Image sensor, method for manufacturing an image sensor, and electronic device including an image sensor

Abstract

To provide an image sensor including a color separation lens array, and an electronic device including the same.SOLUTION: An image sensor includes a color separation lens array. The image sensor includes: a sensor substrate including a first pixel for sensing first wavelength light, and a second pixel for sensing second wavelength light; a transparent spacer layer disposed over the sensor substrate; and a color separation lens array disposed over the spacer layer. The color separation lens array includes a first lens layer converging the first wavelength light that enters the color separation lens array to the first pixel and disposed over the spacer layer, a second lens layer disposed over the first lens layer, and an etching preventing layer formed on the entire surface between the first lens layer and the second lens layer.SELECTED DRAWING: Figure 4A

Description

[Technical Field]

[0001] The present invention relates to an image sensor comprising a color separation lens array capable of separating and focusing incident light according to wavelength, a method for manufacturing the image sensor, and an electronic device including the image sensor. [Background technology]

[0002] Image sensors generally use color filters to detect the color of incident light. However, these color filters absorb the light of the remaining colors after removing the light of the color being detected, thus reducing the light utilization efficiency. For example, when using an RGB color filter, only 1 / 3 of the incident light is transmitted, and the remaining 2 / 3 is absorbed, resulting in a light utilization efficiency of only about 33%. Therefore, in the case of color display devices and color image sensors, most of the light loss occurs in the color filter. In relation to this, the technologies described in the following patent documents 1 to 3 are known. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Korean Patent Publication No. 10-1772968 [Patent Document 2] Korean Published Patent Publication No. 10-2018-0131175 [Patent Document 3] Chinese Patent Application Publication No. 106483594 Specification [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] The problem that this invention aims to solve is to provide an image sensor with improved light utilization efficiency and color reproducibility by utilizing a color separation lens array that can separate and focus incident light according to wavelength, a method for manufacturing the image sensor, and an electronic device including the image sensor. [Means for solving the problem]

[0005] An image sensor according to one embodiment includes a sensor substrate having a first pixel for sensing a first wavelength of light and a second pixel for sensing a second wavelength of light; a transparent spacer layer disposed on the upper part of the sensor substrate; and a color separation lens array disposed on the upper part of the spacer layer, wherein the color separation lens array focuses the first wavelength of light incident on the color separation lens array onto the first pixel and also includes a first lens layer disposed on the upper part of the spacer layer, a second lens layer disposed on the upper part of the first lens layer, and an etching prevention layer formed over the entire surface between the first lens layer and the second lens layer.

[0006] A method for manufacturing an image sensor according to one embodiment also includes the steps of: forming a spacer layer on top of a sensor substrate including a first pixel for sensing a first wavelength of light and a second pixel for sensing a second wavelength of light; forming a first lens layer on top of the spacer layer; forming an etching prevention layer on top of the first lens layer; forming a dielectric layer on top of the etching prevention layer; forming an incised pattern on the dielectric layer; and filling the incised pattern with a high refractive index material to form a second lens layer.

[0007] An electronic device according to one embodiment includes a sensor substrate having a first pixel for sensing a first wavelength of light and a second pixel for sensing a second wavelength of light; a transparent spacer layer disposed on top of the sensor substrate; and a color separation lens array disposed on top of the spacer layer, wherein the color separation lens array focuses the first wavelength of light incident on the color separation lens array onto the first pixel and also includes a first lens layer disposed on top of the spacer layer, a second lens layer disposed on top of the first lens layer, and an etching prevention layer formed over the entire surface between the first lens layer and the second lens layer. [Brief explanation of the drawing]

[0008] [Figure 1] This is a block diagram of an image sensor according to one embodiment. [Figure 2A] This diagram illustrates various pixel arrangements for an image sensor's pixel array. [Figure 2B] It is a figure exemplarily showing various pixel arrays of a pixel array of an image sensor. [Figure 2C] It is a figure exemplarily showing various pixel arrays of a pixel array of an image sensor. [Figure 3A] It is a conceptual diagram showing a schematic structure and operation of a color separation lens array according to an embodiment. [Figure 3B] It is a conceptual diagram showing a schematic structure and operation of a color separation lens array according to an embodiment. [Figure 4A] It is a schematic cross-sectional view shown in different cross-sections of a pixel array of an image sensor according to an embodiment. [Figure 4B] It is a schematic cross-sectional view shown in different cross-sections of a pixel array of an image sensor according to an embodiment. [Figure 5A] It is a plan view schematically showing an array of pixels in a pixel array. [Figure 5B] It is a plan view exemplarily showing a form in which a plurality of nanoposts are arranged in a plurality of regions of a color separation lens array. [Figure 5C] It is a plan view showing a detailed enlarged view of a part of FIG. 5B. [Figure 5D] It is a plan view exemplarily showing a form in which nanoposts are arranged in a second lens layer. [Figure 6A] It is a figure showing a phase distribution of green light and blue light that have passed through a color separation lens array along the line I-I' in FIG. 5B. [Figure 6B] It is a figure showing a phase at the center of a pixel corresponding region of green light that has passed through a color separation lens array. [Figure 6C] It is a drawing showing a phase at the center of a pixel corresponding region of blue light that has passed through a color separation lens array. [Figure 6D] It is a figure exemplarily showing a traveling direction of green light incident on a first green light condensing region. [Figure 6E] It is a drawing exemplarily showing an array of a first green light condensing region. [Figure 6F]This diagram illustrates the direction of propagation of blue light incident on a blue light focusing region. [Figure 6G] This diagram illustrates an array of blue light focusing regions. [Figure 7A] This figure shows the phase distribution of green and red light passing through the color separation lens array, along the line II-II' in Figure 5B. [Figure 7B] This figure shows the phase at the center of the pixel-corresponding region of red light that has passed through a color separation lens array. [Figure 7C] This diagram shows the phase at the center of the pixel-corresponding region of green light that has passed through a color separation lens array. [Figure 7D] This diagram illustrates the direction of propagation of red light incident on a red light focusing region. [Figure 7E] This diagram illustrates an array of red light focusing regions. [Figure 7F] This figure exemplifies the direction of propagation of green light incident on the second green light focusing region. [Figure 7G] This diagram illustrates an array of the second green light focusing region. [Figure 8A] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8B] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8C] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8D] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8E] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8F] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8G] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 8H] This is a diagram illustrating the manufacturing method of the pixel array shown in Figure 4A. [Figure 9A]This diagram shows the change in the spectrum of light incident on the sensor substrate when the thickness of the etching prevention layer changes. [Figure 9B] This diagram shows the change in the spectrum of light incident on the sensor substrate when the thickness of the etching prevention layer changes. [Figure 10A] This is a cross-sectional view of a pixel array that further includes an anti-reflective layer on top of the color separation lens array. [Figure 10B] This is a cross-sectional view of a pixel array that further includes an anti-reflective layer on top of the color separation lens array. [Figure 11A] This diagram illustrates the spectral changes of light incident on the sensor substrate due to the anti-reflective layer. [Figure 11B] This diagram illustrates the spectral changes of light incident on the sensor substrate due to the anti-reflective layer. [Figure 12] This is a block diagram schematically illustrating an electronic device including an image sensor according to one embodiment. [Figure 13] Figure 12 is a block diagram illustrating the camera module in a schematic manner. [Figure 14] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 15] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 16] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 17] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 18] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 19] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 20] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 21]This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 22] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Figure 23] This figure shows various examples of electronic devices to which an image sensor according to one embodiment is applied. [Modes for carrying out the invention]

[0009] The following description will detail an image sensor equipped with a color separation lens array and an electronic device including the same, with reference to the attached drawings. The embodiments described are merely illustrative, and various modifications are possible from such embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings is exaggerated for clarity and convenience of explanation.

[0010] In the following, the terms "top" or "above" may include not only those immediately above, below, left, and right upon contact, but also those above, below, left, and right without direct contact.

[0011] Terms like those in the first and second categories may be used to describe a variety of components, but are used solely for the purpose of distinguishing one component from others. Such terms do not imply that the components are different in material or structure.

[0012] A singular expression includes multiple expressions unless the context clearly indicates otherwise. Furthermore, when a part "includes" a component, it does not exclude other components, but rather may include other components, unless otherwise specified.

[0013] Furthermore, terms such as "...part" and "module" as used in the specification refer to a unit that processes one or more functions or operations, which may be embodied by hardware or software, or by a combination of hardware and software. The use of the term "the foregoing," and similar demonstrative terms, can be singular or plural.

[0014] The steps constituting the method may also be performed in any order unless explicitly stated otherwise. Furthermore, the use of all illustrative terms (e.g., etc.) is solely for the purpose of detailing the technical idea and does not limit the scope of rights unless otherwise specified in the claims.

[0015] Figure 1 is a schematic block diagram of an image sensor according to one embodiment. Referring to Figure 1, the image sensor 1000 may include a pixel array 1100, a timing controller 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may also be a CCD (charge coupled device) image sensor or a CMOS (complementary metal oxide semiconductor) image sensor.

