Substrate processing equipment

Abstract

The present invention relates to a substrate processing apparatus including a chamber that provides a processing space, a lid that covers the top of the chamber, a substrate support unit that supports at least one substrate and rotates around a rotation axis so that the substrate passes through a photographing area, a gas injection unit that injects processing gas toward the substrate support unit, an area photographing unit that photographs the photographing area to obtain a thermal image of the photographing area, and a calculation unit that calculates temperature data of the substrate from the thermal image.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing steps such as a deposition step and an etching step on a substrate.

Background Art

[0002] Generally, in order to manufacture solar cells, semiconductor elements, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this reason, processing steps for the substrate are performed, such as a deposition step of depositing a thin film of a specific substance on the substrate, a photo process of selectively exposing the thin film using a photosensitive substance, and an etching step of removing the thin film of the selectively exposed portion to form a pattern. Such processing steps for the substrate are performed by a substrate processing apparatus.

[0003] A substrate processing apparatus according to the prior art includes a substrate support unit that supports a substrate and a gas injection unit that injects a processing gas toward the substrate support unit. The substrate support unit rotates about a rotation axis. When the substrate support unit rotates about the rotation axis, the substrate supported by the substrate support unit passes under the gas injection unit. In this process, a processing step for the substrate is performed using the processing gas injected by the gas injection unit.

[0004] In such a processing step, the temperature of the substrate acts as an important factor. In order to reflect the temperature of the substrate in the processing step, conventionally, before performing the processing step, the temperature distribution of the substrate was obtained using a thermocouple wafer (TC Wafer).

[0005] Conventional substrate processing equipment could not obtain the temperature distribution of the substrate during the processing step. Therefore, the processing step was performed by predicting the temperature distribution of the substrate using the temperature distribution obtained before the processing step. However, due to the many variables that occur during the processing step, there was inevitably a large difference between the predicted temperature distribution of the substrate and the actual temperature distribution of the substrate during the processing step. As a result of this difference, conventional substrate processing equipment had the problem of being unable to ensure uniformity in the quality of the substrate after the processing step was completed. [Overview of the project] [Problems that the invention aims to solve]

[0006] The present invention was devised to solve the problems described above, and aims to provide a substrate processing apparatus that can improve the uniformity of the quality of substrates after the processing steps are completed. [Means for solving the problem]

[0007] To solve the problems described above, the present invention may include the following configuration.

[0008] The substrate processing apparatus according to the present invention may include a chamber that provides a processing space, a lid that covers the top of the chamber, a substrate support unit that supports at least one substrate and rotates around a rotation axis so that the substrate passes through a shooting area, a gas injection unit that injects processing gas toward the substrate support unit, a region imaging unit that photographs the shooting area and obtains a thermal image of the shooting area, and a calculation unit that calculates substrate temperature data from the thermal image. [Effects of the Invention]

[0009] According to the present invention, the following effects can be obtained.

[0010] The present invention is embodied in a way that allows for the calculation of substrate temperature data during the processing steps performed on the substrate. This enables the present invention to improve the uniformity of the quality of the substrate after the processing steps are completed.

[0011] The present invention is embodied in a system that can capture a region via a region imaging unit and calculate temperature data for a substrate. This improves the ease of alignment of the region imaging unit and reduces the time required for alignment. Therefore, the present invention can increase productivity for substrates after the processing step is completed by increasing the operating rate. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic side cross-sectional view of the substrate processing apparatus according to the present invention. [Figure 2] This is a schematic plan view showing an embodiment of the gas injection section in the substrate processing apparatus according to the present invention. [Figure 3] This is a schematic plan view showing an embodiment of the gas injection section in the substrate processing apparatus according to the present invention. [Figure 4] This is a conceptual plan view showing the process of acquiring a thermal image in the substrate processing apparatus according to the present invention. [Figure 5] This is a schematic block diagram of a substrate processing apparatus according to the present invention. [Figure 6] This is a conceptual plan view showing a thermal image with a first measurement line and a second measurement line displayed in the substrate processing apparatus according to the present invention. [Figure 7] A graph showing first candidate data for location-specific temperature of the substrate corresponding to a first measurement line and second candidate data for location-specific temperature of the substrate corresponding to a second measurement line, in a substrate processing apparatus according to the present invention. [Modes for carrying out the invention]

[0013] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the attached figures.

