 102 as a coreless substrate (e.g., with vias that are all tapered in the same direction), any of the substrates 102 disclosed herein may be a cored substrate 102. For example, Figure 11 shows a microelectronic structure 100 having similar features to the microelectronic structure of Figure 1, but with a substrate 102 having a core 178 (through which a conductive pathway, not shown, may extend). As shown in Figure 11, the cored substrate 102 may include vias that taper toward the core 178 (and thus taper in opposite directions on opposite sides of the core 178).

[0049] As noted above, in some embodiments, the bridge component 110 may include conductive contacts other than the conductive contacts 118 on the “top” surface. For example, the bridge component 110 may include conductive contacts 182 on the “bottom” surface shown in many of the accompanying figures. For example, FIG. 12 illustrates an embodiment of the microelectronic structure 100 similar to that of FIG. 1 , but in which the conductive contacts 182 of the bridge component 110 are coupled to the conductive contacts 180 of the substrate 102 by solder 106. In the microelectronic structure 11, the conductive contacts 182 of the bridge component 110 may be conductively coupled (e.g., by solder 106 or another type of interconnect) to the conductive contacts 180 at the bottom of the cavities 120 in the substrate 102. In some embodiments, the conductive contacts 180 may be at the bottom of corresponding cavities in the dielectric material 112, as shown. The conductive contacts 180 may include a surface finish 116 on the exposed surface, as shown. A direct electrical connection between the substrate 102 and the bridge component 110 (i.e., an electrical connection that does not go through the microelectronic component 130) may enable a direct power and / or input / output (I / O) path between the substrate 102 and the bridge component 110, which may provide power delivery and / or low signal latency advantages. In some embodiments, the pitch of the conductive contacts 182 may be between 40 microns and 1 millimeter (e.g., between 40 microns and 50 microns or between 100 microns and 1 millimeter). In embodiments in which the bridge component 110 includes conductive contacts 182 on its “bottom” surface for coupling to conductive contacts 180 on the bottom of the cavity 120 in the substrate 102, a dielectric material (e.g., a capillary underfill material) may support these connections. Such material is not shown in various of the accompanying drawings for clarity of illustration.

[0050] In some embodiments, multiple microelectronic components 130 may be assembled together into a composite. This composite is then bonded to the bridge component 110 and the substrate 102 through a wiring region 171. For example, FIGS. 13 and 14 are side cross-sectional views of an exemplary microelectronic assembly 150 including a wiring region 171, according to various embodiments. In the embodiment of FIG. 13, the bridge component 110 may be disposed in the cavity 120 of the substrate 102, but may not include conductive contacts 182 on the "bottom" side and may or may not contact the dielectric material 112 of the substrate 102. Instead, as shown, an underfill material 147 may mechanically secure the bridge component 110 to the substrate 102. In some embodiments, The underfill material 147 may extend between the bridge component 110 and the dielectric material 112 of the substrate 102, may extend around the sides of the bridge component 110, may extend between the bridge component 110 and the wiring region 171, and / or may extend between the substrate 102 and the wiring region 171. In the embodiment of FIG. 13 , the molding material 145 may be present on the “bottom” surface of the bridge component 110, and the molding material 145 may have the same or a different material composition as the underfill material 147. The molding material 145 may function to provide mechanical support to the bridge component 110 during assembly operations, and any suitable bridge component 110 disclosed herein may include such a molding material. In some embodiments, the molding material 145 may have a thickness between 15 microns and 50 microns.

[0051] 13 may include molding material 144 in contact with the side and "bottom" surfaces of microelectronic component 130, and conductive contacts 133 and 135 coupled to conductive contacts 132 and 134, respectively, by solder 106. Conductive contacts 133 and 135, and solder 106 coupling conductive contacts 133 and 135 to conductive contacts 132 and 134, respectively, may be embedded in molding material 144, as shown. Outside of routing region 171, conductive contact 133 may be coupled to conductive contact 114 of substrate 102 by intervening solder 106, and conductive contact 135 may be coupled to conductive contact 118 of bridge component 110 by intervening solder 106. As shown, solder 106 between conductive contact 114 and conductive contact 133 and solder 106 between conductive contact 118 and conductive contact 135 may be outside of molding material 144 and may be at least partially surrounded by underfill material 147, as shown. In some embodiments, thickness 141 of molding material 144 in wiring region 171 may be between 5 microns and 20 microns (e.g., between 8 microns and 15 microns).

[0052] 13 , the bridge component 110 of FIG. 14 may include conductive contacts 182 on the “bottom” side, which may be coupled to conductive contacts 180 of the substrate 102 by intervening solder 106. One or more of the conductive contacts 182 of the bridge component 110 may be coupled to one or more conductive contacts 118 of the bridge component 110 by conductive paths through the bridge component 110 (e.g., including one or more through-silicon vias (TSVs)), and / or, if present, the conductive contacts 182 of the bridge component 110 may be coupled to electrical elements (e.g., transistors, diodes, resistors, capacitors, inductors, etc.) within the bridge component 110. As shown in FIG. 14 , an underfill material 147 may at least partially surround the solder 106 between the conductive contacts 180 and 182. The microelectronic assembly 150 of Figures 13 and 14 may achieve good planarity of associated features without expensive planarization operations (e.g., without chemical mechanical planarization (CMP)) and may avoid plating tall pillars, which can be difficult to do accurately and inexpensively.

[0053] A microelectronic assembly 150 similar to that shown in Figures 13 and 14 may be manufactured using any suitable technique. For example, Figures 15 through 23 are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly 150 of Figure 13 according to various embodiments.

[0054] 15 shows an assembly including a carrier 131 with printed conductive contacts 133 and 135 and solder 106 on the conductive contacts 133 / 135. In some embodiments, the carrier 131 may be a wafer and may have one or more release layers (not shown) at the interface between the carrier 131 and the material on the carrier 131. In some embodiments, the conductive contacts 133 / 135 may be formed on the carrier 131 by an electroplating operation, and the conductive contacts 133 / 135 may be positioned to position the microelectronic component 130 and the bridge component 110 in a desired location.

[0055] FIG. 16 illustrates the assembly of FIG. 15 after bonding the microelectronic component 130 to the conductive contacts 133 / 135 via solder 106. Specifically, the conductive contact 132 of the microelectronic component 130 may be bonded to the conductive contact 133, and the conductive contact 134 of the microelectronic component 130 may be bonded to the conductive contact 135. In some embodiments, the microelectronic component 130 itself may include solder 106 on the conductive contacts 132 and 134. The conductive contacts 132 and 134 may join with the solder 106 present on the conductive contacts 133 / 135 of the assembly of FIG. 15. Any suitable solder bonding technique may be used to form the assembly of FIG. 16. Because the conductive contacts 133 / 135 are deposited to achieve the desired alignment of the microelectronic component 130, the conductive contacts 132 / 134 of the microelectronic component 130 may self-align with the conductive contacts 133 / 135. Additionally, in embodiments where carrier 131 has a similar coefficient of thermal expansion (CTE) as microelectronic component 130 (e.g., both carrier 131 and microelectronic component 130 are silicon-based), there may be little to no CTE mismatch between microelectronic component 130 and carrier 131 during bonding, which further contributes to good alignment between conductive contacts 132 / 134 and conductive contacts 133 / 135, respectively. Note that microelectronic component 130-1 need not have the same thickness as microelectronic component 130-2.

[0056] FIG. 17 shows the assembly after providing molding material 144 between the microelectronic component 130 and the carrier 131, around the sides of the microelectronic component 130, and possibly over the "top" of the microelectronic component 130 (to form wiring area 171), and then planarizing the molding material 144 to remove excess molding material 144 and achieve a flat "top" surface.

[0057] 18 shows the assembly of FIG. 17 after removing carrier 131 from the assembly, "flipping" the result, and then attaching another carrier 131 to the planarized surface adjacent the "back" side of microelectronic component 130 to expose wiring region 171. While a single reference number "131" is used to refer to multiple of the carriers described herein, this is for ease of explanation only, and different ones of carriers 131 may have different compositions and structures, as desired. In some embodiments, another carrier 131 need not be bonded to the planarized surface before subsequent operations (e.g., if the assembly of FIG. 17 has adequate mechanical stability to withstand further processing without carrier 131).

[0058] Figure 19 shows the assembly of Figure 18 after providing solder 106 on the exposed conductive contacts 133 / 135. In some embodiments, the solder 106 may be provided as solder bumps.

[0059] 20 shows the assembly after bonding bridge component 110 (with molding material 145) to the assembly of FIG. 19 by bonding conductive contacts 118 of bridge component 110 to conductive contacts 135 via intervening solder 106. Because conductive contacts 135 were deposited to achieve the desired alignment of bridge component 110, conductive contacts 118 of bridge component 110 may self-align with conductive contacts 135.

[0060] Figure 21 shows the assembly after removing the carrier 131 of Figure 20 and "flipping" the resulting assembly. In embodiments where multiple of the microelectronic assemblies 150 of Figure 13 are being manufactured simultaneously, these different microelectronic assemblies 150 may be singulated as part of the operation of Figure 21.

[0061] 22 shows the assembly of FIG. 21 after bonding to substrate 102. Specifically, conductive contact 133 may be bonded to conductive contact 114 by intervening solder 106. In some embodiments, this bonding may include a mass reflow operation, and the force between solder 106 and conductive contacts 118 and 135 may be adequate to hold bridge component 110 in place during mass reflow.

[0062] FIG. 23 shows the assembly after providing underfill material 147 between the substrate 102, the bridge component 110, and the wiring region 171. In some embodiments, the spacing between the bridge component 110 and adjacent materials on the substrate 102 can be at least 10 microns to allow the underfill material 147 to reach these spaces. Similarly, in some embodiments, the spacing between the bridge component 110 and the wiring region 171 can be at least 10 microns to allow the underfill material 147 to reach these spaces. The assembly of FIG. 23 can take the form of the microelectronic assembly 150 of FIG. 13. The microelectronic assembly 150 of FIG. 14 can be fabricated using a process similar to that shown in FIGS. 15 through 23, but in which the bonding operation (e.g., mass reflow) described above with reference to FIG. 22 can also include bonding the conductive contacts 182 of the bridge component 110 to the conductive contacts 180 of the substrate 102 with intervening solder 106. Additionally, in some embodiments, an assembly similar to that of FIG. 20 may be fired to cause the solder 106 to form an intermetallic compound (IMC) on the conductive contacts 182 prior to subsequent operations.

[0063] 13 and 14, in some embodiments, multiple microelectronic components 130 may be assembled together into a composite. This composite is then bonded to the bridge component 110 and the substrate 102 through the wiring region 171. In other embodiments, multiple microelectronic components and the bridge component 110 may be assembled together into a composite. This composite is then bonded to the substrate 102 through the wiring region 173. FIGS. 24 and 25 are side cross-sectional views of an exemplary microelectronic assembly 150 including the wiring region 173, according to various embodiments.

[0064] 24 and 25 may include a molding material 144 in contact with the side and "bottom" surfaces of the microelectronic component 130, as well as a dielectric material 149. The dielectric material 149 may include any suitable material, such as solder resist or photoresist. The bridge component 110 need not be disposed in the cavity 120 of the substrate 102 (as described above with reference to FIGS. 13 and 14), but may instead be partially disposed in an opening 193 in the dielectric material 149 of the wiring region 173, and the conductive contacts 118 of the bridge component 110 may be coupled to the conductive contacts 134 of the microelectronic component 130 by solder 106 embedded in the molding material 144. The wiring area 173 may include conductive contacts 151 embedded in the dielectric material 149 and conductively coupled to the conductive contacts 132 of the microelectronic component 130 by solder 106, which may be partially surrounded by the dielectric material 149 and partially surrounded by the molding material 144. As shown in Figures 24 and 25, the "bottom" surface of the conductive contacts 151 may be flush with the "bottom" surface of the dielectric material 149 and the "bottom" surface of the molding material 144 below the bridge component 110. Outside of the wiring area 173, the conductive contacts 151 may be coupled to the conductive contacts 114 of the substrate 102 by intervening solder 106, which may be partially surrounded by the surface insulating material 104 and partially surrounded by the underfill material 147. As shown, the solder 106 between the conductive contacts 114 and 151 may be outside of the molding material 144 and outside of the dielectric material 149 .

[0065] In the embodiment of FIG. 24 , the bridge component 110 may not include conductive contacts 182 on its “bottom” side (e.g., as described above with reference to FIG. 13 ), and molding material 145 may be present on the “bottom” side of the bridge component 110. The embodiment of FIG. 25 has many features in common with the embodiment of FIG. 24 , but the bridge component 110 of FIG. 25 may include conductive contacts 182 on its “bottom” side, and these conductive contacts 182 may be bonded to conductive contacts 153 of the routing region 170 by interstitial solder 106 embedded in the molding material 144 and located in openings 193 in the dielectric material 149. The “bottom” side of the conductive contacts 153 may be coplanar with the “bottom” side of the conductive contacts 151, and the conductive contacts 153 may be bonded to conductive contacts 180 of the substrate 102 by interstitial solder 106. Outside of routing region 173, solder 106 coupling conductive contact 153 to conductive contact 180 may be partially surrounded by surface insulating material 104 and partially surrounded by underfill material 147. As shown, solder 106 between conductive contact 153 and conductive contact 180 may be outside of molding material 144 and outside of dielectric material 149. Similar to microelectronic assembly 150 in Figures 13 and 14, microelectronic assembly 150 in Figures 24 and 25 may achieve good planarity of associated features without expensive planarization operations and may avoid plating tall pillars.

[0066] A microelectronic assembly 150 similar to that shown in Figures 24 and 25 may be manufactured using any suitable technique. For example, Figures 26 through 33 are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly 150 of Figure 25 according to various embodiments.

[0067] 26 shows an assembly including a carrier 131 with printed conductive contacts 151 and 153. In some embodiments, the carrier 131 may be a wafer and may have one or more release layers (not shown) at the interface between the carrier 131 and the material on the carrier 131. In some embodiments, the carrier 131 in the assembly of FIG. 26 may include glass. In some embodiments, the conductive contacts 151 / 153 may be formed on the carrier 131 by an electroplating operation, and the conductive contacts 151 / 153 may be positioned to position the microelectronic component 130 and the bridge component 110 in a desired location.

[0068] 27 shows the assembly of FIG. 26 after dielectric material 149 has been deposited and patterned to form openings 193 around conductive contacts 153 and tapered openings to expose surfaces of conductive contacts 151. In some embodiments, openings 193 may have a taper that opposes the taper of the openings exposing conductive contacts 151 (i.e., the taper of openings 193 may widen toward carrier 131). As noted above, in some embodiments, dielectric material 149 may be a solder resist material or a photoresist material and may be deposited and patterned using any suitable known technique (e.g., layer-by-layer deposition).

