Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of reducing the processing time of substrates.SOLUTION: A substrate processing apparatus 100 has a substrate holding section 20, a stripping solution supply section 30, and an alkali solution supply section 40. The substrate holding section 20 holds and rotates a substrate W. The stripping solution supply section 30 supplies a stripping solution that removes a resist layer 203 to the substrate W, which is rotated by the substrate holding section 20. The alkali solution supply section 40 supplies an alkali solution to the substrate W while the stripping solution supplied from the stripping solution supply section 30 is on the substrate W.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Conventionally, a substrate processing apparatus for processing a substrate has been known. The substrate processing apparatus is suitably used for manufacturing a semiconductor substrate. The substrate processing apparatus processes a substrate using a processing liquid such as a chemical solution. As such a substrate processing apparatus, there is known a substrate processing apparatus that supplies a chemical solution such as SPM (a mixed solution of sulfuric acid and hydrogen peroxide water) to a substrate, then supplies a rinse liquid such as pure water to the substrate, and then supplies SC1 to the substrate (see, for example, Patent Document 1). Patent Document 1 describes a substrate processing apparatus that supplies SPM to a substrate, then supplies pure water to the substrate, and then supplies SC1 to the substrate. Such a substrate processing apparatus is used, for example, when removing a resist layer on a substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in Patent Document 1, in order to remove the resist layer, SPM is supplied to the substrate, then pure water is supplied, and then SC1 is supplied. Therefore, there is a problem that the processing time becomes long.

[0005] The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of shortening the processing time of a substrate.

Means for Solving the Problems

[0006] According to one aspect of the present invention, the substrate processing apparatus comprises a substrate holding unit, a stripping liquid supply unit, and an alkaline liquid supply unit. The substrate holding unit holds and rotates the substrate. The stripping liquid supply unit supplies a stripping liquid for stripping the resist layer to the substrate rotated by the substrate holding unit. The alkaline liquid supply unit supplies an alkaline liquid to the substrate while the stripping liquid supplied from the stripping liquid supply unit is present on the substrate.

[0007] In one embodiment, the stripping solution includes a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide solution.

[0008] In one embodiment, the stripping liquid supply unit supplies the stripping liquid to the substrate to cause cracks in the resist layer of the substrate. The alkaline liquid supply unit supplies the alkaline liquid to the substrate to cause the alkaline liquid to penetrate into the cracks.

[0009] In one embodiment, the substrate comprises a base material, a resist layer disposed on the base material, and an adhesive layer disposed between the base material and the resist layer. The alkaline liquid supply unit supplies the alkaline liquid to the substrate, causing the alkaline liquid to penetrate the cracks, and removes the adhesive layer with the alkaline liquid.

[0010] In one embodiment, the substrate processing apparatus further comprises a steam supply unit that supplies steam to the alkaline liquid supply unit. The alkaline liquid supply unit sprays a mixture of the alkaline liquid and the steam onto the substrate.

[0011] In one embodiment, the substrate processing apparatus further comprises a gas supply unit that supplies an inert gas to the alkaline liquid supply unit. The alkaline liquid supply unit sprays a mixture of the alkaline liquid and the inert gas onto the substrate.

[0012] In one embodiment, the alkaline liquid supply unit does not supply the alkaline liquid to the substrate, but the stripping liquid supply unit supplies the stripping liquid to the substrate, and then the alkaline liquid supply unit supplies the alkaline liquid to the substrate while the stripping liquid supply unit supplies the stripping liquid to the substrate. Subsequently, the stripping liquid supply unit supplies the stripping liquid to the substrate without the alkaline liquid supply unit supplying the alkaline liquid to the substrate.

[0013] According to another aspect of the present invention, a substrate processing method includes a stripping liquid supply step of supplying a stripping liquid for stripping a resist layer to a rotating substrate, and an alkaline liquid supply step of supplying an alkaline liquid to the substrate while the stripping liquid is present on the substrate.

[0014] In one embodiment, the stripping solution includes a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide solution.

[0015] In one embodiment, in the stripping solution supply step, the stripping solution is supplied to the substrate to cause cracks in the resist layer of the substrate. In the alkaline solution supply step, the alkaline solution is supplied to the substrate to allow the alkaline solution to penetrate into the cracks.

[0016] In one embodiment, the substrate comprises a base material, a resist layer disposed on the base material, and an adhesive layer disposed between the base material and the resist layer. In the alkali solution supply step, the alkali solution is supplied to the substrate to allow it to penetrate the cracks and remove the adhesive layer.

[0017] In one embodiment, the substrate processing method further includes a steam mixing step of mixing the alkaline solution and steam prior to the alkaline solution supply step. In the alkaline solution supply step, the mixture of the alkaline solution and steam is sprayed onto the substrate.

[0018] In one embodiment, the substrate processing method further includes a gas mixing step of mixing the alkaline solution and an inert gas prior to the alkaline solution supply step. In the alkaline solution supply step, a mixture of the alkaline solution and the inert gas is sprayed onto the substrate.

[0019] In one embodiment, the stripping solution supply step includes a first stripping solution supply step of supplying the stripping solution to the substrate without supplying the alkaline solution prior to the alkaline solution supply step, and a second stripping solution supply step of supplying the stripping solution to the substrate without supplying the alkaline solution after the alkaline solution supply step.

Advantages of the Invention

[0020] According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method capable of shortening the processing time of a substrate.

Brief Description of the Drawings

[0021] [Figure 1] It is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] It is a schematic diagram of a substrate processing unit in a substrate processing apparatus according to a first embodiment. [Figure 3] It is a block diagram of a substrate processing apparatus according to a first embodiment. [Figure 4] It is an enlarged cross-sectional view schematically showing the structure of a substrate. [Figure 5] It is an enlarged cross-sectional view schematically showing a state where a resist layer of a substrate is decomposed by a stripping solution. [Figure 6] It is an enlarged cross-sectional view schematically showing a state where cracks have occurred in a resist layer of a substrate due to a stripping solution. [Figure 7] It is an enlarged cross-sectional view schematically showing a state where an adhesive layer and a resist layer of a substrate are peeled off by an alkaline solution. [Figure 8] It is a schematic diagram showing an example of supplying an alkaline solution to a substrate while a stripping solution is present on the substrate. [Figure 9] It is a flowchart of a substrate processing method according to a first embodiment. [Figure 10] This is a flowchart of the substrate processing method according to the second embodiment. [Figure 11] This is a schematic diagram of a substrate processing unit in a substrate processing apparatus according to the third embodiment. [Figure 12] This is a flowchart of the substrate processing method according to the third embodiment. [Figure 13] This is a schematic diagram of the substrate processing unit in the substrate processing apparatus of the fourth embodiment. [Figure 14] This is a flowchart of the substrate processing method according to the fourth embodiment. [Figure 15] This is a schematic diagram of a substrate processing unit in a substrate processing apparatus, based on a modified example. [Modes for carrying out the invention]

[0022] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts will be denoted by the same reference numerals and will not be repeated in the description. In this specification, mutually orthogonal X, Y, and Z axes may be described to facilitate understanding of the invention. In this embodiment, the X and Y axes are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

[0023] (First Embodiment) A substrate processing apparatus 100 according to the first embodiment of the present invention will be described with reference to Figures 1 to 9. Figure 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment.

[0024] The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of the following: etching, surface treatment, characterization, treatment film formation, removal of at least a portion of the film, and cleaning.

[0025] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W is roughly disc-shaped. Here, the substrate processing apparatus 100 processes the substrate W one sheet at a time.

[0026] As shown in Figure 1, the substrate processing apparatus 100 comprises a plurality of substrate processing units 10, a processing liquid cabinet 110, a processing liquid box 120, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101. The control device 101 controls the load ports LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 104.

[0027] Each load port LP accommodates multiple substrates W stacked together. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing unit 10. Each of the substrate processing units 10 processes the substrates W by discharging a processing liquid onto them. The processing liquid includes, for example, a chemical solution, a rinsing solution, a removal solution, and / or a water repellent. The processing liquid cabinet 110 contains the processing liquid. The processing liquid cabinet 110 may also contain gas.

