Manufacturing method for nitride semiconductor devices

By using a crystalline nitride semiconductor protective film and ammonia-containing atmosphere during heat treatment, the method addresses poor bonding issues at the interface, maintaining semiconductor integrity and preventing surface degradation.

JP7893163B2Active Publication Date: 2026-07-22KK TOYOTA CHUO KENKYUSHO
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
KK TOYOTA CHUO KENKYUSHO
Filing Date
2023-02-17
Publication Date
2026-07-22

AI Technical Summary

Technical Problem

The interface between the nitride semiconductor layer and the protective film in existing manufacturing processes has poor bonding, leading to nitrogen escape and pit formation during high-temperature heat treatment, which degrades the semiconductor quality.

Method used

Forming a crystalline nitride semiconductor protective film on the nitride semiconductor layer and conducting the heat treatment in an ammonia-containing gas atmosphere to maintain strong bonding and supply nitrogen, thereby suppressing decomposition and pit formation.

Benefits of technology

The method enhances interface quality, preventing nitrogen leakage and pit formation, ensuring a stable and high-quality nitride semiconductor surface.

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Patent Text Reader

Abstract

To provide a technology to suppress the formation of pits on the top surface of nitride semiconductor layers during the heat treatment process.SOLUTION: A method for manufacturing a nitride semiconductor device comprises: a protective film deposition process, in which a protective film is deposited on the nitride semiconductor layer by crystal growth; and a heat treatment process in which the nitride semiconductor layer is heat treated with a protective film deposited, and the heat treatment process is performed in an ammonia-containing gas atmosphere, and the protective film is a crystalline nitride semiconductor.SELECTED DRAWING: Figure 1
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