Wide-coverage edge ring to enhance shielding of substrate processing systems

Abstract

A wide coverage edge ring configured to be positioned above a lower ring in a substrate processing chamber includes an upper surface, a lower surface step extending downwardly from the lower surface and configured to be received within and interface with a pocket defined at least in part by an upper surface of the lower ring and an inner surface of a chamber liner, an inner diameter, a ledge defined within the inner diameter of the edge ring, and an outer diameter, The outer diameter of the edge ring includes a protrusion extending radially outward from the edge ring and defining an inner step in the outer diameter, the protrusion and the inner step configured to interface with an upper end of the chamber liner, the protrusion configured to extend at least partially above the upper end of the chamber liner.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 285,772, filed on December 3, 2021. The entire disclosure of the above - mentioned application is incorporated herein by reference.

[0002] This disclosure relates to a wide - coverage edge ring design for a substrate processing system.

Background Art

[0003] The description of the background art provided herein is for the purpose of presenting the overall context of the present disclosure. The research of the inventors within the scope described in this background art section, as well as aspects of the description that may not be considered prior art at the time of filing, are not expressly or implicitly admitted as prior art to the present disclosure.

[0004] A substrate processing system performs processing on a substrate such as a semiconductor wafer. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. A process gas mixture may be supplied to a processing chamber to process the substrate. Plasma may be used to ignite the gas and enhance the chemical reaction.

[0005] The substrate is placed on a substrate support during processing. The edge ring has an annular body positioned adjacent to the radial outer edge of the substrate. The edge ring may be used to shape the plasma or to concentrate it onto the substrate. The edge ring is sometimes referred to as an upper edge ring. Some existing mechanically replaceable upper edge rings are not designed for wide coverage areas because their outer diameter needs to be small enough to pass through multiple transport ports in the substrate processing system. Examples of such edge rings can be found in U.S. Patent No. 10,658,222 issued on 19 May 2020 and U.S. Patent Application Publication No. 2020 / 0020565 published on 16 January 2020. These examples and other existing mechanically replaceable upper edge rings, when installed, cover an area directly adjacent to the substrate. In some cases, the edge ring may partially cover the lower ring. However, these rings are not designed to adequately protect the underlying components (e.g., the lower edge ring or other support or operating structures) from ion bombardment during the etching process. If energized plasma ions are not shielded by the upper edge ring, they can rapidly corrode the outer edges of the underlying components. This often leads to the need for more frequent replacement of the underlying components. [Overview of the project]

[0006] A wide-coverage edge ring, configured to be positioned above the lower ring in the substrate processing chamber, includes an upper surface, a lower surface configured to be received and connected to a pocket defined at least partially by the upper surface of the lower ring and the inner surface of the chamber liner, an inner diameter, a ledge defined within the inner diameter of the edge ring, and an outer diameter. The outer diameter of the edge ring includes a projection extending radially outward from the edge ring and defining an inner step in the outer diameter, the projection and the inner step configured to connect with the upper end of the chamber liner, and the projection configured to extend at least partially above the upper end of the chamber liner.

[0007] Other features include the fact that the edge ring is a replaceable edge ring configured to be transported in and out of the substrate processing chamber through the same opening as the substrate. The edge ring is made of quartz. The upper surface of the edge ring is nearly flat. The upper surface of the edge ring includes an angled upper step. The lower inner angle of the edge ring has a first radius, and the lower outer angle of the edge ring has a second radius. The second radius is greater than the first radius. The thickness of the projection is greater than or equal to the thickness of the ledge.

[0008] Other features include the edge ring system, which includes an edge ring and further includes a lower ring. The lower ring is made of ceramic. The lower ring includes multiple guide channels. The inner diameter of the lower ring includes a rim that extends upward toward the edge ring, and a pocket is defined between the rim and the chamber liner. The edge ring system further includes a chamber liner, the upper end of which includes an outer step, and a pocket is defined between the rim and the outer step. The radius of the lower outer angle of the edge ring is configured to connect with the radius defined by the outer step of the chamber liner. A meandering path is defined between the edge ring and the chamber liner.

