Semiconductor equipment

Abstract

This semiconductor device comprises a plurality of first semiconductor elements, a control terminal, a first conductive member, and a plurality of first circuit components. The plurality of first semiconductor elements are connected to one another in parallel, and the switching operation of each is controlled in accordance with a first drive signal input to a third electrode thereof. The first conductive member is electrically connected to the control terminal that is used for input of the first drive signal, and is electrically interposed between the third electrodes. The first conductive member includes a plurality of connection members and some of a signal wiring part. Each first circuit component increases impedance in a first frequency band. The first frequency band includes the resonant frequency of a resonant circuit formed including the parasitic inductance of the first conductive member. The respective third electrodes of the plurality of first semiconductor elements are electrically connected to one another via at least one of the plurality of first circuit components.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. In such a semiconductor device, in order to ensure the allowable current of the semiconductor device, a configuration in which a plurality of power semiconductor devices are connected in parallel is known (for example, Patent Document 1). The power module described in Patent Document 1 includes a plurality of first semiconductor elements, a plurality of first connection wirings, a wiring layer, and signal terminals. The plurality of first semiconductor elements are, for example, composed of MOSFETs. Each first semiconductor element is turned on and off in response to a drive signal input to the gate terminal. The plurality of first semiconductor elements are connected in parallel. The plurality of first connection wirings are, for example, wires, and connect the gate terminals of the plurality of first semiconductor elements to the wiring layer. The wiring layer is connected to the signal terminals. The signal terminals are connected to the gate terminals of each first semiconductor element via the wiring layer and each first connection wiring. The signal terminals supply a drive signal for driving each first semiconductor element to the gate terminals of each first semiconductor element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] As described in Patent Document 1, when multiple semiconductor elements are connected in parallel, a resonance phenomenon may occur when each semiconductor element is switched (on / off driven). This resonance phenomenon can cause the drive signals of multiple semiconductor elements to vibrate, which can lead to malfunction or destruction of each semiconductor element.

[0005] This disclosure was conceived in view of the above circumstances, and one of its objectives is to provide a semiconductor device capable of suppressing resonance phenomena that occur when multiple semiconductor elements are operated in parallel. [Means for solving the problem]

[0006] The semiconductor device of the present disclosure comprises a plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, the switching operation of which is controlled in accordance with a first drive signal input to the third electrode; a first control terminal for inputting the first drive signal; a first conductive member that conducts to the first control terminal and is electrically interposed between the third electrodes of the plurality of first semiconductor elements; and a plurality of first circuit components connected to the first conductive member for increasing impedance in a first frequency band, wherein the plurality of first semiconductor elements are electrically connected in parallel with each other, the first frequency band includes the resonant frequency of a resonant circuit formed including the parasitic inductance of the first conductive member, and the third electrodes of the plurality of first semiconductor elements are electrically connected to each other via at least one of the plurality of first circuit components. [Effects of the Invention]

[0007] According to the semiconductor device of this disclosure, resonance phenomena can be suppressed. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a perspective view of Figure 1 with the resin component omitted. [Figure 3]Figure 3 is a plan view showing a semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a plan view of Figure 3, in which the resin components are indicated by dashed lines. [Figure 5] Figure 5 is an enlarged plan view of a key part of Figure 4 (near the first semiconductor element). [Figure 6] Figure 6 is an enlarged plan view of a key part of Figure 4 (near the second semiconductor element). [Figure 7] Figure 7 is a plan view of Figure 4, with the multiple control terminals, multiple detection terminals, multiple connecting members, and resin members omitted. [Figure 8] Figure 8 is a plan view of Figure 7 with some power wiring sections and several signal wiring sections omitted. [Figure 9] Figure 9 is a plan view of Figure 8 with the insulating substrate omitted. [Figure 10] Figure 10 is a bottom view showing a semiconductor device according to the first embodiment. [Figure 11] Figure 11 is a cross-sectional view along the line XI-XI in Figure 4. [Figure 12] Figure 12 is a cross-sectional view along the line XII-XII in Figure 4. [Figure 13] Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 4. [Figure 14] Figure 14 is a cross-sectional view along the line XIV-XIV in Figure 4. [Figure 15] Figure 15 is an enlarged cross-sectional view of a key part of Figure 14 (near the first semiconductor element). [Figure 16] Figure 16 is an enlarged cross-sectional view of a key part, specifically a portion of Figure 14 (near the second semiconductor element). [Figure 17] Figure 17 shows an example of the circuit configuration of a semiconductor device according to the first embodiment. [Figure 18] Figure 18 is a plan view showing a semiconductor device according to the second embodiment, in which resin members are indicated by dashed lines. [Figure 19]FIG. 19 is a diagram showing a circuit configuration example of the semiconductor device according to the second embodiment. [Figure 20] FIG. 20 is a plan view showing the semiconductor device according to the third embodiment, in which a resin member is shown by an imaginary line. [Figure 21] FIG. 21 is a diagram showing a circuit configuration example of the semiconductor device according to the third embodiment. [Figure 22] FIG. 22 is a plan view showing the semiconductor device according to the fourth embodiment, in which a resin member is shown by an imaginary line. [Figure 23] FIG. 23 is a diagram showing a circuit configuration example of the semiconductor device according to the fourth embodiment. [Figure 24] FIG. 24 is a perspective view showing the semiconductor device according to the modification. [Figure 25] FIG. 25 is a plan view showing the semiconductor device shown in FIG. 24, with a part thereof being transparent.

Embodiments for Carrying Out the Invention

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, for the same or similar elements, the same reference numerals will be used and duplicate descriptions will be omitted. Terms such as "first", "second", "third", etc. in the present disclosure are merely used as labels and are not necessarily intended to assign an order to those objects.

[0010] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed from a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0011] Figures 1 to 17 show a semiconductor device A1 according to the first embodiment. The semiconductor device A1 comprises a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a plurality of circuit components 3, a support member 4, an insulating substrate 50, a plurality of power wiring sections 511 to 514, a plurality of signal wiring sections 52 to 56, a pair of control terminals 61 and 62, a plurality of detection terminals 63 to 65, a plurality of connecting members 7, and a resin member 8. The plurality of connecting members 7 includes a plurality of connecting members 71, 72, 731, 732, 741, and 742. In Figure 4, the resin member 8 is shown by a dashed line (two-dotted line).

[0012] For the sake of explanation, the thickness direction of multiple first semiconductor elements 1 and multiple second semiconductor elements 2 is referred to as the "thickness direction z". In the following explanation, "plan view" refers to the view in the thickness direction z. One direction perpendicular to the thickness direction z is called the "first direction x". The first direction x is, for example, the left-right direction in the plan view of semiconductor device A1 (see Figures 3 and 4). The direction perpendicular to the thickness direction z and the first direction x is called the "second direction y". The second direction y is, for example, the up-down direction in the plan view of semiconductor device A1 (see Figures 3 and 4).

[0013] Each of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2 is, for example, a MOSFET. Each of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2 may also be other switching elements, such as field-effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs) or bipolar transistors including IGBTs, instead of MOSFETs. Each of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2 is constructed using SiC (silicon carbide). The semiconductor material is not limited to SiC, but may also be Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), or Ga2O3 (gallium oxide), etc.

[0014] Each of the multiple first semiconductor elements 1 has an element main surface 10a and an element back surface 10b, as shown in Figure 15. The element main surface 10a and the element back surface 10b are spaced apart from each other in the thickness direction z. The element main surface 10a faces one direction (upwards) in the thickness direction z, and the element back surface 10b faces the other direction (downwards) in the thickness direction z. The element main surface 10a is an example of a "first element main surface," and the element back surface 10b is an example of a "first element back surface."

[0015] Each of the multiple first semiconductor elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13, as shown in Figures 5 and 15. In the example where each first semiconductor element 1 is a MOSFET, the first electrode 11 is the drain, the second electrode 12 is the source, and the third electrode 13 is the gate. In semiconductor device A1, the second electrode 12 includes a first power pad 121 and two first detection pads 122. The first power pad 121 is used for conducting the main current, which will be described in detail later. Each first detection pad 122 is used to detect a first detection signal corresponding to the conduction state of the second electrode 12. The first detection signal is, for example, a voltage signal corresponding to the source current flowing through the second electrode 12. Each first detection pad 122 is a source sense. As shown in Figures 5 and 15, in each first semiconductor element 1, the first electrode 11 is located on the back surface 10b of the element, and the second electrode 12 (first power pad 121 and two first detection pads 122) and the third electrode 13 are located on the main surface 10a of the element. As shown in Figure 5, on the main surface 10a of the element, the first power pad 121, the two first detection pads 122, and the third electrode 13 are spaced apart from each other. The two first detection pads 122 are located on either side of the third electrode 13 in the first direction x. Unlike the example shown in Figure 5, the second electrode 12 of each first semiconductor element 1 may consist of a single pad instead of a configuration including the first power pad 121 and the two first detection pads 122.

[0016] When a first drive signal (e.g., gate voltage) is input to the third electrode 13 (gate) of each first semiconductor element 1, it switches between a conduction state and an interrupted state in response to this first drive signal. This switching operation between the conduction state and the interrupted state is called switching operation. In the conduction state, current flows from the first electrode 11 (drain) to the second electrode 12 (source), and in the interrupted state, this current does not flow. In other words, each first semiconductor element 1 is controlled on / off between the first electrode 11 (drain) and the second electrode 12 (source) by the first drive signal (e.g., gate voltage) input to the third electrode 13 (gate). The switching frequency of each first semiconductor element 1 depends on the frequency of the first drive signal. Multiple first semiconductor elements 1 are electrically connected to each other by a configuration that will be described in detail later, with each first electrode 11 and each second electrode 12 being electrically connected to each other. As a result, multiple first semiconductor elements 1 are electrically connected in parallel, as shown in Figure 17. The semiconductor device A1 inputs a common first drive signal to a plurality of first semiconductor elements 1 connected in parallel, causing the plurality of first semiconductor elements 1 to operate in parallel.

[0017] Multiple first semiconductor elements 1 are arranged in a first direction x, as shown in Figures 2, 4, and 7-9. Each first semiconductor element 1 is bonded to a support member 4 (conductive plate 41, described later) via a conductive bonding material 19, as shown in Figure 15. The conductive bonding material 19 is, for example, solder, metal paste, or sintered metal.

[0018] As shown in Figures 4 and 7-9, a plurality of first semiconductor elements 1 include a pair of first outer elements 1A and one or more first inner elements 1B. In an example where semiconductor device A1 comprises four first semiconductor elements 1, the plurality of first semiconductor elements 1 include two first inner elements 1B. The pair of first outer elements 1A are elements located at both ends of the plurality of first semiconductor elements 1 in the first direction x. The first inner elements 1B are elements located between the pair of first outer elements 1A in the first direction x.

[0019] Each of the multiple second semiconductor elements 2 has an element main surface 20a and an element back surface 20b, as shown in Figure 16. The element main surface 20a and the element back surface 20b are spaced apart from each other in the thickness direction z. The element main surface 20a faces one direction (upwards) in the thickness direction z, and the element back surface 20b faces the other direction (downwards) in the thickness direction z. The element main surface 20a is an example of a "second element main surface," and the element back surface 20b is an example of a "second element back surface."

[0020] Each of the multiple second semiconductor elements 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23, as shown in Figures 6 and 16. In the example where each second semiconductor element 2 is a MOSFET, the fourth electrode 21 is the drain, the fifth electrode 22 is the source, and the sixth electrode 23 is the gate. In semiconductor device A1, the fifth electrode 22 includes a second power pad 221 and two second detection pads 222. The second power pad 221 is used for conducting the main current, which will be described in detail later. Each second detection pad 222 is used to detect a second detection signal corresponding to the conduction state of the fifth electrode 22. The second detection signal is, for example, a voltage signal corresponding to the source current flowing through the fifth electrode 22. Each second detection pad 222 is a source sense. As shown in Figures 6 and 16, in each second semiconductor element 2, the fourth electrode 21 is located on the back surface 20b of the element, and the fifth electrode 22 (second power pad 221 and two second detection pads 222) and the sixth electrode 23 are located on the main surface 20a of the element. As shown in Figure 6, on the main surface 20a of the element, the second power pad 221, the two second detection pads 222, and the sixth electrode 23 are spaced apart from each other. The two second detection pads 222 are located on either side of the sixth electrode 23 in the first direction x. Unlike the example shown in Figure 6, the fifth electrode 22 of each second semiconductor element 2 may consist of a single pad instead of a configuration including the second power pad 221 and two second detection pads 222.

