Semiconductor device and manufacturing method thereof

Abstract

To provide a semiconductor device including loop-shaped wires for suppressing displacement of a semiconductor element, and a method for manufacturing the same.SOLUTION: A semiconductor element 3 is held by wires 4a to 4d suppressing displacement separated from a package substrate 1. The wires 4a to 4d form a convex loop above between a junction point with a chip electrode 5 and a junction point with a package electrode 6 with a bent part 7 for changing a wire locus in a plan view as an apex. Displacement of the semiconductor element 3 can also be suppressed by forming the loop so that a bending direction of the bent part 7 in the plan view differs from each other between the wires. After joining the wires to one of the chip electrode 5 and the package electrode 6, the bent part 7 can be easily formed by forming a bent part by deforming the wires and joining the bent part to the other electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a hollow package structure in which a semiconductor element separated from a package base is held only by wires, and a manufacturing method thereof. [Background technology]

[0002] With the increasing number of semiconductor devices installed in electronic devices, there is a demand for semiconductor devices that can withstand a variety of package shapes and harsh usage environments. For example, depending on the usage state of the electronic device, there is a demand for semiconductor devices that can withstand use in high-temperature environments exceeding 300°C. Therefore, the present applicant has proposed a semiconductor device that can be used in high-temperature environments (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-88047 Summary of the Invention [Problem to be solved by the invention]

[0004] FIG. 8 is a cross-sectional view illustrating a method for manufacturing a semiconductor device previously proposed by the present applicant. As shown in FIG. 8, first, a semiconductor element 23 is bonded to a package substrate 21 made of ceramic or the like with a resin 22, and electrodes (not shown) of the semiconductor element 23 are connected to electrodes (not shown) of the package substrate 21 with wires 24 (FIG. 8(a)). A plan view of this state is shown in FIG. 8(b). It can be seen that the trajectory of the wires 24 is linear in the plan view. The temperature is then raised to 350°C and lowered to room temperature, causing the resin 22 to decompose, breaking the gap between the bottom surface of the semiconductor element 23 and the top surface of the package substrate 21, forming a gap S in the resin 22. The formation of this gap S separates the semiconductor element 23 from the package substrate 21, resulting in a structure in which the semiconductor element 23 is held only by the wires 24. A lid 25 is then bonded to the package substrate 21 with a metal paste 26, completing the semiconductor device (FIG. 8(c)).

[0005] However, the semiconductor device previously proposed by the applicant has a problem in that the semiconductor element 23 is separated from the package substrate 21, and therefore the semiconductor element 23 is displaced together with the wires 24, causing problems such as damage to the semiconductor element 23 and breakage or short-circuiting of the wires 24. Therefore, an object of the present invention is to provide a semiconductor device and a manufacturing method thereof that can suppress displacement of the semiconductor element even when the semiconductor element is held in place only by wires. [Means for solving the problem]

[0006] The semiconductor device of the present invention comprises a package substrate having package electrodes on an upper surface thereof, a lid portion which is combined with the package substrate to form a hollow package, and a semiconductor element having chip electrodes on an upper surface thereof, the package electrodes and the chip electrodes being connected only by a plurality of wires and being held in the hollow package separately from the package substrate, wherein the plurality of wires include at least two wires which form an upwardly convex loop between a junction point with the chip electrode and a junction point with the package electrode, with a bent portion at the top which changes the trajectory of the wire in a plan view, and the bending directions of the bent portion in a plan view differ from each other between the wires. The bent portion is disposed on the semiconductor element in a plan view. It is structured as follows.