[0009] The edge ring system includes a lower ring having a rim projecting upward from the inner diameter of the lower ring, and a wide-coverage edge ring positioned above the lower ring. The edge ring includes an upper surface, a lower surface configured to be received and connected to a pocket defined at least partially by the upper surface of the lower ring and the inner surface of the chamber liner, an inner diameter, a ledge defined within the inner diameter of the edge ring, and an outer diameter. The outer diameter of the edge ring includes a projection extending radially outward from the edge ring and defining an inner step in the outer diameter, the projection and the inner step configured to connect with the upper end of the chamber liner, and the projection configured to extend at least partially above the upper end of the chamber liner.

[0010] Other features include the edge ring being made of quartz and the lower ring being made of ceramic. The lower inner angle of the edge ring has a first radius, and the lower outer angle of the edge ring has a second radius, the second radius being greater than the first radius. The edge ring system further includes a chamber liner. The upper end of the chamber liner includes an outer step, a pocket is defined between the rim and the outer step, and the second radius of the lower outer angle of the edge ring is configured to connect with a third radius defined by the outer step of the chamber liner. A meandering path is defined between the edge ring and the chamber liner.

[0011] The edge ring system includes a lower ring and a wide-coverage edge ring positioned above the lower ring. The edge ring includes an upper surface, a lower surface configured to be supported within and connect to a pocket defined at least partially by the upper surface of the lower ring and the inner surface of the chamber liner, an inner diameter, a ledge defined within the inner diameter of the edge ring, and an outer diameter. The outer diameter of the edge ring includes a projection extending radially outward from the edge ring and defining an inner step in the outer diameter, the projection and the inner step configured to connect to the upper end of the chamber liner, and the projection configured to extend at least partially above the upper end of the chamber liner.

[0012] Further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. [Brief explanation of the drawing]

[0013] This disclosure will be better understood from the detailed description and accompanying drawings.

[0014] [Figure 1] This is a functional block diagram illustrating an example of a substrate processing system according to this disclosure.

[0015] [Figure 2A]A diagram showing an edge ring example according to the present disclosure.

[0016] [Figure 2B] A diagram showing another edge ring example according to the present disclosure.

[0017] [Figure 2C] A diagram showing another edge ring example according to the present disclosure.

[0018] [Figure 2D] A diagram showing another edge ring example according to the present disclosure.

[0019] [Figure 2E] A diagram showing another edge ring example according to the present disclosure.

[0020] [Figure 2F] A diagram showing another edge ring example according to the present disclosure.

[0021] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

Embodiments for Carrying Out the Invention

[0022] During substrate processing, the substrate is placed on a pedestal such as an electrostatic chuck (ESC), process gas is supplied, and plasma is collided within the processing chamber. The exposed surfaces of the components within the processing chamber are worn by exposure to the plasma.

[0023] For example, an edge ring is arranged around the radial outer edge of a substrate to shape the plasma. During operation, the exposed surfaces of the substrate and the edge ring are etched by the plasma. As a result, the edge ring wears out, the influence of the edge ring on the plasma changes, which may thereby have an adverse effect on uniformity. For example, due to wear, the exposed surface of the edge ring may have different heights relative to the substrate. Therefore, in some substrate processing systems, it is necessary to periodically open the processing chamber to replace the worn edge ring.

[0024] In some examples, the edge ring may be supported on a lower ring (e.g., a ceramic lower ring). In some embodiments, the edge ring is configured to be transported into and out of the processing chamber through the same openings (e.g., slot valves) as the substrate. This approach reduces the chamber downtime by eliminating vacuum breaks and potential sources of contamination. In some examples, since the edge ring needs to be adapted through multiple transport openings, the outer diameter of the edge ring is limited by the size of the smallest opening. Therefore, the edge ring may not completely cover the upper surface of the lower ring when installed in the processing chamber. Accordingly, the portion of the lower ring not covered by the edge ring or the chamber liner is exposed to plasma and wear, ion bombardment, by-product deposition, corrosion, etc. As a result, the exposure of the lower ring reduces the mean time between cleanings (MTBC) and increases the frequency of chamber stop / standby events.

