Carrier substrate, method for manufacturing a carrier substrate, and method for transferring a transfer layer from a carrier substrate to a product substrate.

Abstract

To provide a carrier substrate that transfers graphene from a first surface, which is a production surface, to a second surface, which is a use surface.SOLUTION: A carrier substrate 1 for transferring a transfer layer 6 from a carrier substrate to a product substrate includes at least a carrier base substrate 3, a protective layer 5, and the transfer layer 6, in that order, the transfer layer 6 is grown on the protective layer 5.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention describes a carrier substrate, a method for manufacturing a carrier substrate, and a method for transferring a transfer layer from a carrier substrate to a product substrate. Here, the transfer layer, in particular a graphene layer, is first placed on the carrier substrate, and in particular the transfer layer is generated or grown on a layer of the carrier substrate and transferred to the product substrate by the transfer method.

[0002] Layer transfer processes already exist in the prior art. These processes are used to transfer very thin layers, particularly those with thicknesses in the micrometer or even nanometer range, from one substrate to another. Many of these layers can only be fabricated on a specific first surface, but this first surface is not intended to simultaneously become part of a subsequent functional component. Therefore, it is necessary to transfer the layer from the first surface to the second surface.

[0003] One of the most widely known layer transfer processes in the semiconductor industry is the SmartCut™ process. In this process, ions, particularly hydrogen ions, are irradiated onto a first single-crystal substrate. The penetration depth of the hydrogen ions can be controlled by kinetic energy and is only a few nanometers. The hydrogen ions remain within the first substrate until it bonds with the oxidized second substrate. Subsequently, heat treatment causes the hydrogen atoms to bond to form water molecules, separating the first single-crystal substrate along the plane where the hydrogen ions have accumulated. A three-layer structure is obtained in which the oxide is sandwiched between the other two materials, usually silicon. In this case, the transferred layer of the first substrate is very thin, and is particularly single-crystal. The oxide layer beneath it has a favorable effect on components with high switching frequencies, especially transistors.

[0004] Attempts to manufacture graphene on a large surface area have been underway in industry for several years. Conventional technologies include numerous methods for producing graphene. Graphene flakes can already be manufactured industrially on a ton-scale basis. However, these graphene flakes are too small and primarily produced through wet chemical processes, particularly in solutions, rather than on the substrate surface, making them of little importance to the semiconductor industry. The goal is to manufacture graphene layers at the wafer level, either across the entire wafer or targeted to the wafer's existing topology. However, wafer-level graphene layer manufacturing is considered the most promising.

[0005] The main challenge here is to produce graphene layers and other highly sensitive transferable layers cost-effectively, quickly, over large areas, and without defects. Empirically, it has been found that large-area growth of graphene layers is particularly desirable on single-crystal metal surfaces.

[0006] However, the problem is that the surface on which graphene is grown over a large area rarely coincides with the surface on which the graphene is structured and used. Therefore, it is necessary to transfer the graphene from the first surface, which is the manufacturing surface, to the second surface, which is the usage surface. In this transfer, peeling means, especially lasers, are usually used, and the action of the laser, especially electromagnetic radiation, can destroy or damage the transfer layer or the graphene layer.

[0007] Therefore, the object of the present invention is to present a carrier substrate, a method for manufacturing a carrier substrate, and a method for transferring a transfer layer from a carrier substrate to a product substrate that at least partially, and in particular completely, overcome the shortcomings of the prior art. In particular, the object of the present invention is to present an improved carrier substrate, a method for manufacturing a carrier substrate, and a transfer method for transferring a transfer layer from a carrier substrate to a product substrate. Furthermore, in particular, the object of the present invention is to present a carrier substrate and a method for transferring a transfer layer from a carrier substrate to a product substrate in which the transfer layer is not destroyed or damaged, in particular by electromagnetic radiation.

[0008] The problems of the present invention are solved by the features of the independent claims. Advantageous extensions of the present invention are specified in the dependent claims. Any combination of at least two features shown herein, in the claims and / or in the drawings is included within the scope of the present invention. Within the indicated value range, values ​​within the stated limits should also be considered disclosed as limit values ​​and can be claimed in any combination.

[0009] In the following text, the term "transfer layer" or "transferable layer," particularly in the form of a graphene layer, is understood to mean a layer on the carrier substrate to be transferred to the product substrate. Specifically, the transfer layer is grown on the protective layer or growth layer of the carrier substrate. Here, the terms "protective layer" and "growth layer" are used synonymously in the following text.

[0010] However, the growth layer and the protective layer may be two different layers. In this case, since the growth layer is in contact with the transfer layer, the protective layer is located between the growth layer and the carrier-based substrate. For the sake of simplification, in the following text, we will assume that the growth layer and the protective layer are identical. This is more economically rational because in this case, only one layer needs to be deposited, thereby keeping process costs low.

[0011] Therefore, the present invention relates to a carrier substrate for transferring a transfer layer from a carrier substrate to a product substrate, wherein the carrier substrate comprises at least the following layers in the following order: - Carrier-based substrate - Protective layer, and - Transfer layer The transfer layer is prepared and grows on the protective layer, relating to the carrier substrate.

[0012] The carrier substrate comprises at least the aforementioned layers in the aforementioned order. However, further intermediate layers with particularly specific functions may be arranged between and / or on the aforementioned layers. In particular, the protective layer may consist of multiple individual layers, each protecting the transfer layer. Here, the protective layer acts as a barrier to protect the transfer layer from effects that could act on the transfer and damage or destroy it. To transfer the transfer layer from the carrier substrate to the product substrate, the adhesion characteristics are reduced, particularly in the area between the protective layer and the transfer layer, while the protective layer protects the transfer layer. This layer structure of the carrier substrate allows for advantageous, easy, and efficient transfer of the transfer layer, during which the transfer layer is not damaged because it is protected by the protective layer. Furthermore, the dual function of the protective layer as a barrier and as a growth layer for the transfer layer enables lower-cost manufacturing on an industrial scale.

[0013] The present invention also relates to a method for manufacturing a carrier substrate for transferring a transfer layer from a carrier substrate to a product substrate, particularly according to any one of the above claims, i) A step of providing a carrier-based substrate, ii) A step of applying a protective layer to the carrier base substrate, iii) A step of growing a transfer layer, particularly a graphene layer, on a protective layer. This relates to a method having

[0014] In the manufacturing method of carrier substrates, it is assumed that a transfer layer will be grown on a protective layer. The protective layer serves to protect the transfer layer during its transfer and can also function as a site for the generation or growth of the transfer layer. Thus, the protective layer has a dual function, which eliminates the need for additional layers in manufacturing. Furthermore, a carrier substrate with a protective layer allows for subsequent transfer without damaging the transfer layer. Advantageously, this makes it easy to separate the site for generation or growth of the transfer layer from its use on the product substrate.

