Light-emitting devices, projectors, displays, and head-mounted displays

Abstract

To provide a light-emitting device that can be reduced in size.SOLUTION: A light-emitting device has: a first semiconductor layer having a first conductivity type; a second semiconductor layer provided between the first semiconductor layer and a second electrode, and having a second conductivity type different from the first conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating layer provided along a side face of the first semiconductor layer; and a metal layer in contact with the insulating layer, provided along the side face of the first semiconductor layer, and reflecting light generated in the light-emitting layer. The light generated in the light-emitting layer is emitted from the side of a first electrode. The metal layer has a first end in a first direction directed from the light-emitting layer to the first semiconductor layer. The first semiconductor layer has a second end in the first direction. In the first direction, the position of the first end is the same as the position of the second end, or the position of the first end is on the side of the first direction with respect to the position of the second end.SELECTED DRAWING: Figure 1

Description

Technical Field

[0006] , , , ,

[0001] The present invention relates to a light-emitting device, a projector, a display, and a head-mounted display.

Background Art

[0002] An LED (Light Emitting Diode) is used as a light source for a projector, a head-mounted display, or the like.

[0003] For example, Patent Document 1 describes an image display element in which micro light-emitting elements are arranged in an array. The micro light-emitting element has an excitation light-emitting element that generates excitation light, and a reflective wall that surrounds the excitation light-emitting element. The excitation light-emitting element includes a main body formed by dividing a nitride semiconductor layer, an N electrode, and a transparent electrode. The entire side surface of the main body is covered with a transparent insulating film, and the transparent electrode covers the transparent insulating film.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the micro light-emitting element described in Patent Document 1, since the reflective wall is separated from the transparent insulating film, the element becomes large. When the element becomes large, it is impossible to arrange the elements at high density, and it is impossible to achieve high density of pixels.

Means for Solving the Problems

[0006] One aspect of the light-emitting device according to the present invention is <​​​ A second semiconductor layer is provided between the first semiconductor layer and the second electrode, and has a second conductivity type different from the first conductivity type. A light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, An insulating layer provided along the side surface of the first semiconductor layer, A metal layer is provided in contact with the insulating layer and along the side surface of the first semiconductor layer, and reflects light generated by the light-emitting layer, It has, The light generated in the light-emitting layer is emitted from the first electrode side. The metal layer has a first end in a first direction toward the first semiconductor layer from the light-emitting layer, The first semiconductor layer has a second end in the first direction, In the first direction, the position of the first end is the same as the position of the second end, Alternatively, the position of the first end is on the first side of the position of the second end.

[0007] One aspect of the projector according to the present invention is: It has one embodiment of the aforementioned light-emitting device.

[0008] One aspect of the display according to the present invention is: It has one embodiment of the aforementioned light-emitting device.

[0009] One embodiment of the head-mounted display according to the present invention is: It has one embodiment of the aforementioned light-emitting device. [Brief explanation of the drawing]

[0010] [Figure 1] A schematic cross-sectional view showing a light-emitting device according to the first embodiment. [Figure 2] A schematic plan view showing the light-emitting device according to the first embodiment. [Figure 3] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 4] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 5] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 6] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 7] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 8] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 9] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 10] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 11] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 12] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 13] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 14] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 15] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the first embodiment. [Figure 16] Cross-sectional view schematically showing the light-emitting device according to the first modification of the first embodiment. [Figure 17] Cross-sectional view schematically showing the light-emitting device according to the second modification of the first embodiment. [Figure 18] Cross-sectional view schematically showing the light-emitting device according to the third modification of the first embodiment. [Figure 19] Cross-sectional view schematically showing the light-emitting device according to the second embodiment. [Figure 20] Cross-sectional view schematically showing the light-emitting device according to the modification of the second embodiment. [Figure 21] Cross-sectional view schematically showing the light-emitting device according to the third embodiment. [Figure 22] Cross-sectional view schematically showing the manufacturing process of the light-emitting device according to the third embodiment. [Figure 23] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the third embodiment. [Figure 24] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the third embodiment. [Figure 25] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the third embodiment. [Figure 26] A schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the third embodiment. [Figure 27] A schematic diagram showing a projector according to the fourth embodiment. [Figure 28] A schematic plan view showing the display according to the fifth embodiment. [Figure 29] A schematic cross-sectional view showing the display according to the fifth embodiment. [Figure 30] A schematic perspective view showing a head-mounted display according to the sixth embodiment. [Figure 31] A schematic diagram showing the image forming apparatus and light guide apparatus of a head-mounted display according to the sixth embodiment. [Modes for carrying out the invention]

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. The embodiments described below are not intended to unduly limit the scope of the present invention as described in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First Embodiment 1.1. Light-emitting device First, the light-emitting device according to the first embodiment will be described with reference to the drawings. Figure 1 is a schematic cross-sectional view showing the light-emitting device 100 according to the first embodiment. In Figure 1, the X-axis, Y-axis, and Z-axis are shown as three mutually orthogonal axes.

[0013] The light-emitting device 100, as shown in Figure 1, for example, includes a laminate 10, a first electrode 20, a second electrode 30, a first insulating layer 40, a metal layer 50, a second insulating layer 60, a third insulating layer 70, a structure 80, and a wiring board 90. The light-emitting device 100 is, for example, an LED.

[0014] The laminate 10 is provided between the first electrode 20 and the second electrode 30. In the illustrated example, the shape of the laminate 10 is trapezoidal. The top surface of the laminate 10 is smaller than the bottom surface of the laminate 10. The sides of the laminate 10 are inclined with respect to the bottom surface of the laminate 10. In the illustrated example, the bottom surface of the laminate 10 is parallel to the XY plane. The diameter of the laminate 10 increases in the direction of the -Z axis.

[0015] Furthermore, the "diameter of the laminate 10" refers to the diameter if the planar shape of the laminate 10 is a circle, and the diameter of the smallest inclusion circle if the planar shape of the laminate 10 is not a circle. For example, if the planar shape of the laminate 10 is a polygon, the diameter of the smallest circle that contains the polygon is the diameter of the smallest circle that contains the polygon is the diameter of the ellipse. If the planar shape of the laminate 10 is an ellipse, the diameter of the smallest circle that contains the ellipse is the diameter of the ellipse. The same applies to the "diameter of the columnar portion 202" shown below.

[0016] The laminate 10 includes a first semiconductor layer 12, an emissive layer 14, and a second semiconductor layer 16.

[0017] The first semiconductor layer 12 is provided on the first electrode 20. The first semiconductor layer 12 is provided between the first electrode 20 and the light-emitting layer 14. The first semiconductor layer 12 is provided between the first electrode 20 and the second electrode 30. The first semiconductor layer 12 has a side surface 13. The side surface 13 is inclined with respect to the lower surface of the laminate 10. The side surface 13 constitutes the side surface of the laminate 10.

[0018] In this specification, when referring to the stacking direction of the laminate 10 (hereinafter also simply as the "stacking direction"), with respect to the light-emitting layer 14, the direction from the light-emitting layer 14 toward the second semiconductor layer 16 is described as "up," and the direction from the light-emitting layer 14 toward the first semiconductor layer 12 is described as "down." The direction perpendicular to the stacking direction is also called the "in-plane direction." The "stacking direction of the laminate 10" refers to the stacking direction of the first semiconductor layer 12 and the light-emitting layer 14. In the illustrated example, the stacking direction is the Z-axis direction. The direction from the light-emitting layer 14 toward the first semiconductor layer 12 is also called the "first direction." In the illustrated example, the first direction is the -Z-axis direction.

