Plasma processing apparatus and plasma processing method

Abstract

To provide a technique capable of simplifying wiring in a processing container in a batch-type plasma processing device.SOLUTION: A plasma processing device includes: a processing container; a plurality of parallel plate electrodes arranged in multiple stages inside the processing container; and a power supply unit configured to supply electric power from the outside of the processing container to the plurality of parallel plate electrodes in a non-contact manner.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus and a plasma processing method.

Background Art

[0002] There is known a batch-type plasma processing apparatus that performs plasma processing on a plurality of substrates at once by supplying RF power to a plurality of parallel plate electrodes to generate plasma (see, for example, Patent Document 1). There is known a substrate processing apparatus in which an electrode for plasma-exciting a processing gas, a power receiving unit electrically connected to the electrode, and a protective container that hermetically houses the electrode and the power receiving unit are provided inside a reaction tube, and a power supply unit is provided outside the reaction tube (see, for example, Patent Document 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for simplifying wiring inside a processing container in a batch-type plasma processing apparatus.

Means for Solving the Problems

[0005] A film forming method according to an aspect of the present disclosure includes a processing container, a plurality of parallel plate electrodes arranged in multiple stages inside the processing container, and a power supply unit that supplies power to the plurality of parallel plate electrodes non-contact from outside the processing container. Each of the plurality of parallel plate electrodes has an upper electrode and a lower electrode provided below the upper electrode and facing the upper electrode, and the power supply unit has a first internal electrode provided inside the processing container and electrically connected to the upper electrode, a first external electrode provided outside the processing container and transmitting power to the first internal electrode by electric field coupling, a second internal electrode provided inside the processing container and electrically connected to the lower electrode, and a second external electrode provided outside the processing container and transmitting power to the second internal electrode by electric field coupling, and in a plan view from above, the first internal electrode is provided in a position that does not overlap with the second internal electrode. .

Effects of the Invention

[0006] According to this disclosure, the wiring inside the processing vessel in a batch-type plasma processing apparatus can be simplified. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram showing a plasma processing apparatus according to the first embodiment. [Figure 2] Figure 2 is a cross-sectional view showing the configuration inside the processing container. [Figure 3] Figure 3 is a top view including the internal electrodes. [Figure 4] Figure 4 is a perspective view (1) including the internal and external electrodes. [Figure 5] Figure 5 is a perspective view (2) including the internal and external electrodes. [Figure 6] Figure 6 is a schematic diagram (1) showing an example of a moving mechanism. [Figure 7] Figure 7 is a schematic diagram (2) showing an example of a moving mechanism. [Figure 8] Figure 8 is a schematic diagram showing a plasma processing apparatus according to the second embodiment. [Figure 9] Figure 9 is a schematic diagram showing a plasma processing apparatus according to the third embodiment. [Figure 10] Figure 10 is a schematic diagram showing a plasma processing apparatus according to the fourth embodiment. [Figure 11] Figure 11 is a schematic diagram showing a plasma processing apparatus according to the fifth embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [First Embodiment] (Plasma treatment device) Referring to Figure 1, the plasma processing apparatus 1A according to the first embodiment will be described. Figure 1 is a schematic diagram showing the plasma processing apparatus 1A according to the first embodiment.

[0010] As shown in Figure 1, the plasma processing apparatus 1A is a batch-type apparatus that performs plasma processing on multiple substrates W (Figure 2) at once. The substrates W are, for example, semiconductor wafers. The plasma processing apparatus 1A comprises a processing container 10, a gas supply unit 20, an exhaust unit 30, a plasma generation unit 40, a moving mechanism 50 (Figure 6), and a control unit 90. In Figure 1, the moving mechanism 50, substrates W, etc. are omitted from the illustration.

[0011] The processing container 10 has a bottom portion 11, a top portion 12, and side portions 13. The processing container 10 forms a sealed internal space A1 by the bottom portion 11, the top portion 12, and the side portions 13. The top portion 12 faces the bottom portion 11. The side portions 13 connect the bottom portion 11 and the top portion 12. The side portions 13 include a flat portion 13a. The flat portion 13a is provided with overhangs 13b that extend outward from the processing container 10. Multiple overhangs 13b are provided at intervals in the vertical direction. The overhangs 13b are provided at the height position where the upper electrode 41a (described later) is provided and at the height position where the lower electrode 41b is provided. An exhaust port 13c is provided in the side portions 13. The bottom portion 11, the top portion 12, and the side portions 13 are made of, for example, quartz. The processing container 10 is heated by heaters (not shown) provided around it.

