Substrate processing apparatus and substrate processing method

Abstract

A substrate processing device according to one aspect of the present disclosure comprises: a processing container which accommodates a plurality of substrates arranged in multiple stages; a processing gas supply pipe which extends in the arrangement direction of the plurality of substrates and supplies a processing gas into the processing container; and a pair of inert gas supply pipes which are provided at positions that sandwich the processing gas supply pipe in the circumferential direction of the substrates, extend in the arrangement direction, and supply an inert gas into the processing container, wherein the pair of inert gas supply pipes are configured to spray the inert gas toward the inner surface of the side wall of the processing container.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In a vertical heat treatment apparatus, a technique is known in which a pair of inert gas supply nozzles are arranged so as to sandwich a processing gas supply nozzle from both sides along the circumferential direction of a substrate (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for improving the uniformity of processing.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a processing container that houses a plurality of substrates arranged in multiple stages, a processing gas supply pipe that extends along the arrangement direction of the plurality of substrates and supplies a processing gas into the processing container, and a pair of inert gas supply pipes that are provided at positions sandwiching the processing gas supply pipe along the circumferential direction of the substrate and extend along the arrangement direction, and supply an inert gas into the processing container. The pair of inert gas supply pipes are configured to inject the inert gas toward the inner surface of the side wall of the processing container. The inner surface forms the flow of the inert gas in the circumferential direction of the substrate. .

Effects of the Invention

[0006] According to the present disclosure, the uniformity of processing is improved.

Brief Description of the Drawings

[0007] [Figure 1] Figure 1 is a longitudinal cross-sectional view showing a substrate processing apparatus according to the first embodiment. [Figure 2] Figure 2 is a cross-sectional view showing a substrate processing apparatus according to the first embodiment. [Figure 3] Figure 3 illustrates the orientation of the gas holes. [Figure 4] Figure 4 shows the horizontal flow of gas. [Figure 5] Figure 5 shows the horizontal flow of gas. [Figure 6] Figure 6 shows the horizontal flow of gas. [Figure 7] Figure 7 shows the vertical flow of gas. [Figure 8] Figure 8 is a cross-sectional view showing a substrate processing apparatus according to the second embodiment. [Figure 9] Figure 9 illustrates the orientation of the gas holes. [Figure 10] Figure 10 is a diagram illustrating the orientation of the gas holes. [Figure 11] Figure 11 is a diagram illustrating the orientation of the gas holes. [Figure 12] Figure 12 is a diagram illustrating the orientation of the gas holes. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [First Embodiment] Referring to Figures 1 to 7, the substrate processing apparatus 1 according to the first embodiment will be described. As shown in Figure 1, the substrate processing apparatus 1 is a batch-type apparatus that processes multiple (for example, 5 to 100) substrates W at once. The substrates W may be, for example, semiconductor wafers.

[0010] The substrate processing apparatus 1 comprises a processing container 10, a gas supply unit 30, an exhaust unit 40, a heating unit 50, and a control unit 90.

[0011] The processing container 10 is capable of reducing internal pressure. The processing container 10 accommodates a plurality of substrates W arranged in multiple stages along the vertical direction. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a cylindrical shape with a ceiling that is open at the lower end. The outer tube 12 has a cylindrical shape with a ceiling that is open at the lower end and covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 have a double-tube structure arranged coaxially. The inner tube 11 and the outer tube 12 are made of, for example, quartz.

[0012] As shown in Figure 2, the inner tube 11 has a first side wall 11a, a second side wall 11b, a third side wall 11c, and a fourth side wall 11d. The first side wall 11a, the second side wall 11b, the third side wall 11c, and the fourth side wall 11d are formed, for example, as a single unit.

[0013] The first side wall 11a extends along the circumferential direction of the substrate W. The first side wall 11a has an arc shape in a horizontal cross-section which is perpendicular to the arrangement direction of the multiple substrates W. A rectangular exhaust slit 15 is formed along the longitudinal direction (vertical direction) of a portion of the circumferential direction of the first side wall 11a. The gas in the inner tube 11 is discharged through the exhaust slit 15 into the space P1 between the inner tube 11 and the outer tube 12. The vertical length of the exhaust slit 15 is the same as the vertical length of the boat 16, or it is formed to extend vertically longer than the vertical length of the boat 16.

[0014] The second side wall 11b is located outward in the radial direction of the substrate W than the first side wall 11a and extends along the circumferential direction of the substrate W. The second side wall 11b is provided at a position different from that of the first side wall 11a in the circumferential direction of the substrate W. The second side wall 11b has an arc shape in a horizontal cross section. In the horizontal cross section, the radius R2 of the arc of the second side wall 11b is larger than the radius R1 of the arc of the first side wall 11a. The difference in length between the radius R2 and the radius R1 is larger than the diameter of each gas supply pipe (the first inert gas supply pipe 31a, the processing gas supply pipe 32a, the second inert gas supply pipe 33a) described later, for example. In this case, each gas supply pipe can be accommodated in the nozzle accommodating portion 13 described later. Therefore, since there is no need to provide a gas supply pipe between the first side wall 11a and the substrate W, the gap between the inner surface of the first side wall 11a and the outer end of the substrate W can be narrowed. As a result, it is possible to suppress an increase in the film thickness at the peripheral portion of the substrate W. Further, since the volume inside the inner pipe 11 becomes small, the gas consumption can be reduced. The circumferential length of the second side wall 11b is shorter than the circumferential length of the first side wall 11a, for example. The circumferential length of the second side wall 11b is determined according to the number of gas supply pipes accommodated in the nozzle accommodating portion 13, for example. The second side wall 11b is provided at a position facing the exhaust slit 15 with the center O of the inner pipe 11 (substrate W) interposed therebetween.