[0028] Specifically, the multiple substrate processing units 10 form multiple towers TW (four towers TW in Figure 1) arranged to surround the central robot CR in a plan view. Each tower TW contains multiple substrate processing units 10 (three substrate processing units 10 in Figure 1) stacked vertically. Each processing liquid box 120 corresponds to one of the multiple towers TW. The liquid in the processing liquid cabinet 110 is supplied to all substrate processing units 10 included in the tower TW corresponding to one of the processing liquid boxes 120 via one of the processing liquid boxes 120. Similarly, the gas in the processing liquid cabinet 110 is supplied to all substrate processing units 10 included in the tower TW corresponding to one of the processing liquid boxes 120 via one of the processing liquid boxes 120.

[0029] Typically, the processing liquid cabinet 110 has a preparation tank for preparing the processing liquid. The processing liquid cabinet 110 may have a preparation tank for one type of processing liquid, or it may have preparation tanks for multiple types of processing liquids. The processing liquid cabinet 110 also has a pump, nozzles, and / or filters for circulating the processing liquid.

[0030] The control device 101 controls various operations of the substrate processing device 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0031] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 may have, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computing unit.

[0032] The storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating multiple recipes. Each of the multiple recipes specifies the processing content and processing procedure for the substrate W.

[0033] The storage unit 104 includes a main memory and an auxiliary storage device. The main memory is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may also include removable media. The control unit 102 executes the computer program stored in the storage unit 104 to perform board processing operations.

[0034] Next, with reference to Figure 2, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described. Figure 2 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment.

[0035] As shown in Figure 2, the substrate processing unit 10 includes a chamber 11, a blower unit 12, a substrate holding unit 20, a stripping liquid supply unit 30, an alkaline liquid supply unit 40, a hydrogen peroxide supply unit 50, and a rinsing liquid supply unit 60.

[0036] Chamber 11 is a roughly box-shaped chamber with an internal space. Chamber 11 houses the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes substrates W one at a time, and each chamber 11 houses one substrate W. The substrates W are housed in and processed within Chamber 11. Chamber 11 houses at least a portion of each of the substrate holding section 20, stripping liquid supply section 30, alkaline liquid supply section 40, hydrogen peroxide supply section 50, and rinsing liquid supply section 60.

[0037] The blower unit 12 is positioned above or above the chamber 11. For example, the blower unit 12 is positioned on the top surface of the chamber 11. The blower unit 12 delivers air into the chamber 11. The blower unit 12 includes, for example, a fan filter unit (FFU). The blower unit 12 and an exhaust device (not shown) create a downflow within the chamber 11.

[0038] The substrate holder 20 holds the substrate W. The substrate holder 20 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the lower surface (back surface) Wb of the substrate W faces vertically downward. The substrate holder 20 also rotates the substrate W while holding it. For example, the upper surface Wa of the substrate W is provided with a laminated structure with recesses. The substrate holder 20 rotates the substrate W while holding it.

[0039] For example, the substrate holder 20 may be a clamping type that clamps the edges of the substrate W. Alternatively, the substrate holder 20 may have any mechanism for holding the substrate W from its lower surface Wb. For example, the substrate holder 20 may be a vacuum type. In this case, the substrate holder 20 holds the substrate W horizontally by adhering the central part of the lower surface Wb of the substrate W, which is the non-device forming surface, to its upper surface. Alternatively, the substrate holder 20 may combine a clamping type and a vacuum type, where a plurality of chuck pins contact the peripheral edge surface of the substrate W.

[0040] For example, the substrate holding section 20 includes a spin base 21, a chuck member 22, a shaft 23, a spin motor 24, and a housing 25. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, the spin base 21 is provided with multiple chuck members 22.

[0041] The shaft 23 extends vertically along the rotation axis AX. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed above the spin base 21.

[0042] The spin base 21 is disc-shaped. The chuck member 22 supports the substrate W horizontally. The shaft 23 extends downward from the center of the spin base 21. The spin motor 24 applies rotational force to the shaft 23. The spin motor 24 rotates the substrate W and the spin base 21 around the rotation axis AX by rotating the shaft 23 in the rotational direction. The housing 25 houses the shaft 23 and the spin motor 24.

[0043] The stripping liquid supply unit 30 supplies a stripping liquid to the substrate W to remove the resist layer. Typically, the stripping liquid supply unit 30 supplies the stripping liquid to the upper surface Wa of the substrate W. At least a portion of the stripping liquid supply unit 30 is housed in the chamber 11.

[0044] The stripping solution includes, for example, SPM (sulfuric acid hydrogen peroxide solution) or ozonated water. SPM is a sulfuric acid hydrogen peroxide solution obtained by mixing sulfuric acid and hydrogen peroxide solution. In the first embodiment, the stripping solution is SPM. The temperature of the SPM supplied to the substrate W is not particularly limited, but for example, it is 80°C or higher and less than 100°C. The temperature of the SPM supplied to the substrate W may be 100°C or higher, or 150°C or higher. Furthermore, the temperature of the SPM supplied to the substrate W may be 180°C or higher, or 200°C or higher.

[0045] The stripping liquid supply unit 30 includes a pipe 32, a valve 34, and a nozzle 36. The nozzle 36 discharges the stripping liquid onto the upper surface Wa of the substrate W. The nozzle 36 is connected to the pipe 32. The stripping liquid is supplied to the pipe 32 from a supply source. The pipe 32 may be connected to a tank storing a mixture of sulfuric acid and hydrogen peroxide (SPM). Alternatively, the pipe 32 may be configured to combine sulfuric acid and hydrogen peroxide in the middle of the flow path and supply it to the nozzle 36.

[0046] Valve 34 opens and closes the flow path in the piping 32. Valve 34 adjusts the flow rate of the stripping fluid supplied to the piping 32 by adjusting the degree of opening of the piping 32. Specifically, valve 34 includes, for example, a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0047] The nozzle 36 may be configured to be movable relative to the substrate W. The stripping liquid supply unit 30 may further have a nozzle moving unit 38. The nozzle moving unit 38 may raise and lower the nozzle 36, or rotate the nozzle 36 horizontally around a pivot axis. The nozzle moving unit 38 raises and lowers the nozzle 36. For example, the nozzle moving unit 38 includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 38 also rotates the nozzle 36 horizontally. For example, the nozzle moving unit 38 includes an electric motor.

[0048] In the first embodiment, while the stripping solution is supplied from the nozzle 36 to the substrate W, the nozzle moving unit 38 reciprocates the nozzle 36 horizontally. Specifically, the nozzle moving unit 38 moves the nozzle 36 so that the impact position of the stripping solution on the substrate W reciprocates between the center and the edge of the substrate W. This causes the impact position of the stripping solution on the substrate W to shift. The nozzle 36 may be fixed while the stripping solution is supplied from the nozzle 36 to the substrate W.

[0049] The alkaline solution supply unit 40 supplies alkaline solution to the substrate W. Typically, the alkaline solution supply unit 40 supplies alkaline solution to the upper surface Wa of the substrate W. At least a portion of the alkaline solution supply unit 40 is housed in the chamber 11.

[0050] The alkaline solution includes, for example, SC1 (a mixture of aqueous ammonia and aqueous hydrogen peroxide), aqueous ammonia, or TMAH (tetramethylammonium hydroxide). In the first embodiment, the alkaline solution includes SC1.

[0051] The alkaline liquid supply unit 40 includes a pipe 42, a valve 44, and a nozzle 46. The nozzle 46 discharges alkaline liquid onto the upper surface Wa of the substrate W. The nozzle 46 is connected to the pipe 42. Alkaline liquid is supplied to the pipe 42 from a supply source.

[0052] Valve 44 opens and closes the flow path in piping 42. Valve 44 adjusts the flow rate of alkaline liquid supplied to piping 42 by adjusting the degree of opening of piping 42. Specifically, valve 44 includes a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0053] The nozzle 46 may be configured to be movable relative to the substrate W. The alkaline liquid supply unit 40 may further include a nozzle moving unit 48. The nozzle moving unit 48 may raise and lower the nozzle 46, or rotate the nozzle 46 horizontally around a pivot axis. The nozzle moving unit 48 may be configured, for example, similarly to the nozzle moving unit 38.

