Plasma processing equipment

Abstract

To control the exhaust pressure in a plasma processing container with good accuracy.SOLUTION: Provided is a plasma processing device comprising: a plasma processing container; a substrate support unit that is located in the plasma processing container; a movable member and a stationary member that are arranged in the periphery of the substrate support unit, the movable member having a plurality of rotor blades, which are rotatable, the stationary member having a plurality of stator blades, the plurality of rotor blades and the plurality of stator blades being alternately arranged along the height direction of the plasma processing container, with an exhaust space formed downward of the movable and stationary members; a first drive unit that is constituted so as to rotate the movable member; a pressure adjustment member that is disposed so as to be movable in the surrounding of the substrate support unit and above the movable and stationary members; and a second drive unit that is constituted so as to move the pressure adjustment member.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus.

Background Art

[0002] For example, Patent Document 1 proposes an apparatus in which a plurality of moving blades and a plurality of stationary blades are arranged in multiple stages around a substrate support portion disposed in a processing vessel. An exhaust space is formed below the plurality of moving blades and the plurality of stationary blades, and the moving blades are rotatable.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of accurately controlling the exhaust pressure in a plasma processing vessel.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus including: a plasma processing vessel; a substrate support portion disposed in the plasma processing vessel; a movable member and a stationary member disposed around the substrate support portion, the movable member having a plurality of moving blades, the plurality of moving blades being rotatable, the stationary member having a plurality of stationary blades, the plurality of moving blades and the plurality of stationary blades being alternately arranged along the height direction of the plasma processing vessel, an exhaust space being formed below the movable member and the stationary member; a first drive unit configured to rotate the movable member; a pressure adjustment member movably disposed around the substrate support portion and above the movable member and the stationary member; and a second drive unit configured to move the pressure adjustment member.

Effects of the Invention

[0006] One aspect of this approach is that the exhaust pressure inside the plasma processing vessel can be controlled with high precision. [Brief explanation of the drawing]

[0007] [Figure 1] A diagram illustrating an example configuration of a plasma processing apparatus according to one embodiment. [Figure 2] A plan view of a pressure adjusting member and a stationary member according to one embodiment. [Figure 3] A diagram showing the arrangement of multiple plate-like members and multiple stationary vanes in a reference example. [Figure 4] A diagram illustrating the arrangement and aperture ratio of multiple plate-like members and multiple stationary vanes. [Figure 5] A figure showing an example of the arrangement and operation of multiple plate-like members and multiple stator vanes according to one embodiment. [Figure 6] A figure showing an example of the arrangement and operation of multiple plate-like members and multiple stator vanes according to one embodiment. [Figure 7] A figure showing the arrangement and operation example 3 of multiple plate-shaped members and multiple stator vanes according to one embodiment. [Figure 8] Figure 4 shows an example of the arrangement and operation of multiple plate-like members and multiple stationary vanes according to one embodiment. [Figure 9] A figure showing an example of the arrangement of a plate-shaped member, a stationary blade, and a rotor blade according to one embodiment. [Figure 10] A figure showing an example of the arrangement of a plate-shaped member, a stationary blade, and a rotor blade according to one embodiment. [Figure 11] A figure showing an example of the arrangement of a plate-shaped member and a stator vane according to one embodiment. [Figure 12] A diagram showing one configuration of a second drive unit according to one embodiment. [Figure 13] A diagram showing another configuration of the second drive unit according to one embodiment. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] In this specification, deviations in directions such as parallel, right angles, orthogonal, horizontal, vertical, up and down, and left and right are permitted to the extent that they do not impair the effects of the embodiment. The shape of the corners is not limited to right angles and may be rounded in an arc shape. Parallel, right angles, orthogonal, horizontal, vertical, circular, and coincidence may include approximately parallel, approximately right angles, approximately orthogonal, approximately horizontal, approximately vertical, approximately circular, and approximately coincidence.

[0010] [Plasma treatment device] The following describes an example of the configuration of a plasma processing apparatus. Figure 1 is a diagram illustrating an example of the configuration of a plasma processing apparatus according to one embodiment.

[0011] The plasma processing apparatus 1 is a capacitively coupled plasma processing apparatus. The capacitively coupled plasma processing apparatus 1 includes a plasma processing vessel 10, a gas supply unit 16, an exhaust device 20, a power supply 30, and a control device 2. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing vessel 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing vessel 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing vessel 10. The plasma processing vessel 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing vessel 10, and the substrate support unit 11. The plasma processing vessel 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing container 10 is grounded. The shower head 13 and the substrate support part 11 are electrically insulated from the housing of the plasma processing container 10.

[0012] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 supports a substrate W. A wafer is an example of the substrate W. The substrate W is disposed on the central region of the main body portion 111, and the ring assembly 112 is disposed so as to surround the substrate W on the central region of the main body portion 111.

[0013] In one embodiment, the main body portion 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 所1111b disposed within the ceramic member 1111a.

[0014] The substrate support portion 11 further includes an insulating member 12 and a support portion 14. The insulating member 12 is ring-shaped with a thickness comparable to that of the main body portion 111, and the support portion 14 is cylindrical. The support portion 14 is formed of a metal such as aluminum, for example, and stands upright from the bottom of the plasma processing vessel 10 toward the inside, and supports the base 1110 via the insulating member 12. The outer diameter of the insulating member 12 and the outer diameter of the support portion 14 are equal to the diameter of the base 1110. The inner diameter of the support portion 14 is larger than the inner diameter of the insulating member 12. The internal space of the insulating member 12 and the support portion 14 below the base 1110 is an atmospheric space, and a power supply rod 26 is disposed coaxially with the base 1110. The power supply rod 26 and the base 1110 (substrate support portion 11) share the same axis with the central axis CL of the plasma processing vessel 10. The power supply rod 26 is electrically connected to the base 1110 at the center of the lower surface of the disk-shaped base 1110. A second RF generation unit 31b, which will be described later, is connected to the power supply rod 26 via an impedance matching circuit (not shown). Bias RF power is supplied from the second RF generation unit 31b to the base 1110 via the power supply rod 26.

