Laser light-emitting device structure

Abstract

The utility model relates to a laser luminescent device structure which is a luminescent device composed of a first semiconductor layer, a second semiconductor layer and an active layer. The active layer is located between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is arranged on the substrate; the first conducting layer is in ohmic contact with the second semiconductor layer; the second conducting layer is electrically connected with the first conducting layer; the positive electrode is electrically connected with the second conducting layer; the first conductive layer, the second conductive layer and the positive electrode jointly form a first electric connection layer; the first insulating layer covers part of the surface of the second semiconductor layer; the first insulating layer wraps the side walls of the first conductive layer and the second conductive layer in the process of etching the ridge. According to the utility model, in the process of etching the ridge, the first conductive layer and the second conductive layer are isolated, and etching gas is prevented from reacting with the first conductive layer and the second conductive layer, so that the stability of the device is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor laser technology, and in particular to a structure of a laser light-emitting device. Background Technology

[0002] The side-emitting laser diode has a P-type semiconductor contact layer that is mainly a transparent conductive layer, one or more of palladium, platinum, nickel, and titanium. The metal oxide layer or metal layer can act as a mask and ohmic contact for the ridge. An optical insulating layer is covered on the side of the ridge to form optical confinement, allowing current to be injected from the ridge to form a high current density and reach the laser threshold.

[0003] For edge-emitting laser diodes, the P-type semiconductor contact layer is mainly a transparent conductive layer or a metal layer, such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), aluminum-gallium co-doped zinc oxide (AGZO), indium gallium zinc oxide (IGZO), palladium metal layer, platinum metal layer, nickel metal layer, titanium metal layer, or one or more of these. The metal oxide layer or metal layer can serve as a mask for the ridge and an ohmic contact. During the fabrication of the ridge, the epitaxial layer needs to be dry-etched. The conductive layer exposed on the sidewalls reacts with the etching gas during the dry etching process, thereby generating corresponding plasma (In). 3+ Sn 3 + O 2- These ions, which adhere to the sidewalls of the ridge, can cause instability in the entire device, and the residue on the sidewalls increases the risk of leakage. Utility Model Content

[0004] Based on the technical problems existing in the background technology, this utility model proposes a laser light-emitting device structure that isolates the conductive layer during the etching process, thereby preventing the etching gas from reacting with the conductive layer and improving the stability of the device.

[0005] This utility model proposes a laser light-emitting device structure, which is a light-emitting device composed of a first semiconductor layer, a second semiconductor layer and an active layer; the active layer is located between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed on a substrate;

[0006] A first conductive layer forms an ohmic contact with the second semiconductor layer, a second conductive layer forms an electrical connection with the first conductive layer, and a positive electrode forms an electrical connection with the second conductive layer; the first conductive layer, the second conductive layer, and the positive electrode together constitute the first electrical connection layer;

[0007] A first insulating layer covers a portion of the surface of the second semiconductor layer; the first insulating layer covers the sidewalls of the first and second conductive layers during the etching ridge process;

[0008] A second insulating layer that covers the surface of the first insulating layer and a portion of the surface of the second semiconductor layer and is partially exposed to the outside of the device;

[0009] It covers the other side of the substrate, and is placed on both sides of the substrate with the first semiconductor layer, and forms an electrically connected negative electrode with the first semiconductor layer. The negative electrode and the substrate form a second electrically connected layer.

[0010] Preferably, the first conductive layer is a transparent conductive layer structure such as indium tin oxide, the second conductive layer, the positive electrode, and the negative electrode are multilayer metal structures, and the first insulating layer and the second insulating layer are insulating materials.

[0011] Preferably, during the fabrication of the positive electrode, the first insulating layer of the ridge sidewall is removed.

[0012] The beneficial effects of this invention are: during the etching process, the conductive layer is isolated, preventing the etching gas from reacting with the conductive layer, thereby improving the stability of the device. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the structure of a laser light-emitting device proposed in this utility model;

[0014] Figure 2 This is an enlarged schematic diagram of the ridge of this utility model.

[0015] In the figure: 1. First semiconductor layer, 2. Second semiconductor layer, 3. Active layer, 4. Substrate, 5. First conductive layer, 6. Second conductive layer, 7. Positive electrode, 8. First insulating layer, 9. Second insulating layer, 10. Negative electrode. Detailed Implementation

[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0017] Reference Figure 1-2 A laser light-emitting device structure includes a light-emitting device composed of a first semiconductor layer 1, a second semiconductor layer 2, and an active layer 3; the active layer 3 is located between the first semiconductor layer 1 and the second semiconductor layer 2; the first semiconductor layer 1 is disposed on a substrate 4, characterized in that...