[0019] The thickness of the first semiconductor layer 12 is, for example, 3 μm to 20 μm, preferably 5 μm to 10 μm. In the illustrated example, the thickness of the first semiconductor layer 12 is greater than the thickness of the light-emitting layer 14 and the thickness of the second semiconductor layer 16. The first semiconductor layer 12 is a semiconductor layer having a first conductivity type. The first semiconductor layer 12 is, for example, a Si-doped n-type GaN layer.

[0020] Although not shown in the diagram, the first semiconductor layer 12 may have a strain relaxation layer in contact with the first electrode 20. The strain relaxation layer is, for example, an AlN layer. The lattice constant of the strain relaxation layer is a value between the lattice constant of the GaN layer and the lattice constant of the first substrate 5, which will be described later. The strain relaxation layer may have, for example, an SLS (Strained Layer Superlattice) in which GaN layers and AlN layers are alternately stacked. The strain relaxation layer can reduce crystal defects in the GaN layer of the first semiconductor layer 12. This can improve the luminescence efficiency.

[0021] The light-emitting layer 14 is provided on the first semiconductor layer 12. The light-emitting layer 14 is provided between the first semiconductor layer 12 and the second semiconductor layer 16. The light-emitting layer 14 has a side surface 15. The side surface 15 is continuous with the side surface 13 of the first semiconductor layer 12. The side surface 15 constitutes the side surface of the laminate 10.

[0022] The light-emitting layer 14 generates light when an electric current is injected. The light-emitting layer 14 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The light-emitting layer 14 has an MQW (Multiple Quantum Well) structure composed of the well layer and the barrier layer.

[0023] The number of well layers and barrier layers constituting the light-emitting layer 14 is not particularly limited. For example, there may be only one well layer, in which case the light-emitting layer 14 has an SQW (Single Quantum Well) structure.

[0024] The second semiconductor layer 16 is provided on the light-emitting layer 14. The second semiconductor layer 16 is provided between the light-emitting layer 14 and the second electrode 30. The second semiconductor layer 16 is provided between the first semiconductor layer 12 and the second electrode 30. The second semiconductor layer 16 has a side surface 17. The side surface 17 is continuous with the side surface 15 of the light-emitting layer 14. The side surface 17 constitutes the side surface of the laminate 10. The second semiconductor layer 16 is a semiconductor layer having a second conductivity type different from the first conductivity type. The second semiconductor layer 16 is, for example, a p-type GaN layer doped with Mg.

[0025] In the light-emitting device 100, a PIN diode is formed by a p-type second semiconductor layer 16, an i-type light-emitting layer 14 that is not intentionally doped with impurities, and an n-type first semiconductor layer 12. In the light-emitting device 100, when a forward bias voltage of the PIN diode is applied between the first electrode 20 and the second electrode 30, current is injected into the light-emitting layer 14, causing recombination of electrons and holes in the light-emitting layer 14. This recombination generates light.

[0026] The first electrode 20 is provided beneath the first semiconductor layer 12. The first electrode 20 has a contact surface 22 with the first semiconductor layer 12. The contact surface 22 is the upper surface of the first electrode 20. The contact surface 22 is the +Z axis end of the first electrode 20. Here, Figure 2 is a schematic plane showing the contact surface 22, the first semiconductor layer 12, and the light-emitting layer 14.

[0027] As shown in Figure 2, the contact surface 22 of the first electrode 20 is located inside the outer edge 2 of the first semiconductor layer 12 when viewed from the -Z axis direction. The contact surface 22 is not located outside the outer edge 2. The contact surface 22 is located inside the outer edge 4 of the light-emitting layer 14 when viewed from the -Z axis direction. The contact surface 22 is not located outside the outer edge 4. The contact surface 22 is spaced apart from the outer edges 2 and 4. When viewed from the -Z axis direction, the area of ​​the contact surface 22 is smaller than the area of ​​the first semiconductor layer 12 and the area of ​​the light-emitting layer 14. The area of ​​the light-emitting layer 14 is smaller than the area of ​​the first semiconductor layer 12. The outer edge 4 is located inside the outer edge 2. In the illustrated example, the planar shapes of the contact surface 22, the first semiconductor layer 12, and the light-emitting layer 14 are circular.

[0028] The first electrode 20 is one of the electrodes for injecting current into the light-emitting layer 14. The first semiconductor layer 12 may be in ohmic contact with the first electrode 20. The first electrode 20 is a transparent electrode made of, for example, ITO (Indium Tin Oxide), ZnO, etc. Light generated in the light-emitting layer 14 passes through the first electrode 20 and is emitted from the side of the first electrode 20.

[0029] As shown in Figure 1, the second electrode 30 is provided on the second semiconductor layer 16. Furthermore, the second electrode 30 is provided on the first insulating layer 40. The second electrode 30 is provided between the second semiconductor layer 16 and the wiring substrate 90. In the illustrated example, the second electrode 30 is in contact with the second semiconductor layer 16.

[0030] The second electrode 30 is the other electrode for injecting current into the light-emitting layer 14. The second semiconductor layer 16 may be in ohmic contact with the second electrode 30. The second electrode 30 is made of, for example, a metal. As the second electrode 30, for example, a layer stacked in the order of Ni layer and Au layer from the second semiconductor layer 16 side may be used. The second electrode 30 reflects the light generated in the light-emitting layer 14 toward the first electrode 20 side.

[0031] The first insulating layer 40 is provided along the side surface 13 of the first semiconductor layer 12. In the illustrated example, the first insulating layer 40 is further provided on the side surface 15 of the light-emitting layer 14, the side surface 17 of the second semiconductor layer 16, and the upper surface of the second semiconductor layer 16. The first insulating layer 40 covers, for example, the entire side surface of the laminate 10. When viewed from the -Z axis direction, the first insulating layer 40 surrounds, for example, the laminate 10. The first insulating layer 40 is, for example, an aluminum oxide (Al2O3) layer or a silicon oxide (SiO2) layer.

[0032] The first insulating layer 40 has a side surface 41. In the illustrated example, the side surface 41 is inclined with respect to the lower surface of the laminate 10. The side surface 41 is parallel to, for example, the side surface 13 of the first semiconductor layer 12.

[0033] The first insulating layer 40 is provided with a contact hole 42. In the illustrated example, the bottom surface of the contact hole 42 is defined by the second semiconductor layer 16. The contact hole 42 is provided with a second electrode 30.

[0034] The metal layer 50 is provided on the side surface 41 of the first insulating layer 40. The metal layer 50 is in contact with the side surface 41 of the first insulating layer 40. When viewed from the -Z axis direction, the metal layer 50 surrounds the first insulating layer 40, for example.

[0035] The metal layer 50 is connected, for example, to the second electrode 30. The metal layer 50 is provided integrally with the second electrode 30, for example. This allows the second electrode 30 and the metal layer 50 to be formed in the same process. Therefore, the manufacturing process can be shortened compared to when the second electrode and the metal layer are formed in separate processes.

[0036] The metal layer 50 has a first end 51 in the -Z axis direction. The first end 51 is the end of the metal layer 50 that is furthest in the -Z axis direction. In the illustrated example, the first end 51 is the end of the metal layer 50 on the first electrode 20 side. The first semiconductor layer 12 has a second end 11 in the -Z axis direction. The second end 11 is the end of the first semiconductor layer 12 that is furthest in the -Z axis direction. In the illustrated example, the second end 11 is the end of the first semiconductor layer 12 on the first electrode 20 side.