[0015] The third side wall 11c connects one end of the first side wall 11a and one end of the second side wall 11b. The third side wall 11c is continuous with one end of the first side wall 11a and one end of the second side wall 11b. As shown in FIG. 3, the angle θ1 formed by the second side wall 11b and the third side wall 11c may be an obtuse angle, for example. In this case, the inert gas jetted from the first inert gas supply pipe 31a described later easily forms a flow along the inner surface of the first side wall 11a (a flow along the circumferential direction of the substrate W). The angle θ1 may be, for example, 100 degrees or more and 150 degrees or less. In this case, the third side wall 11c can function as a flow rectifying plate in the peripheral direction of the substrate W. As a result, the inert gas jetted from the first inert gas supply pipe 31a described later can be efficiently introduced in the circumferential direction of the substrate W, and the use amount of the inert gas in a predetermined process can be reduced.

[0016] The angle θ1 is more preferably, for example, 120 degrees or more and 130 degrees or less. In this case, the third side wall 11c can enhance the rectifying effect in the peripheral direction of the substrate W.

[0017] The fourth side wall 11d connects the other end of the first side wall 11a and the other end of the second side wall 11b. The fourth side wall 11d is continuous with the other end of the first side wall 11a and the other end of the second side wall 11b. As shown in FIG. 3, the angle θ2 formed between the second side wall 11b and the fourth side wall 11d may be, for example, an obtuse angle. In this case, the inert gas ejected from the second inert gas supply pipe 33a described later is likely to form a flow (a flow along the circumferential direction of the substrate W) along the inner surface of the first side wall 11a. The angle θ2 may be, for example, 100 degrees or more and 150 degrees or less. In this case, the fourth side wall 11d can function as a rectifying plate in the peripheral direction of the substrate W. As a result, the inert gas ejected from the second inert gas supply pipe 33a described later can be efficiently introduced in the circumferential direction of the substrate W, and the amount of inert gas used in a predetermined process can be reduced.

[0018] The angle θ2 is more preferably, for example, 120 degrees or more and 130 degrees or less. In this case, the fourth side wall 11d can enhance the rectifying effect in the peripheral direction of the substrate W.

[0019] The second side wall 11b, the third side wall 11c, and the fourth side wall 11d form a nozzle accommodating portion 13 for accommodating each gas supply pipe by protruding outward in the radial direction of the substrate W from the first side wall 11a.

[0020] The lower end of the processing container 10 is supported by a cylindrical manifold 17. The manifold 17 is formed of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer tube 12. A seal member 19 such as an O-ring is provided between the flange 18 and the lower end of the outer tube 12. Thereby, the inside of the outer tube 12 is maintained airtight.

[0021] An annular support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner pipe 11. A lid 21 is airtightly attached to the opening at the lower end of the manifold 17 via a sealing member 22 such as an O-ring. This airtightly closes the opening at the lower end of the processing container 10, i.e., the opening of the manifold 17. The lid 21 is made of, for example, stainless steel.

[0022] A rotating shaft 24 is provided through the center of the lid 21 via a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported by an arm 25A of a lifting mechanism 25, which consists of a boat elevator.

[0023] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 that holds substrates W is placed on the rotating plate 26 via a quartz warming stand 27. The boat 16 rotates by rotating the rotating shaft 24. The boat 16 moves up and down together with the lid 21 by raising and lowering the lifting mechanism 25. This allows the boat 16 to be inserted into and removed from the processing container 10. The boat 16 can be housed inside the processing container 10. The boat 16 holds multiple substrates W in a substantially horizontal position with vertical spacing between them.

[0024] The gas supply unit 30 includes a first inert gas supply unit 31, a processing gas supply unit 32, and a second inert gas supply unit 33.

[0025] The first inert gas supply unit 31 includes a first inert gas supply pipe 31a inside the processing container 10 and a first inert gas supply path 31b outside the processing container 10. The first inert gas supply path 31b is equipped with a first inert gas source 31c, a mass flow controller 31d, and a valve 31e, arranged in order from upstream to downstream in the gas flow direction. As a result, the supply timing of the inert gas from the first inert gas source 31c is controlled by the valve 31e, and the flow rate is adjusted to a predetermined level by the mass flow controller 31d. The inert gas flows from the first inert gas supply path 31b into the first inert gas supply pipe 31a and is injected into the processing container 10 from the first inert gas supply pipe 31a. The inert gas is, for example, nitrogen (N2) gas. The inert gas may also be, for example, argon (Ar) gas.

[0026] The processing gas supply unit 32 includes a processing gas supply pipe 32a inside the processing container 10 and a processing gas supply path 32b outside the processing container 10. The processing gas supply path 32b is equipped with a processing gas source 32c, a mass flow controller 32d, and a valve 32e, arranged in order from upstream to downstream in the gas flow direction. As a result, the processing gas from the processing gas source 32c is supplied at a timing controlled by the valve 32e and adjusted to a predetermined flow rate by the mass flow controller 32d. The processing gas flows from the processing gas supply path 32b into the processing gas supply pipe 32a and is injected into the processing container 10 from the processing gas supply pipe 32a. The processing gas is, for example, a silicon raw material gas. The processing gas may also be, for example, a metal raw material gas. The processing gas may also be, for example, an oxidizing gas or a nitriding gas.

