Gas mixing device and semiconductor processing device

Abstract

The present invention provides a gas mixing device, in which the intake ends of the first intake passage and the second intake passage are connected to the exhaust ends of the first intake pipe and the second intake pipe, the exhaust ends of the first intake passage and the second intake passage are connected to the annular gas mixing passage, and the exhaust end of the annular gas mixing passage is connected to the process chamber of a semiconductor processing device, and the exhaust directions of the first intake passage and the second intake passage are set so that the gases flowing from the exhaust ends of the first intake passage and the second intake passage into the annular gas mixing passage rotate and flow in the same direction in the circumferential direction of the annular gas mixing passage when they are mixed. The gas mixing device and the semiconductor processing device according to the present invention can not only shorten the gas mixing time and improve the gas mixing efficiency, but also effectively improve the mixing uniformity and improve the product performance.

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to gas mixing systems and semiconductor processing equipment. [Background technology]

[0002] At present, atomic layer deposition (ALD) equipment is widely used in the semiconductor chip manufacturing process, and its gas flow-related systems mainly include an intake system, a gas mixing system, a gas separation system, and an exhaust system. The intake method for the ALD process mainly uses pulsed intake to achieve the deposition of a monolayer on the wafer surface.

[0003] Specifically, the gas intake method for an ALD process using two types of source gases includes step 1 of introducing a diluent gas (e.g., nitrogen gas) into the process chamber and purging the lines and the chamber, step 2 of introducing a mixed gas of a first source gas and the diluent gas into the process chamber, step 3 of stopping the introduction of the first source gas and introducing the diluent gas into the process chamber, step 4 of introducing a mixed gas of a second source gas and the diluent gas into the process chamber, and step 5 of stopping the introduction of the second source gas and introducing the diluent gas into the process chamber.

[0004] Repeat steps 2 to 5 above.

[0005] In the process of steps 2 and 5, the source gas and dilution gas (or carrier gas used as the source gas) are thoroughly mixed using a gas mixer to make the mixed gas concentration very uniform, and then the gas is rapidly dispersed in a gas separation system (e.g., a shower device) and then uniformly sprayed onto the wafer surface to initiate a chemical reaction and form a film. Here, how quickly and uniformly the gas is mixed is very important for shortening the gas mixing time and improving performance and production capacity. Summary of the Invention [Problem to be solved by the invention]

[0006] However, conventional gas mixing devices promote horizontal gas flow by maintaining pressure, but this method not only causes serious flow blockage, large flow resistance, and low gas mixing efficiency, but also makes it difficult to achieve completely uniform gas mixing, resulting in low uniformity effect and making it unsuitable for operation modes with relatively high requirements for gas mixing.

[0007] The object of the present invention is to solve at least one of the technical problems existing in the prior art, and to provide a gas mixing apparatus and a semiconductor processing apparatus that can not only shorten the gas mixing time and improve the gas mixing efficiency, but also effectively improve the mixing uniformity and improve the product performance. [Means for solving the problem]

[0008] In order to achieve the object of the present invention, a gas mixing device is provided which is applicable to a semiconductor processing device, and includes a gas mixing member, a first intake pipe and a second intake pipe, the gas mixing member is provided with a first intake passage, a second intake passage and an annular gas mixing passage; the intake ends of the first intake passage and the second intake passage communicate with the exhaust ends of the first intake pipe and the second intake pipe, respectively; the exhaust ends of the first intake passage and the second intake passage both communicate with the annular gas mixing passage, and the exhaust end of the annular gas mixing passage communicates with a process chamber of the semiconductor process device; The exhaust directions of the first intake passage and the second intake passage are set so that when gases flowing into the annular gas mixing passage from the exhaust ends of the first intake passage and the second intake passage, respectively, are mixed, they all rotate and flow in the same direction circumferentially around the annular gas mixing passage.

[0009] Optionally, the first intake passage includes a plurality of first gas equalization holes uniformly distributed along a circumferential direction of the annular gas mixing passage, and when a connecting line between an orthogonal projection of an exhaust end of each of the first gas equalization holes in a radial cross section of the annular gas mixing passage and a center of the radial cross section is defined as a first connecting line, and a connecting line between an orthogonal projection of an intake end of each of the first gas equalization holes in the radial cross section and a center of the radial cross section is defined as a second connecting line, an included angle exists between the first connecting line and the second connecting line.

[0010] Optionally, the second intake passage includes a plurality of second gas equalization holes uniformly distributed along a circumferential direction of the annular gas mixing passage, and when a connecting line between an orthogonal projection of an exhaust end of each of the second gas equalization holes in a radial cross section of the annular gas mixing passage and a center of the radial cross section is defined as a third connecting line, and a connecting line between an orthogonal projection of an intake end of each of the second gas equalization holes in the radial cross section and a center of the radial cross section is defined as a fourth connecting line, an included angle exists between the third connecting line and the fourth connecting line, The second gas homogenization holes and the first gas homogenization holes are offset from each other in the axial direction of the annular gas mixing passage.

[0011] Optionally, the first intake passage further includes a first annular sub-passage and a first connecting sub-passage, the first annular sub-passage surrounds the outside of the annular gas mixing passage, the first gas homogenizing holes are located between the first annular sub-passage and the annular gas mixing passage, an intake end of each of the first gas homogenizing holes communicates with the first annular sub-passage, and an exhaust end of each of the first gas homogenizing holes communicates with the annular gas mixing passage; Both ends of the first connecting sub-passage are connected to the first annular sub-passage and the exhaust end of the first intake pipe, respectively, and the exhaust direction of the first connecting sub-passage is set so that gas flowing into the first annular sub-passage rotates and flows, and the gas flow direction in the first annular sub-passage is the same as the gas flow direction in the annular gas mixing passage.

[0012] Optionally, the second intake passage further includes a second annular sub-passage and a second connecting sub-passage, the second annular sub-passage surrounds the inside of the annular gas mixing passage, the second gas homogenizing holes are located between the second annular sub-passage and the annular gas mixing passage, an intake end of each of the second gas homogenizing holes communicates with the second annular sub-passage, and an exhaust end of each of the second gas homogenizing holes communicates with the annular gas mixing passage; The second connecting sub-passage and the first connecting sub-passage are offset from each other in the axial direction of the annular gas mixing passage, both ends of the second connecting sub-passage are connected to the second annular sub-passage and the exhaust end of the second intake pipe, respectively, and the exhaust direction of the second connecting sub-passage is set so that gas flowing into the second annular sub-passage rotates and flows, and the gas flow direction in the second annular sub-passage is the same as the gas flow direction in the annular gas mixing passage.

[0013] Optionally, an orthogonal projection of the axis of the first connecting sub-passage on a radial cross section of the gas mixing element overlaps with, is parallel to, or forms an included angle with any one radial direction on the radial cross section; The orthogonal projection of the axis of the second connecting sub-passage on the radial cross section of the gas mixing member overlaps with, is parallel to, or forms an included angle with any one of the radial directions on the radial cross section.

[0014] Optionally, the gas mixing device further includes a third intake pipe and an on-off valve provided in the third intake pipe; The gas mixing member further includes a third intake passage, the third intake passage being located above the annular gas mixing passage, the intake end of the third intake passage being connected to the exhaust end of the third intake pipe line, and the exhaust end of the third intake passage being connected to at least one of the first annular sub-passage and the second annular sub-passage.