[0037] The position of the first end 51 of the metal layer 50 is the same as the position of the second end 11 of the first semiconductor layer 12 in the -Z axis direction. In the stacking direction, the position of the first end 51 is the same as the position of the second end 11. In the illustrated example, the first end 51 is in contact with the second insulating layer 60. The second end 11 is the lower surface of the first semiconductor layer 12. The second end 11 is in contact with the first electrode 20 and the second insulating layer 60.

[0038] The metal layer 50 is made of metal. The material of the metal layer 50 is, for example, the same as that of the second electrode 30. The metal layer 50 reflects the light generated in the light-emitting layer 14. By reflecting the light generated in the light-emitting layer 14 with the metal layer 50 and the second electrode 30, the light generated in the light-emitting layer 14 is emitted from the first electrode 20 side. The laminate 10, the first electrode 20, the second electrode 30, the first insulating layer 40, and the metal layer 50 constitute the light-emitting element 102. The metal layer 50 is provided along the side surface 13 of the first semiconductor layer 12. The inclination angle of the side surface 13 of the first semiconductor layer 12 with respect to the bottom surface of the laminate 10 is not particularly limited, as long as the light reflected by the metal layer 50 is emitted from the first electrode 20 side.

[0039] The second insulating layer 60 is provided on the first electrode 20. The second insulating layer 60 is provided between the first electrode 20 and the first semiconductor layer 12. When viewed from the -Z axis direction, the second insulating layer 60 surrounds, for example, the contact surface 22 of the first electrode 20. The second insulating layer 60 is, for example, a silicon oxide layer.

[0040] The second insulating layer 60 is provided with a contact hole 62. In the illustrated example, the bottom surface of the contact hole 62 is defined by the first semiconductor layer 12. The contact hole 62 is provided with a first electrode 20.

[0041] The third insulating layer 70 is provided on the second insulating layer 60. The third insulating layer 70 is provided between the second insulating layer 60 and the wiring board 90. In the illustrated example, the third insulating layer 70 is separated from the wiring board 90. When viewed from the -Z axis direction, the third insulating layer 70 surrounds, for example, the light-emitting element 102. The metal layer 50 is provided between the first insulating layer 40 and the third insulating layer 70. In the illustrated example, the third insulating layer 70 is in contact with the metal layer 50.

[0042] The material of the third insulating layer 70 is, for example, a silicon oxide layer. For example, even if there is light generated in the light-emitting layer 14 that passes through the metal layer 50, the light can be reflected back to the laminate 10 side at the interface between the third insulating layer 70 and the metal layer 50.

[0043] The structure 80 is provided on the second insulating layer 60. The structure 80 is provided between the second insulating layer 60 and the wiring board 90. The structure 80 is separated from the laminate 10. When viewed from the -Z axis direction, the structure 80 surrounds the laminate 10, for example. The third insulating layer 70 is provided between the structure 80 and the laminate 10.

[0044] The structure 80 includes, for example, a third semiconductor layer 82, an MQW layer 84, a fourth semiconductor layer 86, a fourth insulating layer 88, and a metal layer 89.

[0045] The third semiconductor layer 82 is provided on the second insulating layer 60. The third semiconductor layer 82 is provided between the second insulating layer 60 and the MQW layer 84. The third semiconductor layer 82 is separated from the first electrode 20. The third semiconductor layer 82 is not electrically connected to the first electrode 20. The material of the third semiconductor layer 82 is the same as that of the first semiconductor layer 12.

[0046] The MQW layer 84 is provided on the third semiconductor layer 82. The MQW layer 84 is provided between the third semiconductor layer 82 and the fourth semiconductor layer 86. The MQW layer 84 has the same MQW structure as the light-emitting layer 14. The material of the MQW layer 84 is the same as that of the light-emitting layer 14. Since the third semiconductor layer 82 is not electrically connected to the first electrode 20 and the fourth semiconductor layer 86 is not electrically connected to the second electrode 30, no current is injected into the MQW layer 84. Therefore, the MQW layer 84 does not emit light.

[0047] The fourth semiconductor layer 86 is provided on the MQW layer 84. The fourth semiconductor layer 86 is provided between the MQW layer 84 and the fourth insulating layer 88. The fourth semiconductor layer 86 is separated from the second electrode 30. The fourth semiconductor layer 86 is not electrically connected to the second electrode 30. The material of the fourth semiconductor layer 86 is the same as that of the second semiconductor layer 16.

[0048] The fourth insulating layer 88 is provided on the upper surface of the fourth semiconductor layer 86, the side surface of the fourth semiconductor layer 86, the side surface of the MQW layer 84, and the side surface of the third semiconductor layer 82. In the illustrated example, the fourth insulating layer 88 is in contact with the second insulating layer 60. The material of the fourth insulating layer 88 is the same as that of the first insulating layer 40.

[0049] The metal layer 89 is provided on the upper and side surfaces of the fourth insulating layer 88. In the illustrated example, the metal layer 89 is in contact with the second insulating layer 60. The material of the metal layer 89 is the same as that of the metal layer 50.

[0050] The wiring board 90 is provided on the second electrode 30. In the illustrated example, the wiring board 90 is further provided on a metal layer 89. The wiring board 90 is equipped with a drive circuit for driving the light-emitting element 102. The drive circuit is composed of, for example, a TFT (Thin Film Transistor) and a CMOS (Complementary Metal Oxide Semiconductor).

[0051] The light-emitting device 100 has, for example, the following effects:

[0052] The light-emitting device 100 includes a first electrode 20 and a second electrode 30, a first semiconductor layer 12 provided between the first electrode 20 and the second electrode 30 and having a first conductivity type, a second semiconductor layer 16 provided between the first semiconductor layer 12 and the second electrode 30 and having a second conductivity type different from the first conductivity type, a light-emitting layer 14 provided between the first semiconductor layer 12 and the second semiconductor layer 16, a first insulating layer 40 provided along the side surface 13 of the first semiconductor layer 12, and a metal layer 50 in contact with the first insulating layer 40 and provided along the side surface 13 of the first semiconductor layer 12, which reflects the light generated in the light-emitting layer 14. The light generated in the light-emitting layer 14 is emitted from the side of the first electrode 20. The metal layer 50 has a first end 51 in the -Z axis direction, which is the first direction from the light-emitting layer 14 toward the first semiconductor layer 12, and the first semiconductor layer 12 has a second end 11 in the -Z axis direction, and in the -Z axis direction, the position of the first end 51 is the same as the position of the second end 11.

[0053] Therefore, the light-emitting device 100 can be made smaller compared to the case where the metal layer is separated from the first insulating layer. Consequently, the light-emitting devices 100 can be arranged at a high density, and the pixel density can be increased.

[0054] Furthermore, in the light-emitting device 100, since the metal layer 50 is in contact with the first insulating layer 40 provided on the side surface 13 of the first semiconductor layer 12, the metal layer 50 can be positioned more precisely relative to the laminate 10 compared to the case where the metal layer is separated from the first insulating layer.

[0055] Furthermore, in the light-emitting device 100, the amount of light emitted from the side of the laminate 10 can be reduced compared to the case where the first edge of the metal layer is positioned in the +Z axis direction relative to the second edge of the first semiconductor layer. As a result, light can be efficiently emitted from the first electrode 20 side.

[0056] In the light-emitting device 100, the contact surface 22 of the first electrode 20 with the first semiconductor layer 12 is located inside the outer edge 2 of the first semiconductor layer 12 when viewed from the -Z axis direction. Therefore, in the light-emitting device 100, the current flowing through the side surface of the first semiconductor layer 12 can be reduced compared to, for example, when the contact surface is in contact with the outer edge of the first semiconductor layer. This improves the current injection efficiency. The side surface of the first semiconductor layer 12 is damaged by etching, making it difficult for current to flow.