[0054] In the first embodiment, while the alkaline liquid is supplied from the nozzle 46 to the substrate W, the nozzle moving unit 48 reciprocates the nozzle 46 horizontally. Specifically, the nozzle moving unit 48 moves the nozzle 46 so that the collision point of the alkaline liquid with the substrate W reciprocates between the center and the edge of the substrate W. This causes the collision point of the alkaline liquid with the substrate W to shift. The nozzle 46 may be fixed while the alkaline liquid is supplied from the nozzle 46 to the substrate W.

[0055] Although Figure 2 depicts nozzles 36 and 46 moving separately, they may be configured to move as a single unit. Specifically, for example, a connecting member may be provided to connect nozzles 36 and 46. Alternatively, only one of the nozzle moving parts 38 and 48 may be provided. Furthermore, both nozzles 36 and 46 may be moved by either the nozzle moving part 38 or the nozzle moving part 48.

[0056] The hydrogen peroxide supply unit 50 supplies hydrogen peroxide to the substrate W. Typically, the hydrogen peroxide supply unit 50 supplies hydrogen peroxide to the upper surface Wa of the substrate W. At least a portion of the hydrogen peroxide supply unit 50 is housed in the chamber 11.

[0057] The hydrogen peroxide supply unit 50 includes a pipe 52, a valve 54, and a nozzle 56. The nozzle 56 discharges hydrogen peroxide solution onto the upper surface Wa of the substrate W. The nozzle 56 is connected to the pipe 52. Hydrogen peroxide solution is supplied to the pipe 52 from a supply source. The valve 54 opens and closes the flow path in the pipe 52. The valve 54 adjusts the flow rate of hydrogen peroxide solution supplied to the pipe 52 by adjusting the opening degree of the pipe 52. Specifically, the valve 54 includes a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0058] The nozzle 56 may be configured to be movable relative to the substrate W. The superhydrogen water supply unit 50 may further include a nozzle moving unit 58. The nozzle moving unit 58 may raise and lower the nozzle 56, or rotate the nozzle 56 horizontally around a pivot axis. The nozzle moving unit 58 may be configured, for example, similarly to the nozzle moving unit 38.

[0059] The rinse liquid supply unit 60 supplies rinse liquid to the substrate W. Typically, the rinse liquid supply unit 60 supplies rinse liquid to the upper surface Wa of the substrate W. At least a portion of the rinse liquid supply unit 60 is housed in the chamber 11.

[0060] For example, rinse solutions include deionized water (DIW), carbonated water, electrolyzed ionized water, ozonated water, ammonia water, hydrochloric acid water at a diluted concentration (e.g., about 10 ppm to 100 ppm), or reduced water (hydrogen water). In the first embodiment, the rinse solution is deionized water (DIW).

[0061] The rinse liquid supply unit 60 includes a pipe 62, a valve 64, and a nozzle 66. The nozzle 66 discharges rinse liquid onto the upper surface Wa of the substrate W. The nozzle 66 is connected to the pipe 62. Rinse liquid is supplied to the pipe 62 from a supply source.

[0062] Valve 64 opens and closes the flow path in piping 62. Valve 64 adjusts the flow rate of rinse fluid supplied to piping 62 by adjusting the degree of opening of piping 62. Specifically, valve 64 includes a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0063] The nozzle 66 may be configured to be movable relative to the substrate W. The rinse liquid supply unit 60 may further include a nozzle moving unit 68. The nozzle moving unit 68 may raise and lower the nozzle 66, or rotate the nozzle 66 horizontally around a pivot axis. The nozzle moving unit 68 may be configured, for example, in the same way as the nozzle moving unit 38.

[0064] The substrate processing unit 10 further includes a cup 90. The cup 90 collects the processing liquid that has splashed from the substrate W. The cup 90 moves up and down. For example, the cup 90 rises vertically upward to the side of the substrate W during the period in which the stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50 and / or rinsing liquid supply unit 60 supply the stripping liquid, alkaline liquid, hydrogen peroxide and / or rinsing liquid to the substrate W. In this case, the cup 90 collects the stripping liquid, alkaline liquid, hydrogen peroxide and / or rinsing liquid that splashes from the substrate W as the substrate W rotates. The cup 90 also descends vertically downward from the side of the substrate W when the period in which the stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50 and / or rinsing liquid supply unit 60 supply the stripping liquid, alkaline liquid, hydrogen peroxide and / or rinsing liquid to the substrate W ends.

[0065] As described above, the control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 controls the blower unit 12, the substrate holding unit 20, the stripping liquid supply unit 30, the alkaline liquid supply unit 40, the hydrogen peroxide supply unit 50, the rinsing liquid supply unit 60 and / or the cup 90. In one example, the control unit 102 controls the blower unit 12, the spin motor 24, the valves 34, 44, 54, 64, the nozzle moving units 38, 48, 58, 68 and / or the cup 90.

[0066] The substrate processing apparatus 100 of the first embodiment is suitably used for manufacturing semiconductor devices on which semiconductors are provided. Typically, in a semiconductor device, a conductive layer and an insulating layer are laminated on a substrate. The substrate processing apparatus 100 is suitably used for cleaning and / or processing (e.g., etching, property change, etc.) the conductive layer and / or insulating layer during the manufacturing of the semiconductor device.

[0067] Next, the substrate processing apparatus 100 of the first embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100 of the first embodiment.

[0068] As shown in Figure 3, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, center robot CR, blower unit 12, substrate holding unit 20, stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50, rinse liquid supply unit 60, and cup 90. Specifically, the control device 101 controls the indexer robot IR, center robot CR, blower unit 12, substrate holding unit 20, stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50, rinse liquid supply unit 60, and cup 90 by transmitting control signals to them.

[0069] Furthermore, the storage unit 104 stores computer programs and data. The data includes recipe data. The recipe data includes information indicating multiple recipes. Each of the multiple recipes specifies the processing content, processing procedure, and board processing conditions for the substrate W. The control unit 102 executes the computer program stored in the storage unit 104 to perform the board processing operation.

[0070] The control unit 102 controls the indexer robot IR to transfer the substrate W using the indexer robot IR.

[0071] The control unit 102 controls the center robot CR to transfer the substrates W to the center robot CR. For example, the center robot CR receives an unprocessed substrate W and loads it into one of the multiple chambers 11. The center robot CR also receives the processed substrate W from the chamber 11 and unloads it.

[0072] The control unit 102 controls the blower unit 12 to send air into the chamber 11. For example, the control unit 102 controls the blower unit 12 and an exhaust device (not shown) to create a downflow within the chamber 11.

[0073] The control unit 102 controls the substrate holder 20 to control the attachment and detachment of the substrate W, the start of the rotation of the substrate W, the change in rotation speed, and the stop of the rotation of the substrate W. For example, the control unit 102 can change the rotation speed of the substrate holder 20 by controlling the substrate holder 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the spin motor 24 of the substrate holder 20.

[0074] The control unit 102 can control the valve 34 of the stripping liquid supply unit 30 to switch the state of the valve 34 between an open state and a closed state. Specifically, by controlling the valve 34 of the stripping liquid supply unit 30 to open the valve 34, the control unit 102 can allow the stripping liquid flowing through the piping 32 toward the nozzle 36 to pass through. Conversely, by controlling the valve 34 of the stripping liquid supply unit 30 to close the valve 34, the control unit 102 can stop the supply of stripping liquid flowing through the piping 32 toward the nozzle 36.

[0075] The control unit 102 can control the valve 44 of the alkaline liquid supply unit 40 to switch the state of the valve 44 between open and closed states. Specifically, by controlling the valve 44 of the alkaline liquid supply unit 40 to open the valve 44, the control unit 102 can allow the alkaline liquid flowing through the piping 42 toward the nozzle 46 to pass through. Conversely, by controlling the valve 44 of the alkaline liquid supply unit 40 to close the valve 44, the control unit 102 can stop the supply of alkaline liquid flowing through the piping 42 toward the nozzle 46.

[0076] The control unit 102 can control the valve 54 to switch its state between open and closed. Specifically, by controlling the valve 54 to open it, the control unit 102 can allow the hydrogen peroxide solution flowing through the pipe 52 to pass towards the nozzle 56. Conversely, by controlling the valve 54 to close it, the control unit 102 can stop the supply of hydrogen peroxide solution flowing through the pipe 52 towards the nozzle 56.

