electronic machinery

Abstract

To provide a display device that facilitates imaging when imaging your own face looking at the screen in a dark place, and a display device that makes it easier to check your own face, etc. looking at the screen in a dark place.SOLUTION: A display device includes a first region and a second region. The first region has a function of being able to display an image of a subject. The second region has a function of being able to irradiate the subject with light. An electronic appliance includes the display device and an imaging device. The display device includes the first region and the second region. The first region has a function of being able to display the image of the subject obtained from the imaging device. The second region has a function of being able to irradiate the subject with light.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a light source for an imaging device, a display device, or a driving method thereof. In particular, one aspect of the present invention is a program for an imaging device or a display device, The present invention relates to a recording medium on which a program is recorded, and an electronic device having the recording medium.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one aspect of the present invention is a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof, as examples. Some examples include: [Background technology]

[0003] Electronic devices equipped with imaging elements such as image sensors or camera functions have been developed. In particular, the development of portable electronic devices equipped with image sensors or camera functions. In such portable electronic devices, the front of the electronic device is often covered with large The user can use the electronic device while looking at the large screen. Images and videos are captured using an image sensor located on the back of the device.

[0004] However, recently, image sensors are not only used on the back of electronic devices, but also on the front of electronic devices. Electronic devices are also being developed that are mounted on the surface. Electronic devices have also been developed in which the screen and the display are arranged on the same plane. The image sensor on the front side captures the image of your face, etc. (See Patent Document 1.) Furthermore, when used as a videophone, the image of the person on the other end of the line can be seen on the screen. While using the camera, you can take a picture of yourself with the image sensor and send it to the person you are talking to. Yes, it is possible.

[0005] On the other hand, when taking a photograph using an image sensor, the illuminance of the subject may be low. In such cases, use a light source such as a flash or strobe to illuminate the subject and This increases the illuminance of the camera, enabling clearer photography (Patent Document 1). 2) Therefore, in addition to the image sensor, portable electronic devices also have a On the other hand, in Patent Document 1, the display unit is It has a display function and a lighting function for the camera's subject, and these functions can be switched An electronic device capable of [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-350208 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-110717 Summary of the Invention [Problem to be solved by the invention]

[0007] In an electronic device in which a camera unit having an image sensor and a display unit are arranged on the same side, The display unit has a display function and a lighting function for the subject of the camera. When switching between the functions, be sure to switch the display to the lighting function before taking a picture. If you do this, you may not be able to see exactly how the image will be captured. On the other hand, if you want to switch the display to the lighting function only at the moment of taking a picture, When the brightness of the ambient light is low, the illumination of the subject is low and only a pitch black subject can be seen. There is.

[0008] Therefore, one aspect of the present invention is to take a picture of your face or the like while looking at a screen in a dark place. One of the purposes is to provide a display device or electronic device that makes it easy to take photographs. Alternatively, one aspect of the present invention is to make it possible to clearly see the face of a person looking at a screen in a dark place. It is an object of the present invention to provide a display device or an electronic device that makes it easy to recognize.

[0009] Another embodiment of the present invention is a display device capable of irradiating a subject with illumination light having high luminance. Another object of the present invention is to provide an electronic device or the like. To provide a display device or electronic device that can be used as a light source for a subject. Another object of the present invention is to provide a display device that can be used for crime prevention. Another object of the present invention is to provide a device, an electronic device, or the like. It is an object of the present invention to provide a display device or electronic device with low power consumption. Another embodiment of the present invention is to provide a novel display device, a novel electronic device, or the like. Another object of one embodiment of the present invention is to provide a novel lighting device or the like. Alternatively, one aspect of the present invention is a novel program or novel software. One of the purposes of this project is to provide software and other related services.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention is a display device having a first region and a second region, wherein the first region is The first area has a function of displaying an image of a subject, and the second area has a function of irradiating light onto the subject. The display device is characterized by having a function of being able to

[0012] Alternatively, one embodiment of the present invention is a display device having a first region and a second region, The first area has a function of displaying an image, and the second area has a function of irradiating illumination light. The display device is characterized by having the function of being able to:

[0013] Another embodiment of the present invention is an electronic device including a display device and an imaging device, The image sensor has a first area and a second area, and the first area is an image of a subject obtained from an imaging device. The first area has a function of displaying an image, and the second area has a function of irradiating light onto the subject. It is an electronic device characterized by having the function of

[0014] Alternatively, in one embodiment of the present invention, in the above structure, the display device and the imaging device are provided on the same surface. The electronic device is characterized by being equipped with a

[0015] Alternatively, one aspect of the present invention is a program having first and second functions, wherein the first function The function of the display device is to display an image of a subject in a first area of ​​the display device. The second function is to display an image for irradiating a subject with light in a second area of ​​the display device. It is a program characterized by having the function of being able to

[0016] Alternatively, one aspect of the present invention is a program having first to third functions, The first function is to obtain an image of a subject using an imaging device, and the second function is to The display device has a function of displaying an image of a subject in a first region, and a function of displaying an image of a subject in a third region. The function of (a) displays an image for irradiating a subject with light in a second area of ​​the display device. It is a program characterized by having the function of being able to [Effects of the Invention]

[0017] According to one aspect of the present invention, when a picture of your face looking at a screen is taken in a dark place, In this case, a display device or the like that makes it easy to take an image can be provided. According to the report, a display device that makes it easier to see your face when looking at the screen in a dark place etc. can be provided.

[0018] According to another aspect of the present invention, a display device is provided that can irradiate a subject with high-luminance illumination light. According to one aspect of the present invention, a display device for a subject can be provided. It is possible to provide a display device or the like that can be used as a light source. According to this, it is possible to provide a display device that can be used for crime prevention purposes. According to one embodiment of the present invention, a display device or the like with low power consumption can be provided. According to one embodiment of the present invention, a novel display device or the like can be provided. According to one aspect of the present invention, a novel lighting device or the like can be provided. According to one aspect of the present invention, a novel program or novel software is provided. can be done.

[0019] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0020] [Figure 1] 1A to 1C illustrate electronic devices. [Figure 2] 1A to 1C illustrate electronic devices. [Figure 3] 1A to 1C illustrate electronic devices. [Figure 4] FIG. [Figure 5] 1A to 1C illustrate electronic devices. [Figure 6] 1A to 1C illustrate electronic devices. [Figure 7] 1A to 1C illustrate electronic devices. [Figure 8] 1A to 1C illustrate electronic devices. [Figure 9] 1A to 1C illustrate electronic devices. [Figure 10] 1A to 1C illustrate electronic devices. [Figure 11] 1A to 1C illustrate electronic devices. [Figure 12]1A to 1C illustrate electronic devices. [Figure 13] 1A to 1C illustrate electronic devices. [Figure 14] 1A to 1C illustrate electronic devices. [Figure 15] 1A to 1C illustrate electronic devices. [Figure 16] 1A to 1C illustrate electronic devices. [Figure 17] 1A to 1C illustrate electronic devices. [Figure 18] 1A to 1C illustrate electronic devices. [Figure 19] 1A to 1C illustrate electronic devices. [Figure 20] 1A to 1C illustrate electronic devices. [Figure 21] 1A to 1C illustrate electronic devices. [Figure 22] FIG. 1 is a diagram illustrating a network configuration. [Figure 23] 1A to 1C illustrate electronic devices. [Figure 24] 1A and 1B are diagrams illustrating a display device. [Figure 25] FIG. 2 is a diagram illustrating a display module. [Figure 26] 1 shows an example of the configuration of a light-emitting device. [Figure 27] 1 shows an example of the configuration of a light-emitting device. [Figure 28] 1 shows an example of the configuration of a light-emitting device. [Figure 29] Cross-sectional TEM image and local Fourier transform image of an oxide semiconductor. [Figure 30] 1A and 1B are diagrams showing nanobeam electron diffraction patterns of an oxide semiconductor film and an example of a transmission electron diffraction measurement apparatus; [Figure 31] An example of structural analysis using transmission electron diffraction measurements, and a planar TEM image. DETAILED DESCRIPTION OF THE INVENTION

[0021] (Embodiment 1) In this embodiment, a method for driving an electronic device according to one embodiment of the present invention will be described.

[0022] As shown in FIG. 1A, the first surface (for example, the front surface) of the electronic device 101 has, for example, A display device 102 and a camera unit 103 are provided.

[0023] The display device 102 has a function of being able to display various images. The display device 102 has a function of irradiating light to the outside and outputting the light. It can also be called a display unit or a display panel.

[0024] The camera unit 103 includes, for example, a lens and an imaging element such as an image sensor. It has the function to capture images such as moving images and still images. The camera unit can also be called an imaging device.

[0025] First, we will discuss the first mode. This is the mode that is suitable for normal work. Therefore, the first mode may be referred to as a first operating mode, a normal mode, or a normal operating mode. In this mode, the display device 102 is used to display images and text. You can view text, photos, etc., display images, text, photos, etc., and enter text. The input can be made, for example, by using a button, a switch, or The input is made through at least one of a sensor or the like. Alternatively, the input is made through, for example, a display device. 102 and the touch sensor, keyboard, mouse, or various sensors provided thereon. Therefore, the display device 102 can be used as an input device. Alternatively, the input may be input to the electronic device 101 by wire or wirelessly. , connected keyboard, mouse, pointing pad, buttons, or pen Alternatively, the input is performed through at least one sensor provided in the electronic device 101. (Proximity, direction, magnetic field, linear acceleration, brightness, gyro, gravity, acceleration, pressure, temperature, image , infrared, ultraviolet, etc.).

[0026] Next, the second mode will be described. For example, the front surface of the electronic device 101 This corresponds to the case where a photograph is taken using the camera unit 103 provided in the second The mode can be the second operating mode, the photography mode, the photography operating mode, the lighting mode, or the lighting This mode can also be called the operational mode. In this mode, the display device 102 displays at least the The area 104 includes a camera unit 103, for example. The image of the object 105 obtained by the above process is displayed. The area 106 can function as a finder area. In other words, the area 106 is a flash illumination area. In other words, in the second mode, that is, the shooting mode, In this case, the display device 102 has a lighting function such as a flash or strobe and a display function for displaying an image. The camera unit 103 has both the display function and the camera function. This can be realized at the same time as the above two functions. The camera unit 103 is used for taking pictures, preparing to take pictures, and At least one of the following times is when you are checking the image or after you have finished shooting. Sometimes it can be achieved.

[0027] The area 104 and the area 106 may be fixed areas on the display device 102. The size and position may be changed at any time.

[0028] It is preferable that the area 104 and the area 106 are provided on the same display device. By providing the area 104 and the area 106 on the same display device, However, at least one of the size and the position of the One aspect of the embodiment is not limited to this. For example, the region 104 and the region 106 may be different. For example, the first display device may have the region 104. The second display device may be provided with an area 106 .

[0029] Here, as an example, it is desirable that the area 106 be displayed with approximately uniform brightness. When displayed with roughly uniform brightness, the image has the same gradation within the area 106. It can be said that this is equivalent to displaying an image. The color of the subject 105 is preferably white. This allows the subject 105 to be photographed in the appropriate color. It is also desirable that the brightness of the region 106 be as high as possible. In the first mode, the brightness of the area 106 is set to the brightest level. It is desirable that the brightness is the same as that when the tone is displayed. One aspect of the embodiment is not limited to this. The brightness of the area 106 can be freely set by the user. It may be possible to change the setting.

[0030] 1B is a schematic diagram seen from the side. 07A is irradiated toward the object 105. Then, the reflected light 10 7B enters the camera unit 103. The surrounding ambient light is irradiated onto the subject 105, and This may be reflected by the subject 105 and enter the camera unit 103. The image obtained in 03 is displayed in area 104 of display device 102 .

[0031] These controls are realized by at least one of hardware and software. For example, the camera function application may require dedicated software or a dedicated program. These operations are controlled by the program, and the above operations and functions are realized. Or, in an application with a certain function, some software functions may These operations are controlled to realize the above-mentioned operations and functions.

[0032] With this configuration, even if the surrounding ambient light is dark, the subject 105 Since illumination light 107A emitted from area 106 is irradiated, subject 105 can be kept bright. Then, the camera unit 103 receives the reflected light 107B and obtains a clear image. Furthermore, in the area 104 of the display device 102, an image obtained from the camera unit 103 is displayed. It displays the image you are taking, so you can check in real time what kind of image is being taken. Therefore, the subject 105 can see how he is being photographed while photographing himself. You can check whether

[0033] After this, still images and moving images are actually taken, and the image data obtained is stored in a storage device. After shooting is complete, return to normal mode and display the The stored image data can be checked using the display device 102. Since the shadow has been eliminated, the area 106 that functions as a light source does not necessarily need to be provided. In this case, the entire display device 102 can be used to check the image.

[0034] As an example, Figure 2 shows the case where an email is being operated in normal mode.

[0035] Next, FIG. 3 shows an example of a screen of the display device 102 when the electronic device 101 is started up. The display device 102 displays at least one of letters, numbers, and icons. In both the area 104 and the area 106, small characters such as letters, numbers, or icons are displayed. That is, the area 104 and the area 106 are each an operation. Depending on the mode, it displays at least one of letters, numbers, icons, or images. It has the function to do so.

[0036] When the camera unit 103 is used to take a moving image, the display device is turned on during the taking of the image. The device 102 is provided with at least an area 104 and an area 106, and in the area 106, The illumination light 107A continues to illuminate the subject 105, and the area 104 displays the shooting situation. This ensures that even moving images can be captured with a properly illuminated subject. 105 can be photographed within the appropriate shooting range.

[0037] Next, an example of a flowchart for taking a photograph using the camera unit 103 is shown in FIG. That is, an example of a flowchart for performing photography in the second mode is shown.

[0038] In step 130, the camera function is first activated. For example, As shown in FIG. 3, the camera software (application) displayed on the display device 102 Double-click or touch the application icon 115A. Alternatively, a button or switch provided on the electronic device 101 may be pressed to start the device. As for software, there are not only software specifically for the camera, but also software that can be used with the camera as part of its functions. For example, when used as part of a function, Examples include mobile phones and SNS (social networking services). .

[0039] Next, in step 131, the display device 102 is provided with an area 104 and an area 106. In this case, the display device 102 may further include another area. Even if there is another display area in the area 104 or the area 106, Other displays that are made here include a graph showing the image quality, the time, and the battery status. At least one of the charging status and the radio wave conduction status can be mentioned.

[0040] Next, in step 132, the object 105 is illuminated from the area 106 on the display device 102. Bright light 107A is irradiated. At this time, the intensity and color of the illumination light 107A may be changed. At this time, ambient light may be irradiated onto the subject 105 .

[0041] Next, in step 133, the reflected light 107B from the subject 105 is incident on the camera unit 103. Of course, the camera unit 103 receives light other than the reflected light 107B, for example, light coming from surrounding objects. This causes the camera unit 103 to perform photoelectric conversion processing.

[0042] It should be noted that steps 132 and 133 may be considered to be performed almost simultaneously. be.