[0015] Furthermore, the present invention relates to a method for transferring a transfer layer from a carrier substrate or a carrier substrate manufactured by a method for manufacturing a carrier substrate to a product substrate, - The carrier substrate is brought into contact with the product substrate so that the transfer layer faces the product substrate. - The present invention relates to a method in which at least one peeling means acts on the carrier substrate to peel the transfer layer together with the protective layer from the carrier base substrate.

[0016] Thus, this transfer method for the transfer layer advantageously allows for easy and efficient transfer of the transfer layer from one surface to another, particularly from the manufacturing surface to the usage surface.

[0017] Delamination is made possible by the action of at least one delamination means, particularly in the form of a laser, preferably in the form of an infrared laser, during which a protective layer protects the transfer layer from the effects of at least one delamination means or shields the transfer layer from such effects, thereby preventing damage to the transfer layer. In particular, it is envisioned that the transfer layer is delaminated from the carrier substrate together with the protective layer, and then the protective layer is removed. To bring the carrier substrate into contact with the product substrate, it is advantageous that relative movement between the contact surfaces is no longer possible. Prior to contact, the carrier substrate and the product substrate are aligned with each other, particularly by the alignment of their respective substrate holders. During alignment, the most accurate alignment possible is achieved, particularly using alignment marks applied to the carrier substrate and / or product substrate. As a result, the transfer of the transfer layer to the product substrate is advantageously easy and efficient. Particularly advantageous, the transfer layer is not damaged or destroyed by the action of the delamination means. In this case, the generation or growth of the transfer layer is carried out in advance on the carrier substrate. Therefore, at this point, the transfer layer can be advantageously detached from its location of generation or growth on the carrier substrate, particularly on the protective layer, and placed on the product substrate.

[0018] In a preferred embodiment of the carrier substrate, it is assumed that the transfer layer is a graphene layer. In this case, the graphene layer is disposed on the protective layer and protected by the protective layer. Since the carrier substrate designed to transfer the graphene layer is assumed to be peeled off from the carrier base substrate together with the protective layer during transfer, thus separating the graphene layer from the carrier substrate, damage or destruction of the graphene layer by means of peeling, particularly in the form of electromagnetic radiation, cannot occur. Therefore, the carrier substrate is for the transfer of the graphene layer. With this carrier substrate, the easy and efficient production and transfer of the graphene layer can advantageously be carried out on a large scale instead of the conventional merely laboratory scale. It is particularly advantageous to grow the graphene layer as the transfer layer on the protective layer.

[0019] In another preferred embodiment of the carrier substrate, it is assumed that the roughness of the protective layer, particularly on the surface facing the transfer layer, is less than 一百微米, preferably less than 十微米, more preferably less than 一微米, very preferably less than 一百纳米, and most preferably less than 十纳米. In particular, it is only by keeping the roughness of the growth layer as low as possible that the generation or growth of the transfer layer becomes possible. A particularly thin transfer layer, particularly a graphene layer, needs to be grown on a very flat and clean surface. In this way, the transfer layer is generated on the layer that protects the transfer layer even before being affected by the peeling means acting during transfer. It is preferable to recrystallize the protective layer during its manufacture before the growth of the transfer layer, whereby the growth of the transfer layer, particularly the graphene layer, is further simplified or improved.

[0020] In another preferred embodiment of the carrier substrate, it is assumed that the carrier substrate comprises at least one release layer disposed between the carrier base substrate and the protective layer. By means of the release layer, the exact position of the peeling of the transfer layer in the carrier base substrate can advantageously be defined. Furthermore, peeling along the release layer can be advantageously carried out easily and efficiently.

[0021] It should be noted that the "一百微米", "十微米", "一微米", "一百纳米", and "十纳米" in the translation of should be replaced with the corresponding Arabic numerals "100 μm", "10 μm", "1 μm", "100 nm", and "10 nm" respectively in a formal translation. Here, for the purpose of showing the translation content completely, the Chinese numerals are temporarily used.More advantageously, the design of the release layer can define the required adhesion force between the carrier-based substrate and the protective layer. In particular, the design of the release layer can define under what influence the release of the transfer layer is possible.

[0022] In another preferred embodiment of the carrier substrate, it is assumed that the transfer layer can be peeled off from the carrier-based substrate together with the protective layer by a peeling means acting on the release layer and / or the release region. When performing the peeling process, the peeling means acts on the carrier substrate. At this time, the release layer or the release region and the peeling means are adapted to each other. At this time, the release layer is a specific material layer, while the release region is defined by the contact surface between the carrier-based substrate and the protective layer. The peeling in the release region can occur, for example, by the expansion of the material introduced into the contact surface region. Therefore, the release region does not represent a specific layer of the carrier substrate, but particularly performs the same function. When the peeling means acts on the release region or the release layer, in particular, the adhesion characteristics of the release layer or the adhesion characteristics of the contacting protective layer and the carrier-based substrate change, and as a result, the protective layer can be peeled off from the carrier-based substrate together with the transfer layer. In this way, the transfer of the transfer layer from the carrier substrate to the product substrate can be carried out particularly easily and efficiently.

[0023] In another preferred embodiment of the carrier substrate, it is assumed that the protective layer is composed of a material in which carbon can dissolve. When the protective layer is a material with a particularly high solubility of carbon, in particular, a transfer layer composed of graphene can be generated or grown by heating and cooling on the protective layer. At this time, carbon is deposited on the surface of the protective layer, and a transfer layer is generated on the carrier substrate. Due to this specific advantageous layer structure of the carrier substrate, the generated transfer layer can now be easily and efficiently transferred to the product substrate.

[0024] In another preferred embodiment of the carrier substrate, it is assumed that the protective layer is designed to be impermeable to electromagnetic radiation. When electromagnetic radiation, such as a laser, is used to peel off the release layer or to reduce the adhesion properties of the release layer, the protective layer can absorb the radiation, thereby preventing damage or destruction of the transfer layer. In this embodiment, it is preferable that the carrier base substrate is at least partially permeable to electromagnetic radiation. For example, the carrier base substrate is made of glass, preferably sapphire glass.

[0025] In another preferred embodiment of the carrier substrate, a contact layer is assumed to be located on the surface of the transfer layer opposite the protective layer, particularly composed of a dielectric material, preferably silicon oxide. Such a contact layer allows for easier and more reliable contact during transfer to the product substrate. Furthermore, by using a dielectric material, such as silicon oxide, for the contact layer, short circuits in the product substrate can be prevented, or electrical conduction between the product substrate and the transfer layer can be permitted only at desired locations. It is also possible to place an additional contact layer on the product substrate. The contact layer and the additional contact layer on the product substrate are preferably composed of the same material, enabling particularly easy contact between the carrier substrate and the product substrate.

