Photoelectronic structure, photoelectronic arrangement structure, and method

Abstract

To provide a technique that relates to various aspects relating to an optoelectronic structure element or an arrangement structure comprising such a structure element for various applications, in particular in the automotive industry and for visual display devices, that can be easily produced and allow faster switching times.SOLUTION: There is provided an optoelectronic arrangement structure comprising: a substrate; and at least one optoelectronic structure element fixed to one side of the substrate. Therein: a side facing the substrate includes a first electrical contact; a side not facing the substrate includes a second electrical contact electrically connected to an electrical control contact on a surface of the substrate via a mirror coating; and the mirror coating at least partially covers the surface of the substrate facing the at least one structure element.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This patent application claims priority from the following German applications: German Patent Application Publication No. 102019103365.9 of February 11, 2019, German Patent Application Publication No. 102019110499.8 of April 23, 2019, and German Patent Application Publication No. 102019111767.4 of May 7, 2019, as well as the priority of International Application PCT / EP2020 / 052191 of January 29, 2020, the disclosures of which are incorporated herein by reference.

[0002] Background Art Today, light-emitting diodes or common optoelectronic structural elements have become indispensable in a very wide variety of applications. They are used not only in displays and common video display devices, but also for large-area displays, advertising spaces or video walls. However, systems using such structural elements are increasingly being used in lighting areas of office areas or private spaces as well. This is because various creative lighting concepts can be realized by individually driving and controlling them.

[0003] Furthermore, there are typical lighting applications such as in the automotive field, for example. In addition to display devices, lighting fixtures such as headlights that can be realized by, for example, a pixelated array can also be mentioned. These lighting fixtures need to be designed to be able to guide light by adding an optical system and, if necessary, not to dazzle the eyes of other road users. Many of these applications are common in that a large number of optoelectronic structural elements are arranged in rows and columns on a substrate or backplane, and in this case, further means may be applied for guiding and extracting light.

[0004] Furthermore, there is a requirement to achieve the best possible light extraction while simultaneously maintaining low power consumption. Therefore, the light generated by the photoelectron component needs to be extracted and emitted as efficiently as possible. The following application addresses this subject matter, taking the above-mentioned uses into consideration.

[0005] overview Various designs based on vertical or horizontal LED structures are suitable for the manufacture of displays, display devices, and even lighting fixtures. In this case, it is particularly important that the switching time is short and that the current carrying capacity is sufficient. At the same time, the emitted light should be collimated as much as possible before being emitted.

[0006] When horizontal optoelectronic structures are used, the anode and cathode contacts are typically realized using separate metal lead frames (Zuleitungsbahnen), and both contacts are located on the underside of the chip. Both the cathode and anode have metal lead frames wired to each pixel. When vertical optoelectronic structure chips are used, the anode contacts located on the underside of the chip are realized using separate metal lead frames, while the cathode contacts located on the upper side of each chip are realized by a common cathode. In either case, the lead wires must be as short as possible to minimize parasitic capacitance.

[0007] As explained earlier, optoelectronic structures are manufactured monolithically or individually and then post-processed on a substrate. The backplane (in the case of a backplane assembly; in monolithic structures, this may also serve as the substrate, or the growth substrate may replace the backplane) contains the electronic circuitry for drive control. Regarding drive control, a distinction is made between passive matrix backplanes with integrated IC circuits and active matrix backplanes with integrated TFT circuits. In passive matrix backplanes with integrated IC circuits for driving and controlling light-emitting diodes, the cathode and anode leads are typically wired directly to the pixels or to subpixels. Drive control of the pixels or subpixels is performed via a microintegrated circuit.

[0008] When an active matrix backplane is implemented, individual pixels are driven and controlled using integrated TFT circuits (TFTs = thin-film transistors). This application proposes various arrangement structures that allow for shorter lead wires to obtain high switching times. Furthermore, common connections between the cathode and anode are realized. The arrangement structures and concepts disclosed herein are suitable for a variety of applications. These include, for example, automotive applications, display devices such as displays and video walls, and generally various lighting fixtures. In this case, the optoelectronic structural elements may be configured separately or monolithically, and it is essential that their edge lengths be in the range of, for example, 200 μm to 500 μm or more than 500 μm. Within this range, the structural elements can be easily fabricated or transferred.

[0009] In certain applications, directional light or radiation is important. In these applications, in addition to preventing crosstalk (Uebersprechen) between adjacent elements, the light should be directional, i.e., directed in a specific direction. This aspect is important in the automotive sector because the resulting light cone may be controlled by the upstream optical system. Scattered light can blind oncoming vehicles, but this is mitigated by directional radiation.

[0010] On the other hand, in displays, or many surface displays, a defined radiation pattern should be achieved. The light generated in a photoelectronic structure or LED should not interact with adjacent photoelectronic structures, and on the other hand, it is desirable to extract the light in order to optimize the optical efficiency at a given current intensity. In the following embodiments, various measures are presented to improve the radiation pattern of a photoelectronic structure or a configuration structure equipped with such a structure, by means of a reflective layer or other measures.

[0011] Some optoelectronic structures emit light laterally. This effect is often undesirable because it can cause crosstalk and interference between adjacent structures, or other effects that worsen the visual impression. Furthermore, scattered light can sometimes be directed in undesirable directions by lenses or other optical shaping elements. Finally, it is desirable to make as much of the generated light as possible usable. Moreover, many applications require a Lambertian emission pattern for displays; that is, it is particularly desirable that the display has the same brightness regardless of the viewing direction. A non-Lambertian emission pattern can be achieved by strong edge-side emission from the chip.

[0012] Optoelectronic structures are realized in particular with a vertical design, i.e., a design with one contact each on the top and bottom surfaces of the chip. To electrically connect a so-called vertical LED to a substrate, a so-called "top contact" must be deposited and patterned on the second contact of the LED (either not facing the substrate or on the top side). In this case, a planarization layer and / or passivation layer are similarly used around the chip. However, it should be noted here that the present invention, in particular the reflective structure, is not limited to the structural form of a vertical optoelectronic structure. Rather, the following embodiments, for example, the arrangement structure of the reflector structure, can also be realized in optoelectronic structures (so-called horizontal LEDs) where the contacts are located on the same side.

[0013] According to a first embodiment, a method is proposed for manufacturing a photoelectron arrangement structure having at least one photoelectron structural element. This structural element may be a light-emitting diode, and its light is emitted at least partially laterally with a component parallel to the active layer. In this method, a first contact region and a second contact region are patterned on one side of a substrate. The photoelectron structural element is similarly applied to the substrate or generated thereon by patterning from multiple semiconductor layers.

[0014] Next, a first metal mirror layer and a second metal mirror layer are provided. The first metal mirror layer electrically connects a contact layer provided at the second contact of the photoelectronic structure element to the second contact region, and the second metal mirror layer is formed on a reflector structure disposed on a substrate. The reflector structure can be obtained from a later patterned planarization layer. In some embodiments, the reflector structure surrounds the photoelectronic structure element at a distance. In other embodiments, a portion of the planarization layer may be patterned to surround the photoelectronic structure element.

[0015] In one embodiment, the proposed arrangement structure includes an optoelectronic structural element electrically contacted, particularly by a first metal mirror layer, and a reflector structure coated with a second metal mirror layer, particularly surrounding the optoelectronic element.

[0016] According to a second embodiment, a configuration is proposed having at least one photoelectronic element, wherein a first contact of a vertical photoelectronic element is connected to a first contact region on one side of a substrate. On the same side of the substrate, a second contact of a vertical photoelectronic element not facing the substrate is connected to a second contact region by a contact layer, particularly a translucent contact layer and a first metallic mirror layer. Furthermore, a reflector structure is formed that has a second metallic mirror layer on its side flanks and surrounds the photoelectronic element at a distance. In some embodiments, the reflector structure includes reflective sidewalls, which can be angled to change the direction of light. In other embodiments, the sidewalls may have a nonlinear gradient, for example, a square or parabolic gradient.

[0017] By utilizing the processing of the second contact or top contact, an optical extraction structure can be created on the substrate in the same steps. In this case, the top contact is formed by the second contact, contact layer, first metal mirror layer, and second contact region of the optoelectronic structure element. Here, the first metal mirror layer electrically connects the contact layer provided on the second contact of the optoelectronic structure element to the second contact region.

[0018] Here, a light extraction structure is formed by a reflector structure coated with a second metal mirror layer. Further light extraction structures may be provided by arrangement structures, in particular by lenses positioned in the beam path of the optoelectronic structural elements. Thus, the lenses are positioned such that light strikes the lens either after being reflected by the structure or directly from the structural elements.

[0019] To create the top contact, the optoelectronic structural elements are first embedded in the planarization layer. These can then be exposed by photolithography in the second contact or second contact region for the top contact (upper contact) on the substrate. This patterning process is then used in the same step to form the reflector, specifically the reflector structure, on the substrate from the planarization layer. After depositing the transparent contact layer, a patterned metal mirror layer can be applied as a metal bridge between the second contact and the second contact region. This is necessary because the contact layer is not suitable for filling large height differences. This metallization process can also be used to simultaneously mirror-coate the reflector structure.

[0020] In this way, a separate lithography process for forming the reflector, as in conventional methods, is unnecessary, resulting in cheaper and faster display manufacturing. By preparing the reflector from a planarization layer with a top-contact metal mirror layer, efficiency and contrast are improved, and the display's radiation pattern can be enhanced without the need for additional processing.

[0021] The embodiments of the reflective layer or mirror presented above can also be applied to or added to other designs of LEDs and optoelectronic structural elements, such as vertical LEDs with the circumferential structure shown below, as previously indicated.

[0022] According to a first embodiment, a device is proposed comprising a substrate and a photoelectronic structural element fixed to one side of the substrate. This device has an electrical contact on the side not facing the substrate that is electrically connected to an electrical control contact by a mirror coating, and the mirror coating at least partially covers the substrate surface facing the structural element.

[0023] Thus, the mirror coating serves two functions: on the one hand, directing light in the direction of emission, and on the other hand, transporting current. A common cover contact or common cover electrode enables high-speed switching times for various applications such as displays. This allows for the provision of pulse-width modulation dimmer concepts that particularly improve panel efficiency, along with improvements in optical parameters such as the angle dependence of light emission and contrast.

[0024] In a method for manufacturing such a configuration structure, first, a substrate having numerous contacts on its surface is prepared, and a photoelectronic structure element is mounted on one of these contacts. Conventional transfer and mounting techniques, partially presented in this disclosure, can be used for this mounting. The photoelectronic structure element is mounted as a vertical structure element, and one of the substrate surfaces similarly includes contacts. A mirror coating layer is formed on the substrate surface, electrically connected to the electrical control contacts on the substrate surface and covering the surface at least partially. In the final step, a transparent cover electrode, electrically in contact with the mirror coating layer, is formed on an additional contact.

[0025] Furthermore, the use of mirror coatings, combined with the cavity structure, can achieve improved current diffusion, increased current transport capability, and reduced switching time. In this case, such cavities also play a role in improving extraction efficiency, angle dependence of light emission, and contrast. For this purpose, in some embodiments, the substrate includes protrusions surrounding the photoelectronic structure elements. Alternatively, instead of protrusions, cavities may be provided on the substrate surface on which the photoelectronic structure elements are arranged. In addition to one photoelectronic structure element, three photoelectronic structure elements may also be surrounded or arranged to collectively form pixels as subpixels.

[0026] In any case, the optionally chamfered side surfaces of the cavity or the convex portion are provided with a mirror coating. This structure is the same as described above. The angles of these side surfaces with respect to the substrate surface can take different values according to the desired characteristics. In particular, this angle can also be changed so that the side flanks become parabolic or other non-linear gradients. In some embodiments, the mirror circuit structure disclosed in the present application can be used. The height of the convex portion or the depth of the cavity is selected so that the optoelectronic structure element is at the same height as the upper surface of the convex portion or the cavity. Thereby, the cover electrode can be closed. This is particularly advantageous when the mirror coating is disposed on the upper surface and the cover electrode is placed on the mirror coating layer. Thus, the cover electrode forms a transparent carrier structure in some embodiments.

[0027] In some embodiments, the space between the optoelectronic structure elements or the region within the convex portion or the cavity is filled with a transparent insulating layer, and thus this insulating layer surrounds the structure element. In particular, the transparent insulating layer is closed at the height of the contact opposite to the structure element, so that the cover electrode is placed on the insulating material.