[0015] Alternatively, the third intake passage includes a plurality of third gas equalization holes uniformly distributed around the circumference of the annular gas mixing passage, an intake end of each of the third gas equalization holes communicating with an exhaust end of the third intake line, and an exhaust end of each of the third gas equalization holes communicating with the first annular sub-passage or the second annular sub-passage; or The third intake passage includes two hole groups, each hole group including a plurality of third gas equalization holes evenly distributed circumferentially around the annular gas mixing passage, and one of the hole groups has a plurality of third gas equalization holes whose intake ends communicate with the exhaust end of the third intake pipe and whose exhaust ends communicate with the first annular sub-passage, and the other hole group has a plurality of third gas equalization holes whose intake ends communicate with the exhaust end of the third intake pipe and whose exhaust ends communicate with the second annular sub-passage.

[0016] Optionally, the on-off valve includes a valve body and a valve plate, the valve body is connected between the third intake pipe line and the gas mixing member, and a connecting passage is provided in the valve body, and the connecting passage is connected to an exhaust end of the third intake pipe line and an intake end of the third intake passage; The valve plate is movably disposed within the connecting passage and is used to open or close the connecting passage, and the valve plate is provided with at least one through hole for allowing gas to pass therethrough at a rate not exceeding a preset flow rate.

[0017] Optionally, the third intake passage further includes a third connecting sub-passage, an intake end of the third connecting sub-passage communicating with an exhaust end of the third intake pipe line, and an exhaust end of the third connecting sub-passage communicating with intake ends of the plurality of third gas equalization holes; A flow guide protrusion is provided on a surface of the gas mixing member facing the exhaust end of the third intake pipe, and the surface of the flow guide protrusion facing the exhaust end of the third intake pipe is an arc-shaped convex surface that is used to divert the gas that has flowed into the third connecting sub-passage to the intake ends of the plurality of third gas equalization holes.

[0018] Optionally, the gas mixing member further includes a merging passage located below the annular gas mixing passage, the merging passage including a third annular sub-passage and a vertical sub-passage, an intake end of the third annular sub-passage communicating with an exhaust end of the annular gas mixing passage and an exhaust end of the third annular sub-passage communicating with an intake end of the vertical sub-passage, and both an inner diameter and an outer diameter of the third annular sub-passage gradually decreasing from the annular gas mixing passage toward the vertical sub-passage; The exhaust end of the vertical sub-passage is adapted to communicate with the process chamber of the semiconductor processing device.

[0019] As another technical solution, the present invention provides a semiconductor processing apparatus including a process chamber, characterized in that it further includes the above-mentioned gas mixing apparatus provided by the present invention for introducing a gas mixture into the process chamber.

[0020] Optionally, the process chamber includes a chamber body, a cover plate provided on top of the chamber body, and a shower device, the shower device being located below the cover plate; The gas mixing member is provided above the cover plate, and the cover plate is provided with a first intake port corresponding to the exhaust end of the annular gas mixing passage. The first intake port is provided with a flow guide plug, and the flow guide plug is provided with a plurality of through holes for changing the flow direction of the mixed gas passing through it to a vertically downward direction.

[0021] Optionally, the plurality of through holes include a plurality of first through holes and a plurality of second through holes, and the plurality of first through holes surround the axis of the flow-directing plug at least once; Among the multiple first through holes located at the outermost periphery, at least one second through hole is provided between each two adjacent first through holes, and the radial cross-sectional area of ​​the second through hole is smaller than the radial cross-sectional area of ​​the first through hole.

[0022] Optionally, the plurality of through holes include one first through hole having a circular radial cross-sectional shape and one or more second through holes having an annular radial cross-sectional shape; The second through hole surrounds the first through hole, and the second through holes are nested within each other. Each second through hole is further provided with at least one reinforcing rib extending radially of the second through hole, and both ends of the reinforcing rib along the radial direction of the second through hole are connected to the inner and outer walls of the second through hole, respectively.

[0023] Optionally, a tapered passage is provided on the surface of the cover plate facing the shower device, the upper end of the tapered passage communicating with the first air intake port and the lower end of the tapered passage communicating with a second air intake port in the shower device, the inner diameter of the tapered passage gradually increasing from the first air intake port toward the second air intake port. [Effects of the Invention]

[0024] The present invention has the following beneficial effects.

[0025] In the gas mixing device of the present invention, the exhaust directions of the first and second intake passages are set so that the gases flowing from the exhaust ends of the first and second intake passages into the annular gas mixing passage rotate in the same circumferential direction (i.e., clockwise or counterclockwise) around the annular gas mixing passage when they are mixed. This allows various gases to mix while rotating, i.e., forming a swirling flow, thereby improving the smoothness of the gas flow, reducing flow resistance, increasing flow velocity, shortening the gas mixing time, and improving gas mixing efficiency, thereby contributing to improved production capacity. Furthermore, the various gases can fully exchange momentum and mass mix during rotation, thereby effectively improving mixing uniformity and further improving product performance. Furthermore, the external structure of the gas mixing device of the present invention is composed only of a gas mixing member, a first intake pipe, and a second intake pipe, resulting in a simple structure and high integration, thereby saving space and reducing processing costs.

[0026] By using the gas mixing device of the present invention, the semiconductor process equipment of the present invention can shorten the gas mixing time, improve the gas mixing efficiency, and contribute to improving production capacity, as well as effectively improve the mixing uniformity and further improve product performance. [Brief explanation of the drawings]

[0027] [Figure 1] 1 is a diagram showing the external structure of a gas mixing device according to a first embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a gas mixing device according to a first embodiment of the present invention. [Figure 3] FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. [Figure 4] FIG. 3 is a cross-sectional view taken along line BB in FIG. 2. [Figure 5] 3A to 3C are diagrams showing three different positional relationships between the second connection sub-passage and the second annular sub-passage used in the first embodiment of the present invention. [Figure 6] FIG. 3 is a cross-sectional perspective view taken along line CC in FIG. 2. [Figure 7]FIG. 3 is a cross-sectional plan view taken along line CC in FIG. 2. [Figure 8] FIG. 3 is a cross-sectional perspective view taken along line DD in FIG. 2. [Figure 9] FIG. 3 is a cross-sectional plan view taken along line DD in FIG. 2. [Figure 10] FIG. 3 is a schematic diagram of the gas flow direction in the gas mixing member used in the first embodiment of the present invention. [Figure 11] FIG. 4 is a cross-sectional view of a gas mixing device according to a second embodiment of the present invention. [Figure 12] FIG. 10 is a diagram showing the external structure of a gas mixing member used in a second embodiment of the present invention. [Figure 13] FIG. 12 is a cross-sectional perspective view taken along line EE in FIG. [Figure 14] FIG. 10 is a plan view of a third intake passage used in a second embodiment of the present invention. [Figure 15] FIG. 10 is a structural diagram of a third intake passage used in a second embodiment of the present invention. [Figure 16] FIG. 10 is another structural view of the third intake passage used in the second embodiment of the present invention. [Figure 17] FIG. 10 is a further structural diagram of the third intake passage used in the second embodiment of the present invention. [Figure 18] FIG. 4 is a cross-sectional view of an on-off valve used in a second embodiment of the present invention. [Figure 19] FIG. 10 is a plan view of a valve plate used in a second embodiment of the present invention. [Figure 20] FIG. 10 is a cross-sectional view of a semiconductor processing device according to a third embodiment of the present invention. [Figure 21] FIG. 10 is a partial cross-sectional view of a cover plate and a shower device used in a third embodiment of the present invention. [Figure 22] FIG. 10 is a radial cross-sectional view of a flow guide plug used in a third embodiment of the present invention. [Figure 23] FIG. 10 is another radial cross-sectional view of the flow guide plug used in the third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0028] In order to help those skilled in the art better understand the technical solutions of the present invention, the gas mixing apparatus and semiconductor processing apparatus of the present invention will be described in detail below with reference to the drawings.

[0029] First Example A gas mixing apparatus according to a first embodiment of the present invention is applied to a semiconductor processing apparatus, such as an atomic layer deposition (ALD) apparatus. The gas mixing apparatus communicates with a process chamber in the semiconductor processing apparatus, is connected to, for example, a shower apparatus provided in the process chamber, and is used to mix gases, and delivers the mixed gases to the process chamber via the shower apparatus.