[0057] In the light-emitting device 100, the contact surface 22 is located inside the outer edge 4 of the light-emitting layer 14 when viewed from the -Z axis direction. Therefore, in the light-emitting device 100, the current flowing through the side surface of the first semiconductor layer 12 can be reduced compared to, for example, the case where the contact surface is in contact with the outer edge of the light-emitting layer.

[0058] In the light-emitting device 100, the first insulating layer 40 is further provided on the side surface 15 of the light-emitting layer 14 and the side surface 17 of the second semiconductor layer 16, and the metal layer 50 is connected to the second electrode 30. Therefore, in the light-emitting device 100, for example, light emitted by the light-emitting layer 14 that has passed through the side surface 17 of the second semiconductor layer 16 can be reflected by the metal layer 50.

[0059] 1.2. Method for manufacturing a light-emitting device Next, the manufacturing method of the light-emitting device 100 according to the first embodiment will be described with reference to the drawings. Figures 3 to 15 are schematic cross-sectional views showing the manufacturing process of the light-emitting device 100 according to the first embodiment.

[0060] As shown in Figure 3, a laminate 10a is formed on a first substrate 5 by epitaxial growth of a semiconductor layer 12a, an MQW layer 14a, and a semiconductor layer 16a in that order. Examples of epitaxial growth methods include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy). The first substrate 5 can be, for example, a sapphire substrate, a Si substrate, a GaN substrate, or a SiC substrate. The semiconductor layer 12a may also be grown using the ELO (Epitaxial Lateral Overgrowth) method. This allows for the formation of a semiconductor layer 12a with fewer crystal defects.

[0061] As shown in Figure 4, the laminate 10a is patterned from the semiconductor layer 16a side to form the opening 6. Patterning is performed, for example, by photolithography and etching. Etching may be performed by dry etching only, or by a combination of dry etching and wet etching. The opening 6 penetrates the semiconductor layer 16a and the MQW layer 14a. In the illustrated example, the opening 6 does not penetrate the semiconductor layer 12a. Through this process, an emissive layer 14 and an MQW layer 84 made of the MQW layer 14a can be formed. Furthermore, a second semiconductor layer 16 and a fourth semiconductor layer 86 made of the semiconductor layer 16a can be formed.

[0062] As shown in Figure 5, an insulating layer 40a is formed on the upper surface of the laminate 10a and on the side surface of the laminate 10a that defines the opening 6. The insulating layer 40a is formed, for example, by the ALD (Atomic Layer Deposition) method or the CVD (Chemical Vapor Deposition) method.

[0063] As shown in Figure 6, the insulating layer 40a is patterned to form contact holes 42. The patterning is performed, for example, by photolithography and etching. This process exposes the second semiconductor layer 16.

[0064] As shown in Figure 7, a metal layer 50a is formed on the upper surface of the second semiconductor layer 16, the upper surface of the insulating layer 40a, and the side surface of the insulating layer 40a. The metal layer 50a is formed, for example, by vacuum deposition. Through this process, a second electrode 30 consisting of the metal layer 50a can be formed on the second semiconductor layer 16.

[0065] As shown in Figure 8, a third insulating layer 70 is formed on the metal layer 50a and in the opening 6. The third insulating layer 70 is formed to fill the opening 6. The third insulating layer 70 is formed, for example, by spin coating, CVD, or ALD.

[0066] As shown in Figure 9, the portion of the third insulating layer 70 provided on the metal layer 50a is removed. The removal of the third insulating layer 70 is carried out so that the third insulating layer 70 remains in the opening 6. The removal of the third insulating layer 70 is carried out, for example, by CMP (Chemical Mechanical Polishing).

[0067] As shown in Figure 10, the second substrate 7 is attached to the metal layer 50a. Next, the first substrate 5 is removed. The removal of the first substrate 5 is performed, for example, by laser lift-off. The second substrate 7 is, for example, a glass substrate. The second substrate 7 functions as a support substrate when removing the first substrate 5.

[0068] As shown in Figure 11, a portion of the semiconductor layer 12a, a portion of the insulating layer 40a, a portion of the metal layer 50a, and a portion of the third insulating layer 70 are removed. The removal of the semiconductor layer 12a, insulating layer 40a, metal layer 50a, and third insulating layer 70 is performed, for example, by CMP. Through this process, a first semiconductor layer 12 and a third semiconductor layer 82 made of the semiconductor layer 12a can be formed. Furthermore, a first insulating layer 40 and a fourth insulating layer 88 made of the insulating layer 40a can be formed. Furthermore, a metal layer 50 and a metal layer 89 made of the metal layer 50a can be formed. Furthermore, a laminate 10 having the first semiconductor layer 12, an emissive layer 14, and a second semiconductor layer 16 can be formed. The laminate 10 consists of a laminate 10a. Furthermore, a structure 80 having the third semiconductor layer 82, an MQW layer 84, a fourth semiconductor layer 86, a fourth insulating layer 88, and a metal layer 89 can be formed.

[0069] As shown in Figure 12, a second insulating layer 60 is formed below the first semiconductor layer 12, below the third insulating layer 70, and below the third semiconductor layer 82. The second insulating layer 60 is formed, for example, by CVD or ALD.

[0070] As shown in Figure 13, the second insulating layer 60 is patterned to form contact holes 62. Patterning is performed, for example, by photolithography and etching. This process exposes the first semiconductor layer 12.

[0071] As shown in Figure 14, a first electrode 20 is formed beneath the first semiconductor layer 12 and the second insulating layer 60. The first electrode 20 is formed, for example, by vacuum deposition. This process allows for the formation of a light-emitting element 102.

[0072] As shown in Figure 15, the third substrate 8 is attached beneath the first electrode 20. Next, the second substrate 7 is peeled off from the metal layers 50 and 89. The third substrate 8 is, for example, a glass substrate. The third substrate 8 functions as a support substrate when peeling off the second substrate 7.

[0073] As shown in Figure 1, the wiring board 90 is bonded to the metal layer 50. Next, the third substrate 8 is peeled off from the first electrode 20.

[0074] The light-emitting device 100 can be manufactured through the above process.

[0075] 1.3. Modified Examples of Light-Emitting Devices 1.3.1. First Variation Next, a light-emitting device according to a first modified example of the first embodiment will be described with reference to the drawings. Figure 16 is a schematic cross-sectional view showing a light-emitting device 110 according to a first modified example of the first embodiment.

[0076] In the following description of the first modified light-emitting device 110 according to the first embodiment, components having the same function as the components of the light-emitting device 100 according to the first embodiment described above are denoted by the same reference numerals, and their detailed descriptions are omitted. The same applies to the second and third modified light-emitting devices according to the first embodiment described later.

[0077] In the light-emitting device 100 described above, as shown in Figure 1, the position of the first end 51 of the metal layer 50 in the -Z axis direction was the same as the position of the second end 11 of the first semiconductor layer 12.

[0078] In contrast, in the light-emitting device 110, as shown in Figure 16, the position of the first end 51 of the metal layer 50 is on the -Z axis side than the position of the second end 11 of the first semiconductor layer 12.

[0079] The second insulating layer 60 includes, for example, a first layer 64 provided on the first electrode 20, and a second layer 66 and a third layer 68 provided on the first layer 64. The second layer 66 is provided between the first layer 64 and the first semiconductor layer 12. When viewed from the -Z axis direction, the second layer 66 surrounds, for example, the contact surface 22 of the first electrode 20. The material of the second layer 66 may be the same as or different from that of the first layer 64. The third layer 68 is provided between the first layer 64 and the third semiconductor layer 82. The material of the third layer 68 is, for example, the same as that of the second layer 66.