[0027] The second inert gas supply unit 33 includes a second inert gas supply pipe 33a inside the processing container 10 and a second inert gas supply path 33b outside the processing container 10. The second inert gas supply path 33b is equipped with a second inert gas source 33c, a mass flow controller 33d, and a valve 33e in order from upstream to downstream in the gas flow direction. As a result, the supply timing of the inert gas from the second inert gas source 33c is controlled by the valve 33e, and the flow rate is adjusted to a predetermined level by the mass flow controller 33d. The inert gas flows from the second inert gas supply path 33b into the second inert gas supply pipe 33a and is injected into the processing container 10 from the second inert gas supply pipe 33a. The inert gas may be the same as, for example, the inert gas from the first inert gas source 31c.

[0028] Each gas supply pipe (first inert gas supply pipe 31a, processing gas supply pipe 32a, second inert gas supply pipe 33a) is fixed to the manifold 17. Each gas supply pipe is made of, for example, quartz. Each gas supply pipe is an L-shaped gas supply pipe that extends linearly vertically in the vicinity of the second side wall 11b in the nozzle housing section 13, and then bends in an L-shape within the manifold 17 to extend horizontally and penetrate the manifold 17. Each gas supply pipe is arranged in a line with a gap between them along the circumferential direction of the substrate W and is formed at the same height as the others.

[0029] The first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a are provided in this order along the circumferential direction of the substrate W, starting from near the exhaust port 41. The pair of inert gas supply pipes (first inert gas supply pipe 31a and second inert gas supply pipe 33a) are provided along the circumferential direction of the substrate W, sandwiching the processing gas supply pipe 32a. The first inert gas supply pipe 31a and the second inert gas supply pipe 33a are configured to inject inert gas toward the inner surface of the second side wall 11b, the third side wall 11c, or the fourth side wall 11d. In this case, the inert gas bounces off the inner surface of the second side wall 11b, the third side wall 11c, or the fourth side wall 11d, efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a. Therefore, a small flow rate of inert gas can relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a, thereby suppressing the flow of processing gas into the gap. As a result, by reducing the amount of inert gas used, the environmental burden is reduced, while promoting the supply of processing gas to the vicinity of the center of each substrate W, thereby reducing the difference in the amount of processing gas supplied between the peripheral and central parts of each substrate W. Consequently, the in-plane uniformity of the processing is improved.

[0030] The first inert gas supply pipe 31a injects inert gas so that, for example, the inert gas is supplied into the inner tube 11 along the inner surface of the third side wall 11c. The second inert gas supply pipe 33a injects inert gas so that, for example, the inert gas is supplied into the inner tube 11 along the inner surface of the fourth side wall 11d. The processing gas supply pipe 32a is configured to inject processing gas toward, for example, the inner surface of the second side wall 11b. The processing gas supply pipe 32a may not inject processing gas toward the second side wall 11b, but may be configured to inject processing gas directly toward, for example, the center O of the substrate W.

[0031] Multiple gas holes 31f (first gas holes) are provided in the portion of the first inert gas supply pipe 31a located inside the inner pipe 11. Multiple gas holes 32f are provided in the portion of the processing gas supply pipe 32a located inside the inner pipe 11. Multiple gas holes 33f (second gas holes) are provided in the portion of the second inert gas supply pipe 33a located inside the inner pipe 11. Each gas hole (gas hole 31f, gas hole 32f, gas hole 33f) is provided at predetermined intervals along the extending direction of each gas supply pipe. Each gas hole injects gas horizontally. The spacing between each gas hole is set to be the same as, for example, the spacing between the substrates W held in the boat 16. The height position of each gas hole is set to be the same as, for example, the same as the position of each substrate W.

[0032] As shown in Figure 3, let ray L1 be the ray extending radially outward from the center of the first inert gas supply pipe 31a to the substrate W. Let ray L2 be the ray extending from the center of the first inert gas supply pipe 31a to the boundary between the second side wall 11b and the third side wall 11c. Let ray L3 be the ray extending from the center of the first inert gas supply pipe 31a to the boundary between the first side wall 11a and the third side wall 11c.

[0033] As shown in Figure 4, each gas hole 31f may be located on the side of the second side wall 11b between the semi-linear L1 and semi-linear L2 of the pipe wall (first pipe wall) of the first inert gas supply pipe 31a (opposite side from the substrate W side). In other words, each gas hole 31f may be located in the region of the pipe wall (first pipe wall) of the first inert gas supply pipe 31a that is sandwiched between the semi-linear L1 and semi-linear L2. This allows the first inert gas supply pipe 31a to inject inert gas toward the region of the second side wall 11b sandwiched between the semi-linear L1 and semi-linear L2 (solid arrows in Figure 4). In this case, the inert gas injected from each gas hole 31f bounces off the inner surface of the second side wall 11b, forming a gas flow F11 that flows along the inner surface of the third side wall 11c and the inner surface of the first side wall 11a.

