Solid-state imaging device and method for manufacturing a solid-state imaging device

Abstract

To provide a solid-state imaging apparatus capable of correctly inspecting.SOLUTION: The solid-state imaging apparatus includes a semiconductor substrate which has a first area in which a plurality of first photodiodes are arranged along a first direction and a second area in which a plurality of second photodiodes are arranged along the first direction, and an insulating film which is arranged on the semiconductor substrate so as to cover the first area and the second area. The insulating film includes at least an optical path changing part for changing an optical path of light which comes in the insulating film on the first area and travels toward the second area, in an intermediate area between one of the plurality of first photodiodes closest to the second area and one of the plurality of second photodiodes closest to the first area.SELECTED DRAWING: Figure 1A

Description

Technical Field

[0001] Embodiments of the present invention relate to a solid-state imaging device and a method for manufacturing the solid-state imaging device.

Background Art

[0002] In devices such as scanners, solid-state imaging devices such as linear image sensors in which pixels are arranged in a predetermined direction are used. In a solid-state imaging device, an insulating film such as an antireflection film is disposed on a photodiode constituting a pixel. Due to the influence of this insulating film, ripples may occur in the spectral spectrum of the photodiode. In order to suppress such ripples, a structure in which a recess is formed in the insulating film on the photodiode is known.

[0003] By the way, a solid-state imaging device is manufactured by forming a plurality of solid-state imaging devices (chips) on a semiconductor wafer (hereinafter simply referred to as "wafer") and then singulating them by dicing. On the other hand, there are cases where a wafer on which a plurality of solid-state imaging devices are formed is shipped as it is without being singulated. In such a case, in a quality inspection before shipment or the like, light incident on one chip may be propagated and received by an adjacent chip due to the optical path being changed by the above-mentioned recess in the insulating film on the photodiode. As a result, the light reception sensitivity of a specific pixel of the adjacent chip may be evaluated to be higher than the original light reception sensitivity, and the quality inspection cannot be performed correctly.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

[0005] Embodiments of the present invention provide a solid-state imaging device capable of proper inspection and a method for manufacturing a solid-state imaging device. [Means for solving the problem]

[0006] The solid-state imaging device according to this embodiment includes a semiconductor substrate having a first region in which a plurality of first photodiodes are arranged along a first direction, and a second region in which a plurality of second photodiodes are arranged along the first direction, and an insulating film disposed on the semiconductor substrate so as to cover the first region and the second region, wherein the insulating film is provided with an optical path changing section that changes the optical path of light incident on the insulating film on the first region and directed toward the second region, in an intermediate region between the first-end photodiode closest to the second region among the plurality of first photodiodes and the second-end photodiode closest to the first region among the plurality of second photodiodes. [Brief explanation of the drawing]

[0007] [Figure 1A] This is a partial top view of a solid-state imaging device according to the first embodiment. [Figure 1B] This is a cross-sectional view along line II in Figure 1A. [Figure 1C] This is an enlarged view of the inter-chip region in Figure 1B, illustrating the effect of the solid-state imaging apparatus according to the first embodiment. [Figure 1D] This diagram illustrates the layout conditions for the optical path changing section. [Figure 2A] This is a cross-sectional view illustrating an example of a process for manufacturing a solid-state imaging device according to the first embodiment. [Figure 2B]This is a cross-sectional view illustrating an example of the steps for manufacturing a solid-state imaging device according to the first embodiment, following Figure 2A. [Figure 2C] Figure 2B is a cross-sectional view illustrating an example of the steps for manufacturing a solid-state imaging device according to the first embodiment. [Figure 3] This is a partial top view of a solid-state imaging device according to a modified example 1 of the first embodiment. [Figure 4] This is a partial top view of a solid-state imaging device according to a modified example 2 of the first embodiment. [Figure 5] This is a partial top view of a solid-state imaging device according to a modified example 3 of the first embodiment. [Figure 6] This is a top view of a solid-state imaging device according to a modified example 4 of the first embodiment. [Figure 7A] This is a partial top view of a solid-state imaging device according to the second embodiment. [Figure 7B] This is a cross-sectional view along line II in Figure 7A. [Figure 7C] This is an enlarged view of the inter-chip region in Figure 7B, illustrating the effects of the solid-state imaging apparatus according to the second embodiment. [Figure 8] This is a partial cross-sectional view of a solid-state imaging device according to the third embodiment. [Modes for carrying out the invention]

