Chambers for batch cooling or heating, and related methods and structures

Abstract

The present disclosure relates to a chamber for batch cooling or heating and related methods and structures. In one embodiment, a chamber usable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, lid, and one or more sidewalls at least partially define an interior space. The chamber includes a cassette disposed within the interior space. The cassette includes a first outer plate, a second outer plate spaced from the first outer plate, and a plurality of steps between the first outer plate and the second outer plate. The steps include a plurality of spaced-apart substrate supports between the first outer plate and the second outer plate. The chamber includes one or more baffles disposed outwardly from the cassette.

Description

Technical Field

[0001] The present disclosure relates to chambers for batch cooling or heating and related methods and structures related to semiconductor manufacturing.

[0002] In one or more embodiments, the chamber is used to batch heat or cool a plurality of substrates before (e.g., pre-treatment) or after (e.g., post-treatment) a processing operation (epitaxial deposition process) for semiconductor applications.

Background Art

[0003] Semiconductor substrates are processed for a wide variety of applications including the manufacture of integrated devices and micro-devices. Before or after a processing operation (such as an epitaxial deposition process), the substrate can be heated or cooled. Heating and cooling of the substrate can be difficult in batch processing. For example, the position of the substrate can affect the rate at which the substrate is heated or cooled. Further, bottleneck effects that can cause a decrease in heat transfer rate and / or non-uniform heating or cooling can occur within the region of the chamber. Additionally, the adjustability can be limited. As an example, increasing the gas flow rate may not necessarily cause a corresponding change in heat transfer rate.

[0004] Such obstacles can lead to a decrease in throughput, an increase in cycle time, an increase in processing time, a decrease in modularity in the application, an increase in cost, an increase in carbon footprint, and / or non-uniform processing (e.g., deposition) of the substrate. Such obstacles can also cause non-uniformity and performance degradation in batch processing operations.

[0005] Therefore, there is a need for an improved chamber for batch heating and / or batch cooling in semiconductor processing.

Summary of the Invention

[0006] This disclosure relates to chambers for batch cooling or heating, as well as related methods and structures. In one or more embodiments, the chamber is used to batch heat or cool multiple substrates before (e.g., pre-treatment) or after (e.g., post-treatment) a processing operation for semiconductor applications (e.g., epitaxial deposition).

[0007] In one embodiment, a chamber usable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and one or more sidewalls define an internal space at least partially. The chamber includes a cassette disposed within the internal space. The cassette includes a first outer plate, a second outer plate spaced apart from the first outer plate, and a plurality of stepped sections between the first and second outer plates. The plurality of stepped sections include a plurality of substrate supports spaced apart from each other. The chamber includes one or more baffles disposed outward from the cassette.

[0008] In one embodiment, a chamber usable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and one or more sidewalls define an internal space at least partially. The chamber includes a cassette disposed within the internal space. The cassette includes a first outer plate, a second outer plate spaced apart from the first outer plate, and a plurality of stepped sections between the first and second outer plates. The plurality of stepped sections include a plurality of substrate supports spaced apart from each other. The chamber includes a plurality of baffles disposed outward from the cassette. The plurality of baffles include a first baffle located near the first outer plate, a second baffle spaced apart from the first baffle and located near the second outer plate, and a third baffle between the first and second baffles. The chamber includes a plurality of gas inlets formed in one or more sidewalls. The multiple gas inlets include one or more first gas inlets aligned between a first baffle and a first outer plate, one or more second gas inlets aligned between a second baffle and a second outer plate, one or more third gas inlets aligned between a first baffle and a third baffle, and one or more fourth gas inlets aligned between a second baffle and a third baffle.

[0009] In one embodiment, a chamber available for use in semiconductor manufacturing includes a base, a lid, and one or more side walls between the base and the lid. The base, the lid, and one or more side walls define at least partially an internal space. The chamber includes a shell disposed within the internal space. The shell includes a shell base, a shell lid, and one or more shell walls between the shell base and the shell lid. The shell base, the shell lid, and one or more shell walls define at least partially a shell space. The shell includes a plurality of gas inlets formed in one or more shell walls and spaced apart from each other along one or more shell walls, and a plurality of gas outlets formed in one or more shell walls and spaced apart from each other along one or more shell walls. The chamber includes a cassette disposed within the shell space. The cassette includes a first outer plate, a second outer plate spaced apart from the first outer plate, and a plurality of stepped portions between the first outer plate and the second outer plate. The plurality of stepped portions include a plurality of substrate supports spaced apart from each other.