[0034] Since the gas flow F11 flows along the third sidewall 11c, which has a flow-rectifying effect in the direction of the substrate W periphery, the inert gas can be efficiently introduced to the periphery of the substrate W. As a result, the amount of inert gas used can be optimized while selectively diluting the concentration of the processing gas.

[0035] Furthermore, if the arrangement of each gas hole 31f on the tube wall (first tube wall) is in the region sandwiched between the semi-linear L1 and the semi-linear L2, a gas flow F12 directed toward the processing gas supply pipe 32a can be formed in addition to the gas flow F11. Since the gas flow F12 can dilute the processing gas in the processing gas injection region, the overall processing gas concentration within the plane of the substrate W can be diluted. This makes it possible to gradually adjust the in-plane distribution of film thickness.

[0036] Here, if the direction of gas injection from each gas hole 31f is set to the semi-linear L2 side rather than the semi-linear L1 side, a gas flow F11 can be formed more actively, and thus the concentration of the processing gas at the peripheral edge of the substrate W can be selectively diluted efficiently.

[0037] Furthermore, if the gas injection direction from each gas hole 31f is set to the semi-linear L1 side rather than the semi-linear L2 side, a more active gas flow F12 can be formed, thereby increasing the overall dilution effect of the processed gas concentration.

[0038] In addition, when an inert gas is injected into the region between the semi-linear L1 and semi-linear L2 of each gas hole 31f, the injected inert gas can be diffused in the vertical direction as shown in Figure 7. By forming a diffusion region of the inert gas in the vertical direction (inter-plane direction) on both sides where the processing gas is injected, inter-plane uniformity can also be improved.

[0039] Figure 4 also shows the case where each gas hole 31f is located at the intersection of the first inert gas supply pipe 31a with a semi-linear L1 (dashed arrow in Figure 4). In this case, as shown in Figure 7, the inert gas injected from each gas hole 31f bounces off the inner surface of the second side wall 11b, improving its vertical diffusion. This improves the inter-surface uniformity of the treatment.

[0040] As shown in Figure 5, each gas hole 31f may be located on the side of the third side wall 11c between the semi-linear L2 and semi-linear L3 of the wall of the first inert gas supply pipe 31a. In this case, the inert gas injected from each gas hole 31f bounces off the inner surface of the third side wall 11c, forming a gas flow F13 that flows along the inner surface of the third side wall 11c and the inner surface of the first side wall 11a. On the other hand, almost no gas flow is formed toward the processing gas supply pipe 32a. The gas flow F13 selectively dilutes the concentration of the processing gas at the periphery of the substrate W. This allows for a steep adjustment of the in-plane distribution of the processing. Therefore, it is particularly effective when it is desired to suppress the thickening of the film thickness at the periphery of the substrate W. Also, as shown in Figure 7, the inert gas injected from each gas hole 31f bounces off the inner surface of the third side wall 11c, improving its diffusivity in the vertical direction. Therefore, the inter-plane uniformity of the processing is improved.

[0041] As shown in Figure 6, each gas hole 31f may be located at the intersection of the pipe wall of the first inert gas supply pipe 31a with the semi-linear L2. In this case, an effect intermediate between that of the case shown in Figure 4 and the case shown in Figure 5 can be obtained.

[0042] As shown in Figure 3, let ray L4 be the ray extending radially outward from the center of the second inert gas supply pipe 33a to the substrate W. Let ray L5 be the ray extending from the center of the second inert gas supply pipe 33a to the boundary between the second side wall 11b and the fourth side wall 11d. Let ray L6 be the ray extending from the center of the second inert gas supply pipe 33a to the boundary between the first side wall 11a and the fourth side wall 11d.

[0043] As shown in Figure 4, each gas hole 33f may be located on the side of the second side wall 11b between the semi-linear L4 and semi-linear L5 of the pipe wall (second pipe wall) of the second inert gas supply pipe 33a (opposite side from the substrate W side). In other words, each gas hole 33f may be located in the region of the pipe wall (second pipe wall) of the second inert gas supply pipe 33a that is sandwiched between the semi-linear L4 and semi-linear L5. This allows the second inert gas supply pipe 33a to inject inert gas toward the region of the second side wall 11b sandwiched between the semi-linear L4 and semi-linear L5 (solid arrows in Figure 4). In this case, the inert gas injected from each gas hole 33f bounces off the inner surface of the second side wall 11b, forming a gas flow F21 that flows along the inner surface of the fourth side wall 11d and the inner surface of the first side wall 11a.

[0044] Since the gas flow F21 flows along the fourth sidewall 11d, which has a rectifying effect in the direction of the substrate W periphery, the inert gas can be efficiently introduced to the periphery of the substrate W. As a result, the amount of inert gas used can be optimized while selectively diluting the concentration of the processing gas.

[0045] Furthermore, if the arrangement of each gas hole 33f on the tube wall (second tube wall) is in the region sandwiched between the semi-linear L4 and semi-linear L5, a gas flow F22 directed toward the processing gas supply pipe 32a can be formed in addition to the gas flow F21. Since the gas flow F22 can dilute the processing gas in the processing gas injection region, the processing gas concentration in the plane of the substrate W can be diluted overall. This makes it possible to gently adjust the in-plane distribution of film thickness.