[0007] The method for manufacturing a semiconductor device of the present invention One aspect of the method includes a wire connecting step of connecting chip electrodes on a semiconductor element bonded on a package substrate and package electrodes on the package substrate with a plurality of wires, a step of separating the semiconductor element from the package substrate, and a step of bonding a lid onto the package substrate to form a hollow package, wherein in the wire connecting step, at least two of the wires are formed by a step of bonding a wire to one of the chip electrodes or the package electrodes, forming a bent portion in the wire so as to change the trajectory of the wire in a planar view, and bonding the wire to the other of the chip electrodes or the package electrodes so as to form a loop that is convex upward with the bent portion as a top, and the bent portions are arranged so that the bending directions in a planar view of the bent portions are different between the wires, The wire connecting step is a step of joining a wire to the chip electrode, placing the clamped wire in a V-groove of a bonding tool at a portion of the wire where a bent portion is to be formed, rotating the bonding tool to form the bent portion, and then releasing the clamp on the wire and lowering the bonding tool to join the wire to the package electrode. It is structured as follows. Another aspect of the method for manufacturing a semiconductor device of the present invention includes a wire connecting step of connecting chip electrodes on a semiconductor element bonded to a package substrate and package electrodes on the package substrate with a plurality of wires, a step of separating the semiconductor element from the package substrate, and a step of bonding a lid onto the package substrate to form a hollow package, wherein in the wire connecting step, at least two of the wires are formed by a step of bonding the wire to one of the chip electrodes or the package electrodes, forming a bent portion in the wire so as to change the trajectory of the wire in a planar view, and bonding the wire to the other of the chip electrodes or the package electrodes so as to form an upwardly convex loop with the bent portion as an apex, and the bent portions are arranged so that the bending directions in a planar view of the wires are different from each other, and the wire connecting step is configured to include a step of forming the bent portion that is arranged on the semiconductor element in a planar view. [Effects of the Invention]

[0008] According to the semiconductor device of the present invention, the wire connecting the chip electrode of the semiconductor element and the package electrode on the package substrate has a bent portion that changes the trajectory of the wire in a plan view, and the wire forms a convex loop with the bent portion as its apex, thereby suppressing displacement of the semiconductor element. Furthermore, according to the manufacturing method of the semiconductor device of the present invention, a semiconductor device that suppresses displacement of the semiconductor element can be easily manufactured by simply adding a process of forming a bent portion that changes the trajectory of the wire in a plan view to a normal wire bonding process. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is an explanatory diagram of one embodiment (first embodiment) of a semiconductor device of the present invention. [Figure 2] FIG. 4 is an explanatory diagram of another embodiment (Embodiment 2) of the semiconductor device of the present invention. [Figure 3] 1A to 1C are explanatory diagrams illustrating an embodiment of a method for manufacturing a semiconductor device according to the present invention. [Figure 4] FIG. 1 is a diagram illustrating a general wire bonding apparatus. [Figure 5] 1A to 1C are diagrams illustrating an example of a wire bonding step in the method for manufacturing a semiconductor device of the present invention. [Figure 6] 1A to 1C are diagrams illustrating an example of a wire bonding step in the method for manufacturing a semiconductor device of the present invention. [Figure 7] 1A to 1C are diagrams illustrating an example of a wire bonding step in the method for manufacturing a semiconductor device of the present invention. [Figure 8] 1A to 1C are cross-sectional views illustrating a conventional method for manufacturing a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0010] Next, embodiments of the semiconductor device of the present invention and implementations of the manufacturing method thereof will be described with reference to the drawings, but the present invention is not limited to these embodiments and implementations, and the members, materials, etc. described below can be variously modified within the scope of the spirit of the present invention. Furthermore, in the drawings, the same reference numerals indicate equivalent or identical items, and the size and positional relationship between each component are for convenience and do not reflect the actual situation.

[0011] (Embodiment 1) Fig. 1 is an explanatory diagram of one embodiment (embodiment 1) of the semiconductor device of the present invention, in which Fig. 1(a) is a plan view schematic diagram showing a state in which a semiconductor element 3 is disposed on a flat package substrate 1 and four wires 4a to 4d are connected to chip electrodes 5 on the semiconductor element 3 and package electrodes 6 on the package substrate 1, respectively, and Fig. 1(b) is a cross-sectional view corresponding to line AA in Fig. 1(a), showing a state in which a lid 2 is bonded onto the package substrate 1. In Fig. 1(a), the lid 2 is omitted and the area to which the lid 2 is bonded is indicated by a two-dot chain line.

[0012] In the semiconductor device 10 of this embodiment, the wires 4a to 4d are wires that suppress displacement. As shown in FIG. 1(a), each of the four wires 4a to 4d has a bent portion 7 that changes the trajectory of the wire in a plan view. The chip electrodes 5 of the semiconductor element 3 to which the wires 4a to 4d are connected may be chip electrodes connected to input terminals, output terminals, or control terminals of a functional element mounted on the semiconductor element 3, or may be chip electrodes that provide connection points for connecting wires that suppress displacement unrelated to the operation of the semiconductor element 3. The package electrodes 6 may also be package electrodes connected to input terminals, output terminals, or control terminals of a functional element mounted on the semiconductor element 3, or may be package electrodes that provide connection points for connecting wires that suppress displacement.