[0012] The gas supply unit 20 includes a gas nozzle 21, a gas supply path 22, a gas source 23, a mass flow controller 24, and a valve 25. The gas nozzle 21 extends horizontally through the processing container 10 and bends in an L shape and extends upward within the processing container 10. The base end of the gas nozzle 21 is located outside the processing container 10, and the tip end is located inside the processing container 10. The gas nozzle 21 has an open base end and a closed tip end. The gas supply path 22 is connected to the base end of the gas nozzle 21. The gas source 23, the mass flow controller 24, and the valve 25 are provided in the gas supply path 22 in order from the upstream side to the downstream side in the flow direction of the processing gas. Thereby, the supply timing of the processing gas from the gas source 23 is controlled by the valve 25, and the flow rate is adjusted to a predetermined value by the mass flow controller 24. The processing gas flows from the gas supply path 22 into the gas nozzle 21 and is discharged from the gas nozzle 21 into the processing container 10. A plurality of discharge holes 21h are provided at a portion of the gas nozzle 21 located inside the processing container 10. The plurality of discharge holes 21h are provided at predetermined intervals along the vertical direction. Each discharge hole 21h discharges the processing gas in the horizontal direction. The gas supply unit 20 may further include a gas nozzle different from the gas nozzle 21.

[0013] The exhaust unit 30 includes an exhaust passage 31, a pressure regulating valve 32, and a vacuum pump 33. The exhaust passage 31 is connected to the exhaust port 13c. The pressure regulating valve 32 and the vacuum pump 33 are provided in the exhaust passage 31 in order from the upstream side to the downstream side in the flow direction of the processing gas. Thereby, the exhaust flow rate of the processing gas in the processing container 10 is controlled by the pressure regulating valve 32, and the processing gas is discharged outside the processing container 10 by the vacuum pump 33. The vacuum pump 33 includes, for example, a dry pump and a turbo molecular pump.

[0014] The plasma generation unit 40 generates plasma from the processing gas supplied into the processing container 10. Details of the plasma generation unit 40 will be described later.

[0015] The moving mechanism 50 moves the components inside the processing container 10 along the horizontal and vertical directions. Details of the moving mechanism 50 will be described later.

[0016] The control unit 90 controls the operations of each part of, for example, the plasma processing apparatus 1A. The control unit 90 may be, for example, a computer. The program of the computer that performs the operations of each part of the plasma processing apparatus 1A is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0017] (Plasma generation unit) Referring to FIGS. 1 to 5, the plasma generation unit 40 will be described. FIG. 2 is a cross-sectional view showing the configuration inside the processing container 10. FIG. 3 is a top view including the internal electrodes. FIG. 4 is a diagram showing the positional relationship between the internal electrodes and the external electrodes when performing plasma processing on the substrate W. FIG. 5 is a diagram showing the positional relationship between the internal electrodes and the external electrodes when loading or unloading the substrate W.

[0018] As shown in FIGS. 1 and 2, the plasma generation unit 40 includes a parallel plate electrode 41, a first power supply unit 42, a second power supply unit 43, a covering member 44, a support member 45, a power supply line 46, a matcher 47, and an RF power supply 48.

[0019] The parallel plate electrodes 41 are arranged in multiple stages inside the processing container 10. Each parallel plate electrode 41 has an upper electrode 41a and a lower electrode 41b. The upper electrode 41a and the lower electrode 41b are provided in a horizontal posture. The upper electrode 41a and the lower electrode 41b have a circular shape with the same diameter in a plan view from above. The lower electrode 41b is provided below the upper electrode 41a and opposite to the upper electrode 41a. The upper electrode 41a and the lower electrode 41b are alternately provided with a gap in the vertical direction. The distance L1 between the lower surface of the upper electrode 41a and the upper surface of the adjacent lower electrode 41b below the upper electrode 41a may be, for example, longer than the distance L2 between the upper surface of the upper electrode 41a and the lower surface of the adjacent lower electrode 41b above the upper electrode 41a.

