Thin film deposition apparatus and control method for the thin film deposition apparatus

Abstract

To provide a film deposition apparatus for improving an in-plane uniformity of thickness and composition in a film deposition apparatus of simultaneously sputtering targets of different materials.SOLUTION: A film deposition apparatus includes a first holder for holding a first target formed by a first material, a second holder for holding a second target formed by a second material that is different from the first material, and a mounting table that holds a substrate and can be rotated around a center axis of the mounting table as a rotation axis. A distance between the center axis of the mounting table and a center of a sputtering surface of the first target is different from a distance between the center axis of the mounting table and a center of a sputtering surface of the second target.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a film forming apparatus and a method for controlling the film forming apparatus.

Background Art

[0002] Patent Document 1 discloses a sputtering apparatus having a plurality of targets.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] On one aspect, the present disclosure provides a film forming apparatus and a method for controlling the film forming apparatus that improve in-plane uniformity of film thickness and composition in a film forming apparatus that simultaneously sputters targets of different materials.

Means for Solving the Problems

[0005] To solve the above problems, according to one aspect, a first holder that holds a first target formed of a first material, a second holder that holds a second target formed of a second material different from the first material, a stage that holds a substrate and is rotatable about a stage center axis as a rotation axis, A first magnet that swings on the back side of the first holder, and a second magnet that swings on the back side of the second holder, are provided, the emission angle distribution of sputtered particles emitted from the first target is larger than the emission angle distribution of sputtered particles emitted from the second target, and the distance from the stage center axis to the center of the sputtering surface of the first target is smaller than the distance from the stage center axis to the center of the sputtering surface of the second target The oscillation range of the first magnet is smaller than the oscillation range of the second magnet. A film forming apparatus is provided.

Effects of the Invention

[0006] In one aspect, in a film deposition apparatus that simultaneously sputters targets of different materials, it is possible to provide a film deposition apparatus and a control method for the film deposition apparatus that improve the in-plane uniformity of film thickness and composition. [Brief explanation of the drawing]

[0007] [Figure 1] An example of a schematic cross-sectional view of a film deposition apparatus. [Figure 2] An example of a schematic plan view showing the arrangement of two holders and two magnets in a film deposition apparatus. [Figure 3] An example of a schematic cross-sectional diagram illustrating the arrangement of the target and the mounting platform. [Figure 4] A graph showing an example of film deposition results. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] The film deposition apparatus (substrate processing apparatus, sputtering apparatus) 100 will be explained using Figure 1. Figure 1 is an example of a schematic cross-sectional view of the film deposition apparatus 100. The film deposition apparatus 100 is a PVD (Physical Vapor Deposition) apparatus, and is a sputtering apparatus that deposits a film by adhering (depositing) sputtered particles (film deposition atoms) emitted from targets T1 and T2 in a processing container 110 onto the surface of a substrate W such as a semiconductor wafer placed on a mounting stage 121. Furthermore, the film deposition apparatus 100 is a sputtering apparatus that deposits a compound film on the substrate W using co-sputtering (simultaneous sputtering) technology, which simultaneously sputters targets T1 and T2 of different materials.

[0010] The film deposition apparatus 100 includes a processing container 110 having an internal space 110a for performing film deposition on a substrate W. The film deposition apparatus 100 also includes a stage mechanism 120, a target holding part 130, a target covering part 140, a gas supply part 150, a gas discharge part 160, and a magnet mechanism 170, which are configured to perform film deposition on the substrate W within the processing container 110. Furthermore, the film deposition apparatus 100 has a control unit 180 that controls the operation of each component.

[0011] The processing container 110 of the film deposition apparatus 100 is made of, for example, aluminum. The processing container 110 is connected to ground potential; that is, the processing container 110 is grounded. The processing container 110 includes an inlet / outlet 111 that connects the internal space 110a to the outside of the processing container 110, and a gate valve 112 that opens and closes the inlet / outlet 111. When the gate valve 112 is open, the film deposition apparatus 100 uses a transport device (not shown) to load and unload substrates W through the inlet / outlet 111. The processing container 110 also has a conical section 113, which is roughly conical in shape (for example, roughly square pyramidal, conical, etc.), on the ceiling above the stage mechanism 120.