[0014] Referring to Figure 1, the substrate processing apparatus 1 according to the present invention performs processing steps on a substrate 100. The substrate 100 may be a glass substrate, a silicon substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform processing steps such as a deposition step of depositing a thin film onto the substrate 100, and an etching step of removing a portion of the thin film deposited on the substrate 100. In the following description, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the above deposition step will be used as a basis, but it will be obvious to those skilled in the art to which the present invention belongs that embodiments in which the substrate processing apparatus 1 according to the present invention performs different processing steps, similar to the etching step, etc., will be derived from this.

[0015] The substrate processing apparatus 1 according to the present invention may include a substrate support unit 2, a lid 3, a gas injection unit 4, a region imaging unit 5, and a calculation unit 6.

[0016] Referring to Figure 1, the substrate support 2 supports the substrate 100. The substrate support 2 can be coupled inside a chamber 1a that provides a processing space in which the processing step is carried out. The processing space can be located between the substrate support 2 and the lid 3. A substrate inlet / outlet (not shown) can be coupled to the chamber 1a. The substrate 100 can be loaded into the chamber 1a by a loading device (not shown) through the substrate inlet / outlet. When the processing step is completed, the substrate 100 can be unloaded (not shown) by an unloading device (not shown) through the substrate inlet / outlet to the outside of the chamber 1a. An exhaust unit 1b can be coupled to the chamber 1a for exhausting gases and the like present in the processing space to the outside.

[0017] The substrate support unit 2 can rotate about a rotation axis 2a. As the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 supported by the substrate support unit 2 rotates about the rotation axis 2a and passes below the gas injection unit 4. During this process, the processing gas injected by the gas injection unit 4 can perform a processing step on the substrate 100. The substrate support unit 2 can support at least one substrate 100. When the substrate support unit 2 supports multiple substrates 100, the substrates 100 may be arranged to be spaced apart from each other around the rotation axis 2a. A rotating device (not shown) that provides rotational force can be connected to the substrate support unit 2.

[0018] Referring to Figures 1 to 3, the lid 3 covers the upper part of the chamber 1a. The lid 3 may be positioned at an upper distance from the substrate support portion 2. Figures 2 and 3 show that the lid 3 is formed in a hexagonal structure, but it is not limited to this, and the lid 3 may be formed in a polygonal structure such as an octagon, a cylindrical structure, or an elliptical structure. The chamber 1a may be formed in a form corresponding to the lid 3.

[0019] Referring to Figures 1 to 3, the gas injection unit 4 injects processing gas toward the substrate support unit 2. The gas injection unit 4 can be coupled to the lid 3. Although not shown in the figures, the gas injection unit 4 can also be coupled to the chamber 1a so as to be positioned between the lid 3 and the substrate support unit 2.

[0020] The gas injection unit 4 can include a first gas injection module 41 that injects a first gas and a second gas injection module 42 that injects a second gas. The first gas can be a source gas, and the second gas can be a reactant gas. The first gas injection module 41 and the second gas injection module 42 can be arranged spaced apart from each other around the rotation axis 2a. Accordingly, when the substrate support unit 2 rotates around the rotation axis 2a, while the substrate 100 rotates around the rotation axis 2a, the substrate 100 sequentially passes under the first gas injection module 41 and under the second gas injection module 42. Thereby, a processing step on the substrate 100 can be performed using the first gas and the second gas. The gas injection unit 4 can also include a plurality of the first gas injection modules 41. The gas injection unit 4 can also include a plurality of the second gas injection modules 42.

[0021] The gas injection unit 4 may include a purge gas injection module 43 that injects purge gas. The purge gas injection module 43 can demarcate a first region where the first gas is injected and a second region where the second gas is injected by injecting the purge gas. This prevents the first gas and the second gas from mixing with each other between the first and second regions. When the substrate support unit 2 rotates around the rotation axis 2a, the substrate 100 rotates around the rotation axis 2a and passes under the purge gas injection module 43. During this process, any residual gas remaining on the substrate 100 can be purged with the purge gas. As shown in Figure 2, the purge gas injection module 43 can be formed in a dumbbell shape that crosses between the first gas injection module 41 and the second gas injection module 42. As shown in Figure 3, the purge gas injection module 43 can also be formed in a Y-shape. Although not shown in the diagram, the purge gas injection module 43 can be formed in various configurations depending on the number of first gas injection modules 41, the number of second gas injection modules 42, and so on. The gas injection unit 4 can also include multiple purge gas injection modules 43.