[0020] The first power supply unit 42 supplies power to a plurality of upper electrodes 41a from outside the processing container 10 without contact. The first power supply unit 42 has a first internal electrode 42a, a first connecting electrode 42b, and a first external electrode 42c.

[0021] The first internal electrode 42a is provided in a horizontal position within the processing container 10. The first internal electrode 42a may be horizontally movable between a position facing the first external electrode 42c (Figure 4) and a position not facing the first external electrode 42c (Figure 5). The position facing the first external electrode 42c may be a position in which at least a part of the first internal electrode 42a is housed inside the protruding portion 13b, for example, as shown in Figure 2. In a plan view from above, the first internal electrode 42a has, for example, a rectangular shape.

[0022] The first connecting electrode 42b is provided in the same plane as the upper electrode 41a and the first internal electrode 42a. The first connecting electrode 42b electrically connects the upper electrode 41a and the first internal electrode 42a.

[0023] The first external electrode 42c is provided outside the processing vessel 10, facing the first internal electrode 42a. The first external electrode 42c transmits power to the first internal electrode 42a by electric field coupling. The first external electrode 42c is attached, for example, to the lower surface of the protruding portion 13b in which the first internal electrode 42a is housed. The first external electrode 42c transmits power to the first internal electrode 42a through the wall surface of the protruding portion 13b. The distance L3 between the upper surface of the first external electrode 42c and the lower surface of the first internal electrode 42a is set to be narrower than the distance L1. In this case, it is easier to prevent plasma generation between the first external electrode 42c and the first internal electrode 42a. The distance L3 may be, for example, 0.3 times or less of the distance L1.

[0024] The second power supply unit 43 supplies power to a plurality of lower electrodes 41b from outside the processing container 10 without contact. The second power supply unit 43 has a second internal electrode 43a, a second connecting electrode 43b, and a second external electrode 43c.

[0025] The second internal electrode 43a is provided in a horizontal position within the processing container 10. The second internal electrode 43a may be horizontally movable between a position facing the second external electrode 43c (Figure 4) and a position not facing the second external electrode 43c (Figure 5). The position facing the second external electrode 43c may be a position in which at least a part of the second internal electrode 43a is housed inside the protruding portion 13b, for example, as shown in Figure 2. In a plan view from above, the second internal electrode 43a has, for example, a rectangular shape.

[0026] The second connecting electrode 43b is provided in the same plane as the lower electrode 41b and the second internal electrode 43a. The second connecting electrode 43b electrically connects the lower electrode 41b and the second internal electrode 43a.

[0027] The second external electrode 43c is provided outside the processing vessel 10, facing the second internal electrode 43a. The second external electrode 43c transmits power to the second internal electrode 43a by electric field coupling. The second external electrode 43c is attached, for example, to the lower surface of the protruding portion 13b in which the second internal electrode 43a is housed. The second external electrode 43c transmits power to the second internal electrode 43a via the wall surface of the protruding portion 13b. The distance L4 between the upper surface of the second external electrode 43c and the lower surface of the second internal electrode 43a is set to be narrower than the distance L1. In this case, it is easier to prevent plasma generation between the second external electrode 43c and the second internal electrode 43a. The distance L4 may be, for example, 0.3 times or less of the distance L1. The distance L5 between the lower surface of the second external electrode 43c and the upper surface of the first internal electrode 42a adjacent to the second external electrode 43c below the second external electrode 43c may be shorter than the distance L1. In this case, it is possible that plasma may be generated between the second external electrode 43c and the first internal electrode 42a adjacent to the second external electrode 43c below it. In this regard, the space A2 between the lower surface of the upper electrode 41a and the upper surface of the lower electrode 41b adjacent to the upper electrode 41a below it is a reduced-pressure atmosphere, while the space A3 between the second external electrode 43c and the first internal electrode 42a is an atmospheric pressure atmosphere. Therefore, the voltage required for plasma ignition in space A3 is several tens of times or more the voltage required for plasma ignition in space A2. As a result, no plasma is generated in space A3.

