Wafer support plate and semiconductor manufacturing device equipped with same

Abstract

To provide a wafer support body that is movable inside the same chamber after deposition on a wafer and is capable of processing on the wafer after the deposition, and a semiconductor manufacturing device including the same.SOLUTION: A wafer support plate 10 of the present invention comprises a flat part 1 that supports a wafer W, and an outer peripheral projection 2 that is arranged in circle on the outer periphery of the flat part 1, and is formed thicker than the wafer W. The flat part 1 is formed of a holed support part 1A, and an annular support part 1B that is arranged outside the holed support part 1A and supports an outer peripheral end Wo of the wafer W.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a wafer support plate and a semiconductor manufacturing apparatus equipped with the same. [Background technology]

[0002] 2. Description of the Related Art In a conventional film formation apparatus for forming a plurality of types of films, a chamber is provided for each process step using different film formation materials or conditions, and a wafer is transported to the chamber for film formation.

[0003] A wafer is heated using a heater pedestal, and a metal film is formed by a film formation method such as sputtering. After film formation is completed, the wafer is transferred to another process chamber to continue film formation, or the wafer is cooled by a cooling process as needed. For example, when growing multiple types of films by sputtering, the wafer is often transferred to multiple chambers and film formation is performed in each chamber, and the process chambers, including the wafer transfer chamber, are maintained at a high vacuum to prevent oxidation of the metal film.

[0004] Various structures for supporting a wafer are known (for example, Patent Documents 1 to 10). For example, the wafer support structure disclosed in Patent Document 1 is characterized by a structure for supporting the side surface and the outer peripheral back surface of the wafer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-182009 [Patent Document 2] Japanese Patent Application Laid-Open No. 2000-286328 [Patent Document 3] Japanese Patent Application Publication No. 2017-228705 [Patent Document 4] Japanese Patent Application Laid-Open No. 2016-207932 [Patent Document 5] International Publication No. 2016 / 174860 [Patent Document 6] Japanese Patent Publication No. 2020-107857 [Patent Document 7] Japanese Patent Publication No. 2021-153122 [Patent Document 8] Japanese Patent Application Publication No. 6-132231 [Patent Document 9] Japanese Patent Application Publication No. 10-107126 [Patent Document 10] Japanese Patent Application Laid-Open No. 2005-15820 Summary of the Invention [Problem to be solved by the invention]

[0006] In a high vacuum, thermal conductivity is low, and the temperature of the wafer after film deposition is generally maintained at the time of film deposition. Therefore, if transport takes a long time, the thermal history of the metal film deposited on the wafer becomes long, and in the case of metal films with low heat resistance, the film shape changes or the film quality deteriorates.

[0007] The wafer support structure disclosed in Patent Document 1 does not have a structure for supporting the backside of the wafer. Furthermore, although a protrusion is provided on the outer periphery, it is not circular and its height (thickness) is lower than the wafer. Therefore, it is not possible to form a closed space between the wafer support structure and the inner wall of the chamber. Even if the outer periphery of this wafer support structure were made movable as an independent wafer support structure and a closed space could be formed between the wafer support structure and the inner wall of the chamber in some way, the force applied when a pressure difference occurs between the front and back sides of the wafer would be concentrated on the outer periphery of the wafer, increasing the probability of wafer damage.

[0008] The present invention has been made in consideration of the above circumstances, and has an object to provide a wafer support that is movable within the same chamber after a process is performed on a wafer and that has a configuration that enables temperature adjustment of the wafer after the process, and a semiconductor manufacturing apparatus equipped with the same. [Means for solving the problem]

[0009] In order to solve the above problems, the present invention provides the following means.

[0010] A first aspect of the present invention is a wafer support plate comprising a flat portion for supporting a wafer and a peripheral convex portion arranged around the outer periphery of the flat portion and formed thicker than the wafer, the flat portion comprising a perforated support portion and an annular support portion arranged outside the perforated support portion and supporting the outer peripheral edge of the wafer.

[0011] A second aspect of the present invention is the wafer support plate of the first aspect, wherein the outer peripheral convex portion is formed with a gas introduction pipe that communicates from the upper surface to the inner peripheral side wall.

[0012] A third aspect of the present invention is the wafer support plate of the first or second aspect, wherein the perforated support portion is made of a linear portion and has a linear pattern symmetrical with respect to the center of the flat portion.

[0013] A fourth aspect of the present invention is a wafer support plate according to any one of the first to third aspects, wherein the perforated support portion has a ring-shaped portion whose circular center is the center of the flat portion, and radial portions extending radially in lines from the ring-shaped portion to the annular support portion.

[0014] A fifth aspect of the present invention is a wafer support plate according to any one of the first to third aspects, wherein the perforated support portion comprises a radial portion extending linearly from the center of the flat portion to the annular support portion.

[0015] A sixth aspect of the present invention is a wafer support plate according to any one of the first to third aspects, wherein the perforated support portion has radial portions extending linearly from the center of the flat portion to the annular support portion, and a plurality of ring-shaped portions arranged concentrically with the center of the flat portion as the center of the concentric circles.

[0016] A seventh aspect of the present invention is a wafer support plate according to any one of the first to third aspects, wherein the perforated support portion has a ring-shaped portion with the center of the flat portion as its circular center, a radial portion extending radially and linearly from the ring-shaped portion to the annular support portion, and a non-radial portion extending non-radially and linearly from the ring-shaped portion to the annular support portion.

[0017] An eighth aspect of the present invention is the wafer support plate of any one of the first to seventh aspects, wherein the perforated support portion comprises a linear portion having a width of 3 mm or more and 30 mm or less.

[0018] A ninth aspect of the present invention is a wafer support plate according to any one of the first to eighth aspects, wherein the outer peripheral convex portion comprises a gas introduction pipe consisting of a gas introduction hole provided on the top surface, a gas discharge hole provided on the inner peripheral side wall, and a gas flow path connecting the gas introduction hole and the gas discharge hole.

[0019] A tenth aspect of the present invention is the wafer support plate of the ninth aspect, wherein the gas flow path is arranged in a circular shape within the outer circumferential convex portion.

[0020] An eleventh aspect of the present invention is the wafer support plate of the ninth or tenth aspect, wherein the gas introduction pipe has a plurality of the gas release holes arranged at a distance from each other.

[0021] A twelfth aspect of the present invention is the wafer support plate of any one of the first to eleventh aspects, wherein the wafer support plate is made of a heat-resistant material having a melting point of 500° C. or higher.

[0022] A thirteenth aspect of the present invention is the wafer support plate of the twelfth aspect, wherein the heat-resistant material comprises any one of SUS, Ti alloy, Ni alloy, Co alloy, Ta alloy, and Mo alloy, or a combination thereof.

[0023] A fourteenth aspect of the present invention is a semiconductor manufacturing apparatus comprising a wafer support plate according to any one of aspects one to thirteen, a heater stage having a support surface on which a wafer is placed and on which a groove pattern is formed, a moving mechanism for moving the wafer support plate in an up and down direction, a chamber for accommodating the wafer support plate and the heater stage, and a gas supply pipe provided on the outer wall of the chamber, wherein a portion of the perforated support portion of the wafer support plate is accommodated within the groove pattern.

[0024] A fifteenth aspect of the present invention is the semiconductor manufacturing apparatus of the fourteenth aspect, wherein the gas supply pipe also serves as a gas exhaust pipe.

[0025] A sixteenth aspect of the present invention relates to the semiconductor manufacturing apparatus of the fourteenth aspect, further comprising a gas exhaust pipe provided on the outer wall of the chamber.

[0026] A seventeenth aspect of the present invention is the semiconductor manufacturing apparatus of the fourteenth aspect, further comprising support pins for supporting the outer peripheral convex portion, and the moving mechanism moves the support pins up and down to move the wafer support plate in the up and down direction.

[0027] According to an eighteenth aspect of the present invention, in the semiconductor manufacturing apparatus of the seventeenth aspect, the support pins support the outer peripheral convex portion from a lower surface of the outer peripheral convex portion.

[0028] A nineteenth aspect of the present invention is the semiconductor manufacturing apparatus of the seventeenth aspect, wherein the support pins support the outer peripheral convex portion from an upper surface of the outer peripheral convex portion.