[0022] Referring to FIGS. 1 to 4, the area imaging unit 5 captures the imaging area 200 to obtain a thermal image of the imaging area 200. The thermal image is an area image of the imaging area and includes temperature. The area imaging unit 5 can be a camera that uses infrared rays (IR, Infrared ray) to obtain a thermal image of the imaging area 200. The substrate support unit 2 can rotate about the rotation axis 2a so that the substrate 100 passes through the imaging area 200. Thereby, the substrate processing apparatus 1 according to the present invention can obtain the temperature distribution of the substrate 100 while the processing step is being performed, so that the process conditions can be changed according to the temperature distribution of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the quality of the substrate after the above processing step is completed. In addition, the substrate processing apparatus 1 according to the present invention captures an area through the area imaging unit 5 to obtain the temperature distribution of the substrate 100. Compared with the comparative example of obtaining the temperature distribution of the substrate 100 through a line scanner, there are the following advantages. [[ID=I]]

[0023] First, in the case of the comparative example of obtaining the temperature distribution of the substrate 100 through a line scanner, based on the position of the substrate 100, the position of the line scanner must be accurately aligned. As a result, the comparative example not only has difficulty in aligning the line scanner during initial setting, but also takes a considerable amount of time for the alignment work of the line scanner, resulting in the drawback of delaying the time required for initial setting. Such a drawback also applies when reinstalling after maintenance of the line scanner.

[0024] In this regard, in the embodiment in which a region is photographed via the region imaging unit 5 to obtain the temperature distribution of the substrate 100, when compared with the comparative example, a larger error range is realized for the alignment work of the region imaging unit 5 with respect to the position of the substrate 100. This is because the region imaging unit 5 photographs a region and obtains the thermal image, so the error range can be corrected through correction within the thermal image. Therefore, the substrate processing apparatus 1 according to the present invention has the advantage of reducing the time required for the alignment work of the region imaging unit 5 compared with the comparative example, thereby reducing the time required for initial setting and the time required for re-mounting. As a result, the substrate processing apparatus 1 according to the present invention can increase productivity for substrates after the above processing steps are completed by increasing the operating rate.

[0025] Secondly, in the comparative example where the temperature distribution of the substrate 100 is obtained via a line scanner, the temperature distribution of the substrate 100 is obtained by measuring a single line by continuously performing point measurements. However, since point measurements are performed while the substrate is rotating, a difference in measurement time occurs between the first measurement point and the last measurement point in the comparative example. Therefore, the accuracy of the temperature distribution of the substrate 100 is reduced in the comparative example.

[0026] In this regard, in the embodiment in which the temperature distribution of the substrate 100 is obtained by photographing a region via the region imaging unit 5, the temperature distribution of the substrate 100 is obtained by acquiring the thermal image in an instant while the substrate is rotating. Therefore, within the thermal image acquired by the region imaging unit 5 in an instant, no difference in measurement time occurs between measurement points. Consequently, the embodiment can improve the accuracy of the temperature distribution of the substrate 100 compared to the comparative example.

[0027] Thirdly, in the comparative example where the temperature distribution of the substrate 100 is obtained via a line scanner, even if point measurements are performed continuously, a different error value is generated for each measurement point due to the peak-to-peak period. Therefore, in the comparative example, the accuracy of the temperature distribution of the substrate 100 is reduced.

[0028] In this regard, in the embodiment in which the temperature distribution of the substrate 100 is obtained by photographing a region via the region imaging unit 5, since the thermal image is obtained in an instant, even if an error value occurs within the thermal image, the same error value occurs for all measurement points. Therefore, the embodiment can improve the accuracy of the temperature distribution of the substrate 100 compared to the comparative example.

[0029] The imaging area 200 can be formed with a first length 210L shorter than the diameter of the substrate 100, based on the direction in which the substrate 100 rotates around the rotation axis 2a. The second length 220L of the imaging area 200, perpendicular to the first length 210L, can be formed to be longer than the diameter of the substrate 100. As a result, the imaging area unit 5 can acquire a thermal image including a portion of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present invention can acquire the temperature distribution for the entire substrate 100 by acquiring multiple thermal image images. Figure 4 shows that the imaging area 200 is formed in a rectangular shape, but is not limited to this, and the imaging area 200 can also be formed in other shapes such as an elliptical shape.