[0080] The metal layer 50 is provided between the first layer 64 and the second layer 66. The first end 51 of the metal layer 50 is in contact with the first layer 64. The metal layer 89 is provided between the first layer 64 and the third layer 68.

[0081] In the light-emitting device 110, the position of the first end 51 of the metal layer 50 is on the -Z axis side than the position of the second end 11 of the first semiconductor layer 12. Therefore, in the light-emitting device 110, the number of reflections of light generated in the light-emitting layer 14 by the metal layer 50 can be increased compared to, for example, the case where the position of the first end is the same as the position of the second end in the -Z axis direction.

[0082] 1.3.2. Second Variation Next, a light-emitting device according to a second modified example of the first embodiment will be described with reference to the drawings. Figure 17 is a schematic cross-sectional view showing a light-emitting device 120 according to a second modified example of the first embodiment.

[0083] In the light-emitting device 100 described above, as shown in Figure 1, only one light-emitting element 102 was provided.

[0084] In contrast, the light-emitting device 120 has multiple light-emitting elements 102, as shown in Figure 17. In the illustrated example, there are three light-emitting elements 102. The number of light-emitting elements 102 is not particularly limited, as long as there are multiple elements. In the illustrated example, the first electrode 20 is a common electrode among the multiple light-emitting elements 102. The multiple light-emitting elements 102 may be arranged in a matrix in the X-axis and Y-axis directions. The light-emitting device 120 is configured so that the multiple light-emitting elements 102 can be turned on and off individually.

[0085] In the light-emitting device 120, multiple light-emitting elements 102 are provided. Therefore, the light-emitting device 120 can achieve higher output compared to, for example, a device with only one light-emitting element.

[0086] 1.3.3. Third Variation Next, a light-emitting device according to a third modified example of the first embodiment will be described with reference to the drawings. Figure 18 is a schematic cross-sectional view showing a light-emitting device 130 according to a third modified example of the first embodiment.

[0087] In the light-emitting device 130, as shown in Figure 18, the diameter of the laminate 10 is smaller than the diameter of the light-emitting device 100 described above.

[0088] In the light-emitting device 130, the ratio of the diameter of the laminate 10 to the size of the laminate 10 in the stacking direction is smaller than that of the light-emitting device 100. This ratio is, for example, 0.2 or more and 0.5 or less. If this ratio is 0.5 or less, for example, when multiple light-emitting elements 102 are provided as shown in Figure 17, the light-emitting elements 102 can be arranged at a high density.

[0089] In the light-emitting device 130, for example, the number of reflections of light generated in the light-emitting layer 14 by the metal layer 50 increases compared to the light-emitting device 100. Therefore, in the light-emitting device 130, it is particularly desirable that the position of the first end 51 in the -Z axis direction is the same as the position of the second end 11, or that the first end 51 is located further in the -Z axis direction than the second end 11.

[0090] 2. Second Embodiment 2.1. Light-emitting device Next, the light-emitting device according to the second embodiment will be described with reference to the drawings. Figure 19 is a schematic cross-sectional view showing the light-emitting device 200 according to the second embodiment.

[0091] Hereinafter, in the light-emitting device 200 according to the second embodiment, components having the same function as the components of the light-emitting device 100 according to the first embodiment described above will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0092] As shown in Figure 19, the light-emitting device 200 differs from the light-emitting device 100 described above in that the laminated body 10 has a plurality of columnar portions 202.

[0093] The columnar portion 202 is also called, for example, a nanocolumn, nanowire, nanorod, or nanopillar. The planar shape of the columnar portion 202 is, for example, a polygon such as a regular hexagon or a circle. The diameter of the columnar portion 202 is, for example, between 50 nm and 500 nm. By setting the diameter of the columnar portion 202 to 500 nm or less, a high-quality crystalline light-emitting layer 14 can be obtained, and the strain inherent in the light-emitting layer 14 can be reduced. As a result, the light generated in the light-emitting layer 14 can be amplified with high efficiency.

[0094] Multiple columnar portions 202 are spaced apart from each other. In the illustrated example, there is a gap between adjacent columnar portions 202. Although not shown in the illustration, a light propagation layer may be provided between adjacent columnar portions 202 to propagate the light generated in the light-emitting layer 14 in the in-plane direction. The spacing between adjacent columnar portions 202 is, for example, 1 nm to 500 nm. Multiple columnar portions 202 are arranged in a predetermined direction at a predetermined pitch when viewed from the -Z axis direction. Multiple columnar portions 202 are arranged, for example, in a triangular lattice or a square lattice. Multiple columnar portions 202 can exhibit the effect of a photonic crystal.

[0095] The "pitch of the columnar parts 202" refers to the distance between the centers of adjacent columnar parts 202 in a predetermined direction. The "center of the columnar part 202" refers to the center of the circle if the planar shape of the columnar part 202 is a circle, and to the center of the smallest inclusion circle if the planar shape of the columnar part 202 is not a circle. For example, if the planar shape of the columnar part 202 is a polygon, the center of the smallest circle that contains the polygon is the center of the polygon, and if the planar shape of the columnar part 202 is an ellipse, the center of the smallest circle that contains the ellipse is the center of the ellipse.

[0096] The light-emitting layer 14 and the second semiconductor layer 16 constitute a plurality of columnar portions 202. In the illustrated example, the first semiconductor layer 12, the light-emitting layer 14, and the second semiconductor layer 16 constitute a plurality of columnar portions 202. The third semiconductor layer 82, the MQW layer 84, and the fourth semiconductor layer 86 constitute, for example, a plurality of columnar portions 204.

[0097] In the light-emitting device 200, the light generated in the light-emitting layer 14 propagates in the in-plane direction, forming a standing wave due to the photonic crystal effect of the multiple columnar portions 202, and receiving gain in the light-emitting layer 14, causing laser oscillation. The light-emitting device 200 then emits laser light. The light-emitting device 200 is a semiconductor laser.

[0098] In the light-emitting device 200, the laminate 10 has a plurality of columnar portions 202, and the light-emitting layer 14 and the second semiconductor layer 16 constitute a plurality of columnar portions 202. Therefore, the light-emitting device 200 can emit laser light.

[0099] 2.2. Method for manufacturing a light-emitting device Next, a method for manufacturing the light-emitting device 200 according to the second embodiment will be described.

[0100] In the manufacturing method of the light-emitting device 200, the columnar parts 202 and 204 are formed by epitaxial growth using a mask layer (not shown) as a mask. Examples of epitaxial growth methods include MOCVD and MBE.

[0101] Aside from the points mentioned above, the manufacturing method of the light-emitting device 200 is basically the same as the manufacturing method of the light-emitting device 100 described above. Therefore, a detailed explanation is omitted.

[0102] 2.3. Variant examples of light-emitting devices Next, a modified light-emitting device 210 according to the second embodiment will be described with reference to the drawings. Figure 20 is a schematic cross-sectional view showing a modified light-emitting device 210 according to the second embodiment.

[0103] In the following description of the light-emitting device 210 according to a modified example of the second embodiment, components having the same function as the components of the light-emitting device 200 according to the second embodiment described above are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0104] In the light-emitting device 200 described above, the wiring board 90 was bonded to the second electrode 30, as shown in Figure 19.

[0105] In contrast, in the light-emitting device 210, as shown in Figure 20, the wiring board 90 is bonded to the first electrode 20. The wiring board 90 is configured to transmit light generated in the light-emitting layer 14. The metal layer 50 and the metal layer 89 are connected by the metal layer 212. The material of the metal layer 212 is, for example, the same as that of the metal layer 50. The metal layers 50, 89, and 212 are provided integrally. The metal layer 212 is formed in the same process as the metal layer 50. The third insulating layer 70 is provided on the second electrode 30 and the metal layer 89.

