Substrate processing apparatus, nozzle, semiconductor device manufacturing method, and program

Abstract

Provided is a technology for uniformly processing a surface of a substrate.　The present invention comprises: a processing chamber for processing the substrate; a nozzle having a plurality of gas introduction parts for introducing a gas into the processing chamber, and a communication part for enabling partial communication between the gas introduction parts; and a plurality of gas supply parts for supplying the gas to the gas introduction parts.

Description

Technical Field

[0001] The present aspect relates to a substrate processing apparatus, a nozzle, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] As one aspect of a substrate processing apparatus used in a manufacturing process of a semiconductor device, for example, a substrate processing apparatus that processes a plurality of substrates in a batch is used (for example, Japanese Patent Laid-Open No. 2011-129879).

Summary of the Invention

Problems to be Solved by the Invention

[0003] The present disclosure provides a technique capable of uniformly processing the surface of a substrate.

Means for Solving the Problems

[0004] According to one aspect of the present disclosure, there is provided a technique including a nozzle having a processing chamber for processing a substrate, a plurality of gas introduction portions for introducing gas into the processing chamber, and a communication portion for partially communicating the gas introduction portions, and a plurality of gas supply portions for supplying gas to the gas introduction portions.

Effects of the Invention

[0005] According to the present disclosure, it becomes possible to uniformly process the surface of a substrate.

Brief Description of the Drawings

[0006] [[ID=F42]] [Figure 1] It is a longitudinal sectional view showing a schematic configuration example of a substrate processing apparatus according to one aspect of the present disclosure. [Figure 2] It is a horizontal sectional view showing a schematic configuration example of a substrate processing apparatus according to one aspect of the present disclosure. [Figure 3] It is a longitudinal sectional view along a gas flow showing a schematic configuration example of a gas supply structure of a substrate processing apparatus and a nozzle according to one aspect of the present disclosure. [Figure 4]This is a longitudinal cross-section of a nozzle cut perpendicular to the gas flow. [Figure 5] This is a perspective view showing a gas rectifier member of a substrate processing apparatus according to one aspect of the present disclosure. [Figure 6] This is a longitudinal cross-sectional view showing a substrate support according to one aspect of the present disclosure. [Figure 7A] This is an explanatory diagram illustrating gases that can be used in one aspect of this disclosure. [Figure 7B] This is an explanatory diagram illustrating gases that can be used in one aspect of this disclosure. [Figure 7C] This is an explanatory diagram illustrating gases that can be used in one aspect of this disclosure. [Figure 8] This is an explanatory diagram illustrating a controller for a substrate processing apparatus according to one aspect of the present disclosure. [Figure 9] This is a flowchart illustrating the substrate processing flow according to one aspect of this disclosure. [Figure 10] This is a perspective view showing a gas rectifier member relating to another aspect of the present disclosure. [Modes for carrying out the invention]

[0007] The embodiments of this design will be described below with reference to the drawings. Note that the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to those of reality. Furthermore, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings. Also, in the drawings, arrow U indicates the upward direction in the vertical direction, and arrow D indicates the downward direction in the vertical direction.

[0008] (1) Configuration of substrate processing apparatus The general configuration of a substrate processing apparatus 100 according to one aspect of this disclosure will be described with reference to Figures 1 to 9. Figure 1 is a side cross-sectional view of the substrate processing apparatus 100, and Figure 2 is a cross-sectional view taken along α-α' in Figure 1. Figure 3 is an explanatory diagram illustrating the relationship between the gas supply structure 212, the nozzle 227, the reaction tube 210, and the heater 211.

[0009] Next, I will explain the specific details. As shown in Figure 1, the substrate processing apparatus 100 has a housing 201, which comprises a reaction tube storage chamber 206 and a transfer chamber 217. The reaction tube storage chamber 206 is located on the transfer chamber 217.

[0010] The reaction tube storage chamber 206 comprises a vertically extending cylindrical reaction tube 210, a heater 211 as a heating element (e.g., a furnace body) installed on the outer circumference of the reaction tube 210, a gas supply structure 212 and a nozzle 227 for supplying gas, and a gas exhaust structure 213 for exhausting gas. Here, the reaction tube 210 is also called the processing chamber, and the space inside the reaction tube 210 is also called the processing space. The reaction tube 210 is capable of housing the substrate support 300, which will be described later.

[0011] The heater 211 has a resistance heating element on its inner surface facing the reaction tube 210, and an insulating section is provided to surround them. Therefore, the outside of the heater 211, i.e., the side not facing the reaction tube 210, is configured to have minimal thermal influence. A heater control unit (not shown) is electrically connected to the resistance heating element of the heater 211. The heater control unit can control the on / off state and heating temperature of the heater 211. The heater 211 can heat the gas, described later, to a temperature at which it can be thermally decomposed. The heater 211 is also called the processing chamber heating section or the first heating section.

[0012] As shown in Figures 1 to 3, the gas supply structure 212 and nozzle 227 are located upstream of the reaction tube 210 in the gas flow direction, and gas is supplied horizontally to the reaction tube 210 from the gas supply structure 212 and nozzle 227. The gas exhaust structure 213 is located downstream of the reaction tube 210 in the gas flow direction, and the gas inside the reaction tube 210 is discharged from the gas exhaust structure 213. The gas supply structure 212 and nozzle 227 are fixed so as to be separable.

[0013] Furthermore, a downstream flow straightening section 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to regulate the flow of gas discharged from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0014] The reaction tube 210, the nozzle 227, and the downstream flow rectifying section 215 have a continuous structure and are formed of materials such as quartz or SiC. These are composed of heat transmissive members that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas used for the semiconductor device.

[0015] The gas supply structure 212 is provided behind the nozzle 227 as viewed from the reaction tube 210. As shown in FIG. 2, the gas supply structure 212 includes a distribution section 222 that can communicate with a gas supply pipe 251 described later and a distribution section 224 that can communicate with a gas supply pipe 261. Note that the distribution section 222 and the distribution section 224 are passages that are long in the vertical direction and can distribute gas to each nozzle 227, and are also referred to as gas distribution sections.