[0010] To enable a more detailed understanding of the features of this disclosure described above, a more specific description of this disclosure, which is briefly summarized above, can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and should not be considered to limit the scope of this disclosure, as other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic top view of a system for processing substrates according to one embodiment. [Figure 2] This is a schematic partial cross-sectional view of a chamber according to one embodiment. [Figure 3] This is a schematic top cross-sectional view of the chamber along section 3-3 shown in Figure 2. [Figure 4] This is a schematic top cross-sectional view of the chamber along section 4-4 shown in Figure 2. [Figure 5] This is a schematic partial cross-sectional side view of a chamber according to one embodiment. [Figure 6] Figure 5 is a schematic top cross-sectional view along section 6-6 of the chamber shown. [Figure 7] This is a schematic partial cross-sectional side view of a chamber according to one embodiment. [Figure 8] This is a schematic top cross-sectional view of the chamber along section 8-8 shown in Figure 7. [Figure 9] These are schematic partial perspective views of the chamber shown in Figures 7 and 8 according to one embodiment. [Figure 10] This is a schematic partial cross-sectional side view of a chamber according to one embodiment. [Figure 11] This is a schematic top cross-sectional view of the chamber shown in Figure 10, along section 11-11 shown in Figure 10, according to one embodiment. [Figure 12] This is a schematic partial perspective view of the shell shown in Figure 11, according to one embodiment. [Figure 13] This is a schematic partial perspective view of the shell shown in Figure 10, according to one embodiment. [Figure 14] This is a schematic graph of a temperature (Celsius)-time (seconds) graph according to one or more embodiments. [Figure 15] This is a schematic graph of a temperature (Celsius)-time (seconds) graph according to one or more embodiments. [Figure 16] This is a schematic graph of a temperature (Celsius) - time (seconds) graph according to one embodiment. [Figure 17] This is a schematic partial cross-sectional side view of a chamber according to one embodiment. [Figure 18] This is a schematic top cross-sectional view of the chamber shown in Figure 17, along section 18-18 shown in Figure 17, according to one embodiment. [Modes for carrying out the invention]

[0012] For ease of understanding, where possible, the same reference numbers have been used to denote the same elements common to the figures. It is contemplated that elements and features of one embodiment can be beneficially incorporated into other embodiments without further recitation.

[0013] The present disclosure relates to chambers for batch cooling or heating and related methods and structures. In one or more embodiments, the chamber is used to batch heat or cool a plurality of substrates before (e.g., pre-treatment) or after (e.g., post-treatment) a processing operation for semiconductor applications (such as an epitaxial deposition process).

[0014] As used herein, the terms "couples," "coupling," "couple," and "coupled" are not limited and can include fastening by, for example, welding, brazing, melting, interference fitting, and / or the use of bolts, screw connections, pins, and / or screws. As used herein, the terms "couples," "coupling," "couple," and "coupled" are not limited and can include integrally molding. As used herein, the terms "couples," "coupling," "couple," and "coupled" are not limited and can include indirect couplings such as direct couplings and / or indirect couplings through components such as links.

[0015] Figure 1 is a schematic top view of a system 100 for processing substrates according to one embodiment. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102 and one or more transfer chambers 108 (one shown), in which a transfer robot 110 is located. The cluster tool 180 includes one or more processing chambers 124, 125, 126, 127 (four shown) and one or more cleaning chambers 128 (one shown), such as a pre-cleaning chamber, mounted on the main frame 151 of a single cluster tool 180. In the embodiment shown in Figure 1, two processing chambers are located on either side of the transfer chamber 108 and one cleaning chamber 128 is included. The disclosure intends that a larger or smaller number of processing chambers and / or pre-cleaning chambers may be available. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload substrates to and from each of two processing spaces in one of the processing chambers 124, 125, 126, and 127. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload two or more substrates to and from each of two cassettes located in two processing spaces in one of the processing chambers 124, 125, 126, and 127. In the embodiment shown in Figure 1, the transfer robot 110 is configured to simultaneously load and unload at least four substrates 109.

[0016] In the embodiment shown in FIG. 1, the factory interface 102 includes a docking station 140 and a factory interface robot 142 for facilitating the transfer of cassettes and / or substrates. The docking station 140 is configured to accommodate one or more front opening unified pods (FOUPs) 149. In one embodiment that can be combined with other embodiments, each factory interface robot 142 includes a support structure 148 (such as a blade) configured to transfer cassettes and / or substrates from the factory interface 102 to the load lock chambers 104, 106. The load lock chambers 104, 106 have respective doors 150, 152 connected to the factory interface 102 and respective doors 154, 156 connected to the transfer chamber 108. Chambers 124, 125, 126, 127, 128 have respective doors connected to the transfer chamber 108. The doors can include, for example, slit openings, and the slit openings include slit valves for allowing cassettes and / or substrates to pass through by the transfer robot 110 and providing seals between respective chambers to prevent gas from passing between the respective chambers. The doors can be opened to transfer cassettes and / or substrates through them during loading or unloading of the chambers. Otherwise, the doors can be closed.