[0021] When a second drive signal (e.g., gate voltage) is input to the sixth electrode 23 (gate) of each second semiconductor element 2, it switches between a conduction state and an interrupted state in response to this second drive signal. This switching operation between the conduction state and the interrupted state is called switching operation. In the conduction state, current flows from the fourth electrode 21 (drain) to the fifth electrode 22 (source), and in the interrupted state, this current does not flow. In other words, each second semiconductor element 2 is controlled on / off between the fourth electrode 21 (drain) and the fifth electrode 22 (source) by the second drive signal (e.g., gate voltage) input to the sixth electrode 23 (gate). The switching frequency of each second semiconductor element 2 depends on the frequency of the second drive signal. Multiple second semiconductor elements 2 are electrically connected to each other at the fourth electrode 21 and to each other at the fifth electrode 22, according to a configuration that will be described in detail later. As a result, multiple second semiconductor elements 2 are electrically connected in parallel, as shown in Figure 17. In semiconductor device A1, a common second drive signal is input to multiple second semiconductor elements 2 connected in parallel, causing the multiple second semiconductor elements 2 to operate in parallel.

[0022] Multiple second semiconductor elements 2 are arranged in a first direction x, as shown in Figures 2, 4, and 7-9. Each second semiconductor element 2 is bonded to a support member 4 (conductive plate 42, described later) via a conductive bonding material 29, as shown in Figure 16. The conductive bonding material 29 is, for example, solder, metal paste, or sintered metal.

[0023] As shown in Figures 4 and 7-9, the plurality of second semiconductor elements 2 include a pair of second outer elements 2A and one or more second inner elements 2B. In the example where semiconductor device A1 has four second semiconductor elements 2, the plurality of second semiconductor elements 2 include two second inner elements 2B. The pair of second outer elements 2A are elements located at both ends of the plurality of second semiconductor elements 2 in the first direction x. The second inner elements 2B are elements located between the pair of second outer elements 2A in the first direction x.

[0024] The semiconductor device A1 is configured, for example, as a half-bridge type switching circuit. Multiple first semiconductor elements 1 are connected in parallel to each other as described above, forming the upper arm circuit of the semiconductor device A1. Multiple second semiconductor elements 2 are connected in parallel to each other as described above, forming the lower arm circuit of the semiconductor device A1. Each first semiconductor element 1 and each second semiconductor element 2 are connected in series by the electrical connection of the second electrode 12 (source) and the fourth electrode 21 (drain). Each first semiconductor element 1 and each second semiconductor element 2 are connected in series by this series connection. In the illustrated example, the semiconductor device A1 comprises four first semiconductor elements 1 and four second semiconductor elements 2 (see Figure 4). The number of each first semiconductor element 1 and second semiconductor element 2 is not limited to this configuration and can be appropriately changed according to the performance required of the semiconductor device A1.

[0025] Multiple circuit components 3 are arranged on an insulating substrate 50. In semiconductor device A1, each of the multiple circuit components 3 is, for example, a ferrite bead. A ferrite bead is an inductance element that relatively increases the impedance of high-frequency signals (currents) compared to low-frequency signals. Each of the multiple circuit components 3 is surface-mount type in the illustrated example, but may be leaded type instead of surface-mount type. The multiple circuit components 3 include multiple first circuit components 3A and multiple second circuit components 3B, as shown in Figures 4 and 15.

[0026] Multiple first circuit components 3A are connected to a first conductive member. The first conductive member conducts to a control terminal 61 and is electrically interposed between the third electrodes 13 of the multiple first semiconductor elements 1. The first conductive member is a transmission path for the first drive signal. The first conductive member is composed of, for example, a part of the signal wiring section 52 and multiple connecting members 731. The third electrodes 13 of the multiple first semiconductor elements 1 are electrically connected to each other via at least one of the multiple first circuit components 3A. The multiple first circuit components 3A increase the impedance in a first frequency band. The first frequency band is greater than the switching frequency of each first semiconductor element 1. The first frequency band includes, for example, the resonant frequency of a resonant circuit formed by including the parasitic inductance of the first conductive member. In semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each first semiconductor element 1.

[0027] Multiple second circuit components 3B are connected to a second conductive member. The second conductive member conducts to the control terminal 62 and is electrically interposed between the sixth electrodes 23 of the multiple second semiconductor elements 2. The second conductive member is a transmission path for the second drive signal. The second conductive member is composed of, for example, a part of the signal wiring section 53 and multiple connecting members 732. The sixth electrodes 23 of the multiple second semiconductor elements 2 are electrically connected to each other via at least one of the multiple second circuit components 3B. The multiple second circuit components 3B increase the impedance in the second frequency band. The second frequency band is greater than the switching frequency of each second semiconductor element 2. The second frequency band includes, for example, the resonant frequency of a resonant circuit formed including the parasitic inductance of the second conductive member. In semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each second semiconductor element 2.

[0028] In this embodiment, the switching frequency of each first semiconductor element 1 and the switching frequency of each second semiconductor element 2 are the same, and the multiple first circuit components 3A and the multiple second circuit components 3B are of the same type. Therefore, the first frequency band and the second frequency band are the same. Note that even if the switching frequency of each first semiconductor element 1 and the switching frequency of each second semiconductor element 2 are the same, the first frequency band and the second frequency band may be different. Also, if the switching frequency of each first semiconductor element 1 and the switching frequency of each second semiconductor element 2 are different, the first frequency band and the second frequency band may be the same or different.

[0029] As shown in Figures 9 and 14 to 16, the support member 4 supports a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. As shown in Figures 9 and 11 to 16, the support member 4 has a pair of conductive plates 41, 42 and a pair of insulating plates 43, 44.

[0030] Each of the pair of conductive plates 41 and 42 is made of a conductive material, which is, for example, copper or a copper alloy. Alternatively, each conductive plate 41 or 42 may be a laminate in which layers of copper and layers of molybdenum are alternately stacked in the thickness direction z. In this case, both surface layers of each conductive plate 41 or 42 in the thickness direction z are made of copper. Each conductive plate 41 or 42 is, for example, rectangular in plan view, as shown in Figure 9.

[0031] As shown in Figures 9, 14, and 15, the conductive plate 41 mounts and supports a plurality of first semiconductor elements 1. The conductive plate 41 is electrically connected to the first electrode 11 (drain) of each first semiconductor element 1. Each first electrode 11 of the plurality of first semiconductor elements 1 is electrically connected to each other via the conductive plate 41. The conductive plate 41 is, for example, rectangular parallelepiped. The dimension of the conductive plate 41 along the thickness direction z is larger than the dimension of the insulating substrate 50 along the thickness direction z. The conductive plate 41 is an example of a "first mounting section".

[0032] As shown in Figures 9, 14, and 15, the conductive plate 41 has a mounting surface 41a. The mounting surface 41a faces one side (upwards) in the thickness direction z. Each first semiconductor element 1 is bonded to the mounting surface 41a, and the power wiring section 511 is also bonded to it. As shown in Figures 14 and 15, the conductive plate 41 is bonded to the insulating plate 43 via a bonding material 419. The bonding material 419 may be conductive or insulating.

[0033] As shown in Figures 9, 14, and 16, the conductive plate 42 mounts and supports multiple second semiconductor elements 2. The conductive plate 42 is electrically connected to the fourth electrode 21 (drain) of each second semiconductor element 2. Each of the fourth electrodes 21 of the multiple second semiconductor elements 2 is electrically connected to each other via the conductive plate 42. The conductive plate 42 is, for example, rectangular parallelepiped. The dimension of the conductive plate 42 along the thickness direction z is larger than the dimension of the insulating substrate 50 along the thickness direction z. The conductive plate 42 is an example of a "second mounting section".

[0034] As shown in Figures 9, 14, and 16, the conductive plate 42 has a mounting surface 42a. The mounting surface 42a faces one side (upwards) in the thickness direction z. Each second semiconductor element 2 is bonded to the mounting surface 42a, and the power wiring section 514 is also bonded to it. As shown in Figures 14 and 16, the conductive plate 42 is bonded to the insulating plate 44 via a bonding material 429. The bonding material 429 may be conductive or insulating.

[0035] Each of the pair of insulating plates 43 and 44 is made of an insulating material, which is, for example, Al2O3 (aluminum oxide). Each insulating plate 43 and 44 is, for example, rectangular in plan view, as shown in Figure 9. As shown in Figures 9, 14, and 15, insulating plate 43 supports the conductive plate 41. As shown in Figures 9, 14, and 16, insulating plate 44 supports the conductive plate 42. A plating layer may be formed on the surfaces of each insulating plate 43 and 44 to which each conductive plate 41 and 42 are joined. This plating layer is, for example, made of silver or a silver alloy. In the example shown in Figure 10, each insulating plate 43 and 44 has a surface facing the other (downward) direction z of thickness exposed from the resin member 8 (the resin back surface 82 described later), but it may also be covered by the resin member 8.

[0036] The insulating substrate 50 is made of an insulating material, and in one example, it is made of glass epoxy resin. The insulating substrate 50 may be made of ceramics other than glass epoxy resin, such as AlN (aluminum nitride), SiN (silicon nitride), or Al2O3.

[0037] As shown in Figures 11 to 16, the insulating substrate 50 has a main surface 501 and a back surface 502. The main surface 501 and the back surface 502 are spaced apart in the thickness direction z. The main surface 501 faces one direction (up) in the thickness direction z, and the back surface 502 faces the other direction (down) in the thickness direction z. The main surface 501 is an example of a "substrate main surface," and the back surface 502 is an example of a "substrate back surface."

[0038] As shown in Figures 8 and 13 to 16, the insulating substrate 50 includes a plurality of through holes 503, a plurality of through holes 504, a plurality of openings 505, and a plurality of openings 506.

[0039] Each of the multiple through-holes 503 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502, as shown in Figure 13. As shown in Figures 8 and 13, each metal member 59 is inserted into each through-hole 503. As shown in Figures 8 and 13, the inner surface of each through-hole 503 is not in contact with each metal member 59. In contrast to this configuration, the inner surface of each through-hole 503 may be in contact with each metal member 59. In this disclosure, "inserted" means that a member (for example, each metal member 59) is inserted into a through-hole (for example, each through-hole 503), and is not limited to whether a member is in contact with the inner surface of a through-hole or not. An insulating member different from the insulating substrate 50 may be formed in the gap between each metal member 59 and the through-hole 503.

[0040] The through-hole 504 penetrates the insulating substrate 50 from the main surface 501 to the back surface 502 in the thickness direction z. A metal member 58 is inserted into the through-hole 504, as shown in Figure 8. In the illustrated example, the inner surface of the through-hole 504 is in contact with the metal member 58 (see Figure 8), but it is not required to be in contact.

[0041] Each of the multiple openings 505 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502, as shown in Figures 14 and 15. As shown in Figure 8, each opening 505 surrounds each first semiconductor element 1 in a plan view. Each opening 505 is an example of a "first opening".

[0042] Each of the multiple openings 506 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502, as shown in Figures 14 and 16. As shown in Figure 8, each opening 506 surrounds each second semiconductor element 2 in a plan view. Each opening 506 is an example of a "second opening".

[0043] Multiple power wiring sections 511-514 and multiple signal wiring sections 52-56, together with a part of the support member 4 (conductive plates 41, 42), multiple metal members 58, 59, and multiple connecting members 7, form a conductive path in the semiconductor device A1. The multiple power wiring sections 511-514 and multiple signal wiring sections 52-56 are spaced apart from each other. The multiple power wiring sections 511-514 and multiple signal wiring sections 52-56 are made of, for example, copper or a copper alloy. The thickness (dimension z in the thickness direction) and constituent materials of each of the multiple power wiring sections 511-514 and multiple signal wiring sections 52-56 are appropriately changed according to the specifications of the semiconductor device A1 (rated current, allowable current, rated voltage, withstand voltage, internal inductance of the entire device, and size of the device, etc.).

[0044] Multiple power wiring sections 511 to 514 form the main current conduction path in semiconductor device A1. In semiconductor device A1, in a plan view, power wiring section 511 and power wiring section 512 overlap each other, and power wiring section 513 and power wiring section 514 overlap each other in a plan view.

[0045] The power wiring section 511 is formed on the back surface 502 of the insulating substrate 50. As shown in Figures 9, 11, and 13 to 15, the power wiring section 511 is bonded to the mounting surface 41a of the conductive plate 41. The power wiring section 511 is electrically connected to each of the first electrodes 11 (drains) of the plurality of first semiconductor elements 1 via the conductive plate 41.

