Film forming device

Abstract

To correctly measure a gap between a shower head and a stage forming a treatment space.SOLUTION: Provided is a film deposition apparatus including a treatment container, a stage that is arranged in the treatment container, can be elevated, and has a heating part, a shower head that faces the stage and has multiple gas holes, an elevation mechanism that elevates the stage in depositing a film and forms a treatment space between the shower head and the stage, and a measurement part for measuring a gap between the shower head and the stage.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a film forming apparatus.

Background Art

[0002] For example, Patent Document 1 proposes a substrate processing apparatus having a liftable stage in a processing container, a member facing the stage and forming a processing space therebetween, a gas supply unit for supplying a raw material gas and a reaction gas into the processing container, and a pressure regulating valve with adjustable opening degree. Adjustment of the gap between the member forming the processing space and the stage affects the process executed in the processing space.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a film forming apparatus capable of accurately measuring the gap between a shower head and a stage forming a processing space.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a film forming apparatus including a processing container, a stage provided in the processing container so as to be liftable and having a heating unit, a shower head facing the stage and having a plurality of gas holes, a lifting mechanism for raising the stage during film formation to form a processing space between the shower head and the stage, and a measuring unit for measuring the gap between the shower head and [[ID=^44]]the stage and and the stage. <000003^3>A film forming apparatus is provided.

Effects of the Invention

[0006] From one perspective, the gap between the showerhead and the stage that form the processing space can be accurately measured. [Brief explanation of the drawing]

[0007] [Figure 1] An example of a schematic cross-sectional view of a film deposition apparatus according to this embodiment. [Figure 2] A diagram showing an example of a measuring unit according to the embodiment. [Figure 3] A diagram showing an example configuration of an eddy current sensor and its surrounding components according to an embodiment. [Figure 4] A flowchart showing an example of the film deposition process according to the embodiment. [Figure 5] A flowchart showing an example of a film deposition process using the ALD method according to the present invention. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] In this specification, deviations in directions such as parallel, right angles, orthogonal, horizontal, vertical, up and down, and left and right are permitted to the extent that they do not impair the effects of the embodiment. The shape of the corners is not limited to right angles; they may be rounded in an arc shape, or they may be chamfered. Parallel, right angles, orthogonal, horizontal, vertical, circular, and coincidence may include approximately parallel, approximately right angles, approximately orthogonal, approximately horizontal, approximately vertical, approximately circular, and approximately coincidence.

[0010] [Example of a film deposition apparatus configuration] The film deposition apparatus 100 according to this embodiment will be described with reference to Figure 1. Figure 1 is an example of a schematic cross-sectional view of the film deposition apparatus 100 according to this embodiment.

[0011] The film deposition apparatus 100 is a device that sequentially supplies a raw material gas and a reaction gas to a substrate W such as a wafer to deposit a desired film on the surface of the substrate W. For example, as an example of a desired film, the film deposition apparatus 100 supplies TiCl4 gas as a raw material gas and NH3 gas as a reaction gas to deposit a metal-containing TiN film on the surface of the substrate W.

[0012] As shown in Figure 1, the film deposition apparatus 100 includes a processing container 1, a stage (substrate mounting platform) 2, a shower head 3, an exhaust unit 4, a processing gas supply unit 5, and a control device 6. The processing container 1 is made of a metal such as aluminum and has a substantially cylindrical shape. An inlet / outlet 11 for loading or unloading substrates W is formed in the side wall of the processing container 1, and the inlet / outlet 11 can be opened and closed by a gate valve 12.

[0013] An annular exhaust duct 13 with a rectangular cross-section is provided on top of the main body of the processing container 1. A slit 13a is formed along the inner circumference of the exhaust duct 13. An exhaust port 13b is also formed on the outer wall of the exhaust duct 13. A top wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1. A seal ring 15 is provided between the top wall 14 and the exhaust duct 13, and the inside of the processing container 1 is airtightly sealed. The partitioning member 16 divides the inside of the processing container 1 vertically when the stage 2 (and outer ring 22) rises to the processing position described later.

