Heating shield for physical vapor phase deposition chamber

Abstract

[0006] Embodiments of a process shield for use in a PVD chamber are provided herein. In some embodiments, the process shield for use in a process chamber includes a body having a cylindrical shape, the body including an upper portion and a lower portion, the upper portion having an outer lip, the lower portion extending downwardly and radially inward from the upper portion, the outer lip including a plurality of openings for accommodating fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and the lower surface of the outer lip including a plurality of grooves.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment.

Background Art

[0002] Physical vapor deposition (PVD) is a process that can be used to deposit a thin film on a substrate. The PVD process generally involves colliding ions from a plasma with a target containing a source material, thereby sputtering the source material from the target. The released source material is then accelerated towards the substrate to be processed, thereby causing deposition of the source material with or without reaction with other reactants. Deposition of the source material within the PVD chamber involves coating the inner surface of the PVD chamber as well.

[0003] To reduce or prevent unwanted deposition on the inner surface of the PVD chamber, a process kit that can include a number of components can be provided. However, accumulation of deposits on the process kit may require cleaning or replacement. Maintenance of the process kit generally involves removing the process kit from the PVD chamber, chemically etching the process kit, and reinstalling the process kit in the PVD chamber. The inventors propose performing the chemical etching process in-situ. However, certain in-situ cleaning processes may require a high chamber temperature.

[0004] Therefore, the inventors provide herein an improved process kit for high chamber temperature processes.

Summary of the Invention

[0005] Embodiments of process shields for use in PVD chambers are provided herein. In some embodiments, the process shield for use in a process chamber includes a cylindrical body, the body including an upper portion and a lower portion, the upper portion having an outer lip, the lower portion extending downward and radially inward from the upper portion, the outer lip including a plurality of openings for accommodating fasteners, a plurality of alignment slots extending radially inward from the outer surface of the outer lip, and a notched lower peripheral edge, the lower surface of the outer lip including a plurality of grooves.

[0006] In some embodiments, a process kit for use in a process chamber includes a process shield having a cylindrical body with an upper and lower portion, the upper portion having an outer lip, and the lower portion extending downward and radially inward from the upper portion, with a plurality of alignment slots extending radially inward from the outer surface of the outer lip; and a heater ring coupled to the upper portion of the process shield via a plurality of openings in the outer lip, the heater ring including a resistance heating element embedded therein, and the heater ring including a plurality of pin slots corresponding to the locations of the plurality of alignment slots of the process shield.

[0007] In some embodiments, the process chamber includes a chamber body defining an internal volume therein, a target positioned in the internal volume adjacent to the top of the chamber body, a substrate support positioned in the internal volume facing the target, a shield having a cylindrical body extending from the target to the substrate support and having an outer lip, an adapter surrounding the shield having a cooling channel positioned therein, and a heater ring fixed to the outer lip of the shield through a plurality of openings in the outer lip to clamp the adapter between the outer lip and the heater ring.

[0008] Other and further embodiments of this disclosure are described below.

[0009] The embodiments of this disclosure, which are briefly summarized above and discussed in more detail below, can be understood by referring to the exemplary embodiments of this disclosure shown in the accompanying drawings. However, the accompanying drawings show only typical embodiments of this disclosure and should not be considered limiting in scope, as this disclosure may allow for other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic side view of a process chamber according to some embodiments of the present disclosure. [Figure 2] These are partial cross-sectional isometric views of a process chamber according to some embodiments of the present disclosure. [Figure 3] These are partial cross-sectional isometric views of a process chamber according to some embodiments of the present disclosure. [Figure 4] These are partial cross-sectional isometric views of a process chamber according to some embodiments of the present disclosure. [Figure 5] This is an isometric top view of a heater according to some embodiments of the present disclosure. [Figure 6] This is a partial top view of a process shield according to some embodiments of the present disclosure. [Figure 7] This is a partial top view of a process shield according to some embodiments of the present disclosure. [Figure 8] This is a partial bottom view of a process shield according to some embodiments of the present disclosure. [Figure 9] This is a cross-sectional side view of a process shield according to some embodiments of the present disclosure. [Modes for carrying out the invention]

[0011] For ease of understanding, where possible, the same reference numerals are used to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment can be usefully incorporated into other embodiments without further detail.

