Optoelectronic components and methods for manufacturing optoelectronic components

Abstract

The optoelectronic component comprises a carrier, at least one optoelectronic semiconductor chip arranged on the carrier, and a housing comprising a molding, the housing at least partially enclosing the optoelectronic semiconductor chip, and a reflective layer arranged on at least one side of the optoelectronic semiconductor chip. Further provided is a method for producing the optoelectronic component.

Description

Technical Field

[0001] To provide optoelectronic components and a method for manufacturing optoelectronic components.

Background Art

[0002] Optoelectronic components such as radiation emitting or radiation receiving components, for example light emitting diodes (LEDs) and detectors, are used in many applications. An optoelectronic component comprises, for example, a carrier, an optoelectronic semiconductor chip having an active region, and a housing. One function of the housing is to provide greater robustness and long life of the optoelectronic component. Housings that are subjected to ultraviolet (UV) radiation often have their lifespan shortened by attacks by UV radiation.

Summary of the Invention

Problems to be Solved by the Invention

[0003] It is an object to identify optoelectronic components that can operate particularly efficiently. It is a further object to identify a method for manufacturing optoelectronic components that can operate particularly efficiently.

Means for Solving the Problems

[0004] The above problems are solved by the subject matter of the independent claims. Advantageous configurations and further developments are shown in the description of the dependent claims.

[0005] According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a carrier. The carrier may consist of, for example, a growth substrate, or may include a growth substrate. The carrier may comprise a ceramic material, or a ceramic substrate. Alternatively, the carrier may be other mechanically supported components of the optoelectronic component. Furthermore, the carrier may comprise electrical contacts. This allows the optoelectronic component to be electrically contacted, for example, from the rear side. This allows a portion of the electrical contacts to be located on the underside of the carrier. This portion of the electrical contacts represents the electrical rear contacts of the optoelectronic component. Further portions of the electrical contacts may also be located on the upper side of the carrier. The electrically contacting portions on both the upper and lower sides of the carrier are electrically conductively connected to each other. Furthermore, the carrier may comprise a covering.

[0006] The carrier can be a three-dimensional body having, for example, at least the shape of a roughly rectangular parallelepiped, cylinder, or disk. The carrier can have a principal extending surface, which is parallel to the carrier's surface, for example, the covering surface.

[0007] According to at least one embodiment of an optoelectronic component, the optoelectronic component comprises at least one optoelectronic semiconductor chip disposed on a carrier. The optoelectronic semiconductor chip may be, for example, a light-emitting diode chip. The optoelectronic semiconductor chip can be designed to emit electromagnetic radiation when operating. For example, the optoelectronic semiconductor chip can emit electromagnetic radiation in the ultraviolet region. This radiation can be emitted in particular in directions in which the optoelectronic semiconductor chip is not surrounded by a housing or carrier. Alternatively, the optoelectronic semiconductor chip can also be suitably used to receive electromagnetic radiation. The optoelectronic semiconductor chip can be positioned on the upper side of the carrier, in the portion of the carrier's electrical contact. This causes the optoelectronic semiconductor chip to make electrical contact.

[0008] According to at least one embodiment of an optoelectronic component, the optoelectronic component comprises a housing comprising a molded body, the housing at least partially enclosing an optoelectronic semiconductor chip. For example, the molded body can be formed on the optoelectronic semiconductor chip by casting, injection molding, or extrusion. The molded body may comprise a molding compound, or may consist entirely of a molding compound. The molding compound may be, for example, a polymer, epoxy, or silicone, but is not necessarily limited to these. Note that "the housing at least partially enclosing the optoelectronic semiconductor chip" can mean that the housing at least partially encloses the optoelectronic semiconductor chip in a lateral direction parallel to the main extending plane of the carriers. This may mean that the housing extends at least partially laterally around the optoelectronic semiconductor chip. The housing can completely enclose the optoelectronic semiconductor chip in the lateral direction. The housing can be positioned spaced apart from the optoelectronic semiconductor chip. Furthermore, the housing can realize a mechanically robust optoelectronic component.

[0009] According to at least one embodiment of the optoelectronic component, a reflective layer is disposed on at least one side of an optoelectronic semiconductor chip. The reflective layer may be optically reflective. The reflective layer may be a layer with a reflectance of more than 40%, for example more than 50%, particularly more than 80%, preferably more than 90%, particularly preferably more than 95%, particularly nearly 100%. This reflectance can be achieved, for example, over a wide range of the electromagnetic radiation spectrum, or it can be applied only to a specific wavelength range. Alternatively or additionally, the reflective layer may have low transmittance. The transmittance can be up to 20%, for example up to 10%, and particularly up to 1%. This transmittance can be achieved, for example, over a wide range of the electromagnetic radiation spectrum, or it can be applied only to a specific wavelength range. For example, the wavelength range can be the UV-C region, i.e., the 100nm-280nm wavelength range. For this wavelength band, the reflective layer may have one of the reflectances and / or transmittances described above.