[0016] The pixel array 1100 includes pixels arranged in a two-dimensional array along multiple rows and columns. The row decoder 1020 selects one row of the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a light-sensing signal from multiple pixels arranged along the selected row, on a column-by-column basis. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include multiple analog-to-digital converters (ADCs) arranged column by column between the column decoder and the pixel array 1100, or one analog-to-digital converter (ADC) arranged at the output terminal of the column decoder. The timing controller 1010, row decoder 1020, and output circuit 1030 can be implemented on a single chip or on separate chips. A processor for processing the video signal output via the output circuit 1030 is also implemented as a single chip together with the timing controller 1010, the raw decoder 1020, and the output circuit 1030.

[0017] The pixel array 1100 may include multiple pixels that sense light of different wavelengths. The arrangement of these pixels can also be realized in various ways. For example, Figures 2A to 2C illustrate various pixel arrangements of the pixel array 1100 of the image sensor 1000.

[0018] First, Figure 2A shows a Bayer pattern commonly adopted in the image sensor 1000. Referring to Figure 2A, one unit pattern contains four quadrant regions, with the first to fourth quadrant planes being blue pixels B, green pixels G, red pixels R, and green pixels G, respectively. Such unit patterns are repeatedly arranged two-dimensionally along the first direction (X direction) and the second direction (Y direction). In other words, within a 2x2 array-like unit pattern, two green pixels G are arranged in one diagonal direction, and one blue pixel B and one red pixel R are arranged in the other diagonal direction. Looking at the overall pixel arrangement, the first row consists of multiple green pixels G and multiple blue pixels B arranged alternately along the first direction; and the second row consists of multiple red pixels R and multiple green pixels G arranged alternately along the first direction; these are repeatedly arranged along the second direction.

[0019] The pixel array 1100 can be arranged in various ways other than the Bayer pattern. For example, referring to Figure 2B, a CYGM arrangement is possible, in which magenta pixels M, cyan pixels C, yellow pixels Y, and green pixels G constitute one unit pattern. Also, referring to Figure 2C, an RGBW arrangement is possible, in which green pixels G, red pixels R, blue pixels B, and white pixels W constitute one unit pattern. In addition, although not shown, the unit pattern can also have a 3x2 array configuration. Furthermore, the pixels of the pixel array 1100 can be arranged in various ways depending on the color characteristics of the image sensor 1000. In the following explanation, the pixel array 1100 of the image sensor 1000 has a Bayer pattern as an example, but the operating principle is applicable not only to the Bayer pattern but also to other forms of pixel arrangement.

[0020] The pixel array 1100 of the image sensor 1000 may include a color separation lens array that focuses light of a specific color corresponding to a particular pixel. Figures 3A and 3B are conceptual diagrams showing the structure and operation of the color separation lens array.

[0021] Referring to FIG. 3A, the color separation lens array CSLA (color separating lens array) may include a plurality of nanoposts NP that change the phase of the incident light Li differently depending on the incident position. The color separation lens array CSLA is also partitioned in various ways. For example, the first wavelength light L contained in the incident light Li λ1 The first pixel corresponding region R1 corresponding to the first pixel PX1 where is condensed, and the second wavelength light L contained in the incident light Li λ2 It is also partitioned into a second pixel corresponding region R2 corresponding to the second pixel PX2 where is condensed. The first pixel corresponding region R1 and the second pixel corresponding region R2 may each include one or more nanoposts NP, and are also arranged so as to face the first pixel PX1 and the second pixel PX2, respectively. As another example, the color separation lens array CSLA includes the first wavelength light L λ1 A first wavelength condensing region L1 that condenses to the first pixel PX1, and the second wavelength light L λ2 It is also partitioned into a second wavelength condensing region L2 that condenses to the second pixel PX2. A part of the first wavelength condensing region L1 and the second wavelength condensing region L2 may overlap. The color separation lens array CSLA forms different phase profiles for the first wavelength light L and the second wavelength light L contained in the incident light Li λ1 And the second wavelength light L λ2 respectively, and can condense the first wavelength light L λ1 to the first pixel PX1 and condense the second wavelength light L λ2 to the second pixel PX2.

[0022] For example, referring to FIG. 3B, the color separation lens array CSLA has the first wavelength light L at the position immediately after passing through the color separation lens array CSLA, that is, at the lower surface position of the color separation lens array CSLA λ1 has the first phase distribution PP1, and the second wavelength light L λ2 has the second phase distribution PP2, so that the first wavelength light L λ1 and the second wavelength light L λ2 are condensed to the corresponding first pixel PX1 and second pixel PX2, respectively. Specifically, the first wavelength light L that has passed through the color separation lens array CSLA λ1The first phase distribution PP1 can have a phase distribution that is largest at the center of the first pixel-corresponding region R1 and decreases in the direction away from the center of the first pixel-corresponding region R1, i.e., in the direction of the second pixel-corresponding region R2. Such a phase distribution is similar to the phase distribution of light that passes through a convex lens, for example, a microlens with a convex center located in the first wavelength focusing region L1 and converges to a single point, and the first wavelength light L λ1 This light can be focused onto the first pixel PX1. Also, the second wavelength light L that has passed through the color separation lens array CSLA λ2 It has a second phase distribution PP2 which is largest at the center of the second pixel corresponding region R2 and decreases in the direction away from the center of the second pixel corresponding region R2, i.e., in the direction of the first pixel corresponding region R1, and the second wavelength light L λ2 This light can be focused onto the second pixel, PX2.

[0023] As shown in Figure 3B, the refractive index of a material differs depending on the wavelength of the light it reacts to, so the color separation lens array CSLA reacts to the first wavelength light L λ1 and second wavelength light L λ2 Therefore, different phase distributions can be provided. In other words, even with the same material, the refractive index differs depending on the wavelength of light that reacts with the material, and the phase delay that light experiences when passing through the material also differs for each wavelength, so different phase distributions can be formed for each wavelength. For example, the first wavelength light L in the first pixel corresponding region R1 λ1 The refractive index related to and the second wavelength light L of the first pixel corresponding region R1 λ2 The refractive indices related to these are different from each other, and the first wavelength light L that has passed through the first pixel corresponding region R1 λ1 The phase delay that occurs and the second wavelength light L that has passed through the first pixel corresponding region R1 λ2 Since the phase delay that occurs can differ, if the color separation lens array (CSLA) is designed taking such optical characteristics into consideration, the first wavelength light L λ1 and second wavelength light L λ2 Therefore, they will provide phase distributions that are different from each other.

[0024] The color separation lens array CSLA uses first wavelength light L λ1 and second wavelength light L λ2The nanoposts NPs may include nanoposts arranged according to a specific rule such that they each have a first phase distribution PP1 and a second phase distribution PP2. Here, the rule applies to parameters such as the shape, size (width, height), spacing, and arrangement of the nanoposts NPs, which can also be determined by the phase distributions embodied through the color separation lens array CSLA.

[0025] The rules governing the placement of nanopost NPs in the first pixel-corresponding region R1 and the rules governing their placement in the second pixel-corresponding region R2 may differ from those governing the second pixel-corresponding region R2. In other words, the size, shape, spacing, and / or arrangement of nanopost NPs in the first pixel-corresponding region R1 may differ from the size, shape, spacing, and / or arrangement of nanopost NPs in the second pixel-corresponding region R2.

[0026] Nanopost NPs can also have a cross-sectional diameter that is a sub-wavelength, where the sub-wavelength is smaller than the wavelength band of the light being branched. For example, a nanopost NP can have a dimension smaller than the shorter of the first and second wavelengths. When the incident light Li is visible light, the cross-sectional diameter of the nanopost NP can be smaller than, for example, 400 nm, 300 nm, or 200 nm. On the other hand, the height of the nanopost NP can be 500 nm to 1,500 nm, and the height can be greater than the cross-sectional diameter. Although not shown, a nanopost NP can also be a combination of two or more posts stacked in the height direction (Z direction).

[0027] Nanopost NPs can also be made of materials having a higher refractive index than the surrounding material. For example, nanopost NPs may include c-Si, p-Si, a-Si, and III-V compound semiconductors (such as GaP, GaN, and GaAs), SiC, TiO2, SiN, and / or combinations thereof. Nanopost NPs having a refractive index difference from the surrounding material can alter the phase of light passing through them. This is due to a phase delay caused by the sub-wavelength shape and dimensions of the nanopost NPs, and the degree of phase delay is determined by the detailed shape and dimensions, arrangement, etc., of the nanopost NPs. The surrounding material of the nanopost NPs can also be made of dielectric materials having a lower refractive index than the nanopost NPs. For example, the surrounding material may include SiO2 or air.

[0028] The first wavelength λ1 and the second wavelength λ2 are in the infrared and visible light wavelength bands, but are not limited to these. Depending on the arrangement rules of the array of multiple nanopost NPs, it can operate at a variety of wavelengths. Furthermore, while the example shows two wavelengths being split and focused, the incident light can also be split and focused in three or more directions depending on the wavelength.

[0029] Furthermore, while the example given was a single-layer chromatic separation lens array (CSLA), CSLAs can also have a multi-layered structure. For example, the first layer can be designed to focus visible light onto specific pixels, and the second layer can be designed to focus infrared light onto other pixels.

[0030] The following section provides a more detailed explanation of an example in which the aforementioned color separation lens array (CSLA) is applied to the pixel array 1100 of the image sensor 1000.