[0029] A 20th aspect of the present invention is a semiconductor manufacturing apparatus according to Aspect 17, wherein the support pin has a first portion that protrudes from the outer peripheral side surface of the outer peripheral convex portion and a second portion that is connected to the first portion and extends upward, and the support pin supports the outer peripheral convex portion. [Effects of the Invention]

[0030] According to the wafer support of the present invention, it is possible to provide a wafer support that is movable within the same chamber after a process is performed on the wafer and that has a configuration that allows for temperature adjustment of the wafer after the process. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 2(a) is a plan view showing a schematic configuration of a wafer support plate according to the first embodiment, and FIG. 2(b) is a cross-sectional view of the wafer support plate shown in FIG. 2(a) taken along line XX. [Figure 2] 1A is a schematic plan view of a wafer and a wafer support plate before the wafer is placed thereon, and FIG. 1B is a schematic plan view of the wafer support plate with the wafer placed thereon. [Figure 3] 1. FIG. 4 is a schematic plan view showing a schematic configuration of a modified example of the wafer support plate shown in FIG. [Figure 4] 1. FIG. 4 is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. [Figure 5] 1. FIG. 4 is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. [Figure 6] 10(a) is a plan view showing a schematic configuration of a wafer support plate according to a second embodiment, and FIG. 10(b) is a cross-sectional view of the wafer support plate shown in FIG. 10(a) taken along line XX. [Figure 7] 7(a) is a schematic plan view showing the schematic configuration of a modified example of the wafer support plate shown in FIG. 6, and (b) is a schematic plan view showing the schematic configuration of another modified example different from (a). [Figure 8] 6A is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. 6; FIG. 6B is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. 6; and FIG. 6C is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. 6. [Figure 9] 1A and 1B are cross-sectional schematic diagrams showing the general configuration of a semiconductor manufacturing apparatus according to a first embodiment, in which (a) shows the arrangement during film formation, and (b) shows the arrangement during cooling of a wafer W. [Figure 10] 1A is a schematic plan view of the wafer support before it is placed on the heater pedestal, and FIG. 1B is a schematic plan view of the wafer support after it has been placed on the heater pedestal. [Figure 11] (a) is a plan view schematic diagram showing the general configuration of another modified example of the heater stand shown in Figure 10, (b) is a plan view schematic diagram showing the general configuration of another modified example different from (a), and (c) is a plan view schematic diagram showing the general configuration of yet another modified example different from (a). [Figure 12] 10A and 10B are cross-sectional schematic diagrams showing the general configuration of a semiconductor manufacturing apparatus according to a second embodiment, in which (a) shows the arrangement during film formation, and (b) shows the arrangement during cooling of a wafer W. [Figure 13] 1A is a schematic plan view of the wafer support before it is placed on the heater pedestal, and FIG. 1B is a schematic plan view of the wafer support after it has been placed on the heater pedestal. [Figure 14] (a) is a plan view schematic diagram showing the general configuration of another modified example of the heater stand shown in Figure 13, (b) is a plan view schematic diagram showing the general configuration of another modified example different from (a), and (c) is a plan view schematic diagram showing the general configuration of yet another modified example different from (a). [Figure 15] 10A and 10B are cross-sectional schematic diagrams showing the general configuration of a semiconductor manufacturing apparatus according to a third embodiment, in which (a) shows the arrangement during film formation, and (b) shows the arrangement during cooling of a wafer W. [Figure 16] 10A and 10B are cross-sectional schematic diagrams showing the general configuration of another example of a semiconductor manufacturing apparatus according to the third embodiment, where (a) shows the arrangement during film formation, and (b) shows the arrangement during cooling of the wafer W. [Figure 17] 16(a) is a schematic plan view showing the arrangement relationship between support pins, lift pins, and forks in the semiconductor manufacturing apparatus shown in FIG. 15, and FIG. 16(b) is a schematic plan view showing the arrangement relationship between support pins, lift pins, and forks in the semiconductor manufacturing apparatus shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0032] The present invention will be described in detail below with reference to the drawings as appropriate. The drawings used in the following description may show characteristic portions enlarged for the sake of clarity, and the dimensional proportions of each component may differ from the actual dimensions. The dimensions and other details exemplified in the following description are merely examples, and the present invention is not limited thereto. Appropriate changes can be made within the scope of the effects of the present invention. Hereinafter, even if not specifically explained, the configuration described in one embodiment may be applied to other embodiments.

[0033] [Wafer support plate] (First embodiment) Fig. 1(a) shows a schematic plan view illustrating the general configuration of a wafer support plate according to the first embodiment, and Fig. 1(b) shows a schematic cross-sectional view of the wafer support plate shown in Fig. 1(a) taken along line XX. Fig. 2(a) shows a schematic plan view of a wafer and the wafer support plate before the wafer is placed on it, and Fig. 2(b) shows a schematic plan view of the wafer support plate with the wafer placed on it.

[0034] The wafer support plate 10 shown in Figure 1 comprises a flat portion 1 that supports the wafer W, and a peripheral convex portion 2 that is arranged around the outer periphery of the flat portion 1 and is thicker than the wafer W. The flat portion 1 comprises a perforated support portion 1A and an annular support portion 1B that is arranged outside the perforated support portion 1A and supports the outer peripheral edge Wo of the wafer W.

[0035] The wafer support plate according to the present invention is a component used in semiconductor manufacturing equipment having a heater pedestal for heating wafers. The wafer support plate according to the present invention is configured so that a portion of the wafer support plate is accommodated in a groove formed in the mounting surface of the heater pedestal after the wafer W is placed on the heater pedestal during film formation, allowing it to be separated from the wafer W. The wafer support plate according to the present invention is configured so that, when cooling the wafer W after film formation, it can form a closed space that can hold a cooling gas inside together with the inner wall of the chamber during film formation and the wafer W.

[0036] <Flat area> The flat portion 1 is the inner portion W of the wafer W.i The support part 1A has a hole on which the inner part W is placed. i The flat portion 1 has a shape similar to that of the wafer W in plan view, and is circular in the case of a circular wafer W. The perforated support portion 1A is also circular, and the annular support portion 1B is annular. The flat portion 1 has a support function for supporting the wafer W, a storage function for storing a portion of the wafer W in a groove formed on the mounting surface of the heater table during film formation, and a closing function for forming a closed space together with the inner wall of the chamber, the outer peripheral convex portion, and the wafer W when processing the wafer W after film formation (e.g., cooling, heating, etc.). The support function of the flat portion 1 is performed by the perforated support portion 1A and the annular support portion 1B, the accommodation function is performed by the perforated support portion 1A, and the closing function is mainly performed by the annular support portion 1B. Examples of temperature adjustment processing of the wafer W after film formation include cooling after high-temperature film formation. Other examples include heating processing after low-temperature film formation and returning to room temperature after processing at extremely low temperatures. Therefore, the temperature adjustment processing of the wafer W is not limited to cooling after high-temperature film formation. In the following, the temperature adjustment process of the wafer W after film formation will be mainly described by taking cooling after high-temperature film formation as an example.

[0037] The thickness of the flat portion 1 can be set to, for example, 3 mm or more and 30 mm or less.

[0038] The perforated support part is a member having a perforated portion, and a portion that fits into a groove of a groove pattern (groove pattern) formed on the wafer mounting surface of the heater pedestal. The perforated support part 1A has the above-mentioned fitting function by having a portion that fits into the groove of the groove pattern on the mounting surface of the heater pedestal. Therefore, the pattern of the portion of the perforated support part 1A that fits into the groove is determined according to the groove pattern on the wafer mounting surface of the heater pedestal to be used.

[0039] The perforated support part 1A shown in Figure 1 is a linear support part consisting only of linear parts. As long as it satisfies the above-mentioned storage function, the perforated support part 1A may have parts that are not linear (non-linear parts). When the perforated support part 1A is a linear support part consisting only of linear parts, it preferably has a linear pattern that is symmetrical with respect to the center O of the flat part. The following describes, with reference to the drawings, the case where the perforated support part 1A is a linear support part. Note that in this specification, the intersection of linear parts (for example, dotted part 21AA in FIG. 4 and dotted part 31AA in FIG. 5) is not included in the non-linear part. Therefore, the perforated support part 21A shown in FIG. 4 and the perforated support part 31A shown in FIG. 5 are linear support parts.

[0040] The perforated support part 1A has a ring-shaped part 1AA whose circular center is the center O of the flat part 1, and eight radial parts 1Aa, 1Ab, 1Ac, 1Ad, 1Ae, 1Af, 1Ag, and 1Ah that extend radially from the ring-shaped part 1AA to the annular support part 1B. The perforated support part 1A shown in Fig. 1(a) has eight radial parts, but eight is an example, and the number may be seven or less or nine or more. The eight radial portions are configured as four pairs of two radial portions (radial portions 1Aa and 1Ae, radial portions 1Ab and 1Af, radial portions 1Ac and 1Ag, and radial portions 1Ad and 1Ah) that are arranged diametrically symmetrically with respect to the center O of the circle. In the perforated support portion 1A, the arrangement of the radial portions is symmetrical, but is not limited to a symmetrical configuration. Here, in this specification, the term "radial" refers to a state in which multiple lines extend linearly around a single center point, and includes both cases in which the multiple lines extend from the center as a starting point and cases in which the multiple lines extend from various locations away from the center. The eight radial portions 1Aa, 1Ab, 1Ac, 1Ad, 1Ae, 1Af, 1Ag, and 1Ah extend linearly around the center O of the flat portion 1, starting from various locations on the ring-shaped portion 1AA that are distant from the center O. All eight radial portions are arranged on straight lines extending from the center O of the flat portion 1 to the periphery, and extend "radially."

[0041] The width of the hole-opening support portion 1A can be, for example, 3 mm or more and 30 mm or less.

