Backside gas leak bypass for bevel deposition reduction

Abstract

An exemplary substrate support assembly includes an electrostatic chuck body defining a substrate platform. The substrate platform may feature an upper surface. The platform may define a purge aperture. The platform may include a plurality of mesas disposed within an inner region of the upper surface. Each of the mesas may protrude upward from the upper surface. The platform may include a sealing band extending upward from the upper surface in a circumferential pattern and partially surrounding the inner region of the upper surface. The upper surfaces of the mesas and the sealing band may form a support surface for the substrate. The sealing band may define a number of gaps. The assembly may include a support stem coupled to the electrostatic chuck body, a heater embedded within the electrostatic chuck body, and a backside gas source coupled to the purge aperture in the support surface.

Claims

1. A substrate support assembly, An electrostatic chuck body for defining a substrate platform, The substrate platform is characterized by an upper surface, and the substrate platform defines a purge opening, The aforementioned substrate platform A plurality of mesas arranged in the internal region of the upper surface, each of which protrudes upward from the upper surface, A sealing band that extends upward from the upper surface in a circumferential pattern and partially surrounds the internal region of the upper surface, The upper surfaces of the plurality of mesa and the upper surface of the sealing band form a support surface for the substrate. The sealing band defines several gaps, The sealing band is characterized by a plurality of protruding segments that define a support sheet that supports the outer periphery of the substrate, The electrostatic chuck body, A support stem connected to the electrostatic chuck body, A heater embedded in the electrostatic chuck body, A gas source on the back side connected to the purge opening of the support surface, A substrate support assembly, including the substrate support assembly.

2. The substrate support assembly according to claim 1, wherein the upper surfaces of the plurality of mesas and the upper surface of the sealing band are at the same height.

3. The substrate support assembly according to claim 1, wherein the gaps are provided around the sealing band at regular angular intervals.

4. The substrate support assembly according to claim 1, wherein the support stem extends between the rear gas source and the opening, defining a fluid lumen connecting them.

5. The substrate support assembly according to claim 1, wherein the plurality of mesas are uniformly arranged around the internal region of the upper surface.

6. The sealing band is positioned on the substrate platform such that it defines a support sheet that supports the outer periphery of the substrate. A portion of the sealing band and a portion of each gap extend radially outward from the outermost edge of the support sheet. The substrate support assembly according to claim 1.

7. The substrate support assembly according to claim 1, wherein the sealing band is characterized by having a generally circular shape interrupted by several gaps.

8. The substrate support assembly according to claim 1, wherein adjacent pairs of the plurality of protruding segments are separated by each of the several gaps.

9. The substrate support assembly according to claim 8, wherein the size of each of the plurality of protruding segments is substantially equal to the size of each of the plurality of gaps.

10. The substrate support assembly according to claim 1, wherein the back gas source delivers a reactive purge gas.

11. The reactive purge gas is O ２ A substrate support assembly according to claim 10, comprising:

12. The substrate support assembly according to claim 1, wherein the peripheral edge of the sealing band and a portion of each of the several gaps extend radially outward beyond the peripheral edge of the substrate placed on the sealing band.

13. A substrate support assembly, An electrostatic chuck body for defining a substrate platform, The substrate platform is characterized by an upper surface, and the substrate platform defines a single purge opening, The aforementioned substrate platform A plurality of mesas arranged in the internal region of the upper surface, each of which protrudes upward from the upper surface, A sealing band that extends upward from the upper surface in a circumferential pattern and partially surrounds the internal region of the upper surface, The sealing band is characterized by a plurality of protruding segments that define a support sheet that supports the outer periphery of the substrate, The adjacent pairs of the aforementioned multiple protruding segments are separated by one of the multiple gaps. Sealing band and, The electrostatic chuck body, A support stem connected to the electrostatic chuck body, A backside gas source connected to the purge opening of the substrate platform, A substrate support assembly, including the substrate support assembly.

14. The substrate support assembly according to claim 13, wherein the gaps are provided around the sealing band at regular angular intervals.

15. The substrate support assembly according to claim 13, wherein the support stem extends between the rear gas source and the opening, defining a fluid lumen connecting them.

16. The substrate support assembly according to claim 13, wherein the plurality of mesa are uniformly arranged around the internal region of the upper surface.

17. The substrate support assembly according to claim 13, wherein the back gas source delivers a reactive purge gas.

18. The substrate support assembly according to claim 13, wherein the size of each of the plurality of protruding segments and the size of each of the plurality of gaps are substantially equal.

19. The substrate support assembly according to claim 13, wherein the peripheral edge of the sealing band and a portion of each of the plurality of gaps extend radially outward from the peripheral edge of the substrate placed on the sealing band.

20. A method for processing semiconductor substrates, The method involves using a chuck voltage to clamp a semiconductor substrate to the support surface of a substrate platform, The substrate platform is characterized by an upper surface and defines a single purge opening, The aforementioned substrate platform A plurality of mesas arranged in the internal region of the upper surface, each of which protrudes upward from the upper surface, A sealing band that extends upward from the upper surface in a circumferential pattern and partially surrounds the internal region of the upper surface, The sealing band is characterized by a plurality of protruding segments that define a support sheet supporting the outer periphery of the semiconductor substrate, The support surface is formed from the upper surfaces of the plurality of mesa and the upper surface of the sealing band. The sealing band defines several gaps that separate several protruding segments. Sealing band and, This includes clamping a semiconductor substrate, The reactive purge gas is flowed through the gaps on the underside of the semiconductor substrate. Methods that include...

21. The reactive purge gas is O ２ A method for processing a semiconductor substrate according to claim 20, including the method described in claim 20.

22. A method for processing a semiconductor substrate according to claim 20, wherein at least a portion of each gap and each protruding segment of the sealing band extends outward beyond the outer periphery of the semiconductor substrate.

23. A method for processing a semiconductor substrate according to claim 20, wherein the peripheral edge of the sealing band and a portion of each of the several gaps extend radially outward from the peripheral edge of the semiconductor substrate.

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