[0028] The covering member 44 includes a first covering member 44a, a second covering member 44b, and a third covering member 44c.

[0029] The first covering member 44a covers the upper electrode 41a, the first internal electrode 42a, and the first connection electrode 42b. The first covering member 44a protects the upper electrode 41a, the first internal electrode 42a, and the first connection electrode 42b from the plasma generated in the processing container 10. The first covering member 44a is formed of, for example, an insulating material.

[0030] The second covering member 44b covers the lower electrode 41b, the second internal electrode 43a, and the second connection electrode 43b. The second covering member 44b protects the lower electrode 41b, the second internal electrode 43a, and the second connection electrode 43b from the plasma generated in the processing container 10. A substrate W is placed on the second covering member 44b. The second covering member 44b is formed of, for example, an insulating material.

[0031] The third covering member 44c connects the upper surface of the upper electrode 41a and the lower surface of the lower electrode 41b adjacent above the upper electrode 41a, and forms an internal space A4 sealed between the upper electrode 41a and the lower electrode 41b. The pressure in the internal space A4 is set higher than the pressure in the internal space A1, for example, by introducing an inert gas. When the pressure in the internal space A4 is sufficiently high, according to Paschen's law, the breakdown voltage of the internal space A4 is increased compared to the internal space A1, and the ignition of plasma between the upper surface of the upper electrode 41a and the lower surface of the lower electrode 41b can be suppressed. If the pressure conditions of the internal space A4 are appropriately selected, even when the distance L2 < L1, it is possible to eliminate the generation of unnecessary plasma in the internal space A4. Therefore, plasma can be efficiently generated between the lower surface of the upper electrode 41a and the upper surface of the lower electrode 41b. The pressure in the internal space A4 may be, for example, atmospheric pressure.

[0032] The support members 45 support the first covering member 44a and the second covering member 44b at a predetermined distance from each other in the vertical direction. Multiple support members 45 are provided, for example, in the circumferential direction of the processing container 10. The support members 45 are formed of, for example, an insulating material.

[0033] The power supply line 46 electrically connects the RF power supply 48 to the first external electrode 42c and the second external electrode 43c.

[0034] The matching circuit 47 is installed in the middle of the power supply line 46. The matching circuit 47 is configured to match the impedance on the load (upper electrode 41a) side of the RF power supply 48 to the output impedance of the RF power supply 48.

[0035] The RF power supply 48 is configured to output RF power. The frequency of the RF power may be, for example, 13.56 MHz. The RF power output from the RF power supply 48 is supplied to the first power supply unit 42 and the second power supply unit 43 via the power supply line 46. The RF power supplied to the first power supply unit 42 is transmitted from the first external electrode 42c to the first internal electrode 42a by electric field coupling and supplied to the upper electrode 41a via the first connecting electrode 42b. The RF power supplied to the second power supply unit 43 is transmitted from the second external electrode 43c to the second internal electrode 43a by electric field coupling and supplied to the lower electrode 41b via the second connecting electrode 43b. As a result, plasma is generated from the processing gas between the upper electrode 41a and the lower electrode 41b.

[0036] (Moving mechanism) The moving mechanism 50 will be described with reference to Figures 6 and 7. Figure 6 shows the position of the moving mechanism 50 when loading or unloading the substrate W. Figure 7 shows the position of the moving mechanism 50 when performing plasma treatment on the substrate W.

[0037] As shown in Figures 6 and 7, the moving mechanism 50 includes a vertical moving mechanism 51 and a horizontal moving mechanism 52.

[0038] The vertical movement mechanism 51 is configured to move the parallel plate electrodes 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, the support member 45, and the horizontal movement mechanism 52 along the vertical direction relative to the processing container 10. The vertical movement mechanism 51 has a lid 51a. The lid 51a is configured to be movable along the vertical direction by a boat elevator (not shown). When the lid 51a moves upward, it airtightly closes the opening at the lower end of the processing container 10. When the lid 51a moves downward, it opens the opening at the lower end of the processing container 10.

