Manufacturing equipment for light-emitting devices

Abstract

Provided is a light-emitting device manufacturing apparatus capable of continuously carrying out the steps from formation to sealing of a light-emitting element. This light-emitting device manufacturing apparatus is capable of forming a minute organic EL device having high luminance and high reliability, said manufacturing apparatus being capable of continuously carrying out a film formation step for forming an organic EL device, a lithography step, an etching step, and a sealing step by means of the formation of a protective layer in said order. In addition, the manufacturing apparatus is of an in-line type in which devices are arranged in the order of the manufacturing steps of the light-emitting device, and is capable of carrying out the manufacturing with high throughput.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a manufacturing apparatus and method for a light-emitting device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods of operating them, or methods of manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for higher resolution display panels. Examples of devices requiring high-resolution display panels include smartphones, tablet devices, and notebook computers. Furthermore, stationary display devices such as television sets and monitors also require higher resolution and greater detail. Among the devices demanding the highest resolution are those used for virtual reality (VR) and augmented reality (AR).

[0004] Furthermore, typical examples of display devices applicable to display panels include liquid crystal displays, light-emitting devices equipped with light-emitting elements such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs), and electronic paper that displays information using electrophoretic methods.

[0005] For example, an organic EL element has a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be obtained from the light-emitting organic compound. Because a display device using such an organic EL element does not require a backlight, which is necessary for liquid crystal displays and the like, it is possible to realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2002-324673 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] In organic EL display devices capable of full-color display, configurations are known that combine a white light-emitting element and a color filter, and configurations in which RGB light-emitting elements are formed on the same surface.

[0008] In terms of power consumption, the latter configuration is ideal, and currently, in the manufacturing of small and medium-sized panels, the light-emitting material is applied using metal masks. However, the process using metal masks has low alignment accuracy, so the area occupied by the light-emitting element within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks have challenges in increasing pixel density or luminescence intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting element using a lithography process or the like. However, since the reliability of the materials constituting the light-emitting element deteriorates due to the intrusion of impurities from the atmosphere (water, oxygen, hydrogen, etc.), it is necessary to carry out multiple processes in a controlled atmosphere.

[0010] Alternatively, when fabricating light-emitting devices using a vacuum deposition method with a metal mask, there is a challenge in that multiple manufacturing lines are required. For example, since the metal mask needs to be cleaned periodically, at least two or more manufacturing lines must be prepared, and while one manufacturing line is being maintained, the other must be used for manufacturing. Therefore, when considering mass production, multiple manufacturing lines are required. Consequently, there is a challenge in that the initial investment required to introduce the manufacturing equipment is very large.

[0011] Furthermore, there is a demand for small, high-resolution displays for AR and VR applications. Since displays for AR and VR applications are installed in devices such as glasses or goggles that have a small volume, a narrow bezel is preferable. Therefore, it is preferable to place the pixel circuit drivers and the like below the pixel circuit.

[0012] Therefore, one aspect of the present invention aims to provide a manufacturing apparatus for a light-emitting device that can continuously perform the processes from the formation of a light-emitting element to sealing without exposure to the atmosphere. Alternatively, one aspect of the present invention aims to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask. Alternatively, one aspect of the present invention aims to provide a method for manufacturing a light-emitting device.

[0013] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0014] One aspect of the present invention relates to an apparatus for manufacturing light-emitting devices.

[0015] A first aspect of the present invention comprises first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, and the fifth cluster is connected to the sixth cluster via the tenth The 6th cluster is connected via the 5th load lock room, the 7th cluster is connected via the 7th load lock room, the 7th cluster is connected via the 8th cluster is connected via the 7th load lock room, the 8th cluster is connected via the 9th cluster is connected via the 8th load lock room, the 9th cluster is connected via the 10th cluster is connected via the 11th cluster is connected via the 10th load lock room, and the 1st class The third, fourth, sixth, seventh, ninth, and eleventh clusters are controlled under reduced pressure, the second, fifth, eighth, and tenth clusters are controlled under an inert gas atmosphere, the first, fourth, and seventh clusters each have a first transport device and a plurality of film deposition devices, the third, sixth, and ninth clusters each have a second transport device, an etching device, and an ashing device, the second, fifth, and eighth clusters each have a third transport device and a plurality of devices for performing a lithography process, the tenth cluster has a fourth transport device and an etching device, and the eleventh cluster has a fifth transport device and a plurality of film deposition devices. The first transport device is a light-emitting device manufacturing apparatus that has a part for fixing the substrate and can invert the substrate by rotating the part.