[0046] Here, if the direction of gas injection from each gas hole 33f is set to the semi-linear L5 side rather than the semi-linear L4, a gas flow F21 can be formed more actively, and thus the concentration of the processing gas at the peripheral edge of the substrate W can be selectively diluted efficiently.

[0047] Furthermore, if the gas injection direction from each gas hole 33f is set to the semi-linear L4 side rather than the semi-linear L5 side, a more active gas flow F22 can be formed, thereby increasing the overall dilution effect of the processed gas concentration.

[0048] In addition, when an inert gas is injected into the region between the semi-linear L1 and semi-linear L2 of each gas hole 33f, the injected inert gas can be diffused in the vertical direction as shown in Figure 7. By forming a diffusion region of the inert gas in the vertical direction (inter-plane direction) on both sides where the processing gas is injected in this way, inter-plane uniformity can also be improved.

[0049] Figure 4 also shows the case where each gas hole 33f is located at the intersection of the semi-linear L4 on the wall of the second inert gas supply pipe 33a (dashed arrow in Figure 4). In this case, as shown in Figure 7, the inert gas injected from each gas hole 33f bounces off the inner surface of the second side wall 11b, improving its vertical diffusion. This improves the inter-surface uniformity of the treatment.

[0050] As shown in Figure 5, each gas hole 33f may be located on the side of the fourth side wall 11d between the semi-linear L5 and semi-linear L6 of the wall of the second inert gas supply pipe 33a. In this case, the inert gas injected from each gas hole 33f bounces off the inner surface of the fourth side wall 11d, forming a gas flow F23 that flows along the inner surface of the fourth side wall 11d and the inner surface of the first side wall 11a. On the other hand, almost no gas flow is formed toward the processing gas supply pipe 32a. The gas flow F23 selectively dilutes the concentration of the processing gas at the periphery of the substrate W. This allows for a steep adjustment of the in-plane distribution of the processing. Therefore, it is particularly effective when it is desired to suppress the thickening of the film thickness at the periphery of the substrate W. As shown in Figure 7, the inert gas injected from each gas hole 33f bounces off the inner surface of the fourth side wall 11d, improving its diffusivity in the vertical direction. Therefore, the inter-plane uniformity of the processing is improved.

[0051] As shown in Figure 6, each gas hole 33f may be located at the intersection of the semi-linear L5 with the wall of the second inert gas supply pipe 33a. In this case, an effect intermediate between that of the case shown in Figure 4 and the case shown in Figure 5 can be obtained.

[0052] In Figures 4 to 6, when the processing gas is injected from each gas hole 32f toward the inner surface of the second side wall 11b, the diffusion range of the gas immediately after injection from each gas hole 31f, 32f, and 33f is shown as regions A11, A12, and A13, respectively.

[0053] The gas supply unit 30 may mix multiple types of gases and inject the mixed gas from a single supply pipe. Each gas supply pipe (first inert gas supply pipe 31a, processing gas supply pipe 32a, second inert gas supply pipe 33a) may have different shapes and arrangements from each other. For example, one or both of the first inert gas supply pipe 31a and the second inert gas supply pipe 33a may be a folded-type gas supply pipe that is bent in an L-shape at the bottom and folded back in a U-shape at the top and extends downward. For example, the processing gas supply pipe 32a may be a folded-type gas supply pipe.

[0054] The gas supply unit 30 may have other gas supply pipes in addition to the first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a. For example, multiple processing gas supply pipes may be provided between the first inert gas supply pipe 31a and the second inert gas supply pipe 33a. The multiple processing gas supply pipes may be gas supply pipes that supply the same processing gas, or gas supply pipes that supply different processing gases. For example, one or more inert gas supply pipes may be further provided between the first inert gas supply pipe 31a and the processing gas supply pipe 32a. For example, one or more inert gas supply pipes may be further provided between the processing gas supply pipe 32a and the second inert gas supply pipe 33a.

[0055] As indicated by the arrows in Figure 2, the exhaust section 40 discharges gas from inside the inner pipe 11 through the exhaust slit 15 and exhausts the gas through the space P1 between the inner pipe 11 and the outer pipe 12 to the exhaust port 41. The exhaust port 41 is formed on the upper side wall of the manifold 17, above the support section 20. An exhaust passage 42 is connected to the exhaust port 41. A pressure regulating valve 43 and a vacuum pump 44 are sequentially installed in the exhaust passage 42 to exhaust the inside of the processing container 10.

[0056] The heating section 50 is provided around the outer tube 12. The heating section 50 is provided, for example, on the base plate 28. The heating section 50 has a cylindrical shape so as to cover the outer tube 12. The heating section 50 includes, for example, a heater and heats each substrate W in the processing container 10.

[0057] The control unit 90 controls the operation of each part of the substrate processing apparatus 1, thereby processing multiple substrates W housed in the processing container 10 at once. The control unit 90 may be, for example, a computer. The computer program that controls the operation of each part of the substrate processing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, compact disk, hard disk, flash memory, DVD, etc.

[0058] Next, a substrate processing method performed using the substrate processing apparatus 1 according to the embodiment will be described. The substrate processing method according to the embodiment is performed by the control unit 90 controlling the operation of each part of the substrate processing apparatus 1.