[0016] As shown in FIG. 2, the gas supply structure 212 is provided with distribution sections 222 on both sides in the width direction and two distribution sections 224 on the center side.

[0017] As shown in FIGS. 2 and 3, a part of the downstream side of the gas supply pipe 251, which is an example of a gas supply section, is inserted into the distribution section 222, and a part of the downstream side of the gas supply pipe 261, which is an example of a gas supply section, is inserted into the distribution section 224. A plurality of holes 251A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 251, and a plurality of holes 261A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 261. The holes 251A and the holes 261A can also be referred to as openings.

[0018] As shown in FIGS. 2 to 4, a plurality of cylindrical nozzles 227 are stacked in the vertical direction, which is the same direction as the substrate S described later, on the downstream side of the gas supply structure 212. The nozzles 227 are provided in a plurality of stages in the height direction of a substrate holder described later. Note that the plurality of nozzles 227 can also be regarded as one nozzle 227 whose interior is partitioned into a plurality of flow paths in the vertical direction.

[0019] Different types of gases are supplied to the gas supply pipe 251 and the gas supply pipe 26 as described later.

[0020] As shown in Figures 2 and 3, on the side of the gas supply structure 212 on the nozzle 227 side, there are outlet holes 222c that communicate with the distribution unit 222 and are spaced vertically apart, and there are outlet holes 224c that communicate with the distribution unit 224 and are spaced vertically apart.

[0021] (Nozzle structure) As shown in Figure 2, the nozzle 227 is composed of a straight section 227A that extends linearly from the gas supply structure 212 toward the reaction tube 210, and an enlarged diameter section 227B provided on the reaction tube 210 side of the straight section 227A, which gradually widens toward the reaction tube 210. The nozzle 227 can be described as a gas ejection member that ejects gas.

[0022] As shown in Figures 2, 3, and 5, a gas rectifier 500 is housed inside the nozzle 227. The gas rectifier 500 is composed of one horizontal plate-shaped member 502 and a total of six vertical plate-shaped members 504, three of which are erected on the upper surface of the horizontal plate-shaped member 502 and three on the lower surface, forming eight gas inlet sections 506 inside the nozzle 227. The gas inlet sections 506 are passages through which the gas passes. The portion of the nozzle 227 where the gas rectifier 500 is located can be called the gas rectifier section. Furthermore, because the gas rectifier 500 is composed of a horizontal plate-shaped member 502 and vertical plate-shaped members 504, the resistance to gas flow through the nozzle 227 is reduced.

[0023] As shown in Figure 2, the vertical plate-shaped member 504 extends linearly in the portion located in the straight section 227A of the nozzle 227. Furthermore, in the portion located in the enlarged diameter section 227B of the nozzle 227, the central vertical plate-shaped member 504 extends linearly in the same direction as the portion located in the straight section 227A. Also, in the portion located in the enlarged diameter section 227B of the nozzle 227, the vertical plate-shaped members 504 on both sides in the nozzle width direction are positioned towards the reaction tube 210 and are inclined to increase the distance between them and the central vertical plate-shaped member 504. The inclined vertical plate-shaped members 504 on both sides are inclined toward the edge E in the width direction (the same direction as the width direction of the nozzle 227; the direction of arrow W in Figure 2) of the substrate S housed in the reaction tube 210. In other words, the vertical plate-shaped members 504 on both sides spread outward in the width direction from the upstream side to the downstream side of the processing gas flow.

[0024] As shown in Figure 4, in this embodiment, the cross-sectional area (area when viewed in a cross-section perpendicular to the gas flow) of each gas introduction section 506 located in the straight section 227A of the nozzle 227 is approximately the same.

[0025] As shown in Figures 2, 3, and 5, the gas rectifier member 500 has a wall 508 at the end facing the gas supply structure 212, and holes 510 are formed in this wall 508 that communicate with the outlet holes 222c and 224c of the gas supply structure 212.

[0026] Furthermore, the gas rectifier member 500 is provided with walls 512 at the boundary between the straight portion and the inclined portion of the vertical plate-shaped member 504, and holes 514 for passing gas are formed in each wall 512.

[0027] Two protrusions 502A are formed at intervals on each of the side ends of the horizontal plate-shaped member 502 in the width direction. These protrusions 502A abut against the inner wall surface of the nozzle 227, thereby forming a communication portion 518 with a width Wa between the side end of the horizontal plate-shaped member 502 and the inner wall surface of the nozzle 227, as shown in Figure 4. The communication portion 518 only needs to be partially provided between the side end of the horizontal plate-shaped member 502 and the inner wall surface of the nozzle 227. The number of protrusions 502A provided on the side end of the horizontal plate-shaped member 502 may be one or three or more.

[0028] Two protrusions 504A are formed at spaced intervals on both sides of the vertical plate-shaped member 504 in the width direction. These protrusions 504A abut against the inner wall surface of the nozzle 227, thereby forming a communication portion 520 with a width Wb between the side end of the vertical plate-shaped member 504 and the inner wall surface of the nozzle 227, as shown in Figure 4. The communication portion 520 only needs to be partially provided between the side end of the vertical plate-shaped member 504 and the inner wall surface of the nozzle 227. The number of protrusions 504A provided on the side end of the vertical plate-shaped member 504 may be one or three or more.

[0029] In this way, by housing the gas rectifier member 500 inside the nozzle 227, the four gas inlet sections 506, which are arranged side by side in the horizontal direction, can allow a portion of the gas passing through one gas inlet section 506 to enter the other gas inlet section 506 via the connecting section 520. Also, a portion of the gas passing through the other gas inlet section 506 can enter the other gas inlet section 506 via the connecting section 520.