[0016] A second aspect of the present invention comprises first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, the fifth cluster is connected to the sixth cluster via the fifth load lock chamber, and the sixth cluster is connected to the seventh The cluster is connected to the sixth load lock chamber, the seventh cluster is connected to the eighth cluster and the seventh load lock chamber, the eighth cluster is connected to the ninth cluster and the eighth load lock chamber, the ninth cluster is connected to the tenth cluster and the ninth load lock chamber, the tenth cluster is connected to the eleventh cluster and the tenth load lock chamber, and the first, third, fourth, sixth, seventh, ninth, and eleventh clusters are controlled to reduce pressure. The second, fifth, eighth, and tenth clusters are controlled to an inert gas atmosphere, the first, fourth, and seventh clusters each have a first transport device, a substrate transfer device, and a plurality of film deposition devices, the third, sixth, and ninth clusters each have a second transport device, an etching device, and an ashing device, and the second, fifth, and eighth clusters each have a third transport device and a plurality of devices for performing the lithography process. The tenth cluster comprises a fourth transport device and an etching device, the eleventh cluster comprises a fifth transport device and a plurality of film deposition devices, the substrate transfer device comprises a stage, a sixth transport device and a seventh transport device, a mask jig can be placed on the stage, the first transport device can transport a mask jig with a substrate mounted on it, the sixth transport device can mount a substrate onto the mask jig inverted, and the seventh transport device can remove a substrate mounted on the mask jig and invert it, making it a manufacturing apparatus.

[0017] In a second aspect of the present invention, a substrate transfer device is provided with a camera, and a sixth transfer device is provided with a substrate rotation mechanism. The substrate can be aligned and mounted on a mask jig by using the camera and the substrate rotation mechanism.

[0018] In a second aspect of the present invention, a plurality of substrates can be mounted on the mask jig.

[0019] In the first and second aspects of the present invention, there are a twelfth cluster and an eleventh load lock chamber. The twelfth cluster is connected to the first cluster through the eleventh load lock chamber. The twelfth cluster is controlled to an inert gas atmosphere, and the twelfth cluster can have a cleaning device and a baking device.

[0020] Also, the twelfth cluster can have a load chamber, and the eleventh cluster can have an unload chamber.

[0021] Furthermore, there are a thirteenth cluster, a fourteenth cluster, a twelfth load lock chamber, and a thirteenth load lock chamber. The thirteenth cluster is connected to the third cluster through the third load lock chamber, and the thirteenth cluster is connected to the fourth cluster through the twelfth load lock chamber. The fourteenth cluster is connected to the sixth cluster through the sixth load lock chamber, and the fourteenth cluster is connected to the seventh cluster through the thirteenth load lock chamber. The thirteenth and fourteenth clusters are controlled to an inert gas atmosphere, and the thirteenth and fourteenth clusters may have a cleaning device and a baking device.

[0022] The film forming apparatus is preferably one or more selected from an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.

[0023] The etching apparatuses included in the third cluster, the sixth cluster, and the ninth cluster are preferably dry etching apparatuses.

[0024] The etching apparatus of the 10th cluster is preferably a wet etching apparatus.

[0025] The lithography process can be carried out using multiple devices, including a coating device, an exposure device, a developing device, and a baking device. Alternatively, the lithography process can be carried out using multiple devices, including a coating device and a nanoimprint device.

[0026] A silicon wafer can be used as the substrate. In addition, each film deposition apparatus is equipped with an alignment mechanism and a mask jig, and the alignment mechanism can bring the substrate and the mask jig into close contact. [Effects of the Invention]

[0027] By using one aspect of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform the processes from the formation of a light-emitting element to sealing without exposure to the atmosphere. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask. Alternatively, it is possible to provide a method for manufacturing a light-emitting device.

