Reaction vessel, method of using the same, and method of manufacturing the same

Abstract

To provide a reaction vessel which has a simple constitution and is easily miniaturized.SOLUTION: The reaction vessel 10 is for supplying a fluid F to treat a substrate S, and basically includes a substrate holder 20, a stacked block 12, and a connection means 60. The fluid F may be only a liquid, only a gas, or a mixture of a liquid and a gas. The substrate holder 20 holds the substrate S. The laminated block 12 is formed by laminating a plurality of plate-like blocks having both flat surfaces. The connecting means 60 maintains the shape of the laminated block 12 by connecting the plurality of blocks. On the surface of at least one block constituting the stacked block 12, a groove serving as a flow path of the fluid F and a recess for accommodating the substrate holder 20 are formed.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a reaction vessel for performing surface treatment (such as cleaning, film formation, etching, etc.) on a substrate such as a semiconductor wafer.

Background Art

[0002] Taking an example of a general semiconductor manufacturing process, it is as follows. Semiconductor wafer → Cleaning → Film formation → Cleaning → Resist coating → Exposure and development → Etching → Resist stripping → Cleaning → Inspection and assembly. As a device used in these processes, a single wafer type reaction vessel that processes semiconductor wafers one by one is known. For example, in a single wafer type cleaning device, a single semiconductor wafer is put into the chamber from above the chamber, and while rotating the semiconductor wafer on a horizontal plane, a cleaning liquid is flowed from a nozzle above to the semiconductor wafer (for example, Patent Document 1). Note that the reaction vessel in this specification is a general term for a cleaning device, a film forming device, an etching device, a resist coating / stripping device, etc.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, the conventional single wafer type reaction vessel has a problem that its structure is complex and large-sized. Taking the above-mentioned example of the cleaning device, a wafer loading / unloading mechanism and a cleaning liquid supply mechanism are attached above a cylindrical stainless steel chamber, and a wafer rotation mechanism etc. are attached below.

[0005] The present invention has been made in view of such circumstances, and an object thereof is to provide a reaction vessel with a simple structure and easy miniaturization.

Means for Solving the Problems

[0006] The reaction vessel of the present invention is a reaction vessel for processing a substrate by supplying a liquid or gaseous fluid, and comprises a substrate holder for holding the substrate, a laminated block formed by stacking a plurality of plate-shaped blocks having flat surfaces on both sides, and connecting means for connecting the plurality of blocks, wherein a groove is formed on the surface of at least one of the plurality of blocks to serve as a fluid channel, and a recess is formed on the surface of at least one of the plurality of blocks for accommodating the substrate holder.

[0007] This allows for the creation of a reaction vessel simply by machining grooves or recesses on the surface of plate-shaped blocks, stacking multiple blocks, and connecting these blocks with connecting means. Compared to conventional single-wafer reaction vessels, the structure is simpler, miniaturization is easier, and manufacturing is simpler. Since high-precision machining methods can be used to process the blocks, the manufacturing cost is low regardless of the block material. The fluid may be either a liquid or a gas, or a mixture of liquid and gas.

[0008] In an embodiment of the reaction vessel of the present invention, when both sides of the block are considered as the upper and lower surfaces, the stacked block preferably has an upper block and a lower block as a plurality of blocks, and is stacked so that the lower surface of the upper block and the upper surface of the lower block face each other, the recess is formed on the lower surface of the upper block or the upper surface of the lower block, a gas-liquid supply groove is formed on the lower surface of the upper block which serves as a fluid flow path and communicates with the recess, a gas-liquid supply hole is formed on the upper surface of the upper block which communicates with the gas-liquid supply groove, a gas-liquid discharge groove is formed on the upper or lower surface of the lower block which serves as a fluid flow path and communicates with the recess, and a gas-liquid discharge hole is formed on the lower surface of the lower block which communicates with the gas-liquid discharge groove.

[0009] The recess may be formed only on the lower surface of the upper block, only on the upper surface of the lower block, or on both the lower surface of the upper block and the upper surface of the lower block. Fluid entering the reaction vessel from the gas-liquid supply hole on the upper surface of the upper block passes through the gas-liquid supply groove on the lower surface of the upper block and reaches the recess where the substrate holder is housed. The fluid that reaches the recess is used to process the substrate held in the substrate holder and passes through the gas-liquid discharge groove on the upper or lower surface of the lower block and exits the reaction vessel from the gas-liquid discharge hole on the lower surface of the lower block. This provides a reaction vessel that processes a substrate by introducing fluid from the upper surface of the stacked block and discharges the fluid from the lower surface of the stacked block, with a simple configuration. In this specification, the vertical direction is "down," the opposite direction is "up," and the direction perpendicular to the vertical direction is "horizontal."

[0010] According to an embodiment of the reaction vessel of the present invention, the substrate holder holds the substrate with at least one of its surfaces exposed, and preferably the upper block or the lower block has an opening formed therein that faces the exposed surface of the substrate and penetrates the upper and lower surfaces, and a quartz plate is provided to close the opening.

[0011] Hereinafter, the upper block or lower block may simply be referred to as the block. When the substrate holder holds the substrate, only the top surface of the substrate may be exposed, only the bottom surface may be exposed, or both sides of the substrate may be exposed. An opening is formed in the block facing the exposed surface of the substrate, and the opening is sealed with a quartz plate. As a result, since the quartz plate is translucent, it becomes possible to irradiate the substrate with infrared or ultraviolet light through the quartz plate. Examples include heat treatment by infrared irradiation, and photo-CVD or photo-etching by ultraviolet irradiation. Furthermore, if the material of the block is an insulator and non-magnetic material such as synthetic resin, the quartz plate is also an insulator and non-magnetic material, so heat treatment of the substrate by high-frequency induction heating becomes possible. In addition, because the quartz plate is translucent, the processing of the substrate can be observed visually or with a camera from outside the reaction vessel.

[0012] According to an embodiment of the reaction vessel of the present invention, a stepped portion of a certain depth into which the quartz plate is fitted is formed on the lower surface of the lower block, the gas-liquid discharge groove formed in the lower block includes a tunnel portion formed inside the lower block, the tunnel portion has a bottom surface extending from the upper surface of the quartz plate fitted in the stepped portion to the gas-liquid discharge hole, and it is preferable that the bottom surface is at the same height as or lower than the upper surface of the quartz plate.