[0012] Embodiments of process kits for use in PVD chambers are provided herein. The process kit may include a number of components, including a process shield, as described herein. In some embodiments, the process shield is advantageously thermally isolated from adjacent cooling components of the process chamber, such as the water cooling adapter or water cooling sidewall of the process chamber, so that the process shield can be heated to high temperatures (e.g., temperatures of 250 degrees Celsius or higher). In some embodiments, the process shield is advantageously electrically coupled to the cooling adapter or cooling sidewall of the process chamber to electrically ground the process shield.

[0013] Figure 1 shows a schematic side view of a process chamber 100 according to several embodiments of the present disclosure. In some embodiments, the process chamber 100 is a physical vapor deposition (PVD) chamber. Examples of PVD chambers suitable for use in the present disclosure include the APPLIED ENDURA IMPULSE® and other PVD processing chambers commercially available from Applied Materials, Inc. of Santa Clara, California. Other processing chambers from Applied Materials, Inc. or other manufacturers can also benefit from the apparatus of the present invention disclosed herein.

[0014] The process chamber 100 includes a chamber wall 106 surrounding an internal volume having a processing volume 108 and an unprocessed volume 109. The chamber wall 106 includes side walls 116, a low wall 126, and a ceiling 124. The ceiling 124 may be a chamber lid or similar cover for sealing the internal volume. The process chamber 100 may be a standalone chamber or part of a multi-chamber platform (not shown) such as one of the ENDURA®, CENTURA®, or PRODUCER® lines of a process system having a cluster of interconnected chambers connected by a substrate transfer mechanism (e.g., a substrate transfer robot) for transferring substrates 104 between various chambers. The process chamber 100 may be a PVD chamber in which material can be sputter-deposited onto the substrate 104. Non-limiting examples of materials suitable for sputter deposition include one or more of aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, and tungsten nitride.

[0015] The process chamber 100 includes a substrate support 130, which includes a pedestal 134 for supporting the substrate 104. The pedestal 134 has a substrate support surface 138 that is substantially parallel to the sputtering surface 139 of a target 140 located in the upper section of the process chamber 100. The target 140 may include the material to be sputtered onto the substrate 104 and a backing plate. The substrate support surface 138 of the pedestal 134 is configured to receive and support the substrate 104 during processing. The pedestal 134 may include an electrostatic chuck having electrodes 118 or a heater (such as a resistance heating heater, a heat exchanger, or other suitable heating device). The electrodes 118 may be coupled to an electrode power supply 170b. The electrode power supply 170b may be a DC power supply or an RF power supply. During operation, the substrate 104 is introduced into the unprocessed volume 109 of the process chamber 100 through a slit valve 142 in the side wall 116 of the process chamber 100 and placed on a substrate support 130 in an unprocessed position during loading of the substrate 104. The substrate support 130 can be raised or lowered by a support lift mechanism, and the substrate 104 can be raised or lowered on the substrate support 130 using a lift finger assembly while a robotic arm places the substrate 104 on the substrate support 130. The pedestal 134 can be electrically maintained at a floating potential or grounded during plasma operation.

[0016] The process chamber 100 further includes a process kit 150, which includes various components that can be easily removed from the process chamber 100, for example, to clean sputtering deposits from component surfaces, to replace or repair corroded components, or to modify the process chamber 100 for other processes. The process kit 150 includes a process shield 152. The process shield 152 has a diameter (for example, larger than the sputtering surface 139 and larger than the supporting surface of the substrate support 130) that is sized to surround the sputtering surface 139 of the target 140 and the substrate support 130. The process shield 152 can be made from aluminum, aluminum alloy, titanium, titanium alloy, stainless steel, or ceramic.