[0028] In some embodiments, the substrate surface and optionally the mirror surfaces arranged on the circuit structure surround not only one but also a plurality of structure elements. These may be configured as redundant chips so that each other chip can take over the function even if one chip fails. A more uniform radiation is generated by the mirror surfaces arranged in the circumferential direction. Similarly, a plurality of structure elements for generating light of different wavelengths may be arranged inside the mirror surfaces arranged in the circumferential direction. The mirror circumferential surface can separate different pixels of the video display device from each other and reduce the light leakage between the pixels. Such separation presented here can also be realized in a pixelated array and is used, for example, in automotive lighting fixtures.

[0029] The mirror coating is connected in series with the control contacts of the cover electrode and the substrate, and includes a highly reflective material composed of, in particular, Al, Ag, AgPdCu, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, Zn and alloys or combinations thereof. These also effectively expand the current. The cover electrode may have a material composed of a transparent conductive oxide layer, particularly ITO, IGZO. Other examples of cover electrode materials include, for example, metal oxides, zinc oxide, tin oxide, cadmium oxide, indium-doped tin oxide (ITO), aluminum-doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O such transparent conductive oxides, or mixtures of different transparent conductive oxides can be mentioned.

[0030] The transparent insulating layer may include SiO or other insulating transparent materials described herein.

[0031] According to a further configuration, the direct electrical contact between the cover electrode and the mirror coating may be constructed by overlapping and contacting the surface of the cover electrode and the mirror coating surface, particularly at the surface of the convex portion or the end of the concave portion or cavity. In this way, a highly reliable low-impedance contact can be provided. In particular, when a plurality of such cavities or convex portions are arranged in series, the cover electrode may be placed on a plurality of mirror coating layers. Thereby, current can be introduced over a wide range and at a plurality of positions on the cover electrode.

[0032] In some embodiments, the mirror coating layer extends partially along the surface of the substrate, particularly around one or more optoelectronic structural elements. Thereby, reflection is enhanced over a wide range on the substrate surface.

[0033] To ensure contact, in some embodiments, direct electrical contact between the cover electrode and the mirror coating is provided by through-hole vias or vias in the mirror coating material via a planarization layer and / or insulating layer. Additional process steps to achieve metallic contact between the conductive oxide of the cover electrode and the contact area on the backplane / substrate are omitted. For example, a simple bridge can be constructed from the ITO cover contact to the CrAl contact area for ACF bonding. This allows for further cost reduction. These through-hole vias may also be implemented as openings. However, in other configurations, structures such as trenches may be provided in the transparent insulating layer, with a conductive reflective layer for contact on its inner wall. This provides good electrical contact on the one hand, and on the other hand, a reflective structure is formed, resulting in good light reflection in some areas, as well as reduced optical crosstalk.

[0034] The insulating layer may be chamfered at the edge of the pixel, exposing the mirror coating layer. The cover electrode extends along this inclined surface and contacts the mirror coating layer. In this way, a more compact structural mode can be provided. The flank or inner wall of the opening has an angle corresponding to the desired radiation pattern. These may correspond to those disclosed herein. In this way, further material damage at the transition edge can be avoided.

[0035] In other embodiments, the manufacture of a pixel or module containing multiple such arrangement structures arranged in rows and columns is involved. Each pixel may be embedded in a cavity or surrounded by a protrusion. Thus, a cover electrode can be used as a common connection point for multiple such arrangement structures. Furthermore, an extraction structure may be provided on the cover electrode. Moreover, such a cover electrode may form a carrier structure through which light is extracted.

[0036] As an alternative structure, it is necessary to mention photonic structures, in particular, that are suitable for further collimating light. A converter can also be provided on the cover electrode. In this way, for example, a photoelectronic structure element that generates blue light can be used, and this light can be converted in the conversion layer. In this case, an additional reflective structure can be assembled on the cover electrode to avoid optical crosstalk to other pixels. Furthermore, a photonic structure that collimates the converted light can also be considered.

[0037] Previous efforts to improve light extraction have focused particularly on the directionality of emitted light. However, many applications require a Lambertian radiation pattern. Ideally, the light-emitting surface should have uniform irradiance within its area, meaning that the distribution of radiant intensity is circular in the vertical direction. To the viewer, this area appears equally bright regardless of the viewing angle. In addition, such a uniform distribution can be easily reshaped by a downstream light shaping element.

[0038] Therefore, a configuration structure has been proposed that has a flat carrier substrate and at least one optoelectronic structure element, and is configured to be extracted from the back. In this case, the optoelectronic structure element forms an element such as a light-emitting diode for generating light. The flat carrier substrate is understood to be, for example, a silicon wafer, a semiconductor material such as LTPS or IGZO, an insulating material, or a suitable flat carrier structure that can accommodate a number of optoelectronic structures arranged side by side on its surface.

[0039] The function of such a carrier substrate is, in particular, to accommodate functional elements such as power supplies, electrical contacts, leads, and terminals for ICs, electronic devices, and optoelectronic structures, but also to accommodate light-emitting diodes or optoelectronic structures that emit light. Here, the carrier substrate may be rigid or flexible. Typical dimensions of the carrier substrate may be, for example, a thickness of 0.5 to 1.1 mm. In addition, polyimide substrates in the range of 15 μm in thickness are also known.

[0040] At least one optoelectronic structure element is disposed on the mounting surface of the carrier substrate. In other words, the carrier substrate has two opposing main surfaces, which are referred to here as the mounting surface and the display surface or light-emitting surface. The mounting surface means a designated surface of the carrier substrate that accepts or to which at least one optoelectronic structure element is attached. In some embodiments, the carrier substrate may optionally have further optical or electrical / mechanical components or layers.

[0041] The display surface refers to the surface of the carrier substrate that faces the viewer or from which light generated by the structural elements is emitted. Furthermore, the carrier substrate plane is described as extending on the same plane parallel to the two main surfaces of the carrier substrate. At least one optoelectronic structural element is configured so that light is emitted across the carrier substrate plane and away from the carrier substrate. However, this characteristic does not exclude the emission of light components directly or indirectly in the direction of the mounting surface of the carrier substrate.

[0042] The placement structure further includes flat reflector elements. This is based on the idea that reflection allows for a more uniform spatial distribution of light on the surface of the placement structure. For this reason, the reflector elements are spatially positioned on the mounting surface relative to at least one optoelectronic structure element, and their shape and characteristics are configured such that light emitted from at least one optoelectronic structure element is reflected towards the carrier substrate.

[0043] In other words, the reflector element is positioned around at least one photoelectronic structural element in a region from which light emitted by the structural element is emitted. According to one embodiment, the reflector element may be a separately applied prefabricated microelement. Alternatively, the reflector element may be realized with a cavity sidewall and a reflective layer. The above configuration of the cavity and mirror coating layer forms one configuration of such a reflector element. Typical dimensions of such a reflector element can be in the range of 200 μm to 700 μm, particularly 300 μm to 600 μm in diameter, depending on the configuration modification. According to one embodiment, the reflector element is configured as a reflective coating or layer of at least one photoelectronic structural element. In this regard, according to one embodiment, at least one photoelectronic structural element may have a transparent or partially transparent coating on its surface, such as IGZO, and a reflective layer is further applied on this coating.

[0044] This arrangement structure is particularly suitable for generating pixels for displays, or for lighting applications in the automotive sector.

[0045] The reflective layer may be composed of, for example, a metallic material, or it may contain a mixture of metals. Here, in order to achieve a high yield, it is required that as much of the light emitted by at least one optoelectronic structure element as possible be reflected. The carrier substrate is configured to be at least partially transparent, so that the light reflected by the reflector element strikes the surface of the mounting side of the carrier substrate and propagates through the carrier substrate. This light is at least partially emitted from the display surface on the opposite side of the carrier substrate and can therefore be perceived as pixels by the viewer.

[0046] In other words, the emitted light is extracted from the back or rear of the display surface opposite the carrier substrate. Reflection, refraction, and possibly attenuation effects can achieve more uniform illumination and a more homogeneous distribution of brightness. According to one embodiment, the reflector elements are arranged and configured so that a Lambertian radiation pattern is achieved.

[0047] In one embodiment, the reflector element has an additional diffuser layer on the side facing at least one photoelectronic structure element. This is particularly intended to scatter the light reflected from at least one photoelectronic structure element. Alternatively or additionally, the reflector material has diffuser particles. Diffusion means achieving further scattering or distribution of light in the surrounding spatial region. This further favorably influences the scattering or distribution of light, allowing for a more uniform or uniform distribution of light intensity, particularly on the display surface of the carrier substrate.

[0048] The diffuser layer may be understood as an additional layer on the reflector element and may be uniform throughout, but may be interrupted or applied only partially. In one embodiment, the diffuser layer and / or diffuser particles have Al2O3 and / or TiO2. Due to their structural properties, these materials can assist in the diffusion of emitted light. The diffuser layer may be applied only to the surface of the reflector, but the diffuser particles may be mixed in as part of the material of the entire reflector, for example, and thus may be easier to manufacture.

[0049] In one embodiment, the reflector element surrounds at least one photoelectronic structure element or light-emitting diode in a circular, polygonal, or parabolic manner. This is in view of the fact that at least one photoelectronic structure element often has a spatially wide radiation pattern. That is, light starts from a small area and is emitted at a wide angle. Therefore, it is preferable that as much of this emitted light as possible be detected by the reflector element and redirected or reflected toward the display surface of the carrier substrate. In this regard, for example, it may be proposed that at least one photoelectronic structure element includes a first light-emitting diode and a second light-emitting diode provided for redundancy. The latter can take over the function of the first light-emitting diode in the event of a manufacturing problem. In this way, the reflector element surrounding both photoelectronic structures provides a uniform radiated light beam regardless of which photoelectronic structure element is operating during operation. In another embodiment, the reflector element surrounds at least three separate photoelectronic structures that emit different colors during operation. Therefore, reflector elements may be provided corresponding to each pixel of a device such as a display, display device, or pixel array.

[0050] Depending on the radiation pattern of at least one photoelectronic structural element, according to one embodiment, the shape of the reflector element can be arc-shaped, circular, dome-shaped, cap-shaped, etc. Thus, according to one embodiment, the reflector element may be composed of one piece or multiple pieces, or may have notches or interruptions. In another example, the reflector element has different reflection properties depending on the wavelength of light. This is achieved, for example, by the structure of the reflector element or its structural properties.

[0051] In one embodiment, the reflector element is formed as a plane positioned at least partially parallel to the carrier substrate plane on at least one photoelectronic structure element. In one embodiment, the reflector element forms an electrical contact with at least one photoelectronic structure element. A point to consider here is that, since the reflector element is made of, for example, a metallic material, simultaneous use as a connecting contact for the photoelectronic structure element is conceivable. For this purpose, in one embodiment, electrical contact with a photoelectronic structure element which is one of the terminals is intended.

[0052] In one embodiment, the reflector element is configured and formed so that at least 90% of the light emitted by at least one optoelectronic structure element is incident on the mounting surface of the carrier substrate at an angle of 45° to 90° with respect to the carrier substrate plane. In one embodiment, this percentage is at least 95%, and in another, at least 80%. The rationale behind this is the demand for the highest possible yield. In other words, it means that as much of the light emitted from at least one optoelectronic structure element as possible needs to come out onto the display surface of the carrier substrate.

[0053] One effect that can occur with flat, transparent, or partially transparent substrates is total internal reflection. This means that light incident at an acute angle on the surface of the mounting surface is refracted as it enters the denser carrier substrate medium. As a result, light is reflected multiple times within the carrier substrate between the mounting surface and the display side, and does not exit the carrier substrate further because the angle to the interface is too acute. These proportions are usually considered losses. To avoid these losses, it may be desirable for light to strike the surface of the carrier substrate on the mounting surface at the widest possible angle, ideally perpendicular. Therefore, reflector elements are configured to provide these angular relationships and reduce crosstalk, in particular, between pixel elements. In one embodiment, the carrier substrate may be polyimide or glass. Polyimide is a material that can be used particularly in flexible displays. Glass can be a mechanically very stable base material for rigid displays.

[0054] In one embodiment, an additional passivation layer is provided to attenuate or eliminate reflections at the mesa edge of at least one optoelectronic structure element. A mesa edge is understood to mean a generally steep wall or contour that forms the boundary of at least one optoelectronic structure element, whose surface is positioned across the carrier substrate plane. To avoid crosstalk, it is desirable that light does not enter each adjacent pixel element. Therefore, it is useful that the light component emitting in this direction is excluded or at least attenuated by the corresponding attenuation or passivation layer. The advantages here may be improved contrast and reduced optical crosstalk.

[0055] In one embodiment, a light-absorbing coating is provided on the mounting surface and / or display surface of the carrier substrate, outside the reflector element. To improve contrast and enhance the impression of dark colors, it is generally desirable for inactive regions between structural elements, particularly different pixels, to block or attenuate light. Therefore, the light-absorbing coating is placed outside the reflector element. According to one embodiment, the display surface of the carrier substrate has roughened or uneven and / or a roughened structure. This structure is such that it produces a scattering or diffusion effect with respect to the wavelengths of the respective relevant light spectra. This can result in the advantage that, for example, a higher proportion of the light transmitted through the carrier substrate is extracted at the display surface. This rough structure creates more favorable structural angular conditions that enable more effective extraction.