[0013] The lower surface of the lower block has an opening and a stepped section of a certain depth surrounding the opening. A quartz plate is fitted into this stepped section, so that the quartz plate covers the opening from below. Inside the lower block, a tunnel section is formed with a bottom surface extending from the top surface of the quartz plate fitted into the stepped section to a gas-liquid discharge hole. In this case, the bottom surface of the tunnel section is at the same height as or lower than the top surface of the quartz plate, so any fluid remaining on the top surface of the quartz plate passes through the tunnel section by its own weight and exits through the gas-liquid discharge hole on the lower surface of the lower block. As a result, even when a quartz plate is fitted into the lower surface of the lower block, any fluid remaining on the quartz plate can be easily discharged without tilting the reaction vessel or using a pump.

[0014] In an embodiment of the reaction vessel of the present invention, it is preferable that linear protrusions are formed on the upper block or the lower block so as to surround the opening, and that the opening is sealed by the quartz plate pressing against the protrusions.

[0015] The block has an opening and a linear projection surrounding the opening. In other words, when viewed from above, the projection extends linearly around the opening. Therefore, when the quartz plate is fixed in place while pressing against the projection, the opening is sealed. In other words, the projection acts as an O-ring. Consequently, instead of using an O-ring, the projection can be formed by machining the block, reducing the number of parts and further simplifying the structure.

[0016] According to an embodiment of the reaction vessel of the present invention, it is preferable that a holder insertion / removal opening is formed on the side surface of the stacked block, which is the surface connecting the upper surface of the upper block and the lower surface of the lower block, and that the substrate holder can be inserted into and removed from the recess.

[0017] By inserting and removing the substrate holder horizontally from the side of the stacking block, handling the substrate becomes easier compared to inserting and removing it vertically, as it does not have to work against gravity. This configuration is effective for the increasing size of substrates in recent years.

[0018] According to an embodiment of the reaction vessel of the present invention, it is preferable that the gas-liquid supply groove is provided with a groove-shaped venturi channel having a throat section with the smallest channel cross-sectional area between a channel narrowing section where the channel cross-sectional area is reduced and a channel widening section where the channel cross-sectional area is expanded, and that the gas-liquid supply hole is provided with a gas supply hole communicating with the throat section.

[0019] In a Venturi channel, gas supplied from a gas supply hole is mixed with the liquid, and this liquid is passed through the narrowest throat section at a speed reaching the speed of sound. This generates a shock wave, causing bubble collapse, and a microbubble liquid containing fine bubbles is obtained downstream of the throat section. A Venturi channel with this function can be formed simultaneously in the process of forming the gas-liquid supply groove on the lower surface of the upper block. [Effects of the Invention]

[0020] The reaction vessel of the present invention has a simpler structure and is easier to miniaturize and manufacture than conventional single-wafer reaction vessels, as it is constructed by simply stacking multiple plate-shaped blocks with grooves and recesses processed into their surfaces. [Brief explanation of the drawing]

[0021] [Figure 1] Figure 1[A] is a cross-sectional view showing the reaction vessel of this embodiment, and Figure 1[B] is a cross-sectional view showing the reaction vessel of this embodiment in use. [Figure 2] This is an exploded cross-sectional view showing the reaction vessel of this embodiment. [Figure 3] Figure 3 [A1][A2][A3] is a partial cross-sectional view showing a method of forming a tunnel portion in the reaction vessel of the present embodiment, and Figure 3 [B] is a partial cross-sectional view showing a modified example of the reaction vessel of the present embodiment. [Figure 4] It is an exploded perspective view showing the reaction vessel of the present example. [Figure 5] It is an exploded perspective view showing the reaction vessel of the present example turned upside down. [Figure 6] It is a perspective view showing a method of using the reaction vessel of the present example. Figure 6 [A] shows the state before the substrate holder is placed in the reaction vessel, and Figure 6 [B] shows the state after the substrate holder is placed in the reaction vessel. [Figure 7] Figure 7 [A] is a plan view showing the upper block in the reaction vessel of the present example, and Figure 7 [B] is a cross-sectional view taken along line 7B-7B in Figure 7 [A]. [Figure 8] Figure 8 [A] is a plan view showing the lower block and the substrate holder in the reaction vessel of the present example, and Figure 8 [B] is a cross-sectional view taken along line 8B-8B in Figure 8 [A]. [Figure 9] It shows a method of forming a tunnel portion in the reaction vessel of the present example. Figure 9 [A1][A2] are partial plan views, Figure 9 [B1] is a cross-sectional view taken along line 9B1-9B1 in Figure 9 [A1], and Figure 9 [B2] is a cross-sectional view taken along line 9B2-9B2 in Figure 9 [A2]. [Figure 10] It shows a method of forming a tunnel portion in the reaction vessel of the present example. Figure 10 [A1][A2] are partial plan views, Figure 10 [B1] is a cross-sectional view taken along line 10B1-10B1 in Figure 10 [A1], and Figure 10 [B2] is a cross-sectional view taken along line 10B2-10B2 in Figure 10 [A2]. [Figure 11] It shows a method of forming a tunnel portion in the reaction vessel of the present example. Figure 11 [A1][A2] are partial plan views, Figure 11 [B1] is a cross-sectional view taken along line 11B1-11B1 in Figure 11 [A1], and Figure 11 [B2] is a cross-sectional view taken along line 11B2-11B2 in Figure 11 [A2]. [Figure 12]Figure 12[A] shows a partial plan view of the tunnel section and the lower quartz plate in the reaction vessel of this embodiment, and Figure 12[B] shows a cross-sectional view taken along line 12B-12B in Figure 12[A]. [Figure 13] Figure 13[A] is a schematic diagram showing a modified version of the reaction vessel in this embodiment, where Figure 13[A] shows the substrate holder inside the reaction vessel, Figure 13[B] shows the substrate holder outside the reaction vessel, and Figure 13[C] shows the substrate removed from the substrate holder. [Modes for carrying out the invention]

[0022] <Embodiment> Figures 1[A][B] show a cross-section of the reaction vessel 10 of this embodiment after assembly, and Figure 2 shows a cross-section before assembly. In these figures, the reaction vessel 10 has a symmetrical structure, so if the same part is on both the left and right sides, only one side is given a reference numeral. Also, Figure 1[B] shows the state in use, and some reference numerals are omitted.

[0023] As shown in Figures 1 and 2, the reaction vessel 10 is for processing a substrate S by supplying a fluid F, and basically comprises a substrate holder 20, a stacked block 12, and a connecting means 60. The fluid F may be a liquid only, a gas only, or a mixture of liquid and gas. The substrate holder 20 holds the substrate S. The stacked block 12 is made up of multiple plate-shaped blocks having flat surfaces on both sides stacked together. The connecting means 60 maintains the shape of the stacked block 12 by connecting the multiple blocks. As will be described later, at least one of the blocks constituting the stacked block 12 has a groove that serves as a flow path for the fluid F and a recess for accommodating the substrate holder 20 formed on its surface. The block in which the groove is formed and the block in which the recess is formed may be the same or different.