[0015] Further, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 described later may be disposed within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0017] Further, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. In one embodiment, the flow path is formed within the base 1110, and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111. Also, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the electrostatic chuck 1111.

[0018] [[ID={11]] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 16 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 16 may include at least one gas source 16a and at least one flow controller 16b. In one embodiment, the gas supply unit 16 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 16a via a corresponding flow controller 16b. Each flow controller 16b may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 16 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing vessel 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing vessel 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing vessel 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0024] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] A movable member 40 and a stationary member 41 are arranged around the substrate support 11. The movable member 40 has a plurality of rotor blades 40a. The stationary member 41 has a plurality of stationary blades 41a. The plurality of rotor blades 40a and stationary blades 41a are arranged alternately along the height direction (vertical direction) of the plasma processing vessel 10. The movable member 40 and the stationary member 41 share a common axis with the central axis CL.

[0026] Multiple rotor blades 40a are fixed at intervals to a cylindrical member 40b that extends in the height direction (vertical direction). Stator blades 41a are positioned between vertically adjacent rotor blades 40a. The cylindrical member 40b is positioned on the outside of the support part 14, along its circumference. The inner diameter of the cylindrical member 40b is larger than the outer diameter of the support part 14. The first drive unit 51 is configured to rotate the movable member 40, thereby allowing the multiple rotor blades 40a to rotate about the central axis CL. In other words, the movable member 40 allows the multiple rotor blades 40a, which are arranged circumferentially at each height, to rotate as a whole as the cylindrical member 40b rotates around the central axis CL.

[0027] Multiple stationary vanes 41a are fixed at intervals to a cylindrical member 41b that extends in the height direction. Rotary vanes 40a are positioned between vertically adjacent stationary vanes 41a. The cylindrical member 41b is fixed to the side wall 10a of the plasma processing vessel 10. Therefore, the multiple stationary vanes 41a are fixed and do not rotate.

[0028] The pressure regulating member 21 is positioned around the substrate support portion 11 and above the movable member 40 and the stationary member 41. The pressure regulating member 21 shares an axis with the central axis CL. The second drive unit 52 is configured to move the pressure regulating member 21, thereby allowing the pressure regulating member 21 to move up and down. The pressure regulating member 21, the movable member 40, and the stationary member 41 are formed from, for example, an aluminum alloy. The aluminum alloy may be surface-treated by anodizing or ceramic spraying.

[0029] Figure 2 is a plan view of the pressure adjustment member 21 and the stationary member 41 according to one embodiment. In Figure 2, the insulating member 12 and the support part 14 of the substrate support part 11 are not shown. Also, the rotor blade 40a of the movable member 40 is not shown in Figure 2 because it is positioned below the pressure adjustment member 21 shown in Figure 2(a) and the stationary member 41 shown in Figure 2(b), which is positioned directly below it.

[0030] Referring to Figures 1 and 2(a), the pressure regulating member 21 has a plurality of plate-shaped members 21a arranged circumferentially around the substrate support portion 11. Each of the plurality of plate-shaped members 21a is the same shape and size. The inner surfaces of the plurality of plate-shaped members 21a are fixed to the outer surface of the ring-shaped member 21b and are evenly arranged circumferentially around the ring-shaped member 21b. The inner diameter of the ring-shaped member 21b is larger than the outer diameter of the insulating member 12 and the support portion 14.

[0031] As shown in Figure 2(b), the stationary member 41 has a plurality of stationary vanes 41a and a cylindrical member 41b arranged circumferentially around the substrate support portion 11. Each of the plurality of stationary vanes 41a is the same shape and size. The outer surfaces of the plurality of stationary vanes 41a are fixed to the inner surface of the cylindrical member 41b and are evenly distributed in the circumferential direction of the cylindrical member 41b.

[0032] Although not shown in Figure 2, the movable member 40 has a plurality of rotor blades 40a and a cylindrical member 40b arranged circumferentially around the substrate support portion 11. Each of the plurality of rotor blades 40a of the movable member 40 is the same shape and size. The inner surfaces of the plurality of rotor blades 40a are fixed to the outer surface of the cylindrical member 40b and are evenly arranged circumferentially around the cylindrical member 40b. The inner diameter of the cylindrical member 40b is larger than the outer diameter of the insulating member 12 and the support portion 14.

[0033] With the configuration of the pressure regulating member 21, the stationary member 41, and the movable member 40, the power supply rod 26, the pressure regulating member 21, the stationary member 41, and the movable member 40 are arranged coaxially.

[0034] As shown in Figure 2(c), the multiple plate-like members 21a and the multiple stationary vanes 41a are arranged alternately in the circumferential direction. In plan view, there are no gaps between adjacent plate-like members 21a and stationary vanes 41a. However, as will be described later, there may be gaps of a predetermined dimension or less between adjacent plate-like members 21a and stationary vanes 41a in plan view. Also, adjacent plate-like members 21a and stationary vanes 41a may partially overlap in plan view. Furthermore, the multiple plate-like members 21a and the multiple stationary vanes 41a may have the same shape and size, but are not limited to this.