[0056] In one embodiment, a color filter element is arranged on the display surface of a carrier substrate so as to face a reflector element. This color filter element can allow the primary color spectrum of at least one photoelectronic structure element to pass through while attenuating other color spectra. This has the advantage of improving color reproduction and contrast by removing the light components of adjacent pixel elements of different colors.

[0057] Furthermore, a method for manufacturing optical pixel elements is proposed. Here, first, at least one optoelectronic structural element is mounted on the mounting surface of a flat carrier substrate. Then, for example, a reflector element is created as a reflective layer of at least one optoelectronic structural element. Alternatively, a reflector element can be formed on the sidewall surrounding the structural element and connected to a transparent cover electrode. In this case, the transparent cover electrode also forms a flat carrier substrate. According to one embodiment, before at least one optoelectronic structural element is mounted on the carrier substrate, the display surface of the carrier substrate is treated for patterning and / or roughening. The advantage of this is that the surfaces can be finished at a stage before more sensitive electronic and optical components are applied to the mounting surface. [Brief explanation of the drawing]

[0058] The following sections will provide a more detailed explanation of some of the aspects mentioned and summarized above, using various configurations and examples. [Figure 1] This figure shows various steps of one example configuration of a proposed manufacturing method for a photoelectronic structural element having a circumferential reflector structure. [Figure 2] This figure shows a cross-sectional view of a first configuration example of a device or array having two optoelectronic structural elements and a reflector structure disposed between them, according to several aspects of the proposed concept. [Figure 3] This is a plan view showing a part of the first configuration example of the arrangement structure based on the proposed principle. [Figure 4]This figure shows a cross-sectional view of a second configuration example of the proposed device and a reflector structure placed between them and covered with a reflective structure. [Figure 5] This figure shows a cross-section of the first example configuration of the proposed electrically contacted optoelectronic structure element. [Figure 6] A cross-sectional view shows a further aspect of the concept in a third configuration example of the proposed device or array. [Figure 7] This figure shows a cross-sectional view of a fourth example configuration of the proposed device or array. [Figure 8] This is a plan view of the device configuration to illustrate further embodiments. [Figure 9] This is a plan view of a further configuration example of the proposed device. [Figure 10] This figure shows a cross-sectional view of an example configuration of optoelectronic structural elements arranged in the proposed array or device. [Figure 11] This figure shows a cross-sectional view of an example configuration of optoelectronic structural elements arranged in the proposed array or device. [Figure 12] This figure shows a cross-sectional view of an example configuration of optoelectronic structural elements arranged in the proposed array or device. [Figure 13] Figures 11 and 12 show examples of the configuration as plan views. [Figure 14] For example, this diagram shows an arrangement of three vertical photoelectronic structural elements, each equipped with a circumferential structure and a cover electrode, according to several conceptual designs for forming pixels. [Figure 15] This figure shows a further configuration similar to Figure 14, having additional converters and light extraction structures, and thus represents a further embodiment of the present disclosure. [Figure 16] This is a plan view of the device shown in the previous figure. [Figure 17] This is a cross-sectional view of a portion of an array comprising multiple arrangement structures and cover electrodes. [Figure 18]This is a second example of a pixel configuration comprising multiple optoelectronic structural elements and a transparent cover electrode, according to a further aspect of the proposed principle. [Figure 19] This is a plan view of the configuration shown in the previous diagram. [Figure 20] This figure shows a cross-sectional view of a third configuration example of the arrangement structure, which similarly includes multiple photoelectronic structural elements equipped with transparent cover electrodes. [Figure 21] This is a plan view of the configuration example shown in the previous figure. [Figure 22] This diagram shows a further configuration of pixels according to the concept proposal. [Figure 23] This is a plan view of the configuration example shown in the previous figure. [Figure 24] This figure shows a process flow with different steps for manufacturing pixels according to the proposed principle. [Figure 25] This figure shows a photoelectron arrangement structure having a spherical reflector element and a drive control electronic circuit, according to several aspects of the concept proposal. [Figure 26] This figure shows a second configuration of a photoelectron arrangement structure having reflector elements and passivation layers configured as layers, according to several aspects of the concept proposal. [Figure 27] This figure shows a third configuration of a photoelectron arrangement structure in which light-absorbing coatings are applied to both the display surface and the mounting surface of the carrier substrate, according to several aspects of the concept proposal. [Figure 28] This figure shows a photoelectron arrangement structure as a pixel element, where the display surface of the carrier substrate has been roughened. [Figure 29] This figure shows a configuration according to some embodiment disclosed herein, comprising a light-absorbing layer for minimizing crosstalk and a color filter element on the display surface of a carrier substrate. [Figure 30] This figure shows a configuration according to some embodiment disclosed herein, comprising a light-absorbing layer for minimizing crosstalk and a color filter element on the display surface of a carrier substrate. [Figure 31]This figure shows an exemplary configuration of an optoelectronic arrangement structure, according to several aspects of the concept proposal, comprising an IGZO or LTPS-based drive control electronic circuit and an optional diffuser layer on the mounting surface of a carrier substrate. [Figure 32] This figure shows an exemplary configuration of an optoelectronic arrangement structure, according to several aspects of the concept proposal, comprising an IGZO or LTPS-based drive control electronic circuit and an optional diffuser layer on the mounting surface of a carrier substrate. [Figure 33] These are cross-sectional and plan views of a cell equipped with three photoelectronic structural elements and a reflector element of different colors. [Figure 34] This figure shows the method for manufacturing the photoelectron arrangement structure described in the previous configuration.

[0059] Detailed explanation In certain applications, directional light or radiation is important. In these applications, in addition to preventing crosstalk between adjacent elements, the light should be directional, i.e., directed in a specific direction. This aspect is important in the automotive sector because the resulting light cone may be controlled by the upstream optical system. Scattered light can blind oncoming vehicles, but this is mitigated by directional radiation.

[0060] On the other hand, in video display applications such as displays and video walls, it is necessary to avoid crosstalk of light between adjacent pixels. Light sometimes emanates laterally from optoelectronic structures, and as a result of crosstalk, the contrast of the display or video wall decreases. Similarly, light emitted or radiated laterally due to abrupt changes in refractive index sometimes does not exit the structure. Furthermore, in many applications, the radiation pattern of the display is required to be Lambertian so that the display appears to have the same brightness regardless of the viewing direction. Therefore, it has been proposed to improve the radiation pattern by providing a reflective layer or mirror around the active layer or optoelectronic structure. In other words, the radiation pattern can be improved by providing a circumferential mirror around the optoelectronic structure.

[0061] figure 2 This shows a YZ cross-sectional view of a first configuration example of the proposed arrangement structure. This can be manufactured, for example, by the method described herein. In the YZ cross-sectional view, two electrically contacted photoelectronic structural elements 3a and 3b are fabricated on a substrate 1, and a reflector structure 4b is formed in the central region between the two fabricated photoelectronic structural elements 3a and 3b on the substrate 1. The flank angle of the reflector structure 4b is adjusted to the desired light extraction. For example, the flank portion may strongly depend on the distance between the photoelectronic structural elements and the reflector structure 4b. The two electrically contacted photoelectronic structural elements 3b, together with the central coated reflector structure 4b, each form a photoelectronic arrangement structure OB. In contrast to structural element 3a, structural element 3b can emit light of other wavelengths. Reference numeral 4a' indicates an enclosure portion. In this configuration, it is obvious that further structural elements, for example three structural elements, can be arranged to form subpixels of display pixels.

[0062] In this example configuration, the components are epitaxially grown on substrate 1, but it is also possible to fabricate them separately and then place them on substrate 1. As part of the manufacturing process, a second metal mirror layer 6b is coated on the flank portion of the reflector structure 4b along with the first metal mirror layer 6a of the optoelectronic structural element, resulting in the structure shown in the figure.

[0063] The reflector structure 4b is fabricated from the planarization layer 4. Similarly, each optoelectronic structure element includes a first metal mirror layer 6a that acts as a metal bridge connecting the second contact region 2b to the contact layer 5 of the second contact of the structure element. The second metal mirror layer 6b covers only the flank portion of the reflector structure 4b, and furthermore, to avoid short circuits with conductor tracks on the substrate 1, the second metal mirror layer 6b may leave a region near the substrate 1 open. The substrate 1 may further include an electrical structure for driving and controlling the optoelectronic structure elements, as described in this application. If the substrate is made of or contains Si or other materials that are generally incompatible with optoelectronic structure elements, a matching layer is also provided. That is, the optoelectronic structure elements are either fabricated directly on the carrier 1 or transferred onto the carrier. Various transfer processes, for example, using a stamping process, are suitable for these.

[0064] Figure 3 shows a first configuration example of the proposed photoelectron arrangement structure OB as a plan view in the XY plane. This plan view is shown in Figure 2 This may represent the left photoelectronic structure element with the circumferential reflector structure described. This photoelectronic structure element is a subpixel, which together with others forms one pixel each in a display or video wall. The latter is another pixel arranged in multiple rows and columns.

[0065] In this case, each pixel contains an arrangement structure and optoelectronic structural elements of the same structure, and they are individually driven and controlled by appropriately electrically connecting them. As shown in Figures 2 and 3, the optoelectronic device OB has a reflector structure 4b coated with a second metal mirror layer 6b, which surrounds the optoelectronic structural elements. For this reason, the optoelectronic structural elements are positioned in the center. Other geometric shapes such as rectangles, circles, triangles, or polygons are also possible.

[0066] Here, the flank portion of the reflector structure 4b facing the structural element 3a is covered by a second metal mirror layer 6b. In the plan view, an enclosure 4a' is shown around the structural element 3a along the XY plane, and this enclosure 4a' was formed from the same material as the planarization layer 4 as the reflector structure 4b. Starting from the contact layer 5, the first metal mirror layer 6a extends, particularly in the form of a strip, to a second contact region 2b formed on the substrate 1, which may be covered with a coating 7 for sealing or encapsulation. Exemplarily, an electrical conductor track 9 is shown to which the second contact region 2b may be electrically connected. The metal mirror layers 6a and 6b may have the same material or the same layer stack.

[0067] Figure 4 shows a second example configuration of the proposed array in a cross-sectional view in the YZ plane. 2 In contrast, here the reflector structure 4b is covered with a second metallic mirror layer 6b along its entire original free surface. That is, not only the sides but also the main surface not facing the substrate 1 is covered with a continuous second metallic mirror layer 6b. The optoelectronic structure element in Figure 4 is shown in Figure 2 It is structured in the same way.

[0068] Figure 5 again shows the essential aspects of the optoelectronic structure element in a cross-sectional view along the YZ plane. On one side of the substrate 1 extending along the XY plane, a first contact 2a is connected to the semiconductor layer 3a of the optoelectronic structure element. An active zone is also present in layer 3a. A second contact is formed by a transparent layer 5 which is electrically connected to the first metal mirror layer 6a. Along the XY plane, an electrically insulating enclosure 4a' is formed around the main body 3a in mechanical contact with it, and along this enclosure, the contact layer 5 and the first metal mirror layer 6a extend particularly in a strip shape.

[0069] The substrate 1 may be a semiconductor itself, or it may include an electrical structure for drive control. Alternatively, it may be fabricated as a passive matrix backplane or an active matrix backplane, and may have, for example, glass, polyimide, or a PCB (printed circuit board; Leiterplatten). The first contact region 2a for contacts near the substrate may have, for example, Mo, Cr, Al, ITO, Au, Ag, Cu, and alloys thereof. Similarly, the second contact region 2b for the second contact of the optoelectronic structural element 3a that does not face the substrate 1 may have, for example, Mo, Cr, Al, ITO, Au, Ag, Cu, and alloys thereof.

[0070] The optoelectronic structures shown here are realized using the same or different material systems and emit different colors of light during operation. For example, red, green, and blue (RGB), red, green, blue, and white (RGBW) can be arranged on the substrate 1. By using conversion materials, the same light-emitting diode can produce different light. Reference numeral 4a' indicates the remainder of the planarization layer 4 to provide an enclosure 4a' on which a contact layer 5 for the top contact can be provided. The enclosure 4a' can optionally also passivate the mesa edge of the semiconductor layer of the main body 3a using, for example, a spin-on dielectric or photoresist (Fotolack).

