Film formation method

Abstract

To provide a film forming method that restrains occurrence of voids when a film is embedded into a recess portion including a narrow portion.SOLUTION: A film forming method for filling a substrate having a recess portion including a narrowed portion, includes (a) a step S2 of supplying a first silicon-containing gas and a first nitrogen-containing gas to the substrate such that a first film is thicker at an opening portion of the recess portion than at a bottom portion of the recess portion, a step S3 of supplying a second silicon-containing gas and a second nitrogen-containing gas to the substrate to form a second film having the same thickness at the bottom portion and the opening portion of the recess portion or to form the second film that is thicker at the bottom portion of the recess portion than at the opening portion of the recess portion, a step S4 of partially etching the first film and the second film formed in the recess portion, and a step S6 of performing a cycle of steps S3 and S4 at plural times, after performing the cycle at plural times, supplying a third silicon-containing gas and a third nitrogen-containing gas to the substrate to form a third film having the same thickness at the bottom portion and the opening portion of the recess portion or to form the third film that is thicker at the bottom portion of the recess portion than at the opening portion of the recess portion.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a film forming method.

Background Art

[0002] In the semiconductor manufacturing process, as the structure is miniaturized, it is required to fill a recess with a high aspect ratio without voids (gaps). As an example of the process of filling a recess with a film, a technique of filling the film bottom-up from the bottom of the recess by alternately repeating deposition and etching is known (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing the generation of voids when filling a film into a recess having a constricted portion.

Means for Solving the Problems

[0005] A film-forming method according to one aspect of the present disclosure is a film-forming method for embedding a film in a recess of a substrate having a recess including a constricted portion, comprising: (a) supplying a first silicon-containing gas and a first nitrogen-containing gas to the substrate to form a first film thicker at the opening than at the bottom of the recess; and (b) supplying a second silicon-containing gas and a second nitrogen-containing gas to the substrate to form a second film of the same thickness at the bottom and the opening of the recess, or forming the second film thicker at the bottom than at the opening of the recess. The process includes (b) a step of partially etching the first film and the second film formed in the recess, and (d) supplying a third silicon-containing gas and a third nitrogen-containing gas to the substrate to form a third film of the same thickness at the bottom and the opening of the recess, or forming the third film thicker at the bottom of the recess than at the opening, wherein multiple cycles are performed, each including step (b) and step (c), and step (d) is performed after the multiple cycles have been completed. [Effects of the Invention]

[0006] According to this disclosure, the generation of voids when embedding a film in a recess having a constricted portion can be suppressed. [Brief explanation of the drawing]

[0007] [Figure 1] A flowchart showing an example of the film deposition method in the embodiment. [Figure 2] A cross-sectional view of a process showing an example of the film deposition method of the embodiment. [Figure 3] This figure shows an example of a processing system for carrying out the film deposition method of the embodiment. [Figure 4] This figure shows an example of a processing apparatus for carrying out the film deposition method of the embodiment. [Figure 5] Figure (1) shows the results of forming a SiN film in a recess under low coverage conditions. [Figure 6] Figure (2) shows the results of forming a SiN film in the recessed area under low coverage conditions. [Figure 7] A diagram illustrating the embedding characteristics when a film is embedded in a recess including a constricted area using a conventional film deposition method. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Embedding process] In semiconductor manufacturing processes, as structures become smaller, there is a need to fill recesses with high aspect ratios with films without voids (gaps). One example of a process for filling recesses with films is a technique (hereinafter also called the "DED process") that fills the film from the bottom up of the recess by alternately repeating deposition and etching. By using the DED process, the generation of voids can be suppressed.

[0010] However, when using the DED process to embed a film into a recess in a substrate that has a constricted area, damage to the substrate may occur at the opening of the recess. The reason why damage to the substrate may occur will be explained below with reference to Figure 7. Figure 7 is a diagram illustrating the embedding characteristics when embedding a film into a recess including a constricted area using a conventional film deposition method.

[0011] Figure 7(a) is a schematic cross-sectional view of a substrate in which a recess including a constricted portion is formed. As shown in Figure 7(a), the substrate 900 has a base 920 in which the recess 910 is formed. The recess 910 includes an opening 911, a constricted portion 912, and a bottom 913. The opening 911 is an open portion at the top of the recess 910. The constricted portion 912 is formed midway between the opening 911 and the bottom 913 and is a portion that is narrower in cross-sectional view than the opening 911 and the bottom 913. The bottom 913 is the portion at the bottom of the recess 910, including the bottom surface 914 of the recess 910.

[0012] FIG. 7(b) is a schematic cross-sectional view of a substrate when a film is conformally formed in the recess shown in FIG. 7(a), showing the state after deposition in the DED process. As shown in FIG. 7(b), in the recess 910 of the substrate 900, a film 930 is conformally formed to such an extent that the constriction 912 is not blocked.