[0043] Next, in step 134, the area 104 on the display device 102 is displayed from the camera unit 103. The image of the subject 105 obtained is displayed. This image is used as an image for the viewfinder function. This is to check what kind of shooting will be done. In other words, the image of the subject 105 obtained from the camera unit 103 is rewritten as The moving image is continuously displayed as a moving image in the area 104 on the display device 102.

[0044] Next, in step 135, the state of the subject 105 is confirmed using the area 104. That is, the user checks the image displayed in the area 104 and confirms whether it is OK to take a picture. At this time, the intensity and color of the illumination light 107A may be changed depending on the situation in the area 104. For example, if the illumination of the subject 105 is weak, the intensity of the illumination light 107A may be increased. Or, if the magnification of the photograph is not appropriate, the zoom function of the camera unit 103 may be used. The image may be enlarged or reduced to change the photographing area to an appropriate range.

[0045] Next, in step 136, the camera unit 103 takes a photograph. Alternatively, the image may be captured by pressing the capture button displayed on the electronic device 10. Shooting may be performed by pressing a button or switch on the camera. Press the shooting button on the device connected to the network, such as a At this time, a still image or a moving image may be captured. Alternatively, multiple still images may be taken in succession.

[0046] Next, in step 137, the photographed data is stored in a storage device. The device may be a storage device provided in the electronic device 101, or a device provided in a telecommunications The storage device may be connected via a network such as a telecommunications network. The network may be a wired network or a wireless network. The storage device may be a volatile storage device such as a DRAM. Non-volatile storage devices such as memory, hard disk, DVD, optical disk, or ROM Alternatively, the storage device may be a semiconductor memory, a magnetic memory, a magneto-optical memory, or Alternatively, it may have an organic memory, etc.

[0047] In this way, after the shooting work is completed, you can return to the first mode, that is, normal work, and take pictures. The recorded data can be viewed and displayed using the display device 102. do.

[0048] Note that this order of steps is an example, and some of the steps may be reversed or multiple steps may be used. When steps are performed simultaneously or one step is divided into multiple steps There are also.

[0049] By operating in this manner, the display device 102 has both a display function and an illumination function. It should be noted that both functions can be performed simultaneously when the camera However, one aspect of the embodiment of the present invention is However, the present invention is not limited to this. Even when the camera unit 103 is not in operation, the display device 102 may display the following: Region 104 and region 106 may be provided.

[0050] Here, the area 104 having the viewfinder function and the area 106 having the lighting function are First, in FIG. 1A, as an example, the side closer to the camera unit 103 is An area 104 is provided on the side farther from the camera unit 103. An area 106 is provided on the side farther from the camera unit 103. In this way, when the area 104 is arranged on the side closer to the camera unit 103, If the subject 105 is a human, it is easy to make eye contact with the subject 105. If the camera 105 looks at the area 104 and checks the situation, the line of sight is close to the camera unit 103. Therefore, if you take a photo without taking a picture, the subject's line of sight will be As a result, the image you take will be more accurate and will look like you are looking at the camera. This makes it easier to take still images and videos.

[0051] In addition, since the area 106 is far from the camera unit 103, the illumination light emitted from the area 106 As a result, the contrast of the captured image is can be improved.

[0052] However, one aspect of the embodiment of the present invention is not limited to this. For example, as shown in FIG. Alternatively, the area 106 may be provided on the side closer to the camera unit 103. By providing the light source 107A on the side closer to the object 105, it becomes easier to irradiate the object 105 with the illumination light 107A perpendicularly. As a result, shadows are less likely to appear on the subject 105, making it easier to take a clear image. become.

[0053] In addition, in FIG. 1(A) and FIG. 5, one area 104 and one area 106 are provided. However, one aspect of the embodiment of the present invention is not limited to this case. For example, as shown in FIG. 6, the illumination area may be divided into areas 10 In this way, the illumination area can be divided into two areas, area 106A and area 106B. By positioning the object 105, illumination light can be directed onto the object 105 from different areas, i.e., from different angles. This makes it difficult for shadows to form on the subject 105, making it easier to capture clear images. .

[0054] In addition, in FIG. 1(A), FIG. 5, and FIG. 6, the area 104 and the area 106 are arranged side by side in the vertical direction. However, one aspect of the embodiment of the present invention is not limited to this. Alternatively, as shown in FIG. 7(A), the region 104 may be included in the region 106. It is also possible to arrange it in such a way that

[0055] At least one of the size, area, shape, position, color, and brightness of the region 106 The intensity of the light emitted from the area 106 may also be changed depending on the situation. Similarly, the size, area, shape, position, color, or At least one of the brightness and other parameters may be changed depending on the situation. For example, in FIG. An example of the case where the size of the area 104 is changed to a smaller size is shown in FIG. The area can be changed by touching the screen with a finger or the like and dragging the outer frame of the area 104. It can be executed.

[0056] Alternatively, a dedicated user interface may be provided to control the screen. ) shows an example in which the slider 108A is arranged. The button 108AA is moved left and right. By using the slider 108A, you can change the value. An example of the case where the size of the area 106 is changed to a smaller size is shown in FIG. By moving the button 108AA to the left, the area 106 is made smaller.

[0057] In FIG. 8B, the size of the area 106 is changed by the slider 108A. However, the size of another may be changed. For example, the slider 108A changes the size of the area The brightness of the area 106 may be changed, or the image in the area 106 may be changed.

[0058] Alternatively, the color of the region 106 may be changed by a slider. Use the sliders 108B, 108C for green, and 108D for red to adjust the area. An example of changing the color of the area 106 is shown below. , and the color of the area 106 can be changed by moving the red button 108DA left or right. It is possible to do this.

[0059] Alternatively, for example, an example of changing the position of the area 104 on the screen is shown in FIGS. 10 and 11. As shown in Figure 10(A) and Figure 11(A), first, a contact object 111 such as a finger or a pen is Then, as shown in FIG. 10(B) and FIG. 11(B), the area 104 is touched. Drag the area 104 to the left or down until you reach the desired location. After dragging, the contact object 111 is removed from the screen as shown in FIG. 10(C) and FIG. 11(C). By this operation, the position of the area 104 on the screen can be changed. If you want to change the position of the area 106, you can move it in the same way. Examples are shown in Figs. 12(A), 12(B), 12(C), 13(A), 13(B), and 1 3(C).

[0060] When the electronic device 101 or the display device 102 is rotated, the area 1 For example, you can change the layout of the area 106 by turning the area 104 clockwise. An example of the case where the image is rotated in the direction of the arrow (across) is shown in FIG. 14(A). On the other hand, if we rotate Figure 1(A) counterclockwise, , as shown in FIG. 14(B). In both FIG. 14(A) and FIG. 14(B), the area 104 is This makes it easier to focus the viewfinder on the camera unit 103. However, one aspect of the embodiment of the present invention is not limited to this.

[0061] Even when taking a photograph using the camera unit 103, if the ambient light is strong and bright, In this case, the display device 102 does not necessarily have to be used as lighting. 5(A), a region 106 may be provided. Alternatively, as shown in FIG. 15(B), As shown in the figure, the area 106 may not be provided, or the brightness of the area 106 may be set to zero. Alternatively, the area 106 may be made to have the same brightness as the area 104. That is, even when taking a photograph using the camera unit 103, in some cases, In this case, the display device 102 may not function as a light source depending on the situation. In this case, as shown in FIG. 15(C), the entire screen of the display device 102 is used as the area 104. You may do so.

[0062] Or, when the display device 102 is used as a light source, the brightness is not sufficient. In such a case, a dedicated lighting member 113 is provided separately from the display device 102. An example in which an illumination member 113 is provided near the camera unit 103 is shown in FIG. It is to be noted that a plurality of lighting members 113 may be provided. The lighting member 113 is configured using, for example, an LED.

[0063] When taking a photograph using the camera unit 103, the display device 102 displays the area 1 Not only 04 and area 106, but also various icons, various images, or various characters At least one of the areas 104 and 106 can be displayed. It is also possible to display it in the area next to the area 104 or the area 106. It is also possible to show

[0064] For example, an example in which various icons are arranged inside the area 106 is shown in FIG. Icon 112A indicates a shooting execution button. In a normal camera, This corresponds to the - button. Pressing this button will take a picture. Icon 11 2B shows the flash control button. It controls whether to execute the flash. By setting the flash control to automatic, the lighting of the subject 105 can be adjusted. You can also set the flash to only activate when the light is low. indicates the shooting mode button. You can select whether the image you want to shoot is a still image or a video. Icon 112D shows the properties button. You can control whether to display a window for making detailed settings.

[0065] As another example, FIG. 18 shows an example in which characters are displayed inside the area 106.

[0066] If various icons are arranged inside the area 106, the area is highlighted. In some cases, it may be determined that the lighting is not bright enough. In the area where the display device 102 is located, the display device 102 may be burned or deteriorated due to strong illumination light. Or, in normal mode, When various icons are placed, the area where the icons are placed may be affected by lighting. In the display mode, the display device 102 may not emit light. In the case of a display device, it is possible to reduce burn-in of the screen. If you want to prevent a certain area from being illuminated, you can do so by adding an icon or other The area where the icon is displayed will not be illuminated strongly, but the area other than the icon will be illuminated strongly. Alternatively, in the illumination mode, the icon The area around the icons will not be illuminated strongly, but will be illuminated in the area around the icons. The excluded area may emit strong light to achieve a lighting function.

[0067] Further, another area may be provided outside the area 104 and the area 106. As an example, an example in which an area 109 is provided is shown in FIG. In the example shown, an image of the other party 110 is displayed in the area 109. The area 109 is located near the camera unit 103. When the person talks while looking at the image of 110, the camera unit 103 takes a picture of the image where the person's eyes meet. can be done.

[0068] The electronic device 101 can be provided with various switches and buttons. FIG. 16 shows an example in which a button 114 for returning to the home screen is arranged.

[0069] This embodiment describes an example of the basic principle. Part or all of the above may be freely combined with part or all of other embodiments, It can be adapted or substituted.

[0070] (Embodiment 2) In this embodiment, a structure of an electronic device according to one embodiment of the present invention will be described.

[0071] First, an example of a rough internal configuration diagram of electronic device 101 is shown in FIG.

[0072] The CPU 201 can perform various calculations and processes. It controls various parts.

[0073] The storage device 203 stores various data, programs, or application software. For example, the storage device 203 may store at least one of a flash drive, memory, magnetic disk, CD-ROM, DVD, or magneto-optical disk, etc. It is a storage device that can process nonvolatile storage media. The application software (program) having the necessary functions is stored in the storage device 203, may be stored on the storage media used therein.

[0074] The storage device 205 stores various data, programs, or application software. As an example, the storage device 203 may include a DRAM. The data or programs stored in the storage device 205 are volatile storage devices such as Using the RAM, the CPU 201 can execute various processes. The application software (program) having such functions is stored in the storage device 203. It may be stored in.

[0075] The controller 207 can control the display device 209. The device 102 corresponds to a part or the whole of the display device 209. The display device 102 corresponds to the entirety of the display device 209 and the controller 207. The device 209 includes application software having the functions described in the first embodiment. It can display images and user interfaces used in (programs).

[0076] The external port 211 allows communication with the outside. By connecting a storage medium to the external port 211, various types of data can be stored on the removable storage medium. At least one of data and software (programs) can be stored. Alternatively, a removable storage device can be connected to the external port 211. Various data or software (programs, etc.) can be stored on the storage devices and storage media controlled by them. For example, the external port 211 can be Storage devices such as semiconductor memory or magnetic memory, or CDs or DVDs However, the external port 211 can be connected to any storage medium. However, since the power supply is removable, it is not necessarily always connected. The application software (program) with the functions shown in 1 is The data stored in a removable storage medium can be connected to the port 211. It may be preserved.

[0077] The network control unit 213 can control a network such as the Internet. For example, a wired cable is connected to the network control unit 213 to construct a LAN. Alternatively, an antenna 215 is connected to the network control unit 213, and a wireless network is established. This allows data to be exchanged. For example, By connecting to external devices via the network control unit 213, various data can be exchanged. and storing at least one of the data or software (programs) in the electronic device 101. Download at least one of various data or software (programs) into Therefore, the application having the functions shown in the first embodiment can be Download application software (programs) via the network. Or, it may be executed on a connected device via a network, and the results may be transmitted to an electronic device. The image may be displayed on the display device 102 of the child device 101 .

[0078] The camera unit 217 can take images. It can take both still images and videos. It is also possible to control the lens to take pictures by zooming in or out. This corresponds to a part or all of the camera unit 103 and the camera unit 217 shown in FIG. .

[0079] In this way, various components are controlled and operated in the electronic device 101. Application software (program) having the functions shown in embodiment 1 also , and controls the operation of each part of the electronic device 101 .

[0080] Next, FIG. 3 shows an example of a screen of the display device 102 when the electronic device 101 is started up. Various icons are displayed on the screen. Each icon represents a different function. For example, icon 115A is compatible with application software that realizes This is the camera software and can run the camera program. The software (program) can realize the functions shown in the first embodiment. Therefore, this software (program) is a program for controlling the camera unit 103, the display device 102, the camera The camera unit 217 or the display device 209 can be controlled.

[0081] Also, icon 115B is the phone software and can execute phone programs. For example, it is possible to make a video call. Therefore, this software (program) can realize the functions shown in 1. RAM) is a camera unit 103, a display device 102, a camera unit 217, a display device 209, or , network control unit 213, and the like.

[0082] In addition to these, various other icons are displayed. For example, SNS (social networking service), email, or WEB In the B service, etc., the functions shown in the first embodiment can be used.

[0083] Such software (program) is stored in the storage device 203 or the storage device 205. Or, such software (programs) are stored in Such software (programs) are stored on a storage medium or are transmitted to an external port. Removable storage media and storage devices that can be exchanged via the port 211 For example, removable storage devices include memory cards or Examples include USB memory sticks.

[0084] In addition, such software (program) is transmitted via the network control unit 213, etc. The downloaded data can be stored in the electronic device 101. A schematic diagram of this case is shown in FIG. The electronic device 101 is connected to a network 116 by wire or wirelessly. The network 116 includes a server 117 that can provide the software. The electronic device 101 can access the server 117 to Obtaining, downloading, or purchasing desired software (programs) It should be noted that the electronic device 101 can be connected to the network 116. Instead, another computer 118 is connected to the network 116. The computer 118 may access the server 117 to To acquire, download, or purchase the desired software (program) And, from the computer 118, the electronic device 1 01, by transmitting the software (program) via a portable storage medium, etc. You can transfer it.

[0085] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0086] (Embodiment 3) In this embodiment, another structure of the electronic device of one embodiment of the present invention will be described.

[0087] As shown in FIG. 23(A), the electronic device 101A includes, for example, a display device 102A and a display device The area 106 has, for example, two areas, area 106A and area 106B. The display device 102A and the display device 102B are provided with do.

[0088] In FIG. 23A, the display device 102A and the display device 102B are provided with the area 106A and the area 106B. However, one embodiment of the present invention is not limited to this. For example, the area 106 is provided on only one of the display devices 102A and 102B. It may also be used.

[0089] Here, a side view of the electronic device 101A is shown in FIG. 23(B). In this case, it can be folded at the center. and illumination light 107C emitted from area 106B of display device 102B. Here, by bending the electronic device 101A at the center, the illumination light 10 The direction of illumination light 107C and illumination light 107D is different. This makes it easier to take beautiful images.