[0046] The power wiring section 511 includes a plurality of openings 511a and through holes 511b, as shown in Figures 9, 14, and 15. As shown in Figures 14 and 15, each of the multiple openings 511a penetrates the power wiring section 511 in the thickness direction z. As can be seen from Figures 14 and 15, each of the multiple openings 511a overlaps each of the openings 505 of the insulating substrate 50 in a plan view. As shown in Figure 9, each opening 511a surrounds each of the first semiconductor elements 1 in a plan view. The through holes 511b penetrate the power wiring section 511 in the thickness direction z. As shown in Figure 9, a metal member 58 is fitted into the through hole 511b, and the inner surface of the through hole 511b is in contact with the metal member 58. In this disclosure, "fitted" means that a member (for example, a metal member 58) is inserted into a through hole (for example, a through hole 511b), and the member is in contact with the inner surface of the through hole. In other words, the state of being "fitted in" corresponds to the state of being "inserted" where it is in contact with the inner surface of the through-hole.

[0047] The power wiring section 512 is formed on the main surface 501 of the insulating substrate 50. As can be seen from Figures 4 and 6, the power wiring section 512 is electrically connected to the fifth electrode 22 (source) of each second semiconductor element 2 via a plurality of connecting members 72. In a plan view, the power wiring section 512 is formed so as to avoid each of the plurality of first semiconductor elements 1.

[0048] The power wiring section 513 is formed on the main surface 501 of the insulating substrate 50. In a plan view, the power wiring section 513 is located on one side of the second direction y (the lower side in Figure 6) compared to the power wiring section 512. As can be seen from Figures 4 and 5, the power wiring section 513 is electrically connected to the second electrode 12 (source) of each first semiconductor element 1 via a plurality of connecting members 71. Furthermore, the power wiring section 513 is electrically connected to the fourth electrode 21 (drain) of each second semiconductor element 2 via the power wiring section 514 and each metal member 59, as will be described in detail later. In a plan view, the power wiring section 513 is formed so as to avoid each of the plurality of second semiconductor elements 2.

[0049] As shown in Figures 7 and 13, the power wiring section 513 includes a plurality of through holes 513a. Each of the plurality of through holes 513a penetrates the power wiring section 513 in the thickness direction z, as shown in Figure 13. As shown in Figures 7 and 13, one of a plurality of metal members 59 is fitted into each through hole 513a, and the inner surface of each through hole 513a is in contact with each metal member 59. In the illustrated example, each through hole 513a is circular in plan view (see Figure 7), but this can be appropriately changed according to the shape of each metal member 59.

[0050] The power wiring section 514 is formed on the back surface 502 of the insulating substrate 50. As shown in Figures 9, 12 to 14, and 16, the power wiring section 514 is bonded to the mounting surface 42a of the conductive plate 42. The power wiring section 514 is electrically connected to the fourth electrode 21 (drain) of each of the multiple second semiconductor elements 2 via the conductive plate 42. Furthermore, the power wiring section 514 is electrically connected to the second electrode 12 (source) of each first semiconductor element 1 via the power wiring section 513 and each metal member 59, as will be described in detail later.

[0051] As shown in Figures 9, 13, 14, and 16, the power wiring section 514 includes a plurality of openings 514a and a plurality of through holes 514b. As shown in Figures 14 and 16, each of the multiple openings 514a penetrates the power wiring section 514 in the thickness direction z. As can be seen from Figures 14 and 16, each of the multiple openings 514a overlaps with each opening 506 of the insulating substrate 50 in a plan view. As shown in Figure 9, each opening 514a surrounds each second semiconductor element 2 in a plan view. As shown in Figure 13, each of the multiple through holes 514b penetrates the power wiring section 514 in the thickness direction z. As can be seen from Figure 13, each of the through holes 514b overlaps with each through hole 513a of the power wiring section 513 in a plan view. Each of the multiple metal members 59 is fitted into each of the multiple through holes 514b.

[0052] The semiconductor device A1 comprises a first power terminal section 5P, a second power terminal section 5N, and two third power terminal sections 5O. The first power terminal section 5P and the second power terminal section 5N are connected, for example, to an external DC power supply, and a power supply voltage (DC voltage) is applied to them. In the semiconductor device A1, the first power terminal section 5P is a P terminal connected to the positive terminal of the DC power supply, and the second power terminal section 5N is an N terminal connected to the negative terminal of the DC power supply. The DC voltage applied to the first power terminal section 5P and the second power terminal section 5N is converted to an AC voltage by the switching operations of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2. The converted voltage (AC voltage) is output from the two third power terminal sections 5O, respectively. The main current in the semiconductor device A1 is generated by this power supply voltage and the converted voltage.

[0053] As shown in Figures 4, 7, and 9-11, the first power terminal section 5P is part of the power wiring section 511. Therefore, the power wiring section 511 includes the first power terminal section 5P. As shown in Figures 4, 7, and 9-11, the first power terminal section 5P is located at one end of the power wiring section 511 in the first direction x (the right side in Figure 4). Since the first power terminal section 5P is part of the power wiring section 511, it is electrically connected to each of the first electrodes 11 (drains) of the multiple first semiconductor elements 1.

[0054] As shown in Figures 2 to 4, 7 and 11, the second power terminal section 5N is part of the power wiring section 512. Therefore, the power wiring section 512 includes the second power terminal section 5N. As shown in Figures 2 to 4, 7 and 11, the second power terminal section 5N is located at one end of the power wiring section 512 in the first direction x (the right side in Figure 4). Since the second power terminal section 5N is part of the power wiring section 512, it is electrically connected to the fifth electrode 22 (source) of each second semiconductor element 2.

[0055] One of the two third power terminals 5O is part of the power wiring section 513, as shown in Figures 2-4, 7, and 12. Therefore, the power wiring section 513 includes one of the two third power terminals 5O. As shown in Figures 2-4, 7, and 12, one of the two third power terminals 5O is located at one end of the power wiring section 513 in the first direction x (right side in Figure 4). The other of the two third power terminals 5O is part of the power wiring section 514, as shown in Figures 4, 7, 9, 10, and 12. Therefore, the power wiring section 514 includes the other of the two third power terminals 5O. As shown in Figures 4, 7, 9, 10, and 12, the other of the two third power terminals 5O is located at one end of the power wiring section 514 in the first direction x (right side in Figure 4). Since each of the two third power terminals 5O is part of either the power wiring section 513 or the power wiring section 514, they are electrically connected to the second electrode 12 (source) of each first semiconductor element 1 and the fourth electrode 21 (drain) of each second semiconductor element 2.

[0056] The first power terminal portion 5P, the second power terminal portion 5N, and the two third power terminal portions 5O are spaced apart from each other and are exposed from the resin member 8, as shown in Figures 1, 3, and 10 to 12. The surfaces of the first power terminal portion 5P, the second power terminal portion 5N, and the two third power terminal portions 5O may or may not be plated.

[0057] As can be seen from Figures 7, 9, and 11, the first power terminal 5P and the second power terminal 5N overlap each other in a plan view. As can be seen from Figures 7, 9, and 12, the two third power terminals 5O overlap each other in a plan view. In the illustrated example, the semiconductor device A1 includes two third power terminals 5O, but it may also include only one of the two third power terminals 5O, contrary to this configuration.

[0058] Multiple signal wiring sections 52 to 56 form conductive paths for control signals in semiconductor device A1. Each of the multiple signal wiring sections 52 to 56 is formed on the main surface 501 of the insulating substrate 50, as shown in Figures 4 and 7.

[0059] As shown in Figures 2 and 4, the signal wiring section 52 has a control terminal 61 electrically connected to it. The signal wiring section 52 is electrically connected to each of the third electrodes 13 of the multiple first semiconductor elements 1. Together with the multiple connecting members 731, the signal wiring section 52 forms a transmission path for transmitting the first drive signal. The signal wiring section 52 is an example of a "first signal wiring section". As shown in Figures 4, 7 and 11, the signal wiring section 52 includes a joint 521, multiple individual parts 522, and an extension 523.

[0060] As shown in Figures 4 and 11, the control terminal 61 is joined to the joint 521. As shown in Figures 4 and 7, in a plan view, the joint 521 is located at the end of the insulating substrate 50 on the other side in the first direction x (left side in Figure 4). The joint 521 is electrically connected to a plurality of individual parts 522. The joint 521 is an example of a "first joint".

[0061] As shown in Figures 4, 7, and 11, the multiple individual parts 522 are arranged along a first direction x and spaced apart from one another. Each of the multiple individual parts 522 is a strip-shaped extension in the first direction x in a plan view, as shown in Figures 4 and 7. As shown in Figures 4, 7, and 11, each of the multiple individual parts 522 is joined to one of the multiple connecting members 731 and to one of the multiple first circuit components 3A. Two adjacent individual parts 522 in the first direction x are electrically connected via the first circuit components 3A. As shown in Figures 4 and 7, in the second direction y, the multiple individual parts 522 are located on the opposite side (upper side in Figure 4) from the side where the multiple second semiconductor elements 2 are located relative to the multiple first semiconductor elements 1. The multiple individual parts 522 are located on one side of the first direction x (right side in Figure 4) from the joining part 521. Each individual part 522 is an example of a "first individual part".

[0062] The extension 523 extends from the joint 521 to one of the multiple individual parts 522. The extension 523 electrically connects the joint 521 to one of the multiple individual parts 522. In the examples shown in Figures 4 and 7, the extension 523 is connected to the individual part 522 that is closest to the joint 521 in the first direction x. In the example shown in Figure 4, the individual part 522 connected to the extension 523 is located on the other side of the first direction x (left side in Figure 4) among the multiple individual parts 522.

[0063] As shown in Figures 2 and 4, the signal wiring section 53 has a control terminal 62 electrically connected to it. The signal wiring section 53 is electrically connected to each of the sixth electrodes 23 of the multiple second semiconductor elements 2. Together with the multiple connecting members 732, the signal wiring section 53 forms a transmission path for transmitting the second drive signal. Multiple second circuit components 3B are connected to the signal wiring section 53. The signal wiring section 53 is an example of a "second signal wiring section". As shown in Figures 4, 7 and 12, the signal wiring section 53 includes a connecting section 531, multiple individual sections 532, and an extension section 533.

[0064] As shown in Figure 4, the control terminal 61 is joined to the joint 531. As shown in Figures 4 and 7, in a plan view, the joint 531 is located at the end of the insulating substrate 50 in the first direction x other side (left side in Figure 4). The joint 531 is electrically connected to a plurality of individual parts 532. The joint 531 is an example of a "second joint".

[0065] The multiple individual parts 532 are arranged along the first direction x and spaced apart from one another, as shown in Figures 4, 7, and 12. Each of the multiple individual parts 532 is a strip-shaped extension in the first direction x in a plan view, as shown in Figures 4 and 7. As shown in Figures 4, 7, and 12, each of the multiple individual parts 532 is joined to one of the multiple connecting members 732 and to one of the multiple second circuit components 3B. Two adjacent individual parts 532 in the first direction x are electrically connected via the second circuit components 3B. As shown in Figures 4 and 7, the multiple individual parts 532 are located in the second direction y on the opposite side (lower side in Figure 4) from the side where the multiple first semiconductor elements 1 are located relative to the multiple second semiconductor elements 2. The multiple individual parts 532 are located on one side of the first direction x (right side in Figure 4) from the joining part 531. Each individual part 532 is an example of a "second individual part".

[0066] The extension 533 extends from the joint 531 to one of the multiple individual parts 532. The extension 533 electrically connects the joint 531 to one of the multiple individual parts 532. In the examples shown in Figures 4 and 7, the extension 533 is connected to the individual part 532 that is closest to the joint 531 in the first direction x. In the example shown in Figure 4, the individual part 532 connected to the extension 533 is located on the far other side of the first direction x (left side in Figure 4) among the multiple individual parts 532. In the examples shown in Figures 4 and 7, most of the extension 533 is a strip extending in the second direction y in a plan view.

[0067] As shown in Figures 2 and 4, the signal wiring section 54 has a detection terminal 63 electrically connected to it. The signal wiring section 54 is electrically connected to each of the second electrodes 12 of the multiple first semiconductor elements 1. Together with the multiple connecting members 741, the signal wiring section 54 forms a transmission path for transmitting the first detection signal. As shown in Figures 4 and 7, the signal wiring section 54 includes a joint 541, a strip-shaped section 542, multiple pad sections 543, and an extension 544. In semiconductor device A1, the joint 541, the strip-shaped section 542, the multiple pad sections 543, and the extension 544 are integrally formed.

[0068] As shown in Figure 4, the detection terminal 63 is joined to the joint 541. The joint 541 is the end of the insulating substrate 50 in a plan view, and is located at the other end in the first direction x (the left side in Figure 4).

