Improved plasma-resistant coating for electrostatic chucks

Abstract

1. A method of producing a device for use in a plasma etching chamber for manufacturing semiconductor components, comprising: providing a body forming a substrate of the device; applying a first coating to a surface of the body, the first coating comprising a metal and / or metal alloy thin film coating layer to form a metal-coated body; and applying a second coating onto the metal-coated body, the second coating comprising a ceramic coating layer, the second coating at least partially overlapping the first coating.

Description

Technical Field

[0001] The present invention relates to a method for producing a device used in a plasma etching chamber for manufacturing semiconductor components, and preferably to a device used in a plasma etching chamber for manufacturing semiconductor components, manufactured by such a method.

Background Art

[0002] In semiconductor technology, devices such as electrostatic chucks are commonly used. Electrostatic chucks (E-chucks) are often coated with a layer system including a ceramic phase coating (such as oxides, nitrides, borides, carbides, oxynitrides, etc.) commonly used in semiconductor device manufacturing. Such E-chucks are used in semiconductor etch chambers and need to be coated with a coating resistant to ion bombardment and etching by halogen gases to protect the E-chuck irradiated with etching plasma.

[0003] State of the Art The current state of the art for constructing a plasma-resistant E-chuck is, for example, a method of fabricating a minimum contact area (MCA) mesa structure on which a silicon wafer is placed during processing. The fabrication of this mesa MCA structure utilizes a positive hard mask (which converts its pattern to the "high" points of the MCA structure) and a subtractive ablation process (often a blasting operation) to remove a sufficient amount of material to leave the mesa at the desired height. This process has certain drawbacks with regard to particulate contamination and results in yield loss of semiconductor dies. Other drawbacks include the limited ability to modify and repair the E-chuck after some production use. State-of-the-art modifications include a grinding / polishing step to remove a certain amount of the base ceramic material and the re-fabrication of the aforementioned MCA pattern. Due to the importance of the dielectric properties of the base ceramic, thickness variations may have an adverse effect on the electrostatic performance of the E-chuck, limiting the number of times it can be modified due to performance degradation.

[0004] However, according to the new methodology, the MCA pattern is fabricated using an inverse mask in an additive process involving thin-film deposition, which avoids the aforementioned problems.

[0005] Such thin-film deposition coatings typically consist of oxides, oxynitrides, and oxyfluorides applied by various methods, including PVD and spray techniques. While these coatings have low etching rates, they thin out with use or, in some cases, mechanical wear and eventually need to be replaced. If damage occurs during handling (e.g., by scratching), the coating may also need to be replaced. This is motivated by the cost of typical components and, in some cases, the need to maintain dielectric properties when the coating becomes too thin (i.e., for the function of electrostatic chucks, E-chucks). Therefore, there is a need for etching-resistant coatings that are easily repairable.

[0006] Mechanical removal of coatings by methods such as grit blasting or lapping is sometimes impractical or has the disadvantage of damaging the constituent material each time it is applied. This is especially true for patterned surfaces such as the mesa structure on E-chucks described above. Therefore, selective removal of coatings in a conformal manner by chemical or electrochemical methods would be very advantageous. However, these methods are unfortunately not very efficient for etching-resistant coatings that are designed to be inert to most chemicals. This challenge is even greater when etching-resistant coatings are applied to substrates with similar chemical properties (i.e., Al2O3 / AlON coatings on Al2O3 / AlON surfaces of E-chucks).

[0007] U.S. Patent No. 10497598B2 discloses an electrostatic chuck comprising a ceramic structural element, at least one electrode disposed on the ceramic structural element, and a surface dielectric layer disposed on the at least one electrode. The surface dielectric layer includes an insulating layer of amorphous alumina less than 5 microns thick directly disposed on the at least one electrode, and a stack of dielectric layers disposed on an insulator, comprising at least one dielectric layer containing aluminum oxynitride and at least one dielectric layer containing at least one silicon oxide and silicon oxynitride.