[0024] Here, both sides of the block are referred to as the top surface and the bottom surface. In this embodiment, the stacked block 12 has two blocks, an upper block 30 and a lower block 40, and is stacked so that the bottom surface 32 of the upper block 30 and the top surface 41 of the lower block 40 face each other. A recess 16 for housing the substrate holder 20 is formed on the top surface 41 of the lower block 40. The upper block 30 has a gas-liquid supply groove 33 formed on its bottom surface 32, which serves as a fluid F passage and communicates with the recess 16, and a gas-liquid supply hole 34 that communicates with the gas-liquid supply groove 33 is formed on its top surface 31. The lower block 40 has a gas-liquid discharge groove 43 formed on its bottom surface 42, which serves as a fluid F passage and communicates with the recess 16, and a gas-liquid discharge hole 44 that communicates with the gas-liquid discharge groove 43.

[0025] The substrate holder 20 holds the substrate S with both sides of the substrate S, i.e., the upper surface S1 and the lower surface S2, exposed. The upper block 30 has an opening 35 that penetrates the upper surface 31 and the lower surface 32 in the stacking direction. The opening 35 faces the upper surface S1 of the substrate S. The lower block 40 has an opening 45 that penetrates the upper surface 41 and the lower surface 42 in the stacking direction. The opening 45 faces the lower surface S2 of the substrate S. The upper side of the opening 35 is covered by the upper quartz plate 51, and the lower side of the opening 45 is covered by the lower quartz plate 52.

[0026] A stepped portion 46 is formed on the lower surface 42 of the lower block 40 so as to surround the opening 45. The stepped portion 46 is of a certain depth and the lower quartz plate 52 is fitted into it. The gas-liquid discharge groove 43 formed in the lower block 40 includes a tunnel portion 47 formed inside the lower block 40. The tunnel portion 47 has a bottom surface 47x that extends from the upper surface 521 of the lower quartz plate 52 within the stepped portion 46 to the gas-liquid discharge hole 44. The bottom surface 47x is at the same height as or lower than the upper surface 521 of the lower quartz plate 52.

[0027] Next, each component will be described in detail. The substrate S used in this embodiment is a disc-shaped semiconductor wafer. The substrate S is not limited to a disc shape; it may also be a rectangular plate or the like. The fluid F is a cleaning solution, drying gas, etching solution or gas, film formation solution or gas, etc. The substrate holder 20 is a rectangular plate made of synthetic resin such as PTFE, and has a circular opening 25 in the center to match the shape of the substrate S. The opening 25 penetrates both sides of the substrate holder 20, and a semicircular projection 23 is formed inside the opening 25. By placing the substrate S on the projection 23, the substrate holder 20 holds the substrate S with its upper surface S1 and lower surface S2 exposed.

[0028] The upper block 30 is a rectangular plate made of synthetic resin such as PTFE, and has a circular opening 35 in the center to match the shape of the substrate S. In addition to the opening 35, the upper block 30 also has a gas-liquid supply groove 33, a gas-liquid supply hole 34, and a stepped portion 36. The gas-liquid supply groove 33 and the gas-liquid supply hole 34 serve as pathways for the fluid F supplied to the substrate S. The gas-liquid supply groove 33 is rectangular and the gas-liquid supply hole 34 is circular in shape, as the cross-section perpendicular to the flow direction of the fluid F is easy to process. The gas-liquid supply hole 34 has an internal thread (not shown) for threaded joint connection. The number of gas-liquid supply grooves 33 and gas-liquid supply holes 34 can be any number, as long as there is at least one of each. The upper quartz plate 51 is disc-shaped to match the shape of the substrate S. Since the gas-liquid supply hole 34 has an internal thread, it is formed at a position away from the upper quartz plate 51. The stepped portion 36 is an annular recess for fitting the upper quartz plate 51 and sealing the opening 35, and has a depth corresponding to the thickness of the upper quartz plate 51 and an inner diameter corresponding to the outer diameter of the upper quartz plate 51.

[0029] The lower block 40, like the upper block 30, is a rectangular plate made of synthetic resin such as PTFE, and has a circular opening 45 in the center to match the shape of the substrate S. In addition to the opening 45, the lower block 40 also has a gas-liquid discharge groove 43, a gas-liquid discharge hole 44, a stepped portion 46, and a recess 16. The gas-liquid discharge groove 43 and the gas-liquid discharge hole 44 serve as pathways for the fluid F supplied to the substrate S. The gas-liquid discharge groove 43 is rectangular and the gas-liquid discharge hole 44 is circular in shape, as the cross-section perpendicular to the flow direction of the fluid F is easy to process. The gas-liquid discharge hole 44 has an internal thread (not shown) for threaded joint connection. The number of gas-liquid discharge grooves 43 and gas-liquid discharge holes 44 can be any number, as long as each is one or more. The lower quartz plate 52 is disc-shaped to match the shape of the substrate S. Since an internal thread is formed in the gas-liquid discharge hole 44, the gas-liquid discharge hole 44 is formed at a position away from the lower quartz plate 52. The stepped portion 46 is an annular recess for fitting the lower quartz plate 52 and sealing the opening 45, and has a depth corresponding to the thickness of the lower quartz plate 52 and an inner diameter corresponding to the outer diameter of the lower quartz plate 52.

[0030] As mentioned above, the lower block 40 has almost the same structure as the upper block 30, but the lower block 40 has a recess 16 formed therein. The recess 16 is a space for housing the substrate holder 20, and is a flattened rectangular parallelepiped space to match the rectangular plate-shaped substrate holder 20. In other words, the recess 16 has internal dimensions that correspond to the external dimensions of the substrate holder 20. The recess 16 may be formed in the upper block 30, or a portion may be formed in the lower block 40 and the remainder in the upper block 30.

[0031] In this embodiment, the upper block 30 is provided with an opening 35 and an upper quartz plate 51, and the lower block 40 is provided with an opening 45 and a lower quartz plate 52. However, the opening and quartz plate may be provided in only one of the two blocks as needed, or they may not be provided in either block if light treatment of the substrate S is not required.