[0030] Furthermore, in the two vertically adjacent gas inlet sections 506 on both sides in the nozzle width direction, a portion of the gas passing through the upper gas inlet section 506 can be introduced from the upper gas inlet section 506 to the lower gas inlet section 506 via the connecting section 518 of the horizontal plate-shaped member 502. Also, a portion of the gas passing through the lower gas inlet section 506 can be introduced from the lower gas inlet section 506 to the upper gas inlet section 506 via the connecting section 518.

[0031] For example, when gas is supplied to the gas inlet 506 on both sides in the width direction of the nozzle 227, gas can be ejected from the gas inlet 506 on both sides in the width direction toward the substrate S, and gas can also be ejected toward the substrate S from the two gas inlet 506 on the inside in the width direction. Each gas inlet 506 is partially connected by a connecting section 520 so that the flow is wide and symmetrical, and the vertical plate-shaped members 504 on both sides spread outward in the width direction from the upstream side to the downstream side of the processed gas flow, so that the gas can flow in a wide and symmetrical manner with respect to the substrate S. The arrows in Figure 2 indicate the gas flow. Therefore, the gas supplied from the gas supply structure 212 to the nozzle 227 can be straightened by the gas straightening member 500 and supplied to the surface of the substrate S. The connecting portion 518 and the connecting portion 520 can be referred to as a gap or slit.

[0032] (Downstream rectifier) As shown in Figure 1, the downstream flow straightening section 215 is configured such that, when the substrate S is supported by the substrate support 300, its ceiling is higher than the position of the uppermost substrate S, and its bottom is lower than the position of the lowest substrate S on the substrate support 300.

[0033] The downstream flow straightening section 215 has a housing 231 and partition plates 232. Of the partition plates 232, the portion facing the substrate S is extended horizontally so that it is at least larger than the diameter of the substrate S. Here, the horizontal direction refers to the direction of the side wall of the housing 231. Furthermore, multiple partition plates 232 are arranged vertically. The partition plates 232 are fixed to the side wall of the housing 231 and are configured so that gas does not move beyond the partition plates 232 to adjacent areas below or above. By preventing this, the gas flow described later can be reliably formed. A flange 233 is provided on the side of the housing 231 that is in contact with the gas exhaust structure 213.

[0034] The partition plates 232 have a continuous structure without holes. The center positions between the partition plates 232 correspond to the positions of the substrate S and are also located at positions corresponding to the vertical center positions of the nozzles 227. With this structure, the gas supplied from each nozzle 227 forms a flow that passes over the substrate S and partition plates 232, as shown by the arrows in the figure. At this time, the partition plates 232 are extended horizontally and have a continuous structure without holes. With this structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the gas flow of the gas passing through each substrate S is formed horizontally toward the gas exhaust structure 213 while the flow in the vertical direction is suppressed.

[0035] By providing partition plates 232 corresponding to nozzles 227, the pressure loss in the vertical direction can be made uniform both upstream and downstream of each substrate S, thereby reliably forming a horizontal gas flow with suppressed vertical flow across nozzles 227, substrate S, and partition plates 232.

[0036] The gas exhaust structure 213 is located downstream of the downstream flow straightening section 215. The gas exhaust structure 213 mainly consists of a housing 241 and a gas exhaust pipe connection section 242. A flange 243 is provided on the housing 241 on the side facing the downstream flow straightening section 215.

[0037] The gas exhaust structure 213 communicates with the space of the downstream flow straightening section 215. The housings 231 and 241 have a continuous height structure. The ceiling of housing 231 is configured to be the same height as the ceiling of housing 241, and the bottom of housing 231 is configured to be the same height as the bottom of housing 241.

[0038] The gas that has passed through the downstream straightening section 215 is exhausted from the exhaust port 244. At this time, since the gas exhaust structure does not have a partition plate or similar configuration, a gas flow including the vertical direction is formed toward the exhaust port 244.

[0039] The transfer chamber 217 is installed below the reaction tube 210 via a manifold 216. In the transfer chamber 217, a vacuum transfer robot (not shown) is used to horizontally place (e.g., mount) the substrate S onto the substrate support (hereinafter sometimes simply referred to as a boat) 300, and to remove the substrate S from the substrate support 300.

[0040] As shown in Figure 1, the transfer chamber 217 can house the substrate support 300, the partition plate support 310, and the vertical drive mechanism 400, which constitutes the first drive unit that drives the substrate support 300 and the partition plate support 310 (collectively referred to as the substrate holder) in the vertical and rotational directions. In Figure 1, the substrate holder is shown raised by the vertical drive mechanism 400 and stored inside the reaction tube.

[0041] Next, we will explain the details of the substrate support portion, which is the part that supports the substrate S, using Figures 1 and 6. The substrate support section consists of at least a substrate support 300, and within the transfer chamber 217, a vacuum transfer robot transfers the substrate S through a substrate loading port (not shown), and the transferred substrate S is transported into the reaction tube 210 for a process to form a thin film on the surface of the substrate S. The substrate support section may also include a partition plate support section 310.

[0042] The partition plate support section 310 has multiple disc-shaped partition plates 314 fixed at a predetermined pitch to a support column 313 supported between the base 311 and the top plate 312. The substrate support 300 has a configuration in which multiple support rods 315 are supported on the base 311, and multiple substrates S are supported at predetermined intervals by these multiple support rods 315.

[0043] As shown in Figure 6, multiple substrates S are placed horizontally at predetermined intervals on the substrate support 300 by a plurality of support rods 315 supported on the base portion 311. The spaces between the multiple substrates S supported by these support rods 315 are separated by disc-shaped partition plates 314 fixed (for example, supported) at predetermined intervals on pillars 313 supported on the partition plate support portion 310. Here, the partition plates 314 are positioned on either the upper or lower part of the substrates S, or both.

[0044] The predetermined spacing between the multiple substrates S horizontally placed on the substrate support 300 is the same as the vertical spacing between the partition plates 314 fixed to the partition plate support 310. Furthermore, the diameter of the partition plates 314 is larger than the diameter of the substrates S.

