Indication device

Abstract

To improve the reliability of a light-emitting device.SOLUTION: A light-emitting device has a driving circuit unit including a driving circuit transistor and a pixel unit including a pixel transistor on the same substrate. The driving circuit transistor and the pixel transistor are inverted-staggered transistors including an oxide semiconductor layer partially in contact with an oxide insulating layer. In the pixel unit, a color filter layer and a light-emitting element are provided on the oxide insulating layer. In the driving circuit transistor, a gate electrode layer and a conductive layer overlapping with the oxide semiconductor layer are provided on the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed of a metal conductive film.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention relates to a light-emitting device that uses a layer containing an organic compound as a light-emitting layer and a method for manufacturing the same. This invention relates to an electronic device that incorporates a light-emitting display device having a light-emitting element as a component.

[0002] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This refers to all semiconductor devices, including electro-optical devices such as light-emitting devices, semiconductor circuits, and electronic equipment. be. [Background technology]

[0003] Organic compounds with characteristics such as thinness, light weight, high-speed response, and DC low-voltage drive are used as light-emitting elements. These light-emitting elements are being considered for applications in next-generation flat panel displays and next-generation lighting. In particular, a display device in which light-emitting elements are arranged in a matrix is ​​a conventional liquid crystal display device. Compared to other options, it is considered to have an advantage in its wider field of view and superior visibility.

[0004] The light-emitting mechanism of the light-emitting element works by applying a voltage with an EL layer sandwiched between a pair of electrodes, thereby emitting light to the cathode. Electrons injected from the electrons and holes injected from the anode recombine at the light-emitting center of the EL layer to form molecules. It forms excitons, and when these molecular excitons relax to the ground state, they release energy and emit light. It is said that singlet excitation and triplet excitation are known as excited states, and luminescence occurs in both excitations. It is believed that this is possible even after going through a certain state.

[0005] The EL layer constituting the light-emitting element has at least a light-emitting layer. In addition, the EL layer has other components besides the light-emitting layer. The laminated structure includes a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and so on. It's also possible.

[0006] In addition, metal oxides have attracted attention as materials exhibiting semiconductor characteristics. Metals exhibiting semiconductor characteristics Examples of metal oxides include tungsten oxide, tin oxide, indium oxide, zinc oxide, etc. There are, and thin film transistors having such metal oxides exhibiting semiconductor characteristics as a channel formation region are already known (Patent Document 1 and Patent Document 2).

[0007] Also, TFTs applying oxide semiconductors have high field-effect mobility. Therefore, drive circuits such as display devices can also be configured using such TFTs.

Prior Art Documents

Patent Documents

[0008] <00​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​The operating speed is increased. However, when the channel length is shortened, there is a problem that switching characteristics, for example, the on-off ratio becomes small. Also, when the channel width W is widened, there is a problem of increasing the capacitive load of the thin film transistor itself. In addition, even when the channel length is short, it is also an issue to provide a light-emitting device including a thin film transistor having stable electrical characteristics.

[0013] Also, when forming a plurality of different circuits on an insulating surface, for example, when forming a pixel portion and a driving circuit on the same substrate, the thin film transistor used for the pixel portion is required to have excellent switching characteristics, for example, a large on-off ratio, and the thin film transistor used for the driving circuit is required to have a high operating speed. Particularly, the higher the definition of the display device, the shorter the writing time of the display image, so it is preferable that the thin film transistor used for the driving circuit has a high operating speed.

[0014] In addition, reducing the variation in the electrical characteristics of thin film transistors using an oxide semiconductor film is also one of the problems.

[0015] One form of the light-emitting device of the present invention has a driving circuit portion including a transistor for a driving circuit and a pixel portion including a transistor for a pixel on the same substrate, and the transistor for a driving circuit and the transistor for a pixel have a gate electrode layer, a gate insulating layer on the gate electrode layer, an oxide semiconductor layer on the gate insulating layer, a source electrode layer and a drain electrode layer on the oxide semiconductor layer, and an oxide insulating layer in contact with a part of the oxide semiconductor layer on the oxide semiconductor layer, the source electrode layer and the drain electrode layer.

Means for Solving the Problems

[0016] One form of the light-emitting device of the present invention has a driving circuit portion including a transistor for a driving circuit and a pixel portion including a transistor for a pixel on the same substrate, and the transistor for a driving circuit and the transistor for a pixel have a gate electrode layer, a gate insulating layer on the gate electrode layer, an oxide semiconductor layer on the gate insulating layer, a source electrode layer and a drain electrode layer on the oxide semiconductor layer, and an oxide insulating layer in contact with a part of the oxide semiconductor layer on the oxide semiconductor layer, the source electrode layer and the drain electrode layer. The transistor for a driving circuit and the transistor for a pixel have a gate electrode layer, a gate insulating layer on the gate electrode layer, an oxide semiconductor layer on the gate insulating layer, a source electrode layer and a drain electrode layer on the oxide semiconductor layer, and an oxide insulating layer in contact with a part of the oxide semiconductor layer on the oxide semiconductor layer, the source electrode layer and the drain electrode layer. The transistor for a driving circuit and the transistor for a pixel have a gate electrode layer, a gate insulating layer on the gate electrode layer, an oxide semiconductor layer on the gate insulating layer, a source electrode layer and a drain electrode layer on the oxide semiconductor layer, and an oxide insulating layer in contact with a part of the oxide semiconductor layer on the oxide semiconductor layer, the source electrode layer and the drain electrode layer. In the pixel area, a color filter layer is placed on the oxide insulating layer, and a pixel transistor is placed on the color filter layer. A stack of a first electrode layer, an EL layer, and a second electrode layer is provided, which are electrically connected to the zista, and the drive In a circuit transistor, the gate electrode layer and the oxide semiconductor layer overlap on the oxide insulating layer. A conductive layer is provided, and the gate electrode layer, source electrode layer, and drain electrode layer are made of a metallic conductive film. ru.

[0017] Another embodiment of the light-emitting device of the present invention is a drive circuit including a drive circuit transistor on the same substrate. It has a part and a pixel part including a transistor for the pixel, and a transistor for the drive circuit and a transistor for the pixel The transistor consists of a gate electrode layer, a gate insulating layer on the gate electrode layer, and an oxide layer on the gate insulating layer. A material semiconductor layer, a source electrode layer and a drain electrode layer on an oxide semiconductor layer, and an oxide semiconductor layer The source electrode layer and drain electrode layer have an oxide insulating layer in contact with a portion of the oxide semiconductor layer. Furthermore, in the pixel area, a color filter layer is placed on the oxide insulating layer, and a pixel filter is placed on the color filter layer. A first electrode layer, an EL layer, and a second electrode layer are electrically connected to the transistor via a connecting electrode layer. A stack of these is provided, and in a transistor for a drive circuit, a gate electrode layer and A conductive layer is provided that overlaps with the oxide semiconductor layer, and a gate electrode layer, source electrode layer, and drain are also provided. The electrode layer is a metallic conductive film.

[0018] A bottom-gate inverse staggered type transistor is used for both pixel transistors and drive circuit transistors. Transistors are used. Pixel transistors and drive circuit transistors are located in the source electrode layer. Furthermore, an oxide insulating film is provided in contact with the oxide semiconductor layer exposed between the drain electrode layer and the oxide semiconductor layer. It is a channel-etched transistor.

[0019] The transistor for the drive circuit has a configuration in which an oxide semiconductor layer is sandwiched between a gate electrode and a conductive layer. This reduces the threshold voltage variation of transistors, resulting in a more stable electrical system. A light-emitting device equipped with a transistor having certain characteristics can be provided. The conductive layer is the gate The potential can be the same as the electrode layer, or it can be a floating potential, or it can be a fixed potential, for example, GN D potential or 0V is also acceptable. Furthermore, by applying an arbitrary potential to the conductive layer, the transistor's structure can be modified. The value can be controlled.

[0020] The pixel transistor and pixel electrode may be formed in direct contact, or a connecting electrode layer may be placed between them. They may be electrically connected. The connecting electrode layer may be made of Al, Cr, Cu, Ta, Ti, Mo, A laminated film mainly composed of elements selected from W, or a combination of such alloy films. You can use it.

[0021] The conductive layer provided on the oxide semiconductor layer of the transistor for the drive circuit, the first wiring (terminals) The first wire (also called a connecting electrode), and the second wire (also called a terminal or connecting electrode) are the pixel electrodes. In the same process, indium oxide, indium tin oxide alloy, and indium zinc oxide alloy are produced. Alternatively, it may be formed using an oxide conductive material such as zinc oxide, or in the same process as the connecting electrode layer. A film whose main component is an element selected from Al, Cr, Cu, Ta, Ti, Mo, W, or These may be formed using metallic materials such as alloy films.

[0022] Furthermore, multiple types of light-emitting elements with different emission colors are mounted on the same substrate, and pixels are electrically connected to the light-emitting elements. Transistors can be formed to manufacture light-emitting devices such as display screens.

[0023] Furthermore, multiple light-emitting elements with a white light-emitting color are provided, and the light-emitting areas of each light-emitting element are overlapped. By adding an optical film, specifically a color filter, to create a full-color light-emitting display device... It can also be done this way. Note that here, color filters include black matrices and overcoats. Three color filter layers (red color filter, blue color filter, green color filter) This doesn't refer to the entire film with filters (such as a filter), but rather to a single color filter. It refers to.

[0024] One embodiment of the method for manufacturing the light-emitting device of the present invention to realize the above structure is a drive circuit section and a pixel A gate electrode layer is formed on a substrate having an insulating surface including a portion, using a metal conductive film, and the gate electrode A gate insulating layer is formed on the pole layer, and an oxide semiconductor layer is formed on the gate insulating layer, and an oxide semiconductor After dehydrating or dehydrogenating the body layer, water or water is introduced into the oxide semiconductor layer without exposure to the atmosphere. To prevent the re-incorporation of elements, a metal conductive film is used on the oxide semiconductor layer for the source electrode layer and drain electrode layer. A polar layer is formed, and an oxide semiconductor layer is placed on the oxide semiconductor layer, source electrode layer and drain electrode layer. A part of the drive circuit section is in contact with an oxide insulating layer, and the drive circuit transistor and pixel are placed in the drive circuit section. A pixel transistor is formed in the part, and a color filter layer is formed on the oxide insulating layer in the pixel part. A first electrode layer is formed on the color filter layer, which is electrically connected to the pixel transistor. In the drive circuit section, an EL layer is formed on the first electrode layer, and a second electrode layer is formed on the EL layer. On the oxide insulating layer that overlaps with the gate electrode layer and oxide semiconductor layer of the drive circuit transistor Then, a conductive layer is formed using the same process as the first electrode layer.

[0025] One embodiment of the method for manufacturing the light-emitting device of the present invention to realize the above structure is a drive circuit section and a pixel A gate electrode layer is formed on a substrate having an insulating surface including a portion, using a metal conductive film, and the gate electrode A gate insulating layer is formed on the pole layer, and an oxide semiconductor layer is formed on the gate insulating layer, and an oxide semiconductor After dehydrating or dehydrogenating the body layer, water or water is introduced into the oxide semiconductor layer without exposure to the atmosphere. To prevent the re-incorporation of elements, a metal conductive film is used on the oxide semiconductor layer for the source electrode layer and drain electrode layer. A polar layer is formed, and an oxide semiconductor layer is placed on the oxide semiconductor layer, source electrode layer and drain electrode layer. A part of the drive circuit section is in contact with an oxide insulating layer, and the drive circuit transistor and pixel are placed in the drive circuit section. A pixel transistor is formed in the part, and a color filter layer is formed on the oxide insulating layer in the pixel part. Formed, and electrically connected to the color filter layer via a pixel transistor and connecting electrode layer. A first electrode layer is formed, an EL layer is formed on the first electrode layer, and a second electrode layer is formed on the EL layer. In the drive circuit section, the gate electrode layer and oxide semiconductor layer of the drive circuit transistor overlap A conductive layer is formed on the oxide insulating layer using the same process as the connecting electrode layer.

[0026] Furthermore, in the photolithography process in the manufacturing process of the aforementioned light-emitting device, the transmitted light Using a mask layer formed by a multi-gradation mask, which is an exposure mask with multiple intensities An etching process may be performed.

[0027] A mask layer formed using a multi-gradation mask has a shape with multiple film thicknesses, and the mask layer By etching, the shape can be further deformed, allowing for different patterns. It can be used in multiple etching processes. Therefore, a single multi-gradation mask can be used. This allows for the formation of mask layers that correspond to at least two different patterns. Therefore, the number of exposure masks can be reduced, and the corresponding photolithography process can also be reduced. This allows for a simplification of the process.

[0028] The above configuration solves at least one of the above problems.

[0029] Furthermore, the oxide semiconductor used in this specification is InMO3(ZnO) m (m>0) A thin film is formed, and a thin-film transistor is fabricated using this thin film as an oxide semiconductor layer. M is one or more metallic elements selected from Ga, Fe, Ni, Mn, and Co. This indicates a metallic element. For example, M can be Ga, or Ga and Ni, or Ga and In addition, the above oxide semiconductor may contain metal elements other than Ga, such as Fe. In addition to the metallic elements included as M, Fe, Ni, and other transition metals are included as impurity elements. Some contain elements or oxides of the transition metal. In this specification, In MO3(ZnO) m Among oxide semiconductor layers with a structure represented by (m>0), where M is Ga Oxide semiconductors with a structure containing are called In-Ga-Zn-O based oxide semiconductors, and their thin films are called I It is also called an n-Ga-Zn-O non-single crystal film.

[0030] In addition to the above, other metal oxides that can be applied to oxide semiconductor layers include In-Sn-Zn-O In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn -Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In- O-based, Sn-O-based, and Zn-O-based metal oxides can be applied. Silicon oxide may be included in the oxide semiconductor layer made of the material.

[0031] Heat treatment is performed under an inert gas atmosphere of nitrogen or a noble gas (argon, helium, etc.). In this case, the oxide semiconductor layer becomes oxygen-deficient due to the heat treatment, resulting in lower resistance, i.e., N-type ( N - (e.g., chemical treatment), and then the formation of an oxide insulating film in contact with the oxide semiconductor layer, or after formation, By heat treatment, the oxide semiconductor layer is subjected to an oxygen-rich state, thereby increasing its resistance, i.e., I It can also be said that they are being molded. Furthermore, solid-phase oxidation is performed to create an oxygen-rich state in the oxide semiconductor layer. It can also be said that this results in thin-film transistors with good electrical characteristics and high reliability. This makes it possible to manufacture and provide light-emitting devices.

[0032] Dehydration or dehydrogenation is performed using nitrogen or an inert gas such as a noble gas (argon, helium, etc.). Heating treatment at 400°C to 750°C, preferably 425°C to 750°C, under atmospheric conditions. The process is carried out to reduce impurities such as water content in the oxide semiconductor layer. Furthermore, the subsequent water (H2 This can prevent re-impregnation of O).

[0033] Dehydration or dehydrogenation heat treatment should be carried out in a nitrogen atmosphere with H2O at 20 ppm or less. This is preferable. Alternatively, the procedure may be carried out in ultra-dry air with an H2O concentration of 20 ppm or less.

[0034] The oxide semiconductor layer that has undergone dehydration or dehydrogenation is the oxide semiconductor layer after dehydration or dehydrogenation. Even when measuring TDS up to 450°C for the body layer, two peaks for water are still visible, at least 300°C. The heat treatment conditions should be such that the single peak appearing around °C is not detectable. Therefore, dehydration Alternatively, for thin-film transistors using a dehydrogenated oxide semiconductor layer, TDS is 4 Even when measurements are taken up to 50°C, the water peak that typically appears around 300°C is not detected.

[0035] Then, from the heating temperature T at which dehydration or dehydrogenation is performed on the oxide semiconductor layer, to the dehydration process Alternatively, in the same reactor where dehydrogenation was performed, water or hydrogen is reintroduced without exposure to the atmosphere. It is important that it is not present. Dehydration or dehydrogenation is performed to reduce the resistance of the oxide semiconductor layer, i.e. N-type (N - After (etc.), a thin film is created using an oxide semiconductor layer that has been made highly resistive and type I. When a transistor is fabricated, the threshold voltage (Vth) of the thin-film transistor is made positive. This makes it possible to realize a so-called normally-off switching element. In semiconductors, a channel is formed with a positive threshold voltage as close as possible to 0V. This is desirable for the device (light-emitting device). Furthermore, the threshold voltage of the thin-film transistor is negative. This means that even with a gate voltage of 0V, current flows between the source and drain electrodes, a so-called normal current flow. It is prone to becoming a leon. In active matrix type display devices, the circuit is configured The electrical characteristics of thin-film transistors are crucial, as these characteristics determine the performance of the display device. In particular, the threshold voltage is an important electrical characteristic of thin-film transistors. (Field-effect mobility) Even if the threshold voltage is high, if the threshold voltage is also high, or if the threshold voltage is negative, the circuit will It is difficult to control. The threshold voltage value is high and the absolute value of the threshold voltage is large. In the case of film transistors, when the driving voltage is low, they do not function as a TFT switching device. This may not be possible and could become a burden. In the case of an n-channel thin-film transistor, A channel is formed only when a positive voltage is applied to the gate voltage, and drain current flows out. A transistor is preferable. Transistors that do not form a channel unless the drive voltage is high are desirable. In transistors, a channel is formed and drain current flows even in a negative voltage state. It is unsuitable as a thin-film transistor for use in circuits.

[0036] Furthermore, the gas atmosphere used to lower the temperature from heating temperature T is different from the gas atmosphere used to raise the temperature to heating temperature T. The atmosphere may be switched to a gaseous atmosphere. For example, in the same furnace where dehydration or dehydrogenation has been performed, the atmosphere may be switched to air. Without contact, high-purity oxygen gas or N2O gas, or ultra-dry air (with a dew point) is passed through the furnace. Cooling is performed by filling the container with water at -40°C or below, preferably -60°C or below.

[0037] After reducing the moisture content in the membrane by heat treatment that involves dehydration or dehydrogenation, the moisture content is reduced. Slow cooling (or cooling) in an atmosphere where there is no dew (dew point of -40°C or lower, preferably -60°C or lower). Using the oxide semiconductor film, the electrical characteristics of thin-film transistors are improved, and mass production is also possible. To realize thin-film transistors that possess both low performance and high efficiency.

[0038] In this specification, under an inert gas atmosphere of nitrogen or a noble gas (argon, helium, etc.) The heat treatment is referred to as a heat treatment for dehydration or dehydrogenation. In this specification, this heat treatment Dehydrogenation is not simply defined as the process of removing H2 through scientific means, but rather as H For convenience, this process, including the removal of OH groups, will be referred to as dehydration or dehydrogenation.

[0039] Heat treatment is performed under an inert gas atmosphere of nitrogen or a noble gas (argon, helium, etc.). In this case, the oxide semiconductor layer becomes oxygen-deficient due to the heat treatment, resulting in lower resistance, i.e., N-type ( N - To cause (such as) transformation.

[0040] In addition, a high-resistance drain region (also referred to as an HRD (High Resistance Drain) region) that is oxygen-deficient and overlaps with the drain electrode layer is formed. Also, a high-resistance source region (also referred to as an HRS (High Resistance e Source) region) that is oxygen-deficient and overlaps with the source electrode layer is formed.

[0041] Specifically, the carrier concentration of the high-resistance drain region is in the range of 1×10 18 / cm 3 or higher, and is higher than at least the carrier concentration (less than 1×10 / cm 18 / cm 3 in the channel formation region). Note that the carrier concentration in this specification refers to the value of the carrier concentration obtained from Hall effect measurement at room temperature. After that, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer is made into an oxygen-excessive state, thereby increasing the resistance, i.e., making it into a type-I state, to form a channel formation region. Note that the treatment of making a part of the dehydrated or dehydrogenated oxide semiconductor layer into an oxygen-excessive state is performed by any of the following methods. A sputtering method is used to form an oxide insulating film in contact with the dehydrated or dehydrogenated oxide semiconductor layer, or an oxide insulating film is formed so as to be in contact with the dehydrated or dehydrogenated oxide semiconductor layer, and then a heat treatment is performed, or an oxide insulating film is formed so as to be in contact with the dehydrated or dehydrogenated oxide semiconductor layer, and then a heat treatment is performed in an atmosphere containing oxygen, or an oxide insulating film is formed so as to be in contact with the dehydrated or dehydrogenated oxide semiconductor layer, and then heated in an inert gas atmosphere, and further a cooling treatment is performed in an oxygen atmosphere, or an oxide insulating film is formed so as to be in contact with the dehydrated or dehydrogenated oxide semiconductor layer

[0042] ​​​​​​​​​​​ After that, it is heated under an inert gas atmosphere, and then further heated with ultra-dry air (dew point below -40°C, preferably...) Cooling treatment is performed at temperatures below -60°C.

[0043] Furthermore, at least a portion of the dehydrated or dehydrogenated oxide semiconductor layer (overlapping with the gate electrode layer) By selectively creating an oxygen-rich state in the (part) to form a channel-forming region, high resistance is achieved. It can also be converted to type I. It is in contact with a dehydrated or dehydrogenated oxide semiconductor layer. Then, a source electrode layer and a drain electrode layer made of metal electrodes such as Ti are formed, and the source electrode layer The exposed region that does not overlap with the drain electrode layer is selectively treated as an oxygen-rich state to form a channel. This can be formed. When selectively creating an oxygen-rich state, the second layer overlaps the source electrode layer. A first high-resistance source region and a second high-resistance drain region overlapping the drain electrode layer are formed. Therefore, the region between the first high-resistance source region and the second high-resistance drain region is a channel-forming region. This becomes a region. That is, the channel-forming region is self-aligned between the source electrode layer and the drain electrode layer. It is formed in this way.

[0044] This allows us to fabricate a light-emitting device with thin-film transistors that have good electrical characteristics and high reliability. This will make it possible to provide it.

[0045] Furthermore, a high-resistance drain region is formed in the oxide semiconductor layer superimposed on the drain electrode layer. This improves the reliability of the drive circuit when it is formed. Specifically, By forming a resistive drain region, a high-resistance drain region and a channel are created from the drain electrode layer. It is possible to create a structure in which the conductivity can be changed in stages across the formation region. Therefore, when operating by connecting to wiring that supplies a high power potential VDD to the drain electrode layer, Even when a high electric field is applied between the drain electrode layer and the drain electrode layer, the high-resistance drain region buffs This configuration prevents the application of a localized high electric field, thereby improving the breakdown voltage of the thin-film transistor. It is possible.