[0032] The connecting means 60 includes, for example, an upper plate 61, a lower plate 62, a bolt 67, and a nut 68. The upper plate 61 and the lower plate 62 are made of metal, such as stainless steel or aluminum. The upper plate 61 and the lower plate 62 have circular openings 63 and 64 formed in them to match the shapes of the upper quartz plate 51 and the lower quartz plate 52, respectively, and through holes 65 and 66 are formed to match the positions of the gas-liquid supply hole 34 and the gas-liquid discharge hole 44, respectively. The upper quartz plate 51, upper block 30, lower block 40, and lower quartz plate 52 are stacked between the upper plate 61 and the lower plate 62. Through holes 69 are drilled in the upper plate 61, upper block 30, lower block 40, and lower plate 62. A bolt 67 passes through the through hole 69, and a nut 68 is screwed onto the end of the bolt 67. This tightens the space between the upper plate 61 and the lower plate 62.

[0033] Next, the manufacturing method of the reaction vessel 10 will be described, mainly based on Figure 2. First, two rectangular plates made of synthetic resin such as PTFE are prepared. By processing the surface of one of them, an opening 35, a gas-liquid supply groove 33, a gas-liquid supply hole 34, and a stepped portion 36 are formed, and this becomes the upper block 30. Similarly, by processing the surface of the remaining plate, an opening 45, a gas-liquid discharge groove 43, a tunnel portion 47 (described later), a gas-liquid discharge hole 44, a stepped portion 46, and a recess 16 are formed, and this becomes the lower block 40. For these processing steps, a cutting method using a machining center, which allows for easy high-precision processing, can be used. The substrate holder 20 can also be manufactured using the same method.

[0034] Next, the reaction vessel 10 is assembled by preparing the upper plate 61, lower plate 62, upper quartz plate 51, lower quartz plate 52, bolts 67 and nuts 68. First, the upper quartz plate 51, upper block 30, lower block 40 and lower quartz plate 52 are sandwiched between the upper plate 61 and the lower plate 62. Then, the bolts 67 are inserted through the insertion holes 69 drilled in the upper plate 61, upper block 30, lower block 40 and lower plate 62, the nuts 68 are screwed onto the ends of the bolts 67, and the space between the upper plate 61 and the lower plate 62 is tightened by rotating the bolts 67. This completes the assembly of the reaction vessel 10. The configuration of the connecting means 60 allows for easy disassembly and assembly, providing excellent convenience for cleaning, adjustment, and parts replacement. In addition to these parts, adhesives may be used in conjunction with these parts as the connecting means 60.

[0035] Here, two examples of methods for forming the tunnel portion 47 of the lower block 40 will be described. The first example will be described based on Figures 3[A1][A3]. First, as shown in Figure 3[A1], the upper surface 41 and lower surface 42 of the lower block 40 are machined to form a groove 43a that will become the gas-liquid discharge groove 43 and a hole 44a that will become the gas-liquid discharge hole 44, and the upper surface 41 is machined to form a hollowed-out portion 40a. In parallel with this, a fitted block 40b is prepared. The hollowed-out portion 40a is, for example, a rectangular parallelepiped space, and the fitted block 40b is a rectangular parallelepiped of a size corresponding to the hollowed-out portion 40a. Then, the lower surface 42b of the fitted block 40b is machined to form a groove 47b that will become the tunnel portion 47. Finally, by fitting the interlocking block 40b into the hollowed-out section 40a, the upper surface 41b of the interlocking block 40b and the upper surface 41 of the lower block 40 become flush, and as shown in Figure 3[A3], the interlocking block 40b is integrated with the lower block 40, forming the gas-liquid discharge groove 43, the gas-liquid discharge hole 44, and the tunnel section 47. For this fitting, for example, press-fitting or adhesive may be used.

[0036] The second example will be explained based on Figures 3[A2][A3]. In the first example, a groove 47b that will become the tunnel section 47 is formed in the fitting block 40b, whereas in the second example, a groove 47c that will become the tunnel section 47 is formed in the lower block 40. First, as shown in Figure 3[A2], the upper surface 41 and lower surface 42 of the lower block 40 are processed to form a groove 43c that will become the gas-liquid discharge groove 43, and the upper surface 41 is processed to form a groove 47c that will become the tunnel section 47, and then a hollowed-out section 40c is formed on top of that. In parallel with this, a fitting block 40d is prepared. The hollowed-out section 40c is, for example, a rectangular parallelepiped space, and the fitting block 40d is a rectangular parallelepiped of a size corresponding to the hollowed-out section 40c. Then, by fitting the interlocking block 40d into the hollowed-out section 40c, the upper surface 41d of the interlocking block 40d and the upper surface 41 of the lower block 40 become flush, and as shown in Figure 3[A3], the interlocking block 40d is integrated with the lower block 40, forming the gas-liquid discharge groove 43 and the tunnel section 47, and finally the gas-liquid discharge hole 44 is drilled. For this interlocking, for example, press-fitting or adhesive may be used.

[0037] Next, the method of using the reaction vessel 10 will be explained, mainly based on Figure 1[B]. First, a fluid supply pipe (not shown) is connected to the gas-liquid supply hole 34 via a threaded fitting. Similarly, a fluid discharge pipe (not shown) is connected to the gas-liquid discharge hole 44 via a threaded fitting. These pipes are equipped with manual or electromagnetic valves, which can be opened and closed as needed. When the valves of the fluid supply pipes are opened, fluid F is supplied into the reaction vessel 10 from the gas-liquid supply hole 34 on the upper surface 31 of the upper block 30. The fluid F that enters the reaction vessel 10 passes through the gas-liquid supply groove 33 on the lower surface 32 of the upper block 30 and reaches the recess 16 in which the substrate holder 20 is housed. The fluid F that reaches the recess 16 is used to process the substrate S held in the substrate holder 20, and passes through the gas-liquid discharge groove 43 and tunnel section 47 on the lower surface 42 of the lower block 40, and exits the reaction vessel 10 from the gas-liquid discharge hole 44 on the lower surface 42 of the lower block 40.

[0038] In this case, lamps 53 and 54 may be provided outside the reaction vessel 10 so as to face the upper quartz plate 51 and the lower quartz plate 52. The lamps 53 and 54 are, for example, infrared lamps and ultraviolet lamps. The infrared or ultraviolet light emitted from the lamps 53 and 54 passes through the upper quartz plate 51 and the lower quartz plate 52 and reaches the upper surface S1 and lower surface S2 of the substrate S. As a result, the processing of the substrate S is accelerated by the infrared or ultraviolet light.