[0077] The control unit 102 can control the valve 64 of the rinse liquid supply unit 60 to switch the state of the valve 64 between an open state and a closed state. Specifically, by controlling the valve 64 of the rinse liquid supply unit 60 to open the valve 64, the control unit 102 can allow the rinse liquid flowing through the piping 62 toward the nozzle 66. Conversely, by controlling the valve 64 of the rinse liquid supply unit 60 to close the valve 64, the control unit 102 can stop the supply of rinse liquid flowing through the piping 62 toward the nozzle 66.

[0078] The control unit 102 may control the cup 90 to move it relative to the substrate W. Specifically, the control unit 102 raises the cup 90 vertically upward to the side of the substrate W during the period in which the stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50 and / or rinsing liquid supply unit 60 supply the stripping liquid, alkaline liquid, hydrogen peroxide and / or rinsing liquid to the substrate W. Furthermore, when the period in which the stripping liquid supply unit 30, alkaline liquid supply unit 40, hydrogen peroxide supply unit 50 and / or rinsing liquid supply unit 60 supply the stripping liquid, alkaline liquid, hydrogen peroxide and / or rinsing liquid to the substrate W ends, the control unit 102 lowers the cup 90 vertically downward from the side of the substrate W.

[0079] Next, with reference to Figures 4 to 8, the state of the upper surface Wa of the substrate W when the stripping solution and alkaline solution are supplied to the substrate W will be described. Figure 4 is an enlarged cross-sectional view schematically showing the structure of the substrate W. Figure 5 is an enlarged cross-sectional view schematically showing the state in which the resist layer 203 of the substrate W is decomposed by the stripping solution La. Figure 6 is an enlarged cross-sectional view schematically showing the state in which cracks are formed in the resist layer 203 of the substrate W by the stripping solution La. Figure 7 is an enlarged cross-sectional view schematically showing the state in which the adhesive layer 202 and the resist layer 203 of the substrate W are peeled off by the alkaline solution Lb. Figure 8 is a schematic diagram showing an example of supplying the alkaline solution Lb to the substrate W while the stripping solution La is present on the substrate W.

[0080] As shown in Figure 4, the substrate W has a base material 201, a resist layer 203 placed on the base material 201, and an adhesive layer 202 placed between the base material 201 and the resist layer 203.

[0081] The substrate 201 is, for example, a semiconductor wafer such as a silicon wafer. In the first embodiment, the substrate 201 is a silicon wafer.

[0082] The adhesive layer 202 adheres the substrate 201 and the resist layer 203. The adhesive layer 202 is made of, for example, a resin. The adhesive layer 202 is not particularly limited, but may contain, for example, hexamethyldisilazane (HMDS). The adhesive layer 202 is formed, for example, by hydrophobizing the substrate 201 using a treatment gas containing hexamethyldisilazane.

[0083] The resist layer 203 is made of resin. The resist layer 203 is not particularly limited, but for example, it is made of a photoresist material. The resist layer 203 is formed by curing an uncured resin that has been applied to the substrate W, for example, by irradiation with light of a specific wavelength. The resist layer 203 may also include, for example, a cured layer 203a and an uncured layer 203b. In this case, for example, the cured layer 203a is located on the side of the resist layer 203 opposite to the substrate 201 (upper side), and the uncured layer 203b is located on the side of the resist layer 203 toward the substrate 201 (lower side). The resist layer 203 may consist entirely of the cured layer 203a in the vertical direction.

[0084] As shown in Figure 5, when a stripping solution La is supplied to the upper surface Wa of the substrate W to remove the resist layer 203, the resist layer 203 is decomposed by the stripping solution La. Specifically, the stripping solution La reacts with the resist layer 203, causing it to dissolve. The stripping solution La dissolves the resist layer 203 from the surface of the resist layer 203 opposite to the substrate 201 (upper surface Wa) toward the substrate 201.

[0085] As shown in Figure 6, as the decomposition of the resist layer 203 by the stripping solution La progresses, cracks appear in the resist layer 203. When SPM is used as the stripping solution La, the dissolution rate of the resist layer 203 can be increased compared to when ozonated water is used as the stripping solution La. Also, when the temperature of the stripping solution La is increased, the dissolution rate of the resist layer 203 increases, and cracks are more likely to appear in the resist layer 203 compared to when the temperature of the stripping solution La is lowered. In other words, by using SPM as the stripping solution La or by increasing the temperature of the stripping solution La, it is possible to shorten the time until cracks appear in the resist layer 203.

[0086] Next, while the stripping liquid La supplied from the stripping liquid supply unit 30 is present on the substrate W, an alkaline solution is supplied to the substrate W. This causes the alkaline solution to penetrate into the cracks. As a result, as shown in Figure 7, the alkaline solution Lb reaches the adhesive layer 202 and removes the adhesive layer 202 from the substrate W. Specifically, for example, as shown in Figures 7 and 8, the stripping liquid supply unit 30 supplies the stripping liquid La to the substrate W while the alkaline solution supply unit 40 supplies the alkaline solution Lb to the substrate W. The alkaline solution Lb may penetrate the adhesive layer 202, causing it to swell and peel off the adhesive layer 202 from the substrate 201. Alternatively, the alkaline solution Lb may dissolve the adhesive layer 202. In this way, by removing the adhesive layer 202 from the substrate W with the alkaline solution Lb, the resist layer 203 is also removed from the substrate W. Specifically, the resist layer 203 is not completely removed by dissolution, but is removed in the form of fragments or small pieces.

[0087] Furthermore, by supplying alkaline solution Lb to the substrate W while the stripping solution La is present on the substrate W, the alkaline solution Lb can penetrate into the cracks while the stripping solution La dissolves the resist layer 203, causing cracks to form and expand. Therefore, the time required to strip the resist layer 203 can be shortened.

[0088] In this example, we have described supplying alkaline solution Lb to the substrate W after cracks have formed in the resist layer 203. However, the supply of alkaline solution Lb may be started before cracks form in the resist layer 203.

[0089] In particular, when SPM is used as the stripping solution La, supplying the alkaline solution Lb to the substrate W causes a reaction between the stripping solution La and the alkaline solution Lb, raising the temperature of the stripping solution La. Therefore, as described above, the time until cracks appear in the resist layer 203 can be shortened, and thus the time required to strip the resist layer 203 can be further reduced.

[0090] Furthermore, when using, for example, SC1 (a mixture of ammonia water and hydrogen peroxide) as the alkaline solution Lb, ammonia gas is generated in the processing solution (stripping solution La and alkaline solution Lb). This ammonia gas lifts fragments or small pieces of the resist layer 203 away from the substrate W and prevents the lifted fragments or small pieces from reattaching to the substrate W. Since the processing solution is at a high temperature, the ammonia gas and ammonia water contained in the processing solution after processing are discharged from the processing solution. Therefore, when the processing solution is recovered and reused after processing the substrate W, there is no need to remove ammonia from the processing solution.

[0091] Furthermore, when, for example, SC1 is used as the alkaline solution Lb, the alkaline solution Lb is neutralized by SPM over time. Therefore, even when, for example, SC1 is used as the alkaline solution Lb, adverse effects of the alkaline solution Lb on the silicon or titanium nitride of the substrate 201 can be suppressed.

[0092] As described above with reference to Figures 1 to 8, in the first embodiment, the substrate processing apparatus 100 includes a stripping liquid supply unit 30 that supplies stripping liquid La to the substrate W, and an alkaline liquid supply unit 40 that supplies alkaline liquid Lb to the substrate W while the stripping liquid La is present on the substrate W. Therefore, the alkaline liquid Lb can be applied to the substrate W while the resist layer 203 is being decomposed by the stripping liquid La. Specifically, in the first embodiment, the alkaline liquid Lb can penetrate into the cracks while the resist layer 203 is being dissolved by the stripping liquid La, and cracks are being generated and expanded. Therefore, the time required to strip the resist layer 203 can be shortened. In other words, the processing time for the substrate W can be shortened. Furthermore, if at least a portion of the time spent supplying the alkaline liquid Lb to the substrate W is overlapped with the time spent supplying the stripping liquid La to the substrate W, the processing time for the substrate W can be shortened even further.