[0031] Figures 4A and 4B are schematic diagrams showing an example of a pixel array in different cross-sections; Figure 5A is a schematic plan view showing the arrangement of light-sensing cells in the pixel array; Figure 5B is a plan view illustrating a configuration in which nanoposts are arranged on the first lens layer 130a; Figure 5C is a plan view showing a part of Figure 5B in detail and magnified; and Figure 5D is a plan view illustrating a configuration in which nanoposts are arranged on the second lens layer 130b.

[0032] Referring to Figures 4A and 4B, the pixel array 1100 of the image sensor 1000 includes a sensor substrate 110 containing a plurality of light-sensing pixels 111, 112, 113, and 114, a transparent spacer layer 120 disposed on the sensor substrate 110, and a color separation lens array 130 disposed on the spacer layer 120.

[0033] The sensor substrate 110 may include a first green pixel 111, a blue pixel 112, a red pixel 113, and a second green pixel 114 that convert light into electrical signals. The first green pixels 111 and the blue pixels 112 may be arranged alternately along a first direction (X direction), and in cross-sections with different positions in the Y direction, the red pixels 113 and the second green pixels 114 may be arranged alternately, as shown in Figure 4B. Figure 5A shows the arrangement of light-sensing cells when the pixel array 1100 of the image sensor 1000 has a Bayer pattern arrangement, as shown in Figure 2A. Such an arrangement is for sensing incident light by dividing it into unit patterns such as a Bayer pattern. For example, the first green pixels 111 and the second green pixels 114 can sense green light, the blue pixel 112 can sense blue light, and the red pixel 113 can sense red light. Although not shown, separation films for cell separation may be further formed at the boundaries between cells.

[0034] The spacer layer 120 is positioned between the sensor substrate 110 and the color separation lens array 130, and plays a role in maintaining a constant distance between the sensor substrate 110 and the color separation lens array 130. The spacer layer 120 can also be made of a dielectric material that is transparent to visible light, such as SiO2 or siloxane-based spin-on glass (SOG), which has a lower refractive index than nanopost NPs and low absorption in the visible light band. The thickness h of the spacer layer 120 is selected from within the range ht-p≦h≦ht+p. Here, the theoretical thickness ht of the spacer layer 120 can also be expressed by the following equation 1, where n is the refractive index of the spacer layer 120 with respect to the wavelength λ0 and p is the pixel pitch.

[0035]

number

[0036] The theoretical thickness ht of the spacer layer 120 can represent the focal length at which light with wavelength λ0 is focused onto the upper surfaces of pixels 111, 112, 113, and 114 by the color separation lens array 130. λ0 is also the reference wavelength for determining the thickness h of the spacer layer 120, and the thickness of the spacer layer 120 can be designed based on 540 nm, which is the central wavelength of green light.

[0037] The color separation lens array 130 is supported by a spacer layer 120 and may include a plurality of lens layers 130a, 130b on which nanoposts NP are formed. Between the nanoposts NP, a dielectric with a lower refractive index than the material forming the nanoposts NP, such as air or SiO2, may be included. The first lens layer 130A of the color separation lens array 130 may include nanoposts NPa, which are a high refractive index material, and a first dielectric layer DL1, which is a low refractive index material, filling the spaces between the nanoposts NPa. The second lens layer 130b of the color separation lens array 130 may include nanoposts NPb, which are a high refractive index material, and a second dielectric layer DL2, which is a low refractive index material, filling the spaces between the nanoposts NPb.

[0038] Referring to Figures 5B and 5D, the color separation lens array 130 is also partitioned into four pixel-corresponding regions 131, 132, 133, and 134, which correspond to each of the pixels 111, 112, 113, and 114 in Figure 5A. The first green pixel-corresponding region 131 corresponds to the first green pixel 111 and is located above the first green pixel 111; the blue pixel-corresponding region 132 corresponds to the blue pixel 112 and is located above the blue pixel 112; the red pixel-corresponding region 133 corresponds to the red pixel 113 and is located above the red pixel 113; and the second green pixel-corresponding region 134 corresponds to the second green pixel 114 and is located above the second green pixel 114. In other words, the pixel-corresponding regions 131, 132, 133, and 134 of the color separation lens array 130 are also positioned to face each of the pixels 111, 112, 113, and 114 of the sensor substrate 110. The pixel-corresponding regions 131, 132, 133, and 134 can be arranged in a two-dimensional manner along a first direction (X direction) and a second direction (Y direction) such that a first row in which the first green pixel-corresponding region 131 and the blue pixel-corresponding region 132 are arranged alternately, and a second row in which the red pixel-corresponding region 133 and the second green pixel-corresponding region 134 are arranged alternately, are repeated with respect to each other. The color separation lens array 130 also includes a plurality of unit patterns arranged in a two-dimensional manner, similar to the pixel array of the sensor substrate 110, and each unit pattern includes pixel-corresponding regions 131, 132, 133, and 134 arranged in a 2x2 configuration.

[0039] The color separation lens array 130 may include nanopost NPs of a defined size, shape, spacing, and / or arrangement such that green light is branched and focused to the first green pixel 111 and the second green pixel 114, blue light is branched and focused to the blue pixel 112, and red light is branched and focused to the red pixel 113. The thickness of the color separation lens array 130 along the third direction (Z direction) is similar to the height of the nanopost NPs and is between 500 nm and 1,500 nm.

[0040] Referring to Figure 5B, the first lens layer 130A may include cylindrical nanoposts NPa having a circular cross-section in the pixel-corresponding regions 131, 132, 133, and 134. Nanoposts NPa with different cross-sectional areas may be placed at the center of each region, at the center of the inter-pixel boundary line, or at the intersection of the pixel boundary lines.

[0041] Figure 5C shows in detail the arrangement of nanoposts NPa contained in a portion of Figure 5B, i.e., the pixel-corresponding regions 131, 132, 133, and 134 that constitute the unit pattern. In Figure 5C, the nanoposts NPa are labeled "p1~p9" according to their detailed position. Referring to Figure 5C, the cross-sectional areas of nanopost p1 located in the center of the first green pixel-corresponding region 131 and nanopost p4 located in the center of the second green pixel-corresponding region 134 are larger than the cross-sectional areas of nanopost p2 located in the center of the blue pixel-corresponding region 132 and nanopost p3 located in the center of the red pixel-corresponding region 133. The cross-sectional area of ​​nanopost p2 located in the center of the blue pixel-corresponding region 132 is larger than the cross-sectional area of ​​nanopost p3 located in the center of the red pixel-corresponding region 133. However, this is only one example, and nanoposts NPa of various shapes, sizes, and arrangements can be applied as needed.

[0042] The nanoposts NPa present in the first green pixel region 131 and the second green pixel region 134 may have different distribution rules along the first direction (X direction) and the second direction (Y direction). For example, the nanoposts NPa arranged in the first green pixel region 131 and the second green pixel region 134 may have different size arrangements along the first direction (X direction) and the second direction (Y direction). As illustrated in Figure 5C, among the nanoposts NPa, the cross-sectional area of ​​nanopost p5 located at the boundary between the first green pixel region 131 and the adjacent blue pixel region 132 in the first direction (X direction) and the cross-sectional area of ​​nanopost p6 located at the boundary with the adjacent red pixel region 133 in the second direction (Y direction) are different from each other. Similarly, the cross-sectional area of ​​nanopost p7 located at the boundary between the second green pixel corresponding region 134 and the adjacent red pixel corresponding region 133 in the first direction (X direction) is different from the cross-sectional area of ​​nanopost p8 located at the boundary with the adjacent blue pixel corresponding region 132 in the second direction (Y direction). Furthermore, the nanoposts NPa placed in the blue pixel-corresponding region 132 and the red pixel-corresponding region 133 can have a symmetrical distribution rule along the first direction (X direction) and the second direction (Y direction). As illustrated in Figure 5C, among the nanoposts NPa, the cross-sectional areas of nanopost p5 placed at the boundary between the blue pixel-corresponding region 132 and the adjacent pixel-corresponding region in the first direction (X direction) and nanopost p8 placed at the boundary with the adjacent pixel-corresponding region in the second direction (Y direction) are the same. Similarly, in the red pixel-corresponding region 133, the cross-sectional areas of nanopost p7 placed at the boundary with the adjacent pixel-corresponding region in the first direction (X direction) and nanopost p6 placed at the boundary with the adjacent pixel in the second direction (Y direction) are the same.

[0043] On the other hand, the nanoposts p9 located at the corners of pixel-corresponding regions 131, 132, 133, and 134, that is, at the intersections of the four regions, have the same cross-sectional area.