[0069] As shown in Figures 4 and 7, the strip-shaped portion 542 extends in the first direction x in a plan view. The strip-shaped portion 542 has its longitudinal direction in the first direction x. In the example shown in Figures 4 and 7, the strip-shaped portion 542 is located on one side of the multiple first semiconductor elements 1 in the second direction y (upper side in Figure 4) in a plan view. Also, the strip-shaped portion 542 is sandwiched in the second direction y between the multiple first semiconductor elements 1 and the multiple individual parts 522 in a plan view. The strip-shaped portion 542 is located on one side of the junction portion 541 in the first direction x (right side in Figure 4).

[0070] As shown in Figures 4, 5, and 7, the multiple pad portions 543 are formed between each of two adjacent first semiconductor elements 1 in a plan view in the first direction x. In the example shown in Figure 4, one of the multiple pad portions 543 is positioned between one of a pair of first outer elements 1A and its adjacent first inner element 1B, between the other of a pair of first outer elements 1A and its adjacent first inner element 1B, and between two first inner elements 1B. Each of the multiple pad portions 543 is joined to two connecting members 741, as shown in Figures 4 and 5. Each of the multiple pad portions 543 is connected to a strip-shaped portion 542, and in this embodiment, it is connected to the edge of the strip-shaped portion 542 on the side where the multiple first semiconductor elements 1 are located in the second direction y. Each of the multiple pad portions 543 overlaps the strip-shaped portion 542 when viewed in the second direction y. Unlike the illustrated example, each pad portion 543 may be separated from the strip portion 542. In this case, the pad portions 543 and the strip portion 542 can be electrically connected, for example, by a bonding wire.

[0071] As shown in Figures 4 and 7, the extension portion 544 extends from the joint portion 541 to the strip portion 542. The extension portion 544 electrically connects the joint portion 541 and the strip portion 542.

[0072] As shown in Figures 2 and 4, the signal wiring section 55 has a detection terminal 64 electrically connected to it. The signal wiring section 55 is electrically connected to each of the second electrodes 12 of the multiple second semiconductor elements 2. Together with the multiple connecting members 742, the signal wiring section 55 forms a transmission path for transmitting the second detection signal. As shown in Figures 4 and 7, the signal wiring section 55 includes a joint 551, a strip-shaped section 552, multiple pad sections 553, and an extension 554. In semiconductor device A1, the joint 551, the strip-shaped section 552, the multiple pad sections 553, and the extension 554 are integrally formed.

[0073] As shown in Figure 4, the detection terminal 64 is joined to the joint 551. The joint 551 is the end of the insulating substrate 50 in a plan view, and is located at the other end in the first direction x (the left side in Figure 4).

[0074] As shown in Figures 4 and 7, the strip-shaped portion 552 extends in the first direction x in a plan view. The strip-shaped portion 552 has its longitudinal direction in the first direction x. In the example shown in Figures 4 and 7, the strip-shaped portion 552 is located on the other side of the second direction y (the lower side in Figure 4) of the plurality of second semiconductor elements 2 in a plan view. Also, in a plan view, the strip-shaped portion 552 is sandwiched in the second direction y between the plurality of second semiconductor elements 2 and the plurality of individual portions 532. The strip-shaped portion 552 is located on one side of the first direction x (the right side in Figure 4) of the junction portion 551. In a plan view, the strip-shaped portion 552 is parallel (or approximately parallel) to the strip-shaped portion 542.

[0075] As shown in Figures 4, 6, and 7, the multiple pad portions 553 are formed between each of two adjacent second semiconductor elements 2 in a plan view in the first direction x. In the example shown in Figures 4 and 7, one of the multiple pad portions 553 is positioned between one of a pair of second outer elements 2A and its adjacent second inner element 2B, between the other of a pair of second outer elements 2A and its adjacent second inner element 2B, and between two second inner elements 2B. Each of the multiple pad portions 553 is joined to two connecting members 742, as shown in Figures 4 and 6. Each of the multiple pad portions 553 is connected to a strip-shaped portion 552, and in this embodiment, it is connected to the edge of the strip-shaped portion 542 on the side where the multiple second semiconductor elements 2 are located in the second direction y. The multiple pad portions 553 overlap the strip-shaped portion 552 when viewed in the second direction y. Unlike the illustrated example, each pad portion 553 may be separated from the strip portion 552. In this case, the pad portions 553 and the strip portion 552 can be electrically connected, for example, by a bonding wire.

[0076] As shown in Figures 4 and 7, the extension 554 extends from the joint 551 to the strip-shaped portion 552. The extension 554 electrically connects the joint 551 and the strip-shaped portion 552. In the examples shown in Figures 4 and 7, most of the extension 554 is strip-shaped and extends in the second direction y.

[0077] As shown in Figure 2, the signal wiring section 56 has a detection terminal 65 electrically connected to it. The signal wiring section 56 is electrically connected to each of the first electrodes 11 of the multiple first semiconductor elements 1. As shown in Figure 7, a through hole 561 is formed in the signal wiring section 56. The through hole 561 penetrates the signal wiring section 56 in the thickness direction z. As shown in Figure 7, a metal member 58 is fitted into the through hole 561.

[0078] Each of the multiple metal members 59 penetrates the insulating substrate 50 in the thickness direction z, as shown in Figure 11, and connects the power wiring section 513 and the power wiring section 514. Each metal member 59 is, for example, columnar. In the illustrated example, the plan view shape of each metal member 59 is circular (see Figures 5 to 8), but the plan view shape of each metal member 59 may be elliptical or polygonal, not circular. The constituent material of each metal member 59 is, for example, copper or a copper alloy.

[0079] As shown in Figures 6 to 8 and Figure 11, each of the multiple metal members 59 is fitted into each through-hole 513a of the power wiring section 513 and each through-hole 514b of the power wiring section 514, and is also inserted into each through-hole 503 of the insulating substrate 50. Each metal member 59 is in contact with the inner surface of each through-hole 513a and each through-hole 514b. Each metal member 59 is supported by being fitted into each through-hole 513a and each through-hole 514b. If there are gaps between each metal member 59 and the inner surface of each through-hole 513a, and between each metal member 59 and the inner surface of each through-hole 514b, solder can be poured into these gaps. This fills the gaps with solder, fixing each metal member 59 to the power wiring section 513 and the power wiring section 514. Furthermore, when solder is poured in, the gaps between each metal component 59 and the inner surface of the through-hole 503 in the insulating substrate 50 may also be filled with solder.

[0080] The metal member 58 penetrates the insulating substrate 50 in the thickness direction z, and provides electrical connection between the power wiring section 511 and the signal wiring section 56. The metal member 58 is, for example, columnar. In the illustrated example, the plan view shape of the metal member 58 is circular (see Figures 6 to 8), but the plan view shape of the metal member 58 may be elliptical or polygonal, not circular. The constituent material of the metal member 58 is, for example, copper or a copper alloy.

[0081] As shown in Figures 7 to 9, the metal member 58 is fitted into the through hole 561 of the signal wiring section 56 and the through hole 511b of the power wiring section 511, and is also inserted into the through hole 504 of the insulating substrate 50. As shown in Figures 7 to 9, the metal member 58 is in contact with the inner surfaces of the through hole 561, the through hole 511b, and the through hole 504, respectively. If a gap occurs between the metal member 58 and the inner surfaces of each through hole 561, 511b, and 504, solder can be poured into this gap. This fills the gap with solder, fixing the metal member 58 to the power wiring section 511, the signal wiring section 56, and the insulating substrate 50.

[0082] In semiconductor device A1, as shown in Figures 14 and 15, each first semiconductor element 1 is housed in a recess formed by the openings 505 of the insulating substrate 50 and the openings 511a of the power wiring section 511, and the conductive plate 41. In the illustrated example, the main surface 10a of each first semiconductor element 1, when viewed in a direction perpendicular to the thickness direction z (for example, the second direction y), overlaps either the insulating substrate 50 or the power wiring section 511, but may also overlap the power wiring section 512. In either case, each first semiconductor element 1 does not protrude above the power wiring section 512 in the thickness direction z. Similarly, as shown in Figures 14 and 16, each second semiconductor element 2 is housed in a recess formed by the openings 506 of the insulating substrate 50 and the openings 514a of the power wiring section 514, and the conductive plate 42. In the illustrated example, the main surface 20a of each second semiconductor element 2 overlaps either the insulating substrate 50 or the power wiring section 514 when viewed in a direction perpendicular to the thickness direction z (for example, the second direction y), but it may also overlap the power wiring section 513. In either case, each second semiconductor element 2 does not protrude above the power wiring section 513 in the thickness direction z.

[0083] Each of the control terminals 61, 62 and detection terminals 63-65 is made of a conductive material. This conductive material is, for example, copper or a copper alloy. Each of the control terminals 61, 62 and detection terminals 63-65 is formed by cutting and bending a plate-shaped member. As shown in Figures 1-4 and Figure 10, each of the control terminals 61, 62 and detection terminals 63-65 is located on the other side of the first direction x (left side in Figure 4) from the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2, and is located on the opposite side of the first power terminal section 5P, the second power terminal section 5N, and the two third power terminal sections 5O from the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2.

[0084] The control terminal 61 is conductive to the third electrode 13 (gate) of each first semiconductor element 1. The control terminal 61 receives a first drive signal that controls the switching operation of each first semiconductor element 1. As shown in Figures 1 to 4, 10 and 11, the control terminal 61 includes a portion covered by the resin member 8 and a portion exposed from the resin member 8. Of the control terminal 61, the portion covered by the resin member 8 is connected to the joint 521 of the signal wiring section 52. Of the control terminal 61, the portion exposed from the resin member 8 is connected to an external control device (for example, a gate driver), and the first drive signal (gate voltage) is input from the control device. The control terminal 61 is an example of a "first control terminal".

[0085] The control terminal 62 is electrically connected to the sixth electrode 23 (gate) of each second semiconductor element 2. The control terminal 62 receives a second drive signal that controls the switching operation of each second semiconductor element 2. As shown in Figures 1 to 4 and Figure 10, the control terminal 62 includes a portion covered by the resin member 8 and a portion exposed from the resin member 8. The portion of the control terminal 62 covered by the resin member 8 is connected to the joint 531 of the signal wiring section 53. The control terminal 62 is an example of a "second control terminal".

[0086] The detection terminal 63 is conductive to the second electrode 12 (source) of each first semiconductor element 1. The detection terminal 63 outputs a first detection signal indicating the conductivity state of each first semiconductor element 1. In semiconductor device A1, the voltage applied to the second electrode 12 of each first semiconductor element 1 (voltage corresponding to the source current) is output from the detection terminal 63 as the first detection signal. As shown in Figures 1 to 4 and Figure 10, the detection terminal 63 includes a portion covered by the resin member 8 and a portion exposed from the resin member 8. Of the detection terminal 63, the portion covered by the resin member 8 is connected to the joint 541 of the signal wiring section 54. Of the detection terminal 63, the portion exposed from the resin member 8 is connected to the external control device, which outputs the first detection signal of the control device.

[0087] The detection terminal 64 is conductive to the fifth electrode 22 (source) of each second semiconductor element 2. The detection terminal 64 outputs a second detection signal indicating the conductivity state of each second semiconductor element 2. In semiconductor device A1, the voltage applied to the fifth electrode 22 of each second semiconductor element 2 (voltage corresponding to the source current) is output from the detection terminal 64 as the second detection signal. As shown in Figures 1 to 4 and Figure 10, the detection terminal 64 includes a portion covered by the resin member 8 and a portion exposed from the resin member 8. Of the detection terminal 64, the portion pressed by the resin member 8 is connected to the joint 551 of the signal wiring section 55. Of the detection terminal 64, the portion exposed from the resin member 8 is connected to the external control device, and outputs the second detection signal to the control device.

[0088] The detection terminal 65 is conductive to the first electrode 11 (drain) of each first semiconductor element 1. The detection terminal 65 outputs a voltage (voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1. As shown in Figures 1 to 4 and Figure 10, the detection terminal 65 includes a portion covered by the resin member 8 and a portion exposed from the resin member 8. Of the detection terminal 65, the portion covered by the resin member 8 is joined to the signal wiring section 56. Of the detection terminal 65, the portion exposed from the resin member 8 is connected to the external control device, which outputs the voltage (voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1 to the control device.

[0089] Each of the multiple connecting members 7 provides electrical conductivity between two portions that are spaced apart from each other. As described above, the multiple connecting members 7 include multiple connecting members 71, 72, 731, 732, 741, and 742. Each of the multiple connecting members 7 is, for example, a bonding wire. Some of the multiple connecting members 7 (for example, multiple connecting members 71 and 72) may be metal plates instead of bonding wires. Each component material of the multiple connecting members 7 may be gold, aluminum, or copper.