[0090] This embodiment describes an example of the basic principle. Part or all of the above may be freely combined with part or all of other embodiments, It can be adapted or substituted.

[0091] (Fourth embodiment) In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0092] [Configuration example] FIG. 24A is a top view of a display device according to one embodiment of the present invention, and FIG. 24B is a top view of a display device according to one embodiment of the present invention. A pixel circuit that can be used when a liquid crystal element is applied to a pixel of a display device according to one embodiment of the present invention is described. 24C is a circuit diagram for explaining a pixel of a display device according to one embodiment of the present invention. FIG. 1 is a circuit diagram illustrating a pixel circuit that can be used when an organic EL element is applied. do.

[0093] The transistors arranged in the pixel portion can be formed by various methods, for example, as described in other embodiments. The transistor can be formed by a method such as the above. Since it is easy to configure the driver circuit using n-channel transistors, Part of the driving circuit is formed on the same substrate as the transistors in the pixel section. By using the transistor described in another embodiment in an operating circuit, a highly reliable display device can be obtained. can be provided.

[0094] An example of a top view of an active matrix display device is shown in FIG. On the plate 400, a pixel section 401, a first scanning line driving circuit 402, a second scanning line driving circuit 403, and a 403 and a signal line driver circuit 404. In the pixel portion 401, a plurality of signal lines are connected to the signal line driver circuit 404. A plurality of scanning lines are arranged extending from the first scanning line driving circuit 402 and the second scanning line driving circuit 403. The scanning line driving circuit 403 is arranged to extend from the scanning line driving circuit 403. In each of the display devices, pixels each having a display element are arranged in a matrix. The substrate 400 is a connection part such as an FPC (Flexible Printed Circuit). It is connected to a timing control circuit (also called a controller or control IC) via

[0095] In FIG. 24A, a first scanning line driver circuit 402, a second scanning line driver circuit 403, a signal The line driver circuit 404 is formed on the same substrate 400 as the pixel portion 401. The number of components such as drive circuits to be provided is reduced, which contributes to cost reduction. 400 If an external drive circuit is provided, the wiring must be extended, increasing the number of connections between the wiring. When a driving circuit is provided on the same substrate 400, the number of connections between the wirings can be reduced. This can improve reliability or yield.

[0096] [Liquid crystal display device] An example of the circuit configuration of a pixel is shown in FIG. 24(B). 1 shows a pixel circuit that can be applied to the pixel.

[0097] This pixel circuit can be applied to a configuration in which one pixel has multiple pixel electrode layers. The pixel electrode layer is connected to different transistors, and each transistor is driven by a different gate signal. This allows individual pixels of the multi-domain designed pixel to be moved. The signals applied to the electrode layers can be controlled independently.

[0098] The gate wiring 412 of the transistor 416 and the gate wiring 413 of the transistor 417 are separated so that different gate signals can be applied. The source electrode layer or drain electrode layer 414 functioning as a transistor 416 is Transistors 416 and 417 are commonly used in other implementations. The transistors described in the above embodiments can be used as appropriate. It is possible to provide a liquid crystal display device.

[0099] A first pixel electrode layer electrically connected to the transistor 416 and a second pixel electrode layer electrically connected to the transistor 417 are The shape of the second pixel electrode layer that is electrically connected to the first pixel electrode layer will be described. The shape of the pixel electrode layer is separated by slits. The first pixel electrode layer spreads in a V-shape. The second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer.

[0100] The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 412. The gate electrode of the gate electrode 412 is connected to the gate wiring 413. 3, different gate signals are applied to transistors 416 and 417. By varying the voltage, the orientation of the liquid crystal can be controlled.

[0101] In addition, the capacitor wiring 410, the gate insulating film functioning as a dielectric, and the first pixel electrode layer Alternatively, a storage capacitor may be formed by a capacitor electrode electrically connected to the second pixel electrode layer.

[0102] The multi-domain structure has a first liquid crystal element 418 and a second liquid crystal element 419 in one pixel. The first liquid crystal element 418 is composed of a first pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween. The second liquid crystal element 419 is composed of a second pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween. can be.

[0103] It should be noted that the pixel circuit shown in FIG. 24(B) is not limited to this. For example, The pixel shown may be newly equipped with a switch, a resistor, a capacitor, a transistor, a sensor, or a logic circuit. etc. may be added.

[0104] [Organic EL display device] Another example of the circuit configuration of a pixel is shown in FIG. 24(C). 1 shows the pixel structure of the display device.

[0105] In an organic EL element, when a voltage is applied to the light-emitting element, electrons are emitted from one of the pair of electrodes. and holes are injected from the other side into the layer containing the light-emitting organic compound, causing a current to flow. The electrons and holes recombine to form an excited state in the light-emitting organic compound, When the excited state returns to the ground state, light is emitted. The optical element is called a current-excited light-emitting element.

[0106] FIG. 24(C) is a diagram showing an example of an applicable pixel circuit. An example in which two transistors are used in one pixel is shown. can be used for the channel formation region of an n-channel transistor. The pixel circuit can be applied with digital time gray scale driving.

[0107] Regarding the configuration of applicable pixel circuits and pixel operation when digital time gray scale driving is applied, and explain.

[0108] The pixel 420 includes a switching transistor 421, a driving transistor 422, and a light emitting element. The switching transistor 421 has a gate element 424 and a capacitor element 423. The source electrode layer is connected to the scanning line 426, and the first electrode (one of the source electrode layer and the drain electrode layer) is connected to the scanning line 426. The first electrode (the other of the source electrode layer and the drain electrode layer) is connected to the signal line 425, and the second electrode (the other of the source electrode layer and the drain electrode layer) is connected to the It is connected to the gate electrode layer of the driving transistor 422. The gate electrode layer is connected to a power supply line 427 through a capacitor element 423, and the first electrode is connected to the power supply line 427, and the second electrode is connected to the first electrode (pixel electrode) of the light-emitting element 424. The second electrode of the light emitting element 424 corresponds to a common electrode 428. The common electrode 428 is formed on the same substrate. It is electrically connected to the common potential line formed thereon.

[0109] The switching transistor 421 and the driving transistor 422 are the same as those in other embodiments. This allows for the development of highly reliable organic EL devices. A display device can be provided.

[0110] The potential of the second electrode (common electrode 428) of the light-emitting element 424 is set to a low power supply potential. The low power supply potential is determined based on the high power supply potential supplied to the power supply line 427, and the low power supply potential is lower than the high power supply potential. The potential is the voltage that satisfies the voltage level. For example, GND or 0V is set as the low power supply voltage. The high power supply potential and the low power supply potential are set to be equal to or higher than the forward threshold voltage of the light emitting element 424. By applying the potential difference to the light emitting element 424, a current flows through the light emitting element 424. The forward voltage of the light emitting element 424 is the voltage required to achieve a desired brightness. The term refers to a voltage that includes at least the forward threshold voltage.

[0111] The capacitor 423 is substituted for the gate capacitance of the driving transistor 422. The gate capacitance of the driving transistor 422 can be omitted. A capacitance may be formed between the gate electrode layer and the insulating layer.

[0112] Next, a description will be given of the signal input to the driving transistor 422. Voltage input voltage driving In this method, the driving transistor 422 is in two states: fully on and fully off. A video signal that becomes a video signal is input to the driving transistor 422. In order to operate the motor 422 in the linear region, a voltage higher than the voltage of the power supply line 427 is applied to the drive A signal line 425 is connected to the gate electrode layer of the transistor 422. A voltage equal to or greater than the threshold voltage Vth of the driving transistor 422 is applied.

[0113] When analog gradation driving is performed, the gate electrode layer of the driving transistor 422 is connected to the light emitting element 4 24 plus the threshold voltage Vth of the driving transistor 422. In addition, a video signal is input so that the driving transistor 422 operates in the saturation region. This causes a current to flow through the light emitting element 424. In addition, the driving transistor 422 is operated in a saturation region. In order to achieve this, the potential of the power supply line 427 is set higher than the gate potential of the driving transistor 422. By converting the video signal into an analog signal, a current corresponding to the video signal is passed through the light emitting element 424. Furthermore, analog gradation driving can be performed.

[0114] The configuration of the pixel circuit is not limited to the pixel configuration shown in FIG. 4(C) in the pixel circuit, a switch, a resistor, a capacitor, a sensor, a transistor or a logic element. A logic circuit or the like may be added.

[0115] When the transistors exemplified in other embodiments are applied to the circuit exemplified in FIG. The source electrode (first electrode) is on the low potential side, and the drain electrode (second electrode) is on the high potential side. Furthermore, the potential of the first gate electrode is controlled by a control circuit or the like. The second gate electrode is supplied with a potential lower than that applied to the source electrode by a wiring (not shown). Any of the above-mentioned potentials may be input.

[0116] For example, in this specification, a display element, a display device which is a device having a display element, a light-emitting device, A light-emitting device, which is a device having an element and a light-emitting element, can be used in various forms or in various It is possible to have such elements.

[0117] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0118] (Embodiment 5) In this embodiment, a display module to which the semiconductor device of one embodiment of the present invention is applied will be described. The explanation will be given with reference to FIG.

[0119] The display module 8000 shown in FIG. 25 includes an upper cover 8001 and a lower cover 8002. Between them, touch panel 8004 connected to FPC8003 and A display panel 8006, a backlight unit 8007, a frame 8009, a printed circuit board The backlight unit 8007, the battery 8011, and the The telly 8011, the touch panel 8004, etc. may not be provided.

[0120] The semiconductor device of one embodiment of the present invention can be used for the display panel 8006, for example.

[0121] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as needed to fit the size of the 8006.

[0122] The touch panel 8004 is a resistive or capacitive touch panel. The display panel 8006 can be used by overlapping it with the opposing substrate (sealing substrate). It is also possible to provide a touch panel function to the display panel. It is also possible to provide an optical sensor in each pixel of the 8006 to create an optical touch panel. Alternatively, a touch sensor electrode is provided in each pixel of the display panel 8006, and a capacitive touch sensor is provided. It may also be a panel.

[0123] The backlight unit 8007 includes a light source 8008. It may be provided at the end of the light source unit 8007 and may be configured to use a light diffusion plate.

[0124] The frame 8009 has a function of protecting the display panel 8006 and also a function of preventing the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 8009 may also function as a heat sink.

[0125] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. 1 can be omitted if commercial power is used.

[0126] The display module 8000 also includes components such as a polarizing plate, a retardation plate, and a prism sheet. Additional ones may be provided.

[0127] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0128] (Sixth embodiment) In this embodiment, a touch panel that can be applied to an electronic device of one embodiment of the present invention will be described. The structure will be described with reference to FIG. 26. This touch panel is foldable. The configuration may be as follows.

[0129] FIG. 26A illustrates a structure of a touch panel that can be used for an electronic device of one embodiment of the present invention. This is a front view.

[0130] FIG. 26(B) is a cross-sectional view taken along the cutting lines AB and CD in FIG. 26(A). .

[0131] FIG. 26(C) is a cross-sectional view taken along the cutting line EF in FIG. 26(A).

[0132] <Explanation of top view> The touch panel 300 exemplified in this embodiment includes a display portion 301 (see FIG. 26A). see).

[0133] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. This allows the detection of a finger or the like touching the display unit 301. A touch sensor can be configured using the above.

[0134] The pixel 302 includes a plurality of sub-pixels (for example, the sub-pixel 302R), each of which includes a light-emitting element and a and a pixel circuit capable of supplying power to drive the light-emitting element.

[0135] The pixel circuit has wiring that can supply a selection signal and wiring that can supply an image signal. The wiring is electrically connected to the wiring.

[0136] The touch panel 300 also includes a scan line driver that can supply a selection signal to the pixel 302. circuit 303g(1), and an image signal line driving circuit capable of supplying an image signal to the pixel 302. It has a path 303s(1).

[0137] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0138] The imaging pixel circuit is provided with wiring that can supply a control signal and a power supply potential. It can be electrically connected with wiring.

[0139] The control signal is used to select an imaging pixel circuit that reads out the recorded imaging signal, for example. a signal that can initialize the imaging pixel circuit; and a signal that can initialize the imaging pixel circuit. Examples include a signal that can determine the time to be detected.

[0140] The touch panel 300 includes an imaging pixel driver that can provide control signals to the imaging pixels 308. and an image pickup signal line drive circuit 303s(2) that reads out the image pickup signal. .

[0141] <Explanation of the cross-sectional view> The touch panel 300 includes a substrate 310 and an opposing substrate 370 that faces the substrate 310. (See FIG. 26(B)).

[0142] The substrate 310 includes a flexible substrate 310b and a barrier layer 310c that prevents impurities from diffusing into the light-emitting element. The film 310a and the adhesive layer 310c that bonds the substrate 310b and the barrier film 310a are laminated. It is a laminate obtained by

[0143] The opposing substrate 370 is made up of a flexible substrate 370b and a barrier layer 370c that prevents impurities from diffusing into the light emitting element. The rear film 370a and the adhesive layer 370c that bonds the substrate 370b and the barrier film 370a It is a laminated body (see FIG. 26(B)).

[0144] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. The layer has a refractive index higher than that of air and also serves as an optical bonding layer. The first light emitting element 350 R is located between the substrate 310 and the opposing substrate 370 .

[0145] 《Pixel configuration》 The pixel 302 includes a subpixel 302R, a subpixel 302G, and a subpixel 302B (see FIG. 2). 6(C)). The subpixel 302R includes a light-emitting module 380R. G includes a light-emitting module 380G, and subpixel 302B includes a light-emitting module 380B. .

[0146] For example, the subpixel 302R supplies electricity to the first light-emitting element 350R and the second light-emitting element 350R. The pixel circuit includes a transistor 302t that can supply power (FIG. 26(B)). The light emitting module 380R includes a first light emitting element 350R and an optical element (for example, For example, a colored layer 367R is provided.

[0147] The first light emitting element 350R includes a lower electrode 351R, an upper electrode 352, and a lower electrode 351R. A layer 353 containing a light-emitting organic compound is provided between the upper electrodes 352 (see FIG. 26(C)). .

[0148] The layer 353 containing a light-emitting organic compound includes a light-emitting unit 353a, a light-emitting unit 353b, and a light-emitting element 353c. An intermediate layer 354 is provided between the light-emitting unit 353a and the light-emitting unit 353b.

[0149] The light emitting module 380R has a first colored layer 367R on the counter substrate 370. The light emitting element may transmit light having a specific wavelength, such as red, green, or blue. Alternatively, a material that selectively transmits light emitted by a light-emitting element can be used. A transparent region may be provided.

[0150] For example, the light emitting module 380R includes a first light emitting element 350R and a first color layer 367R. The sealing material 360 is in contact with the substrate.

[0151] The first colored layer 367R is located so as to overlap the first light emitting element 350R. A part of the light emitted by the first light emitting element 350R is reflected by the sealing material 360, which also serves as an optical bonding layer, and the first The light passes through the colored layer 367R and reaches the outside of the light emitting module 380R as shown by the arrow in the figure. It is ejected.