[0106] In the light-emitting device 210, the wiring board 90 is bonded to the first electrode 20, and the wiring board 90 is configured to transmit light generated in the light-emitting layer 14. Therefore, in the light-emitting device 210, light generated in the light-emitting layer 14 can be transmitted through the wiring board 90 and emitted.

[0107] 3. Third Embodiment 3.1. Light-emitting device Next, the light-emitting device according to the third embodiment will be described with reference to the drawings. Figure 21 is a schematic cross-sectional view showing the light-emitting device 300 according to the third embodiment.

[0108] Hereinafter, in the light-emitting device 300 according to the third embodiment, components having the same function as the components of the light-emitting device 100 according to the first embodiment described above will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0109] The light-emitting device 300 differs from the light-emitting device 100 described above in that, as shown in Figure 21, an opening 302 is provided in the first semiconductor layer 12.

[0110] The opening 302 is defined by the first semiconductor layer 12. The opening 302 does not reach the light-emitting layer 14. In the illustrated example, the shape of the first semiconductor layer 12 defining the opening 302 is arc-shaped, specifically semi-circular. The depth of the opening 302 is, for example, greater than half the size of the first semiconductor layer 12 in the stacking direction. The interior of the opening 302 is, for example, a cavity. The width of the opening 302 is greater than the width of the contact hole 62.

[0111] In the light-emitting device 300, an opening 302 is provided in the first semiconductor layer 12, and the inside of the opening 302 is hollow. Therefore, in the light-emitting device 300, compared to a case where no opening is provided in the first semiconductor layer, the amount of light generated in the light-emitting layer 14 that is absorbed by the first semiconductor layer 12 can be reduced. In particular, when the light generated in the light-emitting layer 14 is ultraviolet light, the light is easily absorbed in the first semiconductor layer 12, so it is desirable to provide an opening 302.

[0112] 3.2. Method for manufacturing a light-emitting device Next, the manufacturing method of the light-emitting device 300 according to the third embodiment will be described with reference to the drawings. Figures 22 to 26 are schematic cross-sectional views showing the manufacturing process of the light-emitting device 300 according to the third embodiment.

[0113] As shown in Figure 11, the manufacturing method of the light-emitting device 300 is basically the same as the manufacturing method of the light-emitting device 100 described above, up to the step of forming a laminate 10 having a first semiconductor layer 12, a light-emitting layer 14, and a second semiconductor layer 16, and a structure 80 having a third semiconductor layer 82, an MQW layer 84, a fourth semiconductor layer 86, a fourth insulating layer 88, and a metal layer 89.

[0114] In the manufacturing method of the light-emitting device 300, after forming the laminate 10 and the structure 80, a resist layer 9 of a predetermined shape is formed below the first semiconductor layer 12, below the third insulating layer 70, and below the third semiconductor layer 82, as shown in Figure 22. The resist layer 9 is formed, for example, by coating using a spin coating method and patterning by photolithography.

[0115] As shown in Figure 23, the first semiconductor layer 12 is etched using the resist layer 9 as a mask to form an opening 302. Etching is performed, for example, by wet etching. Wet etching etches the first semiconductor layer 12 isotropically.

[0116] As shown in Figure 24, after peeling off the resist layer 9, a second insulating layer 60 is formed under the first semiconductor layer 12, under the third insulating layer 70, and under the third semiconductor layer 82. The method for forming the second insulating layer 60 is as described above.

[0117] As shown in Figure 25, the second insulating layer 60 is patterned to form contact holes 62. The patterning method is as described above.

[0118] As shown in Figure 26, the first electrode 20 is formed below the first semiconductor layer 12 and below the second insulating layer 60. The method for forming the first electrode 20 is as described above.

[0119] As shown in Figure 21, after attaching the substrate to the first electrode 20, the second substrate 7 is removed, and the wiring board 90 is bonded to the second electrode 30. Then, the substrate attached to the first electrode 20 is removed.

[0120] The light-emitting device 300 can be manufactured through the above process.

[0121] 4. Fourth Embodiment Next, the projector according to the fourth embodiment will be described with reference to the drawings. Figure 27 is a schematic diagram showing the projector 700 according to the fourth embodiment.

[0122] The projector 700 has, for example, a light-emitting device 120 as a light source.

[0123] The projector 700 includes a housing (not shown) and red light source 120R, green light source 120G, and blue light source 120B located inside the housing, which emit red light, green light, and blue light, respectively. For convenience, the red light source 120R, green light source 120G, and blue light source 120B are shown in a simplified form in Figure 27.

[0124] The projector 700 further includes a first optical element 702R, a second optical element 702G, a third optical element 702B, a first optical modulator 704R, a second optical modulator 704G, a third optical modulator 704B, and a projection device 708, all of which are located within the housing. The first optical modulator 704R, the second optical modulator 704G, and the third optical modulator 704B are, for example, transmissive liquid crystal light bulbs. The projection device 708 is, for example, a projection lens.

[0125] Light emitted from the red light source 120R is incident on the first optical element 702R. The light emitted from the red light source 120R is focused by the first optical element 702R. Note that the first optical element 702R may have functions other than focusing. The same applies to the second optical element 702G and the third optical element 702B, which will be described later.

[0126] Light focused by the first optical element 702R is incident on the first optical modulator 704R. The first optical modulator 704R modulates the incident light according to the image information. The projection device 708 then magnifies the image formed by the first optical modulator 704R and projects it onto the screen 710.

[0127] Light emitted from the green light source 120G enters the second optical element 702G. The light emitted from the green light source 120G is focused by the second optical element 702G.

[0128] The light focused by the second optical element 702G is incident on the second optical modulator 704G. The second optical modulator 704G modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the second optical modulator 704G and projects it onto the screen 710.

[0129] Light emitted from the blue light source 120B enters the third optical element 702B. The light emitted from the blue light source 120B is focused by the third optical element 702B.

[0130] The light focused by the third optical element 702B is incident on the third optical modulator 704B. The third optical modulator 704B modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the third optical modulator 704B and projects it onto the screen 710.

[0131] The projector 700 further includes a cross dichroic prism 706 that combines the light emitted from the first light modulator 704R, the second light modulator 704G, and the third light modulator 704B and directs it to the projection device 708.

[0132] Three colored lights modulated by the first light modulator 704R, the second light modulator 704G, and the third light modulator 704B are incident on the cross dichroic prism 706. The cross dichroic prism 706 is formed by bonding together four right-angle prisms, and its inner surface is arranged with a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light. The three colored lights are combined by these dielectric multilayer films to form light that represents a color image. The combined light is then projected onto the screen 710 by the projection device 708, and an enlarged image is displayed.

[0133] Furthermore, the red light source 120R, the green light source 120G, and the blue light source 120B may directly form an image without using the first optical modulator 704R, the second optical modulator 704G, and the third optical modulator 704B by controlling the light-emitting device 100 as pixels of the image according to the image information. The projection device 708 may then enlarge the image formed by the red light source 120R, the green light source 120G, and the blue light source 120B and project it onto the screen 710.

[0134] Furthermore, while a transmissive liquid crystal light bulb was used as the light modulation device in the above example, other types of light bulbs may be used, as well as reflective light bulbs. Examples of such light bulbs include reflective liquid crystal light bulbs and digital micro mirror devices. The configuration of the projection device will also be appropriately modified depending on the type of light bulb used.