[0008] Embodiments of the present invention will be described below with reference to the drawings. These embodiments are not intended to limit the present invention. The drawings are schematic or conceptual, and the proportions of each part may not necessarily be the same as those of actual objects. In the specification and drawings, elements similar to those described above are denoted by the same reference numerals with respect to previously shown drawings, and detailed explanations are omitted as appropriate.

[0009] For the sake of explanation, we will use the XYZ Cartesian coordinate system as shown in the diagram. The Z-axis direction is the stacking direction (thickness direction) of the solid-state imaging device. In the Z-direction, the insulating film 4 side is also referred to as "up," and the semiconductor substrate 2 side is referred to as "down." However, this notation is for convenience only and is unrelated to the direction of gravity.

[0010] (First Embodiment) Referring to FIGS. 1A and 1B, the solid-state imaging device 1 according to the first embodiment will be described. FIG. 1A is a partial top view of the solid-state imaging device 1. FIG. 1B is a cross-sectional view taken along the line I-I shown in FIG. 1A.

[0011] The solid-state imaging device 1 includes a plurality of chips (regions) 10a, 10b. In the following description, when it is not necessary to distinguish between the chip 10a and the chip 10b from each other, both are collectively referred to as the chip 10. The chip 10 is, for example, a linear image sensor. The chip 10 may be a CMOS sensor or a CCD sensor. In the present application, the solid-state imaging device 1 includes a plurality of chips 10, and for example, is a wafer including a plurality of chips that are not singulated. The user may optionally singulate the solid-state imaging device 1 into one or more chips 10.

[0012] In FIG. 1A, the chips 10a and 10b are shown as an example. Another chip (not shown) may be arranged on both sides of the chip 10a in the Y-axis direction and on the opposite side of the chip 10b in the X-axis direction. Similarly, another chip (not shown) may be arranged on both sides of the chip 10b in the Y-axis direction and on the opposite side of the chip 10a in the X-axis direction.

[0013] As shown in FIGS. 1A and 1B, the solid-state imaging device 1 includes a semiconductor substrate 2, a plurality of photodiodes 3a, 3b, photodiodes 3ae, 3be, an insulating film 4, and a light-shielding metal 5. Hereinafter, the details of each element will be described while referring to FIG. 1. In the following description, when it is not necessary to distinguish between the photodiodes 3a, 3b, 3ae, 3be from each other, these are collectively referred to as the photodiodes 3.

[0014] The semiconductor substrate 2 is a substrate made of a semiconductor such as silicon (Si) or silicon carbide (SiC). The semiconductor substrate 2 is a wafer formed by slicing an ingot, for example. The semiconductor substrate 2 may be an epitaxial layer, at least a part of a semiconductor substrate, or it may be composed of an epitaxial layer and a semiconductor substrate.

[0015] The photodiodes 3a, 3b, 3ae, and 3be are arranged in a straight line along the alignment direction (X-axis direction) on the semiconductor substrate 2. The photodiodes 3a, 3b, 3ae, and 3be receive light incident on the solid-state imaging device 1 (or chip 10) at approximately perpendicular (Z-axis direction).

[0016] Multiple photodiodes 3a are arranged within region 10a. Multiple photodiodes 3b are arranged within region 10b. Thus, the semiconductor substrate 2 has a region 10a in which multiple photodiodes 3a are arranged along the X-axis direction, and a region 10b in which multiple photodiodes 3b are arranged along the X-axis direction.