[0090] As shown in Figures 4 and 5, each of the multiple connecting members 71 is joined to the first power pad 121 of each second electrode 12 (source) of the multiple first semiconductor elements 1 and to the power wiring section 513, thereby creating electrical conductivity between them. The main current in the semiconductor device A1 flows through the multiple connecting members 71. Unlike the illustrated example, some of the connecting members 71 may be joined to the upper surface of the metal member 59 instead of the power wiring section 513.

[0091] As shown in Figures 4 and 6, each of the multiple connecting members 72 is joined to the second power pad 221 of each fifth electrode 22 (source) of the multiple second semiconductor elements 2 and to the power wiring section 512, thereby creating electrical conductivity between them. The main current in the semiconductor device A1 flows through the multiple connecting members 72.

[0092] As shown in Figures 4 and 5, each of the multiple connecting members 731 is joined to the third electrode 13 (gate) of each of the multiple first semiconductor elements 1 and to each individual part 522 of the signal wiring section 52, thereby making them electrically connected. The multiple connecting members 731 transmit the first drive signal together with the signal wiring section 52. Each connecting member 731 is part of the first conductive member. In two of the multiple first semiconductor elements 1, the first conductive member is formed by a connecting member 731 connected to one first semiconductor element 1, a connecting member 731 connected to the other first semiconductor element 1, and the parts of the signal wiring section 52 to which these connecting members 731 are connected. Each connecting member 731 is an example of a "first connecting member".

[0093] As shown in Figures 4 and 6, each of the multiple connecting members 732 is joined to the sixth electrode 23 (gate) of each of the multiple second semiconductor elements 2 and to each individual part 532 of the signal wiring section 53, thereby making them electrically connected. The multiple connecting members 732, together with the signal wiring section 53, transmit the second drive signal. Each connecting member 732 is part of the second conductive member. In two of the multiple second semiconductor elements 2, the second conductive member is formed by a connecting member 732 connected to one second semiconductor element 2, a connecting member 732 connected to the other second semiconductor element 2, and the parts of the signal wiring section 53 to which these connecting members 732 are connected. Each connecting member 732 is an example of a "second connecting member".

[0094] In semiconductor device A1, as shown in Figures 4 and 5, the direction in which each connecting member 731 extends in a plan view is such that the inclination with respect to the arrangement direction of the multiple first semiconductor elements 1 (first direction x) is greater than the inclination with respect to the direction perpendicular to the arrangement direction and the thickness direction z (second direction y). Also, as shown in Figures 4 and 6, the direction in which each connecting member 732 extends in a plan view is such that the inclination with respect to the arrangement direction of the multiple second semiconductor elements 2 (first direction x) is greater than the inclination with respect to the direction perpendicular to the arrangement direction and the thickness direction z (second direction y).

[0095] As shown in Figures 4 and 5, each of the multiple connecting members 741 is joined to each pad portion 543 (signal wiring portion 53) and to the first semiconductor element 1 adjacent to the pad portion 543 in a plan view, thereby making them electrically connected. As shown in Figure 5, each connecting member 741 is joined to the first detection pad 122 of the second electrode 12 (source) of each first semiconductor element 1. As shown in Figures 4 and 5, a connecting member 741 joined to the first detection pad 122 on one side of the first direction x of each first semiconductor element 1 is joined to the pad portion 543 adjacent to the first side of the first semiconductor element 1 in a plan view. Also, a connecting member 741 joined to the first detection pad 122 on the other side of the first direction x of each first semiconductor element 1 is joined to the pad portion 543 adjacent to the other side of the first direction x of the first semiconductor element 1 in a plan view. As shown in Figures 4 and 5, in each pair of first outer elements 1A, a connecting member 741 is bonded to one of the two first detection pads 122, and in each of the multiple first inner elements 1B, a connecting member 741 is bonded to both of the two first detection pads 122. The multiple connecting members 741 transmit the first detection signal. In the example where the second electrode 12 of each first semiconductor element 1 is composed of one pad, each connecting member 741 is bonded to the pad together with the connecting member 71.

[0096] As shown in Figures 4 and 6, each of the multiple connecting members 742 is joined to each pad portion 553 (signal wiring portion 54) and to the second semiconductor element 2 adjacent to the pad portion 553 in a plan view, thereby making them electrically connected. As shown in Figure 6, each connecting member 742 is joined to the second detection pad 222 of the fifth electrode 22 (source) of each second semiconductor element 2. As shown in Figures 4 and 6, a connecting member 742 joined to the second detection pad 222 on one side of the first direction x of each second semiconductor element 2 is joined to the pad portion 553 adjacent to that side of the second semiconductor element 2 in a plan view. Also, a connecting member 742 joined to the second detection pad 222 on the other side of the first direction x of each second semiconductor element 2 is joined to the pad portion 553 adjacent to that side of the second semiconductor element 2 in a plan view. As shown in Figures 4 and 6, in each pair of second outer elements 2A, the connecting member 742 is bonded to one of the two second detection pads 222, and in each of the multiple second inner elements 2B, the connecting member 742 is bonded to both of the two second detection pads 222. In the example where the fifth electrode 22 of each second semiconductor element 2 is composed of one pad, each connecting member 742 is bonded to the pad together with the connecting member 72.

[0097] In semiconductor device A1, as shown in Figures 4 and 5, the direction in which each connecting member 741 extends in a plan view is such that the inclination with respect to the arrangement direction of the multiple first semiconductor elements 1 (first direction x) is smaller than the inclination with respect to the direction perpendicular to the arrangement direction and the thickness direction z (second direction y). Also, as shown in Figures 4 and 6, the direction in which each connecting member 742 extends in a plan view is such that the inclination with respect to the arrangement direction of the multiple second semiconductor elements 2 (first direction x) is smaller than the inclination with respect to the direction perpendicular to the arrangement direction and the thickness direction z (second direction y).

[0098] The wire diameters of the multiple connecting members 71, 72, 731, 732, 741, and 742 are not particularly limited, but in semiconductor device A1, these wire diameters have the following relationship: The wire diameters of the multiple connecting members 71 and 72 are larger than the wire diameters of the multiple connecting members 731, 732, 741, and 742. This is because the main current mentioned above flows through the multiple connecting members 71 and 72. Also, the wire diameters of the multiple connecting members 741 and 742 are larger than the wire diameters of the multiple connecting members 731 and 732.

[0099] The resin member 8 is a encapsulant that protects a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, and a plurality of circuit components 3. The resin member 8 is made of an insulating resin material. This resin material is, for example, black epoxy resin. In the semiconductor device A1, the resin member 8 covers a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a plurality of circuit components 3, a part of the support member 4, the insulating substrate 50, a part of each of the plurality of power wiring sections 511 to 514, a plurality of signal wiring sections 52 to 56, a part of each of the plurality of control terminals 61 and 62, a part of each of the plurality of detection terminals 63 to 65, and a plurality of connecting members 7. As shown in Figures 3 and 10, the resin member 8 is rectangular in shape in plan view.

[0100] As shown in Figures 1, 3, 4, and 10-14, the resin member 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831-834. As shown in Figures 10-14, the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces one direction (upwards) in the thickness direction z, and the resin back surface 82 faces the other direction (downwards) in the thickness direction z. As shown in Figures 10-14, each of the plurality of resin side surfaces 831-834 is sandwiched between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is connected to the resin main surface 81 and the resin back surface 82, respectively. As shown in Figures 3, 4, and 10-12, the resin side surfaces 831 and 832 are spaced apart in a first direction x. The resin side surface 831 faces one direction in the first direction x, and the resin side surface 832 faces the other direction in the first direction x. A pair of control terminals 61, 62 and a plurality of detection terminals 63-65 protrude from the resin side surface 831, as shown in Figures 3, 4, and 10. As shown in Figures 3, 4, 10, 13, and 14, the resin side surfaces 833 and 834 are spaced apart in the second direction y. Resin side surface 833 faces one direction in the second direction y, and resin side surface 834 faces the other direction in the second direction y.

[0101] As shown in Figures 3, 4, and 10-12, the resin member 8 has notches formed on the resin side surface 832, specifically on the main resin surface 81 and the resin back surface 82. These notches expose the first power terminal portion 5P, the second power terminal portion 5N, and the pair of third power terminal portions 5O from the resin member 8, as shown in Figures 3, 4, and 10-12.

[0102] The operation and effects of semiconductor device A1 are as follows:

[0103] The semiconductor device A1 includes a plurality of first circuit components 3A that increase the impedance in a first frequency band, and the third electrodes 13 of the plurality of first semiconductor elements 1 are electrically connected to each other via at least one of the plurality of first circuit components 3A. The first frequency band includes the resonant frequency of a resonant circuit formed including the parasitic inductance of a first conductive member electrically interposed between the third electrodes 13 of the plurality of first semiconductor elements 1. In the semiconductor device A1, the first conductive member is, for example, a part of the signal wiring section 52 and each connecting member 731. When a plurality of first semiconductor elements 1 are connected in parallel, a loop path is formed passing through each first electrode 11 (drain) and each third electrode 13 (gate) of the plurality of first semiconductor elements 1. In this loop path, a resonant circuit including the parasitic inductance of the first conductive member is formed, and the impedance of the loop path at the resonant frequency of this resonant circuit is low. The resonance phenomenon that occurs when a plurality of first semiconductor elements 1 are operated in parallel tends to occur more easily when the impedance of the loop path is low. Therefore, in semiconductor device A1, multiple first circuit components 3A are connected to the first conductive member, and the third electrodes 13 of multiple first semiconductor elements 1 are electrically connected to each other via at least one of the multiple first circuit components 3A. This makes it possible to increase the impedance in the first frequency band in the aforementioned loop path. Thus, semiconductor device A1 can suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. The same is true when multiple second semiconductor elements 2 are operated in parallel. In other words, semiconductor device A1 is equipped with multiple second circuit components 3B that increase the impedance in the second frequency band, and the sixth electrodes 23 of multiple second semiconductor elements 2 are electrically connected to each other via at least one of the multiple second circuit components 3B. This makes it possible for semiconductor device A1 to suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0104] In semiconductor device A1, each first circuit component 3A is an inductance element. However, even if each first circuit component 3A is a resistor instead of an inductance element, the impedance in the first frequency band can still be increased. In other words, semiconductor device A1 may use resistors as each first circuit component 3A to suppress resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel. However, if resistors are used as each first circuit component 3A, the impedance at frequencies other than the first frequency band also increases, raising concerns about a decrease in the switching speed of each first semiconductor element 1 and an increase in the switching loss of each first semiconductor element 1. In contrast, if each first circuit component 3A is an inductance element, it is possible to suppress the increase in impedance at frequencies other than the first frequency band. As a result, semiconductor device A1 can suppress the increase in impedance at the switching frequency of each first semiconductor element 1, thereby suppressing, for example, a decrease in the switching speed of each first semiconductor element 1 and an increase in the switching loss of each first semiconductor element 1. The same applies to each second circuit component 3B. In other words, because each second circuit component 3B in semiconductor device A1 is an inductance element, the increase in impedance at frequencies other than the second frequency band can be suppressed compared to the case where each second circuit component 3B is a resistor. As a result, semiconductor device A1 can suppress the increase in impedance at the switching frequency of each first semiconductor element 1, thereby suppressing, for example, a decrease in the switching speed of each second semiconductor element 2 and an increase in the switching loss of each second semiconductor element 2.

[0105] In semiconductor device A1, each first circuit component 3A is a ferrite bead. However, even if each first circuit component 3A is not a ferrite bead but another inductance element, such as a coil (a wound-type inductance element), the impedance in the first frequency band can still be increased. In other words, semiconductor device A1 may use inductance elements other than ferrite beads as each first circuit component 3A to suppress resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel. However, while the reactance component of impedance is the primary function of a typical inductance element (coil), the resistance component of a ferrite bead is the primary function of impedance in the high-frequency region. Since the reactance component does not involve energy loss, while the resistance component does, ferrite beads have a higher ability to absorb high-frequency vibrations and a higher high-frequency vibration suppression effect compared to typical inductance elements. Furthermore, by changing the type of ferrite bead used for each first circuit component 3A, the frequency characteristics and Q value of each first circuit component 3A can be easily adjusted in response to variations in the performance of each first semiconductor element 1 and the unevenness of the current (drain current) of each first semiconductor element 1. Therefore, semiconductor device A1 is preferable in suppressing resonance phenomena by using ferrite beads as the first circuit component 3A compared to cases where other inductance elements are used. The same applies to each second circuit component 3B. In other words, semiconductor device A1 is preferable in suppressing resonance phenomena by using ferrite beads for each second circuit component 3B compared to cases where other inductance elements are used.