[0017] One or more load lock chambers 104, 106 can include one or more chamber implementations described herein. For example, as described below, each of the load lock chambers 104, 106 can be used to heat or cool multiple substrates in a batch manner. The chamber implementations described herein can be used for other chambers of the system 100, such as one or more temporary storage chambers of the system 100. One or more processing chambers 124, 125, 126, 127 can include one or more processing chambers (such as one or more epitaxial deposition chambers) available from Applied Materials, Inc. of Santa Clara, California.

[0018] System 100 includes a controller 190 configured to control System 100 or its components. For example, the controller 190 can control the operation of System 100 by using direct control of the chambers 124, 125, 126, 127, and 128 of System 100, or by controlling controllers associated with the chambers 124, 125, 126, 127, and 128. During operation, the controller 190 can collect and provide feedback on data from each chamber to adjust and control the performance of System 100.

[0019] The controller 190 broadly includes a central processing unit (CPU) 192, memory 194, and support circuits 196. The CPU 192 may be any form of general-purpose computer processor available for use in an industrial setting. The memory 194 or non-transient computer-readable medium may be one or more memory accessible to the CPU 192, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. The support circuits 196 are connected to the CPU 192 and may include a cache, clock circuit, input / output subsystem, power supply, etc.

[0020] The various methods and operations described herein can generally be performed under the control of the CPU 192, by the CPU 192 executing computer instruction codes stored, for example, as software routines in memory 194 (or the memory of a particular processing chamber). Once the computer instruction codes are executed by the CPU 192, the CPU 192 controls the chamber to process according to the various methods and operations described herein. In one embodiment, which can be combined with other embodiments, the memory 194 (a non-transient computer-readable medium) stores instructions, which, when executed, cause the methods and operations described herein to be performed. The controller 190 can communicate, for example, with one or more gas sources 228 and one or more pumping devices 229 to perform multiple operations.

[0021] Other processing systems with different configurations are also conceivable. For example, more or fewer processing chambers may be connected to the transfer device. In the embodiment shown in Figure 1, the transfer device includes a transfer chamber 108. In other embodiments, more or fewer transfer chambers (e.g., one transfer chamber) may be implemented as transfer devices within a system for processing substrates.

[0022] Figure 2 is a schematic partial cross-sectional view of a chamber 200 according to one embodiment. As described above, the subject matter of the chamber invention (such as chamber 200) described herein can be used for a load lock chamber. The subject matter of the chamber invention described herein can also be used for other chambers, such as a temporary storage chamber. For example, a temporary storage chamber can be used for substrates that have reached a target temperature until a pre-washing chamber or a deposition chamber becomes available and / or until a transfer robot becomes available.

[0023] The chamber 200 includes a base 202, a lid 204, and one or more side walls 206 between the base 202 and the lid 204. In one or more embodiments, the base 202 and / or the lid 204 are arc-shaped, such as dome-shaped. The base 202, the lid 204, and the one or more side walls 206 define at least partially the internal space 208. In one or more embodiments, the base 202, the lid 204, and / or the one or more side walls 206 are joined together, for example, formed integrally with one another.

[0024] The chamber 200 includes a cassette 210 disposed within an internal space 208. The cassette 210 includes a first outer plate 212, a second outer plate 214 spaced apart from the first outer plate 212, and a plurality of stepped portions 213 between the first outer plate 212 and the second outer plate 214. In one or more embodiments, the first outer plate 212 is arc-shaped, such as a dome shape.

[0025] The multiple stepped sections 213 include multiple spaced substrate supports 216 between the first outer plate 212 and the second outer plate 214. The cassette 210 includes multiple support rods 215 extending between the first outer plate 212 and the second outer plate 214. For each of the multiple stepped sections 213, one set of substrate supports 216 is coupled to the multiple support rods 215 and extends inward relative to the multiple support rods 215. In one or more embodiments, the multiple support rods 215 include three support rods, and each support rod 215 includes one or more substrate supports 216. In one or more embodiments, each substrate support 216 includes a ledge such as a pin or an arc-shaped ring segment. The cassette 210 can be supported in the chamber 200, for example, using the second outer plate 214, which is supported by the base 202 using one or more support structures 219. One or more support structures 219 may include beams and / or may be circular, cylindrical, and / or rectangular in shape.

[0026] The chamber 200 includes one or more baffles 220 located outside the cassette 210. One or more baffles 220 are attached to one or more side walls 206. The disclosure intends that one or more baffles 220 are connectable to one or more side walls 206, for example, being integrally formed with one or more side walls 206. Multiple support rods 215 are positioned between one or more baffles 220 and multiple substrate supports 216. Each of the one or more baffles 220 includes an arc-shaped ring, the arc-shaped ring having flow openings 221 defining the arc-shaped ring segment of each baffle 220. A baffle 220 is included for each stepped section 213 of the cassette 210. In the embodiment shown in Figure 2, the chamber 200 includes 25 stepped sections 213 and 25 baffles 220. Each stepped section 213 of the cassette 210 supports one of a plurality of substrates 225. Other numbers (larger or smaller numbers, etc.) are possible for the stepped portion 213, the substrate 225, and the baffle 220.