[0035] Furthermore, the multiple rotor blades 40a and multiple stationary blades 41a are arranged alternately in the circumferential direction. The multiple rotor blades 40a and multiple stationary blades 41a may, but are not limited to, have the same shape and size.

[0036] In Figures 1 and 2, the stationary vane 41a is positioned directly below the pressure regulating member 21, and below it, the rotor vane 40a and the stationary vane 41a are arranged alternately, but this is not limited to this configuration. The rotor vane 40a may be positioned directly below the pressure regulating member 21, and below it, the stationary vane 41a and the rotor vane 40a may be arranged alternately. In this case, Figure 2(b) shows a movable member 40 of the same shape instead of the stationary member 41.

[0037] Returning to Figure 1, a baffle plate 22 is provided on the upper part of the pressure regulating member 21. The baffle plate 22 is ring-shaped and shares an axis with the central axis CL. Multiple through holes (e.g., holes) are formed in the baffle plate 22 to adjust the gas flow. However, it is not limited to this, and the pressure regulating member 21 may have at least one movable baffle plate 22 on its upper part. Alternatively, two baffle plates 22 may be arranged vertically. Note that the baffle plate 22 is not required.

[0038] An exhaust space 17 is formed below the movable member 40 and the stationary member 41. The exhaust device 20 may be connected to, for example, a gas outlet 10e provided at the bottom of the plasma processing vessel 10. The exhaust device 20 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof. There may be one or more gas outlets 10e.

[0039] The control device 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control device 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, some or all of the control device 2 may be included in the plasma processing apparatus 1. The control device 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control device 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0040] In the plasma processing apparatus 1, the substrate W is processed by plasma generated in the plasma processing space 10s. During substrate processing, the plasma processing apparatus 1 performs exhaust processing to control the pressure in the plasma processing space 10s. Exhaust processing is performed by the control device 2 controlling the exhaust device 20, the first drive unit 51, and the second drive unit 52. The exhaust processing performed by the plasma processing apparatus 1 will now be described.

[0041] The control device 2 obtains the actual pressure value from a pressure sensor (not shown) that measures the pressure in the plasma processing space 10s. The control device 2 controls the rotation and rotation speed of the multiple rotor blades 40a according to the pressure difference between the actual pressure value and a predetermined pressure set value (target value). For example, if the actual pressure value is higher than the set value, the control device 2 can send an instruction signal to the first drive unit 51 to increase the rotation speed of the multiple rotor blades 40a in order to increase the gas conductance. If the actual pressure value is lower than the set value, the control device 2 can send an instruction signal to the first drive unit 51 to decrease the rotation speed of the multiple rotor blades 40a in order to decrease the gas conductance.

[0042] Furthermore, as will be described later with reference to Figures 3 to 8, the control device 2 controls the vertical movement of the pressure regulating member 21 according to the pressure difference between the measured pressure and the set value. For example, if the measured pressure is higher than the set value, the control device 2 can send an instruction signal to the second drive unit 52 to raise the pressure regulating member 21 in order to increase the gas conductance. If the measured pressure is lower than the set value, the control device 2 can send an instruction signal to the second drive unit 52 to lower the pressure regulating member 21 in order to decrease the gas conductance.

[0043] The exhaust device 20 is positioned at an off-center location at the bottom of the plasma processing vessel 10. Therefore, the exhaust device 20 exhausts the plasma processing space 10s and the exhaust space 17 with a bias towards the gas outlet 10e side. If the movable member 40 and the stationary member 41 are not positioned, the pressure in the exhaust space 17 closer to the exhaust device 20 will be lower than that in the exhaust space 17 further away from the exhaust device 20. As a result, an uneven pressure distribution occurs in the exhaust space 17. This also causes an uneven pressure distribution in the plasma processing space 10s, making it easier for variations in substrate processing characteristics such as etching rate to occur in the circumferential direction.

[0044] In the plasma processing apparatus 1 with the above configuration, the ring-shaped pressure adjustment member 21, the movable member 40, and the stationary member 41 are arranged coaxially with the base 1110, thereby eliminating the bias in the gas conductance in the circumferential direction and maintaining the symmetry of the gas conductance in the circumferential direction. Furthermore, by arranging the power supply rod 26 coaxially with the base 1110, the bias in the impedance with respect to RF power in the circumferential direction is eliminated, thereby maintaining the symmetry of the RF power supply in the circumferential direction.

[0045] Furthermore, by rotating multiple rotor blades 40a and controlling their rotation speed, an excessive decrease in gas conductance is suppressed, and a flow of processing gas is created in the exhaust space 17. This makes it possible to equalize the pressure above the movable member 40 and the stationary member 41, suppressing variations in characteristics such as the circumferential etching rate in substrate processing, and enabling more uniform processing of the substrate W.

[0046] Furthermore, in this embodiment, the exhaust efficiency of the processing gas can be further improved by the configuration and operation of the pressure adjustment member 21, the movable member 40, and the stationary member 41, and the exhaust pressure inside the plasma processing container 10 can be controlled with greater precision. The configuration and operation examples of the pressure adjustment member 21 (multiple plate-shaped members 21a) and the stationary member 41 (multiple stationary vanes 41a) that improve exhaust efficiency will be described below with reference to Figures 3 to 8.