[0014] Stage 2 horizontally supports the substrate W within the processing container 1. Stage 2 is disc-shaped, corresponding to the size of the substrate W, and is supported by a support member 23. Stage 2 is made of ceramic material such as aluminum nitride (AlN) or metallic material such as aluminum or nickel-based alloy, and has a heater 21 embedded inside for heating the substrate W. The heater 21 is powered by a heater power supply (not shown) and generates heat. The output of the heater 21 is controlled by the temperature signal of a thermocouple (not shown) provided near the substrate mounting surface on the upper surface of Stage 2, thereby controlling the substrate W to a predetermined temperature. The heater 21 is an example of a heating element of Stage 2. Stage 2 is provided with an outer ring 22 made of ceramic such as alumina, covering the side surface of Stage 2 in the outer peripheral region of the substrate mounting surface.

[0015] The support member 23 extends from the center of the bottom surface of the stage 2, through a hole formed in the bottom wall of the processing container 1, and downwards to the processing container 1, with its lower end connected to the lifting mechanism 24. The lifting mechanism 24 allows the stage 2 to move up and down via the support member 23 between the processing position shown by the solid line in Figure 1 and the transport position shown by the dashed line below it, where the substrate W can be transported. A flange portion 25 is attached to the lower part of the support member 23 to the processing container 1, and a bellows 26 is provided between the bottom surface of the processing container 1 and the flange portion 25, which partitions the atmosphere inside the processing container 1 from the outside air and expands and contracts in accordance with the lifting operation of the stage 2.

[0016] Near the bottom of the processing container 1, three substrate support pins (only two are shown) are provided, protruding upward from the lifting plate 27a. The substrate support pins 27 can be raised and lowered via the lifting plate 27a by a lifting mechanism 28 located below the processing container 1, and are inserted into through holes 2a provided in the stage 2 at the transport position, allowing them to protrude and retract relative to the upper surface of the stage 2. By raising and lowering the substrate support pins 27 in this manner, the substrate W is transferred between the substrate transport mechanism (not shown) and the stage 2.

[0017] The shower head 3 supplies the processing gas in a shower shape into the processing vessel 1. The shower head 3 is made of metal, faces the stage 2, and has substantially the same diameter as the stage 2. The shower head 3 has a main body portion 31 fixed to the top wall 14 of the processing vessel 1 and a shower plate 32 connected below the main body portion 31. A gas diffusion space 33 is formed between the main body portion 31 and the shower plate 32, and a gas introduction hole 36 is provided in the gas diffusion space 33 so as to penetrate the center of the main body portion 31 and the top wall 14 of the processing vessel 1. A plurality of gas holes 35 are formed in the flat surface on the central side of the shower plate 32. An outer peripheral portion of the central region in which the plurality of gas holes 35 are formed has a protruding portion 34 protruding in an annular shape toward the stage 2 side.

[0018] The stage 2 is provided in the processing vessel 1 so as to be movable up and down, and the elevating mechanism 24 raises the stage 2 to the processing position during film formation. Thereby, a processing space 37 is formed between the shower head 3 and the stage 2. That is, in a state where the stage 2 exists at the processing position during film formation, a processing space 37 is formed between the shower plate 32 and the stage 2, and an annular gap 38 is formed with the upper surfaces of the protruding portion 34, the stage 2, and the outer ring 22 being close to each other. The gap (interval, distance) G between the shower head 3 (the protruding portion 34 of the shower plate 32) and the stage 2 in a state where the stage 2 exists at the processing position is measured by the measuring unit A. In a state where the stage 2 exists at the processing position during film formation, the gap G measured by the measuring unit A is, for example, about 3 mm.

[0019] The measuring unit A has an eddy current sensor 60 installed in the shower head 3 (the protruding portion 34 of the shower plate 32) and a mesh electrode 20 provided on the stage 2 (see FIGS. 1 and 2(a)). The eddy current sensor 60 is covered with a cover member 61. The cover member 61 is an insulator and covers at least the side surface of the eddy current sensor 60. Further, it has an exhaust pipe 45 for evacuating the gap around the eddy current sensor 60 in the shower head 3 to vacuum. Details of the measuring unit A will be described later.