[0027] In the embodiment shown in Figure 2, one or more baffles 220 include a first baffle 220a having a first flow opening 221a, and a second baffle 220b positioned at a distance from the first baffle 220a. The second baffle 220b has a second flow opening 221b, which is offset from the first flow opening 221a in a direction D1 toward the first outer plate 212 from the second outer plate 214.

[0028] The chamber 200 includes one or more gas inlets 226 formed in the lid 204 and extending outward from the first outer plate 212, and one or more gas outlets 227 formed in the base 202 and extending outward from the second outer plate 214. The one or more gas inlets 226 are in fluid communication with one or more gas sources 228 configured to supply one or more purge gases P1 into the internal space 208 of the chamber 200. The one or more purge gases P1 include inert gases or low-reactivity gases. In one or more embodiments, the one or more purge gases P1 include one or more of argon (Ar), helium (He), hydrogen (H2), nitrogen (N2), and / or any other purge gases. The one or more gas outlets 227 are in fluid communication with one or more pumping devices 229 (such as one or more vacuum pumps) configured to discharge one or more purge gases P1 from the internal space 208 of the chamber 200.

[0029] During a heat transfer process in which the substrate 225 is simultaneously heated or cooled, one or more purge gases P1 are supplied to the internal space 208 at a target temperature. One or more purge gases P1 may be heated or cooled to a target temperature before entering the internal space 208. The target temperature is higher than the reference temperature (e.g., pre-treatment heating of the substrate 225 in the case of heating) or lower than the reference temperature (e.g., post-treatment cooling of the substrate 225 in the case of cooling). The target temperature and / or reference temperature may depend on subsequent processing or processing temperature parameters (such as processing temperature parameters for subsequent processing). In one or more embodiments, the reference temperature is the processing temperature that will be used or has been used on the substrate 225 during a deposition process in which one or more layers are formed on the substrate 225. In one or more embodiments, the target temperature is in the range of 100°C to 400°C (e.g., in the case of pre-cleaning). In one or more embodiments, the target temperature is in the range of 350°C to 1100°C (for example, in the case of post-processing cooling followed by additional processing), for example, in the range of 800°C to 1100°C. In one or more embodiments, the target temperature is 30°C or higher (for example, after the completion of processing, when the substrate is stored). The deposition process may be, for example, epitaxial processing, chemical vapor deposition (CVD), atomic layer deposition (ALD), and / or physical vapor deposition (PVD). Other processing steps may be considered before or after the chamber 200 may be used for heating and / or cooling.

[0030] The baffle 220 with flow openings 221 facilitates the guidance of one or more purge gases P1 over the front and back surfaces of each substrate 225 for heating or cooling the substrates 225. For example, the baffle 220 with flow openings 221 facilitates the guidance of one or more purge gases P1 between the substrates 225, reducing or eliminating bottleneck effects, otherwise the flow of one or more purge gases P1 would concentrate outward from the substrates 225. The chamber 200 increases the velocity of the purge gases P1 between the substrates 225 and enhances the convection effect between one or more purge gases P1 and the substrates 225, thereby improving heat transfer coefficient, batch heating and / or cooling of substrates, reducing cycle and processing times, lowering operating costs, reducing the carbon footprint facilitated by better utilization of purge gases, increasing throughput, improving cooling and / or heating rates, adjustability of gas flow rate and heat transfer coefficient, and promoting modularity in applications. For example, the chamber 200 promotes a greater improvement in heat transfer when the gas flow rate of one or more purge gases P1 is increased.

[0031] In the embodiment shown in Figure 2, the flow openings 221 of the baffles 220 are offset from each other in an alternating arrangement in the flow direction D2 (opposite to direction D1), so that there is no line of sight passing through the flow openings 221 in the flow direction D2. The alternating arrangement defines a meandering gas flow pattern, which includes straight sections (between the substrates 225) and turned sections (outside the substrates 225).

[0032] In one or more embodiments, each of the first outer plate 212, the second outer plate 214, the support rod 215, one or more baffles 220, the base 202, the lid 204, and one or more side walls 206 is formed of aluminum. Other materials may also be considered for the chamber 200, such as materials for cost reduction and / or improved heat transfer efficiency.

[0033] Figure 3 is a schematic top cross-sectional view of the chamber 200 shown in Figure 2 along section 3-3. The flow opening 221 of each baffle 220 is defined by an angle A1 of 10 degrees or more, for example, 30 degrees or more. In one or more embodiments, the angle A1 is in the range of 55 to 65 degrees. In one or more embodiments, the angle A1 is approximately 60 degrees. Each baffle 220 is an arc-shaped ring segment, which is a C-shaped ring segment. The angle A2 of the arc-shaped ring segment is equal to 360 degrees minus the angle A1 of the flow opening 221. For example, if the angle A1 of the flow opening 221 is 30 degrees, the angle A2 of the arc-shaped ring segment is 330 degrees.