[0071] Figure 6 shows a third configuration example of the proposed arrangement structure in a cross-sectional view along the YZ plane. In contrast to the first configuration example described in Figure 2 and the second configuration example described in Figure 4, the reflector structure 4b is not formed here. On the other hand, a coating 7 is formed for sealing / encapsulation and / or light extraction of the contacted photoelectronic structural elements 3a,3b. Here, to improve the radiation pattern, layer 7 is patterned (not shown) and has a photonic crystal structure from above. Layer 7 is electrically insulated from other structures. Coating 7 may have scattering particles or conversion material. Coating 7 is usually applied after the fabrication of the photoelectronic structural elements and then planarized.

[0072] Figure 7 shows a cross-sectional view along the YZ plane of a fourth configuration example of the proposed arrangement structure. This depiction is shown in Figure 6 This is similar to the above. To supplement this, a black potting area 8 is formed between the photoelectronic structural elements 3a and 3b under a coating 7 provided for sealing / encapsulating and / or extracting light from the contacted light-emitting elements 3a and 3b. The coated reflector structures 4b are not shown here. These reflector structures 4b may be formed in other areas of the array not shown here.

[0073] Figure 8 is a plan view of an example configuration of a part of a display or lighting fixture having multiple such arrangement structures, each grouping together to form four pixels. In this example, particular attention is paid to the shape and arrangement of the reflector structures 4b. According to Figure 8, each subpixel having an optoelectronic structure element is individually bordered by a reflector structure 4b having a second metallic mirror coating 6b. In this example, the distance between the reflector structure 4b and each optoelectronic structure element is twice the chip edge length. However, other distances are possible, and in particular, subpixels may be surrounded by reflector structures at a distance of only a few micrometers.

[0074] Each pixel contains three subpixels 3a, 3b, and 3c that emit red, blue, and green light, respectively. The pixels are identical in shape and arranged in rows and columns. In this way, the pixels form a part of the display or a module of such a display. To avoid visible artifacts during illumination that may occur due to the periodic arrangement of subpixels, the subpixels 3a, 3b, and 3c may be arranged differently or permutatively from the depiction shown herein. Furthermore, the shape of the reflector structure 4b is not limited to a square outline.

[0075] Figure 9 shows a plan view of a sixth configuration example of the proposed array. In this case, the reflector structure 4b is configured to surround the entire pixel together with, for example, the photoelectronic structural elements 3a, 3b, and 3c. Because of this difference in distance, the flank angle of the coated reflector structure 4b is different from that of the configuration in Figure 8. If necessary, the flank angle of the centrally located reflector structure can also be made different from that of the surrounding frame. However, it should be noted that in any configuration, a considerable number of such structures are combined to form pixels.

[0076] Figures 10-10 11 This shows further examples of optoelectronic structural elements that can be configured as subpixels, combined, and surrounded by a reflector structure.

[0077] In Figure 10, the photoelectronic structural element has an additional metal mirror layer 6c formed on the side flank of the enclosure portion 4a. The side flank forms a truncated pyramid and tapers towards the top. Furthermore, the metal mirror layer can also serve as a contact for contact 5. Figure 11 shows the second configuration example already described. Figure 12 shows the third configuration example. In this example, the flank portion of the reflector structure 4a is also chamfered, but the circumference increases as the distance from carrier 1 increases. The shape of the side and its steepness adjust the extraction of light emitted from the main body.

[0078] Figure 13 is a plan view of a further configuration example based on the third configuration according to Figure 12. In this example, the second metal mirror layer 6c applied to the reflector structure 4a is surrounded and bordered by a black layer 8, particularly black potting. This may extend, for example, to the vicinity of the substrate 1 at the base of the reflector structure 4a. Furthermore, a coating 7 for sealing and light extraction is deposited on the surface. The flank portion of the reflector structure 4a is covered with the second metal mirror layer 6c. Starting from the contact layer 5, the first metal mirror layer 6a extends, particularly in the form of a strip, to a second contact region 2b formed on the substrate 1, which may be covered with an optically transparent coating 7 for sealing or encapsulation. Exemplarily, an electrical conductor track 9 is shown, to which the second contact region 2b may be electrically connected. The metal mirror layers 6a and 6c may be made of the same material or have the same layer stack.

[0079] Figure 1 shows an example configuration of a proposed method for fabricating photoelectron arrangement structures (OB) and photoelectron structural elements. The steps shown here are also applicable to a large number of individual photoelectron structural elements, and these can be fabricated in large quantities.

[0080] In the first step S1, a first contact region 2a and a second contact region 2b are provided on one side of the substrate or carrier. The carrier itself may have internal structures such as circuits. The contact regions can be manufactured in such a way that a portion of the substrate is exposed by patterning a photoresist layer and then removing the unexposed areas. Contact regions 2a and 2b are deposited thereon, and a metallic layer is deposited thereon. Similarly, a body 3a is provided on one of the contact regions. The body 3a includes two oppositely doped semiconductor layers interposed with an active layer for generating light. In some embodiments, this body can be manufactured separately and then transferred to this region using a transfer process. In other embodiments, the body is formed by applying layers to the surface of the substrate 1 and then patterning them.

[0081] In the second step S2, a planarization layer 4 is applied to form a reflector structure 4b that completely surrounds the main body 3. If necessary, layer 4 is planarized to be flush with the surface of the main body 3a. Subsequently, layer 4 is patterned to create an enclosure 4' around the main body 3. This enclosure extends substantially to the second contact region 2b. Further, an outer edge 4b ​​is constructed at a more distant position. The side flanks of the outer edge are chamfered. The flank steepness can be used to control the direction of light extraction or reflection. In step S4, a contact surface 5 is applied to the surface of the main body 3a and the adjacent region. This contains a transparent yet conductive material.

[0082] Finally, in the fifth step S5, an electrically connected metal mirror layer 6a is applied to the contact layer 5. The metal mirror layer extends beyond the enclosure portion 4a' to the second contact region 2b and into contact with it. In addition, a second metal mirror layer 6b is simultaneously applied to the side flanks of the reflector structure 4b. By patterning and processing, no metal remains on the surface of the circumferential web 4. In other configurations, this may be patterned to obtain electrical connections between the metal mirror layers of the side flanks.

[0083] The reflective mirror configuration presented above is applicable to other designs of optoelectronic devices, for example, to vertical optoelectronic devices with the circumferential structure shown below. In this regard, Figure 14 The diagram shows the configuration of a pixel cell with a common cover electrode and a circumferential structure, which on the one hand enables fast switching time through appropriate current induction, and on the other hand emits light generated by the mirror coating in the main radiation direction. 14 The arrangement structure according to this configuration comprises three vertically oriented photoelectronic structural elements, where the first structural element 1 provides red light, the second structural element provides green light, and the third structural element provides blue light. In this way, each photoelectronic structural element forms a subpixel of the pixel cell. Although the individual structural elements are shown in a row for simplicity, other arrangement structures, such as a triangular shape, are also possible. Furthermore, the structural elements are of the same size. In one configuration, the structural elements have edge lengths in the range of 200 μm to 750 μm, and their height can be, for example, preferably 10 μm to 100 μm. Each structural element is manufactured separately and then transferred to the substrate 3 by various transfer processes. This is for convenience, as the size may differ depending on the configuration. However, it is desirable that the structural elements have the same height so that further process steps do not require additional measures. The photoelectronic structural elements are configured in a vertical structure, that is, they have two contacts on different upper and lower surfaces as shown in the figure.

[0084] The optoelectronic structural elements are arranged on a common substrate 3. Furthermore, the first contacts of the optoelectronic structural elements are electrically connected to contacts on or within the substrate (not shown). The substrate itself may be a semiconductor substrate or a backplane. Lead wires, which are wired to the contacts of the optoelectronic structural elements, are arranged within the substrate. In addition to the lead wires, power supply and / or drive control electronic circuits may be formed on the substrate. Due to the size of the structural elements, there is sufficient space for this. In some applications, such as lighting applications, further measures may be needed to dissipate the heat generated. In display or low-power consumption applications, parts of the structure and supply lines may be designed using TFT technology.

[0085] The pixel cell, which contains these three optoelectronic structural elements, is either embedded within a cavity or surrounded by an outer edge. Such an outer edge is, for example, Figures 8 and 9 This can also be seen in the figure. 14 On the left and right sides, protrusions 29 are formed on the substrate 3. These protrusions 29, which provide cavities or recesses, may be made of a non-conductive material such as polyimide. These surround the photoelectron structure element from all sides, thereby forming a photoelectron arrangement structure such as the outer edge of a pixel.

[0086] The sidewalls are slightly chamfered and extend at a certain angle to the surface normal. In addition to the linear profile of the sidewalls shown here, the sidewalls may also exhibit a parabolic profile.

[0087] Furthermore, an additional electrical insulating layer 25 is provided between the fabricated protrusions 29 and the substrate 3 to further enhance mechanical strength. A conductive mirror coating layer 7 is applied to the insulating layer or the protrusions 29. This extends not only to the sides of the protrusions 29 but also along the substrate surface and between the optoelectronic structural elements. However, since the mirror coating layers are spaced apart here, short circuits or unintentional contact with the die are avoided. In addition, a mirror coating is also provided on the upper surface of the protrusions in region 13. The mirror coating 7 is configured as a metallic mirror and may particularly include Al, Ag, and AgPdCu. Further materials may be metals or alloys from Al, Ag, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, and Zn, or alloys or combinations thereof.

[0088] Then, the spaces 15 between the protrusions or within the cavities and within the photoelectronic structural element are filled with a transparent nonconductive material 21, reaching up to the height of the second contact 5 of the photoelectronic structural element. The material 21 forms an insulating layer. The insulating layer can be applied by techniques such as spin-on-glass. Then, if necessary, the insulating material can be removed up to the height of the contact 5 and the mirror coating layer to expose them and form a flat surface. Finally, a transparent conductive layer is fabricated on the second contact 5 of the structural element and the insulating layer 21 to provide a cover electrode 11. This transparent layer may have, for example, ITO and / or IGZO. Further examples of cover electrode materials include, for example, metal oxides, zinc oxide, tin oxide, cadmium oxide, indium-doped tin oxide (ITO), aluminum-doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O 12 These may be transparent conductive oxides, or mixtures of different transparent conductive oxides.

[0089] The cover electrode 11 extends to cover the entire insulating layer 21 and overlaps with the mirror coating layer in region 13. Good current coupling occurs due to broad direct contact with the underlying metal mirror 7, thus reducing the distance the current must travel through the transparent conductive layer 11. Therefore, even if the sheet resistance of the transparent conductive layer 11 is generally high, it has little effect. Since the surface to which the cover electrode 11 is applied is flat, the material can be easily sputtered or applied using the top-contact process "spin-on-glass (SOG)". This allows for planar coating of the ITO cover electrode 11, thus avoiding edge delamination, for example, in so-called thermal shock tests. However, in this manufacturing process, it is advantageous that both the mirror coating 7 and the contact 5 are exposed to and in direct contact with the material 11.

[0090] figure 16 This is the figure. 14 This is a plan view showing the configuration according to the diagram. Three photoelectronic structural elements are assembled in series at the center of this arrangement. These are in contact by a cover electrode 11, which is electrically in contact with the mirror coating 7 or metal mirror layer in the overlap region 13. The outer edge formed by the protrusion or cavity is substantially square. As a result, the distance of the two outer photoelectronic structural elements from the protrusion is small. In one configuration, it may be advantageous to form the outer edge as a rectangle rather. This is shown in the diagram. 16 In this region, a protrusion is positioned and is indicated by a dashed region 13a where the cover electrode is in contact with the mirror coating. This results in a more uniform distance between the photoelectronic structure element and the outer edge.

[0091] figure 17The figure shows an arrangement structure in which multiple pixels P1, P2, P3...Pn are arranged in a row. The pixels P are separated from each other by protrusions so as to reduce optical crosstalk. In the cross-sectional view, three photoelectronic structural elements 1 are formed for each pixel, and these photoelectronic structural elements 1 are formed to emit light of different wavelengths when in operation. They are fixed between the substrate 3 and the cover electrode 11 and are in electrical contact. Direct electrical contact between the cover electrode 11 and the mirror coating 7 is shown in the figure. 14 It is formed according to the configuration described above.

[0092] The mirror coating 7 is electrically connected to each cover electrode 11 of the protrusions that isolate the pixels. Outside the pixel cells and pixel rows, the mirror coating is routed to the control contact 9 at the left edge of the substrate 3. The control contact 9 forms a contact area where further contact is possible. In other examples, the contact 9 is routed to a substrate where further circuits and drive control elements are located. The metallic mirror coating reduces the sheet resistance, thus reducing the overall voltage drop across the leads. Properly routed current induction reduces parasitic capacitance, which can effectively shorten the switching time for drive control of the optoelectronic structure elements. Figure 17 The pixel arrangement structure shown further minimizes light scattering between pixels, and thus so-called optical crosstalk.