[0135] Furthermore, this can also be applied to the light source device of a scanning type image display device, which has a scanning means that displays an image of a desired size on a display surface by scanning the light from the light source across a screen.

[0136] 5. Fifth Embodiment Next, the display according to the fifth embodiment will be described with reference to the drawings. Figure 28 is a schematic plan view showing the display 800 according to the fifth embodiment. Figure 29 is a schematic cross-sectional view showing the display 800 according to the fifth embodiment. In Figure 28, the X-axis and Y-axis are shown as two mutually orthogonal axes.

[0137] The display 800 has, for example, a light-emitting device 100 as a light source. For convenience, Figures 28 and 29 show a simplified representation of the light-emitting device 100.

[0138] The display 800 is a display device that displays images. The images include those that display only text information. The display 800 is a self-emissive display. As shown in Figures 28 and 29, the display 800 includes, for example, a circuit board 810, a lens array 820, and a heat sink 830.

[0139] The circuit board 810 is composed of, for example, the wiring board 90 of the light-emitting device 100. The circuit board 810 is equipped with a drive circuit for driving the light-emitting device 100. The drive circuit is, for example, a circuit including a CMOS. The drive circuit drives the light-emitting device 100 based on input image information. Although not shown in the figures, a translucent substrate is placed on the circuit board 810 to protect the circuit board 810.

[0140] The circuit board 810 includes, for example, a display area 812, a data line drive circuit 814, a scan line drive circuit 816, and a control circuit 818.

[0141] The display area 812 is composed of multiple pixels P. In the illustrated example, the pixels P are arranged along the X and Y axes.

[0142] Although not shown in the diagram, the circuit board 810 is provided with multiple scan lines and multiple data lines. For example, the scan lines extend along the X-axis, and the data lines extend along the Y-axis. The scan lines are connected to the scan line drive circuit 816. The data lines are connected to the data line drive circuit 814. Pixels P are provided corresponding to the intersections of the scan lines and data lines.

[0143] A single pixel P includes, for example, a light-emitting device 100, a lens 822, and a pixel circuit (not shown). The pixel circuit has a switching transistor that functions as a switch for the pixel P, with the gate of the switching transistor connected to the scan line and either the source or drain connected to the data line.

[0144] The data line drive circuit 814 and the scan line drive circuit 816 are circuits that control the driving of the light-emitting devices 100 that constitute the pixels P. The control circuit 818 controls the display of the image.

[0145] Image data is supplied to the control circuit 818 from the higher-level circuit. The control circuit 818 supplies various signals based on the image data to the data line drive circuit 814 and the scan line drive circuit 816.

[0146] When the scan line drive circuit 816 activates the scan signal and a scan line is selected, the switching transistor of the selected pixel P turns on. At this time, the data line drive circuit 814 supplies a data signal to the selected pixel P from the data line, causing the light-emitting device 100 of the selected pixel P to emit light in accordance with the data signal.

[0147] The lens array 820 has multiple lenses 822. For example, one lens 822 is provided for one light-emitting device 100. Light emitted from the light-emitting device 100 enters one lens 822.

[0148] The heatsink 830 is in contact with the circuit board 810. The material of the heatsink 830 is, for example, a metal such as copper or aluminum. The heatsink 830 dissipates the heat generated by the light-emitting device 100.

[0149] 6. Sixth Embodiment 6.1. Overall structure Next, the head-mounted display according to the sixth embodiment will be described with reference to the drawings. Figure 30 is a schematic perspective view showing the head-mounted display 900 according to the sixth embodiment. In Figure 30, the X-axis, Y-axis, and Z-axis are shown as three mutually orthogonal axes.

[0150] The head-mounted display 900, as shown in Figure 30, is a head-mounted display device with the appearance of eyeglasses. The head-mounted display 900 is worn on the observer's head. The observer is the user of the head-mounted display 900. The head-mounted display 900 allows the observer to see a virtual image and also allows them to see the external world through it. The head-mounted display 900 can also be called a virtual image display device.

[0151] The head-mounted display 900 includes, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0152] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the observer's right eye. The second display unit 910b displays a virtual image for the observer's left eye. In the illustrated example, the first display unit 910a is located in the -X axis direction of the second display unit 910b. The display units 910a and 910b include, for example, an image forming apparatus 911 and a light guide apparatus 915.

[0153] The image forming apparatus 911 forms image light. The image forming apparatus 911 includes, for example, an optical system such as a light source and a projection device, and an external member 912. The external member 912 houses the light source and the projection device.

[0154] The light guide device 915 covers the area in front of the observer's eyes. The light guide device 915 guides the image light formed by the image forming device 911, and also allows the observer to see the external light and the image light overlapping. Details of the image forming device 911 and the light guide device 915 will be described later.

[0155] Frame 920 supports the first display unit 910a and the second display unit 910b. The frame 920 surrounds the display units 910a and 910b, for example, when viewed from the Y-axis direction. In the illustrated example, the image forming apparatus 911 for the first display unit 910a is mounted on the -X-axis end of frame 920. The image forming apparatus 911 for the second display unit 910b is mounted on the +X-axis end of frame 920.

[0156] The first temple 930a and the second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends from the -X-axis end of the frame 920 in the +Y-axis direction. The second temple 930b extends from the +X-axis end of the frame 920 in the +Y-axis direction.

[0157] The first temple 930a and the second temple 930b are suspended over the observer's ears when the head-mounted display 900 is worn by the observer. The observer's head is positioned between the temples 930a and 930b.

[0158] 6.2. Image forming apparatus and light guide apparatus Figure 31 schematically shows the image forming apparatus 911 and light guide apparatus 915 of the first display unit 910a of the head-mounted display 900. The first display unit 910a and the second display unit 910b have basically the same configuration. Therefore, the following description of the first display unit 910a can also be applied to the second display unit 910b.

[0159] As shown in Figure 31, the image forming apparatus 911 includes, for example, a light-emitting device 120 as a light source, a light modulation device 913, and a projection device 914 for image formation.

[0160] The light modulator 913 modulates the light incident from the light emitter 120 according to the image information and emits image light. The light modulator 913 is a transmissive liquid crystal light bulb. The light emitter 120 may be a self-emitting light emitter that emits light according to the input image information. In this case, the light modulator 913 is not provided.

[0161] The projection device 914 projects the image light emitted from the optical modulator 913 toward the light guide device 915. The projection device 914 is, for example, a projection lens. A lens with an axially symmetric plane as its lens surface may be used as the lens component of the projection device 914.

[0162] The light guide device 915 is precisely positioned relative to the projection device 914, for example, by being screwed to the lens barrel of the projection device 914. The light guide device 915 includes, for example, an image light guide member 916 for guiding image light and a transparent member 918 for viewing.

[0163] The image light emitted from the projection device 914 enters the image light guide member 916. The image light guide member 916 is a prism that guides the image light toward the observer's eye. The image light that enters the image light guide member 916 is reflected repeatedly on the inner surface of the image light guide member 916, then reflected by the reflective layer 917 and emitted from the image light guide member 916. The image light emitted from the image light guide member 916 reaches the observer's eye. In the illustrated example, the reflective layer 917 reflects the image light in the +Y axis direction. The reflective layer 917 is made of, for example, a metal or a dielectric multilayer film. The reflective layer 917 may also be a half mirror.

[0164] The transparent member 918 is adjacent to the image light guide member 916. The transparent member 918 is fixed to the image light guide member 916. The outer surface of the transparent member 918 is continuous with, for example, the outer surface of the image light guide member 916. The transparent member 918 allows the observer to see through to the outside light. In addition to its function of guiding image light, the image light guide member 916 also has the function of allowing the observer to see through to the outside light.

