Plasma processing apparatus and method for assembling the same

Abstract

This plasma treatment device vacuum-treats, using plasma, an object to be treated disposed in a treatment chamber, and comprises: a vacuum vessel that is formed by bending a wall forming the treatment chamber so as to form a convex shape protruding from the atmosphere side toward the treatment chamber side, and has a protruding portion in which an opening penetrating in a thickness direction is formed; an antenna that is provided outside the treatment chamber and within a recess formed by an atmosphere-side wall surface of the protruding portion, is connected to a high-frequency power source, and generates a high-frequency magnetic field; a dielectric plate that is disposed within the recess so as to close the opening of the protruding portion from the atmosphere side, and transmits the high-frequency magnetic field generated from the antenna into the treatment chamber; and a support member that is attached to the recess and elastically deformable, and can be selectively disposed at a support position where the support member comes into contact with the dielectric plate, and biases and supports the dielectric plate toward the wall surface of the recess by elastic force or a retreat position where the support member is retreated from the support position.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus for processing a workpiece using plasma and a method for assembling the same.

Background Art

[0002] There has conventionally been proposed a plasma processing apparatus that generates an inductively coupled plasma (abbreviation: ICP) by flowing a high-frequency current through an antenna and using the induced electric field generated thereby, and that performs processing on a workpiece such as a substrate using this inductively coupled plasma. As such a plasma processing apparatus, Patent Document 1 discloses an apparatus that generates plasma in a processing chamber by disposing an antenna outside a vacuum vessel and transmitting the high-frequency magnetic field generated from the antenna into the vacuum vessel through a dielectric plate provided so as to close an opening formed in the wall of the vacuum vessel.

[0003] Further, Patent Document 2 describes a plasma processing apparatus in which an antenna is disposed in a recess on the atmosphere side formed by bending the wall of the vacuum vessel so as to project toward the processing chamber side. In this plasma processing apparatus, by disposing an antenna in the recess and providing a dielectric plate in the recess, it is possible to increase the plasma density in a direction orthogonal to the antenna and broaden the distribution of the plasma density generated in the processing chamber.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the configuration described above, where a dielectric plate is placed in a recess, it can be difficult to provide space for attaching a frame to fix and support the dielectric plate in the vacuum vessel. Therefore, during the assembly of the plasma processing device, the dielectric plate may not be properly supported, and there is a possibility that the dielectric plate may shift or fall off.

[0006] This invention has been made in view of the above problems, and its main objective is to increase the plasma density generated in the processing chamber, broaden its distribution, and prevent displacement and detachment of dielectric plates during assembly, in a plasma processing apparatus in which an antenna is placed outside the processing chamber. [Means for solving the problem]

[0007] In other words, the plasma processing apparatus according to the present invention is a device that vacuum processes an object to be processed placed in a processing chamber using plasma, and is characterized by comprising: a vacuum vessel having a protruding portion formed by bending the wall forming the processing chamber so as to be convex in shape from the atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber in a recess formed by the atmospheric side wall surface of the protruding portion, connected to a high-frequency power supply to generate a high-frequency magnetic field; a dielectric plate provided so as to close the opening formed in the protruding portion from the atmospheric side, and allowing the high-frequency magnetic field generated from the antenna to pass into the processing chamber; and an elastically deformable support member attached to the recess, which can be selectively positioned in a support position that fits between the antenna and the dielectric plate and biases and supports the dielectric plate toward the wall surface of the protruding portion by elastic force, and a retracted position that is retracted from between the antenna and the dielectric plate.