[0042] The annular support portion 1B is formed continuously in a circular shape. "Continuously" means that there are no discontinuous or intermittent portions and it continues without interruption. This is for exerting the closing function.

[0043] The thickness of the annular support portion 1B is preferably constant. This is for surely exerting the closing function and for enabling a longer service life compared to the case where there is a portion with a non-constant thickness. The width of the annular support portion 1B can be, for example, 2 mm or more and 100 mm or less.

[0044] As shown in Fig. 1(a), the width w1 of the annular support portion 1B is preferably constant. This is for enabling a longer service life compared to the case where there is a portion with a non-constant width.

[0045] The outer diameter R1 and the inner diameter R2 of the annular support portion 1B are set to have the relationship of R2 < Rw < R1 with the diameter Rw of the wafer W. In order to form a closed space together with the inner wall of the chamber, the outer peripheral convex portion, and the wafer W, it is necessary that the hole-opening support portion 1A cannot be seen when viewed from the direction (Z direction) in which the wafer W and the flat portion 1 overlap. When the hole-opening support portion 1A can be seen, there will be a gap when viewed from the overlapping direction, and a closed space cannot be formed.

[0046] Also, in order that no gap is formed even when the wafer W is displaced, it is preferable that the outer diameter R1 and the inner diameter R2 of the annular support portion 1B have the relationship of the following formula (1) with the diameter Rw of the wafer W.

[0047]

Equation

[0048] <Outer peripheral convex portion> 1(b) shows a state in which a wafer W is placed on a wafer support plate 10. In addition, in a semiconductor manufacturing apparatus described later, in order to show that a closed space K is formed by the wafer support plate 10 and an inner wall 50A of the chamber 50 when the wafer W is cooled after film formation, the chamber 50 is shown by a dotted line to show the arrangement of the wafer support plate 10 and the chamber 50.

[0049] The outer peripheral protrusion 2 has a closing function of forming a closed space together with the inner wall of the chamber and the wafer W when cooling the wafer W. Specifically, the outer peripheral protrusion 2 can form a closed space K with the wafer W accommodated inside by bringing its upper surface 2A into contact with the inner wall 50A of the chamber 50 when cooling the wafer W. In order to fulfill this function, the outer peripheral protrusion 2 is formed continuously and circumferentially.

[0050] Furthermore, the outer peripheral protrusion 2 has a function of securing a storage space for storing the wafer W in the closed space K so that the wafer W does not come into contact with the inner wall 50A of the chamber 50 when the upper surface 2A of the outer peripheral protrusion 2 is in contact with the inner wall 50A of the chamber 50 during cooling of the wafer W. For this purpose, the thickness t2 of the outer peripheral protrusion 2 is set to be smaller than the thickness t of the wafer W. w It is formed thicker than Wafer W thickness t w is usually 0.8 mm or less, so the thickness t2 of the outer peripheral convex portion 2 is 2 mm or more. The thickness t2 of the outer peripheral convex portion 2 is preferably 5 to 60 mm.

[0051] The width of the outer peripheral protrusion 2 can be, for example, 5 mm or more and 100 mm or less.

[0052] In order to improve the airtightness between the upper surface 2A of the outer peripheral convex portion 2 and the inner wall 50A of the chamber 50, for example, a groove may be formed and a known member for improving airtightness, such as an O-ring, may be installed.

[0053] As will be described later, the wafers W placed in the closed space K can be cooled by introducing a cooling gas into the closed space K. In addition, the cooling efficiency can be improved by providing a cooling section that uses a refrigerant (e.g., cooling water) to cool the outer wall 50B of the chamber 50 near the inner wall 50A where the closed space K is formed. In addition to cooling, if the wafers are at a low temperature after processing, they can be heated by a heater or returned to room temperature depending on the application, by employing the necessary components.

[0054] The wafer support plate 10 is preferably heat-resistant so that it can be used in semiconductor manufacturing equipment during metal film deposition. The wafer support plate 10 is preferably made of a heat-resistant material with a melting point of 500°C or higher, for example. Examples of such heat-resistant materials include materials selected from the group consisting of SUS, Ti alloys, Ni alloys, Co alloys, Ta alloys, and Mo alloys. It is also possible to use a combination of the materials exemplified as heat-resistant materials.

[0055] The wafer support plate 10 may be constructed such that the flat portion 1 and the outer peripheral convex portion 2 are separate and joined together by a known method, or may be integrally formed by casting, forging, cutting, or the like.

[0056] (Variation 1) FIG. 3 is a schematic plan view showing a schematic configuration of a modified example of the wafer support plate shown in FIG. The wafer support plate shown in FIG. 3 differs from the wafer support plate shown in FIG. 1 in the configuration of the flat portion. Hereinafter, components common to those of the wafer support plate shown in Fig. 1 will be assigned the same reference numerals and their description will be omitted. Also, descriptions of features common to the flat portion of the wafer support plate shown in Fig. 1 will be omitted.

[0057] 3 has a flat portion 11 that supports the wafer W, and an outer peripheral protrusion 2 that is arranged around the outer periphery of the flat portion 11 and is thicker than the wafer W, and the flat portion 11 has a holed support portion 11A and an annular support portion 1B that is arranged outside the holed support portion 11A and supports the outer peripheral edge Wo of the wafer W, in common with the wafer support plate 10 shown in Fig. 1. The holed support portion 11A also has a ring-shaped portion 11AA whose circular center is the center O of the flat portion 11, and radial portions that extend linearly radially from the ring-shaped portion 11AA to the annular support portion 1B, in common with the wafer support plate 10 shown in Fig. 1. 1 in that the perforated support portion 11A has non-radial portions that extend linearly from the ring-shaped portion 11AA to the annular support portion 1B. That is, the eight radial portions 11Aab, 11Ab, 11Acb, 11Ad, 11Aeb, 11Af, 11Agb, and 11Ah are arranged on lines that extend radially from the center O of the flat portion 11, whereas the eight non-radial portions 11Aaa, 11Aac, 11Aca, 11Acc, 11Aea, 11Aec, 11Aga, and 11Agc are not arranged on lines that extend radially from the center O of the flat portion 11. Non-radial portions 11Aaa and 11Aac extend parallel to radial portion 11Aab, non-radial portions 11Aca and 11Acc extend parallel to radial portion 11Acb, non-radial portions 11Aea and 11Aec extend parallel to radial portion 11Aeb, and non-radial portions 11Aga and 11Agc extend parallel to radial portion 11Agb. The eight radial portions are configured as four pairs of two radial portions (radial portions 11Aab and 11Aeb, radial portions 11Ab and 11Af, radial portions 11Acb and 11Agb, and radial portions 11Ad and 11Ah) that are arranged diametrically symmetrically with respect to the center O of the circle. In contrast, the eight non-radial portions are configured as four pairs of two radial portions (non-radial portions 11Aaa and 11Aec, non-radial portions 11Aac and 11Aea, non-radial portions 11Aca and 11Agc, and non-radial portions 11Acc and 11Aga) that are arranged on a straight line that does not pass through the center O of the circle.

[0058] The perforated support portion 11A shown in Figure 3 has eight radial portions and eight non-radial portions, but eight is an example and the number may be seven or less or nine or more, and the number of radial portions and non-radial portions may be different.

[0059] (Variation 2) FIG. 4 is a schematic plan view showing the general configuration of another modified example of the wafer support plate shown in FIG. The wafer support plate shown in FIG. 4 differs from the wafer support plate shown in FIG. 1 in the configuration of the flat portion. Hereinafter, components common to those of the wafer support plate shown in Fig. 1 will be assigned the same reference numerals and their description will be omitted. Also, descriptions of features common to the flat portion of the wafer support plate shown in Fig. 1 will be omitted.

[0060] The wafer support plate 10B shown in FIG. 4 includes a flat portion 21 that supports the wafer W, and a peripheral convex portion 2 that is arranged around the outer periphery of the flat portion 21 and is thicker than the wafer W. The flat portion 21 is similar to the wafer support plate 10 shown in FIG. 1 in that it includes a perforated support portion 21A and an annular support portion 1B that is arranged outside the perforated support portion 21A and supports the outer peripheral edge Wo of the wafer W. On the other hand, the perforated support portion 21A does not have a ring-shaped portion, but instead has a dot-shaped portion 21AA at the center O of the flat portion 21 and radial portions extending linearly from the dot-shaped portion 21AA to the annular support portion 1B. That is, the radial portions 21Aa, 21Ab, 21Ac, 21Ad, 21Ae, 21Af, 21Ag, and 21Ah are arranged on lines extending radially from the center O of the flat portion 21. The eight radial portions are configured as four pairs of two radial portions arranged at diametrically symmetric positions with respect to the center O of the circle (radial portions 21Aa and 21Ae, radial portions 21Ab and 21Af, radial portions 21Ac and 21Ag, and radial portions 21Ad and 21Ah).

[0061] The perforated support portion 21A shown in FIG. 4 has eight radial portions, but eight is an example and the number may be seven or less or nine or more.