[0012] Furthermore, the film deposition apparatus 100 has a target central axis Ax1 and a mounting stage central axis Ax2.

[0013] The target central axis Ax1 is an axis that is rotationally symmetric with respect to target T1 and target T2. That is, it is the axis where the distance from target T1 to target central axis Ax1 is equal to the distance from target T2 to target central axis Ax1. Also, the target central axis Ax1 passes through the center (apex) of the conical portion 113.

[0014] The central axis Ax2 of the mounting stage is an axis that passes through the center of the substrate W placed on the stage mechanism 120 and extends vertically. The central axis Ax2 of the mounting stage is also the axis of rotation when the substrate W rotates.

[0015] The stage mechanism unit 120 includes a mounting table 121 disposed within the processing container 110 and a support drive unit 122 that operably supports the mounting table 121. The mounting table 121 includes a substantially disk-shaped base portion 121a and an electrostatic chuck 121b fixed on the base portion 121a.

[0016] The base portion 121a is formed of, for example, aluminum. The base portion 121a is fixed to the upper end of the support drive unit 122. By moving the base portion 121a by the support drive unit 122, the electrostatic chuck 121b is disposed at a predetermined height position in the internal space 110a. The stage mechanism unit 120 may include a temperature control mechanism (not shown) that adjusts the temperature of the base portion 121a to control the temperature of the substrate W placed on the mounting table 121.

[0017] The electrostatic chuck 121b includes a dielectric film and an electrode provided in the inner layer of the dielectric film (both not shown). A DC power supply 123 is connected to the electrode of the electrostatic chuck 121b. The electrostatic chuck 121b generates an electrostatic force in the dielectric film by the DC voltage supplied from the DC power supply 123 to electrostatically adsorb the substrate W placed on the upper surface of the electrostatic chuck 121b. The center of the upper surface of the electrostatic chuck 121b (the mounting surface of the substrate W) coincides with the mounting table central axis Ax2.

[0018] The support drive unit 122 has a columnar support shaft 124 that holds the base portion 121a and an operating device 125 that operates the support shaft 124. The support shaft 124 extends along the vertical direction and extends from the internal space 110a of the processing container 110 through the bottom 114 to the outside of the processing container 110. The axis of the support shaft 124 overlaps with the mounting table central axis Ax2. <00,00087>

[0019] The operating device 125 is provided outside the processing container 110. The operating device 125 holds the lower end side of the support shaft 124. The operating device 125 rotates the support shaft 124 around the mounting table central axis Ax2 based on the control of the control unit 180. Also, the operating device 125 moves up and down (vertically). The mounting table 121 rotates and moves up and down within the processing container 110 by the operation of the operating device 125.

[0020] Further, the stage mechanism unit 120 includes a sealing structure 126 that seals a gap between the bottom portion 114 of the processing container 110 and the support shaft 124 while enabling the support shaft 124 to operate. As the sealing structure 126, for example, a magnetic fluid seal can be applied.

[0021] The target holding units 130 of the film forming apparatus 100 hold a plurality of targets T1 and T2, which are cathode targets, at positions spaced upward from the mounting table 121. The film forming apparatus 100 shown in FIG. 1 includes two target holding units 130. One target holding unit 130 includes a metal holder (first holder) 131 that holds a target (first target) T1, and an insulating member 132 that fixes the outer peripheral portion of the holder 131 and supports the holder 131. Similarly, the other target holding unit 130 includes a metal holder (second holder) 131 that holds a target (second target) T2, and an insulating member 132 that fixes the outer peripheral portion of the holder 131 and supports the holder 131.

[0022] The targets T1 and T2 held by each of the holders 131 are formed of a material having a film forming substance. Each of the targets T1 and T2 has a rectangular flat plate shape.