[0034] An annular gap 240 is located between the substrate 225 and one or more baffles 220. In one or more embodiments, the annular gap 240 is approximately 5.0 mm or less. In one or more embodiments, the annular gap 240 is approximately 2.0 mm. The size of the annular gap 240 may depend on processing parameters and / or performance parameters.

[0035] The positions of the support rods 215 are shown in Figure 3 for visual clarity in relation to Figure 2. In one or more embodiments, two support rods 215 aligned horizontally with each other in Figure 3 can move to two virtually shown positions 301a and 301b in Figure 3, thereby allowing the three support rods 215 to be arranged in a triangular configuration.

[0036] Figure 4 is a schematic top cross-sectional view of the chamber 200 shown in Figure 2 along section 4-4. As shown in Figures 3 and 4, the flow openings 221 of the baffle 220 are arranged alternately on both sides of the internal space 208.

[0037] Figure 5 is a schematic partial cross-sectional side view of a chamber 500 according to one embodiment. The chamber 500 is similar to the chamber 200 shown in Figure 2 and may include one or more features, aspects, components, operations, and / or characteristics thereof.

[0038] Within the chamber 500, one or more baffles include a first baffle 220a having a first flow opening 221a and a second baffle 220b positioned at a distance from the first baffle 220a. The second baffle 220b has a second flow opening 221b. The chamber 500 includes a third baffle 520 between the first baffle 220a and the second baffle 220b. The third baffle 520 has a solid ring. In one or more embodiments, the third baffle 520 is an intermediate baffle aligned with an intermediate step 213 of a plurality of steps 213.

[0039] The solid ring of the third baffle 520 divides the internal space 208 into a first side 508a and a second side 508b, thereby separating one or more purge gases P1 into each side 508a and 508b. On each side of the third baffle 520, the flow openings 221 of the baffle 220 are offset from each other by an alternating arrangement, thereby defining a meandering gas flow pattern on each side of the third baffle 520.

[0040] Chamber 500 includes a first gas inlet 526a formed in one or more side walls 206 on the first side of the third baffle 520, and a second gas inlet 526b formed in one or more side walls 206 on the second side of the third baffle 520. Chamber 500 also includes one or more first gas outlets 527a formed in the lid 204 and extending outward from the first outer plate 212, and one or more second gas outlets 527b formed in the base 202 and extending outward from the second outer plate 214.

[0041] Figure 6 is a schematic top cross-sectional view of the chamber 500 in Figure 5 along section 6-6.

[0042] Figure 7 is a schematic partial cross-sectional side view of a chamber 700 according to one embodiment. The chamber 700 is similar to the chamber 200 shown in Figure 2 and may include one or more of its features, aspects, components, operations, and / or characteristics. The chamber 700 is similar to the chamber 500 shown in Figure 5 and may include one or more of its features, aspects, components, operations, and / or characteristics.

[0043] The chamber 700 includes a plurality of baffles 520 positioned outside the cassette 210. Each baffle 520 has a solid ring. The plurality of baffles 520 include a first baffle 520a positioned near the first outer plate 212, a second baffle 520b positioned at a distance from the first baffle 520a and near the second outer plate 214, and a third baffle 520c between the first baffle 520a and the second baffle 520b. In the embodiment shown in Figure 7, 22 baffles 520 are positioned between the first baffle 520a and the second baffle 520b, with the addition of the third baffle 520c.

[0044] The chamber 700 includes a plurality of gas inlets 726 formed in one or more side walls 206. The plurality of gas inlets 726 include one or more first gas inlets 726a aligned between the first baffle 520a and the first outer plate 212, and one or more second gas inlets 726b aligned between the second baffle 520b and the second outer plate 214. The plurality of gas inlets 726 include one or more third gas inlets 726c aligned between the first baffle 520a and the third baffle 520c, and one or more fourth gas inlets 726d aligned between the second baffle 520b and the third baffle 520c.

[0045] The chamber 700 includes a plurality of gas outlets 727 formed in one or more side walls 206. The plurality of gas outlets 727 include one or more first gas outlets 727a aligned between the first baffle 520a and the first outer plate 212, and one or more second gas outlets 727b aligned between the second baffle 520b and the second outer plate 214. The plurality of gas inlets 727 include one or more third gas outlets 727c aligned between the first baffle 520a and the third baffle 520c, and one or more fourth gas outlets 727d aligned between the second baffle 520b and the third baffle 520c. As described above, each of the first baffle 520a, the second baffle 520b, and the third baffle 520c has a solid ring.

[0046] Each of the plurality of gas inlets 726 includes an inlet opening 731 formed in one or more side walls 206, and each of the plurality of gas outlets 727 includes an outlet opening 732 formed in one or more side walls 206. Each of the plurality of gas inlets 726 and the plurality of gas outlets 727 includes nozzles 733, 734 attached to one or more side walls 206.