[0059] First, a boat 16 holding multiple substrates W is raised from below into the processing container 10, which has been pre-temperature-adjusted, and the inside of the processing container 10 is sealed by closing the opening at the lower end of the processing container 10 with a lid 21. Next, the inside of the processing container 10 is evacuated by the exhaust unit 40 to maintain the process pressure, the substrate temperature is raised by the heating unit 50 to maintain the process temperature, and the boat 16 is rotated by the rotation of the rotating shaft 24.

[0060] Next, the control unit 90 injects processing gas into the processing container 10 from the processing gas supply pipe 32a, while simultaneously injecting inert gas from the first inert gas supply pipe 31a and the second inert gas supply pipe 33a toward the inner surface of the second side wall 11b, the third side wall 11c, or the fourth side wall 11d. This allows each substrate W to be processed at once. At this time, as the inert gas flows along the third side wall 11c or the fourth side wall 11d, the inert gas is efficiently supplied to the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a. As a result, the pressure in the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a can be relatively increased with a small flow rate of inert gas, and the inflow of processing gas into the gap can be suppressed. As a result, the environmental burden can be reduced by reducing the amount of inert gas used, while promoting the supply of processing gas to the vicinity of the center of each substrate W, thereby reducing the difference in the amount of processing gas supplied between the periphery and the center of each substrate W.

[0061] The flow rate of the inert gas injected from the first inert gas supply pipe 31a may be less than, for example, the flow rate of the processing gas injected from the processing gas supply pipe 32a. The flow rate of the inert gas injected from the second inert gas supply pipe 33a may be less than, for example, the flow rate of the processing gas injected from the processing gas supply pipe 32a. In other words, according to the substrate processing apparatus 1 of this embodiment, the inert gas rectification effect of the third side wall 11c or the fourth side wall 11d makes it possible to set the flow rates of the inert gas in the first inert gas supply pipe 31a and the second inert gas supply pipe 33a to be lower than the flow rate of the processing gas.

[0062] Next, the pressure inside the processing container 10 is increased to atmospheric pressure, and then the temperature inside the processing container 10 is lowered to the discharge temperature. After that, the boat 16 holding the multiple processed substrates W is discharged from the processing container 10.

[0063] [Second Embodiment] Referring to Figures 8 to 12, the substrate processing apparatus 1X according to the second embodiment will be described. The substrate processing apparatus 1X differs from the substrate processing apparatus 1 in that it does not have a nozzle housing section 13. Other configurations may be the same as those of the substrate processing apparatus 1. The following description will focus on the differences from the substrate processing apparatus 1.

[0064] As shown in Figure 8, the substrate processing apparatus 1X includes a processing container 10X having an inner tube 11X and an outer tube 12, instead of the processing container 10. The inner tube 11X has a fifth side wall 11e.

[0065] The fifth side wall 11e extends along the circumferential direction of the substrate W. The fifth side wall 11e has a cylindrical shape. A rectangular exhaust slit 15 is formed along the longitudinal direction (up and down direction) of a portion of the fifth side wall 11e in the circumferential direction. The radius R1X of the fifth side wall 11e is greater than the radius R1 of the arc of the first side wall 11a of the substrate processing apparatus 1. This allows each gas supply pipe (first inert gas supply pipe 31a, processing gas supply pipe 32a, second inert gas supply pipe 33a) to be positioned between the outer end of the substrate W and the inner surface of the fifth side wall 11e.

[0066] The first inert gas supply pipe 31a and the second inert gas supply pipe 33a are configured to inject inert gas toward the inner surface of the fifth side wall 11e. In this case, the inert gas bounces off the inner surface of the fifth side wall 11e, efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the fifth side wall 11e. As a result, a small flow rate of inert gas can relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the fifth side wall 11e, thereby suppressing the flow of processing gas into the gap. Consequently, by reducing the amount of inert gas used, the environmental burden can be reduced, while promoting the supply of processing gas to the vicinity of the center of each substrate W, thereby reducing the difference in the amount of processing gas supplied between the periphery and the center of each substrate W.

[0067] The inert gas injected from each gas hole 31f and each gas hole 33f bounces off the inner surface of the fifth side wall 11e, forming a gas flow along the inner surface of the fifth side wall 11e away from the processing gas supply pipe 32a and a gas flow toward the processing gas supply pipe 32a. The gas flow along the inner surface of the fifth side wall 11e away from the processing gas supply pipe 32a selectively dilutes the concentration of the processing gas at the periphery of the substrate W. The gas flow toward the processing gas supply pipe 32a dilutes the concentration of the processing gas throughout the plane of the substrate W.

[0068] As shown in Figure 9, let ray L7 be the semicircle extending radially outward from the center of the first inert gas supply pipe 31a to the substrate W. Let ray L8 be the semicircle extending from the center of the first inert gas supply pipe 31a to the center of the processing gas supply pipe 32a. Let ray L9 be the semicircle extending perpendicularly to ray L7 and away from the processing gas supply pipe 32a from the center of the first inert gas supply pipe 31a.

[0069] In this case, as shown in Figure 10, each gas hole 31f may be located on the side of the fifth side wall 11e between the semi-linear L7 and semi-linear L8 of the tube wall of the first inert gas supply pipe 31a (opposite side from the substrate W side). In other words, each gas hole 31f may be located in the region of the tube wall (first tube wall) of the first inert gas supply pipe 31a that is sandwiched between the semi-linear L7 and semi-linear L8. In this case, the gas flow toward the processing gas supply pipe 32a becomes larger than the gas flow away from the processing gas supply pipe 32a along the inner surface of the fifth side wall 11e. Therefore, the in-plane distribution of the processing can be adjusted gently.