[0008] Furthermore, the present invention relates to a plasma processing apparatus assembly method for a plasma processing apparatus that vacuum processes an object to be processed using plasma, the method comprising: a vacuum vessel having a protruding portion formed by bending the wall forming the processing chamber so as to be convex from the atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber in a recess formed by the atmospheric side wall surface of the protruding portion, connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate provided so as to close the opening formed in the protruding portion from the atmospheric side, allowing the high-frequency magnetic field generated from the antenna to pass into the processing chamber, the method comprising: inserting an elastically deformable support member between the antenna and the dielectric plate, biasing and supporting the dielectric plate toward the wall surface of the protruding portion by elastic force, and after evacuating the processing chamber, moving the support member to retract it from between the antenna and the dielectric plate. [Effects of the Invention]

[0009] According to the present invention as described above, in a plasma processing apparatus in which an antenna is placed outside the processing chamber, it is possible to increase the plasma density generated in the processing chamber, broaden its distribution, and prevent displacement and detachment of dielectric plates during assembly. [Brief explanation of the drawing]

[0010] [Figure 1] A schematic diagram showing the configuration of the plasma processing apparatus of this embodiment. [Figure 2] A schematic diagram showing the configuration around the antenna and magnetic field transmission window of the plasma processing apparatus of the same embodiment. [Figure 3] A schematic diagram showing the cross-section along line A-A' in Figure 2. [Figure 4] A schematic diagram showing the arrangement of support members in (a) the support position and (b) the retracted position of the plasma processing apparatus of the same embodiment. [Figure 5] A schematic perspective view showing the configuration of the support member in the same embodiment. [Figure 6] A schematic diagram showing the configuration of a plasma processing apparatus in another embodiment. [Figure 7] Schematic diagram showing the configuration around the antenna and the magnetic field transmission window of the plasma processing apparatus according to another embodiment. [Figure 8] Diagram schematically showing a cross-section taken along line B-B' of FIG. 7. [Figure 9] Diagram schematically showing the arrangement of the support member of the plasma processing apparatus according to another embodiment at (a) the support position and (b) the retracted position. [Figure 10] Diagram schematically showing the arrangement of the support member of the plasma processing apparatus according to another embodiment at (a) the support position and (b) the retracted position. [Figure 11] Diagram schematically showing the arrangement of the support member of the plasma processing apparatus according to another embodiment at (a) the support position and (b) the retracted position. [Figure 12] Perspective view schematically showing the configuration of the support member according to another embodiment. [Figure 13] Perspective view schematically showing the configuration of the support member according to another embodiment. [Figure 14] Perspective view schematically showing the configuration of the support member according to another embodiment. [Figure 15] Perspective view schematically showing the configuration of the support member according to another embodiment.

Embodiments for Carrying Out the Invention

[0011] Hereinafter, a plasma processing apparatus 100 according to an embodiment of the present invention will be described with reference to the drawings.

[0012] <Device Configuration> The plasma processing apparatus 100 according to the present embodiment performs vacuum processing on a workpiece W such as a substrate using an inductively coupled plasma P. Here, the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, or a flexible substrate for a flexible display. The processing performed on the substrate is, for example, film formation by plasma CVD, etching, ashing, sputtering, etc.

[0013] Note that when the plasma processing apparatus 100 of the present embodiment forms a film by plasma CVD method, it is also called a plasma CVD apparatus; when performing etching, it is called a plasma etching apparatus; when performing ashing, it is called a plasma ashing apparatus; and when performing sputtering, it is called a plasma sputtering apparatus.

[0014] Specifically, as shown in FIGS. 1 to 3, the plasma processing apparatus 100 includes a vacuum vessel 2 that forms an inner processing chamber 1 evacuated and into which a gas G is introduced, an antenna 3 provided outside the processing chamber 1, and a high-frequency power supply 4 that applies a high frequency to the antenna 3. In the vacuum vessel 2, a magnetic field transmission window 5 that transmits the high-frequency magnetic field generated from the antenna 3 into the processing chamber 1 is formed at a position facing the antenna 3. When a high frequency is applied from the high-frequency power supply 4 to the antenna 3, the high-frequency magnetic field generated from the antenna 3 passes through the magnetic field transmission window 5 and is formed in the processing chamber 1, thereby generating an induced electric field in the space in the processing chamber 1, and an inductively coupled plasma P is generated thereby.