[0093] Furthermore, as described above, the stripping solution La contains a sulfuric acid-hydrogen peroxide mixture, which is a mixture of sulfuric acid and hydrogen peroxide. Therefore, compared to the case where, for example, ozonated water is used as the stripping solution La, the stripping time of the resist layer 203 can be shortened.

[0094] Furthermore, as described above, the stripping liquid supply unit 30 supplies the stripping liquid La to the substrate W to cause cracks in the resist layer 203 of the substrate W, and the alkaline liquid supply unit 40 supplies the alkaline liquid Lb to the substrate W to allow the alkaline liquid Lb to penetrate into the cracks. Therefore, the alkaline liquid Lb reaches the deeper parts of the resist layer 203 (the part on the substrate 201 side) quickly, thus shortening the stripping time of the resist layer 203.

[0095] Furthermore, as described above, the alkaline solution supply unit 40 supplies alkaline solution Lb to the substrate W, allowing the alkaline solution Lb to penetrate into the cracks and remove the adhesive layer 202 with the alkaline solution Lb. Therefore, the resist layer 203 can be removed from the substrate W in the form of fragments or small pieces before the resist layer 203 is completely dissolved. Thus, the peeling time for the resist layer 203 can be further shortened.

[0096] Next, the substrate processing method of the first embodiment will be described with reference to Figures 4 to 9. Figure 9 is a flowchart of the substrate processing method of the first embodiment. The substrate processing method by the substrate processing apparatus 100 of the first embodiment includes steps S101 to S108. Steps S101 to S108 are executed by the control unit 102. Step S103 is an example of the "stripping liquid supply step" of the present invention. Step S104 is an example of the "alkaline liquid supply step" of the present invention.

[0097] As shown in Figure 9, in step S101, the substrate W is loaded into the chamber 11. Under the control of the control unit 102, the center robot CR loads the substrate W into the chamber 11, and the substrate holding unit 20 holds the loaded substrate W.

[0098] Next, in step S102, the rotation of the substrate W is started. Under the control of the control unit 102, the substrate holding unit 20 starts rotating the substrate W while holding it.

[0099] Next, in step S103, the stripping solution La is supplied to the substrate W to perform a stripping process on the substrate W. Under the control of the control unit 102, the stripping solution supply unit 30 supplies the stripping solution La from the nozzle 36 to the substrate W, which is rotated by the substrate holding unit 20. For example, the stripping solution supply unit 30 supplies SPM as the stripping solution La. As a result, the resist layer 203 of the substrate W is decomposed by the stripping solution La. Specifically, as shown in Figure 5, the stripping solution La dissolves the resist layer 203 from the surface of the resist layer 203 opposite to the substrate 201 (upper surface Wa) toward the substrate 201. Then, as shown in Figure 6, as the decomposition of the resist layer 203 by the stripping solution La progresses, cracks are formed in the resist layer 203. The amount of stripping solution La supplied to the substrate W is, for example, 0.5 L / min or more and 1.5 L / min or less.

[0100] Next, in step S104, alkaline solution Lb is supplied to the substrate W. Under the control of the control unit 102, the alkaline solution supply unit 40 supplies alkaline solution Lb to the substrate W from the nozzle 46. For example, the alkaline solution supply unit 40 supplies SC1 as alkaline solution Lb.

[0101] In this first embodiment, the alkaline solution supply unit 40 supplies alkaline solution Lb to the substrate W while the stripping solution La supplied from the stripping solution supply unit 30 is present on the substrate W.

[0102] Specifically, the stripping solution supply unit 30 may also supply the stripping solution La to the substrate W in step S104 following step S103. In this case, both the stripping solution La and the alkaline solution Lb are supplied to the substrate W in step S104.

[0103] Alternatively, the stripping liquid supply unit 30 does not need to supply the stripping liquid La to the substrate W in step S104. In this case, when the stripping liquid supply unit 30 stops supplying the stripping liquid La in step S103, the stripping liquid La is discharged from the substrate W by the rotation of the substrate W. Therefore, in step S104, the alkaline liquid supply unit 40 supplies the alkaline liquid Lb to the substrate W before the stripping liquid La is completely gone from the substrate W.

[0104] In the first embodiment, the stripping liquid supply unit 30 also supplies the stripping liquid La to the substrate W in step S104.

[0105] As shown in Figure 8, while the stripping solution La is present on the substrate W, the alkaline solution Lb is supplied to the substrate W, causing the stripping solution La to decompose the resist layer 203 while the alkaline solution Lb penetrates into the cracks. Then, as shown in Figure 7, the alkaline solution Lb reaches the adhesive layer 202, and the adhesive layer 202 is removed from the substrate W by the alkaline solution Lb. As a result, the resist layer 203 is also removed from the substrate W. The supply rate of alkaline solution Lb to the substrate W is, for example, 0.05 L / min or more and 0.2 L / min or less. Also, the supply rate of alkaline solution Lb is approximately 1 / 30 to 2 / 5 of the supply rate of stripping solution La.

[0106] Then, the control unit 102 stops supplying the alkaline solution Lb after a predetermined time has elapsed since the start of supplying the alkaline solution Lb. In the first embodiment, the control unit 102 stops supplying both the alkaline solution Lb and the stripping solution La after a predetermined time has elapsed since the start of supplying the alkaline solution Lb. Note that the stopping of the supply of the alkaline solution Lb and the stopping of the supply of the stripping solution La may be performed simultaneously. Also, the stopping of the supply of the alkaline solution Lb may be performed before or after the stopping of the supply of the stripping solution La.

[0107] Next, in step S105, the substrate W is rinsed by supplying rinsing liquid. Under the control of the control unit 102, the rinsing liquid supply unit 60 supplies rinsing liquid to the substrate W from the nozzle 66. For example, the rinsing liquid supply unit 60 supplies DIW as the rinsing liquid. Then, the control unit 102 stops supplying the rinsing liquid after a predetermined time has elapsed since the start of supplying the rinsing liquid.

[0108] Next, in step S106, the substrate W is dried. Under the control of the control unit 102, the substrate holding unit 20 increases the rotation speed of the substrate W to blow off the rinse liquid on the substrate W by centrifugal force.

[0109] Next, in step S107, the rotation of the substrate W is stopped. The substrate holding unit 20 stops the rotation of the substrate W under the control of the control unit 102.

[0110] Next, in step S108, the substrate W is removed from the substrate processing unit 10. Under the control of the control unit 102, the substrate holding unit 20 releases the substrate W, and the center robot CR removes the substrate W from the chamber 11. Subsequently, the substrate W is transported to the outside of the substrate processing apparatus 100 via the indexer robot IR.

[0111] The processing of substrate W is now complete.

[0112] (Second Embodiment) Next, with reference to Figure 10, a substrate processing apparatus 100 according to a second embodiment of the present invention will be described. Figure 10 is a flowchart of the substrate processing method of the second embodiment. The substrate processing method by the substrate processing apparatus 100 of the second embodiment includes steps S101 to S104, S111, S112, and S105 to S108. Steps S101 to S104, S111, S112, and S105 to S108 are executed by the control unit 102. Step S103 is an example of the "stripping liquid supply step" and "first stripping liquid supply step" of the present invention. Step S111 is also an example of the "stripping liquid supply step" and "second stripping liquid supply step" of the present invention. The configuration of the substrate processing apparatus 100 of the second embodiment is the same as that of the first embodiment described above.

[0113] As shown in Figure 10, steps S101 to S104 are the same as in the first embodiment.

[0114] In step S111, the stripping solution La is supplied to the substrate W. Under the control of the control unit 102, the stripping solution supply unit 30 supplies the stripping solution La from the nozzle 36 to the substrate W, which is rotated by the substrate holding unit 20. This removes, for example, any residue of the resist layer 203 and adhesive layer 202 remaining on the substrate W.

[0115] If the supply of the stripping solution La is not stopped in step S103, the stripping solution La continues to be supplied to the substrate W from step S103 to step S111. On the other hand, if the supply of the stripping solution La is stopped in step S103, the supply of the stripping solution La is resumed in step S111. In the second embodiment, the supply of the stripping solution La is not stopped in step S103, and the stripping solution La continues to be supplied to the substrate W from step S103 to step S111.