[0030] 1 and 2, the gas mixing device includes a gas mixing member 1, a first intake pipe 2, and a second intake pipe 3, where the first intake pipe 2 and the second intake pipe 3 draw gas from the lateral direction of the gas mixing member 1. The intake end of the first intake pipe 2 is used to communicate with at least one gas source. For example, in an ALD apparatus, two first branch pipes (21, 22) are connected to the intake end of the first intake pipe 2, and the two first branch pipes (21, 22) are used to communicate with two different gas sources, respectively. Two second branch pipes (31, 32) are connected to the intake end of the second intake pipe 3, and the two second branch pipes (31, 32) are used to communicate with two different gas sources, respectively. The multiple gas sources may be, for example, one or more of a reaction gas source, a carrier gas source, a dilution gas source, etc. When carrying out the process, the ventilation of the first intake line 2 or the second intake line 3 may be controlled alone, the ventilation of the first intake line 2 and the second intake line 3 may be controlled alternately, or the ventilation of the first intake line 2 and / or the second intake line 3 may be controlled in pulses.

[0031] In this embodiment, the extending directions of the first intake pipe 2 and the second intake pipe 3 are both perpendicular to the axial direction (i.e., vertical direction) of the gas mixer 1. For example, the extending directions of the first intake pipe 2 and the second intake pipe 3 may be parallel to each other, but the embodiment of the present invention is not limited thereto, and in actual operation, the extending directions of the first intake pipe 2 and the second intake pipe 3 may form any angle less than 90° with the axial direction of the gas mixer 1, and the angles between the extending directions of the first intake pipe 2 and the second intake pipe 3 and the axial direction of the gas mixer 1 may be the same or different, and the embodiment of the present invention is not particularly limited thereto.

[0032] 2, the gas mixer 1 is provided with a first intake passage 11, a second intake passage 12, and an annular gas mixing passage 15. The intake ends of the first intake passage 11 and the second intake passage 12 are connected to the exhaust ends of the first intake pipe 2 and the second intake pipe 3, respectively. The exhaust ends of the first intake passage 11 and the second intake passage 12 are connected to the annular gas mixing passage 15, the exhaust end of which is connected to a process chamber (not shown) of a semiconductor processing device. During ventilation, gas transported through the first intake pipe 2 flows into the annular gas mixing passage 15 via the first intake passage 11 and then into the process chamber via the annular gas mixing passage 15. Similarly, gas transported through the second intake pipe 3 flows into the annular gas mixing passage 15 via the second intake passage 12 and then into the process chamber via the annular gas mixing passage 15.

[0033] The exhaust directions of the first intake passage 11 and the second intake passage 12 are set so that when gases flowing into the annular gas mixing passage 15 from the exhaust ends of the first intake passage 11 and the second intake passage 12, respectively, are mixed, they all rotate and flow in the same circumferential direction of the annular gas mixing passage 15. The flow direction of gas in the annular gas mixing passage 15 rotates clockwise or counterclockwise around the axis of the annular gas mixing passage 15. When gases flowing into the annular gas mixing passage 15 from the exhaust ends of the first intake passage 11 and the second intake passage 12 are mixed, they all rotate clockwise around the axis of the annular gas mixing passage 15 or counterclockwise around the axis of the annular gas mixing passage 15. In this way, the various gases flowing into the annular gas mixing passage 15 are mixed while rotating, i.e., a swirling flow is formed, which improves the smoothness of the gas flow, reduces flow resistance, increases the flow rate, shortens the gas mixing time, improves gas mixing efficiency, and contributes to improving production capacity. At the same time, the various gases can fully exchange momentum and mass mix during rotation, which effectively improves mixing uniformity and further improves product performance.

[0034] In an ALD process, multiple different gases are generally introduced under conditions of high flow rates (e.g., greater than 5000 sccm) and short pulse times (less than 50 ms). The gas mixing device according to the embodiment of the present invention mixes the various gases flowing into the annular gas mixing passage 15 while rotating, thereby satisfies the requirements for gas mixing time and gas mixing uniformity under the above-mentioned intake conditions.

[0035] In addition, the external structure of the gas mixing device according to the embodiment of the present invention is composed of only the gas mixing member 1, the first intake pipe 2 and the second intake pipe 3, which has a simple structure and a high degree of integration, thereby saving space and reducing processing costs.

[0036] In some alternative embodiments, as shown in Figures 6, 7, and 10, the first intake passage 11 includes a plurality of first gas uniformization holes 113 uniformly distributed along the circumferential direction of the annular gas mixing passage 15. As shown in Figure 7, when a connecting line between an orthogonal projection of the exhaust end B1 of each first gas uniformization hole 113 on a radial cross section of the annular gas mixing passage 15 and the center O of the radial cross section is defined as a first connecting line L1, and a connecting line between an orthogonal projection of the intake end B2 of each first gas uniformization hole 113 on the radial cross section and the center O of the radial cross section is defined as a second connecting line L2, an included angle is formed between the first connecting line L1 and the second connecting line L2. That is, the exhaust end B1 and the intake end B2 of each first gas uniformization hole 113 are not located on the same radial direction. For example, the extending direction of each first gas uniformization hole 113 is tangent to the circumferential direction of the annular gas mixing passage 15. In this way, the exhaust direction of each first gas equalization hole 113 is offset from the radial direction, and all of the first gas equalization holes 113 are offset in the same direction, so that the exhaust direction of each first gas equalization hole 113 is as shown by the arrow in Fig. 7. By arranging them in this way, the gas that flows into the annular gas mixing passage 15 from each first gas equalization hole 113 rotates and flows in the same direction (clockwise or counterclockwise), forming a swirling flow.

[0037] In actual operation, the number, size, angle of deviation from the radial direction of the exhaust direction, size, etc. of the first gas equalization holes 113 can be set according to specific needs, and the embodiments of the present invention are not particularly limited thereto.

[0038] Similarly, in some alternative embodiments, as shown in Figures 8, 9, and 10, the second intake passage 12 includes a plurality of second gas uniformization holes 123 uniformly distributed along the circumferential direction of the annular gas mixing passage 15. As shown in Figure 9, when a connecting line between an orthogonal projection of the exhaust end B3 of each second gas uniformization hole 123 on a radial cross section of the annular gas mixing passage 15 and the center O of the radial cross section is defined as a third connecting line L3, and a connecting line between an orthogonal projection of the intake end B4 of each second gas uniformization hole 123 on the radial cross section and the center O of the radial cross section is defined as a fourth connecting line L4, an included angle is formed between the third connecting line L3 and the fourth connecting line L4. In other words, the exhaust end B3 and the intake end B4 of each second gas uniformization hole 123 are not located on the same radial direction. For example, the extension direction of each second gas uniformization hole 123 is tangent to the circumferential direction of the second annular sub-passage 122 (described in detail later). In this way, the exhaust direction of each second gas equalization hole 123 is offset from the radial direction, and all of the second gas equalization holes 123 are offset in the same direction, so that the exhaust direction of each second gas equalization hole 123 is as shown by the arrow in Figure 9. With this arrangement, the gas flowing into the annular gas mixing passage 15 from each second gas equalization hole 123 rotates and flows in the same direction (clockwise or counterclockwise), forming a swirling flow, and the flow direction of the gas flowing into the annular gas mixing passage 15 from each second gas equalization hole 123 is the same as the flow direction of the gas flowing into the annular gas mixing passage 15 from each first gas equalization hole 113, i.e., both clockwise or both counterclockwise. It is easy to understand that since the second intake passage 12 is located inside the annular gas mixing passage 15, the exhaust direction of each second gas equalization hole 123 flows from the center toward the edge, and since the first intake passage 11 is located outside the annular gas mixing passage 15, the exhaust direction of each first gas equalization hole 113 flows in a direction that goes around from the edge.