[0015] The vacuum vessel 2 includes a vessel body 21 that forms the processing chamber 1 and a window member 22 that forms the magnetic field transmission window 5.

[0016] The vessel body 21 is, for example, a metal vessel, and the processing chamber 1 is formed inside by its wall (inner wall). An opening 2a penetrating in the thickness direction is formed in the wall of the vessel body 21. The window member 22 is detachably attached to the vessel body 21 so as to close the opening 2a. Note that the vessel body 21 is electrically grounded, and the space between the window member 22 and the vessel body 21 is vacuum-sealed by a gasket such as an O-ring or an adhesive.

[0017] The window member 22 comprises a metal plate (slit plate) 221 with a plurality of slits 221s formed thereon and a dielectric plate 222. The metal plate 221 and the dielectric plate 222 are provided in this order from the processing chamber 1 side toward the atmosphere side (antenna side), and both are provided so as to extend along the longitudinal direction of the antenna 3. In the plasma processing apparatus 100 of this embodiment, a magnetic field transmission window 5 is formed by the slits 221s of the metal plate 221 and the dielectric plate 222 that closes them, allowing a high-frequency magnetic field to pass into the processing chamber 1.

[0018] The metal plate 221 has a plurality of slits 221s formed through it in the direction of its thickness, and is provided to close the opening 2a of the container body 21. Each of these plurality of slits 221s is rectangular in shape and extends in a direction intersecting the longitudinal direction of the antenna 3, and is formed in a line along the longitudinal direction of the antenna 3.

[0019] The metal sheet 221 is manufactured by rolling (for example, cold rolling or hot rolling) a metallic material such as one metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W, or Co (e.g., stainless steel alloy, aluminum alloy, etc.).

[0020] The dielectric plate 222 is positioned on the atmospheric surface of the metal plate 221 via a gasket such as an O-ring, so as to block the opening 2a of the container body 21 and the slit 221s of the metal plate 221 from the outside side (i.e., the atmospheric side) of the processing chamber 1.

[0021] The materials constituting the dielectric plate 222 may be known materials such as ceramics like alumina, silicon carbide, and silicon nitride; inorganic materials such as quartz glass and alkali-free glass; and resin materials such as fluororesins (e.g., Teflon).

[0022] The vacuum vessel 2 is configured so that the processing chamber 1 is evacuated by a vacuum evacuation device 6. The vacuum vessel 2 is also configured so that gas G is introduced into the processing chamber 1 via, for example, a flow regulator (not shown) and multiple gas inlets 212 provided in the vessel body 21. The gas G should be appropriate for the processing to be performed on the substrate W. For example, when forming a film on a substrate by plasma CVD, the gas G is the raw material gas or a gas obtained by diluting it with a diluent gas (e.g., H2). To give a more specific example, if the raw material gas is SiH4, a Si film can be formed on the substrate; if it is SiH4 + NH3, a SiN film can be formed; if it is SiH4 + O2, an SiO2 film can be formed; and if it is SiF4 + N2, a SiN:F film (fluorinated silicon nitride film) can be formed.

[0023] Furthermore, a substrate holder 7 for holding the substrate W is provided inside the vacuum chamber 2. As in this example, a bias voltage may be applied to the substrate holder 7 from a bias power supply 8. The bias voltage is, for example, a negative DC voltage or a negative bias voltage, but is not limited to these. By using such a bias voltage, it is possible to control, for example, the energy of positive ions in the plasma P when they are incident on the substrate W, thereby controlling the degree of crystallinity of the film formed on the surface of the substrate W. A heater 71 for heating the substrate W may also be provided inside the substrate holder 7.

[0024] Multiple antennas 3 are provided, and each antenna 3 is positioned outside the processing chamber 1 so as to face the magnetic field-transmitting window 5. Each antenna 3 is positioned substantially parallel to the surface of the substrate W provided in the processing chamber 1.