[0017] Furthermore, photodiode 3ae is the photodiode closest to region 10b among the photodiodes arranged in region 10a. Photodiode 3be is the photodiode closest to region 10a among the photodiodes arranged in region 10b. Photodiodes 3ae and 3be are examples of "edge photodiodes". Note that the arrangement of photodiodes 3a and photodiodes 3b do not have to be on the same line (for example, they may be offset in the Y-axis direction).

[0018] Furthermore, if the chip 10 is a linear image sensor, there may be no light-blocking objects such as circuits and / or wiring for the linear image sensor in the area between the photodiode 3ae and the photodiode 3be (i.e., the edge of the chip). This is because, in linear image sensors, multiple individual chips are arranged on a sensor module substrate to form a single pixel array, and the chip is positioned all the way to the edge of the chip.

[0019] The insulating film 4 is disposed on the semiconductor substrate 2 so as to cover region 10 (regions 10a and 10b). The insulating film 4 may include an anti-reflective coating. The insulating film 4 is made of, for example, silicon oxide, aluminum oxide, etc. The insulating film 4 is provided with recesses RE1 and RE2.

[0020] The recess RE1 is located in the region between photodiode 3ae and photodiode 3be (region A, described later). In Figure 1A, two recesses RE1 are shown between photodiode 3ae and photodiode 3be, but only one recess RE1 may be provided between photodiode 3ae and photodiode 3be. The recess RE1 is an example of an optical path changing section.

[0021] The recess RE1 is configured as an optical path changing section that alters the optical path of light incident on the insulating film 4 on region 10a and directed toward region 10b. As shown in Figure 1B, the depth of recess RE1 is approximately the same as the depth of recess RE2. However, it is desirable that the depth of recess RE1 be greater than or equal to the depth of recess RE2.

[0022] In Figure 1A, the recess RE1 is located inside region 10, but part or all of the recess RE1 may be located outside region 10.

[0023] The recess RE2 is provided at a position corresponding to the photodiode 3 (directly above the photodiode 3 in this embodiment) in order to suppress the variation in the photoreception sensitivity of the photodiode 3 with respect to changes in the wavelength of incident light.

[0024] Furthermore, when the solid-state imaging device 1 is used as a color sensor, a color filter may be placed on the insulating film 4, inside the insulating film 4, or between the insulating film 4 and the semiconductor substrate 2. The color filter may include, for example, a red color filter that transmits red light and attenuates other light, a green color filter that transmits green light and attenuates other light, and a blue color filter that transmits blue light and attenuates other light. In addition, the insulating film 4 may be configured to perform the function of a color filter.

[0025] The light-shielding metal 5 is placed in the insulating film 4. More specifically, the light-shielding metal 5 is placed in regions 10a and 10b, respectively. The light-shielding metal 5 in region 10a has an aperture OP at a position corresponding to the photodiodes 3a and 3ae, and shields light other than that incident on the photodiodes 3a and 3ae from the Z-axis direction. The light-shielding metal 5 in region 10b has an aperture OP at a position corresponding to the photodiodes 3b and 3be, and shields light other than that incident on the photodiodes 3b and 3be from the Z-axis direction. The light-shielding metal 5 is made of a metal such as copper or aluminum.

[0026] <Effects and Effects> Now, with reference to Figure 1C, the effects of this embodiment will be explained. Figure 1C is an enlarged view of the region between region 10a and region 10b in Figure 1B. When light L is incident on region 10a, a portion of the light L is refracted by the recess RE2 and propagates in the X-axis direction.

[0027] In this case, if the insulating film 4 does not have a recess RE1, depending on the shape of the recess RE2, light L may propagate to region 10b as shown by the dotted line and be incident on photodiode 3b (in this case, photodiode 3be). In other words, light may leak from region 10a to region 10b. In this case, more light will be incident on photodiode 3be than would normally be incident on it, and the light receiving sensitivity of photodiode 3be will be evaluated as higher than its actual value. As a result, for example, during quality control, a proper evaluation of photodiode 3be cannot be performed, and consequently, a proper (fair) evaluation of chip 10b cannot be performed.