[0025] The edge ring design according to this disclosure is configured to cover and protect components located below, such as the lower ring and / or other support / actuating systems. For example, the edge ring (e.g., a replaceable quartz edge ring) extends from the inner diameter of the lower ring beyond the outer diameter of the lower ring. In one embodiment, the outer diameter of the edge ring extends to the chamber liner and connects with the chamber liner. As a result, the upper surface of the lower ring, including its radially outermost edge, is not exposed to corrosion, particles, and / or other contaminants in the plasma volume of the processing chamber. Furthermore, the gap between the edge ring and the chamber liner is minimized to prevent plasma ignition and byproduct formation on the lower ring (e.g., aluminum fluoride formation).

[0026] In one embodiment, the surface profile of the edge ring is configured to connect or complement (e.g., complement) the surface of the chamber liner and / or the lower ring. In this way, a direct line of sight from the plasma volume to the edge seals of the lower ring and ESC is eliminated.

[0027] Referring next to Figure 1, an example of a substrate processing system 100 is shown, which performs plasma processing and includes a replaceable edge ring system according to a particular embodiment of the present disclosure. The substrate processing system 100 includes a coil drive circuit 104. In some examples, the coil drive circuit 104 includes an RF source 108, a pulsating circuit 112, and a tuning circuit 114. The pulsating circuit 112 controls the TCP envelope of the RF signal and varies the duty cycle of the TCP envelope in operation (e.g., between 1% and 99%). As can be seen, the pulsating circuit 112 and the RF source 108 may be combined or separate.

[0028] The tuning circuit 114 may be directly connected to one or more inductive coils 116. The tuning circuit 114 tunes the output of the RF source 108 to a desired frequency and / or phase, matches the impedance of the coils 116, and / or divides the output between the coils 116. Although examples with multiple coils are shown, a single conductor or a single coil containing multiple conductors can be used.

[0029] The dielectric window 120 is positioned along one side of the processing chamber 122. The processing chamber 122 further comprises a substrate support (or base) 124 that supports the substrate 128. The substrate support 124 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. A process gas is supplied to the processing chamber 122, and plasma 132 is generated inside the processing chamber 122. An RF bias drive circuit 136 may be used to supply an RF bias to the substrate support 124 during operations that control the ion energy. The RF bias drive circuit 136 may include an RF source and an impedance matching circuit (not shown).

[0030] In some embodiments, a plenum 140 is positioned adjacent to the dielectric window 120 (for example, above it as shown). A gas delivery system 144 may be used to deliver gas from a gas source 146 to the plenum 140 via a valve 148. The gas may include a cooling gas (air) used to cool the coil 116 and the dielectric window 120.

[0031] A gas delivery system 156 may be used to supply a process gas mixture to a processing chamber 122. The gas delivery system 156 may include a gas source 158 (e.g., a precursor, vapor, one or more other gases, an inert gas), a gas metering system 160 such as a valve and a mass flow controller, and a manifold 162. A gas injector (not shown) may be located in the center (or elsewhere) of the dielectric window 120 and is used to inject the gas mixture from the gas delivery system 156 into the processing chamber 122.

[0032] A heater / cooler 164 may be used to heat / cool the substrate support 124 to a predetermined temperature. The exhaust system 166 includes a valve 168 and a pump 170 for controlling the pressure in the processing chamber 122 and / or removing the reactants from the processing chamber 122 by purging or vacuum evacuation.

[0033] The system controller 172 may be used to control the process. The system controller 172 monitors system parameters and controls the delivery of the gas mixture, plasma collision, maintenance, and extinction, removal of reactants, supply of cooling gas, etc.

[0034] The substrate support 124 may include an edge ring system including an edge ring 174. As shown in the figure, the edge ring 174 is positioned above the lower ring 176. The edge ring 174 according to this disclosure is configured to protect the lower ring 176 from exposure to the plasma processing environment, as will be described in more detail later. For example, the edge ring 174 extends from the inner diameter of the lower ring 176 beyond the outer diameter of the lower ring 176. In one embodiment, the outer diameter of the edge ring 174 extends to and connects with the chamber liner (not shown in Figure 1).