[0020] The exhaust unit 4 evacuates the interior of the processing vessel 1. The exhaust unit 4 includes an exhaust pipe 41 connected to the exhaust port 13b of the exhaust duct 13, an APC (Auto Pressure Controller) valve 42, an on-off valve 43, and a vacuum pump 44. One end of the exhaust pipe 41 is connected to the exhaust port 13b of the exhaust duct 13, and the other end is connected to the suction port of the vacuum pump 44. Between the exhaust duct 13 and the vacuum pump 44, the APC valve 42 and the on-off valve 43 are provided in order from the upstream side. The APC valve 42 adjusts the conductance of the exhaust path to adjust the pressure in the processing space 37. The on-off valve 43 switches the opening and closing of the exhaust pipe 41. During processing, the partitioning member 16 and the stage 2 (outer ring 22) partition the interior of the processing vessel 1 into an upper space including the processing space 37 and a lower space on the back side of the stage 2. Thereby, the gas in the processing space 37 reaches the annular space inside the exhaust duct 13 through the annular gap 38 and the slit 13a, and is exhausted from the exhaust port 13b of the exhaust duct 13 through the exhaust pipe 41 by the vacuum pump 44 of the exhaust unit 4. Note that the lower space is in a purge atmosphere by a purge gas supply mechanism (not shown). Therefore, the gas in the processing space 37 does not flow into the lower space.

[0021] The film forming apparatus 100 further includes an exhaust mechanism 7 that evacuates the space around the eddy current sensor 60 in the shower head 3. The exhaust mechanism 7 includes an exhaust pipe 45 (see FIGS. 1 and 3). The exhaust unit 4 includes an APC valve 46 and an on-off valve 47 connected to the exhaust pipe 45. The exhaust pipe 45 is connected to the suction port of the vacuum pump 44. Between the exhaust pipe 45 and the vacuum pump 44, the APC valve 46 and the on-off valve 47 are provided in order from the upstream side. The APC valve 46 adjusts the conductance of the exhaust path to adjust the pressure in the gap around the eddy current sensor 60. The on-off valve 47 switches the opening and closing of the exhaust pipe 45. The gas in the gap around the eddy current sensor 60 is exhausted by the vacuum pump 44 through the exhaust pipe 45.

[0022] The processing gas supply unit 5 includes a raw material gas supply line L1, a reaction gas supply line L2, a purge gas supply line L3, and a merging pipe L4. The merging pipe L4 is connected to the gas inlet hole 36. The raw material gas supply line L1 extends from the raw material gas supply source 51 and is connected to the merging pipe L4. The raw material gas supply line L1 is equipped with a mass flow controller (not shown) and an on-off valve 54, in that order from the raw material gas supply source 51 side. The mass flow controller controls the flow rate of the raw material gas flowing through the raw material gas supply line L1. The on-off valve V1 switches the supply and cessation of the raw material gas during the ALD process. A buffer tank (not shown) may be provided between the mass flow controller and the on-off valve 54. The buffer tank temporarily stores the raw material gas and supplies the required raw material gas in a short time.

[0023] The reaction gas supply line L2 extends from the reaction gas supply source 52 and is connected to the junction pipe L4. The reaction gas supply line L2 is equipped with a mass flow controller (not shown) and an on-off valve 55, in that order from the reaction gas supply source 52 side. The mass flow controller controls the flow rate of the reaction gas flowing through the reaction gas supply line L2. The on-off valve 55 switches the supply and cessation of the reaction gas during the ALD process. A buffer tank (not shown) may be provided between the mass flow controller and the on-off valve 55. The buffer tank temporarily stores the reaction gas and supplies the required reaction gas in a short time.

[0024] The purge gas supply line L3 extends from the purge gas supply source 53 and is connected to the junction pipe L4. The purge gas supply line L3 is equipped with a mass flow controller (not shown) and an on-off valve 56, in that order from the purge gas supply line L3 side. The mass flow controller controls the flow rate of purge gas flowing through the purge gas supply line L3. The on-off valve 56 switches the supply and cessation of purge gas during the ALD process. A buffer tank (not shown) may be provided between the mass flow controller and the on-off valve 56. The buffer tank temporarily stores the purge gas and supplies the necessary reaction gas in a short time.

[0025] As a result, N2 gas is supplied to the junction pipe L4 side via the purge gas supply line L3. The purge gas supply line L3 continuously supplies N2 gas during film formation by the ALD method and also functions as a carrier gas for the raw material gas. An orifice (not shown) is provided between the on-off valve 56 and the junction pipe L4 to prevent the purge gas from flowing back into the purge gas supply line L3.

[0026] The control device 6 controls the operation of each part of the film deposition apparatus 100. The control device 6 has a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU executes the desired processing according to a recipe stored in a memory area such as RAM. The recipe contains control information for the apparatus for process conditions. The control information may be, for example, gas flow rate, pressure, temperature, and process time. The recipe and the program used by the control device 6 may be stored in, for example, a hard disk or semiconductor memory. Alternatively, the recipe and the like may be stored on a storage medium readable by a portable computer such as a CD-ROM or DVD and set in a predetermined location so that they can be read.