[0046] Furthermore, in the oxide semiconductor layer superimposed on the drain electrode layer and the source electrode layer, a high-resistance drain By forming an in region and a high-resistance source region, the channel is formed when a drive circuit is created. This can reduce leakage current in the formed region. Specifically, the high-resistance drain region By forming this, the leakage current of the transistor that flows between the drain electrode layer and the source electrode layer The flow path consists of a drain electrode layer, a high-resistance drain region on the drain electrode layer side, and a channel shape. The order is the formed region, the high-resistance source region on the source electrode layer side, and the source electrode layer. At this time, the channel In the channel formation region, the channel flows from the high-resistance drain region on the drain electrode layer side to the channel region. The current is drawn at the interface between the gate insulating layer and the channel formation region, which have high resistance when the transistor is off. It can be concentrated in the vicinity, and the back channel (channels that are far from the gate electrode layer) This can reduce leakage current in a portion of the surface of the formed region.

[0047] Furthermore, there is a high-resistance source region that overlaps the source electrode layer and a high-resistance drain region that overlaps the drain electrode layer. The region depends on the width of the gate electrode layer, but it overlaps with a part of the gate electrode layer and the gate insulating layer. This allows for a more effective reduction of the electric field strength near the edges of the drain electrode layer.

[0048] Furthermore, even if an oxide conductive layer is formed between the oxide semiconductor layer and the source and drain electrodes... Good. The oxide conductive layer preferably contains zinc oxide as a component, and preferably contains indium oxide. It is preferable that it does not contain zinc oxide, aluminum zinc oxide, or oxynitride. Lead-aluminum, zinc-gallium oxide, etc., can be used. The oxide conductive layer has low resistance. Drain region (LRN (Low Resistance N-type conduction) Also called the ivity region or LRD (Low Resistance Drain) region. It also functions as a carrier concentration in the low-resistance drain region, Larger than the HRD region, for example, 1 × 10 20 / cm 3 The above 1 x 10 21 / c m 3 Preferably, the oxide conductive layer is within the following range: the oxide semiconductor layer and the source electrode and By placing it between the rain electrodes, contact resistance can be reduced, enabling high-speed operation of the transistor. This allows for an improvement in the frequency characteristics of the surrounding circuits (drive circuits).

[0049] The oxide conductive layer and the metal layers for forming the source and drain electrodes can be deposited continuously. That is the case.

[0050] Furthermore, the aforementioned first and second wirings are oxidized to function as LRN or LRD. A laminated wiring harness may be constructed using the same material as the material conductive layer and a metallic material. By laminating conductive layers, coverage against uneven surfaces such as overlapping wiring and openings is improved. This can reduce wiring resistance. Also, localized wiring due to migration etc. Because it can also be expected to have the effect of increasing resistance and preventing wire breakage, it is possible to provide a highly reliable light-emitting device. Cut.

[0051] Furthermore, when connecting the first and second wirings as described above, an oxide conductive layer is placed in between. By continuing, an insulating oxide is formed on the metal surface of the connection (contact) part. This is expected to prevent an increase in contact resistance and make the light-emitting device more reliable. We can provide this.

[0052] Furthermore, thin-film transistors are susceptible to damage from static electricity, so the gate wire or source wire may be damaged. For each line, a protection circuit for protecting the thin-film transistors in the pixel area is provided on the same substrate. Preferably, the protection circuit is constructed using a nonlinear element with an oxide semiconductor layer. It's nice.

[0053] The ordinal numbers "1st" and "2nd" are used for convenience only and do not represent the order of processes or stacking. This does not indicate that the invention is uniquely named. This does not indicate anything. [Effects of the Invention]

[0054] A semiconductor device that uses an oxide semiconductor layer and features a thin-film transistor with excellent electrical properties and reliability. This makes it possible to realize a light-emitting device. [Brief explanation of the drawing]

[0055] [Figure 1] A diagram illustrating a light-emitting device. [Figure 2] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 3] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 4] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 5] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 6] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 7] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 8] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 9] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 10] A diagram illustrating a light-emitting device. [Figure 11] A diagram illustrating a light-emitting device. [Figure 12] A diagram illustrating the block diagram of a light-emitting device. [Figure 13] A diagram illustrating the configuration of a signal line drive circuit. [Figure 14] A circuit diagram showing the configuration of a shift register. [Figure 15] A timing chart illustrating the circuit diagram and operation of a shift register. [Figure 16] A diagram illustrating a light-emitting device. [Figure 17] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 18] A diagram illustrating the method for manufacturing a light-emitting device. [Figure 19] Diagram illustrating the pixel equivalent circuit of a light-emitting device. [Figure 20] A diagram illustrating a light-emitting device. [Figure 21] A diagram illustrating a light-emitting element. [Figure 22] A diagram illustrating a light-emitting device. [Figure 23] A diagram showing electronic equipment. [Figure 24] A diagram showing electronic equipment. [Figure 25] A diagram showing electronic equipment. [Figure 26] A diagram showing electronic equipment. [Modes for carrying out the invention]

[0056] The embodiments will be described in detail with reference to the drawings. However, the following description is not limited to the present invention. The form and details can be changed in various ways without departing from the gist and scope thereof, as is the case for those skilled in the art. Therefore, it is easy to understand. Accordingly, the description of the embodiment shown below should be interpreted as being limited to the following. It is not the case that... The same reference numeral is used consistently across different drawings for parts that are repeated, and explanations of their repetition are omitted.

[0057] (Embodiment 1) Figures 1 to 5 and 11 illustrate the light-emitting device including a thin-film transistor and its manufacturing process. We will explain using this method.

[0058] Figure 1 shows a light-emitting device that is one embodiment of the present invention. The light-emitting device in Figure 1 emits light on a substrate 100. A pixel section including an element, a thin-film transistor 170 and a capacitor 147, and a thin-film transistor 180 A drive circuit section including the gate wiring terminal section is provided, and the gate wiring terminal section has a first terminal 121 , connecting electrode 120, and terminal electrode 128 for connection, and a second terminal 1 at the terminal portion of the source wiring 22 and terminal electrodes 129 for connection are provided. Also, thin-film transistor 180 and An oxide insulating film 107 and a protective insulating layer 106 are formed on the thin-film transistor 170. ru.

[0059] The light-emitting element is formed by stacking a first electrode layer 110, an EL layer 194, and a second electrode layer 195. The structure is configured such that the drain electrode layer of the thin-film transistor 170 and the first electrode layer 110 are in contact. As it is formed, it is electrically connected to the thin-film transistor 170. In the pixel area, A color filter layer 191 is formed on the protective insulating layer 106, and the color filter layer 191 is It is covered with an overcoat layer 192 and further covered with a protective insulating layer 109. The electrode layer 110 is formed on the protective insulating layer 109. Also, partitions separate each light-emitting element. 193 is formed on the thin-film transistor 170.

[0060] In the drive circuit section, the thin-film transistor 180 has a conductive layer above the gate electrode layer and the semiconductor layer. A conductive layer 111 is provided, and the drain electrode layer 165b is formed in the same process as the gate electrode layer. It is electrically connected to layer 162.

[0061] The fabrication method will be explained in detail below using Figures 2 to 5 and Figure 11. Figures 2 to 5 show light emission. This corresponds to a cross-sectional view of the device.

[0062] After forming a conductive layer over the entire surface of the substrate 100, which is a substrate having an insulating surface, Step 1, a photolithography process, is performed to form a resist mask, and then unwanted material is removed by etching. Remove the portion and wire and electrodes (gate electrode layer 101, gate electrode layer 161, conductive layer 162 A capacitance wiring layer 108 and a first terminal 121 are formed as shown in Figure 2(A). When etching is performed so that a tapered shape is formed at the ends of the electrodes, the coverage of the layered film is improved. This is preferable because it improves the performance. Note that gate electrode layer 101 and gate electrode layer 161 are respectively It is included in the wiring.

[0063] There are no major restrictions on the substrates that can be used for the substrate 100 having an insulating surface, however In addition, it is necessary that it has sufficient heat resistance to withstand subsequent heat treatment. A glass substrate can be used for the substrate 100.

[0064] Furthermore, for glass substrates, if the subsequent heat treatment temperature is high, the strain point will be 730°C or higher. It is best to use the following. Also, for the glass substrate, for example, aluminosilicate glass, Glass materials such as luminoborosilicate glass and bariumborosilicate glass are used. Furthermore, by including more barium oxide (BaO) compared to boric acid, it becomes more practical. Heat-resistant glass can be obtained. Therefore, a glass substrate containing more BaO than B2O3 is used. This is preferable.

[0065] In addition, ceramic substrates, quartz substrates, sapphire substrates, etc. can be used instead of the glass substrates mentioned above. A substrate made of edge material may also be used. Other materials such as crystallized glass can also be used. The light-emitting device shown in the configuration is a bottom-extrusion type that extracts light from the surface on the substrate 100 side, A translucent substrate is used as the substrate 100, but light is emitted from the side opposite to the substrate 100. If it is a top-extrusion type for extraction, a non-transparent metal substrate or the like is used as the substrate 100. That's good too.

[0066] The insulating film that forms the base layer consists of a substrate 100, a gate electrode layer 101, a gate electrode layer 161, and a conductive layer 1 62 may be provided between the capacitive wiring layer 108 and the first terminal 121. The underlayer is a substrate It has the function of preventing the diffusion of impurity elements from 100, and silicon nitride film, silicon oxide film, acid nitride It is formed by a laminated structure consisting of one or more films selected from silicon dioxide films or silicon oxide nitride films. It is possible.

[0067] Gate gate layer 101, gate gate layer 161, conductive layer 162, capacitive wiring layer 108, and 1 The materials for terminal 121 are molybdenum, titanium, chromium, tantalum, tungsten, and aluminum. Metal materials such as nium, copper, neodymium, scandium, or alloy materials mainly composed of these materials It can be used to form a single layer or a laminated structure.

[0068] For example, gate electrode layer 101, gate electrode layer 161, conductive layer 162, capacitive wiring layer 108, The two-layer laminated structure of the first terminal 121 is such that a molybdenum layer is stacked on top of an aluminum layer. A layered two-layer laminated structure, or a two-layer structure with a molybdenum layer laminated on a copper layer, or a copper layer A two-layer structure with a titanium nitride layer or tantalum nitride layer laminated on top, and a titanium nitride layer and molybdenum A two-layer structure with layers stacked is preferable. As for a three-layer stacked structure, tungsten A layer or tungsten nitride and an alloy of aluminum and silicon or aluminum and titanium It is preferable to have a laminated structure in which an alloy and a titanium nitride or titanium layer are stacked.

[0069] So, gate electrode layer 101, gate electrode layer 161, conductive layer 162, capacitive wiring layer 108, A gate insulating layer 102 is formed on the first terminal 121 (see Figure 2(A)).

[0070] The gate insulating layer 102 is formed by a silicon oxide layer using plasma CVD or sputtering. , a silicon nitride layer, a silicon oxide nitride layer, a silicon oxide nitride layer, or an aluminum oxide layer as a single layer or It can be formed by stacking. For example, SiH4, oxygen, and nitrogen can be used as the film-forming gas. Then, a silicon oxide nitride layer can be formed by plasma CVD. The thickness shall be between 100 nm and 500 nm, and in the case of lamination, for example, the film thickness shall be 50 nm or more. A first gate insulating layer with a thickness of 00 nm or less, and a layer with a film thickness of 5 nm or more and 300 nm on the first gate insulating layer. The second gate insulating layer is laminated with a length of m or less.

[0071] In this embodiment, the gate insulating layer 102 is made to a thickness of 200 nm or less by plasma CVD. It forms the silicon nitride layer below.

[0072] Next, an oxide semiconductor film 13 with a thickness of 2 nm to 200 nm is placed on the gate insulating layer 102. It forms 0 (see Figure 2(B)).

[0073] Furthermore, before depositing the oxide semiconductor film by sputtering, argon gas is introduced. Reverse sputtering is performed to generate plasma, and the material is deposited on the surface of the gate insulating layer 102. It is preferable to remove any debris. Reverse sputtering is a process where the substrate side is subjected to an argon atmosphere. This method involves applying a voltage using an RF power supply to form plasma near the substrate and modify the surface. Nitrogen, helium, etc. may be used instead of an argon atmosphere. The procedure can also be carried out in an atmosphere with added oxygen, N2O, etc. Alternatively, in an argon atmosphere with Cl 2. You can also proceed with the addition of CF4, etc.

[0074] Even if heat treatment for dehydration or dehydrogenation is performed after the formation of the oxide semiconductor film 130, oxidation does not occur. To make the semiconductor film amorphous, it is preferable to make the film thickness 50 nm or less. By reducing the thickness of the oxide semiconductor film, when the oxide semiconductor layer is heat-treated after formation, It can suppress crystallization.

[0075] The oxide semiconductor film 130 is an In-Ga-Zn-O non-single crystal film, an In-Sn-Zn-O system In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn- Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In-O In this embodiment, In-Ga -The film is deposited by sputtering using a Zn-O-based oxide semiconductor target. The oxide semiconductor film 130 is subjected to a rare gas (typically argon) atmosphere, an oxygen atmosphere, or Formed by sputtering under a noble gas (typically argon) and oxygen atmosphere. This is possible. Also, when using the sputtering method, SiO2 must be 2% by weight or more (10 times). Film deposition is performed using a target containing less than % of the substance, inhibiting crystallization in the oxide semiconductor film 130. By adding SiOx (x>0), the heat treatment for dehydration or dehydrogenation to be performed in a later step It is preferable to suppress crystallization during this process.

[0076] Here, an oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2O 3:ZnO=1:1:1[mol%], In:Ga:Zn=1:1:0.5[at%]) Using this method, the distance between the substrate and the target is 100 mm, the pressure is 0.2 Pa, and the current is DC. Power supply 0.5kW, argon and oxygen (argon:oxygen = 30 sccm:20 sccm, acid The film is deposited in an atmosphere with a raw flow rate ratio of 40%. Note that if a pulsed DC power supply is used, This is preferable because it reduces distortion and results in a uniform film thickness distribution. In-Ga-Zn-O non-single crystal The film thickness shall be between 5 nm and 200 nm. In this embodiment, an oxide semiconductor film is used. Then, a film is formed by sputtering using an In-Ga-Zn-O oxide semiconductor target. A 20 nm thick In-Ga-Zn-O non-single crystal film is deposited.

[0077] The sputtering method includes RF sputtering, which uses a high-frequency power supply for sputtering. Then there is the DC sputtering method, and furthermore, pulsed DC sputtering, which applies a pulsed bias. There is also the sputtering method. RF sputtering is mainly used when depositing insulating films, DC Sputtering is primarily used for depositing metal films.

[0078] There are also multi-target sputtering systems that can set up multiple targets made of different materials. The puttering apparatus can also deposit multiple layers of different material films in the same chamber, or in the same chamber. It is also possible to deposit films by simultaneously discharging multiple types of materials using a burr.

[0079] Furthermore, sputtering using a magnetron sputtering method that incorporates a magnetic mechanism inside the chamber... E There are sputtering machines that use the CR sputtering method.

[0080] Furthermore, as a film deposition method using the sputtering method, the target material and sputtering during film deposition... Reactive sputtering involves chemically reacting gas components to form thin films of those compounds. There are also methods such as the sputtering method and the bias sputtering method, which applies voltage to the substrate during film deposition.

[0081] Next, a second photolithography process is performed on the oxide semiconductor film 130 to create a resist mask. Forming 137, and etching eliminates the need for the oxide semiconductor film 130 and the gate insulating layer 102. Remove the excess portion and create a contact hole in the gate insulating layer 102 that reaches the first terminal 121. 119 and a contact hole 118 that reaches the conductive layer 162 are formed (see Figure 2(C)). ).

[0082] In this way, with the oxide semiconductor film 130 laminated over the entire surface of the gate insulating layer 102, the gate When the process of forming contact holes in the insulating layer 102 is performed, the surface of the gate insulating layer 102 Since the dyst mask does not come into direct contact, contamination of the gate insulating layer 102 surface (adhesion of impurities, etc.) is prevented. This prevents the interface between the gate insulating layer 102 and the oxide semiconductor film 130. This allows for improved performance, leading to increased reliability.

[0083] The contact holes may be opened by directly forming a resist pattern on the gate insulating layer. In that case, after removing the resist, heat treatment is performed to dehydrate the surface of the gate insulating film. Dehydrogenation and dehydration of the oxygen group are preferable treatments. For example, in an inert gas atmosphere (nitrogen, Alternatively, heat treatment (up to 400°C) under an oxygen atmosphere (such as helium, neon, or argon). The process involves heating the gate insulation layer to a temperature of 750°C or lower to remove impurities such as hydrogen and water contained within it. Yes.

[0084] Next, the resist mask 137 is removed, and the oxide semiconductor film 130 is subjected to a third photolithography. Etching is performed using the resist masks 135a and 135b formed by the Fi process, resulting in islands. It forms island-shaped oxide semiconductor layers 131 and 132 (see Figure 3(A)). Resist masks 135a and 135b for forming a material semiconductor layer are shaped by an inkjet method. It may be done. If the resist mask is formed by the inkjet method, a photomask is not used. Therefore, manufacturing costs can be reduced.

[0085] Next, the oxide semiconductor layers 131 and 132 are dehydrated or dehydrogenated. Hydrogenated oxide semiconductor layers 133 and 134 are formed (see Figure 3(B)). Dehydration is performed. The temperature of the first heat treatment for dehydrogenation is 400°C or higher and 750°C or lower, preferably 4 The temperature should be between 25°C and 750°C. If the temperature is above 425°C, the heating time should be 1 hour or less. However, if the temperature is below 425°C, the heat treatment time should be longer than 1 hour. Here, a substrate is introduced into an electric furnace, which is one of the heat treatment devices, and nitrogen is applied to the oxide semiconductor layer. After heat treatment in an ambient atmosphere, water is added to the oxide semiconductor layer without exposure to air. This prevents the re-imposition of hydrogen and obtains oxide semiconductor layers 133 and 134. In this embodiment, oxidation From the heating temperature T used for dehydrating or dehydrogenating the semiconductor layer, a sufficient amount of water is used to prevent water from entering again. The same furnace is used until the temperature drops to a certain point, specifically, under a nitrogen atmosphere until the temperature drops by more than 100°C below the heating temperature T. Slow cooling under gas. Furthermore, it is not limited to a nitrogen atmosphere; dilute gases such as helium, neon, and argon can also be used. Dehydration or dehydrogenation is carried out under a humid atmosphere.

[0086] By heat-treating the oxide semiconductor layer at a temperature of 400°C to 700°C, the oxide semiconductor layer Dehydration and dehydrogenation are achieved, preventing subsequent re-impregnation with water (H2O).

[0087] Furthermore, the heating apparatus is not limited to electric furnaces; for example, GRTA (Gas Rapid Th) thermal annealing) equipment, LRTA (Lamp Rapid Thermal) Using RTA (Rapid Thermal Anneal) devices such as Anneal devices It is possible to use a LRTA device with halogen lamps, metal halide lamps, and xenon lamps. Arc lamps, carbon arc lamps, high-pressure sodium lamps, high-pressure mercury lamps, etc. This device heats the object being processed by radiating light (electromagnetic waves) from a lamp. The TA device utilizes not only lamps but also heat conduction or thermal radiation from heat-generating elements such as resistive heating elements. It may also be equipped with a device to heat the material to be processed. GRTA is a device that uses high-temperature gas to process This is a method of heat treatment. The gas used is a noble gas such as argon, or a gas such as nitrogen, which is heated. An inert gas that does not react with the material being treated is used during the process. Using the RTA method, 600 Heat treatment at 750°C for several minutes may also be performed.

[0088] In the first heat treatment, nitrogen or a noble gas such as helium, neon, or argon is used. Preferably, it does not contain water, hydrogen, etc. In particular, for the oxide semiconductor layer, 400°C Dehydration and dehydrogenation heat treatments performed at ~750°C are carried out under a nitrogen atmosphere with H2O at a concentration of 20 ppm or less. It is preferable to carry out the process in an open atmosphere. Alternatively, nitrogen or helium can be introduced into the heat treatment device. The purity of noble gases such as ion and argon is 6N (99.9999%) or higher, preferably 7N ( 99.99999% or more (i.e., impurity concentration of 1 ppm or less, preferably 0.1 ppm) The following is preferable:

[0089] Furthermore, depending on the conditions of the first heat treatment or the material of the oxide semiconductor layer, crystallization may occur, and microcrystalline formation may occur. It may also be a crystalline film or a polycrystalline film. For example, a crystallinity of 90% or more, or 80% or less. In some cases, the above microcrystalline oxide semiconductor film may form. Also, the conditions of the first heat treatment, or acid Depending on the material of the oxide semiconductor film, it may result in an amorphous oxide semiconductor film that does not contain crystalline components. There are also others.

[0090] Furthermore, the first heat treatment of the oxide semiconductor layer is used to process the island-shaped oxide semiconductor layers 131 and 132. It can also be performed on the oxide semiconductor film 130 before the first heat treatment. In that case, after the first heat treatment The substrate is then removed from the heating device, and the photolithography process is performed.

[0091] Heat treatment for dehydration and dehydrogenation of oxide semiconductor layers is performed after the oxide semiconductor layer is formed. After stacking source electrodes and drain electrodes on a semiconductor layer, the source electrodes and drain electrodes This can be done either after forming a passivation film on top.

[0092] Furthermore, contact holes 118 and 119 are provided in the gate insulating layer 102 as shown in Figure 2(C). The formation process is carried out after the oxide semiconductor film 130 has been subjected to dehydration or dehydrogenation treatment. That's good too.

[0093] Note that the etching of oxide semiconductor films here is not limited to wet etching, but also includes dry etching. Etching may be used.

[0094] Etching gases used in dry etching include chlorine-containing gases (chlorine-based gases, for example) Chlorine (Cl2), boron chloride (BCl3), silicon chloride (SiCl4), carbon tetrachloride (CC) l4) etc.) are preferable.