[0047] Figure 3 is a diagram showing the arrangement of multiple plate-like members 21a and multiple stationary vanes 41a according to a reference example. Figure 4 is a diagram for explaining the arrangement and opening ratio of multiple plate-like members 21a and multiple stationary vanes 41a. Figures 5 to 8 are diagrams showing the arrangement and operation examples 1 to 4 of multiple plate-like members 21a and multiple stationary vanes 41a according to one embodiment. Figures 3 to 8 are schematic diagrams of multiple plate-like members 21a and multiple stationary vanes 41a viewed from the side shown in AA of Figure 2(c). Figures 3 to 6 show two of each plate-like member 21a and stationary vane 41a viewed from the side shown in AA. Figures 7 and 8 show five plate-like members 21a and four stationary vanes 41a viewed from the side shown in AA.

[0048] In the reference example in Figure 3, the plate-shaped member 21a and the stationary vane 41a are arranged parallel to the mounting surface of the substrate W in the horizontal direction. Hereinafter, the space below the baffle plate 22 in which the pressure adjustment member 21, movable member 40, and stationary member 41 are arranged will be referred to as the exhaust path. The exhaust path is in communication with the exhaust space 17. When the plate-shaped member 21a is raised from the position of the plate-shaped member 21a shown in Figure 3(a) to the positions shown in Figures 3(b) and 3(c), the exhaust path of the processed gas between the plate-shaped member 21a and the stationary vane 41a expands. As shown in Figure 2(c), when the plate-shaped member 21a and the stationary vane 41a are arranged so that they can cover the entire exhaust space when viewed from above, the area of ​​the plate-shaped member 21a or the stationary vane 41a will be more than half of the area when the exhaust path is cut horizontally. In this case, the opening ratio of the exhaust paths (spaces) of the plate-shaped member 21a and the stationary vane 41a becomes, for example, 50% or less, and the range of pressure adjustment by the pressure adjustment member 21 is limited.

[0049] In contrast, as shown in Figure 4, the plate-shaped member 21a is tilted in the circumferential direction with respect to the horizontal direction, with angle θ being the angle of inclination in the circumferential direction. For example, the angle θ of the plate-shaped member 21a is gradually increased from 0° in Figure 4(a) to 45° in Figure 4(d), in the order of Figures 4(b), (c), and (d). The distance CR between the closest points of adjacent plate-shaped members 21a shown in Figures 4(a) to (d) is smallest when the angle θ is 0° (Figure 4(a)), and gradually increases in the order of the distance CR shown in Figures 4(b), (c), and (d). In other words, the greater the circumferential inclination of the plate-shaped member 21a, the wider the distance CR becomes, and the higher the opening ratio. The opening ratio is defined as the ratio of the sum of the distances CR to the circumference of the pressure adjustment member 21.

[0050] As described above, in this disclosure, the multiple plate-shaped members 21a are arranged non-parallel to the multiple stationary vanes 41a, as shown in Figures 4(b), (c), and (d). This expands the range of pressure adjustment by the pressure adjustment member 21. This increases the aperture ratio and allows for precise control of the gas conductance when the processing gas flows from the plasma processing space 10s through the exhaust path of the pressure adjustment member 21, the movable member 40, and the stationary member 41 to the exhaust space 17. As a result, the control accuracy of the exhaust pressure inside the plasma processing vessel 10 can be improved.

[0051] Furthermore, with respect to the stationary vanes 41a, the greater the circumferential inclination of the stationary vanes 41a, the wider the spacing between adjacent stationary vanes 41a, and the higher the opening ratio of the stationary member 41. Therefore, multiple stationary vanes 41a may be inclined circumferentially with respect to the horizontal direction. Also, the inclination of the plate-shaped member 21a and the inclination of the stationary vanes 41a may be arranged in opposite directions. Multiple plate-shaped members 21a are inclined at the same angle in the circumferential direction. Multiple stationary vanes 41a are inclined at the same angle in the circumferential direction. Note that multiple plate-shaped members 21a and multiple stationary vanes 41a are inclined only in the circumferential direction and not in the central direction (radial direction).

[0052] (Example of operation 1) In the operation example 1 shown in Figure 5, the plate-shaped member 21a moves vertically from the position in Figure 5(a) to the position in Figure 5(c). The stationary vane 41a is fixed. In this case, at the position in Figure 5(a), the exhaust path is closed (fully closed) by the plate-shaped member 21a and the stationary vane 41a, so no processed gas flows, as shown in Figure 5(d). At the position in Figure 5(b), the exhaust path is partially open, so the processed gas begins to flow into the exhaust space 17, as shown in Figure 5(e). At the position in Figure 5(c), the opening ratio is higher than at the position in Figure 5(b), and it is possible to reach 90% or more, allowing control to flow more processed gas into the exhaust space 17, as shown in Figure 5(f).

[0053] (Example of operation 2) In the operation example 2 shown in Figure 6, the plate-shaped member 21a moves diagonally up and down from the position in Figure 6(a) to the position in Figure 6(c). The stationary vane 41a is fixed. In this case, at the position in Figure 6(a), the exhaust path is closed (fully closed) by the plate-shaped member 21a and the stationary vane 41a, so no processed gas flows, as shown in Figure 6(d). At the position in Figure 6(b), the exhaust path is partially open, so the processed gas begins to flow into the exhaust space 17, as shown in Figure 6(e). At the position in Figure 6(c), the opening ratio is higher than at the position in Figure 6(b), and it is possible to reach 90% or more, allowing control to flow more processed gas into the exhaust space 17, as shown in Figure 6(f).