[0027] [Measurement part] Next, the measurement unit A will be explained with reference to Figure 2. Figure 2 is a diagram showing an example of the measurement unit A according to the embodiment. As shown in Figure 1, by raising and lowering the stage 2 and narrowing the gap G between the shower head 3 and the stage 2 during film deposition, the resistivity and uniformity of the film thickness can be improved, and the coverage during film deposition can be improved. However, the narrower the gap G is controlled, the greater the impact that even a slight control error in the gap G has on the process (substrate processing).

[0028] Therefore, in the film deposition apparatus 100 of this disclosure, the gap G is accurately measured by the measuring unit A. As shown in Figure 2(a), the measuring unit A has an eddy current sensor 60 and a mesh electrode 20. The eddy current sensor 60 is installed on an annular projection 34 that protrudes from the shower plate 32 toward the stage 2 and detects the mesh electrode 20 in the stage 2. The eddy current sensor 60 has a coil and generates a high-frequency magnetic field. When the object to be measured (the mesh electrode 20 in Figure 2) is within this magnetic field, the distance D is measured by electromagnetic induction, which causes eddy currents to flow in the mesh electrode 20 perpendicular to the passage of the magnetic flux. The distance D is the distance between the detection surface 60a of the eddy current sensor 60 and the surface of the mesh electrode 20, thereby enabling accurate measurement of the gap G between the shower head 3 and the stage 2.

[0029] The eddy current sensor 60 is positioned so as not to obstruct the gas flow F discharged from the multiple gas holes 35 (see Figure 1). For this reason, the inner diameter side surface of the protrusion 34 is a tapered surface 32a that widens outward, and the eddy current sensor 60 is positioned on the outer circumference side of the tapered surface 32a. As a result, the detection surface 60a of the eddy current sensor 60 is oriented in approximately the same direction as the gas flow F discharged from the multiple gas holes 35, and a gas flow F can be created in a direction away from the detection surface 60a of the eddy current sensor 60. As a result, it is possible to prevent the detection surface 60a from being damaged by film formation and thus prevent a decrease in the measurement function of the eddy current sensor 60.

[0030] Furthermore, the eddy current sensors 60 may be mounted, for example, in three locations circumferentially on the annular projection 34, spaced 120° apart. The number of eddy current sensors 60 may be one or more, but three or more are preferred. By providing three or more eddy current sensors 60 on the projection 34, the tilt of the stage 2 can be measured by determining the difference in measured values ​​of three or more gaps G.

[0031] The eddy current sensor 60 is installed on the shower head 3 and not on stage 2. Considering the heat resistance of the eddy current sensor 60, the upper limit of the temperature at which the eddy current sensor 60 can be used correctly is about 200°C. However, during film formation, stage 2 is heated by the heater 21 and reaches over 400°C. Therefore, the eddy current sensor 60 cannot be installed on the stage 2 side.

[0032] Furthermore, if the eddy current sensor 60 is placed on stage 2, the eddy current sensor 60 will also be subjected to film deposition during the film deposition process on the substrate W on stage 2, reducing the detection function of the eddy current sensor 60 and making it impossible to accurately measure the gap G. In addition, when the film on the eddy current sensor 60 is removed by cleaning, the eddy current sensor 60 will be exposed to the cleaning gas and damaged. Therefore, the eddy current sensor 60 cannot be installed on the stage 2 side.

[0033] The film deposition apparatus 100 of this disclosure places the eddy current sensor 60 on the shower head 3 and not on the stage 2 side. Therefore, the eddy current sensor 60 can be used in environments below 200°C. Furthermore, the eddy current sensor 60 is placed on the shower head 3 side, away from the stage 2, so that it is not subjected to film deposition, and on the outer circumference of the tapered surface 32a such that the direction of the gas flow F is away from the detection surface 60a of the eddy current sensor 60. This allows for accurate measurement of the gap G without degrading the detection function of the eddy current sensor 60, and without being affected by thermal expansion and contraction of the component on which the eddy current sensor 60 is placed, or by variations in the component.

[0034] The eddy current sensor 60 constantly monitors the state of the gap G. By detecting the tilt of stage 2, it is possible to detect abnormalities such as deterioration or breakage of the belt used for power transmission in the lifting mechanism 24, loosening of the lock nut of the linear guide, and loosening of various screws at an early stage. As a result, if stage 2 tilts beyond the standard, it is determined to be an abnormality, and the processing of the substrate W is stopped, preventing the substrate W from being processed continuously and reducing the generation of defective substrates W that must be discarded.

