Electrode member for plasma processing apparatus and plasma processing apparatus

Abstract

To provide a mounting table that has good thermal conductivity, has a low liner expansion coefficient and has lightweight.SOLUTION: A mounting table comprises: a first member that is made of a material having density being less than or equal to 5.0 g / cm3; a second member that is joined to the first member through a joint surface, has a liner expansion coefficient being less than or equal to 5.0×10-6 / K, and is made of a material having thermal conductivity being more than or equal to 100 W / mK; and a temperature control medium flow channel that is formed within the first member and the second member by striding over the first member and the second member. In the mounting table, the joint surface is formed while changing a combination ratio between the first member and the second member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure provides: Electrode member for plasma processing equipment and plasma Regarding the processing device. [Background technology]

[0002] For example, Patent Document 1 discloses a mounting table having a base and an electrostatic chuck. The base is made of, for example, aluminum or titanium. A cooling channel is formed inside the base. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-201086 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides: Lower electrode member for plasma processing apparatus formed from different materials and plasma processing apparatus to provide. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, An electrode member for a plasma processing apparatus provided on a mounting table, the electrode member for a plasma processing apparatus comprising: silicon; and a non-silicon member made of a metal material and bonded to the silicon via a bonding surface; wherein a flow path for a temperature control medium is formed inside at least one of the silicon and the non-silicon member. is provided. [Effects of the Invention]

[0006] According to one aspect, Lower electrode member for plasma processing apparatus formed from different materials and plasma processing apparatus can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is an enlarged view showing a part of a mounting table of the substrate processing apparatus according to the embodiment; [Figure 3]FIG. 4 is a diagram showing physical property values ​​of materials constituting a base of a mounting table according to an embodiment. [Figure 4] FIG. 1 is a diagram illustrating an example of the configuration of a 3D printer according to an embodiment. [Figure 5] 1 is a flowchart showing a method for manufacturing a base according to an embodiment. [Figure 6] 10 is a flowchart showing a method for manufacturing a base according to an embodiment of the present invention. [Figure 7] 1A and 1B are diagrams schematically illustrating bases formed by manufacturing methods 1 and 2 according to an embodiment of the present invention. [Figure 8] 10A to 10C are diagrams schematically illustrating a base manufacturing method 3 according to one embodiment and a shaped base. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Substrate processing equipment] First, a substrate processing apparatus 100 having a mounting table according to one embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 100 according to one embodiment. The substrate processing apparatus 100 is a capacitively coupled plasma processing apparatus.

[0010] The substrate processing apparatus 100 includes a processing vessel 112 and a mounting table 116. The processing vessel 112 has a substantially cylindrical shape, and its internal space serves as a processing chamber 112c. The processing vessel 112 is made of, for example, aluminum. A plasma-resistant ceramic coating, such as an alumite film and / or an yttrium oxide film, is formed on the surface of the processing vessel 112 facing the internal space. The processing vessel 112 is grounded. An opening 112p is formed in the sidewall of the processing vessel 112 to load and unload a wafer W into and from the processing chamber 112c. The opening 112p can be opened and closed by a gate valve GV.

[0011] The mounting table 116 is configured to support the wafer W in the processing chamber 112c. The mounting table 116 has a function of attracting the wafer W with an electrostatic chuck 120, a function of adjusting the temperature of the wafer W, and a structure for transmitting high frequency waves to the base 117. The base 117 has a first member 117a and a second member 117b. Details of the mounting table 116 will be described later.

[0012] The substrate processing apparatus 100 includes an upper electrode 130. The upper electrode 130 is disposed in an upper opening of a processing chamber 112 and is disposed substantially parallel to a mounting table 116 that functions as a lower electrode. An insulating support member 132 is interposed between the upper electrode 130 and the processing chamber 112.