[0152] Although an example in which a light-emitting element is used as a display element has been shown here, The embodiment is not limited to this.

[0153] For example, in this specification, a display element, a display device which is a device having a display element, a light-emitting device, A light-emitting device, which is a device having an element and a light-emitting element, can be used in various forms or in various Examples of a display element, a display device, a light-emitting element, or a light-emitting device include is an EL (electroluminescence) element (EL element including organic and inorganic materials, organic EL EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc. etc.), transistors (transistors that emit light according to the current), electron-emitting elements, liquid crystal elements, Electronic ink, electrophoretic element, grating light valve (GLV), plasma display ray (PDP), MEMS (Micro-Electro-Mechanical Systems) based display Display element, Digital Micromirror Device (DMD), DMS (Digital Micromirror Scatter), MIRASOL (registered trademark), IMOD (Interference Module shutter-type MEMS display element, optical interference-type MEMS display element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays whose contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic effects, such as An example of a display device using an EL element is an EL display. An example of a display device using electron-emitting devices is a field emission device. Flat panel display (FED) or SED type flat panel display (SED: Surface-c Induction Electron-emitter Display An example of a display device using a liquid crystal element is a liquid crystal display (transmissive liquid crystal display). Transflective LCD displays, reflective LCD displays, direct-view LCD displays, projection LCD displays A type of display device that uses electronic ink or electrophoretic elements. Examples include electronic paper. When realizing a display, part or all of the pixel electrodes function as reflective electrodes. For example, a part or the whole of the pixel electrode may be made of aluminum. In this case, the reflective electrode may have a metal such as SRAM. This allows further reduction in power consumption. can be done.

[0154] <Touch panel configuration> The touch panel 300 has a light-shielding layer 367BM on the opposing substrate 370. M is provided so as to surround a colored layer (for example, the first colored layer 367R).

[0155] The touch panel 300 includes an anti-reflection layer 367p at a position overlapping the display unit 301. The antireflection layer 367p may be, for example, a circular polarizer.

[0156] The touch panel 300 includes an insulating film 321. The insulating film 321 is formed on the transistor 302t. The insulating film 321 serves as a layer for flattening unevenness caused by the pixel circuit. In addition, the diffusion of impurities into the transistor 302t and the like can be suppressed. The insulating film 321 can be formed by stacking layers that can achieve this.

[0157] The touch panel 300 has a light emitting element (for example, a first light emitting element 350R) disposed on an insulating film 321. has.

[0158] The touch panel 300 has a partition wall 328 that overlaps the end of the lower electrode 351R on the insulating film 321. (See FIG. 26(C)). A spacer 329 is provided on the septum 328 .

[0159] <Configuration of Image Signal Line Driving Circuit> The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c. The driver circuit can be formed on the same substrate as the pixel circuit in the same process. As shown in FIG. 6(B), the transistor 303t has a second gate on the insulating film 321. The second gate may be electrically connected to the gate of the transistor 303t. Alternatively, different potentials may be applied to these. may be provided in the transistor 308t, the transistor 302t, etc.

[0160] <Imaging pixel configuration> The imaging pixel 308 detects the photoelectric conversion element 308p and the light irradiated onto the photoelectric conversion element 308p. The imaging pixel circuit includes a transistor 308t Includes:

[0161] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0162] Other Configurations The touch panel 300 includes wiring 311 through which signals can be supplied, and terminals 319 The wiring 311 is provided to supply signals such as image signals and synchronization signals. The FPC 309(1) is electrically connected to the terminal 319.

[0163] A printed wiring board (PWB) may be attached to the FPC309(1). stomach.

[0164] The transistors formed in the same process are referred to as transistor 302t and transistor 303. t, and transistor 308t.

[0165] The transistor structure may be a bottom gate type, a top gate type, or the like. A transistor can be applied.

[0166] In addition to the gate, source, and drain of the transistor, various wiring that makes up the touch panel Materials that can be used for the wires and electrodes include aluminum, titanium, chromium, and nickel. copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten The metal is used as a single layer or a laminated structure. For example, a single layer structure of aluminum film containing silicon, an aluminum film on a titanium film, Two-layer structure with aluminum film laminated on tungsten film, two-layer structure with copper-magnet Two-layer structure with copper film laminated on top of a titanium film. a two-layer structure in which a copper film is laminated on a tungsten film; a two-layer structure in which a titanium film or titanium nitride film is laminated on a tungsten film; Then, an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and A three-layer structure in which a titanium film or titanium nitride film is formed on top of the above, a molybdenum film or a nitride film A molybdenum film and an aluminum film or a molybdenum nitride film are laminated on the molybdenum film or the molybdenum nitride film. A three-layer structure in which a copper film is laminated on top of a molybdenum film or molybdenum nitride film is formed on top of that. The transparent conductive material containing indium oxide, tin oxide or zinc oxide is used. Furthermore, when copper containing manganese is used, the controllability of the shape by etching is improved. Therefore, it is preferable.

[0167] Transistors such as transistor 302t, transistor 303t, and transistor 308t As an example, it is preferable to use silicon as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as the silicon, silicon having crystallinity is particularly preferred. It is preferable to use, for example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon is formed at a lower temperature than single-crystalline silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Even when the pixels are extremely fine, the gate drive circuit and the source drive circuit are This allows the components to be formed on the same substrate as the electronic device, reducing the number of components that make up the electronic device. can be done.

[0168] Here, the pixels included in each display region provided in the display device and the transistors used in each driving circuit are It is preferable to use an oxide semiconductor for a semiconductor device such as a transistor. It is preferable to use an oxide semiconductor having a larger band gap than silicon. If a semiconductor material with a wide band gap and low carrier density is used, This is preferable because it can reduce the current when the capacitor is in the off state.

[0169] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) nothing.

[0170] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0171] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display panels that are used in a curved state. You can be there.

[0172] By using such materials for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and reliability is improved. High-performance transistors can be realized.

[0173] In addition, due to its low off-state current, the charge stored in the capacitance can be released for a long period of time via the transistor. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in the display area. As a result, electronic equipment with extremely reduced power consumption can be realized.

[0174] The preferred oxide semiconductors applicable to the semiconductor layer and their forming methods are as follows: This will be explained in detail in a later embodiment.

[0175] A method for forming a flexible light-emitting panel will now be described.

[0176] For convenience, the term "a configuration including pixels and drive circuits" is used here, and the term "a configuration including optical members such as color filters" is used here. The element layer includes, for example, a display element, and in addition to the display element, It has wiring that electrically connects elements, and elements such as transistors used in pixels and circuits. Good too.

[0177] Here, the support having an insulating surface on which the element layer is formed is referred to as a substrate. Let's say.

[0178] As a method for forming an element layer on a substrate having a flexible insulating surface, a method for forming a layer directly on the substrate can be used. A method for forming a contact element layer and a method for forming an element layer on a support substrate having a different rigidity from the substrate. Thereafter, the element layer is peeled off from the support base material and transferred onto the base material.

[0179] If the material constituting the base material is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed in a state where the element is fixed to the support substrate, it is easy to transport the element within and between devices. This is preferable because it makes things easier.

[0180] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to a substrate, the supporting substrate is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support substrate and the element layer are peeled off and transferred to the substrate. The material may be selected so that release occurs at the interface of the edge layer or in the release layer.

[0181] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer including a material is stacked, and a layer in which silicon nitride or silicon oxynitride is stacked on a peeling layer. It is preferable to use a high melting point metal material. The degree of freedom in the process of forming the element layer is increased. This is desirable.

[0182] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by breaking down the peeling interface. The peeling may be performed by dropping a liquid onto a portion of the surface and allowing it to penetrate the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, taking advantage of the difference in thermal expansion.

[0183] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peel layer. For example, glass is used as the support substrate and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point. Alternatively, the separation may be performed at the interface between the glass and the insulating layer. Providing a metal layer between the edge layers and heating the metal layer by passing an electric current through the metal layer. The metal layer and the insulating layer may be peeled off at the interface by the organic resin. The insulating layer can be used as a substrate.

[0184] Examples of flexible substrates include polyethylene terephthalate (PET), poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Resins, polyamide-imide resins, polyvinyl chloride resins, etc. are particularly suitable. It is preferable to use a material with a low thermal expansion coefficient, for example, 30×10 -6 / K or less Polyamide-imide resin, polyimide resin, PET, etc. can be suitably used. Substrates made of resin-impregnated fibers (also called prepregs) and inorganic fillers mixed with organic resins are also used. It is also possible to use a substrate with a reduced thermal expansion coefficient.

[0185] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, and polyamide fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxide Examples of the fiber include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from glass, S-glass, D-glass, and Q-glass. Alternatively, the fiber is used in a nonwoven state, and the resin is impregnated into the fiber body, and the resin is hardened to form a flexible structure. As a flexible substrate, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage due to bending or local pressure. stomach.

[0186] Note that the display device of one embodiment of the present invention is an active matrix display device having active elements in pixels. Alternatively, a passive matrix system in which the pixels do not have active elements can be used.

[0187] In the active matrix system, the active element (active element, nonlinear element) is a transistor. By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) or T It is also possible to use FD (Thin Film Diode) and other elements. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size. This makes it possible to achieve low power consumption and high brightness.

[0188] Other than the active matrix type, active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements (active elements). Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Alternatively, active elements (active elements, non-linear elements) can be used. Since the aperture ratio is not increased, it is possible to achieve low power consumption or high brightness. This can be done.

[0189] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0190] (Embodiment 7) In this embodiment, a touch panel that can be applied to an electronic device of one embodiment of the present invention will be described. The structure will be described with reference to FIG. 27. This touch panel is foldable. The configuration may be as follows.

[0191] FIG. 27 is a cross-sectional view of the touch panel 500.

[0192] The touch panel 500 includes a display unit 501 and a touch sensor 595. The panel 500 includes a substrate 510, a substrate 570, and a substrate 590. Both substrate 570 and substrate 590 may be flexible.

[0193] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a display panel for supplying signals to the pixels. The plurality of wirings 511 are arranged on the outer periphery of the substrate 510. The terminal 519 is connected to the FPC 509 ( 1) and electrically connect.

[0194] <Touch sensor> The substrate 590 includes a touch sensor 595 and a plurality of electrodes electrically connected to the touch sensor 595. The wiring 598 is routed around the periphery of the substrate 590, and some of the wiring 598 The terminal is electrically connected to the FPC 509(2).

[0195] As the touch sensor 595, for example, a capacitance type touch sensor can be applied. The capacitance type includes a surface capacitance type, a projected capacitance type, and the like.

[0196] The projected capacitive type is mainly divided into self-capacitance type and mutual capacitance type, which differ mainly in the driving method. The mutual capacitance method is preferable because it allows simultaneous multi-point detection.

[0197] In the following, a case where a projected capacitive touch sensor is applied will be described.

[0198] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger are used. It can be used.

[0199] The projected capacitive touch sensor 595 has an electrode 591 and an electrode 592. 591 is electrically connected to one of the plurality of wirings 598, and the electrode 592 is electrically connected to one of the plurality of wirings 598. and electrically connect to any other of the above.

[0200] The wiring 594 electrically connects the two electrodes 591 that sandwich the electrode 592. It is preferable to have a shape that minimizes the area of ​​the intersection between the electrode 592 and the wiring 594. This reduces the area of ​​the region where no electrodes are provided, and reduces variations in transmittance. As a result, unevenness in brightness of light passing through the touch sensor 595 can be reduced.

[0201] The electrodes 591 and 592 may have various shapes. 91 are arranged with as little gap as possible, and the electrode 592 is connected to the electrode 59 via an insulating layer. It is also possible to provide a plurality of such electrodes spaced apart from each other so that there is an area that does not overlap with the adjacent electrodes. If a dummy electrode electrically insulated from the two adjacent electrodes 592 is provided between them, This is preferable because the area of ​​the region with different transmittances can be reduced.

[0202] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and and electrode 592, an insulating layer 593 covering electrode 591 and electrode 592, and adjacent electrodes 591 and a wiring 594 for electrically connecting the

[0203] The adhesive layer 597 adheres the substrate 590 to the touch sensor 595 so that the touch sensor 595 overlaps the display unit 501. It is glued to board 570.

[0204] The electrode 591 and the electrode 592 are formed using a light-transmitting conductive material. Conductive materials that can be used include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide and zinc oxide doped with gallium, or graphene are used. It is possible.

[0205] After forming a film of a light-transmitting conductive material on a substrate 590 by sputtering, By using various patterning techniques such as lithography, unnecessary parts are removed to form electrodes 59. 1 and electrode 592 can be formed. Graphene can be obtained by CVD or by graphite oxide. Alternatively, the film may be formed by applying a solution in which the fluorine is dispersed and then reducing the solution.

[0206] The insulating layer 593 may be made of a resin such as acrylic or epoxy. In addition to resins with siloxane bonds, silicon oxide, silicon oxynitride, and aluminum oxide Inorganic insulating materials such as the above may also be used.

[0207] An opening reaching the electrode 591 is provided in the insulating layer 593, and a wiring 594 is formed on the adjacent electrode 591. The transparent conductive material increases the aperture ratio of the touch panel. Therefore, it can be suitably used for the wiring 594. 2. Materials with higher conductivity can reduce electrical resistance and are therefore suitable for use as wiring 594. can.

[0208] One electrode 592 extends in one direction, and multiple electrodes 592 are provided in a stripe pattern. .

[0209] The wiring 594 is provided to intersect with the electrodes 592 .

[0210] A pair of electrodes 591 are provided with one electrode 592 sandwiched therebetween, and wiring 594 is connected to the pair of electrodes 591 are electrically connected.

[0211] The plurality of electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one electrode 592. The angle between the two electrodes may be less than 90 degrees.

[0212] One of the wirings 598 is electrically connected to the electrode 591 or the electrode 592. The wiring 598 is made of, for example, aluminum, gold, platinum, silver, or the like. , nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or para Metallic materials such as zinc and alloy materials containing such metallic materials can be used.

[0213] Note that an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0214] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0215] The connection layer 599 is an anisotropic conductive film (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) c Conductive Paste) can be used.

[0216] The adhesive layer 597 is transparent. For example, a thermosetting resin or an ultraviolet curing resin may be used. Specifically, the resin may have an acrylic, urethane, epoxy, or siloxane bond. Resins such as resins can be used.

[0217] <Display> The display unit 501 includes a plurality of pixels arranged in a matrix. The display device includes a pixel circuit that drives the display element.

[0218] In this embodiment, a white organic electroluminescence element is applied to a display element. The display element is not limited to this. For example, a red organic electroluminescent element and a blue organic electroluminescent element are used. A green organic electroluminescent element and a green organic electroluminescent element may be used. stomach.

[0219] For example, as display elements, in addition to organic electroluminescence elements, electrophoretic and electroluminescent elements are also available. Display elements that display using a liquid crystal display method (also called electronic ink), shutter-type Various display elements can be used, such as MEMS display elements and optical interference type MEMS display elements. It is possible to select and use a configuration suitable for the display element to be applied from various pixel circuits. This can be done.