[0010] The reflective layer may consist of or contain a metal. For example, the reflective layer may contain gold, preferably rhodium, and particularly preferably aluminum. At least 90% of the volume of the reflective layer may consist of gold, rhodium, or aluminum.

[0011] Furthermore, the reflective layer can be, for example, a mirror. Therefore, the reflective layer can include, for example, a dielectric mirror, a hybrid mirror, or a multilayer mirror. In particular, the reflective side of the mirror can face an optoelectronic semiconductor chip.

[0012] The reflective layer may have a thickness of at least 20 nm, for example, at least 50 nm. For example, the reflective layer may have a thickness of at least 1 μm.

[0013] At least one side designates a face of the optoelectronic semiconductor chip. Therefore, the side is part of the optoelectronic semiconductor chip. Preferably, at least one side is a face of the optoelectronic semiconductor chip that is aligned perpendicularly or transversely to the main carrier extension surface. Furthermore, the side is a face that is not intended to emit electromagnetic radiation.

[0014] According to at least one embodiment, the optoelectronic component comprises a carrier, at least one optoelectronic semiconductor chip disposed on the carrier having a reflective layer on at least one side, and a housing having a molded body that at least partially surrounds the optoelectronic chip.

[0015] The optoelectronic components described here are based on the idea that a small portion of the radiation emitted by an optoelectronic semiconductor chip is absorbed by the surrounding housing and can instead be emitted in a preferred direction, thus enabling high brightness through the use of a reflective layer. This minimizes lateral emission from the optoelectronic semiconductor chip, which is typically unsuitable for application. The preferred emission or incidence direction can be one perpendicular to the main plane of carrier extension. The reflective layer protects at least a portion of the housing material from the emitted electromagnetic radiation. Typical housing materials can be damaged by electromagnetic radiation, including UV radiation. Such damage can be reduced by using at least a reflective layer. Thus, the housing material can be protected, for example, from UV radiation emitted by the optoelectronic semiconductor chip. This extends the lifespan of the optoelectronic component and allows for efficient operation.

[0016] According to at least one embodiment of the optoelectronic component, the reflective layer is in direct contact with the optoelectronic semiconductor chip in at least a portion of its surface. The reflective layer can be in direct contact with the optoelectronic semiconductor chip in at least a portion of its surface. The reflective layer can be in direct contact with the optoelectronic semiconductor chip across its entire surface. This means that the reflective layer can completely cover the surface. Direct contact of the reflective layer with the optoelectronic semiconductor chip allows for minimization, or at least reduction in size, of the component. This also enables higher brightness.

[0017] According to at least one embodiment of the optoelectronic component, at least one side of the optoelectronic semiconductor chip on which the reflective layer is located faces at least a portion of the housing. The optoelectronic semiconductor chip may have at least one side. The housing can at least partially form the optoelectronic semiconductor chip. For this reason, the housing can be located at least partially adjacent to at least one side of the optoelectronic semiconductor chip. The reflective layer may also be located on this at least one side. Facing a portion of the housing means that the side of the optoelectronic semiconductor chip having the reflective layer extends partially parallel to the housing, and only the reflective layer is located between the optoelectronic semiconductor chip and the housing. Thus, facing also means that the side of the optoelectronic semiconductor chip on which the reflective layer is applied is in direct contact with the housing. One idea of ​​the present invention is that materials that do not have high UV resistance can also be used as housing materials, for example, molding compounds. An advantage of the above embodiment is that the radiation emitted by the optoelectronic semiconductor chip is reflected by the reflective layer and is not radiated to the housing in these areas or transmitted through the housing material. This prevents the housing from being damaged by the emitted electromagnetic radiation.

[0018] According to at least one embodiment of the optoelectronic component, the reflective layer completely covers at least one side of the optoelectronic semiconductor chip. The reflective layer may completely cover all sides of the optoelectronic semiconductor chip. The advantage of the above embodiment is that the radiation emitted by the optoelectronic semiconductor chip is reflected particularly efficiently by the reflective layer on at least one side, i.e., across the entire side, and is not radiated to the housing or transmitted through the housing material. This protects the housing from damage caused by the radiated electromagnetic radiation.