[0045] The substrate support 300 supports multiple substrates S vertically in multiple stages using multiple support rods 315. The base 311 and the multiple support rods 315 are made of a material such as quartz or SiC. Here, an example of supporting five substrates S with the substrate support 300 is shown, but it is not limited to this. For example, the substrate support 300 may be configured to support approximately 5 to 50 (more than 5, less than 50) substrates S.

[0046] As shown in Figure 1, the partition plate support 310 and the substrate support 300 are driven by the vertical drive mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217, and in the rotational direction around the center of the substrate S supported by the substrate support 300.

[0047] The first drive unit, the vertical drive mechanism 400, includes a vertical drive motor 410, a rotation drive motor 430, and a boat vertical movement mechanism 420 equipped with a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the vertical direction.

[0048] (Gas supply system) As shown in Figures 2 and 3, in this embodiment, as an example, various gases can be supplied to the distribution sections 222 on both sides in the width direction via the gas supply pipe 251, and various gases can also be supplied to the central distribution section 222 via the gas supply pipe 261. Upstream of the gas supply pipe 251, a gas source, a mass flow controller (MFC) which is a flow control unit, and valves (all not shown) are connected, which are a configuration known to be used in substrate processing equipment.

[0049] As an example, the gas supply pipe 251 is connected to a first gas source that supplies a first gas containing a first element (also called "first element-containing gas"), a second gas source that supplies a second gas containing a second element (also called "second element-containing gas"), and further connected to an inert gas source that supplies an inert gas. The inert gas source supplies an inert gas, such as nitrogen (N2) gas. The inert gas may be a gas other than nitrogen (N2) gas.

[0050] The first gas is a raw material gas, i.e., one of the process gases. Here, the first gas is, for example, a gas in which at least two silicon atoms (Si) are bonded, such as a gas containing Si and chlorine (Cl), and is a disilicon hexachloride (Si2C) as shown in Figure 7A. l6 The source gas is a Si-Si bond-containing gas such as hexachlorodisilane (abbreviated as HCDS), but other gases may also be used. As shown in Figure 7A, HCDS gas contains Si and a chloro group (chloride) in its chemical structure (per molecule).

[0051] This Si-Si bond has enough energy to decompose by colliding with the walls of recesses (not shown) such as grooves in the substrate S, which will be described later, within the reaction tube 210. Here, decomposition means that the Si-Si bond is broken. In other words, the Si-Si bond is broken by collision with the wall.

[0052] Furthermore, gases containing secondary elements are one type of processed gas. Note that gases containing secondary elements may also be considered as reaction gases or reforming gases.

[0053] Here, the second element-containing gas contains a second element different from the first element. The second element is, for example, one of oxygen (O), nitrogen (N), or carbon (C). In this embodiment, the second element-containing gas is, for example, a nitrogen-containing gas. Specifically, it is a hydrogen nitride-based gas containing NH bonds, such as ammonia (NH3), diazene (N2H2) gas, hydrazine (N2H4) gas, or N3H8 gas, but other gases may also be used.

[0054] Furthermore, the inert gas supplied from the inert gas source is used as a purge gas in the substrate processing process to purge any gas remaining in the various pipes, nozzles 227, and reaction tubes 210.

[0055] (Exhaust system) Next, I will explain the exhaust system. As shown in Figure 1, an exhaust system (not shown) for exhausting the atmosphere from the reaction tube 210 is connected to the gas exhaust pipe connection 242.

[0056] The exhaust system is configured to evacuate the reaction tube 210 to a predetermined pressure (e.g., vacuum) by connecting a valve as an on / off valve and an APC (Auto Pressure Controller) valve as a pressure regulator (e.g., a pressure adjustment unit) to a vacuum pump. The exhaust system is also called the processing chamber exhaust system.

[0057] (controller) The substrate processing apparatus 100 has a controller 600, shown in Figure 8, which controls the operation of each part of the substrate processing apparatus 100.

[0058] The controller 600, which is the control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 601, RAM (Radom Access Memory) 602, a storage unit 603 as a memory unit, and I / O ports 604. The RAM 602, storage unit 603, and I / O ports 604 are configured to exchange data with the CPU 601 via an internal bus 605. Data transmission and reception within the board processing device 100 are performed by instructions from the transmit / receive instruction unit 606, which is also a function of the CPU 601.

[0059] The controller 600 is equipped with a network transceiver 683 that is connected to the host device 670 via a network. The network transceiver 683 can receive information such as the processing history and processing schedule of the substrate S stored in a pod (not shown) from the host device 670.

[0060] The storage unit 603 is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage unit 603 contains, in a readable format, control programs that control the operation of the substrate processing device, and process recipes that describe the procedures and conditions for substrate processing.

[0061] The process recipe is a combination of steps in the substrate processing process described later that can be executed by the controller 600 to obtain a predetermined result, and functions as a program. Hereinafter, this process recipe and control program will be collectively referred to simply as the program. In this specification, the term "program" may include only the process recipe, only the control program, or both. The RAM 602 is configured as a memory area (e.g., a work area) where programs and data read by the CPU 601 are temporarily held.

[0062] The I / O port 604 is connected to each component of the substrate processing device 100. The CPU 601 is configured to read and execute control programs from the memory unit 603, and to read process recipes from the memory unit 603 in response to input of operation commands from the input / output device 681, etc. The CPU 601 is then configured to control the substrate processing device 100 in accordance with the contents of the read process recipe.

[0063] The CPU 601 has a transmit / receive instruction unit 606. The controller 600 according to this embodiment can be configured by installing the program on a computer using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 682 that stores the program described above. Note that the device (means) for supplying the program to the computer is not limited to supplying it via the external storage device 682. For example, the program may be supplied without going through the external storage device 682 by using a communication device (for example, a communication means) such as the Internet or a dedicated line. Note that the storage unit 603 and the external storage device 682 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. Note that in this specification, when the term recording media is used, it may include only the storage unit 603, only the external storage device 682, or both.