[0220] The substrate 510 includes a flexible substrate 510b and a barrier layer 510c that prevents impurities from diffusing into the light-emitting element. The film 510a and the adhesive layer 510c that bonds the substrate 510b and the barrier film 510a are laminated. It is a laminate obtained by

[0221] The substrate 570 includes a flexible substrate 570b and a barrier layer 570c that prevents impurities from diffusing into the light-emitting element. Lamination of film 570a and adhesive layer 570c bonding the substrate 570b and barrier film 570a It is the body.

[0222] The sealing material 560 bonds the substrate 570 to the substrate 510. The sealing material 560 is more resistant to heat than air. In addition, when light is extracted to the sealing material 560 side, the sealing material 560 has a high refractive index. The pixel circuit and the light emitting element (for example, the first light emitting element 550R) are mounted on the substrate 5 10 and the substrate 570.

[0223] 《Pixel configuration》 The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.

[0224] The subpixel 502R provides power to the first light-emitting element 550R and the second light-emitting element 550R. The pixel circuit includes a transistor 502t that can supply a light. The filter 580R includes a first light-emitting element 550R and an optical element (e.g., a color layer 567R). .

[0225] The first light emitting element 550R has a lower electrode, an upper electrode, and a light emitting element between the lower electrode and the upper electrode. The layer includes an organic compound.

[0226] The light emitting module 580R has a first colored layer 567R in the direction in which light is extracted. The layer may transmit light of a particular wavelength, such as red, green, or blue. In other sub-pixels, a sub-pixel that selectively transmits light exhibiting the following characteristics can be used. A region that transmits light emitted from the light emitting element may be provided.

[0227] In addition, when the sealing material 560 is provided on the light extraction side, the sealing material 560 is It contacts the light emitting element 550R and the first colored layer 567R.

[0228] The first colored layer 567R is located so as to overlap the first light emitting element 550R. A part of the light emitted by the first light emitting element 550R is transmitted through the first colored layer 567R and becomes The light is emitted to the outside of light emitting module 580R in the direction of the arrow.

[0229] <<Display Configuration>> The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. , and is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0230] The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixel. For example, a circular polarizer can be used as p.

[0231] The display portion 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing the diffusion of impurities may be applied to the insulating film 521. This can reduce the reliability of the transistor 502t and the like due to the diffusion of impurities. This can suppress the decline in

[0232] The display unit 501 has a light-emitting element (for example, a first light-emitting element 550R) on an insulating film 521. do.

[0233] The display portion 501 has a partition wall 528 on the insulating film 521, which overlaps with an end portion of the first lower electrode. In addition, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528 .

[0234] <Configuration of Scanning Line Driving Circuit> The scanning line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Note that the driver circuit and the pixel circuit can be formed over the same substrate in the same process.

[0235] Other Configurations The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is connected to the wiring 511. 11. Signals such as image signals and synchronization signals can be supplied. The FPC 509(1) is electrically connected to the terminal 519.

[0236] A printed wiring board (PWB) may be attached to the FPC509(1). stomach.

[0237] <Display unit variation 1> Various transistors can be applied to the display portion 501 .

[0238] A configuration in which a bottom gate transistor is applied to the display portion 501 is shown in FIG. and is illustrated in FIG. 27(B).

[0239] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown.

[0240] For example, a semiconductor layer containing polycrystalline silicon or the like is formed as a transistor 5 shown in FIG. 02t and transistor 503t.

[0241] A configuration in which a top-gate transistor is applied to the display portion 501 is shown in FIG. As illustrated in the figure.

[0242] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown in FIG. 7(C). can.

[0243] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0244] (Embodiment 8) In this embodiment, a touch panel that can be applied to an electronic device of one embodiment of the present invention will be described. The structure will be described with reference to FIG. 28. This touch panel is foldable. The configuration may be as follows.

[0245] FIG. 28 is a cross-sectional view of touch panel 500B.

[0246] The touch panel 500B described in this embodiment converts supplied image information into transistors. The display unit 501 is provided on the side where the touch sensor is provided. The difference from the touch panel 500 described in the seventh embodiment is that it is provided on the plate 510 side. Here, the different configurations are described in detail, and where similar configurations can be used, , the above description is incorporated herein by reference.

[0247] <Display> The display unit 501 includes a plurality of pixels arranged in a matrix. The display device includes a pixel circuit that drives the display element.

[0248] 《Pixel configuration》 The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.

[0249] The subpixel 502R provides power to the first light-emitting element 550R and the second light-emitting element 550R. The pixel circuit includes a transistor 502t that can supply a

[0250] The light emitting module 580R includes a first light emitting element 550R and an optical element (e.g., a color layer 56 7R).

[0251] The light-emitting element 550R includes a lower electrode, an upper electrode, and a light-emitting organic compound layer between the lower electrode and the upper electrode. The layer includes a compound.

[0252] The light emitting module 580R has a first colored layer 567R in the direction in which light is extracted. The layer may transmit light of a particular wavelength, such as red, green, or blue. In other sub-pixels, a sub-pixel that selectively transmits light exhibiting the following characteristics can be used. A region that transmits light emitted from the light emitting element may be provided.

[0253] The first colored layer 567R is located so as to overlap the first light emitting element 550R. The first light emitting element 550R shown in A) emits light toward the side where the transistor 502t is provided. As a result, part of the light emitted by the light emitting element 550R passes through the first colored layer 567R. The light passes through the light emitting module 580R and is emitted to the outside of the light emitting module 580R in the direction of the arrow shown in the figure.

[0254] <<Display Configuration>> The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. , and is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0255] The display portion 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing the diffusion of impurities may be applied to the insulating film 521. This can prevent, for example, transistors caused by impurities diffusing from the colored layer 567R. This can prevent the reliability of the transistor 502t and the like from decreasing.

[0256] <Touch sensor> The touch sensor 595 is provided on the substrate 510 side of the display unit 501 (FIG. 28(A)). reference).

[0257] The adhesive layer 597 is located between the substrate 510 and the substrate 590, and connects the display unit 501 and the touch sensor 5 Glue 95 together.

[0258] <Display unit variation 1> Various transistors can be applied to the display portion 501 .

[0259] A configuration in which a bottom gate transistor is applied to the display portion 501 is shown in FIG. and is illustrated in FIG. 28(B).

[0260] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown.

[0261] For example, a semiconductor layer containing polycrystalline silicon or the like is formed as a transistor 5 shown in FIG. 02t and transistor 503t.

[0262] A configuration in which a top-gate transistor is applied to the display portion 501 is shown in FIG. As illustrated in the figure.

[0263] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film is formed as shown in FIG. 8(C) can be applied to the transistor 502t and the transistor 503t shown in FIG. can.

[0264] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0265] (Embodiment 9) In this embodiment, a semiconductor layer of a semiconductor device that can be used for a display panel of one embodiment of the present invention An oxide semiconductor that can be suitably used will be described.

[0266] Oxide semiconductors have a large energy gap of 3.0 eV or more, making them suitable for The oxide semiconductor film obtained by processing under suitable conditions and sufficiently reducing the carrier density is applied. In a transistor with this structure, the leakage current between the source and drain in the off state (off current) can be made extremely low compared to conventional silicon-based transistors. .

[0267] As applicable oxide semiconductors, at least indium (In) or zinc (Zn ) is preferably contained. In particular, it is preferably contained In and Zn. As a stabilizer to reduce the variation in the electrical characteristics of transistors using In addition to gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) , titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (e.g. , cerium (Ce), neodymium (Nd), gadolinium (Gd), or It is preferable that one or more types are contained.

[0268] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and In-Zn oxide. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids oxides, In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (also written as In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Z n-based oxides, In-Zr-Zn-based oxides, In-Ti-Zn-based oxides, In-Sc-Zn In-Y-Zn oxide, In-La-Zn oxide, In-Ce-Zn oxide oxides, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides , In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn ​​oxide, I n-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga- Zn-based oxides, In-Sn-Al-Zn-based oxides, In-Sn-Hf-Zn-based oxides, I n-Hf-Al-Zn oxides can be used.

[0269] Here, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. The ratio of In, Ga, and Zn does not matter. The metal elements may be included.

[0270] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0 and m is not an integer ) may be used, where M is selected from Ga, Fe, Mn and Co. It indicates one or more metal elements, or the above-mentioned stabilizer elements. In addition, as an oxide semiconductor, In2SnO5(ZnO) n (n>0 and n is an integer) Materials expressed as follows may also be used.

[0271] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A Or In-Ga-Zn oxide with an atomic ratio of In:Ga:Zn=2:1:3 and its composition It is preferable to use an oxide in the vicinity of

[0272] When a large amount of hydrogen is contained in the oxide semiconductor film, the hydrogen is bonded to the oxide semiconductor. Some of the elements become donors, generating electrons as carriers. Therefore, the threshold voltage of the oxide semiconductor film is shifted in the negative direction. After that, dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film. It is preferable to remove impurities to achieve high purity so that the impurities are not included as much as possible.

[0273] Note that dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film As described above, after the oxide semiconductor film is formed, oxygen may also be reduced. Then, dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film. It is purified to minimize impurities and is increased by dehydration treatment (dehydrogenation treatment). In order to compensate for the oxygen vacancies, treatment for adding oxygen to the oxide semiconductor film is preferably performed. In this specification and the like, supplying oxygen to an oxide semiconductor film is referred to as oxygen-adding treatment. In some cases, the amount of oxygen contained in the oxide semiconductor film may be higher than the stoichiometric composition. This is sometimes referred to as peroxygen treatment.

[0274] In this way, the oxide semiconductor film is dehydrated by dehydration treatment (dehydrogenation treatment). By removing oxygen and filling the oxygen vacancies through oxygen addition treatment, the i-type (intrinsic) or The oxide semiconductor film can be an oxide semiconductor film that is very close to i-type and is substantially i-type (intrinsic). Note that the term "substantially intrinsic" means that there are very few carriers derived from donors in the oxide semiconductor film. (close to zero), and the carrier density is 1×10 17 / cm 3 Below, 1×10 16 / cm 3below , 1×10 15 / cm 3 Below, 1×10 14 / cm 3 Below, 1×10 13 / cm 3 below, Particularly preferably 8 × 10 11 / cm 3 less than 1×10 11 / cm 3 less than , and more preferably 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 That's all This means that.

[0275] In addition, a transistor including an i-type or substantially i-type oxide semiconductor film can be For example, a transistor using an oxide semiconductor film can be The drain current when the capacitor is off is 1×10 at room temperature (approximately 25°C). -18 Below A, Preferably 1 x 10 -21 A or less, more preferably 1×10 -24 A or below, or 85 1 x 10 at °C -15 A or less, preferably 1×10 -18 A or less, more preferably 1x 10 -21 A or less. Note that the transistor being in the off state is an n-channel In the case of a transistor of this type, this refers to a state in which the gate voltage is sufficiently smaller than the threshold voltage. In general, if the gate voltage is 1V or more, 2V or more, or 3V or more less than the threshold voltage, The transistor is turned off. The voltage is, for example, 1V, 5V, or 10V.

[0276] The structure of the oxide semiconductor film will be described below.

[0277] Oxide semiconductor films are roughly classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. The non-single-crystal oxide semiconductor film is a CAAC-OS (C Axis Aligned Crystal Polycrystalline oxide semiconductor film The oxide semiconductor film includes a film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, and the like.

[0278] First, we will explain the CAAC-OS film. These oxide semiconductors are called "Oxide Semiconductors with Axis-Aligned Nanocrystals" It is also possible.

[0279] The CAAC-OS film is one of the oxide semiconductor films that has multiple crystal parts aligned along the c-axis. .

[0280] The CAAC-OS film was observed under a transmission electron microscope (TEM). When observed under a tron ​​microscope, clear boundaries between the crystals are observed. It is not possible to confirm the grain boundary. It can be said that the AAC-OS film is less susceptible to the decrease in electron mobility caused by grain boundaries.

[0281] The CAAC-OS film was observed by TEM from a direction roughly parallel to the sample surface (cross-sectional TEM observation). When observed, it can be confirmed that metal atoms are arranged in layers in the crystalline part. Each layer of the CAAC-OS film is formed on a surface (also called a surface to be formed) or on a concave surface of the upper surface. The shape reflects the convexity and is aligned parallel to the surface on which the CAAC-OS film is formed or the upper surface.

[0282] On the other hand, the CAAC-OS film was observed by TEM from a direction approximately perpendicular to the sample surface (plane T EM observation reveals that metal atoms are arranged in triangular or hexagonal shapes in the crystalline region. However, no regularity was observed in the arrangement of metal atoms between different crystal regions. do not have.

[0283] FIG. 29(a) is a cross-sectional TEM image of the CAAC-OS film. This is a cross-sectional TEM image of 29(a) enlarged, with the atomic arrangement emphasized for easier understanding. The key is displayed.

[0284] Figure 29(c) shows the area surrounded by a circle (diameter approximately 4 mm) between AO and A' in Figure 29(a). From Figure 29(c), it is clear that the c-axis orientation is In addition, the c-axis orientation is different between A-O and O-A', so different graphs are formed. The c-axis angles between the A and A crystals are 14.3° and 16. 6°, 26.4°, and so on. Between these, the angle of the c-axis gradually changes to -18.3°, -17.6°, and -15.9°. It is clear that things are changing.

[0285] When electron diffraction is performed on the CAAC-OS film, spots (bright spots) indicating orientation are observed. For example, a thickness of 1 nm to 30 nm on the top surface of the CAAC-OS film is observed. When electron diffraction using an electron beam (also called nanobeam electron diffraction) is performed, spots are observed. (See Figure 30(A)).

[0286] Cross-sectional and planar TEM observations revealed that the crystals in the CAAC-OS film had an orientation. It can be seen that this is the case.

[0287] Most of the crystals in the CAAC-OS film are cubic crystals with sides of less than 100 nm. Therefore, the crystal part in the CAAC-OS film has a side length of 10 This also includes cases where the size fits within a cube of less than 5 nm, or less than 3 nm. However, multiple crystals in the CAAC-OS film are connected to form a single large crystal domain. For example, in a planar TEM image, 2 Over 5μm 2 More than or equal to 1000 μm 2 Crystal regions with more than this size may be observed.

[0288] X-ray diffraction (XRD) of the CAAC-OS film When structural analysis is performed using this device, for example, CAAC-OS with InGaZnO4 crystals can be seen. In the out-of-plane analysis of the film, the diffraction angle (2θ) peaks around 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis faces the surface on which the film is formed or the upper surface. It can be seen that the direction is roughly vertical.

[0289] On the other hand, the in-p X-rays incident on the CAAC-OS film are perpendicular to the c-axis. In the Lane analysis, a peak may appear around 2θ of 56°. The crystal structure of InGaZnO4 is composed of a single crystal of InGaZnO4. In the case of a nitride semiconductor film, 2θ is fixed at around 56°, and the normal vector of the sample surface is the axis (φ axis). When the sample is rotated and analyzed (φ scan), a crystal plane equivalent to the (110) plane is detected. In contrast, in the case of the CAAC-OS film, six peaks are observed, which are assigned to 2θ. Even when the φ is fixed at around 56° and scanned, no clear peak appears.