[0039] Next, the effects of the reaction vessel 10 will be explained. [1] The reaction vessel 10 is constructed by simply stacking plate-shaped blocks such as the upper block 30 and the lower block 40, with grooves and recesses processed on their surfaces. Compared to conventional single-wafer reaction vessels, it has a simpler structure, is easy to miniaturize, and can be easily manufactured. [2] When the upper block 30 and the lower block 40 are stacked to form a laminated block 12, the reaction vessel 10, which processes the substrate S by introducing fluid F from the upper surface 31 of the laminated block 12 and discharges the fluid F from the lower surface 42 of the laminated block 12, can be provided with a simple structure of just two blocks. [3] When an opening 35 is formed in the upper block 30 and the opening 35 is covered with the upper quartz plate 51, or when an opening 45 is formed in the lower block 40 and the opening 45 is covered with the lower quartz plate 52, the upper quartz plate 51 or the lower quartz plate 52 is translucent, so it is possible to irradiate the substrate S with infrared rays or ultraviolet rays through the upper quartz plate 51 or the lower quartz plate 52. Moreover, since the quartz plate has excellent heat resistance, it is also suitable for high-temperature treatment of the substrate S. [4] When a tunnel section 47 is formed inside the lower block 40, the fluid F (liquid) remaining on the lower quartz plate 52 is able to pass through the tunnel section 47 by its own weight and exit through the gas-liquid discharge hole 44, so the fluid F remaining on the lower quartz plate 52 can be easily discharged.

[0040] Finally, a modified version of the reaction vessel 10 will be described based on Figure 3[B]. In the embodiment described above, the gas-liquid discharge groove 43 is formed on the lower surface 42 of the lower block 40, but as in this modified version, the gas-liquid discharge groove 43e may be formed on the upper surface 41 of the lower block 40. In this case, there is no problem if the fluid F is a gas, but if the fluid F is a liquid, the fluid F will remain on the lower quartz plate 52. Therefore, the fluid F remaining on the lower quartz plate 52 is discharged by operations such as tilting the reaction vessel 10. In addition, the gas-liquid discharge groove 43e is positioned so as not to come into contact with the gas-liquid supply groove 33 of the upper block 30 in order to avoid communication with the gas-liquid supply groove 33.

[0041] <Examples> An embodiment that further elaborates on the above-described embodiment will be explained with reference to Figures 4 to 6. However, in this embodiment, the same reference numerals are used for parts that are substantially the same as in the above-described embodiment, and redundant explanations will be omitted. In each figure, if there are multiple identical parts, only one will be given a reference numeral. Also, although the connecting means 60 is not shown in Figures 4 to 6, it is assumed that the connecting means 60 is present in this embodiment as well.

[0042] As shown in the exploded perspective view of Figure 4, the reaction vessel 10 of this embodiment has a structure in which the upper quartz plate 51, upper block 30, substrate holder 20, lower block 40, and lower quartz plate 52 are stacked from top to bottom. The upper block 30 and lower block 40 are stacked to form a laminated block 12. The lower quartz plate 52 and upper quartz plate 51 are disc-shaped, and the rest are rectangular plates.

[0043] The upper surface 31 of the upper block 30 has a circular opening 35 in the center and an annular stepped portion 36 surrounding the opening 35. The opening 35 is sealed when the upper quartz plate 51 is fitted into the stepped portion 36. In addition, six gas-liquid supply holes 34 and two gas supply holes 39 are formed on the upper surface 31 of the upper block 30. A circular opening 25 is formed in the center of the rectangular plate-shaped substrate holder 20, and four semicircular or flattened semiconical projections 23 (only one is shown) are formed in the opening 25.

[0044] The upper surface 41 of the lower block 40 has a recess 16 in the center, consisting of a rectangular plate-shaped space, and gas-liquid discharge grooves (not shown) around the recess 16. An opening 45 is formed on the bottom surface of the recess 16. The substrate holder 20 fits snugly into the recess 16. One side of the recess 16 is open, which serves as the holder insertion / removal opening 14. With the substrate holder 20 inserted into the recess 16 through the holder insertion / removal opening 14, the opening 14 is sealed by the retaining plate 70. The retaining plate 70 consists of a first retaining plate 71 that contacts the laminated block 12 and a second retaining plate 72 that supports the first retaining plate 71. The laminated block 12, the substrate holder 20, and the first retaining plate 71 are made of synthetic resin such as PTFE, and the second retaining plate 72 is made of metal such as stainless steel or aluminum.

[0045] Figure 5, an exploded perspective view, shows the reaction vessel 10 in an inverted state. Similar to the upper surface 31 of the upper block 30 described above, the lower surface 42 of the lower block 40 has a circular opening 45 in the center and an annular stepped portion 46 surrounding the opening 45. The opening 45 is sealed by fitting the lower quartz plate 52 into the stepped portion 46. In addition, two gas-liquid discharge holes 44 are formed on the lower surface 42 of the lower block 40.

[0046] A gas-liquid supply groove (not shown) is formed on the lower surface 32 of the upper block 30. An O-ring 76 is provided on the side of the first retaining plate 71 that contacts the laminated block 12 to improve airtightness.

[0047] As shown in Figure 6, the assembled reaction vessel 10 has the appearance of a rectangular plate (flat rectangular parallelepiped). An example of the overall dimensions excluding the connecting means 60 is a width of 300-500 mm, a depth of 150-250 mm, and a height of 20-50 mm. In this embodiment, a holder insertion / removal opening 14 is provided on the side surface 13 of the stacked block 12. The side surface 13 of the stacked block 12 is the surface connecting the upper surface 31 of the upper block 30 and the lower surface 42 of the lower block 40. The holder insertion / removal opening 14 is one side of a recess 16 which is a rectangular plate-shaped space capable of accommodating a rectangular plate-shaped substrate holder 20, so the substrate holder 20 can be freely inserted into and removed from the recess 16.

[0048] The procedure for placing the substrate holder 20 into the reaction vessel 10 is as follows. First, as shown in Figure 6[A], the substrate S is placed on the four protrusions 23 of the substrate holder 20. The substrate S is, for example, a disc-shaped silicon wafer. In this state, the substrate holder 20 is inserted horizontally into the reaction vessel 10 through the holder insertion / removal opening 14 on the side surface 13 of the lamination block 12. Next, as shown in Figure 6[B], the four screws 73 are screwed into the screw holes 74 of the lamination block 12 through the through holes 75 of the retaining plate 70. This seals the holder insertion / removal opening 14 with the substrate holder 20 housed in the recess 16. After that, the process proceeds to the substrate processing step shown in Figure 1[B]. The procedure for removing the substrate holder 20 from the reaction vessel 10 is the reverse of the procedure described above.

[0049] According to this embodiment, by inserting and removing the substrate holder 20 horizontally from the side surface 13 of the stacking block 12, handling the substrate S is easier compared to inserting and removing the substrate S vertically, because it does not have to work against gravity. Therefore, it can accommodate the increasing size of substrates S in recent years.