[0008] U.S. Patent No. 9,761,417,B2 discloses a two-layer coating consisting of an AlON plasma-resistant layer, approximately 1 to 10 microns thick, directly superimposed on a substrate for protection, and an outermost plasma-resistant layer of yttria coating, also approximately 1 to 10 microns thick, superimposed adjacent to the AlON layer. The protective plasma-resistant layer is deposited directly onto the substrate, which is a component in the semiconductor manufacturing system, and can be quartz, alumina, aluminum, steel, metal, or alloy. Both the AlON layer and the yttria layer are deposited on the substrate to protect it from plasma irradiation during semiconductor manufacturing by pulsed reactive physical deposition.

[0009] U.S. Patent No. 10020218B2 relates to a ceramic body made of AlN or Al2O3 including an embedded electrode, a first ceramic coating deposited directly on the surface of the ceramic body, and a second ceramic coating on the first ceramic coating, wherein the second ceramic coating is made of Al2O3, AlN, Y2O3, Y2Al5O 12 The present invention discloses an electrostatic chuck comprising a second ceramic coating having a thickness of approximately 5 to 30 μm and containing a material from the group consisting of (YAG) and AlON, and a plurality of elliptical mesas on the second ceramic coating having a diameter of approximately 0.5 to 2.0 mm and a thickness of approximately 2 to 20 microns.

[0010] U.S. Patent No. 8,206,829,B2 discloses a plasma-resistant coating and a method for forming such a coating on a plasma chamber component such as an electrostatic chuck, wherein the plasma-resistant coating comprises a crystalline ceramic formed to be non-native to the substrate and to contain at least one oxide, nitride, boride, carbide or halide of yttrium, iridium (Ir), rhodium (Rh), or a lanthanide, such as erbium (Er), and having a porosity of less than 1%. The plasma-resistant coating is deposited on at least a portion of the substrate via an intervening layer placed between the substrate and the plasma-resistant coating, the intervening layer containing an oxide, nitride or carbide of an element other than the main component in the plasma-resistant coating.

[0011] U.S. Patent No. 9,633,884,B2 discloses a plasma-resistant coating for an electrostatic chuck assembly for a plasma processing chamber, comprising a mixture of Y2O3 / Al2O3 or YF3 / Al2O3 deposited by plasma-enhanced physical vapor deposition. The authors also disclose an undercoat layer provided between the E-chuck for protection and the plasma-resistant coating, comprising at least one of Y2O3 and Al2O3, and formed using standard plasma spraying.

[0012] U.S. Patent No. 7,732,056,B2 discloses a method for providing a plasma-resistant coating on the surface of an aluminum component, comprising anodizing the surface of the aluminum component to form an anodized aluminum oxide layer and a sputtered layer containing aluminum oxide directly deposited on the anodized aluminum oxide layer.

[0013] U.S. Patent Application Publication No. 20190067069A1 discloses an electrostatic chuck comprising a ceramic-based electrode and a surface layer, wherein the surface layer comprises a plurality of protrusions, the protrusions comprising a composition having a columnar or granular morphology. The material forming the protrusions can be entirely made of physically deposited aluminum oxynitride (AlON) or a coating of aluminum oxynitride on an underlying ceramic such as alumina. Other examples of materials that can be used for the protrusions include yttria (Y2O3), yttrium aluminum garnet (YAG), alumina (Al2O3), or aluminum oxynitride.

[0014] All of the above patents disclose solutions based on the direct deposition of functional ceramic thin films onto the surface of a base ceramic. Therefore, the reliability and performance of the E-chuck are essentially related to the elasticity of the ceramic layer, which adheres well to the base ceramic component. However, it is well known that ceramic coatings are easily cracked during mechanical induction due to their brittle mechanical behavior. Poor and unstable coating integrity can lead to premature coating failure and even catastrophic delamination of the film, potentially hindering the lifespan and performance of the E-chuck.