[0044] Such distributions are due to the pixel arrangement of the Bayer pattern. Blue pixels 112 and red pixels 113 are identical in that their adjacent pixels in the first direction (X direction) and second direction (Y direction) are green pixels 111 and 114, respectively. However, the first green pixel 111 is different in that its adjacent pixel in the first direction (X direction) is blue pixel 112, and its adjacent pixel in the second direction (Y direction) is red pixel 113. Similarly, the second green pixel 114 is different in that its adjacent pixel in the first direction (X direction) is red pixel 113, and its adjacent pixel in the second direction (Y direction) is blue pixel 112. Furthermore, the first green pixel 111 and the second green pixel 114 have four diagonally adjacent pixels that are green pixels, the blue pixel 112 has four diagonally adjacent pixels that are red pixels 113, and they are the same as each other, and the red pixel 113 has four diagonally adjacent pixels that are blue pixels 112, and they are the same as each other. Therefore, in the blue pixel corresponding region 132 and the red pixel corresponding region 133 corresponding to the blue pixel 112 and the red pixel 113, nanopost NPa can be arranged in a 4-fold symmetry manner, and in the first green pixel corresponding region 131 and the second green pixel corresponding region 134, nanopost NPa can be arranged in a 2-fold symmetry manner. In particular, the first green pixel corresponding region 131 and the second green pixel corresponding region 134 are rotated 90° relative to each other.

[0045] Although the nanoposts NPa in Figures 5B and 5C are illustrated as having symmetrical circular cross-sectional shapes, some nanoposts with asymmetrical cross-sectional shapes are also included. For example, in the first green pixel corresponding region 131 and the second green pixel corresponding region 134, nanoposts with asymmetrical cross-sectional shapes in which the widths in the first direction (X direction) and the second direction (Y direction) are different from each other may be used, while in the blue pixel corresponding region 132 and the red pixel corresponding region 133, nanoposts with symmetrical cross-sectional shapes in which the widths in the first direction (X direction) and the second direction (Y direction) are the same may be used.

[0046] Figure 5D is a plan view of the second lens layer 130b. The shape and arrangement of the nanoposts NPb contained in the second lens layer 130b are similar to those of the first lens layer 130a described above, the difference being that the second lens layer 130b may contain nanoposts NPb that are shifted towards the center C of the color separation lens array 130 compared to the nanoposts NPa of the first lens layer 130a. For example, referring to Figure 4A, the nanoposts NPbR arranged on the right side of the second lens layer 130b are shifted by dR towards the center C of the color separation lens array 130 compared to the nanoposts NPaR of the corresponding first lens layer 130a, and the nanoposts NPbL arranged on the left side of the second lens layer 130b are shifted by dL towards the center C of the color separation lens array 130 compared to the nanoposts NPaL of the corresponding first lens layer 130a. The reason the second lens layer 130b contains shifted nanoposts NPbR and NPbL is that the angle of the incident chief ray differs depending on the position in the color separation lens array 130, and the amount of shift can be proportional to the distance from the center C of the color separation lens array 130. In other words, the further away from the center C of the color separation lens array 130, the greater the amount of shift of the nanoposts NPb.

[0047] The second lens layer 130b in Figure 5D is explained using the example of a case where it contains the same number of nanoposts NPb as the nanoposts NPa formed on the first lens layer 130a. However, the second lens layer 130b may contain fewer or more nanoposts NPb than the nanoposts NPa formed on the first lens layer 130a. For example, nanoposts NPa are formed at the boundary between the green pixel-corresponding region 131 and the red pixel-corresponding region 133 of the first lens layer 130a, but nanoposts NPb are not formed on the second lens layer 130b at the corresponding location.

[0048] Referring again to Figures 4A and 4B, a first etching prevention layer 140a and a second etching prevention layer 140b may be placed beneath the first lens layer 130a and the second lens layer 130b, respectively. The first etching prevention layer 140a is also placed between the spacer layer 120 and the first lens layer 130a to prevent damage to the spacer layer 120 during the first lens layer 130a formation process, and the second etching prevention layer 140b is also placed between the first lens layer 130a and the second lens layer 130b to prevent damage to the first lens layer 130a during the second lens layer 130b formation process. The first etching prevention layer 140a and the second etching prevention layer 140b are also HfO2 films and are formed over the entire area of ​​the color separation lens array 130. The first etching prevention layer 140a and the second etching prevention layer 140b have a thickness that allows them to perform the lower layer protection function without interfering with the optical properties of the color separation lens array 130, and the thickness of the first etching prevention layer 140a and the second etching prevention layer 140b can be, for example, 3 nm to 30 nm or 5 nm to 15 nm.

[0049] Figure 6A shows the phase distribution of green and blue light that has passed through the color separation lens array 130 along the I-I' line in Figure 5B, Figure 6B shows the phase of green light that has passed through the color separation lens array 130 at the center of the pixel-corresponding regions 131, 132, 133, and 134, and Figure 6C shows the phase of blue light that has passed through the color separation lens array 130 at the center of the pixel-corresponding regions 131, 132, 133, and 134. The phase distribution of green and blue light in Figure 6A is similar to the phase distribution of first-wavelength and second-wavelength light explained exemplified in Figure 3B.

[0050] Referring to Figures 6A and 6B, the green light that has passed through the color separation lens array 130 can have a first phase distribution PP1 that is largest at the center of the first green pixel corresponding region 131 and decreases as it moves away from the center of the first green pixel corresponding region 131. Specifically, at the position immediately after passing through the color separation lens array 130, in other words, at the lower surface of the color separation lens array 130 or the upper surface of the spacer layer 120, the phase of the green light is largest at the center of the first green pixel corresponding region 131 and gradually decreases concentrically as it moves away from the center of the first green pixel corresponding region 131. In the X and Y directions, it is smallest at the centers of the blue pixel corresponding region 132 and the red pixel corresponding region 133, and in the diagonal direction, it is smallest at the point of contact between the first green pixel corresponding region 131 and the second green pixel corresponding region 134. If we define the phase of light emitted from the center of the first green pixel-corresponding region 131 as 2π, then at the centers of the blue pixel-corresponding region 132 and the red pixel-corresponding region 133, the phase is 0.9π to 1.1π; at the center of the second green pixel-corresponding region 134, the phase is 2π; and at the point of contact between the first green pixel-corresponding region 131 and the second green pixel-corresponding region 134, light with a phase of 1.1π to 1.5π may be emitted. On the other hand, the first phase distribution PP1 of green light does not mean that the phase delay of light passing through the center of the first green pixel-corresponding region 131 is the largest. Rather, if the phase of light passing through the first green pixel-corresponding region 131 is defined as 2π, and the phase delay of light passing through other positions is even larger and has a phase value greater than 2π, then the PP1 also represents the value remaining after removing about 2nπ, i.e., the wrapped phase distribution. For example, if the phase of light passing through the first green pixel corresponding region 131 is 2π, and the phase of light passing through the center of the blue pixel corresponding region 132 is 3π, then the phase in the blue pixel corresponding region 132 is also the π remaining after removing 2π (when n=1) from 3π.

[0051] Referring to Figures 6A and 6C, the blue light that has passed through the color separation lens array 130 can have a second phase distribution PP2 which is largest at the center of the blue pixel corresponding region 132 and decreases as it moves away from the center of the blue pixel corresponding region 132. Specifically, at the position immediately after passing through the color separation lens array 130, the phase of the blue light is largest at the center of the blue pixel corresponding region 132, and gradually decreases concentrically as it moves away from the center of the blue pixel corresponding region 132. In the X and Y directions, it is smallest at the centers of the first green pixel corresponding region 131 and the second green pixel corresponding region 134, and in the diagonal direction, it is smallest at the center of the red pixel corresponding region 133. If the phase at the center of the blue pixel-corresponding region 132 for blue light is 2π, then the phases at the centers of the first green pixel-corresponding region 131 and the second green pixel-corresponding region 134 are, for example, 0.9π to 1.1π, and the phase at the center of the red pixel-corresponding region 133 is a smaller value than the phases at the centers of the first green pixel-corresponding region 131 and the second green pixel-corresponding region 134, for example, 0.5π to 0.9π.

[0052] Figure 6D illustrates the direction of propagation of green light incident on the first green light focusing region, and Figure 6E illustrates the array of the first green light focusing region.

[0053] Green light incident around the first green pixel corresponding region 131 is focused onto the first green pixel 111 by the color separation lens array 130, as shown in Figure 6D. In addition to the first green pixel corresponding region 131, green light from the blue pixel corresponding region 132 and the red pixel corresponding region 133 also enters the first green pixel 111. That is, the phase distribution of green light described in Figures 6A and 6B focuses the green light that has passed through the first green light focusing region GL1, which connects the centers of the two adjacent blue pixel corresponding regions 132 and the two red pixel corresponding regions 133 that are adjacent to the first green pixel corresponding region 131 with one side touching it, onto the first green pixel 111. Therefore, as shown in Figure 6E, the color separation lens array 130 can operate as a first green light focusing region GL1 array that focuses green light onto the first green pixel 111. The first green light focusing region GL1 has a larger area than the corresponding first green pixel 111, for example, 1.2 to 2 times larger.

[0054] Figure 6F illustrates the direction of propagation of blue light incident on a blue light focusing region, and Figure 6G illustrates an array of blue light focusing regions.

[0055] Blue light is focused onto the blue pixel 112 by the color separation lens array 130, as shown in Figure 6F, and blue light from pixel-corresponding regions 131, 132, 133, and 134 is incident on the blue pixel 112. The blue light phase distribution described earlier in Figures 6A and 6C focuses the blue light that has passed through the blue light focusing region BL, which is created by connecting the centers of four adjacent red pixel-corresponding regions 133 with their vertices touching the blue pixel-corresponding region 132, onto the blue pixel 112. Therefore, as illustrated in Figure 6G, the color separation lens array 130 can operate as a blue light focusing region BL array that focuses blue light onto the blue pixel. The area of ​​the blue light focusing region BL is larger than the corresponding blue pixel 112, for example, 1.5 to 4 times larger. The blue light focusing region BL is partially superimposed on the first green light focusing region GL1, the red light focusing region RL, and the second green light focusing region GL2 (Figure 7F), which will be described later.