[0013] 1(b), one end of each of wires 4a and 4d is joined to chip electrode 5 on the top surface of semiconductor element 3, rises from this joining point, forms a convex loop with bent portion 7 as its apex, and the other end is joined to package electrode 6 on the top surface of package substrate 1. The same applies to wires 4b and 4c.

[0014] The semiconductor element 3 is separated from the package base 1 and is placed in a hollow package surrounded by the package base 1 and the lid 2, in a state where it is held only by wires 4a to 4d.

[0015] The semiconductor device 10 having such a structure suppresses displacement of the semiconductor element 3 as follows. First, the shape of the wire will be described. The wire 4a shown in FIG. 1 has one end bonded to a chip electrode 5 on the top surface of the semiconductor element 3, rises downward from the chip electrode 5 to a predetermined height in the drawing of FIG. 1(a), and has the other end bonded to a package electrode 6, with a bent portion 7 as its apex. The wire 4a extending from the chip electrode 5 in FIG. 1(a) extends downward from the chip electrode 5 in a plan view, and at the bent portion 7, it is bent counterclockwise by θ degrees (45 degrees in this drawing) from the direction of the wire before bending downward in the drawing (shown by the two-dot chain line in the drawing). The wire 4b has a shape symmetrical to the wire 4a with respect to a line passing through the midpoint of the long side of the semiconductor element 3 in a plan view. The wires 4c and 4d have shapes symmetrical to the wires 4b and 4a, respectively, with respect to a line passing through the midpoint of the short side of the semiconductor element 3. In this way, each of the wires 4a to 4d rises from the junction with the chip electrode 5, and the extending direction of the wire changes in plan view at the bent portion 7 to join with the package electrode 6, forming an upwardly convex loop between the junction with the chip electrode and the junction with the package electrode 6. Furthermore, the bent portions 7 of the wires 4a to 4d are arranged so that the bending directions in plan view are different from each other.

[0016] In the semiconductor device 10 having such a structure, when the semiconductor element 3 attempts to displace in a direction perpendicular to the surface of the package substrate 1, an upward or downward force is applied to the wires 4a to 4d rising from the chip electrodes 5. The wires 4a to 4d have a bent portion 7 that changes the trajectory of the wire in a planar view, and have an upwardly convex loop shape with the bent portion 7 as its apex. Therefore, compared to a wire having a typical curved loop shape, the force with which the wires 4a to 4d as a whole push down or pull up the semiconductor element 3 is stronger than the force with which the semiconductor element 3 pushes up or pulls down the wires 4a to 4d. As a result, displacement of the semiconductor element 3 is suppressed.

[0017] Furthermore, if the bent portion 7 is disposed near the chip electrode 5, the wires 4a to 4d will rise at a steeper angle from the chip electrode 5, shortening the distance from the semiconductor element 3 to the bent portion 7 and more effectively suppressing the displacement of the semiconductor element 3. In particular, by disposing the bent portion 7 above the semiconductor element 3 in a plan view, the wires 4a to 4d will rise nearly perpendicularly from the chip electrode 5, which is preferable as it increases the effect of suppressing the displacement of the semiconductor element 3.

[0018] Furthermore, when the semiconductor element 3 attempts to displace horizontally relative to the surface of the package substrate 1, a horizontal pushing force is applied to the wires 4a to 4d rising from the chip electrodes 5. The wires 4a to 4d are shaped with bent portions 7 that change the trajectory of the wires in a planar view. By arranging the wires 4a to 4d so that their bent directions are different from one another, the force with which the wires 4a to 4d push back against the semiconductor element 3 is stronger than the force pushing the wires 4a to 4d from the direction of the bent portions 7 in a planar view that is convex. Furthermore, as shown in FIG. 1(a), the four wires 4a to 4d are arranged so that the bent portions 7 of the two wires 4a and 4c are oppositely oriented in the planar view, and the bent portions 7 of the wires 4b and 4d are oppositely oriented in the planar view. When the semiconductor element 3 displaces, among the forces promoting the displacement, a force applied from the direction of the bent portion 7 of a specific wire in a planar view that is convex is received by that specific wire and instead pushes back the semiconductor element 3. The direction of displacement of the semiconductor element 3 does not necessarily coincide with the direction in which the bent portion 7 of a particular wire is convex in plan view, but even in such a case, by making the bent directions of the bent portions 7 of the wires 4a to 4d in plan view different from one another, one or more of the wires will push back the horizontally moving semiconductor element 3. By thus shaping the wires that hold the semiconductor element 3 to have bent portions 7 that change the trajectory of the wire in plan view, the force with which the wires 4a to 4d as a whole push back against the semiconductor element 3 is stronger than the force with which the semiconductor element 3 pushes the wires 4a to 4d, compared to wires that have a typical linear trajectory without bends in plan view. As a result, displacement of the semiconductor element 3 is suppressed.