[0062] (Variation 3) FIG. 5 is a schematic plan view showing a schematic configuration of a modified example of the wafer support plate shown in FIG. The wafer support plate shown in FIG. 5 differs from the wafer support plate shown in FIG. 1 in the configuration of the flat portion. Hereinafter, components common to those of the wafer support plate shown in Fig. 1 will be assigned the same reference numerals and their description will be omitted. Also, descriptions of features common to the flat portion of the wafer support plate shown in Fig. 1 will be omitted.

[0063] The wafer support plate 10C shown in FIG. 5 includes a flat portion 31 that supports the wafer W, and a peripheral convex portion 2 that is arranged around the outer periphery of the flat portion 31 and is thicker than the wafer W. The flat portion 31 is similar to the wafer support plate 10 shown in FIG. 1 in that it includes a perforated support portion 31A and an annular support portion 1B that is arranged outside the perforated support portion 31A and supports the outer peripheral edge Wo of the wafer W. On the other hand, the perforated support portion 31A has a point-like portion 31AA at the center O of the flat portion 31, ring-like portions 31AB and 31AC arranged concentrically with the center O as the center of the concentric circle, and radial portions extending linearly from the point-like portion 31AA to the annular support portion 1B. The radial portions 31Aa, 31Ab, 31Ac, 31Ad, 31Ae, 31Af, 31Ag, and 31Ah are arranged on lines extending radially from the center O of the flat portion 31. The eight radial portions are configured as four pairs of two radial portions arranged at diametrically symmetric positions with respect to the center O of the circle (radial portions 31Aa and 31Ae, radial portions 31Ab and 31Af, radial portions 31Ac and 31Ag, and radial portions 31Ad and 31Ah).

[0064] The perforated support portion 31A shown in FIG. 5 has eight radial portions, but eight is an example and the number may be seven or less or nine or more. Furthermore, the perforated support portion 31A shown in FIG. 5 is configured with two ring-shaped portions, but two is an example and the number of ring-shaped portions may be one or three or more.

[0065] (Second embodiment) FIG. 6(a) is a plan view showing the general configuration of a wafer support plate according to the second embodiment, and (b) is a cross-sectional view of the wafer support plate shown in (a) taken along line XX.

[0066] The wafer support plate according to the second embodiment is mainly different from the wafer support plate according to the first embodiment in that the outer peripheral convex portion is provided with a gas introduction pipe. Hereinafter, components common to the wafer support plate according to the first embodiment will be denoted by the same reference numerals and their description will be omitted.

[0067] The wafer support plate according to the second embodiment is configured such that the outer peripheral convex portion is equipped with a gas introduction pipe, and therefore after forming a closed space together with the inner wall of the chamber and the wafer W, cooling gas can be introduced into the closed space from a gas supply pipe provided on the outer wall of the chamber through the gas introduction pipe on the outer peripheral convex portion to cool the wafer W.

[0068] The wafer support plate 20 shown in FIG. 6 comprises a flat portion 1 that supports the wafer W, and an outer peripheral convex portion 12 that is arranged around the outer periphery of the flat portion 1 and is thicker than the wafer W. The flat portion 1 comprises a perforated support portion 1A and an annular support portion 1B that is arranged outside the perforated support portion 1A and supports the outer portion Wo of the wafer W. The outer peripheral convex portion 12 has a gas inlet pipe 12a that consists of a gas inlet hole 12aa provided in the upper surface 12A, a gas discharge hole 12ab provided in the inner peripheral side wall 12B, and a gas flow path 12ac that connects the gas inlet hole 12aa and the gas discharge hole 12ab. The gas flow path may be configured to connect the gas inlet and gas release holes without going around the outer peripheral convex portion as shown in Figure 6(b), or may be configured to connect the gas inlet and gas release holes after going around the outer peripheral convex portion as shown in Figures 7(a) and (b).

[0069] The wafer support plate 20 shown in Figure 6 has a flat portion having the same configuration as the wafer support plate 10 shown in Figure 1, but it may also have a flat portion having the configuration shown in any of Figures 3 to 5.

[0070] (Variations 1 and 2) Figures 7(a) and (b) are schematic plan views showing the general configuration of a modified example of the wafer support plate shown in Figure 6. The modified example shown in Figures 7(a) and (b) differs from the wafer support plate 20 shown in Figure 6 in the configuration of the gas introduction pipe, specifically, the length of the gas flow path and the number of gas release holes. Hereinafter, components common to those of the wafer support plate shown in Fig. 6 will be assigned the same reference numerals and their description will be omitted. Also, descriptions of features common to the flat portion of the wafer support plate shown in Fig. 6 will be omitted.

[0071] A wafer support plate 20A as modified example 1 shown in Figure 7(a) comprises a flat portion 1 that supports a wafer W, and an outer peripheral convex portion 22 that is arranged around the outer periphery of the flat portion 1 and is formed thicker than the wafer W. The flat portion 1 comprises a perforated support portion 1A and an annular support portion 1B that is arranged outside the perforated support portion 1A and supports the outer peripheral edge Wo of the wafer W. The outer peripheral convex portion 22 has a gas introduction pipe 22a that consists of a gas introduction hole 22aa provided in an upper surface 22A, four gas release holes 22ab1, 22ab2, 22ab3, and 22ab4 provided in an inner peripheral side wall, and a gas distribution path 22ac that connects the gas introduction hole 22aa and the gas release holes 22ab1, 22ab2, 22ab3, and 22ab4. In the drawing, the gas flow paths 22ac arranged inside the outer peripheral protrusion 22 are not actually visible, but are shown by dotted lines to show the arrangement.

[0072] In the wafer support plate 20A shown in FIG. 7(a), the gas flow path 22ac is formed in a circular shape around the entire circumference of the outer peripheral convex portion 22, and gas can be introduced through four gas release holes 22ab1, 22ab2, 22ab3, and 22ab4 arranged at equal intervals.

[0073] 7(a) has four gas release holes, but four is an example and the number may be three or less or five or more. Any number of gas release holes may be arranged at any location on the gas distribution path 22ac at equal or non-equidistant intervals.

[0074] A wafer support plate 20B as modified example 2 shown in Figure 7(b) comprises a flat portion 1 that supports the wafer W, and an outer peripheral convex portion 32 that is arranged around the outer periphery of the flat portion 1 and is thicker than the wafer W. The flat portion 1 comprises a perforated support portion 1A and an annular support portion 1B that is arranged outside the perforated support portion 1A and supports the outer peripheral edge Wo of the wafer W. The outer peripheral convex portion 32 has a gas inlet hole 32aa provided in the upper surface 32A, three gas release holes 32ab1, 32ab2, 32ab3 provided in the inner peripheral side wall, and a gas inlet pipe 32a consisting of a gas distribution path 32ac that connects the gas inlet hole 32aa and the gas release holes 32ab1, 32ab2, 32ab3. Although the gas flow paths 32ac arranged inside the outer peripheral protrusion 32 are not actually visible, they are shown in the figure by dotted lines to show the arrangement.

[0075] In the wafer support plate 20B shown in FIG. 7(b), the gas flow path 32ac is formed in a circular shape around approximately 3 / 4 of the circumference of the outer circumferential protrusion 32, and gas can be introduced through three gas release holes 32ab1, 32ab2, and 32ab3. The length of extension of the gas flow path 32ac is 3 / 4 of a circumference, but it may be formed to any length less than one circumference.

[0076] 7(b), the gas discharge holes are provided at three locations (three holes provided) at the leading end and trailing end of the gas distribution path 32ac and in between, but three holes are provided as an example and the number may be two or less or four or more. Also, any number of gas discharge holes may be arranged at any location of the gas distribution path 32ac at equal or non-equidistant intervals.

[0077] (Variations 3 to 5) Figures 8(a) to 8(c) are schematic plan views showing the general configuration of other modified examples of the wafer support plate shown in Figure 6. The modified examples shown in Figures 8(a) to 8(c) differ in the configuration of the flat portion from the wafer support plate 20 shown in Figure 6. Furthermore, each modified example may also differ in the configuration of the gas introduction pipe. Hereinafter, components common to those of the wafer support plate shown in Fig. 6 will be assigned the same reference numerals and their description will be omitted. Also, descriptions of features common to the flat portion of the wafer support plate shown in Fig. 6 will be omitted.

[0078] The wafer support plate 20C of modified example 3 shown in Figure 8(a) comprises a flat portion 11 that supports the wafer W, and an outer peripheral convex portion 42 that is arranged around the outer periphery of the flat portion 11 and is formed thicker than the wafer W, and the flat portion 11 comprises a perforated support portion 11A and an annular support portion 1B that is arranged outside the perforated support portion 11A and supports the outer peripheral end Wo of the wafer W. The perforated support portion 11A has a ring-shaped portion 11AA whose circular center is the center O of the flat portion 11, radial portions 11Aab, 11Ab, 11Acb, 11Ad, 11Aeb, 11Af, 11Agb and 11Ah that extend radially and linearly from the ring-shaped portion 11AA to the annular support portion 1B, and non-radial portions 11Aaa, 11Aac, 11Aca, 11Acc, 11Aea, 11Aec, 11Aga and 11Agc that extend non-radially and linearly from the ring-shaped portion 11AA to the annular support portion 1B.