[0013] FIG. 7(c) is a schematic cross-sectional view of a substrate when dry etching is performed on a substrate on which a film is conformally formed in a recess, showing the state after etching in the DED process. As shown in FIG. 7(c), in the substrate 900 in which the recess 910 including the constriction 912 is formed, in order to embed the film 930 in the bottom 913 by deposition after etching, it is preferable to etch and remove the film 930 deposited on the constriction 912. By the way, in the etching of the DED process, the film 930 conformally formed in the recess 910 is etched in a V shape in a cross-sectional view. That is, the etching is performed under the condition that the etching rate of the opening 911 with respect to the film 930 is higher than that of the bottom 913. Therefore, before removing the film 930 deposited on the constriction 912, the film 930 deposited on the opening 911 is removed. Then, if dry etching is continued in a state where the film 930 deposited on the opening 911 is removed, damage occurs to the base 920, such as a part of the base 920 being scraped off. This is because the selectivity ratio to the base is not infinite. [[ID=**6**]]

[0014] [[ID=**7**]] [[ID=**8**]]Hereinafter, a film forming method according to an embodiment capable of embedding a film without voids while suppressing damage to the base in a recess having a constriction will be described. [[ID=**9**]] [[ID=**10**]]

[0015] [[ID=**11**]] [[ID=**12**]]〔Film Forming Method〕[[ID=**13**]] [[ID=**14**]]Referring to FIGS. 1 and 2, an example of the film forming method according to the embodiment will be described. Hereinafter, the case of forming and embedding a silicon nitride film (SiN film) in a recess will be described as an example. [[ID=**15**]] [[ID=**16**]]

[0016] [[ID=**17**]] [[ID=**18**]](Step S1)[[ID=**19**]] It should be noted that there seems to be a formatting issue in the original text where some tags are not clearly related to the content in a typical way. I've translated it as accurately as possible while maintaining the original structure. If there are specific requirements or corrections regarding those tags, please let me know.First, in step S1, a substrate having a recess including a constriction is prepared. As shown in Fig. 2(a), the substrate 100 has a base 120 with a recess 110 formed therein. The recess 110 includes an opening 111, a constriction 112, and a bottom 113. The opening 111 is a portion that opens at the upper part of the recess 110. The constriction 112 is formed midway from the opening 111 to the bottom 113 and is a portion having a narrower width in cross-section than the opening 111 and the bottom 113. The bottom 113 is a portion including the bottom surface 114 of the recess 110 at the lower part of the recess 110. In the illustrated example, the recess 110 has a shape that continuously narrows from the opening 111 toward the constriction 112 and continuously expands from the constriction 112 toward the bottom 113. However, the recess 110 is not limited to the illustrated shape and may have another shape including the constriction 112 midway from the opening 111 to the bottom 113. The recess 110 is a trench, a hole, or the like. The base 120 is made of, for example, silicon or an insulating film, and metal or a metal compound may be partially present.

[0017] (Step S2) Next, in step S2, as shown in Fig. 2(b), a SiN film 130 is formed in the recess 110 under the condition of being formed thicker at the opening 111 than at the bottom 113 of the recess 110 (hereinafter also referred to as the "low coverage condition").

[0018] Step S2 may include forming the SiN film 130 by, for example, atomic layer deposition (ALD: Atomic Layer Deposition).

[0019] When forming a SiN film 130 by ALD, it is preferable to alternately repeat the steps of supplying a silicon-containing gas to the substrate 100 and exposing the substrate 100 to a plasma generated from a gas containing N2. In the step of supplying a silicon-containing gas to the substrate 100, the silicon-containing gas is adsorbed onto the substrate 100, and in the step of exposing the substrate 100 to a plasma generated from a gas containing N2, the silicon-containing gas adsorbed onto the substrate 100 is nitrided to form a SiN layer. Here, since the radicals in the plasma generated from the gas containing N2 have a short lifetime, they do not easily reach the bottom 113 of the recess 110. Therefore, the SiN film 130 formed at the bottom 113 of the recess 110 becomes thinner. As a result, the SiN film 130 can be formed particularly thickly at the opening 111 than at the bottom 113 of the recess 110. Note that the gas containing N2 may be, for example, only N2 gas, or it may further contain NH3 and H2. However, from the viewpoint of avoiding a large difference in film thickness between the bottom 113 and the opening 111, it is preferable that the gas containing N2 is N2 only.

[0020] Furthermore, when forming a SiN film 130 by ALD, it is preferable to alternately repeat the steps of supplying a silicon-containing gas to the substrate 100 in a supply-limiting state and supplying a nitrogen-containing gas to the substrate 100. A supply-limiting state means a region in which the amount of processing gas supplied to the processing container containing the substrate 100 is very small, and the film formation rate is mainly governed by the amount of processing gas supplied. For example, a supply-limiting state can be achieved by reducing the amount of processing gas supplied and increasing the processing temperature. By supplying a silicon-containing gas to the substrate 100 in a supply-limiting state, the silicon-containing gas supplied to the recess 110 is adsorbed and consumed at the opening 111 and the constricted portion 112 before it reaches the bottom 113. As a result, the SiN film 130 can be formed particularly thickly at the opening 111 than at the bottom 113 of the recess 110. Note that the gas supplied to the substrate 100 in a supply-limiting state is not limited to a silicon-containing gas, but may also be a nitrogen-containing gas, or both a silicon-containing gas and a nitrogen-containing gas.