[0093] figure 18 The figure shows a further configuration of the proposed device. 14 ~Figure 17The same reference numerals indicate the same features. In this configuration, there are no protrusions or cavities on the substrate; that is, the mirror coating and lead wires extend substantially planarly along the surface of the substrate 3. Three optoelectronic structural elements 1 are arranged on the substrate 3 and are electrically connected to contacts (not shown). The mirror coating 7 surrounding the optoelectronic structural elements is electrically isolated from the substrate 3 by a transparent yet electrically insulating layer 25. The structural elements 1 (R, G, and B) are surrounded by an insulating layer 21, which is transparent and extends to the height of the contacts 5 of the optoelectronic structural elements in each direction on the substrate. The upper contacts of the optoelectronic structural elements 1 are electrically contacted by cover electrodes 11, which are configured as transparent ITO cover contacts, and are placed on the insulating layer. Furthermore, multiple conductive through-hole vias are constructed on the mirror coating layer 7, and the mirror coating layer 7 and the cover electrodes 11 are in electrical contact. In addition, to keep the sheet resistance low, the through-hole vias are filled with metal.

[0094] In some embodiments, the through-hole vias are simply openings in the insulating layer. However, the insulating layer may have trenches or the like that that extend to the mirror coating layer 7. If these are formed at least partially around the pixels and subsequently filled with reflective material, good current coupling as well as light guidance can be achieved. In this configuration, the height of the optoelectronic structural elements is not very important, as they do not need to match the height of the cavity or protrusion if they are the same height.

[0095] figure 19 Also, Figure 18 The structure shown is depicted in a plan view. The pixels are arranged in a square shape such that the distance from the center of the die to the edge of the pixel is approximately the same. Reference numeral 5 indicates the electrical contact 5 of the photoelectronic structural element 1 to the transparent cover electrode 11. Here too, the region around the photoelectronic structural element can be surrounded by a mirror coating 7 (not shown).

[0096] figure20 This is a cross-sectional view showing a further configuration example of the proposed device. In this example, the cover electrode 11 is formed as an ITO cover contact, which is planarly applied to the contacts 5 of each optoelectronic structural element R, G, and B. An insulating layer 21 surrounds each structural element. However, in the edge region of the pixel, the insulating layer is removed, and the side edges extend at an angle. This creates an opening 19 that reaches the mirror coating layer 7, exposing a larger area, i.e., not just a point-like area. The larger this exposed area, the larger the subsequent contact area with the cover electrode 11.

[0097] In other words, a flat insulating layer is removed in the region between the two pixels and in the region above the mirror coating layer 7. This can be done, for example, by an etching process using RIE. The fabricated opening 19 has a flank portion 23 with a flattened opening angle. Since the cover electrode 11 is applied to the insulating layer after opening, it will spread across the entire flat surface and sides of the insulating layer. Alternatively, a metal layer may be applied to the side surface that contacts the cover electrode 11 at the upper end of the insulating layer.

[0098] In the case of a thicker insulating layer 21, it is desirable that the opening 19 and its side flanks be configured such that the upper angle is relatively flattened, that is, that they form a relatively inverted cone shape. The flattened bending angle prevents "peeling" of the ITO layer 11 at the edge of the opening 19. The same applies to the angle between the side flanks and the mirror coating layer 7.

[0099] The fabricated pixel element has several such contacts and overlapping portions 13, particularly in the circumferential direction, and subpixels or pixels are similarly enclosed. Furthermore, the aperture can be provided with additional subsequent layers, such as a scattering layer or a clear coat layer with a different refractive index. In this configuration example, for example, the lateral waveguide of light emitted from the side edge of the chip can be used to extract the light, and since it does not propagate to adjacent pixels, it leads to improved contrast.

[0100] figure 21 This is the figure. 20 The configuration described above is shown in a plan view. Each of the three subpixels provided by the microlight-emitting diode die 1 has an electrical contact 5 on the side not facing the substrate 3. These can be electrically coupled to the outside of the pixel by a transparent cover electrode 11.

[0101] figure 22 This shows a further example of the device configuration. Three optoelectronic structural elements 1 are arranged in series. Each structural element is configured as a frustum in this configuration. As the height increases, its base surface decreases slightly. Thus, the side flanks of the optoelectronic structural elements are slightly chamfered.

[0102] The surface of the side flank of each photoelectronic structure element 1 is covered with a thin, transparent insulating layer 26. However, this does not extend to the upper second contact 5 and is therefore exposed. The inorganic insulating layer 26 may be fabricated, for example, by chemical vapor deposition. Alternatively, layer 26 may be made of SiN x SiO xThe layers may be made of ALD (Atomic Layer Deposition) materials such as Al2O3, TiO2, HfO2, TaO2, and ZrO2. These inorganic layers may be multilayer, specifically ALD-CVD-ALD, CVD-ALD, or ALD-CVD. The ALD layers may essentially consist of multilayer stacks (so-called nano-laminated structures). In this case, such an ALD nano-laminated structure consists of a multilayer stack of, for example, two different ALD layers and an ALD material, where, for example, the individual layers are typically only 3 nm to 10 nm thick and are specifically formed according to ABABA, etc.

[0103] Near the substrate 3, a mirror coating 7, which is also formed near the structural element 1, is applied to the electrical insulating layer 25. Openings 20 are formed in the insulating layer 26 on the left and right sides of the pixel, with sufficient space from the die. Therefore, the mirror coating layer 7 is exposed there. Finally, cover electrodes made of a conductive transparent material are applied to the top surface and side flanks. Since these extend over the openings in the insulating layer 26, they connect with the metallic layer 7 over a wide area. In this way, direct electrical contact between the cover electrodes 11 and the mirror coating 7 can be created.

[0104] figure 23 This is the figure. 22 The layout structure described above is shown in a plan view. 23 According to the description, the three subpixels or photoelectronic structural elements 1 are arranged such that their electrical contacts 5 do not face the substrate 3, but are electrically contactable by the transparent cover electrodes 11.

[0105] figure 15 This presents a configuration with additional structures. This arrangement structure is shown in Figure 14Since the configuration is similar to the previous one, we will omit a further explanation. However, unlike that configuration, here three identical photoelectronic structural elements B are applied to the substrate and electrically connected. The photoelectronic structural elements B are configured to emit blue wavelength light when in operation. A patterned insulating layer 30 is applied on the cover electrode 11. This improves the extraction of light from the photoelectronic structural elements. In this configuration, since identical photoelectronic structural elements are used, it is necessary to convert the light to other colors in order to obtain RGB pixels.

[0106] For this purpose, a conversion material is provided on top of layer 30 to convert light to the appropriate wavelength. In detail, this is the first conversion layer 31 located on top of the blue photoelectronic structure element on the left. A green conversion layer 32 is provided on top of the photoelectronic structure element located in the middle. Finally, a further transparent layer 33 is placed on top of the photoelectronic structure element on the right. This layer itself is not necessary, but the presence of the transparent layer creates a flat surface. The conversion material contains inorganic dyes or quantum dots. To reduce optical crosstalk, individual conversion layers, or conversion layer 32, are separated from the transparent layer by a thin reflective layer 34. Light from other structural elements may also enter the conversion layer more than that from structural elements located directly below, but this can be reduced by a low-profile design or by increasing the conductive track structure between structural elements. Furthermore, the extraction layer 30 may be patterned to extract more light incident on layer 30 at a steep angle, i.e., light incident substantially from below. Here, the pixels are located together in fairly close proximity. By slightly increasing the distance or using a non-series arrangement structure, the transformer and reflective layers 31-34 can be arranged so that they are uniformly distributed on the pixels. In this way, the outermost reflective layer 34 will also be located on the convex portion.

[0107] On top of the conversion structure are one or more further patterned layers 35, which (not shown here) also extend partially into the conversion structure. The converted light can be well coupled to the structure 35. The patterned layers 35 play a role in collimating and shaping the light, so that the converted or unconverted light exits substantially steeply, i.e., preferably perpendicular to the substrate surface. The patterned layers 35 may have, for example, a photonic structure that provides a virtual bandgap for light to propagate parallel to the surface. This causes the light to collimate.

[0108] By arranging some of the pixels shown here in rows and columns, a display or display array that can be individually driven and controlled can be formed. These arrangements can also be used to create pixelated lighting arrays for applications such as automobiles.

[0109] figure 24 This shows one configuration example of a proposed method for manufacturing a photoelectron arrangement structure. In the first step S1, a substrate having a number of contacts on its surface is prepared. The substrate may include further lead wires, drive control elements, or switching elements, as described above. In one embodiment, a protrusion is created on the substrate so as to surround the photoelectron structural elements to be subsequently mounted, thereby optically separating the arrangement structure from adjacent elements.

[0110] In step S2, one or more optoelectronic structural elements are mounted on the substrate and electrically connected to contacts on or within the substrate by their first contacts. The optoelectronic structural elements are configured in a vertical structure, meaning that the contacts of the optoelectronic structural elements face each other. The optoelectronic structural elements can be arranged in series, but other arrangements are also possible.

[0111] In step S3, a mirror coating layer is deposited on the substrate surface, which is electrically connected to the electrically controlled contacts on the substrate surface and at least partially covers the surface. Here, the mirror coating layer can be deposited at least partially, and in particular, on the side walls of protrusions or cavities facing the optoelectronic structural elements. Finally, in step S3, a transparent cover electrode is provided on the further contacts, which is in electrical contact with the mirror coating layer.

[0112] To avoid delamination of the cover electrode, step S2 or S3 further specifies that after the mirror coating layer is applied or the photoelectronic structure element is mounted, these are surrounded by an insulating layer. Since the height of this insulating layer corresponds to the height of the photoelectronic structure element, a flat surface is constructed. The insulating layer is fabricated by measures disclosed herein for fabricating a transparent nonconductive layer, such as spin-on-glass. A flat surface is created by removing the insulating layer material up to the upper contact between the photoelectronic structure element and the mirror coating layer. This step may involve mechanical or chemical methods. The cover electrode is then applied on top of the transparent insulating layer.

[0113] This contact can be made at the overlapping contact between the cover electrode surface and the mirror coating in the protruding region or at the edge of the cavity not facing at least one optoelectronic structural element. Alternatively, a connection can be made between the cover electrode and the mirror coating layer by providing a series of through-hole vias in the insulating layer and filling them with metal. The through-hole vias may also be trenches that expose the mirror coating layer.

[0114] In a further step, one or more patterned layers having a photonic crystal or quasicrystalline structure and configured to suppress or reduce light irradiated parallel to the substrate surface can be applied to the cover electrode. Alternatively, the cover electrode itself may be patterned to improve light extraction, collimate light, or direct the direction of radiation away from the substrate surface. Finally, a conversion material can be applied to the optoelectronic structure element.

[0115] The following embodiments relate to a different perspective than directly improving the directivity of emitted light. The following examples are intended for the fabrication of a Lambert radiator. However, it is obvious to those skilled in the art that reflector elements of other shapes affect beam shaping. Therefore, in special configurations, arrangement structures are fabricated that may have a back outlet and simultaneously possess directivity.

[0116] Figure 25 shows an example configuration in which the photoelectron arrangement structure 10 according to the present invention is equipped with a reflector element 18. First, a carrier substrate 12 is provided, and a large number of photoelectron structural elements 16 are often arranged side by side on the mounting surface 20 of this carrier substrate 12. Typically, a drive control electronic circuit 24 used to control each photoelectron structural element 16 is provided on the carrier substrate 12. For this purpose, a conductive connection part (not shown) may be provided between the drive control electronic circuit 24 and each photoelectron structural element 16. In other cases, as will be further shown below, the carrier substrate can be made transparent, or additional structures for new photoshaping can be added.

[0117] Here, the reflector element 18 is configured in a dome shape, and at least the photoelectronic structural element 16 surrounds the structural element 16 on the side that emits the light 14. For example, when the structural element 16 emits light 14 away from the carrier substrate 12, this light strikes the surface of the reflector element 18 facing the photoelectronic structural element 16, is reflected there, and is sent back toward the mounting surface 20 of the carrier substrate 12. The light propagates toward the display surface 22 of the carrier substrate 12 through the cross-section of the carrier substrate 12, sometimes refracting at the interface of the mounting surface 20, and is extracted there, sometimes undergoing repeated refraction or diffraction.

[0118] Advantageously, the reflector element 18 is preferably shaped and characterized in such a way that the light 14 is incident on the mounting surface 20 of the carrier substrate 12 at an incident angle 26 that is as perpendicular as possible to the carrier substrate plane 28. This is particularly important to minimize losses due to total internal reflection within the carrier substrate 12 and undesirable angles when the light is removed from the display surface 22 of the carrier substrate 12. This incident angle 26 is also preferably as small as possible to minimize crosstalk between adjacent pixel elements 10.