[0013] The upper electrode 130 has a top plate 134 and a support 136. The top plate 134 has a substantially disk shape. The top plate 134 may be conductive. The top plate 134 is made of, for example, silicon or aluminum, and has a plasma-resistant ceramic coating formed on its surface. A plurality of gas discharge holes 134a are formed in the top plate 134. The gas discharge holes 134a extend in a substantially vertical direction.

[0014] The support 136 detachably supports the top plate 134. The support 136 is made of, for example, aluminum. A gas diffusion chamber 136a is formed in the support 136. A plurality of holes 136b extend from the gas diffusion chamber 136a, each of which communicates with a plurality of gas discharge holes 134a. A pipe 138 is connected to the gas diffusion chamber 136a via a port 136c. A gas supply unit 139 is connected to the pipe 138.

[0015] The substrate processing apparatus 100 includes an exhaust device 150. The exhaust device 150 includes one or more pumps, such as a turbomolecular pump or a dry pump, and a pressure adjustment valve. The exhaust device 150 is connected to an exhaust port 149 formed in the processing chamber 112.

[0016] The substrate processing apparatus 100 includes a first control unit 151. A storage unit of the first control unit 151 stores control programs and recipe data for controlling various processes executed by the substrate processing apparatus 100 using a processor. For example, the storage unit of the first control unit 151 stores a control program and recipe data for executing a plasma process such as an etching process in the substrate processing apparatus 100.

[0017] The components of the mounting table 116 will be described in detail below with reference to Fig. 2 in addition to Fig. 1. Fig. 2 is an enlarged cross-sectional view showing a part of the mounting table 116 of the substrate processing apparatus 100 shown in Fig. 1.

[0018] The mounting table 116 includes a base 117 and an electrostatic chuck 120. The base 117 includes a first member 117a and a second member 117b. The first member 117a and the second member 117b are sheet-shaped or plate-shaped. While there is no strict distinction between sheet-shaped and plate-shaped, the first member 117a and the second member 117b are generally thinner than the plate-shaped members. The top surface of the first member 117a and the bottom surface of the second member 117b are bonded together, and the second member 117b is bonded to the electrostatic chuck 120 on the side opposite to the bonding surface with the first member 117a. As a result, the second member 117b is stacked on the first member 117a, and the electrostatic chuck 120 is stacked on top of the second member 117b.

[0019] The base 117 is supported by a support member 114 extending upward from the bottom of the processing vessel 112. The support member 114 is an insulating member made of, for example, aluminum oxide (alumina). The support member 114 has a substantially cylindrical shape. The first member 117a, the second member 117b, and the electrostatic chuck 120 all have a substantially disk shape around the axis Z.

[0020] A power feeder 119 is connected to the underside of the base 117. The power feeder 119 is, for example, a power feed rod. The power feeder 119 is made of aluminum or an aluminum alloy. A first high-frequency power supply 62 is connected to the power feeder 119 via a matching box 66. A second high-frequency power supply 64 is also connected to the power feeder 119 via a matching box 68.

[0021] A flow path 117f for a temperature control medium is formed in the base 117. The flow path 117f extends, for example, in a spiral shape within the base 117. A temperature control medium is supplied to the flow path 117f from a chiller unit. In one embodiment, the temperature control medium supplied to the flow path 117f is a refrigerant that absorbs heat by vaporizing and performs cooling. This refrigerant may be, for example, a hydrofluorocarbon refrigerant. The flow path 117f may be formed inside at least one of the first member 117a and the second member 117b. That is, the flow path 117f may be provided across the first member 117a and the second member 117b as in this embodiment, or may be provided inside the second member 117b or the first member 117a. However, in order to improve the cooling performance of the electrostatic chuck 120, it is preferable that at least a portion of the flow path 117f be formed inside the second member 117b, which is close to the electrostatic chuck 120.