[0039] The horizontal movement mechanism 52 is configured to move the parallel plate electrode 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, and the support member 45 along the horizontal direction relative to the lid 51a. The horizontal movement mechanism 52 has a fixed part 52a, a movable part 52b, and a bellows 52c. The fixed part 52a is fixed on the lid 51a. The fixed part 52a moves along the vertical direction integrally with the lid 51a. The movable part 52b is configured to be movable horizontally relative to the fixed part 52a. The movable part 52b is provided through an opening provided in the side wall of the lid 51a. Between the portion of the movable part 52b outside the lid 51a and the outer wall of the lid 51a, a bellows 52c is provided that separates the atmosphere inside the processing container 10 from the outside air and expands and contracts as the movable part 52b moves horizontally. The lower end of the support member 45 is fixed to the movable part 52b. As a result, the support member 45 moves horizontally as a single unit with the movable part 52b.

[0040] When loading or unloading the substrate W, as shown in Figure 6, the horizontal movement mechanism 52 moves the moving part 52b horizontally, thereby moving the first internal electrode 42a and the second internal electrode 43a to positions where they do not face the first external electrode 42c and the second external electrode 43c, respectively. When loading the substrate W, the vertical movement mechanism 51 raises the lid 51a relative to the processing container 10. As a result, the parallel plate electrode 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, the support member 45, and the horizontal movement mechanism 52 rise, and the opening at the lower end of the processing container 10 is airtightly closed by the lid 51a. When unloading the substrate W, the vertical movement mechanism 51 lowers the lid 51a relative to the processing container 10. As a result, the parallel plate electrodes 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, the support member 45, and the horizontal movement mechanism 52 descend, and the opening at the lower end of the processing container 10 is opened.

[0041] When performing plasma treatment on the substrate W, as shown in Figure 7, the horizontal movement mechanism 52 moves the moving part 52b horizontally, thereby moving the first internal electrode 42a and the second internal electrode 43a to positions facing the first external electrode 42c and the second external electrode 43c, respectively.

[0042] The above-described moving mechanism 50 is just one example, and the parallel plate electrodes 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, and the support member 45 may be moved horizontally and vertically by a moving mechanism having a different configuration.

[0043] As described above, the plasma processing apparatus 1A includes a plurality of parallel plate electrodes 41 arranged in multiple stages inside the processing container 10, and a first power supply unit 42 and a second power supply unit 43 that supply power to the plurality of parallel plate electrodes 41 from outside the processing container 10 in a non-contact manner. This simplifies the wiring inside the processing container 10.

[0044] (Plasma treatment method) Referring to Figures 6 and 7, the plasma processing method performed in the plasma processing apparatus 1A will be described.

[0045] First, as shown in Figure 6, with the substrate W placed on the lower electrode 41b, the lid 51a is raised from below the processing container 10. This causes the parallel plate electrode 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, the support member 45, and the horizontal movement mechanism 52 to rise, and the opening at the lower end of the processing container 10 is airtightly sealed by the lid 51a.

[0046] Next, as shown in Figure 7, the movable part 52b is moved horizontally to move the first internal electrode 42a and the second internal electrode 43a to positions facing the first external electrode 42c and the second external electrode 43c, respectively.

[0047] Next, power is transmitted from the first external electrode 42c and the second external electrode 43c to the first internal electrode 42a and the second internal electrode 43a, respectively, by electric field coupling to generate plasma inside the processing container 10, thereby exposing the substrate W placed on the lower electrode 41b to the plasma. As a result, the substrate W is subjected to plasma treatment.

[0048] After the substrate W has been subjected to plasma treatment, the movable part 52b is moved horizontally to move the first internal electrode 42a and the second internal electrode 43a to positions where they do not face the first external electrode 42c and the second external electrode 43c, respectively.

[0049] Next, the lid 51a is lowered relative to the processing container 10. As a result, the parallel plate electrodes 41, the first internal electrode 42a, the first connecting electrode 42b, the second internal electrode 43a, the second connecting electrode 43b, the covering member 44, the support member 45, and the horizontal movement mechanism 52 are lowered, and the opening at the lower end of the processing container 10 is opened.

[0050] With the above steps, the plasma treatment on the multiple substrates W is completed.