[0026] In another preferred embodiment of the carrier substrate, the protective layer is assumed to be a single-crystal metal layer, preferably made of nickel. The formation or growth of the transfer layer is advantageously carried out on the single-crystal material. By using a single-crystal metal layer, the transfer layer can be advantageously grown on the protective layer. At the same time, the single-crystal metal layer is also suitable for protecting the transfer layer from the effects of electromagnetic peeling means, such as lasers. A nickel protective layer is most preferred because the graphene layer can be formed or grown particularly well on such a nickel-based layer.

[0027] In another preferred embodiment of the carrier substrate, the transfer layer is assumed to be formed on a protective layer. According to this embodiment, the transfer layer is formed directly above the protective layer. Thus, because the transfer layer is advantageously positioned directly above the protective layer, the transfer layer is directly protected by the protective layer from influences acting on the opposite side of the protective layer. This particular layer structure of the carrier substrate enables easy and efficient transfer of the transfer layer from the carrier substrate to the product substrate.

[0028] In another preferred embodiment of the carrier substrate, the protective layer is also designed to serve as a growth layer for the transfer layer, so that the transfer layer can grow on the protective layer. In this embodiment, the protective layer performs two functions. The first function is the protective function of the protective layer, which specifically means that the protective layer protects the transfer layer from the effects of the peeling means. The second function is to enable the growth of the transfer layer on the protective layer, in which case the protective layer can also be used as a growth layer. This is advantageous as only one layer is required for the protection and generation of the transfer layer, particularly the graphene layer. It is also conceivable that the protective layer consists of multiple layers. In this case, one or more layers facing the peeling layer are designed as the protective layer. One or more layers on the opposite side of the peeling layer enable the generation of the transfer layer. Thus, the dual function of the protective layer is achieved by two or more layers, in which case the protective layer consists of at least two layers. However, it is preferable that one layer forms the protective layer, and this layer enables both the protective function and the generation of the transfer layer simultaneously.

[0029] In another preferred embodiment of the carrier substrate, it is assumed that the transfer layer can be detached from the carrier substrate together with the protective layer by at least one detachment means acting on a release layer or release region. Preferably, a detachment means in the form of a laser acts on the release layer to reduce its adhesion properties, thereby detaching the transfer layer from the carrier substrate together with the protective layer. In this case, the detachment means preferably acts on the release layer. Further effects resulting from the detachment means are reduced and preferably prevented by the protective layer. In this case, the protective layer preferably acts as a barrier to the transfer layer against effects resulting from the detachment means. In this way, the transfer layer can be advantageously detached without damaging the transfer layer.

[0030] In one preferred embodiment of the method for manufacturing a carrier substrate, the protective layer is recrystallized before the growth of the transfer layer in step iii). In this way, the protective layer can perform its function as a growth layer more effectively, preferably on a protective layer having very low roughness. In this way, the growth of the transfer layer, particularly the graphene layer, on the protective layer is simplified or improved.

[0031] In one preferred embodiment of the method for manufacturing a carrier substrate, it is assumed that the carrier base substrate is coated with a release layer before the application of the protective layer in step ii), and the protective layer is applied on the release layer. This makes it advantageously easy to peel off when the generated transfer layer is subsequently transferred. Furthermore, the application of the release layer allows for advantageously defining the position of peeling.

[0032] In a preferred embodiment of the carrier substrate manufacturing method, a contact layer is assumed to be deposited on the surface of the transfer layer opposite to the protective layer. The contact layer advantageously simplifies the bonding process performed during the transfer of the transfer layer. Furthermore, the contact layer may also contribute to better contact with the product substrate. Moreover, a functionalized contact layer may enable contact with the transfer layer in specific predetermined areas, for example, through conductive regions.

[0033] In a preferred embodiment of the carrier substrate manufacturing method, the protective layer is also designed to function as a growth layer for growing a transfer layer on the protective layer, and it is assumed that the transfer layer will grow on the protective layer. In this way, the protective layer advantageously performs its protective function while enabling the formation of the transfer layer on the protective layer. Therefore, advantageously, only one layer is used. However, it is also conceivable that the protective layer consists of two or more layers. In that case, one or more layers facing the release layer are designed to protect from the effects of the release means. One or more further layers enable the formation of the transfer layer as a growth layer. However, it is preferable that the protective layer consists of a single layer with dual functions. This makes it advantageously easy and efficient to carry out the carrier substrate manufacturing method.

[0034] In another preferred embodiment of the method for manufacturing the carrier substrate, a contact layer is assumed to be deposited on the transfer layer. The contact layer is preferably composed of a dielectric material, particularly preferably silicon oxide. As a result, subsequent short circuits in the product substrate can be prevented. Furthermore, contact between the carrier substrate and the product substrate can be performed particularly easily and safely.

[0035] In a preferred embodiment of the transfer method for the transfer layer, it is assumed that the carrier substrate is brought into contact with the product substrate via a contact layer provided on the transfer layer, or that the carrier substrate is brought into contact with a further contact layer provided on the product base substrate of the product substrate via a contact layer provided on the transfer layer. Thus, the product substrate is provided with a further contact layer. The contact layer is preferably made of a dielectric material, and particularly preferably made of silicon oxide. If the carrier substrate also has a contact layer on the transfer layer, the contact layer of the carrier substrate and the further contact layer of the product substrate are particularly preferably made of the same material. In this way, contact during transfer can be made particularly easily and efficiently. Furthermore, short circuits are prevented by the contact layer.

[0036] In another preferred embodiment of the transfer method for the transfer layer, it is assumed that the transfer layer is connected to the product substrate, or that a contact layer placed on the transfer layer is connected to the product substrate. The transfer layer is connected to the product substrate, and as a result, the transfer is completed.

[0037] The bonding process is preferably divided into a pre-bonding and a subsequent permanent bonding. In the pre-bonding, a relatively weak connection is formed between the two substrates that is theoretically peelable again without destruction, and this is preferably based on a surface effect. In this case, a hydrophilic surface is particularly advantageous. The subsequent permanent bonding is characterized by strengthening the connection formed in the pre-bonding. Permanent bonding is preferably achieved by raising the temperature. However, in order to reduce, or preferably completely eliminate, the possibility of damage to the transfer layer or any existing equipment parts, it is desirable that the temperature be as low as possible. Thus, the temperature during permanent bonding is preferably less than 300°C, preferably less than 200°C, more preferably less than 100°C, very preferably less than 50°C, and most preferably room temperature. Such pre-bonding and permanent bonding are known to those skilled in the art.

[0038] The protective layer is peeled off from the transfer layer, particularly before, during, or after the connection between the transfer layer and the product substrate. This method allows for the easy and efficient transfer of a large-area, highly sensitive transfer layer without defects. Transfer of a graphene layer to a product substrate is particularly preferred. The product substrate itself may have functional components pre-integrated, particularly vias, and the desired target electrical conductivity between the product substrate and the transfer layer is only possible in these areas.