[0017] A DC power supply 190 can apply a bias voltage to the target 140 relative to the process shield 152 of the process kit 150, which may be electrically stray during the sputtering and / or cleaning processes. The process kit 150 may include a heater ring 132 coupled to the process shield 152 to heat the process shield 152 to a suitable temperature for performing the sputtering or cleaning process. In some embodiments, the process kit 150 includes an adapter 120 surrounding the process shield 152. In some embodiments, the process shield 152 and the heater ring 132 are coupled so as to clamp between them the adapter 120 or a portion of the side wall 116 (described in further detail below). In some embodiments, the adapter 120 includes a cooling channel 232 located therein. The cooling channel 232 is configured to facilitate the flow of coolant through the cooling channel 232 to cool the adapter. In some embodiments, the adapter is cooled to a temperature of about 20 degrees Celsius to about 50 degrees Celsius.

[0018] In some embodiments, the process shield 152 includes a plurality of grooves (see FIG. 8) for accommodating a spring member 176, such as an RF gasket, disposed between the process shield 152 and the adapter 120. The spring member 176 is configured to electrically couple the process shield 152 and the adapter 120. In some embodiments, the process shield 152 includes a plurality of grooves 602 (see FIGS. 6 and 7) for accommodating a spring member 174, such as an RF gasket, disposed between the process shield 152 and the isolator ring 114. The isolator ring 114 is configured to electrically isolate the target 140 from the process shield 152. The spring member 174 advantageously maintains a uniform gap between the process shield 152 and the target 140.

[0019] In some embodiments, the heater ring 132 includes copper or a copper alloy. The heater 136 can include a heating element, such as a resistive heating element, embedded within or otherwise coupled to the heater ring 132. In some embodiments, an appropriate temperature for performing the cleaning process is from about 250 degrees Celsius to about 350 degrees Celsius. The DC power supply 190 or the second DC power supply 190a can further be used to apply a bias voltage to the heater 136 of the heater ring 132 (e.g., when performing the cleaning process of the process shield 152).

[0020] In some embodiments, the process kit 150 further includes a deposition ring 154 disposed on the pedestal 134 and between the process shield 152 and the substrate support 130. The deposition ring 154 and the process shield 152 cooperate with each other to define a serpentine gas flow path therebetween and reduce the formation of sputter deposits on the outer peripheral wall of the substrate support 130 and the overhang edge 153 of the substrate 104.

[0021] In some embodiments, the process kit 150 includes a reflective liner 148 to protect the inner surface of the process chamber 100 from undesirable sputtering deposits and to reduce heat loss by reflecting heat from the heater ring 132 back to the process shield 152. In some embodiments, the reflective liner 148 is coupled to at least one of the heater ring 132 and the adapter 120. In some embodiments, the reflective liner 148 has an "L" shaped cross-section or a "C" shaped cross-section.

[0022] In some embodiments, the process kit 150 includes a grounding bracket 146 coupled to the substrate support 130. In some embodiments, the grounding bracket is coupled to a grounding loop 156. The grounding loop 156 is configured to contact the bottom surface of the process shield 152 when the substrate support 130 is in the raised position, electrically grounding the process shield 152, and to move away from the process shield 152 when the substrate support 130 is in the lowered position.