[0023] The target T1 is formed of a first material. The target T2 is formed of a second material different from the first material. In the following description, the target T1 is formed of a material containing silicon (Si), the target T2 is formed of a material containing tungsten (W), and the film forming apparatus 100 will be described as forming a tungsten silicide (WSi) film on a substrate W. Note that the tungsten silicide (WSi) film can be used, for example, as a hard mask.

[0024] Each of the holders 131 is formed in a rectangular shape that is slightly larger than the targets T1 and T2 when viewed from above. Each of the holders 131 is fixed to the inclined surface of the conical portion 113 via an insulating member 132. Because each of the holders 131 is fixed to the inclined surface of the conical portion 113, each of the holders 131 holds the surface of the targets T1 and T2 (the sputtered surface exposed to the internal space 110a) in an inclined state with respect to the target central axis Ax1.

[0025] Furthermore, one target holding unit 130 has a power supply (first power supply) 133 that applies a negative DC voltage to the holder 131 that holds target T1. Similarly, the other target holding unit 130 has a power supply (second power supply) 133 that applies a negative DC voltage to the holder 131 that holds target T2. Note that the power supply 133 may be a single power supply that selectively applies voltage to targets T1 and T2, respectively.

[0026] Figure 2 is an example of a schematic plan view showing the arrangement of two holders 131 and two magnets 171 of the film deposition apparatus 100. As shown in Figure 2, the target holding section 130 evenly arranges multiple holders 131 (and targets T1, T2) along a virtual circle ic centered on the target central axis Ax1. That is, each of the two holders 131 (and targets T1, T2) is positioned at an angle of 180 degrees on the virtual circle ic. Furthermore, each of the two holders 131 (and targets T1, T2) is provided such that the long side of the holder 131 extends parallel to the tangent to the virtual circle ic. Each of the two targets T1, T2 is held at the same position as the holder 131, facing diagonally downwards (see also Figure 3).

[0027] Returning to Figure 1, the target cover portion 140 of the film deposition apparatus 100 includes a shutter body 141 placed inside the processing container 110 and a shutter drive unit 142 that operably supports the shutter body 141.

[0028] The shutter body 141 is provided between the targets T1, T2 and the mounting base 121. The shutter body 141 is formed in a conical shape substantially parallel to the inclined surface of the conical portion 113 of the processing container 110. The shutter body 141 can face the sputtering surface of the targets T1, T2. The shutter body 141 also has two openings 141a that are slightly larger than the targets T1, T2. The shutter body 141 has the two openings 141a evenly spaced along a virtual circle ic centered on the target central axis Ax1. That is, each of the two openings 141a is positioned at an angle of 180 degrees on the virtual circle ic. Furthermore, each of the two openings 141a is provided such that the longer side of the opening 141a extends parallel to the tangent of the virtual circle ic.

[0029] The shutter drive unit 142 comprises a columnar rotating shaft 143 and a rotating part 144 that rotates the rotating shaft 143. The axis of the rotating shaft 143 coincides with the target central axis Ax1 of the processing container 110. The rotating shaft 143 extends vertically and fixes the center (apex) of the shutter body 141 at its lower end. The rotating shaft 143 protrudes outside the processing container 110 through the center of the conical part 113.

[0030] The rotating part 144 is located outside the processing container 110 and rotates the rotating shaft 143 relative to its upper end (connector 155a) which holds the rotating shaft 143, via a rotation transmission part (not shown). As a result, the rotating shaft 143 and the shutter body 141 rotate around the target central axis Ax1.

[0031] When sputtering is performed, the target cover portion 140 adjusts the circumferential position of the opening 141a based on the control unit 180, so that one opening 141a faces the target T1 and the other opening 141a faces the target T2. This exposes the sputtering surface of target T1 and the sputtering surface of target T2. The target cover portion 140 also adjusts the circumferential position of the opening 141a based on the control unit 180, and rotates it by 90° from the aforementioned position to cover the sputtering surface of target T1 and the sputtering surface of target T2.