[0035] In certain embodiments, the system controller 172 controls the robot 180 to deliver the substrate and / or edge ring to the processing chamber. The system controller 172 also controls one or more actuators 182 that move lift pins (not shown in Figure 1) to selectively raise and lower the edge ring 174, facilitating the transport of the edge ring 174 to and from the substrate support 124. The system controller 172 may also receive outputs from one or more sensors 184 used to sense the height of the edge ring. Non-limiting examples of sensors include optical sensors, physical sensors, piezoelectric sensors, ultrasonic sensors, and the like.

[0036] Referring next to Figures 2A to 2F, one embodiment of the edge ring system 200 for a substrate support 204 according to the present disclosure is shown. For example, the edge ring system 200 is configured to operate within a substrate processing system 100 and processing chamber 122, as described above in Figure 1. The edge ring system 200 includes a wide-coverage edge ring 208 (e.g., upper edge ring) positioned to surround the upper portion of the substrate support 204. A lower ring 212 surrounds the base plate 216 of the substrate support 204 (e.g., a conductive base plate made of aluminum), and the wide-coverage edge ring 208 is positioned above the lower ring 212. In some embodiments, the wide-coverage edge ring 208 is made of quartz and the lower ring 212 is made of ceramic. In some embodiments, the lower ring 212 is made of at least partially ceramic to minimize corrosion due to exposure to radicals and to extend the MTBC.

[0037] The ceramic layer 220 is placed on the base plate 216. The ceramic layer 220 is configured to support the substrate 224 during processing. In some embodiments (as illustrated), a wide-coverage edge ring 208 is supported on the ceramic layer 220 and does not contact the lower ring 212. For example, 10-40% of the lower or bottom surface of the lower ring is in direct contact with and supported on the ceramic layer 220. In some embodiments, an adhesive layer 228 is placed between the base plate 216 and the ceramic layer 220. To protect the adhesive layer 228, an edge seal 232 (e.g., an O-ring) is provided.

[0038] In some embodiments, the chamber liner 236 is positioned in the lower portion of the processing chamber 122. In some embodiments, the chamber liner 236 is positioned between the outer wall of the processing chamber 122 and the lower ring 212. As shown in Figure 2B, the chamber liner 236 surrounds the outer circumference of the lower ring 212 and at least a portion of the wide-coverage edge ring 208. In some embodiments, the chamber liner 236 is provided to minimize the accumulation of by-products on the walls of the processing chamber 122. In some embodiments, the chamber liner 236 is provided to protect the lower ring 212 from abrasion, by-product accumulation, etc.

[0039] As shown in Figure 2A, the wide-coverage edge ring 208 includes a lip or projection 240 that extends radially outward from the outer diameter of the wide-coverage edge ring 208 and overhangs / extends above the chamber liner 236. In one embodiment shown in Figure 2A, the upper end of the chamber liner 236 includes an outer step 244 (i.e., a radially outward and upward step relative to the substrate support 204). Conversely, the outer diameter of the wide-coverage edge ring 208 has an inner step 248 (i.e., a radially inward and downward step relative to the substrate support 204). As a result, the outer diameter profile of the wide-coverage edge ring 208 is complementary to and configured to connect with the upper end of the chamber liner 236. As shown, the wide-coverage edge ring 208 does not contact the chamber liner 236.

[0040] The chamber liner 236 in Figures 2C and 2D does not include an outer step 244, but the wide-coverage edge ring 208 in Figures 2C and 2D includes an inner step 248 and is configured to connect with the upper end of the chamber liner 236. For example, the projection 240 extends upward and covers at least 20% of the upper end of the chamber liner 236. In some embodiments (as illustrated), the projection covers at least 50% (e.g., 50% to 100%) of the upper end of the chamber liner 236.

[0041] In Figures 2A, 2B, 2C, and 2D, the inner diameter of the wide-coverage edge ring 208 includes a ledge or step 250. For example, the step 250 extends radially inward and downward from the inner diameter of the wide-coverage edge ring 208. The step 250 is configured to extend below the outer edge of the substrate 224. For example, the substrate 224 extends over the step 250 and protrudes from there.