[0028] In contrast, in this embodiment, because recess RE1 is provided, the light L refracted by recess RE2 in region 10a and propagating in the X-axis direction has its optical path altered (blocked) by recess RE1, as shown by the solid arrow, and does not propagate to region 10b. In this way, the provision of recess RE1 prevents light from leaking from region 10a to region 10b. This allows for proper evaluation of the photodiode 3be and, consequently, the chip 10b, for example, during quality control. In other words, it allows for proper quality evaluation of each chip 10. Furthermore, by making the depth of recess RE1 greater than or equal to the depth of recess RE2, light leakage from region 10a to region 10b can be prevented more effectively.

[0029] <Layout of the optical path changing section> Here, the layout conditions for the optical path changing section will be explained with reference to Figure 1D. Figure 1D is a diagram illustrating the layout conditions for the optical path changing section. The optical path changing section only needs to be provided such that, in part or in whole, it traverses the region (intermediate region) A between photodiode 3ae and photodiode 3be in the Y-axis direction. As shown in Figure 1D, region A includes sides A1 and A2, connects photodiode 3ae and photodiode 3be by the shortest distance, and is a region whose width W1 in the Y-axis direction is equal to the width W2 of photodiode 3, and does not overlap with the recess RE2. As shown in Figure 1D, sides A1 and A2 are sides that connect the Y-axis end edge of photodiode 3ae and the Y-axis end edge of photodiode 3be.

[0030] In other words, the optical path changing section only needs to include at least a portion of side A1 and at least a portion of side A2 parallel to the X-axis direction of region A, and extend from side A1 to side A2. Note that the transverse (extension) direction of the optical path changing section is not limited to being parallel to the Y-axis.

[0031] By providing an optical path changing section that satisfies the above layout conditions, it is possible to prevent, for example, light L refracted by the recess RE2 and propagating in the X-axis direction from propagating from region 10a to region 10b (or from region 10b to region 10a) (i.e., preventing light leakage to adjacent chips).

[0032] <Manufacturing method for solid-state imaging devices> Next, an example of a manufacturing method for the solid-state imaging device 1 will be described with reference to Figures 2A to 2C. Figures 2A to 2C are cross-sectional view diagrams illustrating the manufacturing process of the solid-state imaging device 1.

[0033] First, a semiconductor substrate 2 is prepared as shown in Figure 2A(1). Next, a photodiode 3 is formed on the upper surface of the semiconductor substrate 2 along the X-axis direction, as shown in Figure 2A(2). Specifically, a photodiode 3a is formed in region 10a along the X-axis direction, and a photodiode 3b is formed in region 10b along the X-axis direction.

[0034] Next, as shown in Figure 2A(3), an insulating film 4a, which will become part of the insulating film 4, is formed on the semiconductor substrate 2 so as to cover regions 10a and 10b. The insulating film 4a is formed, for example, by depositing an insulating material on the photodiode 3 by physical vapor deposition (PVD), chemical vapor deposition (CVD), etc. The insulating material is, for example, silicon oxide, aluminum oxide, etc.

[0035] Next, as shown in Figure 2A(4), a metal layer 5A is formed on the insulating film 4a by depositing a metal, for example, by vapor deposition or sputtering. The metal layer 5A is made of, for example, copper, aluminum, or the like.

[0036] Next, as shown in Figure 2B(1), a photoresist is applied to the metal layer 5A, and a resist mask R1 is formed on the metal layer 5A by selective exposure and development.

[0037] Next, as shown in Figure 2B(2), the metal layer 5A in the areas not covered by the resist mask R1 is removed by etching. This forms light-shielding metal 5 with openings OP in each region. The openings OP are formed at positions corresponding to the photodiode 3. The etching in this step is, for example, wet etching or dry etching using an etching solution. Then, as shown in Figure 2B(3), the resist mask R1 is removed, for example, using a developer.