[0025] Each antenna 3 has the same configuration, and externally it appears as a straight line with a length of several tens of centimeters or more, and its cross-sectional shape is circular. One end of the antenna 3 in the longitudinal direction is connected to a high-frequency power supply 4 via a matching circuit 41, and the other end is directly grounded. Alternatively, an impedance adjustment circuit such as a variable capacitor or variable reactor may be provided at one or the other end of the antenna 3 to adjust the impedance of each antenna 3. By adjusting the impedance of each antenna 3 in this way, the density distribution of plasma P in the longitudinal direction of the antenna 3 can be made uniform, and the film thickness in the longitudinal direction of the antenna 3 can be made uniform.

[0026] The material of each antenna 3 may be, for example, copper, aluminum, alloys thereof, stainless steel, etc., but is not limited to these. Alternatively, the antenna 3 may be made hollow and cooled by circulating a coolant such as cooling water inside.

[0027] The high-frequency power supply 4 can supply a high-frequency current IR to the antenna 3 via the matching circuit 41. The high-frequency value is, for example, a common 13.56 MHz, but is not limited to this and may be changed as appropriate.

[0028] In this embodiment of the plasma processing apparatus 100, the vacuum vessel 2 has a protruding portion 2p formed by bending its wall so that it forms a convex shape from the atmospheric side toward the processing chamber 1 side. This protruding portion 2p is formed at a position facing each antenna 3, and in this case, multiple protruding portions 2p are formed corresponding to multiple antennas 3.

[0029] In this embodiment, the protruding portion 2p is formed by bending the wall of the container body 21 that forms the processing chamber 1. When viewed from the longitudinal direction of the antenna 3, the protruding portion 2p is formed to have a roughly U-shape that is convex from the atmospheric side toward the processing chamber 1 side. The antenna 3 is then positioned in the recess 2c formed by the atmospheric-side wall surface of the protruding portion 2p.

[0030] Each protruding portion 2p comprises a pair of side wall portions 2p1 facing each other with the antenna 3 in between, and a bottom wall portion 2p2 connecting the lower ends of each side wall portion 2p1 (in this case, the ends on the processing chamber 1 side). The pair of side wall portions 2p1 are formed to be parallel to each other and parallel to the direction from the antenna 3 toward the substrate W. The bottom wall portion 2p2 is formed to be parallel to the surface of the substrate W. The aforementioned opening 2a is formed to penetrate through each of the pair of side wall portions 2p1 in the thickness direction. In each protruding portion 2p, the opening 2a is formed at a position facing the antenna 3, and at a position symmetrical with respect to the antenna 3.

[0031] Within the recess 2c, multiple (in this case, two) window members 22 are provided to close each opening 2a. Within the recess 2c, the multiple window members 22 are arranged to face each other (or back-to-back) with the antenna 3 in between, and more specifically, the multiple dielectric plates 222 are arranged to face each other with the antenna 3 in between. Within the recess 2c, the metal plate 221 and dielectric plate 222 constituting the window members are arranged vertically along the side wall portion 2p1 (i.e., in a direction intersecting the substrate W).

[0032] Furthermore, the plasma processing apparatus 100 of this embodiment includes a support member 9 to prevent displacement and detachment of the dielectric plate 222 during assembly. This support member 9 is elastically deformable and detachably attached to the recess 2c. As shown in Figure 4, by deforming, it can be selectively positioned between a support position Q, where it contacts the dielectric plate 222 and supports it by elastic force, biasing it toward the atmospheric side wall surface of the side wall portion 2p1 of the protruding portion 2p (i.e., the side wall surface of the recess 2c), and a retracted position R, where it is retracted from the support position Q. The user can switch the position of the support member 9 between the support position Q and the retracted position R by, for example, grasping the support member 9 with their fingers and deforming it to insert and remove it in the vertical direction (the depth direction of the recess 2c). The support member 9 is made of an insulating resin material.