[0290] From the above, it can be concluded that the orientation of the a-axis and b-axis is uniform between different crystal regions in the CAAC-OS film. Although it is irregular, it has a c-axis orientation, and the c-axis is parallel to the normal vector of the surface on which it is formed or the upper surface. Therefore, the layered structure confirmed by the cross-sectional TEM observation mentioned above is consistent with the Each layer of arranged metal atoms is a plane parallel to the ab plane of the crystal.

[0291] The crystalline part is formed when the CAAC-OS film is formed or after a crystallization treatment such as a heat treatment. As described above, the c-axis of the crystal is aligned with the surface on which the CAAC-OS film is to be formed. Therefore, for example, in the CAAC-OS film, When the shape is changed by etching, the c-axis of the crystal is aligned with the CAAC-OS film. It may not be parallel to the normal vector of the face or top surface.

[0292] Furthermore, the distribution of c-axis oriented crystals in the CAAC-OS film does not need to be uniform. For example, the crystalline part of the CAAC-OS film is grown from the top surface of the CAAC-OS film. Therefore, when the crystal is formed, the region near the top surface has a crystal orientation that is more c-axis oriented than the region near the surface on which the crystal is formed. In addition, the CAAC-OS film containing impurities may have a high percentage of impurities. The region where the ZnO was added was transformed, and regions with different proportions of c-axis oriented crystals were formed. This may also occur.

[0293] In addition, the out-of-plane structure of the CAAC-OS film with InGaZnO4 crystals In the analysis by the NMR method, in addition to the peak at 2θ near 31°, a peak also appeared at 2θ near 36°. The peak at 2θ around 36° is due to the presence of c-axis orientation in part of the CAAC-OS film. The CAAC-OS film contains crystals that do not have crystalline structure. It is preferable that the peak is exhibited at 2θ of about 36° and that the peak is not exhibited at 2θ of about 36°.

[0294] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. The oxide semiconductor film is made of an element other than the main component, such as silicon or a transition metal element. The elements such as ZnO, which have stronger bonding strength with oxygen than the metal elements constituting the oxide semiconductor film, By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, and the crystallinity is reduced. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide are Because the diameter (or molecular radius) is large, when the molecule is contained inside the oxide semiconductor film, The impurities contained in the oxide semiconductor film are likely to disturb the atomic arrangement of the oxide semiconductor film, which may result in a decrease in crystallinity. The pure material may act as a carrier trap or a carrier generation source.

[0295] The CAAC-OS film is an oxide semiconductor film with a low density of defect states. Oxygen vacancies in semiconductor films can act as carrier traps and trap hydrogen. This can become a carrier generation source.

[0296] The low impurity concentration and low defect level density (low oxygen vacancies) are called high-purity intrinsic or The term "high-purity intrinsic" refers to a substantially high-purity intrinsic oxide semiconductor. Since the film has a small number of carrier generation sources, the carrier density can be reduced. The transistor using the oxide semiconductor film has electrical characteristics (noise) such that the threshold voltage is negative. It is also called "marine.") It is rare for it to become pure or substantially pure. An intrinsic oxide semiconductor film has few carrier traps. Transistors using this film have little fluctuation in electrical characteristics and are highly reliable. Note that it takes time for the charges trapped in the carrier traps in the oxide semiconductor film to be released. The time is long and the charge may behave as if it is fixed. Therefore, a transistor using an oxide semiconductor film with a high density of defect states has unstable electrical characteristics. This may be the case.

[0297] In addition, the electrical characteristics of transistors using CAAC-OS films are improved by irradiation with visible light or ultraviolet light. There is little gender variation.

[0298] Next, a microcrystalline oxide semiconductor film will be described.

[0299] In the microcrystalline oxide semiconductor film, crystal parts can be clearly seen in the TEM image. The crystal parts contained in the microcrystalline oxide semiconductor film may have a size of 1 nm or more and 100 nm or more. In particular, the size of the particles is between 1 nm and 10 nm. Nanocrystals (nc) are microcrystals with a diameter of 1 nm or less, or 1 nm to 3 nm. The oxide semiconductor film having nc-OS (nanocrystalline O The nc-OS film is called an oxide semiconductor film. In some cases, the grain boundaries cannot be clearly identified in the EM observation image. , oxidation with RANC (Random Aligned nanocrystals) semiconductors or NANC (Non-Aligned nanocrystals) The oxide semiconductor may also be called an oxide semiconductor.

[0300] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or less). The nc-OS film has a periodic atomic arrangement in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts, and therefore no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analytical method. For example, XRD, which uses X-rays with a diameter larger than that of the crystal part, is used for nc-OS films. When structural analysis is performed using the device, the crystal plane is analyzed using the out-of-plane method. In addition, the peaks shown in the figure are not detected in the nc-OS film because the probe diameter is larger than that of the crystalline part. Electron diffraction (also called selected area electron diffraction) is performed using an electron beam (for example, 50 nm or larger). On the other hand, for the nc-OS film, Nanobeam electron circuit using an electron beam with a probe diameter close to or smaller than the size of the crystal part. When the nc-OS film was subjected to nanobeam electron diffraction, spots were observed. When the image is taken, a circular (ring-shaped) area of ​​high brightness may be observed. When nanobeam electron diffraction was performed on the c-OS film, multiple spots were observed within the ring-shaped region. It may be observed (see Figure 30(B)).

[0301] The nc-OS film is an oxide semiconductor film with higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, there is no regularity in the crystal orientation between different crystal parts. The OS film has a higher density of defect states than the CAAC-OS film.

[0302] The oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, or a C The AAC-OS film may be a laminate film having two or more kinds of films.

[0303] When an oxide semiconductor film has multiple structures, the structure can be resolved by using nanobeam electron diffraction. analysis may be possible.

[0304] FIG. 30(C) shows the electron gun chamber 10, the optical system 12 below the electron gun chamber 10, and the optical system 12 below the optical system 12. a sample chamber 14, an optical system 16 below the sample chamber 14, an observation chamber 20 below the optical system 16, and an observation A transillumination system having a camera 18 installed in a chamber 20 and a film chamber 22 below the observation chamber 20. The figure shows a device for measuring electron diffraction. The camera 18 is installed facing the inside of the observation chamber 20. The room chamber 22 may not be provided.

[0305] FIG. 30(D) shows the internal structure of the transmission electron diffraction measurement device shown in FIG. 30(C). Inside the transmission electron diffraction measurement device, electrons emitted from an electron gun installed in the electron gun chamber 10 is irradiated onto a substance 28 placed in the sample chamber 14 via the optical system 12. The electrons are incident on a fluorescent screen 32 installed inside the observation chamber 20 via the optical system 16. On the light plate 32, a pattern appears according to the intensity of the incident electrons, which is called a transmission electron diffraction pattern. It is possible to measure the

[0306] The camera 18 is set facing the fluorescent screen 32 and captures the pattern that appears on the fluorescent screen 32. A line passing through the center of the lens of the camera 18 and the center of the fluorescent screen 32 is The angle between the line and the upper surface of the fluorescent screen 32 is, for example, 15° or more and 80° or less, or 30° or more. The angle is set to 75° or less, or 45° to 70°. The smaller the angle, the more accurate the image captured by the camera 18. However, if the angle is known in advance, the resulting transmission electron diffraction pattern will be distorted. If the data is corrected, it is possible to correct distortions in the obtained transmission electron diffraction pattern. In some cases, the camera 18 may be placed in the film chamber 22. For example, The fluorescent screen may be installed in the room chamber 22 so as to face the direction of incidence of the electrons 24. A transmission electron diffraction pattern with little distortion can be taken from the back side of 32.

[0307] A holder for fixing a substance 28, which is a sample, is installed in the sample chamber 14. The holder is structured to be transparent to electrons passing through the material 28. The holder may have a function to move the object 28 along the X-axis, Y-axis, Z-axis, etc. For example, 1 nm or more and 10 nm or less, 5 nm or more and 50 nm or less, 10 nm or more and 100 nm or less The range of movement is 50 nm to 500 nm, 100 nm to 1 μm, etc. These ranges can be set optimally depending on the structure of the substance 28. That's fine.

[0308] Next, the transmission electron diffraction pattern of the substance is measured using the above-mentioned transmission electron diffraction measurement device. This article explains how to do this.

[0309] For example, as shown in FIG. 30(D), the irradiation position of the electron 24, which is a nanobeam, in the material By changing (scanning) the In this case, if the substance 28 is a CAAC-OS film, the film shown in FIG. Alternatively, if the material 28 is an nc-OS film, the diffraction pattern shown in Figure 30(B) is The diffraction pattern shown is observed.

[0310] By the way, even if material 28 is a CAAC-OS film, it may be partially composed of nc-OS films. Therefore, the quality of the CAAC-OS film can be determined by the diffraction pattern. , the ratio of the area where the diffraction pattern of the CAAC-OS film is observed in a certain range (CAA For example, in a high-quality CAAC-OS film, If present, the CAAC conversion rate is 50% or more, preferably 80% or more, and more preferably 90% or more. The diffraction pattern is different from that of the CAAC-OS film. The percentage of the area where this is observed is denoted as the non-CAAC rate.

[0311] As an example, immediately after film formation (denoted as as-sputtered), or in an atmosphere containing oxygen The top surface of each sample with the CAAC-OS film after the heat treatment at 450°C in air was scanned. Transmission electron diffraction patterns were acquired while scanning at a speed of 5 nm / s for 60 seconds. The diffraction pattern was observed while scanning, and the observed diffraction pattern was captured as a still image every 0.5 seconds. The CAAC rate was calculated by converting the electron beam into the probe diameter of 1n. The same measurement was carried out on six samples. The rate was calculated using the average value of six samples.

[0312] The CAAC conversion rate for each sample is shown in Figure 31(A). The AAC conversion rate was 75.7% (non-CAAC conversion rate was 24.3%). The CAAC content of the treated CAAC-OS membrane was 85.3% (non-CAAC content was 14.7%). It can be seen that the CAAC conversion rate is higher after heat treatment at 450°C than immediately after film formation. That is, the non-CAAC rate is reduced by heat treatment at a high temperature (for example, 400°C or higher). It can be seen that the CAAC conversion rate increases (the CAAC conversion rate increases). It can be seen that a CAAC-OS film with a high CAAC content can be obtained even with the SiO2 solution.

[0313] Here, most of the diffraction patterns different from those of the CAAC-OS film are similar to those of the nc-OS film. The amorphous oxide semiconductor film was not observed in the measurement area. Therefore, the heat treatment did not produce a region with a structure similar to that of the nc-OS film. However, it is suggested that the structure of the adjacent region influences the rearrangement and formation of CAAC. .

[0314] 31(B) and 31(C) show the CAAC- 31(B) and 31(C) are planar TEM images of the OS film. It can be seen that the CAAC-OS film after the heat treatment at 50°C has a more uniform film quality. It can be seen that the film quality of the CAAC-OS film is improved by heat treatment at a low temperature.

[0315] This measurement method makes it possible to analyze the structure of oxide semiconductor films with multiple structures. This may be the case.

[0316] The CAAC-OS film can be formed, for example, by the following method.

[0317] The CAAC-OS film can be formed by sputtering a polycrystalline oxide semiconductor target. The film is formed by sputtering.

[0318] By increasing the substrate temperature during film formation, migration of sputtered particles after reaching the substrate is prevented. Specifically, the substrate temperature is set to 100°C or higher and 740°C or lower, preferably 200°C or higher. The film is formed at a temperature of 500°C or less. By increasing the substrate temperature during film formation, the sputtering particles When the particles reach the substrate, migration occurs on the substrate, and the sputtered particles are flattened. At this time, the sputtering particles are positively charged, The ring particles repel each other while adhering to the substrate, resulting in uneven sputtering. Therefore, a CAAC-OS film with a uniform thickness can be formed without overlapping.

[0319] By reducing the amount of impurities mixed in during film formation, it is possible to prevent the crystal state from being destroyed by impurities. For example, the concentration of impurities (hydrogen, water, carbon dioxide, nitrogen, etc.) present in the film formation chamber can be In addition, the impurity concentration in the deposition gas can be reduced. A deposition gas at a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0320] In addition, by increasing the oxygen ratio in the deposition gas and optimizing the power, plasma damage during deposition can be reduced. The oxygen ratio in the film forming gas is 30% by volume or more, preferably 100% by volume or more. Expressed as volume %.

[0321] Alternatively, the CAAC-OS film is formed by the following method.

[0322] First, a first oxide semiconductor film is formed to a thickness of 1 nm or more and less than 10 nm. The semiconductor film is formed by sputtering. Specifically, the substrate temperature is set to 100°C or higher. The temperature is set to 500°C or less, preferably 150°C to 450°C, and the oxygen ratio in the deposition gas is set to 30 The film is formed at a concentration of at least 100% by volume, preferably 100% by volume.

[0323] Next, heat treatment is performed to convert the first oxide semiconductor film into a first CAAC-OS film having high crystallinity. The temperature of the heat treatment is 350°C or higher and 740°C or lower, preferably 450°C or higher and 650°C or lower. The heat treatment time is 1 minute to 24 hours, preferably 6 minutes to 4 hours. The heat treatment may be carried out in an inert atmosphere or an oxidizing atmosphere. Alternatively, heat treatment is performed in an inert atmosphere, and then heat treatment is performed in an oxidizing atmosphere. By the heat treatment in the atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies are generated in the first oxide semiconductor film by heat treatment in an inert atmosphere. In this case, the oxygen deficiency can be reduced by heat treatment in an oxidizing atmosphere. Heat treatment can be carried out at a pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or The step of removing the oxide semiconductor film from the first oxide semiconductor film may be performed under a reduced pressure of 1 Pa or less. can be reduced in an even shorter time.

[0324] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm. Compared with a thickness of 0 nm or more, it can be easily crystallized by heat treatment.

[0325] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed to a thickness of 10 nm or more. The second oxide semiconductor film is formed to a thickness of 0 nm or less by sputtering. Specifically, the substrate temperature is set to 100°C or higher and 500°C or lower, preferably 150°C or higher and 450°C or lower. The temperature is set to 0°C or lower, and the oxygen ratio in the film-forming gas is set to 30% by volume or more, preferably 100% by volume. To film.

[0326] Next, heat treatment is performed to form a second oxide semiconductor film from the first CAAC-OS film by solid-phase growth. The second CAAC-OS film was obtained by heating at a temperature of 350 The temperature is set to 740°C or higher, preferably 450°C or higher and 650°C or lower. The heating time is from 1 minute to 24 hours, preferably from 6 minutes to 4 hours. The heat treatment may be carried out in an inert atmosphere or an oxidizing atmosphere. Preferably, the heat treatment is carried out in an inert atmosphere. After that, heat treatment is performed in an oxidizing atmosphere. The impurity concentration of the nitride semiconductor film can be reduced in a short time. Oxygen vacancies may be generated in the second oxide semiconductor film by the heat treatment. The oxygen deficiency can be reduced by heat treatment in a reactive atmosphere. It may be carried out under reduced pressure of 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced in a shorter time. Cut.

[0327] In this manner, a CAAC-OS film having a total thickness of 10 nm or more is formed. can be done.