[0039] In the following, the term "growth layer" will be used in contrast to the "protective layer." Since the protective layer is often designed for the protection and generation or growth of the transcription layer, the terms "growth layer" and "protective layer" will be used interchangeably below. However, this does not mean a single growth layer without protective function; rather, the growth layer is a protective layer upon which the transcription layer can grow or grow.

[0040] A particular aspect of the concept of the present invention encompasses the presentation of a method for growing or generating individual transfer layers or graphene layers, transferring them from the manufacturing surface of a carrier substrate to the working surface of a product substrate, and peeling them off. Herein, the basic idea is to manufacture a layer system consisting of a carrier base substrate, a peeling layer, a growth layer, a graphene layer (transfer layer), and preferably a dielectric layer, in a well-defined sequence so that layer transfer can be carried out without problems.

[0041] In a further aspect of the present invention, it is envisioned that a highly specialized layer structure is generated on a carrier substrate, and each layer of this layer structure performs a different functional task. In particular, a delamination layer is used to separate the graphene layer from the carrier substrate. A growth layer or protective layer is used for both the growth of the transfer layer or graphene layer and for protection.

[0042] Furthermore, the carrier substrate on which the transfer layer or graphene can be manufactured and the product base substrate on which the transfer layer or graphene is used are generally different. Thus, the process of manufacturing the transfer layer or growing the graphene is separated from the location where the transfer layer or graphene is used. Accordingly, the production of such sensitive transfer layers or graphene layers becomes flexible and cost-effective.

[0043] The method for transferring carrier substrates and transfer layers can, in principle, be used for transferring any type of layer to be transferred or transfer layer. However, as an example, we will describe the transfer of a graphene layer as a transfer layer. This is because the transfer of such a single atomic layer must meet specific requirements and has not been possible in industry until now.

[0044] However, the method according to the present invention is by no means limited to the transfer of a graphene layer. For example, the transfer layer can be another carbon-based layer, particularly a single-atom layer.

[0045] The transfer layer preferably consists of at least one of the following material classes or materials.

[0046] • Two-dimensional layered materials, especially • Graphene Graphene Borofen Germanine • Silicone ·Si2BN ·Garrenen · Stanen • Planben • Phospholene • Antimonene • Bismutten • 2D supercrystal ·Compound • Graphfan • Boronitren Boron carbonitride Germanan Germanium phosphide • Transition metal dichalcogenides ·MXene • Layer materials with various elemental compositions, especially ·MoS2, WS2, MoSe2, hBN, Ti4N3, Ti4AlN3 • Van der Waals heterostructure, in particular ·MoS2-G;MoS2-hBN, MoS2-hBN-G • Metals, especially ·Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn • Semiconductors, especially ·Ge, Si, α-Sn, B, Se, Te • Compound semiconductors, especially ·GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdT e, Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe ·ceramic ·polymer · Additional materials · SiO2 · Si3N4 · MnO2 · TBA , n , 11 ,

[0048] , 1 / 3 , , , 0.5 , , , 1 / 3 , , 2- , , , 36 , , , , , 1 / 3+ , ,

[0047] , 2 / 3 , , 2.5 , , 5 / 3 ,

[0049] H (1.07-x) Ti 1.73 O4*H2O · CoO2 - · TBA x H (1-x) Ca2Nb3O 10 · Bi2SrTa2O9 · Cs4W 11 O 36 2- · Ni(OH) 5 / 3 DS 1 / 3 · Eu(OH) 2.5 (DS) 0.5 · Co 2 / 3 Fe 1 / 3 (OH)2 1 / 3+ · [Cu2Br(IN2)] n

[0047] The transfer layer is most preferably a layer made of graphene.

[0048] The method of transferring the transfer layer requires, in particular, a product substrate and a carrier substrate. The product substrate and the carrier substrate generally consist of a product base substrate and a carrier base substrate. Generally, a plurality of layers can be deposited on the product base substrate and / or the carrier base substrate.

[0049] The product base substrate and the carrier base substrate can in principle be made of any material, but preferably belong to one of the following material classes: 1. Semiconductor materials, especially 1.1 Ge, Si, α-Sn, B, Se, Te 2. Metals, especially 2.1 Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn ​3. Compound semiconductors, especially 3.1 GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe 4. Glass, especially 4.1 Metallic Glass 4.2 Nonmetallic glass, especially 4.2.1 Organic nonmetallic glass 4.2.2 Inorganic nonmetallic glass, in particular 4.2.2.1 Non-oxide glass, especially 4.2.2.1.1 Halogenated Glass 4.2.2.1.2 Chalcogenide glass 4.2.2.2 Oxide Glass, in particular 4.2.2.2.1 Phosphate glass 4.2.2.2.2 Silicate glass, especially 4.2.2.2.2.1 Aluminosilicate glass 4.2.2.2.2.2 Lead silicate glass 4.2.2.2.2.3 Alkali silicate glass, especially 4.2.2.2.2.3.1 Alkali and alkaline earth silicate glass 4.2.2.2.2.4 Borosilicate glass 4.2.2.2.2.5 Quartz glass 4.2.2.2.3 Borate glass, especially 4.2.2.2.3.1 Alkali borate glass 4.3 Materials that are called glass but are not glass 4.3.1 Sapphire Glass

[0050] The circuit board will be explained in detail below.

[0051] Product circuit board In the first embodiment, the product substrate consists solely of a product base substrate. Therefore, the product substrate contains no coatings whatsoever. The layerless product base substrate functions particularly as a starting layer for a transfer graphene layer, which is then structured as a conductive layer. Further substrates can then be bonded to this conductive layer. It is also conceivable to equip it with individual chips. The most preferred product base substrate is a wafer, particularly a silicon wafer.

[0052] In a second embodiment, a layer exists on the product base substrate, which is hereafter referred to as the contact layer. The contact layer is preferably a dielectric layer, and very preferably a silicon oxide layer. This layer is called the contact layer because it comes into contact with the transfer layer, particularly the graphene layer, or a layer deposited thereon, in a later process step. The contact layer is preferably a dielectric layer, very preferably an oxide, and most preferably silicon oxide. The oxide can be thermally generated or grown natively in an oxygen atmosphere. Such a dielectric layer can facilitate the transfer process of the transfer layer or graphene layer and may also be necessary for the desired final result.