[0051] [Second Embodiment] Referring to Figure 8, the plasma processing apparatus 1B according to the second embodiment will be described. Figure 8 is a schematic diagram showing the plasma processing apparatus 1B according to the second embodiment. In Figure 8, the moving mechanism 50, the substrate W, etc. are omitted from the illustration.

[0052] As shown in Figure 8, the plasma processing apparatus 1B differs from the plasma processing apparatus 1A in that its plasma generation unit 40 has three feed lines 46a, 46b, and 46c, three matching units 47a, 47b, and 47c, and three RF power supplies 48a, 48b, and 48c. Other configurations may be the same as those of the plasma processing apparatus 1A. The following explanation will focus on the differences from the plasma processing apparatus 1A.

[0053] The feed line 46a electrically connects the RF power supply 48a to the uppermost first external electrode 42c and the uppermost second external electrode 43c. The matching unit 47a is installed in the middle of the feed line 46a. The RF power output from the RF power supply 48a is supplied via the feed line 46a to the uppermost first power supply unit 42 and the uppermost second power supply unit 43.

[0054] The feed line 46b electrically connects the RF power supply 48b to the first external electrode 42c and the second external electrode 43c, which are located in the second and third stages from the top. The matching unit 47b is installed in the middle of the feed line 46b. The RF power output from the RF power supply 48b is supplied via the feed line 46b to the first feed unit 42 and the second feed unit 43, which are located in the second and third stages from the top.

[0055] The feed line 46c electrically connects the RF power supply 48c to the first external electrode 42c and the second external electrode 43c located at the bottom. The matching unit 47c is located in the middle of the feed line 46c. The RF power output from the RF power supply 48c is supplied to the first power supply unit 42 and the second power supply unit 43 located at the bottom via the feed line 46a.

[0056] Plasma processing apparatus 1B, like plasma processing apparatus 1A, includes a plurality of parallel plate electrodes 41 arranged in multiple stages inside the processing container 10, and a first power supply unit 42 and a second power supply unit 43 that supply power to the plurality of parallel plate electrodes 41 from outside the processing container 10 in a non-contact manner. This simplifies the wiring inside the processing container 10.

[0057] The plasma processing apparatus 1B is equipped with three RF power supplies 48a, 48b, and 48c. RF power supply 48a supplies RF power between the uppermost parallel plate electrodes 41. RF power supply 48b supplies RF power between the second and third parallel plate electrodes 41 from the top. RF power supply 48c supplies RF power between the lowermost parallel plate electrodes 41. In this case, RF power of different outputs can be supplied between the uppermost parallel plate electrodes 41, between the second and third parallel plate electrodes 41 from the top, and between the lowermost parallel plate electrodes 41.

[0058] In the second embodiment, a case with three RF power supplies 48a, 48b, and 48c was described, but the number of RF power supplies is not limited to this. For example, an RF power supply may be provided for each parallel plate electrode 41.

[0059] [Third Embodiment] Referring to Figure 9, the plasma processing apparatus 1C according to the third embodiment will be described. Figure 9 is a schematic diagram showing the plasma processing apparatus 1C according to the third embodiment. In Figure 9, the gas supply unit 20, exhaust unit 30, power supply line 46, matching unit 47, RF power supply 48, moving mechanism 50, control unit 90, substrate W, etc. are not shown.

[0060] As shown in Figure 9, the plasma processing apparatus 1C differs from the plasma processing apparatus 1A in that, in a plan view from above, the first internal electrode 42a and the first external electrode 42c are positioned so as not to overlap with the second internal electrode 43a and the second external electrode 43c. Other configurations may be the same as those of the plasma processing apparatus 1A.

[0061] The plasma processing apparatus 1C, like the plasma processing apparatus 1A, includes a plurality of parallel plate electrodes 41 arranged in multiple stages inside the processing container 10, and a first power supply unit 42 and a second power supply unit 43 that supply power to the plurality of parallel plate electrodes 41 from outside the processing container 10 in a non-contact manner. This simplifies the wiring inside the processing container 10.

[0062] In the plasma processing apparatus 1C, in a plan view from above, the first internal electrode 42a and the first external electrode 42c are positioned so as not to overlap with the second internal electrode 43a and the second external electrode 43c. This makes it easier to prevent plasma generation in the first power supply unit 42 and the second power supply unit 43.