[0328] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0329] (Embodiment 10) In other embodiments, various examples have been shown. However, one aspect of the present invention is that Not limited to:

[0330] For example, in this specification, transistors having various structures are used as transistors. Therefore, there is no limitation on the type of transistor that can be used. As examples, transistors having single crystal silicon, or amorphous silicon, polycrystalline silicon, Silicon, microcrystalline (also called microcrystalline, nanocrystalline, or semi-amorphous) A transistor having a non-single-crystal semiconductor film, such as a capacitor, can be used. Alternatively, thin film transistors (TFTs) made from these semiconductors can be used. There are various advantages to using TFTs. For example, it is This allows for lower manufacturing temperatures, reducing manufacturing costs and enabling the use of larger manufacturing equipment. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Since a large number of display devices can be manufactured, the manufacturing cost can be reduced. Therefore, a substrate with low heat resistance can be used. Alternatively, a display element can be manufactured using a transistor on a light-transmitting substrate. The thin film of the transistor allows the light transmission to be controlled. A part of the film that forms the star can transmit light, which improves the aperture ratio. It is possible.

[0331] In addition, when producing polycrystalline silicon, by using a catalyst (such as nickel), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit), the source driver circuit (signal line driver circuit) ), and signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) on the board It can be integrally formed.

[0332] In addition, when manufacturing microcrystalline silicon, by using a catalyst (nickel, etc.), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and gate The gate driver circuit (scanning line driving circuit) can be formed integrally on the substrate. Therefore, if laser irradiation is not performed, unevenness in the crystallinity of silicon can be suppressed. Therefore, it is possible to display images with improved quality. However, the catalyst (nickel, etc.) It is possible to produce polycrystalline or microcrystalline silicon without using a silicon dioxide.

[0333] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline can improve the overall panel performance. It is desirable to perform this in a partial area of ​​the panel, but it is not limited to this. The crystallinity of the crystalline silicon may be improved. For example, the peripheral circuit area, which is an area other than the pixel area, can be selectively irradiated. only in the area of ​​the gate driver circuit and the source driver circuit, or only in the area of ​​the source driver circuit, etc. Even if the laser light is irradiated only on a part of the driver circuit (for example, an analog switch), As a result, silicon crystallization is enhanced only in areas where high-speed circuit operation is required. The pixel area does not need to operate at high speed, so the crystallinity can be improved. Even if the pixel circuit is not connected, it can still operate without any problems. Since the region where crystallinity needs to be improved is small, the manufacturing process can be shortened. This can improve throughput and reduce manufacturing costs. Since fewer manufacturing devices are required, manufacturing costs can be reduced.

[0334] An example of a transistor is a compound semiconductor (e.g., SiGe, GaAs, etc.). ), or oxide semiconductors (e.g., ZnO, InGaZnO, IZO (indium zinc oxide) materials), ITO (indium tin oxide), SnO, TiO, AlZnSnO (AZTO), A transistor having an ITZO (In-Sn-Zn-O) or the like can be used. Alternatively, thin film transistors made of these compound semiconductors or oxide semiconductors are used. These can lower the manufacturing temperature, so for example As a result, it is possible to manufacture transistors at room temperature. For example, a transistor can be formed directly on a plastic substrate or a film substrate. These compound semiconductors or oxide semiconductors are used in the channel portion of a transistor. For example, these compound semiconductors or The oxide semiconductor can be used as a wiring, a resistor, a pixel electrode, a light-transmitting electrode, or the like. Since they can be deposited or formed simultaneously with the transistor, costs can be reduced. can be reduced.

[0335] An example of a transistor is a transistor formed by an ink-jet method or a printing method. These can be used for manufacturing at room temperature, manufacturing at low vacuum, or can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This allows the transistor layout to be easily changed. Alternatively, it can be manufactured without using resist, which reduces material costs and the number of processes. Or, since it is possible to apply the film only to the necessary parts, it is possible to apply the film only to the necessary parts after forming the film on the entire surface. This method wastes less material and is less costly than etching.

[0336] An example of a transistor is a transistor having an organic semiconductor or a carbon nanotube. This allows transistors to be mounted on a flexible substrate. Transistors using organic semiconductors and carbon nanotubes can be formed. The device using this can be made shock resistant.

[0337] Note that transistors with various other structures can also be used. For example, transistors include MOS transistors, junction transistors, and bipolar transistors. A MOS transistor can be used as the transistor. By using this, the size of the transistor can be reduced. It is possible to mount a bipolar transistor as a transistor. This allows a large current to flow, making it possible to operate the circuit at high speed. It is also possible to combine MOS transistors and bipolar transistors on the same substrate. This makes it possible to achieve low power consumption, miniaturization, high-speed operation, etc. Yes, it is possible.

[0338] For example, in this specification, an example of a transistor is a transistor having two or more gate electrodes. A multi-gate structure transistor can be used. Since the channel regions are connected in series, multiple transistors are connected in series. Therefore, the multi-gate structure reduces the off-current and improves the breakdown voltage of the transistor (reliability). Or, by using a multi-gate structure, it is possible to improve the saturation region. In other words, even if the voltage between the drain and source changes, the current between the drain and source remains constant. The voltage-current characteristic does not change and has a flat slope. By using the voltage-current characteristic, an ideal current source circuit or a circuit with a very high resistance can be constructed. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. It is possible to realize roads, etc.

[0339] An example of a transistor is a transistor having a structure in which gate electrodes are arranged above and below a channel. A transistor with a structure in which gate electrodes are arranged above and below the channel can be applied. By using this structure, the circuit configuration becomes like multiple transistors connected in parallel. This increases the channel area, which can increase the current value. By using a structure in which gate electrodes are placed above and below the Therefore, the S value can be improved.

[0340] An example of a transistor is a transistor in which a gate electrode is disposed above a channel region. a structure in which the gate electrode is located below the channel region, a forward staggered structure, an inverted staggered structure a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or A transistor having a structure in which channel regions are connected in series can be used. There are three types of transistors: planar, FIN, and TRI-GATE. gate type), top gate type, bottom gate type, double gate type (gates above and below the channel) Various configurations are possible, such as a

[0341] An example of a transistor is a transistor having a source electrode or a gate electrode in the channel region (or a part thereof). A transistor with an overlapping drain electrode can be used. By using a structure in which the source electrode and drain electrode overlap the This can prevent unstable operation caused by charge accumulation in a part of the panel region.

[0342] As an example of a transistor, a structure provided with an LDD region can be applied. By providing this, the off-state current can be reduced or the withstand voltage of the transistor can be improved (reliability can be improved). Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source changes, the drain current does not change much and the slope is flat. A stable voltage-current characteristic can be obtained.

[0343] For example, in this specification and the like, it is possible to form transistors using various substrates. The type of substrate is not limited to a specific one. Conductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, Plastic substrates, metal substrates, stainless steel substrates, stainless steel foils Substrate with tungsten foil, tungsten substrate, substrate with tungsten foil, flexible substrate, adhesive Examples include laminated films, paper containing fibrous materials, and base films. Examples include barium borosilicate glass, aluminoborosilicate glass, or soda lime glass. Examples of flexible substrates, laminated films, and base films include glass. Examples include polyethylene terephthalate (PET), polyethylene terephthalate (PE ... Plastics such as polyethylene naphthalate (PEN) and polyethersulfone (PES) For example, synthetic resin such as acrylic resin is used. Examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Examples of the material include polyamide, polyimide, aramid, epoxy, and inorganic vapor deposition. Films or papers, etc. In particular, semiconductor substrates, single crystal substrates, or SOI substrates, etc. By manufacturing transistors using this method, variations in characteristics, size, shape, etc. can be reduced. This allows the manufacture of transistors with low resistance, high current capability, and small size. When a circuit is constructed using such transistors, the power consumption of the circuit can be reduced or the circuit can be highly integrated. This can be achieved.

[0344] Note that a transistor is formed using a certain substrate and then transferred to another substrate. However, the transistor may be disposed on another substrate. As the substrate, in addition to the substrate on which the above-mentioned transistor can be formed, a paper substrate, a cellophane substrate, etc. Aramid film substrate, polyimide film substrate, stone substrate, wood substrate, cloth substrate (Natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or Recycled fibers (including acetate, cupra, rayon, recycled polyester, etc.), leather By using these substrates, transistors with good characteristics can be produced. Formation of transistors with low power consumption, fabrication of durable devices, and heat resistance This allows for a reduction in weight or thickness.

[0345] All circuits required to realize a given function are mounted on the same substrate (e.g., glass It can be formed on a substrate such as a silicon substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. This reduces the cost by reducing the number of components, or reduces the number of connections to circuit components. This can improve reliability.

[0346] It is possible that not all of the circuits required to realize a given function are formed on the same substrate. In other words, part of the circuitry required to achieve a given function is formed on a certain substrate. Another part of the circuitry required to achieve a given function is formed on a different substrate. For example, some of the circuits required to realize a specific function can be made of glass. Another part of the circuitry required to realize a given function is formed on the single crystal substrate. (or SOI substrate). The single crystal substrate (also called IC chip) on which another part of the circuit required for the semiconductor device is formed is called COG ( By using the IC chip on glass, the IC is connected to the glass substrate. It is possible to place the chip on the board. Alternatively, the IC chip can be mounted on the board using TAB (Tape Auto) technology. omated Bonding), COF(Chip On Film), SMT(Su Surface Mount Technology, or a printed circuit board, etc. In this way, part of the circuit is formed on the same substrate as the pixel section. This reduces the number of components and the cost, and also reduces the number of connections to the circuit components. This reduces the power consumption and improves reliability. In many cases, circuits with high drive frequencies consume a lot of power. So, such a circuit is formed on a substrate (for example, a single crystal substrate) separate from the pixel section, and By using this IC chip, it is possible to prevent an increase in power consumption. do.

[0347] In addition, regarding the contents not specified in the drawings or text in the specification, Or, for a certain value, it is possible to configure an invention that specifies the upper and lower limits. When a numerical range is stated, such as by narrowing the range arbitrarily, or By excluding one point within the scope, the invention can be defined by excluding part of the scope. These can be used to, for example, define that prior art does not fall within the technical scope of the present invention. This can be done.

[0348] As a specific example, a circuit diagram using first to fifth transistors in a circuit is shown below. In that case, the circuit does not have a sixth transistor. Alternatively, the circuit may be defined as an invention that does not have a capacitance element. Furthermore, it is possible to specify that the circuit has a specific connection structure. The invention can be configured by specifying that the sixth transistor is not included. , the circuit does not have a capacitive element having a specific connection structure. For example, the gate of the third transistor is connected to the gate of the third transistor. Alternatively, the invention may be defined as not having a sixth transistor. For example, a capacitor element having a first electrode connected to the gate of a third transistor may be used. It is possible to define the invention as not being

[0349] As another example, for a certain value, for example, "a certain voltage is 3V or more and 10V or less." In that case, for example, if a certain voltage is -2V, It is possible to define the invention as follows: It is possible to define the invention as excluding cases where a certain voltage is 13V or higher. For example, the invention may be defined as a voltage between 5V and 8V. For example, the invention can be defined as having a voltage of approximately 9V. For example, the invention is defined as a voltage between 3V and 10V, but excluding the case of 9V. It is also possible.

[0350] As another specific example, regarding a certain value, for example, "a certain voltage is preferably 10V" may be used. In that case, for example, if a certain voltage is between -2V and 1V, Or, for example, the invention can be defined as follows: It is possible to define the invention as excluding cases where the voltage is 13V or higher.

[0351] Another example is when describing the properties of a substance, for example, "a certain film is an insulating film." In that case, it is assumed that the insulating film is an organic insulating film. Alternatively, for example, the insulating film may be an inorganic insulating film. It is possible to define an invention as "except when

[0352] As another example, regarding a certain laminated structure, for example, "a certain film is provided between A and B" In that case, for example, if the film is a laminated film of four or more layers, Or, for example, A and its membrane and It is possible to define the invention as excluding the case where a conductive film is provided between the first and second electrodes.

[0353] The inventions described in this specification can be implemented by various people. However, the implementation may span multiple people. In the case of a receiving system, Company A manufactures and sells the transmitter, and Company B manufactures and sells the receiver. Another example is a light-emitting device having a TFT and a light-emitting element. In this case, the semiconductor device on which the TFT is formed is manufactured and sold by Company A. The company purchases the semiconductor device, deposits a light-emitting element on the semiconductor device, and produces a light-emitting device. There are cases where it means completing something.

[0354] In such a case, the inventor may claim patent infringement against either Company A or Company B. Therefore, if you assert a patent infringement claim against Company A or Company B, It can be determined that one aspect of the invention that can be achieved is clear and described in the present specification, etc. For example, in the case of a transmission / reception system, one aspect of the invention is constituted by only the transmitter. The receiver alone can constitute one aspect of the invention, and the one aspect of the invention is , can be considered to be clear and described in the present specification etc. As another example, In the case of a light-emitting device having a TFT and a light-emitting element, a semiconductor device in which the TFT is formed One embodiment of the present invention can be configured by only a light-emitting device having a TFT and a light-emitting element. These aspects of the invention are clear and can be understood as follows: It can be judged that it is stated in the above.

[0355] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of elements such as capacitors and resistors, the connection destination must be specified. However, a person skilled in the art may be able to compose an aspect of the invention. Even if the destination is not specified, one aspect of the invention can be said to be clear. When the content is described in this specification, etc., one aspect of the invention that does not specify the connection destination is In particular, if the terminals are connected to multiple If such a case is considered, there is no need to limit the connection destination of the terminal to a specific location. Therefore, there are active elements (transistors, diodes, etc.) and passive elements (capacitance elements, resistance elements, etc.) By specifying the connection destinations of only some of the terminals possessed by a device, etc., It may be possible to configure one aspect.

[0356] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art. It may be possible for a person skilled in the art to identify an invention. A person skilled in the art may be able to identify an invention by at least specifying the function. In other words, if the function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in the present specification. Therefore, even if the function of a circuit is not specified, specifying the connection destination can be considered an aspect of an invention. and can constitute one aspect of the invention. Even if the connection destination of a certain circuit is not specified, if the function is specified, it can be considered as one aspect of the invention. What is disclosed can constitute an aspect of the invention.

[0357] In this specification, etc., in a drawing or text that describes one embodiment, It is possible to extract a part of it and use it to constitute an aspect of the invention. If a drawing or text describing a certain part is included, the drawing or text of that part is omitted. The above content is also disclosed as one aspect of the invention and constitutes one aspect of the invention. Therefore, for example, active elements (transistors, diodes) etc.), wiring, passive elements (capacitive elements, resistive elements etc.), conductive layers, insulating layers, semiconductor layers, organic Drawings or drawings showing one or more materials, inorganic materials, parts, devices, operation methods, manufacturing methods, etc. or a sentence, it is possible to extract a part of it and use it as an embodiment of the invention. For example, a circuit having N (N is an integer) circuit elements (transistors, capacitors, etc.) From the circuit diagram configured as such, it is possible to extract M (M is an integer, M < N) circuit elements (transistors, capacitors, etc.) to constitute one aspect of the invention. As another example, from the cross-sectional view configured with N (N is an integer) layers, it is possible to extract M (M is an integer, M < N) layers to constitute one aspect of the invention. As yet another example, from the flowchart configured with N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements to constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0358] In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0359] In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for the figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0360] It should be noted that in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0361] In this specification, the shape of an object may be referred to as, for example, a "diameter," a "particle size," a "size," a "diameter ... When specifying "width" etc., it is the length of one side of the smallest cube that the object can fit into, or the length of the object. The equivalent diameter of a circle in a cross section of an object may be read as the diameter of a circle in a cross section of the object. The diameter of a circle with an area equal to the cross section of the body.