[0116] Then, the control unit 102 stops supplying the stripping liquid La after a predetermined time has elapsed since the start of supplying the stripping liquid La. Note that the total supply time of the stripping liquid La in steps S103, S104, and S111 in the second embodiment may be the same as the total supply time of the stripping liquid La in steps S103 and S104 in the first embodiment. Also, the total supply time of the stripping liquid La in steps S103 and S104 in the second embodiment may be the same as the total supply time of the stripping liquid La in steps S103 and S104 in the first embodiment. Note that in the second embodiment, the total supply time of the stripping liquid La in steps S103, S104, and S111 is the same as the total supply time of the stripping liquid La in steps S103 and S104 in the first embodiment. In other words, while the stripping liquid La is supplied to the substrate W for the time required for processing, the alkaline solution Lb is also supplied to the substrate W.

[0117] Next, in step S112, hydrogen peroxide solution is supplied to the substrate W. Under the control of the control unit 102, the hydrogen peroxide supply unit 50 supplies hydrogen peroxide solution from the nozzle 56 to the substrate W, which is rotated by the substrate holding unit 20. As a result, the stripping liquid La on the upper surface Wa of the substrate W is replaced with hydrogen peroxide solution. Then, after a predetermined time has elapsed since the start of hydrogen peroxide solution supply, the control unit 102 stops supplying hydrogen peroxide solution.

[0118] Next, steps S105 to S108 are performed in the same manner as in the first embodiment.

[0119] The processing of the substrate W is completed as described above. Other substrate processing methods in the second embodiment are the same as in the first embodiment.

[0120] In the second embodiment, as described above, the stripping solution supply step includes a first stripping solution supply step (step S103) in which stripping solution La is supplied to the substrate W without supplying alkaline solution Lb prior to the alkaline solution supply step (step S104), and a second stripping solution supply step (step S111) in which stripping solution La is supplied to the substrate W without supplying alkaline solution Lb after the alkaline solution supply step (step S104). Thus, a second stripping solution supply step (step S111) is provided in which stripping solution La is supplied to the substrate W without supplying alkaline solution Lb after the alkaline solution supply step (step S104). Therefore, the residue of the resist layer 203 and adhesive layer 202 remaining on the substrate W after the alkaline solution supply step (step S104) can be removed in the second stripping solution supply step (step S111).

[0121] Furthermore, in the second embodiment, as described above, in the alkaline solution supply step (step S104), the stripping solution supply unit 30 supplies the stripping solution La to the substrate W while the alkaline solution supply unit 40 supplies the alkaline solution Lb to the substrate W. Therefore, in the substrate processing method of the second embodiment, there is no time to supply only the alkaline solution Lb to the substrate W. In other words, the entire time spent supplying the alkaline solution Lb to the substrate W overlaps with the time spent supplying the stripping solution La to the substrate W. Thus, the processing time for the substrate W can be further shortened.

[0122] Other effects of the second embodiment are the same as those of the first embodiment.

[0123] (Third embodiment) Next, with reference to Figure 11, a substrate processing apparatus 100 according to a third embodiment of the present invention will be described. Figure 11 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the third embodiment. In the third embodiment, unlike the first and second embodiments, an example will be described in which a mixture of alkaline solution Lb and steam is sprayed onto the substrate W.

[0124] As shown in Figure 11, the alkaline solution supply unit 40 supplies alkaline solution Lb to the substrate W. In the third embodiment, the alkaline solution supply unit 40 sprays a mixture of alkaline solution Lb and steam onto the upper surface Wa of the substrate W. In other words, the alkaline solution supply unit 40 supplies atomized alkaline solution Lb to the upper surface Wa of the substrate W. The steam is, for example, high-temperature steam of pure water (DIW). In the third embodiment, the steam includes not only gas but also water that has solidified into a mist.

[0125] Specifically, the substrate processing unit 10 further includes a steam supply unit 70. The steam supply unit 70 supplies steam to the alkaline liquid supply unit 40. The steam supply unit 70 includes piping 72 and a valve 74. A nozzle 46 is further connected to the piping 72. Steam is supplied to the piping 72 from a supply source.

[0126] Valve 74 opens and closes the flow path in piping 72. Valve 74 adjusts the flow rate of steam supplied to piping 72 by adjusting the degree of opening of piping 72. Specifically, valve 74 includes a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0127] When valves 44 and 74 are opened, the nozzle 46 is supplied with alkaline liquid Lb and steam. The alkaline liquid Lb and steam are mixed in the nozzle 46, and the mixture of alkaline liquid Lb and steam is ejected from the nozzle 46 toward the substrate W. The alkaline liquid Lb and steam may be mixed, for example, inside the nozzle 46, or after passing through the discharge port of the nozzle 46. In the third embodiment, the alkaline liquid Lb and steam are mixed inside the nozzle 46.

[0128] The control unit 102 can control the valve 74 of the steam supply unit 70 to switch the state of the valve 74 between an open state and a closed state. Specifically, by controlling the valve 74 of the steam supply unit 70 to open the valve 74, the control unit 102 can allow steam flowing through the piping 72 toward the nozzle 46. Conversely, by controlling the valve 74 to close the valve 74, the control unit 102 can stop the supply of steam flowing through the piping 72 toward the nozzle 46.

[0129] The other configurations of the substrate processing apparatus 100 in the third embodiment are the same as those of the first and second embodiments described above.

[0130] In the third embodiment, as described above, the alkaline solution supply unit 40 sprays a mixture of alkaline solution Lb and steam onto the substrate W. Therefore, the alkaline solution Lb and steam are forcefully sprayed onto the substrate W. As a result, the alkaline solution Lb easily passes through the film of release solution La covering the upper surface Wa of the substrate W and easily penetrates into cracks. Therefore, the alkaline solution Lb easily reaches the adhesive layer 202. As a result, the adhesive layer 202 and the resist layer 203 become easier to remove from the substrate W.

[0131] Furthermore, in the third embodiment, the alkaline solution Lb and steam physically collide with the resist layer 203 and the adhesive layer 202. Therefore, the resist layer 203 and the adhesive layer 202 can also be removed by physical action. Thus, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W more quickly.

[0132] Next, with reference to Figure 12, a substrate processing apparatus 100 according to a third embodiment of the present invention will be described. Figure 12 is a flow chart of the substrate processing method of the third embodiment. In the third embodiment, an example will be described in which the substrate processing method further includes a step S201 (steam mixing step) in which an alkaline solution Lb and steam are mixed prior to step S104 (alkaline solution supply step). In the third embodiment, a part of the substrate processing method of the second embodiment shown in Figure 10 will be modified for description, but a part of the substrate processing method of the first embodiment shown in Figure 9 may also be modified. Step S201 is an example of the "steam mixing step" of the present invention.

[0133] The substrate processing method by the substrate processing apparatus 100 of the third embodiment includes steps S101 to S103, S201, S104, S111, S112, and S105 to S108. Steps S101 to S103, S201, S104, S111, S112, and S105 to S108 are performed by the control unit 102.

[0134] As shown in Figure 12, steps S101 to S103 are the same as in the second embodiment.

[0135] In step S201, the alkaline solution Lb and steam are mixed. Under the control of the control unit 102, the alkaline solution supply unit 40 supplies alkaline solution Lb to the nozzle 46, and the steam supply unit 70 supplies steam to the nozzle 46. As a result, the alkaline solution Lb and steam are mixed. A mixture of alkaline solution Lb and steam is generated in the nozzle 46, and the internal pressure of the nozzle 46 increases. Note that the start of supplying alkaline solution Lb and the start of supplying steam may occur simultaneously. Alternatively, the start of supplying alkaline solution Lb may occur before or after the start of supplying steam.

[0136] Next, in step S104, the alkaline solution Lb is supplied to the substrate W. In the third embodiment, a mixture of the alkaline solution Lb and steam is sprayed onto the substrate W. At this time, the alkaline solution Lb and steam are sprayed forcefully onto the substrate W. Therefore, the alkaline solution Lb is able to pass through the release solution La more easily and penetrate into the cracks compared to the first and second embodiments. As a result, the alkaline solution Lb is able to reach the adhesive layer 202 more easily. Consequently, the adhesive layer 202 and the resist layer 203 are easily removed from the substrate W.