[0018] A first conductive layer 5 forms an ohmic contact with the second semiconductor layer 2. The first conductive layer 5 is a transparent conductive layer structure such as indium tin oxide. A second conductive layer 6 forms an electrical connection with the first conductive layer 5. The second conductive layer 6 is a multilayer metal structure. A positive electrode 7 forms an electrical connection with the second conductive layer 6. The positive electrode 7 is a multilayer metal structure. The first conductive layer 5, the second conductive layer 6, and the positive electrode 7 together form the first electrical connection layer.

[0019] The first insulating layer 8, covering a portion of the surface of the second semiconductor layer 2, includes insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. During the etching ridge process, the first insulating layer 8 covers the sidewalls of the first conductive layer 5 and the second conductive layer 6. (Refer to...) Figure 2 As shown; during the fabrication of the positive electrode 7, the first insulating layer 8 on the ridge sidewall is removed;

[0020] The second insulating layer 9, which covers the surface of the first insulating layer 8 and a portion of the surface of the second semiconductor layer 2 and is partially exposed to the outside of the device, includes insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.

[0021] A negative electrode 10 is covered on the other side of the substrate 4 and is placed on both sides of the substrate 4, respectively, and is electrically connected to the first semiconductor layer 1. The negative electrode 10 has a multi-metal layer structure, and the negative electrode 10 and the substrate 4 form a second electrical connection layer.

[0022] This utility model proposes a method for fabricating a laser light-emitting device structure, which specifically includes the following steps;

[0023] S1. A first semiconductor layer 1, an active layer 3, and a second semiconductor layer 2 are sequentially grown on substrate 4;

[0024] S2. Using ultraviolet photomask patterning and sputtering, a mask 0.5-3µm wide is fabricated by using one or more metals or metal oxides selected from the first conductive layer 5 and the second conductive layer 6, such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), aluminum-gallium co-doped zinc oxide (AGZO), indium gallium zinc oxide (IGZO), palladium, platinum, nickel, and titanium as the ridge mask and ohmic contact.

[0025] S3. Using ultraviolet photomask patterning and plasma etching, ridges 0.5-3µm wide and 0.1-0.5µm deep were fabricated for the first time.

[0026] S4. Using chemical vapor deposition, a first insulating layer 8 is grown, including insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. The first insulating layer 8 covers part of the surface of the second semiconductor layer 2 and encapsulates the sidewalls of the first conductive layer 5 and the sidewalls and surface of the second conductive layer 6.

[0027] S5. Using ultraviolet photomask patterning and plasma etching, a second ridge with a width of 0.5-3 μm and a depth of 0.5-2 μm is fabricated. During this process, the first insulating layer 8 covers the sidewalls of the first conductive layer 5 and the second conductive layer 6 to prevent them from reacting with each other during the plasma etching process.

[0028] S6. Using chemical vapor deposition, a second insulating layer 9 is grown, including insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. The second insulating layer 9 covers the entire surface of the ridge and conductive layer.

[0029] S7. Use an ultraviolet photomask to pattern the photoresist on the ridge and use plasma etching to etch the insulating layer in the area without photoresist.

[0030] S8. The positive electrode 7 and the negative electrode 10 are fabricated by patterning with an ultraviolet photomask and sputtering.

[0031] S9, split into strips, coated with cavity film, forming a laser diode.

[0032] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A laser light-emitting device structure, comprising a light-emitting device composed of a first semiconductor layer (1), a second semiconductor layer (2), and an active layer (3); the active layer (3) is located between the first semiconductor layer (1) and the second semiconductor layer (2); the first semiconductor layer (1) is disposed on a substrate (4), characterized in that, A first conductive layer (5) forms an ohmic contact with the second semiconductor layer (2), a second conductive layer (6) forms an electrical connection with the first conductive layer (5), and a positive electrode (7) forms an electrical connection with the second conductive layer (6); the first conductive layer (5), the second conductive layer (6), and the positive electrode (7) together constitute the first electrical connection layer; A first insulating layer (8) covers a portion of the surface of the second semiconductor layer (2); the first insulating layer (8) covers the sidewalls of the first conductive layer (5) and the second conductive layer (6) during the etching process; A second insulating layer (9) covers the surface of the first insulating layer (8) and a portion of the surface of the second semiconductor layer (2) and is partially exposed to the outside of the device; It covers the other side of the substrate (4), and is placed on both sides of the substrate (4) respectively with the first semiconductor layer (1), and forms an electrically connected negative electrode (10) with the first semiconductor layer (1). The negative electrode (10) and the substrate (4) form a second electrically connected layer.

2. The laser light-emitting device structure according to claim 1, characterized in that, The first conductive layer (5) is a transparent conductive layer structure, the second conductive layer (6), the positive electrode (7), and the negative electrode (10) are multi-layer metal structures, and the first insulating layer (8) and the second insulating layer (9) are insulating materials.

3. The laser light emitting device structure according to claim 1, wherein During the fabrication of the positive electrode (7), the first insulating layer (8) on the ridge sidewall is removed.

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