[0050] Next, the upper block 30 will be described in more detail based on Figure 7. Figure 7[A] is a detailed plan view of the upper block 30, and Figure 7[B] shows the cross-section along line 7B-7B in Figure 7[A], i.e., the gas-liquid supply groove 33, etc. The upper block 30 may have a projection 37 on the stepped portion 36, a venturi flow path 38 as a gas-liquid supply groove, and a gas supply hole 39 as a gas-liquid supply hole.

[0051] The projection 37 is formed on the stepped portion 36 and, when viewed from above, is linear in shape, surrounding the opening 35. Since the opening 35 is circular, the projection 37 is circumferential. The cross-section of the projection 37 is triangular, and its vertex is easily deformed by pressure. Therefore, when the projection 37 is pressed by the upper quartz plate 51, the opening 35 is sealed. In other words, the projection 37 acts as an O-ring. Thus, instead of using an O-ring, the projection 37 can be formed by machining the upper block 30, reducing the number of parts and further simplifying the structure. The projection 37 is formed simultaneously when the stepped portion 36 is formed on the lower surface 32 of the upper block 30.

[0052] The Venturi flow path 38 has a flow path narrowing section 38b where the flow path cross-sectional area is reduced, a flow path expanding section 38a where the flow path cross-sectional area is increased, and a throat section 38c located between the flow path narrowing section 38b and the flow path expanding section 38a where the flow path cross-sectional area is smallest. The gas supply hole 39 communicates with the Venturi flow path 38 via a gas supply groove 39a. One end of the gas supply groove 39a communicates with the throat section 38c, and the other end communicates with the gas supply hole 39. The Venturi flow path 38 and the gas supply groove 39a are formed on the lower surface 32 of the upper block 30, similar to the gas-liquid supply groove 33.

[0053] The Venturi channel 38 generates a microbubble liquid as the fluid F. A microbubble liquid is a liquid such as water into which microbubbles (bubbles with a diameter of 1 to 100 μm) are blown. In the Venturi channel 38, a liquid (such as water) mixed with a gas (such as air or ozone) supplied from the gas supply hole 39 is passed through the narrowest throat section 38c at a speed reaching the speed of sound. This generates a shock wave, causing bubble collapse and obtaining fine bubbles downstream of the throat section 38c. Because microbubbles have a cleaning effect that can powerfully remove oil stains and other contaminants and separate them by flotation, they are used in the semiconductor field for photoresist removal, semiconductor wafer cleaning, and oil-water separation in wastewater treatment.

[0054] Next, the lower block 40 and the substrate holder 20 will be described in more detail based on Figure 8. Figure 8[A] is a detailed plan view of the lower block 40 and the substrate holder 20, and Figure 8[B] shows the cross-section along line 7B-7B in Figure 8[A], i.e., the gas-liquid discharge groove 43, etc.

[0055] O-ring grooves 48a and 48b may be formed on the upper surface 41 of the lower block 40. A total of eight O-ring grooves 48a are formed in positions surrounding the gas-liquid discharge groove 43 of the lower block 40 and the gas-liquid supply groove 33 (including the venturi flow path 38) of the upper block 30. In addition, O-ring grooves 48b are formed in positions surrounding the entirety of the O-ring grooves 48a. By inserting O-rings 49a and 49b into the O-ring grooves 48a and 48b on the upper surface 41 of the lower block 40, and then stacking the upper block 30 on top with its lower surface 32 facing downwards, a laminated block 12 is obtained. The double O-ring grooves 48a and 48b and the O-rings 49a and 49b have the effect of improving the airtightness of the laminated block 12. A projection 37 similar to that of the upper block 30 may also be formed on the stepped portion 46.

[0056] The circuit board holder 20 may have grooves 26 or holes 27 formed therein for removing the circuit board holder 20 from the recess 16 using a tool such as tweezers. By gripping the groove 26 with a tool such as tweezers or hooking the tool into the hole 27, the circuit board holder 20 can be easily removed by pulling it horizontally from the holder insertion / removal opening 14.

[0057] Next, the method for forming the tunnel section 47 in this embodiment will be described. In this embodiment, the method of the second example (Figure 3[A2]) described in the embodiment is adopted. Here, as shown in Figures 9[A1][B1], the opening 45, the stepped section 46, and the recessed section 16 are shown as already formed in the lower block 40. However, the opening 45, the stepped section 46, and the recessed section 16 may be formed at the same time as or after the process of forming the tunnel section 47, as will be described in the following explanation. Note that in partial plan views such as Figure 9[A1], the curves and diagonal lines in the 8B-8B line portion of Figure 8[A] have been simplified by converting them into straight lines in the left, right, up, and down directions.

[0058] First, as shown in Figure 9[A2][B2], in the process of machining the lower surface 42 side of the lower block 40, a groove 43c that will become the gas-liquid discharge groove 43 is formed. At this time, a stepped portion 46 and an opening 45 may be formed at the same time. Next, as shown in Figure 10[A1][B1], in the process of machining the upper surface 41 side of the lower block 40, a groove 47c that will become the tunnel portion 47 is formed. At this time, a recess 16 and an opening 45 may be formed at the same time. Next, as shown in Figure 10[A2][B2], in the process of machining the upper surface 41 side of the lower block 40, a hollowed-out portion 40c is formed. The hollowed-out portion 40c is a plate-shaped space that is slightly larger than the groove 47c when viewed from above and has a depth that reaches the groove 47c. In parallel with this, as shown in Figure 10[A2][B2], a fitted block 40d is prepared. The fitted block 40d is a plate of a size corresponding to the hollowed-out portion 40c. Then, by fitting the interlocking block 40d into the hollowed-out section 40c, the upper surface 41d of the interlocking block 40d and the upper surface 41 of the lower block 40 become flush, and the interlocking block 40d is integrated with the lower block 40 as shown in Figure 11[A1][B1]. For this fitting, for example, press-fitting or adhesive may be used, but interlocking protrusions 37 (Figure 7) may be formed on the interlocking block 40d or the hollowed-out section 40c. Finally, as shown in Figure 11[A2][B2], by drilling gas-liquid discharge holes 44 in the lower surface 42 of the lower block 40, the gas-liquid discharge groove 43 and tunnel section 47 are completed. Note that the gas-liquid discharge holes 44 may be formed simultaneously with the other parts in the process of machining the lower surface 42 of the lower block 40 as described above.