[0095] Also, fluorine-containing gases (fluorinated gases, such as carbon tetrafluoride (CF4) and sulfur fluoride (SF4)) 6) Nitrogen fluoride (NF3), trifluoromethane (CHF3), etc., hydrogen bromide (HBr ), oxygen (O2), and noble gases such as helium (He) and argon (Ar) are added to these gases. Added gases, etc., can be used.

[0096] As for dry etching methods, parallel plate type RIE (Reactive Ion Etching) Methods such as the ing method and ICP (Inductively Coupled Plasma: induction) A coupled plasma etching method can be used. The desired processing shape can be etched. To that end, etching conditions (amount of power applied to the coil-type electrode, amount of power applied to the electrode on the substrate side) Adjust the amount of power used, the electrode temperature on the substrate, etc., as appropriate.

[0097] The etching solution used for wet etching is a solution of phosphoric acid, acetic acid, and nitric acid, Ammonia hydrochloride (31% hydrogen peroxide by weight: 28% ammonia by weight: water = 5:2:2), etc. This can be used. Alternatively, ITO07N (manufactured by Kanto Chemical Co., Ltd.) may be used.

[0098] Furthermore, the etching solution after wet etching is washed away along with the etched material. The material is removed. The waste etching solution containing the removed material is purified, and the material contained in it is removed. It may be reused. Indium and other elements contained in the oxide semiconductor layer can be extracted from the waste liquid after etching. By recovering and reusing materials, resources can be used effectively and costs can be reduced. .

[0099] Etching conditions (etching) can be adjusted according to the material so that the desired processing shape can be etched. Adjust the solution, etching time, temperature, etc. as appropriate.

[0100] Next, a metallic conductive film made of a metallic material is sputtered onto the oxide semiconductor layers 133 and 134. Formed by methods such as vacuum deposition.

[0101] The material for the metal conductive film was selected from Al, Cr, Cu, Ta, Ti, Mo, and W. Elements, or alloys containing the above-mentioned elements, or alloy films combining the above-mentioned elements, etc. Examples include: Furthermore, the metal conductive film may be a single-layer structure or a multilayer structure of two or more layers. For example, a single-layer structure of an aluminum film containing silicon, or a titanium film laminated on top of an aluminum film. It has a two-layer structure, a Ti film, and an aluminum film stacked on top of the Ti film, and further on top of that Examples include a three-layer structure for depositing a Ti film. Also, Al can be combined with titanium (Ti) and tantalum. (Ta), Tungsten (W), Molybdenum (Mo), Chromium (Cr), Neodymium (Nd ), a film or alloy film made by combining one or more elements selected from scandium (Sc), Alternatively, a nitride film may be used.

[0102] If heat treatment is performed after the metal conductive film is applied, the metal conductive film must have sufficient heat resistance to withstand this heat treatment. It is preferable to do so.

[0103] Next, the fourth photolithography process is performed, and resist masks 136a, 136b, 13 Form 6c, 136d, 136e, 136f, and 136g, and etch the metal conductive film Remove the unnecessary parts to form the source electrode layer 105a, drain electrode layer 105b, and source electrode layer 165a, drain electrode layer 165b, capacitive electrode layer 149, connecting electrode 120, and second end Child 122 is formed (see Figure 3(C)).

[0104] Note that the oxide semiconductor layers 133 and 134 are not removed during the etching of the metal conductive film. Adjust the materials and etching conditions for each component as appropriate.

[0105] In this embodiment, a Ti film is used as the metallic conductive film, and oxide semiconductor layers 133 and 134 are used. This involves etching the oxide semiconductor layers 133 and 134 using an In-Ga-Zn-O based oxide. As a liquid, ammonia water (31% hydrogen peroxide by weight: 28% ammonia water: water = 5%) Use 2:2, etc.

[0106] In this fourth photolithography step, source electrode layers 105a, 165a, and drain The connecting electrode 120 and the second terminal 122 are made of the same material as the electrode layers 105b and 165b. These are formed at the terminal portions. The second terminal 122 is source wiring (source electrode layer 105a It is electrically connected to the source wiring (including 165a). Also, the connecting electrode 120 is connected to It is formed in contact with the first terminal 121 in the tact hole 119 and is electrically connected.

[0107] Furthermore, resist masks 136a and 13 for forming the source electrode layer and drain electrode layer Formed using the inkjet method: 6b, 136c, 136d, 136e, 136f, 136g It is also acceptable. If the resist mask is formed by the inkjet method, a photomask is not used. Therefore, manufacturing costs can be reduced.

[0108] Next, resist masks 136a, 136b, 136c, 136d, 136e, 136f, After removing 136g, an oxide insulating film is formed that will be in contact with the oxide semiconductor layers 133 and 134. A film 107 is formed.

[0109] At this stage, regions are formed in which the oxide semiconductor layers 133 and 134 are in contact with the oxide insulating film. Within this region, the region that overlaps with the oxide insulating film 107 via the gate electrode layer and the gate insulating layer. This becomes the channel-forming region.

[0110] The oxide insulating film 107 has a thickness of at least 1 nm, and is manufactured by an oxidation process such as sputtering. The insulating film 107 can be formed using an appropriate method that prevents the inclusion of impurities such as water and hydrogen. In this embodiment, a silicon oxide film with a thickness of 300 nm is used as the oxide insulating film 107. The film is deposited using the dermatization method. The substrate temperature during film deposition should be between room temperature and 300°C. In this embodiment, the temperature is set to room temperature. The silicon oxide film is deposited by sputtering, and noble gas Under an atmosphere of (typically argon), under an oxygen atmosphere, or under a noble gas (typically argon) It can also be carried out under an oxygen atmosphere. Furthermore, silicon dioxide can be used as the target. A silicon target can be used. For example, using a silicon target, oxygen Silicon oxide can be formed by sputtering under atmospheric conditions. The oxide insulating film formed in contact with the semiconductor layer contains water, hydrogen ions, and OH - impurities such as Using an inorganic insulating film that does not contain any substances and blocks them from entering from the outside, typically This includes silicon oxide films, silicon nitride films, aluminum oxide films, or aluminum oxide nitride films. Use this.

[0111] Next, a second heat treatment (preferably 2) is performed under an inert gas atmosphere or a nitrogen gas atmosphere. Perform the procedure at temperatures between 0°C and 400°C (for example, between 250°C and 350°C). For example, under a nitrogen atmosphere. A second heat treatment is performed at 250°C for 1 hour under gas pressure. After the second heat treatment, the oxide insulation A portion of the oxide semiconductor layers 133 and 134 that overlap with film 107 is in contact with the oxide insulating film 107. It is heated in a certain state.

[0112] Through the above process, the oxide semiconductor layer after film formation is dehydrated or dehydrogenated. After performing a heat treatment to reduce resistance, a portion of the oxide semiconductor layer is selectively treated to reduce oxygen excess. This is the state.

[0113] As a result, in the oxide semiconductor layer 133, a channel formation region overlapping with the gate electrode layer 161 is formed. Region 166 becomes of type I, and a high-resistance source region 167a overlapping with the source electrode layer 165a and a high-resistance drain region 167b overlapping with the drain electrode layer 165b are self-alignedly formed , and an oxide semiconductor layer 163 is formed. Similarly, in the oxide semiconductor layer 134, a channel formation region 116 overlapping with the gate electrode layer 101 becomes of type I, and a high-resistance source region 117a overlapping with the source electrode layer 105a and a high-resistance drain region 117b overlapping with the drain electrode layer 105b are self-alignedly formed, and an oxide semiconductor layer 103 is formed.

[0114] In addition, in the oxide semiconductor layers 103 and 163 stacked with the drain electrode layers 105b and 165b (and the source electrode layers 105a and 165a), by forming high-resistance drain regions 117b and 167b (or high-resistance source regions 117a and 167a), it is possible to improve the reliability when forming a circuit. Specifically, by forming the high-resistance drain regions 117b and 167b, it is possible to form a structure in which the conductivity can be changed stepwise from the drain electrode layers 105b and 165b to the high-resistance drain regions 117b and 167b, the channel formation regions 116 and 166. Therefore, when operating by connecting to a wiring that supplies a high power supply potential VDD to the drain electrode layers 105b and 165b, even if a high electric field is applied between the gate electrode layers 101 and 161 and the drain electrode layers 105b and 165b, the high-resistance drain region serves as a buffer and a local high electric field is not applied, and a configuration can be obtained in which the breakdown voltage of the transistor is improved. That is, by forming the high-resistance drain regions 117b and 167b, it is possible to change the conductivity stepwise from the drain electrode layers 105b and 165b to the high-resistance drain regions 117b , 167b, the channel formation regions 116 and 166. Therefore, when operating by connecting to a wiring that supplies a high power supply potential VDD to the drain electrode layers 105b and 165b, even if a high electric field is applied between the gate electrode layers 101 and 161 and the drain electrode layers 105b and 165b, the high-resistance drain region serves as a buffer and a local high electric field is not applied, and a configuration can be obtained in which the breakdown voltage of the transistor is improved. Moreover, in the oxide semiconductor layers 103 and 163 stacked with the drain electrode layers 105b and 165b (and the source electrode layers 105a and 165a), by forming high-resistance drain regions 117b and 167b (or high-resistance source regions 117a and 167a), it is possible to improve the reliability when forming a circuit. Specifically, by forming the high-resistance drain regions 117b and 167b, it is possible to form a structure in which the conductivity can be changed stepwise from the drain electrode layers 105b and 165b to the high-resistance drain regions 117b , 167b, the channel formation regions 116 and 166. Therefore, when operating by connecting to a wiring that supplies a high power supply potential VDD to the drain electrode layers 105b and 165b, even if a high electric field is applied between the gate electrode layers 101 and 161 and the drain electrode layers 105b and 165b, the high-resistance drain region serves as a buffer and a local high electric field is not applied, and a configuration can be obtained in which the breakdown voltage of the transistor is improved. That is, by forming the high-resistance drain regions 117b and 167b,

[0115] it is possible to change the conductivity stepwise from the drain electrode layers 105b and 165b to the high-resistance drain regions 117b In the stacked oxide semiconductor layers 103 and 163, by forming high-resistance drain regions 117b and 167b ( or high-resistance source regions 117a and 167a), when a circuit is formed, the leakage current in the channel formation regions 116 and 166 can be reduced.

[0116] In this embodiment, after forming a silicon oxide film as the oxide insulating film 107 by sputtering, a heat treatment at 250°C to 350°C is performed to infiltrate and diffuse oxygen into the oxide semiconductor layer from the exposed portion (channel formation region) of the oxide semiconductor layer between the source region and the drain region. By producing a silicon oxide film by sputtering, excessive oxygen can be contained in the silicon oxide film, and the oxygen can be infiltrated and diffused into the oxide semiconductor layer by heat treatment. By infiltrating and diffusing oxygen into the oxide semiconductor layer, the channel region can be made highly resistive (type I). Thereby, a normally-off thin film transistor can be obtained.

[0117]

[0118]

[0119] <000093,A silicon nitride film is formed using the sputtering method. RF sputtering is suitable for mass production, and therefore protects This is a preferred method for forming an insulating layer. The protective insulating layer is resistant to moisture, hydrogen ions, and OH - etc. Using an inorganic insulating film that is free of impurities and blocks their intrusion from the outside, nitridation Silicon films, aluminum nitride films, silicon nitride oxide films, aluminum oxide nitride films, etc. are used. In this embodiment, a protective insulating layer 106 is formed using a silicon nitride film as a protective insulating layer. See Figure 4(A).

[0119] Through the above process, a thin-film transistor 180 is installed in the drive circuit section and a pixel section is installed on the same substrate. Thin-film transistors 170 and capacitance 147 can be fabricated. 0, 180 is an acid containing a high-resistance source region, a high-resistance drain region, and a channel-forming region. This is a bottom-gate thin-film transistor containing a synthetic semiconductor layer. Therefore, it is a thin-film transistor. For models 170 and 180, even when a high electric field is applied, the high-resistance drain region or high-resistance source region remains unchanged. This configuration acts as a buffer, preventing the application of a localized high electric field and improving the transistor's breakdown voltage. It is.

[0120] Capacitance 147 uses the gate insulating layer 102 in the capacitance section as a dielectric, and the capacitance wiring layer 108 and It is formed with a capacitive electrode layer 149.

[0121] By forming the drive circuit and pixel section on the same substrate, the connection between the drive circuit and external signals is improved. The wire length can be shortened, making it possible to miniaturize and reduce the cost of the light-emitting device.

[0122] Next, a color filter layer 191 is formed on the protective insulating layer 106. Then, a green color filter layer, a blue color filter layer, a red color filter layer, etc. can be used, and the green color filter layer, the blue color filter layer, and the red color filter layer are sequentially formed. Each color filter layer is formed by a printing method, an inkjet method, an etching method using photolithography technology, etc. respectively. By providing the color filter layer, the alignment between the color filter layer and the light emitting region of the light emitting element can be performed without depending on the bonding accuracy of the sealing substrate. In this embodiment, the 5th, 6th, and 7th photolithography processes are performed to form each green color filter layer, blue color filter layer, and red color filter layer. Next, an overcoat layer 192 covering the color filter layer (green color filter layer, blue color filter layer, and red color filter layer) is formed. The overcoat layer 192 uses a resin having light transmittance. In this embodiment, the 8th photolithography process is

[0123] performed to form the overcoat layer 192. Here, an example of full-color display using three colors of RGB is shown, but it is not particularly limited, and full-color display may be performed using four colors of RG BW.

[0124]

[0125] [[ID=�2]]<o000974> Next, a protective insulating layer 109 covering the overcoat layer 192 and the protective insulating layer 106 is formed (see Fig. 4(B)). The protective insulating layer 109 uses an inorganic insulating film, such as a silicon nitride film, an aluminum nitride film, a silicon oxynitride film, or an aluminum oxynitride. As the protective insulating layer 109, if an insulating film having the same composition as the protective insulating layer 106 is used, the formation of contact holes in the subsequent ​​​This is preferable because it allows etching in a single step.

[0126] Next, a ninth photolithography step is performed to form a resist mask, and an oxide insulating film 1 is formed. 07, by etching the protective insulating layer 106 and protective insulating layer 109, the drain electrode layer 105 A contact hole 125 reaching b is formed, and the resist mask is removed (see Figure 5(A)). Illuminated. ) Also, etching here creates a contact hole 1 that reaches the second terminal 122. 27. A contact hole 126 that reaches the connecting electrode 120 is also formed. The resist mask for forming the holes may be formed by an inkjet method. Forming the mask using an inkjet method eliminates the need for a photomask, thus lowering manufacturing costs. It can be reduced.

[0127] Next, a light-transmitting conductive film is formed. The material for the light-transmitting conductive film is an oxide Indium (In2O3) and indium oxide tin oxide alloy (In2O3-SnO2, IT These are formed using sputtering or vacuum deposition methods (abbreviated as O). As another material for conductive films, there is a nitrogen-containing Al-Zn-O non-single crystal film, i.e., Al- Zn-ON non-single crystal films, nitrogen-containing Zn-O non-single crystal films, and nitrogen-containing Sn-Zn-O non-single crystal films may also be used. Furthermore, Al-Zn-ON non-single crystal films may also be used. The composition ratio (atomic %) of zinc shall be 47 atomic % or less, and the composition ratio of aluminum in the non-single crystal film The composition ratio of aluminum in a non-single crystal film (atomic %) is greater than (atomic %), and the composition ratio of aluminum in a non-single crystal film (atomic %) is greater than (atomic %). The nitrogen content (atomic %) is greater than the composition ratio within it. Etching treatment of such materials is performed using hydrochloric acid-based solutions. This is done using a solution. However, etching ITO in particular tends to generate residue, so etching Even when using indium zinc oxide alloy (In2O3-ZnO) to improve machinability good.

[0128] The composition ratio of the light-transmitting conductive film is expressed in atomic percent, and the electron beam microanalyzer... (EPMA:Electron Probe X-ray MicroAnalyzer The evaluation shall be conducted by analysis using ).

[0129] Next, a tenth photolithography step is performed to form a resist mask, followed by etching. By removing the unnecessary portion of the conductive film which has greater light transmission, the first electrode layer 110 and the conductive layer 111 are obtained. Terminal electrodes 128 and 129 are formed, and the resist mask is removed.

[0130] The gate insulating layer 102 is used as a dielectric, and the capacitance wiring layer 108 and capacitance electrode layer 149 are formed together. A quantity 147 can also be formed on the same substrate. In addition, in a light-emitting device, the capacitive electrode layer 1 49 is part of the power supply line, and the capacitive wiring layer 108 is part of the gate electrode layer of the drive TFT. It is a department.

[0131] The terminal electrodes 128 and 129 formed on the terminal portion are electrodes or connections used for connecting to the FPC. It becomes a line. The terminal electrode 128 formed on the first terminal 121 via the connecting electrode 120 is It serves as a connecting terminal electrode that functions as an input terminal for gate wiring. The formed terminal electrode 129 is a connecting terminal electrode that functions as an input terminal for the source wiring. ru.

[0132] Furthermore, Figures 11(A1) and 11(A2) show cross-sectional views of the gate wiring terminal section at this stage and The top views are shown for each. Figure 11(A1) is along the line C1-C2 in Figure 11(A2) This corresponds to a cross-sectional view. In Figure 11(A1), the conductive film formed on the oxide insulating film 107 The film 155 is a terminal electrode for connection that functions as an input terminal. Also, see Figure 11(A1) In the terminal section, there is a first terminal 151 formed of the same material as the gate wiring, and a source The connecting electrode 153, which is formed from the same material as the wiring, overlaps with the gate insulating layer 102 and directly They are in contact and electrically connected. Also, the connecting electrode 153 and the conductive film 155 are provided in the oxide insulating film 107. Electrical conductivity is established through direct contact via the cut-out contact holes.

[0133] Furthermore, Figures 11(B1) and 11(B2) show a cross-sectional view and a top view of the source wiring terminal section. Each is illustrated. Also, Figure 11(B1) follows the line D1-D2 in Figure 11(B2). This corresponds to a cross-sectional view. In Figure 11(B1), a conductive film is formed on the oxide insulating film 107. The film 155 is a terminal electrode for connection that functions as an input terminal. Also, in Figure 11(B1) In the terminal section, an electrode 156, formed from the same material as the gate wiring, is connected to the source wiring. It overlaps below the second terminal 150, which is gas-connected, via the gate insulating layer 102. Electrode 1 56 is not electrically connected to the second terminal 150, and electrode 156 is not electrically connected to the second terminal 150. Setting to different potentials, such as floating, GND, or 0V, can help with noise reduction. It can form capacitance or capacitance for electrostatic discharge protection. Also, the second terminal 150 It is electrically connected to the conductive film 155 via the oxide insulating film 107.

[0134] Multiple gate lines, source lines, and capacitive lines are provided depending on the pixel density. Furthermore, at the terminal section, there is a first terminal at the same potential as the gate wiring, and a second terminal at the same potential as the source wiring. Multiple terminals, such as terminal 2 and a third terminal at the same potential as the capacitance wiring, are arranged in a row. The number of terminals can be any number desired, and the implementer may decide this as appropriate.

[0135] Thin-film transistors and retaining capacitors are arranged in a matrix corresponding to each individual pixel to form the pixel area. This can be used as one of the substrates for fabricating an active-matrix type display device. For convenience, in this specification, such a substrate is referred to as an active matrix substrate.

[0136] By providing the conductive layer 111 in a position that overlaps with the channel formation region 166 of the oxide semiconductor layer, This refers to the bias-thermal stress test (BT) used to investigate the reliability of thin-film transistors. In the test, the threshold voltage of the thin-film transistor 180 before and after the BT test was The amount of change can be reduced. Also, the conductive layer 111 has the same potential as the gate electrode layer 161. They can be the same or different, and they can also function as a second gate electrode layer. Furthermore, the potential of the conductive layer 111 may be GND, 0V, or in a floating state. .

[0137] Next, a partition wall 193 is formed so as to cover the peripheral edge of the first electrode layer 110. Organic resin films such as polyimide, acrylic, polyamide, epoxy, inorganic insulating films or white It is formed using xane resin.

[0138] Siloxane-based resins are formed using siloxane-based materials as the starting material for Si-OS. This corresponds to a resin containing i-bonds. Siloxane resins use organic groups (e.g., alkyl groups) as substituents. You may also use aryl groups or fluoro groups. Furthermore, organic groups may have fluoro groups. You can.

[0139] For the partition wall 193, materials such as PSG (phosphorus glass) and BPSG (phosphorus boron glass) can also be used. This can be achieved. Furthermore, by stacking multiple insulating films made of these materials, a partition wall 1 can be formed. 93 may be formed.

[0140] The method for forming the partition wall 193 is not particularly limited and can be done by sputtering, SOG, etc., depending on the material. Methods include spin coating, dip coating, spray coating, droplet ejection (inkjet method, screen coating). Printing (including offset printing), doctor knife, roll coater, curtain coater, etc. Ifcoaters and the like can be used. In addition, partitions 1 can be used as other insulating layers for the light-emitting device. The materials and methods shown as example 93 may also be used.

[0141] The partition wall 193 is made of a particularly photosensitive resin material and has an opening formed on the first electrode layer 110. The side walls of the opening should be formed to form inclined surfaces with a continuous curvature. When a photosensitive resin material is used as the partition wall 193, the step of forming a resist mask is omitted. This can be omitted. In this embodiment, the 11th photolithography step is performed, and partition wall 1 Forms 93.

[0142] An EL layer 194 is formed on the first electrode layer 110, and a second electrode layer 195 is formed on the EL layer 194. This is used to form a light-emitting element. The second electrode layer 195 is electrically connected to a common potential line. The second electrode layer 195 can be made of various materials, but a material with a small work function is preferable. For example, specifically alkali metals such as Li and Cs, and alkali metals such as Mg, Ca, and Sr. Potassium earth metals and alloys containing them (such as Mg:Ag, Al:Li, etc.), as well as Yb and E Rare earth metals such as r are preferred. In this embodiment, aluminum is used as the second electrode layer 195. A um film is used.