[0039] In actual operation, the number, size, radial offset angle, and size of the second gas equalization holes 123 can be set according to specific needs, and the embodiment of the present invention is not particularly limited thereto. The above parameters of the second gas equalization holes 123 may be the same as or different from the above parameters of the first gas equalization holes 113.

[0040] In a specific implementation, the direction of the first gas uniformization holes 113 may be perpendicular to the axial direction of the gas mixer 1 or may have a certain inclination relative to the axial direction of the gas mixer 1, and is not limited thereto. Similarly, the direction of the second gas uniformization holes 123 may be perpendicular to the axial direction of the gas mixer 1 or may have a certain inclination relative to the axial direction of the gas mixer 1, and is not limited thereto.

[0041] In some alternative embodiments, the height of the exhaust end of the first gas uniformization hole 113 (i.e., the point where the first gas uniformization hole 113 communicates with the annular gas mixing passage 15) is different from the height of the exhaust end of the second gas uniformization hole 123 (i.e., the point where the second gas uniformization hole 123 communicates with the annular gas mixing passage 15). For example, the directions of the first gas uniformization hole 113 and the second gas uniformization hole 123 are both perpendicular to the axial direction of the gas mixing element 1. As shown in FIG. 10 , the heights at which the first gas uniformization hole 113 and the second gas uniformization hole 123 are located are different, i.e., the first gas uniformization hole 113 and the second gas uniformization hole 123 are offset from each other in the vertical direction, thereby preventing the gases from the two passages flowing out of the first gas uniformization hole 113 and the second gas uniformization hole 123 from directly contacting each other in the annular gas mixing passage 15. By vertically offsetting the first gas equalization holes 113 and the second gas equalization holes 123, one gas flowing into the annular gas mixing passage 15 from one of the first gas equalization holes 113 and the second gas equalization holes 123 can first rotate and flow for a certain distance before coming into contact with the other gas flowing into the annular gas mixing passage 15 from the other of the first gas equalization holes 113 and the second gas equalization holes 123. This contributes to the formation of a stable swirling flow before the gases are mixed, preventing direct contact from causing turbulence and resulting in uncontrollable mixing. In actual application, the height at which the first gas equalization holes 113 are located can be higher or lower than the height at which the second gas equalization holes 123 are located.

[0042] 2, 3 and 10, in some alternative embodiments, the first intake passage 11 further includes a first annular sub-passage 112 and a first connecting sub-passage 111. Here, the first annular sub-passage 112 surrounds the outside of the annular gas mixing passage 15, and a plurality of first gas homogenizing holes 113 are located between the first annular sub-passage 112 and the annular gas mixing passage 15, with the intake end of each first gas homogenizing hole 113 communicating with the first annular sub-passage 112 and the exhaust end of each first gas homogenizing hole 113 communicating with the annular gas mixing passage 15. Optionally, the upper end of the first annular sub-passage 112 is higher than the upper end of the annular gas mixing passage 15 and the lower end of the first annular sub-passage 112 is lower than the upper end of the annular gas mixing passage 15, so that the first annular sub-passage 112 and the annular gas mixing passage 15 partially overlap in the vertical direction, and the plurality of first gas homogenization holes 113 communicate with the first annular sub-passage 112 and the annular gas mixing passage 15 at the overlapping position.

[0043] Furthermore, both ends of the first connecting sub-passage 111 communicate with the first annular sub-passage 112 and the exhaust end of the first intake pipe 2, respectively. In some optional embodiments, the intake end of the first connecting sub-passage 111 is located on the side of the gas mixer 1, thereby realizing lateral intake and thus providing space for an intake structure on one side of the upper surface of the gas mixer. Furthermore, optionally, the axial directions (i.e., vertical directions) of the first connecting sub-passage 111 and the annular gas mixing passage 15 are perpendicular to each other, but this is not limited to this embodiment, and in actual operation, the angle between the first connecting sub-passage 111 and the axial direction of the annular gas mixing passage 15 can be less than 90°.

[0044] Gas transported through the first intake pipe 2 can flow into the first annular sub-passage 112 via the first connecting sub-passage 111. The exhaust direction of the first connecting sub-passage 111 is set so that the gas flowing into the first annular sub-passage 112 rotates and the gas flow direction in the first annular sub-passage 112 is the same as the gas flow direction in the annular gas mixing passage 15, i.e., the gas rotates clockwise or counterclockwise around the axis of the annular gas mixing passage 15. In this way, the gas flowing into the first annular sub-passage 112 also rotates and mixes with the gas, forming a swirling flow, the direction of which in the first annular sub-passage 112 is the same as the direction of the swirling flow in the annular gas mixing passage 15. That is, when the swirling flow direction in the first annular sub-passage 112 is counterclockwise, the swirling flow direction in the annular gas mixing passage 15 is also counterclockwise, and when the swirling flow direction in the first annular sub-passage 112 is clockwise, the swirling flow direction in the annular gas mixing passage 15 is also clockwise. By aligning the swirling flow direction in the first annular sub-passage 112 with the swirling flow direction in the annular gas mixing passage 15, when the gas in the first annular sub-passage 112 flows into the annular gas mixing passage 15 through the first gas homogenization holes 113, it continues to rotate and flow in the same swirling direction, thereby avoiding the generation of turbulence and the loss of smoothness of flow. Furthermore, by mixing the gas flowing into the first annular sub-passage 112 while rotating, a swirling flow is formed in the gas flowing into the annular gas mixing passage 15, further improving the smoothness of the gas flow and the uniformity of mixing.

[0045] 2, 4 and 10, the second intake passage 12 further includes a second annular sub-passage 122 and a second connecting sub-passage 121. The second annular sub-passage 122 surrounds the inside of the annular gas mixing passage 15, and a plurality of second gas homogenizing holes 123 are located between the second annular sub-passage 122 and the annular gas mixing passage 15, with the intake end of each second gas homogenizing hole 123 communicating with the second annular sub-passage 122 and the exhaust end of each second gas homogenizing hole 123 communicating with the annular gas mixing passage 15. Optionally, the upper end of the second annular sub-passage 122 is higher than the upper end of the annular gas mixing passage 15 and the lower end of the second annular sub-passage 122 is lower than the upper end of the annular gas mixing passage 15, so that the second annular sub-passage 122 and the annular gas mixing passage 15 partially overlap in the vertical direction, and the plurality of second gas homogenization holes 123 communicate with the second annular sub-passage 122 and the annular gas mixing passage 15 at the overlapping position.

[0046] The second connecting sub-passage 121 is located at a different height from the first connecting sub-passage 111; that is, they are offset from each other in the axial direction of the annular gas mixing passage 15. For example, as shown in FIG. 10 , the second connecting sub-passage 121 is higher than the first connecting sub-passage 111, and the upper end of the second annular sub-passage 122 is correspondingly higher than the upper end of the first annular sub-passage 112. In this way, the first annular sub-passage 112, which is located on the outer periphery, can secure an escape space above it for the second connecting sub-passage 121, and as a result, both ends of the second connecting sub-passage 121 can extend to the second annular sub-passage 122, which is located on the inner periphery, and the exhaust end of the second intake pipe 3, respectively, and communicate with both.

[0047] In some alternative embodiments, the intake end of the second connecting sub-passage 121 is located on the side of the gas mixing member 1, thereby realizing lateral intake, and thus providing space for providing an intake structure on one side of the upper surface of the gas mixing member. Optionally, the axial directions of the second connecting sub-passage 121 and the annular gas mixing passage 15 are perpendicular to each other, but the present invention is not limited thereto, and in actual operation, the angle between the axial direction of the second connecting sub-passage 121 and the axial direction of the annular gas mixing passage 15 may be less than 90°.