[0021] Furthermore, when forming the SiN film 130 by ALD, the process may include a step of forming the SiN film 130 and a step of etching the SiN film 130. The process of forming the SiN film 130 includes repeating a cycle that includes the steps of supplying a silicon-containing gas to the substrate 100 and supplying a nitrogen-containing gas to the substrate 100, and may further include a step of exposing the substrate 100 to plasma generated from a gas containing He. In the step of supplying the silicon-containing gas to the substrate 100, the silicon-containing gas is adsorbed onto the substrate 100, and in the step of supplying the nitrogen-containing gas to the substrate 100, the silicon-containing gas adsorbed onto the substrate 100 is nitrided to form a SiN layer. In addition, in the step of exposing the substrate 100 to plasma generated from a gas containing He, the SiN layer and / or the SiN film 130 are modified into a film with high etching resistance. Here, in modification by plasma generated from a gas containing He, the opening 111 of the recess 110 is more easily modified into a film with high etching resistance than the bottom 113 of the recess 110. Therefore, in the etching step of the SiN film 130, which is performed after the step of forming the SiN film 130, the amount of etching of the SiN film 130 at the bottom 113 of the recess 110 is greater than at the opening 111. As a result, the SiN film 130 can be formed particularly thickly at the opening 111 of the recess 110 compared to the bottom 113. Note that the step of supplying nitrogen-containing gas to the substrate 100 may be changed to a step of exposing the substrate 100 to plasma generated from the nitrogen-containing gas. Also, the gas containing He may contain, for example, Ar. Furthermore, the etching step of the SiN film 130 may be either dry etching or wet etching. When etching the SiN film 130 by dry etching, NF3, CHF-based gases, etc. can be used as the etching gas. In addition, gases such as O2, N2, and H2 may be added to these etching gases. When etching the SiN film 130 by wet etching, dilute hydrofluoric acid (DHF: Diluted HF), etc. can be used.

[0022] Furthermore, step S2 may include forming a SiN film 130 by chemical vapor deposition (CVD). By forming the SiN film 130 by CVD, the SiN film 130 can be formed thicker at the opening 111 than at the bottom 113 of the recess 110.

[0023] When forming the SiN film 130 by CVD, the process may include forming the SiN film 130 by thermal CVD (Th-CVD), in which the reaction between a silicon-containing gas and a nitrogen-containing gas is carried out by heat. That is, the process may include forming the SiN film 130 by supplying a silicon-containing gas and a nitrogen-containing gas to the substrate 100.

[0024] Furthermore, when forming the SiN film 130 by CVD, the SiN film 130 may be formed by plasma CVD (PE-CVD), in which the reaction between a silicon-containing gas and a nitrogen-containing gas is assisted by plasma. That is, the SiN film 130 may be formed by exposing the substrate 100 to plasma generated from a silicon-containing gas and a nitrogen-containing gas.

[0025] Furthermore, when forming the SiN film 130 by CVD, it is preferable to supply silicon-containing gas and nitrogen-containing gas to the substrate 100 in a supply-limiting manner. By supplying silicon-containing gas and nitrogen-containing gas to the substrate 100 in a supply-limiting manner, the silicon-containing gas and nitrogen-containing gas supplied to the recess 110 are consumed at the opening 111 and the constricted portion 112 before reaching the bottom 113. As a result, the SiN film 130 can be formed particularly thickly at the opening 111 than at the bottom 113 of the recess 110.

[0026] In step S2, the silicon-containing gas used can be one or more gases selected from the group consisting of, for example, hexachlorodisilane (HCD), monosilane [SiH4], disilane [Si2H6], dichlorosilane (DCS), hexaethylaminodisilane, hexamethyldisilazane (HMDS), tetrachlorosilane (TCS), disilylanine (DSA), trisilylamine (TSA), and bisphasic butylaminosilane (BTBAS), butylaminosilane, dimethylaminosilane, bisdimethylaminosilane, tridimethylaminosilane, diethylaminosilane, bisdiethylaminosilane, dipropylaminosilane, diisopropylaminosilane, hexakisethylaminodisilane, etc.

[0027] Furthermore, the nitrogen-containing gas used in step S2 can be one or more gases selected from the group consisting of, for example, nitrogen (N2), ammonia (NH3), diazene (N2H2), hydrazine (N2H4), and organic hydrazine compounds such as monomethylhydrazine (CH3(NH)NH2).

[0028] (Process S3) Next, in step S3, as shown in Figure 2(c), a SiN film 140 is formed in the recess 110 under conditions that the bottom 113 and the opening 111 of the recess 110 are formed to the same thickness, or under conditions that the bottom 113 is thicker than the opening 111 of the recess 110.

[0029] Step S3 may include, for example, forming a SiN film 140 by ALD. By forming the SiN film 140 by ALD, the SiN film 140 can be formed with the same thickness (conformal) at the bottom 113 of the recess 110 and the opening 111.