[0069] Figure 28 shows the assembly of Figure 27 after providing solder 106 on the exposed surfaces of the conductive contacts 151. In some embodiments, the solder 106 may be provided by depositing solder balls on the exposed surfaces of the conductive contacts 151 and then performing a reflow operation.

[0070] 29 shows the assembly of FIG. 28 after bonding bridge component 110 to the assembly of FIG. 28 by bonding conductive contacts 182 of bridge component 110 to conductive contacts 153 via intervening solder 106. Because conductive contacts 153 are deposited to achieve the desired alignment of bridge component 110, conductive contacts 182 of bridge component 110 may self-align with conductive contacts 153. In some embodiments, the height of bridge component 110 relative to the surface of carrier 131 may be controlled by referencing the top surface of dielectric material 149 and / or the top surfaces of solder 106 on conductive contacts 151.

[0071] FIG. 30 shows the assembly of FIG. 29 after bonding the microelectronic component 130 to the conductive contacts 153 and 118 via solder 106. Specifically, conductive contact 132 of microelectronic component 130 may be bonded to conductive contact 153, and conductive contact 134 of microelectronic component 130 may be bonded to conductive contact 118. In some embodiments, the microelectronic component 130 itself may include solder 106 on the conductive contact 132. The conductive contact 132 may join with the solder 106 present on the conductive contact 153 of the assembly of FIG. 29. Any suitable solder bonding technique may be used to form the assembly of FIG. 30. Because the conductive contacts 151 / 153 are deposited to achieve the desired alignment of the microelectronic component 130 and the bridge component 110, the conductive contacts 132 / 134 of the microelectronic component 130 may self-align to the conductive contacts 151 / 118, respectively. Additionally, in embodiments in which the carrier 131 has a similar CTE to the microelectronic component 130, there may be little to no CTE mismatch between the microelectronic component 130 and the carrier 131 during bonding, which further contributes to good alignment between the conductive contacts 132 / 134 and the conductive contacts 151 / 118, respectively. Although various of the accompanying figures show the solder 106 in contact with only a portion of the exposed surface of the conductive contacts (e.g., only a portion of the exposed surface of the conductive contact 132 in FIG. 30), this is for ease of illustration only, and the solder 106 in contact with the conductive contacts may wet the entire exposed surface of the conductive contact.

[0072] Figure 31 shows the assembly after providing molding material 144 between the microelectronic component 130 and the carrier 131, around the sides of the microelectronic component 130, and possibly over the "top" of the microelectronic component 130 (to form wiring area 173), then planarizing the molding material 144 to remove excess molding material 144 to achieve a flat "top" surface, and removing the carrier 131.

[0073] 32 shows the assembly of FIG. 31 after bonding to substrate 102. Specifically, conductive contact 151 may be bonded to conductive contact 114 by intervening solder 106, and conductive contact 153 may be bonded to conductive contact 180 by intervening solder 106. In some embodiments, this bonding may include a mass reflow operation.

[0074] Figure 33 shows the assembly after providing underfill material 147 between substrate 102 and wiring region 173. In some embodiments, the spacing between substrate 102 and wiring region 173 may be at least 10 microns to allow underfill material 147 to reach this space. The assembly of Figure 33 may take the form of microelectronic assembly 150 of Figure 25. Microelectronic assembly 150 of Figure 24 may be fabricated using a process similar to that shown in Figures 15-23, but in which operations related to conductive contacts 182 / 153 / 180 may be omitted.

[0075] In some embodiments, the distance between the substrate 102, the bridge component 110, and the microelectronic component 130 can be controlled by engineering the solder 106 that couples the conductive contacts 132 to the conductive contacts 114. For example, in some embodiments, the solder 106 that couples the conductive contacts 114 to the conductive contacts 132 can include at least one portion that is processed to form an IMC and be planarized prior to a subsequent solder bonding operation, with the planarized IMC forming a reference surface for attaching the bridge component 110 and the microelectronic component 130. For example, FIGS. 34 and 35 are side cross-sectional views of an exemplary microelectronic assembly 150 that includes such solder portions, according to various embodiments. Specifically, in FIGS. 34 and 35, the solder 106 that couples the conductive contacts 114 to the conductive contacts 132 can include a first portion of solder 106A and a second portion of solder 106A, where the first portion of solder 106A is between the second portion of solder 106B and the conductive contact 114. The first portion of solder 106A may have a top surface at the interface between the first portion of solder 106A and the second portion of solder 106B that has grinder marks resulting from a grinding or polishing operation after the first portion of solder 106A is allowed to form an IMC during manufacturing. FIG. 36 is a plan view of exemplary grinder marks on a mechanically ground surface of solder 106B according to various embodiments. Even after the mechanically ground first portion of solder 106A is bonded to the second portion of solder 106B (e.g., during a reflow operation), the mechanically ground surface of the first portion of solder 106A may remain separate. The particular embodiment shown in FIG. 34 includes a bridge component 110 that does not have a “bottom” conductive contact 182, and the “bottom” surface of bridge component 110 may be bonded to substrate 102 with adhesive 122. The particular embodiment shown in FIG. 34 includes a bridge component 110 having a "bottom" conductive contact 182 coupled to a conductive contact 180 on the substrate 102, as described with reference to the previous embodiment.

[0076] A microelectronic assembly 150 similar to that shown in Figures 34 and 35 may be manufactured using any suitable technique. For example, Figures 37 through 41 are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly 150 of Figure 35 according to various embodiments.

[0077] FIG. 37 illustrates an assembly including a substrate 102 to which solder 106 has been applied. The solder 106 may be in electrical contact with the conductive contacts 114 and may be processed to allow the solder 106 to form an IMC. In some embodiments, the solder 106 of FIG. 37 may include a sinterable paste. The sinterable paste solder 106 may have a liquid phase containing solder particles and may be applied, for example, by pin dipping or stencil printing. After application, the sinterable paste solder 106 may undergo a reflow operation, which may convert the sinterable paste into an IMC. Because the IMC may be significantly harder mechanically than the initial sinterable paste, it can be mechanically ground away using coarse, low-cost grinding techniques without contamination (which would occur if the solder 106 were replaced with a softer material such as plated solder or copper). In some embodiments, the solder 106 of the assembly of FIG. 7 may be applied to a height greater than the desired height of the first portion of solder 106A. For example, in some embodiments, the solder 106 in the assembly of FIG. 7 may be applied to a height of between 30 and 40 microns.

[0078] FIG. 38 shows the assembly of FIG. 37 after the solder 106 of the assembly has been mechanically ground to form a first portion of solder 106A having a coplanar top surface. The top surface of the first portion of solder 106A may include grinding marks similar to those shown in FIG. 36. The hard IMC of the solder 106 may facilitate this grinding without contamination and may allow the top surface of the solder 106 to be used as a reference surface when attaching the bridge component 110. In some embodiments, the grinding operation may remove 10 to 20 microns of the solder 106, leaving a first portion of solder 106A having a height between 20 and 50 microns (e.g., between 20 and 40 microns or between 30 and 40 microns).

[0079] 39 shows the assembly after bonding bridge component 110 to the assembly of FIG. 38 using bonding nozzle 157 to bring bridge component 110 into position before reflowing the solder between conductive contacts 182 and 180. As shown, bonding nozzle 157 may rest on the mechanically ground top surface of first portion of solder 106A, thereby providing a reference surface for aligning bridge component 110 with respect to substrate 102. 39, in some embodiments, the top surface of the bridge component 110 may be flush with the mechanically ground top surface of the first portion of solder 106A, but this need not be the case, and if it is desired that the top surface of the bridge component 110 be above the plane of the mechanically ground top surface of the first portion of solder 106A (e.g., as shown in FIG. 40), or if it is desired that the top surface of the bridge component 110 be below the plane of the mechanically ground top surface of the first portion of solder 106A (e.g., as shown in FIG. 41), the bonding nozzle 157 may use the mechanically ground top surface of the first portion of solder 106A as a reference. After attaching the bridge component 110 to the substrate 102 to form the assembly of any of FIGS. 39-41, the microelectronic component 130 may be bonded to the assembly using the second portion of solder 106B, resulting in the microelectronic assembly 150 of FIG. 35. The microelectronic assembly 150 of Figure 34 can be manufactured using a process similar to that shown in Figures 36 to 41, but in which the height of the adhesive 122 between the bridge component 110 and the substrate 102 is controlled using the mechanically ground top surface of the first portion of solder 106A as a reference surface.

[0080] In some embodiments, the second portion of solder 106B may be a low-temperature solder including tin, silver, and copper, pure tin, tin, and copper, or other suitable mixtures. Because the first portion of solder 106A forms an IMC before the reflow of the second portion of solder 106B, the first portion of solder 106A may retain its shape during the reflow of the second portion of solder 106B. In some alternative embodiments, the bridge component 110 may be placed in the cavity 120 before the solder 106 is first deposited on the conductive contacts 114, or the solder 106 may be first deposited on the conductive contacts 114 and on the conductive contacts 118 of the bridge component 110, allowed to form an IMC, and then mechanically ground to flatten the solder 106 before attaching the microelectronic component 130. In such an embodiment, the solder 106 between the conductive contact 118 of the bridge component 110 and the conductive contact 134 of the microelectronic component 130 may also include a first portion of solder 106A having a mechanically ground top surface and a second portion of solder 106B.

[0081] In some embodiments, the geometry of the conductive contacts 180 and 182 and / or the geometry of the conductive contacts 118 and 134 may be selected to improve alignment between the substrate 102, the bridge component 110, and the microelectronic component 130 in the microelectronic assembly 150. For example, the "under-bridge" conductive contacts 180 and 182 and the solder 106 that couples them may be constructed with a larger solder volume and smaller conductive contact diameter so that the force from the solder 106 pushes the bridge component 110 "up" but does not exert a significant lateral force on the bridge component 110 (e.g., the bridge component 110 can "slide" laterally). Such an arrangement may help counteract the "downward" force exerted by the microelectronic component 130 on the bridge component 110. The "above-bridge" conductive contacts 118 and 134 may be configured such that the conductive contact 134 has a smaller diameter relative to the conductive contact 118, and the solder 106 joining the conductive contacts 118 and 134 has an adequate volume to extend over the sides of the conductive contact 134. Such an arrangement may allow the bridge component 110 to "float" laterally to achieve self-alignment between the conductive contacts 134 and 118 without exerting a significant downward force on the bridge component 110. Such an arrangement may help overcome misalignments commonly encountered during manufacturing due to manufacturing tolerances and different patterning operations forming different elements of the microelectronic assembly 150.

[0082] FIG. 42 shows a microelectronic assembly 150 including such an arrangement of conductive contacts 180 / 182 and conductive contacts 118 / 134. As shown in FIG. 42, diameter 159 of conductive contact 134 can be less than diameter 191 of conductive contact 118. In some embodiments, diameter 159 can be less than 60% of diameter 191 (e.g., less than 50% of diameter 191). In some embodiments, diameter 159 of conductive contact 134 can be between 20 microns and 35 microns, and diameter 191 of conductive contact 118 can be between 40 microns and 75 microns. As shown, the volume of solder 106 between conductive contact 134 and conductive contact 118 can be selected to be large enough to allow solder 106 to extend over the sides of conductive contact 134. In some embodiments, the relative diameters of conductive contact 134 and conductive contact 118 can be swapped. Specifically, diameter 159 of conductive contact 134 may be larger than diameter 191 of conductive contact 118. In some embodiments, diameter 191 may be less than 60% of diameter 159 (e.g., less than 50% of diameter 159). In some embodiments, diameter 191 of conductive contact 118 may be between 20 microns and 35 microns, and diameter 159 of conductive contact 134 may be between 40 microns and 75 microns. In some embodiments, diameter 159 may be approximately equal to diameter 191. In some embodiments, regardless of the relative diameters of conductive contact 118 and conductive contact 134, one or more of conductive contacts 134 may be in direct contact with the associated conductive contact 118. When this occurs, solder 106 associated with a contacting pair of conductive contacts 118 / 134 may not be in contact with solder 106 associated with any adjacent pair of conductive contacts 118 / 134.

[0083] As also shown in FIG. 42 , the volume of solder 106 coupling conductive contact 182 to conductive contact 180 may be such that the diameter of solder 106 is larger than the diameter of conductive contact 182 / 180. Specifically, solder 106 may extend onto the sides of conductive contact 182 / 180. To accommodate such a large volume of solder, in some embodiments, the pitch of conductive contacts 182 / 180 may be larger than the pitch of conductive contacts 134 / 118. In some specific embodiments, the diameter of conductive contacts 182 / 180 may be between 10 microns and 40 microns (e.g., between 15 microns and 25 microns). In some embodiments, surface finish 116 may extend onto the sides of conductive contact 180 (not shown). Any of the arrangements of conductive contacts 182 / 180 (and solder 106 therebetween) and / or conductive contacts 134 / 118 (and solder 106 therebetween) described herein with reference to FIG. 42 may be utilized in any suitable one of the microelectronic assemblies 150 disclosed herein.

[0084] In some embodiments, the bridge component 110 may not be part of the substrate 102, but instead may be included in a patch structure between the substrate 102 and the microelectronic component 130. For example, FIGS. 43 and 44 are side cross-sectional views of an exemplary microelectronic assembly 150 including a patch structure 161, according to various embodiments. The patch structure 161 may include the bridge component 110, which may have a molding material 165 on its "top" and / or "bottom" surfaces and may be conductively coupled to the "top" and "bottom" surfaces of the patch structure 161, as described further below. The patch structure 161 may also include a stack of conductive pillars 175. The stack of conductive pillars 175 may provide a conductive path between the “top” and “bottom” surfaces of the patch structure 161 such that the conductive contacts 118 of the bridge component 110 may be conductively coupled to the conductive contacts 134 of the microelectronic component 130 (via the intervening solder 106 and other structures described below) and the conductive contacts 182 of the bridge component 110 may be conductively coupled to the conductive contacts 180 of the substrate 102 (via the intervening solder 106 and other structures described below). Specifically, the stack of conductive pillars 175 may be coupled to the conductive contacts 132 of the microelectronic component 130 on the “top” surface of the patch structure 161 via the intervening solder 106, and may be coupled to the conductive contacts 114 of the substrate 102 on the “bottom” surface of the patch structure 161 via the intervening solder 106. An underfill material 147 may be disposed between the substrate 102 and the patch structure 161, and between the patch structure 161 and the microelectronic component 130. Various of the conductive pillars of the patch structure 161 may extend through the molding material 183, and the conductive pillars may comprise any suitable material (eg, copper).