[0137] Furthermore, in the third embodiment, the alkaline solution Lb and steam physically collide with the resist layer 203 and the adhesive layer 202. Therefore, the resist layer 203 and the adhesive layer 202 are also removed by physical action. Thus, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W more quickly.

[0138] Furthermore, in the third embodiment, since the alkaline solution Lb is heated to a high temperature by steam, the chemical reaction (dissolution) on the resist layer 203 and the adhesive layer 202 is also accelerated. Therefore, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W even faster.

[0139] The control unit 102 then stops supplying alkaline solution Lb and steam after a predetermined time has elapsed since the start of supplying the alkaline solution Lb and steam. Note that the stopping of the supply of alkaline solution Lb and the stopping of the supply of steam may occur simultaneously. Alternatively, the stopping of the supply of alkaline solution Lb may occur before or after the stopping of the supply of steam.

[0140] Next, steps S111 to S108 are performed in the same manner as in the second embodiment.

[0141] The processing of the substrate W is thus completed. Other substrate processing methods and other effects of the third embodiment are the same as those of the second embodiment.

[0142] (Fourth Embodiment) Next, with reference to Figure 13, a substrate processing apparatus 100 according to the fourth embodiment of the present invention will be described. Figure 13 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the fourth embodiment. In the fourth embodiment, unlike the first to third embodiments, an example in which an alkaline solution Lb and an inert gas are sprayed onto the substrate W will be described.

[0143] As shown in Figure 13, the alkaline solution supply unit 40 supplies alkaline solution Lb to the substrate W. In the fourth embodiment, the alkaline solution supply unit 40 sprays alkaline solution Lb and an inert gas onto the upper surface Wa of the substrate W. The inert gas is not particularly limited, but for example, nitrogen gas.

[0144] Specifically, the substrate processing unit 10 further includes a gas supply unit 80. The gas supply unit 80 includes piping 82 and a valve 84. In the fourth embodiment, unlike the third embodiment, the substrate processing unit 10 does not include a steam supply unit 70. The nozzle 46 is further connected to the piping 82. Inert gas is supplied to the piping 82 from a supply source.

[0145] Valve 84 opens and closes the flow path in piping 82. Valve 84 adjusts the flow rate of inert gas supplied to piping 82 by adjusting the degree of opening of piping 82. Specifically, valve 84 includes a valve body (not shown) with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0146] When valves 44 and 84 are opened, the nozzle 46 is supplied with alkaline liquid Lb and compressed inert gas. The alkaline liquid Lb and inert gas are mixed in the nozzle 46, and the mixture of alkaline liquid Lb and inert gas is ejected from the nozzle 46 toward the substrate W. At this time, the alkaline liquid Lb is ejected from the nozzle 46 in a mist. The droplet size of the alkaline liquid Lb is not particularly limited, but may be, for example, on the order of nanometers. The alkaline liquid Lb and inert gas may be mixed, for example, inside the nozzle 46, or after passing through the discharge port of the nozzle 46. In the fourth embodiment, the alkaline liquid Lb and inert gas are mixed inside the nozzle 46.

[0147] The control unit 102 can control the valve 84 of the gas supply unit 80 to switch the state of the valve 84 between an open state and a closed state. Specifically, by controlling the valve 84 of the gas supply unit 80 to open the valve 84, the control unit 102 can allow the inert gas flowing through the piping 82 toward the nozzle 46 to pass through. Conversely, by controlling the valve 84 to close the valve 84, the control unit 102 can stop the supply of inert gas flowing through the piping 82 toward the nozzle 46.

[0148] The other configurations of the substrate processing apparatus 100 in the fourth embodiment are the same as those of the first and second embodiments described above.

[0149] In the fourth embodiment, as described above, the alkaline solution supply unit 40 sprays a mixture of alkaline solution Lb and inert gas onto the substrate W. Therefore, the alkaline solution Lb and inert gas are forcefully sprayed onto the substrate W. As a result, the alkaline solution Lb easily passes through the film of release solution La covering the upper surface Wa of the substrate W and easily penetrates into cracks. Therefore, the alkaline solution Lb easily reaches the adhesive layer 202. As a result, the adhesive layer 202 and the resist layer 203 become easier to remove from the substrate W.

[0150] Furthermore, in the fourth embodiment, the alkaline solution Lb and the inert gas physically collide with the resist layer 203 and the adhesive layer 202. Therefore, the resist layer 203 and the adhesive layer 202 can also be removed by physical action. Thus, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W more quickly.

[0151] Next, with reference to Figure 14, a substrate processing apparatus 100 according to a fourth embodiment of the present invention will be described. Figure 14 is a flow chart of the substrate processing method of the fourth embodiment. In the fourth embodiment, an example will be described in which the substrate processing method further includes a step S301 (gas mixing step) in which an alkaline solution Lb and an inert gas are mixed prior to step S104 (alkaline solution supply step). In the fourth embodiment, a part of the substrate processing method of the second embodiment shown in Figure 10 will be modified for description, but a part of the substrate processing method of the first embodiment shown in Figure 9 may also be modified. Step S301 is an example of the "gas mixing step" of the present invention.

[0152] The substrate processing method by the substrate processing apparatus 100 of the fourth embodiment includes steps S101 to S103, S301, S104, S111, S112, and S105 to S108. Steps S101 to S103, S301, S104, S111, S112, and S105 to S108 are performed by the control unit 102.

[0153] As shown in Figure 14, steps S101 to S103 are the same as in the second embodiment.

[0154] In step S301, the alkaline solution Lb and the inert gas are mixed. Under the control of the control unit 102, the alkaline solution supply unit 40 supplies the alkaline solution Lb to the nozzle 46, and the gas supply unit 80 supplies the inert gas to the nozzle 46. As a result, the alkaline solution Lb and the inert gas are mixed. A mixture of the alkaline solution Lb and the inert gas is generated in the nozzle 46, and the internal pressure of the nozzle 46 increases. The supply of the alkaline solution Lb and the supply of the inert gas may be started simultaneously. Alternatively, the supply of the alkaline solution Lb may be started before or after the supply of the inert gas. Preferably, the amount of inert gas supplied to the substrate W is 100 times or more and 2000 times or less than the amount of alkaline solution Lb supplied. For example, the supply amount of inert gas is 5 L / min or more and 400 L / min or less.

[0155] Next, in step S104, the alkaline solution Lb is supplied to the substrate W. In the fourth embodiment, the alkaline solution Lb and inert gas are sprayed onto the substrate W. At this time, the alkaline solution Lb and inert gas are sprayed forcefully onto the substrate W. Therefore, compared to the first and second embodiments, the alkaline solution Lb is able to pass through the film of the release solution La on the substrate W and penetrate into the cracks more easily. As a result, the alkaline solution Lb is able to reach the adhesive layer 202 more easily. Consequently, the adhesive layer 202 and the resist layer 203 are easier to remove from the substrate W.

[0156] Furthermore, in the fourth embodiment, the alkaline solution Lb and the inert gas physically collide with the resist layer 203 and the adhesive layer 202. Therefore, the resist layer 203 and the adhesive layer 202 are also removed by physical action. Thus, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W more quickly.

[0157] The control unit 102 then stops supplying the alkaline solution Lb and the inert gas after a predetermined time has elapsed since the start of supplying the alkaline solution Lb and the inert gas. Note that the stopping of the supply of alkaline solution Lb and the stopping of the supply of inert gas may be performed simultaneously. Also, the stopping of the supply of alkaline solution Lb may be performed before or after the stopping of the supply of inert gas.

[0158] Next, steps S111 to S108 are performed in the same manner as in the second embodiment.

[0159] The processing of the substrate W is thus completed. Other substrate processing methods and other effects of the fourth embodiment are the same as those of the second embodiment.

[0160] (modified version) Next, with reference to Figure 15, a modified substrate processing apparatus 100 of the present invention will be described. Figure 15 is a schematic diagram of the substrate processing unit 10 in the modified substrate processing apparatus 100. In this modified example, unlike the first to fourth embodiments, an example in which ultrasonic vibration is applied to the stripping liquid La will be described. Here, a part of the configuration of the substrate processing unit 10 of the first embodiment shown in Figure 2 will be changed for the description, but a part of the configuration of the substrate processing unit 10 of the third or fourth embodiment may also be changed.