[0143] Thus, through 11 photolithography steps, 11 photomasks are used to create a thin film. A drive circuit section having a film transistor 180, a thin film transistor 170, and a light-emitting element. Figure 1 shows a pixel section, a capacitor 147 having a holding capacity, and an external output terminal section. The light-emitting device of this embodiment can be manufactured.

[0144] Furthermore, in this embodiment, the oxide insulating film 107, protective insulating layer 106, and protective insulating layer 10 This example shows how to form a contact hole in 9 in a single photolithography step, but different methods may be used. The process may be divided into multiple photolithography steps using a photomask. For example, The oxide insulating film 107 and protective insulating layer 106, which form the interlayer insulating layer, are first subjected to a fifth photolithography process. The Fi process is performed to form contact holes, and then the 6th to 9th photolithography process is performed. Therefore, after forming the RGB color filter layer and the overcoat layer, the 10th F Even if a photolithography process is performed to form contact holes in the protective insulating layer 109 Good. In this case, the number of photolithography steps and photomasks increases by one, and the light-emitting device... The fabrication process involves 12 photolithography steps and the use of 12 photomasks.

[0145] Furthermore, in the aforementioned photolithography process, the transmitted light becomes an exposure mass with multiple intensities. The etching process may be performed using a mask layer formed by a multi-gradation mask. stomach.

[0146] A mask layer formed using a multi-gradation mask has a shape with multiple film thicknesses, and the mask layer By etching, the shape can be further deformed, allowing for different patterns. It can be used in multiple etching processes. Therefore, a single multi-gradation mask can be used. This allows for the formation of mask layers that correspond to at least two different patterns. Therefore, the number of exposure masks can be reduced, and the corresponding photolithography process can also be reduced. This allows for a simplification of the process.

[0147] Furthermore, when fabricating a light-emitting device, the power supply that is electrically connected to the source electrode layer of the driving TFT is also necessary. A power supply line is provided, and this power supply line crosses the gate wiring and also crosses the source wiring, and, It is formed using the same material and process as the gate electrode layer.

[0148] Furthermore, when fabricating a light-emitting device, one electrode of the light-emitting element is the drain electrode layer of the driving TFT. A common potential line is provided that is electrically connected to the other electrode of the light-emitting element. Furthermore, this common potential line can be formed using the same material and process as the gate electrode layer. .

[0149] Furthermore, when fabricating a light-emitting device, one pixel may have multiple thin-film transistors, and one of the thin-film transistors A connection is provided to connect the gate electrode layer and the drain electrode layer of the film transistor. It can be done.

[0150] By forming it with a thin-film transistor using an oxide semiconductor, manufacturing costs can be reduced. This can be achieved. In particular, by the above method, an oxide insulating film can be formed in contact with the oxide semiconductor layer. By doing so, we can fabricate and provide thin-film transistors with stable electrical characteristics. Therefore, it is possible to provide a light-emitting device having a thin-film transistor with good electrical characteristics and high reliability. It is possible.

[0151] Since the semiconductor layer in the channel formation region is a high-resistivity region, the electrical characteristics of the thin-film transistor are It stabilizes the system and prevents increases in off-current, etc. Therefore, it has good electrical characteristics and is reliable. This makes it possible to create a light-emitting device with high-performance thin-film transistors.

[0152] Furthermore, thin-film transistors are susceptible to damage from static electricity, etc., so the pixel area or driving circuit It is preferable to provide the protection circuit on the same substrate. The protection circuit uses an oxide semiconductor layer. It is preferable to use nonlinear elements in the configuration. For example, the protection circuit consists of a pixel section and a scan line input It is arranged between the terminal and the signal line input terminal. In this embodiment, multiple protection circuits are arranged. When a surge voltage is applied to the scan line, signal line, and capacitive bus line due to static electricity, the pixel It is designed to prevent damage to transistors and other components. Therefore, the protection circuit is designed to protect against surge currents. The circuit is configured to release charge to the common wiring when pressure is applied. Furthermore, the protection circuit is designed to allow the run It is composed of nonlinear elements arranged in parallel with respect to the ratio. The nonlinear elements are die It is composed of two-terminal elements such as diodes or three-terminal elements such as transistors. For example, It is also possible to form it using the same process as the thin-film transistor 170 in the pixel section, for example, the gate By connecting the terminal and the drain terminal, it is possible to give it characteristics similar to those of a diode. ru.

[0153] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0154] (Embodiment 2) In this embodiment, in Embodiment 1, the oxide semiconductor layer and the source electrode layer or drain Figure 6 shows an example of providing an oxide conductive layer as a source region and a drain region between the electrode layer and the electrode layer. This is shown in Figure 7. Therefore, the rest can be carried out in the same manner as in Embodiment 1, and some parts are the same as in Embodiment 1. The explanation of parts with a similar function or the repetition of the process will be omitted. Also, Figure 6 and Figure 7 is the same as Figures 1 through 5 except for some differences in the process, therefore the same symbols are used in the same locations. We will use a number and omit detailed explanations of the same section.

[0155] First, we will carry out the steps up to Figure 3(B) in Embodiment 1 according to Embodiment 1. Figure 6( A) is identical to Figure 3(B).

[0156] An oxide conductive film 140 is formed on dehydrated or dehydrogenated oxide semiconductor layers 133 and 134. A metal conductive film made of a metal conductive material is then laminated onto the oxide conductive film 140.

[0157] The deposition method for oxide conductive film 140 includes sputtering and vacuum deposition (electron beam deposition). Alternatively, arc discharge ion plating or spray method can be used. Oxide conductive film 14 As for material 0, it is preferable to have one that contains zinc oxide as a component and does not contain indium oxide. It is preferable that the oxide conductive film 140 is zinc oxide, pseudo oxide Lead-aluminum, zinc-aluminum oxynitride, zinc-gallium oxide, etc. can be applied. The film thickness should be appropriately selected within the range of 50 nm to 300 nm. Also, sputtering When using this method, a target containing 2% to 10% by weight of SiO2 is used for film deposition. This process involves incorporating SiOx (X>0) into the oxide conductive film to inhibit crystallization, and then performing the de-icing process in a later step. It is preferable to suppress crystallization during heat treatment for hydration or dehydrogenation. stomach.

[0158] Next, the fourth photolithography process is performed, and resist masks 136a, 136b, 13 Form 6c, 136d, 136e, 136f, and 136g, and then etch them to form a metallic conductive film. Remove the unnecessary parts to form the source electrode layer 105a, drain electrode layer 105b, and source electrode layer 165a, drain electrode layer 165b, capacitive electrode layer 149, connecting electrode 120, and second end Child 122 is formed (see Figure 6(B)).

[0159] Furthermore, during etching of the metal conductive film, the oxide conductive film 140 and the oxide semiconductor layer 133, Adjust the materials and etching conditions accordingly to ensure that 134 is not removed.

[0160] Next, resist masks 136a, 136b, 136c, 136d, 136e, 136f, Remove 136g, then source electrode layer 105a, drain electrode layer 105b, source electrode layer 16 5a. Using the drain electrode layer 165b as a mask, the oxide conductive film 140 is etched, and acid The oxide conductive layers 164a, 164b, oxide conductive layers 104a, 104b, and capacitive electrode layer 185 Formed (see Figure 6(C)). The oxide conductive film 140, which has zinc oxide as a component, is, for example, It can be easily etched using an alkaline solution such as a stripping agent for discoloration. In the same process, oxide conductive layers 138 and 139 are also formed on the terminal portion.

[0161] By utilizing the difference in etching rates between the oxide semiconductor layer and the oxide conductive layer, a channel region is formed. To separate the oxide conductive layer, an etching process is performed. By taking advantage of the fact that the pulsation rate is faster compared to the oxide semiconductor layer, the oxide conductive layer on the oxide semiconductor layer The layers are selectively etched.

[0162] Therefore, resist masks 136a, 136b, 136c, 136d, 136e, 136f The removal of 136g is preferably done by an ashing process. In the case of etching, the oxide conductive film 140 and the oxide semiconductor layers 133 and 134 are excessively etched. To prevent etching, the etching conditions (type of etchant, concentration, etching time) must be carefully considered. Adjust the following as appropriate.

[0163] As in this embodiment, after etching the oxide semiconductor layer in an island shape, the oxide conductive film and gold A wiring pattern is created by laminating conductive films and using the same mask to include the source electrode layer and the drain electrode layer. By etching the metal conductive film, the oxide conductive film is left behind beneath the wiring pattern of the metal conductive film. It can be made to happen.

[0164] In the contact between the gate wiring (conductive layer 162) and the source wiring (drain electrode layer 165b) However, because an oxide conductive layer 164b is formed beneath the source wiring, the buff This results in only a series resistance equal to the thickness, and it does not form an insulating oxide with the metal, which is preferable. stomach

[0165] An oxide insulating film 107 is formed, which will serve as a protective insulating film in contact with the oxide semiconductor layers 133 and 134. In this embodiment, a silicon oxide film with a thickness of 300 nm is used as the oxide insulating film 107, The film is deposited using the taring method.

[0166] Next, a second heat treatment (preferably 2) is performed under an inert gas atmosphere or a nitrogen gas atmosphere. Perform the procedure at temperatures between 0°C and 400°C (for example, between 250°C and 350°C). For example, under a nitrogen atmosphere. A second heat treatment is performed at 250°C for 1 hour under gas pressure. After the second heat treatment, the oxide insulation A portion of the oxide semiconductor layers 133 and 134 that overlap with film 107 is in contact with the oxide insulating film 107. It is heated in a certain state.

[0167] Through the above process, the oxide semiconductor layer after film formation is dehydrated or dehydrogenated. After performing a heat treatment to reduce resistance, a portion of the oxide semiconductor layer is selectively treated to reduce oxygen excess. This is the state.

[0168] As a result, in the oxide semiconductor layer 133, a channel formation region overlapping with the gate electrode layer 161 is formed. Region 166 is type I and has a high resistance that overlaps with the source electrode layer 165a and the oxide conductive layer 164a. The anti-source region 167a and the high overlapping the drain electrode layer 165b and the oxide conductive layer 164b The resistive drain region 167b is formed in a self-aligned manner, and the oxide semiconductor layer 163 is formed. Similarly, in the oxide semiconductor layer 134, a channel is formed that overlaps with the gate electrode layer 101. Region 116 is of type I and overlaps with the source electrode layer 105a and the oxide conductive layer 104a. The resistive source region 117a overlaps with the drain electrode layer 105b and the oxide conductive layer 164b. A high-resistance drain region 117b is formed in a self-aligned manner, and an oxide semiconductor layer 103 is formed. It can be done.

[0169] The oxide semiconductor layers 103 and 163 and the drain electrode layer 105b made of a metal material, drain The oxide conductive layers 104b and 164b provided between the pole layers 165b are low-resistance drain regions. LRN (Low Resistance N-type conductivity) area It also functions as a region (also called the LRD (Low Resistance Drain) region). Similarly, the oxide semiconductor layers 103 and 163 and the source electrode layer 105a made of a metal material. The oxide conductive layers 104a and 164a provided between the source electrode layers 165a are low-resistance so LRN (Low Resistance N-type conduction) (Also called the ty) region, or LRS (Low Resistance Source) region) It still functions. The drain electrode consists of an oxide semiconductor layer, a low-resistance drain region, and a metallic material. By using a layered configuration, the transistor's voltage rating can be further improved. In general, the carrier concentration in the low-resistance drain region is higher than in the high-resistance drain region (HRD region). It can also be large, for example, 1 x 10 20 / cm 3 The above 1 x 10 21 / cm 3 Within the following range preferable.

[0170] Through the above process, a thin-film transistor 181 is installed in the drive circuit section and a pixel section is installed on the same substrate. Thin-film transistor 171 can be fabricated. Thin-film transistors 171 and 181 are an oxide semiconductor layer including a high-resistance source region, a high-resistance drain region, and a channel-forming region. This is a bottom-gate thin-film transistor that includes [a specific component]. Therefore, thin-film transistors 171 and 18... 1. Even when a high electric field is applied, the high-resistance drain region or high-resistance source region acts as a buffer. This configuration prevents the application of a localized high electric field, thereby improving the transistor's breakdown voltage.

[0171] Furthermore, in the capacitance section, there is a capacitance wiring layer 108, a gate insulating layer 102, and an oxide conductive layer 104b. The capacitive electrode layer 185 and drain electrode layer 105b formed in the same process A capacitance 146 is formed by lamination with a capacitance electrode layer 149.

[0172] Next, a protective insulating layer 106 is formed on the oxide insulating film 107, and the protective insulating layer in the pixel portion A color filter layer 191 is formed on 106. Cover the color filter layer 191. A supercoat layer 192 is formed, covering the protective insulating layer 106 and the supercoat layer 192. A protective insulating layer 109 is formed.

[0173] Next, a ninth photolithography step is performed in the same manner as in Embodiment 1 to form a resist mask. The oxide insulating film 107, protective insulating layer 106, and protective insulating layer 109 are etched. A contact hole 125 is formed that reaches the drain electrode layer 105b, and the resist mask is removed. Remove (see Figure 6(D)). Also, etching here reaches the connecting electrode 120. Contact hole 126 and contact hole 127 reaching the second terminal 122 are also formed. .

[0174] Next, a translucent conductive film is formed, and a tenth photolithography step is performed, and the resin A mask is formed, and unwanted parts are removed by etching to form the first electrode layer 110 and the conductive layer 111, terminal electrodes 128 and 129 are formed, and the resist mask is removed (see Figure 7(A)). . ) .

[0175] Similar to Embodiment 1, an eleventh photolithography step is performed to form the partition wall 193. An EL layer 194 and a second electrode layer 195 are stacked on a first electrode layer 110 to form a light-emitting element. The light-emitting device of this embodiment is fabricated (see Figure 7(B)).

[0176] The source region and drain region consist of an oxide conductive layer, an oxide semiconductor layer and a source electrode layer and By placing it between the drain electrode layer, the resistance of the source region and the drain region can be reduced. This enables high-speed operation of the transistor. The use of an oxide conductive layer is intended to improve the frequency characteristics of the peripheral circuit (drive circuit). It is effective for this purpose. Compared to contact between a metal electrode (Ti, etc.) and an oxide semiconductor layer, This is because contact between the ) and the oxide conductive layer can reduce contact resistance.

[0177] Furthermore, molybdenum (Mo), which is used as part of the wiring material in light-emitting devices, (for example, The high contact resistance with the oxide semiconductor layer (Mo / Al / Mo) was a problem. Compared to other metals, Mo is less prone to oxidation, so its ability to extract oxygen from the oxide semiconductor layer is weaker, and Mo and acid This is because the contact interface of the oxide semiconductor layer does not become n-type. However, even in such cases, the oxide semiconductor... Contact is achieved by interposing an oxide conductive layer between the conductor layer and the source electrode layer and drain electrode layer. This reduces resistance and improves the frequency characteristics of the surrounding circuitry (drive circuitry).

[0178] The channel length of a thin-film transistor is determined during the etching of the oxide conductive layer, therefore It is possible to shorten the channel length. For example, the channel length can be shortened to 0.1 μm or more and 2 μm or less. It can increase the operating speed.

[0179] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0180] (Embodiment 3) In this embodiment, in Embodiment 1 or Embodiment 2, the oxide semiconductor layer and the source electric An oxide conductive layer is provided between the polar layer and the drain electrode layer, serving as the source region and the drain region. Other examples are shown in Figures 8 and 9. Therefore, the rest are the same as in Embodiment 1 or Embodiment 2. This can be done, and involves parts that are the same as or have the same function as those in Embodiment 1 or Embodiment 2. The explanation of the repetition of the process will be omitted. Also, Figures 8 and 9 show the process as shown in Figures 1 to 7. Since they are the same except for a few differences, the same symbols are used for the same parts, and the detailed explanation of the same parts is also used. The "Akira" part will be omitted.

[0181] First, according to Embodiment 1, a metal conductive film is formed on the substrate 100, and the metal conductive film is first Etching is performed using a resist mask formed by a photolithography process, and the first edge Child 121, gate electrode layer 161, conductive layer 162, gate electrode layer 101, capacitive wiring layer 108 It forms.

[0182] Next, the first terminal 121, gate electrode layer 161, conductive layer 162, gate electrode layer 101, A gate insulating layer 102 is formed on the wiring layer 108, and an oxide semiconductor film and an oxide conductive film are laminated. The gate insulating layer, oxide semiconductor film, and oxide conductive film are deposited continuously without exposure to the atmosphere. It is possible.

[0183] A resist mask is formed on the oxide conductive film by a second photolithography process. Using a stoichiometric mask, the gate insulating layer, oxide semiconductor film, and oxide conductive film are etched. Contact hole 119 reaching the first terminal 121, contact hole reaching the conductive layer 162 Forms a ring 118.

[0184] The resist mask is removed by a second photolithography step, and then the oxide conductive film is applied. A resist mask is formed by the photolithography process in step 3. Third photolithograph Island-shaped oxide semiconductor layers and oxide conductive layers are formed using a resist mask produced by the I process.

[0185] In this way, with the oxide semiconductor film and the oxide conductive film laminated across the entire surface of the gate insulating layer, When a process is performed to form contact holes in the gate insulating layer, a resist is formed on the surface of the gate insulating layer. Because the screw does not come into direct contact, contamination of the gate insulating layer surface (adhesion of impurities, etc.) is prevented. Yes, it is possible. Therefore, the interface between the gate insulating layer and the oxide semiconductor film and oxide conductive film is kept good. This allows for improved reliability.

[0186] Next, the oxide semiconductor layer and the oxide conductive layer are subjected to dehydration and dehydrogenation heating treatment. The process involves heat treatment at temperatures between 400°C and 700°C to dehydrate the oxide semiconductor layer. This allows for dehydrogenation and prevents subsequent re-impregnation with water (H2O).

[0187] This heat treatment ensures that the oxide conductive layer does not contain crystallization-inhibiting substances such as silicon dioxide. As long as the oxide conductive layer is present, it will crystallize. The crystals of the oxide conductive layer will grow in a columnar shape relative to the substrate. As a result, in order to form the source electrode layer and the drain electrode layer, the upper layer of the oxide conductive layer When etching a metal conductive film, it is possible to prevent the formation of undercuts.

[0188] Furthermore, the conductivity of the oxide conductive layer is improved by heat treatment to dehydrate and dehydrogenate the oxide semiconductor layer. It can be improved. Furthermore, the oxide conductive layer can be treated at a lower temperature than the oxide semiconductor layer. It can be heat-treated.

[0189] Furthermore, the first heat treatment of the oxide semiconductor layer and the oxide conductive layer is performed on the island-shaped oxide semiconductor layer and This can also be done on oxide semiconductor films and oxide conductive films before they are processed into oxide conductive layers. In some cases, after the first heat treatment, the substrate is removed from the heating device and proceeds to the photolithography process. Perform.

[0190] Through the above process, oxide semiconductor layers 133, 134 and oxide conductive layers 142, 143 are obtained. (See Figure 8(A).) Oxide semiconductor layer 133 and oxide conductive layer 142, oxide semiconductor layer Layers 134 and 143 are island-like laminates formed using the same mask. ru.

[0191] Next, the fourth photolithography process is performed, and resist masks 136a, 136b, 13 Form 6c, 136d, 136e, 136f, and 136g, and then etch them to form a metallic conductive film. Remove the unnecessary parts to form the source electrode layer 105a, drain electrode layer 105b, and source electrode layer 165a, drain electrode layer 165b, capacitive electrode layer 149, connecting electrode 120, and second end Child 122 is formed (see Figure 8(B)).

[0192] Furthermore, during etching of the metal conductive film, the oxide conductive layers 142, 143 and the oxide semiconductor layer Adjust the respective materials and etching conditions as needed to ensure that 133 and 134 are not removed. .

[0193] Next, resist masks 136a, 136b, 136c, 136d, 136e, 136f, Remove 136g, then source electrode layer 105a, drain electrode layer 105b, source electrode layer 16 5a, the oxide conductive layers 142 and 143 are etched using the drain electrode layer 165b as a mask. Then, oxide conductive layers 164a, 164b and oxide conductive layers 104a, 104b are formed. See Figure 8(C). The oxide conductive layers 142 and 143, which have zinc oxide as a component, are, for example, resin It can be easily etched using an alkaline solution such as a stripping agent.

[0194] Therefore, resist masks 136a, 136b, 136c, 136d, 136e, 136f The removal of 136g is preferably done by an ashing process. In the case of etching, the oxide conductive layers 142, 143 and the oxide semiconductor layers 133, 134 To prevent excessive etching, the etching conditions (type of etchant, concentration, etching) must be carefully considered. Adjust the (playing time) as needed.

[0195] An oxide insulating film 107 is formed, which will serve as a protective insulating film in contact with the oxide semiconductor layers 133 and 134. In this embodiment, a silicon oxide film with a thickness of 300 nm is used as the oxide insulating film 107, The film is deposited using the taring method.

[0196] Next, a second heat treatment (preferably 2) is performed under an inert gas atmosphere or a nitrogen gas atmosphere. Perform the procedure at temperatures between 0°C and 400°C (for example, between 250°C and 350°C). For example, under a nitrogen atmosphere. A second heat treatment is performed at 250°C for 1 hour under gas pressure. After the second heat treatment, the oxide insulation A portion of the oxide semiconductor layers 133 and 134 that overlap with film 107 is in contact with the oxide insulating film 107. It is heated in a certain state.

[0197] Through the above process, the oxide semiconductor layer after film formation is dehydrated or dehydrogenated. After performing a heat treatment to reduce resistance, a portion of the oxide semiconductor layer is selectively treated to reduce oxygen excess. This is the state.

[0198] As a result, in the oxide semiconductor layer 133, a channel formation region overlapping with the gate electrode layer 161 is formed. Region 166 is type I and has a high resistance that overlaps with the source electrode layer 165a and the oxide conductive layer 164a. The anti-source region 167a and the high overlapping the drain electrode layer 165b and the oxide conductive layer 164b The resistive drain region 167b is formed in a self-aligned manner, and the oxide semiconductor layer 163 is formed. Similarly, in the oxide semiconductor layer 134, a channel is formed that overlaps with the gate electrode layer 101. Region 116 is of type I and overlaps with the source electrode layer 105a and the oxide conductive layer 104a. The resistive source region 117a overlaps with the drain electrode layer 105b and the oxide conductive layer 164b. A high-resistance drain region 117b is formed in a self-aligned manner, and an oxide semiconductor layer 103 is formed. It can be done.