[0053] In a third embodiment, functional units, particularly microchips, memory, MEM, LEDs, etc., are pre-fabricated on a product base substrate. In a particularly preferred extended embodiment, the product base substrate is coated with a contact layer, particularly after the functional units have been fabricated. In a subsequent process step, the dielectric contact layer is opened above the contact areas of the functional units, particularly by lithography. In a subsequent process step, a conductor, particularly a metal, can be filled into these openings. These vias are called TSVs (through silicon vias) in the semiconductor industry. This makes the contact layer a hybrid layer. The vias represent electrical regions, and the surrounding dielectric layer represents dielectric regions. In a subsequent process step, a transfer layer or graphene layer is transferred onto the contact layer, thereby creating contact areas between the graphene and the functional units via TSVs. Alternatively, it is conceivable to use only the product base substrate with the functional units and transfer the transfer layer onto it without using a contact layer.

[0054] The contact layer allows for the selection of materials with specific properties not present in the product substrate itself. For example, silicon, being an inherent semiconductor, possesses very slight conductivity even at room temperature. The surface onto which the transfer layer or graphene layer is transferred is often preferably a dielectric to prevent short circuits after the graphene, which is the material of the transfer layer, has been structured. Since silicon can be oxidized by known methods, silicon oxide is a preferred material for the dielectric layer.

[0055] Next, a transfer layer, such as a graphene layer, can be transferred to one of the aforementioned product substrates using this method, and this transfer layer can then be structured. In particular, the transfer layer is structured so that the conductive contact portion of the functional unit is connected in correspondence, especially via TSVs.

[0056] The product base substrate is preferably a wafer, and particularly preferably a silicon wafer.

[0057] Carrier substrate The carrier substrate consists of at least one carrier base substrate, a growth layer, and a transfer layer, particularly a pre-formed graphene layer, placed thereon. These layers are applied to the carrier substrate in a specific order. The aforementioned layers must necessarily be applied in the aforementioned order. However, further layers may exist between the aforementioned layers, particularly for other purposes. In particular, a release layer may be placed between the carrier base substrate and the protective layer.

[0058] In the first embodiment, the carrier substrate comprises at least one carrier base substrate, a release layer deposited thereon, a growth layer generated on the release layer, and a transfer layer disposed thereon, particularly in the form of a graphene layer generated thereon.

[0059] The first layer is the delamination layer, and its role is to allow the carrier-based substrate to be separated from the other layers during the delamination process.

[0060] The second layer is a growth layer on which a transfer layer is placed, or on which a graphene layer is grown or produced. The growth layer can have virtually any form and grain structure, but is preferably a single crystal. The growth layer is preferably a metal layer, and in a very particularly preferred embodiment, a metal layer in which carbon can dissolve. The solubility of carbon is preferably such that it decreases with decreasing temperature, particularly to allow precipitation on the surface of the growth layer.

[0061] One particularly desirable advantage of the growth layer or protective layer is that it acts as a barrier in the delamination method used. This layer prevents or reduces the passage of influences that are certainly necessary for the delamination process of the delamination layer but do not, if desired, act on the transfer layer or graphene layer. Such influences include thermal input, especially electromagnetic radiation, and especially laser light. Thus, the growth layer functions not only as a site for graphene growth but also as a barrier between the graphene layer and the site of the delamination process performed in the delamination layer. The particular advantage of the protective layer is that it is designed in relation to the delamination method used so that, on the one hand, the transfer layer can be generated, while at the same time this transfer layer is protected by the protective layer from the excessively strong influences of the delamination method.

[0062] The protective or growth layer also has the lowest possible roughness. Roughness is expressed as mean roughness, squared roughness, or mean roughness depth. Measurements of mean roughness, squared roughness, and mean roughness depth generally differ within the same measurement interval or surface, but are within the same order of magnitude. Therefore, the following numerical ranges of roughness should be understood as values ​​for mean roughness, squared roughness, or mean roughness depth. The roughness of the growth layer is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, and most preferably less than 10 nm.

[0063] Similarly, in order to keep the roughness of the growth layer formed on the release layer as low as possible, the roughness of the release layer is also kept as low as possible. In this case, the roughness of the release layer is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, and most preferably less than 10 nm. The release layer can, in principle, consist of any material that separates from the growth layer using the release method described above. However, preferably the release layer is not a polymer, because polymers cause unnecessary and undesirable contamination of the equipment used in the method according to the present invention. Therefore, the release layer preferably consists of a metal, alloy, or semiconductor material. For completeness, the most important material classes that can be used as the release layer are listed below.

[0064] 1. Semiconductor materials, especially 1.1 Ge, Si, α-Sn, B, Se, Te 2. Metals, especially 2.1 Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn 3. Compound semiconductors, especially 3.1 GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe 4. Polymers 4.1. Carbon-based polymers 4.2. Silicone-based polymers

[0065] The release layer most preferably consists of an epitaxially formed GaN layer. In this case, the GaN layer is epitaxially formed on a carrier substrate, particularly a sapphire substrate. By using a very thin GaN layer, the contaminating polymer layer can be eliminated.

[0066] In a further embodiment, the delamination layer is designed as a delamination region that eliminates the delamination layer when ions, preferably hydrogen ions, are injected into the growth layer and / or carrier substrate, causing damage to the growth layer and / or carrier substrate under thermal load. This process is known in the semiconductor industry as the SmartCut® process. Thus, the delamination region, along with the introduced ions, functions as a delamination layer.

[0067] If the peeling method uses electromagnetic radiation, particularly a laser, the transmission of electromagnetic radiation to the transfer layer can already be prevented or at least reduced by the thickness of the protective layer. In this case, the protective layer is thicker than 1 nm, preferably thicker than 100 nm, more preferably thicker than 1 μm, very preferably thicker than 100 μm, and most preferably thicker than 1 mm.

[0068] If the peeling method is a heat-based method, a protective layer made of a material with the lowest possible thermal conductivity can be used to extend heat transport at least until the peeling process is complete. The thermal conductivity is 0.1 W / (m·K) to 5000 W / (m·K), preferably 1 W / (m·K) to 2500 W / (m·K), more preferably 10 W / (m·K) to 1000 W / (m·K), and very preferably 100 W / (m·K) to 450 W / (m·K).

[0069] The third layer is a transfer layer or a graphene layer to be transferred, which is generated, laid, or deposited by any process.

[0070] In a second embodiment, at least one further layer, particularly a contact layer, is deposited on the graphene layer. Since the product substrate also includes a contact layer, the contact layer is preferably made of the same material as or very similar to the contact layer of the product substrate. Therefore, the contact layer is also preferably an oxide, particularly preferably silicon oxide. In particular, applying an oxide as the final layer on the graphene layer has the advantage of allowing the carrier substrate to be bonded to the product substrate by fusion bonding. In this case, the product substrate also preferably includes an oxide layer, which makes it particularly easy to create a connection between the two substrates.