[0056] Figure 7A shows the phase distribution of green and red light that has passed through the color separation lens array 130 along the line II-II' in Figure 5B, Figure 7B shows the phase of red light that has passed through the color separation lens array 130 at the center of the pixel-corresponding regions 131, 132, 133, and 134, and Figure 7C shows the phase of green light that has passed through the color separation lens array 130 at the center of the pixel-corresponding regions 131, 132, 133, and 134.

[0057] Referring to Figures 7A and 7B, the red light that has passed through the color separation lens array 130 can have a third phase distribution PP3 that is largest at the center of the red pixel corresponding region 133 and decreases as it moves away from the center of the red pixel corresponding region 133. Specifically, at the position immediately after passing through the color separation lens array 130, the phase of the red light is largest at the center of the red pixel corresponding region 133, and gradually decreases concentrically as it moves away from the center of the red pixel corresponding region 133. In the X and Y directions, it is smallest at the centers of the first green pixel corresponding region 131 and the second green pixel corresponding region 134, and in the diagonal direction, it is smallest at the center of the blue pixel corresponding region 132. If the phase at the center of the red pixel-corresponding region 133 for red light is 2π, then the phases at the centers of the first green pixel-corresponding region 131 and the second green pixel-corresponding region 134 are, for example, 0.9π to 1.1π, and the phase at the center of the blue pixel-corresponding region 132 is a smaller value than the phases at the centers of the first green pixel-corresponding region 131 and the second green pixel-corresponding region 134, for example, 0.6π to 0.9π.

[0058] Referring to Figures 7A and 7C, the green light that has passed through the color separation lens array 130 can have a fourth phase distribution PP4 in which it is largest at the center of the second green pixel corresponding region 134 and decreases as it moves away from the center of the second green pixel corresponding region 134. Comparing the first phase distribution PP1 of the green light in Figure 6A with the fourth phase distribution PP4 of the green light in Figure 7A, the fourth phase distribution PP4 is the same as the first phase distribution PP1 shifted by about one pixel pitch in the X and Y directions. That is, the first phase distribution PP1 has the largest phase at the center of the first green pixel corresponding region 131, while the fourth phase distribution PP4 has the largest phase at the center of the second green pixel corresponding region 134, which is about one pixel pitch away from the center of the first green pixel corresponding region 131 in the X and Y directions. The phase distributions in Figure 6B and Figure 7C, which show the phase at the centers of pixel corresponding regions 131, 132, 133, and 134, are also identical. Again, using the second green pixel corresponding region 134 as a reference, if we define the phase distribution of green light as 2π based on the phase of the light emitted from the center of the second green pixel corresponding region 134, then at the centers of the blue pixel corresponding region 132 and the red pixel corresponding region 133, the phase is 0.9π to 1.1π; at the center of the first green pixel corresponding region 131, the phase is 2π; and at the point of contact between the first green pixel corresponding region 131 and the second green pixel corresponding region 134, light with a phase of 1.1π to 1.5π may be emitted.

[0059] Figure 7D illustrates the direction of propagation of red light incident on a red light focusing region, and Figure 7E illustrates an array of red light focusing regions.

[0060] Red light is focused onto the red pixel 113 by the color separation lens array 130, as shown in Figure 7D, and red light from pixel-corresponding regions 131, 132, 133, and 134 is incident on the red pixel 113. The phase distribution of red light, as explained earlier in Figures 7A and 7B, focuses the red light that has passed through the red light focusing region RL, which is created by connecting the centers of four adjacent blue pixel-corresponding regions 132 with their vertices touching the red pixel-corresponding region 133, onto the red pixel 113. Therefore, as illustrated in Figure 7E, the color separation lens array 130 can operate as a red light focusing region RL array that focuses red light onto the red pixel. The area of ​​the red light focusing region RL is larger than the corresponding red pixel 113, for example, 1.5 to 4 times larger. The red light focusing region RL is partially superimposed on the first green light focusing region GL1, the blue light focusing region BL, and the second green light focusing region GL2 (Figure 7F), which will be described later.

[0061] Referring to Figures 7F and 7G, green light incident around the second green pixel corresponding region 134 travels similarly to green light incident around the first green pixel corresponding region 131, and is focused on the second green pixel 114, as illustrated in Figure 7F. In addition to the second green pixel corresponding region 134, green light from the blue pixel corresponding region 132 and the red pixel corresponding region 133 also incident on the second green pixel 114. That is, the phase distribution of green light described in Figures 7A and 7C focuses the green light that has passed through the second green light focusing region GL2, which connects the centers of the two blue pixel corresponding regions 132 and the two red pixel corresponding regions 133 that are adjacent to the second green pixel corresponding region 134 with one side touching it, onto the second green pixel 114. Therefore, as illustrated in Figure 7G, the color separation lens array 130 can operate as a second green light focusing region GL2 array that focuses green light onto the second green pixel 114. The second green light focusing region GL2 has a larger area than the corresponding second green pixel 114, for example, 1.2 to 2 times larger.

[0062] Figures 8A to 8H are diagrams illustrating the manufacturing method of the pixel array 1100 shown in Figure 4A.

[0063] First, as shown in Figure 8A, a spacer layer 120 is formed on the upper part of the sensor substrate 110. The spacer layer 120 may be, for example, an SiO2 layer, and can be formed by various physical or chemical methods, such as thermal oxidation.

[0064] Next, as shown in Figure 8B, a first etching prevention layer 140a is formed on top of the spacer layer 120. The first etching prevention layer 140a is a layer made of a material that can selectively etch the first dielectric layer DL1 (Figure 8C), in other words, a material that is not etched by the material used to etch the first dielectric layer DL1, such as HfO2. The HfO2 layer can be formed by physical or chemical formation methods, such as PVD (physical vapor deposition), CVD (chemical vapor deposition), PE-CVD (plasma-enhanced chemical vapor deposition), or ALD (atomic layer deposition).

[0065] Next, as shown in Figure 8C, a first dielectric layer DL1 is formed on top of the first etching prevention layer 140a. The first dielectric layer DL1 is also an SiO2 layer.

[0066] Next, as shown in Figure 8D, a first pattern DL1a is formed on the first dielectric layer DL1 via a photoprocess. A photoresist is formed on the upper part of the first dielectric layer DL1, and after patterning the photoresist via an exposure process, the exposed first dielectric layer DL1 can be removed via an etching process, for example, a reactive ion etching process of a fluorine substrate, to form the first pattern DL1a. During the etching process of the first dielectric layer DL1, the first etching prevention layer 140a can prevent damage to the spacer layer 120.

[0067] Next, as shown in Figure 8E, nanopost NPa is formed on the first dielectric layer DL1. Using atomic layer deposition or the like, a material with a refractive index different from that of the material forming the first dielectric layer DL1, such as TiO2, can be packed into the first pattern DL1a to form nanopost NPa. The material deposited on the upper part of the first dielectric layer DL1 can be removed after deposition via a chemical mechanical planarization (CMP) process to form the first lens layer 130a.

[0068] Subsequently, the second lens layer 130b can be formed through a process similar to that of the first lens layer 130a. For example, as shown in Figure 8F, a second etching prevention layer 140b can be formed on top of the first lens layer 130a, and as shown in Figure 8G, a second dielectric layer DL2 can be formed on top of the second etching prevention layer 140b. After patterning the second dielectric layer DL2 to form a second pattern DL2a, nanoposts NPb can be formed on the second dielectric layer DL2 as shown in Figure 8H, thereby forming the second lens layer 130b.

[0069] Figures 9A and 9B show the spectral changes of light incident on the sensor substrate when the thickness of the etching prevention layer changes.

[0070] Figure 9A shows the spectral difference of light sensed by the sensor substrate 110 when the first etching prevention layer 140a and the second etching prevention layer 140b are absent and when the 10 nm thick first etching prevention layer 140a and the second etching prevention layer 140b are present. In Figure 9A, the first spectrum S1 shows the spectrum of light sensed by the first photosensing cell 111 and the fourth photosensing cell 114, which correspond to the green pixels G, when the first etching prevention layer 140a and the second etching prevention layer 140b are absent. That is, the first spectrum S1 shows the spectrum of light sensed by the green pixels 111 and 114 after the light incident on the pixel array 1100 is split by the color separation lens array 130, with the 490 nm to 580 nm wavelength band, which corresponds to green light, being the most abundant. In Figure 9A, the second spectrum S2 shows the spectrum of light detected by the blue pixel 112 when the first etching prevention layer 140a and the second etching prevention layer 140b are not formed, with the 420nm to 475nm wavelength band corresponding to blue light being the most abundant. In Figure 9A, the third spectrum S3 shows the spectrum of light detected by the red pixel 113 when the first etching prevention layer 140a and the second etching prevention layer 140b are not formed, with the 590nm to 680nm wavelength band corresponding to red light being the most abundant.