[0199] The oxide semiconductor layers 103 and 163 and the drain electrode layer 105b made of a metal material, drain The oxide conductive layers 104b and 164b provided between the pole layers 165b are low-resistance drain regions. It also functions as an LRN region (also called an LRD region). Similarly, oxide semiconductor layer 103, It is provided between the source electrode layer 105a and source electrode layer 165a, which are made of metal material and 163. The oxide conductive layers 104a and 164a are low-resistance source regions (also called LRN regions and LRS regions). It also functions as a drain. It consists of an oxide semiconductor layer, a low-resistance drain region, and a metal material. By using this electrode layer configuration, the transistor's breakdown voltage can be further improved. Specifically, the carrier concentration in the low-resistance drain region is lower in the high-resistance drain region (HRD region). Larger than ), for example, 1 × 10 20 / cm 3 The above 1 x 10 21 / cm 3 Within the following range It would be desirable to have it.

[0200] Through the above process, a thin-film transistor 182 is formed in the drive circuit section and a pixel section on the same substrate. Thin-film transistor 172 can be fabricated. Thin-film transistors 172 and 182 are an oxide semiconductor layer including a high-resistance source region, a high-resistance drain region, and a channel-forming region. This is a bottom-gate thin-film transistor that includes [a specific component]. Therefore, thin-film transistors 172 and 18... 2. Even when a high electric field is applied, the high-resistance drain region or high-resistance source region acts as a buffer. This configuration prevents the application of a localized high electric field, thereby improving the transistor's breakdown voltage.

[0201] Furthermore, in the capacitance section, the capacitance wiring layer 108, gate insulation layer 102, drain electrode layer 105 A capacitance 146 is formed by lamination with a capacitance electrode layer 149 formed in the same process as b.

[0202] Next, a protective insulating layer 106 is formed on the oxide insulating film 107, and the protective insulating layer in the pixel portion A color filter layer 191 is formed on 106. Cover the color filter layer 191. A supercoat layer 192 is formed, covering the protective insulating layer 106 and the supercoat layer 192. A protective insulating layer 109 is formed.

[0203] Next, a ninth photolithography step is performed in the same manner as in Embodiment 1 to form a resist mask. The oxide insulating film 107, protective insulating layer 106, and protective insulating layer 109 are etched. A contact hole 125 is formed that reaches the drain electrode layer 105b, and the resist mask is removed. Remove (see Figure 8(D)). Also, etching here leads to the second terminal 122. A contact hole 127 is formed, and a contact hole 126 that reaches the connecting electrode 120 is also formed. .

[0204] Next, a translucent conductive film is formed, and a tenth photolithography step is performed, and the resin A mask is formed, and unwanted parts are removed by etching to form the first electrode layer 110 and the conductive layer 111, terminal electrodes 128 and 129 are formed, and the resist mask is removed (see Figure 9(A)). . ) .

[0205] Similar to Embodiment 1, an eleventh photolithography step is performed to form the partition wall 193. An EL layer 194 and a second electrode layer 195 are stacked on a first electrode layer 110 to form a light-emitting element. The light-emitting device of this embodiment is fabricated (see Figure 9(B)).

[0206] The source region and drain region consist of an oxide conductive layer, an oxide semiconductor layer and a source electrode layer and By placing it between the drain electrode layer, the resistance of the source region and the drain region can be reduced. This enables high-speed operation of the transistor. The use of an oxide conductive layer is intended to improve the frequency characteristics of the peripheral circuit (drive circuit). It is effective for this purpose. Compared to contact between a metal electrode (Ti, etc.) and an oxide semiconductor layer, This is because contact between the ) and the oxide conductive layer can reduce contact resistance.

[0207] An oxide conductive layer is interposed between the oxide semiconductor layer and the source electrode layer and drain electrode layer. This reduces contact resistance and improves the frequency characteristics of the surrounding circuitry (drive circuitry). .

[0208] The channel length of a thin-film transistor is determined during the etching of the oxide conductive layer, therefore The channel length can be shortened. For example, a channel length of 0.1 μm to 2 μm. By shortening it, the operating speed can be increased.

[0209] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0210] (Embodiment 4) In this embodiment, the thin-film transistor of the pixel portion and the first electrode layer of the light-emitting element are connected by a connecting electrode layer. Figures 16 to 18 show examples of light-emitting devices that are electrically connected via an intermediate device. In terms of form, the method of connecting the transistor in the pixel section to the first electrode layer of the light-emitting element is different. Other than that, the same materials and methods can be used. Therefore, the rest is the same as in Embodiment 1. This can be done, and the same parts as in Embodiment 1 or parts having similar functions, and the repetition of the process The explanation of the return process will be omitted. Also, Figures 16 to 18 show some differences in the process compared to Figures 1 to 5. Since everything else is the same, the same symbols are used for the same parts, and detailed explanations of the same parts are omitted. .

[0211] Figure 16 shows the light-emitting device of this embodiment. The drain current of the thin-film transistor 170 in the pixel section The electrode layer 105b is electrically connected to the first electrode layer 110 via the connecting electrode layer 196. The method for fabricating the light-emitting device shown in Figure 16 will be explained using Figures 17 and 18.

[0212] First, the process is carried out according to Embodiment 1 up to the step shown in Figure 4(A) in Embodiment 1. Figure 17 (A) is identical to Figure 4(A).

[0213] Next, a fifth photolithography step is performed to form a resist mask, and an oxide insulating film 1 Etching of 07 and the protective insulating layer 106 leads to the contact reaching the drain electrode layer 105b To hole 125, contact hole 127 reaching the second terminal 122, connecting electrode 120 A contact hole 126 is formed, removing the resist mask (see Figure 17(B)). . ) .

[0214] Next, a conductive film is deposited, and a sixth photolithography step is performed to form a resist mask. Unnecessary parts are removed by etching to form the connecting electrode layer 196, conductive layer 112, and terminal electrode 1 Form layers 13 and 114, then remove the resist mask (see Figure 17(C)). The conductive film is then formed. Therefore, a metal conductive film can be used, such as the connecting electrode layer 196, the conductive layer 112, and the terminal electrode. Layers 113 and 114 can also be made of metal conductive layers.

[0215] The connecting electrode layer 196 is mainly composed of elements selected from Al, Cr, Cu, Ta, Ti, Mo, and W. A film consisting of a single film, or a laminated film combining such films with an alloy film, can be used. As in this embodiment, the conductive layer 112, terminal electrodes 113, 114 and the connecting electrode layer 196 When formed in the same process, the conductive layer 112 and terminal electrodes 113 and 114 also contain Al, Cr, and Cu. A film mainly composed of elements selected from Ta, Ti, Mo, and W, or an alloy film thereof. A combined multilayer film can be used. The conductive film is not limited to a single layer containing the elements mentioned above. Furthermore, it is possible to use lamination of two or more layers. In addition, the method for depositing the conductive film is sputtering. Methods such as the ion deposition method, vacuum deposition (electron beam deposition, etc.), and arc discharge ion plating, A spray method can be used.

[0216] Next, the seventh to ninth photolithography steps are performed on the protective insulating layer 106 in the pixel area. A RGB color filter layer 191 is formed, and a 10th photolithography process is performed. An overcoat layer 192 is formed to cover the color filter layer 191. Connecting electrode layer 1 96, conductive layer 112, terminal electrodes 113, 114, protective insulating layer 106 and overcoat layer A protective insulating layer 109 is formed by covering 192 (see Figure 17(D)).

[0217] Next, an eleventh photolithography step is performed to form a resist mask and a protective insulating layer 1 By etching 09, a contact hole 125 is formed that reaches the connecting electrode layer 196, Remove the dystomask. Also, etching at this stage will remove the terminal electrodes 113 and 114. The protective insulating layer 109 is also removed, exposing the terminal electrodes 113 and 114 (see Figure 18(A)). ).

[0218] Next, a translucent conductive film is formed, and a 12th photolithography step is performed, and the resist A mask is formed, and unwanted parts are removed by etching to form the first electrode layer 110. Remove the resist mask.

[0219] Similar to Embodiment 1, a 13th photolithography step is performed to form the partition wall 193. An EL layer 194 and a second electrode layer 195 are stacked on a first electrode layer 110 to form a light-emitting element. The light-emitting device of this embodiment is fabricated (see Figure 18(B)).

[0220] When forming the connecting electrode layer 196, the power supply line is made of the same material and uses the same process as the connecting electrode layer 196. It can be formed using the same material and process as the connecting electrode layer 196. It can be formed with.

[0221] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. ru.

[0222] (Embodiment 5) In this embodiment, Figure 1 shows an example where part of the thin-film transistor fabrication process differs from that of Embodiment 1. Figure 0 is shown. Figure 10 is the same as Figures 1 to 5 except that the process is slightly different, so the same part The same symbols are used for the same locations, and detailed explanations of the same locations are omitted.

[0223] First, according to Embodiment 1, a gate electrode layer and a gate insulating layer are formed on the substrate, and the pixel portion In the second photolithography process, a contact hole reaching the gate electrode layer is created. Form (not shown).

[0224] Next, an oxide semiconductor film 130 is formed, and the oxide semiconductor film 130 is subjected to a third photolithography. The process is used to create island-shaped oxide semiconductor layers 131 and 132.

[0225] Next, the oxide semiconductor layers 131 and 132 are dehydrated or dehydrogenated. The temperature of the first heat treatment for hydrogenation is 400°C to 750°C, preferably 425°C. The temperature must be 750°C or lower. However, if the temperature is 425°C or higher, the heat treatment time can be 1 hour or less. However, if the temperature is below 425°C, the heat treatment time should be longer than 1 hour. This involves introducing a substrate into an electric furnace, which is one of the heat treatment devices, and applying a nitrogen atmosphere to the oxide semiconductor layer. After heat treatment under air pressure, water and hydrogen are added to the oxide semiconductor layer without exposure to the atmosphere. This prevents the re-contamination of and obtains an oxide semiconductor layer. After that, high-purity oxygen gas and high-purity [unclear] are placed in the same furnace. Introducing N2O gas or ultra-dry air (with a dew point of -40°C or lower, preferably -60°C or lower) Cooling is performed. It is preferable that the oxygen gas or N2O gas does not contain water, hydrogen, etc. Alternatively, the purity of the oxygen gas or N2O gas introduced into the heat treatment device may be set to 6N (99.9%). 999% or more, preferably 7N (99.99999% or more), (i.e., oxygen gas or N It is preferable to keep the impurity concentration in the 2O gas below 1 ppm, preferably below 0.1 ppm. It seems so.

[0226] Furthermore, the heating apparatus is not limited to electric furnaces; for example, GRTA (Gas Rapid Th) thermal annealing) equipment, LRTA (Lamp Rapid Thermal) Using RTA (Rapid Thermal Anneal) devices such as Anneal devices It is possible to use a LRTA device with halogen lamps, metal halide lamps, and xenon lamps. Arc lamps, carbon arc lamps, high-pressure sodium lamps, high-pressure mercury lamps, etc. This device heats the object being processed by radiating light (electromagnetic waves) from a lamp. Heat conduction or thermal radiation from heat-generating elements such as TA devices, lamps, and resistive heating elements. It may also be equipped with a device for heating the object to be processed. GRTA refers to heating using high-temperature gas. This is a method of processing. The gas can be a noble gas such as argon, or a gas such as nitrogen, which is heated. An inert gas that does not react with the material being processed is used. The RTA method is used at 600°C. You may also heat-treat it at ~750°C for several minutes.

[0227] Furthermore, after the first heat treatment in which dehydration or dehydrogenation is performed, the temperature is preferably between 200°C and 400°C. Alternatively, heating treatment at a temperature between 200°C and 300°C under an oxygen or N2O gas atmosphere. It is permissible to act rationally.

[0228] Furthermore, the first heat treatment of the oxide semiconductor layers 131 and 132 is used to process them into island-shaped oxide semiconductor layers. It can also be performed on the oxide semiconductor film 130 before the first heat treatment. In that case, after the first heat treatment The substrate is then removed from the heating device, and the photolithography process is performed.

[0229] By going through the above process, the entire oxide semiconductor film is made into an oxygen-rich state, The material is converted to type I. Thus, oxide semiconductor layers 168 and 198, all of which are type I, are obtained. ru.

[0230] Next, a resin is applied to the oxide semiconductor layers 168 and 198 by a fourth photolithography process. A stock mask is formed, and selective etching is performed to shape the source electrode layer and drain electrode layer. Then, an oxide insulating film 107 is formed by sputtering.

[0231] Next, in order to reduce variations in the electrical characteristics of thin-film transistors, under an inert gas atmosphere or perform heat treatment under a nitrogen gas atmosphere (preferably 150°C or higher and less than 350°C). Alternatively, a heat treatment may be performed at 250°C for 1 hour under a nitrogen atmosphere.

[0232] Next, a protective insulating layer 106 is formed on the oxide insulating film 107, and the protective insulating layer in the pixel portion A color filter layer 191 is formed on 106. Cover the color filter layer 191. A supercoat layer 192 is formed, covering the protective insulating layer 106 and the supercoat layer 192. A protective insulating layer 109 is formed.

[0233] Next, a ninth photolithography step is performed to form a resist mask and gate insulating layer 1 02. Etching of the oxide insulating film 107, protective insulating layer 106 and protective insulating layer 109 The first terminal 121, the conductive layer 162, the drain electrode layer 105b, and the second terminal 122 are reached. A contact hole is formed. After forming a light-transmitting conductive film, the 10th photolithography is performed. A resist mask is formed by a graphing process, and the first electrode layer is selectively etched. 110, terminal electrode 128, terminal electrode 129, and wiring layer 145 are formed.

[0234] In this embodiment, the connection between the first terminal 121 and the terminal electrode 128 is made via the connecting electrode 120. This is an example of performing the procedure directly without using a wire. Also, the connection between the drain electrode layer 165b and the conductive layer 162 is wired This is done via layer 145.

[0235] Furthermore, in the capacitance section, the capacitance wiring layer 108, gate insulation layer 102, source electrode layer and drain A capacitance 147 is formed by laminating the in electrode layer with a capacitance electrode layer 149 formed in the same process as the in electrode layer. It is.

[0236] Through the above process, the drive circuit section has a thin-film transistor 183 and the pixel section has a thin-film transistor 183 and a pixel section on the same substrate. Thin-film transistor 173 can be fabricated using this method.

[0237] Similar to Embodiment 1, a partition wall 193 is formed, and an EL layer 194 is placed on the first electrode layer 110, and the The light-emitting device of this embodiment, which has a light-emitting element, is fabricated by stacking two electrode layers 195 (Figure 1). (See reference 0.)

[0238] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. ru.

[0239] (Embodiment 6) In this embodiment, in the light-emitting device shown in Embodiments 1 to 5, a thin-film transistor and Using an electroluminescent light-emitting element, an active-matrix type LED This shows an example of how to fabricate a photodisplay device.

[0240] Light-emitting devices that utilize electroluminescence use either organic or inorganic light-emitting materials. They are distinguished by whether they are compounds; generally, the former are organic EL elements, and the latter are inorganic EL elements. It is called

[0241] Organic EL elements emit electrons and holes from a pair of electrodes when a voltage is applied to the light-emitting element. Each of these is injected into a layer containing a luminescent organic compound, and an electric current flows through it. Then, these... The recombination of electrons and holes causes the luminescent organic compound to form an excited state. And when that excited state returns to the ground state, it emits light. From this mechanism, Such light-emitting devices are called current-excited light-emitting devices.

[0242] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0243] Figure 19 shows an example of a pixel configuration to which digital time-gradation driving can be applied as an example of a light-emitting device. This is a diagram.

[0244] This section describes the pixel configuration and operation to which digital time-based gradation driving can be applied. This uses an n-channel transistor with an oxide semiconductor layer as the channel formation region as one pixel. Here are two examples of its use.

[0245] Pixel 6400 consists of a switching transistor 6401, a driving transistor 6402, It has a light-emitting element 6404 and a capacitive element 6403. Switching transistor 64 01 has a gate connected to scan line 6406, and the first electrode (source electrode and drain electrode) The (side) is connected to signal line 6405, and the second electrode (the other of the source electrode and drain electrode) is driven It is connected to the gate of the drive transistor 6402. The drive transistor 6402 is The gate is connected to the power line 6407 via the capacitive element 6403, and the first electrode is connected to the power line 640 It is connected to 7, and the second electrode is connected to the first electrode (pixel electrode) of the light-emitting element 6404. The second electrode of the light-emitting element 6404 corresponds to the common electrode 6408. The common electrode 6408 is identical It is electrically connected to a common potential line formed on the substrate.

[0246] Furthermore, a low power supply potential is set for the second electrode (common electrode 6408) of the light-emitting element 6404. The low power supply potential is defined as the low power supply potential set on power line 6407 relative to the high power supply potential. High power supply potentials are higher than the normal potential, while low power supply potentials include, for example, GND and 0V. It may be set. The potential difference between this high power supply potential and the low power supply potential is marked on the light-emitting element 6404. In addition, in order to make the light-emitting element 6404 emit light by passing current through it, a high power supply is required. The potential difference between the current position and the low power supply potential is set to be greater than or equal to the forward threshold voltage of the light-emitting element 6404. Set the respective potentials.

[0247] Note that the capacitive element 6403 is omitted by substituting the gate capacitance of the drive transistor 6402. This is also possible. Regarding the gate capacitance of the drive transistor 6402, the channel region A capacitance may be formed between the gate electrode and the gate electrode.

[0248] In the case of a voltage input / voltage drive method, the gate of the drive transistor 6402 is: The drive transistor 6402 is either fully on or completely off. The video signal is input. In other words, the driver transistor 6402 is operated in the linear region. The driver transistor 6402 operates in the linear region, therefore the voltage of the power line 6407 is higher than A high voltage is applied to the gate of the drive transistor 6402. The signal line 6405 is connected to... Apply a voltage equal to or greater than (power line voltage + Vth of the drive transistor 6402).

[0249] Furthermore, when using analog gradation drive instead of digital time gradation drive, the signal input is different. By doing so, the same pixel configuration as in Figure 19 can be used.

[0250] When performing analog grayscale driving, the gate of the driving transistor 6402 is connected to the light-emitting element 6404 Apply a voltage equal to or greater than the forward voltage of the drive transistor 6402 + Vth. (Light-emitting element 64) The forward voltage of 04 refers to the voltage required to achieve the desired brightness, and at least the forward voltage is Includes key voltage. Note that the drive transistor 6402 operates in the saturation region. By inputting an O signal, current can be supplied to the light-emitting element 6404. The drive transistor... To operate the 6402 in the saturation region, the potential of the power line 6407 is set to the drive transistor The gate potential of the TA6402 is set higher. By making the video signal analog, the light-emitting element... By supplying current to the 6404 according to the video signal, analog grayscale driving can be performed.

[0251] Note that the pixel configuration shown in Figure 19 is not limited to this. For example, if new pixels are added to the pixels shown in Figure 19... Switches, resistors, capacitives, transistors, or logic circuits may be added to it.

[0252] Next, the configuration of the light-emitting element will be explained using Figure 20. Here, the driving TFT is n The cross-sectional structure of a pixel will be explained using the case of a type as an example. Figure 20(A)(B)(C) The TFTs TFT7001, 7011, and 7021, which are drive TFTs used in light-emitting devices, are implemented It can be fabricated in the same way as the thin-film transistors shown in Forms 1 to 5, and includes an oxide semiconductor layer, providing reliability It is a thin-film transistor with high performance.

[0253] A light-emitting element only needs to have at least one of its electrodes, either the anode or the cathode, transparent in order to extract light. Then, a thin-film transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. An upper surface injection structure that emits light, a lower surface injection structure that extracts light from the substrate side, and the substrate side and the substrate There is a light-emitting element with a double-sided emission structure that extracts light from the opposite side, and the pixel configuration is which emission It can also be applied to light-emitting elements in structures.

[0254] The light-emitting element with a bottom-extrusion structure will be explained using Figure 20(A).

[0255] The driving TFT 7011 is n-type, and the light emitted from the light-emitting element 7012 is directed to the first electrode layer 70 Figure 20(A) shows a cross-sectional view of the pixel when it is ejected to side 13. On a light-transmitting conductive film 7017 electrically connected to 1, the first light-emitting element 7012 An electrode layer 7013 is formed, and an EL layer 7014 and a second electrode layer are formed on the first electrode layer 7013. The polar layers 7015 are stacked in order. The conductive film 7017 is a protective insulating layer 7035, Through contact holes formed in the protective insulating layer 7032 and the oxide insulating layer 7031, It is electrically connected to the drain electrode layer of the dynamic TFT7011.

[0256] The light-transmitting conductive film 7017 includes indium oxide containing tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, indium tin oxide, indium zinc oxide, oxide A transparent conductive film such as indium tin oxide with added inium can be used.

[0257] Furthermore, the first electrode layer 7013 of the light-emitting element can be made of various materials. For example, When electrode layer 7013 is used as the cathode, a material with a small work function is used, specifically, For example, alkali metals such as Li and Cs, and alkaline earth metals such as Mg, Ca, and Sr, And alloys containing these (Mg:Ag, Al:Li, etc.), as well as rare earth metals such as Yb and Er. The genus, etc., is preferred. In Figure 20(A), the thickness of the first electrode layer 7013 is such that it transmits light. (Preferably, about 5 nm to 30 nm). For example, aluminum with a film thickness of 20 nm A um film is used as the first electrode layer 7013.

[0258] Furthermore, after laminating a transparent conductive film and an aluminum film, selective etching is performed. A transparent conductive film 7017 and a first electrode layer 7013 may be formed, in which case, This is preferable because etching can be performed using the same mask.

[0259] Furthermore, the periphery of the first electrode layer 7013 is covered with a partition wall 7019. The partition wall 7019 is made of poly Organic resin films such as mids, acrylics, polyamides, and epoxys, inorganic insulating films, or organic polysilicones Formed using xane. The partition wall 7019 is made using a photosensitive resin material, and the first electrode layer An opening is formed on 7013, and the side walls of the opening are formed with a continuous curvature. It is preferable to form it into a surface. A photosensitive resin material is used as the partition wall 7019. In this case, the step of forming a resist mask can be omitted.