[0023] The process chamber 100 is coupled to a gas supply system 160 having a gas source 161 configured to supply a process gas to the processing volume 108. In some embodiments, the process gas from the gas source 161 flows through a conduit 163 to the process kit 150 and then through the process kit 150 to the processing volume 108 (described in more detail below with respect to FIG. 2). In some embodiments, the process kit 150 includes at least one gas supply channel 128. In some embodiments, the at least one gas supply channel 128 includes two gas supply channels that are diametrically opposed to provide a more uniform gas supply. In some embodiments, the at least one gas supply channel 128 extends from the outer surface of the adapter 120 to the inner surface of the adapter 120. In some embodiments, the at least one gas supply channel 128 extends downwardly and radially inwardly from the outer surface of the adapter 120 to the inner surface of the adapter 120. The inventors have discovered that by incorporating the gas supply into the process kit 150, the processing volume 108 receives the process gas, thereby reducing the time required to supply the process gas to the processing volume 108 and advantageously improving throughput. In some embodiments, the process gas from the gas source 161 flows through the sidewall 116 via a conduit 165, then to the non-processing volume 109, and then to the processing volume 108. The conduits 163 and 165 can include a gas flow control valve (not shown), such as a mass flow controller, to pass the process gas at a set flow rate.

[0024] The process gas may include a non-reactive gas such as argon or xenon, which collides forcefully with the target 140 and sputters material from the target 140 onto the substrate 104. The process gas may also include a reactive gas, such as one or more oxygen-containing and nitrogen-containing gases, which can react with the sputtered material to form a layer on the substrate 104. The gas is then energized by the RF power supply 170 to form or create a plasma for sputtering the target 140. For example, the process gas may be ionized by high-energy electrons, and the ionized gas is attracted to the sputtering material biased with a negative voltage. In some embodiments, the reactive gas may react directly with the target 140 to create a compound, which is then sputtered from the target 140. In such embodiments, the target 140 may be energized by both the DC power supply 190 and the RF power supply 170. In some embodiments, the DC power supply 190 may be configured to supply pulsed DC to power the target 140.

[0025] In the cleaning process around the process kit 150, the process gas may include oxygen or other oxygen-containing gases, such as ozone, hydroxides, or peroxides. In some embodiments, the process gas may include chlorine, diatomic chlorine, or chlorine-containing gases. The type of gas used may depend, for example, on the type of target material, the type of chamber (e.g., PVD, CVD, etc.), and the manufacturer's preference.

[0026] In some embodiments, the RF energy supplied by the RF power supply 170 can range in frequency from about 2 MHz to about 60 MHz, or non-limiting frequencies such as 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz may be used. In some embodiments, multiple RF power supplies (i.e., two or more) may be provided to supply RF energy at the above-mentioned frequencies. Additional RF power supplies may further be used to supply bias voltage to the pedestal 134 and / or process shield 152 (for example, when performing a cleaning process in an area around the process kit 150). For example, in some embodiments, an additional RF power supply 170a can be used to supply energy to the electrode 118. The electrode 118 can be used to supply power to the process shield 152 and / or pedestal 134. Furthermore, in some embodiments, the RF power supply 170 can be configured to supply energy to the electrode 118. One or more additional components (e.g., switching circuits) may be provided to switch the electrical path from the cover or ceiling 124 to the electrode 118.

[0027] Spent process gas and by-products are exhausted from the process chamber 100 by an exhaust pump 162. The exhaust pump 162 receives the spent process gas through an exhaust conduit 168 having a throttle valve (not shown) to control the gas pressure in the process chamber 100. The exhaust conduit 168 is connected to the exhaust pump 162, which includes one or more pumps (one is shown).

[0028] In some embodiments, the process chamber 100 may include a magnetic field generator 164 positioned above the target 140 to form a magnetic field around the target 140 to improve sputtering of the target 140. The capacitively generated plasma can be enhanced by the magnetic field generator 164, which may, for example, a permanent magnet or an electromagnet coil, provide a magnetic field within the process chamber 100 having a rotating magnetic field with a rotation axis perpendicular to the plane of the substrate 104. The process chamber 100 may include a magnetic field generator 164 as an addition or alternative, which generates a magnetic field near the target 140 in the process chamber 100 to increase the ion density of the high-density plasma region adjacent to the target 140, thereby improving sputtering of the target material.