[0035] Although there are individual differences in the attachment of the eddy current sensor 60 to the shower head 3 and the position of the mesh electrode 20 in the stage 2, these individual differences can be compensated for by performing zero-point adjustment of the eddy current sensor 60 when adjusting the gap G.

[0036] The mesh electrode 20 is an example of a metal component provided on the stage 2 side opposite the eddy current sensor 60. The metal electrode positioned opposite the eddy current sensor 60 is not limited to the mesh electrode 20. A plate-shaped electrode may be embedded in the stage 2 instead of the mesh electrode 20. The metal component may also be a metal film formed on the surface of the stage 2. An outer ring 22 is positioned opposite the eddy current sensor 60, and the metal component may be a mesh electrode embedded in the outer ring 22, a plate-shaped electrode, or a metal film formed on the surface of the outer ring 22. However, if the metal component is a metal film, the metal film must be resistant to cleaning gases. Since the outer ring 22 is easier to replace than the stage 2, it is preferable to provide the metal component on the outer ring 22 rather than the stage 2 if you wish to replace the metal component.

[0037] As described above, the metal member is provided on the stage 2 or the outer ring 22 at a position at least facing the eddy current sensor 60. The metal member is made of, for example, molybdenum or other metals.

[0038] The mesh electrode 20 or plate electrode embedded in stage 2 or outer ring 22 may be placed over the entire surface of stage 2, etc., or it may be placed in a position facing the eddy current sensor 60 of stage 2, etc., and may not be placed over the entire surface. The mesh electrode 20 or plate electrode may also be used as an RF electrode to which RF (radio frequency) power is applied. In this case, it is preferable to place the mesh electrode 20 or plate electrode over the entire surface of stage 2. When RF power is not supplied to the mesh electrode 20 or plate electrode, the gap G can be measured by the eddy current sensor 60 using the mesh electrode 20 or plate electrode.

[0039] The mesh electrodes 20 may also be used as heater wires. In this case, it is preferable to arrange the mesh electrodes 20 over the entire surface of stage 2. When no voltage for heater heating is supplied to the mesh electrodes 20, the gap G can be measured using the mesh electrodes 20 with the eddy current sensor 60.

[0040] The eddy current sensor 60 is covered by a cover member 61. The cover member 61 is made of ceramics such as Al2O3, AlN, or quartz (SiO2). By covering the sides of the eddy current sensor 60 with the ceramic cover member 61, it is possible to prevent gas from entering through the gap between the eddy current sensor 60 and the shower plate 32, thereby preventing turbulence in the gas flow F around the eddy current sensor 60.

[0041] The presence of a metal component around the side of the eddy current sensor 60 can cause false detections. Conventionally, a space was provided around the eddy current sensor 60 to prevent false detections. However, providing a space around the eddy current sensor 60 located on the protruding portion 34 is undesirable because it disturbs the gas flow F and exposes the eddy current sensor 60 to the raw material gas, reaction gas, and cleaning gas.

[0042] Therefore, by covering the side of the eddy current sensor 60 with a ceramic cover member 61, the eddy current sensor 60 can avoid detecting the metal of the shower plate 32 on its side. This prevents false detections and allows the gap G to be measured correctly by detecting the metal of the mesh electrode 20 from the detection surface 60a of the eddy current sensor 60.

[0043] By not providing a cover member 61 around the eddy current sensor 60 and instead creating a space between the eddy current sensor 60 and the shower plate 32, detection of the metal on the shower plate 32 on the side of the eddy current sensor 60 can also be prevented. However, in this case, gas enters the space around the eddy current sensor 60, causing a film to form on the eddy current sensor 60, and the eddy current sensor 60 is damaged when the film is removed with a cleaning gas.

[0044] Therefore, by covering the eddy current sensor 60 with the cover member 61, false detections can be prevented and film formation on the eddy current sensor 60 can be prevented. In addition, by providing the cover member 61 so as to cover the eddy current sensor 60, the influence of radiant heat from stage 2 to the eddy current sensor 60 can be suppressed, and the temperature rise of the eddy current sensor 60 can be reduced.

[0045] The lower surface of the cover member 61 and the protruding surface 34a of the protruding portion 34 of the shower plate 32 are located in the same plane. The detection surface 60a of the eddy current sensor 60 may be in the same plane as the protruding surface 34a of the protruding portion 34, or it may be recessed inward (towards the back) of the protruding surface 34a.