[0085] 43 , the conductive pillars 175 may be arranged to decrease in diameter in a direction from the substrate 102 to the microelectronic component 130. The conductive contact 182 of the bridge component 110 may be coupled with the solder 106 to the conductive pillar 179 on the “bottom” surface of the patch structure 161, and the conductive contact 118 of the bridge component 110 may contact the conductive pillar 177 on the “top” surface of the patch structure 161. In the embodiment of FIG. 44 , the conductive pillars 175 may be arranged to increase in diameter in a direction from the substrate 102 to the microelectronic component 130. In various embodiments, the stack of conductive pillars 175 may include one conductive pillar 175 or more than two conductive pillars 175. The conductive contacts 182 of the bridge component 110 may contact the conductive pillars 179 on the "bottom" side of the patch structure 161, and the conductive contacts 118 of the bridge component 110 may contact the conductive pillars 181, which may be coupled to the conductive pillars 177 on the "top" side of the patch structure 161 by intervening solder 106. As shown in Figures 43 and 44, the conductive pillars 179 of the patch structure 161 may be coupled to the conductive contacts 114 of the substrate 102 by intervening solder 106, and the conductive pillars 177 of the patch structure 161 may be coupled to the conductive contacts 134 of the microelectronic component 130 by intervening solder 106.

[0086] 43 and 44 may represent a separation of the substrate 102 and the bridge component 110. The microelectronic assembly 150 of FIG. 44 may also allow for self-alignment of the bridge component 110 to the denser pitch conductive pillars 177 (versus the looser pitch conductive pillars 179) during manufacturing, potentially improving yield.

[0087] 45 through 52 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic assembly 150 of FIG. 44 according to various embodiments.

[0088] FIG. 45 shows an assembly including conductive pillars 175 and 177 on carrier 131. In some embodiments, carrier 131 can include glass. In some embodiments, conductive pillars 175 and 177 can be plated onto carrier 131. The number of plating operations depends on the number of pillars in the stack (e.g., three operations to form conductive pillar 175 of the assembly of FIG. 45). As shown in FIG. 45, the diameter of conductive pillar 175 formed in a subsequent plating operation can be reduced relative to the previous plating operation.

[0089] FIG. 46 shows the assembly after bonding bridge component 110 to the assembly of FIG. 45. Bridge component 110 may have previously been extended with conductive pillar 179 in contact with conductive contact 182 and extending through molding material 165, and conductive pillar 181 in contact with conductive contact 118 and extending through molding material 165. As shown in FIG. 46, conductive pillar 181 may be bonded to conductive pillar 177 with intervening solder 106. The bond between conductive pillar 181 and conductive pillar 177 may be the tightest pitch interconnect to be made to patch structure 161. Forming the interconnect at this stage in fabrication allows conductive pillar 181 and conductive pillar 177 to self-align or otherwise achieve minimal misalignment.

[0090] FIG. 47 shows the assembly after a molding material 183 has been applied onto the carrier 131 and around the structure of the assembly of FIG.

[0091] FIG. 48 shows the assembly of FIG. 47 after excess molding material 183 has been ground away to expose conductive pillars 175 and conductive pillars 179.

[0092] Figure 49 shows the assembly of Figure 48 after removing the carrier 131 and "flipping" the result and attaching it to another carrier 131 to expose the conductive pillars 177. In some embodiments, the carrier 131 of the assembly of Figure 49 can comprise glass.

[0093] Figure 50 shows the assembly of Figure 49 after providing solder 106 onto the exposed conductive pillars 175 and 177. In some embodiments, the solder 106 can be plated onto the assembly of Figure 49.

[0094] FIG. 51 shows the assembly after bonding the microelectronic component 130 to the conductive pillars 175 and 177 of the assembly of FIG. 49 via the interposed solder 106 and providing the molding material 144 (e.g., over the molding material) and the underfill material 147, as shown.

[0095] Figure 52 shows the assembly of Figure 51 after removing the carrier 131 and bonding the result to the substrate 102 via solder 106, with underfill material 147 provided between the patch structure 161 and the substrate 102. The assembly of Figure 52 may take the form of the microelectronic assembly 150 of Figure 44.

[0096] Although various of the embodiments disclosed herein are shown with respect to embodiments in which the conductive contacts 118 on the “top” surface of the bridge component 110 are exposed in the microelectronic structure 100 (i.e., an “open cavity” configuration), any suitable of the embodiments disclosed herein may be utilized in embodiments in which an additional layer of substrate 102 is built over and surrounds the bridge component 110 (i.e., an “embedded configuration”). For example, FIG. 53 illustrates a microelectronic assembly 150 having many features in common with various of the embodiments disclosed herein, but with additional dielectric material 112 and metal layers disposed “above” the bridge component 110. As shown in FIG. 53 , conductive pads and vias through this “additional” material may be used to enable the microelectronic component 130 to conductively couple to the conductive contacts 118 through the intervening material of the substrate 102. Similarly, any suitable of the embodiments disclosed herein may be utilized in such an embedded configuration.

[0097] The microelectronic structures 100 and microelectronic assemblies 150 disclosed herein may be included in any suitable electronic component. Figures 54 through 57 illustrate various examples of devices that may include any of the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein, as appropriate, or that may be included in the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein.

[0098] FIG. 54 is a plan view of a wafer 1500 and a die 1502 that may be included in any of the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein. For example, the die 1502 may be included in the microelectronic structure 100 / microelectronic assembly 150 as (or part of) the bridge component 110 and / or the microelectronic component 130. The wafer 1500 may be composed of semiconductor material and may include one or more die 1502 having IC structures formed on the surface of the wafer 1500. Each of the die 1502 may be a repeating unit of a semiconductor product, including any suitable IC. After fabrication of the semiconductor product is complete, the wafer 1500 may undergo a singulation process in which the die 1502 are separated from one another to provide individual "chips" of the semiconductor product. The die 1502 may include one or more transistors (e.g., some of the transistors 1640 in FIG. 55, described below), one or more diodes, and / or support circuitry for transferring electrical signals to the transistors and any other IC components. In some embodiments, die 1502 may be a “passive” die in that it does not include active components (e.g., transistors), while in other embodiments, die 1502 may be an “active” die in that it includes active components. In some embodiments, wafer 1500 or die 1502 may include memory devices (e.g., random access memory (RAM) devices such as static RAM (SRAM) devices, magnetic RAM (MRAM) devices, resistive RAM (RRAM) devices, conductive bridge RAM (CBRAM) devices, etc.), logic devices (e.g., AND gates, OR gates, NAND gates, or NOR gates), or any other suitable circuit elements. Multiple of these devices may be combined on a single die 1502. For example, a memory array formed by multiple memory devices may be formed on the same die 1502 as a processing device (e.g., processing device 1802 of FIG. 57 ) or other logic configured to store information in the memory devices or execute instructions stored in the memory array.

[0099] FIG. 55 is a cross-sectional side view of an IC device 1600 that may be included in the microelectronic structure 100 and / or microelectronic assembly 150. For example, the IC device 1600 may be included in the microelectronic structure 100 / microelectronic assembly 150 as (or part of) the bridge component 110 and / or the microelectronic component 130. The IC device 1600 may be part of a die 1502 (e.g., as described above with reference to FIG. 54). One or more of the IC devices 1600 may be included in one or more dies 1502 (FIG. 54). The IC devices 1600 may be formed on a substrate 1602 (e.g., wafer 1500 of FIG. 54) or may be included in a die (e.g., die 1502 of FIG. 54). The substrate 1602 may be a semiconductor substrate composed of a semiconductor material system, including, for example, an n-type or p-type material system (or a combination of both). Substrate 1602 may include, for example, a crystalline substrate formed using bulk silicon or a silicon-on-insulator (SOI) substructure. In some embodiments, substrate 1602 may be formed using alternative materials, which may or may not be combined with silicon, including, but not limited to, germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide. Additional materials classified as II-VI, III-V, or IV may also be used to form substrate 1602. While a few examples of materials from which substrate 1602 may be formed are described here, any material capable of serving as the foundation for IC device 1600 may be used. Substrate 1602 may be part of a singulated die (e.g., die 1502 of FIG. 54) or a wafer (e.g., wafer 1500 of FIG. 54).

[0100] The IC device 1600 may include one or more device layers 1604 disposed on a substrate 1602. The device layer 1604 may include features of one or more transistors 1640 (e.g., metal-oxide-semiconductor field-effect transistors (MOSFETs)) formed on the substrate 1602. The device layer 1604 may include, for example, one or more source and / or drain (S / D) regions 1620, a gate 1622 for controlling the flow of current in the transistor 1640 between the S / D regions 1620, and one or more S / D contacts 1624 for transferring electrical signals to / from the S / D regions 1620. The transistor 1640 may include additional features not shown for clarity, such as device isolation regions, gate contacts, etc. The transistor 1640 is not limited to the types and configurations shown in FIG. 55 and may include a variety of other types and configurations, such as, for example, planar transistors, non-planar transistors, or a combination of both. Planar transistors may include bipolar junction transistors (BJTs), heterojunction bipolar transistors (HBTs), or high electron mobility transistors (HEMTs). Non-planar transistors may include FinFET transistors, such as double-gate or tri-gate transistors, and wrap-around or all-around gate transistors, such as nanoribbon and nanowire transistors.

[0101] Each transistor 1640 may include a gate 1622 formed of at least two layers, a gate dielectric, and a gate electrode. The gate dielectric may include one layer or a stack of layers. One or more layers may include silicon oxide, silicon dioxide, silicon carbide, and / or high-k dielectric materials. The high-k dielectric materials may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used in the gate dielectric include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, an annealing process may be performed on the gate dielectric to improve the quality of the gate dielectric when high-k materials are used.

[0102] A gate electrode may be formed on the gate dielectric and may include at least one p-type work function metal or n-type work function metal depending on whether the transistor 1640 is to be a p-type metal oxide semiconductor (PMOS) or n-type metal oxide semiconductor (NMOS) transistor. In some implementations, the gate electrode may consist of a stack of two or more metal layers, where one or more metal layers are work function metal layers and at least one metal layer is a fill metal layer. Additional metal layers, such as barrier layers, may be included for other purposes. For PMOS transistors, metals that may be used in the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides (e.g., ruthenium oxide), and any of the metals described below with reference to NMOS transistors (e.g., for work function tuning). For NMOS transistors, metals that may be used in the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, carbides of these metals (e.g., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide), and any of the metals mentioned above with reference to PMOS transistors (e.g., for work function tuning).

[0103] In some embodiments, when viewed as a cross-section of transistor 1640 along the source-channel-drain direction, the gate electrode can comprise a U-shaped structure including a bottom portion substantially parallel to the surface of the substrate and two sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, at least one of the metal layers forming the gate electrode can simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, the gate electrode can comprise a combination of a U-shaped structure and a planar, non-U-shaped structure. For example, the gate electrode can comprise one or more U-shaped metal layers formed on one or more planar, non-U-shaped layers.

[0104] In some embodiments, a pair of sidewall spacers may be formed on opposing sides of the gate stack to surround the gate stack. The sidewall spacers may be formed from materials such as silicon nitride, silicon oxide, silicon carbide, carbon-doped silicon nitride, or silicon oxynitride. Processes for forming sidewall spacers are well known in the art and generally include deposition and etching steps. In some embodiments, multiple spacer pairs may be used, for example, two, three, or four pairs of sidewall spacers may be formed on opposing sides of the gate stack.

[0105] The S / D regions 1620 may be formed in the substrate 1602 adjacent to the gate 1622 of each transistor 1640. The S / D regions 1620 may be formed using, for example, an implantation / diffusion process or an etching / deposition process. In the former process, dopants such as boron, aluminum, antimony, phosphorus, or arsenic may be ion-implanted into the substrate 1602 to form the S / D regions 1620. The ion-implantation process may be followed by an annealing process to activate the dopants and diffuse them further into the substrate 1602. In the latter process, the substrate 1602 may first be etched to form recesses at the locations of the S / D regions 1620. An epitaxial deposition process may then be performed to fill the recesses with the material used to fabricate the S / D regions 1620. In some implementations, the S / D regions 1620 may be fabricated using silicon germanium or a silicon alloy such as silicon carbide. In some embodiments, the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorus. In some embodiments, the S / D regions 1620 may be formed using one or more alternative semiconductor materials, such as germanium or a III-V material or alloy. In further embodiments, one or more layers of metal and / or metal alloy may be used to form the S / D regions 1620.

[0106] Electrical signals, such as power and / or I / O signals, may be transferred to and / or from devices (e.g., transistor 1640) in device layer 1604 through one or more interconnect layers (shown in FIG. 55 as interconnect layers 1606-1610) disposed on device layer 1604. For example, conductive features (e.g., gate 1622 and S / D contacts 1624) in device layer 1604 may be electrically coupled to interconnect structures 1628 in interconnect layers 1606-1610. One or more interconnect layers 1606-1610 may form a metallization stack (also referred to as an “ILD stack”) 1619 of IC device 1600. In some embodiments, IC device 1600 may be a “passive” device in that it does not include active components (e.g., transistors), while in other embodiments, die 1502 may be an “active” die in that it includes active components.

[0107] Interconnect structures 1628 may be arranged within interconnect layers 1606-1610 to transfer electrical signals according to a variety of designs (notably, such arrangements are not limited to the particular configuration of interconnect structures 1628 shown in Figure 55). Although a particular number of interconnect layers 1606-1610 are shown in Figure 55, embodiments of the present disclosure include IC devices having more or fewer interconnect layers than those shown.

[0108] In some embodiments, the interconnect structures 1628 may include lines 1628a and / or vias 1628b filled with a conductive material, such as a metal. The lines 1628a may be arranged to transfer electrical signals in a plane that is substantially parallel to the surface of the substrate 1602 on which the device layer 1604 is formed. For example, the lines 1628a may transfer electrical signals in a direction into and out of the page from the perspective of FIG. 55. The vias 1628b may be arranged to transfer electrical signals in a plane that is substantially perpendicular to the surface of the substrate 1602 on which the device layer 1604 is formed. In some embodiments, the vias 1628b may electrically couple together the lines 1628a of different interconnect layers 1606-1610.

[0109] 55, the interconnect layers 1606-1610 can include a dielectric material 1626 disposed between interconnect structures 1628. In some embodiments, the dielectric material 1626 disposed between the interconnect structures 1628 in different ones of the interconnect layers 1606-1610 can have different compositions. In other embodiments, the composition of the dielectric material 1626 between different interconnect layers 1606-1610 can be the same.

[0110] A first interconnect layer 1606 may be formed over the device layer 1604. As shown, in some embodiments, the first interconnect layer 1606 may include lines 1628a and / or vias 1628b. The lines 1628a of the first interconnect layer 1606 may be coupled to contacts (e.g., S / D contacts 1624) of the device layer 1604.

[0111] A second interconnect layer 1608 may be formed over the first interconnect layer 1606. In some embodiments, the second interconnect layer 1608 may include vias 1628b for coupling lines 1628a of the second interconnect layer 1608 with lines 1628a of the first interconnect layer 1606. Although the lines 1628a and vias 1628b are structurally depicted as lines within each interconnect layer (e.g., within the second interconnect layer 1608) for clarity, in some embodiments, the lines 1628a and vias 1628b may be structurally and / or materially continuous (e.g., filled simultaneously during a dual damascene process).