[0015] U.S. Patent No. 7077918 describes a method for stripping a coating from a ceramic or metal workpiece. To facilitate stripping, at least a first chromium and aluminum-containing coating is applied directly to the workpiece. A functional layer made of AlCr nitride, known for its large pore structure, is deposited on this coating. Stripping is then performed using a permanganate solution. This solution does not attack the AlCr nitride, but the AlCr layer is attacked as expected through its large pores. However, by using a ceramic layer with finer pores and better protection compared to a plasma etching process, damage to the metal layer located beneath the ceramic layer is not expected. [Overview of the project] [Problems that the invention aims to solve]

[0016] Objective of the present invention The object of the present invention is to alleviate or overcome one or more difficulties related to the prior art. In particular, the object of the present invention is to provide a method for producing a device and a device that have high surface resistance in a plasma etching process, can be easily and quickly resurfaced as needed, and provide great flexibility in the selection of coating materials. [Means for solving the problem]

[0017] Description of the present invention To overcome these problems, a method has been invented for producing devices used in plasma etching chambers for manufacturing semiconductor components.

[0018] Therefore, in a first aspect of the present invention, a method for producing a device used in a plasma etching chamber for manufacturing semiconductor components, The steps include providing a body for forming the substrate of the device, A step of applying a first coating to the surface of a body, wherein the first coating includes a thin metal and / or metal alloy coating layer to form a metal coating body, A method comprising the steps of applying a second coating onto a metal coated body, wherein the second coating includes a ceramic coating layer and the second coating at least partially overlaps with the first coating.

[0019] This allows the device to be designed, preferably, as an electrostatic chuck. Furthermore, the first and / or second coatings may be applied at least partially to the surface of the device body. The phrase that the second coating at least partially overlaps the first coating may be understood, preferably, as the second coating being applied at least partially on the first coating, including direct and indirect connections between the first and second coatings.

[0020] In another example of the first embodiment, the method may include manufacturing a body, which may include uncoating the body by, preferably, polishing and cleaning the surface of the body, in particular, plasma and / or ion bombardment may be used to clean and / or activate the surface. Alternatively or cumulatively, the manufacturing may include treating the body with an alkaline or oxidizing substance to dissolve any existing coating from the surface of the body.

[0021] In another example of the first embodiment, an intervening coating comprising metal and ceramic components may be applied between a first coating and a second coating, wherein the intervening coating may be applied by using a controlled feed of a reactive gas that forms the ceramic components while continuously decreasing the addition of the metal components to generate a gradient of metal components within the intervening coating, preferably starting with a larger amount of metal compound at the interface with the first coating and ending with a smaller amount of metal compound at the interface with the second coating, in particular, the feed of the reactive gas that forms the ceramic components and / or the addition of the metal compound may be varied at least partially stepwise and / or at least partially continuously. In other words, the atomic composition may change with depth from at least substantially metallic near the interface with the first layer to at least substantially ceramic near the interface with the second coating, and such change may be at least partially stepwise and / or at least partially continuous, thereby forming a gradient.

[0022] Therefore, in order to solve the problems of the present invention, a special coating architecture is proposed that uses a dedicated base or interlayer. The properties of this interlayer are selected to enable efficient decoating by wet chemical methods. Examples of wet chemical methods may include alkaline solutions or oxidizing solutions. The solution dissolves or oxidizes the interlayer, resulting in the "lift-off," or removal, of the etching-resistant layer.

[0023] The intermediate layer also has a function of promoting the adhesion of the etching resistant layer to the surface of the component. Therefore, the present specification also discloses a method for enhancing the adhesion strength of a vacuum deposited ceramic coating to different substrate materials for an E - chuck. These materials can include aluminum, stainless steel, and various types of ceramics such as Al2O3, quartz, Al2O3 / AlON, and ALN. According to the present invention, this can be achieved by depositing a thin pure metal layer, followed by a gradual transition from the pure metal phase to a ceramic phase coating. The top functional layer with improved adhesion can provide a more robust surface for aggressive applications and can then provide a homogeneous film with a weaker bond that does not have such an intermediate layer structure.