[0047] The embodiment shown in Figure 7 includes one or more support structures 719, each of which includes one or more walls. One or more walls 720 are positioned between the first outer plate 212 and the lid 204. Using one or more walls of the one or more support structures 719 and one or more walls 720, the gas inlet 731 is fluidly separated from the gas outlet 732 in an area outside the cassette 210 (for example, separated from the gas outlet 732 by a partition).

[0048] Figure 8 is a schematic top cross-sectional view of the chamber 700 in Figure 7 along section 8-8.

[0049] Each of the one or more first gas inlets 726a, one or more second gas inlets 726b, one or more third gas inlets 726c, and one or more fourth gas inlets 726d includes a set of inlet openings 731 (three shown in Figure 8) spaced circumferentially apart from each other at an angle A3 along one or more sidewalls 206 (as shown for one or more first gas inlets 726a in Figure 8). The set of inlet openings 731 is capable of facilitating cross-flow of purge gas P1 over the substrate 225. Angle A3 is between the centerlines 739 of the inlet openings 731. In one or more embodiments, angle A3 is in the range of 10 to 90 degrees (e.g., 10, 20, 45, 60, or 90 degrees). In one or more embodiments, each inlet opening 731 includes a nozzle 733 that is in fluid communication with and / or at least partially inserted into each inlet opening 731. In one or more embodiments, each outlet opening 732 includes a nozzle 734 that is in fluid communication with and / or at least partially inserted into each outlet opening 732.

[0050] This disclosure intends that, where each nozzle 733, 734 is shown, a series of nozzles may be used. In one or more embodiments, the inlet opening 731 and the outlet opening 732 each have a circular or oval cross-sectional shape.

[0051] This disclosure intends that one outlet opening 732 may be used for each gas outlet 727, as shown in Figure 7.

[0052] One or more walls 720 are positioned at an angle A4 with respect to the direction 741 extending from the gas inlet 731 toward the gas outlet 727. The angle A4 is in the range of 20 to 150 degrees, for example, between 20 and 90 degrees or between 90 and 150 degrees. In Figure 8, the angle A4 is shown as 90 degrees.

[0053] Figure 9 is a schematic partial perspective view of the chamber 700 shown in Figures 7 and 8, according to one embodiment.

[0054] Each of the inlet openings 731 and / or outlet openings 732 is aligned such that each centerline axis 739 is positioned at a distance DS1 from the upper surface 257 of a nearby substrate 225 located below each of the openings 731 and 732. In one or more embodiments, the distance DS1 is 0.5 mm or more, and for example, in the range of 0.5 mm to 1.5 mm. In one or more embodiments, the distance DS1 is 1.0 mm.

[0055] Figure 10 is a schematic partial cross-sectional side view of a chamber 1000 according to one embodiment. Chamber 1000 is similar to chamber 200 shown in Figure 2 and may include one or more features, aspects, components, operations, and / or characteristics thereof.

[0056] Chamber 1000 includes a shell 1010 disposed within an internal space 208. The shell 1010 includes a shell base 1012, a shell lid 1014, and one or more shell walls 1016 between the shell base 1012 and the shell lid 1014. The shell base 1012, the shell lid 1014, and one or more shell walls 1016 define at least partially a shell space 1018. The shell 1010 includes a plurality of gas inlets 1031 formed in one or more shell walls 1016 and spaced apart from each other along one or more shell walls 1016, and a plurality of gas outlets 1032 formed in one or more shell walls 1016 and spaced apart from each other along one or more shell walls 1016. Each gas inlet 1031 and gas outlet 1032 is aligned between a first outer plate 212 and a second outer plate 214. Each gas inlet 1031 and gas outlet 1032 is aligned between two adjacent stepped portions 213 of the substrate support 216. The gas outlet 1032 is positioned circumferentially along one or more side walls 206, approximately 180 degrees away from the gas inlet 1031.

[0057] The shell 1010 may be supported within the chamber 1000 using a shell base 1012 supported by a base 202 using one or more second support structures 1039. One or more second support structures 1039 may include beams and / or be circular, cylindrical, and / or rectangular in shape.

[0058] The cassette 210 is located within the shell space 1018. In this disclosure, the baffle 220 may be omitted or included within the chamber 1000 (as shown in Figure 10).

[0059] Chamber 1000 includes a closed end 1027 of the shell base 1012 and a common outlet 1028 formed in the base 202. Each of the multiple gas inlets 1031 is in fluid communication with a common gas conduit 1029 that extends through the base 202. Chamber 1000 includes an outer annular channel 1041 around the shell 1010 and an inner annular channel 1042 inside the shell 1010. The inner annular channel 1042 is arranged around the cassette 210 and is fluidly separated (e.g., partitioned) using one or more walls 720 and one or more support structures 719. One or more purge gases P1 flow from the gas inlet 1031 over the substrate 225, through the gas outlet 1032, and out of the common outlet 1028.