[0070] Furthermore, as shown in Figure 11, each gas hole 31f may be located on the side of the fifth side wall 11e between the semi-linear L7 and semi-linear L9 of the tube wall of the first inert gas supply pipe 31a (opposite side from the substrate W side). In other words, each gas hole 31f may be located in the region of the tube wall (first tube wall) of the first inert gas supply pipe 31a that is sandwiched between the semi-linear L7 and semi-linear L9. In this case, the gas flow along the inner surface of the fifth side wall 11e away from the processing gas supply pipe 32a becomes larger than the gas flow toward the processing gas supply pipe 32a. This allows for a steep adjustment of the in-plane distribution of the processing. Therefore, this is particularly effective when it is desired to suppress the thickening of the film thickness at the peripheral edge of the substrate W.

[0071] Furthermore, as shown in Figure 12, each gas hole 31f may be located at the intersection of the first inert gas supply pipe 31a with a semi-linear L7 on the pipe wall. In this case, the gas flow along the inner surface of the fifth side wall 11e away from the processing gas supply pipe 32a and the gas flow toward the processing gas supply pipe 32a become roughly equal. Therefore, an effect intermediate between that shown in Figure 10 and that shown in Figure 11 can be obtained.

[0072] As shown in Figure 9, let ray L10 be the semicircle extending radially outward from the center of the second inert gas supply pipe 33a to the substrate W. Let ray L11 be the semicircle extending from the center of the second inert gas supply pipe 33a to the center of the processing gas supply pipe 32a. Let ray L12 be the semicircle extending perpendicularly to ray L10 and away from the processing gas supply pipe 32a from the center of the second inert gas supply pipe 33a.

[0073] In this case, as shown in Figure 10, each gas hole 33f may be located on the side of the fifth side wall 11e between the semi-linear L10 and semi-linear L11 of the wall of the second inert gas supply pipe 33a (opposite side from the substrate W side). In other words, each gas hole 33f may be located in the region of the wall of the second inert gas supply pipe 33a (second wall) sandwiched between the semi-linear L10 and semi-linear L11. In this case, the gas flow toward the processing gas supply pipe 32a becomes larger than the gas flow away from the processing gas supply pipe 32a along the inner surface of the fifth side wall 11e. Therefore, the in-plane distribution of the processing can be adjusted gently.

[0074] Furthermore, as shown in Figure 11, each gas hole 33f may be located on the side of the fifth side wall 11e between the semi-linear L10 and semi-linear L12 of the wall of the second inert gas supply pipe 33a (opposite side from the substrate W side). In other words, each gas hole 33f may be located in the region of the wall of the second inert gas supply pipe 33a (second wall) sandwiched between the semi-linear L10 and semi-linear L12. In this case, the gas flow along the inner surface of the fifth side wall 11e away from the processing gas supply pipe 32a becomes larger than the gas flow toward the processing gas supply pipe 32a. This allows for a steep adjustment of the in-plane distribution of the processing. Therefore, this is particularly effective when it is desired to suppress the thickening of the film thickness at the peripheral edge of the substrate W.

[0075] Furthermore, as shown in Figure 12, each gas hole 33f may be located at the intersection of the semi-linear L10 with the wall of the second inert gas supply pipe 33a. In this case, the gas flow away from the processing gas supply pipe 32a along the inner surface of the fifth side wall 11e and the gas flow toward the processing gas supply pipe 32a become roughly equal. Therefore, an effect intermediate between that shown in Figure 10 and that shown in Figure 11 can be obtained.

[0076] Figures 10 to 12 show an example where the processing gas is injected from each gas hole 32f toward the inner surface of the fifth side wall 11e. However, the system is not limited to this, and the processing gas supply pipe 32a may be configured not to inject the processing gas toward the fifth side wall 11e, but for example, to inject the processing gas directly toward the center O of the substrate W.

[0077] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0078] This international application claims priority based on Japanese Patent Application No. 2022-120776, filed on 28 July 2022, and the entire contents of said application are incorporated herein by reference. [Explanation of Symbols]

[0079] 1. 1X substrate processing apparatus 10, 10X processing container 11, 11X inner tube 31a First inert gas supply pipe 32a Processing gas supply pipe 33a Second inert gas supply pipe W board

Claims

1. A processing container that houses multiple substrates arranged in multiple stages, A processing gas supply pipe extends along the arrangement direction of the plurality of substrates and supplies processing gas into the processing container, A pair of inert gas supply pipes are provided along the circumferential direction of the substrate, positioned to sandwich the processing gas supply pipe, and extending along the arrangement direction, supplying inert gas into the processing container, Equipped with, A substrate processing apparatus comprising a pair of inert gas supply pipes configured to inject the inert gas toward the inner surface of the side wall of the processing container, wherein the inner surface forms a flow of the inert gas in the circumferential direction of the substrate.

2. The processing gas supply pipe is configured to inject the processing gas toward the inner surface of the side wall. The substrate processing apparatus according to claim 1.