[0030] When forming a SiN film 140 by ALD, the process may include forming the SiN film 140 by thermal ALD (Th-ALD), which involves a thermal reaction between a silicon-containing gas and a nitrogen-containing gas. That is, the process may include alternately repeating the steps of supplying a silicon-containing gas to the substrate 100 and supplying a nitrogen-containing gas to the substrate 100 to form the SiN film 140. In the step of supplying the silicon-containing gas to the substrate 100, the silicon-containing gas is adsorbed onto the substrate 100, and in the step of supplying the nitrogen-containing gas to the substrate 100, the silicon-containing gas adsorbed onto the substrate 100 is nitrided to form a SiN layer. Examples of nitrogen-containing gases that can be used in thermal ALD include NH3 and N2H4.

[0031] Furthermore, when forming the SiN film 140 by ALD, the process may include forming the SiN film 140 by plasma ALD (PE-ALD), in which the reaction between a silicon-containing gas and a nitrogen-containing gas is assisted by plasma. That is, the process may include alternately repeating the steps of supplying a silicon-containing gas to the substrate 100 and exposing the substrate 100 to plasma generated from a gas containing a nitrogen-containing gas. As the nitrogen-containing gas used in plasma ALD, for example, one or more gases selected from the group consisting of NH3, N2 / H2, and NH3 / N2 / H2 can be used. A rare gas may also be added to the nitrogen-containing gas.

[0032] Furthermore, when forming a SiN film 140 by ALD, the SiN layer and / or SiN film 140 may be modified into a film with high etching resistance by exposing the substrate 100 to plasma generated from a modified gas. That is, the process may include repeatedly supplying a silicon-containing gas to the substrate 100, exposing the substrate 100 to plasma generated from a gas containing nitrogen, and exposing the substrate 100 to plasma generated from a modified gas. Examples of modified gases include He and H2.

[0033] Furthermore, step S3 may include a step of forming an inhibiting region on the side of the recess 110 that opens above the constricted portion 112 (i.e., the side with the opening 111 that is shallower than the constricted portion 112) to inhibit the deposition of the SiN film. This inhibits the deposition of the SiN film 140 on the opening 111 of the recess 110, so that the SiN film 140 can be formed thicker at the bottom 113 of the recess 110 than at the opening 111. The step of forming the inhibiting region may include, for example, exposing the substrate 100 to a plasma generated from a gas containing a halogen. Examples of halogen-containing gases include fluorine gas (F2), chlorine gas (Cl2), hydrogen fluoride gas (HF), etc. The step of forming the inhibiting region may also include exposing the substrate 100 to a plasma generated from a gas containing N2, for example.

[0034] Furthermore, the silicon-containing gas used in step S3 can be the same gas used in step S2, for example, silicon halide or aminosilane.

[0035] (Process S4) Next, in step S4, as shown in Figure 2(d), the SiN films 130 and 140 formed in the recess 110 are etched under etching conditions where the etching rate at the opening 111 is greater than that at the bottom 113, partially removing the SiN films 130 and 140. As a result, the opening 111 and the constricted portion 112 are widened, so that in step S3, which is performed again later, the SiN film 140 can be embedded on the side of the bottom 113 that is narrower than the constricted portion 112.

[0036] In step S4, etching of the SiN films 130 and 140 is performed under conditions where the etching rate for the SiN films 130 is higher at the opening 111 than at the bottom 113. As a result, the amount of etching of the SiN films 130 and 140 is greater at the opening 111 than at the constricted portion 112. Therefore, there is a risk that the SiN films 130 and 140 formed at the opening 111 will be removed before the SiN films 130 and 140 formed at the constricted portion 112 are removed, exposing the substrate 120. However, in this embodiment, in step S2, the SiN film 130 is formed thicker at the opening 111 than at the bottom 113 of the recess 110. This prevents the SiN films 130 and 140 formed at the opening 111 from being removed before the SiN films 130 and 140 formed at the constricted portion 112 are removed. Therefore, the exposure of the substrate 120 at the opening 111 can be prevented. As a result, even when the substrate selectivity ratio is not infinite, damage to the substrate 120 at the opening 111 can be suppressed.

[0037] Step S4 may include supplying NF3 or a CHF-based gas to the substrate 100. This allows the SiN films 130 and 140 formed in the recesses 110 to be etched under etching conditions where the etching rate at the openings 111 is greater than that at the bottom 113.

[0038] Furthermore, step S4 may include supplying NF3 or a CHF-based gas to the substrate 100 in a rate-limiting manner. This allows the SiN films 130 and 140 formed in the recesses 110 to be etched under etching conditions where the etching rate at the openings 111 is greater than that at the bottom 113.

[0039] (Process S5) Next, in step S5, it is determined whether the number of repetitions of the cycle including steps S3 and S4 has reached a predetermined number. If the number of repetitions of the cycle including steps S3 and S4 has not reached the predetermined number, steps S3 and S4 are performed again. That is, the deposition of a thin SiN film 140 with conformal or opening 111 and etching of the SiN films 130 and 140 are repeated until the predetermined number is reached. As a result, as shown in Figure 2(e), the SiN film 140 can be embedded voidlessly on the bottom 113 side of the constricted portion 112 in the recess 110. If the number of repetitions of the cycle including steps S3 and S4 reaches the predetermined number, the process proceeds to step S6. The predetermined number is one or more.