[0042] As shown in Figures 2A and 2B, the lower ring 212 and the chamber liner 236 define a pocket 252. For example, the inner diameter of the lower ring 212 has an upwardly projecting rim 256, and the pocket 252 is defined between the rim 256 and the chamber liner 236. The bottom surface of the wide-coverage edge ring 208 includes a bottom step 260 that extends downward (i.e., radially outward from the rim 256) into the pocket 252. Conversely, in the embodiments shown in Figures 2C and 2D, the bottom surface of the wide-coverage edge ring 208 is substantially flat (i.e., does not include a bottom step). In this way, the interface 262 between the wide-coverage edge ring 208, the lower ring 212, and the chamber liner 236 defines a meandering or winding path between the processing chamber volume 264 and the lower ring 212, edge seal 232, etc. In other words, the interface 262 is configured to eliminate the direct line of sight from the processing chamber volume 264 to the surface of the lower ring 212. As a result, the arrangement of the wide-coverage edge ring 208 and chamber liner 236 is configured to protect the lower ring 212 from direct line of sight exposure to plasma and ion bombardments.

[0043] The radial distance between the inner diameter of the wide-coverage edge ring 208 and the bottom step 260 may be selected according to a desired minimum surface area on the bottom surface of the bottom step 260. For example, the bottom surface of the bottom step 260 may be configured to be supported on the end effector of a transport robot, such as a transport robot of a vacuum transport module. As a result, the width of the bottom step 260 is selected to maximize contact between the bottom surface of the bottom step 260 and the end effector. In some examples, the maximum radial distance between the inner diameter of the wide-coverage edge ring 208 and the bottom step 260 is about 30 to 50 mm. In some embodiments, the maximum radial distance between the inner diameter of the wide-coverage edge ring 208 and the bottom step 260 is about 40 mm. In one embodiment, the inner edge of the bottom step 260 is located at a radial distance of 330 mm or less of the wide-coverage edge ring 208. As used herein, the term “about” may mean “within 5% of”.

[0044] The interface 262 includes the bottom surface of the wide-coverage edge ring 208 and the gap between the surface of the lower ring 212 and the chamber liner 236. As described above, the edge ring system 200 is configured such that the wide-coverage edge ring 208 is supported on the ceramic layer 220. As a result, the bottom surface of the wide-coverage edge ring 208 is above the surface of the lower ring 212 and the chamber liner 236, and slightly separated from them. In this way, manufacturing variations (e.g., variations in the thickness / height of the wide-coverage edge ring 208, the lower ring 212, the ceramic layer 220, etc.) do not result in contact between the wide-coverage edge ring 208 and either the lower ring 212 or the chamber liner 236. Instead, the manufacturing tolerances of the various components of the edge ring system 200 are selected to ensure that the interface 262 includes at least a minimum gap (e.g., a gap of at least 0.03 mm and no more than 1.20 mm). The gap width may be uniform or different (for example, the gap width between the wide-coverage edge ring 208 and the lower ring, and the gap width between the wide-coverage edge ring 208 and the chamber liner 236 may be the same or different as shown).

[0045] The gap prevents direct contact between the wide-coverage edge ring 208 and the chamber liner 236. In some embodiments, there is no contact between the wide-coverage edge ring 208 and the chamber liner 236. Contact with the chamber liner 236 may change the impedance of the wide-coverage edge ring 208 and alter the plasma sheath above the wide-coverage edge ring 208, etc. Contact with the chamber liner 236 may also cause unintended movement of the wide-coverage edge ring 208 during operation (for example, due to different temperatures, different thermal expansion coefficients, etc., of the chamber liner 236 and the wide-coverage edge ring 208).

[0046] In this way, the exposure of the lower ring 212 to plasma, ions, radicals, etc., is significantly reduced, thereby reducing particle generation, minimizing corrosion and wear of the lower ring 212, and increasing MTBC. Furthermore, the wide-coverage edge ring 208 may be a consumable and replaceable part. In other words, as the wide-coverage edge ring 208 wears out during use (for example, according to a predetermined schedule, in response to the measured or sensed dimensions of the wide-coverage edge ring 208 reaching a threshold), the wide-coverage edge ring 208 can be replaced. As a result, since the wide-coverage edge ring 208 is replaceable, it can be configured to protect the lower ring 212 without affecting (i.e., reducing) MTBC.