[0063] [Fourth Embodiment] Referring to Figure 10, the plasma processing apparatus 1D according to the fourth embodiment will be described. Figure 10 is a schematic diagram showing the plasma processing apparatus 1D according to the fourth embodiment. In Figure 10, the processing vessel 10, gas supply unit 20, exhaust unit 30, power supply line 46, matching unit 47, RF power supply 48, moving mechanism 50, control unit 90, substrate W, etc. are not shown.

[0064] As shown in Figure 10, the plasma processing apparatus 1D differs from the plasma processing apparatus 1A in that it has a power supply unit 142 that transmits power by electromagnetic induction, instead of the first power supply unit 42 and second power supply unit 43 that transmit power by electric field coupling. Other configurations may be the same as those of the plasma processing apparatus 1A. The following explanation will focus on the differences from the plasma processing apparatus 1A.

[0065] The power supply unit 142 supplies power to the multiple parallel plate electrodes 41 from outside the processing container 10 without contact. The power supply unit 142 is provided in a part of the periphery of the parallel plate electrodes 41. The power supply unit 142 has an internal coil 142a and an external coil 142b.

[0066] The internal coil 142a is provided inside the processing container 10. The internal coil 142a is provided on a part of the periphery of the parallel plate electrodes 41. The internal coil 142a has a central axis parallel to the arrangement direction of the parallel plate electrodes 41. One end of the internal coil 142a is electrically connected to the upper electrode 41a, and the other end is electrically connected to the lower electrode 41b. The internal coil 142a may be horizontally movable between a position facing the external coil 142b and a position not facing the external coil 142b. The position facing the external coil 142b may be a position in which at least a part of the internal coil 142a is housed inside the protruding portion 13b.

[0067] The external coil 142b is provided outside the processing container 10. The external coil 142b has a central axis parallel to the arrangement direction of the parallel plate electrodes 41. The external coil 142b is provided outside the processing container 10, facing the internal coil 142a. One end and the other end of the external coil 142b are electrically connected to the RF power supply 48 via the power supply line 46. The external coil 142b transmits power to the internal coil 142a by electromagnetic induction. The external coil 142b is attached, for example, to the lower surface of the protruding portion 13b in which the internal coil 142a is housed. The external coil 142b transmits power to the internal coil 142a via the wall surface of the protruding portion 13b.

[0068] The plasma processing apparatus 1D, like the plasma processing apparatus 1A, includes a plurality of parallel plate electrodes 41 arranged in multiple stages inside the processing container 10, and a power supply unit 142 that supplies power to the plurality of parallel plate electrodes 41 from outside the processing container 10 in a non-contact manner. This simplifies the wiring inside the processing container 10.

[0069] [Fifth Embodiment] Referring to Figure 11, the plasma processing apparatus 1E according to the fifth embodiment will be described. Figure 11 is a schematic diagram showing the plasma processing apparatus 1E according to the fifth embodiment. In Figure 11, the processing vessel 10, gas supply unit 20, exhaust unit 30, power supply line 46, matching unit 47, RF power supply 48, moving mechanism 50, control unit 90, substrate W, etc. are not shown.

[0070] As shown in Figure 11, the plasma processing apparatus 1E differs from the plasma processing apparatus 1A in that it has a power supply unit 242 that transmits power by electromagnetic induction, instead of the first power supply unit 42 and second power supply unit 43 that transmit power by electric field coupling. Other configurations may be the same as those of the plasma processing apparatus 1A. The following explanation will focus on the differences from the plasma processing apparatus 1A.

[0071] The power supply unit 242 supplies power to the multiple parallel plate electrodes 41 from outside the processing container 10 without contact. The power supply unit 242 is provided around the entire circumference of the parallel plate electrodes 41. The power supply unit 242 has an internal coil 242a and an external coil 242b.

[0072] The internal coil 242a is provided inside the processing container 10. One end of the internal coil 242a is electrically connected to the upper electrode 41a, and the other end is electrically connected to the lower electrode 41b. The internal coil 242a is provided around the upper electrode 41a and the lower electrode 41b, along the circumferential direction of the processing container 10. The internal coil 242a has a central axis parallel to the arrangement direction of the parallel plate electrodes 41.