[0071] QE (quantum efficiency) refers to the degree to which photons incident on the pixel array 1100 are converted into electrons by the photoelectric conversion element. For example, when 80% of the incident photons are converted into electrons, the QE is 0.8, and when 100% of the incident photons are converted into electrons, the QE can be set to 1. In a typical pixel array, the QE does not exceed 1, but the pixel arrays in Figures 4A and 4B include a color separation lens array 130, so the QE can exceed 1. For example, a QE of 2 for a 500nm wavelength in the blue pixel 112 means that when 100 photons of 500nm wavelength light travel towards the blue pixel 112, electrons equivalent to 200 photons are generated in the blue pixel 112. In the pixel array 1100 shown in Figures 4A and 4B, not only 500nm wavelength photons traveling toward the blue pixel 112, but also 500nm wavelength photons traveling toward the first green pixel 111, the second green pixel 114, and the red pixel 113 are incident on the blue pixel 112, resulting in a QE of 1 or more. In other words, the amount of 500nm wavelength photons incident on the blue pixel 112 may be greater than the amount of 500nm wavelength photons traveling toward the blue pixel 112 before passing through the color separation lens array 130, so the QE of the blue pixel 112 related to 500nm wavelength light can also be 1 or more.

[0072] In Figure 9A, the corrected first'spectrum S1', second'spectrum S2', and third'spectrum S3', shown by dashed lines, are the light spectra sensed by the sensor substrate 110 when the first etching prevention layer 140a and second etching prevention layer 140b, which are 10 nm thick, are present. This shows how the first spectrum S1, second spectrum S2, and third spectrum S3 change due to the 10 nm thick first etching prevention layer 140a and second etching prevention layer 140b. Referring to Figure 9A, the QE decreases due to the absorption, reflection, or scattering of light by the 10 nm first etching prevention layer 140a and second etching prevention layer 140b. In the first'spectrum S1', second'spectrum S2', and third'spectrum S3', the second'spectrum S2), which has the largest QE reduction rate at its peak, shows a 3.2% decrease in QE at a wavelength of 440 nm compared to the second spectrum S2.

[0073] In Figure 9B, the first "spectrum S1", second "spectrum S2", and third "spectrum S3", represented by dashed lines, illustrate the changes in the first spectrum S1, second spectrum S2, and third spectrum S3 due to the 15 nm thick first etching prevention layer 140a and second etching prevention layer 140b. The second "spectrum S2", which has the largest QE reduction rate at the peak, shows a 6.8% decrease in QE at a wavelength of 440 nm compared to the second spectrum S2.

[0074] Figures 9A and 9B show that as the thickness of the etching prevention layer increases, the QE of the sensor substrate decreases, and the light utilization efficiency decreases. However, if the thickness of the etching prevention layer is 2 nm or less, the etching prevention function will be reduced, so the etching prevention layer should be formed to a thickness of 3 nm to 30 nm, or 5 nm to 15 nm.

[0075] Figures 10A and 10B are cross-sectional views of a pixel array that further includes an anti-reflective layer on top of the color separation lens array.

[0076] Referring to Figures 10A and 10B, the anti-reflective layer 150 is formed on the upper part of the color separation lens array 130, reducing the amount of incident light reflected by the upper surface of the color separation lens array 130, thereby improving the light utilization efficiency of the pixel array 1100a. In other words, the anti-reflective layer 150 helps to ensure that light incident on the pixel array 1100a from the outside is transmitted without being reflected by the upper surface of the color separation lens array 130 and can be detected by the sensor substrate 110.

[0077] The anti-reflective layer 150 may be a single layer or a structure in which multiple layers are stacked, and as shown in Figure 10A, it may be a single layer made of a material with a different refractive index from the material forming the nanopost NPa,NPb, for example, SiO2. The anti-reflective layer 150 may also be formed to a thickness of 80 nm to 120 nm. Furthermore, as shown in Figure 10B, the anti-reflective layer 150 may include a first anti-reflective layer 150a and a second anti-reflective layer 150b stacked vertically. The first anti-reflective layer 150a may be, for example, an SiO2 layer and may also be formed to a thickness of 80 nm to 120 nm. The second anti-reflective layer 150b may be, for example, a Si3N4 layer and may also be formed to a thickness of 20 nm to 60 nm.

[0078] Figures 11A and 11B are diagrams illustrating the spectral changes of light incident on the sensor substrate due to the anti-reflective layer.

[0079] Figure 11A shows the first a spectrum S1a, second a spectrum S2a, and third a spectrum S3a, which are altered from the corrected spectra S1', S2', and S3' in Figure 9A by a single layer of SiO2 anti-reflective layer 150 formed to a thickness of 100 nm, as shown in Figure 10A. Referring to Figure 11A, of the altered first a spectrum S1a, second spectrum S2a, and third a spectrum S3a, the second a spectrum S2a shows the highest QE increase rate at the peak, for example, at a wavelength of 440 nm, the QE increased by 0.86% compared to the second spectrum S2'.

[0080] Figure 11B shows the corrected spectra S1', S2', and S3' from Figure 9A, as altered by a first anti-reflective layer 150a formed of 100 nm thick SiO2 and a second anti-reflective layer 150b formed of 40 nm thick Si3N4, as shown in Figure 10B. Referring to Figure 11B, of the altered spectra S1b, S2b, and S3b, the second spectrum S2b showed the highest QE increase at the peak; for example, at a wavelength of 440 nm, the QE increased by 2.37% compared to the second spectrum S2'.

[0081] Figures 11A and 11B show that applying an anti-reflective layer can improve the light utilization efficiency of a pixel array.

[0082] The image sensor 1000, including the aforementioned pixel array 1100, has virtually no light loss due to color filters, such as organic color filters, and can therefore provide a sufficient amount of light to the pixels even when the pixel size is small. Consequently, it is possible to fabricate ultra-high resolution micro-high sensitivity image sensors with hundreds of millions or more pixels. Such ultra-high resolution micro-high sensitivity image sensors can be used in a variety of high-performance optical or high-performance electronic devices. Such electronic devices include, but are not limited to, smartphones, mobile phones, handphones, PDAs (personal digital assistants), laptops, PCs (personal computers), various portable devices, home appliances, security cameras, medical cameras, automobiles, Internet of Things (IoT) devices, and other mobile or non-mobile computing devices.

[0083] The electronic device may further include, in addition to the image sensor 1000, a processor for controlling the image sensor, such as an application processor (AP). The processor can drive an operating system or application program, control numerous hardware or software components, and perform various data processing and calculations. The processor may further include a graphics processing unit (GPU) and / or an image signal processor. If the processor includes an image signal processor, the image (or video) acquired by the image sensor can be stored and / or output using the processor.

[0084] Figure 12 is a block diagram showing an example of an electronic device 1201 including an image sensor 1000. Referring to Figure 12, in a network environment 1200, the electronic device 1201 can communicate with other electronic devices 1202 via a first network 1298 (such as a short-range wireless communication network), or with other electronic devices 1204 and / or a server 1208 via a second network 1299 (such as a long-range wireless communication network). The electronic device 1201 can also communicate with electronic device 1204 via the server 1208. The electronic device 1201 may include a processor 1220, memory 1230, input device 1250, acoustic output device 1255, display device 1260, audio module 1270, sensor module 1276, interface 1277, haptic module 1279, camera module 1280, power management module 1288, battery 1289, communication module 1290, subscriber identification module 1296, and / or antenna module 1297. Some of these components (such as the display device 1260) may be omitted from the electronic device 1201, or other components may be added. Some of these components may also be embodied as a single integrated circuit. For example, the sensor module 1276 (such as a fingerprint sensor, iris sensor, or illuminance sensor) may also be embodied by being embedded in the display device 1260 (such as a display).

[0085] The processor 1220 can execute software (such as program 1240) and control one or more other components (hardware components, software components, etc.) of the electronic devices 1201 connected to the processor 1220, and can perform a variety of data processing or calculations. As part of the data processing or calculations, the processor 1220 can load instructions and / or data received from other components (such as sensor module 1276, communication module 1290) into volatile memory 1232, process the instructions and / or data stored in volatile memory 1232, and store the resulting data in non-volatile memory 1234. The processor 1220 may include a main processor 1221 (central processing unit, application processor, etc.) and auxiliary processors 1223 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that are independent of or operate together with it. The auxiliary processors 1223 use less power than the main processor 1221 and can perform specialized functions.

[0086] The auxiliary processor 1223 can act as a substitute for the main processor 1221 when the main processor 1221 is inactive (sleep state), or, together with the main processor 1221, control the functions and / or states related to some components of the electronic device 1201 (such as the display device 1260, sensor module 1276, and communication module 1290) when the main processor 1221 is active (application execution state). The auxiliary processor 1223 (such as the image signal processor and communication processor) can also be embodied as part of other functionally related components (such as the camera module 1280 and communication module 1290).

[0087] Memory 1230 can store various data required by the components of the electronic device 1201 (such as the processor 1220 and the sensor module 1276). This data may include, for example, software (such as the program 1240) and input and / or output data for the instructions associated with it. Memory 1230 may also include volatile memory 1232 and / or non-volatile memory 1234. The non-volatile memory 1234 may include an internal memory 1236 fixedly installed in the electronic device 1201 and a removable external memory 1238.