[0024] The object of the present invention is to thereby solve the problems of insufficient adhesion and easy decoating during the modification of a homogeneous ceramic film on a substrate. To improve the adhesion strength and facilitate the decoating of a functional etching resistant coating, the use of a metal thin film layer or layer system before the deposition of the homogeneous ceramic layer is proposed.

[0025] According to a preferred embodiment, a gradual transition from a metal - based coating to a ceramic - based coating can be achieved. Depending on the deposition method, the process stability and reproducibility are also improved by this gradual transition from a metal - based coating to a ceramic - based coating. Instead of a sharp change in process conditions, a slow transition is used so that the coating can be made more structurally robust and reproducible.

[0026] Surprisingly, it has been found that even for a very dense ceramic layer such as used in an E - chuck, the peeling method is facilitated by the intervening metal layer. One possible explanation is that the ceramic layer may contain pores that are small enough so that plasma cannot enter, but large enough for the peeling solution to enter the underlying metal - based coating and attack it.

[0027] Based on this description, according to a preferred embodiment of the present invention, in order to further improve the contact of the stripping agent with the metal coating on the device body, the body forming the device used in the etching chamber may be microstructured and / or nanostructured. This may be done by structuring the uncoated body. The upper layer of the thin film coating then comes into contact with the lower area of ​​the structure only to a certain extent or in a certain amount.

[0028] On the other hand, if the solvent can easily enter the grooves of the main body, it will effectively dissolve the metal coating, resulting in a lift-off effect and removal of the ceramic layer.

[0029] Based on this, in a further example of the first embodiment, the method may include the step of microstructuring a device, wherein the structure introduced by the microstructuring is preferably made in the form of a lattice structure that can be introduced particularly into the body of the device.

[0030] As explained above (and not limited to the examples given), using this adhesive layer structure makes it easier to remove the coating for component-level repairs. Using chemical stripping methods, ceramic coatings can be removed fairly easily by chemically attacking the metal-based layer. This works easily by undercutting the ceramic film, resulting in delamination from the substrate surface. In the case of homogeneous ceramic coatings without a metal layer, there is no such layer for the chemicals to attack. Therefore, stripping these types of coatings is much more difficult.

[0031] One specific area where this improved peeling technique may be applied is removing deposited ceramic coatings from hard shadow masking. For example, if this masking is used to deposit features on an electrostatic chuck, the masking needs to be cleaned regularly. This routine peeling of the mask is necessary to prevent potential flaking from the accumulation of thick coatings, which can lead to particles in the coating. If the masking is a ceramic material such as Al2O3, the use of a metal layer makes the mask peeling more efficient and repeatable.

[0032] To ensure accurate and targeted layer accumulation, a vacuum coating method may be used to apply the first coating and / or the second coating and / or interlayer coating, preferably using CVD or PVD technology, particularly magnetron sputtering technology.

[0033] With respect to layer accumulation, a pure metal layer and / or pure metal alloy may be applied to the surface of the main body as a first coating, and the metal layer and / or metal alloy may contain at least one of the following metals: Al, V, Ti, Hf, Y, Er, Sc, Ce, La.

[0034] Furthermore, with respect to the accumulation of a layer as a second coating, a pure ceramic layer may be applied to the surface of the body, and the ceramic layer may preferably contain at least one of the following: oxides, nitrides, oxynitrides, silicates, fluorides, carbides, and oxyfluorides, and in particular, a reactive gas for forming the ceramic may be supplied slowly and ramped.

[0035] A second aspect of the present invention discloses a device for use in a plasma etching chamber for manufacturing semiconductor components, preferably produced by the method of any one of the preceding claims, the device comprising a body forming a substrate of the device, a first coating applied to the surface of the body, the first coating comprising a thin metal and / or metal alloy coating layer, and a second coating on the metal coating body, the second coating comprising a ceramic coating layer and at least partially overlapping the first coating. The body forming the substrate of the device may include aluminum, stainless steel, and / or various types of ceramics such as Al2O3, quartz, Al2O3 / AlON, or ALN.