[0019] According to at least one embodiment of the optoelectronic component, at least one side surface of the optoelectronic semiconductor chip extends transversely or perpendicularly to the main carrier extending surface. The side surface may include a main extending surface that extends transversely or perpendicularly to the main carrier extending surface. Thus, the side surface is a surface not intended to emit electromagnetic radiation. Preferably, radiation emitted from the side surface is reflected by a reflective layer.

[0020] According to at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip comprises an additional reflective layer on at least one further side surface extending transversely or perpendicularly to the main carrier plane. The further side surface is a different side surface of the optoelectronic semiconductor chip, and is therefore a different surface of the optoelectronic semiconductor chip from at least one of the sides. In other respects, the further side surface may have the same properties as the side surface. The further reflective layer is disposed on the further side surface of the optoelectronic semiconductor chip. The further reflective layer may have the same properties as the reflective layer. An advantage of this embodiment is that by arranging the reflective layer on the further side surface, radiation emitted by the optoelectronic semiconductor chip can be reflected particularly efficiently.

[0021] According to at least one embodiment of the optoelectronic component, the reflective layer is located on at least one further side surface of the optoelectronic semiconductor chip that extends transversely or perpendicularly to the main plane of carrier extension. This allows the reflective layer to cover part of the further side surface or the entire surface. Furthermore, the reflective layer can also be located on all of the further side surfaces. This increases the proportion of radiation emitted from the optoelectronic semiconductor chip on those sides that is reflected. This prevents the housing from being damaged by radiation.

[0022] According to at least one embodiment of the optoelectronic component, the reflective layer is in direct contact with the housing in at least a portion of it. The reflective layer can be in direct contact with the housing in at least a portion of the side surface of the optoelectronic semiconductor chip. The reflective layer can also be in direct contact with the housing, for example, across all sides of the side surface of the optoelectronic semiconductor chip. The idea behind the optoelectronic component described herein is to enable a more compact design. This allows for, for example, the realization of chip-scale package dimensions. This allows for the consistent placement of more optoelectronic components over a large area, thereby increasing brightness. Direct contact of the reflective layer with the housing allows for a more compact design of the optoelectronic component and also improves the stability of the reflective layer.

[0023] According to at least one embodiment of the optoelectronic component, the reflective layer comprises a metal, aluminum, rhodium, and / or a mirror. These materials have high reflectivity in the UV region. Therefore, a reflective layer made of one of these materials can reflect emitted UV radiation particularly efficiently, for example.

[0024] According to at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation in the ultraviolet region during operation. For this reason, the optoelectronic semiconductor chip can be, for example, a UV LED, a UV laser or a UV sapphire flip chip.

[0025] The idea of the optoelectronic component described here is that by arranging the reflective layer between the optoelectronic semiconductor chip and the housing, for example, the life of the housing made of a molded body made of a UV-unstable material can be extended by slowing down, preventing, or almost preventing the deterioration in the UV region induced by the emission of radiation.

[0026] According to at least one embodiment of the optoelectronic component, the reflective layer has a reflectivity of at least 40%, at least 50% or at least 80% in the UV region. The fact that the reflectivity of the reflective layer is at least 40%, at least 50%, or at least 80% better protects the housing material from UV radiation because the UV radiation colliding with the reflective layer is reflected and does not penetrate into the housing. Also, the proportion of the UV radiation emitted in the emission direction increases.

[0027] According to at least one embodiment of the optoelectronic component, the transmissivity of the reflective layer is at most 20%, for example at most 10%, especially at most 1%. Another term for transmissivity is transmittance. One advantage of this embodiment is that due to the low transmittance of the reflective layer, the UV radiation colliding with the reflective layer can be at least partly reflected and / or absorbed by the reflective layer. Thereby, the housing material can be better protected from UV radiation.

[0028] According to at least one embodiment of the optoelectronic component, the carrier can be electrically contacted on the side opposite to the optoelectronic semiconductor chip. Being electrically contactable means that the carrier can have at least one electrical contact on the side opposite to the optoelectronic semiconductor chip. The electrical contact can be electrically connected to the electrical contact of the optoelectronic semiconductor chip. The carrier can include vias that penetrate the carrier. The vias can connect, for example, the bottom side and the top side of the carrier perpendicular or transversely to the main extension plane of the carrier. Thus, it is preferable that electrical contact can be made with the optoelectronic semiconductor chip through the lower side of the carrier. This means that the optoelectronic component can be surface-mounted. In this case, no electrical contact is required on the radiation exit side of the optoelectronic semiconductor chip. This means that the entire upper surface of the optoelectronic semiconductor chip can be used for radiation emission. Thereby, efficient operation of the optoelectronic component becomes possible.

