Rutile-type germanium dioxide self-supporting substrate and method for manufacturing the same, rutile-type germanium dioxide template and method for manufacturing the same, rutile-type germanium dioxide-based device wafer and method for manufacturing the same, method for manufacturing germanium tetrachloride gas, method for manufacturing rutile-type germanium dioxide single crystals, and apparatus for manufacturing rutile-type germanium dioxide single crystals
The halide vapor phase growth method addresses the limitations of existing r-GeO2 crystal production by converting germanium chloride intermediates into germanium tetrachloride, achieving large, defect-free crystals suitable for UV and power devices with enhanced growth rates.
Patent Information
- Application Number
- JP2022112283
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-04-19
- Filing Date
- 2022-07-13
- Publication Date
- 2026-05-25
- Estimated Expiration
- 2042-07-13
AI Technical Summary
Existing methods for growing rutile-type germanium dioxide (r-GeO2) crystals are limited to small sizes and suffer from slow growth rates and macrodefects, hindering the production of high-quality self-supporting substrates necessary for UV light-emitting devices and power devices.
A method involving halide vapor phase growth, including two-stage reactions to convert germanium chloride intermediates into germanium tetrachloride, which is then used to epitaxially grow rutile-type germanium dioxide single crystals on a support substrate, controlling the partial pressures of gases to minimize macrodefects and enhance growth rate.
The method enables the production of large-diameter, high-quality rutile-type germanium dioxide crystals with reduced macrodefects, suitable for use in UV light-emitting devices and power devices, with growth rates exceeding 100 μm/hour.