[0106] In semiconductor device A1, the signal wiring section 52 includes a plurality of separate sections 522 that are spaced apart from each other. Each of the plurality of separate sections 522 is electrically connected to each of the third electrodes 13 of the plurality of first semiconductor elements 1 via each of the plurality of connecting members 731. Each first circuit component 3A is joined to each separate section 522, spanning across two separate sections 522. With this configuration, the third electrodes 13 of the plurality of first semiconductor elements 1 are electrically connected to each other via the two connecting members 731, two or more separate sections 522, and one or more first circuit components 3A. Therefore, semiconductor device A1 can electrically connect the third electrodes 13 of the plurality of first semiconductor elements 1 to each other via at least one of the plurality of first circuit components 3A. The same applies to the circuit configuration of the lower arm. In other words, semiconductor device A1 can electrically connect the sixth electrodes 23 of the plurality of second semiconductor elements 2 to each other via at least one of the plurality of second circuit components 3B.

[0107] In semiconductor device A1, the first power terminal 5P is located on one side of the arrangement direction (first direction x) of the multiple first semiconductor elements 1. Resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel can be suppressed by equalizing the conduction path from the first power terminal 5P to the first electrode 11 (drain) of each first semiconductor element 1. However, in semiconductor device A1, equalizing the conduction path as described above is difficult due to the positional relationship between the multiple first semiconductor elements 1 and the first power terminal 5P. Therefore, when it is difficult to equalize the conduction path from the first power terminal 5P to each third electrode 13, increasing the impedance between each third electrode 13 (gate) by the first circuit component 3A as described above is effective in suppressing resonance phenomena. The same applies to the circuit configuration of the lower arm. In other words, when it is difficult to equalize the conduction path from the third power terminal 5O to the fourth electrode 21 (drain) of each second semiconductor element 2, increasing the impedance between each sixth electrode 23 (gate) using the second circuit component 3B as described above is effective in suppressing resonance phenomena.

[0108] The semiconductor device A1 includes a plurality of connecting members 741, a detection terminal 63, and a signal wiring section 54. Each of the plurality of connecting members 741 is individually joined to the second electrode 12 of a plurality of first semiconductor elements 1. The detection terminal 63 is conductive to the second electrode 12 of the plurality of first semiconductor elements 1. The signal wiring section 54 is electrically interposed between the plurality of connecting members 741 and the detection terminal 63. According to the inventor's research, when a plurality of first semiconductor elements 1 are operated in parallel in the semiconductor device A1, the frequency of resonance phenomena occurs changes depending on the inductance of the conduction path between the second electrode 12 (source) of the plurality of first semiconductor elements 1, via each connecting member 741 and the signal wiring section 54. Specifically, it was found that the larger the inductance, the more likely resonance phenomena are to occur, and the occurrence of resonance phenomena can be suppressed by reducing the inductance. Therefore, in semiconductor device A1, a pad portion 543 is provided in the signal wiring portion 54 between two first semiconductor elements 1 that are adjacent in the first direction x in a plan view. Then, each of the multiple connecting members 741 is joined to the pad portion 543 and to the second electrode 12 of the first semiconductor element 1 adjacent to the pad portion 543 in a plan view. This makes it possible to shorten the conduction path between the second electrodes 12 of the multiple first semiconductor elements 1 and reduce the inductance between the second electrodes 12 of the multiple first semiconductor elements 1. For example, compared to a different configuration from semiconductor device A1, where each connecting member 741 is joined to the strip portion 542 instead of each pad portion 543, the conduction path between the second electrodes 12 can be shortened and the inductance between the second electrodes 12 can be reduced. Therefore, semiconductor device A1 can suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. This is also true when multiple second semiconductor elements 2 are operated in parallel. In other words, in semiconductor device A1, two adjacent fifth electrodes 22 in the first direction x are electrically connected via the pad portion 553 of the signal wiring portion 55, making it possible to suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0109] In semiconductor device A1, some of the multiple first semiconductor elements 1 have two connecting members 741 connected to them (for example, a first inner element 1B). With this configuration, it is possible to shorten the conduction path between each of the multiple first semiconductor elements 1's second electrodes 12 compared to the case where only one connecting member 741 is connected to each first semiconductor element 1. The same applies to the circuit configuration of the lower arm. In other words, in semiconductor device A1, some of the multiple second semiconductor elements 2 have two connecting members 742 connected to them (for example, a second inner element 2B), which makes it possible to shorten the conduction path between each of the multiple second semiconductor elements 2's fifth electrodes 22.

[0110] In semiconductor device A1, each first semiconductor element 1 has a second electrode 12 which includes two first detection pads 122. The two first detection pads 122 are arranged on either side of the third electrode 13 in the arrangement direction (first direction x) of the multiple first semiconductor elements 1. This configuration makes it easy to join each connecting member 741 to each first detection pad 122 and to each pad portion 543 located on either side of the arrangement direction of the multiple first semiconductor elements 1 in the first inner element 1B of the multiple first semiconductor elements 1. Therefore, semiconductor device A1 is preferable for shortening the conduction path between the second electrodes 12 of the multiple first semiconductor elements 1. This is also true for the circuit configuration of the lower arm. In other words, in each second semiconductor element 2, the two second detection pads 222 of the fifth electrode 22 are arranged on either side of the sixth electrode 23 in the arrangement direction (first direction x) of the multiple second semiconductor elements 2. As a result, semiconductor device A1 is preferable in that it shortens the conduction path between the fifth electrodes 22 of the multiple second semiconductor elements 2.

[0111] In semiconductor device A1, the wire diameter of each connecting member 741 is thicker than that of each connecting member 731. With this configuration, if the length of each connecting member 731 and the length of each connecting member 741 are the same, each connecting member 741 will have a lower parasitic inductance than each connecting member 731. Therefore, semiconductor device A1 is preferable for reducing parasitic inductance between the second electrode 12 (first detection pad 122) of each first semiconductor element 1 and the pad portion 543. Similarly, in semiconductor device A1, the wire diameter of each connecting member 742 is thicker than that of each connecting member 732. With this configuration, if the length of each connecting member 732 and the length of each connecting member 742 are the same, each connecting member 741 will have a lower parasitic inductance than each connecting member 731. Therefore, semiconductor device A1 is preferable for reducing parasitic inductance between the fifth electrode 22 (second detection pad 222) of each second semiconductor element 2 and each pad portion 543.

[0112] Next, other embodiments of the semiconductor device of this disclosure will be described.

[0113] Figures 18 and 19 show a semiconductor device A2 according to a second embodiment.

[0114] Semiconductor device A2 differs from semiconductor device A1 mainly in the following respects. As shown in Figure 18, in semiconductor device A2, the extension portion 523 is not connected to any of the multiple individual portions 522 and is spaced apart from the multiple individual portions 522. However, the extension portion 523 and the individual portion 522 adjacent to it are connected by a first circuit component 3A, and electrical conductivity is maintained through this first circuit component 3A. Similarly, in semiconductor device A2, the extension portion 533 is not connected to any of the multiple individual portions 532 and is spaced apart from the multiple individual portions 522. However, the extension portion 533 and the individual portion 532 adjacent to it are connected by a second circuit component 3B, and electrical conductivity is maintained through this second circuit component 3B.

[0115] In the semiconductor device A2 configured as described above, as shown in Figure 19, at least one first circuit component 3A is electrically interposed in the conduction path from the control terminal 61 to each third electrode 13 (gate) in any of the multiple first semiconductor elements 1. Similarly, at least one second circuit component 3B is electrically interposed in the conduction path from the control terminal 62 to each sixth electrode 23 (gate) in any of the multiple second semiconductor elements 2.

[0116] In semiconductor device A2, as with semiconductor device A1, resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel can be suppressed. Furthermore, in semiconductor device A2, as with semiconductor device A1, resonance phenomena that occur when multiple second semiconductor elements 2 are operated in parallel can be suppressed.

[0117] In semiconductor device A2, at least one first circuit component 3A is interposed in the conduction path from the control terminal 61 to each third electrode 13 in any of the multiple first semiconductor elements 1. In a configuration different from semiconductor device A2, where the first circuit component 3A is not present, if the conduction path from the control terminal 61 to each third electrode 13 is short, the parasitic inductance in that conduction path becomes low. This decrease in parasitic inductance is a factor that causes unexpected parasitic oscillations in the first drive signal (for example, the gate voltage). However, in semiconductor device A2, since the first circuit component 3A is electrically interposed in the conduction path from the control terminal 61 to each third electrode 13 in all first semiconductor elements 1, the inductance of each conduction path can be increased. For this reason, even in the first semiconductor element 1 with the shortest conduction path from the control terminal 61 to the third electrode 13, for example, an appropriate inductance can be secured in the conduction path from the control terminal 61 to the third electrode 13. Therefore, the semiconductor device A2 can suppress parasitic oscillations occurring in each first semiconductor element 1. The same applies to the circuit configuration on the lower arm side. In other words, in the semiconductor device A2, at least two second circuit components 3B are interposed in the conduction path from the control terminal 62 to each sixth electrode 23 in any of the multiple second semiconductor elements 2. As a result, the semiconductor device A2 can suppress parasitic oscillations occurring in each second semiconductor element 2.

[0118] In the second embodiment, an example was shown in which the extension portion 523 and a plurality of individual portions 522 are separated, but the invention is not limited thereto. The extension portion 523 may be separated into two parts, and a common first circuit component 3A may be joined to the two parts. Similarly, in the second embodiment, an example was shown in which the extension portion 533 and a plurality of individual portions 532 are separated, but the invention is not limited thereto. The extension portion 533 may be separated into two parts, and a common second circuit component 3B may be joined to the two parts.

[0119] Figures 20 and 21 show a semiconductor device A3 according to the third embodiment.

[0120] Semiconductor device A3 differs from semiconductor device A1 primarily in the following respects. As shown in Figure 20, in semiconductor device A3, two adjacent individual parts 522 in the first direction x conduct through a plurality of first circuit components 3A connected in series. Accordingly, in semiconductor device A3, the signal wiring section 52 further includes a plurality of relay sections 524. In the illustrated example, two adjacent individual parts 522 in the first direction x conduct through two first circuit components 3A, but they may conduct through three or more first circuit components 3A. Similarly, in semiconductor device A3, two adjacent individual parts 532 in the first direction x conduct through a plurality of second circuit components 3B connected in series. Therefore, in semiconductor device A3, the signal wiring section 53 further includes a plurality of relay sections 524. In the illustrated example, two adjacent individual parts 532 in the first direction x conduct through two second circuit components 3B, but they may conduct through three or more second circuit components 3B.

[0121] As shown in Figure 20, multiple relay sections 524 are arranged one at a time between two adjacent individual sections 522 in the first direction x. A first circuit component 3A is connected to the relay section 524 and the individual section 522 adjacent in the first direction x. Therefore, each relay section 524 is electrically connected to the individual section 522 located on one side of the first direction x via the first circuit component 3A, and also to the individual section 522 located on the other side of the first direction x via the first circuit component 3A. Thus, two adjacent individual sections 522 in the first direction x are electrically connected via two first circuit components 3A and one relay section 524. If three or more first circuit components 3A are to be used instead of two, the number of relay sections 524 placed between adjacent individual sections 522 can be increased, and a first circuit component 3A can be connected to every two adjacent relay sections 524.

[0122] Similarly, as shown in Figure 20, multiple relay sections 534 are arranged one at a time between two adjacent individual sections 532 in the first direction x. A first circuit component 3A is connected to the relay section 534 and individual section 532 adjacent in the first direction x. Therefore, each relay section 534 is electrically connected to the individual section 532 located on one side of the first direction x via the second circuit component 3B, and also to the individual section 532 located on the other side of the first direction x via the second circuit component 3B. Thus, two adjacent individual sections 532 in the first direction x are electrically connected via two second circuit components 3B and one relay section 534. Note that if three or more second circuit components 3B are to be used instead of two, the number of relay sections 534 placed between adjacent individual sections 532 can be increased, and a second circuit component 3B can be connected to every two adjacent relay sections 534.

[0123] In the semiconductor device A3 configured as described above, as shown in Figure 21, the third electrodes 13 (gates) of any two of the multiple first semiconductor elements 1 are electrically connected to each other via at least two first circuit components 3A. Similarly, as shown in Figure 22, the sixth electrodes 23 (gates) of any two of the multiple second semiconductor elements 2 are electrically connected to each other via at least two second circuit components 3B.