[0038] Next, as shown in Figure 2B(4), insulating material is deposited again to embed the light-shielding metal 5, thereby forming an insulating film 4 with the light-shielding metal 5 positioned inside.

[0039] Next, as shown in Figure 2C(1), a photoresist is applied to the insulating film 4 and selectively exposed and developed to form a resist mask R2. The resist mask R2 has an aperture OP1 in region A between photodiodes 3ae and 3be, and apertures OP2 are provided at positions corresponding to photodiodes 3a, 3ae, 3b, and 3be. Aperture OP1 is provided so as to traverse region A in the Y-axis direction.

[0040] Next, as shown in Figure 2C(2), the insulating film 4 in the areas not covered by the resist mask R2 is removed by etching, for example, by wet etching using an etching solution. This forms recesses RE1 and RE2. Finally, as shown in Figure 2C(3), the resist mask R2 is removed, for example, using a developer.

[0041] The solid-state imaging device 1 according to the embodiment is manufactured through the above process. Note that the above description is merely one example of a manufacturing method for the solid-state imaging device 1, and it is possible to manufacture the solid-state imaging device 1 by other methods as well.

[0042] In the above process, recesses RE1 and RE2 are formed simultaneously, eliminating the need for a separate process to create recess RE1. Therefore, the solid-state imaging device 1 can be manufactured at low cost and with high manufacturing efficiency. However, recesses RE1 and RE2 may be formed by separate processes.

[0043] As described above, in the solid-state imaging device 1 according to this embodiment, a recess RE1 is provided in the insulating film 4 between the photodiode 3ae and the photodiode 3be. This prevents, for example, light incident on region 10a from leaking into the adjacent region 10b. This also prevents the light-receiving sensitivity of only a specific photodiode 3 within region 10b from being evaluated as excessively high. The same applies to light incident on region 10b. Therefore, according to this embodiment, quality inspection of individual chips 10 can be performed normally, and quality inspection of the entire solid-state imaging device 1 can be performed normally.

[0044] Incidentally, the optical path changing section (recess RE1) may be provided in any shape as long as the layout conditions described above are met. Below, variations 1 to 4 of this embodiment will be described. Each variation can achieve effects equivalent to or better than those of the above embodiment. Note that for variations 1 to 4, the main change is the shape (layout) of the recess RE1 when the solid-state imaging device 1 is viewed from above, so only some top views are shown, and cross-sectional views are omitted.

[0045] (Variation 1) A modified example of the first embodiment, a solid-state imaging device 1, will be described with reference to Figure 3.

[0046] Figure 3 is a partial top view of a modified example 1 of the solid-state imaging device according to the first embodiment. As shown in Figure 3, in the solid-state imaging device 1, the recess RE1 extends along the Y-axis direction. For example, the recess RE1 extends along the Y-axis direction so as to include the region from the upper end to the lower end of regions 10a and 10b. By forming the recess RE1 so broadly in the Y-axis direction, it is possible to more effectively prevent light leakage from region 10a to region 10b. In this modified example, the recess RE1 as an optical path changing section is provided perpendicular to region A, but it is not limited to this, and the recess RE1 may be provided obliquely to region A.

[0047] (Modification 2) Next, a modified example 2 of the first embodiment of the solid-state imaging device 1 will be described with reference to Figure 4. Figure 4 is a partial top view of a modified example 2 of the solid-state imaging device according to the first embodiment. As shown in Figure 4, in this modified example, the recess RE1 extends broadly along the Y-axis direction and also broadly along the X-axis direction. The recess RE1 extends broadly in the X-axis and Y-axis directions in the region between the recess RE2 provided above the photodiode 3ae and the recess RE2 provided above the photodiode 3be. This makes it possible to more effectively prevent light leakage from region 10a to region 10b.