[0036] In another example of the second embodiment, the device may further include an intervening coating located between the first coating and the second coating, the intervening coating preferably including metallic and ceramic components that can be non-uniformly distributed within the layers.

[0037] With respect to the intervening coating, the metal portion within the intervening coating may decrease continuously from the interface between the intervening coating and the first coating to the interface between the intervening coating and the second coating, while the ceramic portion within the layer may increase continuously from the interface between the intervening coating and the first coating to the interface between the intervening coating and the second coating, and the ratio of metal components to ceramic components may preferably change at least partially stepwise and / or at least continuously.

[0038] To ensure high surface resistance in a plasma etching process combined with the ability to easily and rapidly renew the surface, the second coating and, given, the intervening coating may contain pores, which may preferably have different pore diameters at the pore inlet and pore outlet, with the diameter of the pore at the pore inlet adjacent to the second coating being particularly smaller than the diameter at the pore outlet adjacent to the first coating.

[0039] In particular, a coating containing pores in a device may be designed so that the plasma in a plasma etching process cannot penetrate the second coating, but the coating may be designed so that the pores are large enough to allow a stripping agent to penetrate the coating and dissolve the first coating.

[0040] In a further example of the second embodiment, the device may include micro and / or nanostructured components, which may preferably be in the form of grid structures introduced particularly into the body of the device.

[0041] With respect to micro and / or nanostructured components, the grid structure may include protrusions and openings positioned between two adjacent protrusions, the openings may preferably include constrictions positioned between two adjacent protrusions adjacent to a second coating, and the diameter of the openings may increase continuously, in particular, from the constrictions to the bottom of the grid within the openings.

[0042] As a result, the top ceramic layer preferably does not extend to the bottom of the grid within the opening, and the bottom of the grid can only be coated with a metal coating.

[0043] With respect to layer accumulation, the first coating may preferably be a pure metal and / or metal alloy thin film containing at least one of the following metals: Al, V, Ti, Hf, Y, Er, Sc, Ce, La.

[0044] With respect to layer accumulation, the second coating may preferably be a pure ceramic layer comprising at least one of the following: oxides, nitrides, oxynitrides, silicates, fluorides, carbides, and oxyfluorides.

[0045] As a result, micro and / or nanostructured components can be designed in the form of a periodic grid structure, where the distance between two adjacent protrusions may preferably be at least 200 nm wide, and particularly at least 400 nm wide. According to a particularly preferred embodiment, the distance between two adjacent protrusions may be greater than 500 nm wide.

[0046] In another example of the second embodiment, the device may be coated unevenly along its surface, and the thickness of the first and / or second coating and / or interlayer coating may be thinner at some points on the surface than at other points.

[0047] Preferably, in one embodiment of a device having a grid structure, the coating (first and / or second coating and / or intervening coating) may be distributed non-uniformly along its surface, and the coating (first and / or second coating and / or intervening coating) is preferably thicker on the upper side of the grid of protrusions than the coating in the bottom area within the opening.

[0048] According to a preferred embodiment, the device may be an electrostatic chuck or a hard shadow masking device.

[0049] While this invention can be used with electrostatic chucks, the concept of this invention is intended to have broader applicability both within the semiconductor processing industry and in other industries.

[0050] It was found that the best bonding results are obtained by using a transition layer to a metal adhesion-promoting layer followed by a homogeneous ceramic layer. This layer structure also improves the ease of chemically removing the coating as needed.