[0019] (Embodiment 2) Next, another embodiment (embodiment 2) of the semiconductor device of the present invention will be described. Figure 2 is an explanatory diagram of another embodiment (embodiment 2) of the semiconductor device of the present invention, and is a schematic plan view corresponding to the previously described Figure 1(a). The semiconductor device 20 of this embodiment shows a state in which a semiconductor element 3 is disposed on a flat package substrate 1 that serves as the package base, and six wires 4a to 4f are bonded to chip electrodes 5 on the semiconductor element 3 and package electrodes 6 on the package substrate 1, respectively.

[0020] The semiconductor device 20 of this embodiment is the same as the semiconductor device 10 in that it includes wires 4a to 4d that suppress displacement, but differs in that it includes wires 4e and 4f and chip electrodes 5 and package electrodes 6 that connect to them. The added wires 4e and 4f in this embodiment connect the chip electrodes 5 that connect to functional element input terminals, output terminals, control terminals, etc. formed on the semiconductor element 3, and the package electrodes 6 of the package substrate 1.

[0021] 2, the wires 4e and 4f do not have bent portions and have little effect in suppressing the displacement of the semiconductor element 3. However, the wires 4a to 4d that suppress the displacement and are joined to the chip electrodes 5 arranged at the four corners of the semiconductor element 3 suppress the displacement of the semiconductor element 3, as described in the first embodiment.

[0022] In the example shown in FIG. 2, if the semiconductor element 3 is large and the displacement of the semiconductor element 3 cannot be suppressed with only four wires, wires 4e and 4f can be replaced with wires that suppress the displacement. In this case, for example, wire 4e can have a structure similar to wire 4a, and wire 4f can have a structure similar to wire 4c. Alternatively, wire 4e can have a structure similar to wire 4b, and wire 4f can have a structure similar to wire 4d. When replacing wires 4e and 4f with wires that suppress displacement, tip electrode 5 can be moved to a position where contact between the wires does not occur in order to avoid contact between the wires. The number and arrangement of wires with bent portion 7 and the number and arrangement of wires without bent portion can be determined appropriately depending on the semiconductor element 3 whose displacement is to be suppressed.

[0023] (Method of manufacturing a semiconductor device) Next, an embodiment of the method for manufacturing a semiconductor device according to the present invention will be described.

[0024] FIG. 3 is an explanatory diagram of one embodiment of the semiconductor device manufacturing method of the present invention. First, a flat package substrate 1 composed of a silicon substrate or the like is prepared as the package substrate. Package electrodes 6 are formed on the package substrate 1. A curable resin composition, the cured product of which is water-soluble, is applied to the area of ​​the package substrate 1 where a semiconductor element is to be mounted. A semiconductor element 3 is placed on the curable resin composition, and the curable resin composition is cured (FIG. 3(a) , in which reference numeral 8 indicates the water-soluble resin obtained by curing the curable resin composition). This curing adheres the semiconductor element 3 to the package substrate 1, enabling wire bonding, as described below. The curable resin composition 8 can be applied using a dispenser or various printing methods to temporarily secure various components. It can be cured by irradiation with energy rays such as ultraviolet light, and the cured product can be further dissolved in water. The semiconductor element 3 is composed of silicon, lithium niobate, or the like, and is therefore UV-impermeable. Therefore, wire bonding is possible by curing the photocurable resin composition by irradiating the surface of the semiconductor element 3 with ultraviolet light from an oblique or lateral direction.