[0048] (Variation 3) Next, a modified solid-state imaging device 1 according to Modification 3 of the first embodiment will be described with reference to Figure 5. Figure 5 is a partial top view of Modification 3 of the solid-state imaging device according to the first embodiment. As shown in Figure 5, in this modified example, multiple recesses RE1 extending in the Y-axis direction, as described in Modification Example 1, are provided in the X-axis direction (three in Figure 5). This makes it possible to more effectively prevent light leakage from region 10a to region 10b.

[0049] (Modification 4) Next, a solid-state imaging device 1 according to modification 4 of the first embodiment will be described with reference to Figure 6. Figure 6 is a partial top view of modification 4 of the solid-state imaging device according to the first embodiment. As shown in Figure 6, in this modified example, the recess RE1 is provided so as to surround region 10a. The recess RE1 may be provided in the insulating film 4 located above the light-shielding metal 5, and at a minimum, it should be provided so as to surround the plurality of photodiodes 3a, 3ae arranged in region 10a. This makes it possible to more effectively prevent light leakage from region 10a to region 10b, and to prevent light leakage from region 10a to an adjacent region in the Y-axis direction (for example, region 10c in Figure 6).

[0050] In Figure 6, three photodiodes 3 are arranged in region 10a, but the number of photodiodes 3 is not limited to this. Furthermore, recesses may be provided in other regions 10 adjacent to region 10a so as to surround the photodiodes within that region.

[0051] Furthermore, the recess RE1 having the shape (layout) described in Modifications 1 to 4 may correspond to dicing lines for dicing when the solid-state imaging device 1 is divided into multiple chips 10. This allows the recess RE1 to be used as a marker (guide) during dicing.

[0052] (Second embodiment) Next, a solid-state imaging device 1A according to the second embodiment will be described. In the first embodiment, the depth of recess RE1 was approximately the same as the depth of recess RE2. In contrast, in the second embodiment, the depth of recess RE1 reaches the semiconductor substrate 2, and the semiconductor substrate 2 is exposed at the bottom surface of recess RE1. This makes it possible to more reliably prevent light leakage from region 10a to region 10b. The second embodiment will be described below, focusing on the differences from the first embodiment.

[0053] Figure 7A is a partial top view illustrating the solid-state imaging apparatus 1A according to the second embodiment. Figure 7B is a cross-sectional view along line II in Figure 7A. Elements with the same names or functions as those described in the first embodiment are denoted by the same reference numerals. Hereafter, descriptions will be omitted except for changes or additions.

[0054] In this embodiment, as shown in Figure 7B, the recess RE1 extends to the semiconductor substrate 2. In other words, the recess RE1 is provided such that the semiconductor substrate 2 is exposed on its bottom surface.

[0055] Here, referring to Figure 7C, we will explain the effect of the recess RE1 reaching the semiconductor substrate 2. Figure 7C is an enlarged view of the region between region 10a and region 10b in Figure 7B. When light L is incident on region 10a, a portion of the light L is refracted by the recess RE2 and propagates in the X-axis direction.

[0056] In this case, depending on the shape of the recess RE2, the light L may propagate downwards. If the depth of the recess formed in region A is insufficient, the light L may propagate through the recess to region 10b and be incident on photodiode 3b (in this case, photodiode 3be). In other words, there is a possibility that light may leak from region 10a to region 10b.

[0057] In contrast, in the second embodiment, the depth of the recess RE1 extends to the semiconductor substrate 2. As a result, light L that does not enter region 10a is blocked by the recess RE1, as shown by the solid arrow, regardless of the path it takes to propagate in the X-axis direction, and does not propagate to region 10b. In this way, by extending the depth of the recess RE1 to the semiconductor substrate 2, it is possible to more effectively prevent light leakage from region 10a to region 10b. This also prevents the light reception sensitivity of only a specific photodiode 3 in an adjacent region from being evaluated as significantly higher. The same applies to light that enters region 10b. As a result, quality inspection of individual chips 10 can be performed normally, and quality inspection of the entire solid-state imaging device 1A can be performed normally.