[0032] The gas supply unit 150 of the film deposition apparatus 100 includes an excitation gas unit 151 provided in the conical section 113 for supplying excitation gas.

[0033] The excitation gas section 151 includes piping 152 for circulating gas outside the processing container 110. The excitation gas section 151 also includes, in order from the upstream side to the downstream side of the piping 152, a gas source 153, a flow controller 154, and a gas introduction section 155.

[0034] The gas source 153 stores an excitation gas (e.g., argon gas). The gas source 153 supplies gas to the piping 152. The flow controller 154, for example, a mass flow controller, adjusts the flow rate of gas supplied into the processing container 110. The gas inlet 155 introduces gas into the processing container 110 from the outside. The gas inlet 155 consists of a connector 155a connected to the piping 152 outside the processing container 110, and a gas passage 143a formed within the rotating shaft 143 of the target cover 140.

[0035] The gas discharge unit 160 of the film deposition apparatus 100 includes a pressure reducing pump 161 and an adapter 162 for fixing the pressure reducing pump 161 to the bottom 114 of the processing container 110. The gas discharge unit 160 reduces the pressure of the internal space 110a of the processing container 110 under the control of the control unit 180.

[0036] The magnetic mechanism 170 of the film deposition apparatus 100 applies a magnetic field to each of the targets T1 and T2. By applying a magnetic field to each of the targets T1 and T2, the magnetic mechanism 170 induces plasma in the targets T1 and T2. The magnetic mechanism 170 includes a magnet 171 (cathode magnet) and an operating part 172 that movably holds the magnet 171 for each of the plurality of holders 131. Specifically, one magnetic mechanism 170 includes a magnet (first magnet) 171 positioned on the back surface of the holder 131 that holds target T1, and an operating part (first operating part) 172 that movably holds this magnet 171. Similarly, the other magnetic mechanism 170 includes a magnet (second magnet) 171 positioned on the back surface of the holder 131 that holds target T2, and an operating part (second operating part) 172 that movably holds this magnet 171.

[0037] The two magnets 171 are positioned so as to overlap with targets T1 and T2 on the virtual circular IC.

[0038] Each of the magnets 171 is formed to be the same shape as the others. Furthermore, each of the magnets 171 generates a similar magnetic force to the others. Specifically, each of the magnets 171 has a roughly rectangular shape when viewed from above. When the operating part 172 is held, the longer side of the magnet 171 extends parallel to the shorter direction of the rectangular targets T1 and T2, while the shorter side of the magnet 171 extends parallel to the longer direction of the rectangular targets T1 and T2.

[0039] Each of the magnets 171 can be fitted with a permanent magnet. The materials constituting each of the magnets 171 are not particularly limited as long as they have an appropriate magnetic force, and examples include iron, cobalt, nickel, samarium, neodymium, etc.

[0040] Each of the operating units 172 that holds the magnets 171 reciprocates the held magnet 171 along the longitudinal direction of the targets T1 and T2. That is, the magnets 171 are provided to be movable. The operating units 172 that hold each of the magnets 171 also move the held magnet 171 away from and closer to the targets T1 and T2. Specifically, each of the operating units 172 includes a reciprocating mechanism 174 that holds the magnet 171 and moves the magnet 171 back and forth, and a moving-away mechanism 175 that holds the reciprocating mechanism 174 and moves the reciprocating mechanism 174 away from and closer to the targets T1 and T2.

[0041] The control unit 180 consists of a computer and controls each component of the film deposition apparatus 100. The control unit 60 has a main control unit consisting of a CPU that actually performs these controls, as well as an input device, an output device, a display device, and a storage device. The storage device stores parameters for various processes performed by the film deposition apparatus 100, and a storage medium containing a program for controlling the processes performed by the film deposition apparatus 100, i.e., a processing recipe, is set in the storage medium. The main control unit of the control unit 180 calls a predetermined processing recipe stored in the storage medium and causes the film deposition apparatus 100 to execute a predetermined process based on that processing recipe.