[0033] Specifically, as shown in Figures 2, 4, and 5, the support member 9 is a roughly plate-shaped member formed by bending it to form a convex shape from the processing chamber 1 side toward the atmosphere side, and is fitted into the recess 2c so as to cover the antenna 3 and the dielectric plate 222. The support member 9 is a long member having a roughly constant cross-sectional shape, and is attached to the recess 2c such that its long axis coincides with the longitudinal direction of the antenna 3. The cross-sectional shape of the support member 9 in this embodiment is an inverted U-shape that is convex from the processing chamber side toward the atmosphere side. More specifically, when viewed from the longitudinal direction of the antenna 3, the support member 9 has a curved top portion 91 that bulges toward the atmosphere side, and a pair of legs 92 that extend toward the processing chamber 1 side from both ends of the top portion 91.

[0034] As shown in Figure 4, at the support position Q, the support member 9 is inserted between a pair of opposing window members 22 (specifically, between a pair of dielectric plates 222) in a deformed state that narrows the distance between the pair of legs 92. In this state, the pair of legs 92 make surface contact with the corresponding surfaces of the dielectric plates 222, and the dielectric plates 222 are supported by biasing them toward the side wall surface of the recess 2c due to elastic force.

[0035] Furthermore, in the retracted position R, which is pulled upward from the support position Q, the support member 9 has a pair of legs 92 that are in surface contact with the opposing side walls of the recess 2c without contacting the dielectric plate 222, and the support member 9 is attached to the recess 2c by this pair of legs 92 bracing against the side walls.

[0036] The support member 9 also functions as a flow channel forming member that forms a cooling channel through which cooling fluid flows to cool the antenna 3 and window member 22. Specifically, in the retracted position R, the support member 9, with its inner wall and the outer wall of the protruding portion 2p (i.e., the side and bottom walls of the recess 2c), forms a housing space S that surrounds and accommodates the entire circumference of the antenna 3 and window member 22. This housing space S functions as a cooling channel through which cooling fluid flows during plasma processing. The wall of the top portion 91 of the support member 9 is provided with a vent 9a that connects the housing space S to the external space, and is configured to allow cooling fluid to be introduced and discharged from the vent 9a. Here, the top portion 91 of the support member 9 is provided with multiple (two in this case) vents 9a along the longitudinal direction of the antenna 3, and the cooling fluid introduced from one vent 9a flows along the longitudinal direction of the antenna 3, cools the antenna 3 and window member 22, and is then discharged from the other vent 9a. The plasma processing apparatus 100 may also be equipped with a cooling fluid supply mechanism (not shown), and the cooling fluid may be supplied from the vent port 9a by this cooling fluid supply mechanism.

[0037] <Effects of this embodiment> According to the plasma processing apparatus 100 of this embodiment, which is configured in this way, the antenna is positioned in a recess 2c formed by the atmospheric-side wall of the protruding portion 2p. For example, by providing an opening in the side wall of the recess 2c, the distance between the antenna and the processing chamber can be reduced compared to when the antenna is positioned facing the flat wall of the vacuum vessel. This increases the plasma density in the direction perpendicular to the antenna and broadens the distribution of plasma density generated in the processing chamber. Furthermore, since the apparatus is equipped with an elastically deformable support member 9 that can be selectively positioned at a support position Q, which is attached to the recess 2c and biases and supports the dielectric plate toward the wall surface of the recess 2c, and at a retracted position R, which is retracted from that position, when assembling the plasma processing apparatus which requires support for the dielectric plate, the support member 9 can be positioned at support position Q to prevent displacement or detachment of the dielectric plate. On the other hand, after vacuum evacuation of the processing chamber where support for the dielectric plate is not required, the support member 9 can be positioned at retracted position R to bring the antenna closer to the dielectric plate and increase the plasma density in the processing chamber.

[0038] <Other modified embodiments> However, the present invention is not limited to the embodiments described above.