[0047] In some embodiments, the height or thickness of the projection 240 is greater than or equal to the height or thickness of the radially inward-extending ledge 268. Generally, since the ledge 268 is exposed to plasma and associated wear, the lifespan of the wide-coverage edge ring 208 (i.e., the time between replacements) depends on the thickness of the ledge 268. As a result, in some embodiments, the projection 240 is at least the same thickness as the ledge 268 so that the projection 240 does not further limit the lifespan of the wide-coverage edge ring 208. In some embodiments, the projection 240 is at least 1% to 20% thicker than the ledge 268.

[0048] As shown in Figures 2A-2D and 2F, the upper surface of the wide-coverage edge ring 208 is substantially flat. In other embodiments, the upper surface of the wide-coverage edge ring 208 may include an upper step (e.g., an angled or inclined upper step 270, as shown in Figure 2E) or an upper inclination (towards the outer diameter). In this way, the thickness of the projection 240 can be increased without increasing the height or thickness of the inner diameter of the wide-coverage edge ring 208. In some embodiments, the wide-coverage edge ring 208 in Figure 2E does not have a lower step 260, so the bottom surface is substantially flat, as is the bottom surface of the wide-coverage edge ring 208 shown in Figures 2C and 2D. In some embodiments, the bottom surface of the wide-coverage edge ring 208 in Figure 2E is modified to allow for proper connection with a lower component that does not form a pocket 252, as shown in Figure 2A. In other words, in some embodiments, the bottom surface is configured to connect to a lower ring without a rim 256 and a chamber liner 236 without an outer step 244.

[0049] As shown in Figures 2A and 2B, the lower ring 212 includes a plurality of guide channels 274. The guide channels 274 are aligned with the pocket 252 and the bottom step 260. Lift pins 276 pass through each of the guide channels 274 and connect (i.e., contact) with the bottom surface of the wide-coverage edge ring 208. As a result, the lift pins 276 can be moved up and down to raise and lower the wide-coverage edge ring 208. For example, the lift pins 276 may be used to raise the wide-coverage edge ring 208 to facilitate removal and replacement of the edge ring (e.g., using a robot's end effector), or to lower the wide-coverage edge ring 208 to lower it onto the substrate support 204.

[0050] Although shown as substantially flat, the bottom surface area of ​​the wide-coverage edge ring 208 may be configured to facilitate contact with the lift pins 276. For example, the bottom surface of the wide-coverage edge ring 208 may include a centering or retention mechanism (e.g., a recess or depression) configured to align with the pins 276, the roughened surface area, etc. In other embodiments (e.g., as shown in Figure 2C), the lower ring 212 may not include the guide channel 274. In yet another embodiment, the lower ring 212 shown in Figure 2C may include a guide channel 274 to receive the lift pins 276 (e.g., as shown in Figure 2D).

[0051] One or more corners of the wide-coverage edge ring 208 may be curved or rounded to facilitate manufacturing and engagement and / or alignment with the lower ring 212, ceramic layer 220, chamber liner 236, etc. The corners may have the same or different radii (i.e., radii of curvature). In the embodiments shown in Figures 2A and 2B, the first radius of the first lower interior angle 280-1 of the wide-coverage edge ring 208 may be different from the radius of the second lower interior angle 280-2. For example, the radius of the second lower interior angle 280-2 may be at least twice the first radius of the first lower interior angle 280-1. In other examples, the first lower interior angle 280-1 and the second lower interior angle 280-2 have the same radius.

[0052] The lower outer angle 280-3 has a second radius that is larger than the first radius. For example, the second radius is configured to be complementary to the inner surface of the chamber liner 236. In other words, the second radius of the lower outer angle 280-3 is selected according to a third radius defined by the outer step 244 of the chamber liner 236. In some embodiments, the second radius (i.e., radius of curvature) is at least twice the first radius. In some embodiments, a smaller first radius and a larger second radius facilitate alignment with surrounding components at each position. The radius of the corner 280-4 between the first lower inner angle 280-1 and the second lower inner angle 280-2 may be the same as the first radius of the first lower inner angle 280-1.