[0042] Next, an example of a film deposition process using the film deposition apparatus 100 will be described. The inside of the processing container 110 is evacuated to a predetermined vacuum level by the gas discharge section 160.

[0043] First, the control unit 180 prepares the substrate W on the mounting table 121. Specifically, the control unit 180 opens the gate valve 112. The substrate W is transported into the processing container 110 via the loading port 111 by a transport device (not shown) and placed on the mounting table 121. The control unit 180 controls the power supply (not shown) of the electrostatic chuck 121b to electrostatically attract the substrate W to the mounting table 121. When the transport device moves away from the loading port 111, the control unit 180 closes the gate valve 112. The control unit 180 also controls the support drive unit 122 to raise the mounting table 121 to a predetermined height.

[0044] Next, the control unit 180 performs a film deposition process on the substrate W. Specifically, the control unit 180 controls the support drive unit 122 to rotate the mounting table 121 that holds the substrate W. The control unit 180 also controls the flow rate controller 154 to supply an excitation gas (e.g., argon gas) into the processing container 110. The control unit 180 also controls the power supply 133 to apply a negative DC voltage to the holder 131 that holds the targets T1 and T2. As a result, ions in the excitation gas that have dissociated around the targets T1 and T2 collide with the targets T1 and T2, and sputtered particles are emitted from the targets T1 and T2 into the internal space 110a. As a result, the sputtered particles adhere to (deposit) the substrate W, and a film is formed on the substrate W.

[0045] Furthermore, during the film deposition process, the control unit 180 controls the operating unit 172 to cause the magnet 171 to oscillate (reciprocate). This induces plasma using the magnetic field of the magnet 171. In other words, the sputter discharge regions of targets T1 and T2 are controlled by controlling the oscillation range of the magnet 171.

[0046] When the film deposition process is complete, the control unit 180 controls the flow rate controller 154 to stop the supply of excitation gas. The control unit 180 also controls the power supply 133 to stop the application of voltage to the holder 131. The control unit 180 also controls the support drive unit 122 to stop the rotation of the mounting table 121. Next, the control unit 180 controls the support drive unit 122 to lower the mounting table 121 to a predetermined position. The control unit 180 also controls the power supply (not shown) to the electrostatic chuck 121b to release the electrostatic attraction. The control unit 180 opens the gate valve 112. The substrate W is discharged from the processing container 110 via the loading / unloading port 111 by a transport device (not shown). When the transport device moves away from the loading / unloading port 111, the control unit 180 closes the gate valve 112.

[0047] As described above, the film deposition apparatus 100 emits sputtered particles from targets T1 and T2, deposits the sputtered particles onto the surface of the substrate W, and forms a film.

[0048] Next, the arrangement of targets T1 and T2 and the mounting base 121 will be further explained using Figure 3. Figure 3 is an example of a schematic cross-sectional view illustrating the arrangement of targets T1 and T2 and the mounting base 121.

[0049] Here, the central axis Ax11 is an axis that passes through the center of the sputtering surface of target T1 and is perpendicular to the sputtering surface of target T1. The central axis Ax12 is an axis that passes through the center of the sputtering surface of target T2 and is perpendicular to the sputtering surface of target T2. Furthermore, the distance (horizontal distance) from the center of the sputtering surface of target T1 to the central axis Ax2 of the mounting stage is defined as distance L1. The distance (horizontal distance) from the center of the sputtering surface of target T2 to the central axis Ax2 of the mounting stage is defined as distance L2.