[0029] According to at least one embodiment of the optoelectronic component, an electrically insulating filler is disposed between the carrier and the optoelectronic semiconductor chip. The filler fills the gap formed by the electrical contact and the optoelectronic semiconductor chip to prevent short-circuiting of the optoelectronic component through the reflective layer. One characteristic of the filler is that it is particularly electrically insulating. The filler can be, for example, a filler compound made of or containing epoxy.

[0030] The filler can be at the same height as the end of the optoelectronic semiconductor chip. Alternatively, the filler can extend, for example, beyond the end of the optoelectronic semiconductor chip or cover a part of the side surface of the optoelectronic semiconductor chip.

[0031] For example, the reflective layer is in direct contact with the carrier and the filler.

[0032] According to at least one further embodiment of the optoelectronic component, the carrier comprises a ceramic material and vias, and the optoelectronic semiconductor chip is a sapphire flip chip. The sapphire flip chip can be designed to emit electromagnetic radiation in the UV-C region. In particular, a reflective layer, which may contain aluminum, can be applied directly to the side of the sapphire flip chip. A housing can surround the sapphire flip chip, thereby being directly adjacent to the reflective layer.

[0033] Furthermore, a method for manufacturing optoelectronic components is provided. Optoelectronic components are preferably manufactured by the method described herein. In other words, all features disclosed for manufacturing optoelectronic components also disclose all features disclosed for optoelectronic components, and vice versa.

[0034] According to at least one embodiment of a method for manufacturing optoelectronic semiconductor chips, the method includes a step of providing carriers.

[0035] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the method comprises a step of coating an optoelectronic semiconductor chip onto a carrier. The optoelectronic semiconductor chip can be attached to the carrier, for example, by soldering or adhesive.

[0036] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the method comprises a step of coating a reflective layer on at least one side surface of the optoelectronic semiconductor chip. This allows the reflective layer to be in direct contact with the carriers in at least part of the way. This means that the reflective layer can be coated on part of the carriers. The reflective layer can also be coated on all exposed surfaces, particularly the carriers, the optoelectronic semiconductor chip, and, if a temporary medium is present, the temporary medium.

[0037] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the method comprises a step in which the optoelectronic semiconductor chip is formed at least partially by a housing comprising a molded body. The housing may comprise, for example, a molded body made of a molding compound. The housing can be fitted to the semiconductor chip by molding, injection molding, or extrusion.

[0038] The idea behind the method described herein is that the coated reflective layer reduces the proportion of radiation emitted by the optoelectronic semiconductor chip that is absorbed by the surrounding housing, allowing it to instead be emitted in a preferred direction, thereby achieving higher brightness. Furthermore, the reflective layer can protect the housing material, at least partially, from the radiation of emitted electromagnetic radiation. This can extend the lifespan of the optoelectronic component and allow it to operate efficiently.

[0039] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor chip, a temporary medium is applied to the optoelectronic semiconductor chip before coating the reflective layer. The temporary medium may comprise a lacquer. The temporary medium can be applied to the optoelectronic semiconductor chip, for example, by vapor deposition, coating, sputtering, dispensing, and / or stamping. In particular, the temporary medium can be applied only to the side of the optoelectronic semiconductor chip opposite to the carrier. The temporary medium can be applied to the optoelectronic semiconductor chip before or after coating the carrier with the optoelectronic semiconductor chip.

[0040] The temporary medium can be removed, for example, by wet blasting. The advantage of using a temporary medium is that the optoelectronic semiconductor chip is protected on the side facing the medium.

[0041] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, a reflective layer is directly coated on at least one side surface of the optoelectronic semiconductor chip, the side surface extending transversely or perpendicularly to the main carrier plane. Methods for coating the reflective layer on the optoelectronic semiconductor chip include, for example, vapor deposition or sputtering. Direct contact of the reflective layer with the optoelectronic semiconductor chip minimizes, or at least reduces, the component size, resulting in higher brightness. The reflective layer can also be directly coated on at least one side surface using a standard process. The side surface extending transversely or perpendicularly to the main carrier plane is a surface not intended to emit electromagnetic radiation. Preferably, radiation emitted from the side surface is reflected by the reflective layer.

[0042] According to at least one embodiment of the method for manufacturing optoelectronic semiconductor chips, the reflective layer completely covers the carriers together with the optoelectronic semiconductor chip after coating.

[0043] Here, "completely" means that the reflective layer is applied as a continuous coating to all exposed surfaces of the carrier having the optoelectronic semiconductor chip, for example, by vapor deposition or sputtering. It can also mean that the reflective layer is placed on the sides of the optoelectronic semiconductor chip.