[0030] The region imaging unit 5 can be positioned outside the processing space. In this case, the region imaging unit 5 can acquire a thermal image including the processing space through a measurement hole 300 located within the imaging region 200. As a result, the region imaging unit 5 can acquire a thermal image including the substrate 100 passing below the measurement hole 300.

[0031] The measurement hole 300 can be formed in the gas injection unit 4. In this case, the region imaging unit 5 may be positioned above the gas injection unit 4, corresponding to the measurement hole 300. The measurement hole 300 can be formed in the purge gas injection module 43 of the gas injection unit 4. The measurement hole 300 can be formed to penetrate the purge gas injection module 43. In this case, the measurement hole 300 can be formed at a position spaced apart from the purge hole (not shown) for injecting purge gas into the purge gas injection module 43.

[0032] The measurement hole 300 can also be formed in the lid 3. In this case, the region imaging unit 5 may be positioned on the upper side of the lid 3 corresponding to the measurement hole 300. The measurement hole 300 can be formed to penetrate the lid 3. In this case, the measurement hole 300 may be formed in a portion of the lid 3 where the gas injection unit 4 is not located.

[0033] The measurement hole 300 can be formed to be smaller in size than the imaging area 200. Using Figure 4 as a reference, the measurement hole 300 can be formed to be shorter in length in the vertical direction than the diameter of the substrate 100, and longer in length in the horizontal direction than the diameter of the substrate 100. Here, when the center of the substrate 100 is referenced to a circular rotation path that rotates around the rotation axis 2a, the vertical direction can correspond to the tangential direction to the circular rotation path. The horizontal direction is perpendicular to the vertical direction. Although Figure 4 shows that the measurement hole 300 is formed in a rectangular shape, it is not limited to this, and the measurement hole 300 can also be formed in other shapes such as an elliptical shape.

[0034] Referring to Figures 1 to 7, the calculation unit 6 calculates temperature data of the substrate 100 from the thermal image. The thermal image may display the temperature at each point on the substrate using a corresponding color. The temperature indicated by the color is stored in advance in the calculation unit 6 in the form of a lookup table. By matching this stored data with the thermal image, the calculation unit 6 can calculate temperature data for each point on the substrate.

[0035] The calculation unit 6 may include an extraction module 61 and a calculation module 62.

[0036] The extraction module 61 extracts candidate data for obtaining the temperature data. The extraction module 61 can extract first candidate data (shown in Figure 7a) relating to the temperature at a specific point on the substrate corresponding to a first measurement line (ML1, shown in Figure 6) from the thermal image, and second candidate data (shown in Figure 7b) relating to the temperature at a specific point on the substrate corresponding to a second measurement line (ML2, shown in Figure 6) from the thermal image. The first measurement line (ML1) and the second measurement line (ML2) may be arranged parallel to each other. If the measurement hole 300 is provided, the first measurement line (ML1) and the second measurement line (ML2) may be arranged parallel to the lateral direction of the measurement hole 300. In this case, the first measurement line (ML1) and the second measurement line (ML2) may be arranged spaced apart from each other in the vertical direction of the measurement hole 300. In the graph for the first candidate data in Figure 7a and the graph for the second candidate data in Figure 7b, the horizontal axis can correspond to the length of the substrate 100 passing through the imaging area 200. Thus, the first candidate data and the second candidate data can each consist of the temperature of the substrate 100 at different points.

[0037] The extraction module 61 can determine the distance between the first measurement line (ML1) and the second measurement line (ML2) based on the separation distance between the substrate 100 and the region imaging unit 5. The separation distance between the substrate 100 and the region imaging unit 5 can correspond to the height of the region imaging unit 5 relative to the substrate 100. For example, the extraction module 61 can determine the distance between the first measurement line (ML1) and the second measurement line (ML2) based on the spacing between pixels of the region imaging unit 5, which corresponds to the separation distance between the substrate 100 and the region imaging unit 5. Therefore, the substrate processing apparatus 1 according to the present invention can set the first candidate data based on the first measurement line (ML1) and the second candidate data based on the second measurement line (ML2) to correspond to positions on the substrate 100 that are as close together as possible. Therefore, the substrate processing apparatus 1 according to the present invention can secure sufficient temperature data to confirm the temperature distribution of the substrate 100 even if, when there is a point in either the first candidate data or the second candidate data where the temperature is measured abnormally, the temperature at that point is corrected by referring to the remaining candidate data. For example, the extraction module 61 can extract the first candidate data and the second candidate data using the first measurement line (ML1) and the second measurement line (ML2) which are spaced 0.3 mm apart from each other. In this case, the separation distance between the substrate 100 and the region imaging unit 5 is 300 mm, the region imaging unit 5 acquires the thermal image having a resolution of 640 × 480, and the spacing between pixels in the region imaging unit 5 may be 0.3 mm.