[0048] Gas transported through the second intake pipe 3 can flow into the second annular sub-passage 122 via the second connecting sub-passage 121. The exhaust direction of the second connecting sub-passage 121 is set so that the gas flowing into the second annular sub-passage 122 rotates and the gas flow direction in the second annular sub-passage 122 is the same as the gas flow direction in the annular gas mixing passage 15, i.e., rotates clockwise or counterclockwise around the axis of the annular gas mixing passage 15. In this way, the gas flowing into the second annular sub-passage 122 also rotates and mixes with the gas, forming a swirling flow, the direction of which in the second annular sub-passage 122 is the same as the direction of the swirling flow in the annular gas mixing passage 15. That is, when the swirling flow direction in the second annular sub-passage 122 is counterclockwise, the swirling flow direction in the annular gas mixing passage 15 is also counterclockwise, and when the swirling flow direction in the second annular sub-passage 122 is clockwise, the swirling flow direction in the annular gas mixing passage 15 is also clockwise. By matching the swirling flow direction in the second annular sub-passage 122 with the swirling flow direction in the annular gas mixing passage 15, when the gas in the second annular sub-passage 122 flows into the annular gas mixing passage 15 through the second gas homogenization holes 123, it continues to rotate and flow in the same swirling direction, thereby avoiding the generation of turbulence and the loss of smoothness of flow. Furthermore, by mixing the gas flowing into the second annular sub-passage 122 while rotating, a swirling flow is formed in the gas flowing into the annular gas mixing passage 15, further improving the smoothness of the gas flow and the uniformity of mixing.

[0049] In some alternative embodiments, as shown in Fig. 5, taking the second annular sub-passage 122 and the second connecting sub-passage 121 as an example, the orthogonal projection of the axis of the second connecting sub-passage 121 in the radial cross section of the gas mixer 1 may overlap, be parallel to, or form an angle with any one of the radial directions in the radial cross section. For example, Fig. 5(a) shows that the axis A1 of the second connecting sub-passage 121 and the radial direction A2 are parallel to each other, Fig. 5(b) shows that the axis A1 of the second connecting sub-passage 121 and the radial direction A2 overlap each other, and Fig. 5(c) shows that the axis A1 of the second connecting sub-passage 121 and the radial direction A2 form an angle. The installation method of the first annular sub-passage 112 and the first connecting sub-passage 111 is similar to that of the second annular sub-passage 122 and the second connecting sub-passage 121. That is, the orthogonal projection of the axis of the first connecting sub-passage 111 in the radial cross section of the gas mixer 1 overlaps with, is parallel to, or forms an included angle with any one of the radial directions in the radial cross section.

[0050] The first connecting sub-passage 111 and the second connecting sub-passage 121 may be parallel to each other or may form an angle in the horizontal plane, as long as the magnitude of the angle ensures that the direction of the swirling flow of gas flowing from the second connecting sub-passage 121 to the second annular sub-passage 122 and the direction of the swirling flow of gas flowing from the first connecting sub-passage 111 to the first annular sub-passage 112 are both consistent with the direction of the swirling flow in the annular gas mixing passage 15.

[0051] Second Example The gas mixing apparatus according to the second embodiment of the present invention is an improvement over the first embodiment. Specifically, referring to FIGS. 11 and 12 , based on the first embodiment, the gas mixing apparatus further includes a third intake pipe 4 and an on-off valve 5 provided in the third intake pipe 4 for turning the third intake pipe 4 on and off. The intake end of the third intake pipe 4 may be connected to, for example, a remote plasma source (used to provide a cleaning gas carrying plasma radicals) to perform a plasma cleaning process on the pipe and the process chamber to remove particulate matter generated in the process. However, the present invention is not limited thereto. In actual operation, the intake end of the third intake pipe 4 may be connected to at least one of a purge gas source and a source gas source.

[0052] As shown in FIG. 11 , the gas mixer 1 further includes a third intake passage 17, which is located above the annular gas mixing passage 15. The intake end of the third intake passage 17 is connected to the exhaust end of the third intake conduit 4, and the exhaust end of the third intake passage 17 is connected to at least one of the first annular sub-passage 112 and the second annular sub-passage 122. Gas transported by the third intake conduit 4 flows into at least one of the first annular sub-passage 112 and the second annular sub-passage 122 via the third intake passage 17. By using the third intake conduit 4 and the third intake passage 17, cleaning or purging gas can be introduced into the conduits, passages, and chambers from the top of the gas mixer during cleaning or purging processes. This allows for thorough cleaning and purging from the top of the gas mixer, preventing residue from remaining in the top dead zone and improving the cleaning and purging effects.

[0053] In some alternative embodiments, as shown in Figures 13, 14, and 15, the third intake passage 17 includes a plurality of third gas equalization holes 172 uniformly distributed along the circumferential direction of the annular gas mixing passage 15, with the intake end of each third gas equalization hole 172 communicating with the exhaust end of the third intake pipe 4 and the exhaust end of each third gas equalization hole 172 communicating with the first annular sub-passage 112, thereby uniformly transporting gas in the third intake pipe 4 to the first annular sub-passage 112. However, the present invention is not limited thereto. For example, as shown in Figure 16, the exhaust end of each third gas equalization hole 172 may communicate with the second annular sub-passage 122, thereby uniformly transporting gas in the third intake pipe 4 to the second annular sub-passage 122. Alternatively, as shown in Figure 17, the third intake passage 17 may include two hole groups, each hole group including a plurality of third gas uniformization holes evenly distributed along the circumferential direction of the annular gas mixing passage 15. The intake ends of the plurality of third gas uniformization holes 172a in one of the hole groups are connected to the exhaust end of the third intake conduit 4, and the exhaust ends of each of the third gas uniformization holes 172a are connected to the first annular sub-passage 112, so as to uniformly transport gas in the third intake conduit 4 to the first annular sub-passage 112. The intake ends of the plurality of third gas uniformization holes 172b in the other hole group are connected to the exhaust end of the third intake conduit 4, and the exhaust ends of each of the third gas uniformization holes 172b are connected to the second annular sub-passage 122, so as to uniformly transport gas in the third intake conduit 4 to the second annular sub-passage 122.

[0054] 12 and 14 to 18, the third intake passage 17 further includes a third connecting sub-passage 171, the intake end of which is connected to the exhaust end of the third intake pipe 4 and the exhaust end of which is connected to the intake ends of the plurality of third gas homogenizing holes 172. Optionally, the axis of the third connecting sub-passage 171 is parallel to the axial direction of the annular gas mixing passage 15, so that the intake end of the third connecting sub-passage 171 is located on the top surface of the gas mixing member 1, thereby realizing top intake.

[0055] In some alternative embodiments, as shown in FIGS. 18 and 19 , the on-off valve includes a valve element 51 and a valve plate 52. The valve element 51 is connected between the third intake pipe 4 and the gas mixer 1. A connecting passage 511 is provided in the valve element 51. The connecting passage 511 is connected to the exhaust end of the third intake pipe 4 and the intake end of the third intake passage 17 (e.g., the third connecting sub-passage 171). The valve plate 52 is movably mounted on the connecting passage 511 and is used to open or close the connecting passage 511, thereby opening, closing, or sealing the gas passage. The valve plate 52 is provided with at least one through-hole 521 through which gas of a predetermined flow rate or less can pass. The through-hole 521 allows a small flow rate of gas to pass through the through-hole 521 even when the valve plate 52 blocks the passage 511. This prevents downstream gas from flowing back and prevents particulate matter from escaping into the upstream pipe, and ensures the cleanliness of the pipe. When cleaning or purging is required, the valve plate 52 is controlled to open, allowing a large flow of cleaning gas or purge gas to pass through the connecting passage 511 and flow into the third intake passage 17. The number of through holes 521 may be three or more, and the multiple through holes 521 may be distributed evenly or unevenly on the valve plate 52. The radial cross-sectional shape of the through holes 521 may be, for example, circular, rectangular, square, or elliptical, and in actual operation, the amount of air passing through can be adjusted by setting the number of through holes 521 and the cross-sectional area of ​​the holes.