[0039] For example, in the plasma processing apparatus 100 of the above embodiment, the protruding portion 2p was formed by bending the wall of the container body 21, but it is not limited to this. In the plasma processing apparatus 100 of other embodiments, the processing chamber 1 is formed by the walls of both the container body 21 and the window member 22, and the protruding portion 2p may be formed by bending the metal plate 221 of the window member 22. In this case, as shown in Figures 6 to 8, the plasma processing apparatus 100 has an opening 2a that penetrates in the thickness direction in the upper wall 21a of the container body 21, and the window member 22, which is composed of a metal plate 221 and a dielectric plate 222, is detachably attached to the container body 21 so as to close this opening 2a. Then, at positions facing each antenna 3, a plurality of protruding portions 2p may be formed by bending the metal plate 221 to form a convex shape from the atmospheric side toward the processing chamber 1 side. Furthermore, multiple slits 221s may be formed in the pair of side wall portions 2p1 that are opposite each other on either side of the antenna 3, and dielectric plates 222 may be arranged to close these slits 221s. Support members 9 may be attached to recesses 2c formed by bending the metal plate 221.

[0040] Furthermore, in the above embodiment, the top portion 91 of the support member 9 had a curved shape that bulged out toward the atmosphere, but this is not limited to this. In other embodiments, as shown in Figure 9, the top portion 91 of the support member 9 may have a flat shape.

[0041] In the above embodiment, the pair of side wall portions 2p1 of the protruding portion 2p were formed to be parallel to each other and parallel to the direction from the antenna 3 toward the substrate W, but the embodiment is not limited to this. In other embodiments, as shown in Figure 10, the pair of side wall portions 2p1 have inclined portions 2p11 that are inclined to move toward each other as they move from the antenna 3 side toward the processing chamber 1 side, and an opening 2a may be formed in this inclined portion 2p11.

[0042] Furthermore, in the above embodiment, slits 221s were formed in each of the pair of side wall portions 2p1, but this is not limited to this. In other embodiments, as shown in Figure 11, the protruding portion 2p is formed by bending the metal plate 221, and the slits 221s may be formed continuously across the pair of side wall portions 2p1 and the bottom wall portion 2p2. In this case, the dielectric plate 222 may be formed to have a substantially U-shape that is convex from the atmospheric side toward the processing chamber 1 side when viewed from the longitudinal direction of the antenna 3.

[0043] In yet another embodiment, the wall at the top 91 of the support member 9 may have only one vent 9a. In this case, the vent 9a may be located near the center of the top 91 along the longitudinal direction of the antenna 3, as shown in Figure 12, or near the end of the top 91 along the longitudinal direction of the antenna 3, as shown in Figure 13. When the vent 9a is located near the center of the top 91, the cooling fluid introduced from the vent 9a can flow along the longitudinal direction of the antenna 3 toward both ends and be discharged from the openings at both ends of the support member 9. When the vent 9a is located near the end of the top 91, the cooling fluid introduced from the vent 9a can flow along the longitudinal direction of the antenna 3 toward the other end and be discharged from the opening at the other end of the support member 9.

[0044] In other embodiments, as shown in Figures 14 and 15, multiple (for example, two) support members 9 may be arranged in a row along the longitudinal direction of the antenna 3 in each recess 2c. In this case, each support member 9 may have only one or multiple ventilation openings 9a at its top 91. Furthermore, the multiple support members 9 may be spaced apart along the longitudinal direction of the antenna 3, or they may be placed without any spacing between them.

[0045] Furthermore, in the above embodiment, the magnetic field-transmitting window 5 was formed by a slit 221s in the metal plate 221 and a dielectric plate 222 that blocks it, but this is not limited to this. In other embodiments, the window member 22 may not have a metal plate 221, and the magnetic field-transmitting window 5 may be formed by the dielectric plate 222 alone.

[0046] Although the plasma processing apparatus 100 in the above embodiment was equipped with multiple antennas 3, it is not limited to this and may be equipped with only one antenna 3.

[0047] Furthermore, the disclosures of this specification may include embodiments 1 to 6 as illustrated below.

