Oblique illumination for overlay metrology
The overlay metrology system uses oblique illumination with two diffraction orders to enhance imaging contrast and accuracy for small, high-density features, addressing measurement challenges in overlay metrology.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-04-18
- Publication Date
- 2026-03-11
AI Technical Summary
Overlay metrology systems face challenges in accurately measuring the alignment of small, high-density features due to increased demands on characterization as feature sizes decrease.
An overlay metrology system using oblique illumination with two diffraction orders, specifically the zeroth-order and a single first-order diffraction lobe, to enhance imaging contrast and reduce sensitivity to sample defocus, enabling measurement of finer pitches.
This approach provides high-contrast imaging robust to defocus errors and allows measurement of smaller pitch targets, improving measurement accuracy and relaxes measurement conditions.
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Abstract
Citation Information
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