[0056] In another alternative embodiment, a butterfly valve may be used instead of the on-off valve, and switching between a low-flow constant ventilation state and a high-flow ventilation state can be achieved by adjusting the valve core opening of the butterfly valve.

[0057] 12 and 18, in some alternative embodiments, a guide protrusion 19 is provided on the surface of the gas mixer 1 facing the exhaust end of the third intake pipe 4, and the surface of the guide protrusion 19 facing the exhaust end of the third intake pipe 4 has an arc-shaped convex surface 191, which is used to divert the gas flowing into the third connecting sub-passage 171 to the intake ends of the plurality of third gas equalization holes 172. The guide protrusion 19 not only guides the flow but also reduces dead zones in the flow, thereby preventing residual gas.

[0058] 11 , the gas mixing element 1 further includes a confluence passage 16 below the annular gas mixing passage 15, the confluence passage 16 including a third annular sub-passage 161 and a vertical sub-passage 162. The intake end of the third annular sub-passage 161 is connected to the exhaust end of the annular gas mixing passage 15, and the exhaust end of the third annular sub-passage 161 is connected to the intake end of the vertical sub-passage 162. The inner and outer diameters of the third annular sub-passage 161 gradually decrease from the annular gas mixing passage 15 toward the vertical sub-passage 162, the diameter of the vertical sub-passage 162 being equal to the minimum outer diameter of the third annular sub-passage 161, and the outer diameter of the annular gas mixing passage 15 being equal to the maximum outer diameter of the third annular sub-passage 161. The exhaust end of the vertical sub-passage 162 is connected to a process chamber of a semiconductor processing device. The gas thoroughly mixed in the annular gas mixing passage 15 is collected by the action of the third annular sub-passage 161 and flows downward in the vertical direction by the flow guide action of the vertical sub-passage 162 .

[0059] As described above, the gas mixing device according to each of the above embodiments of the present invention configures the exhaust direction of the first and second intake passages so that the gases flowing from the exhaust ends of the first and second intake passages into the annular gas mixing passage rotate in the same circumferential direction (i.e., clockwise or counterclockwise) around the annular gas mixing passage when they mix. This allows various gases to mix while rotating, i.e., forming a swirling flow, thereby improving the smoothness of the gas flow, reducing flow resistance, increasing flow velocity, shortening the gas mixing time, and improving gas mixing efficiency, thereby contributing to improved production capacity. Furthermore, various gases can fully exchange momentum and mass mix during rotation, thereby effectively improving mixing uniformity and further improving product performance. Furthermore, the external structure of the gas mixing device according to the present invention is composed only of a gas mixing element, a first intake pipe, and a second intake pipe, resulting in a simple structure and high integration, thereby saving space and reducing processing costs.

[0060] Third Example 20 , a third embodiment of the present invention further provides a semiconductor processing apparatus, which includes a process chamber 6 and a gas mixing apparatus according to any of the above embodiments of the present invention, and the gas mixing apparatus is used to introduce a mixed gas into the process chamber 6. The process chamber 6 is further provided with a base 64 for supporting a wafer, and the base 64 may further be provided with a heating device for heating the wafer. In addition, an exhaust pipe 65 is provided at the bottom of the process chamber 6 to exhaust gas from the process chamber 6.

[0061] 20 and 21 , the process chamber 6 includes a chamber 61, a cover plate 62 provided on the top of the chamber 61, and a shower device 63, the shower device 63 being located below the cover plate 62. The gas mixing member 1 is provided on the cover plate 62, and a first inlet 621 is provided in the cover plate 62 corresponding to the exhaust end of the vertical sub-passage 162. An arc-shaped fillet is provided at one end of the first inlet 621 near the shower device 63 to improve the smoothness of the gas flow. In actual operation, the confluence passage 16 can be omitted, in which case the exhaust end of the annular gas mixing passage 15 communicates with the first inlet 621.

[0062] 21 and 22, the first inlet 621 is provided with a guide plug 7, which has a plurality of through holes 71 for converting the flow direction of the mixed gas passing through it to a vertically downward direction. The guide plug 7 can baffle and guide the downward flowing gas (i.e., after the gas in a swirling flow collides with the hole wall of the guide plug 7, the radial component of its flow velocity is nearly zero), thereby converting the gas from a swirling flow to a vertically downward flow, which is advantageous for the shower device 63 to divide the gas and further ensures that the gas entering the process chamber does not rotate, thereby ensuring controllability of the film formation process.

[0063] In some alternative embodiments, as shown in Fig. 22, the plurality of through holes 71 includes a plurality of first through holes 71a and a plurality of second through holes 71b, wherein the radial cross-sectional shape of the first through holes 71a is hexagonal, the plurality of first through holes 71a are arranged in a honeycomb pattern, and at least one second through hole 71b is provided between each two adjacent first through holes 71a in the plurality of first through holes 71a located at the outermost periphery, and the radial cross-sectional area of ​​the second through hole 71b is smaller than the radial cross-sectional area of ​​the first through hole 71a. Specifically, as shown in Fig. 22, six first through holes 71a surround one first through hole 71a, and one second through hole 71b is provided between each two adjacent first through holes 71a in the six first through holes 71a. By arranging the plug 7 in this manner, the ratio of the area of ​​the wall surface (i.e., the non-through-hole region) of the plug 7 to the total radial cross-sectional area of ​​the plug 7 can be minimized, thereby minimizing flow resistance and ensuring smooth gas flow. In actual applications, the first through-hole 71a may surround the plug 7 multiple times around its axis. The radial cross-sectional shape of the first through-hole 71a may be any other shape, such as a circle, square, triangle, rhombus, or trapezoid. The radial cross-sectional shape of the second through-hole 71b may also be any shape, such as a circle, square, triangle, hexagon, rhombus, or trapezoid.

[0064] In another alternative embodiment, as shown in FIG. 23, the plurality of through holes 71 includes one first through hole 71a having a circular radial cross-sectional shape and one or more second through holes 71b having annular radial cross-sectional shapes. Here, the second through hole 71b surrounds the first through hole 71a, and the plurality of second through holes 71b are nested within each other. Each second through hole 71b further includes at least one reinforcing rib 72 extending along the radial direction of the second through hole 71b to improve the strength of the wall surface. For example, there may be multiple reinforcing ribs 72, which are evenly distributed along the circumferential direction of the second through hole 71b. 23, there are two second through holes 71b, each surrounding the first through hole 71a, one of the second through holes 71b surrounding the other second through hole 71b, four reinforcing ribs 72 evenly distributed in the second through hole 71b located on the inner periphery, and eight reinforcing ribs evenly distributed in the second through hole 71b located on the outer periphery, and the eight reinforcing ribs 72 located on the outer periphery and the four reinforcing ribs 72 located on the inner periphery are offset from each other in the circumferential direction of the second through hole 71b, thereby uniformly improving the wall strength. Optionally, the number of second through holes 71b may be 2 to 4.

[0065] In actual applications, the layout of the through holes 71 is not limited to the above two types, and any other layout method can be used in actual applications, as long as the strength of the wall surface (i.e., the non-through hole region) is ensured and the ratio of the wall surface area to the total radial cross-sectional area of ​​the flow guide plug 7 is minimized, thereby maximizing the reduction of flow resistance and ensuring smooth gas flow. Optionally, the thickness of a single hole wall is 0.5 mm or more and 2 mm or less.