[0022] The electrostatic chuck 120 has an adsorption portion 123. The adsorption portion 123 is provided on the electrostatic chuck 120 on the second member 117b. The adsorption portion 123 has a substantially disk shape and is made of ceramics. The ceramics constituting the adsorption portion 123 has a surface roughness of 1×10 in a temperature range of room temperature (for example, 20°C) to 400°C. 15 The ceramic may be one having a volume resistivity of Ω·cm or more. For example, aluminum oxide (alumina) may be used as such a ceramic. A boundary layer 129 is formed between the adsorption portion 123 and the second member 117b.

[0023] The attracting portion 123 of the electrostatic chuck 120 incorporates an electrode film 125. A DC power supply is electrically connected to the electrode film 125. When a DC voltage from the DC power supply is applied to the electrode film 125, the attracting portion 123 generates an electrostatic force such as Coulomb force, and holds the wafer W by the electrostatic force.

[0024] The attraction part 123 further includes a built-in heater 156. The heater 156 is disposed below the electrode film 125 of the electrostatic chuck 120. The heater 156 is connected to a heater power supply.

[0025] The fastening member 171 is made of a metal, such as titanium, having low thermal conductivity to suppress heat conduction between the first member 117a and the second member 117b through the fastening member 171. The first member 117a is fixed to the fastening member 171 by screws 173 at its periphery.

[0026] A heater 176 is provided on the fastening member 171. The heater 176 extends in the circumferential direction and is connected to a heater power supply via a filter. The filter is provided to prevent high frequency waves from entering the heater power supply.

[0027] The heater 176 is provided between the first film 180 and the second film 182. The first film 180 is provided on the fastening member 171 side of the second film 182. The first film 180 has a thermal conductivity lower than that of the second film 182. For example, the first film 180 may be a thermally sprayed film made of zirconia, and the second film 182 may be a thermally sprayed film made of yttrium oxide (yttria). Alternatively, the heater 176 may be a thermally sprayed film of tungsten.

[0028] An edge ring 185 is provided on the second film 182. The edge ring 185 is made of, for example, silicon. The edge ring 185 is heated by heat from the heater 176. Furthermore, most of the heat flux from the heater 176 is directed toward the second film 182 rather than the first film 180, and then toward the edge ring 185 via the second film 182. Therefore, the edge ring 185 is efficiently heated.

[0029] The outer peripheries of the base 117, the fastening member 171, etc. are covered with one or more insulating members 186. The one or more insulating members 186 are made of, for example, aluminum oxide or quartz.

[0030] [First member and second member] As described above, the base 117 of the mounting table 116 has a two-layer structure made up of a first member 117a and a second member 117b.

[0031] The first member 117a and the second member 117b are made of different materials. Fig. 3 shows examples of materials that can be used for the first member 117a or the second member 117b according to one embodiment, and is a diagram illustrating the linear expansion coefficient, thermal conductivity, and density of each material.

[0032] The first member 117a has a density of 5.0 g / cm 3 The material may be aluminum, an aluminum alloy, titanium, or a titanium alloy, for example. These materials have a density of 5.0 g / cm3 as shown in the dotted box A in FIG. 3. 3 or less, and is lighter than molybdenum or the like, thereby making it possible to reduce the weight of the entire base 117.

[0033] The lower surface of the second member 117b is joined to the first member 117a, and the upper surface of the second member 117b is joined to the electrostatic chuck 120. As shown in the dotted line frame B, the second member 117b has a linear expansion coefficient of 5.0×10 -6 / K or less and is made of a material with a thermal conductivity of 100 W / mK or more, as shown in the dotted line frame C. The second member 117b may be made of, for example, molybdenum, tungsten, silicon, silicon carbide, or aluminum nitride. These materials have a linear expansion coefficient of 5.0×10 -6 / K or less, which is a low coefficient of linear expansion compared to titanium and the like. Furthermore, these materials have a thermal conductivity of 100 W / mK or more, which is a high coefficient of thermal conductivity compared to titanium and the like. From the above, the second member 117b has a linear expansion coefficient of 5.0×10 -6 / K or less and a thermal conductivity of 100 W / mK or more, the cooling performance can be improved. 3 By using the following lightweight materials, the entire base 117 can be made lightweight.