[0088] Program 1240 is also stored as software in memory 1230 and may include an operating system 1242, middleware 1244 and / or application 1246.

[0089] The input device 1250 can receive instructions and / or data used by components of the electronic device 1201 (such as the processor 1220) from outside the electronic device 1201 (such as a user). The input device 1250 may include a microphone, mouse, keyboard, and / or digital pen (such as a stylus pen).

[0090] The acoustic output device 1255 can output an acoustic signal to the outside of the electronic device 1201. The acoustic output device 1255 may include a speaker and / or a receiver. The speaker may also be used for general purposes such as multimedia playback or recording and playback, and the receiver may also be used to receive incoming telephone calls. The receiver may be coupled to part of the speaker or may be embodied as a separate, independent device.

[0091] The display device 1260 can visually provide information outside of the electronic device 1201. The display device 1260 may include a display, a hologram device or a projector, and a control circuit for controlling said device. The display device 1260 may also include touch circuitry configured to sense touches and / or sensor circuitry (such as a pressure sensor) configured to measure the intensity of the force produced by the touch.

[0092] The audio module 1270 can convert sound into electrical signals or vice versa. The audio module 1270 can acquire sound via the input device 1250 or output sound via the speakers and / or headphones of other electronic devices (such as electronic device 1202) directly or wirelessly connected to the sound output device 1255 and / or electronic device 1201.

[0093] The sensor module 1276 can sense the operating state of the electronic device 1201 (power, temperature, etc.) or the external environmental state (user state, etc.), and generate electrical signals and / or data values ​​corresponding to the sensed state. The sensor module 1276 may include a gesture sensor, gyro sensor, barometric pressure sensor, magnetic sensor, acceleration sensor, grip sensor, proximity sensor, color sensor, IR (infrared) sensor, biosensor, temperature sensor, humidity sensor, and / or illuminance sensor.

[0094] Interface 1277 can support one or more specified protocols used for the electronic device 1201 to connect directly or wirelessly with other electronic devices (such as electronic device 1202). Interface 1277 may include HDMI® (High Definition Multimedia Interface), USB (Universal Serial Bus) interface, SD (Secure Digital) card interface, and / or audio interface.

[0095] The connecting terminal 1278 may include a connector that allows the electronic device 1201 to be physically connected to other electronic devices (such as electronic device 1202). The connecting terminal 1278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0096] The haptic module 1279 can convert electrical signals into mechanical stimuli (such as vibration or movement) or electrical stimuli that can be perceived by the user through touch or kinesthetic sense. The haptic module 1279 may include a motor, a piezoelectric element, and / or an electrical stimulator.

[0097] The camera module 1280 can capture still images and videos. The camera module 1280 may include a lens assembly containing one or more lenses, an image sensor 1000 (Figure 1), an image signal processor, and / or a flash. The lens assembly included in the camera module 1280 can collect light emitted from the subject being imaged.

[0098] The power management module 1288 can manage the power supplied to the electronic device 1201. The power management module 1288 can also be implemented as part of a PMIC (power management integrated circuit).

[0099] The battery 1289 can supply power to the components of the electronic device 1201. The battery 1289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0100] The communication module 1290 can establish direct (wired) communication channels and / or wireless communication channels between the electronic device 1201 and other electronic devices (such as electronic devices 1202, 1204, and server 1208), and can support communication through the established communication channels. The communication module 1290 may include one or more communication processors that operate independently of the processor 1220 (such as an application processor) and support direct and / or wireless communication. The communication module 1290 may also include a wireless communication module 1292 (such as a cellular communication module, a short-range wireless communication module, or a GNSS (global navigation satellite system) communication module) and / or a wired communication module 1294 (such as a LAN (local area network) communication module or a power line communication module). Of these communication modules, the relevant communication module can communicate with other electronic devices via a first network 1298 (a short-range communication network such as Bluetooth®, Wi-Fi (wireless fidelity) direct, or IrDA (infrared data association)) or a second network 1299 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN (wide area network), etc.)). Such various types of communication modules may be integrated into a single component (such as a single chip) or embodied by multiple separate components (multiple chips). The wireless communication module 1292 can use subscriber information (such as an International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module 1296 to verify and authenticate the electronic device 1201 within a communication network such as the first network 1298 and / or the second network 1299.

[0101] The antenna module 1297 can transmit and / or receive signals and / or power to or from an external source (such as other electronic devices). The antenna may include a radiator consisting of a conductive pattern formed on a substrate (such as a PCB (printed circuit board)). The antenna module 1297 may include one or more antennas. If multiple antennas are included, the communication module 1290 may select an antenna from among the multiple antennas that is suitable for the communication scheme used in the communication network, such as the first network 1298 and / or the second network 1299. Signals and / or power are transmitted and received between the communication module 1290 and other electronic devices via the selected antenna. Other components other than antennas (such as an RFIC (radio frequency integrated circuit)) may also be included as part of the antenna module 1297.

[0102] Some of these components are interconnected with peripheral devices via communication methods (bus, GPIO (general purpose input and output), SPI (serial peripheral interface), MIPI (mobile industry processor interface), etc.) and can exchange signals (instructions, data, etc.) with each other.

[0103] The instruction or data is transmitted to and received between the electronic device 1201 and an external electronic device 1204 via a server 1208 connected to the second network 1299. The other electronic devices 1202 and 1204 may be identical to electronic device 1201 or of a different type. All or part of the operations performed by electronic device 1201 may be performed by one or more of the other electronic devices 1202, 1204, and 1208. For example, when electronic device 1201 needs to perform a certain function or service, instead of performing the function or service itself, it can request one or more other electronic devices to perform part or all of that function or service. One or more other electronic devices that receive the request can perform the additional function or service related to the request and communicate the results of that performance to electronic device 1201. Cloud computing technology, distributed computing technology, and / or client-server computing technology may be used for this purpose.

[0104] Figure 13 is a block diagram illustrating the camera module 1280 of Figure 12. Referring to Figure 13, the camera module 1280 may include a lens assembly 1310, a flash 1320, an image sensor 1000 (e.g., image sensor 1000 (Figure 1)), an image stabilizer 1340, memory 1350 (e.g., buffer memory), and / or an image signal processor 1360. The lens assembly 1310 can collect light emitted from a subject that is the subject of image capture. The camera module 1280 may include multiple lens assemblies 1310, in which case the camera module 1280 may also be a dual camera, a 360° camera, or a spherical camera. Some of the multiple lens assemblies 1310 may have the same lens attributes (angle of view, focal length, autofocus, F-number, optical zoom, etc.) or may have different lens attributes. The lens assembly 1310 may include a wide-angle lens or a telephoto lens.

[0105] The flash 1320 can emit light used to enhance light emitted or reflected from the subject. The flash 1320 may include one or more light-emitting diodes (such as RGB (red-green-blue) LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or a xenon lamp. The image sensor 1000 is also the image sensor described in Figure 1, and can acquire an image corresponding to the subject by converting light emitted or reflected from the subject and transmitted through the lens assembly 1310 into an electrical signal. The image sensor 1000 may include one or more sensors selected from image sensors with different attributes, such as an RGB sensor, a BW (black and white) sensor, an IR sensor, or a UV sensor. Each sensor included in the image sensor 1000 is also embodied as a CCD sensor and / or a CMOS sensor.

[0106] The image stabilizer 1340 responds to the movement of the camera module 1280 or the electronic device 1201 containing it (Figure 12) by moving one or more lenses or the image sensor 1000 included in the lens assembly 1310 in a specific direction, or by controlling the operating characteristics of the image sensor 1000 (such as adjusting the read-out timing) to compensate for the negative effects of the movement. The image stabilizer 1340 can sense the movement of the camera module 1280 or the electronic device 1201 by utilizing a gyro sensor (not shown) or an accelerometer (not shown) located inside or outside the camera module 1280. The image stabilizer 1340 can also be implemented optically.

[0107] Memory 1350 can store some or all of the image data acquired via the image sensor 1000 for subsequent image processing. For example, when multiple images are acquired at high speed, the acquired original data (Bayer-patterned data, high-resolution data, etc.) is stored in memory 1350, and after displaying only the low-resolution images, the original data of the selected (user-selected, etc.) image is transmitted to the image signal processor 1360. Memory 1350 is integrated into the memory 1230 of the electronic device 1201 or can be configured as a separate memory operating independently.

[0108] The image signal processor 1360 can perform image processing on images acquired via the image sensor 1000 or image data stored in the memory 1350. Image processing may include depth map generation, three-dimensional modeling, panorama generation, feature point extraction, image synthesis, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1360 can perform control (such as exposure time control or readout timing control) on components included in the camera module 1280 (such as the image sensor 1000). Images processed by the image signal processor 1360 are further stored in the memory 1350 for additional processing, or are provided to external components of the camera module 1280 (such as the memory 1230, display device 1260, electronic device 1202, electronic device 1204, server 1208, etc.). The image signal processor 1360 can be integrated with the processor 1220 or configured as a separate processor operating independently of the processor 1220. If the image signal processor 1360 is configured as a separate processor from the processor 1220, the image processed by the image signal processor 1360 will undergo additional image processing by the processor 1220 and then be displayed via the display device 1260.