[0054] (Example of operation 3) In the operation example 3 shown in Figure 7, the plate-shaped member 21a moves vertically from the position shown in Figure 7(a) to the position shown in Figure 7(c). The stationary vane 41a is fixed. The difference from the examples shown in Figures 5 and 6 is that while the angle θ of the plate-shaped member 21a in Figures 5 and 6 is less than 90°, the angle θ of the plate-shaped member 21a in Figure 7 is 90°, and the plate-shaped member 21a is arranged parallel to the vertical. In this case, at the position shown in Figure 7(a), the exhaust path is closed (fully closed) by the plate-shaped member 21a and the stationary vane 41a, so no processed gas flows, as shown in Figure 7(d). At the position shown in Figure 7(b), the exhaust path is partially open, so the processed gas begins to flow into the exhaust space 17, as shown in Figure 7(e). At the position shown in Figure 7(c), the opening ratio is higher than at the position shown in Figure 7(b), and it is possible for it to be 90% or more, so it is possible to control the flow of more processed gas into the exhaust space 17, as shown in Figure 7(f).

[0055] (Example of operation 4) In the operation example 1 shown in Figure 8, the uppermost stationary vane 41a adjacent to the plate-shaped member 21a rises vertically from the position in Figure 8(a) to the position in Figure 8(c). The stationary vanes 41a other than the uppermost stationary vane 41a do not move. The plate-shaped member 21a is fixed. In this case, at the position in Figure 8(a), the exhaust path is closed (fully closed) by the plate-shaped member 21a and the uppermost stationary vane 41a, so no processing gas flows as shown in Figure 8(d). At the position in Figure 8(b), the exhaust path is partially open, so the processing gas begins to flow into the exhaust space 17 as shown in Figure 8(e). At the position in Figure 8(c), the opening ratio is higher than at the position in Figure 8(b), and it is possible to reach 90% or more, so it is possible to control the flow of more processing gas into the exhaust space 17 as shown in Figure 8(f).

[0056] An example of an arrangement in which multiple rotor blades 40a are added to the arrangement of multiple plate-like members 21a and multiple stationary blades 41a described above will be explained with reference to Figures 9 and 10. Figure 9 is a diagram showing arrangement example 1 of plate-like members 21a, stationary blades 41a and rotor blades 40a according to one embodiment. Figure 10 is a diagram showing arrangement example 2 of plate-like members, plate-like members 21a, stationary blades 41a and rotor blades 40a according to one embodiment. Figures 9 and 10 are schematic diagrams of the plate-like members 21a, stationary blades 41a and rotor blades 40a within the frame "B" shown in Figure 1, viewed from the side (for example, side AA in Figure 2(c)).

[0057] (Example 1 of arrangement of plate-shaped members, stationary vanes, and rotor blades) Figure 9 shows the plate-shaped member 21a and the uppermost stationary vane 41a shown in Figure 7, with the addition of multiple rotor blades 40a and multiple stationary vanes 41a that were omitted in Figure 7.

[0058] Below the plate-shaped member 21a and the uppermost stationary vane 41a, multiple rotor blades 40a and multiple stationary vanes 41a are arranged alternately in multiple stages. The multiple rotor blades 40a are rotated by the first drive unit 51 in the direction indicated by the dotted arrows. The rotation direction of the multiple rotor blades 40a arranged in multiple stages can be either clockwise or counterclockwise, as long as they are the same.

[0059] In Figures 9(a) and (b), the multiple plate-shaped members 21a move up and down by the second drive unit 52. In Figure 9(a), the multiple plate-shaped members 21a are positioned higher than the multiple stationary vanes 41a, and in Figure 9(b), the upper ends of the multiple plate-shaped members 21a have been lowered to the same height as the upper ends of the multiple stationary vanes 41a. When the multiple plate-shaped members 21a are in the positional relationship shown in Figure 9(a), the opening ratio of the exhaust path is highest. When the multiple plate-shaped members 21a are in the positional relationship shown in Figure 9(b), the opening ratio of the exhaust path is lowest. In this way, the opening ratio of the exhaust path is controlled by the vertical movement of the multiple plate-shaped members 21a while controlling the rotational speed of the multiple rotor vanes 40a. This makes it possible to set the opening ratio of the exhaust path to 90% or more, and widen the pressure adjustment range. Therefore, the pressure adjustment member 21 can be controlled to flow more processing gas into the exhaust space 17, and the exhaust pressure in the plasma processing container 10 can be controlled with high precision.

[0060] (Example 2 of arrangement of plate-shaped members, stationary vanes, and rotor blades) Figure 10 shows a configuration similar to Figure 9, but with multiple rotor blades 40a and multiple stator blades 41a added below the plate-shaped member 21a and stator blade 41a. The difference from the plate-shaped member 21a and stator blade 41a shown in Figure 9 is that a gap S is provided between the plate-shaped member 21a and the adjacent stator blade 41a. By providing a gap S, even when the plate-shaped member 21a and stator blade 41a expand or contract due to fluctuating factors such as temperature changes, it is possible to avoid friction or damage between the plate-shaped member 21a and the stator blade 41a due to the movement of the plate-shaped member 21a.

[0061] As an example of the dimensions of the plate-shaped member 21a shown in Figure 10, if the inner diameter of the plate-shaped member 21a is approximately 400 mm and the outer diameter is approximately 500 mm, the central diameter (diameter) φ passing through the center of the thickness of the plate-shaped member 21a will be approximately 450 mm, and the circumference passing through the center of the thickness of the plate-shaped member 21a will be approximately 1400 mm. For example, if the pressure regulating valve provided in the exhaust device 20 is controlled at an opening equivalent to that of the minimum opening of about 4%, a gap of about 56 mm, which is 4% of 1400 mm, can be provided.