[0025] Thereafter, chip electrodes 5 on the semiconductor element 3 are wire-bonded to package electrodes 6 on the package substrate 1 using wires 4 made of aluminum, copper, or gold. Here, the wires 4 of the present invention do not have a curved loop shape with a linear trajectory in a typical planar view, but can be formed as a wire that suppresses displacement by having a desired loop shape with a bent portion 7 that changes the trajectory of the wire in a planar view (FIG. 3b). Details of the wire bonding process for forming the wire 4 into a loop shape with a bent portion 7 will be described later.

[0026] The package substrate 1 with the semiconductor element 3 attached is immersed in water to dissolve and remove the hardened water-soluble resin 8. By removing the water-soluble resin 8, the semiconductor element 3 is separated from the package substrate 1 (Figure 3c). Instead of water, a mixed solvent of water and a surfactant, a mixed solvent of water and a hydrophilic organic solvent, or the like can be used as the solvent for dissolving the water-soluble resin 8. If necessary, ultrasonic waves may be applied while the package substrate is immersed in the solvent. When removing the water-soluble resin 8, it is necessary to select conditions that do not cause deformation or damage to the wire 4 with the bent portion 7 formed thereon. It is also necessary to select conditions that do not cause deformation or damage to the connection between the wire 4 and the chip electrode 5, the connection between the wire 4 and the package electrode 6, or the electrodes and wiring formed on the semiconductor element 3. For example, by immersing the package substrate in 25°C water and applying ultrasonic waves, the water-soluble resin 8 can be dissolved and removed in approximately 3 to 10 minutes.

[0027] The semiconductor device with a hollow package structure is completed by bonding the lid 2 onto the package base 1 using a desired adhesive (FIG. 3d). The lid 2 can be made of, for example, glass or ceramic.

[0028] Next, an example of the wire bonding process will be described. The wire 4 used is an aluminum wire with a diameter of 200 μm, and the wire bonding process is described by using the wedge bonding method to form the loop shape of the wire 4a shown in Figures 1 and 2.

[0029] Specifically, this wire bonding process uses a typical wedge bonding machine. Figure 4 is an explanatory diagram of a typical wedge bonding machine. When bonding a wire 4 to a chip electrode 5 formed on a semiconductor element 3, the wire 4 is fed through a guide 10 (Figure 4(a)). A predetermined load is applied to a bonding tool 9 to which ultrasonic vibrations are applied, thereby compressing the wire 4 and bonding the wire 4 to the chip electrode 5. Figure 4(b) shows a cross section of the tip of the bonding tool 9, perpendicular to the cross section shown in Figure 4(a). As shown in Figure 4(b), a V-groove 13 is formed at the tip of the bonding tool 9. When the wire 4 is placed in this V-groove 13 and compressed by the bonding tool 9, the wire 4 is crushed and bonded to the chip electrode 5. In Figure 4(a), reference numeral 11 denotes a clamper that clamps the wire 4. This clamper is used, for example, to clamp the wire 4 when cutting the wire 4 with a cutter 12.

[0030] This wire bonding process uses the wedge bonding method, so a first bond is formed on the chip electrode 5 and a second bond is formed on the package electrode 6. This is to prevent the cutter 12 from coming into contact with the semiconductor element 3 and chip electrode 5 when cutting the wire 4, which could damage the semiconductor element 3, etc.

[0031] The wire 4a is formed as follows. First, to form a first bond on the chip electrode 5, the bonding tool 9 is moved over the chip electrode 5 of the semiconductor element 3 (FIG. 5(a)). When a predetermined load is applied to the bonding tool 9 to which ultrasonic vibrations have been applied, and pressure is applied to the wire 4, the wire 4 is crushed and one end of the wire 4 is bonded to the chip electrode 5. FIG. 5(b) schematically shows the bond (first bond) formed when the wire 4 is crushed on the chip electrode 5.

[0032] Thereafter, while feeding out the wire 4, the bonding tool 9 is raised and moved downward in FIG. 5(b), and when it reaches a predetermined height and a predetermined position, the wire 4 is clamped by the clamper 11. At the planned bend, the wire 4 is placed and fixed in the V-groove 13 of the bonding tool 9 (FIG. 6(a)). By moving the bonding tool 9 horizontally downward in FIG. 6(b), the wire 4 can be reliably placed and fixed in the V-groove 13. In this state, the bonding tool 9 is rotated 45 degrees counterclockwise. This rotation of the bonding tool 9 deforms the wire 4.