[0260] Furthermore, the EL layer 7014 formed on the first electrode layer 7013 and the partition wall 7019 is at least It is sufficient to include a light-emitting layer, and even if it consists of a single layer, it can be configured so that multiple layers are stacked on top of each other. Either way is fine. If the EL layer 7014 is composed of multiple layers, the cathode and An electron injection layer, electron transport layer, light emission layer, and hole transport layer are placed on the first electrode layer 7013 which functions as an electron injection layer. The layers are stacked in the order of the hole injection layer, and then the hole injection layer. Note that it is not necessary to provide all of these layers.

[0261] Furthermore, the stacking order is not limited to the above, and the first electrode layer 7013 can function as an anode, and the first electrode On the polar layer 7013, there is a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer in that order. They may be stacked. However, when comparing power consumption, the first electrode layer 7013 is used as the cathode. To make it functional, an electron injection layer, an electron transport layer, an emissive layer, a hole transport layer, are placed on the first electrode layer 7013. Stacking the holes in a specific order can suppress the voltage rise in the drive circuit and reduce power consumption. This is preferable because it allows for easy access.

[0262] Furthermore, various materials can be used for the second electrode layer 7015 formed on the EL layer 7014. This is possible. For example, when the second electrode layer 7015 is used as the anode, the work function is large. Materials such as ZrN, Ti, W, Ni, Pt, Cr, etc., and ITO, IZO, ZnO, etc. Which transparent conductive material is preferred? Also, a shielding film 7016 is placed on the second electrode layer 7015, for example For example, a metal that blocks light, a metal that reflects light, etc. are used. In this embodiment, the second electrode layer 7 ITO film is used as 015, and Ti film is used as the shielding film 7016.

[0263] The first electrode layer 7013 and the second electrode layer 7015 sandwich the EL layer 7014 which includes the light-emitting layer. The region corresponds to the light-emitting element 7012. In the case of the element structure shown in Figure 20(A), light emission The light emitted from element 7012 is directed toward the first electrode layer 7013, as indicated by the arrow. It passes through the color filter layer 7033 and is emitted to the outside.

[0264] The color filter layer 7033 is used in droplet ejection methods such as inkjet printing, as well as in photolithography. These are formed using etching methods employing graphic technology.

[0265] Furthermore, the color filter layer 7033 is covered with an overcoat layer 7034, providing additional protective insulation. It is covered by layer 7035. Note that in Figure 20(A), the overcoat layer 7034 is a thin film. As illustrated, the overcoat layer 7034 has irregularities caused by the color filter layer 7033. It has the function of flattening.

[0266] Next, a light-emitting element with a double-sided injection structure will be explained using Figure 20(B).

[0267] Figure 20(B) shows a translucent conductive film 7 electrically connected to the driving TFT 7021. A first electrode layer 7023 of the light-emitting element 7022 is formed on 027, and the first electrode layer An EL layer 7024 and a second electrode layer 7025 are sequentially stacked on top of 7023. The film 7027 is formed in protective insulating layer 7045, protective insulating layer 7042, and oxide insulating layer 7041. The drain electrode layer of the drive TFT7021 is electrically connected through the contact hole. It continues.

[0268] The transparent conductive film 7027 includes indium oxide containing tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, indium tin oxide, indium zinc oxide, oxide A transparent conductive film such as indium tin oxide with added inium can be used.

[0269] Furthermore, the first electrode layer 7023 can be made of various materials. For example, the first electrode layer When using 7023 as the cathode, a material with a small work function is preferred, specifically, for example, Li or Alkali metals such as Cs, and alkaline earth metals such as Mg, Ca, Sr, and these In addition to alloys containing Mg:Ag, Al:Li, etc., rare earth metals such as Yb and Er are preferred. In this embodiment, the first electrode layer 7023 is used as the cathode, and its film thickness is such that it transmits light. The thickness should be such that (preferably around 5 nm to 30 nm). For example, a film thickness of 20 nm A luminium film is used as the cathode.

[0270] Furthermore, after laminating a transparent conductive film and an aluminum film, selective etching is performed. A transparent conductive film 7027 and a first electrode layer 7023 may be formed, in which case, Etching can be performed using the same mask, which is preferable.

[0271] Furthermore, the periphery of the first electrode layer 7023 is covered with a partition wall 7029. The partition wall 7029 is made of poly Organic resin films such as mids, acrylics, polyamides, and epoxys, inorganic insulating films, or organic polysilicones Formed using xane. The partition wall 7029 is made using a photosensitive resin material, and the first electrode layer An opening is formed on 7023, and the side walls of the opening are formed with a continuous curvature. It is preferable to form it into a surface. A photosensitive resin material is used as the partition wall 7029. In this case, the step of forming a resist mask can be omitted.

[0272] Furthermore, the EL layer 7024 formed on the first electrode layer 7023 and the partition wall 7029 is a light-emitting layer It is sufficient to include it, and even if it consists of a single layer, it is configured so that multiple layers are stacked on top of each other. Either is fine. If the EL layer 7024 is composed of multiple layers, it will function as a cathode. An electron injection layer, an electron transport layer, an electron emission layer, a hole transport layer, and a hole injection layer are placed on the first electrode layer 7023. The layers are stacked in the order they appear. Note that it is not necessary to include all of these layers.

[0273] Furthermore, the stacking order is not limited to the above, and the first electrode layer 7023 may be used as the anode, and a hose may be placed on the anode. The layers may be stacked in the following order: hole injection layer, hole transport layer, light emission layer, electron transport layer, and electron injection layer. When comparing power consumption, the first electrode layer 7023 is used as the cathode, and electron injection is performed on the cathode. Layering the layers in the order of ingress layer, electron transport layer, light-emitting layer, hole transport layer, and hole injection layer consumes less power. It is preferable because it is less.

[0274] Furthermore, various materials can be used for the second electrode layer 7025 formed on the EL layer 7024. This is possible. For example, when the second electrode layer 7025 is used as the anode, the work function is large. It is preferable to use transparent conductive materials such as ITO, IZO, and ZnO. Yes, it is possible. In this embodiment, the second electrode layer 7025 is used as the anode, and silicon dioxide is included in I Forms a TO film.

[0275] The first electrode layer 7023 and the second electrode layer 7025 sandwich the EL layer 7024 which includes the light-emitting layer. The region corresponds to the light-emitting element 7022. In the case of the element structure shown in Figure 20(B), light emission The light emitted from element 7022 is directed towards the second electrode layer 7025 and the first electrode layer, as indicated by the arrows. Inject into both sides of the polar layer 7023.

[0276] The color filter layer 7043 is used in droplet ejection methods such as inkjet printing, as well as in photolithography. These are formed using etching methods employing graphic technology.

[0277] Furthermore, the color filter layer 7043 is covered with an overcoat layer 7044, providing additional protection and insulation. It is covered by layer 7045.

[0278] However, when using a double-sided injection-type light-emitting element and both display surfaces are to display in full color, Since the light from the second electrode layer 7025 does not pass through the color filter layer 7043, a separate color filter is required. It is preferable to provide a sealing substrate with a filter layer above the second electrode layer 7025.

[0279] Next, the light-emitting element with an upper surface injection structure will be explained using Figure 20(C).

[0280] Figure 20(C) shows that the driving TFT, TFT7001, is of n type, and the light-emitting element 7002 emits Figure 20(C) shows a cross-sectional view of the pixel when the light being emitted passes through to the second electrode layer 7005. ) In this case, the first electrode layer 7003 of the light-emitting element 7002 is electrically connected to the TFT 7001. A first electrode layer 7003 has an EL layer 7004 and a second electrode layer 7005 on it. They are stacked in order.

[0281] Furthermore, the first electrode layer 7003 can be made of various materials. For example, the first electrode layer When using 7003 as the cathode, a material with a small work function is preferred, specifically, for example, Li or Alkali metals such as Cs, and alkaline earth metals such as Mg, Ca, Sr, and these In addition to alloys containing Mg:Ag, Al:Li, etc., rare earth metals such as Yb and Er are preferred. .

[0282] Furthermore, the periphery of the first electrode layer 7003 is covered with a partition wall 7009. The partition wall 7009 is made of poly Organic resin films such as mids, acrylics, polyamides, and epoxys, inorganic insulating films, or organic polysilicones Formed using xane. The partition wall 7009 is made using a photosensitive resin material, and the first electrode layer An opening is formed on 7003, and the side walls of the opening are formed with a continuous curvature. It is preferable to form it into a surface. A photosensitive resin material is used as the partition wall 7009. In this case, the step of forming a resist mask can be omitted.

[0283] Furthermore, the EL layer 7004 formed on the first electrode layer 7003 and the partition wall 7009 is at least It is sufficient to include a light-emitting layer, and even if it consists of a single layer, it can be configured so that multiple layers are stacked on top of each other. Either way is fine. If the EL layer 7004 is composed of multiple layers, the cathode and An electron injection layer, an electron transport layer, an emissive layer, a hole transport layer, and a first electrode layer 7003 used for this purpose are placed on top of the first electrode layer 7003. The layers are stacked in the order of the hole injection layers. Note that it is not necessary to provide all of these layers.

[0284] Furthermore, the stacking order is not limited to the above, and holes are injected onto the first electrode layer 7003 used as the anode. The layers may be stacked in the following order: layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer.

[0285] Figure 20(C) shows a layered film consisting of a Ti film, an aluminum film, and another Ti film, onto which a hole injection is applied. The layers are stacked in the following order: indentation layer, hole transport layer, light emission layer, electron transport layer, and electron injection layer, with Mg:A on top of them. A layered structure is formed between a g alloy thin film and an ITO film.

[0286] However, if the TFT7001 is n-type, an electron injection layer and an electron transport layer are placed on the first electrode layer 7003. Stacking the layers in the order of light-emitting layer, hole transport layer, and hole injection layer results in a higher voltage in the drive circuit. This is preferable because it can suppress the rise and reduce power consumption.

[0287] The second electrode layer 7005 is formed using a light-transmitting conductive material, for example, Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium Indium tin oxide, indium zinc oxide, indium tin oxide with added silicon dioxide, etc. A conductive film with light-transmitting properties may also be used.

[0288] The EL layer 7004, which includes the light-emitting layer, is sandwiched between the first electrode layer 7003 and the second electrode layer 7005. The area where it is located corresponds to the light-emitting element 7002. In the case of the pixel shown in Figure 20(C), the light-emitting element 7 The light emitted from 002 is directed toward the second electrode layer 7005, as indicated by the arrow.

[0289] Furthermore, in Figure 20(C), the drain electrode layer of TFT7001 is the oxide insulating layer 705 1. Through contact holes formed in protective insulating layer 7052 and protective insulating layer 7055 The first electrode layer 7003 is electrically connected. The planar insulating layer 7053 is made of polyimide, acrylic acid. Resin materials such as lyl, benzocyclobutene, polyamide, and epoxy can be used. In addition to the resin materials mentioned above, low dielectric constant materials (low-k materials), siloxane-based resins, and PSG are also available. (Phosphorus glass), BPSG (Phosphorus Boron glass), etc. can be used. Even when multiple insulating films made of the same material are stacked, a planar insulating layer 7053 is formed. Good. The method for forming the planar insulating layer 7053 is not particularly limited, and depending on the material, sputtering Ring method, SOG method, spin coating, dip coating, spray coating, droplet ejection (inkjet) (Printing methods such as screen printing and offset printing), doctor knife, roll coater, car Ten coaters, knife coaters, etc., can be used.

[0290] Furthermore, partitions 7 are provided to insulate the first electrode layer 7003 from the first electrode layer of the adjacent pixel. A partition wall 7009 is provided. The partition wall 7009 is made of polyimide, acrylic, polyamide, epoxy, etc. It is formed using a resin film, an inorganic insulating film, or an organic polysiloxane. The partition wall 7009 is special A photosensitive resin material is used, and an opening is formed on the first electrode layer 7003, and the side of the opening It is preferable to form the wall so that it forms an inclined surface with a continuous curvature. Partition wall When using a photosensitive resin material as 7009, the step of forming a resist mask is omitted. It is possible.

[0291] Furthermore, in the structure shown in Figure 20(C), when full-color display is performed, for example, the light-emitting element 70 02 is a green light-emitting element, one of the adjacent light-emitting elements is a red light-emitting element, and the other light-emitting element The element will be a blue light-emitting element. In addition to the three types of light-emitting elements, a white element will be added, making a total of four types. A light-emitting device capable of full-color display may be manufactured using light-emitting elements.

[0292] Furthermore, in the structure shown in Figure 20(C), all of the multiple light-emitting elements to be arranged are white light-emitting elements. The configuration involves placing a sealing substrate having a color filter or the like above the light-emitting element 7002. A light-emitting device capable of full-color display may be manufactured. By forming a material and combining it with color filters and color conversion layers, full-color display is achieved. It is possible.

[0293] Figures 20(A) to (C) show examples where the thin-film transistor and the first electrode layer are in direct contact. This shows that, as in Embodiment 4, the drain electrode layer of the thin-film transistor and the first electrode layer A configuration in which a connecting electrode layer is interposed between them for electrical connection is also possible. 1, 7011, and 7021 are thin films as shown in Embodiments 2, 3, and 5. Transistors can also be used.

[0294] Of course, single-color illumination may also be used. For example, a lighting device can be formed using white light. Alternatively, a monochromatic light emission may be used to form an area-color type light-emitting device.

[0295] Furthermore, if necessary, optical films such as polarizing films, including circular polarizers, may be provided.

[0296] Here, we have discussed organic EL elements as light-emitting elements, but inorganic EL elements can also be used as light-emitting elements. It is also possible to incorporate an L element.

[0297] Furthermore, the thin-film transistor (driving TFT) that controls the driving of the light-emitting element and the light-emitting element are electrically connected. An example of connection was shown, but a current control TFT is connected between the driving TFT and the light-emitting element. It may be a continuation of the same configuration.

[0298] This embodiment can be combined with other embodiments as appropriate.

[0299] (Embodiment 7) In this embodiment, an example of the element structure of the light-emitting element shown in Embodiments 1 to 6 will be described. do.

[0300] The element structure shown in Figure 21(A) consists of a pair of electrodes (first electrode 1001, second electrode 1002 ) has a structure in which an EL layer 1003 including a light-emitting region is sandwiched between them. In explaining the state, as an example, the first electrode 1001 is used as the anode, and the second electrode 10 O2 shall be used as the cathode.

[0301] Furthermore, the EL layer 1003 only needs to include at least an emissive layer, and other than the emissive layer... It may also be a laminated structure including a functional layer. The functional layer other than the light-emitting layer may have high hole injection properties. Materials with high hole transport, materials with high electron transport, materials with high electron injection, bipods A layer containing a material with high electron and hole transport properties (a material with high electron and hole transport properties) can be used. In terms of structure, functional layers such as hole injection layers, hole transport layers, electron transport layers, and electron injection layers are appropriately combined. It can be used in this way.

[0302] The light-emitting element shown in Figure 21(A) is generated between the first electrode 1001 and the second electrode 1002. The potential difference causes an electric current to flow, and holes and electrons recombine in the EL layer 1003, causing it to emit light. This means that the EL layer 1003 is configured to form an luminescent region.

[0303] The light is emitted through either the first electrode 1001 or the second electrode 1002, or both. And it is taken out to the outside. Therefore, either the first electrode 1001 or the second electrode 1002 One or both of them are made of a translucent material.

[0304] Furthermore, the EL layer is located between the first electrode 1001 and the second electrode 1002, as shown in Figure 21(B). Multiple layers are acceptable. In the case of a stacked structure with n (where n is a natural number greater than or equal to 2) layers, Between the m-th EL layer (where m is a natural number and m is between 1 and n-1 inclusive) and the (m+1)th EL layer It is preferable to provide a charge generation layer 1004 in between each layer.

[0305] The charge generation layer 1004 is a composite material of an organic compound and a metal oxide, a metal oxide, an organic compound and Alkali metals, alkaline earth metals, or composite materials of these, as well as suitable materials They can be formed by combining as appropriate. Examples of composite materials of organic compounds and metal oxides include For example, it includes organic compounds and metal oxides such as V2O5, MoO3, and WO3. For example, aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, polymer compounds (oligo Various compounds can be used, such as gomers, dendrimers, polymers, etc. As an organic compound, it is a hole-transporting organic compound with a hole mobility of 10 -6 cm 2 / Vs or later It is preferable to apply the above. However, the material must have higher hole transport than electron transport. If so, other materials may be used. Because the material has excellent carrier injection and carrier transport properties, it is suitable for low-current driving of light-emitting elements and This enables low-voltage operation.

[0306] Furthermore, the charge generation layer 1004 is a composite material of an organic compound and a metal oxide, combined with other materials. They may be formed together. For example, a layer containing a composite material of an organic compound and a metal oxide, and an electron A layer containing one compound selected from among the donating substances and a compound with high electron transport properties is combined. They may also be formed by combining them. Alternatively, a layer containing a composite material of an organic compound and a metal oxide, and a transparent conductive film. They may be formed by combining them.

[0307] Light-emitting elements with this configuration are less prone to problems such as energy transfer and quenching. By expanding the range of material choices, it is possible to create light-emitting elements that combine high luminous efficiency and long lifespan. This is easy. Furthermore, it is also easy to obtain phosphorescence emission in one EL layer and fluorescence emission in the other. .

[0308] The charge generation layer 1004 is formed by applying a voltage to the first electrode 1001 and the second electrode 1002. When this happens, holes are formed in one of the EL layers 1003 that are in contact with the charge generation layer 1004. It has the function of injecting electrons into the other EL layer 1003.

[0309] The light-emitting elements shown in Figure 21(B) can be varied by changing the type of light-emitting material used in the light-emitting layer. A variety of emission colors can be obtained. Furthermore, by using multiple emission materials with different emission colors as the emission material... By doing so, it is possible to obtain emission with a broad spectrum or white light emission.

[0310] When obtaining white light emission using the light-emitting element shown in Figure 21(B), a combination of multiple light-emitting layers is used. The configuration should include red, blue, and green light, and emit white light. For example, blue A first EL layer containing a fluorescent material as a light-emitting substance, and a first EL layer containing green and red phosphorescent materials as light-emitting substances One example is a configuration having a second EL layer which includes a first EL layer which emits red light. The structure includes a second EL layer that emits green light and a third EL layer that emits blue light. It is also possible to have a configuration that has a light-emitting layer that emits light of complementary colors, even if white Color emission is obtained. In a stacked element in which two EL layers are stacked, obtained from the first EL layer When the emission color of the emitted light and the emission color of the light obtained from the second EL layer are in a complementary color relationship, Examples of color relationships include blue and yellow, or blue-green and red.

[0311] Furthermore, in the configuration of the stacked element described above, a charge generation layer is placed between the stacked EL layers. By doing so, it is possible to achieve long-life elements in the high-brightness region while keeping the current density low. Yes, it is possible. Furthermore, the voltage drop due to the resistance of the electrode material can be reduced, resulting in uniform light emission over a large area. This becomes possible.

[0312] This embodiment can be appropriately combined with the configurations described in other embodiments.

[0313] (Embodiment 8) In this embodiment, the external appearance and cross-section of the light-emitting display panel (also called a light-emitting panel) are shown in Figure This will be explained using Figure 22. Figure 22(A) shows a thin-film transistor formed on the first substrate. This is a plan view of a panel in which a light-emitting element is sealed between a second substrate and a sealing material. Figure 22(B) corresponds to the cross-sectional view at HI in Figure 22(A).

[0314] Pixel section 4502, signal line driving circuit 4503a, 450 provided on the first substrate 4501 3b, and the scan line drive circuits 4504a and 4504b are surrounded by a sealing material 4505 A pixel unit 4502, signal line driving circuits 4503a, 4503b, and A second substrate 4506 is provided on top of the scan line driving circuits 4504a and 4504b. The pixel section 4502, signal line driving circuits 4503a, 4503b, and scan line driving circuit 45 04a and 4504b consist of a first substrate 4501, a sealing material 4505, and a second substrate 4506. It is sealed together with the filler 4507. Highly dense protective film with minimal degassing (laminated film, UV-curing resin film) It is preferable to package (seal) the product with a cover material such as a linoleum.

[0315] Also provided on the first substrate 4501 are the pixel section 4502, the signal line driving circuit 4503a, 4 503b, and the scan line driving circuits 4504a and 4504b have multiple thin-film transistors. In Figure 22(B), the thin-film transistor 4510 included in the pixel section 4502 and the signal The thin-film transistor 4509 included in the wire drive circuit 4503a is shown as an example.

[0316] Thin-film transistors 4509 and 4510 have an oxide semiconductor layer as shown in Embodiments 1 to 5. Highly reliable thin-film transistors can be applied. Thin-film transistors for drive circuits As for STA 4509, the thin-film transistors 180, 181 shown in Embodiments 1 to 5, 182. For the pixel thin-film transistor 4510, thin-film transistors 170 and 171 , 172 can be used. In this embodiment, thin-film transistors 4509, 4 The 510 is an n-channel thin-film transistor.

[0317] On the insulating layer 4544, the oxide semiconductor layer of the thin-film transistor 4509 for the drive circuit A conductive layer 4540 is provided in a position that overlaps with the channel formation region. The conductive layer 4540 is oxidized. By placing it in a position that overlaps with the channel formation region of the semiconductor layer, before and after BT testing This can reduce the change in the threshold voltage of the thin-film transistor 4509. The potential of the electrode layer 4540 may be the same as that of the gate electrode layer of the thin-film transistor 4509, or it may be different. It may also function as a second gate electrode layer. The potential of 540 may be GND, 0V, or floating.

[0318] Although not shown in the diagram, between the oxide insulating layer 4542 and the insulating layer 4544, as shown in Embodiment 1. A protective insulating layer 106 may be provided.

[0319] Furthermore, the thin-film transistor 4510 is electrically connected to the first electrode layer 4517.

[0320] The oxide insulating layer 4542 is made of the same materials and is prepared using the same methods as the oxide insulating film 107 shown in Embodiment 1. That's how you should form it.