[0040] Furthermore, if the SiN film 130 formed on the opening 111 is removed in step S4, exposing the substrate 120, or if there is a risk of exposure, step S2 may be performed after step S4 and before step S3 while steps S3 and S4 are being repeated. In other words, a portion of multiple cycles, each including steps S3 and S4, may include step S2.

[0041] (Process S6) Next, in step S6, a SiN film 140 is formed in the recess 110 under conditions that the bottom 113 and the opening 111 of the recess 110 are formed to the same thickness, or under conditions that the bottom 113 is thicker than the opening 111 of the recess 110. As a result, the SiN film 140 can be embedded in the recess 110 without voids, as shown in Figure 2(f).

[0042] Step S6 may include, for example, forming a SiN film 140 by ALD. By forming the SiN film 140 by ALD, the SiN film 140 can be formed with the same thickness (conformal) at the bottom 113 and the opening 111 of the recess 110. Alternatively, by forming the SiN film 140 by ALD, the SiN film 140 can be formed in which the bottom 113 is thicker than the opening 111 of the recess 110. The method for forming the SiN film 140 by ALD may be the same as the method for forming the SiN film 140 by ALD in step S3.

[0043] According to the embodiment described above, a SiN film is formed on a substrate having a recess including a constricted portion under low coverage conditions. Then, the SiN film is embedded in the recess by repeatedly depositing a conformal or thin SiN film with openings and etching the SiN film. As a result, the SiN film formed under low coverage conditions functions as a protective film that prevents the exposure of the substrate during etching. This suppresses damage to the substrate during etching of the SiN film. Furthermore, since the SiN film is formed in the recess by repeatedly depositing a conformal or thin SiN film with openings and etching the SiN film, blockage of the constricted portion can be prevented. As a result, the generation of voids when embedding the film in the recess can be suppressed.

[0044] [Processing System] Referring to Figure 3, an example of a processing system for carrying out the film deposition method of the embodiment will be described.

[0045] The processing system PS comprises processing units PM1 to PM4, vacuum transport chambers VTM, load lock chambers LL1 to LL3, atmospheric transport chamber LM, load ports LP1 to LP3, and the overall control unit CU0.

[0046] Processing units PM1 to PM4 are connected to the vacuum transfer chamber VTM via gate valves G11 to G14, respectively. The inside of processing units PM1 to PM4 is reduced to a predetermined vacuum atmosphere, and the substrate W is subjected to the desired processing inside.

[0047] The vacuum transport chamber VTM is depressurized to a predetermined vacuum atmosphere. The vacuum transport chamber VTM is equipped with a transport mechanism TR1 capable of transporting substrates W under depressurized conditions. The transport mechanism TR1 transports substrates W to the processing units PM1 to PM4 and the load lock chambers LL1 to LL3. The transport mechanism TR1 has, for example, two independently movable transport arms FK11 and FK12.

[0048] Load lock chambers LL1 to LL3 are connected to the vacuum transport chamber VTM via gate valves G21 to G23, and to the atmospheric transport chamber LM via gate valves G31 to G33. The load lock chambers LL1 to LL3 are designed to allow switching between atmospheric and vacuum atmospheres.

[0049] The atmospheric transport chamber LM is an atmospheric environment, for example, with a downflow of clean air. An aligner AN is provided inside the atmospheric transport chamber LM for aligning the substrate W. A transport mechanism TR2 is also provided inside the atmospheric transport chamber LM. The transport mechanism TR2 transports the substrate W to the load lock chambers LL1 to LL3, the carriers C in the load ports LP1 to LP3 (described later), and the aligner AN.

[0050] Load ports LP1 to LP3 are located on the long side walls of the atmospheric transport chamber LM. Load ports LP1 to LP3 are fitted with either a carrier C containing a substrate W or an empty carrier C. For example, a FOUP (Front Opening Unified Pod) can be used as the carrier C.

[0051] The central control unit (CU) may be, for example, a computer. The central control unit (CU) includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage devices, etc. The CPU operates based on programs stored in the ROM or auxiliary storage devices and controls each part of the processing system PS. For example, the central control unit (CU) performs operations such as the operation of processing devices PM1 to PM4, the operation of transport mechanisms TR1 and TR2, the opening and closing of gate valves G11 to G14, G21 to G23, and G31 to G33, and the switching of the atmosphere in load lock chambers LL1 to LL3.

[0052] In the processing system PS of the embodiment, steps S2 to S4 and S6 of the film formation method of the embodiment are carried out continuously under a reduced pressure atmosphere using at least one of the processing devices PM1 to PM4. For example, steps S2 to S4 and S6 may be carried out continuously using one of the processing devices PM1 to PM4. Alternatively, for example, steps S2 and S3 may be carried out continuously using one of the processing devices PM1 to PM4, step S4 may be carried out using another one, and step S6 may be carried out using yet another one. Alternatively, for example, processing devices PM1 to PM4 may each carry out different steps S2 to S4 and S6.