[0062] For example, assuming that the plate-like members 21a and the uppermost stationary vane 41a are composed of 10 pieces each, there are 20 gaps (=10 pieces × 2) around the circumference, so each gap is 2.8 mm (=56 / 20). If we assume that the plate-like members 21a and the uppermost stationary vane 41a are composed of 30 pieces each, each gap is 0.9 mm. From these results, it can be concluded that the gap S between the plate-like members 21a and the stationary vane 41a should be smaller than 0.8 mm. A gap S smaller than 0.8 mm can be provided between the plate-like members 21a and the stationary vane 41a.

[0063] As described above, the plate-like member 21a may be positioned vertically (angle θ = 90°) or inclined in the circumferential direction (0° < angle θ < 90°). The thickness of the plate-like member 21a can also be set as appropriate.

[0064] On the other hand, the stationary vanes 41a and rotor vanes 40a are not arranged vertically, but are inclined in the circumferential direction. By inclining the stationary vanes 41a and rotor vanes 40a in the circumferential direction, the rotor vanes 40a can be rotated with a certain degree of opening ratio, thereby ensuring gas conductance in the exhaust path and forming an appropriate flow of the processed gas.

[0065] (Example 3 of arrangement of plate-shaped members, stationary vanes, and rotor vanes) Referring to Figure 11, an example of the arrangement of the plate-shaped member 21a and the stationary vane 41a according to one embodiment will be described. The plasma processing apparatus 1 has the plate-shaped member 21a and the stationary vane 41a as shown in the frame "C" in Figure 11(a), and does not have a multi-stage rotor blade 40a and stationary vane 41a below them. The configuration of the plasma processing apparatus 1 other than the configuration shown in the frame "C" is the same as the configuration of the plasma processing apparatus 1 in Figure 1.

[0066] Figures 11(b) and (c) are schematic diagrams of the plate-shaped member 21a and stationary vane 41a within the frame labeled "C" in Figure 11(a), viewed from the side (for example, side AA in Figure 2(c)). Below the plate-shaped member 21a and the uppermost stationary vane 41a, there are no multiple rotor blades 40a or multiple stationary vanes 41a. In other words, multiple stationary vanes 41a are arranged in only one stage below the pressure adjustment member 21, and no multiple rotor blades 40a are provided.

[0067] This also allows the second drive unit 52 to move the multiple plate-shaped members 21a, so that the opening ratio of the exhaust path is maximized when the multiple plate-shaped members 21a are in the uppermost position, and minimized when the multiple plate-shaped members 21a are in the lowermost position. By controlling the opening ratio of the exhaust path by moving the multiple plate-shaped members 21a in this way, it is possible to achieve an opening ratio of 90% or more. As a result, the pressure adjustment range of the pressure adjustment member 21 is wide, allowing control to flow more processing gas into the exhaust space 17, and enabling precise control of the exhaust pressure inside the plasma processing vessel 10.

[0068] [Second drive unit] Finally, the configuration and operation example of the second drive unit 52 according to one embodiment will be described with reference to Figures 12 and 13. Figure 12 is a diagram showing one configuration of the second drive unit 52 according to one embodiment. Figure 13 is a diagram showing another configuration of the second drive unit 52 according to one embodiment.

[0069] Figures 12(a) and (b) each show one configuration of the second drive unit 52. Figure 12(a) further shows the inside of the plasma processing container 10 viewed from below the baffle plate 22.

[0070] The second drive unit 52 in Figure 12(a) includes an actuator 52a and a support member 52b. The support member 52b is positioned between the substrate support 11 (support 14) and the movable member 40. As shown in the plan view of Figure 12(a), the support members 52b are rod-shaped, and multiple support members 52b are arranged at equal intervals in the circumferential direction and each is fixed to the lower surface of the pressure adjustment member 21. By moving multiple support members 52b up and down by one or more actuators 52a, multiple plate-shaped members 21a of the pressure adjustment member 21 move up and down.

[0071] The second drive unit 52 in Figure 12(b) includes an actuator 52a and a support member 52b. The support member 52b is positioned between the side wall 10a of the plasma processing vessel 10 and the stationary member 41. The support member 52b is rod-shaped, and multiple support members 52b are arranged at equal intervals in the circumferential direction and each is fixed to the lower surface of the pressure adjustment member 21. By moving multiple support members 52b up and down by one or more actuators 52a, multiple plate-shaped members 21a of the pressure adjustment member 21 move up and down. In Figures 12(a) and (b), the support member 52b may be cylindrical. In both Figures 12(a) and (b), the support member 52b penetrates the bottom of the plasma processing vessel 10 in order to maintain the airtightness of the vacuum space inside the plasma processing vessel 10. However, the support member 52b may also penetrate the top of the plasma processing vessel 10. The actuator 52a may also be positioned inside the plasma processing vessel 10.

[0072] Figures 13(a) and (b) show other configurations of the second drive unit 52, respectively. The second drive unit 52 in Figure 13(a) includes an actuator 52a, a gear 52c, and a threaded portion 52d. The actuator 52a is located in the atmospheric space within the support unit 14. The threaded portion 52d is located in the vacuum space (exhaust path). The gear 52c penetrates the support unit 14 horizontally, is connected to the actuator 52a at one end, and engages with the teeth formed on the threaded portion 52d at the other end. The threaded portion 52d is cylindrical and is positioned between the substrate support unit 11 (support unit 14) and the movable member 40. The upper end of the threaded portion 52d is fixed to the lower surface of the pressure adjustment member 21. When the gear 52c rotates around its axis by the actuator 52a (rotary motor) (vertical arrow in Figure 13(a)), the threaded portion 52d engages with the gear 52c and rotates along the support portion 14 around the central axis CL (see Figure 1) (horizontal arrow in Figure 13(a)). The threaded portion 52d and the support portion 14 have a ball bearing structure, and instead of the support portion 14 moving up and down due to the rotation of the threaded portion 52d, the threaded portion 52d rotates relative to the fixed support portion 14 and moves perpendicular to the plane of rotation, i.e., up and down. As a result, the multiple plate-shaped members 21a of the pressure adjustment member 21 rotate and move up and down.