[0321] The color filter layer 4545 overlaps with the light-emitting region of the light-emitting element 4511, and the oxide insulating layer It is formed on 4542.

[0322] Furthermore, it functions as a planarizing insulating film to reduce surface irregularities of the color filter layer 4545. It is constructed by covering it with an overcoat layer 4543.

[0323] Furthermore, an insulating layer 4544 is formed on the overcoat layer 4543. Insulating layer 4544 This can be formed using the same materials and methods as the protective insulating layer 109 shown in Embodiment 1.

[0324] Furthermore, 4511 corresponds to a light-emitting element, and the first electrode layer is the pixel electrode of the light-emitting element 4511. 4517 is electrically connected to the source electrode layer or drain electrode layer of thin-film transistor 4510. They are connected. The configuration of the light-emitting element 4511 is a first electrode layer 4517 and an electroluminescent layer 45 12. The stacked structure of the second electrode layer 4513 is shown, but is not limited to the configuration shown. The configuration of the light-emitting element 4511 should be changed as appropriate to match the direction of the light extracted from 511. It is possible.

[0325] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, using a photosensitive material, an opening is formed on the first electrode layer 4517, and the side wall of the opening It is preferable to form it so that it becomes an inclined surface with a continuous curvature.

[0326] Even if the electroluminescent layer 4512 consists of a single layer, it is configured to be stacked with multiple layers. It's fine either way.

[0327] To prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting element 4511, the second electrode layer A protective film may be formed on 4513 and the partition wall 4520. The protective film may be a silicon nitride film. It can form silicon nitride oxide films, DLC films, and the like.

[0328] Also, signal line drive circuits 4503a, 4503b and scan line drive circuits 4504a, 4504b The various signals and potentials applied to the pixel section 4502 are FPC4518a, 4518 It is supplied by b.

[0329] Is the connection terminal electrode 4515 made of the same conductive film as the first electrode layer 4517 of the light-emitting element 4511? The terminal electrode 4516 is formed from the source electrode layer and drain of the thin-film transistor 4509. It is formed from the same conductive film as the electrode layer.

[0330] The connecting terminal electrode 4515 is connected to the terminal of FPC4518a via the anisotropic conductive film 4519. They are electrically connected.

[0331] The substrate located in the direction of light extraction from the light-emitting element 4511 is a second substrate that is not light-transmitting. It must be. In that case, glass plate, plastic plate, polyester film or This uses a light-transmitting material such as acrylic film.

[0332] Furthermore, in addition to inert gases such as nitrogen and argon, UV-curable resin can also be used as the filler 4507. Oils or thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV A (ethylene vinyl acetate) can be used. For example, nitrogen can be used as a filler. That's all you need to do.

[0333] Furthermore, if necessary, a polarizing plate or circular polarizing plate (including elliptical polarizing plate) may be placed on the emission surface of the light-emitting element. You may also appropriately incorporate optical films such as phase difference plates (λ / 4 plate, λ / 2 plate) and color filters. Furthermore, an anti-reflective coating may be provided on the polarizing plate or circular polarizing plate. For example, by the surface irregularities An anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0334] The signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b are Drive turns formed by a single-crystal semiconductor film or polycrystalline semiconductor film on a separately prepared substrate It may be implemented in the circuit. Also, only the signal line drive circuit, or part of it, or the scan line drive circuit The road may be formed separately or partially, and the configuration is not limited to that shown in Figure 22.

[0335] Through the above process, a highly reliable light-emitting device (display panel) can be manufactured as a semiconductor device. It is possible.

[0336] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0337] (Embodiment 9) In this embodiment, at least a part of the drive circuit and a thin film to be placed in the pixel area are placed on the same substrate. An example of how to fabricate a lunger is described below.

[0338] The thin-film transistors placed in the pixel area are formed according to Embodiments 1 to 5. Since the thin-film transistors shown in embodiments 1 to 5 are n-channel TFTs, the driving circuit Of these, a portion of the driving circuit that can be constructed with an n-channel TFT is a thin-film transistor in the pixel area. It is formed on the same substrate as the zista.

[0339] An example of a block diagram of an active-matrix display device is shown in Figure 12(A). On the substrate 5300 are a pixel section 5301, a first scan line drive circuit 5302, and a second scan line drive circuit. It has a motion circuit 5303 and a signal line drive circuit 5304. The pixel section 5301 has multiple signal lines The signal line drive circuit 5304 extends and is arranged, and multiple scan lines are connected to the first scan line drive circuit 5302, and the second scan line drive circuit 5303 are arranged as extensions. In the intersection region of the signal line, pixels, each having a display element, are arranged in a matrix. Furthermore, the substrate 5300 of the display device is FPC (Flexible Printed Circuit Board). The timing control circuit 5305 (controller, control I) is connected via a connection part such as rcuit. (Also known as C) It is connected.

[0340] Figure 12(A) shows the first scan line drive circuit 5302, the second scan line drive circuit 5303, and The line drive circuit 5304 is formed on the same substrate 5300 as the pixel section 5301. Furthermore, since the number of external components such as drive circuits is reduced, costs can be lowered. Furthermore, when a drive circuit is provided outside the circuit board 5300, extending the wiring at the connection point can cause problems. This can reduce the number of connections, leading to improved reliability or yield.

[0341] The timing control circuit 5305 is, for example, related to the first scan line drive circuit 5302. The first scan line drive circuit start signal (GSP1), the scan line drive circuit clock signal (GCLK1) is supplied. The timing control circuit 5305 also supplies the second scan line drive cycle. For example, for track 5303, the start signal (GSP2) for the second scan line drive circuit (S Also called a tart pulse, it supplies the clock signal (GCLK2) for the scan line drive circuit. The timing control circuit 5305 sends a start signal for the signal line drive circuit 5304 to the signal line drive circuit 5304. Signal pin (SSP), clock signal for signal line drive circuit (SCLK), data for video signal (DA) The TA (also simply called the video signal) and the latch signal (LAT) shall be supplied. Each clock signal may be multiple clock signals with different periods, or the clock signal may be inverted. It may also be supplied together with the signal (CKB). It is possible to omit either the path 5302 or the second scan line drive circuit 5303.

[0342] In Figure 12(B), a circuit with a low drive frequency (for example, the first scan line drive circuit 5302, the second The scan line driving circuit 5303 is formed on the same substrate 5300 as the pixel section 5301, and the signal line driving This shows a configuration in which the dynamic circuit 5304 is formed on a separate substrate from the pixel section 5301. Due to its configuration, it exhibits a lower field-effect mobility compared to transistors using single-crystal semiconductors. A drive circuit can be formed on the substrate 5300 using film transistors. Therefore, it is possible to increase the size of the display device, reduce costs, or improve yield. ru.

[0343] Furthermore, the thin-film transistors shown in Embodiments 1 to 5 are n-channel type TFTs. Figure 1 Figures 3(A) and 13(B) show the configuration and operation of a signal line driving circuit composed of n-channel TFTs. I will explain this by giving an example.

[0344] The signal line driving circuit includes a shift register 5601 and a switching circuit 5602. Switching circuit 5602 is a switching circuit 5602_1~5602_N (where N is natural). It has multiple circuits, each of which is called a number. Switching circuits 5602_1 to 5602_N are, , multiple transistors called thin-film transistors 5603_1~5603_k (where k is a natural number) It has a thin-film transistor 5603_1~5603_k which is an n-channel type TFT. Let me explain an example.

[0345] The connection relationships of the signal line drive circuit will be explained using the switching circuit 5602_1 as an example. The first terminals of thin-film transistors 5603_1 to 5603_k are connected to wiring 5604_1, respectively. Connected to ~5604_k. Second terminal of thin-film transistor 5603_1~5603_k These are connected to signal lines S1~Sk, respectively. Thin-film transistors 5603_1~5603_ The gate of k is connected to wiring 5605_1.

[0346] The shift register 5601 sequentially supplies high levels (high signals) to the wiring 5605_1 to 5605_N. It outputs a signal at a high power supply potential level, also known as the switching circuit 5602_1~56 It has the function of selecting 02_N in order.

[0347] Switching circuit 5602_1 consists of wiring 5604_1~5604_k and signal lines S1~Sk A function to control the conductivity state (conduction between the first terminal and the second terminal), i.e., wiring 5604_ It has a function to control whether or not to supply potentials between 1 and 5604k to signal lines S1 and Sk. Thus, the switching circuit 5602_1 functions as a selector. The film transistors 5603_1 to 5603_k are connected to wiring 5604_1 to 5604_k, respectively. A function to control the continuity state between this and the signal lines S1~Sk, i.e., wiring 5604_1~5604_k It has the function of supplying the potential to the signal lines S1~Sk. Thus, thin-film transistor 56 Each of the 03_1 to 5603_k functions as a switch.

[0348] Note that wiring 5604_1 to 5604_k each contain video signal data (DATA). The input is video signal data (DATA), which is image information or analog corresponding to the image signal. It is often a G signal.

[0349] Next, regarding the operation of the signal line drive circuit in Figure 13(A), see the timing chart in Figure 13(B). Refer to the explanation. Figure 13(B) shows signals Sout_1 to Sout_N, and signals An example of Vdata_1 to Vdata_k is shown. Signals Sout_1 to Sout_N are each The following is an example of the output signals of the shift register 5601, with signals Vdata_1 to Vdata _k represents an example of a signal input to wiring 5604_1~5604_k. One operating period of the signal line drive circuit corresponds to one gate selection period in the display device. The selection period is divided into, for example, periods T1 to TN. Periods T1 to TN are each , a period for writing video signal data (DATA) to pixels belonging to the selected row be.

[0350] Note that the signal waveform distortions, etc., of each configuration shown in the drawings, etc. of this embodiment are for clarity. The figures may be exaggerated for aesthetic reasons. Therefore, they are not necessarily limited to that scale. It should be noted that...

[0351] During periods T1 to TN, the shift register 5601 receives a high-level signal via wiring 560 Outputs are sent sequentially from 5_1 to 5605_N. For example, during period T1, shift register 5 601 outputs a high-level signal to wiring 5605_1. Then the thin-film transistor... Since 5603_1~5603_k will be turned on, the wiring 5604_1~5604_k and signal Lines S1 to Sk become conductive. At this time, wiring 5604_1 to 5604_k are Data(S1) to Data(Sk) are entered. Each of these belongs to the selected row via thin-film transistors 5603_1 to 5603_k. Of the pixels, the data is written to the pixels in columns 1 through k. In this way, during the period T1 to TN... Then, the video signal data (DATA) is sequentially placed in k columns for each pixel belonging to the selected row. It will be written.

[0352] As described above, video signal data (DATA) is written to pixels in multiple columns. This allows for a reduction in the number of video signal data (DATA) or the number of wires. Therefore, the number of connections to external circuits can be reduced. Also, the video signal is displayed in multiple columns. By writing directly, the writing time can be extended, and the video signal can be written. This can prevent overcrowding and under-concentration.

[0353] Note that the shift register 5601 and the switching circuit 5602 are as described in Embodiment 1. It is possible to use a circuit composed of thin-film transistors as shown in section 5.

[0354] A form of shift register used in part of a scan line drive circuit and / or signal line drive circuit. This will be explained using Figures 14 and 15.

[0355] The scan line drive circuit has a shift register. In some cases, it also has a level shifter or a bar It may have a ff, etc. In a scan line driving circuit, a clock signal is input to the shift register. A selection signal is generated when the (CLK) and start pulse signal (SP) are input. The generated selection signal is buffered and amplified in a buffer and supplied to the corresponding scan line. The scan line is connected to the gate electrode of the transistor for one pixel line. Therefore, the transistors of the pixels for one line must be turned ON all at once, so buff A component capable of carrying a large current is used.

[0356] The shift register consists of the first pulse output circuit 10_1 to the Nth pulse output circuit 10_N( N is a natural number greater than or equal to 3 (see Figure 14(A)). The shift rate shown in Figure 14(A) The first pulse output circuit 10_1 to the Nth pulse output circuit 10_N of the ZISTA are: The first clock signal CK1 is transmitted from wiring 11, and the second clock signal CK2 is transmitted from the second wiring 12. The third clock signal CK3 is transmitted from the third wire 13, and the fourth clock signal is transmitted from the fourth wire 14. CK4 is supplied. Also, in the first pulse output circuit 10_1, from the fifth wiring 15 The start pulse SP1 (the first start pulse) is input. Also, the nth pulse from the second stage onward In the pulse output circuit 10_n (where n is a natural number between 2 and N), the pulse output cycle of the preceding stage The signal from path 10_n-1 (called the preceding signal OUT(n-1)) (a natural number between n and 2) The input is received. Also, in the first pulse output circuit 10_1, the third pulse output circuit is two stages later. The signal from 10_3 is input. Similarly, the nth pulse output circuit 10_n from the second stage onward. So, the signal from the (n+2)th pulse output circuit 10_(n+2) of the second stage (the subsequent stage signal) An input called OUT(n+2) is received. Therefore, from the pulse output circuit of each stage, the subsequent stage and A first output signal (OUT(1)(SR)) for input to the preceding pulse output circuit. )~OUT(N)(SR)), a second output signal (OUT(1)~ that is input to another circuit, etc. OUT(N)) is output. Note that, as shown in Figure 14(A), the last shift register Since the subsequent signal OUT(n+2) is not input to the two stages of the stage, as an example, The configuration involves inputting a second start pulse SP2 and a third start pulse SP3. That's all you need to do.

[0357] The clock signal (CK) alternates between high and low levels (L signal, low power supply potential) at regular intervals. This is a signal that repeats the same values ​​(also called the level). Here, the first clock signal (CK1) to the second... The four clock signals (CK4) are sequentially delayed by 1 / 4 period (i.e., 90 to each other). °The phase is shifted). In this embodiment, the first clock signal (CK1) to the fourth clock signal The clock signal (CK4) is used to control the drive of the pulse output circuit, etc. The signal may be GCK or SCK depending on the input drive circuit, but here it is C I will explain using the term K.

[0358] Figure 14(B) shows one of the pulse output circuits 10_1 to 10_N shown in Figure 14(A). The first input terminal 21, the second input terminal 22, and the third input terminal 23 are connected to the first wiring 11~ It is electrically connected to one of the fourth wires 14. For example, in Figure 14(A), The first pulse output circuit 10_1 has a first input terminal 21 that is electrically connected to the first wiring 11. The second input terminal 22 is electrically connected to the second wiring 12, and the third input terminal 23 is It is electrically connected to the third wiring 13. Also, the second pulse output circuit 10_2 is Input terminal 21 is electrically connected to the second wiring 12, and input terminal 22 is connected to the third wiring The third input terminal 23 is electrically connected to the fourth wiring 14, and the third input terminal 23 is electrically connected to the fourth wiring 14. Yes, they are.

[0359] Each of the first pulse output circuits 10_1 to the Nth pulse output circuits 10_N has a first input terminal Child 21, second input terminal 22, third input terminal 23, fourth input terminal 24, fifth input terminal Assume that it has a child 25, a first output terminal 26, and a second output terminal 27 (see Figure 14(B)). (See). In the first pulse output circuit 10_1, the first clock signal is connected to the first input terminal 21. When signal CK1 is input, the second clock signal CK2 is input to the second input terminal 22, and the third The third clock signal CK3 is input to input terminal 23, and the start signal is input to the fourth input terminal 24. A pulse is input, and the subsequent signal OUT(3) is input to the 5th input terminal 25, and the 1st output The first output signal OUT(1)(SR) is output from terminal 26, and the second output terminal 27 This indicates that the second output signal, OUT(1), is being output.

[0360] The first pulse output circuit 10_1 to the Nth pulse output circuit 10_N are 3-terminal thin film In addition to transistors (also known as TFT: Thin Film Transistors), The four-terminal thin-film transistor described in the embodiment can be used. In this book, when a thin-film transistor has two gate electrodes separated by a semiconductor layer, A gate electrode below the body layer is called the lower gate electrode, and a gate electrode above the semiconductor layer is called the upper gate electrode. It is also called the gate electrode of the right side.

[0361] When oxide semiconductors are used in the semiconductor layer including the channel formation region of a thin-film transistor, manufacturing Depending on the process, the threshold voltage may shift to the negative or positive side. Therefore, in thin-film transistors that use oxide semiconductors in the semiconductor layer including the channel formation region, A configuration that allows control of the threshold voltage is preferred. The threshold voltage is determined by controlling the potential of the upper and / or lower gate electrodes. It can be controlled by a value.

[0362] Next, let's look at an example of a specific circuit configuration of the pulse output circuit shown in Figure 14(B). (C) will explain this.

[0363] The pulse output circuit shown in Figure 14(C) consists of the first transistor 31 to the thirteenth transistor It has a 43 input terminal. In addition to the first input terminal 21 to the fifth input terminal 25 mentioned above, A power line 51 is supplied with a first high power potential VDD, and a second high power potential VCC is supplied. Power line 52 and power line 53, to which a low power supply potential VSS is supplied, to the first transistor 31 A signal or power supply potential is supplied to the 13th transistor 43. Also, the first output terminal... Signals are output to child 26 and the second output terminal 27. Here, each in Figure 14(C) The relationship between the power supply potentials of the power lines is such that the first power supply potential VDD is greater than or equal to the second power supply potential VCC. The second power supply potential VCC shall be set to a potential greater than the third power supply potential VSS. Clock signals 1 (CK1) through 4 (CK4) are set to high level at regular intervals. This is a signal that alternates between high and low levels, with VDD when it is high and VSS when it is low. Let's assume that the potential VDD of power line 51 is set higher than the potential VCC of power line 52. To lower the potential applied to the transistor's gate electrode without affecting its operation. This can be suppressed, reducing the shift in the transistor threshold and inhibiting degradation. It can. Of the first transistor 31 to the thirteenth transistor 43, the first transistor Transistor 31, the 6th transistor 36 to the 9th transistor 39 have 4-terminal thin film transistors. It is preferable to use transistors. First transistor 31, sixth transistor 36 Transistors 39 through the 9th are connected to a 400-bit circuit, with one of the electrodes, either the source or the drain, being connected to a 400-bit circuit. A transistor whose potential is to be switched by the control signal of its gate electrode. Therefore, the response to the control signal input to the gate electrode is fast (the on-current rises quickly). This transistor reduces malfunctions in pulse output circuits by making the curve steeper. Therefore, by using a 4-terminal thin-film transistor, the threshold voltage can be controlled. This allows for a pulse output circuit that can further reduce malfunctions.

[0364] In Figure 14(C), the first transistor 31 has its first terminal electrically connected to the power line 51. The second terminal is electrically connected to the first terminal of the ninth transistor 39, and the gate electrode The (lower gate electrode and the upper gate electrode) are electrically connected to the fourth input terminal 24. The second transistor 32 has its first terminal electrically connected to the power line 53, and its second terminal The first terminal of the ninth transistor 39 is electrically connected, and the gate electrode is connected to the fourth transistor It is electrically connected to the gate electrode of transistor 34. The third transistor 33 is connected to the first terminal The first input terminal 21 is electrically connected, and the second terminal is electrically connected to the first output terminal 26. The fourth transistor 34 has its first terminal electrically connected to the power line 53. The second terminal is electrically connected to the first output terminal 26. The fifth transistor 35 is The first terminal is electrically connected to the power line 53, and the second terminal is connected to the gate of the second transistor 32. The electrode and the gate electrode of the fourth transistor 34 are electrically connected, and the gate electrode is the fourth It is electrically connected to input terminal 24. The sixth transistor 36 has its first terminal connected to the power line. Electrically connected to 52, the second terminal is the gate electrode of the second transistor 32 and the fourth terminal It is electrically connected to the gate electrode of the transistor 34, and the gate electrode (the lower gate electrode and the upper The gate electrode of the transistor is electrically connected to the fifth input terminal 25. 37 has its first terminal electrically connected to the power line 52, and its second terminal connected to the eighth transistor 38. It is electrically connected to the second terminal, and the gate electrodes (lower gate electrode and upper gate electrode) The third input terminal 23 is electrically connected to the eighth transistor 38, the first terminal The gate electrode of the second transistor 32 and the gate electrode of the fourth transistor 34 are electrically charged. They are connected to the second input terminal, with the gate electrodes (lower gate electrode and upper gate electrode) connected to the second input terminal. It is electrically connected to 22. The ninth transistor 39 has its first terminal connected to the first transistor It is electrically connected to the second terminal of the sta 31 and the second terminal of the second transistor 32, and the second terminal The child is connected to the gate electrode of the third transistor 33 and the gate electrode of the tenth transistor 40. Electrically connected, the gate electrodes (lower gate electrode and upper gate electrode) are connected to power line 52 It is electrically connected to the first input terminal 2. The tenth transistor 40 has its first terminal connected to the first input terminal 2. It is electrically connected to terminal 1, and the second terminal is electrically connected to the second output terminal 27, and the gate electrode is electrically connected to terminal 1. This is electrically connected to the second terminal of the ninth transistor 39. The eleventh transistor 41 has its first terminal electrically connected to the power line 53, and its second terminal electrically connected to the second output terminal 27. Connected electrically, the gate electrode of the second transistor 32 and the fourth transistor It is electrically connected to the gate electrode of transistor 34. Transistor 42 is the 12th terminal The child is electrically connected to the power line 53, and the second terminal is electrically connected to the second output terminal 27. , the gate electrode is the gate electrode of the 7th transistor 37 (the lower gate electrode and the upper gate electrode It is electrically connected to the electrode. The 13th transistor 43 has its first terminal connected to the power line 5 It is electrically connected to 3, and the second terminal is electrically connected to the first output terminal 26, and the gate electrode is electrically connected to 3. The electrode of the seventh transistor 37 (the lower gate electrode and the upper gate electrode) is charged. They are connected by energy.

[0365] In Figure 14(C), the gate electrode of the third transistor 33 and the tenth transistor 4 The connection point between the gate electrode of transistor 0 and the second terminal of transistor 9 39 is defined as node A. Also, the gate electrode of the second transistor 32, the gate electrode of the fourth transistor 34, and The second terminal of transistor 35 (number 5), the second terminal of transistor 36 (number 6), and the eighth transistor The connection point between the first terminal of transistor 38 and the gate electrode of transistor 41 (number 11) is at node B. Let's assume that.