[0060] In the embodiment shown in Figure 10, one or more walls 720 are located between the first outer plate 212 and the shell lid 1014.

[0061] In the embodiment shown in Figure 10, the gas inlet 1031 and gas outlet 1032 each include a size gradient that decreases from two intermediate inlets 1031a and two intermediate outlets 1032a to two terminal inlets 1031b, 1031c and two terminal outlets 1032b, 1032c. The disclosure intends that the sizes of the gas inlet 1031 and gas outlet 1031 may be substantially equal to each other, as shown in the embodiment of Figure 17 (see below).

[0062] Figure 11 is a schematic top cross-sectional view of the chamber 1000 shown in Figure 10, along section 11-11 shown in Figure 10, according to one embodiment. Figure 11 shows one of a plurality of stepped sections 213. In the embodiment shown in Figure 11, each stepped section 213 includes one or more gas inlets 1031, each containing one or more slots that extend circumferentially along one or more shell walls 1016 by a slot angle SA1. In one or more embodiments, the slot angle SA1 is 10 degrees or more, such as 30 degrees or more, for example, 45 degrees, 60 degrees, 90 degrees, or 120 degrees. In one or more embodiments, each stepped section 213 includes one or more gas outlets 1032, each containing one or more slots that extend circumferentially along one or more shell walls 1016 by a second slot angle SA2. In one or more embodiments, the second slot angle SA2 is smaller than the slot angle SA1. In one or more embodiments, the slot angle SA1 is in the range of 20 to 40 degrees, and the slots of each gas inlet 1031 and gas outlet 1032 have a height H1 in the range of 0.5 mm to 1.5 mm. In one or more examples, the slot angle SA1 is 30 degrees, and the height H1 is 1.0 mm.

[0063] The slot angle SA1 can, for example, promote greater coverage of the substrate 225 by the purge gas P1, thereby promoting a greater forced convection effect. The chamber 1000 promotes a heat transfer coefficient of 0.35 degrees Celsius / second or higher (e.g., 0.375 degrees Celsius / second or higher) across a batch of multiple substrates 225 (e.g., 25 substrates).

[0064] Figure 12 is a schematic partial perspective view of the shell 1010 shown in Figure 11, according to one embodiment.

[0065] Figure 13 is a schematic partial perspective view of the shell 1010 shown in Figure 10, according to one embodiment.

[0066] Figures 14 and 15 are schematic graphs of temperature (Celsius)-time (seconds) graphs 1400 and 1500 according to one or more embodiments. Each profile corresponds to the temperature of the respective substrate in each graph 1400 and 1500.

[0067] In Graph 1500 of Figure 15, a chamber containing the subject matter of the invention described herein is used to cool multiple substrates to a target temperature TE1. In Graph 1400 of Figure 14, a chamber with a different configuration is used to cool multiple substrates to the same target temperature TE1 using the same parameters (e.g., purge gas composition, purge gas temperature, and purge gas flow rate).

[0068] As shown in Graph 1500 of Figure 15, using the subject matter of the invention described herein, all substrates are cooled to the target temperature TE1 in time TI1, which is earlier than time TI2 in Figure 14. Faster heat transfer time promotes, for example, improved throughput and cost reduction.

[0069] Time TI1 can be set to approximately 80% of time TI2, representing a cycle time reduction of more than 20%. By using adjustability (such as increasing the purge gas flow rate), it is possible to set time TI1 to 50% to 60% of time TI2, which can represent a cycle time reduction of more than 40% to 50%.

[0070] Figure 16 is a schematic graph of a graph 1600 showing temperature (Celsius) - time (seconds) according to one embodiment.

[0071] As shown in Figure 16, using the subject matter of the invention described herein, multiple substrates are cooled at a more uniform cooling rate than, for example, the profile shown in Figure 14.

[0072] Figure 17 is a schematic partial cross-sectional side view of a chamber 1700 according to one embodiment. The chamber 1700 is similar to the chamber 1000 shown in Figure 10 and may include one or more of its features, aspects, components, operations, and / or characteristics.

[0073] Figure 18 is a schematic top cross-sectional view of the chamber 1700 shown in Figure 17, along section 18-18 shown in Figure 17, according to one embodiment. Figure 18 shows one of the multiple stepped sections 213.

[0074] The advantages of this disclosure include batch heating and / or cooling of substrates at more uniform heating and / or cooling rates, increased batch capacity (e.g., 25 or more substrates), reduced cycle and processing times, improved throughput, improved cooling and / or heating rates, adjustable gas flow rate and heat transfer coefficient, modularity in applications, reduced or eliminated bottleneck effects, and improved heat transfer coefficient (such as convection heat transfer coefficient). Such advantages are facilitated in a simple, cost-effective, and user-friendly manner. These advantages of the present application are facilitated by the realization of the disclosure. As an example, one or more embodiments (such as a chamber 700) facilitate the ability and flexibility to individually adjust the purge gas flow rate at each stage using separate gas inlets 731 and gas outlets 732, thereby ensuring that all substrates 225 are cooled or heated to a target temperature at substantially the same time. Reaching the target temperature at substantially the same time facilitates time savings (including reduced delays in subsequent processing) and improved throughput.