[0112] The third interconnect layer 1610 (and additional interconnect layers, if desired) may be successively formed on the second interconnect layer 1608 according to techniques and configurations similar to those described in connection with the second interconnect layer 1608 or the first interconnect layer 1606. In some embodiments, interconnect layers "higher" in the metallization stack 1619 within the IC device 1600 (i.e., farther away from the device layer 1604) may be thicker.

[0113] The IC device 1600 may include a surface insulating material 1634 (e.g., polyimide or a similar material) and one or more conductive contacts 1636 formed on the interconnect layers 1606-1610. In FIG. 55, the conductive contacts 1636 are shown to take the form of bond pads. The conductive contacts 1636 may be electrically coupled to the interconnect structure 1628 and may be configured to transfer electrical signals from the transistor 1640 to other external devices. For example, solder bonds may be formed on the one or more conductive contacts 1636 to mechanically and / or electrically couple a chip including the IC device 1600 to another component (e.g., a circuit board). The IC device 1600 may include additional or alternative structures for transferring electrical signals from the interconnect layers 1606-1610. For example, the conductive contacts 1636 may include other similar features (e.g., posts) that transfer electrical signals to external components.

[0114] 56 is a cross-sectional side view of an IC device assembly 1700 that may include one or more microelectronic structures 100 and / or microelectronic assemblies 150 according to any of the embodiments disclosed herein. The IC device assembly 1700 includes multiple components disposed on a circuit board 1702 (which may be, for example, a motherboard). The IC device assembly 1700 includes components disposed on a first side 1740 of the circuit board 1702 and on an opposing second side 1742 of the circuit board 1702. Generally, components may be disposed on one or both of the sides 1740 and 1742. Any of the IC packages described below with reference to the IC device assembly 1700 may take the form of any of the embodiments of the microelectronic assembly 150 described herein or may otherwise include any of the microelectronic structures 100 disclosed herein.

[0115] In some embodiments, circuit board 1702 may be a PCB including multiple metal layers separated from one another by layers of dielectric material and interconnected by conductive vias, any one or more of which may be formed with a desired circuit pattern to transfer electrical signals (optionally in conjunction with other metal layers) between components coupled to circuit board 1702. In other embodiments, circuit board 1702 may be a non-PCB substrate.

[0116] The IC device assembly 1700 shown in Figure 56 includes a package-on-interposer structure 1736 coupled to a first surface 1740 of a circuit board 1702 by coupling components 1716. The coupling components 1716 may electrically and mechanically couple the package-on-interposer structure 1736 to the circuit board 1702 and may include solder balls (shown in Figure 56), male and female portions of a socket, adhesive, underfill material, and / or any other suitable electrical and / or mechanical coupling structure.

[0117] The package-on-interposer structure 1736 may include an IC package 1720 coupled to a package interposer 1704 by a coupling component 1718. The coupling component 1718 may take any suitable form for the application, such as those described above with reference to the coupling component 1716. While a single IC package 1720 is shown in FIG. 56, multiple IC packages may be coupled to the package interposer 1704, and in fact, additional interposers may be coupled to the package interposer 1704. The package interposer 1704 may provide an intervening substrate used to bridge the circuit board 1702 and the IC package 1720. The IC package 1720 may be or include, for example, a die (such as the die 1502 in FIG. 54), an IC device (such as the IC device 1600 in FIG. 55), or any other suitable component. In general, the package interposer 1704 may spread connections to a wider pitch or reroute certain connections to different connections. For example, the package interposer 1704 may couple an IC package 1720 (e.g., a die) to a set of ball grid array (BGA) conductive contacts of the mating component 1716 for coupling to the circuit board 1702. In the embodiment shown in FIG. 56, the IC package 1720 and the circuit board 1702 are attached to opposite sides of the package interposer 1704. In other embodiments, the IC package 1720 and the circuit board 1702 may be attached to the same side of the package interposer 1704. In some embodiments, three or more components may be interconnected by the package interposer 1704.

[0118] In some embodiments, the package interposer 1704 may be formed as a PCB including multiple metal layers separated from each other by layers of dielectric material and interconnected by conductive vias. In some embodiments, the package interposer 1704 may be formed from a polymeric material such as epoxy, fiberglass-reinforced epoxy, epoxy with inorganic fillers, ceramic material, or polyimide. In some embodiments, the package interposer 1704 may be formed from alternative rigid or flexible materials. Such materials may include the same materials mentioned above for semiconductor substrates, such as silicon, germanium, and other III-V and IV materials. The package interposer 1704 may include metal lines 1710 and vias 1708, including, but not limited to, through-silicon vias (TSVs) 1706. The package interposer 1704 may further include embedded devices 1714, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices such as radio frequency devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (MEMS) devices may also be formed on the package interposer 1704. The package-on-interposer structure 1736 may take the form of any of the package-on-interposer structures known in the art. In some embodiments, the package interposer 1704 may include one or more microelectronic structures 100 and / or microelectronic assemblies 150.

[0119] IC device assembly 1700 may include an IC package 1724 coupled to a first surface 1740 of circuit board 1702 by a coupling component 1722. Coupling component 1722 may take the form of any of the embodiments described above with reference to coupling component 1716, and IC package 1724 may take the form of any of the embodiments described above with reference to IC package 1720.

[0120] 56 includes a package-on-package structure 1734 coupled to a second surface 1742 of a circuit board 1702 by a coupling component 1728. The package-on-package structure 1734 may include an IC package 1726 and an IC package 1732 coupled together by a coupling component 1730 such that the IC package 1726 is disposed between the circuit board 1702 and the IC package 1732. The coupling components 1728 and 1730 may take the form of any of the embodiments of the coupling component 1716 described above, and the IC packages 1726 and 1732 may take the form of any of the embodiments of the IC package 1720 described above. The package-on-package structure 1734 may be configured according to any of the package-on-package structures known in the art.

[0121] FIG. 57 is a block diagram of an exemplary electrical device 1800 that may include one or more microelectronic structures 100 and / or microelectronic assemblies 150 according to any of the embodiments disclosed herein. For example, any suitable ones of the components of the electrical device 1800 may include one or more of the microelectronic structures 100, microelectronic assemblies 150, IC device assemblies 1700, IC devices 1600, or dies 1502 disclosed herein. While multiple components are shown in FIG. 57 as being included in the electrical device 1800, any one or more of these components may be omitted or duplicated if appropriate for the application. In some embodiments, some or all of the components included in the electrical device 1800 may be mounted on one or more motherboards. In some embodiments, some or all of these components are fabricated on a single system-on-chip (SoC) die.

[0122] 57 , but may include interface circuitry for coupling one or more components. For example, electrical device 1800 may not include display device 1806, but may include display device interface circuitry (e.g., connectors and driver circuits) to which display device 1806 may be coupled. In another set of examples, electrical device 1800 may not include audio input device 1824 or audio output device 1808, but may include audio input or output device interface circuitry (e.g., connectors and support circuits) to which audio input device 1824 or audio output device 1808 may be coupled.

[0123] The electrical device 1800 may include a processing device 1802 (e.g., one or more processing devices). As used herein, the terms “processing device” or “processor” may refer to any device or portion of a device that processes electronic data from registers and / or memory and converts the electronic data into other electronic data that can be stored in registers and / or memory. The processing device 1802 may include one or more digital signal processors (DSPs), application specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), cryptographic processors (dedicated processors that execute cryptographic algorithms in hardware), server processors, or any other suitable processing devices. The electrical device 1800 may include memory 1804. The memory 1804 may itself include one or more memory devices, such as volatile memory (e.g., dynamic random access memory (DRAM)), non-volatile memory (e.g., read-only memory (ROM)), flash memory, solid-state memory, and / or a hard drive. In some embodiments, the memory 1804 may include memory that shares a die with the processing device 1802. This memory may be used as cache memory and may include embedded dynamic random access memory (eDRAM) or spin transfer torque magnetic random access memory (STT-MRAM).

[0124] In some embodiments, electrical device 1800 may include a communications chip 1812 (e.g., one or more communications chips). For example, communications chip 1812 may be configured to manage wireless communications for the transfer of data to and from electrical device 1800. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc. that may communicate data through the use of modulated electromagnetic radiation over a non-solid medium. Although the associated devices may not include wiring in some embodiments, the term does not imply that the associated devices do not include any wiring.

[0125] The communications chip 1812 may implement any of a number of wireless standards or protocols, including, but not limited to, Institute of Electrical and Electronics Engineers (IEEE) standards, including Wi-Fi® (IEEE 802.11 family), the IEEE 802.16 standard (e.g., the IEEE 802.16-2005 amendment), the Long Term Evolution (LTE) project with any amendments, updates, and / or revisions (e.g., the Advanced LTE project, the Ultra Mobile Broadband (UMB) project (also referred to as "3GPP2"), etc.). Broadband Wireless Access (BWA) networks compatible with IEEE 802.16 are commonly referred to as WiMAX® networks. This acronym stands for Worldwide Interoperability for Microwave Access and is a certification mark for products that have passed IEEE 802.16 standard compliance and interoperability testing. The communications chip 1812 may operate according to Global System for Mobile Communications (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed ​​Packet Access (HSPA), Evolved HSPA (E-HSPA or LTE network). The communications chip 1812 may operate according to Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communications chip 1812 may operate according to Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution Data Optimized (EV-DO), and their derivatives, as well as any other wireless protocols designated as 3G, 4G, 5G, and beyond. In other embodiments, the communications chip 1812 may operate according to other wireless protocols. The electrical device 1800 may include an antenna 1822 for facilitating wireless communication and / or for receiving other wireless communications (such as AM or FM radio transmissions).

[0126] In some embodiments, the communications chip 1812 may manage wired communications, such as electrical, optical, or any other suitable communications protocol (e.g., Ethernet). As noted above, the communications chip 1812 may include multiple communications chips. For example, a first communications chip 1812 may be dedicated to shorter-range wireless communications, such as Wi-Fi or Bluetooth, and a second communications chip 1812 may be dedicated to longer-range wireless communications, such as Global Positioning System (GPS), EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, the first communications chip 1812 may be dedicated to wireless communications, and the second communications chip 1812 may be dedicated to wired communications.

[0127] Electric device 1800 may include battery / power circuitry 1814. Battery / power circuitry 1814 may include one or more energy storage devices (e.g., batteries or capacitors) and / or circuitry for coupling components of electric device 1800 to an energy source (e.g., AC line power) separate from electric device 1800.

[0128] Electrical device 1800 may include a display device 1806 (or corresponding interface circuitry as described above). Display device 1806 may include any visual indicator, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display.

[0129] The electrical device 1800 may include an audio output device 1808 (or corresponding interface circuitry as described above). The audio output device 1808 may include any device that generates an audible indicator, such as a speaker, a headset, or earbuds.

[0130] The electrical device 1800 may include an audio input device 1824 (or corresponding interface circuitry as described above). The audio input device 1824 may include any device that generates a signal representing sound, such as a microphone, a microphone array, or a digital device (e.g., a device with a Musical Instrument Digital Interface (MIDI) output).

[0131] Electrical device 1800 may include a GPS device 1818 (or corresponding interface circuitry as described above), which may communicate with a satellite-based system and receive the location of electrical device 1800 in a manner known in the art.

[0132] Electrical device 1800 may include other output devices 1810 (or corresponding interface circuits as described above). Examples of other output devices 1810 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or additional storage devices.

[0133] The electrical device 1800 may include other input devices 1820 (or corresponding interface circuits as described above). Examples of other input devices 1820 may include an accelerometer, a gyroscope, a compass, an imaging device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a barcode reader, a quick response (QR) code reader, any sensor, or a radio frequency identification (RFID) reader.

[0134] Electrical device 1800 may have any desired form factor, such as a handheld or mobile electrical device (e.g., a mobile phone, a smartphone, a mobile internet device, a music player, a tablet computer, a laptop computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultra-mobile personal computer, etc.), a desktop electrical device, a server device or other networked computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable electrical device. In some embodiments, electrical device 1800 may be any other electronic device that processes data.

[0135] The following paragraphs provide various examples of the embodiments disclosed herein.

[0136] Example A1 is a microelectronic assembly comprising a microelectronic component having a first conductive contact, a second conductive contact coupled to the first conductive contact by a first solder, the first solder embedded in a molding material that extends around a side of the microelectronic component, and a third conductive contact coupled to the second conductive contact by a second solder, the second solder and the third conductive contact being outside the molding material.

[0137] Example A2 includes the subject matter of Example A1, and further specifies that the first conductive contact is one of a plurality of first conductive contacts, the second conductive contact is one of a plurality of second conductive contacts, the first solder is one of a plurality of first solders, each of the second conductive contacts is coupled to each of the first conductive contacts by a respective one of the first solders, the first solder is embedded in the molding material, the third conductive contact is one of a plurality of third conductive contacts, the second solder is one of a plurality of second solders, and each of the third conductive contacts is coupled to each of the second conductive contacts by a respective one of the second solders.

[0138] The second solder and the third conductive contact are outside the molding material.

[0139] Example A3 includes the subject matter of Example A2, and further specifies that the first conductive contacts have a pitch greater than 50 microns.

[0140] Example A4 includes the subject matter of any of Examples A2-3, further specifying that the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts, each of a plurality of fifth conductive contacts is coupled to each of the fourth conductive contacts by a respective one of a plurality of third solders, the third solders being embedded in the molding material, each of a plurality of sixth conductive contacts is coupled to each of the fifth conductive contacts by a respective one of a plurality of fourth solders, the fourth solders and the sixth conductive contacts are outside the molding material, and the fourth conductive contacts have a pitch less than the pitch of the first conductive contacts.

[0141] Example A5 includes the subject matter of Example A4, and further provides that the fourth conductive contacts have a pitch that is less than 30 microns.

[0142] Example A6 includes the subject matter of any of Examples A4-A5, and further specifies that the sixth conductive contact is a conductive contact of a bridge component.

[0143] Example A7 includes the subject matter of Example A6, and further specifies that the bridge component includes a transistor.

[0144] Example A8 includes the subject matter of Example A6, and further specifies that the bridge component does not include a transistor.

[0145] Example A9 includes the subject matter of any of Examples A6-A7, further specifying that the microelectronic component is a first microelectronic component, and the microelectronic assembly further comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to each of the seventh conductive contacts by a respective plurality of fifth solders, the fifth solders embedded in the molding material and the molding material extending around a periphery of a side of the second microelectronic component; and a plurality of ninth conductive contacts coupled to each of the eighth conductive contacts by a respective plurality of sixth solders, the sixth solders and the ninth conductive contacts being outside the molding material; the sixth conductive contacts located on a face of the bridge component; and the ninth conductive contact being a conductive contact of the bridge component and located on the face of the bridge component.