[0034] That is, the second member 117b close to the electrostatic chuck 120 is made of a material with high cooling performance, with a thermal conductivity of 100 W / mK or more. This can enhance the cooling effect of the electrostatic chuck 120. In addition, the second member 117b is made of a material with a linear expansion coefficient of 5.0×10 -6 / K or less. This reduces the difference in linear expansion coefficient between the ceramic electrostatic chuck 120 and the second member 117b, thereby preventing the electrostatic chuck 120 from cracking or being damaged due to friction between the electrostatic chuck 120 and the second member 117b caused by temperature fluctuations.

[0035] Furthermore, the first member 117a is made of a lightweight material. This allows the overall weight of the base 117 to be reduced. For example, tungsten (W) shown in FIG. 3 has better thermal conductivity and a lower linear expansion coefficient than titanium, but is approximately four times heavier than titanium. Therefore, by using tungsten for the second member 117b to improve functionality in terms of thermal conductivity and linear expansion coefficient, and by using titanium for the first member 117a, a base 117 can be formed that is both functional and lightweight.

[0036] According to the substrate processing apparatus 100 equipped with the mounting table 116 having such a base 117, the cooling efficiency of the electrostatic chuck 120 can be improved without damaging the electrostatic chuck 120 over a wide temperature range from low to high, and good plasma processing can be performed on the substrate W.

[0037] [Manufacturing method] Next, methods 1 and 2 for manufacturing the base 117 according to an embodiment when using a 3D printer will be described with reference to FIGS. 4 to 7. FIG. 4 is a diagram showing an example of the configuration of a 3D printer according to an embodiment. FIG. 5 is a flowchart showing method 1 for manufacturing the base 117 according to an embodiment. FIG. 6 is a flowchart showing method 2 for manufacturing the base 117 according to an embodiment. FIG. 7(a) is a diagram schematically showing the base 117 manufactured by manufacturing method 1 according to an embodiment. FIG. 7(b) is a diagram schematically showing the base 117 manufactured by manufacturing method 2 according to an embodiment.

[0038] (3D printer configuration) The 3D printer 200 according to this embodiment is an example of an apparatus that models (manufactures) the base 117. In manufacturing methods 1 and 2 of the base 117 described below, the 3D printer 200 shown in Fig. 4 is used. However, the apparatus that models the base 117 is not limited to the configuration of the 3D printer 200 shown in Fig. 4.

[0039] The 3D printer 200 is capable of forming a three-dimensional object in a chamber 210. In the 3D printer 200 according to this embodiment, three-dimensional data for forming a base 117 as a three-dimensional object is stored in a storage unit such as a RAM 256, and the base 117 is manufactured based on the three-dimensional data. The base 117 is formed on a mounting surface of a stage 202 provided on a table. The stage 202 can be raised and lowered, for example, so as to gradually lower, as the formation of the base 117 progresses.

[0040] Two blades 205 are provided spaced apart on a table within the chamber 210. The raw material storage unit 203 is located in the upper part of the chamber 210 and above the two blades 205. The raw material storage unit 203 stores the raw material for forming the object, i.e., silicon (Si) powder material for forming the second member 117b of the base 117. In this embodiment, the first member 117a is already formed into a sheet or plate shape and placed on the stage 202. However, the first member 117a may also be formed using the 3D printer 200. In this case, if the first member 117a is made of aluminum and the second member 117b is made of silicon, aluminum powder and silicon powder are stored separately in the raw material storage unit 203.

[0041] The raw materials of the first member 117a and the second member 117b are not limited to powder but may be wire-shaped. The first member 117a and the second member 117b are formed from different materials.