[0059] Figure 12 shows the relationship between the tunnel section 47 and the lower quartz plate 52. In this embodiment as well, the gas-liquid discharge groove 43 includes the tunnel section 47. The tunnel section 47 has a bottom surface 47x that extends from the upper surface 521 of the lower quartz plate 52 fitted into the stepped section 46, through the interior of the lower block 40, to the gas-liquid discharge hole 44. The bottom surface 47x is at the same height as or lower than the upper surface 521 of the lower quartz plate 52 within the stepped section 46. Therefore, the fluid F remaining on the upper surface 521 of the lower quartz plate 52 is released by its own weight through the tunnel section 47 and out through the gas-liquid discharge hole 44 on the lower surface 42 of the lower block 40.

[0060] Next, a modified version of the reaction vessel 10 of this embodiment will be described based on Figure 13. In the embodiment shown in Figure 6, a screw 73 is used to close the holder insertion / removal opening 14 of the reaction vessel 10 with a retaining plate 70, whereas in this modified version, a holder insertion / removal device 80 is used. The holder insertion / removal device 80 is a device for horizontally inserting and removing the substrate holder 20 into and out of the reaction vessel 10, and is equipped with drive units 81 and 82. The drive units 81 and 82 are linearly moving machines such as air cylinders and electromagnetic solenoids, and each has rods 83 and 84. One side of the retaining plate 70 is fixed to the tip of the rod 83 of the drive unit 81, and the other side of the retaining plate 70 is fixed to the substrate holder 20. Therefore, the drive unit 81 can insert and remove the substrate holder 20 horizontally into and out of the reaction vessel 10 by extending and retracting the rod 83 in the horizontal direction. The rod 84 of the drive unit 82 consists of, for example, four rods, and the tips are needle-shaped. The drive unit 82 can remove the substrate S from the substrate holder 20 or place the substrate S on the substrate holder 20 by extending and retracting the rod 84 in the vertical direction.

[0061] As shown in Figure 13[A], when the substrate holder 20 is in the reaction vessel 10, the rod 83 of the drive unit 81 is extended. When the rod 83 of the drive unit 81 is retracted from this state, as shown in Figure 13[B], the substrate holder 20 is pulled out horizontally from the reaction vessel 10. The lower surface S2 of the substrate S is exposed through the opening 25 of the substrate holder 20, for example, as shown in Figure 6[A]. Therefore, as shown in Figure 13[C], when the rod 84 of the drive unit 82 is extended, the tip of the rod 84 pushes up the lower surface S2 of the substrate S, and the substrate S is removed from the substrate holder 20. The substrate S removed from the substrate holder 20 is transported to the next process. The procedure for putting the substrate holder 20 into the reaction vessel 10 is the reverse of the procedure described above. According to this modified example, the horizontal insertion and removal of the substrate holder 20 from the reaction vessel 10, and the attachment and removal of the substrate S to the substrate holder 20 can be automated by the holder insertion / removal device 80, thereby improving work efficiency.

[0062] The other configurations, functions, and effects of this embodiment are the same as those of the previously described embodiments. The functions and effects of the reaction vessel 10 in the previously described embodiments and this embodiment can be summarized as follows.

[0063] a. Since the processing chamber (openings 35, 45) is constructed using two plate-like materials (upper block 30 and lower block 40), complex chemical supply and discharge channels (gas-liquid supply groove 33 and gas-liquid discharge groove 43) can be manufactured simply and inexpensively. Fluorine-based resins such as PTFE are suitable as the plate-like material when using the chemical solution.

[0064] b. For example, a silicon wafer substrate S can be wet-cleaned, heated and dried with lamps 53 and 54, and then oxidized by introducing ozone. For wet cleaning, ammonia or hydrochloric acid mixed with hydrogen peroxide can be used, for example. In this way, a dry process can be performed immediately after the wet process. Therefore, compared to performing the wet and dry processes in separate devices, there are no problems such as oxidation or surface contamination that occur between the wet and dry processes. Furthermore, by strengthening the sealing and creating a structure that can be processed under reduced pressure, chemical treatment and reactive gas treatment can be performed continuously.

[0065] c. Because it is easy to miniaturize, the volume of the processing chamber (openings 35, 45) can be reduced to, for example, 1 L or less, enabling immersion treatment with a small amount of chemical solution. Similarly, because it is easy to miniaturize, the processing chamber (openings 35, 45) can be easily enclosed, allowing it to be used even with chemical solutions that easily vaporize (for example, supersaturated chemical solutions).

[0066] d. By constructing the upper and lower surfaces of the processing chamber (openings 35, 45) with quartz (upper quartz plate 51 and lower quartz plate 52), energy ranging from infrared to ultraviolet or by high-frequency induction can be supplied to the substrate S. Furthermore, the novel reaction process resulting from the supply of energy can be observed visually or by camera through the quartz.

[0067] e. By supplying fluid F to the substrate S from multiple gas-liquid supply grooves 33 with a time difference controlled by valves, in-plane uniformity of gas-liquid supply can be ensured without a rotating mechanism. In addition, a venturi channel 38 can be incorporated as a gas-liquid supply groove 33, thereby providing a stirring effect for the fluid F.

[0068] f. Unlike conventional single-wafer cleaning, cleaning is possible without rotational movement. Therefore, even for objects to be cleaned (corresponding to the substrate S), such as MEMS (micro-electromechanical systems), which require delicate cleaning, a jig that can be set in the substrate holder 20 can be used.

[0069] <Other> Although the present invention has been described above with reference to the above embodiments and examples, the present invention is not limited to the above embodiments and examples. For example, the substrate is not limited to semiconductor wafers, but can also be an insulator, a metal or other substrate. Various modifications can be made to the configuration and details of the present invention that can be understood by those skilled in the art, and such modified configurations and details are also included within the technical scope of the present invention. [Explanation of Symbols]

[0070] 10…Reaction vessel, 12…Laminated block, 13…Side view, 14…Holder insertion / removal port, 16…Recess, 20…Substrate holder, 23…Protrusion, 25…Opening, 26…Groove, 27…Hole, 30…Upper block, 31…Top surface, 32…Bottom surface, 33…Gas-liquid supply groove, 34…Gas-liquid supply hole, 35…Opening, 36…Stepped section, 37…Protrusion, 38…Venturi flow path, 38a…Flow path enlargement section 38b...flow path narrowing section, 38c...throat section, 39...gas supply hole, 39a...gas supply groove, 40...lower block, 41...top surface, 42...bottom surface, 43...gas-liquid discharge groove, 44...gas-liquid discharge hole, 45...opening, 46...stepped section, 47...tunnel section, 47x...bottom surface, 48a,48b...grooves for O-rings, 49a,49b...O-rings, 40a,40c...cut-out sections, 40b ,40d…Inset block, 41b,41d…Upper surface, 42b,42d…Lower surface, 43a,43c…Grooves that will become gas-liquid discharge grooves, 47b,47c…Grooves that will become tunnel sections, 44a…Hole that will become gas-liquid discharge holes, 43e…Gas-liquid discharge groove, 51…Upper quartz plate, 52…Lower quartz plate, 521…Upper surface, 53,54…Lamp, 60…Connecting means, 61…Upper plate, 63…Opening, 65… 62... through hole, 64... bottom plate, 66... ​​through hole, 67... bolt, 68... nut, 69... insertion hole, 70... retaining plate, 71... first retaining plate, 72... second retaining plate, 73... screw, 74... screw hole, 75... through hole, 76... O-ring, 80... holder insertion / removal device, 81, 82... drive unit, 83, 84... rod, S... substrate, S1... top surface, S2... bottom surface, F... fluid