[0119] Figure 26 shows a further example of the arrangement structure 10 according to the present invention in the form of a pixel element, wherein a reflector element 18 is provided as a layer on or around the photoelectronic structure element 16. This modified configuration may be advantageous in that the reflector element 18 can be directly fabricated on the surface of the structure element 16, for example, as a metal layer. Various materials can be considered for the reflector element 18, including, for example, metallic materials, metal alloys or metal oxides, as well as other suitable compounds that can be procured using available manufacturing methods. Similar configurations are provided by directly forming the photoelectronic structure element from the same material as the carrier substrate. Furthermore, the reflector element may have a specific shape and configuration. However, the various embodiments of the aforementioned figures can be combined with the configurations shown in Figures 25-26, in particular, and with the configurations disclosed herein. For example, the reflector element 18 can be replaced with a configuration of a reflective circumferentially applied layer. Thus, the carrier substrate is applied to the cover electrode.

[0120] Furthermore, a passivation layer 32 is provided at the mesa edge 30 between the structural element 16 and the reflector element 18 layer. This passivation layer 32 has light-absorbing or at least light-blocking properties, so that the light 14 emitted by the optoelectronic structural element in the direction of the carrier substrate plane 28 or the mesa edge 30 is attenuated or absorbed. This prevents light 14 from entering adjacent elements 10 and causing crosstalk. In addition, the passivation layer 32 may be configured to shape the beam of the emitted light 14.

[0121] Figure 27 shows a pixel element according to the present invention, which has a light-absorbing coating 34 on the display surface 20 and the mounting surface 22 of the carrier substrate 12. This example configuration has a spherical reflector element 18 surrounding the optoelectronic structure element 16 located on the mounting surface 20 of the carrier substrate 12. In this embodiment, the carrier substrate 12 is configured to be transparent or at least partially transparent so that light 14 can propagate within the carrier substrate 12.

[0122] In this configuration example, a light-absorbing layer 34 is provided to improve the dark appearance and contrast of the display. This light-absorbing layer 34 is applied to the mounting surface 20 and / or the display surface 22 outside the reflector element 18 on the carrier substrate 12. On the one hand, this prevents light 14 from being extracted outside the desired active region of the pixel element. On the other hand, a beneficial effect is that light 14 propagating within the carrier substrate 12 is absorbed or attenuated without being extracted outside the desired region of the display surface 22. To the viewer, these light-absorbing layers 34 can be clearly identified as inactive, black, or dark, and the improved optical boundary compared to the active light-emitting region improves the contrast characteristics of the display.

[0123] Figure 28 shows a simplified further configuration modification of the arrangement structure 10 according to the present invention. In its basic structure, the arrangement structure 10 corresponds to the example already shown in Figures 25 to 27. Here, a photoelectronic structure element 16 surrounded by a reflector element 18 is provided on the carrier substrate 12. Due to the reflection of light 14 by the reflector element 18, the light 14 propagates through the carrier substrate 12 and reaches the display surface 22 of the carrier substrate 12.

[0124] In this case, it is desirable that as large a proportion as possible of the light 14 that has passed through the carrier substrate 12 is extracted from the carrier substrate 12 via the display surface 22. In this case, the roughened surface 36 can improve the extraction of light 14. More generally, the surface of the display surface 22 has patterned areas with additional microstructures that are angled relative to each other, and these microstructures can provide additional extraction by having an angle different from that parallel to the carrier substrate plane 28.

[0125] Figure 29 shows the arrangement structure 10 according to the present invention, in which a color filter element 38 is provided on the display surface of a carrier substrate 12 and a light-absorbing coating 34 is applied. This configuration is suitable, for example, for generating white or other colored light in automotive lighting fixtures.

[0126] The basic structure of the arrangement structure 10 is almost the same as in the previous figures, and here as well, the light absorption layer 34 is provided on both the mounting surface 20 and the display surface 22 of the carrier substrate 12 outside the region of the reflector element 18. Furthermore, a color filter element 38 is provided here, and is positioned on the display surface 22 of the carrier substrate 12 opposite the reflector element 18.

[0127] For example, a red photoelectronic structural element may be provided with a corresponding red color filter element 38. The same applies to using a green structural element with a green color filter element 38, and, for example, a blue LED with a blue color filter element 38, together with their respective associated emitter chips 16. Lower reflectivity and an improved black appearance can be seen as advantages here. Here again, the light absorption layer 34 has an absorption effect on undesirable light components 14 propagating within the carrier substrate 12.

[0128] In an alternative configuration, referring again to Figure 29, element 38 may be a color conversion element that converts light of a first wavelength to a second wavelength. The light emitted by the photoelectronic structure element 16 and reflected by the reflector element 18 is incident on the conversion element and converted there. In this way, each primary color, and even white light, can be produced by structures using different conversion dyes.

[0129] figure 30This shows a further configuration example of an array 10 in which two adjacent arrangement structures 10 are arranged on a carrier substrate. Between the two pixel elements 10, a light-absorbing layer 34 is provided on each of the different surfaces of the carrier substrate. This may be provided in particular to minimize crosstalk. Depending on the arrangement and structure of the structure elements 16, a space may be created between the structure elements 16 and the surrounding reflector elements 18, which can serve as an aperture or aperture edge. This means that light 14 can exit this aperture at a small angle with respect to the carrier substrate plane 28, pass diagonally through the carrier substrate 12, and head toward the adjacent pixel elements 10.

[0130] To prevent this crosstalk, a light-absorbing layer 34 is provided between two arrangement structures 10 or between two adjacent reflector elements 18. These may be placed not only on the mounting surface 20 of the carrier substrate 12 but also on the display surface 22 of the carrier substrate 12. These light-absorbing layers 34 can attenuate or remove undesirable light components 14, thereby improving the contrast of the display.

[0131] figure 31 Next, an embodiment of the drive control electronic circuit 24 of the arrangement structure in the form of a pixel element 10 according to the present invention is referred to. This is configured as part of a carrier substrate, for example, a transistor structure is provided as part of the carrier substrate. In one embodiment, a substrate 12 is provided as the carrier substrate. ru. When the drive control electronic circuit 24 is based on IGZO, according to one embodiment, the drive control electronic circuit 24 can be placed within the internal region of the reflector element 18 (not shown here). This possibility is based in particular on the at least partial light transmittance of the IGZO material. In a further example, LTPS is used as the base for the drive control electronic circuit 24 and as the material for the carrier substrate 12. LTPS stands for Low Temperature Poly Silicon, which has relatively high light absorption characteristics but can have better electrical characteristics than IGZO.

[0132] Various materials can be considered for the substrate 12, such as amorphous silicon, as well as IGZO or LTPS. IGZO is an abbreviation for indium gallium zinc oxide, which has the property of being partially transparent to light and can be manufactured relatively inexpensively.

[0133] LTPS can be used for both p-type and n-type transistors, whereas IGZO is only suitable for p-type transistors. The arrangement structure of the LTPS-based drive control electronic circuit 24 will consequently be provided outside the reflector element 18. A further option is to consider the use of so-called ICs, which are often used with silicon-based substrates and generally have light absorption properties.

[0134] However, the reflector structure may also be part of the substrate (not shown here), in which case the substrate will include drive control elements. In this regard, in that case the structural element 16 is embedded in the cavity, and its sidewalls will form the reflector element 18.

[0135] In one embodiment, the drive control element is positioned outside, or at least outside, the area of ​​the reflector element 18 on the reflector 18, and above or above the side portion 20 as viewed from the substrate 12. Contact of the emitter chip 16 can be achieved not only by a metal contact pad on the carrier substrate 12, for example, but also by transparent ITO (indium tin oxide).

[0136] figure 32This shows a configuration structure 10 according to the present invention, in which a diffuser layer 40 is partially coated on a reflector element 18. The features of the configuration structure 10 shown in this example can be seen in the special configuration of the reflector element 18. In this regard, a diffuser layer 40 is provided on the inner surface of the reflector element 18 in the lateral direction (specifically, region 18B in this case). The purpose of this diffuser layer 40 is to increase the deflection of the emitted light 14 and to further strengthen the deflection of the light 14 toward the carrier substrate 12. In this case, it may be advantageous to provide a thinner diffuser layer 40 in the region 18A of the reflector directly above the emitter chip in the vertical direction, or to not provide a diffuser layer 40 at all.

[0137] In particular, the diffuser layer 40 in this region 18A may be flat or planar in order to reflect back the light emitted laterally to the carrier substrate plane 28 as directly as possible and focus it toward the mounting surface 20 of the carrier substrate 12 in an almost vertical direction. In this case, compared to conventional LED technology, the optoelectronic structure element has characteristics and structure that are close to the Lambert radiation pattern, so a relatively thin diffuser layer 40 may be sufficient. Materials that can be used for this purpose include, for example, Al2O3 or TiO2.

[0138] figure 33 Further configurations in the form of pixel cells are shown in cross-sectional and plan views. Each pixel cell contains three individual photoelectronic structural elements 16r, 16g, and 16b. These are configured to emit red, green, and blue primary colors, respectively, when in operation. In this example configuration, the three photoelectronic structural elements are arranged at the corners of a right triangle. However, other arrangements are possible, such as arranging them in a row. Each structural element is formed as a vertical LED, i.e., a common contact is located on the LED side that does not face the carrier substrate. The photoelectronic structural elements can be individually driven and controlled. It is Noh. Similarly, for example, as individual display modules or lighting fixture modules with or without redundancy. no structureThis is also a possibility. In the diagram on the right, a common transparent cover contact 17 is provided for this purpose, which completely or at least partially covers the photoelectron structure element and thereby makes electrical contact. The side walls of the photoelectron structure element are insulated and are not connected to the cover electrode 17. Furthermore, a reflector element 18 is provided to surround each of the three photoelectron structure elements, forming the entire pixel.

[0139] The light emitted in the direction of the reflector element is reflected by the carrier substrate and strikes the photonic structure 19, which is partially introduced into the carrier substrate. The photonic structure 19 is configured to change the direction of the emitted light and emit it as a collimated beam. In addition to the structure 19 shown here, a lens can also be provided in this region of the carrier structure.

[0140] Depending on the application, the photonic structure can be omitted. In automotive applications, a Lambert radiation pattern may be preferable, in which case this structure is omitted. In the field of augmented reality, strong directionality may be required, which can be achieved by adding the photonic structure. In addition to the photonic structure, a conversion material may be provided together with the structure or in place of the structure. In the automotive field, applications of directional light using white or other colored light are possible.

[0141] Finally, Figure 34 This illustrates a method 100 for manufacturing a placement structure 10. In this method, one or more optoelectronic structural elements are first mounted on the mounting surface of a flat carrier substrate 110. A corresponding transfer is performed prior to this mounting. The configuration relating thereto is disclosed herein.

[0142] Subsequently, in step 120, a reflector element is fabricated, for example, as a reflective layer for a photoelectronic structure element. In one embodiment, before step 110, the display surface 22 of the carrier substrate 12 is processed to create a rough surface 36 or a rough fine patterned area on the surface of the display surface 22.

[0143] In the following, various devices and arrangement structures, as well as methods for manufacturing, processing, and operating them, are described again as illustrative subjects. The following subjects present various aspects and configurations of the proposed principles and concepts, which can be combined in various ways. Such combinations are not limited to those shown below.

[0144] 1. A method for fabricating at least one photoelectron arrangement structure, comprising the following steps: - A step of creating a first contact area and a second contact area on the surface of substrate 1, - A step of preparing a vertical photoelectronic structural element and connecting the first contact of the structural element to the first contact region, - A step of fabricating a reflector structure on the substrate that separates and surrounds the above-mentioned photoelectronic structural elements, - A step of fabricating a first metal mirror layer, wherein the first metal mirror layer is fabricated such that it electrically connects a contact layer attached to the second contact of the photoelectronic structural element with the second contact region, - A step of fabricating a second metal mirror layer facing the above-mentioned photoelectronic structural element on the reflector structure surrounding it. A method having

[0145] 2. Furthermore, The steps include: applying a planarization layer to form the above-mentioned reflector structure; The optional step of removing the planarization layer on the second contact region to make the second contact region accessible to the first metal mirror layer. The method described in Subject 1, including the method described in Subject 1.

[0146] 3. The step of patterning the planarization layer to form the reflector structure that surrounds the photoelectronic structural element in a manner that is in mechanical contact with it, The step of additionally applying the electrically connected first metal mirror layer to the reflector structure, particularly in a state where it is electrically conductive with the second metal mirror layer, The method described in Subject 2, including the method described in Subject 2.