[0042] Raw material is fed from a raw material storage unit 203 between two blades 205. The fed raw material is formed into powder using two blades 205 driven by a blade driving unit 207. A predetermined amount of powdered raw material (hereinafter also referred to as "powder material 5") is supplied to a laser beam scanning space 209. FIG. 1 shows a state in which the powder material 5 is spread over the laser beam scanning space 209 on a table.

[0043] In this way, the silicon powder material 5 is supplied while being irradiated with an energy beam to melt the powder material 5. In this embodiment, laser light A (optical laser) is used as the energy beam to be irradiated.

[0044] Laser light A is output from a light source 206, and the irradiation angle is changed by a galvanometer mirror 208, and the laser light A is irradiated onto a predetermined position in the irradiation area on the stage 202 through a laser transmission window 211. The light source 206 and the galvanometer mirror 208 are preferably disposed outside the chamber 210.

[0045] This allows the laser beam A to scan the stage 202 in at least two dimensions (X and Y directions). For example, the galvanometer mirror 208 is controlled to move the irradiation spot of the laser beam A on the stage 202 in accordance with three-dimensional data indicating the three-dimensional structure of the object. Specifically, under the control of the second control unit 250, the galvanometer mirror 208 changes the irradiation angle, causing the laser beam A to scan in two dimensions (X and Y directions) as the formation of the object progresses. The laser beam A melts the silicon powder on the stage 202. The material is then cooled and solidified to form the object 3. Here, the second member 117b is formed on the upper surface of the first member 117a, and the base 117 is manufactured as the object 3.

[0046] During the formation of second member 117b, the aluminum on the top surface of first member 117a is also melted by laser light A, and aluminum and silicon become mixed at the interface between first member 117a and second member 117b.

[0047] As the 3D printer 200 continues to mold the base 117, the silicon concentration in the aluminum that makes up the first member 117a increases, and the material of the second member 117b eventually becomes a molded object with the same composition as the silicon powder. In this way, the bonding surface between the first member 117a and the second member 117b can be formed while changing the blending ratio of the material of the first member 117a to the material of the second member 117b.

[0048] In the above description, a solid plate-shaped member that forms the first member 117a is prepared on the stage 202 and silicon powder is supplied thereon, but this is not limiting. For example, a plate-shaped member for the second member 117b may be prepared and aluminum powder may be supplied thereon to form the first member 117a.

[0049] The second control unit 250 has a CPU 252, a ROM 254, and a RAM 256. The second control unit 250 controls the supply of raw material powder from the raw material storage unit 203 and the elevation of the stage 202. The second control unit 250 also controls the lighting of the light source 206 and the change of the laser irradiation angle by the galvanometer mirror 208. In this way, the second control unit 250 controls the operation of manufacturing the base 117.

[0050] The control program executed by the CPU 252 is stored, for example, in the ROM 254. The CPU 252 controls the production of the model 3 (the base 117) by executing the control program based on three-dimensional data stored, for example, in the RAM 256. The control program may be stored in a fixed recording medium, or in a removable, computer-readable recording medium such as various flash memories or optical (magnetic) disks.

[0051] Furthermore, the second control unit 250 has a display 258 and an input device 260 such as a keyboard or a pointing device. The display 258 is used to display the progress status of the modeling of the base 117. The input device 260 is used to issue commands such as starting and stopping the modeling operation of the base 117 and to input control parameters during setting.

[0052] The three-dimensional data is stored in a storage unit such as the RAM 256. The three-dimensional data includes data on the three-dimensional structure of the base 117 and various parts that form the hollow structure inside the base 117, such as the flow channel 117f.

[0053] (Manufacturing method 1) Next, manufacturing method 1 according to this embodiment, in which the 3D printer 200 is operated to form the base 117, will be described with reference to Fig. 5. In the following description, aluminum is used as the material for the first member 117a, and silicon is used as the material for the second member 117b, but the materials are not limited to these.