[0073] The external coil 242b is located outside the processing container 10. The external coil 242b is located around the entire circumference of the processing container 10. The external coil 242b has a central axis parallel to the arrangement direction of the parallel plate electrodes 41. One end and the other end of the external coil 242b are electrically connected to the RF power supply 48 via the power supply line 46. The external coil 242b transmits power to the internal coil 242a by electromagnetic induction.

[0074] The plasma processing apparatus 1E, like the plasma processing apparatus 1A, includes a plurality of parallel plate electrodes 41 arranged in multiple stages inside the processing container 10, and a power supply unit 242 that supplies power to the plurality of parallel plate electrodes 41 from outside the processing container 10 in a non-contact manner. This simplifies the wiring inside the processing container 10.

[0075] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0076] 1A, 1B, 1C, 1D, 1E Plasma processing equipment 10 Processing containers 41 Parallel plate electrode 42. First Power Supply Unit 43 Second Power Supply Unit 142,242 Power supply section

Claims

1. Processing container and Multiple parallel plate electrodes arranged in multiple stages inside the processing container, A power supply unit that supplies power to the plurality of parallel plate electrodes from outside the processing container in a non-contact manner, Equipped with, Each of the plurality of parallel plate electrodes has an upper electrode and a lower electrode provided below the upper electrode and facing the upper electrode. The aforementioned power supply unit is A first internal electrode is provided inside the processing container and is electrically connected to the upper electrode, A first external electrode is provided outside the processing container and transmits power to the first internal electrode by electric field coupling, A second internal electrode is provided inside the processing container and is electrically connected to the lower electrode, A second external electrode is provided outside the processing container and transmits power to the second internal electrode by electric field coupling, It has, In a plan view from above, the first internal electrode is positioned so as not to overlap with the second internal electrode. Plasma processing equipment.

2. A first covering member that covers the upper electrode and the first internal electrode, A second covering member that covers the lower electrode and the second internal electrode, A third covering member connects the upper surface of the first covering member and the lower surface of the second covering member adjacent to the first covering member above it, forming a sealed internal space between the first covering member and the second covering member. It has, The pressure in the aforementioned internal space is higher than the pressure inside the processing container. The plasma processing apparatus according to claim 1.

3. The first internal electrode is movable between a position facing the first external electrode and a position not facing the first external electrode. The second internal electrode is movable between a position facing the second external electrode and a position not facing the second external electrode. The plasma processing apparatus according to claim 1.

4. The processing container has an overhang that extends outward from the side wall, The position in which the first internal electrode faces the first external electrode is the position in which the first internal electrode is housed inside the protruding portion. The position in which the second internal electrode faces the second external electrode is the position in which the second internal electrode is housed inside the protruding portion. The plasma processing apparatus according to claim 3.

5. A plasma processing apparatus comprising a processing container, a plurality of parallel plate electrodes arranged in multiple stages inside the processing container, and a power supply unit that supplies power to the plurality of parallel plate electrodes from outside the processing container without contact, wherein a plasma processing method is performed on a plurality of substrates at once inside the processing container, Each of the plurality of parallel plate electrodes has an upper electrode and a lower electrode provided below the upper electrode and facing the upper electrode. The aforementioned power supply unit is A first internal electrode is provided inside the processing container and is electrically connected to the upper electrode, A first external electrode is provided outside the processing container and transmits power to the first internal electrode by electric field coupling, A second internal electrode is provided inside the processing container and is electrically connected to the lower electrode, A second external electrode is provided outside the processing container and transmits power to the second internal electrode by electric field coupling, It has, The plurality of substrates are housed inside the processing container with the first internal electrode and the second internal electrode moved to positions where they do not face the first external electrode and the second external electrode, respectively. With the first internal electrode and the second internal electrode moved to positions facing the first external electrode and the second external electrode, respectively, power is transmitted from the first external electrode and the second external electrode to the first internal electrode and the second internal electrode, respectively, by electric field coupling to generate plasma inside the processing container, thereby exposing the plurality of substrates housed inside the processing container to the plasma. Having, Plasma treatment method.

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