[0053] In some embodiments, one or more surfaces of the wide-coverage edge ring 208 may be polished. For example, the upper surface of the wide-coverage edge ring 208 may be polished to increase light transmittance. Conversely, other surfaces of the wide-coverage edge ring 208 may be left unpolished or intentionally roughened to reduce light transmittance. For example, the bottom surface of the wide-coverage edge ring 208 may be left unpolished or roughened to facilitate detection during alignment in embodiments where a ray is used to determine the position of the wide-coverage edge ring 208.

[0054] In some embodiments, the inner diameter of the wide-coverage edge ring 208 includes an inclined surface 284, as shown in Figure 2F. For example, the inclined surface 284 has an angle of 5 to 45 degrees with respect to the upper surface of the step 250. In other examples, the angle may be less than 5 degrees or greater than 45 degrees. As shown, the wide-coverage edge ring 208 of Figure 2F is similar to the embodiment of the wide-coverage edge ring 208 shown in Figure 2C, but the inner diameter includes an inclined surface 284 instead of a substantially vertical surface. In other embodiments, any of the examples of the wide-coverage edge ring 208 of Figures 2A to 2E may also include an inclined surface 284.

[0055] The foregoing descriptions are essentially illustrative and do not intend to limit in any way the Disclosure, its application, or its use. The broad teachings of the Disclosure can be realized in various forms. Therefore, although the Disclosure includes certain examples, the true scope of the Disclosure should not be limited to certain examples, as other modifications become apparent by examining the drawings, specification, and appended claims. It should be understood that one or more steps of the Method may be performed in different orders (or simultaneously) without altering the principles of the Disclosure. Furthermore, although each embodiment is described above as having specific features, one or more of those features described in relation to any embodiment of the Disclosure may be realized in any of the other embodiments, and / or combined with those features, even if such combinations are not explicitly described. In other words, the embodiments described are not mutually exclusive, and one or more embodiments may be substituted for one another while still remaining within the scope of the Disclosure.

[0056] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “below,” and “displaced.” When a relationship between a first and a second element is described in the above disclosure, unless it is explicitly stated as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. When used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the logic (A OR B OR C) using a non-exclusive logic OR, and not as “at least one of A, at least one of B, and at least one of C.”

[0057] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronic components that control the operation of the system before, during, and after processing of semiconductor wafers or substrates. The electronic components may control various components or subparts of one or more systems and may be referred to as “controllers.” Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, output settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transport in and out of tools and other transport tools, and / or load locks connected to or linked to specific systems.

[0058] Generally, a controller may be defined as an electronic component having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers (e.g., software) that execute program instructions. Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or against a semiconductor wafer, or against a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to perform one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0059] In some embodiments, the controller may be part of or coupled to a computer, integrated with the system, coupled to the system, networked to the system in other ways, or a combination thereof. For example, the controller may be all or part of a “cloud” or fab-host computer system, thereby enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, investigate the history of past fabrication operations, investigate trends or performance metrics from multiple fabrication operations, modify parameters of the current operation, set processing steps following the current operation, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network which may include a local network or the internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool to which the controller is connected or configured to control. Therefore, as described above, the controllers may be distributed by comprising one or more discrete controllers that are networked together and work toward a common purpose, such as the processes and control described herein. An example of a distributed controller for such purposes would be one or more integrated circuits in a chamber that communicate with one or more remotely located integrated circuits (such as those at the platform level or as part of a remote computer) that together control the processes in the chamber.

[0060] Examples of systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion embedding chambers or modules, track chambers or modules, and any other semiconductor processing systems associated with or used in the fabrication and / or manufacture of semiconductor wafers.

[0061] As described above, depending on one or more process steps performed by the tool, the controller may communicate with other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a main computer, another controller, or one or more tools used for material transport to move wafer containers between tool locations and / or load ports in the semiconductor manufacturing plant.

Claims

1. A wide-coverage edge ring configured to be positioned above the lower ring in the substrate processing chamber, Top surface and, The lower surface, wherein the lower surface of the edge ring includes a lower step extending downward from the lower surface, and the lower step is configured to be received in and connected to a pocket at least partially defined by the upper surface of the lower ring and the inner surface of the chamber liner, An inner diameter, wherein the ledge is defined within the inner diameter of the edge ring, The outer diameter is such that the outer diameter of the edge ring extends radially outward from the edge ring and includes a projection that defines an inner step in the outer diameter, the projection and the inner step are configured to connect with the upper end of the chamber liner, and the projection is configured to extend at least partially above the upper end of the chamber liner, and An edge ring with a wide coverage area.