[0029] Various components of the process chamber 100 can be controlled by the controller 180. The controller 180 includes program code having an instruction set for manipulating the components to process the substrate 104. For example, the controller 180 may include program code that includes a substrate positioning command set for operating the substrate support 130 and the substrate transfer mechanism, power control for a microwave power supply 181 configured to create plasma in the processing volume section 108 of the process chamber 100 when it is necessary to clean the area around the process kit 150, a gas flow control command set for operating a gas flow control valve to set the flow rate of sputtering gas into the process chamber 100, a gas pressure control command set for operating and maintaining the pressure inside the process chamber 100, temperature control for one or more heating components of the heater 136, a cleaning process command set for the area around the process kit 150, a gas energizer control command set for operating an RF power supply 170 to set the power level that energizes the gas, a temperature control command set for controlling the temperature control system of the substrate support 130 or the heat transfer medium supply section to control the flow rate of heat transfer medium to one or more annular heat transfer channels, and a process monitoring command set for monitoring the process inside the process chamber 100. Various components of the process chamber 100 may be controlled by the controller 180.

[0030] Figure 2 is an isometric section view of a process chamber according to some embodiments of the present disclosure. In some embodiments, the process shield 152 includes a cylindrical body 202. The body includes an upper portion 206 and a lower portion 204. In some embodiments, the process shield 152 includes a plurality of vents 252 to increase the flow conductance by the process shield 152. In some embodiments, the plurality of vents 252 are arranged around the process shield 152. In some embodiments, the plurality of vents 252 are arranged at regular intervals around the process shield 152. In some embodiments, the plurality of vents 252 are arranged in an axisymmetric pattern around the process shield 152 with respect to a central axis extending along the central opening of the process shield 152. In some embodiments, each vent of the plurality of vents 252 is a circular, elliptical, or other shaped opening. The lower portion 204 extends downward and radially inward from the upper portion 206. The surface of the upper portion 206 facing the processing volume is continuous with the surface of the lower portion 204 facing the processing volume. In some embodiments, the outer surface 240 of the lower portion 204 from the bottom of the upper portion 206 to the bottom of the process shield 152 is substantially vertical. In some embodiments, the outer surface 240 is oriented radially outward from the surface of the upper portion 206 facing the processing volume.

[0031] In some embodiments, the upper surface 208 of the lower portion 204 is substantially horizontal. In some embodiments, the upper surface 208 is substantially coplanar with the adjacent portion of the upper surface 212 of the deposit ring 154. In some embodiments, the lower portion 204 includes an inner lip 230 extending radially inward from the body of the lower portion 204. In some embodiments, a first leg 236 extends downward from the innermost portion of the inner lip 230. In some embodiments, the first leg 236 extends to the space between the upper surface 208 and the lower surface of the lower portion 204. The inner surface of the first leg 236 defines the innermost surface of the lower portion 204.

[0032] In some embodiments, the deposition ring 154 includes an inner portion 218 that rests on a pedestal 134. In some embodiments, the upper surface of the inner portion 218 defines the upper surface 212 of the deposition ring 154. In some embodiments, a first leg 222 of the deposition ring 154 extends downward from the inner portion 218. In some embodiments, the deposition ring 154 includes an outer portion 224 that extends radially inward from the first leg 222. In some embodiments, a second leg 226 of the deposition ring 154 extends upward from the outer portion 224. In some embodiments, the first leg 222, the outer portion 224, and the second leg 226 are positioned near the first leg 236 of the process shield 152 to define a meandering gas flow path between them.

[0033] In some embodiments, the upper portion 206 includes an outer lip 214. The outer lip 214 includes a plurality of openings 216 for accommodating fasteners 220 for securing the heater ring 132 to the process shield 152. Figures 6 and 7 are partial top views of the process shield 152 according to some embodiments of the present disclosure. In some embodiments, each of the plurality of openings 216 includes a counterbore 606 for accommodating one of the fasteners 220. In some embodiments, as shown in Figure 6, the counterbore 606 is substantially circular. In some embodiments, each of the plurality of openings 216 includes a counterbore 608 for accommodating one of the fasteners 220. In some embodiments, as shown in Figure 7, the counterbore 608 is substantially elliptical or elongated circular. In some embodiments, the outer lip 214 of the process shield 152 includes a plurality of radial gas distribution channels 604 extending from the plurality of openings 216 to the outer surface 610 of the outer lip 214.