[0066] In some selectable embodiments, as shown in FIG. 21 , a tapered passage 622 is provided on the surface of the cover plate 62 facing the shower device 63, and the upper end of the tapered passage 622 communicates with the first air intake port 621, and the lower end of the tapered passage 622 communicates with the second air intake port 631 of the shower device 63, and the inner diameter of the tapered passage 622 is First intake port 621 The pressure gradually increases from the first gas inlet 622 toward the second gas inlet 631. In this way, the sidewall of the tapered passage 622 can form an inverted "funnel"-shaped space, which can compress the gas flowing out from the second gas inlet 631, allowing it to diffuse to the edges more quickly, improving the gas diffusion rate and thereby improving the uniformity of the gas distribution by the shower device 63. At the same time, the overall volume of the chamber can be further reduced, which is advantageous for saving cleaning or purging time and improving process efficiency.

[0067] The semiconductor processing apparatus according to the embodiments of the present invention uses the gas mixing apparatus according to the above embodiments of the present invention, which can shorten the gas mixing time, improve the gas mixing efficiency, and contribute to improving production capacity, as well as effectively improve the mixing uniformity and further improve product performance. Taking the semiconductor processing apparatus shown in Figure 20 as an example, experiments have found that the mass distribution uniformity of the source gas on the wafer surface is less than 2%, and the film thickness uniformity is less than 1%, effectively improving the process uniformity.

[0068] The above embodiments are merely exemplary embodiments used to explain the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art can make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A gas mixing device applicable to a semiconductor process equipment, comprising: a gas mixing member, a first intake pipe and a second intake pipe, the gas mixing member being provided with a first intake passage, a second intake passage and an annular gas mixing passage; the intake ends of the first intake passage and the second intake passage communicate with the exhaust ends of the first intake pipe and the second intake pipe, respectively; the exhaust ends of the first intake passage and the second intake passage both communicate with the annular gas mixing passage, and the exhaust end of the annular gas mixing passage communicates with a process chamber of the semiconductor processing device; The exhaust directions of the first intake passage and the second intake passage are set so that when gases flowing from the exhaust ends of the first intake passage and the second intake passage into the annular gas mixing passage are mixed, the gases rotate and flow in the same direction in the circumferential direction of the annular gas mixing passage. the first intake passage includes a plurality of first gas equalization holes uniformly distributed along a circumferential direction of the annular gas mixing passage, wherein a connecting line between an orthogonal projection of an exhaust end of each of the first gas equalization holes in a radial cross section of the annular gas mixing passage and a center of the radial cross section is defined as a first connecting line, and a connecting line between an orthogonal projection of an intake end of each of the first gas equalization holes in the radial cross section and the center of the radial cross section is defined as a second connecting line, an included angle exists between the first connecting line and the second connecting line, the second intake passage includes a plurality of second gas equalization holes uniformly distributed along a circumferential direction of the annular gas mixing passage, wherein a connecting line between an orthogonal projection of an exhaust end of each of the second gas equalization holes in a radial cross section of the annular gas mixing passage and a center of the radial cross section is defined as a third connecting line, and a connecting line between an orthogonal projection of an intake end of each of the second gas equalization holes in the radial cross section and a center of the radial cross section is defined as a fourth connecting line, an included angle exists between the third connecting line and the fourth connecting line, The gas mixing device, wherein the second gas homogenizing hole and the first gas homogenizing hole are offset from each other in the axial direction of the annular gas mixing passage.

2. the first intake passage further includes a first annular sub-passage and a first connecting sub-passage, the first annular sub-passage surrounds the outside of the annular gas mixing passage, the first gas homogenizing holes are located between the first annular sub-passage and the annular gas mixing passage, an intake end of each of the first gas homogenizing holes communicates with the first annular sub-passage, and an exhaust end of each of the first gas homogenizing holes communicates with the annular gas mixing passage; 2. The gas mixing device according to claim 1, wherein both ends of the first connecting sub-passage are connected to the first annular sub-passage and the exhaust end of the first intake pipe, respectively, and the exhaust direction of the first connecting sub-passage is set so that gas flowing into the first annular sub-passage rotates and flows, and the gas flow direction in the first annular sub-passage is the same as the gas flow direction in the annular gas mixing passage.

3. the second intake passage further includes a second annular sub-passage and a second connecting sub-passage, the second annular sub-passage surrounds the inside of the annular gas mixing passage, the second gas homogenizing holes are located between the second annular sub-passage and the annular gas mixing passage, an intake end of each second gas homogenizing hole communicates with the second annular sub-passage, and an exhaust end of each second gas homogenizing hole communicates with the annular gas mixing passage; 3. The gas mixing device according to claim 2, wherein the second connecting sub-passage and the first connecting sub-passage are offset from each other in the axial direction of the annular gas mixing passage, both ends of the second connecting sub-passage are connected to the second annular sub-passage and the exhaust end of the second intake pipe, respectively, and the exhaust direction of the second connecting sub-passage is set so that gas flowing into the second annular sub-passage rotates and flows, and the gas flow direction in the second annular sub-passage is the same as the gas flow direction in the annular gas mixing passage.

4. an orthogonal projection of an axis of the first connecting sub-passage on a radial cross section of the gas mixing member overlaps with, is parallel to, or forms an included angle with any one radial direction on the radial cross section; 4. The gas mixing device according to claim 3, wherein an orthogonal projection of an axis of the second connecting sub-passage in a radial cross section of the gas mixing member overlaps with, is parallel to, or forms an included angle with any one radial direction in the radial cross section.

5. the gas mixing device further includes a third intake pipe and an on-off valve provided in the third intake pipe, 4. The gas mixing device according to claim 3, wherein the gas mixing member further includes a third intake passage, the third intake passage being located above the annular gas mixing passage, an intake end of the third intake passage communicating with an exhaust end of the third intake pipe line, and an exhaust end of the third intake passage communicating with at least one of the first annular sub-passage and the second annular sub-passage.

6. the third intake passage includes a plurality of third gas equalization holes uniformly distributed along the circumferential direction of the annular gas mixing passage, an intake end of each of the third gas equalization holes communicates with an exhaust end of the third intake pipe, and an exhaust end of each of the third gas equalization holes communicates with the first annular sub-passage or the second annular sub-passage; or 6. The gas mixing device according to claim 5, wherein the third intake passage includes two groups of holes, each group including a plurality of third gas homogenizing holes uniformly distributed along the circumferential direction of the annular gas mixing passage, and wherein the intake ends of the plurality of third gas homogenizing holes in one of the groups of holes are connected to the exhaust end of the third intake conduit and the exhaust end is connected to the first annular sub-passage, and the intake ends of the plurality of third gas homogenizing holes in the other group of holes are connected to the exhaust end of the third intake conduit and the exhaust end is connected to the second annular sub-passage.

7. the on-off valve includes a valve body and a valve plate, the valve body is connected between the third intake pipe line and the gas mixing member, a connecting passage is provided in the valve body, and the connecting passage communicates with an exhaust end of the third intake pipe line and an intake end of the third intake passage, 7. The gas mixing device according to claim 6, wherein the valve plate is movably provided in the connecting passage and is used to open or close the connecting passage, and the valve plate is provided with at least one through-hole for passing gas at a flow rate not exceeding a preset flow rate.

8. the third intake passage further includes a third connecting sub-passage, an intake end of the third connecting sub-passage communicating with an exhaust end of the third intake pipe line, and an exhaust end of the third connecting sub-passage communicating with intake ends of the plurality of third gas equalization holes; 7. The gas mixing device according to claim 6, wherein a flow guide protrusion is provided on a surface of the gas mixing member facing the exhaust end of the third intake pipe, and the surface of the flow guide protrusion facing the exhaust end of the third intake pipe is an arc-shaped convex surface used to divide the gas flowing into the third connecting sub-passage toward the intake ends of the plurality of third gas homogenizing holes.