[0109] The electronic device 1201 may include a plurality of camera modules 1280, each having different attributes or functions. In such a case, one of the camera modules 1280 may be a wide-angle camera and another may be a telephoto camera. Similarly, one of the camera modules 1280 may be a front camera and another may be a rear camera.

[0110] The image sensor 1000 according to one embodiment can also be applied to a mobile phone or smartphone 1400 shown in Figure 14, a tablet or smart tablet 1500 shown in Figure 15, a digital camera or camcorder 1600 shown in Figure 16, a notebook computer 1700 shown in Figure 17, or a television or smart television 1800 shown in Figure 18, etc. For example, a smartphone 1400 or smart tablet 1500 may include multiple high-resolution cameras, each equipped with a high-resolution image sensor. These high-resolution cameras can be used to extract depth information of subjects in the image, adjust outfocusing of the image, or automatically identify subjects in the image.

[0111] Furthermore, the image sensor 1000 can also be applied to the smart refrigerator 1900 shown in Figure 19, the security camera 2000 shown in Figure 20, the robot 2100 shown in Figure 21, and the medical camera 2200 shown in Figure 22. For example, the smart refrigerator 1900 can use the image sensor to automatically recognize food items inside the refrigerator and inform the user via smartphone about the presence of specific food items, the types of food items being added or removed, etc. The security camera 2000 can provide ultra-high-resolution images and, using high sensitivity, can recognize objects or people in the image even in dark environments. The robot 2100 can be deployed to disaster sites or industrial sites where people cannot directly approach and can provide high-resolution images. The medical camera 2200 can provide high-resolution images for diagnosis or surgery and can dynamically adjust its field of view.

[0112] Furthermore, the image sensor 1000 can also be applied to the vehicle 2300, as illustrated in Figure 23. The vehicle 2300 may include a plurality of vehicle cameras 2310, 2320, 2330, and 2340 positioned in various locations, and each of these vehicle cameras 2310, 2320, 2330, and 2340 may include an image sensor according to one embodiment. The vehicle 2300 can utilize the plurality of vehicle cameras 2310, 2320, 2330, and 2340 to provide the driver with a variety of information relating to the interior or surroundings of the vehicle 2300, automatically recognize objects or people in the image, and provide information necessary for autonomous driving.

[0113] Even if the image sensor comprising the aforementioned color separation lens array and the electronic device including it are described with reference to embodiments illustrated in the drawings, these are merely illustrative, and a person skilled in the art will understand that a variety of modifications and equivalent other embodiments are possible. Therefore, the disclosed embodiments should be considered in an explanatory rather than restrictive manner. The scope of rights is indicated in the claims, not in the foregoing description, and all differences within an equivalent scope should be interpreted as being included within the scope of rights. [Explanation of Symbols]

[0114] 110-pixel array 130-color separation lens array 1000 Image Sensors 1010 Timing Controller 1020 Raw Decoder 1030 Output Circuit 1100 pixel array

Claims

1. A sensor substrate including a first pixel for sensing a first wavelength of light and a second pixel for sensing a second wavelength of light, A transparent spacer layer is placed on top of the sensor substrate, The spacer layer includes a color separation lens array, The aforementioned color separation lens array is The system includes a first lens layer disposed on top of the spacer layer, a second lens layer disposed on top of the first lens layer, and a first etching prevention layer formed between the first lens layer and the second lens layer. The first lens layer and the second lens layer each include a first pixel-corresponding region corresponding to the first pixel and a second pixel-corresponding region corresponding to the second pixel, and each of the first pixel-corresponding region and the second pixel-corresponding region includes one or more nanoposts and a dielectric layer provided between the one or more nanoposts. The first lens layer and the second lens layer are configured to form the color separation lens array, to focus the first wavelength light incident on the color separation lens array toward the first pixel, and to focus the second wavelength light incident on the color separation lens array toward the second pixel. The nanoposts of the second lens layer are positioned at a location shifted toward the center of the color separation lens array relative to the nanoposts of the first lens layer. The first etching prevention layer is provided on the upper surface of one or more nanoposts of the first lens layer and on the upper surface of the dielectric layer of the first lens layer, in an image sensor.

2. The image sensor according to claim 1, wherein the thickness of the first etching prevention layer is 3 nm to 30 nm.

3. The image sensor according to claim 1, wherein the thickness of the first etching prevention layer is 5 nm to 15 nm.

4. The first etching prevention layer is HfO ２ The image sensor according to any one of claims 1 to 3.

5. The image sensor according to any one of claims 1 to 4, further comprising an anti-reflective layer disposed on the upper part of the color separation lens array.

6. The anti-reflective layer is SiO ２ The image sensor according to claim 5, which is a layer.

7. The image sensor according to claim 5 or 6, wherein the thickness of the anti-reflective layer is 80 nm to 120 nm.

8. The image sensor according to any one of claims 5 to 7, wherein the anti-reflective layer includes a first anti-reflective layer made of a first substance and a second anti-reflective layer made of a second substance different from the first substance.

9. The first substance is SiO ２ The second substance includes Si ３ N ４ The image sensor according to claim 8, including the image sensor described in claim 8.

10. The image sensor according to claim 8 or 9, wherein the thickness of the second anti-reflective layer is 20 nm to 60 nm.

11. The image sensor according to any one of claims 1 to 10, further comprising a second etching prevention layer disposed between the spacer layer and the color separation lens array.

12. The image sensor according to any one of claims 1 to 11, wherein each of the first lens layer and the second lens layer includes a high refractive index material having a first refractive index and a low refractive index material having a second refractive index provided between the high refractive index materials.

13. The image sensor according to any one of claims 1 to 12, wherein the color separation lens array focuses the second wavelength light onto the second pixel.

14. The steps include forming a spacer layer on top of a sensor substrate that includes a plurality of first pixels for sensing a first wavelength of light and a plurality of second pixels for sensing a second wavelength of light, The steps include forming a first lens layer on the upper part of the spacer layer, The steps include forming a first etching prevention layer on the upper part of the first lens layer, The steps include forming a first dielectric layer on the upper part of the first etching prevention layer, The steps include forming an engraved pattern on the first dielectric layer, The process includes the step of filling the engraved pattern with a first high-refractive-index material to form a second lens layer, The first lens layer and the second lens layer are configured to form a color separation lens array, to focus the first wavelength light incident on the color separation lens array toward the plurality of first pixels, and to focus the second wavelength light incident on the color separation lens array toward the plurality of second pixels. The first lens layer and the second lens layer each include a plurality of first pixel-corresponding regions corresponding to the plurality of first pixels and a plurality of second pixel-corresponding regions corresponding to the plurality of second pixels, each of the plurality of first pixel-corresponding regions and the plurality of second pixel-corresponding regions includes one or more nanoposts, the first lens layer includes a second dielectric layer provided between the one or more nanoposts, and the second lens layer includes a first dielectric layer provided between the one or more nanoposts. The nanoposts of the second lens layer are positioned at a location shifted toward the center of the color separation lens array relative to the nanoposts of the first lens layer. A method for manufacturing an image sensor, wherein the first etching prevention layer is provided on the upper surface of one or more nanoposts in the first lens layer and on the upper surface of the second dielectric layer.

15. The method for manufacturing an image sensor according to claim 14, wherein the thickness of the first etching prevention layer is 3 nm to 30 nm.

16. The method for manufacturing an image sensor according to claim 14, wherein the thickness of the first etching prevention layer is 5 nm to 15 nm.

17. The first etching prevention layer is HfO ２ The method for manufacturing an image sensor according to any one of claims 14 to 16.

18. The step of forming the first lens layer is: The steps include forming a second etching prevention layer on the upper part of the spacer layer, The steps include forming a second dielectric layer on top of the second etching prevention layer, The steps include forming an engraved pattern on the second dielectric layer, A method for manufacturing an image sensor according to any one of claims 14 to 17, comprising the step of filling an incised pattern in the second dielectric layer with a second high refractive index material.

19. A method for manufacturing an image sensor according to any one of claims 14 to 18, further comprising the step of forming an anti-reflective layer on the upper part of the color separation lens array.

20. The anti-reflective layer is SiO ２ A method for manufacturing an image sensor according to claim 19, wherein the layer is a layer.

21. The method for manufacturing an image sensor according to claim 19 or 20, wherein the anti-reflective layer is 80 nm to 120 nm in thickness.

22. The method for manufacturing an image sensor according to any one of claims 19 to 21, wherein the step of forming the anti-reflective layer is to form a second anti-reflective layer and to form a first anti-reflective layer on top of the second anti-reflective layer.

23. The first antireflection layer contains SiO ２ and the second antireflection layer contains Si ３ N ４ The method of manufacturing an image sensor according to claim 22.

24. The method for manufacturing an image sensor according to claim 22 or 23, wherein the thickness of the first anti-reflective layer is 80 nm to 120 nm, and the thickness of the second anti-reflective layer is 20 nm to 60 nm.

25. An image sensor according to any one of claims 1 to 13, An electronic device comprising a processor that controls the operation of the image sensor and stores and outputs the signal generated by the image sensor.

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