[0050] Furthermore, the oscillation range of the magnet 171 corresponding to target T1 is denoted as oscillation range S1. The oscillation range of the magnet 171 corresponding to target T2 is denoted as oscillation range S2. As mentioned above in Figure 2, the direction of movement of the magnet 171 is in the longitudinal direction of targets T1 and T2 (the direction perpendicular to the plane of the paper in Figure 1; the vertical direction of the plane of the paper in Figure 2). In Figure 3, however, the oscillation range S1 is schematically illustrated by rotating target T1, holder 131, and magnet 171 90° around the central axis Ax11. Similarly, the oscillation range S2 is schematically illustrated by rotating target T2, holder 131, and magnet 171 90° around the central axis Ax12.

[0051] Furthermore, the angular distribution D1 shows the emission of silicon (Si) by sputtering from target T1. The angular distribution D2 shows the emission of tungsten (W) by sputtering from target T2.

[0052] Here, as shown in Figure 2, the magnet 171 has its north pole positioned on the inside and its south pole on the outside. Based on this arrangement of the magnet 171, the magnetic field formed causes the emission angle distribution of sputtered particles to have two peaks, as shown in Figure 3.

[0053] Furthermore, as shown in Figure 3, the emission angle distribution of sputtered particles differs depending on the target material. Here, the emission angle distribution of sputtered particles is defined as the angle of opening between the two peaks in the angle distribution of sputtered particles emitted from targets (T1, T2). That is, the closer the two peaks are to the normal direction of the sputtering surface, the smaller the angle of opening between the two peaks becomes, and the smaller the emission angle distribution of sputtered particles becomes. On the other hand, the further the two peaks are from the normal direction of the sputtering surface, the larger the angle of opening between the two peaks becomes, and the larger the emission angle distribution of sputtered particles becomes. In the example shown in Figure 3, the emission angle distribution of target T1, which is made of silicon (Si), is larger than that of target T2, which is made of tungsten (W) (emission angle distribution of sputtered particles of target T1 > emission angle distribution of sputtered particles of target T2). Note that the emission angle distribution (opening angle) is determined by the target material.

[0054] The angular distribution D1 of silicon (Si) particles shows a higher frequency in the direction inclined with respect to the normal direction (central axis Ax11) of the sputtering surface of target T1. In other words, silicon (Si) particles are emitted in a direction inclined from the normal direction of the sputtering surface of target T1.

[0055] On the other hand, the angular distribution D2 of tungsten (W) shows a higher frequency in the direction normal to the sputtering surface of target T2 (central axis Ax12). In other words, tungsten (W) is emitted in the direction normal to the sputtering surface of target T2.

[0056] Therefore, in a film deposition apparatus configuration in which the target central axis Ax1 (see Figure 1) and the mounting stage central axis Ax2 (see Figures 1 and 2) are arranged in the same straight line, the compound film deposited on the substrate W will be unevenly distributed depending on the target material, making it difficult to achieve both in-plane uniformity of film thickness and in-plane uniformity of composition.

[0057] In contrast, in the film forming apparatus 100 of the present embodiment, as shown in FIG. 1, the target central axis Ax1 and the mounting table central axis Ax2 are arranged so as not to coincide, that is, not to be in a straight line. That is, the mounting table central axis Ax2 is offset in the horizontal direction with respect to the target central axis Ax1.

[0058] Specifically, when the emission angle distribution of the sputtered particles of the target T1 is larger than the emission angle distribution of the sputtered particles of the target T2, as shown in FIG. 3, the distance L1 is arranged to be smaller (shorter) than the distance L2 (L1 < L2).

[0059] Further, when the emission angle distribution of the sputtered particles of the target T1 is larger than the emission angle distribution of the sputtered particles of the target T2, as shown in FIGS. 2 and 3, the control unit 180 controls the respective operation units 172 so that the swing width S1 of the magnet 171 corresponding to the target T1 is smaller than the swing width S2 of the magnet 171 corresponding to the target T2 (S1 < S2). That is, when the emission angle distribution of the target T1 is smaller than the emission angle distribution of the target T2, the sputter discharge region of the target T1 is controlled to be smaller than the sputter discharge region of the target T2.