[0366] Figure 15(A) shows the pulse output circuit described in Figure 14(C) as the first pulse output circuit 10_ When applied to 1, the first input terminals 21 to the fifth input terminals 25 and the first output terminal 26 The signals input to or output to the second output terminal 27 are shown.

[0367] Specifically, the first clock signal CK1 is input to the first input terminal 21, and the second input terminal The second clock signal CK2 is input to child 22, and the third clock signal is input to the third input terminal 23. When input CK3 is received, a start pulse (SP1) is input to the 4th input terminal 24, and the 5th The subsequent signal OUT(3) is input to input terminal 25, and the first output is output from the first output terminal 26. Signal OUT(1)(SR) is output, and the second output signal OUT( 1) is output.

[0368] A thin-film transistor is defined as a transistor with at least three components, including a gate, a drain, and a source. It is an element having terminals. Furthermore, a channel region is formed in the region superimposed on the gate in a semiconductor. It has a body and controls the gate potential, allowing the drain and saw through the channel region. The current flowing between the source and drain can be controlled. Here, the source and drain are thin film transistors. It depends on the structure and operating conditions of the converter, so which is the source and which is the drain. It is difficult to limit the extent of this. Therefore, the regions that function as source and drain are defined as They are sometimes not called drains or suctions. In that case, for example, each is called the first It may be referred to as terminal or second terminal.

[0369] Note that in Figures 14(C) and 15(A), the boot process is performed by setting node A to a floating state. A capacitive element may be provided separately to perform the strapping action. Also, the potential of node B may be maintained. Therefore, a capacitive element with one electrode electrically connected to node B may be provided separately.

[0370] Here, the timing of a shift register equipped with multiple pulse output circuits as shown in Figure 15(A) The chart is shown in Figure 15(B). Note that if the shift register is a scan line drive circuit... In total, period 61 in Figure 15(B) is the vertical retrace period, and period 62 corresponds to the gate selection period. do.

[0371] Furthermore, as shown in Figure 15(A), the 9th gate electrode is subjected to a second power supply potential VCC. By providing transistor 39, before and after the bootstrap operation, It has the following advantages:

[0372] If there is no 9th transistor 39 to which the second power supply potential VCC is applied to the gate electrode, then When the potential of node A rises due to the trapping action, the second of the first transistor 31 The potential of the source terminal rises and becomes greater than the first power supply potential VDD. Then, the source of the first transistor 31 switches to the first terminal side, that is, to the power line 51 side. Therefore, in the first transistor 31, between the gate and source, and between the gate and drain Both are subjected to significant stress due to the application of a large bias voltage, and the transistor This can be a factor in degradation. Therefore, the 9th gate electrode is subjected to a second power supply potential VCC. By providing transistor 39, the power of node A is supplied by the bootstrap operation. Although the position rises, the potential of the second terminal of the first transistor 31 does not rise. This can be done. In other words, by providing the ninth transistor 39, the first transistor The value of the negative bias voltage applied between the gate and source of the zistor 31 can be reduced. Yes, it is possible. Therefore, by using the circuit configuration of this embodiment, the first transistor 31 The negative bias voltage applied between the gate and source can also be reduced, thus reducing stress. This makes it possible to suppress the degradation of the first transistor 31.

[0373] Furthermore, the location where the ninth transistor 39 is installed is the second transistor 31 The terminal is connected to the gate of the third transistor 33 via the first and second terminals. Any configuration that is set up in this manner is acceptable. Note that the pulse output circuit in this embodiment may be equipped with multiple pulse output circuits. In the case of a soft register, in a signal line drive circuit with more stages than a scan line drive circuit, the 9th transistor The ZISTA39 can be omitted, which has the advantage of reducing the number of transistors.

[0374] Furthermore, the semiconductor layers of the first transistor 31 to the thirteenth transistor 43 are made of oxide semiconductor material. By using a conductor, the off-current of the thin-film transistor is reduced, as well as the on-current and Because it is possible to increase the field effect mobility and reduce the degree of degradation. This can reduce malfunctions within the circuit. Furthermore, transistors using oxide semiconductors... Compared to transistors using amorphous silicon, a high potential is applied to the gate electrode. The degree of transistor degradation caused by this is small. Therefore, the second power supply potential VCC is supplied. The same operation can be obtained by supplying the first power potential VDD to the power line, and also by drawing the circuit together. This reduces the number of power lines that need to be routed, allowing for a smaller circuit.

[0375] Note that the gate electrodes of the seventh transistor 37 (the lower gate electrode and the upper gate electrode) The clock signal supplied by the third input terminal 23, and the gateway of the eighth transistor 38. The electrodes (lower gate electrode and upper gate electrode) are supplied by the second input terminal 22. The clock signal is transmitted to the gate electrode of the 7th transistor 37 (the lower gate electrode and the upper The clock signal supplied by the second input terminal 22 to the gate electrode of the eighth transistor The gate electrodes of terminal 38 (lower gate electrode and upper gate electrode) are connected to the third input terminal 23. The same effect can be achieved by reversing the wiring so that the clock signal is supplied by [the specified component]. In addition, in the shift register shown in Figure 15(A), the seventh transistor 37 and From a state where the 8th transistor 38 is both ON, the 7th transistor 37 turns OFF, and the 8th Transistor 38 is ON, then transistor 37 (number 7) is OFF, and the 8th transistor By turning off the st38, the second input terminal 22 and the third input terminal 23 The decrease in potential at node B, caused by a decrease in the potential of the seventh transistor 37, is due to the decrease in the potential of node B. This is due to a decrease in the potential of the electrode and the decrease in the potential of the gate electrode of transistor 38. This will occur twice. On the other hand, in the shift register shown in Figure 15(A), the seventh trough With transistors 37 and 8 and 38 both turned ON, the 7th transistor 3 7 is ON, the 8th transistor 38 is OFF, and then the 7th transistor 37 is OFF. By turning off the eighth transistor 38, the second input terminal 22 and The decrease in the potential of node B caused by a decrease in the potential of the third input terminal 23 is controlled by the eighth trap This can be reduced to a single instance by lowering the potential of the gate electrode of the converter 38. Therefore, The gate electrodes (lower gate electrode and upper gate electrode) of the 7th transistor 37 are connected to the 3rd A clock signal CK3 is supplied from input terminal 23, and the gate voltage of the eighth transistor 38 is supplied. A clock signal C is received from the second input terminal 22 at the poles (lower gate electrode and upper gate electrode). It is preferable to have a wiring configuration in which K2 is supplied. This is because the potential of node B fluctuates. This is because the number of particles is reduced, and noise can also be reduced.

[0376] In this way, the period during which the potential of the first output terminal 26 and the second output terminal 27 is maintained at the L level In between, a configuration is set in which a high-level signal is periodically supplied to node B, and the pulse output This can suppress malfunctions in the force circuit.

[0377] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0378] (Embodiment 10) The light-emitting devices disclosed herein can be applied to various electronic devices (including gaming machines). Yes, it is possible. Examples of electronic devices include television equipment (televisions, or television receivers). Monitors for computers, digital cameras, and digital video cameras (also known as digital cameras or digital video cameras) , digital photo frame, mobile phone (also called mobile phone or mobile phone device), portable game Examples include video games, mobile information terminals, audio playback devices, and large game machines such as pachinko machines. .

[0379] Figure 23(A) shows an example of a mobile phone. The mobile phone 1100 has a housing 1101 In addition to the display unit 1102 incorporated into it, there are operation buttons 1103, an external connection port 1104, and It is equipped with speaker 1105, microphone 1106, etc.

[0380] The mobile phone 1100 shown in Figure 23(A) allows you to touch the display unit 1102 with your finger or the like to receive information. You can enter information. Also, operations such as making phone calls or sending emails are performed on the display. This can be done by touching 1102 with a finger or other object.

[0381] The display unit 1102 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0382] For example, when making a phone call or composing an email, the display unit 1102 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1102. It seems so.

[0383] Furthermore, the mobile phone 1100 contains sensors that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation (vertical or horizontal) of the mobile phone 1100 can be determined, and the display The display on the display unit 1102 can be automatically switched.

[0384] Furthermore, the screen mode can be switched by touching the display unit 1102 or by operating the housing 1101. This is done by operating button 1103. Also, the type of image displayed on display unit 1102 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0385] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1102 is detected and displayed If there is no input via touch operation on unit 1102 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0386] The display unit 1102 can also function as an image sensor. For example, the display unit 11 By touching the palm or fingers to device 02, the device can capture images of palm prints, fingerprints, etc., to perform identity verification. It can also be used. In addition, the display unit has a backlight that emits near-infrared light or a sensor that emits near-infrared light. Using a light source designed for imaging, it is also possible to image finger veins, palmar veins, and other veins.

[0387] The display unit 1102 uses the light-emitting device shown in Embodiments 1 to 9 to ensure high reliability. It is possible.

[0388] Figure 23(B) shows an example of a portable information terminal. (Figure 23(B) is an example of a portable information terminal.) It can have multiple functions. For example, in addition to telephone functionality, it can have a built-in computer. It can also be equipped with various data processing functions.

[0389] The portable information terminal shown in Figure 23(B) consists of two housings, housing 1800 and housing 1801. It has been done. The enclosure 1801 contains a display panel 1802, a speaker 1803, and a micro Phone 1804, pointing device 1806, camera lens 1807, external connection It features terminals such as terminal 1808, and the chassis 1800 includes a keyboard 1810 and an external memory slot. It is equipped with 1811, etc. Also, the antenna is built into the housing 1800 or 1801. It is being done.

[0390] Furthermore, the display panel 1802 is equipped with a touch panel, and an image is displayed in Figure 23(B). Multiple operation keys 1805 are indicated by dotted lines.

[0391] In addition to the above configuration, a contactless IC chip, a small recording device, etc., may also be incorporated.

[0392] The light-emitting device can be used with the display panel 1802, and the display direction can be adjusted according to the usage. It changes as appropriate. Furthermore, a camera lens 1807 is provided on the same plane as the display panel 1802. Therefore, video calls are possible. Speaker 1803 and microphone 1804 produce sound. In addition to voice calls, it is also capable of video calls, recording, and playback. Furthermore, the enclosure 1800 and the enclosure Body 1801 slides and changes from an unfolded state as shown in Figure 23(B) to an overlapping state. It can be made compact enough to be portable.

[0393] External connection terminal 1808 can be connected to various cables such as AC adapters and USB cables. It is capable of charging and data communication with personal computers, etc. By inserting a recording medium into memory slot 1811, it becomes possible to store and move larger amounts of data. ru.

[0394] Furthermore, even if it has infrared communication capabilities, television reception capabilities, etc. in addition to the above functions good.

[0395] Figure 24(A) shows an example of a television system. The television system 9600 is, The display unit 9603 is integrated into the housing 9601. The display unit 9603 displays video. It is possible to do so. In addition, here the stand 9605 supports the housing 9601. This shows the configuration.

[0396] The television unit 9600 is operated using the control switches on the housing 9601 and a separate remote control. This can be done using the control unit 9610. The remote control unit 9610 has control keys The 9609 allows you to control the channel and volume, and the information is displayed on the display unit 9603. The video can be controlled. Furthermore, the remote control unit 9610 can be controlled by the remote control unit. A display unit 9607 may be provided to display the information output from 9610.

[0397] The television system 9600 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and furthermore, it can connect via a modem, either wired or wirelessly. By connecting to the communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0398] The display unit 9603 uses the light-emitting device shown in Embodiments 1 to 9, thereby increasing its reliability. It is possible.

[0399] Figure 24(B) shows an example of the digital photo frame 9700. For example, The photo frame 9700 has a display unit 9703 integrated into the housing 9701. Section 9703 is capable of displaying various images, such as those captured by a digital camera. By displaying the image data, it can function just like a regular photo frame.

[0400] The display unit 9703 uses the light-emitting device shown in Embodiments 1 to 9, thereby increasing its reliability. It is possible.

[0401] The Digital Photo Frame 9700 includes an operating unit and external connection terminals (USB terminal, USB port). A structure that includes terminals that can connect to various cables such as B cables, a recording medium insertion section, etc. These components may be incorporated on the same surface as the display unit, but may also be on the sides or back. It is desirable to include it as it improves the design. For example, the recording medium of a digital photo frame. A memory device containing image data captured by a digital camera is inserted into the body insertion site. The system can capture data and display the captured image data on the display unit 9703.

[0402] Furthermore, the 9700 digital photo frame may be configured to transmit and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly.

[0403] Figure 25 shows a portable gaming machine, which consists of two cabinets, cabinet 9881 and cabinet 9891. The two parts are connected by a connecting part 9893 so that they can be opened and closed. The housing 9881 has a display unit 988 Unit 2 is incorporated, and the display unit 9883 is incorporated into the housing 9891.

[0404] Since the display units 9882 and 9883 use the light-emitting devices shown in Embodiments 1 to 9, It can increase reliability.

[0405] Furthermore, the portable gaming machine shown in Figure 25 also includes a speaker unit 9884 and a recording medium insertion unit 9 886, LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor Sa9888 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature) Degree, chemical substance, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient (including devices that measure vibration, odor, or infrared radiation), microphones (9889), etc. It is equipped. Of course, the configuration of portable gaming machines is not limited to those described above, and at least the main Any configuration including thin-film transistors as disclosed in the details is acceptable, and other auxiliary equipment may be provided as appropriate. The configuration can be as follows. The portable gaming machine shown in Figure 25 records on a recording medium. Functions include reading programs or data and displaying them on the display unit, and wireless communication with other portable gaming machines. It has the function of communicating and sharing information. Note that the portable gaming machine shown in Figure 25 has this function. Noh is not limited to this and can have a variety of functions.

[0406] Figure 26 shows a light-emitting device formed by applying the above embodiment, connected to an indoor lighting device 3001. This is an example of its use. The light-emitting device shown in the above embodiment can also be made to cover a large area, It can be used as an area lighting device. Furthermore, the light-emitting device shown in Embodiment 2 above It can also be used as a desk lamp 3000. Note that the lighting fixture is ceiling-mounted. In addition to table lamps and desk lamps, this also includes wall-mounted lighting fixtures, vehicle interior lighting, and emergency lights. Born.

[0407] As described above, the light-emitting devices shown in Embodiments 1 to 9 are suitable for various electronic devices as described above. It can be placed on a display panel, providing highly reliable electronic equipment. [Explanation of Symbols]

[0408] 10. Pulse output circuit 11 Wiring 12 Wiring 13 Wiring 14 Wiring 15 Wiring 21 Input terminals 22 Input terminals 23 Input terminals 24 input terminals 25 Input terminals 26 output terminals 27 Output terminals 31 transistors 32 transistors 33 transistors 34 transistors 35 transistors 36 transistors 37 transistors 38 transistors 39 Transistors 40 transistors 41 Transistors 42 transistors 43 transistors 51 Power line 52 Power line 53 Power line 100 circuit boards 101 Grid Layer 102 Gate Insulation Layer 103 Oxide semiconductor layer 106 Protective insulating layer 107 Oxide insulating film 108 Capacitive wiring layer 109 Protective insulating layer 110 Electrode layer 111 Conductive layer 112 Conductive layer 113 Terminal electrode 116 Channel formation region 118 Contact Holes 119 Contact Holes 120 connecting electrodes 121 terminals 122 terminals 125 Contact Holes 126 Contact Holes 127 Contact Holes 128 Terminal electrode 129 Terminal electrode 130 Oxide semiconductor film 131 Oxide semiconductor layer 133 Oxide semiconductor layer 134 Oxide semiconductor layer 137 Resist Mask 138 Oxide conductive layer 140 Oxide conductive film 142 Oxide conductive layer 143 Oxide conductive layer 145 Wiring layer 146 capacity 147 capacity 149 Capacitive electrode layer 150 terminals 151 terminals 153 Connecting electrodes 155 Conductive film 156 Electrode 161 Grid control platform 162 Conductive layer 163 Oxide semiconductor layer 166 Channel formation region 168 Oxide semiconductor layer 170 Thin-Film Transistors 171 Thin-film transistors 172 Thin-film transistors 173 Thin-film transistors 180 Thin-Film Transistors 181 Thin-film transistors 182 Thin-film transistors 183 Thin-film transistors 185 Capacitive electrode layer 191 Color Filter Layers 192 Overcoat layer 193 Bulkhead 194 EL layer 195 Electrode layer 196 Connecting electrode layer 198 Oxide semiconductor layer 1001 Electrode 1002 Electrode 1003 EL layer 1004 Charge generation layer 104a Oxide conductive layer 104b Oxide conductive layer 105a Source electrode layer 105b Drain electrode layer 1100 Mobile phone 1101 enclosure 1102 Display section 1103 Operation Buttons 1104 External connection port 1105 Speaker 1106 Mike 117a High-resistance source region 117b High-resistance drain region 135a Resist Mask 136a Resist Mask 164a Oxide conductive layer 164b Oxide conductive layer 165a Source electrode layer 165b Drain electrode layer 167a High-resistance source region 167b High-resistance drain region 1800 units 1801 enclosure 1802 Display Panel 1803 Speaker 1804 Microphone 1805 Operation Keys 1806 Pointing device 1807 Camera Lens 1808 External connection terminal 1810 Keyboard 1811 External memory slot 3000 Table Lamps 3001 Lighting device 4501 circuit board 4502 pixel section 4505 Sealant 4506 circuit board 4507 Filling material 4509 Thin-film transistor 4510 Thin-Film Transistor 4511 Light-emitting element 4512 Electroluminescent layer 4513 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 4540 Conductive layer 4542 Oxide insulating layer 4543 Overcoat layer 4544 Insulating layer 4545 Color Filter Layer 4546 Insulating layer 5300 circuit boards 5301 pixel section 5302 Scan line drive circuit 5303 Scan line drive circuit 5304 Signal Line Drive Circuit 5305 Timing control circuit 5601 Shift Register 5602 Switching Circuit 5603 Thin-film transistor 5604 Wiring 5605 Wiring 6400 pixels 6401 Switching Transistor 6402 transistor 6403 Capacitive element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 7001 TFT 7002 Light-emitting element 7003 Electrode layer 7004 EL layer 7005 Electrode layer 7009 Bulkhead 7011 Drive TFT 7012 Light-emitting element 7013 Electrode layer 7014 EL layer 7015 Electrode layer 7016 Shielding membrane 7017 Conductive film 7019 Bulkhead 7021 Drive TFT 7022 Light-emitting element 7023 Electrode layer 7024 EL layer 7025 Electrode layer 7026 Electrode layer 7027 Conductive film 7029 Bulkhead 7031 Oxide insulating layer 7032 Protective insulating layer 7033 Color filter layer 7034 Overcoat layer 7035 Protective insulating layer 7041 Oxide insulating layer 7042 Protective insulating layer 7043 Color filter layer 7044 Overcoat layer 7045 Protective insulating layer 7051 Oxide Insulating Layer 7052 Protective insulating layer 7053 Planarized insulating layer 7055 Protective insulating layer 9600 Television equipment 9601 enclosure 9603 Display section 9605 Stand 9607 Display section 9609 Operation Keys 9610 Remote Control Unit 9700 Digital Photo Frame 9701 enclosure 9703 Display section 9881 cabinet 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation Keys 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 cabinet 4503a Signal Line Drive Circuit 4504a Scan line drive circuit

Claims

1. The substrate has a pixel section and a drive circuit section. The drive circuit section has a first transistor, The pixel portion is a display device having a second transistor and a light-emitting element electrically connected to the second transistor, A first insulating layer having a region located on the substrate, A first oxide semiconductor layer having a region located above the first insulating layer and having a channel formation region for the first transistor, A second insulating layer having a region in contact with the upper surface of the first oxide semiconductor layer, A first conductive layer having a region that overlaps with the first oxide semiconductor layer via the second insulating layer and functioning as the gate electrode of the first transistor, A third insulating layer having a region in contact with the upper surface of the first conductive layer, A second conductive layer having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A second oxide semiconductor layer having an overlap with the second conductive layer via the first insulating layer and having a channel formation region for the second transistor, A third conductive layer located above the third insulating layer and functioning as the first electrode of the light-emitting element, A fourth conductive layer having the same material as the first conductive layer and having a region in contact with the third conductive layer at the opening of the third insulating layer, The color filter layer has a region located above the first insulating layer and below the third conductive layer, The third insulating layer has a region that is in contact with the upper surface of the fourth conductive layer. The third conductive layer is electrically connected to the second oxide semiconductor layer via the fourth conductive layer. A display device wherein the second insulating layer functions as a gate insulating layer for the first transistor, but does not function as a gate insulating layer for the second transistor.

2. The substrate has a pixel section and a drive circuit section. The drive circuit section has a first transistor, The pixel portion is a display device having a second transistor and a light-emitting element electrically connected to the second transistor, A first insulating layer having a region located on the substrate, A first oxide semiconductor layer having a region located above the first insulating layer and having a channel formation region for the first transistor, A second insulating layer having a region in contact with the upper surface of the first oxide semiconductor layer, A first conductive layer having a region that overlaps with the first oxide semiconductor layer via the second insulating layer and functioning as the gate electrode of the first transistor, A third insulating layer having a region in contact with the upper surface of the first conductive layer, A second conductive layer having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A second oxide semiconductor layer having an overlap with the second conductive layer via the first insulating layer and having a channel formation region for the second transistor, A third conductive layer located above the third insulating layer and functioning as the first electrode of the light-emitting element, A fourth conductive layer having the same material as the first conductive layer and having a region in contact with the third conductive layer at the opening of the third insulating layer, The color filter layer has a region located above the first insulating layer and below the third conductive layer, The third insulating layer has a region that is in contact with the upper surface of the fourth conductive layer. The third conductive layer is electrically connected to the second oxide semiconductor layer via the fourth conductive layer. The second insulating layer has the function of a gate insulating layer for the first transistor, and does not have the function of a gate insulating layer for the second transistor. In a cross-sectional view of the second transistor in the channel length direction, the third conductive layer does not overlap with the channel formation region of the second transistor. A display device wherein, in a cross-sectional view of the second transistor in the channel length direction, the color filter layer does not overlap with the channel formation region of the second transistor.

3. In claim 1 or 2, A display device wherein the second oxide semiconductor layer has a region that does not overlap with the second conductive layer.

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