[0124] Multiple first circuit components 3A connected in series between two adjacent individual parts 522 in the first direction x may have different or the same target frequency bands for increasing impedance. If the target frequency bands are different, the individual target frequency bands of each first circuit component 3A are combined, and the impedance can be increased over a wider frequency band than that of each individual first circuit component 3A. In this case, it is sufficient that the combined frequency band includes the first frequency band. On the other hand, if the target frequency bands are the same, the individual impedances of each first circuit component 3A are combined, and the increase in impedance in the target frequency band can be made greater. The same applies to multiple second circuit components 3B connected in series between two adjacent individual parts 532 in the first direction x.

[0125] In semiconductor device A3, as with semiconductor device A1, resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel can be suppressed. Furthermore, in semiconductor device A3, as with semiconductor device A1, resonance phenomena that occur when multiple second semiconductor elements 2 are operated in parallel can be suppressed.

[0126] In semiconductor device A3, multiple first circuit components 3A are electrically interposed in series between two adjacent individual parts 522 in the first direction x. With this configuration, by appropriately combining the individual performance of the multiple first circuit components 3A (such as the target frequency band and impedance mentioned above), the impedance between the two individual parts 522 can be easily adjusted according to variations in the performance of each first semiconductor element 1 and the unevenness of the current (drain current) of each first semiconductor element 1. The same applies to multiple second circuit components 3B connected in series between two adjacent individual parts 532 in the first direction x.

[0127] In the third embodiment, the extension portion 523 and the individual portion 522 were directly connected, similar to semiconductor device A1, but they may also be connected via the first circuit component 3A, similar to semiconductor device A2. The same applies to the extension portion 533 and the individual portion 532.

[0128] Figures 22 and 23 show a semiconductor device A4 according to the fourth embodiment.

[0129] Semiconductor device A4 differs from semiconductor device A1 mainly in the following respects. As shown in Figure 22, in semiconductor device A4, the signal wiring section 52 further includes a strip-shaped section 525. Similarly, in semiconductor device A4, the signal wiring section 53 further includes a strip-shaped section 535.

[0130] The strip-shaped portion 525 extends in a first direction x in a plan view. The strip-shaped portion 525 is connected to an extension portion 523. The strip-shaped portion 525 is electrically connected to the joint portion 521 via the extension portion 523. Multiple first circuit components 3A are joined to the strip-shaped portion 525. One terminal of each of the multiple first circuit components 3A is joined to the strip-shaped portion 525, and the other terminal is joined to each individual portion 522. In the example shown in Figure 22, the strip-shaped portion 525 is located between multiple first semiconductor elements 1 and multiple individual portions 522 in a second direction y. Therefore, the connecting members 731 joined to each individual portion 522 intersect the strip-shaped portion 525 in a plan view. The strip-shaped portion 525 is an example of a "first strip-shaped portion".

[0131] The strip-shaped portion 535 extends in a first direction x in a plan view. The strip-shaped portion 535 is connected to an extension portion 533. The strip-shaped portion 535 is electrically connected to the joint portion 531 via the extension portion 533. Multiple second circuit components 3B are joined to the strip-shaped portion 535. Each of the multiple second circuit components 3B has one terminal joined to the strip-shaped portion 535 and the other terminal joined to each individual portion 532. In the example shown in Figure 22, the strip-shaped portion 535 is located between the multiple second semiconductor elements 2 and the multiple individual portions 532 in a second direction y. Therefore, the connecting members 732 joined to each individual portion 532 intersect the strip-shaped portion 535 in a plan view.

[0132] In the semiconductor device A4 configured as described above, as shown in Figure 23, the control terminal 61 and the third electrode 13 (gate) of each first semiconductor element 1 are electrically connected via one first circuit component 3A. Furthermore, in any two of the multiple first semiconductor elements 1, the third electrodes 13 (gates) are electrically connected via two first circuit components 3A. Similarly, as shown in Figure 23, the control terminal 62 and the sixth electrode 23 (gate) of each second semiconductor element 2 are electrically connected via one second circuit component 3B. Furthermore, in any two of the multiple second semiconductor elements 2, the sixth electrodes 23 (gates) are electrically connected via two second circuit components 3B.

[0133] In semiconductor device A4, as with semiconductor device A1, resonance phenomena that occur when multiple first semiconductor elements 1 are operated in parallel can be suppressed. Furthermore, in semiconductor device A4, as with semiconductor device A1, resonance phenomena that occur when multiple second semiconductor elements 2 are operated in parallel can be suppressed.

[0134] In semiconductor device A4, the number of first circuit components 3A connected to the conduction path between the control terminal 61 and the third electrode 13 (gate) of each first semiconductor element 1 is the same. With this configuration, impedance bias can be suppressed in the conduction path from the control terminal 61 to the third electrode 13 of each first semiconductor element 1. Therefore, semiconductor device A4 can suppress variations in the first drive signal input to each first semiconductor element 1, and thus suppress variations in the switching operation of each first semiconductor element 1. The same applies to the circuit configuration of the lower arm. In other words, semiconductor device A4 has the same number of second circuit components 3B connected to the conduction path between the detection terminal 63 and the sixth electrode 23 (gate) of each second semiconductor element 2. As a result, semiconductor device A4 can suppress variations in the second drive signal input to each second semiconductor element 2, and thus suppress variations in the switching operation of each second semiconductor element 2.

[0135] In semiconductor device A4, similar to semiconductor device A3, instead of each individual first circuit component 3A, multiple first circuit components 3A connected in series may be used. In this case, for example, a relay section 524 may be placed between each individual section 522 and the strip section 525. Similarly, similar to semiconductor device A3, instead of each second circuit component 3B, multiple second circuit components 3B connected in series may be used. In this case, for example, a relay section 534 may be placed between each individual section 532 and the strip section 535.

[0136] The semiconductor device according to this disclosure is not limited to the resin molded type package structure shown in each semiconductor device A1 to A4. The resin molded type is a package structure in which a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2, etc., are covered by a resin member 8, as shown in semiconductor devices A1 to A4. For example, the semiconductor device according to this disclosure may be a case type as shown in Figures 24 and 25. The case type is a package structure in which a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2, etc., are housed in a case 9 made of resin, for example, as shown in Figures 24 and 25.

[0137] The semiconductor device shown in Figures 24 and 25 includes a power terminal 601 as a first power terminal section 5P, a power terminal 602 as a second power terminal section 5N, and two power terminals 603 as a third power terminal section 5O. Each of the power terminals 601 to 603 includes a portion housed in the case 9 and a portion exposed from the case 9. Of the power terminals 601, a portion housed in the case 9 is joined to the power wiring section 511. Multiple first semiconductor elements 1 are mounted on the power wiring section 511. Of the power terminals 602, a portion housed in the case 9 is joined to the power wiring section 512. Of the power terminals 603, a portion housed in the case 9 is joined to the power wiring section 513. Multiple second semiconductor elements 2 are mounted on the power wiring section 513. In the semiconductor device shown in Figures 24 and 25, the power wiring section 511 is an example of a "first mounting section," and the power wiring section 513 is an example of a "second mounting section."

[0138] In the examples shown in Figures 24 and 25, the signal wiring section 54 includes two strip-shaped sections 542. The two strip-shaped sections 542 are located one on each side of the joint 541 in the first direction x, and each is connected to the joint 541. Each connecting member 741 is connected to one of the two strip-shaped sections 542. Similarly, the signal wiring section 55 includes two strip-shaped sections 552. The two strip-shaped sections 552 are located one on each side of the joint 551 in the first direction x, and each is connected to the joint 551. Each connecting member 742 is connected to one of the two strip-shaped sections 552.

[0139] In the examples shown in Figures 24 and 25, the control terminal 61 and the joint 521 are electrically connected via the connecting member 751. The control terminal 62 and the joint 531 are electrically connected via the connecting member 752. The detection terminal 63 and the joint 541 are electrically connected via the connecting member 761. The detection terminal 64 and the joint 551 are electrically connected via the connecting member 762. Each of the connecting members 751, 752, 761, and 762 is, for example, a bonding wire.

[0140] The semiconductor device described herein is not limited to one in which a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2 are operated in parallel. The semiconductor device described herein may, for example, not include a plurality of second semiconductor elements 2, but instead consist of a plurality of first semiconductor elements 1 operated in parallel.

[0141] The semiconductor device according to this disclosure is not limited to those in which the first power terminal portion 5P, the second power terminal portion 5N, and the third power terminal portion 5O are each arranged in one of the arrangement directions (first direction x) of the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2. The semiconductor device according to this disclosure may also be one in which the first power terminal portion 5P, the second power terminal portion 5N, and the third power terminal portion 5O are each arranged in one of the directions (second direction y) that intersects the arrangement directions (first direction x) of the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2.

[0142] The semiconductor devices relating to this disclosure are not limited to the embodiments described above. The specific configurations of the parts of the semiconductor devices relating to this disclosure can be modified in various ways. For example, this disclosure includes the embodiments described in the following appendix. Note 1. A plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, whose switching operation is controlled according to a first drive signal input to the third electrode, A first control terminal for inputting the first drive signal, A first conductive member that is electrically connected to the first control terminal and electrically interposed between the third electrodes of the plurality of first semiconductor elements, A plurality of first circuit components connected to the first conductive member, which increase the impedance in the first frequency band, It is equipped with, The plurality of first semiconductor elements are electrically connected in parallel to one another. The first frequency band includes the resonant frequency of the resonant circuit formed with the parasitic inductance of the first conductive member, A semiconductor device in which the third electrodes of the plurality of first semiconductor elements are electrically connected to one another via at least one of the plurality of first circuit components. Note 2. The semiconductor device described in Appendix 1, wherein each of the plurality of first circuit components is an inductance element. Note 3. The semiconductor device described in Appendix 2, wherein the inductance element is a ferrite bead. Note 4. The first conductive member includes a first signal wiring section to which the first control terminal is connected and which transmits the first drive signal, and a plurality of first connecting members each connected to the third electrode of the plurality of first semiconductor elements, The first signal wiring section includes a plurality of first individual sections spaced apart from each other, The plurality of first connecting members are connected to the plurality of first individual parts, respectively, in the semiconductor device according to any one of Appendix 1 to Appendix 3. Note 5. The semiconductor device according to Appendix 4, wherein each of the plurality of first individual parts is joined to any of the plurality of first circuit components. Note 6. The plurality of first semiconductor elements are arranged in a first direction perpendicular to the thickness direction of the plurality of first semiconductor elements. The semiconductor device according to Appendix 5, wherein the plurality of first individual parts are arranged in the first direction and are located with respect to the plurality of first semiconductor elements in one of the second directions perpendicular to the thickness direction and the first direction. Note 7. The first control terminal is located in one of the first directions relative to the plurality of first semiconductor elements. The first signal wiring section includes a first joint to which the first control terminal is connected. The semiconductor device according to Appendix 6, wherein the first joint is electrically connected to each of the plurality of first individual parts. Note 8. The semiconductor device according to Appendix 7, wherein the plurality of first individual parts include two first individual parts adjacent to each other in the first direction, and the two first individual parts are electrically connected through at least one of the plurality of first circuit components. Note 9. The first signal wiring portion includes a first strip-shaped portion that extends in the first direction when viewed in the thickness direction, The first strip portion is electrically connected to the first joint portion. The semiconductor device according to Appendix 7, wherein each of the plurality of first circuit components is joined to a corresponding one of the plurality of first individual parts and to the first strip-shaped part. Note 10. The first strip-shaped portion is located in the second direction between the plurality of first semiconductor elements and the plurality of first individual portions. Each of the plurality of first connecting members intersects the first strip-shaped portion when viewed in the thickness direction, as described in Appendix 9, for the semiconductor device described in Appendix 9. Note 11. A plurality of second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, whose switching operation is controlled according to a second drive signal input to the sixth electrode, The second control terminal to which the second drive signal is input, A second conductive member that is electrically connected to the second control terminal and electrically connected to the sixth electrodes of the plurality of second semiconductor elements, A plurality of second circuit components connected to the second conductive member, which increase the impedance for the second frequency band, It also has the following features: The plurality of second semiconductor elements are electrically connected in parallel to one another. The second frequency band includes the resonant frequency of the resonant circuit formed with the parasitic inductance of the second conductive member, The semiconductor device according to any one of appendices 6 to 10, wherein the sixth electrodes of the plurality of second semiconductor elements are electrically connected to each other via at least one of the plurality of second circuit components. Note 12. The second conductive member includes a second signal wiring section to which the second control terminal is connected and which transmits the second drive signal, and a plurality of second connecting members each connected to the sixth electrode of the plurality of second semiconductor elements, The second signal wiring section includes a plurality of second individual sections spaced apart from each other, The semiconductor device described in Appendix 11, wherein the plurality of second connecting members are connected to the plurality of second individual parts, respectively. Note 13. The semiconductor device according to Appendix 12, wherein each of the plurality of second individual parts is joined to one of the plurality of second circuit components. Note 14. The plurality of second semiconductor elements are arranged in the first direction and are located on the side opposite to the side where the plurality of first individual parts are located in the second direction, relative to the plurality of first semiconductor elements. The plurality of second individual parts are the 1st direction The semiconductor device according to Appendix 13, which is arranged in such a manner and is located on the side opposite to the side on which the plurality of first semiconductor elements are located in the second direction, relative to the plurality of second semiconductor elements. Note 15. The second control terminal is located in one direction relative to the plurality of second semiconductor elements in the first direction. The second signal wiring section includes a second joint to which the second control terminal is connected. The semiconductor device according to Appendix 14, wherein the second joint is electrically connected to each of the plurality of second individual parts. Note 16. The insulating substrate further comprises a main substrate surface and a back substrate surface that are spaced apart in the thickness direction, The semiconductor device according to any one of appendices 12 to 15, wherein the first signal wiring section and the second signal wiring section are formed on the main surface of the substrate. Note 17. Each of the plurality of first semiconductor elements has a first element main surface that faces the same direction as the substrate main surface in the thickness direction, and a first element back surface that faces the same direction as the substrate back surface in the thickness direction. The first electrode is formed on the back surface of the first element, The second electrode and the third electrode are formed on the main surface of the first element. Each of the plurality of second semiconductor elements has a second element main surface that faces the same direction as the first element main surface in the thickness direction, and a second element back surface that faces the same direction as the first element back surface. The fourth electrode is formed on the back surface of the second element, The semiconductor device described in Appendix 16, wherein the fifth electrode and the sixth electrode are formed on the main surface of the second element. Note 18. A first mounting section on which the plurality of first semiconductor elements are mounted, The device further comprises a second mounting section on which the plurality of second semiconductor elements are mounted, The first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other. The plurality of first semiconductor elements are connected to each other via the first mounting portion, the first electrodes of which are electrically connected to each other. The semiconductor device described in Appendix 17, wherein the plurality of second semiconductor elements are electrically connected to each other via the second mounting portion, and the fourth electrodes are electrically connected to each other. Note 19. The first mounting portion and the second mounting portion face the back surface of the substrate, The insulating substrate includes a plurality of first openings and a plurality of second openings, each penetrating from the main surface of the substrate to the back surface of the substrate in the thickness direction. The plurality of first openings each surround the plurality of first semiconductor elements when viewed in the thickness direction, The semiconductor device according to Appendix 18, wherein the plurality of second openings surround the plurality of second semiconductor elements when viewed in the thickness direction. Note 20. A first power terminal portion that conducts to the first electrode of each of the plurality of first semiconductor elements, A second power terminal portion that conducts to the fifth electrode of each of the plurality of second semiconductor elements, The device further comprises a third power terminal portion that conducts to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, A DC voltage is input between the first power terminal and the second power terminal. The DC voltage is converted into an AC voltage by the switching operations of the plurality of first semiconductor elements and the plurality of second semiconductor elements. The AC voltage is output from the third power terminal, and is a semiconductor device according to any one of appendices 16 to 19. [Explanation of Symbols]