[0146] Example A10 includes the subject matter of Example A9, further providing that the first microelectronic component and the second microelectronic component have different thicknesses.

[0147] Example A11 includes the subject matter of any of Examples A9-A10, further providing that the seventh conductive contact has a pitch that is less than 30 microns.

[0148] Example A12 includes the subject matter of any of Examples A9-A11, further providing that the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the seventh conductive contact; each of the plurality of eleventh conductive contacts is coupled to each of the tenth conductive contacts by a respective one of a plurality of seventh solders, the seventh solders being embedded in the molding material; each of the plurality of twelfth conductive contacts is coupled to each of the eleventh conductive contacts by a respective one of a plurality of eighth solders, the eighth solders and the twelfth conductive contacts being outside the molding material; and the tenth conductive contacts have a pitch greater than the pitch of the seventh conductive contacts.

[0149] Example A13 includes the subject matter of Example A12, further specifying that the twelfth conductive contact and the third conductive contact are on a surface of a substrate.

[0150] Example A14 includes the subject matter of Example A13, and further provides that the bridge component extends into a cavity in the substrate.

[0151] Example A15 includes the subject matter of Example A14, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0152] Example A16 includes the subject matter of any of Examples A12 to A15, and further provides that the substrate comprises an organic dielectric material.

[0153] Example A17 includes the subject matter of any of Examples A12 to A16, and further specifies that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0154] Example A18 includes the subject matter of any of Examples A12 to A16, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite a surface of the bridge component on which the sixth conductive contact is located.

[0155] Example A19 includes the subject matter of any of Examples A12-A18, and further includes an underfill material around the bridge component.

[0156] Example A20 includes the subject matter of any of Examples A6-A19, further providing that the third conductive contact is on a surface of the substrate.

[0157] Example A21 includes the subject matter of Example A20, and further provides that the bridge component extends into a cavity in the substrate.

[0158] Example A22 includes the subject matter of Example A21, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0159] Example A23 includes the subject matter of any of Examples A20-A22, and further provides that the substrate comprises an organic dielectric material.

[0160] Example A24 includes the subject matter of any of Examples A20 to A23, and further specifies that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0161] Example A25 includes the subject matter of any of Examples A6 to A23, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite a surface of the bridge component on which the sixth conductive contact is located.

[0162] Example A26 includes the subject matter of any of Examples A6-A25, and further includes an underfill material around the bridge component.

[0163] Example A27 includes the subject matter of any of Examples A1-A26, further providing that the third conductive contact is on a surface of the substrate.

[0164] Example A28 includes the subject matter of Example A27, and further provides that the substrate includes an organic dielectric material.

[0165] Example A29 includes the subject matter of any of Examples A27-A28, and further includes an underfill material between the substrate and the molding material.

[0166] Example A30 is a microelectronic assembly comprising a microelectronic component having a first conductive contact, a second conductive contact coupled to the first conductive contact by a first solder, the first solder being embedded in a molding material, and a third conductive contact coupled to the second conductive contact by a second solder, the second solder being outside the molding material.

[0167] Example A31 includes the subject matter of Example A30, and further specifies that the first conductive contact is one of a plurality of first conductive contacts, the second conductive contact is one of a plurality of second conductive contacts, the first solder is one of a plurality of first solders, each of the second conductive contacts is coupled to each of the first conductive contacts by a respective one of the first solders, the first solder is embedded in the molding material, the third conductive contact is one of a plurality of third conductive contacts, the second solder is one of a plurality of second solders, and each of the third conductive contacts is coupled to each of the second conductive contacts by a respective one of the second solders.

[0168] The second solder and the third conductive contact are outside the molding material.

[0169] Example A32 includes the subject matter of Example A31, and further specifies that the first conductive contacts have a pitch greater than 50 microns.

[0170] Example A33 includes the subject matter of any of Examples A31-A32, further providing that the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts, each of a plurality of fifth conductive contacts coupled to each of the fourth conductive contacts by a respective plurality of third solders, the third solders being embedded in the molding material, each of a plurality of sixth conductive contacts coupled to each of the fifth conductive contacts by a respective plurality of fourth solders, the fourth solders and the sixth conductive contacts being outside the molding material, and the fourth conductive contacts having a pitch less than the pitch of the first conductive contacts.

[0171] Example A34 includes the subject matter of Example A33, and further specifies that the fourth conductive contacts have a pitch that is less than 30 microns.

[0172] Example A35 includes the subject matter of any of Examples A33-A34, and further specifies that the sixth conductive contact is a conductive contact of a bridge component.

[0173] Example A36 includes the subject matter of Example A35, and further specifies that the bridge component includes a transistor.

[0174] Example A37 includes the subject matter of Example A35, and further specifies that the bridge component does not include a transistor.

[0175] Example A38 includes the subject matter of any of Examples A35-A36, further specifying that the microelectronic component is a first microelectronic component, and the microelectronic assembly further comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to each of the seventh conductive contacts by a respective plurality of fifth solders, the fifth solders embedded in the molding material and the molding material extending around a periphery of a side of the second microelectronic component; and a plurality of ninth conductive contacts coupled to each of the eighth conductive contacts by a respective plurality of sixth solders, the sixth solders and the ninth conductive contacts being outside the molding material; the sixth conductive contacts located on a face of the bridge component; and the ninth conductive contact being a conductive contact of the bridge component and located on the face of the bridge component.

[0176] Example A39 includes the subject matter of Example A38, and further provides that the first microelectronic component and the second microelectronic component have different thicknesses.

[0177] Example A40 includes the subject matter of any of Examples A38-A39, and further specifies that the seventh conductive contact has a pitch that is less than 30 microns.

[0178] Example A41 includes the subject matter of any of Examples A38-A40, further providing that the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the seventh conductive contact; each of a plurality of eleventh conductive contacts is coupled to each of the tenth conductive contacts by a respective one of a plurality of seventh solders, the seventh solders being embedded in the molding material; each of a plurality of twelfth conductive contacts is coupled to each of the eleventh conductive contacts by a respective one of a plurality of eighth solders, the eighth solders and the twelfth conductive contacts being outside the molding material; and the tenth conductive contacts have a pitch greater than the pitch of the seventh conductive contacts.

[0179] Example A42 includes the subject matter of Example A41, and further provides that the twelfth conductive contact and the third conductive contact are on a surface of a substrate.

[0180] Example A43 includes the subject matter of Example A42, and further provides that the bridge component extends into a cavity in the substrate.

[0181] Example A44 includes the subject matter of Example A43, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0182] Example A45 includes the subject matter of any of Examples A41 to A44, and further provides that the substrate comprises an organic dielectric material.

[0183] Example 46 includes the subject matter of any of Examples A41 to A45, further specifying that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0184] Example A47 includes the subject matter of any of Examples A41 to A45, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite the surface of the bridge component on which the sixth conductive contact is located.

[0185] Example A48 includes the subject matter of any of Examples A41 to A47, and further includes an underfill material around the bridge component.

[0186] Example A49 includes the subject matter of any of Examples A35-A48, further providing that the third conductive contact is on a surface of the substrate.

[0187] Example A50 includes the subject matter of Example A49, and further provides that the bridge component extends into a cavity in the substrate.

[0188] Example A51 includes the subject matter of Example A50, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0189] Example A52 includes the subject matter of any of Examples A49 to A51, and further provides that the substrate includes an organic dielectric material.

[0190] Example A53 includes the subject matter of any of Examples A49 to A52, and further specifies that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0191] Example A54 includes the subject matter of any of Examples A35 to A52, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite a surface of the bridge component on which the sixth conductive contact is located.

[0192] Example A55 includes the subject matter of any of Examples A35-A54, and further includes an underfill material around the bridge component.

[0193] Example A56 includes the subject matter of any of Examples A30-A55, further providing that the third conductive contact is on a surface of the substrate.

[0194] Example A57 includes the subject matter of Example A56, and further provides that the substrate includes an organic dielectric material.

[0195] Example A58 includes the subject matter of any of Examples A56-A57, and further includes an underfill material between the substrate and the molding material.

[0196] Example A59 includes a microelectronic component having a plurality of first conductive contacts; a plurality of second conductive contacts coupled to each of the first conductive contacts by a respective one of a plurality of first solders, the first solders being embedded in a molding material; a plurality of third conductive contacts coupled to each of the second conductive contacts by a respective one of a plurality of second solders; a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts; a plurality of fifth conductive contacts coupled to each of the fourth conductive contacts by a respective one of a plurality of third solders, the third solders being embedded in the molding material; and a plurality of sixth conductive contacts coupled to each of the fifth conductive contacts by a respective one of a plurality of fourth solders, the sixth conductive contacts being conductive contacts of a bridge component. A microelectronic assembly comprising:

[0197] Example A60 includes the subject matter of Example A59, and further provides that the fourth conductive contacts have a pitch that is less than the pitch of the first conductive contacts.

[0198] Example A61 includes the subject matter of any of Examples A59-A60, and further specifies that the bridge component includes a transistor.

[0199] Example A62 includes the subject matter of any of Examples A59-A60, and further specifies that the bridge component does not include a transistor.

[0200] Example A63 includes the subject matter of any of Examples A59-A62, and further provides that the first conductive contacts have a pitch greater than 50 microns.

[0201] Example A64 includes the subject matter of any of Examples A59 to A63, further providing that the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts, each of a plurality of fifth conductive contacts coupled to each of the fourth conductive contacts by a respective plurality of third solders, the third solders being embedded in the molding material, each of a plurality of sixth conductive contacts coupled to each of the fifth conductive contacts by a respective plurality of fourth solders, the fourth solders and the sixth conductive contacts being outside the molding material, and the fourth conductive contacts having a pitch less than the pitch of the first conductive contacts.

[0202] Example A65 includes the subject matter of Example A64, and further provides that the fourth conductive contacts have a pitch that is less than 30 microns.

[0203] Example A66 includes the subject matter of any of Examples A64-A65, further specifying that the microelectronic component is a first microelectronic component, and the microelectronic assembly further comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to each of the seventh conductive contacts by a respective plurality of fifth solders, the fifth solders embedded in the molding material and the molding material extending around a periphery of a side of the second microelectronic component; and a plurality of ninth conductive contacts coupled to each of the eighth conductive contacts by a respective plurality of sixth solders, the sixth solders and the ninth conductive contacts being outside the molding material; the sixth conductive contacts located on a face of the bridge component; and the ninth conductive contact being a conductive contact of the bridge component and located on the face of the bridge component.

[0204] Example A67 includes the subject matter of Example A66, and further provides that the first microelectronic component and the second microelectronic component have different thicknesses.

[0205] Example A68 includes the subject matter of any of Examples A66-A67, further providing that the seventh conductive contact has a pitch that is less than 30 microns.

[0206] Example A69 includes the subject matter of any of Examples A66-A68, further providing that the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the seventh conductive contacts; each of a plurality of eleventh conductive contacts is coupled to each of the tenth conductive contacts by a respective one of a plurality of seventh solders, the seventh solders being embedded in the molding material; each of a plurality of twelfth conductive contacts is coupled to each of the eleventh conductive contacts by a respective one of a plurality of eighth solders, the eighth solders and the twelfth conductive contacts being outside the molding material; and the tenth conductive contacts have a pitch greater than the pitch of the seventh conductive contacts.

[0207] Example A70 includes the subject matter of Example A69, and further provides that the twelfth conductive contact and the third conductive contact are on a surface of a substrate.

[0208] Example A71 includes the subject matter of Example A70, and further provides that the bridge component extends into a cavity in the substrate.

[0209] Example A72 includes the subject matter of Example A71, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0210] Example A73 includes the subject matter of any of Examples A69-A72, and further provides that the substrate includes an organic dielectric material.

[0211] Example A74 includes the subject matter of any of Examples A69 to A73, and further specifies that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0212] Example A75 includes the subject matter of any of Examples A69 to A73, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite the surface of the bridge component on which the sixth conductive contact is located.

[0213] Example A76 includes the subject matter of any of Examples A69-A75, and further includes an underfill material around the bridge component.

[0214] Example A77 includes the subject matter of any of Examples A64-A76, further providing that the third conductive contact is on a surface of the substrate.

[0215] Example A78 includes the subject matter of Example A77, and further provides that the bridge component extends into a cavity in the substrate.

[0216] Example A79 includes the subject matter of Example A78, and further specifies that the cavity is a cavity within a surface insulating material of the substrate.

[0217] Example A80 includes the subject matter of any of Examples A77-A79, and further provides that the substrate includes an organic dielectric material.

[0218] Example 81 includes the subject matter of any of Examples A77 to A80, and further specifies that the sixth conductive contact is located on a first surface of the bridge component, the bridge component includes a second surface opposite the first surface, a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate.

[0219] Example A82 includes the subject matter of any of Examples A64 to A81, and further specifies that the bridge component includes a molding material on a surface of the bridge component opposite a surface of the bridge component on which the sixth conductive contact is located.

[0220] Example A83 includes the subject matter of any of Examples A59-A82, and further includes an underfill material around the bridge component.

[0221] Example A84 includes the subject matter of any of Examples A59-A83, and further provides that the third conductive contact is on a surface of the substrate.

[0222] Example A85 includes the subject matter described in Example A84, and further provides that the substrate includes an organic dielectric material.

[0223] Example A86 includes the subject matter of any of Examples A84-A85, and further includes an underfill material between the substrate and the molding material.

[0224] Example A87 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly comprising the microelectronic assembly of any of Examples A1 to A86.

[0225] Example A88 includes the subject matter of Example A87, and further specifies that the electronic device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0226] Example A89 includes the subject matter of any of Examples A87 to A88, and further specifies that the circuit board is a motherboard.

[0227] Example A90 includes the subject matter of any of Examples A87-A89, and further includes a display communicatively coupled to the circuit board.

[0228] Example A91 includes the subject matter of Example A90, and further specifies that the display includes a touchscreen display.

[0229] Example A92 includes the subject matter of any of Examples A87-A91, and further includes a housing surrounding the circuit board and the microelectronic assembly.

[0230] Example B1 is a microelectronic assembly comprising a first microelectronic component, a second microelectronic component, a bridge component, and a substrate having a third conductive contact, wherein the first microelectronic component is bonded to a first side of the bridge component, the second microelectronic component is bonded to the first side of the bridge component, the bridge component has a second side opposite the first side, the bridge component has a first conductive contact on the second side, the bridge component is at least partially between the first microelectronic component and the substrate, the bridge component is at least partially between the second microelectronic component and the substrate, the first conductive contact is bonded to the second conductive contact by a first solder, the second conductive contact is bonded to the third conductive contact by a second solder, and the second conductive contact is between the first conductive contact and the third conductive contact.