[0054] When this process starts, the second control unit 250 (CPU 252) acquires the three-dimensional data stored in the RAM 256 (step S10). Next, the first member 117a made of aluminum is placed on the stage 202 (step S12).

[0055] Based on the three-dimensional data, the second control unit 250 supplies silicon powder to the laser beam scanning space 209 while irradiating the powder with laser light (step S14). At this time, the second control unit 250 supplies silicon powder, which is the powder material 5, to the laser beam scanning space 209 using two blades 205 driven by a blade driving unit 207. The second control unit 250 also changes the laser irradiation angle using a galvanometer mirror 208, and irradiates the silicon powder with laser light. The second control unit 250 repeatedly executes the operations of supplying silicon powder, irradiating the supplied powder with laser light, and melting and solidifying it. As a result, the second control unit 250 integrates the silicon powder with the first member 117a, completing the formation of the second member 117b (step S16), and ends this process.

[0056] (Manufacturing method 2) Next, a manufacturing method 2 according to the present embodiment, in which the 3D printer 200 is operated to form the base 117, will be described with reference to FIG. 6. In manufacturing method 2, the second member 117b, the inclined stack, and the first member 117a are formed in this order. When this process starts, the second control unit 250 acquires the three-dimensional data stored in the RAM 256 (step S10).

[0057] Next, the second control unit 250 irradiates the silicon powder and aluminum powder with a laser beam while changing the compounding ratio and supplying the powder to the laser beam scanning space 209 (step S20). At this time, the second control unit 250 gradually increases the compounding ratio of the silicon powder from 0% based on the three-dimensional data and changes it continuously or stepwise up to 100% while supplying. Also, the second control unit 250 gradually decreases the compounding ratio of the aluminum powder based on the three-dimensional data from 100% and changes it continuously or stepwise down to 0% while supplying.

[0058] As a result, the blending ratio of silicon powder and aluminum powder supplied to the laser beam scanning space 209 changes from a state in which there is more aluminum powder to a state in which there is more silicon powder. The second control unit 250 repeatedly executes an operation of supplying silicon powder and aluminum powder blended at a predetermined ratio to the laser beam scanning space 209, irradiating the supplied powder with laser light, and melting and solidifying it. As a result, the second control unit 250 completes the formation of the first member 117a and the second member 117b including the inclined lamination (step S22), and ends this process.

[0059] Fig. 7(a) shows an example of a base 117 formed by manufacturing method 1 according to this embodiment. Fig. 7(b) shows an example of a base 117 formed by manufacturing method 2 according to this embodiment. This makes it possible to form a base 117 made of different materials, including the hollow structure of the internal flow channel 117f, based on three-dimensional data.

[0060] In manufacturing method 1 shown in FIG. 7(a), silicon powder is supplied onto a plate-shaped first member 117a, and a second member 117b is molded on the first member 117a while melting the silicon powder with laser light A. At the interface between the first member 117a and the second member 117b, the laser light A melts the aluminum on the surface of the second member 117b, creating a layer of material (Al+Si) mixed with the molten silicon powder. As the molding process progresses, the resulting molded object has the same composition as the silicon powder. This allows the manufacture of a base 117 formed from dissimilar materials, the first member 117a and the second member 117b. Furthermore, eliminating the adhesive layer that bonds the first member 117a and the second member 117b reduces the manufacturing process and shortens the manufacturing lead time.

[0061] In manufacturing method 1, aluminum powder may be supplied onto the plate-shaped second member 117b, and the first member 117a may be formed on the second member 117b while melting the aluminum powder with laser light A. This also makes it possible to manufacture the base 117 formed from different materials, that is, the first member 117a and the second member 117b, as shown in FIG.