[0079] The perforated support portion 11A shown in Figure 8(a) has eight radial portions and eight non-radial portions, but eight is an example and the number may be seven or less or nine or more, and the number of radial portions and non-radial portions may be different.

[0080] The outer peripheral convex portion 42 has a gas inlet pipe 42a consisting of a gas inlet hole 42aa provided in the upper surface 42A, a gas discharge hole (not shown) provided in the inner peripheral side wall, and a gas distribution path (not shown) that connects the gas inlet hole 42aa and the gas discharge hole (not shown). The gas distribution path may be configured to connect the gas inlet hole and the gas discharge hole without going around the outer peripheral convex portion as shown in Figure 6(b), or may be configured to connect the gas inlet hole and the gas discharge hole after going around the outer peripheral convex portion as shown in Figures 7(a) and 7(b). The gas introduction pipe 42a may be formed in a circumferential shape around the entire circumference of the outer circumferential protrusion 42, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7a). The gas introduction pipe 42a may be formed in a circular shape over any length less than one circumference of the outer circumferential protrusion 42, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7b).

[0081] 8(b) includes a flat portion 21 that supports a wafer W, and an outer peripheral protrusion 52 that is arranged around the outer periphery of the flat portion 21 and is thicker than the wafer W. The flat portion 21 includes a perforated support portion 21A and an annular support portion 1B that is arranged outside the perforated support portion 21A and supports the outer peripheral edge Wo of the wafer W. The perforated support portion 21A does not have a ring-shaped portion, but instead has a dot-like portion 21AA at the center O of the flat portion 21, and radial portions 21Aa, 21Ab, 21Ac, 21Ad, 21Ae, 21Af, 21Ag, and 21Ah that extend linearly radially from the dot-like portion 21AA to the annular support portion 1B.

[0082] The perforated support portion 21A shown in FIG. 8(b) has eight radial portions, but eight is an example and the number may be seven or less or nine or more.

[0083] The outer peripheral convex portion 52 has a gas inlet pipe 52a consisting of a gas inlet hole 52aa provided in the upper surface 52A, a gas discharge hole (not shown) provided in the inner peripheral side wall, and a gas distribution path (not shown) that connects the gas inlet hole 52aa and the gas discharge hole (not shown). The gas distribution path may be configured to connect the gas inlet hole and the gas discharge hole without going around the outer peripheral convex portion as shown in Figure 6(b), or may be configured to connect the gas inlet hole and the gas discharge hole after going around the outer peripheral convex portion as shown in Figures 7(a) and 7(b). The gas introduction pipe 52a may be formed in a circumferential shape around the entire circumference of the outer circumferential protrusion 52, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7a). The gas introduction pipe 52a may be formed in a circular shape over any length less than one circumference of the outer circumferential convex portion 52, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7b).

[0084] 8(c) includes a flat portion 31 that supports a wafer W, and an outer peripheral protrusion 62 that is circumferentially disposed around the outer periphery of the flat portion 31 and is thicker than the wafer W. The flat portion 31 includes a perforated support portion 31A and an annular support portion 1B that is disposed outside the perforated support portion 31A and supports the outer peripheral edge Wo of the wafer W. The perforated support portion 31A has a dot-like portion 31AA at the center O of the flat portion 31, ring-like portions 31AB and 31AC that are concentrically disposed around the center O, and radial portions 31Aa, 31Ab, 31Ac, 31Ad, 31Ae, 31Af, 31Ag, and 31Ah that extend radially from the dot-like portion 31AA to the annular support portion 1B.

[0085] The perforated support portion 31A shown in FIG. 8(c) has eight radial portions, but eight is an example and the number may be seven or less or nine or more. Furthermore, the perforated support portion 31A shown in FIG. 8(c) has two ring-shaped portions, but two is an example and the number of ring-shaped portions may be one or three or more.

[0086] The outer peripheral convex portion 62 has a gas inlet pipe 62a consisting of a gas inlet hole 62aa provided in the upper surface 62A, a gas discharge hole (not shown) provided in the inner peripheral side wall, and a gas distribution path (not shown) that connects the gas inlet hole 62aa and the gas discharge hole (not shown). The gas distribution path may be configured to connect the gas inlet hole and the gas discharge hole without going around the outer peripheral convex portion as shown in Figure 6(b), or may be configured to connect the gas inlet hole and the gas discharge hole after going around the outer peripheral convex portion as shown in Figures 7(a) and 7(b). The gas introduction pipe 62a may be formed in a circumferential shape around the entire circumference of the outer circumferential protrusion 62, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7a). The gas introduction pipe 62a may be formed in a circular shape over any length less than one circumference of the outer circumferential protrusion 62, and may be configured to introduce gas from gas release holes arranged at equal or non-equidistant intervals (see FIG. 7b).

[0087] [Semiconductor manufacturing equipment] (First embodiment) 9 is a cross-sectional view showing the general configuration of the semiconductor manufacturing apparatus according to the first embodiment, where (a) shows the arrangement during film formation and (b) shows the arrangement during cooling of the wafer W. Fig. 10 is a diagram for explaining the relationship between the configuration of the wafer support and the configuration of the heater pedestal according to the present invention, where (a) is a plan view of the wafer support before it is placed on the heater pedestal, and (b) is a plan view of the wafer support after it has been placed on the heater pedestal.

[0088] The semiconductor manufacturing apparatus 100 shown in FIG. 9 includes the wafer support plate 10 shown in FIG. 1, a heater stage 40 having a support surface 40A on which a wafer W is placed and on which a groove pattern 40G (see FIG. 10(a)) is formed on the support surface 40A, a moving mechanism for moving the wafer support plate 10 in the vertical direction, a chamber 50 that accommodates the wafer support plate 10 and the heater stage 40, and a gas supply pipe 51 provided on the outer wall of the chamber 50, and the wafer support plate 10 has a portion of its perforated support portion 1A accommodated within the groove pattern 40G. In this specification, "a portion of the perforated support member is housed in the groove" or "a portion of the perforated support member is housed in the groove pattern" means that a portion of the perforated support member is housed in the groove so that the upper surface of the perforated support member is located below the mounting surface of the heater pedestal. In this manner, the wafer support plate and heater pedestal are formed so that the depth D of the groove pattern 40G and the thickness t1 of the perforated support member 1A satisfy the relationship D>t1. Therefore, when the wafer is placed on the mounting surface of the heater pedestal, the perforated support member does not come into contact with the wafer.

[0089] The semiconductor manufacturing apparatus 100 may be any known type of semiconductor manufacturing apparatus that includes a means for heating the wafer W to form a film, such as a sputtering method, a chemical vapor deposition (hereinafter abbreviated as CVD), or an evaporation method. Alternatively, any known type of semiconductor manufacturing apparatus that includes a means for supercooling the wafer W to process it, such as a plasma etching method, may be used. The following description will be given of the cooling of a heated wafer after film formation, using the sputtering method as an example. However, it will be readily understood that the semiconductor manufacturing apparatus may also be configured to return a supercooled wafer to room temperature (heating direction) after etching by appropriately changing components. 9 is a semiconductor manufacturing apparatus capable of depositing a metal film by sputtering, for example. Reference numeral 101 denotes a sputtering target. In the semiconductor manufacturing apparatus 100, cooling water CW flows near the sputtering target 101 on the outer wall 50B of the chamber 50 to cool the sputtering target 101.

[0090] The chamber 50 may be made of a metal such as aluminum or stainless steel and have a substantially cylindrical shape, but is not limited to this.

[0091] The heater stage 40 may be of a type that heats a wafer by placing the wafer on it, and typical examples include a resistance heating type and an induction heating type. The heater pedestal 40 is required to efficiently transfer heat from the heater to the wafer and to be corrosion-resistant against film-forming gases, etching gases, etc., so the base material of the heater pedestal 40 is often made of a ceramic material to maintain insulation, but is not limited to this.

[0092] The heater stand 40 has a mounting surface 40A provided with a groove pattern 40G. 10(a), the groove pattern 40G is made up of grooves 40Aa, 40Ab, 40Ac, 40Ad, 40Ae, 40Af, 40Ag, 40Ah, 40Abb, 40Add, 40Aff, 40Ahh, and 40AA. The mounting surface 40A is circular in plan view from the Z direction, and the groove pattern 40G is formed symmetrically with respect to the center HO of the circle. That is, groove pattern 40G is composed of ring-shaped groove 40AA with its center HO of groove pattern 40G as its circular center, eight radial grooves 40Aa, 40Ab, 40Ac, 40Ad, 40Ae, 40Af, 40Ag, and 40Ah extending linearly from ring-shaped groove 40AA, linear grooves 40Abb and 40Aff connecting radial grooves 40Ab and 40Af, and linear grooves 40Add and 40Ahh connecting radial grooves 40Ad and 40Ah. Radial grooves 40Ab and 40Af and linear grooves 40Abb and 40Aff are grooves that pass through center HO and are linearly connected. Radial grooves 40Ad and 40Ah and linear grooves 40Add and 40Ahh are grooves that pass through center HO and are linearly connected.