[0231] Example B2 includes the subject matter of Example B1, and further specifies that the second conductive contact has a surface that is flush with a surface of the insulating material in which the second conductive contact is embedded.

[0232] Example B3 includes the subject matter of Example B2, further specifying that a fourth conductive contact of the first microelectronic component is coupled to a fifth conductive contact by a third solder, the fifth conductive contact is coupled to a sixth conductive contact by a fourth solder, the sixth conductive contact is a conductive contact of the substrate, the fifth conductive contact is between the fourth and sixth conductive contacts, and the sixth conductive contact is outside the footprint of the bridge component.

[0233] Example B4 includes the subject matter of Example B3, and further provides that the fifth conductive contact has a surface that is flush with a surface of the insulating material.

[0234] Example B5 includes the subject matter of any of Examples B3-B4, and further specifies that the insulating material is a first insulating material, and the microelectronic assembly further includes a second insulating material between the first insulating material and the first microelectronic component, the second insulating material being different from the first insulating material.

[0235] Example B6 includes the subject matter of Example B5, and further specifies that the first insulating material is a resist material and the second insulating material is a molding material.

[0236] Example B7 includes the subject matter of any of Examples B5-B6, further providing that the bridge component is at least partially within an opening in the first insulating material.

[0237] Example B8 includes the subject matter of any of Examples B3 to B7, and further specifies that the pitch of the fourth conductive contacts is greater than the pitch of the conductive contacts that couple the first microelectronic component to the bridge component.

[0238] Example B9 includes the subject matter of Example B8, and further specifies that the pitch of the fourth conductive contacts is greater than 50 microns.

[0239] Example B10 includes the subject matter of any of Examples B8-B9, further specifying that the pitch of the conductive contacts coupling the first microelectronic component to the bridge component is less than 30 microns.

[0240] Example B11 includes the subject matter of any of Examples B1-B10, and further specifies that the bridge component includes a transistor.

[0241] Example B12 includes the subject matter of any of Examples B1-B10, and further specifies that the bridge component does not include a transistor.

[0242] Example B13 includes the subject matter of any of Examples B1-B12, further providing that the third conductive contact contacts a surface insulating material different from the insulating material.

[0243] Example B14 includes the subject matter of any of Examples B1-B13, further including an underfill material between the substrate and the first microelectronic component, the underfill material being different from the insulating material.

[0244] Example B15 includes the subject matter of any of Examples B1 to B14, and further provides that the substrate includes an organic dielectric material.

[0245] Example B16 is a microelectronic assembly comprising: a microelectronic component having a first conductive contact and a second conductive contact; a bridge component having a third conductive contact on a surface of the bridge component, the first conductive contact being coupled to the third conductive contact by a first solder; and a substrate having a fifth conductive contact, the bridge component being at least partially between the microelectronic component and the substrate, the second conductive contact being coupled to the fourth conductive contact by a second solder, the fourth conductive contact being coupled to the fifth conductive contact by a third solder, and the fourth conductive contact being between the second and fifth conductive contacts.

[0246] Example B17 includes the subject matter of Example B16, and further specifies that the fourth conductive contact has a surface that is flush with a surface of the insulating material in which the fourth conductive contact is embedded.

[0247] Example B18 includes the subject matter of any of Examples B16-B17, further specifying that the surface of the bridge component is a first surface, the bridge component has a second surface opposite the first surface, a sixth conductive contact is on the second surface of the bridge component, a seventh conductive contact is on the surface of the substrate, and the sixth conductive contact is coupled to the seventh conductive contact by a fourth solder.

[0248] Example B19 includes the subject matter of any of Examples B16-B18, further providing that the seventh conductive contact is coplanar with the fifth conductive contact.

[0249] Example B20 includes the subject matter of any of Examples B16 to B19, and further specifies that the insulating material is a first insulating material, and the microelectronic assembly further includes a second insulating material between the first insulating material and the microelectronic component, the second insulating material being different from the first insulating material.

[0250] Example B21 includes the subject matter of Example B20, and further specifies that the first insulating material is a resist material and the second insulating material is a molding material.

[0251] Example B22 includes the subject matter of any of Examples B20-B21, further providing that the bridge component is at least partially within an opening in the first insulating material.

[0252] Example B23 includes the subject matter of any of Examples B16-B22, further specifying that the pitch of the second conductive contacts is greater than the pitch of the first conductive contacts.

[0253] Example B24 includes the subject matter of Example B23, and further specifies that the pitch of the second conductive contacts is greater than 50 microns.

[0254] Example B25 includes the subject matter of any of Examples B23-B24, further specifying that the pitch of the first conductive contacts is less than 30 microns.

[0255] Example B26 includes the subject matter of any of Examples B16 to B25, and further specifies that the bridge component includes a transistor.

[0256] Example B27 includes the subject matter of any of Examples B16 to B25, and further specifies that the bridge component does not include a transistor.

[0257] Example B28 includes the subject matter of any of Examples B16-B27, further providing that the fifth conductive contact contacts a surface insulating material different from the insulating material.

[0258] Example B29 includes the subject matter of any of Examples B16-B28, further including an underfill material between the substrate and the microelectronic component, the underfill material being different from the insulating material.

[0259] Example B30 includes the subject matter of any of Examples B16 to B29, and further provides that the substrate includes an organic dielectric material.

[0260] Example B31 is a microelectronic assembly comprising a microelectronic component having a first conductive contact, a bridge component having a second conductive contact, and a substrate, wherein the bridge component is coupled between the microelectronic component and the substrate, the first conductive contact is coupled to the substrate by two solder layers separated by an intervening conductive contact, and the second conductive contact is coupled to the substrate by two solder layers separated by an intervening conductive contact.

[0261] Example B32 includes the subject matter of Example B31, and further specifies that the upper microelectronic component has a third conductive contact coupled to the fourth conductive contact of the bridge component, the third conductive contact having a pitch that is less than the pitch of the first conductive contacts.

[0262] Example B33 includes the subject matter of any of Examples B31-B32, further specifying that the third conductive contacts have a pitch that is less than 30 microns.

[0263] Example B34 includes the subject matter of any of Examples B32-B33, further specifying that the first conductive contacts have a pitch greater than 50 microns.

[0264] Example B35 includes the subject matter of any of Examples B31 to B34, and further specifies that the microelectronic assembly has an insulating material between the microelectronic component and the substrate, and the insulating material is not between the bridge component and the substrate.

[0265] Example B36 includes the subject matter of Example B35, and further specifies that the insulating material is not between the bridge component and the microelectronic component.

[0266] Example B37 includes the subject matter of any of Examples B31-B36, further providing that the intervening conductive contacts are coplanar.

[0267] Example B38 includes the subject matter of any of Examples B31-B37, further providing that the conductive contacts of the substrate are coplanar.

[0268] Example B39 includes the subject matter of any of Examples B31 to B38, and further specifies that the bridge component includes a transistor.

[0269] Example B40 includes the subject matter of any of Examples B31 to B38, and further specifies that the bridge component does not include a transistor.

[0270] Example B41 includes the subject matter of any of Examples B31-B40, further providing that the third conductive contact contacts a surface insulating material different from the insulating material.

[0271] Example B42 includes the subject matter of any of Examples B31-B41, and further includes an underfill material between the substrate and the microelectronic component, the underfill material being different from the insulating material.

[0272] Example B43 includes the subject matter of any of Examples B31-B42, and further provides that the substrate includes an organic dielectric material.

[0273] Example B44 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly comprising the microelectronic assembly of any of Examples B1 to B43.

[0274] Example B45 includes the subject matter of Example B44, and further specifies that the electronic device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0275] Example B46 includes the subject matter of any of Examples B44 to B45, and further specifies that the circuit board is a motherboard.

[0276] Example B47 includes the subject matter of any of Examples B44-B46, and further includes a display communicatively coupled to the circuit board.

[0277] Example B48 includes the subject matter of Example B47, and further specifies that the display includes a touchscreen display.

[0278] Example B49 includes the subject matter of any of Examples B44 to B48, and further includes a housing surrounding the circuit board and the microelectronic assembly.

[0279] Example C1 is a microelectronic assembly comprising a substrate and a microelectronic component coupled to the substrate by a solder interconnect, the solder interconnect including a first portion and a second portion, the first portion being between the second portion and the substrate, and the first portion including a ground top surface.

[0280] Example C2 includes the subject matter of Example C1, and further specifies that the first portion has a height between 20 microns and 50 microns.

[0281] Example C3 includes the subject matter of any of Examples C1-C2, and further includes a bridge component, wherein the microelectronic component is coupled to the bridge component by solder, the bridge component is coupled to the substrate by solder, and the bridge component is at least partially between the substrate and the microelectronic component.

[0282] Example C4 includes the subject matter of Example C3, further specifying that the microelectronic component is a first microelectronic component, the solder interconnect is a first solder interconnect, and the microelectronic assembly further includes a second microelectronic component coupled to the substrate by a second solder interconnect, the second solder interconnect having a first portion and a second portion, the first portion of the second solder interconnect being between the second portion of the second solder interconnect and the substrate, the first portion of the second solder interconnect including a ground top surface, the second microelectronic component coupled to the bridge component by solder, and the bridge component being at least partially between the substrate and the second microelectronic component.

[0283] Example C5 includes the subject matter of Example C4, and further specifies that the first portion of the second solder interconnect has a height between 20 microns and 50 microns.

[0284] Example C6 includes the subject matter of any of Examples C3-C5, and further specifies that the bridge component includes a transistor.

[0285] Example C7 includes the subject matter of any of Examples C3 to C5, and further specifies that the bridge component does not include a transistor.

[0286] Example C8 includes the subject matter of any of Examples C3-C7, further providing that the bridge component is at least partially within a cavity in the substrate.

[0287] Example C9 includes the subject matter of any of Examples C3 to C8, further providing that the top surface of the bridge component is flush with the ground top surface of the first portion of the solder interconnect.

[0288] Example C10 includes the subject matter of any of Examples C3 to C8, and further specifies that the top surface of the bridge component is not flush with the ground top surface of the first portion of the solder interconnect.

[0289] Example C11 includes the subject matter of any of Examples C1 through C10, and further provides that the substrate comprises an organic dielectric material.

[0290] Example C12 is a microelectronic assembly comprising a substrate and a microelectronic component coupled to the substrate by solder interconnects, each solder interconnect including a first portion and a second portion, and an interface between the first portion and the second portion being coplanar across the solder interconnects.

[0291] Example C13 includes the subject matter of Example C12, and further specifies that the first portion has a height between 20 microns and 50 microns.

[0292] Example C14 includes the subject matter of any of Examples C12-C13, and further includes a bridge component, wherein the microelectronic component is coupled to the bridge component by solder, the bridge component is coupled to the substrate by solder, and the bridge component is at least partially between the substrate and the microelectronic component.

[0293] Example C15 includes the subject matter of Example C14, further specifying that the microelectronic component is a first microelectronic component, the solder interconnect is a first solder interconnect, and the microelectronic assembly further includes a second microelectronic component coupled to the substrate by a second solder interconnect, the second solder interconnect including a first portion and a second portion, the first portion of the second solder interconnect being between the second portion of the second solder interconnect and the substrate, the first portion of the second solder interconnect including a ground top surface, the second microelectronic component coupled to the bridge component by solder, and the bridge component being at least partially between the substrate and the second microelectronic component.

[0294] Example C16 includes the subject matter of Example C15, further specifying that the first portion of the second solder interconnect has a height between 20 microns and 50 microns.

[0295] Example C17 includes the subject matter of any of Examples C14 to C16, and further specifies that the bridge component includes a transistor.

[0296] Example C18 includes the subject matter of any of Examples C14 to C16, and further specifies that the bridge component does not include a transistor.

[0297] Example C19 includes the subject matter of any of Examples C14-C18, further providing that the bridge component is at least partially within a cavity in the substrate.

[0298] Example C20 includes the subject matter of any of Examples C14-C19, further specifying that a top surface of the bridge component is flush with the interface between the first portion and the second portion.

[0299] Example C21 includes the subject matter of any of Examples C14 to C19, and further specifies that the top surface of the bridge component is not flush with the interface between the first portion and the second portion.

[0300] Example C22 includes the subject matter of any of Examples C12-C21, and further provides that the substrate includes an organic dielectric material.

[0301] Example C23 is a microelectronic assembly comprising a substrate and a microelectronic component coupled to the substrate by an interconnect, the interconnect including a first portion and a second portion, the first portion being between the second portion and the substrate, the first portion including solder, and the first portion including a ground top surface.

[0302] Example C24 includes the subject matter of Example C23, and further specifies that the first portion has a height between 20 microns and 50 microns.

[0303] Example C25 includes the subject matter of any of Examples C23-C24, and further includes a bridge component, wherein the microelectronic component is coupled to the bridge component by solder, the bridge component is coupled to the substrate by solder, and the bridge component is at least partially between the substrate and the microelectronic component.

[0304] Example C26 includes the subject matter of Example C25, further specifying that the microelectronic component is a first microelectronic component, the interconnect is a first interconnect, and the microelectronic assembly further includes a second microelectronic component coupled to the substrate by a second interconnect, the second interconnect including a first portion and a second portion, the first portion of the second interconnect including solder, the first portion of the second interconnect being between the second portion of the second interconnect and the substrate, the first portion of the second interconnect including a ground top surface, the second microelectronic component coupled to the bridge component by solder, and the bridge component being at least partially between the substrate and the second microelectronic component.

[0305] Example C27 includes the subject matter of Example C26, and further specifies that the first portion of the second interconnect has a height between 20 microns and 50 microns.

[0306] Example C28 includes the subject matter of any of Examples C25-C27, and further specifies that the bridge component includes a transistor.

[0307] Example C29 includes the subject matter of any of Examples C25-C27, and further specifies that the bridge component does not include a transistor.

[0308] Example C30 includes the subject matter of any of Examples C25-C29, further providing that the bridge component is at least partially within a cavity in the substrate.

[0309] Example C31 includes the subject matter of any of Examples C25 to C30, further specifying that the top surface of the bridge component is flush with the ground top surface of the first portion of the interconnect.

[0310] Example C32 includes the subject matter of any of Examples C25 to C30, further specifying that the top surface of the bridge component is not flush with the ground top surface of the first portion of the interconnect.

[0311] Example C33 includes the subject matter of any of Examples C23-C32, and further provides that the substrate includes an organic dielectric material.

[0312] Example C34 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly comprising the microelectronic assembly of any of Examples C1 to C33.

[0313] Example C35 includes the subject matter of Example C34, and further specifies that the electronic device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0314] Example C36 includes the subject matter of any of Examples C34 to C35, and further specifies that the circuit board is a motherboard.

[0315] Example C37 includes the subject matter of any of Examples C34-C36, and further includes a display communicatively coupled to the circuit board.

[0316] Example C38 includes the subject matter of Example C37, and further specifies that the display includes a touchscreen display.