[0046] As shown in Figure 2(b), a visor 32b for preventing gas adhesion to the eddy current sensor 60 may be provided between the tapered surface 32a and the detection surface 60a of the eddy current sensor 60. The visor 32b may be provided around the entire circumference of the projection 34, on the inner diameter side of the eddy current sensor 60 and on the outer circumference side of the tapered surface 32a.

[0047] [Example configuration of an eddy current sensor and its surrounding components] Next, an example of the configuration of the eddy current sensor 60 and its surroundings according to the embodiment will be further explained with reference to Figure 3. As shown in Figure 3, the eddy current sensor 60 positioned on the protruding portion 34 may be covered not only on its sides but also on its detection surface 60a by the cover member 61. This prevents the formation of a film on the sides and detection surface 60a of the eddy current sensor 60.

[0048] The thickness T1 of the side portion of the cover member 61 is preferably 0.75 to 1.0 times or more the diameter of the eddy current sensor, but an appropriate thickness may be adopted depending on the specifications of the eddy current sensor. The thickness T2 of the tip portion of the cover member 61 that covers the detection surface 60a is thinner than the thickness T1 of the side portion, and may be 0.5 mm to 2.0 mm.

[0049] By placing the eddy current sensor 60 on the shower plate 32, the eddy current sensor 60 can become a temperature singularity, altering the temperature distribution within the processing space 37 (see Figure 1) and potentially affecting the substrate W processing (film deposition). For this reason, it is desirable to miniaturize the eddy current sensor 60 as much as possible. Furthermore, the smaller the eddy current sensor 60, the weaker the high-frequency magnetic field generated from it becomes, which is preferable because it allows for a thinner side thickness T1 of the cover member 61.

[0050] However, if the eddy current sensor 60 is miniaturized and the thickness T2 of the tip of the cover member 61 is reduced to between 0.5 mm and 2.0 mm, the tip of the cover member 61 becomes prone to cracking due to its thinness. In particular, the cable 67 connected to the eddy current sensor 60 needs to be routed to the atmosphere. In other words, the cable 67 of the eddy current sensor 60 is in the atmosphere. In contrast, the processing space 37 is a vacuum space. Therefore, if the tip of the cover member 61, which is screwed to the shower plate 32 by screws 62, acts as a plate separating the atmosphere and the vacuum, the pressure difference between the atmosphere and the vacuum may cause the tip of the cover member 61 to crack.

[0051] Therefore, to prevent the tip of the cover member 61 from cracking, a sealing ring 63 such as an O-ring is provided between the cable 67 and the eddy current sensor 60, and the sealing ring 63 is positioned to separate the atmosphere from the vacuum, thereby sealing the eddy current sensor 60 and the cover member 61 side from the atmospheric space through which the cable 67 extends, and creating a vacuum section on the cover member 61 side. In addition, by providing a sealing ring 64 between the cover member 61 and the shower plate 32, and a sealing ring 65 between the shower plate 32 and the main body 31, it is possible to suppress the leakage of raw material gas, reaction gas, and cleaning gas supplied to the reaction space 37 and the gas diffusion space 33, as well as the leakage of these gases flowing near the slit 13a. Furthermore, by providing a sealing ring 66 between the main body 31 and the exhaust pipe 45, it is possible to suppress the mixing of air around the eddy current sensor 60 and the cover member 61.

[0052] The eddy current sensor 60 and cover member 61 are fluidly isolated from the atmosphere and reaction space 37. However, due to assembly performed in an atmospheric environment, residual air may remain around the eddy current sensor 60 and cover member 61, or air may enter through the seal ring. If the reaction space 37 is then evacuated, the thin tip of the cover member 61 may be damaged due to the pressure difference between the air surrounding the eddy current sensor 60 and cover member 61. Therefore, by using a vacuum pump 44 to evacuate from the exhaust pipe 45 and creating a vacuum in the air gap around the eddy current sensor 60 and cover member 61 inside the shower head 3, the pressure difference between the reaction space 37 and the air gap around the eddy current sensor 60 and cover member 61 is eliminated, and excessive load on the tip of the cover member 61 can be suppressed.