[0053] [Processing device] Referring to Figure 4, an example of the processing units used as processing units PM1 to PM4 in the processing system PS shown in Figure 3 will be described.

[0054] The processing device includes a processing container 1, a mounting platform 2, a shower head 3, an exhaust unit 4, a gas supply unit 5, an RF power supply unit 8, a control unit 9, and the like.

[0055] The processing container 1 is made of a metal such as aluminum and has a substantially cylindrical shape. The processing container 1 houses a substrate W. The substrate W is, for example, a semiconductor wafer. An inlet / outlet 11 for loading or unloading the substrate W is formed in the side wall of the processing container 1. The inlet / outlet 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 with a rectangular cross-section is provided on top of the main body of the processing container 1. A slit 13a is formed along the inner circumference of the exhaust duct 13. An exhaust port 13b is formed in the outer wall of the exhaust duct 13. A top wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1 via an insulating member 16. The space between the exhaust duct 13 and the insulating member 16 is airtightly sealed with a seal ring 15. The partition member 17 partitions the inside of the processing container 1 vertically when the mounting table 2 (and cover member 22) is raised to the processing position described later.

[0056] The mounting table 2 horizontally supports the substrate W within the processing container 1. The mounting table 2 is formed in the shape of a disc corresponding to the size of the substrate W and is supported by a support member 23. The mounting table 2 is made of a ceramic material such as AlN or a metallic material such as aluminum or nickel alloy, and a heater 21 for heating the substrate W is embedded inside. The heater 21 is powered by a heater power supply (not shown) and generates heat. The output of the heater 21 is controlled by the temperature signal of a thermocouple (not shown) provided near the upper surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramic material such as alumina so as to cover the outer peripheral region of the upper surface and the sides.

[0057] A support member 23 is provided on the bottom surface of the mounting platform 2 to support the mounting platform 2. The support member 23 extends from the center of the bottom surface of the mounting platform 2 through a hole formed in the bottom wall of the processing container 1 and downwards to the processing container 1, and its lower end is connected to a lifting mechanism 24. The lifting mechanism 24 causes the mounting platform 2 to move up and down via the support member 23 between the processing position shown in Figure 1 and the transport position shown by the dashed line below it, where the substrate W can be transported. A flange portion 25 is attached to the lower part of the support member 23 below the processing container 1. A bellows 26 is provided between the bottom surface of the processing container 1 and the flange portion 25. The bellows 26 partitions the atmosphere inside the processing container 1 from the outside air and expands and contracts in accordance with the lifting and lowering movement of the mounting platform 2.

[0058] Near the bottom of the processing container 1, three wafer support pins (only two are shown) are provided, protruding upward from the lifting plate 27a. The wafer support pins 27 are raised and lowered via the lifting plate 27a by a lifting mechanism 28 located below the processing container 1. The wafer support pins 27 are inserted through holes 2a provided in the mounting table 2 at the transport position, and are able to protrude and retract relative to the upper surface of the mounting table 2. By raising and lowering the wafer support pins 27, the substrate W is transferred between the transport mechanism (not shown) and the mounting table 2.

[0059] The shower head 3 supplies processing gas into the processing container 1 in a shower-like manner. The shower head 3 is made of metal, is positioned opposite the mounting base 2, and has approximately the same diameter as the mounting base 2. The shower head 3 has a main body 31 and a shower plate 32. The main body 31 is fixed to the top wall 14 of the processing container 1. The shower plate 32 is connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32. The gas diffusion space 33 is provided with a gas introduction hole 36 that penetrates the top wall 14 of the processing container 1 and the center of the main body 31. An annular projection 34 protruding downward is formed on the periphery of the shower plate 32. A gas discharge hole 35 is formed on the flat part inside the annular projection 34. When the mounting base 2 is in the processing position, a processing space 38 is formed between the mounting base 2 and the shower plate 32, and an annular gap 39 is formed when the upper surface of the cover member 22 and the annular projection 34 are close together.

[0060] The exhaust unit 4 exhausts the inside of the processing container 1. The exhaust unit 4 has an exhaust pipe 41 connected to the exhaust port 13b and an exhaust mechanism 42 connected to the exhaust pipe 41, which includes a vacuum pump and a pressure control valve. During processing, the gas inside the processing container 1 reaches the exhaust duct 13 through the slit 13a, and is exhausted from the exhaust duct 13 through the exhaust pipe 41 by the exhaust mechanism 42.

[0061] The gas supply unit 5 supplies various processing gases to the shower head 3. The gas supply unit 5 includes a gas source 51 and a gas line 52. The gas source 51 includes, for example, a source for supplying various processing gases, a mass flow controller, and a valve (none of which are shown). The various processing gases include the gases used in the film formation method of the embodiment described above. The various gases are introduced from the gas source 51 into the gas diffusion space 33 via the gas line 52 and the gas inlet hole 36.