[0064] (Processing steps) Next, we will describe a step in the semiconductor manufacturing process, specifically the process of forming a thin film on a substrate S using the substrate processing apparatus 100 with the configuration described above. In the following description, the operation of each component of the substrate processing apparatus is controlled by the controller 600.

[0065] Here, we will explain a film deposition process using Figure 9, in which a film is formed on a substrate S by alternately supplying a first gas and a second gas.

[0066] (S202) First, the transfer chamber pressure adjustment process S202 will be explained. Here, the pressure inside the transfer chamber 217 is set to a vacuum level. Specifically, an exhaust system (not shown) connected to the transfer chamber 217 is activated to exhaust the atmosphere inside the transfer chamber 217 so that the atmosphere inside the transfer chamber 217 becomes a vacuum level.

[0067] The heater 211 may be operated in parallel with this process. If the heater 211 is operated, it should be operated for at least the duration of the film processing process S208 described later.

[0068] (S204) Next, the substrate loading process S204 will be explained (an example of a process for loading the substrates of this disclosure). The transfer chamber 217 is set to a vacuum level, and the substrate S is transported into the transfer chamber 217 from an adjacent vacuum transport chamber (not shown).

[0069] At this time, the substrate support 300 is kept waiting in the transfer chamber 217, and the substrates S are transferred to the substrate support 300. Once a predetermined number of substrates S have been transferred to the substrate support 300, the vacuum transfer robot is moved to the side, and the substrate support 300 is raised to move the substrates S into the reaction tube 210.

[0070] During transfer to the reaction tube 210, the substrate S is positioned so that it is at the same height as the nozzle 227.

[0071] (S206) The heating process S206 will now be described. Once the substrate S is placed into the reaction tube 210, the heater 211 is controlled so that the surface temperature of the substrate S reaches a predetermined temperature. As an example, the temperature is in the high-temperature range described later, for example, heated to 400°C or higher and 800°C or lower. Preferably, it is 500°C or higher and 700°C or lower, but it is not limited to these temperatures.

[0072] (S208) The film processing step S208 will now be described. The film processing step S208 is performed after the heating step S206. In the film processing step S208, according to the process recipe, the first gas is supplied into the reaction tube 210, and the exhaust system 280 is controlled to exhaust the processing gas from inside the reaction tube 210, thereby performing the film processing. This film processing step S208 corresponds to the step of supplying the processing gas to the substrate S of this disclosure. In this case, the first gas and the second gas may be supplied alternately into the reaction tube 210 to perform an alternating supply process, or the second gas may be present in the processing space simultaneously with the first gas to perform the CVD process. The supply and exhaust of gases inside the reaction tube 210 are controlled so that a predetermined pressure is maintained.

[0073] As a specific example of a membrane processing method, the following alternating supply process can be considered. For example, in the first step, a first gas is supplied into the reaction tube 210, in the second step, a second gas is supplied into the reaction tube 210, and as a purging step, an inert gas is supplied into the reaction tube 210 between the first and second steps, and the atmosphere in the reaction tube 210 is evacuated. The alternating supply process is performed by repeating the combination of the first step, the purging step, and the second step multiple times to form the desired membrane.

[0074] The supplied gas forms an optimal gas flow for processing the substrate S through the nozzle 227, the space on the substrate S, and the downstream flow straightening section 215. For example, when supplying the first gas into the reaction tube 210, the first gas is supplied to at least two gas inlet sections 506. Here, the first gas is supplied from the distribution sections 222 on both sides toward the nozzle 227. The first gas supplied from the distribution section 222 passes through the gas inlet sections 506 on both sides of the nozzle toward the reaction tube 210, and a portion flows through the connecting section 520 of the vertical plate-shaped member 504 to the adjacent gas inlet section 506 on the central side of the nozzle. As a result, the same amount of first gas can be discharged at the same speed along the surface of the substrate S from the downstream ends of the gas inlet sections 506 on both sides and the downstream end of the central gas inlet section 506. Furthermore, since the nozzle 227 has a connecting section 520 and the vertical plate-shaped members 504 on both sides extend outward in the width direction from the upstream side to the downstream side of the processing gas flow, the first gas is supplied to the surface of the substrate S in a wide, symmetrical flow relative to the substrate S. Furthermore, the first gas is ejected horizontally from the nozzle 227 and supplied parallel to the surface of the horizontally positioned substrate S, uniformly treating the surface of the substrate S.

[0075] As shown in Figure 2, the inclined vertical plate-shaped members 504 on both sides are inclined toward the edge E in the width direction (the same direction as the width direction of the nozzle 227; the direction of arrow W in Figure 2) of the substrate S housed in the reaction tube 210. Therefore, the flow of the first gas supplied to the surface of the substrate S is rectified by the gas rectifier member 500 so that it becomes a wide, symmetrical flow, allowing the entire surface of the substrate S to be treated uniformly using the first gas. Furthermore, as shown in Figure 1, the nozzle 227 is provided in multiple stages in the height direction of the substrate holder, and a nozzle 227 is provided for each substrate S, so uniform treatment is possible for each substrate S.

[0076] As shown in Figure 4, in the nozzle 227, setting the width Wb of the communication section 520 to 5-10% (5 or more, 10 or less) of the width WA of the gas introduction section 506 optimizes the amount of gas entering from the gas introduction sections 506 on both sides in the nozzle width direction to the gas introduction section 506 on the central side in the nozzle width direction. If the width Wb of the communication section 520 is 5% or less of the width WA of the gas introduction section, the gas directivity becomes stronger, and the gas flow becomes stronger in the direction of the vertical plate-shaped member 504, which is provided on the reaction tube 210 side and is inclined to widen the gap with the central vertical plate-shaped member 504. Also, if the width Wb of the communication section 520 is 10% or more of the width WA of the gas introduction section, the directivity becomes weaker, and the gas flow becomes stronger towards the center of the wafer 200. This makes it possible to equalize the amount and speed of the first gas discharged from each gas inlet 506 toward the substrate S, and furthermore, it is possible to increase the average flow velocity of the gas discharged from each gas inlet 506. Furthermore, when the second gas is supplied into the reaction tube 210, the gas flow is rectified by the gas rectifier 500, just as when the first gas is supplied into the reaction tube 210, allowing the entire surface of the substrate S to be treated uniformly.