[0038] The extraction module 61 extracts the remaining portion of the thermal image from the thermal image, excluding the portion corresponding to a pre-set temperature or below, as the substrate portion (SA, shown in Figure 6). Using the first measurement line (ML1) and the second measurement line (ML2), it can extract the first candidate data and the second candidate data from the extracted substrate portion (SA). The pre-set temperature can be set in advance by the operator. If the measurement hole 300 is provided, the portion corresponding to a temperature or below the set temperature may be the gas injection unit 4 or the lid 3. Since the temperature of the portion in question is considerably lower than the temperature of the substrate 100 passing below the measurement hole 300, the extraction module 61 can extract the substrate portion (SA) using the set temperature. As a result, the substrate processing apparatus 1 according to the present invention extracts the position of the substrate 100 in the thermal image and then extracts the first candidate data and the second candidate data, thereby improving the accuracy of the work of obtaining the temperature distribution of the substrate 100. Furthermore, the substrate processing apparatus 1 according to the present invention can further increase the allowable error range for the alignment operation of the region imaging unit 5 with respect to the position of the substrate 100, thereby further reducing the time required for the alignment operation of the region imaging unit 5.

[0039] The calculation module 62 can calculate temperature data relating to the temperature of each location on the substrate included in the thermal image using the first candidate data and the second candidate data. The first candidate data and the second candidate data are provided from the extraction module 61 via wired communication, wireless communication, or the like.

[0040] The calculation module 62 can calculate the temperature data by determining the temperature of the remaining candidate data for any point where the temperature exceeds a previously set reference temperature (ST) in either the first candidate data or the second candidate data. The reference temperature (ST) can be considered abnormally high due to noise and can be set in advance by the operator. For example, the calculation module 62 can exclude the point-specific temperatures of the first section (T1) that exceed the reference temperature (ST) from the first candidate data shown in Figure 7a, and determine the point-specific temperatures of the second section (T2) corresponding to the first section from the second candidate data shown in Figure 7b as the point-specific temperatures of that section. Therefore, the substrate processing apparatus 1 according to the present invention can prevent a decrease in the accuracy of the temperature data due to noise.

[0041] The calculation module 62 can calculate the temperature data by determining the average temperature of the first candidate data and the second candidate data for locations where both the first candidate data and the second candidate data are below the reference temperature (ST). For example, the calculation module 62 can determine the average temperature of the location-specific temperatures for the remaining section after removing the first section (T1) from the first candidate data shown in Figure 7a, and the average temperature of the location-specific temperatures for the remaining section after removing the second section (T2) from the second candidate data shown in Figure 7b.

[0042] In this way, the calculation module 62 can calculate the temperature data by determining the temperature of the remaining candidate data if any one of the first candidate data or the second candidate data exceeds the reference temperature (ST), and by determining the temperature of the average of the temperatures of the first candidate data and the second candidate data if both the first candidate data and the second candidate data are below the reference temperature (ST). Therefore, the substrate processing apparatus 1 according to the present invention can further improve the accuracy of the temperature data. On the other hand, if a location occurs where both the first candidate data and the second candidate data exceed the reference temperature (ST), the calculation module 62 can send an alarm to the operator.

[0043] Referring to Figures 1 to 7, the calculation unit 6 can include a generation module 63 and a conversion module 64.