[0071] The contact layer is preferably hydrophilic. An indicator of hydrophobicity or hydrophilicity is the contact angle formed between the test droplet, particularly water, and the measurement surface. Because the adhesion between the liquid and the hydrophilic surface is dominant over the cohesive force of the liquid, the hydrophilic surface flattens the droplet, resulting in a smaller contact angle. Because the cohesive force of the liquid is dominant over the adhesion between the liquid and the hydrophobic surface, the hydrophobic surface causes the droplet to become spherical. The contact angle is less than 90°, preferably less than 45°, more preferably less than 30°, very preferably less than 10°, and most preferably less than 5°. A hydrophilic contact layer is particularly beneficial for better and easier transfer.

[0072] The carrier base substrate is preferably made of a material with properties that are as optimal as possible for the peeling method used. When a thermal peeling process is performed, a material with high thermal conductivity is recommended in order to transfer heat to the peeling layer very quickly. The thermal conductivity is 0.1 W / (m·K) to 5000 W / (m·K), preferably 1 W / (m·K) to 2500 W / (m·K), more preferably 10 W / (m·K) to 1000 W / (m·K), and very preferably 100 W / (m·K) to 450 W / (m·K).

[0073] The graphene layer transfer process is described below.

[0074] process Carrier substrate manufacturing process In the first process step of the carrier substrate manufacturing process, the carrier base substrate is covered with a release layer.

[0075] In the second process step of the carrier substrate manufacturing process, a growth layer is applied, particularly deposited, on the exfoliation layer. The growth layer is preferably a single crystal. It is virtually impossible to produce a single crystal growth layer, especially on a polymer exfoliation layer. Therefore, in a particular embodiment, the growth layer is transferred to the exfoliation layer by a separate layer transfer process, rather than being generated on the exfoliation layer by a deposition process. In this case, the SmartCut® process is a possibility. Any other layer transfer process is also considered equally suitable.

[0076] In the third process step of the carrier substrate manufacturing process, a transfer layer is placed or generated on the growth layer. The transfer layer is preferably a graphene layer, which is generated or grown. Here, the growth of the graphene layer can be carried out by any known method of the prior art.

[0077] For example, carbon atoms could be dissolved at a higher temperature in the generated growth layer, and then the system could be cooled in a further intermediate step to a level below the solubility of carbon in the material. This would allow carbon to precipitate, especially on the surface, and form a graphene layer.

[0078] In another embodiment, carbon is not present in the growth layer, and carbon is supplied to the growth layer from an external source through an appropriate deposition process. For example, molecular beam epitaxy, PVD, or CVD processes may be used.

[0079] In an extended form of the third process step, an additional layer is deposited on the transfer layer or graphene layer, and this additional layer plays a role in optimizing contact, particularly in subsequent process steps. Therefore, this layer is called a contact layer. The contact layer is in particular an oxide layer, and preferably consists of the same material as the contact layer of the product substrate.

[0080] Layer transfer process The layer transfer process is described in detail below.

[0081] In the first process step, the carrier substrate is aligned with the product substrate. This alignment is performed mechanically and / or optically. It is preferable to use a dedicated alignment system that aligns the carrier substrate and the product substrate with alignment marks.

[0082] In the second process step, the carrier substrate is brought into contact with the product substrate. This contact can be made immediately and comprehensively, or by point contact. Preferably, fusion bonding equipment is used.

[0083] In the third process step, the carrier-based substrate is separated from the growth layer along the exfoliation layer using an exfoliation method, particularly a laser. In this process, the growth layer acts as a barrier to the graphene layer. Preferably, the growth layer is designed so that the exfoliation method used, especially the laser, does not damage or destroy the transfer layer or the graphene layer. This results in a layer structure with novel characteristics in contrast to the prior art. Each possible exfoliation method is described in detail below.

[0084] Peeling method In the first preferred delamination method, electromagnetic radiation, particularly lasers, is used. The carrier-based substrate is at least partially transparent to electromagnetic radiation, while the delamination layer preferably exhibits maximum absorption. The growth layer is also absorbent to electromagnetic radiation, and therefore the growth layer prevents photons that were not absorbed by the delamination layer from penetrating to the next transfer layer or graphene layer.

[0085] The delamination layer preferably has high solubility in water. Therefore, the use of a microwave source to locally introduce heat by capacitive heating of water would be a further possible option for delamination.

[0086] In a second, less desirable delamination method, an electric and / or magnetic field is applied to the delamination layer. In this case, the delamination layer is designed such that, when the intensity of a certain electric and / or magnetic field is exceeded, a physical effect occurs that leads to delamination of the delamination layer, or at least a reduction in the adhesion of the delamination layer to the growth layer and / or the first substrate.

[0087] A third, and least preferred, delamination method involves the use of heat. In this case, the heat source is preferably located on the surface of the carrier base substrate. Preferably, a heat sink, particularly an active cooler, is located on the surface of the product base substrate. Heat is preferably transported to the delamination layer, where separation occurs between the carrier substrate or delamination layer and the growth layer. The thermal load on the transfer layer or graphene layer is preferably minimal. Therefore, in this case, it is desirable that the growth layer be designed to have low thermal conductivity and, ideally, low heat storage capacity. This embodiment is less preferred because the resulting temperature rise causes thermal expansion in each layer of the layer system. Generally, each layer has a different coefficient of thermal expansion. If the delamination layer is polymer-based, thermal stress can certainly be relieved by flow, but the other layers of the layer system are far more susceptible to the effects of thermal stress.

[0088] In the fourth process step, the growth layer can be processed in a different manner.

[0089] In the first variation of the fourth process step, the growth layer is simply removed to expose the transfer layer or graphene layer. This removal can be carried out by chemical and / or physical processes. Removal of the growth layer is essential, especially when the transfer layer or graphene layer must be structured for the first time after layer transfer.

[0090] In a second variation of the fourth process step, the growth layer is structured by multiple process steps to function as an etching mask for the underlying transfer layer or graphene layer. After etching the transfer layer or graphene layer, the structured etching layer can be completely removed as it is no longer needed as an etching mask.

[0091] In the third variation of the fourth process step, the growth layer itself is left as a functional layer above the transfer layer or graphene layer and structured if necessary. However, in most cases, the growth layer is a conductor, i.e., a conductive, especially metallic, layer, which can short-circuit the structured transfer layer or graphene layer, especially across its entire surface, so in most cases the growth layer is removed.

[0092] In another embodiment, the delamination method is a simple mechanical separation. The two substrates are fixed together such that when stress, preferably tensile stress, is generated between the delamination layer and the growth layer when acted upon at least one of the substrates, the delamination layer separates from the growth layer. Naturally, it would be more advantageous if the separation occurred between the transfer layer and the growth layer. In this case, the delamination layer can be completely eliminated. Furthermore, it would be unnecessary to remove the growth layer from the transfer layer in a further process step. However, this preferred case rarely occurs because the adhesion between the transfer layer and the growth layer is usually very strong. The force used to separate the two substrates from each other is preferably applied in a small area, particularly point-like, at least one point on the periphery of the substrates. The force is then greater than 0.01 N, preferably greater than 0.1 N, more preferably greater than 1 N, very preferably greater than 10 N, and most preferably greater than 100 N. Mechanical separation can be carried out particularly easily when a predetermined fracture site is generated in the delamination layer. The predetermined fracture points can be created using a blade, particularly a razor blade, a wire, or a nozzle that presses a fluid onto the peeling layer.