[0143] A1~A4: Semiconductor device 1: First semiconductor device 1A: First outer element 1B: First inner element 10a: Main surface of the element 10b: Back surface of the element 11: First electrode 12: Second electrode 121: First power pad 122: First detection pad 13: Third electrode 19: Conductive bonding material 2: Second semiconductor element 2A: Second outer element 2B: Second inner element 20a: Main surface of the element 20b: Back surface of the element 21: 4th electrode 22: 5th electrode 221: Second power pad 222: Second detection pad 23: 6th electrode 29: Conductive bonding material 3: Circuit component 3A: First circuit component 3B: Second circuit component 4: Support member 41,42: Conductive plate 41a,42a: Mounting surface 419,429: Joining material 43,44: Insulating board 44: Insulating board 50: Insulating substrate 501: Main surface 502: Back surface 503, 504: Through hole 505, 506: Opening 511,512,513,514: Power wiring section 511a, 514a: Opening 511b, 513a, 514b: Through hole 5P: 1st power terminal section 5N: 2nd power terminal section 5O: Third power terminal section 52: Signal wiring section 521: Joint section 522: Individual section 523: Extension section 524: Relay section 525: Strip section 53: Signal wiring section 531: Joint section 532: Individual section 533: Extension section 534: Relay section 535: Strip-shaped section 54: Signal wiring section 541: Joint section 542: Strip portion 543: Pad portion 544: Extension portion 55: Signal wiring section 551: Joint section 552: Strip section 553: Pad section 554: Extension section 56: Signal wiring section 561: Through hole 58, 59: Metal component 61, 62: Control terminal 63, 64, 65: Detection terminals 601~603: Power terminals 7: Connecting member 71, 72: Connecting member 731, 732: Connecting member 741,742: Connecting members 751,752: Connecting members 761,762: Connecting member 8: Resin member 81: Resin main surface 82: Resin back 831~834: Resin sides 9: Case

Claims

1. A plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, whose switching operation is controlled according to a first drive signal input to the third electrode, A first control terminal for inputting the first drive signal, A first conductive member that is electrically connected to the first control terminal and electrically interposed between the third electrodes of the plurality of first semiconductor elements, A plurality of first circuit components connected to the first conductive member, which increase the impedance in the first frequency band, It is equipped with, The plurality of first semiconductor elements are electrically connected in parallel to one another. The first frequency band includes the resonant frequency of the resonant circuit formed with the parasitic inductance of the first conductive member, The third electrodes of the plurality of first semiconductor elements are electrically connected to each other via at least one of the plurality of first circuit components. Each of the plurality of first circuit components is an inductance element, Each of the plurality of first semiconductor elements switches between a conductive state and a disconnected state in response to the first drive signal, and in the conductive state, current flows from the first electrode to the second electrode. A semiconductor device wherein each of the plurality of first circuit components increases the impedance in the first frequency band in a loop path passing through the first electrode and the third electrode.

2. The semiconductor device according to claim 1, wherein the inductance element is a ferrite bead.

3. The first conductive member includes a first signal wiring section to which the first control terminal is connected and which transmits the first drive signal, and a plurality of first connecting members each connected to the third electrode of the plurality of first semiconductor elements, The first signal wiring section includes a plurality of first individual sections spaced apart from each other, The semiconductor device according to claim 1, wherein the plurality of first connecting members are connected to the plurality of first individual parts, respectively.

4. The semiconductor device according to claim 3, wherein each of the plurality of first individual parts is joined to any of the plurality of first circuit components.

5. The plurality of first semiconductor elements are arranged in a first direction perpendicular to the thickness direction of the plurality of first semiconductor elements. The semiconductor device according to claim 4, wherein the plurality of first individual parts are arranged in the first direction and are located with respect to the plurality of first semiconductor elements in one of the second directions perpendicular to the thickness direction and the first direction.

6. The first control terminal is located in one of the first directions relative to the plurality of first semiconductor elements. The first signal wiring section includes a first joint to which the first control terminal is connected. The semiconductor device according to claim 5, wherein the first joint is electrically connected to each of the plurality of first individual parts.

7. The semiconductor device according to claim 6, wherein the plurality of first individual parts include two first individual parts adjacent to each other in the first direction, and the two first individual parts are electrically connected through at least one of the plurality of first circuit components.

8. The first signal wiring portion includes a first strip-shaped portion that extends in the first direction when viewed in the thickness direction, The first strip portion is electrically connected to the first joint portion. The semiconductor device according to claim 6, wherein each of the plurality of first circuit components is joined to a corresponding one of the plurality of first individual parts and to the first strip-shaped part.

9. The first strip-shaped portion is located between the plurality of first semiconductor elements and the plurality of first individual portions in the second direction. The semiconductor device according to claim 8, wherein each of the plurality of first connecting members intersects the first strip-shaped portion when viewed in the thickness direction.

10. A plurality of second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, whose switching operation is controlled according to a second drive signal input to the sixth electrode, The second control terminal to which the second drive signal is input, A second conductive member that is electrically connected to the second control terminal and electrically connected to the sixth electrodes of the plurality of second semiconductor elements, A plurality of second circuit components connected to the second conductive member, which increase the impedance with respect to the second frequency band, It also has the following features: The plurality of second semiconductor elements are electrically connected in parallel to one another. The second frequency band includes the resonant frequency of the resonant circuit formed with the parasitic inductance of the second conductive member, The semiconductor device according to claim 5, wherein the sixth electrodes of the plurality of second semiconductor elements are electrically connected to one another via at least one of the plurality of second circuit components.

11. Each of the plurality of second circuit components is an inductance element, Each of the plurality of second semiconductor elements switches between a conductive state and a disconnected state in response to the second drive signal, and in the conductive state, current flows from the fourth electrode to the fifth electrode. The semiconductor device according to claim 10, wherein each of the plurality of second circuit components increases the impedance in the second frequency band in the loop path passing through the fourth electrode and the sixth electrode.

12. The second conductive member includes a second signal wiring section to which the second control terminal is connected and which transmits the second drive signal, and a plurality of second connecting members each connected to the sixth electrode of the plurality of second semiconductor elements, The second signal wiring section includes a plurality of second individual sections spaced apart from each other, The semiconductor device according to claim 11, wherein the plurality of second connecting members are connected to the plurality of second individual parts, respectively.

13. The semiconductor device according to claim 12, wherein each of the plurality of second individual parts is joined to any of the plurality of second circuit components.

14. The plurality of second semiconductor elements are arranged in the first direction and are located on the side opposite to the side where the plurality of first individual parts are located in the second direction, The semiconductor device according to claim 13, wherein the plurality of second individual parts are arranged in the first direction and are located on the side opposite to the side on which the plurality of first semiconductor elements are located in the second direction.

15. The second control terminal is located in one direction relative to the plurality of second semiconductor elements in the first direction. The second signal wiring section includes a second joint to which the second control terminal is connected. The semiconductor device according to claim 14, wherein the second junction is electrically connected to each of the plurality of second individual parts.

16. The insulating substrate further comprises a main substrate surface and a back substrate surface that are spaced apart in the thickness direction, The semiconductor device according to claim 12, wherein the first signal wiring section and the second signal wiring section are formed on the main surface of the substrate.

17. Each of the plurality of first semiconductor elements has a first element main surface that faces the same direction as the substrate main surface in the thickness direction, and a first element back surface that faces the same direction as the substrate back surface in the thickness direction. The first electrode is formed on the back surface of the first element, The second electrode and the third electrode are formed on the main surface of the first element. Each of the plurality of second semiconductor elements has a second element main surface that faces the same direction as the first element main surface in the thickness direction, and a second element back surface that faces the same direction as the first element back surface. The fourth electrode is formed on the back surface of the second element, The semiconductor device according to claim 16, wherein the fifth electrode and the sixth electrode are formed on the main surface of the second element.

18. A first mounting section on which the plurality of first semiconductor elements are mounted, The device further comprises a second mounting section on which the plurality of second semiconductor elements are mounted, The first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other. The plurality of first semiconductor elements are connected to each other via the first mounting portion, with the first electrodes electrically connected to each other. The semiconductor device according to claim 17, wherein the plurality of second semiconductor elements are electrically connected to each other via the second mounting portion, the fourth electrodes.

19. The first mounting portion and the second mounting portion face the back surface of the substrate, The insulating substrate includes a plurality of first openings and a plurality of second openings, each penetrating from the main surface of the substrate to the back surface of the substrate in the thickness direction, The plurality of first openings each surround the plurality of first semiconductor elements when viewed in the thickness direction, The semiconductor device according to claim 18, wherein the plurality of second openings surround the plurality of second semiconductor elements when viewed in the thickness direction.

20. A first power terminal portion that conducts to the first electrode of each of the plurality of first semiconductor elements, A second power terminal portion that conducts to the fifth electrode of each of the plurality of second semiconductor elements, The device further comprises a third power terminal portion that conducts to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, A DC voltage is input between the first power terminal and the second power terminal. The DC voltage is converted to an AC voltage by the switching operations of the plurality of first semiconductor elements and the plurality of second semiconductor elements. The AC voltage is output from the third power terminal, according to any one of claims 16 to 19.

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