[0033] The clamp on the wire 4 by the clamper 11 is released, and the bonding tool 9 is lowered while feeding out the wire 4, and moved in the direction of the deformation (rotation) of the wire 4 (diagonal downward right direction in Figure 7). At a predetermined position on the package electrode 6, ultrasonic vibrations are applied to the bonding tool 9, and a predetermined load is applied to pressurize the wire 4, forming a bond (second bond) on the package electrode 6 as the wire 4 is crushed (Figure 7a). Figure 7b shows the wire 4 (4a) formed by cutting the wire after forming the second bond. When the wire 4 is connected to the chip electrode 5 and the package electrode 6, the deformation of the wire 4 formed in the area where the bend is to be formed becomes the bend 7.

[0034] The wire 4 thus formed has an upwardly convex loop structure between the junction with the chip electrode 5 and the junction with the package electrode 6, and the trajectory of the wire in plan view is changed at the bent portion 7. By moving and rotating the bonding tool 9 as described above, the wire 4a shown in FIGS. 1 and 2 can be formed. Similarly, by appropriately changing the direction of movement and rotation of the bonding tool 9, wires 4b to 4d can be formed. Note that the wires 4e and 4f shown in FIG. 2 can be simultaneously formed using a normal wire bonding method that does not form the bent portion 7.

[0035] The displacement-suppressing wires 4 formed by the above manufacturing method must be conditioned to avoid defects such as contact between wires or between the wire and the semiconductor element, just like wires formed by ordinary semiconductor device manufacturing methods. Therefore, the arrangement and size of the chip electrodes 5 and package electrodes 6, the length of the wires 4, etc. may be set appropriately. The extending direction of the wires 4, which changes depending on the shape of the bent portions 7, may also be set appropriately. Note that, since it is expected that the thicker the wires 4, the greater the effect of suppressing displacement, it is preferable to use thick wires 4 within the range in which the bent portions 7 can be formed.

[0036] Although one embodiment of the method for manufacturing a semiconductor device of the present invention has been described above, the present invention is not limited to this. For example, the method for bonding the semiconductor element 3 to the package substrate 1 and then separating the semiconductor element 3 from the package substrate 1 is not limited to bonding with a water-soluble resin and separation by dissolving and removing the water-soluble resin, but may be connection with a resin and separation by decomposition of the resin as previously disclosed by the present applicant.

[0037] Furthermore, when forming a wire that suppresses displacement, ball bonding can be used instead of wedge bonding. In this case, the first bond can be the package electrode and the second bond can be the chip electrode. Instead of fixing the wire to a bonding tool and deforming it by rotating the bonding tool, the bend can be formed by moving the capillary through which the wire passes to create a bend in the wire.

[0038] (summary) (1) One embodiment of the semiconductor device of the present invention comprises a package substrate having package electrodes on an upper surface thereof, a lid portion that combines with the package substrate to form a hollow package, and a semiconductor element having chip electrodes on an upper surface thereof, the package electrodes and the chip electrodes being connected only by a plurality of wires and being held separately from the package substrate within the hollow package, wherein the plurality of wires include at least two wires that form an upwardly convex loop between the junction with the chip electrode and the junction with the package electrode, with a bent portion at the apex that changes the trajectory of the wire in a planar view, and the bending direction of the bent portion in a planar view can be configured to be different between the wires.

[0039] According to the semiconductor device of the present invention, a bent portion is provided in the wire connecting the chip electrode of the semiconductor element and the package electrode on the package substrate, which changes the trajectory of the wire when viewed in a plane, and the wire forms a loop that is convex upward with the bent portion as its apex, thereby suppressing displacement of the semiconductor element.

[0040] (2) By arranging the bent portion on the semiconductor element in a planar view, the angle at which the wire rises from the chip electrode on the semiconductor element becomes steeper and rises in a shape that is closer to vertical, thereby shortening the distance from the semiconductor element to the bent portion and more effectively suppressing displacement of the semiconductor element.