Claims

1. In a reaction vessel for processing a substrate by supplying a liquid or gaseous fluid, A substrate holder on which the aforementioned substrate is placed, A laminated block made by stacking multiple plate-shaped blocks that have flat surfaces on both sides, It comprises connecting means for connecting multiple blocks, Multiple blocks have grooves that serve as fluid channels and recesses that accommodate the substrate holder formed by cutting the blocks. The reaction vessel is characterized in that the recess communicates with the upper and lower sides of the substrate when the substrate holder is housed within it.

2. When both sides of the aforementioned block are considered the top and bottom surfaces, The stacked block comprises multiple blocks, an upper block and a lower block, and is stacked so that the lower surface of the upper block and the upper surface of the lower block face each other. The recess is formed on the lower surface of the upper block or the upper surface of the lower block. A gas-liquid supply groove is formed on the lower surface of the upper block, which serves as a fluid passage and communicates with the recess, and a gas-liquid supply hole is formed on the upper surface of the upper block, which communicates with the gas-liquid supply groove. A gas-liquid discharge groove is formed on the upper or lower surface of the lower block, which serves as a fluid passage and communicates with the recess, and a gas-liquid discharge hole is formed on the lower surface of the lower block, which communicates with the gas-liquid discharge groove. The reaction vessel according to claim 1, characterized in that the fluid supplied from the gas-liquid supply hole reaches the recess through the gas-liquid supply groove, is used for processing the substrate in the recess, and is discharged from the gas-liquid discharge hole through the gas-liquid discharge groove.

3. The reaction vessel according to claim 2, wherein the substrate holder has an opening that penetrates both sides thereof and a projection formed within the opening, and the substrate is held in a state in which at least one of the sides of the substrate is exposed by placing the substrate on the projection.

4. The reaction vessel according to claim 3, wherein a holder insertion / removal opening is formed on the side surface of the stacked block, which is the surface connecting the upper surface of the upper block and the lower surface of the lower block, allowing the substrate holder to be inserted into and removed from the recess.

5. The device is provided for horizontally inserting and removing the substrate holder from the reaction vessel through the holder insertion / removal opening, The substrate holder places the substrate on the projection with both sides of the substrate exposed. The device comprises a first rod, a second rod, a first drive unit, and a second drive unit. The first rod has the substrate holder fixed to its tip, The first drive unit is capable of horizontally inserting and removing the substrate holder into the reaction vessel by extending and retracting the first rod in the horizontal direction. The second rod is such that its tip can contact the lower surface of the substrate when the substrate holder is horizontally withdrawn from the reaction vessel. The reaction vessel according to claim 4, wherein the second drive unit is capable of removing the substrate from the substrate holder or placing the substrate on the substrate holder by extending and retracting the second rod in the vertical direction.

6. An opening is formed in the upper block or the lower block that faces the exposed surface of the substrate and penetrates the upper surface and the lower surface, The reaction vessel according to claim 2, further comprising a quartz plate that closes the opening.

7. A stepped portion of a certain depth is formed on the lower surface of the lower block into which the quartz plate is fitted. The gas-liquid discharge groove formed in the lower block includes a tunnel portion formed inside the lower block. The tunnel section has a bottom surface extending from the upper surface of the quartz plate fitted into the stepped section to the gas-liquid discharge hole, The bottom surface is at the same height as or lower than the top surface of the quartz plate. The reaction vessel according to claim 6, wherein the fluid remaining on the upper surface of the quartz plate is discharged by its own weight through the bottom surface of the tunnel section and out of the gas-liquid discharge hole on the lower surface of the lower block.

8. Linear projections are formed on the upper block or the lower block so as to surround the opening by cutting the upper block or the lower block. The reaction vessel according to claim 6, wherein the projection acts as an O-ring, and the opening is sealed when the quartz plate presses against the projection.

9. The gas-liquid supply groove is provided with a groove-shaped venturi channel having a throat section with the smallest channel cross-sectional area between a channel narrowing section where the channel cross-sectional area is reduced and a channel widening section where the channel cross-sectional area is increased. The reaction vessel according to any one of claims 2 to 8, wherein the gas supply hole is a gas supply hole communicating with the throat portion.

10. A method using the reaction vessel described in any one of claims 2 to 8, A fluid supply pipe is connected to each of the multiple gas-liquid supply holes, Each of the aforementioned pipes is equipped with a manual or electromagnetic valve. A method for using a reaction vessel, characterized by supplying the fluid to the substrate by arbitrarily opening and closing a plurality of the valves at different time intervals.

11. A method for manufacturing the reaction vessel described in Claim 7, The upper and lower surfaces of the lower block are cut to form grooves that will become the gas-liquid discharge grooves and holes that will become the gas-liquid discharge holes, The upper surface of the lower block is cut to form a hollowed-out section above the groove that will become the gas-liquid discharge groove and the hole that will become the gas-liquid discharge hole. A fitting block of a size corresponding to the aforementioned cutout is prepared, and the lower surface of the fitting block is cut to form a groove that will become the tunnel portion. A method for manufacturing a reaction vessel, characterized in that the upper surface of the fitting block and the upper surface of the lower block are flush with each other, and the fitting block is fitted into the hollowed-out portion to form the gas-liquid discharge groove, the gas-liquid discharge hole, and the tunnel portion.

12. A method for producing the reaction vessel described in Claim 7, The upper and lower surfaces of the lower block are cut to form grooves that will serve as gas and liquid discharge grooves. The upper surface of the lower block is cut to form the groove that will become the tunnel section. The upper surface of the lower block is cut to form a hollowed-out section above the groove that will become the tunnel section. A fitting block of a size corresponding to the cutout portion is prepared, and the fitting block is fitted into the cutout portion such that the upper surface of the fitting block and the upper surface of the lower block are flush, thereby forming the gas-liquid discharge groove and the tunnel portion. A method for manufacturing a reaction vessel, characterized by cutting the lower surface of the lower block to form the gas-liquid discharge hole.

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