[0051] Next, the present invention will be described in more detail with reference to the drawings, based on the examples. Description of the drawing [Brief explanation of the drawing]

[0052] [Figure 1] This is a cross-sectional view of the solution at the current level of technological attainment. (1) Substrate (2) Ceramic base single layer [Figure 2] A cross-sectional view of one embodiment of the present invention is shown, showing the layers created to generate a film stack. (1) Substrate (2) Pure metal layer (3) Transition layer (from pure metal to ceramic) (4) Ceramic base layer [Figure 3] This shows a scratch test of a single-layer ALON coating directly applied to a substrate. The substrate material is Al2O3, and the coating thickness is approximately 21 μm. As revealed in the test, Lc2 breakdown is detected under a 34N load. [Figure 4] This exhibits a scratch test of transitions to a coating and ALON functional layer having a pure aluminum adhesive layer according to one embodiment of the present invention. The substrate material is Al2O3, and the coating thickness is approximately 23 μm. As revealed in the test, Lc2 fracture is detected under a 50 N load. [Figure 5] An example of a coated periodic rectangular lattice structure introduced into the device body is shown. [Figure 6] This shows a sample having an AlON film directly coated onto an Al2O3 substrate before peeling. [Figure 7] Figure 6 shows a sample with the AlON film after peeling. [Figure 8] This shows a sample having an AlON film coated on a metal interlayer that was directly coated onto the substrate before peeling. [Figure 9] Figure 8 shows a sample having an AlON film coated on a metal interlayer after peeling. [Modes for carrying out the invention]

[0053] Detailed description of the solution of the present invention To produce an improved adhesive layer structure for ceramic coatings, a vacuum deposition source is used to deposit a pure metal layer onto a clean substrate surface of an E-chuck. The coating may include, but is not limited to, oxides, nitrides, borides, carbides, oxyfluorides, and classes of materials such as Al, V, Ti, Zr, Hf, Y, Er, Sc, Ce, La, and AlON. The substrate surface can be cleaned or activated by plasma cleaning or ion bombardment before metal deposition. After a pure metal layer of a certain thickness is deposited, a reactive gas (e.g., O2 and / or N2 and / or fluorine-containing gas) is slowly introduced and ramped for several minutes until a fully stoichiometric ceramic coating is achieved. At this point, deposition is allowed to continue for a while until the functional layer is deposited.

[0054] A more detailed example is shown below. Examples In this example, the ALON (aluminum oxynitride) coating was deposited using magnetron-reactive sputtering. The metal-based adhesive layer and transitions were generated before the functional ALON was deposited. The following steps were performed to produce this film: 1. Polishing of the E-chuck (4μm Ra): The aluminum oxide surface was solvent-cleaned, and the E-chuck was loaded into a two-axis rotating planetary system within a stainless steel vapor deposition system.

[0055] 2. The chamber was evacuated to a low 10E-05mbar range. 3. Argon plasma etching of the substrate was performed for 7 minutes using DC filament discharge and pulsed DC substrate bias.

[0056] 4. Next, set the operating pressure to 4.5E -3 The pressure was adjusted to mbar, the argon flow rate was adjusted to 180 sccm, and the turbopump speed was also adjusted.

[0057] 5. Next, pulsed DC power was supplied to the balanced 8-inch diameter circular planar aluminum target (99% purity), starting at a 50% power setting and then ramping up to 6kW over 1 minute.

[0058] 6. To form a pure aluminum adhesive layer, sputtering at 6kW was continued for a continuous period of 10 minutes.

[0059] 7. Next, we confirmed that the operating cathode voltage of the sputtering target was approximately 565V in pure metal mode.

[0060] 8. Next, a transition from pure aluminum to aluminum oxynitride was generated using closed-loop control of reactive gases O2 and N2, and control of the reaction process by a discharge voltage regulating device. Software control of this device allows the user to program the ramping function while utilizing master / slave control of the reactive gases. In this case, the N2 channel is the master and O2 is the slave. The O to N ratio was set to 3.5:6.5. The reactive gases were then slowly ramped at this set ratio for 20 minutes so that the cathode voltage steadily decreased from 565V (pure metal film) to the final setpoint of 400V (complete oxynitride film). At this point, the O / N ratio remained fixed, and slight adjustments to the gas flow were achieved by the regulating device to maintain the 400V operating setpoint on the sputtering cathode during the duration of deposition.