[0044] The generation module 63 uses multiple temperature data to generate an elliptical detection image representing the temperature distribution of the substrate 100. As shown in Figure 4, the region imaging unit 5 acquires a thermal image including a part of the substrate 100 as the substrate 100 rotates and passes through the imaging area 200. The calculation unit 6 can then use the extraction module 61 and the calculation module 62 to calculate temperature data for each of the thermal image. By collecting the temperature data thus calculated, the generation module 63 can generate an elliptical detection image. The reason an elliptical detection image is generated even when the substrate 100 is circular is that the thermal image is acquired as the substrate 100 rotates around the rotation axis 2a. As a result, the outer portion of the substrate 100, which is located on the opposite side of the rotation axis 2a, travels a greater distance than the inner portion of the substrate 100, which is located on the side of the rotation axis 2a. On the other hand, the temperature data can be provided to the generation module 63 from the calculation module 62 via wired communication, wireless communication, or the like.

[0045] The generation module 63 can create the elliptical detection image showing the temperature distribution corresponding to one rotation of the substrate, using the capture time of the thermal image used to calculate the temperature data and the rotation speed of the substrate support unit 2. As a result, even when multiple substrates 100 are supported by the substrate support unit 2 and the temperature data is calculated during the process in which the substrates 100 rotate 360 ​​degrees multiple times around the rotation axis 2a, the generation module 63 can generate the elliptical detection image from the temperature data to which the same substrate 100 belongs when it has rotated the same number of times.

[0046] The conversion module 64 converts the elliptical detection image into a circular detection image corresponding to the substrate 100. This allows the operator to confirm the temperature distribution of the substrate 100 using the temperature distribution displayed in the circular detection image, which is distinguished by color according to temperature. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease of confirming the temperature distribution of the substrate 100 by providing the operator with the circular detection image corresponding to the substrate 100. Although not shown in the figure, the conversion module 64 can provide the circular detection image to a display device (not shown). On the other hand, the elliptical detection image can be provided to the conversion module 64 from the generation module 63 via wired communication, wireless communication, or the like.

[0047] The conversion module 64 calculates the coordinates of each location on the substrate 100 using the rotation speed of the substrate support 2 and the distance from the rotation axis 2a of the substrate support 2 for each location on the substrate 100. The elliptical detection image can then be converted to a circular detection image based on these calculated coordinates. The faster the rotation speed of the substrate support 2, the greater the distance traveled. Furthermore, locations further from the rotation axis 2a move a relatively larger distance. Therefore, the conversion module 64 can calculate the coordinates of each location on the substrate 100 using the rotation speed of the substrate support 2 and the distance from the rotation axis 2a for each location on the substrate 100. In this case, the coordinates of each location on the substrate 100 may correspond to absolute coordinates based on the actual substrate 100. Once the coordinates of each location on the substrate 100 are calculated, the conversion module 64 can convert the image to a circular detection image by adjusting the temperature of each location on the substrate 100 according to the absolute coordinates.

[0048] Referring to Figures 1 to 7, the substrate processing apparatus 1 according to the present invention can be implemented so as to reflect the temperature data calculated by the calculation unit 6 in the process conditions of the processing step. In this case, the substrate processing apparatus 1 according to the present invention can include a temperature adjustment unit 7.

[0049] The temperature control unit 7 adjusts the temperature of the substrate 100 supported by the substrate support unit 2. The temperature control unit 7 can adjust the temperature of the substrate 100 via the substrate support unit 2 by adjusting the temperature of the substrate support unit 2. In this case, the temperature control unit 7 may be installed inside the substrate support unit 2. Although not shown in the figure, the temperature control unit 7 may be implemented to adjust the temperature of the substrate 100 using electricity. In this case, the temperature control unit 7 may be implemented with a heat transfer heater. Although not shown in the figure, the temperature control unit 7 may also be implemented to adjust the temperature of the substrate 100 using a temperature-controlling fluid. In this case, the temperature control unit 7 may include a pipeline provided inside the substrate support unit 2, a pump that supplies the temperature-controlling fluid to the pipeline, and a control unit that adjusts the temperature of the temperature-controlling fluid supplied by the pump to the pipeline.

[0050] The temperature control unit 7 can adjust the temperature of the substrate 100 supported by the substrate support unit 2 to a pre-set processing temperature using the temperature data calculated by the calculation unit 6. The pre-set processing temperature may vary depending on the type of processing step, the type of substrate 100, the type of thin film, etc., and can also be set in advance by the operator.