[0062] Furthermore, the processing apparatus is a capacitively coupled plasma apparatus, in which the mounting stage 2 functions as the lower electrode and the shower head 3 functions as the upper electrode. The mounting stage 2 is grounded via a capacitor (not shown). However, the mounting stage 2 may be grounded without a capacitor, for example, or via a circuit combining a capacitor and a coil. The shower head 3 is connected to an RF power supply unit 8.

[0063] The RF power supply unit 8 supplies high-frequency power (hereinafter also referred to as "RF power") to the shower head 3. The RF power supply unit 8 includes an RF power supply 81, a matching unit 82, and a power supply line 83. The RF power supply 81 is a power source that generates RF power. The RF power has a frequency suitable for plasma generation. The frequency of the RF power is, for example, within the range of 450 kHz in the low frequency band to 2.45 GHz in the microwave band. The RF power supply 81 is connected to the main body 31 of the shower head 3 via the matching unit 82 and the power supply line 83. The matching unit 82 has a circuit for matching the load impedance to the internal impedance of the RF power supply 81. Although the RF power supply unit 8 has been described as supplying RF power to the shower head 3, which is the upper electrode, it is not limited to this. It may also be configured to supply RF power to the mounting base 2, which is the lower electrode.

[0064] The control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of the processing unit. The control unit 9 may be located inside or outside the processing unit. If the control unit 9 is located outside the processing unit, the control unit 9 can control the processing unit by communication means such as wired or wireless.

[0065] [Evaluation Results] Referring to Figures 5 and 6, a SiN film was formed in the recess (trench) under the low coverage conditions used in step S2 of the film formation method of the embodiment, and the formed SiN film was observed with an electron microscope.

[0066] First, a substrate containing recesses formed by an amorphous silicon (a-Si) film on a SiN film was prepared. Next, under low-coverage conditions, a SiN film was formed in the recesses by alternately repeating the steps of supplying a silicon-containing gas to the substrate and exposing the substrate to a plasma generated from a gas containing N2. Bis-diethylaminosilane (BDEAS) was used as the silicon-containing gas. A mixed gas of N2 and Ar was used as the gas containing N2. Specifically, in a processing apparatus as shown in Figure 4, for example, the pressure was set to 0.1 to 50 Torr (1.3 × 10⁻⁶). 1 ~6.7×10 3 A SiN film was formed in the recess by alternately repeating the steps of supplying BDEAS at a specific flow rate for 0.05 to 1.0 seconds while maintaining a pressure of Pa, and exposing the recess to a plasma with a power of 10 to 1000 W generated from a specific flow rate of N2 for 0.1 to 6.0 seconds.

[0067] Figure 5 shows the results of forming a SiN film in a recess under low coverage conditions, and the results are shown using a scanning electron microscope (SEM).

[0068] As shown in Figure 5, it can be seen that the SiN film is formed thicker at the opening than at the bottom of the recess. This result indicates that by alternately repeating the steps of supplying silicon-containing gas to the substrate and exposing the substrate to plasma generated from gas containing N2, it is possible to form a SiN film thicker at the opening than at the bottom of the recess.

[0069] Next, a substrate containing recesses formed of crystalline silicon (Si) was prepared. Then, under low coverage conditions, a SiN film was formed in the recesses by performing a SiN film formation step and a SiN film etching step in that order. In the SiN film formation step, a cycle was repeated that included the steps of supplying a silicon-containing gas to the substrate, exposing the substrate to plasma generated from a nitrogen-containing gas, and exposing the substrate to plasma generated from a gas containing He. In the SiN film etching step, wet etching using dilute hydrofluoric acid was performed. Dichlorosilane (DCS) was used as the silicon-containing gas. NH3 was used as the nitrogen-containing gas. A mixed gas of He and Ar was used as the gas containing He. Specifically, in a processing apparatus as shown in Figure 4, for example, the pressure was set to 0.1 to 50 Torr (1.3 × 10⁻⁶). 1 ~6.7×10 3 A SiN film was formed in the recess by repeatedly performing the following steps: maintaining a pressure of Pa (Pa) while supplying DCS at a specific flow rate for 0.05 to 1.0 seconds; exposing the recess to a plasma with a power of 100 to 3000 W generated from a specific flow rate of NH3 for 1.0 to 10.0 seconds; and exposing the recess to a plasma with a power of 10 to 1000 W generated from a specific flow rate of He for 1.0 to 10.0 seconds.

[0070] Figure 6 shows the results of forming a SiN film in a recess under low coverage conditions, and the results are shown by a transmission electron microscope (TEM). Figure 6(a) shows the TEM observation results after the SiN film formation process, and Figure 6(b) shows the TEM observation results after the etching process of the SiN film.

[0071] As shown in Figure 6(a), after the SiN film formation process, a conformally formed SiN film is observed in the recesses. Furthermore, as shown in Figure 6(b), after the etching process, the SiN film formed at the bottom of the recesses is almost completely removed, while the SiN film formed at the openings of the recesses remains. These results demonstrate that by exposing the substrate to plasma generated from a gas containing He during the SiN film formation process, and then etching the formed SiN film during the SiN film formation process, a thicker SiN film can be formed at the openings of the recesses than at the bottom.