2. An edge ring according to claim 1, wherein the edge ring is a replaceable edge ring configured to be transported to and from the inside and outside of the substrate processing chamber through the same opening as the substrate.

3. An edge ring according to claim 1, wherein the edge ring is made of quartz.

4. An edge ring according to claim 1, wherein the upper surface of the edge ring is substantially flat.

5. An edge ring according to claim 1, wherein the upper surface of the edge ring includes an angled upper step.

6. An edge ring according to claim 1, wherein the lower inner angle of the edge ring has a first radius and the lower outer angle of the edge ring has a second radius.

7. An edge ring according to claim 6, wherein the second radius is larger than the first radius.

8. An edge ring according to claim 1, wherein the thickness of the protruding portion is equal to or greater than the thickness of the ledge.

9. An edge ring system comprising the edge ring described in claim 1, and further comprising the lower ring.

10. An edge ring system according to claim 9, wherein the lower ring is made of ceramic.

11. An edge ring system according to claim 10, wherein the lower ring includes a plurality of guide channels.

12. An edge ring system according to claim 10, wherein the inner diameter of the lower ring includes a rim extending upward toward the edge ring, and the pocket is defined between the rim and the chamber liner.

13. An edge ring system according to claim 12, further comprising the chamber liner, wherein the upper end of the chamber liner includes an outer step, and the pocket is defined between the rim and the outer step.

14. An edge ring system according to claim 13, wherein the radius of the lower outer angle of the edge ring is configured to connect with the radius defined by the outer step of the chamber liner.

15. An edge ring system according to claim 13, wherein a meandering path is defined between the edge ring and the chamber liner.

16. It is an edge ring system, A lower ring, wherein the rim protrudes upward from the inner diameter of the lower ring, The system comprises a wide-coverage edge ring positioned on the lower ring, wherein the edge ring is Top surface and, The lower surface includes a lower step that extends downward from the radially outer lower surface of the rim, wherein the lower surface of the edge ring includes a lower step that is received within a pocket defined at least partially by the upper surface of the lower ring and the inner surface of the chamber liner, and is configured to connect with the pocket. An inner diameter, wherein the ledge is defined within the inner diameter of the edge ring, The outer diameter is such that the outer diameter of the edge ring extends radially outward from the edge ring and includes a projection that defines an inner step in the outer diameter, the projection and the inner step are configured to connect with the upper end of the chamber liner, and the projection is configured to extend at least partially above the upper end of the chamber liner, and An edge ring system equipped with this feature.

17. An edge ring system according to claim 16, wherein the edge ring is made of quartz and the lower ring is made of ceramic.

18. An edge ring system according to claim 16, wherein the lower inner angle of the edge ring has a first radius, and the lower outer angle of the edge ring has a second radius, the second radius being greater than the first radius.

19. An edge ring system according to claim 18, further comprising the chamber liner, wherein the upper end of the chamber liner includes an outer step, the pocket is defined between the rim and the outer step, and the second radius of the lower outer angle of the edge ring is configured to connect with a third radius defined by the outer step of the chamber liner.

20. An edge ring system according to claim 19, wherein a meandering path is defined between the edge ring and the chamber liner.

21. It is an edge ring system, The lower ring and The system comprises a wide-coverage edge ring positioned on the lower ring, wherein the edge ring is Top surface and, A lower surface and a lower surface configured to be supported and connected to a pocket defined at least partially by the upper surface of the lower ring and the inner surface of the chamber liner, An inner diameter, wherein the ledge is defined within the inner diameter of the edge ring, The outer diameter is such that the outer diameter of the edge ring extends radially outward from the edge ring and includes a projection that defines an inner step in the outer diameter, the projection and the inner step are configured to connect with the upper end of the chamber liner, and the projection is configured to extend at least partially above the upper end of the chamber liner, and An edge ring system equipped with this feature.

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