[0034] In some embodiments, the upper surface 612 of the outer lip 214 includes a plurality of grooves 602 for accommodating spring members 174. In some embodiments, the plurality of grooves 602 are arranged at regular intervals around the process shield 152. When the spring members 174 are positioned in the plurality of grooves 602, they extend beyond the upper surface 612 of the outer lip 214 to maintain a desired gap between the process shield 152 and the target 140. In some embodiments, each of the plurality of grooves 602 extends between adjacent openings of a plurality of openings 216. In some embodiments, each of the plurality of grooves 602 extends from the side walls of adjacent counterbores 606, 608.

[0035] Figure 8 is a partial bottom view of a process shield according to several embodiments of the present disclosure. In some embodiments, the lower surface 802 of the outer lip 214 includes a plurality of grooves 804 for housing a spring member 176. In some embodiments, the plurality of grooves 804 are arranged at regular intervals around the process shield 152. In some embodiments, the plurality of grooves 804 on the lower surface 802 of the outer lip 214 extend for a shorter length than the plurality of grooves 602 on the upper surface 612 of the outer lip 214. For example, the spring member 174 may have a length of about 1.5 inches to about 3.5 inches. For example, the spring member 176 may have a length of about 0.5 inches to about 1.5 inches. The plurality of grooves 804 are configured to house the spring member 176 in order to maintain an electrical coupling between the process shield 152 and another chamber component, such as an adapter 120 or a side wall 116.

[0036] Returning to Figure 2, in some embodiments, the insert 238 is positioned in each of the multiple openings 216 between each of the fasteners 220 and the process shield 152 (for example, in counterbore 606 or counterbore 708) to increase the contact area between the process shield and the fasteners 220. The increased contact area advantageously reduces deformation of the process shield 152 and reduces loosening of the fasteners 220. Thus, counterbore 708 can accommodate insert 238 which has a larger contact area with the process shield 152 than counterbore 606. In some embodiments, the insert 238 includes at least one of a conical washer and a flat washer. In some embodiments, the insert 238 is similar in shape to counterbore 708.

[0037] In some embodiments, the outer lip 214 includes a notched lower peripheral edge to accommodate the adapter 120. In some embodiments, the inner lip 246 of the adapter 120 is advantageously clamped between the outer lip 214 and the heater ring 132 via a fastener 220. In some embodiments, the outer lip 214 includes a notched upper peripheral edge to accommodate the isolator ring 114.

[0038] The process kit 150 defines the gas flow path through it. In some embodiments, the gas flow path extends from the region between the adapter 120 and the process shield 152, through a plurality of radial gas distribution channels 604, through a first gap 254 between the isolator ring 114 and the process shield 152, through a second gap 250 between the target 140 and the process shield 152, and into the region within the cylindrical body of the process shield 152. The first gap 254 and the second gap 250 are sized to accommodate the thermal expansion of the process shield 152 without contacting the target 140 or the isolator ring 114 when the process shield 152 is heated.

[0039] Figure 3 is an isometric section view of a process chamber according to some embodiments of the present disclosure. In some embodiments, the inner lip 246 of the adapter 120 includes a plurality of alignment pins 302 for aligning the process shield 152 to the adapter 120. Each of the plurality of alignment pins 302 extends into an alignment slot 304 of the process shield 152 to align the process shield 152 to the adapter 120. In some embodiments, the process shield 152 rests on the shoulders 308 of each of the alignment pins 302. The alignment pins 302 are configured to create a gap between the inner lip 246 of the adapter 120 and the outer lip 214 of the process shield 152 in order to reduce or prevent thermal coupling between the adapter 120 and the process shield 152. The thermal isolation of the adapter 120 and the process shield 152 is advantageous in that it facilitates heating the process shield 152 to a temperature exceeding 250 degrees Celsius while the temperature of the adapter 120 is between approximately 20 degrees Celsius and approximately 50 degrees Celsius. In some embodiments, the alignment pins 302 include three pins spaced about 120 degrees apart from each other. In some embodiments, the alignment pins 302 provide a gap of about 0.005 inches to about 0.02 inches between the upper surface of the inner lip 246 of the adapter 120 and the lower surface of the outer lip 214 of the process shield 152.