[0093] However, the use of electromagnetic radiation is particularly preferred for delamination. In particular, the use of a laser as the delamination method is preferred. In this case, it is desirable that the carrier substrate has the highest possible transparency, more precisely, transmittance, to the electromagnetic radiation used. The carrier substrate is preferably a glass substrate, and most preferably a sapphire substrate. Transparency is preferably expressed in terms of transmittance, which indicates the ratio of transmitted radiation to irradiated radiation. However, transmittance is not a material-specific property as it depends on the thickness of the irradiated object. Therefore, the transmittance value is given per unit length of 1 cm. For a selected thickness of 1 cm and for each selected wavelength, the material has a transmittance of more than 10%, preferably more than 20%, more preferably more than 50%, very preferably more than 75%, and most preferably more than 99%.

[0094] Further advantages, features, and details of the present invention will become apparent from the following description of preferred embodiments and with reference to the drawings. [Brief explanation of the drawing]

[0095] [Figure 1] This figure schematically shows a first embodiment of the carrier substrate according to the present invention. [Figure 2] This figure schematically shows a second embodiment of the carrier substrate. [Figure 3] This figure schematically shows a first embodiment of the product substrate. [Figure 4] This figure schematically shows a second embodiment of the product substrate. [Figure 5] This figure schematically shows a third embodiment of the product substrate. [Figure 6a] This figure schematically shows the first process step of the first method according to the present invention. [Figure 6b] This figure schematically illustrates the second process step of the first method according to the present invention. [Figure 6c] This figure schematically shows the third process step of the first method according to the present invention. [Figure 6d] This figure schematically shows the fourth process step of the first method according to the present invention.

[0096] In the diagram, identical components or components having the same function are indicated by the same reference numeral.

[0097] In the figures, unnecessary components, particularly the substrate holder, are completely omitted as they are not necessary for explaining the process. Also, the drawings and their respective parts are not to scale. The non-scale representation makes the drawings easier to understand. In particular, the transfer layer 6, which is described below as an exemplary graphene layer 6, is shown as very thick, even though it is only a single atomic layer. Also, the protective layer 5 or growth layer 5 is shown as a single layer in the figures. This is a preferred embodiment in which the protective layer 5 is designed to function as both a protective and a growth layer 5. In any case, a protective layer 5 is provided. However, it is also conceivable to place an additional growth layer on top of the protective layer 5 to generate the transfer layer 6. However, it is preferable that the protective layer is also suitable for generating or growing the transfer layer 6.

[0098] Figure 1 shows a carrier substrate 1 with a fabricated layer system in a first embodiment. This layer system consists of a release layer 4 applied to a carrier base substrate 3. On the release layer 4 is a growth layer 5 or a protective layer 5. The growth layer 5 is preferably transferred onto the release layer 4 by a layer transfer process or deposited directly onto the release layer 4 by a physical or chemical deposition process. A transfer layer 6 or a graphene layer 6 is formed on the growth layer 5. The thicknesses of the carrier base substrate 3, release layer 4, growth layer 5, and especially the graphene layer 6 are not shown to scale. In particular, the graphene layer 6 as a single atomic layer is very thin and should ideally be shown only as a single line. However, to improve the illustration, the illustration to scale has been omitted.

[0099] Figure 2 shows a carrier substrate 1' having a fabricated layer system in a second embodiment. The carrier substrate 1' further comprises a contact layer 8 deposited or transferred on a transfer layer 6 or graphene layer 6.

[0100] Figure 3 shows the product substrate 2 in the first embodiment. The product substrate 2 consists of only the product base substrate 7.

[0101] Figure 4 shows the product substrate 2' in the second embodiment. The product substrate 2' consists of a product base substrate 7 and a contact layer 8 deposited or transferred thereon. The contact layer 8 is preferably a dielectric layer, and most preferably a silicon oxide layer.

[0102] Figure 5 shows a product substrate 2'' in a third embodiment. The product substrate 2'' consists of a product base substrate 7'. Functional components 9 have already been manufactured on the product base substrate 7'. Preferably, a contact layer 8' is deposited on the product base substrate 7'. This contact layer 8' preferably comprises conductive vias 10, which are used to connect the functional components 9 to the transfer layer or graphene layer (not shown) to be transferred. In this embodiment, the contact layer 8' may be omitted. In this case, the vias 10 are also absent, and the transfer layer or graphene layer (not shown) to be transferred will be in direct contact with the contact points of the functional components 9 (not shown). The contact layer 8' is also preferably a dielectric layer, most preferably a silicon oxide layer.

[0103] Figures 6a to 6d below illustrate a first method or process for transferring a transfer layer, using a carrier substrate 2' and a product substrate 2' as examples. However, this process can be carried out with any combination of carrier substrates and product substrates, as long as the layer system consisting of the release layer 4, the growth layer 5, and the transfer layer 6 or graphene layer 6 to be transferred exists in this particular order, and can also be carried out with carrier substrates and / or product substrates not explicitly shown.

[0104] Furthermore, in the following diagrams, the product substrate 2' is shown on the upper side and the carrier substrate 1' on the lower side. It is also possible that the carrier substrate 1' is on the upper side and the product substrate 1' is on the lower side. Also, for clarity, the substrate holder, bonding device, and alignment device are omitted from the diagrams.

[0105] Figure 6a shows a first process step of a first method or first process for transferring a transfer layer, aligning a product substrate 2', consisting of a product base substrate 7 and a contact layer 8, with respect to a carrier substrate 1. The contact layer 8 is preferably an oxide, most preferably silicon oxide. The carrier substrate 1 consists of a carrier base substrate 3, a release layer 4, a growth layer 5, and a transfer layer 6 or graphene layer 6 to be transferred. How the graphene layer 6 is generated or transferred onto the growth layer 5 is irrelevant to understanding the process and is therefore not described in detail. Alignment can be performed mechanically and / or optically. In the case of optical alignment, alignment marks (not shown) are present on the product substrate 2' and the carrier substrate 1.

[0106] Figure 6b shows the second process step of the first process, in which the carrier substrate 1 and the product substrate 2' are brought into contact. How precisely the contact is made is not relevant to the process and is therefore not shown in the figure. However, the contact is preferably made by a device that bends at least one of the two substrates 1 and 2'. Therefore, the contact process is preferably carried out using fusion bonding equipment. In a very particularly preferred embodiment of this process, the upper product substrate 2' is bent in particular, while the lower carrier substrate 1 is fixed entirely.