[0044] For example, the reflective layer is not removed from the carrier at least partially or completely after coating. The reflective layer can, for example, at least partially cover the carrier when the optoelectronic semiconductor chip is completed. For example, the reflective layer is in direct contact with the carrier.

[0045] The concept behind this method is to coat a reflective layer onto the surface of an optoelectronic semiconductor chip. The advantage of this embodiment is that the reflective layer is completely covered across the entire surface, eliminating the need to selectively coat individual areas. This simplifies the coating process.

[0046] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the housing completely encloses the optoelectronic semiconductor chip, at least on sides that extend transversely or perpendicularly to the main carrier-extending surface.

[0047] The housing may completely enclose only the sides of the optoelectronic semiconductor chip that extend transversely or perpendicularly to the main carrier plane. Furthermore, the upper side of the optoelectronic semiconductor chip that extends parallel to the main carrier plane may also be enclosed by the housing. Here, "enclosed" means that the housing is positioned around the optoelectronic semiconductor chip. It is also possible that only the reflective layer is located between the housing and the semiconductor chip.

[0048] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor chip, after forming with a housing, the side of the optoelectronic semiconductor chip opposite to the carrier is exposed. The temporary medium, part of the reflective layer, and / or part of the housing may be located on the side of the optoelectronic semiconductor chip opposite to the carrier. For example, on the side of the optoelectronic semiconductor chip opposite to the carrier, part of the reflective layer may be present first, with part of the housing on top of it. The housing and reflective layer can be removed from the side of the optoelectronic semiconductor chip opposite to the carrier by mechanical processes such as polishing or wet polishing. Alternatively, the optoelectronic semiconductor chip may be completely enclosed by the housing only in the lateral direction. In this case, for example, the temporary medium, and then part of the reflective layer, are applied to the side of the optoelectronic semiconductor chip opposite to the carrier. Subsequently, the side of the optoelectronic semiconductor chip opposite to the carrier can be exposed by, for example, wet polishing / wet blasting. An advantage of the above method is that, for example, masks are not required for the application of the reflective layer and housing. Therefore, the method steps for the reflective layer and the housing are not complicated. Furthermore, the coating can be easily removed along with the temporary medium.

[0049] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the side of the optoelectronic semiconductor chip opposite to the carrier is exposed before forming with a housing. Exposure may include removing a reflective layer, which can be removed by wet blasting. Subsequently, the optoelectronic semiconductor chip can be formed with a molding compound. According to this embodiment, the housing can be positioned to the edge of the exit or entrance surface of the optoelectronic semiconductor chip. The side of the optoelectronic semiconductor chip opposite to the carrier may not have a housing. An advantage of this embodiment is that less material is removed from the side of the optoelectronic semiconductor chip opposite to the carrier by wet blasting. Furthermore, this embodiment includes low consumption of housing material.

[0050] According to at least one embodiment of the method for manufacturing optoelectronic semiconductor chips, the method is applied to a plurality of further optoelectronic semiconductor chips on a carrier, thereby severing the carrier. Each of the further optoelectronic semiconductor chips may have a configuration similar to that of the optoelectronic semiconductor chip. Carrier severing can mean that the carrier having the optoelectronic semiconductor chip and the further optoelectronic semiconductor chips is singled out into a plurality of optoelectronic components. One idea of ​​this embodiment is to manufacture a plurality of optoelectronic components particularly efficiently. An advantage is that multiple optoelectronic components can be manufactured in parallel.

[0051] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, before coating the reflective layer, the gap formed between the carrier and the carrier-facing side of the optoelectronic semiconductor chip is at least partially filled with an electrically insulating filler. The filler can be inserted into the gap, for example, by a spraying process and / or with the help of capillary force. The filler prevents short circuits of the optoelectronic components through the reflective layer by filling the gap formed between the electrical contact and the optoelectronic semiconductor chip. The reflective layer can at least partially, and in particular completely, cover the side of the exposed filler when the reflective layer is subsequently coated. In particular, the reflective layer can be directly adjacent to the filler. For example, the reflective layer is not subsequently removed from the filler and / or carrier, at least partially or completely. Thus, the reflective layer can be directly adjacent to the filler in an optoelectronic semiconductor chip manufactured using the above method, for example. For example, the reflective layer completely covers the filler on the side exposed before coating the reflective layer. [Brief explanation of the drawing]