[0041] (3) One embodiment of the method for manufacturing a semiconductor device of the present invention includes a wire connecting step of connecting chip electrodes on a semiconductor element bonded to a package substrate and package electrodes on the package substrate with a plurality of wires, a step of separating the semiconductor element from the package substrate, and a step of bonding a lid onto the package substrate to form a hollow package, wherein in the wire connecting step, at least two of the wires are formed by a step of bonding a wire to one of the chip electrodes or the package electrodes, forming a bent portion in the wire so as to change the trajectory of the wire in a planar view, and bonding the wire to the other of the chip electrodes or the package electrodes so as to form an upwardly convex loop with the bent portion as a vertex, and the bent portions are arranged so that the bending directions in a planar view of the bent portions differ from each other between the wires.

[0042] (4) The wire connection process is a process of joining a wire to the chip electrode, placing the clamped wire in a V-groove of a bonding tool at the intended bend portion of the wire, rotating the bonding tool to form the bend, and then unclamping the wire and lowering the bonding tool to join the wire to the package electrode, thereby easily forming the bend portion.

[0043] (5) The wire connection step is a step of forming the bent portion that is disposed on the semiconductor element in a plan view, thereby making it possible to more effectively suppress displacement of the semiconductor element.

[0044] (6) The process of separating the semiconductor element from the package substrate is a process of connecting the chip electrodes of the semiconductor element, which are adhered to the package substrate with a water-soluble resin, to the package electrodes with the wires, and then dissolving and removing the water-soluble resin, thereby making it possible to easily separate the semiconductor element from the package substrate without affecting the bent portion. [Explanation of symbols]

[0045] 1. Package substrate 2 lid 3. Semiconductor elements 4 wire 5 Tip Electrodes 6 Package electrode 7 Bend 8 Water-soluble resin 9 Bonding Tools 10 Guide 11 Clamper 12 Cutter 13 V groove 21 Package substrate 22 Resin 23 Semiconductor elements 24 wire 25 Lid 26 Metal Paste

Claims

1. a package substrate having a package electrode on an upper surface thereof; a lid portion that is combined with the package base material to form a hollow package; a semiconductor element having chip electrodes on an upper surface, the package electrodes and the chip electrodes being connected only by a plurality of wires, the semiconductor element being held in the hollow package separately from the package base; Equipped with the plurality of wires include at least two wires that form upwardly convex loops between the junctions with the chip electrodes and the junctions with the package electrodes, with a bent portion at the apex that changes the trajectory of the wire in a plan view; The bending directions of the bending portions in a plan view are different among the wires, the bent portion is disposed on the semiconductor element in a plan view. Semiconductor device.

2. a wire bonding step of connecting chip electrodes on the semiconductor element adhered to the package substrate and package electrodes on the package substrate with a plurality of wires; Separating the semiconductor device from the package substrate; bonding a lid onto the package substrate to form a hollow package; Including, In the wire connecting step, at least two of the wires are formed by a step of bonding a wire to one of the chip electrodes or the package electrodes, forming a bent portion in the wire so as to change the trajectory of the wire in a planar view, and bonding the wire to the other of the chip electrodes or the package electrodes so as to form a loop that is convex upward with the bent portion as a peak, and the wires are arranged so that the bending directions of the bent portions in a planar view are different from each other; The wire connecting step includes: a step of bonding a wire to the chip electrode, placing the clamped wire in a V-groove of a bonding tool at a portion of the wire where a bent portion is to be formed, rotating the bonding tool to form the bent portion, and then unclamping the wire and lowering the bonding tool to bond the wire to the package electrode; A method for manufacturing a semiconductor device.

3. A wire connection process for connecting chip electrodes on a semiconductor element adhered to a package substrate and package electrodes on the package substrate with a plurality of wires; Separating the semiconductor device from the package substrate; bonding a lid onto the package substrate to form a hollow package; Including, In the wire connecting step, at least two of the wires are formed by a step of bonding a wire to one of the chip electrodes or the package electrodes, forming a bent portion in the wire so as to change the trajectory of the wire in a planar view, and bonding the wire to the other of the chip electrodes or the package electrodes so as to form a loop that is convex upward with the bent portion as a peak, and the wires are arranged so that the bending directions of the bent portions in a planar view are different from each other; The wire connecting step includes: forming the bent portion disposed on the semiconductor element in a plan view; A method for manufacturing a semiconductor device.

4. The step of separating the semiconductor element from the package base includes: a step of connecting the chip electrodes of the semiconductor element adhered to the package base with a water-soluble resin and the package electrodes with the wires, and then dissolving and removing the water-soluble resin; 4. The method for manufacturing a semiconductor device according to claim 2 or 3.

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