[0147] 4. The method described in Subject 3, wherein the enclosing portion surrounds the light-emitting element, particularly at a distance greater than twice the edge length of the above-mentioned photoelectronic structural element.

[0148] 5. The step of applying the second metal mirror layer to the main surface of the reflector structure that is not facing the substrate. The method described in Subject 3, including the method described in Subject 3.

[0149] 6. The method according to any one of Subjects 1 to 5, characterized in that the second metal mirror layer is applied to the flank portion of the reflector structure.

[0150] 7. The method described in Subject 6, wherein the light extraction is adjusted by the inclination angle of the flank portion of the reflector structure.

[0151] 8. A step of manufacturing the flank portion of the reflector structure such that the circumference of the reflector structure increases as the distance from the substrate increases, or The step of fabricating the flank portion of the reflector structure such that the circumference of the reflector structure decreases as the distance from the substrate increases. The method described in Subject 7, including the method described in Subject 7.

[0152] 9. The method according to any one of Subjects 1 to 8, further comprising the step of providing a black layer, in particular a potting layer, on the substrate between the flanks of the reflector structure, in particular up to the height of the flanks.

[0153] 10. Furthermore, - A coating is applied to the substrate or the black layer, particularly up to a height above the first metal mirror layer, for sealing, encapsulation, and / or optical extraction, and optionally patterned. A method of describing one of the subjects 1 through 9, including [the specified subject].

[0154] 11. A method of describing one of the subjects 1 through 10, in which the above layers are patterned in the middle by photolithography.

[0155] 12. A photoelectron arrangement structure, - A substrate having a first contact region and a second contact region, - A photoelectronic structure element comprising at least one vertical photoelectronic structure element wherein a first contact of the vertical photoelectronic structure element is connected to the first contact region on one side of the substrate, and a first contact of the vertical photoelectronic structure element not facing the substrate is connected to the second contact region by a transparent contact layer and a first metallic mirror layer, - A reflector structure surrounding the above-mentioned vertical photoelectronic structural element, wherein a second metal mirror layer is attached to the reflector structure, and A photoelectron arrangement structure including this.

[0156] 13. The photoelectron arrangement structure according to Subject 12, wherein the reflector structure surrounds the vertical photoelectron structure element in a manner that is mechanically in contact with it along the XY plane, and in particular the first metal mirror layer is electrically conductive with the second metal mirror layer.

[0157] 14. The photoelectron arrangement structure according to subject 12 or 13, characterized in that it has an enclosure portion that surrounds the vertical photoelectron structure element in a manner that is in mechanical contact with it, the reflector structure surrounds the enclosure portion at an interval of 1 to 10 times, particularly more than 3 times, the edge length of the vertical photoelectron structure element, and the first metal mirror layer and the contact layer are further provided in the enclosure portion.

[0158] 15. A photoelectron arrangement structure according to any one of subjects 12 to 14, wherein three photoelectron structural elements each form a subpixel of a single pixel.

[0159] 16. The photoelectron arrangement structure according to any one of Subjects 12 to 15, wherein the transparent contact layer is a transparent cover electrode that extends beyond the vertical photoelectron structure element to the upper side of the reflector structure.

[0160] 17. The photoelectron arrangement structure according to any one of Subjects 12 to 16, further comprising a conversion material at least partially disposed on the vertical photoelectron structure element described above.

[0161] 18. A photo-shaping structure having a first region and a second region of different refractive indices, further comprising a microlens or photonic structure, - Applied to the transparent contact layer mentioned above, or - Displaced between the above transparent contact layer and the optoelectronic structural element, or - An optoelectronic arrangement structure according to any one of Subjects 12 to 17, wherein one of the first and second regions described above extends at least partially into the semiconductor material of the vertical optoelectronic structure element, is formed by the vertical optoelectronic structure element, or is formed by the conversion material.

[0162] 19. An optoelectronic arrangement structure according to any one of subjects 12 to 18, wherein a cavity is formed by a reflector structure surrounding the above, the vertical optoelectronic structure element is arranged within the cavity, and the remaining space within the cavity is filled with a conversion material, in particular quantum dots.

[0163] 20. A photoelectron arrangement structure in which the region between the reflector structure surrounding the above and the vertical photoelectron structure element is at least partially covered with a reflective layer.

[0164] 21. A photoelectron arrangement structure in which the above-mentioned photoelectron structure element has a lower height than the surrounding structure.

[0165] 22. A device comprising a plurality of photoelectron arrangement structures described in any one of Subjects 12 to 21, or a plurality of photoelectron arrangement structures manufactured according to a method described in any one of Subjects 1 to 11, and arranged in rows and columns to form pixels, wherein each of the plurality of pixels is surrounded by the reflector structure, the side walls of the reflector structure are chamfered and comprise a metal mirror layer.

[0166] 23. A pixel comprising a photoelectron arrangement structure according to any one of subjects 12 to 21, comprising three vertically configured photoelectron structure elements arranged on a carrier substrate and surrounded by a reflector structure.

[0167] 24. Use of photoelectron arrangement structures described in any one of Subjects 12 to 20 in video walls or lighting fixtures, particularly automotive lighting fixtures.

[0168] 25. A photoelectron arrangement structure comprising a substrate and at least one photoelectron structural element fixed to one side of the substrate, - The side facing the substrate has a first electrical contact, - On the side not facing the substrate, there is a second electrical contact electrically connected to the electrical control contact on the surface of the substrate by a mirror coating. - A photoelectron arrangement structure in which the above mirror coating at least partially covers the substrate surface facing the above at least one structural element.

[0169] 26. Furthermore, The photoelectron arrangement structure according to Subject 25, comprising a transparent cover electrode extending to cover the second electrical contact and connected to the electrical contact by the mirror coating, wherein the mirror coating is at least partially located beneath the cover electrode and spaced apart from the cover electrode.

[0170] 27. The photoelectron arrangement structure according to subject 25 or 26, wherein the control contact is not located beneath the cover electrode and the mirror coating does not extend beneath the cover electrode in at least one region.

[0171] 28. A photoelectron arrangement structure according to any one of Subjects 25 to 27, wherein the mirror coating has a metallic mirror comprising, in particular, at least one of the following metals: Al, Ag, AgPdCu, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, Zn, and combinations thereof.

[0172] 29. The above cover electrode is made of a conductive oxide layer, particularly IGZO, metal oxide, zinc oxide, tin oxide, cadmium oxide, indium-doped tin oxide (ITO), aluminum-doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O 12 A photoelectron arrangement structure according to any one of Subjects 25 to 28, having a material consisting of a mixture of different transparent conductive oxides.

[0173] 30. The photoelectron arrangement structure according to any one of Subjects 25 to 29, wherein the substrate has an outer edge that at least partially surrounds the at least one photoelectron structure element, the mirror coating is disposed on the upper side of the outer edge, and the mirror coating is electrically connected at that location to the cover electrode surface.

[0174] 31. The photoelectron arrangement structure according to any one of Subjects 25 to 30, wherein the substrate has a cavity in which the at least one photoelectron structure element is disposed, and the cavity has a depth substantially corresponding to the height of the at least one photoelectron structure element.

[0175] 32. A photoelectron arrangement structure according to any one of Subjects 25 to 31, wherein an insulating planar insulating layer is provided around the at least one photoelectron structure element, the insulating layer having a height substantially less than or equal to the height of the photoelectron structure element.

[0176] 33. The photoelectron arrangement structure according to any one of Subjects 25 to 32, wherein the insulating planar insulating layer extends at least partially on the substrate between the cover electrode layer and the mirror coating layer, particularly between the photoelectron structure element and the surrounding outer edge.

[0177] 34. The photoelectron arrangement structure according to any one of Subjects 239 to 252, wherein the mirror coating extends at least partially to the side surface of the outer edge facing the photoelectron structure element, and the side surface extends at a chamfered angle with respect to the surface of the substrate in particular.

[0178] 35. The photoelectron arrangement structure according to any one of Subjects 25 to 34, wherein the direct electrical contact between the cover electrode and the mirror coating is provided by through-hole vias or vias of the mirror coating material via the insulating layer.

[0179] 36. The photoelectron arrangement structure according to any one of Subjects 25 to 35, wherein the insulating layer is chamfered in at least one region so as to be spaced apart from the photoelectron structure element, and the cover electrode extends in that region toward the direction of the mirror coating.

[0180] 37. The photoelectron arrangement structure according to Subject 36, wherein the flank portion of the chamfered region has a flat lead angle.

[0181] 38. The photoelectron arrangement structure according to any one of Subjects 25 to 37, wherein the first contact of the photoelectron structure element is directly connected to a contact on the surface of the substrate.

[0182] 39. A pixel comprising a photoelectron arrangement structure according to any one of Subjects 25 to 38, wherein photoelectron structural elements that provide red light, green light, and blue light, respectively, are fixed on a substrate, and a second electrical contact of the photoelectron arrangement structure is bonded to a conductive mirror coating layer via a transparent conductive cover electrode.

[0183] 40. The pixel according to Subject 39, wherein the above-mentioned photoelectronic structural elements are surrounded by a common outer edge or are located within a common cavity.

[0184] 41. The region on the substrate between the above-mentioned optoelectronic structural elements is at least partially covered with a reflective layer, particularly the mirror coating layer. Pixel as described in Subject 39 or 40.

[0185] 42. A pixel according to any one of Subjects 39 to 41, wherein the above-mentioned photoelectronic structural element is embedded in a transparent and non-conductive material.

[0186] 43. A pixel according to any one of Subjects 39 to 42, wherein the substrate has lead wires configured to individually and independently drive and control each of the photoelectronic structural elements.

[0187] 44. The pixel according to any one of Subjects 39 to 43, wherein the substrate has a TFT structure and electrical lead wires for supplying current individually to each optoelectronic structural element.

[0188] 45. A pixel according to any one of Subjects 39 to 44, further comprising a photo-shaped patterning layer on or inside the transparent cover electrode, wherein the photo-shaped patterning layer has a lenticular element, photonic crystal or quasicrystalline structure and is configured to suppress or reduce light radiated parallel to the surface of the substrate.

[0189] 46. ​​A pixel according to any one of subjects 39 to 45, wherein the transparent cover electrode is patterned in particular to collimate light and cause it to radiate away from the substrate surface, or to extract light.

[0190] 47. A pixel according to any one of Subjects 39 to 46, wherein a conversion material for converting light is disposed on and / or around at least one of the photoelectronic structural elements, and the conversion material may be electrically insulated from the transparent cover electrode, in particular by an insulating layer.

[0191] 48. A display or display module having a plurality of pixels according to any one of Subjects 39 to 47, arranged in rows and columns so as to be individually driveable and controllable, wherein, in particular, the pixels arranged in a row have a common cover layer and common electrical control contacts.

[0192] 49. The display or display module according to Subject 48, wherein the pixels are separated from each other by protrusions arranged on the substrate.

[0193] 50. The display or display module according to subject 48 or 49, wherein the substrate has a plurality of cavities that are separated from each other, and one of the plurality of pixels is located in one of the cavities.

[0194] 51. A display or display module described in any one of Subjects 48 to 50, wherein conversion material for converting light, in particular quantum dots, is introduced into at least some of the cavities.

[0195] 52. The display or display module according to Subject 50, wherein the side walls of the protrusions or the side walls between the cavities have a reflective layer, particularly a mirror coating layer.

[0196] 53. A display or display module according to any one of subjects 48 to 52, wherein the substrate has a conductive structure according to any one of the subjects described above or below, which is configured to individually address and drive control pixels.

[0197] 54. Lighting fixtures, particularly in automobiles, having multiple photoelectron arrangement structures or pixels as described in any one of the preceding subjects.

[0198] 55. A method for manufacturing a photoelectron arrangement structure, comprising the following steps: - A step of preparing a substrate having a large number of contacts on its surface, - A step of attaching at least one, particularly vertical, photoelectronic structural element to one of the contacts, wherein the photoelectronic structural element has further contacts on the side not facing the substrate surface, - A step of preparing a mirror coating layer on the substrate surface that is electrically connected to the electrical control contacts on the substrate surface and covers the surface at least partially, The steps include forming a transparent cover electrode on the further contact that electrically contacts the mirror coating layer, and Methods that include...

[0199] 56. The method according to Subject 55, wherein the substrate has a protrusion that at least partially surrounds at least one optoelectronic structural element.

[0200] 57. The method according to Subject 55 or 56, wherein the mirror coating layer is applied at least partially, particularly to the sidewall of the protrusion or cavity facing at least one of the optoelectronic structural elements.

[0201] 58. Furthermore, - A step of providing a transparent insulating layer on the surface of the substrate so as to surround at least one photoelectronic structural element, wherein the cover electrode is provided on the transparent insulating layer. A method of describing any one of subjects 55 to 57, including the above.