[0058] (Third embodiment) Next, with reference to Figure 8, a solid-state imaging device 1B according to the third embodiment will be described. In the first and second embodiments, the optical path changing portion was formed by a recess, but in the third embodiment, the optical path changing portion is embedded in the insulating film 4 and is formed by a material X with a different refractive index from the insulating film 4. Material X may be, for example, silicon nitride or a material such as a light-shielding metal. This makes it possible to more reliably prevent light leakage from region 10a to region 10b.

[0059] Furthermore, material X may be embedded within the insulating film 4. In other words, material X does not need to be exposed on the surface of the insulating film 4.

[0060] In the solid-state imaging device 1B according to this embodiment, the optical path changing section is composed of an insulating film 4 and a material X with a different refractive index. This prevents, for example, light incident on region 10a from leaking into the adjacent region 10b. This also prevents the light-receiving sensitivity of only a specific photodiode 3 within region 10b from being evaluated as excessively high. The same applies to light incident on region 10b. Therefore, according to this embodiment, quality inspection of individual chips 10 can be performed normally, and quality inspection of the entire solid-state imaging device 1B can be performed normally.

[0061] While embodiments of the present invention have been described, these embodiments and examples are presented as examples only and are not intended to limit the scope of the invention. These embodiments and examples can be carried out in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and examples and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0062] 1. 1A Solid-state imaging device 2 Semiconductor substrates 3, 3a, 3ae, 3b, 3be photodiodes 4,4a insulating film 5 Light-blocking metal 10, 10a, 10b chips (areas) Area A L light OP, OP1, OP2 opening R1, R2 Resist Mask X material RE1, RE2 recessed W1, W2 width

Claims

1. A semiconductor substrate having a first region in which a plurality of first photodiodes are arranged along a first direction, and a second region in which a plurality of second photodiodes are arranged along the first direction, An insulating film disposed on the semiconductor substrate so as to cover the first region and the second region, Equipped with, The insulating film is provided with at least a first recess in an intermediate region between the first-end photodiode closest to the second region among the plurality of first photodiodes and the second-end photodiode closest to the first region among the plurality of second photodiodes, which changes the optical path of light incident on the insulating film in the first region and directed toward the second region. The insulating film is provided with a second recess above each of the plurality of first photodiodes and the plurality of second photodiodes. The depth of the first recess is the same as the depth of the second recess. Solid-state imaging device.

2. The first recess is filled with a material having a different refractive index from the insulating film. The solid-state imaging apparatus according to claim 1.

3. The solid-state imaging device is a linear image sensor, No circuitry and / or wiring for the linear image sensor is located between the first-end photodiode and the second-end photodiode. The solid-state imaging apparatus according to claim 1 or 2.

4. A step of preparing a semiconductor substrate having a first region in which a plurality of first photodiodes are arranged along a first direction, and a second region in which a plurality of second photodiodes are arranged along the first direction, A step of forming an insulating film covering the first region and the second region on the semiconductor substrate, The process of forming an optical path changing portion in the insulating film, at least in an intermediate region between the first-end photodiode closest to the second region among the plurality of first photodiodes and the second-end photodiode closest to the first region among the plurality of second photodiodes, which changes the optical path of light incident on the insulating film in the first region and directed toward the second region, Equipped with, The process of forming the optical path changing section is as follows: A step of forming a resist on the insulating film, wherein a first aperture is provided in the intermediate region, and second apertures are provided at positions corresponding to the plurality of first photodiodes and the plurality of second photodiodes, respectively. Using the resist as a mask, the insulating film is etched to form a first recess at a position corresponding to the first opening, and a second recess at a position corresponding to the second opening. A method for manufacturing a solid-state imaging device, comprising the above.

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