[0073] The second drive unit 52 in Figure 13(b) also has an actuator 52a, a gear 52c, and a threaded portion 52d. The actuator 52a is provided in the atmospheric space near the side wall 10a of the plasma processing vessel 10. The threaded portion 52d is provided in the vacuum space (exhaust path). The gear 52c penetrates the side wall 10a horizontally, is connected to the actuator 52a at one end, and engages with the teeth formed on the threaded portion 52d at the other end. The threaded portion 52d is cylindrical and is positioned between the side wall 10a and the stationary member 41. The upper end of the threaded portion 52d is fixed to the lower surface of the pressure adjustment member 21. When the gear 52c rotates around its axis by the actuator 52a (rotating motor) (vertical arrow in Figure 13(b)), the threaded portion 52d engages with the gear 52c and rotates along the side wall 10a around the central axis CL (see Figure 1) (horizontal arrow in Figure 13(b)). The threaded portion 52d and the side wall 10a have a ball bearing structure. Instead of the side wall 10a moving up and down due to the rotation of the threaded portion 52d, the threaded portion 52d rotates relative to the fixed side wall 10a and moves vertically in the direction perpendicular to the plane of rotation, i.e., up and down. As a result, the multiple plate-shaped members 21a of the pressure adjustment member 21 rotate and move up and down.

[0074] According to the configuration of the second drive unit 52 shown in Figures 12(a) and (b), the second drive unit 52 can move the pressure adjustment member 21 up and down. For example, it can move up and down multiple plate-shaped members 21a shown in Figures 5, 7, and 8.

[0075] According to the configuration of the second drive unit 52 shown in Figures 13(a) and (b), the second drive unit 52 can move the pressure adjustment member 21 up and down while rotating it. For example, it can achieve the up and down movement of multiple plate-shaped members 21a shown in Figures 5, 7, and 8. Furthermore, by using a ball bearing structure between the screw portion 52d and the support portion 14, etc., the rotational motion of the pressure adjustment member 21 is converted into diagonal linear motion of the multiple plate-shaped members 21a, as shown in Figure 6, diagonal up and down movement of the multiple plate-shaped members 21a can be achieved.

[0076] As described above, the plasma processing apparatus 1 of this embodiment allows for precise control of the exhaust pressure inside the plasma processing container 10.

[0077] The plasma processing apparatus according to the embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0078] For example, the plasma processing apparatus according to the embodiment can be applied to any of the following: a single-wafer processing apparatus that processes substrates one by one, a batch processing apparatus that processes multiple substrates at once, and a semi-batch processing apparatus.

[0079] The plasma processing apparatus 1 of this disclosure may have the following configuration. (Note 1) Plasma processing vessel and A substrate support portion arranged within the plasma processing container, A stationary member is positioned around the substrate support portion, the stationary member has a plurality of stationary vanes, and an exhaust space is formed below the stationary member, A pressure adjustment member is movably positioned around the substrate support portion and on the upper part of the stationary member, The system includes a second drive unit configured to move the pressure adjusting member, Plasma processing equipment. (Note 2) The pressure adjusting member has a plurality of plate-shaped members arranged circumferentially around the substrate support portion. The plasma processing apparatus described in Appendix 1. (Note 3) The plurality of plate-shaped members are arranged in a non-parallel position with respect to the plurality of stator vanes. The plasma processing apparatus described in Appendix 2. (Note 4) The second drive unit is positioned between the substrate support and the stationary member. A plasma processing apparatus as described in any one of the items from Appendix 1 to Appendix 3. (Note 5) The second drive unit is positioned between the side wall of the plasma processing vessel and the stationary member. A plasma processing apparatus as described in any one of the items from Appendix 1 to Appendix 3. (Note 6) The substrate support portion comprises an electrostatic chuck and a base positioned below the electrostatic chuck. The power supply rod is electrically connected to the base. A plasma processing apparatus as described in any one of the items from Appendix 1 to Appendix 3. (Note 7) The power supply rod is arranged coaxially with the base, The plasma processing apparatus described in Appendix 6. (Note 8) The power supply rod is arranged coaxially with the stationary member, The plasma processing apparatus described in Appendix 6. (Note 9) The second drive unit is configured to move the pressure adjustment member up and down while rotating it. A plasma processing apparatus as described in any one of the items from Appendix 1 to Appendix 3. (Note 10) The pressure adjusting member further comprises at least one movable baffle plate on its upper part. A plasma processing apparatus as described in any one of the items from Appendix 1 to Appendix 3. [Explanation of symbols]

[0080] 1. Plasma processing equipment 2 Control device 10 Plasma processing vessel 11. Substrate support section 13 Shower head 20 Exhaust system 21 Pressure regulating member 21a Plate-shaped member 26 Power supply rod 31b Second RF generation unit 40 Movable member 40a moving blade 41 Stationary member 41a static wing 51 First drive unit 52 Second drive unit 111 Main body 112 Ring Assembly

Claims

1. Plasma processing vessel and A substrate support portion arranged within the plasma processing container, These are movable and stationary members arranged around the substrate support portion, The movable member has a plurality of rotor blades, the plurality of rotor blades are rotatable, and the stationary member has a plurality of stator blades. The plurality of rotor blades and the plurality of stator blades are arranged alternately along the height direction of the plasma processing vessel, An exhaust space is formed below the movable member and the stationary member, A first drive unit configured to rotate the aforementioned movable member, A pressure adjustment member is movably positioned around the substrate support portion and on the upper part of the movable member and the stationary member, It comprises a second drive unit configured to move the pressure adjusting member, The pressure adjustment member has a plurality of plate-shaped members arranged circumferentially around the substrate support portion, The plurality of plate-like members and the plurality of stationary vanes are arranged alternately in the circumferential direction. Plasma processing equipment.