[0053] For example, the exhaust volume may be determined according to the cross-sectional area of ​​the exhaust pipe 45, and the exhaust volume from the exhaust pipe 45 and the exhaust volume from the exhaust pipe 41 (see Figure 1) may be controlled to adjust the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the cover member 61 to be approximately the same. For example, the conductance of the exhaust pipe 45 may be adjusted so that the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the cover member 61 are approximately the same. Alternatively, the opening degree of the APC valve 46 may be adjusted so that the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the cover member 61 are approximately the same. This prevents the cover member 61 from cracking due to atmospheric pressure. The exhaust from the exhaust pipe 45 may be performed using the vacuum pump 44, or a different vacuum pump may be used.

[0054] [ALD equipment] The film deposition apparatus 100 described above is, for example, an ALD (Atomic Layer Deposition) apparatus and can perform film deposition (substrate processing) using the ALD method. An example of film deposition using the ALD method performed by the film deposition apparatus 100 will be described with reference to Figures 4 and 5. Figure 4 is a flowchart of an example of film deposition according to the embodiment. Figure 5 is a flowchart of an example of film deposition using the ALD method according to the embodiment.

[0055] In step S1, the substrate W is loaded into the processing container 1 of the film deposition apparatus 100. Specifically, the stage 2, which has been heated to a predetermined temperature (for example, 300°C to 700°C) by the heater 21, is lowered to the transport position (shown by the dashed line in Figure 1), and the gate valve 12 is opened. Next, the substrate W is loaded into the processing container 1 via the loading / unloading port 11 by a transport arm (not shown) and supported by substrate support pins 27. When the transport arm retracts from the loading / unloading port 11, the gate valve 12 is closed. The substrate support pins 27 are then lowered to place the substrate W on the stage 2.

[0056] Next, in step S2, the control device 6 controls the lifting mechanism 24 to raise the stage 2 to the processing position (the position of the stage 2 shown by the solid line in Figure 1). As a result, the inside of the processing container 1 is divided into an upper space on the surface (substrate mounting surface) side of the stage 2, which includes the processing space 37, and a lower space on the back side of the stage 2.

[0057] Next, in step S3, the substrate W on stage 2 is heated, and the opening degrees of the APC valves 42 and 46 are adjusted. That is, the substrate W on stage 2 is heated to a predetermined temperature (for example, 300°C to 700°C) by the heater 21. The control device 6 also controls the exhaust unit 4 to adjust the vacuum inside the processing container 1 to a predetermined level. The control device 6 also controls the exhaust unit 4 to adjust the pressure around the eddy current sensor 60 and the cover member 61 so that it is approximately the same as the pressure inside the processing space 37.

[0058] Subsequently, the control device 6 opens the on-off valve 56 of the processing gas supply unit 5 and closes the on-off valves 54 and 55. This supplies purge gas from the purge gas supply source 53 into the processing space 37 via the purge gas supply line L3 and the merging pipe L4, thereby increasing the pressure. The control device 6 also adjusts the opening of the APC valve 42 so that the pressure in the processing space 37 reaches the desired pressure, based on a pressure sensor (not shown) that detects the pressure in the processing space 37. Furthermore, it adjusts the opening of the APC valve 46 so that the pressure around the eddy current sensor 60 is approximately the same as the pressure in the processing space 37.

[0059] Next, in step S4, substrate W processing is performed. Specifically, first, in step S11 in Figure 5, the control device 6 opens the on-off valve 54 and supplies raw material gas from the raw material gas supply source 51 to the processing space 37 via the raw material gas supply line L1 and the merging pipe L4, exposing the substrate W to the raw material gas and forming an atomic layer of raw material gas on the substrate W.

[0060] Next, in step S12, the control device 6 closes the on-off valve 54. This causes the purge gas supplied into the processing space 37 from the purge gas supply source 53 to discharge the raw material gas from the processing space 37.

[0061] Next, in step S13, the control device 6 opens the on-off valve 55 and supplies the reaction gas from the reaction gas supply source 52 into the processing space 37 via the reaction gas supply line L2 and the confluence pipe L4, reacting with the atomic layer of the raw material gas on the substrate W to form the desired film.

[0062] Next, in step S14, the control device 6 closes the on-off valve 55. This causes the reaction gas in the processing space 37 to be discharged by the purge gas supplied into the processing space 37 from the purge gas supply source 53.

[0063] In step S15, it is determined whether the processes in steps S11 to S14 have been performed a predetermined number of times. The processes in steps S11 to S14 are repeated until it is determined that the predetermined number of times has been performed. When it is determined that the predetermined number of times has been performed, the substrate processing shown in Figure 5 is terminated, and the process returns to step S4 in Figure 4.