[0165] The light-emitting device according to the above embodiment can be used in applications other than projectors, displays, and head-mounted displays. For example, the light-emitting device according to the above embodiment can be used as a light source for indoor and outdoor lighting, laser printers, scanners, in-vehicle lights, light-using sensing equipment, communication equipment, etc.

[0166] The embodiments and variations described above are examples only and are not limiting. For example, each embodiment and each variation can be combined as appropriate.

[0167] The present invention includes configurations substantially identical to those described in the embodiments, for example, configurations with the same function, method, and results, or configurations with the same purpose and effect. Furthermore, the present invention includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. Furthermore, the present invention includes configurations that produce the same effects or achieve the same purpose as those described in the embodiments. Finally, the present invention includes configurations that add known technology to the configurations described in the embodiments.

[0168] The following can be derived from the embodiments and modifications described above.

[0169] One embodiment of a light-emitting device is: First electrode and second electrode, A first semiconductor layer having a first conductivity type is provided between the first electrode and the second electrode, A second semiconductor layer is provided between the first semiconductor layer and the second electrode, and has a second conductivity type different from the first conductivity type. A light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, An insulating layer provided along the side surface of the first semiconductor layer, A metal layer is provided in contact with the insulating layer and along the side surface of the first semiconductor layer, and reflects light generated by the light-emitting layer, It has, The light generated in the light-emitting layer is emitted from the first electrode side. The metal layer has a first end in a first direction toward the first semiconductor layer from the light-emitting layer, The first semiconductor layer has a second end in the first direction, In the first direction, the position of the first end is the same as the position of the second end, Alternatively, the position of the first end is on the first side of the position of the second end.

[0170] This light-emitting device allows for miniaturization.

[0171] In one embodiment of a light-emitting device, The contact surface of the first electrode with the first semiconductor layer may be located inside the outer edge of the first semiconductor layer when viewed from the first direction.

[0172] This light-emitting device makes it possible to reduce the current flowing along the side of the first semiconductor layer.

[0173] In one embodiment of a light-emitting device, The contact surface may be located on the inside of the outer edge of the light-emitting layer when viewed from the first direction.

[0174] This light-emitting device makes it possible to reduce the current flowing along the side of the first semiconductor layer.

[0175] In one embodiment of a light-emitting device, The insulating layer is further provided on the side surface of the light-emitting layer and the side surface of the second semiconductor layer, The metal layer may be connected to the second electrode.

[0176] This light-emitting device allows light that has passed through the side of the second semiconductor layer to be reflected by the metal layer.

[0177] In one embodiment of a light-emitting device, The light-emitting layer and the second semiconductor layer may constitute a plurality of columnar portions.

[0178] This light-emitting device can emit laser light.

[0179] One form of projector is, It has one embodiment of the aforementioned light-emitting device.

[0180] One form of display is, It has one embodiment of the aforementioned light-emitting device.

[0181] One form of head-mounted display is: It has one embodiment of the aforementioned light-emitting device. [Explanation of symbols]

[0182] 2,4…Outer edge, 5…First substrate, 6…Opening, 7…Second substrate, 8…Third substrate, 9…Resist layer, 10,10a…Laminate, 11…Second edge, 12…First semiconductor layer, 12a…Semiconductor layer, 13…Side, 14…Light-emitting layer, 14a…MQW layer, 15…Side, 16…Second semiconductor layer, 16a…Semiconductor layer, 17…Side, 20…First electrode, 22…Contact surface, 30…Second electrode, 40…First insulating layer, 40a…Insulating layer, 41…Side, 42…Contact hole, 50,50a…Metal layer 51...First end, 60...Second insulating layer, 62...Contact hole, 64...First layer, 66...Second layer, 68...Third layer, 70...Third insulating layer, 80...Structure, 82...Third semiconductor layer, 84...MQW layer, 86...Fourth semiconductor layer, 88...Fourth insulating layer, 89...Metal layer, 90...Wiring board, 100...Light-emitting device, 102...Light-emitting element, 110,120...Light-emitting device, 120R...Red light source, 120G...Green light source, 120B...Blue light source, 130,200...Light-emitting device, 202,204...Columnar Part, 210...light-emitting device, 212...metal layer, 300...light-emitting device, 302...aperture, 700...projector, 702R...first optical element, 702G...second optical element, 702B...third optical element, 704R...first optical modulator, 704G...second optical modulator, 704B...third optical modulator, 706...cross dichroic prism, 708...projection device, 710...screen, 800...display, 810...circuit board, 812...display area, 814...data line drive circuit 816…Scan line drive circuit, 818…Control circuit, 820…Lens array, 822…Lens, 830…Heat sink, 900…Head-mounted display, 910a…First display unit, 910b…Second display unit, 911…Image forming apparatus, 912…External component, 913…Optical modulation device, 914…Projection device, 915…Light guide device, 916…Image light guide component, 917…Reflective layer, 918…Transparent component, 920…Frame, 930a…First temple, 930b…Second temple

Claims

1. First electrode and second electrode, A first semiconductor layer having a first conductivity type is provided between the first electrode and the second electrode, A second semiconductor layer is provided between the first semiconductor layer and the second electrode, and has a second conductivity type different from the first conductivity type. A light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, A first insulating layer provided along the side surface of the first semiconductor layer, A metal layer is provided that is in contact with the first insulating layer on the opposite side of the first semiconductor layer, along the side surface of the first semiconductor layer, and reflects light generated by the light-emitting layer, A second insulating layer is provided that is in contact with the metal layer on the opposite side of the first insulating layer, along the side surface of the first semiconductor layer, and reflects light that has passed through the metal layer at the interface with the metal layer, A light-emitting device having the following features.

2. In claim 1, The second insulating layer is SiO 2 A layered light-emitting device.

3. In claim 1 or 2, The aforementioned metal layer is a light-emitting device containing Au.

4. First electrode and second electrode, A first semiconductor layer having a first conductivity type is provided between the first electrode and the second electrode, A second semiconductor layer is provided between the first semiconductor layer and the second electrode, and has a second conductivity type different from the first conductivity type. A light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, An insulating layer provided along the side surface of the first semiconductor layer, A metal layer is provided in contact with the insulating layer and along the side surface of the first semiconductor layer, and reflects light generated by the light-emitting layer, It has, The light generated in the light-emitting layer is emitted from the first electrode side. The metal layer has a first end in a first direction toward the first semiconductor layer from the light-emitting layer. death, The first semiconductor layer has a second end in the first direction, In the first direction, the position of the first end is the same as the position of the second end, Alternatively, the position of the first end is on the first direction side than the position of the second end. The contact surface of the first electrode with the first semiconductor layer is provided on the inside of the outer edge of the first semiconductor layer when viewed from the first direction. The contact surface is provided on the inside of the outer edge of the light-emitting layer when viewed from the first direction, in a light-emitting device.

5. First electrode and second electrode, A first semiconductor layer having a first conductivity type is provided between the first electrode and the second electrode, A second semiconductor layer is provided between the first semiconductor layer and the second electrode, and has a second conductivity type different from the first conductivity type. A light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, An insulating layer provided along the side surface of the first semiconductor layer, A metal layer is provided in contact with the insulating layer and along the side surface of the first semiconductor layer, and reflects light generated by the light-emitting layer, It has, A light-emitting device in which the light-emitting layer and the second semiconductor layer constitute a plurality of columnar parts.

6. A projector having a light-emitting device according to any one of claims 1 to 5.

7. A display having a light-emitting device according to any one of claims 1 to 5.

8. A head-mounted display having a light-emitting device according to any one of claims 1 to 5.

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