[0062] In manufacturing method 2 shown in FIG. 7(b), a base 117 is formed in which an inclined layer 117c is formed between a first member 117a and a second member 117b. In manufacturing method 2, first, only aluminum powder is supplied, and the first member 117a is formed while melting the aluminum powder with laser light A. Next, the aluminum powder is supplied at a gradually decreasing blending rate from 100% to 0%, and the silicon powder is supplied at a gradually increasing blending rate from 0% to 100%, and the aluminum powder and silicon powder are melted with laser light A to form an inclined layer 117c. Finally, only silicon powder is supplied, and the silicon powder is melted with laser light A to form a second member 117b.

[0063] According to this, a gradient stack 117c is formed between the first member 117a and the second member 117b by varying the material ratio of each member. By gradually varying the material ratios to form the gradient stack 117c, heat transfer between the different materials can be improved, further enhancing temperature controllability. Furthermore, by eliminating the adhesive layer that bonds the first member 117a and the second member 117b, the number of manufacturing steps can be reduced, shortening the manufacturing lead time.

[0064] In manufacturing method 2, the second member 117b, the inclined stacked layer 117c, and the first member 117a may be formed in this order. The inclined stacked layer 117c may be formed in a gradational shape by linearly changing the compounding ratio of aluminum powder and silicon powder, or in a stepwise shape by changing the compounding ratio in stages.

[0065] Note that the 3D printer 200 is not limited to this configuration, and may be, for example, a directed energy 3D printer, or a 3D printer using other methods. Regarding the energy source, in addition to the laser light mentioned above, an electron beam or a method of imparting kinetic energy to the particles themselves may also be used. Examples of 3D printers using other methods include binder injection 3D printers, sheet lamination 3D printers, photopolymerization curing (stereolithography) 3D printers, material extrusion (fused deposition modeling) 3D printers, and cold spray 3D printers.

[0066] (Manufacturing method 3) Next, a manufacturing method 3 according to the present embodiment, in which the base 117 is formed using diffusion bonding, will be described with reference to Fig. 8. Fig. 8 is a diagram schematically illustrating the steps of manufacturing method 3 for the base 117 according to one embodiment and the manufactured base 117. In the following description, titanium is used as the material for the first member 117a and tungsten is used as the material for the second member 117b, but the materials are not limited to these.

[0067] 8(a), in manufacturing method 3, titanium sheet-like members 12 to 14 having flow paths formed therein are stacked in order on a titanium sheet-like or plate-like member 11. Next, a sheet-like member 15 made of a mixed material of titanium and tungsten and having flow paths formed therein is stacked on top of the sheet-like or plate-like member 11.

[0068] Next, tungsten sheet-like members 16-18 with flow paths formed therein are stacked. Next, tungsten sheet- or plate-like member 19 is stacked. In this state, diffusion bonding is performed, and the entire assembly is heated and pressure-bonded. As a result, as shown in FIG. 8(b), the interfaces of all the sheet- or plate-like members are pressure-bonded and integrated. As a result, base 117 is manufactured, in which first member 117a, intermediate layer 117d, and second member 117b are integrated.

[0069] In manufacturing method 3, the sheet-like or plate-like members of second member 117b, intermediate layer 117d, and first member 117a may be stacked in this order, and then diffusion bonding may be performed. In this case, the sheet-like or plate-like member constituting first member 117a before diffusion bonding may be either a multi-layer or a single layer. Similarly, the sheet-like or plate-like members constituting intermediate layer 117d and second member 117b may each be either a multi-layer or a single layer.

[0070] The intermediate layer 117d may be omitted. However, by providing the intermediate layer 117d made of a mixed material of the first member 117a and the second member 117b between the first member 117a and the second member 117b, the bonding strength between the first member 117a and the second member 117b can be improved, and thermal conductivity can be further increased. In particular, it is preferable to provide the intermediate layer 117d when bonding compositions that have poor bonding strength to the materials of the first member 117a and the second member 117b.