[0202] 59. In addition, at least one of the following steps: - A step of forming a contact where the cover electrode surface and the mirror coating surface overlap at the end of the cavity that does not face the region of the convex portion or the at least one photoelectronic structural element; or - A step of forming through-hole vias that penetrate a transparent insulating layer and filling the through-hole vias so that the cover electrode above contacts the mirror coating layer; or - A step of providing a conductive connection portion on the chamfered side of the transparent insulating layer to bring the transparent cover electrode and the mirror coating layer into contact. A method of describing any one of subjects 55 to 58, including the above.

[0203] 60. Furthermore, - The step of mirror coating a portion of the substrate surface between the photoelectronic structural elements, in particular the step of applying the mirror coating layer to the substrate surface between the photoelectronic structural elements. A method of describing any one of subjects 55 to 59, including the above.

[0204] 61. Furthermore, A step of forming a patterning layer on the transparent cover electrode, wherein the patterning layer has a photonic crystal or quasicrystalline structure and is configured to suppress or reduce light radiated parallel to the surface of the substrate. A method of describing any one of the subjects from 55 to 60, including the above.

[0205] 62. Furthermore, The transparent cover electrode described above is patterned to collimate light and cause it to radiate away from the substrate surface, or to extract light. A method of describing any one of subjects 55 to 61, including the above.

[0206] 63. Furthermore, A step of applying a conversion material for converting light onto at least one of the above-mentioned photoelectronic structural elements, wherein the conversion material is electrically insulated from the transparent cover electrode, in particular by an insulating layer. A method of describing any one of subjects 55 to 62, including the above.

[0207] 64. A photoelectronic structure element, - p-type doped layer, - n-type doped layer, - Active region located between the p-type doped layer and the n-type doped layer A layered stack consisting of, The above layer stack extends beyond the main surface, the active region is located above the center of the layer stack as viewed from the main surface, and the layer stack has a diameter that decreases from the main surface. A reflective layer covering the surface of the above layer stack and A photoelectronic structure element that includes this.

[0208] 65. The optoelectronic structure element according to Subject 64, wherein the layer stack has a hemispherical, parabolic, or elliptical shape.

[0209] 66. The optoelectronic structure element according to subject 64 or 65, wherein the region of the active layer adjacent to the reflective layer has an increased band gap.

[0210] 67. A photoelectronic structure element according to any one of subjects 64 to 66, wherein the region of the active layer adjacent to the reflective layer has quantum well intermixing.

[0211] 68. The optoelectronic structure element according to any one of the topics 64 to 67, wherein the reflective layer has a dielectric between the active region and the layer of the layer stack adjacent to the surface region.

[0212] 69. Photoelectron arrangement structure, - A flat carrier substrate, - At least one photoelectronic structure element disposed on the mounting surface of the carrier substrate, in particular the photoelectronic structure element described in any one of Subjects 64 to 68, The above-described photoelectronic structure element is configured such that light is emitted across the carrier substrate plane and away from the carrier substrate, and the photoelectronic structure element is configured such that light is emitted in a direction away from the carrier substrate. - A flat reflector element, The reflector element is spatially arranged and configured on the mounting surface with respect to the at least one photoelectronic structure element so as to reflect the light emitted by the at least one photoelectronic structure element toward the carrier substrate. It has, The above-mentioned carrier substrate is configured to be at least partially transparent so that light reflected from the reflector element propagates through the carrier substrate and is emitted onto the display surface of the carrier substrate on the side opposite to the mounting surface, in a photoelectron arrangement structure.

[0213] 70. The photoelectron arrangement structure according to Subject 69, wherein a diffuser layer is provided on the side of the reflector element facing the at least one photoelectron structure element, and / or the reflector material has diffuser particles, in order to scatter light reflected from the at least one photoelectron structure element.

[0214] 71. The photoelectron arrangement structure according to Subject 70, wherein the diffuser layer and / or the diffuser particles have Al2O3 and / or TiO2.

[0215] 72. The photoelectron arrangement structure according to any one of Subjects 69 to 71, wherein the reflector element surrounds the at least one photoelectron structure element in a circular, polygonal, or parabolic shape.

[0216] 73. The photoelectron arrangement structure according to any one of Subjects 69 to 72, wherein the reflector element forms an electrical contact of the at least one photoelectron structure element.

[0217] 74. The photoelectron arrangement structure according to any one of Subjects 69 to 73, wherein the reflector element is configured and formed so that at least 90% of the light emitted by the at least one photoelectron structure element is incident on the mounting surface of the carrier substrate at an angle of 45° to 90° with respect to the plane of the carrier substrate.

[0218] 75. A photoelectron arrangement structure according to any one of Subjects 69 to 74, wherein the above-mentioned photoelectron structure element comprises three structural elements surrounded by a reflector element.

[0219] 76. The photoelectron arrangement structure according to Subject 63, wherein at least three of the structural elements have a contact region on the side facing the reflector element that is covered with a transparent cover layer for common electrical contact.

[0220] 77. The optoelectronic arrangement structure according to any one of Subjects 69 to 76, wherein the carrier substrate is polyamide, transparent plastic, resin, or glass.

[0221] 78. The photoelectron arrangement structure according to any one of Subjects 69 to 77, wherein the reflector element is formed as a reflective layer of the at least one photoelectron structure element.

[0222] 79. The photoelectron arrangement structure according to any one of Subjects 69 to 78, wherein a passivation layer is additionally provided to attenuate or eliminate light reflection at the mesa edge of the above-mentioned photoelectron structure element.

[0223] 80. The photoelectron arrangement structure according to any one of Subjects 69 to 79, wherein a light-absorbing coating is provided on the mounting surface and / or display surface of the carrier substrate on the outside of the reflector element.

[0224] 81. The photoelectron arrangement structure according to any one of Subjects 69 to 80, wherein the display surface of the carrier substrate has an uneven and / or roughened structure.

[0225] 82. A color filter element is arranged on the display surface of the carrier substrate so as to face the reflector element. The above-mentioned color filter element allows the primary color spectrum of at least one of the above-mentioned photoelectron structure elements to pass through and attenuates different color spectra, according to any one of Subjects 69 to 81.

[0226] 83. An optoelectronic arrangement structure according to any one of subjects 69 to 82, wherein an optoelectronic arrangement structure having the characteristics described in any one of the following subjects is introduced into the carrier substrate, and the structure has a first region and a second region with different refractive indices.

[0227] 84. An optoelectronic arrangement structure according to any one of Subjects 69 to 83, wherein an optical shaping structure and / or an optical conversion structure are disposed on the display surface of the carrier substrate, and the structure has a first region and a second region.

[0228] 85. A photoelectron arrangement structure according to subject 83 or 84, wherein the first region comprises a conversion material.

[0229] 86. A photoelectron arrangement structure according to any one of Subjects 69 to 85, comprising a conversion material surrounding at least one of the above-mentioned photoelectron structural elements and filling the space between the photoelectron structural element and the reflector material.

[0230] 87. An optoelectronic arrangement structure according to any one of Subjects 69 to 86, wherein the conversion material is included on the display surface of the carrier substrate.

[0231] 88. Display arrangement structures, particularly video walls, each having multiple optoelectronic arrangement structures described in any one of the preceding subjects.

[0232] 89. Automotive lighting fixture comprising a photoelectron arrangement structure described in any one of the preceding subjects.

[0233] 89. A method for manufacturing an optical pixel element, comprising the following steps: - The step of mounting at least one optoelectronic structure element on the mounting surface of a flat carrier substrate, - A step of fabricating a reflector element, The reflector element is formed as a light-reflecting layer on the at least one photoelectronic structure element such that the light emitted by the at least one photoelectronic structure element is reflected toward the carrier substrate. A method having

[0234] The use of illustrative configurations in the description does not limit the various configurations shown to those configurations. Rather, this disclosure shows several configurations that can be combined with each other. For example, a configuration related to a process can be combined with a configuration focused on light extraction. This is evident from the various subjects shown above.

[0235] Accordingly, the present invention includes any features and any combination of features, and in particular any combination of features in the subject matter and claims, even if such features or combinations are not explicitly specified in the exemplary configurations.

Claims

1. A pixel comprising a photoelectron arrangement structure, The photoelectron arrangement structure comprises a substrate and at least one photoelectron structural element fixed to one side of the substrate. The side of the at least one photoelectronic structural element facing the substrate has a first electrical contact, The side of the at least one photoelectronic structural element not facing the substrate has a second electrical contact electrically connected to an electrical control contact on the surface of the substrate by a mirror coating. The mirror coating in a pixel at least partially covers the surface of the substrate facing the at least one photoelectronic structural element. The present invention further includes a transparent cover electrode that extends to cover the second electrical contact and is connected to the second electrical contact by the mirror coating, wherein the mirror coating is at least partially located beneath the cover electrode and spaced apart from the cover electrode. The electrical control contact is not located beneath the cover electrode, and the mirror coating does not extend beneath the cover electrode in at least one region. Photoelectronic structural elements that provide red light, green light, and blue light, respectively, are fixed on the substrate, and the second electrical contact of the photoelectronic arrangement structure is bonded to a conductive mirror coating layer via a transparent conductive cover electrode. The photoelectronic structural elements are surrounded by a common outer edge or are located within a common cavity. Pixel.

2. The pixel according to claim 1, wherein the mirror coating has a metal mirror.

3. The pixel according to claim 1, wherein the cover electrode has a conductive oxide layer.

4. The pixel according to claim 1, wherein the substrate has an outer edge that at least partially surrounds the at least one photoelectronic structural element, the mirror coating is disposed on the upper side of the outer edge, and the mirror coating is electrically connected at that location to the surface of the cover electrode.

5. The pixel according to claim 1, wherein the substrate has a cavity in which the at least one photoelectronic structural element is disposed, and the cavity has a depth corresponding to the height of the at least one photoelectronic structural element.

6. The pixel according to claim 1, wherein an insulating planar insulating layer having a height less than or equal to the height of the photoelectron structure element is provided around the at least one photoelectron structure element.

7. The pixel according to claim 6, wherein the insulating planar insulating layer extends at least partially between the cover electrode layer and the mirror coating layer.

8. The pixel according to claim 4, wherein the mirror coating extends at least partially to the side surface of the outer edge facing the photoelectronic structural element.

9. The pixel according to claim 6 or 7, wherein direct electrical contact between the cover electrode and the mirror coating is provided by through-hole vias or vias of the mirror coating material via the planar insulating layer.

10. The pixel according to claim 6 or 7, wherein the planar insulating layer is chamfered in at least one region so as to be spaced apart from the photoelectronic structural element, and the cover electrode extends in the direction of the mirror coating at that location.

11. The pixel according to claim 10, wherein the flank portion of the chamfered region has a flat lead angle.

12. The pixel according to claim 1, wherein the first electrical contact of the photoelectronic structural element is directly connected to a contact on the surface of the substrate.

13. The pixel according to claim 1, wherein the region on the substrate between the photoelectronic structural elements is at least partially covered with a reflective layer.

14. The pixel according to claim 1, wherein the photoelectronic structural element is embedded in a transparent and non-conductive material.

15. The pixel according to claim 1, wherein the substrate has lead wires configured to individually and independently drive and control each of the photoelectronic structural elements.

16. The pixel according to claim 1, wherein the substrate has a TFT structure and electrical lead wires for individually supplying current to each optoelectronic structural element.

17. The pixel according to claim 1, further comprising a photo-shaping patterning layer on or inside the transparent cover electrode, wherein the photo-shaping patterning layer has a lenticular element, a photonic crystal, or a quasicrystalline structure, and is configured to suppress or reduce light radiated parallel to the surface of the substrate.

18. The pixel according to claim 1, wherein the transparent cover electrode is patterned to collimate light and cause it to radiate away from the surface of the substrate, or to extract light.

19. The pixel according to claim 1, wherein a conversion material for converting light is disposed on and / or around at least one of the photoelectronic structural elements.

20. A display or display module having a plurality of pixels according to claim 1, arranged in rows and columns that can be individually driven and controlled.

21. The display or display module according to claim 20, wherein the pixels are separated from each other by protrusions arranged on the substrate.

22. The display or display module according to claim 21, wherein the substrate has a plurality of cavities that are separated from each other, and one of the plurality of pixels is disposed in one of the cavities.

23. The display or display module according to claim 22, wherein at least some of the cavities are provided with a conversion material for converting light.

24. The display or display module according to claim 22, wherein the side wall of the protrusion or the side wall between the cavities has a reflective layer.

25. The display or display module according to claim 20, wherein the substrate has a conductive structure configured to individually address and drive-control pixels.

Images