[0052] In the following, the optoelectronic components and methods for manufacturing optoelectronic components described herein will be described in more detail with reference to exemplary embodiments and accompanying drawings. [Figure 1] Figure 1 shows a schematic cross-sectional view of an optoelectronic component according to an exemplary embodiment. [Figure 2A] Figure 2A shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2B] Figure 2B shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2C] Figure 2C shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2D] Figure 2D shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2E] Figure 2E shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2F] Figure 2F shows the method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 3A] Figure 3A shows the steps of a manufacturing process for an optoelectronic component according to a more exemplary embodiment. [Figure 3B] Figure 3B shows the steps of the manufacturing process for optoelectronic components according to a further exemplary embodiment. [Figure 3C] Figure 3C shows the steps of the manufacturing process for an optoelectronic component according to a further exemplary embodiment. [Figure 3D] Figure 3D shows the steps of the manufacturing process for an optoelectronic component according to a further exemplary embodiment. [Figure 4A] Figure 4A shows a further embodiment of the method for manufacturing optoelectronic components. [Figure 4B] Figure 4B shows a further embodiment of the method for manufacturing optoelectronic components. [Modes for carrying out the invention]

[0053] Elements that are identical, similar, or have the same function are denoted by the same reference numeral in the drawings. The proportions between the drawings and the elements shown in the drawings do not necessarily represent exact proportions. Rather, individual elements may be exaggerated and shown larger in order to improve visibility and / or comprehension.

[0054] Figure 1 shows a cross-sectional view of an optoelectronic component 100. The optoelectronic component 100 comprises a carrier 1. The carrier 1 has two vias 6b that penetrate it. On the upper side 10 of the carrier 1, two contact regions 6a are arranged spaced apart from each other. On the lower side 9 of the carrier 1, there are two connection regions 6c that are spaced apart from each other. The contact regions 6a, vias 6b, and connection regions 6c together form an electrical contact 6. Each of the connection regions 6c on the lower side 9 of the carrier 1 is electrically connected to the contact region 6a on the upper side 10 of the carrier 1 via one of the vias 6b. The upper side 10 is located on the opposite side from the lower side 9 of the carrier 1.

[0055] The optoelectronic component 100 comprises an optoelectronic semiconductor chip 2 coated on a carrier 1. The optoelectronic semiconductor chip 2 can be designed, for example, to emit electromagnetic radiation in the ultraviolet region when in operation. The optoelectronic semiconductor chip 2 has two solder pads 8 on the side facing the carrier 1. Each solder pad 8 is electrically conductively connected to the contact area 6a of the carrier 1. An electrically nonconductive filler 5 is inserted into the gap between the optoelectronic semiconductor chip 2 and the carrier 1. As in the exemplary embodiment shown herein, the filler 5 can be at the same height as the edge of the optoelectronic semiconductor chip 2. Alternatively, the filler 5 can extend beyond the edge of the optoelectronic semiconductor chip 2, or cover a portion of the side surface 11 of the optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 comprises at least one side surface 11 and at least one further side surface 12 extending transversely or perpendicularly to the main extending surface of the carrier 1. In the cross-sectional view of Figure 1, side surface 11 and the further side surface 12 are visible. However, the optoelectronic semiconductor chip 2 may also have more sides 11, 12, for example, four sides in total. In the exemplary embodiment shown herein, a reflective layer 3 is directly coated onto sides 11, 12 of the optoelectronic semiconductor chip 2 and completely covers sides 11, 12. The reflective layer 3 comprises metal, aluminum, rhodium, and / or mirror. The reflective layer 3 only needs to have a reflectivity of at least 40% in the UV region. Furthermore, in this exemplary embodiment, the reflective layer 3 is partially directly on the filler 5 adjacent to sides 11, 12, and partially directly on the carrier 1. The reflective layer 3 covers the areas of the carrier 1 where the optoelectronic semiconductor chip 2 is not present. The optoelectronic semiconductor chip 2 is completely enclosed by a housing 4 that is in direct contact with the reflective layer 3 in the lateral direction x extending parallel to the main extending surface of the carrier 1. The housing 4 comprises a molded body. The housing 4 is positioned on the carrier 1.Therefore, a portion of the reflective layer 3 is positioned between the carrier 1 and the housing 4 in the vertical direction z, which extends perpendicularly to the main extending surface of the carrier 1.

[0056] Figures 2A to 2F show exemplary embodiments of the manufacturing method for the optoelectronic component 100.

[0057] In the first step, a carrier 1 is provided in Figure 2A. Two contact regions 6a are located on the upper side 10 of the carrier 1, and two connection regions 6c are located on the lower side 9 of the carrier 1. The connection regions 6c are connected to the contact regions 6a via conductive vias 6b through the carrier 1. Since Figures 2A to 2F are schematic cross-sectional views, the three parts of the carrier 1 shown are particularly connectable to each other.