[0077] Furthermore, if the gas velocity discharged from each gas inlet differs from one gas inlet to another, in other words, if there is a gas inlet where the gas velocity is excessive, a vortex may be generated downstream of that gas inlet, causing multiple adsorptions at specific locations on the substrate S, which may lead to singularities. In addition, if the gas velocity is excessive, when processing a substrate S with grooves (e.g., recesses; not shown) formed on its surface, the gas may have difficulty reaching the bottom of the grooves, potentially resulting in processing defects at the bottom of the grooves. However, in the nozzle 227 of this embodiment, the amount and flow rate of gas discharged from each gas introduction section 506 toward the substrate S can be made uniform, thereby suppressing the occurrence of singularities and defects in the processing of the groove bottom. As described above, this disclosure provides one or more effects.

[0078] (S210) The substrate removal process S210 will now be explained. In S210, the processed substrate S is removed from the transfer chamber 217 in the reverse order of the substrate loading process S204 described above.

[0079] (S212) Let's explain the determination S212. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading process S204 and processes the next substrate S. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0080] Furthermore, the above uses expressions such as "of the same degree," "equivalent," and "equal," but these include things that are essentially the same. That goes without saying.

[0081] (Other gas supply methods, part 1) In the nozzle 227 of this embodiment, the first gas or the second gas can be diluted with an inert gas (for example, nitrogen gas (N2)) and supplied to the substrate S. For example, an inert gas is supplied to at least two gas inlet 506s other than the two gas inlet 506s that supply the processing gas. When the first gas is diluted with an inert gas, the first gas is supplied from the distribution unit 222 to the gas inlet 506s on both sides of the nozzle, and the inert gas is supplied from the distribution unit 224 to the gas inlet 506 on the central side of the nozzle.

[0082] As a result, a portion of the first gas flowing through the gas inlet sections 506 on both sides of the nozzle enters the adjacent gas inlet section 506 on the nozzle center side via the connecting section 520 of the vertical plate-shaped member 504, and a portion of the inert gas flowing through the gas inlet section 506 on the nozzle center side enters the adjacent gas inlet sections 506 on both sides of the nozzle via the connecting section 520. As a result, in each gas inlet section 506, the first gas and the inert gas are uniformly mixed within the gas inlet section 506 before reaching the downstream end of each gas inlet section 506, and the first gas, uniformly diluted with the inert gas, can be supplied from each gas inlet section 506 toward the substrate S.

[0083] Furthermore, to avoid excessive dilution of the process gas, the flow rate of the inert gas is preferably set to 10% or less of the flow rate of the process gas, for example.

[0084] (Other gas supply methods, part 2) Furthermore, in the nozzle 227 of this embodiment, multiple gases of different types, for example, a first gas and a second gas, can be mixed inside the nozzle 227, and the mixed gas of the first gas and the second gas can be discharged toward the substrate S.

[0085] In this case, the first gas is supplied to at least two gas inlet sections 506, for example, one of the gas inlet sections 506 on the nozzle's central side, and the second gas is supplied to the other adjacent gas inlet section. As a result, the first gas and the second gas move back and forth between the gas inlet section 506 on the nozzle's central side and the other gas inlet section 506 via the communication section 520 of the vertical plate-shaped member 504. This allows the first gas and the second gas to mix uniformly by the time they reach the downstream end of the gas inlet section 506, and furthermore, the mixed gas is allowed to enter the gas inlet sections 506 on both sides in the nozzle's width direction, and the mixed gas can be discharged from each gas inlet section 506 toward the substrate S by the time it reaches the downstream end. This allows the entire surface of the substrate S to be treated uniformly with the mixed gas. Alternatively, an inert gas may be supplied to the gas inlets 506 other than the two adjacent gas inlets 506 that supply different types of gas, in this case, the gas inlets 506 on both sides of the nozzle, to dilute the mixed gas. In this case, it is preferable that the flow rate of the inert gas be 50% or less of the flow rate of the mixed gas, which is a mixture of the two types of processing gases (to prevent over-dilution). If the flow rate of the inert gas is 50% or more of the flow rate of the mixed gas, the mixed gas will be over-diluted. Also, if the flow rate of the inert gas is 50% or more of the flow rate of the mixed gas, more diluted mixed gas will flow from the gas inlets 506 on both sides of the nozzle where the inert gas is supplied than from the center side of the nozzle.

[0086] In the substrate processing apparatus 100 of this embodiment, different types of gases are mixed inside the nozzle 227, so different types of gases do not mix in each distribution unit, and therefore, the generation of particles that may occur due to gas mixing in each distribution unit can be suppressed.

[0087] (Other forms) Although embodiments of this model have been described in detail above, the model is not limited thereto, and various modifications are possible without departing from its essence.

[0088] Furthermore, while the embodiments described above illustrate the film formation process performed by the substrate processing apparatus 100 using a first gas and a second gas to form a film on the substrate S, this embodiment is not limited to this. In other words, other types of gases may be used as processing gases to form other types of thin films. Moreover, even when using three or more types of processing gases, this embodiment can be applied as long as they are supplied alternately to perform the film formation process. Specifically, the first element may be various elements such as titanium (Ti), silicon (Si), zirconium (Zr), hafnium (Hf), etc. The second element may be nitrogen (N), oxygen (O), etc. However, as mentioned above, Si is more preferable as the first element.