[0317] Example C39 includes the subject matter of any of Examples C34-C38, and further includes a housing surrounding the circuit board and the microelectronic assembly.

[0318] Example D1 is a microelectronic assembly comprising: a substrate having a first conductive contact; a bridge component having a second conductive contact on a first surface of the bridge component and a third conductive contact on a second opposing surface of the bridge component, the first conductive contact being coupled to the second conductive contact by a first solder that contacts sides of the first and second conductive contacts; and a microelectronic component having a fourth conductive contact that is coupled to the fourth conductive contact by a second solder that contacts the fourth conductive contact.

[0319] Example D2 includes the subject matter of Example D1, and further specifies that the second solder does not contact solder that couples another conductive contact on the second side of the bridge component to another conductive contact of the microelectronic component.

[0320] Example D3 includes the subject matter of any of Examples D1-D2, further providing that the diameter of the fourth conductive contact is different from the diameter of the third conductive contact.

[0321] Example D4 includes the subject matter of Example D3, and further specifies that the diameter of one of the third conductive contact and the fourth conductive contact is less than 60% of the diameter of the other of the third conductive contact and the fourth conductive contact.

[0322] Example D5 includes the subject matter of any of Examples D3 to D4, and further specifies that the diameter of one of the third conductive contact and the fourth conductive contact is less than 50 times the diameter of the other of the third conductive contact and the fourth conductive contact.

[0323] Example D6 includes the subject matter of any of Examples D1-D5, further specifying that the diameter of the third conductive contact or the diameter of the fourth conductive contact is less than 30 microns.

[0324] Example D7 includes the subject matter of any of Examples D1-D6, further providing that the second solder contacts a side of the fourth conductive contact.

[0325] Example D8 includes the subject matter of any of Examples D1 to D7, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 50 microns.

[0326] Example D9 includes the subject matter of any of Examples D1 to D8, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 30 microns.

[0327] Example D10 includes the subject matter of any of Examples D1-D9, further providing that the center of the first conductive contact is not aligned with the center of the second conductive contact.

[0328] Example D11 includes the subject matter of any of Examples D1 to D10, and further specifies that the first conductive contact is one of a plurality of first conductive contacts having a pitch greater than 50 microns.

[0329] Example D12 includes the subject matter of any of Examples D1-D11, and further specifies that the bridge component includes a transistor.

[0330] Example D13 includes the subject matter of any of Examples D1-D11, and further specifies that the bridge component does not include a transistor.

[0331] Example D14 includes the subject matter of any of Examples D1-D13, and further provides that the substrate comprises an organic dielectric material.

[0332] Example D15 includes the subject matter of any of Examples D1 to D14, and further provides that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the bridge component is at least partially between the second microelectronic component and the substrate.

[0333] Example D16 is a microelectronic assembly comprising: a substrate having a first conductive contact; a bridge component having a second conductive contact on a first surface of the bridge component and a third conductive contact on a second opposing surface of the bridge component, the first conductive contact being coupled to the second conductive contact by a first solder that contacts sides of the first and second conductive contacts; and a microelectronic component having a fourth conductive contact, the third conductive contact being coupled to the fourth conductive contact by a second solder.

[0334] Example D17 includes the subject matter of Example D16, and further specifies that the diameter of the fourth conductive contact is less than the diameter of the third conductive contact.

[0335] Example D18 includes the subject matter of Example D17, further specifying that the diameter of the fourth conductive contact is less than 60% of the diameter of the third conductive contact.

[0336] Example D19 includes the subject matter of any of Examples D17-D18, further specifying that the diameter of the fourth conductive contact is less than 50% of the diameter of the third conductive contact.

[0337] Example D20 includes the subject matter of any of Examples D17-D19, further specifying that the diameter of the fourth conductive contact is less than 30 microns.

[0338] Example D21 includes the subject matter of any of Examples D16-D20, and further provides that the second solder contacts a side of the fourth conductive contact.

[0339] Example D22 includes the subject matter of any of Examples D16 to D21, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 50 microns.

[0340] Example D23 includes the subject matter of any of Examples D16 to D22, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 30 microns.

[0341] Example D24 includes the subject matter of any of Examples D16-D23, and further provides that the center of the first conductive contact is not aligned with the center of the second conductive contact.

[0342] Example D25 includes the subject matter of any of Examples D16 to D24, and further specifies that the first conductive contact is one of a plurality of first conductive contacts having a pitch greater than 50 microns.

[0343] Example D26 includes the subject matter of any of Examples D16 to D25, and further specifies that the bridge component includes a transistor.

[0344] Example D27 includes the subject matter of any of Examples D16 to D25, and further specifies that the bridge component does not include a transistor.

[0345] Example D28 includes the subject matter of any of Examples D16 to D27, and further provides that the substrate includes an organic dielectric material.

[0346] Example D29 includes the subject matter of any of Examples D16 to D28, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the bridge component is at least partially between the second microelectronic component and the substrate.

[0347] Example D30 is a microelectronic assembly comprising: a substrate having a first conductive contact; a bridge component having a second conductive contact on a first side of the bridge component and a third conductive contact on a second opposing side of the bridge component, the first conductive contact being coupled to the second conductive contact by a first solder; and a microelectronic component having a fourth conductive contact, the third conductive contact being coupled to the fourth conductive contact by a second solder, the fourth conductive contact having a diameter different from the diameter of the third conductive contact.

[0348] Example D31 includes the subject matter of Example D30, and further specifies that the diameter of one of the third conductive contact and the fourth conductive contact is less than 60% of the diameter of the other of the third conductive contact and the fourth conductive contact.

[0349] Example D32 includes the subject matter of any of Examples D30 to D31, and further specifies that the diameter of one of the third conductive contact and the fourth conductive contact is less than 50 times the diameter of the other of the third conductive contact and the fourth conductive contact.

[0350] Example D33 includes the subject matter of any of Examples D30 to D32, further specifying that the diameter of the third conductive contact or the diameter of the fourth conductive contact is less than 30 microns.

[0351] Example D34 includes the subject matter of any of Examples D30-D33, and further provides that the second solder contacts a side of the fourth conductive contact.

[0352] Example D35 includes the subject matter of any of Examples D30 to D34, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 50 microns.

[0353] Example D36 includes the subject matter of any of Examples D30 to D35, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 30 microns.

[0354] Example D37 includes the subject matter of any of Examples D30 to D36, and further provides that the first solder contacts sides of the first conductive contact and the second conductive contact.

[0355] Example D38 includes the subject matter of any of Examples D30-D37, further providing that the center of the first conductive contact is not aligned with the center of the second conductive contact.

[0356] Example D39 includes the subject matter of any of Examples D30 to D38, and further specifies that the first conductive contact is one of a plurality of first conductive contacts having a pitch greater than 50 microns.

[0357] Example D40 includes the subject matter of any of Examples D30 to D39, and further specifies that the bridge component includes a transistor.

[0358] Example D41 includes the subject matter of any of Examples D30 to D39, and further specifies that the bridge component does not include a transistor.

[0359] Example D42 includes the subject matter of any of Examples D30 to D41, and further provides that the substrate includes an organic dielectric material.

[0360] Example D43 includes the subject matter of any of Examples D30 to D42, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the bridge component is at least partially between the second microelectronic component and the substrate.

[0361] Example D44 is a microelectronic assembly comprising: a substrate having a first conductive contact; a bridge component having a second conductive contact on a first side of the bridge component and a third conductive contact on a second, opposing side of the bridge component, the first conductive contact being coupled to the second conductive contact by a first solder; and a microelectronic component having a fourth conductive contact, the third conductive contact being coupled to the fourth conductive contact by a second solder and in contact with the fourth conductive contact, the second solder not in contact with a solder coupling another conductive contact on the second side of the bridge component to another conductive contact of the microelectronic component.

[0362] Example D45 includes the subject matter of Example D44, and further provides that the second solder contacts a side of the fourth conductive contact.

[0363] Example D46 includes the subject matter of any of Examples D44 to D45, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 50 microns.

[0364] Example D47 includes the subject matter of any of Examples D44 to D46, and further specifies that the fourth conductive contact is one of a plurality of fourth conductive contacts having a pitch that is less than 30 microns.

[0365] Example D48 includes the subject matter of any of Examples D44 to D47, and further provides that the first solder contacts sides of the first conductive contact and the second conductive contact.

[0366] Example D49 includes the subject matter of any of Examples D44 to D48, further providing that the center of the first conductive contact is not aligned with the center of the second conductive contact.

[0367] Example D50 includes the subject matter of any of Examples D44 to D49, and further specifies that the first conductive contact is one of a plurality of first conductive contacts having a pitch greater than 50 microns.

[0368] Example D51 includes the subject matter of any of Examples D44 to D50, and further specifies that the bridge component includes a transistor.

[0369] Example D52 includes the subject matter of any of Examples D44 to D50, and further specifies that the bridge component does not include a transistor.

[0370] Example D53 includes the subject matter of any of Examples D44 to D52, and further provides that the substrate includes an organic dielectric material.

[0371] Example D54 includes the subject matter of any of Examples D44 to D53, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the bridge component is at least partially between the second microelectronic component and the substrate.

[0372] Example D55 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly comprising the microelectronic assembly of any of Examples D1 to D54.

[0373] Example D56 includes the subject matter of Example D55, and further specifies that the electronic device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0374] Example D57 includes the subject matter of any of Examples D55 to D56, and further specifies that the circuit board is a motherboard.

[0375] Example D58 includes the subject matter of any of Examples D55-D57, and further includes a display communicatively coupled to the circuit board.

[0376] Example D59 includes the subject matter of Example D58, and further provides that the display includes a touchscreen display.

[0377] Example D60 includes the subject matter of any of Examples D55 to D59, and further includes a housing surrounding the circuit board and the microelectronic assembly.

[0378] Example E1 is a microelectronic assembly comprising a microelectronic component, a substrate, and a patch structure coupled between the microelectronic component and the substrate, the patch structure having an embedded bridge component, the patch structure having a stack of conductive pillars, the diameter of the conductive pillars increasing in a direction from the substrate to the microelectronic component.

[0379] Example E2 includes the subject matter of Example E1, and further specifies that the patch structure is coupled to the microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0380] Example E3 includes the subject matter of Example E2, and further specifies that the first interconnect is a volume between the bridge component and the microelectronic component.

[0381] Example E4 includes the subject matter of any of Examples E1 to E3, and further specifies that the patch structure includes a first surface and an opposing second surface, the second surface being between the first surface and the microelectronic component, and the patch structure includes solder between the bridge component and the second surface.

[0382] Example E5 includes the subject matter of any of Examples E1 to E4, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the patch structure is coupled between the second microelectronic component and the substrate.

[0383] Example E6 includes the subject matter described in Example E5, and further specifies that the patch structure is coupled to the second microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0384] Example E7 includes the subject matter of Example E6, and further specifies that the first interconnect is a volume between the bridge component and the second microelectronic component.

[0385] Example E8 includes the subject matter of any of Examples E1-E7, and further specifies that the bridge component includes a transistor.

[0386] Example E9 includes the subject matter of any of Examples E1-E7, and further specifies that the bridge component does not include a transistor.

[0387] Example E10 includes the subject matter of any of examples E1-E9, and further provides that the substrate comprises an organic dielectric material.

[0388] Example E11 is a microelectronic assembly comprising a microelectronic component, a substrate, and a patch structure coupled between the microelectronic component and the substrate, the patch structure having an embedded bridge component, the patch structure having a first surface and an opposing second surface, the second surface being between the first surface and the microelectronic component, and the patch structure having solder between the bridge component and the second surface.

[0389] Example E12 includes the subject matter of Example E11, and further specifies that the patch structure is coupled to the microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0390] Example E13 includes the subject matter of Example E12, and further specifies that the first interconnect is a volume between the bridge component and the microelectronic component.

[0391] Example E14 includes the subject matter of any of Examples E11 to E13, and further specifies that the patch structure has a stack of conductive pillars, the diameter of the conductive pillars increasing in a direction from the substrate to the microelectronic component.

[0392] Example E15 includes the subject matter of any of Examples E11 to E14, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the patch structure is coupled between the second microelectronic component and the substrate.

[0393] Example E16 includes the subject matter of Example E15, and further specifies that the patch structure is coupled to the second microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0394] Example E17 includes the subject matter of example E16, and further specifies that the first interconnect is a volume between the bridge component and the second microelectronic component.

[0395] Example E18 includes the subject matter of any of examples E11-E17, and further provides that the bridge component includes a transistor.

[0396] Example E19 includes the subject matter of any of Examples E11-E17, and further specifies that the bridge component does not include a transistor.

[0397] Example E20 includes the subject matter of any of examples E11-E19, and further provides that the substrate includes an organic dielectric material.

[0398] Example E21 is a microelectronic assembly comprising a microelectronic component, a substrate, and a patch structure coupled between the microelectronic component and the substrate, the patch structure having a first surface and an opposing second surface, the second surface being between the first surface and the microelectronic component, the patch structure having an embedded bridge component, and the patch structure having conductive pillars, the diameter of the conductive pillars proximate the first surface being less than the diameter of the conductive pillars proximate the second surface.

[0399] Example E22 includes the subject matter described in Example E21, and further specifies that the patch structure is coupled to the microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0400] Example E23 includes the subject matter of example E22, and further specifies that the first interconnect is a volume between the bridge component and the microelectronic component.

[0401] Example E24 includes the subject matter of any of Examples E21-E23, further providing that the patch structure includes solder between the bridge component and the second surface.

[0402] Example E25 includes the subject matter of any of Examples E21 to E24, and further specifies that the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the patch structure is coupled between the second microelectronic component and the substrate.

[0403] Example E26 includes the subject matter described in Example E25, and further specifies that the patch structure is coupled to the second microelectronic component by a first interconnect having a first pitch and a second interconnect having a second pitch, and the first pitch is less than the second pitch.

[0404] Example E27 includes the subject matter of example E26, and further specifies that the first interconnect is a volume between the bridge component and the second microelectronic component.

[0405] Example E28 includes the subject matter of any of examples E21-E27, and further provides that the bridge component includes a transistor.

[0406] Example E29 includes the subject matter of any of examples E21-E27, and further specifies that the bridge component does not include a transistor.

[0407] Example E30 includes the subject matter of any of examples E21-E29, and further provides that the substrate includes an organic dielectric material.

[0408] Example E31 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly comprising the microelectronic assembly of any of examples E1 to E30.

[0409] Example E32 includes the subject matter of example E31, and further specifies that the electronic device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0410] Example E33 includes the subject matter of any of Examples E31-E32, and further specifies that the circuit board is a motherboard.

[0411] Example E34 includes the subject matter of any of examples E31-E33, and further includes a display communicatively coupled to the circuit board.