[0107] Figure 6c shows the third process step of the first process. A peeling means 11 is applied to the peeling layer 4. The peeling means 11 is preferably a laser. The peeling means is applied to the peeling layer 4, preferably via the carrier base substrate 3. In this process, the growth layer 5 acts as a protective shield for the graphene layer 6 behind it. Since the graphene layer 6 is a single atomic layer, it can be destroyed by the high-strength peeling means 11. Therefore, the growth layer 5, which is also used to produce the graphene layer 6, is preferably used as a protective shield. Thus, the growth layer 5 must be designed so that the peeling means 11 used each time is blocked in the best possible way during the peeling process, or so that the impact on the transfer layer 6 from the peeling means 11 is reduced at least very significantly. If the peeling means 11 is a laser, it is desirable that the growth layer 5 has the lowest possible transmittance to the photons of the laser 11. If the peeling means 11 is heat introduced by, for example, a heat source, it is desirable that the growth layer 5 has the lowest possible thermal conductivity to make it difficult to transport heat to the graphene layer 6.

[0108] It will be apparent to those skilled in the art that any number of other layers may exist between the release layer 4 and the growth layer 5, which may play a specific role in protecting the transfer layer 6. Therefore, it is conceivable to insert a further layer between the release layer 4 and the growth layer 5 that absorbs the laser beam or heat of the release means 11 very well. However, for simplicity, so as not to complicate the explanation or illustration, this property is combined into a single growth layer 5. In particular, it is advantageous that the growth layer 5, preferably used for growing the graphene layer 6, simultaneously functions as its protective layer for the release means 11 used. This allows for a very cost-effective process, as it eliminates the need to deposit additional, high-cost layers. Another advantage is that the growth layer 5 is particularly preferably a metal layer, and very preferably a nickel layer. As is well known, metals are very good infrared absorbers. The most preferred release means 11 is a laser, preferably an infrared laser. Therefore, in this special case, the metal growth layer 11 can function simultaneously as both the growth layer 5 and the protective layer due to its solid properties. If the peeling means 11 is a heat source, the metal growth layer 5 will naturally not be optimal due to its relatively high thermal conductivity. In this case, it is preferable to insert an additional layer, particularly a layer with low thermal conductivity, between the growth layer 5 and the peeling layer 4.

[0109] Figure 6d shows a first modification of the fourth process step of the first process, where the transferred growth layer 5 (not shown) has already been removed. Thus, the transferred layer 6, or graphene layer 6, is obtained on the product substrate 2e, which is the final product of the process. The product substrate 2e, in particular the transferred graphene layer 6, can then be further processed in further process steps. The other two modifications concerning the use of the growth layer 5, which have already been mentioned, are not shown graphically here because no further conclusions regarding the practical methods can be drawn from them. [Explanation of symbols]

[0110] 1. Carrier board 2,2',2'',2e Product substrate 3. Carrier-based substrate 4. Exfoliation layer 5 Growth layer, protective layer 6. Transfer layer, graphene layer 7,7' Product base board 8,8' contact layer 9 Functional Units 10 Beers 11. Peeling means

Claims

1. A carrier substrate (1) for transferring a transfer layer (6) from a carrier substrate (1) to a product substrate (2, 2', 2'', 2e), wherein the carrier substrate (1) comprises at least the following layers in the following order: - Carrier-based substrate (3) - Protective layer (5), and - The aforementioned transfer layer (6) In the carrier substrate (1) provided therein, the transfer layer (6) is grown on the protective layer (5), where the protective layer (5) is composed of a plurality of individual layers. The carrier substrate (1) comprises at least one release layer (4) disposed between the carrier base substrate (3) and the protective layer (5), The transfer layer (6) is peelable from the carrier base substrate (3) together with the protective layer (5) by a peeling means (11) acting on the peeling layer (4) and / or the peeling region. A carrier substrate (1) characterized in that the peeling means (11) is a laser.

2. The carrier substrate (1) according to claim 1, wherein the transfer layer (6) is a graphene layer (6).

3. The carrier substrate (1) according to claim 1 or 2, wherein the roughness of the protective layer (5) on the surface facing the transfer layer (6) is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, and most preferably less than 10 nm.

4. The carrier substrate (1) according to any one of claims 1 to 3, wherein the protective layer (5) is made of a material in which carbon can dissolve.

5. The carrier substrate (1) according to any one of claims 1 to 4, wherein the protective layer (5) is designed to be impermeable to electromagnetic radiation.

6. The carrier substrate (1) according to any one of claims 1 to 5, wherein a contact layer (8, 8') made of a dielectric material, preferably silicon oxide, is disposed on the surface of the transfer layer (6) opposite to the protective layer (5).

7. The carrier substrate (1) according to any one of claims 1 to 6, wherein the protective layer (5) is a single-crystal metal layer, preferably made of nickel.

8. A method for manufacturing a carrier substrate (1) for transferring a transfer layer (6) from a carrier substrate (1) according to any one of claims 1 to 7 to product substrates (2, 2', 2'', 2e), i) The step of providing a carrier base substrate (3), ii) The step of applying a protective layer (5) to the carrier base substrate (3), iii) The step of growing a transfer layer (6), particularly a graphene layer, on the protective layer (5) The protective layer (5) is composed of a plurality of individual layers. A method comprising covering the carrier base substrate (3) with a release layer (4) before applying the protective layer (5) in step ii), and then applying the protective layer (5) on the release layer (4).

9. The method according to claim 8, wherein the protective layer (5) is recrystallized before the growth of the transfer layer (6) in step iii).

10. The method according to claim 8 or 9, wherein a contact layer (8, 8') is deposited on the surface of the transfer layer (6) opposite to the protective layer (5).

11. A method for transferring a transfer layer (6) from a carrier substrate (1) to a product substrate (2, 2', 2'', 2e) according to any one of claims 1 to 7, - The carrier substrate (1) is brought into contact with the product substrate (2, 2', 2'', 2e) such that the transfer layer (6) faces the product substrate (2, 2', 2'', 2e), - A method wherein at least one peeling means (11) acts on the carrier substrate (1) to peel the transfer layer (6) together with the protective layer (5) from the carrier base substrate (3).

12. A method for transferring a transfer layer (6) according to claim 11, wherein the carrier substrate (1) is brought into contact with the product substrate (2, 2', 2'', 2e) via a contact layer (8, 8') applied on the transfer layer (6), or the carrier substrate (1) is brought into contact with a further contact layer (8, 8') applied on the product base substrate (7, 7') of the product substrate (2, 2', 2'', 2e) via a contact layer (8, 8') applied on the transfer layer (6).

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