2. Plasma processing vessel and A substrate support portion arranged within the plasma processing container, These are movable and stationary members arranged around the substrate support portion, The movable member has a plurality of rotor blades, the plurality of rotor blades are rotatable, and the stationary member has a plurality of stator blades. The plurality of rotor blades and the plurality of stator blades are arranged alternately along the height direction of the plasma processing vessel, An exhaust space is formed below the movable member and the stationary member, A first drive unit configured to rotate the aforementioned movable member, A pressure adjustment member is movably positioned around the substrate support portion and on the upper part of the movable member and the stationary member, It comprises a second drive unit configured to move the pressure adjusting member, The pressure adjustment member has a plurality of plate-shaped members arranged circumferentially around the substrate support portion, The aforementioned plurality of stator vanes are arranged in an inclination in the circumferential direction with respect to the horizontal direction, The plurality of plate-like members are arranged vertically, or are arranged at an inclination opposite to the inclination of the plurality of stationary vanes. The second drive unit is, A first position in which the uppermost stator vane among the plurality of stator vanes and the plurality of plate-shaped members overlap in the height direction, The pressure adjusting member is moved between a second position in which the plurality of plate-shaped members are positioned higher than the uppermost stator vane, Plasma processing equipment.

3. The plurality of plate-shaped members are arranged in a non-parallel manner with respect to the plurality of rotor blades or the plurality of stator blades. The plasma processing apparatus according to claim 2.

4. The second drive unit is positioned between the substrate support and the movable member, A plasma processing apparatus according to any one of claims 1 to 3.

5. The second drive unit is positioned between the side wall of the plasma processing vessel and the stationary member. A plasma processing apparatus according to any one of claims 1 to 3.

6. The substrate support portion comprises an electrostatic chuck and a base positioned below the electrostatic chuck. The power supply rod is electrically connected to the base. A plasma processing apparatus according to any one of claims 1 to 3.

7. The power supply rod is arranged coaxially with the base, The plasma processing apparatus according to claim 6.

8. The power supply rod is arranged coaxially with the movable member and the stationary member. The plasma processing apparatus according to claim 6.

9. The second drive unit is configured to move the pressure adjustment member up and down while rotating it. A plasma processing apparatus according to any one of claims 1 to 3.

10. The pressure adjusting member further comprises at least one movable baffle plate on its upper part. A plasma processing apparatus according to any one of claims 1 to 3.

11. Plasma processing vessel and A substrate support portion arranged within the plasma processing container, A stationary member arranged around the substrate support portion, The stationary member has a plurality of stator vanes, An exhaust space is formed below the stationary member, A pressure adjustment member is movably positioned around the substrate support portion and on the upper part of the stationary member, It comprises a second drive unit configured to move the pressure adjusting member, The pressure adjustment member has a plurality of plate-shaped members arranged circumferentially around the substrate support portion, The plurality of plate-like members and the plurality of stationary vanes are arranged alternately in the circumferential direction. Plasma processing equipment.

12. Plasma processing vessel and A substrate support portion arranged within the plasma processing container, A stationary member arranged around the substrate support portion, The stationary member has a plurality of stator vanes, An exhaust space is formed below the stationary member, A pressure adjustment member is movably positioned around the substrate support portion and on the upper part of the stationary member, It comprises a second drive unit configured to move the pressure adjusting member, The pressure adjustment member has a plurality of plate-shaped members arranged circumferentially around the substrate support portion, The aforementioned plurality of stator vanes are arranged in an inclination in the circumferential direction with respect to the horizontal direction, The plurality of plate-like members are arranged vertically, or are arranged at an inclination opposite to the inclination of the plurality of stationary vanes. The second drive unit is, A first position in which the uppermost stator vane among the plurality of stator vanes and the plurality of plate-shaped members overlap in the height direction, The pressure adjusting member is moved between a second position in which the plurality of plate-shaped members are positioned higher than the uppermost stator vane, Plasma processing equipment.

13. The plurality of plate-shaped members are arranged in a non-parallel position with respect to the plurality of stator vanes. The plasma processing apparatus according to claim 12.

14. The second drive unit is positioned between the substrate support and the stationary member. A plasma processing apparatus according to any one of claims 11 to 13.

15. The second drive unit is positioned between the side wall of the plasma processing vessel and the stationary member. A plasma processing apparatus according to any one of claims 11 to 13.

16. The substrate support portion comprises an electrostatic chuck and a base positioned below the electrostatic chuck. The power supply rod is electrically connected to the base. A plasma processing apparatus according to any one of claims 11 to 13.

17. The power supply rod is arranged coaxially with the base, The plasma processing apparatus according to claim 16.

18. The power supply rod is arranged coaxially with the stationary member, The plasma processing apparatus according to claim 16.

19. The second drive unit is configured to move the pressure adjustment member up and down while rotating it. A plasma processing apparatus according to any one of claims 11 to 13.

20. The pressure adjusting member further comprises at least one movable baffle plate on its upper part. A plasma processing apparatus according to any one of claims 11 to 13.

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