[0412] Example E35 includes the subject matter of example E34, and further provides that the display includes a touchscreen display.

[0413] Example E36 includes the subject matter of any of Examples E31-E35, and further includes a housing surrounding the circuit board and the microelectronic assembly.

[0414] Example F1 is a method of manufacturing a microelectronic structure, including any of the methods disclosed herein.

[0415] Example F2 is a method of manufacturing a microelectronic assembly, including any of the methods disclosed herein. [Other possible items] (Item 1) a microelectronic component having a first conductive contact; a second conductive contact coupled to the first conductive contact by a first solder, the first solder embedded in a molding material, the molding material extending around a side of the microelectronic component; and a third conductive contact coupled to the second conductive contact by a second solder, the second solder and the third conductive contact being outside the molding material; and A microelectronic assembly comprising: (Item 2) the first conductive contact is one of a plurality of first conductive contacts; the second conductive contact is one of a plurality of second conductive contacts; the first solder is one of a plurality of first solders; each of the second conductive contacts is coupled to each of the first conductive contacts by a respective one of the first solders; the first solder is embedded in the molding material; the third conductive contact is one of a plurality of third conductive contacts; the second solder is one of a plurality of second solders; each of the third conductive contacts is coupled to each of the second conductive contacts by a respective second solder; the second solder and the third conductive contact are outside the molding material; Item 1. The microelectronic assembly of item 1. (Item 3) the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts; a plurality of fifth conductive contacts each coupled to a respective one of the fourth conductive contacts by a plurality of third solders each embedded in the molding material; a plurality of sixth conductive contacts are coupled to the fifth conductive contacts by a plurality of fourth solders, respectively, the fourth solders and the sixth conductive contacts being outside the molding material; the fourth conductive contacts have a pitch that is less than the pitch of the first conductive contacts; Item 3. The microelectronic assembly according to item 2. (Item 4) Item 4. The microelectronic assembly of item 3, wherein the sixth conductive contact is a conductive contact of a bridge component. (Item 5) The microelectronic component is a first microelectronic component, and the microelectronic assembly comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to the seventh conductive contacts by a plurality of fifth solders, the fifth solders being embedded in the molding material, the molding material extending around a side of the second microelectronic component; a plurality of ninth conductive contacts coupled to the eighth conductive contacts by respective sixth solders, the sixth solders and the ninth conductive contacts being outside the molding material; Furthermore, the sixth conductive contact is located on a face of the bridge component; the ninth conductive contact is a conductive contact of the bridge component and is located on the face of the bridge component; Item 5. The microelectronic assembly according to item 4. (Item 6) the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the seventh conductive contacts; a plurality of eleventh conductive contacts each coupled to the tenth conductive contact by a plurality of seventh solders each embedded in the molding material; a plurality of twelfth conductive contacts each coupled to the eleventh conductive contact by a plurality of eighth solders, the eighth solders and the twelfth conductive contacts being outside the molding material; the tenth conductive contact has a pitch greater than the pitch of the seventh conductive contact; Item 6. The microelectronic assembly according to item 5. (Item 7) Item 7. The microelectronic assembly of item 6, wherein the twelfth conductive contact and the third conductive contact are on a surface of a substrate. (Item 8) Item 8. The microelectronic assembly of item 7, wherein the bridge component extends into a cavity in the substrate. (Item 9) 8. The microelectronic assembly of claim 7, wherein the substrate comprises an organic dielectric material. (Item 10) a microelectronic component having a first conductive contact; a second conductive contact coupled to the first conductive contact by a first solder, the first solder being embedded in a molding material; and a third conductive contact coupled to the second conductive contact by a second solder, the second solder being outside the molding material; and A microelectronic assembly comprising: (Item 11) Item 11. The microelectronic assembly of item 10, wherein the third conductive contact is on a surface of the substrate. (Item 12) Item 12. The microelectronic assembly of item 11, wherein the substrate comprises an organic dielectric material. (Item 13) an underfill material between the substrate and the molding material; Item 12. The microelectronic assembly of item 11, further comprising: (Item 14) a microelectronic component having a plurality of first conductive contacts; a respective one of a plurality of second conductive contacts coupled to a respective one of the first conductive contacts by a respective one of a plurality of first solders, the first solders being embedded in a molding material; and a plurality of third conductive contacts coupled to the second conductive contacts by respective second solders; a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts; and a plurality of fifth conductive contacts coupled to the fourth conductive contacts by a plurality of third solders, respectively, the third solders being embedded in the molding material; each of a plurality of sixth conductive contacts coupled to each of the fifth conductive contacts by a respective one of a plurality of fourth solders, the sixth conductive contacts being conductive contacts of a bridge component; A microelectronic assembly comprising: (Item 15) Item 15. The microelectronic assembly of item 14, wherein the fourth conductive contacts have a pitch that is less than the pitch of the first conductive contacts. (Item 16) the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts; a plurality of fifth conductive contacts each coupled to a respective one of the fourth conductive contacts by a plurality of third solders each embedded in the molding material; a plurality of sixth conductive contacts are coupled to the fifth conductive contacts by a plurality of fourth solders, respectively, the fourth solders and the sixth conductive contacts being outside the molding material; the fourth conductive contacts have a pitch that is less than the pitch of the first conductive contacts; Item 15. The microelectronic assembly according to item 14. (Item 17) The microelectronic component is a first microelectronic component, and the microelectronic assembly comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to the seventh conductive contacts by a plurality of fifth solders, the fifth solders being embedded in the molding material, the molding material extending around a side of the second microelectronic component; a plurality of ninth conductive contacts coupled to the eighth conductive contacts by respective sixth solders, the sixth solders and the ninth conductive contacts being outside the molding material; Furthermore, the sixth conductive contact is located on a face of the bridge component; the ninth conductive contact is a conductive contact of the bridge component and is located on the face of the bridge component; Item 17. A microelectronic assembly according to item 16. (Item 18) the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the seventh conductive contacts; a plurality of eleventh conductive contacts each coupled to the tenth conductive contact by a plurality of seventh solders each embedded in the molding material; a plurality of twelfth conductive contacts each coupled to the eleventh conductive contact by a plurality of eighth solders, the eighth solders and the twelfth conductive contacts being outside the molding material; the tenth conductive contact has a pitch greater than the pitch of the seventh conductive contact; Item 18. The microelectronic assembly according to item 17. (Item 19) Item 19. The microelectronic assembly of item 18, wherein the sixth conductive contact is located on a first surface of the bridge component, the bridge component including a second surface opposite the first surface, and a plurality of thirteen conductive contacts are located on the second surface of the bridge component, and each of the thirteen conductive contacts is coupled to a respective one of a plurality of fifteen conductive contacts of a substrate. (Item 20) Item 19. The microelectronic assembly of item 18, wherein the bridge component includes a molding material on a face of the bridge component opposite a face of the bridge component on which the sixth conductive contact is located.

Claims

1. a microelectronic component having a first conductive contact; a second conductive contact coupled to the first conductive contact by a first solder, the first solder being embedded in a molding material, the molding material extending around a side of the microelectronic component; a third conductive contact coupled to the second conductive contact by a second solder, the second solder and the third conductive contact being outside the molding material; and a plurality of fourth conductive contacts on the same side of the microelectronic component as the first conductive contacts; and Equipped with a plurality of fifth conductive contacts are coupled to a respective one of the plurality of fourth conductive contacts by a respective one of a plurality of third solders, the plurality of third solders being embedded in the molding material; each of a plurality of sixth conductive contacts is coupled to a respective one of the plurality of fifth conductive contacts by a respective one of a plurality of fourth solders, the plurality of fourth solders and the plurality of sixth conductive contacts being outside the molding material; the plurality of sixth conductive contacts are conductive contacts of a bridge component; the bridge component is mounted on a substrate; the third conductive contact is on a surface of the substrate; Microelectronic assembly.

2. A microelectronic assembly as described in claim 1, wherein the bridge component extends into a cavity in the substrate.

3. A microelectronic assembly as described in claim 2, wherein the cavity is a cavity within a surface insulating material of the substrate.

4. A microelectronic assembly as described in claim 3, wherein a portion of the second solder on the substrate side and the third conductive contact are embedded in the surface insulating material.

5. A microelectronic assembly as described in claim 3 or 4, wherein the surface insulating material has a tapered shape that narrows toward the bottom of the substrate.

6. the first conductive contact is one of a plurality of first conductive contacts; the second conductive contact is one of a plurality of second conductive contacts; the first solder is one of a plurality of first solders; each of the plurality of second conductive contacts is coupled to each of the plurality of first conductive contacts by a respective one of the plurality of first solders; the plurality of first solders are embedded in the molding material; the third conductive contact is one of a plurality of third conductive contacts, the plurality of third conductive contacts being on the surface of the substrate; the second solder is one of a plurality of second solders; each of the plurality of third conductive contacts is coupled to a respective one of the second conductive contacts by a respective one of the plurality of second solders; the plurality of second solders and the plurality of third conductive contacts are outside the molding material. A microelectronic assembly according to any one of claims 1 to 5.

7. The plurality of fourth conductive contacts have a pitch that is less than the pitch of the first conductive contacts. A microelectronic assembly according to any one of claims 1 to 6.

8. The microelectronic component is a first microelectronic component, and the microelectronic assembly comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to the plurality of seventh conductive contacts by a respective plurality of fifth solders, the plurality of fifth solders being embedded in the molding material, the molding material extending around a side of the second microelectronic component; a plurality of ninth conductive contacts coupled to the plurality of eighth conductive contacts by respective sixth solders, the plurality of sixth solders and the plurality of ninth conductive contacts being outside the molding material; Furthermore, the sixth plurality of conductive contacts are located on a face of the bridge component; the plurality of ninth conductive contacts are conductive contacts of the bridge component and are located on the face of the bridge component; A microelectronic assembly according to any one of claims 1 to 7.

9. the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the plurality of seventh conductive contacts; a plurality of eleventh conductive contacts each coupled to a respective one of the plurality of tenth conductive contacts by a respective one of a plurality of seventh solders, the seventh solders being embedded in the molding material; each of a plurality of twelfth conductive contacts is coupled to a respective one of the plurality of eleventh conductive contacts by a respective one of a plurality of eighth solders, the plurality of eighth solders and the plurality of twelfth conductive contacts being outside the molding material; the plurality of tenth conductive contacts have a pitch greater than the pitch of the plurality of seventh conductive contacts; 9. The microelectronic assembly of claim 8.

10. The microelectronic assembly of claim 9 , wherein the plurality of twelfth conductive contacts are on the face of the substrate.

11. 11. A microelectronic assembly according to any one of claims 1 to 10, wherein the substrate comprises an organic dielectric material.

12. a microelectronic component having a plurality of first conductive contacts; each of a plurality of second conductive contacts coupled to each of the plurality of first conductive contacts by a respective one of a plurality of first solders, the plurality of first solders being embedded in a molding material; a plurality of third conductive contacts coupled to the plurality of second conductive contacts by respective second solders; a plurality of fourth conductive contacts on the same side of the microelectronic component as the plurality of first conductive contacts; and a plurality of fifth conductive contacts coupled to the plurality of fourth conductive contacts by a respective plurality of third solders, the plurality of third solders being embedded in the molding material; each of a plurality of sixth conductive contacts coupled to each of the plurality of fifth conductive contacts by a respective one of a plurality of fourth solders, the sixth conductive contacts being conductive contacts of a bridge component; Equipped with the bridge component is mounted on a substrate; the plurality of third conductive contacts are on a surface of the substrate; Microelectronic assembly.

13. The microelectronic assembly of claim 12 , wherein the plurality of fourth conductive contacts has a pitch that is less than the pitch of the plurality of first conductive contacts.

14. the microelectronic component has a plurality of fourth conductive contacts on the same side of the microelectronic component as the plurality of first conductive contacts; a plurality of fifth conductive contacts are coupled to a respective one of the plurality of fourth conductive contacts by a respective one of a plurality of third solders, the plurality of third solders being embedded in the molding material; each of a plurality of sixth conductive contacts is coupled to a respective one of the plurality of fifth conductive contacts by a respective one of a plurality of fourth solders, the plurality of fourth solders and the plurality of sixth conductive contacts being outside the molding material; the plurality of fourth conductive contacts having a pitch that is less than the pitch of the plurality of first conductive contacts; 14. A microelectronic assembly according to claim 12 or 13.

15. The microelectronic component is a first microelectronic component, and the microelectronic assembly comprises: a second microelectronic component having a plurality of seventh conductive contacts; a plurality of eighth conductive contacts coupled to the plurality of seventh conductive contacts by a respective plurality of fifth solders, the plurality of fifth solders being embedded in the molding material, the molding material extending around a side of the second microelectronic component; a plurality of ninth conductive contacts coupled to the plurality of eighth conductive contacts by respective sixth solders, the plurality of sixth solders and the plurality of ninth conductive contacts being outside the molding material; Furthermore, the sixth plurality of conductive contacts are located on a face of the bridge component; the plurality of ninth conductive contacts are conductive contacts of the bridge component and are located on the face of the bridge component; 15. The microelectronic assembly of claim 14.

16. the second microelectronic component has a plurality of tenth conductive contacts on the same side of the microelectronic component as the plurality of seventh conductive contacts; a plurality of eleventh conductive contacts each coupled to a respective one of the plurality of tenth conductive contacts by a respective one of a plurality of seventh solders, the seventh solders being embedded in the molding material; each of a plurality of twelfth conductive contacts is coupled to a respective one of the plurality of eleventh conductive contacts by a respective one of a plurality of eighth solders, the plurality of eighth solders and the plurality of twelfth conductive contacts being outside the molding material; the plurality of tenth conductive contacts have a pitch greater than the pitch of the plurality of seventh conductive contacts; 16. The microelectronic assembly of claim 15.

17. 17. The microelectronic assembly of claim 16, wherein the sixth plurality of conductive contacts are located on a first surface of the bridge component, the bridge component including a second surface opposite the first surface, and a thirteenth plurality of conductive contacts are located on the second surface of the bridge component, each of the thirteenth plurality of conductive contacts being coupled to a respective one of a fifteenth plurality of conductive contacts of a substrate.

18. 18. The microelectronic assembly of claim 16 or 17, wherein the bridge component includes a molding material on a face of the bridge component opposite a face of the bridge component on which the plurality of sixth conductive contacts are located.

19. A microelectronic assembly as described in any one of claims 12 to 18, wherein the bridge component extends into a cavity in the substrate.

20. The microelectronic assembly of claim 19, wherein the cavity is a cavity within a surface insulating material of the substrate.

21. A microelectronic assembly as described in Claim 20, wherein a portion of the substrate side of each of the plurality of third conductive contacts and the plurality of second solders is embedded in the surface insulating material.

22. A microelectronic assembly as described in claim 20 or 21, wherein the surface insulating material has a tapered shape that narrows toward the bottom of the substrate.

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