[0072] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0073] In the embodiments described above, the case where the processing apparatus is a capacitively coupled plasma apparatus has been explained, but this disclosure is not limited thereto. For example, it may be a plasma apparatus that uses inductively coupled plasma, surface wave plasma (microwave plasma), magnetron plasma, remote plasma, etc. as the plasma source.

[0074] In the embodiments described above, a case in which a SiN film is embedded in a recess was explained as an example of a film formation method, but this disclosure is not limited thereto. For example, the film embedded in the recess may be a silicon oxide film (SiO2 film), a metal nitride film, or a metal oxide film.

[0075] In the embodiments described above, the processing apparatus is described as a single-wafer processing apparatus that processes wafers one at a time, but the disclosure is not limited thereto. For example, the processing apparatus may be a batch processing apparatus that processes multiple wafers at once. Alternatively, for example, the processing apparatus may be a semi-batch processing apparatus that processes wafers by rotating multiple wafers placed on a rotary table in a processing container and passing them sequentially through a region supplied with a first gas and a region supplied with a second gas. Furthermore, there may be a multi-wafer processing apparatus equipped with multiple mounting stages in a single processing container. [Explanation of symbols]

[0076] 100 circuit boards 110 recess 111 Opening 112 Stenosis 113 Bottom 130 SiN film 140 SiN film

Claims

1. A method for forming a film in which a film is embedded in a recess of a substrate having a recess including a constricted portion, (a) A step of supplying a first silicon-containing gas and a first nitrogen-containing gas to the substrate to form a first film thicker at the opening than at the bottom of the recess, (b) A step of supplying a second silicon-containing gas and a second nitrogen-containing gas to the substrate to form a second film with the same thickness at the bottom and the opening of the recess, or a step of forming the second film thicker at the bottom of the recess than at the opening, (c) A step of partially etching the first film and the second film formed in the recess, (d) A step of supplying a third silicon-containing gas and a third nitrogen-containing gas to the substrate to form a third film with the same thickness at the bottom and the opening of the recess, or a step of forming a third film thicker at the bottom of the recess than at the opening, It has, Perform multiple cycles, each including step (b) and step (c), and then perform step (d) after the multiple cycles have been completed. Film formation method.

2. The method for forming a film according to claim 1, wherein at least a portion of the multiple cycles includes step (a).

3. The method for forming a film according to claim 1, wherein step (a) comprises alternately supplying the first silicon-containing gas and the first nitrogen-containing gas to form the first film.

4. The supply of the first nitrogen-containing gas in step (a) is N ２ The film formation method according to claim 3, comprising exposing the substrate to a plasma generated from a gas containing the above.

5. The method for forming a film according to claim 1, further comprising step (a) exposing the substrate to plasma generated from a reformed gas to reform the first film.

6. The method for forming a film according to claim 1, wherein step (a) further comprises supplying an etching gas to the substrate to etch the first film.

7. The method for forming a film according to claim 1, wherein step (a) includes simultaneously supplying the first silicon-containing gas and the first nitrogen-containing gas to form the first film.

8. The method for forming a film according to claim 1, wherein step (a) includes exposing the substrate to a plasma generated from the first silicon-containing gas and the first nitrogen-containing gas to form the first film.

9. The film formation method according to claim 1, wherein at least one of the first silicon-containing gas and the first nitrogen-containing gas in step (a) is supplied in a supply-limiting state.

10. The film-forming method according to claim 1, wherein step (b) comprises alternately supplying the second silicon-containing gas and the second nitrogen-containing gas to form the second film.

11. The method for forming a film according to claim 10, wherein the supply of the second nitrogen-containing gas in step (b) includes exposing the substrate to a plasma generated from the second nitrogen-containing gas.

12. The method for forming a film according to claim 1, further comprising step (b) exposing the substrate to plasma generated from a reformed gas to reform the second film.

13. The method for forming a film according to claim 1, wherein step (b) includes forming an inhibitory region in the recess on the side of the opening that inhibits the deposition of the film.

14. The film-forming method according to claim 1, wherein step (d) comprises alternately supplying the third silicon-containing gas and the third nitrogen-containing gas to form the third film.

15. The method for forming a film according to claim 14, wherein the supply of the third nitrogen-containing gas in step (d) includes exposing the substrate to a plasma generated from the third nitrogen-containing gas.

16. The method for forming a film according to claim 1, further comprising step (d) exposing the substrate to plasma generated from a reformed gas to reform the third film.

17. The method for forming a film according to claim 1, wherein step (d) includes forming an inhibitory region in the recess on the side of the opening that inhibits the deposition of the film.

18. The method for forming a film according to claim 1, wherein the first film, the second film, and the third film are silicon nitride films.

19. The method for forming a film according to claim 1, wherein steps (a), (b), (c), and (d) are carried out continuously under a reduced pressure atmosphere.

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