[0040] In some embodiments, the heater ring 132 includes a cooling channel 314 for circulating coolant through the heater ring 132 to improve temperature control of the heater ring 132 and the process shield 152. In some embodiments, the upper surface of the side wall 116 includes an O-ring groove 310 for receiving an O-ring 312 to form a vacuum seal between the adapter 120 and the side wall 116. In some embodiments, the adapter 120 includes a notched upper internal edge for accommodating the isolator ring 114. In some embodiments, the surface defined by the notched upper internal edge includes an O-ring groove 316 for receiving an O-ring 320 to form a vacuum seal between the adapter 120 and the isolator ring 114.

[0041] Figure 4 is an isometric section view of a process chamber according to some embodiments of the present disclosure. In some embodiments, a reflective liner 148 is coupled to an adapter 120. In some embodiments, the reflective liner 148 is coupled to the adapter 120 via a plurality of standoffs 402. In some embodiments, the plurality of standoffs 402 extend into a plurality of notches 408 in a heater ring 132. In some embodiments, the plurality of notches 408 extend radially inward from the outer surface of the heater ring 132. In some embodiments, the plurality of standoffs 402 include a central opening 412. A plurality of first fasteners 406 may extend through an opening 420 in the adapter 120 into the central opening 412 at the first end of each of the plurality of standoffs 402 in order to couple the adapter 120 to the plurality of standoffs 402. Multiple second fasteners 404 may extend through the opening 410 of the reflective liner 148 into the central opening 412 at the second end of each of the standoffs 402, in order to connect the reflective liner 148 to the multiple standoffs 402 and, consequently, to the adapter 120.

[0042] Figure 5 is an isometric top view of a heater ring 132 according to some embodiments of the present disclosure. The heater ring 132 includes a plurality of openings 504 corresponding to a plurality of openings 216 of the process shield 152 in order to facilitate coupling the process shield 152 to the heater ring 132. In some embodiments, the heater ring 132 includes a plurality of pin slots 508 corresponding to the locations of alignment pins 302. In some embodiments, the plurality of pin slots 508 include three slots. In some embodiments, the plurality of notches 408 include eight notches.

[0043] In some embodiments, the heater ring 132 includes a plurality of position tabs 506 extending radially outward from the body 510 of the heater ring 132. The plurality of position tabs 506 can rest on chamber components to align the heater ring 132 when the heater ring 132 is placed in the process chamber 100. For example, in some embodiments, the plurality of position tabs 506 rest on the side wall 116.

[0044] Figure 9 is a cross-sectional side view of a process shield according to several embodiments of the present disclosure. In some embodiments, the outer surface 240 of the lower portion 204 includes a first portion 904 extending downward and radially inward from the outer lip 214. In some embodiments, the outer surface 240 includes a second portion 906 extending downward from the first portion 904 to the lower surface 910 of the process shield 152. In some embodiments, the second portion 906 extends substantially vertically downward. In some embodiments, the second portion 906 is located radially inward of the first portion 904.

[0045] While the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure.

Claims

1. A process shield for use in a physical vapor deposition (PVD) process in a process chamber performing sputtering deposition using a target, A cylindrical body comprising an upper portion and a lower portion, wherein the upper portion has an outer lip, the lower portion extends downward and radially inward from the upper portion, the outer lip protrudes from the body in the upper portion of the cylindrical body of the process shield, the outer lip includes a plurality of openings for accommodating fasteners, a plurality of alignment slots extending radially inward from the outer surface of the outer lip, and a notched lower peripheral edge, the lower surface of the outer lip includes a plurality of grooves, Process shields, including

2. The process shield according to claim 1, wherein the outer lip of the process shield includes radial gas distribution channels extending from the plurality of openings of the outer lip to the outer surface of the outer lip.