[0058] In the next step, as shown in Figure 2B, the optoelectronic semiconductor chip 2 is soldered to the contact area 6a on the carrier 1 using a solder pad 8.

[0059] Figure 2C shows the optoelectronic component 100 after the method process of inserting a filler material 5 into the gap between the optoelectronic semiconductor chip 2 and the carrier 1. The filler material 5 prevents a short circuit of the optoelectronic semiconductor chip 2 through the reflective layer 3.

[0060] Next, as shown in Figure 2D, a reflective layer 3 is applied to the optoelectronic component 100. The reflective layer 3 covers the sides 11 and 12 of the optoelectronic semiconductor chip 2, the exposed surface of the filler material 5, and partially the upper side 10 of the carrier 1.

[0061] As shown in Figure 2E, the process then moves to the next step in the manufacturing method of the optoelectronic component 100, in which the optoelectronic semiconductor chip 2 is formed by the housing 4. This encloses the optoelectronic semiconductor chip 2, making it a mechanically robust component. The housing 4 completely covers the area of ​​carrier 1 where the optoelectronic semiconductor chip 2 is not present and the optoelectronic semiconductor chip 2. The housing 4 completely encloses the optoelectronic semiconductor chip 2 on its side surfaces 11 and 12 that extend transversely or perpendicularly to the main extending surface of carrier 1.

[0062] Figure 2F shows a cross-sectional view of the completed optoelectronic component 100. After coating the housing 4 in Figure 2E, the side of the optoelectronic semiconductor chip 2 opposite to the carrier 1 is exposed. The exposed surface is intended to emit radiation when the optoelectronic component 100 is operating.

[0063] Figures 3A to 3D, schematic cross-sectional views, show further exemplary embodiments of the method for manufacturing the optoelectronic component 100. Thus, the exemplary embodiments shown here follow the exemplary embodiments in Figures 2A to 2C.

[0064] Based on the process shown in Figures 2A to 2C, Figure 3A then shows how the temporary medium 7 is applied to the optoelectronic semiconductor chip 2. As a result, the temporary medium 7 is applied only to the side of the optoelectronic semiconductor chip 2 opposite to the carrier 1.

[0065] Next, as shown in Figure 3B, the reflective layer 3 is applied. The reflective layer 3 covers the temporary medium 7, the sides 11 and 12 of the optoelectronic semiconductor chip 2, the exposed surface of the filler material 5, and the exposed portion of the upper side 10 of the carrier 1.

[0066] Figure 3C shows a post-processing step in which the temporary medium 7 and the reflective layer 3 applied thereto are removed from the side of the optoelectronic semiconductor chip 2 opposite to the carrier 1.

[0067] Figure 3D shows the final method step for completing the optoelectronic component 100 by coating the housing 4 so as to form the optoelectronic semiconductor chip 2 laterally. The upper side of the housing 4 is at the same height as the upper side of the optoelectronic semiconductor chip 2.

[0068] Figure 4A shows yet another embodiment of the method for manufacturing the optoelectronic component 100. This involves performing the method steps shown in Figures 2A to 2F or Figures 3A to 3D, thereby carrying out the manufacturing method on the carrier 1 for a further number of optoelectronic semiconductor chips 2.

[0069] Figure 4B shows the method steps following Figure 4A, in which carrier 1 is cut. This allows for the manufacture of multiple optoelectronic components 100.

[0070] The features and exemplary embodiments described with respect to the figures can be combined with each other in further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described with respect to the figures may include, alternatively or additionally, further features as described in the general part.

[0071] The present invention is not limited to the description based on the exemplary embodiments described above. Rather, the present invention includes any novel features and any combination of features, and in particular includes any combination of features in the claims, even if such features or combinations themselves are not expressly described in the claims or embodiments.

[0072] This patent application claims priority to German Patent Application 10 2022 102 431.8, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0073] 1 Carrier 2 Optoelectronic semiconductor chips 3 reflective layer 4 Housing 5 Filling material 6. Electrical Contact 6a Contact area 6b Via 6c connection area 7 Temporary media 8 solder pads 9 Lower side 10 Upper side 11 Side view 12 Further Aspects 100 Optoelectronic Components x horizontal direction z vertical direction

Claims

1. Career (1) and, At least one optoelectronic semiconductor chip (2) disposed on the carrier (1), The device comprises a molded body and a housing (4) that at least partially encloses the optoelectronic semiconductor chip (2), A reflective layer (3) is disposed on at least one side surface (11) of the optoelectronic semiconductor chip (2). The carrier (1) has vias (6b), An electrically insulating filler material (5) is placed between the carrier (1) and the optoelectronic semiconductor chip (2). The reflective layer (3) is partially placed directly on the filler (5), The filler material (5) is flush with the edge of the optoelectronic semiconductor chip (2), The reflective layer (3) is in direct contact with the carrier (1), The reflective layer (3) is in direct contact with the optoelectronic semiconductor chip (2) in at least a portion of it. The reflective layer (3) and the housing (4) are flush with the upper surface of the optoelectronic semiconductor chip (2), forming an optoelectronic component (100).