[0061] 9. Next, maintain constant conditions until the top functional layer of the coating reaches the desired thickness.

[0062] The resulting coating consisted of a pure aluminum layer approximately 8 microns thick, a transition gradient layer approximately 8 microns thick, and a functional top layer approximately 21 microns thick. The adhesive strength between the two coatings was compared using a conical diamond-tip scratch tester with a radius of 200 μm. Scratches of 3 mm in length were performed with a 2N load increment until Lc2 adhesive failure was achieved (Figures 3 and 4). Compared to a single-layer ALON coating deposited under the same conditions without an adhesive layer, the use of this intermediate layer structure substantially improved the adhesive value.

[0063] The pure metal layer improves the bonding of the upper layer to the substrate material. The transition from the metal to the ceramic layer provides a good bond between the metal layer and the functional layer. The transition layer acts as an intervening layer with hardness and Young's modulus between the softer pure metal layer and the harder functional layer. This structure provides a more robust coating that can withstand any forces or stresses that may occur on the functional layer.

[0064] Figure 5 shows an example of a coated periodic rectangular lattice structure introduced into the device body 101. As can be seen from Figure 5, the structured body 101 has a periodic rectangular lattice structure (lattice period 500 nm, packing density 0.5). The body is coated with a metal coating 103. Due to the influence of auf shadowing, the coating thickness on the top of the lattice is thicker compared to the metal coating in the groove area. As shown in Figure 5, the openings of the lattice are narrowed due to the coating. This has the effect that the ceramic overcoat 105 (shown as the × area in Figure 5) does not reach the bottom of the groove. In effect, in Figure 5 h m In the depth region represented as , only the metal coating exists. The opening to the groove is narrowed to "d". This prevents the etching plasma from entering the groove, and the ceramic coating 105 completely protects the device. As an additional effect, the structuring improves the adhesion of the coating to the structured body 101.

[0065] Chemical removal of the coating is also easier compared to homogeneous ceramic films included in prior art. This is mainly due to the ability of the release chemical to attack the metal adhesive layer through the coating, thus causing the coating to detach.

[0066] To demonstrate the positive effect of delamination when applying a metal interlayer, two Al2O3 substrates were coated with circular AlON ceramic films. On one substrate, a thick AlON ceramic film was deposited directly onto the ceramic Al2O3 base material, while on the other sample, a metal layer was deposited first, followed by a transition gradient layer, and finally, as described above, a thick ceramic AlON film was deposited.

[0067] After coating deposition, the ceramic film was attempted to be removed at room temperature for 90 minutes using a 10% NaOH alkaline solution. Figure 6 shows a sample with the AlON film directly applied to the substrate before removal, and Figure 7 shows the sample after removal. As can be seen from Figure 7, the circular ceramic film is attacked but not completely removed. Figure 8 shows a sample with the AlON film coated on a metal interlayer, and Figure 9 shows the sample after removal. As can be seen, the circular ceramic film is completely removed. Very interestingly, no damage (pitting corrosion, cracking) was observed on the surface of the newly uncoated Al2O3 substrate after removal.

[0068] Other solutions can be used for stripping. For example, a KOH solution is also expected to work well.

Claims

1. A method for producing a device used in a plasma etching chamber for manufacturing semiconductor components, The method further includes the step of providing a body that forms the substrate of the device, wherein the body is made of aluminum, stainless steel or ceramic material, and the method further includes the step of providing a body that forms the substrate of the device, wherein the body is made of aluminum, stainless steel or ceramic material, A step of applying a first coating of a pure metal layer and / or a pure metal alloy to the surface of the body in order to form a metal coating, wherein the pure metal layer and / or the pure metal alloy comprises at least one of the following metals: Al, V, Ti, Hf, Y, Er, Sc, Ce, La, A method comprising the step of applying a second coating onto a metal coating body, wherein the second coating includes an aluminum oxynitride (AlON) or a ceramic coating layer made of aluminum oxynitride (AlON), and the second coating directly or indirectly overlaps with the first coating.