[0093] The perforated support portion 1A of the wafer support 10 is formed so as to be able to be housed in the groove of the groove pattern 40G on the mounting surface 40A of the heater pedestal 40. The ring-shaped portion 1AA constituting the perforated support portion 1A is accommodated in the groove 40AA, and the eight radial portions 1Aa, 1Ab, 1Ac, 1Ad, 1Ae, 1Af, 1Ag, and 1Ah constituting the perforated support portion 1A are accommodated in the grooves 40Aa, 40Ab, 40Ac, 40Ad, 40Ae, 40Af, 40Ag, and 40Ah, respectively. As shown in FIG. 9(a), the perforated support portion 1A is formed so that its thickness t1 is thinner than the depth D of the groove pattern 40G. With this configuration, when the wafer support 10 is placed on the mounting surface 40A of the heater pedestal 40, the perforated support portion 1A is accommodated in the grooves of the groove pattern 40G. When the wafer W is placed on the placement surface of the heater table placed on the wafer support 10, the linear portion is not in contact with the wafer.

[0094] The groove pattern 40G on the mounting surface 40A of the heater pedestal 40 may be used as a groove for flowing an inert gas such as Ar when the wafer W is placed on the heater pedestal 40 and heated. In this case, the groove serves to accommodate the wafer support plate 10 away from the wafer W, and also serves as a groove for flowing an inert gas such as Ar.

[0095] The semiconductor manufacturing apparatus 100 shown in Figure 9(a) further includes support pins 111, 112 that support the underside of the outer peripheral convex portion 2 of the wafer support plate 10, and a movement mechanism (not shown) moves the support pins 111, 112 up and down to move the wafer support plate 10 in the up and down direction. In the semiconductor manufacturing apparatus 100 shown in Figure 9(a), the support pins 111, 112 support the outer peripheral convex portion 2 from the underside 2C of the outer peripheral convex portion 2 of the wafer support plate 10, but this is not limiting, and the apparatus may also include a lifting mechanism that lifts the wafer support plate 10 from above the chamber. The lifting mechanism will be described in detail later.

[0096] 9(a) further includes lift pins 101A, 101B, and 101C that support the wafer W from its backside. The lift pins 101A, 101B, and 101C are inserted into through-holes in the heater pedestal 40, and their lower ends are supported by an elevator shaft (not shown). By raising and lowering the elevator shaft, the lift pins 101A, 101B, and 101C are raised and lowered, and the wafer W can be raised and lowered by their upper ends. 9(a) is provided with three lift pins, but three is an example and four or more lift pins may be provided. In addition, the locations where the lift pins are arranged are also an example and they may be arranged in other locations.

[0097] An example of the flow from film formation on the wafer W to cooling of the wafer W after film formation in the semiconductor manufacturing apparatus 100 shown in FIG. 9 will be described.

[0098] First, the wafer support 10 carrying the wafer W is placed on the heater pedestal 40 (see FIG. 9(a)). At this time, the wafer support 10 is placed on the heater pedestal 40 so that the perforated support portion 1A of the wafer support 10 is accommodated in the groove of the groove pattern 40G of the mounting surface 40A of the heater pedestal 40. When the perforated support portion 1A of the wafer support 10 is accommodated in the groove of the groove pattern 40G of the heater pedestal 40, the upper end of the perforated support portion 1A is positioned so as to be buried at a position deeper than the mounting surface 40A. At this time, the wafer W is placed on the mounting surface 40A, and the back surface of the wafer W is positioned flush with the mounting surface 40A, so the wafer support 10 is spaced apart from the wafer W.

[0099] Next, while the wafer W is heated by the heater table 40, a metal film, for example, is formed on the wafer W.

[0100] Next, the wafer W is separated from the mounting surface 40A of the heater pedestal 40 by the lift pins 101A, 101B, and 101C, and the support pins 111 and 112 push up the outer peripheral convex portion 2 of the wafer support 10, placing the wafer W on the perforated support portion 1A of the wafer support 10, and lifting the wafer support 10. At this time, even without using the lift pins 101A, 101B, and 101C, when the wafer support 10 is lifted, the wafer W is placed on the perforated support portion 1A of the wafer support 10, and the wafer W can move upward together with the wafer support 10. Therefore, the wafer support 10 and the wafer W may be lifted using only the support pins 111 and 112.

[0101] As the wafer support 10 and the wafer W move upward, the upper surface 2A of the outer peripheral protrusion 2 of the wafer support 10 comes into contact with the inner wall 50A of the chamber 50 (see FIG. 9(b)). At this time, a closed space K is formed by the inner wall 50A of the chamber 50, the outer peripheral protrusion 2 of the wafer support 10, and the wafer W.

[0102] Next, a cooling gas (e.g., Ar gas) is introduced into the closed space K from the gas supply pipe 51. The cooling gas introduced into the closed space K is cooled by heat conduction from the inner wall 50A to the outer wall 50B of the chamber 50, as the outer wall 50B is cooled by the cooling water flowing on the outer wall 50B. Since the closed space K is filled with the cooling gas, heat conduction via the gas is also increased between the sputtering target 101 cooled by the cooling water and the wafer W, and the cooling efficiency of the wafer W is improved. When a semiconductor manufacturing apparatus not having a sputtering target 101 is used, the wafer W is cooled by heat conduction between the wafer W and the inner wall 50A of the chamber 50 cooled by cooling water.

[0103] Since a high vacuum atmosphere can be maintained in areas other than the closed space K, heat conduction from the heater pedestal 40 to the wafer W and to the chamber atmosphere can be blocked, thereby suppressing temperature changes in the heater pedestal 40. During cooling of the wafer W, the pressure in the closed space K into which the cooling gas is introduced can be set to, for example, 1 to 10 Torr (133 Pa to 1333 Pa), and the pressure in the chamber other than the closed space K can be set to, for example, about 10 mTorr (1.33 Pa).

[0104] As described above, in the semiconductor manufacturing apparatus according to the present invention, a metal film is formed while the wafer is heated by the heater table, and once the film formation is complete, the wafer W can be moved to the vicinity of the sputtering target within the same chamber using a movement / support mechanism that separates the wafer from the heater table, and then cooled. Since the wafer can be cooled without being transported to a chamber other than the one where the film was formed, the time from film formation to the start of cooling can be shortened, improving the thermal history of the metal film. Since the wafer is separated from the heater pedestal, temperature changes on the heater pedestal can be minimized, minimizing the impact on film formation on the subsequent wafer W.

[0105] (Variations 1 to 3) 11(a) to 11(c) are schematic plan views showing the general configuration of another modified example of the heater pedestal shown in FIG. 10. The heater pedestals shown in FIGS. 11(a) to 11(c) correspond to the wafer support plate 10A, wafer support plate 10B, and wafer support plate 10C shown in FIGS. 4, 5, and 6, respectively. A heater pedestal corresponding to a wafer support plate means that the perforated support portion of the wafer support plate is accommodated in the groove of the groove pattern on the mounting surface of the heater pedestal. In other words, when a wafer is placed on the mounting surface of the heater pedestal, the perforated support portion of the wafer support plate is not in contact with the wafer.

[0106] 11(a) to 11(c) are schematic plan views showing a state in which wafer support plate 10A, wafer support plate 10B, and wafer support plate 10C are placed on heater pedestals 40A, 40B, and 40C, respectively.

[0107] (Second embodiment) 12 is a cross-sectional view showing the general configuration of a semiconductor manufacturing apparatus according to the second embodiment, where (a) shows the arrangement during film formation and (b) shows the arrangement during cooling of the wafer W. Fig. 13 is a diagram for explaining the relationship between the configuration of the wafer support and the configuration of the heater pedestal according to the present invention, where (a) is a plan view of the wafer support before it is placed on the heater pedestal, and (b) is a plan view of the wafer support after it has been placed on the heater pedestal.

[0108] The semiconductor manufacturing apparatus according to the second embodiment is mainly different from the semiconductor manufacturing apparatus according to the first embodiment in that the outer peripheral convex portion of the wafer support plate is provided with a gas introduction pipe. Hereinafter, components common to those in the semiconductor manufacturing apparatus according to the first embodiment will be denoted by the same reference numerals, and a description thereof will be omitted.

[0109] The semiconductor manufacturing apparatus 200 shown in Figure 12 includes the wafer support plate 20 shown in Figure 6, a heater stage 40 having a support surface 40A on which a wafer W is placed and on which a groove pattern 40G (see Figure 10(a)) is formed on the support surface 40A, a moving mechanism for moving the wafer support plate 20 in the vertical direction, a chamber 60 that accommodates the wafer support plate 20 and the heater stage 40, and a gas supply pipe 61 provided on the outer wall of the chamber 60, and the linear portion 1A of the wafer support plate 20 is accommodated within the groove pattern 40G. The gas supply pipe 61 may also serve as a gas exhaust pipe. Alternatively, the gas exhaust pipe may be provided separately from the gas supply pipe 61 on the outer wall of the chamber.