[0064] For example, if the source gas is TiCl4 gas, the reaction gas is NH3 gas, and the purge gas is N2 gas, a TiN film will be formed on the substrate W. In the purging process, reaction products (NH4Cl gas, HCl gas), excess TiCl4 gas, NH3 gas, etc., are discharged.

[0065] When the substrate processing shown in Figure 5 is completed in step S4 of Figure 4, the process proceeds to step S5 of Figure 4, where the control device 6 controls the lifting mechanism 24 to lower the stage 2 to the transport position.

[0066] Next, in step S6, the substrate W is removed from the processing container 1 of the film deposition apparatus 100. Specifically, the substrate support pins 27 are raised to lift the substrate W placed on the stage 2 and support it with the substrate support pins 27. The gate valve 12 is also opened. Subsequently, the substrate W is removed from the processing container 1 via the loading / unloading port 11 by a transport arm (not shown). Once the transport arm has moved away from the loading / unloading port 11, the gate valve 12 is closed. With these steps, the process of depositing a desired film (e.g., a TiN film) onto the substrate W in the film deposition apparatus 100 is completed.

[0067] As described above, the film deposition apparatus 100 of this embodiment performs film deposition. At that time, the film deposition apparatus 100 can accurately measure the gap G between the showerhead 3 and the stage 2 that form the processing space 37. As a result, if the measured value of the gap G is within the acceptable range from the set value (target value), the substrate processing may be carried out as is, or if it is outside the acceptable range, the substrate processing may be interrupted and the substrate W may be discharged. Alternatively, the inclination of the stage 2 may be calculated from the measured value of the gap G, and if the calculated inclination of the stage 2 is outside the acceptable range, the inclination of the stage 2 may be corrected so that the inclination of the stage 2 is eliminated before performing the substrate processing, or the substrate processing may be interrupted and the substrate W may be discharged.

[0068] The film deposition apparatus according to the embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0069] For example, the above embodiment shows an example of film deposition by the ALD method, but the present invention can also be applied to various film deposition methods such as the CVD method and the SFD (Sequential Flow Deposition) method. [Explanation of symbols]

[0070] 1. Processing container 2 stages 3. Shower head 4. Exhaust section 5. Processing gas supply unit 6. Control device 7. Exhaust mechanism 22 Outer Ring 24 Lifting mechanism 32 shower plates 32a Tapered surface 34 Protrusion 34a Protruding surface 37 Processing space 41, 45 Exhaust piping 42 APC valves 43. On / off valve 44 Vacuum pump 60 Eddy current sensor 100 Film deposition equipment

Claims

1. Processing container and A stage having a heating section is provided within the processing container so as to be able to move up and down, A shower head having multiple gas holes facing the aforementioned stage, A lifting mechanism that raises the stage during film formation to form a processing space between the shower head and the stage, A measuring unit for measuring the gap between the shower head and the stage, It has, The measuring unit comprises an eddy current sensor installed in the shower head and a metal member provided on the stage or an outer peripheral member arranged on the outer periphery of the stage. The eddy current sensor is installed on a projection that protrudes in an annular shape from the outer circumferential surface of the region in the shower head where the plurality of gas holes are formed. Film deposition equipment.

2. The inner diameter side surface of the protrusion is a tapered surface that widens toward the center of the protrusion. The eddy current sensor is positioned such that the direction of the gas flow discharged from the plurality of gas holes is away from the detection surface of the eddy current sensor by the tapered surface. The film deposition apparatus according to claim 1.

3. Between the tapered surface and the eddy current sensor, there is an overhang for preventing gas from adhering to the eddy current sensor. The film deposition apparatus according to claim 2.

4. The metal member is a metal electrode provided on the stage or the outer peripheral member at a position facing the eddy current sensor. The film deposition apparatus according to claim 1.

5. The metal electrode is a mesh electrode or a plate-shaped electrode embedded inside the stage or inside the outer peripheral member. The film deposition apparatus according to claim 4.

6. The metal electrode is a metal film formed on the surface of the stage or the outer peripheral member. The film deposition apparatus according to claim 4.

7. The eddy current sensor has an insulating cover member that covers at least its sides, The film deposition apparatus according to claim 1.

8. The shower head has an exhaust mechanism that evacuates the space around the eddy current sensor into a vacuum. The film deposition apparatus according to claim 1.

9. The aforementioned film deposition apparatus is an ALD apparatus. The film deposition apparatus according to claim 1.

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