[0161] As shown in Figure 15, the substrate processing unit 10 further includes an ultrasonic oscillator 150 having an ultrasonic oscillator. The ultrasonic oscillator emits ultrasonic waves. The ultrasonic oscillator is not particularly limited, but it is preferably made of platinum, which has excellent acid resistance. In this modified example, the ultrasonic oscillator 150 is located in the stripping liquid supply unit 30. Specifically, the ultrasonic oscillator 150 is located around the nozzle 36 in the piping 32 of the stripping liquid supply unit 30. Alternatively, the ultrasonic oscillator 150 may be located at the nozzle 36 of the stripping liquid supply unit 30.

[0162] The ultrasonic oscillator 150 applies ultrasonic vibrations to the stripping solution La. This allows ultrasonic vibrations to be applied to the resist layer 203 and adhesive layer 202 of the substrate W via the stripping solution La. Therefore, the resist layer 203 and adhesive layer 202 can be removed from the substrate W more quickly.

[0163] Alternatively, the ultrasonic oscillator 150 applies ultrasonic vibrations to the stripping solution La, causing bubbles to form in the stripping solution La. The size of the bubbles is not particularly limited, but they may be, for example, microbubbles or nanobubbles. The bubbles in the stripping solution La physically act on the resist layer 203 and the adhesive layer 202, promoting their removal. Thus, the resist layer 203 and the adhesive layer 202 can be removed from the substrate W more quickly.

[0164] In this example, the ultrasonic oscillator 150 is placed in the stripping solution supply unit 30 to apply ultrasonic vibrations to the stripping solution La. However, for example, the ultrasonic oscillator 150 may be placed in the alkaline solution supply unit 40 to apply ultrasonic vibrations to the alkaline solution Lb.

[0165] Embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from the spirit of the invention. Furthermore, various inventions can be formed by appropriately combining the multiple components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings schematically show each component in order to make them easy to understand, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Also, the material, shape, dimensions, etc. of each component shown in the above embodiments are examples and are not particularly limited, and various modifications are possible without substantially departing from the effects of the present invention.

[0166] For example, in the third embodiment, an example of spraying a mixture of alkaline liquid Lb and steam was described. That is, an example of ejecting high-temperature, misty alkaline liquid Lb was described. In the fourth embodiment, an example of spraying a mixture of alkaline liquid Lb and an inert gas was described. That is, an example of ejecting misty alkaline liquid Lb was described. However, the present invention is not limited to these. For example, alkaline liquid Lb may be supplied to the substrate W in a shower-like manner.

[0167] The stripping solution La may also be supplied to the substrate W in the same manner as the alkaline solution Lb. That is, the stripping solution La may be sprayed from the nozzle 36 in a mist form. In this case, the high-temperature mist form of stripping solution La may be sprayed from the nozzle 36. Alternatively, the stripping solution La may be supplied to the substrate W in a shower form.

[0168] Furthermore, while the first to fourth embodiments described an example in which SC1 is used as the alkaline solution Lb, the present invention is not limited thereto. For example, TMAH may be used as the alkaline solution Lb. In this case, since TMAH is less reactive with silicon or titanium nitride than SC1, it is possible to suppress adverse effects of the alkaline solution Lb on the silicon or titanium nitride of the substrate 201.

[0169] Furthermore, in the first to fourth embodiments, an example was described in which a mixture of sulfuric acid and hydrogen peroxide is used as the stripping liquid La, and the sulfuric acid-hydrogen peroxide mixture is supplied from the supply source to the piping 32. However, the present invention is not limited to this. For example, sulfuric acid and hydrogen peroxide may be merged in the middle of the piping 32 and supplied to the nozzle 36. In this case, by stopping the supply of sulfuric acid, it is possible to supply only hydrogen peroxide to the nozzle 36 and supply hydrogen peroxide to the substrate W. Therefore, it is not necessary to provide a hydrogen peroxide supply unit 50. [Industrial applicability]

[0170] The present invention is suitably used in substrate processing apparatus and substrate processing methods. [Explanation of Symbols]

[0171] 20: Board holding part 30: Stripping liquid supply unit 40: Alkaline solution supply unit 70: Steam supply unit 80: Gas Supply Department 100: Substrate processing equipment 201: Base material 202: Adhesive layer 203: Resist layer La: Stripping agent Lb: Alkaline solution S103: Step (stripping solution supply process, first stripping solution supply process) S104: Step (Alkaline solution supply process) S111: Step (Stripping solution supply step, Second stripping solution supply step) S201: Step (Steam mixing process) S301: Step (gas mixing process) W: Circuit board

Claims

1. A substrate holding unit for holding and rotating a substrate having a substrate, a resist layer disposed on the substrate, and an adhesive layer disposed between the substrate and the resist layer, A stripping liquid supply unit supplies a stripping liquid for stripping the resist layer to the substrate which is rotated by the substrate holding unit, While the stripping liquid supplied from the stripping liquid supply unit is present on the substrate, an alkaline liquid supply unit supplies alkaline liquid to the substrate. Equipped with, The stripping liquid supply unit supplies the stripping liquid to the substrate to cause cracks in the resist layer. The alkaline liquid supply unit supplies the alkaline liquid to the substrate, causing the alkaline liquid to penetrate the cracks, and the alkaline liquid removes the adhesive layer, thereby providing a substrate processing apparatus.

2. The substrate processing apparatus according to claim 1, wherein the stripping solution includes a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide.

3. The system further includes a steam supply unit that supplies steam to the alkaline liquid supply unit, The substrate processing apparatus according to claim 1 or claim 2, wherein the alkaline liquid supply unit sprays a mixture of the alkaline liquid and the steam onto the substrate.

4. The system further comprises a gas supply unit that supplies an inert gas to the alkaline liquid supply unit, The substrate processing apparatus according to claim 1 or claim 2, wherein the alkaline liquid supply unit sprays a mixture of the alkaline liquid and the inert gas onto the substrate.

5. The alkaline solution supply unit does not supply the alkaline solution to the substrate, and the stripping solution supply unit supplies the stripping solution to the substrate after the stripping solution has been supplied to the substrate. While the stripping liquid supply unit supplies the stripping liquid to the substrate, the alkaline liquid supply unit supplies the alkaline liquid to the substrate. The substrate processing apparatus according to claim 1 or claim 2, wherein the alkaline liquid supply unit does not supply the alkaline liquid to the substrate, and the stripping liquid supply unit supplies the stripping liquid to the substrate.

6. A stripping liquid supply step of supplying a stripping liquid to the substrate while rotating the substrate having a substrate, a resist layer disposed on the substrate, and an adhesive layer disposed between the substrate and the resist layer, An alkaline solution supply step in which an alkaline solution is supplied to the substrate while the stripping solution is present on the substrate, Includes, In the stripping solution supply step, the stripping solution is supplied to the substrate to cause cracks in the resist layer. A substrate processing method comprising the step of supplying the alkaline solution to the substrate, thereby allowing the alkaline solution to penetrate the cracks and remove the adhesive layer.

7. The substrate treatment method according to claim 6, wherein the stripping solution includes a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide.

8. Prior to the alkaline solution supply step, the process further includes a steam mixing step in which the alkaline solution and steam are mixed, The substrate processing method according to claim 6 or claim 7, wherein in the alkaline solution supply step, a mixture of the alkaline solution and the steam is sprayed onto the substrate.

9. Prior to the alkaline solution supply step, the process further includes a gas mixing step of mixing the alkaline solution with an inert gas, The substrate processing method according to claim 6 or 7, wherein in the alkaline solution supply step, a mixture of the alkaline solution and the inert gas is sprayed onto the substrate.

10. The aforementioned stripping solution supply step is, Prior to the alkaline solution supply step, a first stripping solution supply step is performed in which the stripping solution is supplied to the substrate without supplying the alkaline solution, A second stripping solution supply step is performed after the alkaline solution supply step, in which the stripping solution is supplied to the substrate without supplying the alkaline solution. A substrate processing method according to claim 6 or claim 7, including the method described in claim 6 or 7.

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