[0048] (Aspect 1) A plasma processing apparatus for vacuum processing an object to be processed placed in a processing chamber using plasma, comprising: a vacuum vessel having a protruding portion with an opening formed through the thickness direction, formed by bending the wall forming the processing chamber so as to be convex from the atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber in a recess formed by the atmospheric side wall surface of the protruding portion, connected to a high-frequency power supply to generate a high-frequency magnetic field; a dielectric plate disposed in the recess so as to close the opening of the protruding portion from the atmospheric side, and allowing the high-frequency magnetic field generated from the antenna to pass into the processing chamber; and a support member attached to the recess, which is elastically deformable and can be selectively positioned between a support position that contacts the dielectric plate and biases and supports the dielectric plate toward the wall surface of the recess by elastic force, and a retracted position that does not contact the dielectric plate.

[0049] With this configuration, the antenna is positioned within a recess formed by the atmospheric-facing wall of the protruding portion. By, for example, providing an opening in the side wall of the recess, the distance between the antenna and the processing chamber can be reduced compared to when the antenna is positioned facing the flat wall of the vacuum vessel. This increases the plasma density in the direction perpendicular to the antenna and broadens the distribution of plasma density generated in the processing chamber. Furthermore, since the device is equipped with an elastically deformable support member that can be selectively positioned between a support position, which is attached to the recess and biases and supports the dielectric plate toward the wall of the recess, and a retracted position, which is moved away from the support position, when assembling a plasma processing device that requires support for the dielectric plate, the support member can be placed in the support position to prevent the dielectric plate from shifting or falling off. On the other hand, after the vacuum evacuation of the processing chamber, when support for the dielectric plate is not required, the support member can be placed in the retracted position to bring the antenna closer to the dielectric plate and further increase the plasma density in the processing chamber.

[0050] (Aspect 2) The plasma processing apparatus according to aspect 1, wherein, when viewed from the longitudinal direction of the antenna, a plurality of dielectric plates are arranged to face each other with the antenna in between, and the support member is inserted between a pair of opposing dielectric plates in a deformed state at the support position. With this configuration, a single support member can simultaneously support multiple dielectric plates that are facing each other.

[0051] (Aspect 3) The plasma processing apparatus according to aspect 1 or 2, wherein the support member is a substantially plate-shaped member formed by bending it to form a convex shape from the processing chamber side toward the atmosphere side, and is attached to the recess so as to cover the antenna and dielectric plate. With this configuration, the walls of the support member and the recessed walls form a space surrounding the antenna and dielectric plate, and by supplying a cooling fluid to this space, for example, the antenna and dielectric plate can be efficiently cooled.

[0052] (Aspect 4) The plasma processing apparatus according to aspect 3, wherein a housing space is formed by the wall of the support member in the retracted position and the wall of the protruding portion, surrounding and housing the antenna and the dielectric plate, and the wall of the support member is provided with a ventilation opening that connects the housing space to the external space. With this configuration, cooling fluid can be efficiently supplied to the containment space by introducing it through the vents.

[0053] (Aspect 5) The plasma processing apparatus according to aspect 3 or 4, wherein the wall of the support member is provided with a plurality of ventilation openings along the longitudinal direction of the antenna. With this configuration, for example, by supplying cooling fluid from one vent and exhausting it from the other vent, the cooling fluid can be circulated along the longitudinal direction of the antenna, allowing for efficient cooling of the antenna and dielectric plate.

[0054] (Aspect 6) A plasma processing apparatus according to any one of aspects 3 to 5, wherein a plurality of support members are provided along the longitudinal direction of the antenna. With this configuration, even if the plasma processing unit is large and has a very long antenna, it can be cooled efficiently.