[0362] Even when written as "semiconductor," if the conductivity is sufficiently low, it may be written as "insulator." In addition, the boundary between "semiconductor" and "insulator" is vague, and Therefore, the term "semiconductor" as used herein may be used interchangeably with "insulator." Similarly, the term "insulator" used herein can be interpreted as "semiconductor." " can sometimes be rephrased as ".

[0363] Also, even if a material is written as a "semiconductor," if the material has a sufficiently high conductivity, it may be written as a "conductor." In addition, the boundary between "semiconductor" and "conductor" is vague, and Therefore, the term "semiconductor" as used herein may be used interchangeably with "conductor." Similarly, the term "conductor" used in this specification can be used to refer to a "semiconductor." " can sometimes be rephrased as ".

[0364] The impurities in the semiconductor film refer to, for example, substances other than the main components constituting the semiconductor film. For example, Elements with a concentration of less than 0.1 atomic% are impurities. For example, carrier traps may be formed in the semiconductor film, and carrier mobility may decrease. If the semiconductor film is an oxide semiconductor film, the crystallinity may be reduced. In this case, impurities that change the properties of the semiconductor film include, for example, Group 1 elements, Group 2 elements, There are elements of Group 14, Group 15, transition metals other than the main component, etc., especially, for example, hydrogen ( (Also found in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. In the case of an oxide semiconductor, oxygen vacancies may be formed due to the inclusion of impurities. When the semiconductor film is a silicon film, impurities that change the properties of the semiconductor film include, for example, Examples include oxygen, Group 1 elements excluding hydrogen, Group 2 elements, Group 13 elements, and Group 15 elements. .

[0365] In this specification, the term "excess oxygen" refers to, for example, oxygen contained in excess of the stoichiometric composition. Alternatively, excess oxygen refers to oxygen released by heating, for example. For example, oxygen can move inside the film or layer. The movement of excess oxygen can cause the atoms of the film or layer to move. When oxygen moves between membranes and layers, it moves in a chain reaction, replacing oxygen that makes up the membranes and layers. In addition, an insulating film containing excess oxygen has a function of releasing oxygen by, for example, heat treatment. It is an insulating film with excellent properties.

[0366] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes cases where the angle is between 85° and 95°.

[0367] In the embodiment, the conductive film may be made of, for example, aluminum, titanium, chromium, or cobalt. Nickel, Copper, Yttrium, Zirconium, Molybdenum, Ruthenium, Silver, Tanta A conductive film containing titanium or tungsten may be used as a single layer or a stacked layer. Examples of conductive films having transparency include an In-Zn-W oxide film, an In-Sn oxide film, Oxide films such as In-Zn oxide film, indium oxide film, zinc oxide film and tin oxide film Furthermore, the oxide film described above can be easily formed even if trace amounts of Al, Ga, Sb, F, etc. are added. Also, a thin metal film that transmits light (preferably, 5 nm to 30 nm) For example, a 5 nm thick Ag film, Mg film, or Ag-Mg alloy film can be used. A gold film may be used. Alternatively, a film that efficiently reflects visible light may be, for example, a lithium , containing aluminum, titanium, magnesium, lanthanum, silver, silicon or nickel A membrane may be used.

[0368] The insulating film may be made of, for example, aluminum oxide, magnesium oxide, silicon oxide, Silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide , yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Alternatively, an insulating film containing tantalum oxide may be used as a single layer or a multilayer. Resin films such as imide resin, acrylic resin, epoxy resin, and silicone resin may also be used. do not have.

[0369] In addition, in this specification, when the crystal is a trigonal or rhombohedral crystal, it is expressed as a hexagonal crystal system. .

[0370] In addition, terms such as first, second, and third used in this specification are used interchangeably to avoid confusion of components. It is not intended to limit the number of items. The terms "second" or "third" can be used interchangeably to explain the present invention.

[0371] In this specification, when an etching step is performed after a photolithography step, The mask formed in the photolithography process is removed.

[0372] The transistor further includes a second gate for applying a potential to the back channel. In that case, in order to distinguish between the two gates, The exposed terminal will be called the "front gate" and the other the "back gate."

[0373] Voltage refers to the potential difference between two points, and potential refers to the electrostatic field at a certain point. This refers to the electrostatic energy (electrical potential energy) of a unit charge in a particle. However, in general, the potential difference between the potential at a certain point and a reference potential (for example, ground potential) This is simply called potential or voltage, and potential and voltage are often used synonymously. Therefore, in this specification, unless otherwise specified, the term "potential" may be read as "voltage." , voltage may be read as potential.

[0374] In this specification, a voltage refers to a potential and a reference potential (for example, a ground potential). Therefore, voltage, potential, and potential difference are often referred to as potential, voltage, and This can be rephrased as a voltage difference.

[0375] Generally, potentials and voltages are relative. Therefore, the ground potential is It is not necessarily limited to 0 volts.

[0376] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0377] For example, in this specification, a transistor is defined as a transistor having a gate, a drain, and a source. The element has at least three terminals including a drain (drain terminal, drain drain electrode) and source (source terminal, source region or source electrode) A channel region is provided between the drain and the source, and a current flows through the channel region and the source. Here, the source and drain are the same in structure or operation of the transistor. It is difficult to determine which is the source and which is the drain, as this varies depending on the conditions. Therefore, the part that functions as the source and the part that functions as the drain are In some cases, the source and drain are not called the same. One of the two is referred to as a first terminal, a first electrode, or a first region, and the other of the source and drain is referred to as a first electrode. It may also be referred to as the second terminal, the second electrode, or the second region.

[0378] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected and the case where X and Y are directly connected are both considered to be disclosed in this specification. Here, X and Y are the object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, etc.). , layer, etc.) Therefore, a given connection relationship, for example, The present invention is not limited to the connections shown in the drawings or text, but also includes connections other than those shown in the drawings or text. It shall be as shown in the diagram or text.

[0379] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When no external device (such as a diode, display element, light-emitting element, or load) is connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0380] An example of the case where X and Y are electrically connected is The elements that function as One or more diodes, display elements, light-emitting elements, loads, etc.) are connected between X and Y. The switch has a function to control on / off. A switch can be in a conducting state (ON state) or a non-conducting state (OFF state) and allows current to flow. The switch has the function of controlling whether or not current flows. When X and Y are electrically connected, X This includes the case where Y is directly connected to Y.

[0381] An example of a functional connection between X and Y is a function that allows the functional connection between X and Y. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (voltage power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the signal potential level, etc.) , voltage source, current source, switching circuit, amplifier circuit (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (e.g., memory circuits, control circuits, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X X and Y are said to be functionally connected if X is transmitted to Y.

[0382] If it is explicitly stated that X and Y are electrically connected, When X and Y are electrically connected (i.e., when there is another element or another circuit between X and Y), X and Y are functionally connected (i.e., X and Y are (When X and Y are functionally connected with another circuit between them) and (When X and Y are directly connected) (i.e., when X and Y are connected without any other element or circuit between them) In other words, it is assumed that the above is disclosed in the present specification. If it is explicitly stated that it is connected, The same contents as those in the above case are deemed to be disclosed in the present specification.

[0383] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or (not shown), electrically connected to X, and the drain (or second terminal, etc.) of the transistor is connected to Z 2 (or not), and is electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0384] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor" The terminals of the transistor (or the first terminal) are electrically connected to each other. 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y. It can be expressed as "connected to the source (or the first The first terminal of the transistor is electrically connected to X, and the drain of the transistor is electrically connected to the second terminal of the transistor. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of the transistor. and the drain (or second terminal, etc.) are electrically connected to Y, and X, the source (or first terminal, etc.) of a transistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this order of connection. By specifying the order of connections in the circuit configuration using a simple expression method, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined by the above.

[0385] Alternatively, for example, "the source (or first terminal, etc.) of a transistor" is electrically connected to X through at least a first connection path, and the first connection path is , and the second connection path is a transistor through a transistor. The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the first and second transistors. The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. the third connection path does not have the second connection path, and the third connection path The connection path is the path via Z2. The source (or first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and electrically connected to X, and the first connection path does not have a second connection path; The second connection path has a connection path through a transistor, and (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1. The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , does not have a fourth electrical path, and the fourth electrical path is (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguishing between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0386] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0387] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are different, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film functions as both the wiring and the electrode. Therefore, the electrode in this specification has the functions of both components. The term "electromagnetic connection" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above.

[0388] For example, in this specification, Y is formed on X, or Y is formed on X. When explicitly stating that "Y is formed on X," it means that Y is formed directly on top of X. It is not limited to the case where there is no direct contact, that is, there is another object between X and Y. Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrode, terminal, conductive film, layer, etc.).

[0389] Therefore, for example, it is not possible to explicitly state that layer Y is formed on (or on) layer X. In the cases described, it means that layer Y is formed directly on layer X, and that layer Y is formed on layer X. Another layer (such as layer Z) is formed directly adjacent to it, and layer Y is formed directly on top of it. The other layer (e.g., layer Z) may be a single layer. Alternatively, it may be multi-layered (laminated).

[0390] Furthermore, the same applies to cases where it is explicitly stated that Y is formed above X. It is not limited to Y being directly on top of X, and there is another object between X and Y. For example, if a layer Y is formed above a layer X, In this case, there are two cases: when layer Y is formed directly on top of layer X, and when layer Y is formed directly on top of layer X. Another layer (such as layer Z) is formed on top of it, and layer Y is formed directly on top of it. The other layer (for example, layer Z) may be a single layer or a multi-layer. (Laminated) may also be used.

[0391] In addition, Y is formed on X, Y is formed on X, or Y is formed above X. When explicitly stating that "Y is formed diagonally above X," this also includes the case where Y is formed diagonally above X. do.

[0392] The same applies to the case where there is a Y below an X, or a Y below an X.

[0393] For example, in this specification, "above," "upward," "under," "below," "sideways," etc. "to the right," "to the left," "diagonally," "to the back," "to the front," "inside," "outside," or Spatial location words such as "in" indicate the relationship between one element or feature and another. It is often used to simply show a series of events in a diagram. These spatial orientation terms can include directions in addition to those depicted in the diagram. For example, if it is explicitly stated that Y is above X, it is limited to Y being above X. The device in the diagram can be flipped or rotated 180 degrees so that Y is below X. Thus, the phrase "on" can include the direction of "on." In addition to the above, the direction of "under" can be included. However, it is not limited to this, and the data in the figure Since the vise can be rotated in various directions, the phrase "on" can be used to refer to "on" and In addition to the "down" and "sideways", "right", "left", "diagonally", "backwards", and "hands" directions, Other directions such as "in front of," "into," "outside," or "into" may be included. This means that it can be interpreted appropriately depending on the situation.

[0394] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above. [Explanation of symbols]

[0395] 10 Electron gun room 12 Optical system 14 Sample chamber 16 Optical system 18 Camera 20 Observation Room 22 Film Room 24 electronic 28 Substance 32 Fluorescent screen 101 Electronic equipment 101A Electronic equipment 102 Display device 102A Display device 102B Display device 103 Camera Club 104 areas 105 Subject 106 areas 106A area 106B area 107A illumination light 107B Reflected Light 107C illumination light 107D Illumination Light 108A Slider 108AA button 108B Blue slider 108BA Blue button 108C Green Slider 108CA Green Button 108D Red slider 108DA Red Button 109 areas 110 Caller 111 Contact objects 112A Icon 112B Icon 112C Icon 112D Icon 113 Lighting components 114 Buttons 115A Icon 115B Icon 116 Network 117 Server 118 Computer 130 steps 131 steps 132 steps 133 steps 134 steps 135 steps 136 steps 137 steps 201 CPU 203 Storage device 205 Storage device 207 Controller 209 Display device 211 external port 213 Network Control Unit 215 Antenna 217 Camera Club 300 touch panel 301 Display section 302 pixels 302B subpixel 302G subpixel 302R subpixel 302t transistor 303c capacity 303g(1) Scanning line driver circuit 303g(2) Imaging pixel drive circuit 303s(1) Image signal line driver circuit 303s(2) Image signal line driver circuit 303t transistor 308 imaging pixels 308p photoelectric conversion element 308t transistor 309 FPC 310 Substrate 310a Barrier film 310b board 310c adhesive layer 311 Wiring 319 terminal 321 Insulating Film 328 Bulkhead 329 Spacer 350R light emitting element 351R lower electrode 352 Upper electrode 353 layers 353a Light Emitting Unit 353b Lighting unit 354 Middle Class 360 Encapsulating material 367BM light shielding layer 367p anti-reflection layer 367R colored layer 370 Opposing substrate 370a Barrier film 370b board 370c adhesive layer 380B Light Emitting Module 380G light emitting module 380R Light Emitting Module 400 boards 401 Pixel section 402 Scanning line driving circuit 403 Scanning line driving circuit 404 Signal line driver circuit 410 Capacitance wiring 412 Gate wiring 413 Gate wiring 414 Drain electrode layer 416 Transistor 417 Transistor 418 Liquid Crystal Device 419 Liquid Crystal Devices 420 pixels 421 Switching Transistor 422 Drive transistor 423 Capacitor 424 Light-emitting element 425 signal line 426 scan lines 427 Power line 428 Common electrode 500 touch panel 500B Touch Panel 501 Display section 502R subpixel 502t transistor 503c capacity 503g Scanning line driver circuit 503t transistor 509 FPC 510 board 510a Barrier film 510b board 510c adhesive layer 511 Wiring 519 terminal 521 Insulating film 528 Bulkhead 550R light emitting element 560 Encapsulating material 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 PCB 570a Barrier film 570b board 570c ​​adhesive layer 580R Light Emitting Module 590 PCB 591 Electrode 592 Electrode 593 Insulating Layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connection Layer 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8007 Backlight Unit 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. An electronic device having a first display area and a first housing, the first housing has a camera and an LED light located near the camera; the first display area overlaps with the first housing; the first display area has a first area and a second area, the first area has a function of irradiating a subject with light while at least a part of the display of the second area is maintained; The electronic device has a function in which the first area can be overlapped with a part of the second area by touching and moving the first area with a contact object.

2. An electronic device having a first display area and a first housing, the first housing has a camera and an LED light located near the camera; the first display area overlaps with the first housing; the first display area has a first area and a second area, the first area has a function of applying flash illumination to a subject while at least a part of the display of the second area is maintained; The electronic device has a function in which the first area can be overlapped with a part of the second area by touching and moving the first area with a contact object.

3. In claim 1 or 2, The electronic device wherein the first area is larger than the second area.

Images