2. The method according to claim 1, wherein the method includes the step of manufacturing the body, and the manufacturing includes uncoating the body by polishing and cleaning the surface of the body.

3. The method according to claim 1 or 2, wherein the manufacturing process includes treating the body with an alkaline or oxidizing substance to dissolve an existing coating from the surface of the body.

4. The method according to any one of claims 1 to 3, wherein an intervening coating comprising metal and ceramic components is applied between a first coating and a second coating, and the intervening coating is applied by using a controlled feed of a reactive gas forming the ceramic components while continuously decreasing the addition of the metal components to generate a gradient of the metal components within the intervening coating, where the intervening coating starts with a larger amount of metal compound at the interface with the first coating and ends with a smaller amount of metal compound at the interface with the second coating, and the feed of the reactive gas forming the ceramic components and / or the addition of the metal compound are varied at least partially stepwise and / or at least partially continuously.

5. The method according to any one of claims 1 to 4, comprising the step of microstructuring the device, wherein the structure introduced by microstructuring is made in the form of a lattice structure introduced on the surface of the body of the device.

6. The method according to any one of claims 1 to 5, wherein a vacuum coating method is used to apply the first coating and / or the second coating, and CVD or PVD technology is used.

7. A device used in a plasma etching chamber for manufacturing semiconductor components, A body forming the substrate of the aforementioned device, wherein the body is made of aluminum, stainless steel, or ceramic material, A first coating applied to the surface of the main body to form a metallic coating, wherein the first coating is a thin film of a pure metal and / or a pure metal alloy, and comprises at least one of the following metals: Al, V, Ti, Hf, Y, Er, Sc, Ce, La. A device comprising: a second coating on the metal coating body, wherein the second coating includes a ceramic coating layer comprising aluminum oxynitride (AlON) or made of aluminum oxynitride (AlON), and the second coating directly or indirectly overlaps with the first coating.

8. The device according to claim 7, wherein the device further comprises an intervening coating between the first coating and the second coating, and the intervening coating comprises metal and ceramic components that are non-uniformly distributed within the layer of the intervening coating.

9. The device according to claim 8, wherein the metal components in the intervening coating decrease continuously from the interface between the intervening coating and the first coating to the interface between the intervening coating and the second coating, and at the same time, the ceramic components in the layer increase continuously from the interface between the intervening coating and the first coating to the interface between the intervening coating and the second coating, so that the ratio of the metal components to the ceramic components to each other changes at least partially stepwise and / or at least continuously.

10. The device according to claim 8 or 9, wherein the second coating and the intervening coating include pores, the pores having different diameters at the pore inlet and the pore outlet, and the diameter of the pore at the pore inlet adjacent to the second coating is smaller than the diameter at the pore outlet adjacent to the first coating.

11. The device according to any one of claims 7 to 10, wherein the device comprises micro and / or nanostructured components, the micro and / or nanostructured components being made in the form of a grid structure introduced on the surface of the body of the device.

12. The device according to claim 11, wherein the grid structure includes a projection and an opening located between two adjacent projections, the opening includes a constriction located between two adjacent projections adjacent to the second coating, and the diameter of the opening increases continuously from the constriction to the bottom of the grid structure within the opening.

13. The device according to claim 12, wherein the uppermost ceramic layer is partially applied to the surface of the body, the uppermost ceramic layer does not extend to the bottom of the grid structure within the opening, and the bottom of the grid structure is coated only with a metal coating.

14. The device according to any one of claims 11 to 13, wherein the micro and / or nanostructured components are designed on the surface of the body in the form of a periodic grid structure, and the distance between two adjacent protrusions is at least 200 nm in width.

15. The device according to any one of claims 8 to 10, wherein the device is unevenly coated along its surface, and the thickness of the first and / or second coating and / or the intervening coating is thinner at some points on the surface than at other points.

16. The device according to any one of claims 7 to 15, wherein the device is an electrostatic chuck or a hard shadow masking device.

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