[0089] Here, HCDS gas is used as an example of the first gas, but it is not limited to HCDS as long as it contains silicon and has Si-Si bonds. For example, tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviation: TCDMDS) or dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviation: DCTMDS) may also be used. As shown in Figure 7B, TCDMDS has Si-Si bonds and also contains chloro and alkylene groups. Similarly, as shown in Figure 7C, DCTMDS has Si-Si bonds and also contains chloro and alkylene groups.

[0090] Furthermore, while the above-described embodiments used film deposition as an example of a process performed by the substrate processing apparatus, this embodiment is not limited to this. That is, this embodiment can be applied not only to the film deposition processes exemplified in each embodiment, but also to film deposition processes other than thin films exemplified in each embodiment. It is also possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add a configuration from another embodiment to the configuration of one embodiment. In addition, it is possible to add, delete, or replace parts of the configuration of each embodiment with other configurations.

[0091] In the above embodiment, four gas introduction sections 506 are provided inside the nozzle 227 in the nozzle width direction. However, the number of vertical plate-shaped members 504 provided on the gas rectifier member 500 may be increased to provide five or more gas introduction sections 506 in the nozzle width direction, and the number of gas rectifier members 500 can be increased or decreased as needed. In either case, gas can be supplied to at least two of the multiple gas inlets 506. Furthermore, gas may be supplied to three or more gas inlets 506 as needed.

[0092] In the above embodiment, a gas rectifier 500 is placed inside the nozzle 227, and the inside of the nozzle is divided vertically into two halves, with four gas inlet sections 506 arranged horizontally on the upper and lower sides. However, the inside of the nozzle 227 can be divided vertically only as needed, or it is not necessary to divide the inside of the nozzle 227 vertically.

[0093] In the above embodiment, when supplying the first gas and the second gas to the substrate S individually, gas was not supplied to the gas inlet 506 on the central side in the nozzle width direction, but only to the gas inlet 506 on both sides in the nozzle width direction. However, gas may also be not supplied to the gas inlet 506 on both sides in the nozzle width direction, but only to the gas inlet 506 on the central side in the nozzle width direction. In this case as well, ultimately, the same amount of the first gas or the second gas can be discharged at the same speed along the surface of the substrate S from the downstream ends of the gas inlet 506 on both sides and the downstream end of the gas inlet 506 on the central side.

[0094] In the gas rectifier member 500 of the above embodiment, a communication portion 518 is provided at the widthwise end of the horizontal plate-shaped member 502. For example, the gas flowing to the two upper and lower gas inlet portions 506 provided on both sides in the nozzle width direction can enter each other through the communication portion 518. For this reason, as an example, the first gas can be supplied to one of the two upper and lower gas inlet portions 506, and the second gas can be supplied to the other of the two upper and lower gas inlet portions 506, thereby mixing the first gas and the second gas in the nozzle 227, and the mixed gas can be discharged from the upper and lower gas inlet portions 506 toward the substrate S. In this case, it is necessary to change the structure of the gas supply structure 212 so that different types of gas are supplied to the upper gas inlet portion 506 and the lower gas inlet portion 506.

[0095] Furthermore, when supplying the same gas to the two upper and lower gas introduction sections 506 on both sides in the nozzle width direction, there is no need to mix the gas within the nozzle 227, so the communication section 518 on the widthwise end of the horizontal plate-shaped member 502 may be omitted.

[0096] In the gas rectifier member 500, as an example, the diameter of the holes 514 provided in the downstream wall 512 corresponding to the gas inlet 506 on both sides in the nozzle width direction can be made smaller than the diameter of the holes 514 provided in the downstream wall 512 corresponding to the two gas inlet 506 on the central side in the nozzle width direction.

[0097] As a result, the resistance to gas passage when it passes through the holes 514 in the wall 512 corresponding to the gas inlet 506 on both sides in the nozzle width direction is greater than the resistance to gas passage when it passes through the holes 514 in the wall 512 corresponding to the gas inlet 506 on the central side in the nozzle width direction. This causes the internal pressure of the gas inlet 506 on both sides in the nozzle width direction to be relatively higher than the internal pressure of the gas inlet 506 on the central side in the nozzle width direction. This makes it possible to increase the amount of gas that enters the gas inlet 506 on the central side in the nozzle width direction from the gas inlet 506 on both sides in the nozzle width direction via the communication section 520.

[0098] In other words, by changing the diameter of the hole 514, the amount of gas passing through the connecting section 520 that allows gas to enter from one adjacent gas inlet 506 to the other gas inlet 506 can be controlled. Furthermore, in the nozzle 227, the amount of gas passing through the communication section 520 can be controlled by changing the width Wa of the communication section 520.

[0099] In the gas rectifier member 500 described in the above embodiment, a wall 512 was provided on the downstream side, but the wall 512 may be provided only if necessary, and as shown in Figure 10, the wall 512 may not be provided. Similarly, the wall 508 on the upstream side may be provided only if necessary, and may not be provided at all. In the gas rectifier member 500 shown in Figure 10, the same reference numerals are used for components identical to those in the gas rectifier member 500 shown in Figure 5, and their descriptions are omitted.

[0100] Furthermore, the connecting sections 518 and 520 should be provided at the necessary locations so that the flow of the processing gas is a wide, symmetrical flow with respect to the substrate S.

[0101] The nozzles 227 can be stacked according to the number of substrates S to be processed; if processing one substrate S, only one nozzle 227 is needed. This disclosure can also be applied when processing one substrate S, and the same effects as in the above embodiment can be obtained.

[0102] Although the gas rectifier member 500 described in the above embodiment is made of a plate-shaped member, it may be made of a member other than a plate-shaped member.