[0060] Here, shortening the horizontal distance from the center of the target sputtering surface to the central axis Ax2 of the mounting stage shortens the optimal height distance (TS) between the center of the substrate W and the center of the target sputtering surface. Therefore, in a target T1 made of a material with a wide sputtering particle emission angle distribution, shortening the horizontal distance L1 from the center of the target sputtering surface to the central axis Ax2 of the mounting stage while maintaining the height distance (TS) between the center of the substrate W and the center of the target sputtering surface results in film properties (film thickness, in-plane uniformity of composition) that approach those of a film deposited on the substrate W using a material with a narrow sputtering particle emission angle distribution. Furthermore, in a target T2 made of a material with a narrow sputter particle emission angle distribution, if the horizontal distance L2 from the center of the target's sputter surface to the central axis Ax2 of the mounting stage is increased while maintaining the height distance (TS) between the center of the substrate W and the center of the target's sputter surface, the properties of the film deposited on the substrate W (in-plane uniformity of film thickness and composition) will approach those of a film deposited on the substrate W using a material with a wide sputter particle emission angle distribution (in-plane uniformity of film thickness and composition).

[0061] Therefore, by arranging targets T1, T2 and the mounting stage 121 such that the distance L1 is smaller (shorter) than the distance L2, the in-plane uniformity of film thickness and composition can be improved in a film deposition apparatus that simultaneously sputters targets T1 and T2 of different materials.

[0062] Furthermore, by controlling the oscillation widths S1 and S2 of the magnet 171 to narrow the sputtering discharge region of target T1, which has a wide sputtering particle emission angle distribution, and to widen the sputtering discharge region of target T2, which has a narrow sputtering particle emission angle distribution, it is possible to improve the in-plane uniformity of film thickness and composition in a film deposition apparatus that simultaneously sputters targets T1 and T2 of different materials.

[0063] In this embodiment, the film deposition apparatus 100 was described as having distance L1 smaller (shorter) than distance L2 and oscillation width S1 smaller than oscillation width S2 when the emission angle distribution of target T1 is larger than the emission angle distribution of target T2. However, it is not limited to this, and only one of these may be applied. That is, when the emission angle distribution of target T1 is larger than the emission angle distribution of target T2, distance L1 may be smaller (shorter) than distance L2. Also, when the emission angle distribution of target T1 is larger than the emission angle distribution of target T2, oscillation width S1 may be smaller than oscillation width S2.

[0064] Furthermore, the film deposition apparatus 100 may be equipped with a moving mechanism (not shown) that moves the mounting table 121 (stage mechanism 120) horizontally so that the mounting table central axis Ax2 can be moved with respect to the target central axis Ax1. The film deposition apparatus 100 may also be equipped with a moving mechanism (not shown) that moves the target holding unit 130 and the magnet mechanism 170 with respect to the mounting table central axis Ax2. For example, it may be equipped with a moving mechanism that moves the target holding unit 130 and the magnet mechanism 170 in a direction perpendicular to the oscillation direction of the magnet 171 (tangential direction of the virtual perfect circle ic).

[0065] Furthermore, although it has been explained that target T1 is formed from silicon (Si) material and target T2 is formed from tungsten (W) material, this is not limited to this. Targets T1 and T2 may be made from other materials.

[0066] Furthermore, although the film deposition apparatus 100 was described using a configuration with two target holding units 130 as an example, it is not limited to this configuration and may have three or more.

[0067] Next, an example of film deposition using the deposition apparatus 100 will be explained using Figure 4. Figure 4 is a graph showing an example of the film deposition results. Here, the height distance (TS) between the center of the substrate W and the centers of the sputtering surfaces of targets T1 and T2 was set to 200 mm, and targets T1 and T2 were sputtered simultaneously to deposit a tungsten silicide film on the substrate W. The horizontal axis shows the oscillation width S1 of the magnet 171 of target T1. The black squares indicate the non-uniformity of the silicon film thickness (Si NU). The white squares indicate the non-uniformity of the tungsten concentration (composition ratio) in the tungsten silicide film (W Conc). The black circles indicate the film thickness of the tungsten film (W thk). The white circles indicate the film thickness of the tungsten silicide film (WSi thk).