[0051] On the other hand, the gas injection unit 4 can use the temperature data calculated by the calculation unit 6 to stop injecting gas into the substrate support unit 2 until the temperature of the substrate 100 supported by the substrate support unit 2 is adjusted to the processing temperature. Once the calculation unit 6 confirms that the temperature of the substrate 100 supported by the substrate support unit 2 has been adjusted to the processing temperature, the gas injection unit 4 can start injecting gas into the substrate support unit 2. Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the quality of the substrate after the processing step is completed.

[0052] The present invention described above is not limited to the embodiments and accompanying drawings, and it will be apparent to those with ordinary skill in the art to which the present invention pertains that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention.

Claims

1. A chamber that provides a processing space, A lid that covers the upper part of the chamber, A substrate support part that supports at least one substrate and rotates about a rotation axis so that the substrate passes through a shooting area, A gas injection part that injects a processing gas toward the substrate support part, An area imaging part that images the shooting area to obtain a thermal image of the shooting area, and a calculation part that calculates temperature data of the substrate from the thermal image, The calculation part includes: An extraction module that extracts first candidate data regarding the temperature at each point of the substrate corresponding to a first measurement line from the thermal image, and extracts second candidate data regarding the temperature at each point of the substrate corresponding to a second measurement line parallel to the first measurement line from the thermal image, and A calculation module that calculates temperature data regarding the temperature at each point of the substrate included in the thermal image using the first candidate data and the second candidate data, The first candidate data includes a first temperature corresponding to a first measurement point on the first measurement line, the second candidate data includes a second temperature corresponding to a second measurement point on the second measurement line, and the second measurement point corresponds to the first measurement point, The calculation module: (1) when only the first temperature is higher than a predetermined reference temperature among the first temperature and the second temperature, determines the second temperature as the temperature of the first measurement point; (2) when both the first temperature and the second temperature are below the predetermined reference temperature, determines the average temperature of the first temperature and the second temperature as the temperature of the first measurement point; and (3) when both the first temperature and the second temperature are higher than the predetermined reference temperature, sends out an alarm. A substrate processing apparatus.

2. A measurement hole is formed in the lid at a position within the shooting area, The area imaging part is disposed above the lid, and obtains the thermal image including the substrate passing through the lower side of the measurement hole through the measurement hole. The substrate processing apparatus according to claim 1.

3. The gas injection unit has a measurement hole located within the imaging area. The substrate processing apparatus according to claim 1, wherein the region imaging unit is positioned above the gas injection unit and acquires the thermal image including the substrate passing below the measurement hole through the measurement hole.

4. The substrate processing apparatus according to claim 1, characterized in that the extraction module determines the distance between the first measurement line and the second measurement line based on the separation distance between the substrate and the region imaging unit.

5. The substrate processing apparatus according to claim 1, characterized in that the extraction module extracts the first candidate data and the second candidate data using the first measurement line and the second measurement line separated from each other by a distance of 0.3 mm.

6. The substrate processing apparatus according to claim 1, characterized in that the extraction module extracts the remaining portion from the thermal image, excluding the portion corresponding to a previously set temperature or lower, as the substrate portion, and extracts the first candidate data and the second candidate data from the extracted substrate portion.

7. The calculation unit, A generation module that generates an elliptical detection image representing the temperature distribution of a substrate using multiple temperature data, and The substrate processing apparatus according to claim 1, characterized in that it includes a conversion module that converts the elliptical detection image into a circular detection image corresponding to the substrate.

8. The generation module generates an elliptical calculated image showing the temperature distribution corresponding to one rotation of the substrate, using the capture time of the thermal image used to calculate the temperature data and the rotation speed of the substrate support. The substrate processing apparatus according to claim 7, characterized in that the conversion module calculates the coordinates of each location on the substrate using the rotation speed of the substrate support and the distance from the rotation axis of the substrate support at each location on the substrate, and then converts the elliptical detection image to the circular detection image using the calculated coordinates.

9. The substrate support portion includes a temperature control unit for adjusting the temperature of the substrate supported by the substrate support portion, The substrate processing apparatus according to claim 1, characterized in that the temperature control unit adjusts the temperature of the substrate using the temperature data calculated by the calculation unit.

10. The substrate processing apparatus according to claim 1, characterized in that the gas injection unit stops injecting gas into the substrate support unit until the temperature of the substrate supported by the substrate support unit is adjusted to a previously set processing temperature using the temperature data calculated by the calculation unit.

Images