[0055] (Aspect 7) A plasma processing apparatus for vacuum processing an object to be processed placed in a processing chamber using plasma, comprising: a vacuum vessel having a protruding portion with an opening that penetrates in the thickness direction, formed by bending the wall forming the processing chamber so as to be convex from the atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber in a recess formed by the atmospheric side wall surface of the protruding portion, connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate positioned in the recess so as to close the opening of the protruding portion from the atmospheric side, and allowing the high-frequency magnetic field generated from the antenna to pass into the processing chamber, wherein an elastically deformable support member is brought into contact with the dielectric plate, the dielectric plate is biased toward the wall surface of the recess by elastic force and supported, and then the processing chamber is evacuated, and the support member is moved to a position where it does not contact the dielectric plate. With this method of assembling the plasma processing apparatus, it is possible to achieve the same effects as the plasma processing apparatus described above.

[0056] Furthermore, it goes without saying that the present invention is not limited to the embodiments described above, and various modifications are possible without departing from its spirit. [Industrial applicability]

[0057] According to the present invention, in a plasma processing apparatus in which an antenna is placed outside the processing chamber, it is possible to increase the plasma density generated in the processing chamber, broaden its distribution, and prevent displacement and detachment of dielectric plates during assembly. [Explanation of symbols]

[0058] 100 ···Plasma processing equipment 1. Processing Room 2...Vacuum container 2a...opening 2p...Protruding part 2c ···recessed 222... Dielectric plate 3... Antenna 4...High frequency power supply 9 ···Support member W ···Item to be processed P...Plasma

Claims

1. A plasma processing apparatus that uses plasma to perform vacuum processing on objects placed in a processing chamber, The wall forming the processing chamber is bent to form a convex shape from the atmospheric side toward the processing chamber side, and the vacuum container has a protruding portion with an opening that penetrates in the thickness direction, An antenna is provided outside the processing chamber, within a recess formed by the atmospheric-side wall of the protruding portion, and is connected to a high-frequency power supply to generate a high-frequency magnetic field. A dielectric plate is placed in the recess so as to close the opening of the protruding portion from the atmospheric side, and allows the high-frequency magnetic field generated from the antenna to pass into the processing chamber. A plasma processing apparatus comprising a support member that is elastically deformable and attached to the recess, and can be selectively positioned between a support position in which it contacts the dielectric plate and supports the dielectric plate toward the wall surface of the recess by elastic force, and a retracted position which is retracted from the support position.

2. The plasma processing apparatus according to claim 1, wherein the support member is a substantially plate-shaped member formed by bending it to form a convex shape from the processing chamber side toward the atmosphere side, and is attached to the recess so as to cover the antenna and dielectric plate.

3. Viewed from the longitudinal direction of the aforementioned antenna, Multiple dielectric plates are arranged facing each other with the antenna in between. The plasma processing apparatus according to claim 2, wherein the support member is inserted between a pair of opposing dielectric plates in a deformed state at the support position.

4. The wall of the support member in the retracted position and the wall of the protruding portion form a housing space that surrounds and houses the antenna and the dielectric plate. The plasma processing apparatus according to claim 2, wherein the wall of the support member is provided with a ventilation opening that connects the housing space and the external space.

5. The plasma processing apparatus according to claim 4, wherein the wall of the support member is provided with a plurality of ventilation openings along the longitudinal direction of the antenna.

6. The plasma processing apparatus according to claim 4 or 5, wherein a plurality of the support members are provided along the longitudinal direction of the antenna.

7. A plasma processing apparatus for vacuum processing an object to be processed placed in a processing chamber using plasma, comprising: a vacuum vessel having a protruding portion with an opening that penetrates in the thickness direction, formed by bending the wall forming the processing chamber so as to be convex from the atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber in a recess formed by the atmospheric side wall of the protruding portion, connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate positioned in the recess so as to close the opening of the protruding portion from the atmospheric side, and allowing the high-frequency magnetic field generated by the antenna to pass into the processing chamber; An elastically deformable support member is brought into contact with the dielectric plate, and the dielectric plate is biased toward the wall surface of the recess by elastic force and supported. A method for assembling a plasma processing apparatus, wherein the processing chamber is then evacuated, and the support member is moved to a position where it does not come into contact with the dielectric plate.

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