3. The process shield according to claim 1, wherein the upper surface of the outer lip includes a plurality of grooves for housing a spring member.

4. The process shield according to claim 1, wherein the plurality of openings include counterbores.

5. The process shield according to claim 1, wherein the outer surface of the lower portion includes a portion that extends vertically downward.

6. The process shield according to any one of claims 1 to 5, wherein the outer lip includes a notched upper peripheral edge.

7. The process shield according to any one of claims 1 to 5, wherein the lower portion includes an inner lip extending radially inward and a leg extending vertically downward from the innermost part of the inner lip.

8. A process kit for use in a physical vapor deposition (PVD) process in a process chamber for sputtering deposition using a target, The process shield according to any one of claims 1 to 5, A heater ring coupled to the upper portion of the process shield via a plurality of openings in the outer lip, wherein the heater ring includes a resistive heating element embedded therein, and the heater ring includes a plurality of pin slots corresponding to the locations of the plurality of alignment slots of the process shield. A process kit including the above.

9. The process kit according to claim 8, further comprising a deposition ring disposed between the process shield and the substrate support.

10. The process kit according to claim 8, wherein the heater includes a heating element embedded therein.

11. The process kit according to claim 8, further comprising an adapter surrounding the process shield, the adapter having a cooling channel disposed therein, and the adapter being clamped between the process shield and the heater ring.

12. The process kit according to claim 11, wherein the adapter includes a gas supply channel extending from the outer surface of the adapter to the inner surface of the adapter.

13. The process kit according to claim 11, wherein one or more spring members are disposed between the process shield and the adapter to electrically couple the process shield to the adapter.

14. The process kit according to claim 11, wherein the adapter includes an inner lip, the inner lip includes a plurality of alignment pins for aligning the process shield with the adapter, and the alignment pins are configured to create a gap between the inner lip of the adapter and the outer lip of the process shield.

15. The process kit according to claim 11, further comprising a reflective liner coupled to the adapter via a standoff passing through a notch in the heater ring.

16. A chamber body, which defines an internal volume within it, A target is positioned adjacent to the upper part of the chamber body in the internal volume section, A substrate support positioned in the internal volume facing the target, The process shield according to any one of claims 1 to 5, wherein the process shield extends from the target to the substrate support, and the process shield has an outer lip, An adapter surrounding the process shield, wherein the adapter has a cooling channel disposed therein, A heater ring, wherein the heater ring is coupled to the outer lip of the process shield via a plurality of openings in the outer lip in order to clamp the adapter between the outer lip and the heater ring. A process chamber including a process chamber.

17. The process chamber according to claim 16, wherein the adapter includes an inner lip, the inner lip includes a plurality of alignment pins, and each of the plurality of alignment pins extends into an alignment slot of the process shield to align the process shield with the adapter, while providing a gap between the inner lip of the adapter and the outer lip of the process shield.

18. The process chamber according to claim 16 or 17, further comprising a deposition ring disposed between the process shield and the substrate support, wherein the deposition ring includes an upper surface substantially coplanar with the upper surface of the lower portion of the process shield.

19. The process chamber according to claim 16 or 17, further comprising a grounding bracket coupled to the substrate support, wherein the grounding bracket is electrically coupled to the process shield to ground the process shield when the substrate support is in an elevated position, and is configured to be separated from the process shield when the substrate support is in a lowered position.

20. The process chamber according to claim 16 or 17, further comprising an isolator ring, wherein the gas flow path extends through a first gap between the isolator ring and the process shield, through a second gap between the target and the process shield, and into a region within the cylindrical body of the process shield.

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