3. The aforementioned side wall is The first side wall extending along the circumferential direction, A second side wall is located radially outward of the substrate than the first side wall and extends along the circumferential direction at a position different from the first side wall in the circumferential direction, A third side wall connected to one end of the first side wall and one end of the second side wall, A fourth side wall connected to the other end of the first side wall and the other end of the second side wall, It has, The processing gas supply pipe and the pair of inert gas supply pipes are provided in the region enclosed by the second side wall, the third side wall, and the fourth side wall. The substrate processing apparatus according to claim 1.

4. The angle between the second side wall and the third side wall, and the angle between the second side wall and the fourth side wall are obtuse angles. The substrate processing apparatus according to claim 3.

5. The pair of inert gas supply pipes are A first inert gas supply pipe having a first pipe wall located closer to the third side wall than the processing gas supply pipe and having a plurality of first gas holes formed along the arrangement direction, A second inert gas supply pipe is located closer to the fourth side wall than the processing gas supply pipe and has a second pipe wall in which a plurality of second gas holes are formed along the arrangement direction, It has, The first inert gas supply pipe is configured to inject the inert gas from the plurality of first gas holes toward the second side wall or the third side wall, The second inert gas supply pipe is configured to inject the inert gas from the plurality of second gas holes toward the second side wall or the fourth side wall. The substrate processing apparatus according to claim 3.

6. In a cross-section perpendicular to the aforementioned arrangement direction, when the first half-line extending radially outward from the center of the first inert gas supply pipe is defined as the first half-line, and the second half-line extending radially outward from the center of the first inert gas supply pipe to the boundary between the second side wall and the third side wall is defined as the second half-line, The plurality of first gas holes are located in the region of the first pipe wall between the first half-line and the second half-line. The substrate processing apparatus according to claim 5.

7. In a cross-section perpendicular to the aforementioned arrangement direction, when the first half-line extending radially outward from the center of the first inert gas supply pipe is defined as the first half-line, The plurality of first gas holes are located at the intersections of the first pipe wall with the first half-line, The substrate processing apparatus according to claim 5.

8. In a cross-section perpendicular to the aforementioned arrangement direction, when the semi-linear line extending from the center of the first inert gas supply pipe to the boundary between the second side wall and the third side wall is defined as the second semi-linear line, The plurality of first gas holes are located at the intersections of the first pipe wall with the second half-line, The substrate processing apparatus according to claim 5.

9. In a cross-section perpendicular to the aforementioned arrangement direction, when the semi-linear line extending from the center of the first inert gas supply pipe to the boundary between the second side wall and the third side wall is defined as the second semi-linear line, and the semi-linear line extending from the center of the first inert gas supply pipe to the boundary between the first side wall and the third side wall is defined as the third semi-linear line, The plurality of first gas holes are located in the region of the first pipe wall between the second half-line and the third half-line. The substrate processing apparatus according to claim 5.

10. In a cross-section perpendicular to the aforementioned arrangement direction, when the semi-linear line extending radially outward from the center of the second inert gas supply pipe is defined as the fourth semi-linear line, and the semi-linear line extending radially outward from the center of the second inert gas supply pipe to the boundary between the second side wall and the fourth side wall is defined as the fifth semi-linear line, The plurality of second gas holes are located in the region of the second pipe wall between the fourth half-line and the fifth half-line. A substrate processing apparatus according to any one of claims 5 to 9.

11. In a cross-section perpendicular to the aforementioned arrangement direction, when the semi-linear line extending radially outward from the center of the second inert gas supply pipe is defined as the fourth semi-linear line, The plurality of second gas holes are located on the second pipe wall at the intersection with the fourth half-line, A substrate processing apparatus according to any one of claims 5 to 9.

12. In a cross-section perpendicular to the aforementioned arrangement direction, when the fifth half-line is defined as the half-line extending from the center of the second inert gas supply pipe to the boundary between the second side wall and the fourth side wall, The plurality of second gas holes are located on the second pipe wall at the intersection with the fifth half-line, A substrate processing apparatus according to any one of claims 5 to 9.

13. In a cross-section perpendicular to the aforementioned arrangement direction, when the semi-linear line extending from the center of the second inert gas supply pipe to the boundary between the second side wall and the fourth side wall is defined as the fifth semi-linear line, and the semi-linear line extending from the center of the second inert gas supply pipe to the boundary between the first side wall and the fourth side wall is defined as the sixth semi-linear line, The plurality of second gas holes are located in the region of the second pipe wall between the fifth half-line and the sixth half-line. A substrate processing apparatus according to any one of claims 5 to 9.

14. A processing container that houses multiple substrates arranged in multiple stages, A processing gas supply pipe extends along the arrangement direction of the plurality of substrates and supplies processing gas into the processing container, A pair of inert gas supply pipes are provided along the circumferential direction of the substrate, positioned to sandwich the processing gas supply pipe, and extending along the arrangement direction, supplying inert gas into the processing container, A substrate processing apparatus comprising the above, wherein a substrate processing method is used to process the plurality of substrates housed in the processing container, A substrate processing method comprising injecting the processing gas into the processing container from the processing gas supply pipe while injecting the inert gas from the pair of inert gas supply pipes toward the inner surface of the side wall of the processing container, wherein the inner surface forms a flow of the inert gas in the circumferential direction of the substrate.

15. The flow rate of the inert gas injected from each of the pair of inert gas supply pipes is less than the flow rate of the processing gas injected from the processing gas supply pipe. The substrate processing method according to claim 14.

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