[0103] In this specification, the term "substrate" may refer to the substrate itself or to a laminate of a substrate and a predetermined layer or film formed on its surface. In this specification, the term "surface of the substrate" may refer to the surface of the substrate itself or to the surface of a predetermined layer formed on the substrate. In this specification, when it is stated that "a predetermined layer is formed on the substrate," it may mean that the predetermined layer is formed directly on its surface or that the predetermined layer is formed on top of a layer already formed on the substrate. In this specification, the term "substrate" is synonymous with the term "wafer."

[0104] Furthermore, although not specifically described in the above embodiments, unless otherwise specified in the specification, each element is not limited to one, and there may be multiple elements.

[0105] Furthermore, the above embodiments described an example of forming a film using a substrate processing apparatus that processes multiple substrates. This disclosure is not limited to the above embodiments and can be suitably applied, for example, to forming a film using a substrate processing apparatus that processes a single substrate. This disclosure can also be suitably applied to substrate processing apparatuses having a cold-wall type processing furnace or a hot-wall type processing furnace, and is applicable to substrate processing apparatuses having nozzles that blow processing gas along the substrate.

[0106] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and processing conditions as described in the above-described embodiments and modifications, and the same effects as described in the above-described embodiments and modifications can be obtained. Furthermore, the above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications. [Explanation of symbols]

[0107] 100 Substrate Processing Equipment 210 Reaction tube (processing chamber) 227 Nozzles 251 Gas supply pipe (gas supply section) 506 Gas Inlet 518 Communication section 520 Communication part

Claims

1. A processing room for processing substrates, A nozzle comprising: multiple gas introduction sections for introducing gas; a connecting section for partially connecting the multiple gas introduction sections; The system comprises a plurality of gas supply units that supply gas to the gas inlet, A substrate processing apparatus in which an inert gas is supplied from the gas supply unit to gas introduction units other than the gas introduction unit to which the processing gas is supplied.

2. Multiple gas introduction sections are formed by gas rectifying members arranged inside the nozzle. The aforementioned communication portion is provided between the inner wall of the nozzle and the outer edge of the gas rectifier member. The substrate processing apparatus according to claim 1.

3. The gas is supplied from the gas supply unit to at least two of the plurality of gas inlets. A substrate processing apparatus according to claim 1 or claim 2.

4. The flow rate of the inert gas supplied from the gas supply unit is 10% or less of the flow rate of the processing gas. The substrate processing apparatus according to claim 1.

5. The gas rectifier member is composed of a plate-shaped member. The substrate processing apparatus according to claim 2.

6. The plate-shaped member includes a horizontal plate-shaped member and a vertical plate-shaped member, and the horizontal plate-shaped member and the vertical plate-shaped member form the plurality of gas introduction sections inside the nozzle. The substrate processing apparatus according to claim 5.

7. The end surface of the horizontal plate-shaped member or the vertical plate-shaped member is provided with at least one protrusion that contacts the inner wall of the nozzle and constitutes the communication portion. The substrate processing apparatus according to claim 6.

8. The processing chamber has a substrate holder capable of stacking multiple substrates. The substrate processing apparatus according to claim 1.

9. The nozzles are arranged in multiple stages in the height direction of the substrate holder. The substrate processing apparatus according to claim 8.

10. A processing chamber for processing substrates, A nozzle comprising: multiple gas introduction sections for introducing gas; a connecting section for partially connecting the multiple gas introduction sections; The system comprises a plurality of gas supply units that supply gas to the gas inlet, The aforementioned communication section is a substrate processing apparatus that enables the mixing of two types of processing gases introduced into the gas introduction section inside the nozzle.

11. When mixing the two types of processing gases, the two types of processing gases are supplied to two adjacent gas inlets among the plurality of gas inlets. The substrate processing apparatus according to claim 10.

12. Of the aforementioned plurality of gas inlets, inert gas is supplied to all but two adjacent gas inlets. The substrate processing apparatus according to claim 11.

13. The flow rate of the inert gas supplied from the gas supply unit is 50% or less of the flow rate of the mixed gas obtained by mixing the two types of processing gases. The substrate processing apparatus according to claim 12.

14. The gas is supplied parallel to the surface of the substrate, The substrate processing apparatus according to claim 1.

15. The vertical plate-shaped members on both sides in the width direction extend outward in the width direction from the upstream side to the downstream side of the flow of the processed gas. The substrate processing apparatus according to claim 6.

16. The width of the communication section is 5 to 10% of the width of the gas introduction section. The substrate processing apparatus according to claim 2.

17. A nozzle for introducing a processing gas into a processing chamber for processing substrates, It comprises multiple gas introduction sections for introducing gas supplied from multiple gas supply sections, and a connecting section for partially connecting the multiple gas introduction sections, A nozzle to which an inert gas is supplied from the gas supply unit to gas inlet sections other than the gas inlet section to which the processing gas is supplied.

18. A nozzle for introducing a processing gas into a processing chamber for processing a substrate, Multiple gas inlet sections for introducing gas, A connecting section that partially connects multiple gas introduction sections, The system comprises a plurality of gas supply units that supply gas to the gas inlet, The aforementioned communication section is a nozzle that allows two types of processing gases introduced into the gas introduction section to be mixed inside the nozzle.

19. The process of transporting the circuit board into the processing room, A process of supplying gas to a processing chamber from nozzles that supply inert gas from the gas supply units to gas introduction units other than those supplied with processing gas, comprising: multiple gas introduction units for introducing gas supplied from multiple gas supply units; and a communication unit that partially connects the multiple gas introduction units. A method for manufacturing a semiconductor device having [a certain feature].

20. The procedure for transporting substrates into the processing chamber of the substrate processing equipment, A procedure for supplying gas to a processing chamber from nozzles supplied with inert gas from the gas supply units, comprising: multiple gas introduction units for introducing gas supplied from multiple gas supply units; and multiple communication units for partially connecting the multiple gas introduction units; and the gas introduction units other than those supplied with processing gas being supplied with inert gas from the gas supply units. A program that causes the substrate processing device to execute the following using a computer.

Images