[0071] As described above, by forming the base 117 of the mounting table 116 according to this embodiment from the first member 117a and the second member 117b made of different materials that satisfy desired conditions, it is possible to provide a mounting table 116 that has good thermal conductivity, a low linear expansion coefficient, and is lightweight. This makes it possible to prevent cracking of the electrostatic chuck 120, improve heat dissipation from the electrostatic chuck 120, and enhance temperature controllability of the substrate W.

[0072] The mounting table and substrate processing apparatus according to the presently disclosed embodiment should be considered to be illustrative in all respects and not restrictive. The above-described embodiment can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways and can be combined with each other without any contradiction.

[0073] The substrate processing apparatus of the present disclosure can be applied to any type of apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).

[0074] Furthermore, the substrate processing apparatus is not limited to an etching apparatus, and may be a film forming apparatus, an ashing apparatus, a doping apparatus, or the like, as long as it is an apparatus that performs a predetermined process (for example, film formation, etching, etc.) on a substrate using plasma. [Explanation of symbols]

[0075] 62 First high frequency power supply 64 Second high frequency power supply 100 Substrate processing apparatus 112 Processing vessel 112c Processing Room 116 Mounting table 117 Foundation 117a First member 117b Second member 117f Channel 120 Electrostatic Chuck 123 Adsorption part 125 Electrode membrane 129 Boundary layer 130 Upper electrode 139 Gas Supply Unit 150 Exhaust system 151 First Control Section 156 Heater 200 3D printers 202 Stages 203 Raw material storage area 205 Blade 206 Light source 207 Blade drive unit 208 Galvanometer Mirror 209 Laser beam scanning space 210 Chamber 250 Second Control Section

Claims

1. An electrode member for a plasma processing apparatus provided on a mounting table, comprising: Silicon and a member other than silicon, which is bonded to the silicon via a bonding surface and is made of a metal material; An electrode member for a plasma processing apparatus, wherein a flow path for a temperature control medium is formed inside at least one of the silicon and the non-silicon member.

2. The bonding surface is formed while changing the compounding ratio of the silicon and the material of the member other than the silicon. The electrode member for a plasma processing apparatus according to claim 1 .

3. The joining surface is formed by a 3D printer.

3. The electrode member for a plasma processing apparatus according to claim 1.

4. The bonding surface is formed by diffusion bonding. The electrode member for a plasma processing apparatus according to claim 1 .

5. At least one of the silicon and the non-silicon member is sheet-shaped or plate-shaped.

5. An electrode member for a plasma processing apparatus according to claim 1.

6. The flow path is formed across the silicon and the member other than silicon.

6. An electrode member for a plasma processing apparatus according to claim 1.

7. The metal material of the member other than silicon is any one of aluminum, aluminum alloy, titanium, and titanium alloy.

7. An electrode member for a plasma processing apparatus according to claim 1.

8. a plasma processing chamber; an electrode member provided on a mounting table disposed in the plasma processing chamber; The electrode member is Silicon and a member other than silicon, which is bonded to the silicon via a bonding surface and is made of a metal material; A plasma processing apparatus, wherein a flow path for a temperature control medium is formed inside at least one of the silicon and the non-silicon member.

9. The bonding surface is formed while changing the compounding ratio of the silicon and the material of the member other than the silicon. The plasma processing apparatus according to claim 8 .

10. The joining surface is formed by a 3D printer.

10. The plasma processing apparatus according to claim 8 or 9.

11. The bonding surface is formed by diffusion bonding. The plasma processing apparatus according to claim 8 .

12. At least one of the silicon and the non-silicon member is sheet-shaped or plate-shaped.

12. A plasma processing apparatus according to claim 8.

13. The flow path is formed across the silicon and the member other than silicon.

13. A plasma processing apparatus according to any one of claims 8 to 12.

14. The metal material of the member other than silicon is any one of aluminum, aluminum alloy, titanium, and titanium alloy.

14. A plasma processing apparatus according to claim 8.

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