[0110] In the semiconductor manufacturing apparatus 200 shown in FIG. 12, when the wafer W is cooled, the wafer support plate 20 is raised and the upper surface 12A of the outer peripheral protrusion 12 of the wafer support plate 20 is brought into contact with the inner wall 61A of the chamber 60, and the gas introduction hole 12aa on the upper surface 12A of the outer peripheral protrusion 12 is connected to the gas supply pipe 61 provided on the outer wall of the chamber 60. 12 includes gas inlet holes 12aa in the upper surface 12A of the outer peripheral protrusion 12 of the wafer support 20, so that cooling gas can be introduced from the gas supply pipe 61 provided on the outer wall of the chamber 60 through the upper surface 12A of the outer peripheral protrusion 12, thereby allowing the diameter of the wafer support 20 to be smaller than that of the semiconductor manufacturing apparatus 100 shown in FIG. 9. As a result, the diameter of the chamber itself can also be smaller than that of the semiconductor manufacturing apparatus 100 shown in FIG.

[0111] The heater stand 40 shown in FIG. 13(a) has the same configuration as the heater stand 40 shown in FIG. 10(a). On the other hand, a wafer support plate 20 shown in FIG. 13(a) differs from the wafer support plate 10 shown in FIG. 10(a) in that a gas introduction pipe 12a is provided in the outer peripheral convex portion of the wafer support plate.

[0112] (Variations 1 to 3) Figures 14(a) to 14(c) are schematic plan views showing the general configuration of another modified example of the heater pedestal shown in Figure 13. Heater pedestals 40A, 40B, and 40C shown in Figures 14(a) to 14(c) are heater pedestals corresponding to the wafer support plate 20C, wafer support plate 20D, and wafer support plate 20E shown in Figures 8(a) to 8(c), respectively. Figures 14(a) to 14(c) are schematic plan views showing the wafer support plate 20C, wafer support plate 20D, and wafer support plate 20E placed on the heater pedestals 40A, 40B, and 40C, respectively.

[0113] 14(a) has a gas introduction pipe 42a consisting of a gas introduction hole 42aa provided in an upper surface 42A, a gas discharge hole (not shown) provided in an inner peripheral side wall, and a gas flow path (not shown) that connects the gas introduction hole 42aa and the gas discharge hole (not shown). The gas flow path may be configured to connect the gas introduction hole and the gas discharge hole without going around the outer peripheral convex portion as shown in FIG. 6(b), or may be configured to connect the gas introduction hole and the gas discharge hole after going around the outer peripheral convex portion as shown in FIGS. 7(a) and 7(b). A heater pedestal 40A shown in FIG. 14(a) has a groove pattern on the mounting surface that can accommodate the perforated support portion of the wafer support plate 20C.

[0114] 14(b) has a gas introduction pipe 52a consisting of gas introduction holes 52aa provided in an upper surface 52A, gas discharge holes (not shown) provided in an inner peripheral side wall, and a gas flow path (not shown) that connects the gas introduction holes 52aa and the gas discharge holes (not shown). The gas flow path may be configured to connect the gas introduction holes and the gas discharge holes without going around the outer peripheral convex portion as shown in FIG. 6(b), or may be configured to connect the gas introduction holes and the gas discharge holes after going around the outer peripheral convex portion as shown in FIGS. 7(a) and 7(b). A heater pedestal 40B shown in FIG. 14(b) has a groove pattern on the mounting surface that can accommodate the perforated support portion of the wafer support plate 20D.

[0115] 14(c) has a gas introduction pipe 62a consisting of gas introduction holes 62aa provided in an upper surface 62A, gas discharge holes (not shown) provided in an inner peripheral side wall, and a gas flow path (not shown) that connects the gas introduction holes 62aa and the gas discharge holes (not shown). The gas flow path may be configured to connect the gas introduction holes and the gas discharge holes without going around the outer peripheral convex portion as shown in FIG. 6(b), or may be configured to connect the gas introduction holes and the gas discharge holes after going around the outer peripheral convex portion as shown in FIGS. 7(a) and 7(b). A heater pedestal 40C shown in FIG. 14(c) has a groove pattern on the mounting surface that can accommodate the perforated support portion of the wafer support plate 20E.

[0116] (Third embodiment) Figure 15 is a cross-sectional schematic diagram showing the general configuration of a semiconductor manufacturing apparatus according to the third embodiment, where (a) shows the arrangement during film formation and (b) shows the arrangement during cooling of the wafer W. The semiconductor manufacturing apparatus according to the third embodiment is mainly different from the semiconductor manufacturing apparatus according to the second embodiment in that the support pins support the outer peripheral convex portion of the wafer support plate from above (lifting mechanism). The example shown in Fig. 15 is an example in which the configuration in the semiconductor manufacturing apparatus according to the second embodiment in which the support pins support the underside of the outer peripheral convex portion of the wafer support plate is replaced with a configuration in which the support pins support the outer peripheral convex portion of the wafer support plate from above (lifting mechanism). However, the configuration in the semiconductor manufacturing apparatus according to the first embodiment in which the support pins support the underside of the outer peripheral convex portion of the wafer support plate may also be replaced with a configuration in which the support pins support the outer peripheral convex portion of the wafer support plate from above (lifting mechanism). Hereinafter, components common to those in the semiconductor manufacturing apparatus according to the second embodiment will be denoted by the same reference numerals, and a description thereof will be omitted.

[0117] The semiconductor manufacturing apparatus 200A shown in Figure 15(a) includes the wafer support plate 20 shown in Figure 6, a heater stage 40 having a support surface 40A on which a wafer W is placed and on which a groove pattern 40G (see Figure 10(a)) is formed on the support surface 40A, a moving mechanism for moving the wafer support plate 20 in the vertical direction, a chamber 60 that accommodates the wafer support plate 20 and the heater stage 40, and a gas supply pipe 61 provided on the outer wall of the chamber 60, and the linear portion 1A of the wafer support plate 20 is accommodated within the groove pattern 40G.

[0118] 15(a) further includes support pins 111A and 112A that support the upper surface 12A of the outer peripheral protrusion 12 of the wafer support plate 20, and a movement mechanism (not shown) moves the support pins 111A and 112A up and down to move the wafer support plate 20 in the up and down direction. The support pins 111A and 112A penetrate from the upper inner wall 60A to the outer wall 60B of the chamber 60, but this is not limiting. For example, a space for retracting the support pins 11A and 112A may be provided within the chamber 60.

[0119] As shown in Figure 15(b), in the semiconductor manufacturing apparatus 200A, when cooling the wafer W, the wafer support plate 20 is moved upward and the upper surface 12A of the outer peripheral convex portion 12 of the wafer support plate 20 is brought into contact with the inner wall 60A of the chamber 60, and the gas introduction hole 12aa on the upper surface 12A of the outer peripheral convex portion 12 is connected to the gas supply pipe 61 provided on the outer wall of the chamber 60.

[0120] An advantage of employing a lifting mechanism is that, when moving the wafer support plate 20 to the cooling position, guide holes for the support pins 111A, 112A can be formed in the inner wall 60A of the chamber 60, which facilitates highly accurate alignment of the contact position between the outer peripheral convex portion 20 of the wafer support plate 20 and the inner wall 60A of the chamber 60. This improves the accuracy of alignment between the gas supply pipe 61 and the hole in the upper surface 12A of the outer peripheral convex portion 20. In other words, it reduces the risk of misalignment hindering the flow of gas into and out of the closed space K. Furthermore, in order to allow rear surface gas to flow during film formation, the width of the groove in the heater stand 40 is made slightly larger than the width of the linear portion, so that there is a large margin, or so-called clearance, for aligning the gas supply pipe 61 with the groove in the heater stand 40 and the linear portion of the wafer support plate 20. Therefore, problems are unlikely to arise even if priority is given to aligning the gas supply pipe 61.

[0121] 16A and 16B show a modified example of the semiconductor manufacturing apparatus 200A shown in FIG. 15, in which (a) shows the arrangement during film formation, and (b) shows the arrangement during cooling of the wafer W. The semiconductor manufacturing apparatus 200B shown in FIG. 16 has a different support pin configuration from that of the semiconductor manufacturing apparatus 200A shown in FIG. The support pins 111B and 112B included in the semiconductor manufacturing apparatus 200B shown in Figure 16 have first portions 111Ba and 112Ba that protrude from the outer peripheral side surface 12D of the outer peripheral protrusion 12 of the wafer support 20, and second portions 111Bb and 112Bb that are connected to the first portions 111Ba and 112Ba and extend upward. While Figure 16 illustrates an example in which the first portions protrude horizontally and the second portions extend vertically, the protruding and extending directions are not limited thereto. For example, the first portions may extend obliquely upward from the outer peripheral side surface 12D, and the second portions may be connected to the first portions and extend obliquely upward at a different angle from the obliquely upward angle of the first portions, but may also extend vertically from midway. Alternatively, for example, the first portion may protrude from the outer peripheral side surface 12D in a quarter-circular arc shape that changes direction from horizontal to vertical, and the first portion may be connected to form a second portion that extends vertically. The first portion protruding from the outer peripheral side surface 12D and the second portion extending upward may have other shapes, such as those exemplified above.