2. The optoelectronic component (100) according to claim 1, wherein at least one side surface (11) on which the reflective layer (3) is arranged faces at least a portion of the housing (4).

3. The optoelectronic component (100) according to claim 1 or 2, wherein the reflective layer (3) completely covers at least one side surface (11) of the optoelectronic semiconductor chip (2).

4. The optoelectronic component (100) according to claim 1 or 2, wherein at least one side surface (11) of the optoelectronic semiconductor chip (2) extends transversely or perpendicularly to the main extending surface of the carrier (1).

5. The optoelectronic component (100) according to claim 1 or 2, wherein the optoelectronic semiconductor chip (2) has a reflective layer (3) on at least one further side surface (12) that extends transversely or perpendicularly to the main extending surface of the carrier (1).

6. The optoelectronic component (100) according to claim 1 or 2, wherein the reflective layer (3) is provided so as to be in direct contact with the housing (4) in at least a portion thereof.

7. The optoelectronic component (100) according to claim 1 or 2, wherein the reflective layer (3) is made of metal, aluminum, rhodium, and / or a mirror.

8. The optoelectronic component (100) according to claim 1 or 2, wherein the optoelectronic semiconductor chip (2) is adapted to emit electromagnetic radiation in the ultraviolet region when in operation.

9. The optoelectronic component (100) according to claim 1 or 2, wherein the reflective layer (3) has a reflectance of at least 40% in the UV region.

10. The optoelectronic component (100) according to claim 1 or 2, wherein the carrier (1) is electrically contactable on the side opposite to the optoelectronic semiconductor chip (2), and the carrier (1) is at least partially covered by the reflective layer (3).

11. The optoelectronic component (100) according to claim 1 or 2, wherein the filler (5) contains epoxy.

12. The process of providing a carrier (1), The process involves placing an optoelectronic semiconductor chip (2) on the carrier (1), The steps include: applying a reflective layer (3) to at least one side surface (11) of the optoelectronic semiconductor chip (2); The process includes a step of forming at least a portion of the optoelectronic semiconductor chip (2) with a housing (4) having a molded body, The carrier (1) is equipped with vias (6b), Prior to the step of applying the reflective layer (3), the gap formed between the carrier (1) and the optoelectronic semiconductor chip (2) facing the carrier (1) is filled at least partially with an electrically insulating filler (5). The reflective layer (3) is partially placed directly on the filler (5), The filler material (5) is flush with the edge of the optoelectronic semiconductor chip (2), The reflective layer (3) is in direct contact with the carrier (1), The reflective layer (3) is in direct contact with the optoelectronic semiconductor chip (2) in at least a portion of it. A method for manufacturing an optoelectronic component (100), wherein the reflective layer (3) and the housing (4) are flush with the upper surface of the optoelectronic semiconductor chip (2).

13. The method according to claim 12, wherein a temporary medium (7) is applied to the optoelectronic semiconductor chip (2) before the step of applying the reflective layer (3).

14. The method according to claim 12 or 13, wherein the reflective layer (3) is directly coated on at least one side surface (11) of the optoelectronic semiconductor chip (2), and the side surface (11) extends transversely or perpendicularly to the main extending surface of the carrier (1).

15. The method according to claim 12 or 13, wherein the reflective layer (3) completely covers the carrier (1) together with the optoelectronic semiconductor chip (2) after coating.

16. The method according to claim 12 or 13, wherein the housing completely encloses the optoelectronic semiconductor chip (2) at least on the side surface (11) that extends transversely or perpendicularly to the main extending surface of the carrier (1).

17. The method according to claim 12 or 13, wherein the side of the optoelectronic semiconductor chip (2) opposite to the carrier (1) is exposed after molding by the housing (4).

18. The method according to claim 12 or 13, wherein the method is performed on a plurality of further optoelectronic semiconductor chips (2) on the carrier (1) and the carrier (1) is cleaved.

19. The method according to claim 12 or 13, wherein the filler (5) is inserted into the gap by a spraying process and / or with the help of capillary force.

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