9. the gas mixing member further has a merging passage located below the annular gas mixing passage, the merging passage including a third annular sub-passage and a vertical sub-passage, an intake end of the third annular sub-passage communicating with an exhaust end of the annular gas mixing passage and an exhaust end of the third annular sub-passage communicating with an intake end of the vertical sub-passage, and both an inner diameter and an outer diameter of the third annular sub-passage gradually decreasing from the annular gas mixing passage toward the vertical sub-passage; 2. The gas mixing apparatus of claim 1, wherein the exhaust end of the vertical sub-passage is adapted to communicate with a process chamber of the semiconductor processing apparatus.

10. 1. A semiconductor processing apparatus including a process chamber, 10. A semiconductor processing apparatus, further comprising the gas mixing apparatus of claim 1 for introducing a mixed gas into the process chamber.

11. the process chamber includes a chamber body, a cover plate provided on a top of the chamber body, and a shower device, the shower device being located below the cover plate; 11. The semiconductor processing apparatus of claim 10, wherein the gas mixing member is disposed above the cover plate, the cover plate is provided with a first intake port corresponding to an exhaust end of the annular gas mixing passage, the first intake port is provided with a flow guide plug, and the flow guide plug is provided with a plurality of through holes for redirecting the flow direction of the mixed gas passing through it to a vertical downward direction.

12. the plurality of through holes include a plurality of first through holes and a plurality of second through holes, the plurality of first through holes surrounding the axis of the flow guide plug at least once; 12. The semiconductor processing device of claim 11, wherein, among the plurality of first through holes located on the outermost periphery, at least one second through hole is provided between each two adjacent first through holes, and the radial cross-sectional area of ​​the second through hole is smaller than the radial cross-sectional area of ​​the first through hole.

13. the plurality of through holes include one first through hole having a circular radial cross-sectional shape and one or more second through holes having an annular radial cross-sectional shape; 12. The semiconductor processing device of claim 11, wherein the second through hole surrounds the first through hole, the second through holes are nested within each other, and each second through hole is further provided with at least one reinforcing rib extending radially of the second through hole, and both ends of the reinforcing rib along the radial direction of the second through hole are connected to the inner and outer walls of the second through hole, respectively.

14. 12. The semiconductor process apparatus of claim 11, wherein a tapered passage is provided on a surface of the cover plate facing the shower device, an upper end of the tapered passage communicating with the first intake port and a lower end of the tapered passage communicating with a second intake port of the shower device, the inner diameter of the tapered passage gradually increasing from the first intake port toward the second intake port.

15. A semiconductor processing apparatus including a process chamber, comprising: a gas mixing device for introducing a gas mixture into the process chamber; The gas mixing device includes: a gas mixing member, a first intake line, and a second intake line; the gas mixing member is provided with a first intake passage, a second intake passage and an annular gas mixing passage; the intake ends of the first intake passage and the second intake passage communicate with the exhaust ends of the first intake pipe and the second intake pipe, respectively; the exhaust ends of the first intake passage and the second intake passage both communicate with the annular gas mixing passage, and the exhaust end of the annular gas mixing passage communicates with a process chamber of the semiconductor processing device; the exhaust directions of the first intake passage and the second intake passage are set so that when gases flowing into the annular gas mixing passage from the exhaust ends of the first intake passage and the second intake passage, respectively, are mixed, they rotate and flow in the same direction in the circumferential direction of the annular gas mixing passage, the process chamber includes a chamber body, a cover plate provided on a top of the chamber body, and a shower device, the shower device being located below the cover plate; the gas mixing member is provided above the cover plate, the cover plate is provided with a first intake port corresponding to the exhaust end of the annular gas mixing passage, the first intake port is provided with a flow guide plug, and the flow guide plug is provided with a plurality of through holes for changing the flow direction of the mixed gas passing through it to a vertically downward direction; the plurality of through holes include a plurality of first through holes and a plurality of second through holes, the plurality of first through holes surrounding the axis of the flow guide plug at least once; A semiconductor processing device characterized in that, among the multiple first through holes located on the outermost periphery, at least one second through hole is provided between each two adjacent first through holes, and the radial cross-sectional area of ​​the second through hole is smaller than the radial cross-sectional area of ​​the first through hole.

16. A semiconductor processing apparatus including a process chamber, comprising: a gas mixing device for introducing a gas mixture into the process chamber; The gas mixing device includes: a gas mixing member, a first intake line, and a second intake line; the gas mixing member is provided with a first intake passage, a second intake passage and an annular gas mixing passage; the intake ends of the first intake passage and the second intake passage communicate with the exhaust ends of the first intake pipe and the second intake pipe, respectively; the exhaust ends of the first intake passage and the second intake passage both communicate with the annular gas mixing passage, and the exhaust end of the annular gas mixing passage communicates with a process chamber of the semiconductor processing device; the exhaust directions of the first intake passage and the second intake passage are set so that when gases flowing into the annular gas mixing passage from the exhaust ends of the first intake passage and the second intake passage, respectively, are mixed, they rotate and flow in the same direction in the circumferential direction of the annular gas mixing passage, the process chamber includes a chamber body, a cover plate provided on a top of the chamber body, and a shower device, the shower device being located below the cover plate; the gas mixing member is provided above the cover plate, the cover plate is provided with a first intake port corresponding to the exhaust end of the annular gas mixing passage, the first intake port is provided with a flow guide plug, and the flow guide plug is provided with a plurality of through holes for changing the flow direction of the mixed gas passing through it to a vertically downward direction; the plurality of through holes include one first through hole having a circular radial cross-sectional shape and one or more second through holes having an annular radial cross-sectional shape; a semiconductor processing device characterized in that the second through hole surrounds the first through hole, the second through holes are nested within each other, and each second through hole is further provided with at least one reinforcing rib extending radially of the second through hole, and both ends of the reinforcing rib along the radial direction of the second through hole are connected to the inner and outer walls of the second through hole, respectively.

17. A semiconductor processing apparatus including a process chamber, comprising: a gas mixing device for introducing a gas mixture into the process chamber; The gas mixing device includes: a gas mixing member, a first intake line, and a second intake line; the gas mixing member is provided with a first intake passage, a second intake passage and an annular gas mixing passage; the intake ends of the first intake passage and the second intake passage communicate with the exhaust ends of the first intake pipe and the second intake pipe, respectively; the exhaust ends of the first intake passage and the second intake passage both communicate with the annular gas mixing passage, and the exhaust end of the annular gas mixing passage communicates with a process chamber of the semiconductor processing device; the exhaust directions of the first intake passage and the second intake passage are set so that when gases flowing into the annular gas mixing passage from the exhaust ends of the first intake passage and the second intake passage, respectively, are mixed, they rotate and flow in the same direction in the circumferential direction of the annular gas mixing passage, the process chamber includes a chamber body, a cover plate provided on a top of the chamber body, and a shower device, the shower device being located below the cover plate; the gas mixing member is provided above the cover plate, the cover plate is provided with a first intake port corresponding to the exhaust end of the annular gas mixing passage, the first intake port is provided with a flow guide plug, and the flow guide plug is provided with a plurality of through holes for changing the flow direction of the mixed gas passing through it to a vertically downward direction; a tapered passage is provided on a surface of the cover plate facing the shower device, an upper end of the tapered passage communicates with the first air inlet and a lower end of the tapered passage communicates with a second air inlet of the shower device, and an inner diameter of the tapered passage gradually increases from the first air inlet toward the second air inlet.

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