[0075] The embodiments described herein are intended to be combined. For example, one or more features, embodiments, components, operations, and / or characteristics of System 100, Chamber 200, Chamber 500, Chamber 700, Chamber 1000, and / or Chamber 1700 can be combined. Furthermore, it is intended that any combination will achieve the aforementioned advantages.

[0076] The above description applies to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. A chamber used in semiconductor manufacturing, Bass and, Lid and, One or more side walls between the base and the lid, wherein the base, the lid, and the one or more side walls define an internal space at least partially. A cassette arranged within the aforementioned internal space, First outer plate, A second outer plate positioned at a distance from the first outer plate, and A plurality of stepped portions between the first outer plate and the second outer plate, each comprising a plurality of substrate supports spaced apart from each other. Includes, cassette and One or more baffles positioned outside the aforementioned cassette, Equipped with, The one or more baffles mentioned above are A first baffle having a first flow opening, A second baffle is positioned at a distance from the first baffle and has a second flow opening, the second flow opening being offset from the first flow opening in the direction toward the first outer plate from the second outer plate, A chamber used in semiconductor manufacturing, including [a specific component].

2. The one or more baffles are attached to the one or more side walls, and the cassette is A plurality of support rods extending between the first outer plate and the second outer plate, wherein the plurality of support rods are positioned between the one or more baffles and the plurality of substrate supports. The chamber according to claim 1, further comprising:

3. The chamber according to claim 2, wherein, for each of the plurality of stepped portions, one set of substrate supports is coupled to the plurality of support rods and extends inward relative to the plurality of support rods.

4. The chamber according to claim 1, wherein the first baffle and the second baffle each include an arc-shaped ring, and the arc-shaped ring has the first flow opening and the second flow opening, respectively defining an arc-shaped ring segment.

5. The chamber according to claim 4, wherein the first flow opening and the second flow opening are defined by an angle of 10 degrees or more.

6. One or more gas inlets formed in the lid, located outside the first outer plate, One or more gas outlets formed in the base, located outside the second outer plate, The chamber according to claim 1, further comprising:

7. The one or more baffles mentioned above are A third baffle between the first baffle and the second baffle, the third baffle having a solid ring, The chamber according to claim 1, further comprising:

8. A first gas inlet formed in one or more side walls on the first side of the third baffle, A second gas inlet formed in one or more side walls on the second side of the third baffle, A first gas outlet formed in the lid, located outside the first outer plate, A second gas outlet formed in the base, located outside the second outer plate, The chamber according to claim 7, further comprising:

9. The chamber according to claim 1, wherein each of the first outer plate, the second outer plate, and the one or more baffles is made of aluminum.

10. A chamber used in semiconductor manufacturing, Bass and, Lid and, One or more side walls between the base and the lid, wherein the base, the lid, and the one or more side walls define an internal space at least partially. A cassette arranged within the aforementioned internal space, First outer plate, A second outer plate positioned at a distance from the first outer plate, and A plurality of stepped portions between the first outer plate and the second outer plate, each comprising a plurality of substrate supports spaced apart from each other. Includes, cassette and One or more baffles positioned outside the aforementioned cassette, Equipped with, The one or more baffles mentioned above are A first baffle having a first flow opening, A second baffle is positioned at a distance from the first baffle and has a second flow opening, A third baffle between the first baffle and the second baffle, the third baffle having a solid ring, including, A chamber used during semiconductor manufacturing.

11. A first gas inlet formed in one or more side walls on the first side of the third baffle, A second gas inlet formed in one or more side walls on the second side of the third baffle, A first gas outlet formed in the lid, located outside the first outer plate, A second gas outlet formed in the base, located outside the second outer plate, The chamber according to claim 10, further comprising:

12. The one or more baffles are attached to the one or more side walls, and the cassette is A plurality of support rods extending between the first outer plate and the second outer plate, wherein the plurality of support rods are positioned between the one or more baffles and the plurality of substrate supports. The chamber according to claim 10, further comprising:

13. The chamber according to claim 12, wherein one set of substrate supports is connected to the plurality of support rods for each of the plurality of stepped portions and extends inward relative to the plurality of support rods.

14. The chamber according to claim 10, wherein the first baffle and the second baffle each include an arc-shaped ring, and the arc-shaped ring has the first flow opening and the second flow opening, respectively defining an arc-shaped ring segment.

15. The chamber according to claim 14, wherein the first flow opening and the second flow opening are defined by an angle of 10 degrees or more.

16. The chamber according to claim 10, wherein each of the first outer plate, the second outer plate, and the one or more baffles is made of aluminum.

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