[0068] As shown by the black square mark indicating the silicon film thickness (Si NU), the smaller the oscillation width S1 of the magnet 171 corresponding to the target T1, the better the in-plane uniformity of the silicon film thickness.

[0069] Furthermore, as shown by the white square mark indicating the tungsten concentration (composition ratio) (W Conc) in the tungsten silicide film, the smaller the oscillation width S1 of the magnet 171 corresponding to the target T1, the better the in-plane uniformity of the composition.

[0070] Furthermore, the thickness of the tungsten film (W thk), indicated by the black circle, does not change with the oscillation width S1 of the magnet 171 corresponding to the target T1.

[0071] Furthermore, as indicated by the white circles representing the film thickness (WSi thk) of the tungsten silicide film, the degree of non-uniformity decreases as the oscillation width S1 of the magnet 171 corresponding to the target T1 decreases. In other words, the in-plane uniformity of the film thickness of the tungsten silicide film improves.

[0072] It should be noted that the present invention is not limited to the configurations shown in the above embodiments, including combinations with other elements. These aspects can be modified without departing from the spirit of the present invention and can be appropriately determined according to their application. [Explanation of Symbols]

[0073] 100 Film deposition equipment 110 Processing container 120 Stage mechanism 121 Mounting platform 125 Operating device 130 Target holding section 131 Holder 132 Insulating material 133 Power supply 140 Target covering part 150 Gas Supply Department 160 Gas discharge section 170 Magnet mechanism 171 Magnets 172 Operating part 180 Control Unit W board Ax1 Target central axis Ax2 Mounting platform central axis T1, T2 targets Ax11,Ax12 Center axis L1,L2 distance S1,S2 Oscillation width

Claims

1. A first holder that holds a first target formed of a first material, A second holder that holds a second target formed of a second material different from the first material, A mounting platform that holds the substrate and is rotatable around the central axis of the mounting platform as the axis of rotation, A first magnet that swings on the back side of the first holder, The second holder comprises a second magnet that swings on the back side, The emission angle distribution of sputtered particles emitted from the first target is greater than that of sputtered particles emitted from the second target. The distance from the central axis of the mounting table to the center of the sputtering surface of the first target is smaller than the distance from the central axis of the mounting table to the center of the sputtering surface of the second target. The oscillation range of the first magnet is smaller than the oscillation range of the second magnet. Film deposition equipment.

2. A first holder that holds a first target formed of a first material, A second holder that holds a second target formed of a second material different from the first material, A mounting platform that holds the substrate and is rotatable around the central axis of the mounting platform as the axis of rotation, A first magnet that swings on the back side of the first holder, The second holder comprises a second magnet that swings on the back side, The emission angle distribution of sputtered particles emitted from the first target is greater than that of sputtered particles emitted from the second target. The oscillation range of the first magnet is smaller than the oscillation range of the second magnet. Film deposition equipment.

3. A gas supply unit that supplies excitation gas, A first power supply that applies voltage to the first holder, The device comprises a second power supply that applies voltage to the first holder, A film deposition apparatus according to claim 1 or claim 2.

4. A first holder for holding a first target formed of a first material, a second holder for holding a second target formed of a second material different from the first material, a mounting table for holding a substrate and rotatable about the central axis of the mounting table as the axis of rotation, a first magnet disposed on the back side of the first holder, a second magnet disposed on the back side of the second holder, and a first operating unit for swinging the first magnet, A control method for a film deposition apparatus, comprising a second operating unit for oscillating the second magnet, The emission angle distribution of sputtered particles emitted from the first target is greater than that of sputtered particles emitted from the second target. The first and second operating units are controlled such that the oscillation range of the first magnet is smaller than the oscillation range of the second magnet. A control method for a film deposition apparatus.

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