[0122] 15 and 16 show an example in which a wafer support plate having a gas introduction pipe in the outer peripheral convex portion is used, but the present invention may also be applied to a wafer support plate that does not have a gas introduction pipe in the outer peripheral convex portion.

[0123] Figures 17(a) and (b) respectively show examples of the positions of the support pins in Figures 15 and 16. The support pins must be positioned so that they do not interfere with the transfer of the wafer.

[0124] 17(a), a plate shaped like a fork F for transporting the wafer W is inserted between the backside of the wafer W lifted by the lift pins 101A, 101B, and 101C and the heater pedestal 40, and the backside of the wafer W is brought into contact with the fork F by lowering the lift pins 101A, 101B, and 101C or by raising the fork F, and the wafer W is placed on the fork F, and the wafer W is transported in or out. Here, an example of the size of the fork F and the positional relationship for insertion is shown in the figure. The fork F must be positioned so that it does not come into contact with the lift pins 101A, 101B, and 101C or the support pins 111A, 112A, 113A, 114A, 115A, and 116A of the lifting mechanism.

[0125] Similarly, as shown in Figure 17(b), the fork F must be positioned so that it does not hit the lift pins 101A, 101B, 101C or the support pins 111Ba, 111Bb, 112Ba, 112Bb, 113Ba, 113Bb, 114Ba, 114Bb, 115Ba, 115Bb, 116Ba, 116Bb of the lifting mechanism.

[0126] The following additional notes are provided regarding the above-described embodiment. (Appendix 1) A wafer support plate comprising: a flat portion that supports a wafer; and an outer peripheral convex portion that is arranged around the outer periphery of the flat portion and is formed thicker than the wafer, wherein the flat portion comprises a perforated support portion and an annular support portion that is arranged outside the perforated support portion and supports the outer peripheral edge of the wafer. (Appendix 2) 2. The wafer support plate according to claim 1, wherein the outer peripheral convex portion is formed with a gas introduction pipe that communicates from the upper surface to the inner peripheral side wall. (Appendix 3) 3. The wafer support plate according to claim 1, wherein the perforated support portion is made of linear portions and has a linear pattern that is symmetrical with respect to the center of the flat portion. (Appendix 4) The wafer support plate of claim 3, wherein the perforated support portion has a ring-shaped portion whose circular center is the center of the flat portion, and radial portions extending radially in lines from the ring-shaped portion to the annular support portion. (Appendix 5) 4. The wafer support plate according to claim 3, wherein the perforated support portion is made of radial portions extending linearly radially from the center of the flat portion to the annular support portion. (Appendix 6) The wafer support plate of claim 3, wherein the perforated support portion has radial portions extending linearly from the center of the flat portion to the annular support portion, and a plurality of ring-shaped portions arranged concentrically with the center of the flat portion as the center of the concentric circles. (Appendix 7) The wafer support plate of Appendix 3, wherein the perforated support portion has a ring-shaped portion whose circular center is the center of the flat portion, a radial portion extending radially and linearly from the ring-shaped portion to the annular support portion, and a non-radial portion extending non-radially and linearly from the ring-shaped portion to the annular support portion. (Appendix 8) 8. The wafer support plate according to any one of claims 1 to 7, wherein the perforated support portion is a linear portion having a width of 3 mm or more and 30 mm or less. (Appendix 9) 3. The wafer support plate according to claim 2, wherein the outer peripheral convex portion includes the gas inlet pipe, the gas inlet pipe consisting of a gas inlet hole provided on the top surface, a gas discharge hole provided on the inner peripheral side wall, and a gas flow path connecting the gas inlet hole and the gas discharge hole. (Appendix 10) 10. The wafer support plate according to claim 9, wherein the gas flow path is disposed in a circular shape within the outer peripheral convex portion. (Appendix 11) 11. The wafer support plate according to claim 9, wherein the gas introduction pipe has a plurality of the gas release holes arranged at a distance from each other. (Appendix 12) 12. The wafer support plate according to any one of claims 1 to 11, made of a heat-resistant material having a melting point of 500°C or higher. (Appendix 13) 13. The wafer support plate according to claim 12, wherein the heat-resistant material comprises any one of SUS, Ti alloy, Ni alloy, Co alloy, Ta alloy, and Mo alloy, or a combination thereof. (Appendix 14) A wafer support plate according to any one of claims 1 to 13; a heater table having a mounting surface on which a wafer is placed, the mounting surface having a groove pattern formed thereon; a moving mechanism that moves the wafer support plate in a vertical direction; a chamber containing the wafer support plate and the heater pedestal; a gas supply pipe provided on an outer wall of the chamber; The semiconductor manufacturing device, wherein the wafer support plate has a portion of the perforated support portion housed within the groove pattern. (Appendix 15) 15. The semiconductor manufacturing apparatus according to claim 14, wherein the gas supply pipe also serves as a gas exhaust pipe. (Appendix 16) 15. The semiconductor manufacturing apparatus of claim 14, further comprising a gas exhaust pipe provided on an outer wall of the chamber. (Appendix 17) a support pin for supporting the outer peripheral protrusion, 17. The semiconductor manufacturing apparatus according to claim 14, wherein the moving mechanism moves the support pins up and down to move the wafer support plate in the up and down direction. (Appendix 18) 18. The semiconductor manufacturing apparatus according to claim 17, wherein the support pin supports the outer peripheral convex portion from a lower surface of the outer peripheral convex portion. (Appendix 19) 18. The semiconductor manufacturing apparatus according to claim 17, wherein the support pin supports the outer peripheral convex portion from an upper surface of the outer peripheral convex portion. (Appendix 20) 18. The semiconductor manufacturing apparatus of claim 17, wherein the support pin has a first portion that protrudes from the outer peripheral side surface of the outer peripheral convex portion and a second portion that is connected to the first portion and extends upward, and the support pin supports the outer peripheral convex portion. [Explanation of symbols]

[0127] 1, 11, 21, 31 flat area 1A, 11A, 21A, 31A Perforated support part 1B Annular support 2, 12 Outer periphery convex part 12a, 22a, 32a Gas inlet pipes 10, 10A, 10B, 10C, 20A, 20B, 20C, 20D, 20E Wafer support plate 40, 40A, 40B, 40C heater stand 50, 60 chambers 51, 61 Gas supply pipe 100, 200 Semiconductor manufacturing equipment

Claims

1. a flat portion that supports the wafer; and a peripheral convex portion that is arranged around the outer periphery of the flat portion and is formed thicker than the wafer, the flat portion includes a perforated support portion and an annular support portion disposed outside the perforated support portion and supporting an outer peripheral edge of the wafer; The wafer support plate has a gas introduction pipe formed in the outer peripheral convex portion, the gas introduction pipe communicating from the upper surface to the inner peripheral side wall.

2. 2. The wafer support plate according to claim 1, wherein the perforated support portion is made up of linear portions and has a linear pattern symmetrical with respect to the center of the flat portion.

3. 3. The wafer support plate according to claim 2, wherein the perforated support portion has a ring-shaped portion whose circular center is the center of the flat portion, and radial portions extending radially and linearly from the ring-shaped portion to the annular support portion.

4. 3. The wafer support plate according to claim 2, wherein the perforated support portion comprises radial portions extending linearly radially from the center of the flat portion to the annular support portion.

5. 3. The wafer support plate according to claim 2, wherein the perforated support portion has radial portions extending linearly from the center of the flat portion to the annular support portion, and a plurality of ring-shaped portions arranged concentrically with the center of the flat portion as the center of the concentric circles.

6. 2. The wafer support plate according to claim 1, wherein the outer peripheral convex portion is provided with the gas inlet pipe consisting of a gas inlet hole provided on the top surface, a gas discharge hole provided on the inner peripheral side wall, and a gas flow path connecting the gas inlet hole and the gas discharge hole.

7. A wafer support plate comprising a flat portion for supporting a wafer and a peripheral convex portion arranged around the outer periphery of said flat portion and formed thicker than the wafer, said flat portion consisting of a perforated support portion and an annular support portion arranged outside said perforated support portion and supporting the outer peripheral edge of the wafer; a heater table having a mounting surface on which a wafer is placed, the mounting surface having a groove pattern formed thereon; a moving mechanism that moves the wafer support plate in a vertical direction; a chamber containing the wafer support plate and the heater pedestal; a gas supply pipe provided on an outer wall of the chamber; The semiconductor manufacturing device, wherein the wafer support plate has a portion of the perforated support portion housed within the groove pattern.

8. a support pin for supporting the outer peripheral protrusion, 8. The semiconductor manufacturing apparatus according to claim 7, wherein said moving mechanism moves said support pins up and down to move the wafer support plate in the up and down direction.

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