[0028] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0029] Figure 1 is a block diagram illustrating the manufacturing equipment. Figure 2 is a diagram illustrating the manufacturing equipment. Figure 3 is a diagram illustrating the manufacturing equipment. Figure 4 is a diagram illustrating the manufacturing equipment. Figure 5 is a diagram illustrating the manufacturing equipment. Figure 6 is a block diagram illustrating the manufacturing equipment. Figure 7 is a diagram illustrating the manufacturing equipment. Figure 8 is a diagram illustrating the manufacturing equipment. Figure 9 is a block diagram illustrating the manufacturing equipment. Figure 10 is a diagram illustrating the manufacturing equipment. Figure 11 is a diagram illustrating the manufacturing equipment. Figures 12A to 12C illustrate the transport of the substrate. Figures 13A to 13C illustrate the transport of the substrate. Figure 14A is a diagram illustrating a vacuum processing apparatus. Figure 14B is a diagram illustrating the loading of a substrate into the vacuum processing apparatus. Figures 15A to 15C show an example of the number of display devices per substrate. Figure 16 is a block diagram illustrating the manufacturing equipment. Figure 17 is a diagram illustrating the manufacturing equipment. Figure 18 is a diagram illustrating the manufacturing equipment. Figure 19 is a diagram illustrating the manufacturing equipment. Figure 20 is a diagram illustrating the manufacturing equipment. Figure 21 is a block diagram illustrating the manufacturing equipment. Figure 22 is a diagram illustrating the manufacturing equipment. Figure 23 is a diagram illustrating the manufacturing equipment. Figures 24A to 24C illustrate the transport of the substrate. Figures 25A to 25C illustrate the transport of the substrate. Figures 26A and 26B illustrate the transport of the substrate. Figure 27A is a diagram illustrating the cross-section of the conveying device and the mask jig. Figure 27B is a diagram illustrating the cross-section of the mask jig. Figures 27C and 27D are diagrams illustrating the mask jig. Figure 28A is a diagram illustrating a vacuum processing apparatus. Figure 28B is a diagram illustrating a cooling plate. Figure 28C is a diagram illustrating a cross-section of a cooling plate. Figure 29 is a diagram illustrating a display device. Figures 30A to 30C illustrate the display device. Figures 31A to 31D illustrate the method for manufacturing a display device. Figures 32A to 32D illustrate the method for manufacturing a display device. Figures 33A to 33E illustrate the method for manufacturing a display device. Figure 34 is a diagram illustrating the manufacturing equipment. Figure 35 is a diagram illustrating the manufacturing equipment. [Modes for carrying out the invention]

[0030] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the invention. Therefore, the present invention is not to be interpreted as being limited to the descriptions of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated descriptions may be omitted. In addition, hatching of the same elements constituting the figures may be omitted or changed as appropriate between different drawings.

[0031] (Embodiment 1) In this embodiment, a manufacturing apparatus for a light-emitting device, which is one aspect of the present invention, will be described with reference to the drawings.

[0032] One aspect of the present invention is a manufacturing apparatus mainly used for forming display devices having light-emitting elements (also called light-emitting devices) such as organic EL elements. To miniaturize organic EL elements or increase the occupied area in pixels, it is preferable to use a lithography process. However, if impurities such as water, oxygen, and hydrogen enter the organic EL element, its reliability will be compromised. Therefore, it is necessary to take measures such as controlling the atmosphere to have a low dew point from the manufacturing stage so that the surface and sides of the patterned organic layer are not exposed to the atmosphere.

[0033] A manufacturing apparatus according to one embodiment of the present invention can continuously perform the film deposition process, lithography process, etching process, and encapsulation process for forming an organic EL element without exposure to the atmosphere. Therefore, it is possible to form a fine, high-brightness, and highly reliable organic EL element. Furthermore, the apparatus is an in-line type with the equipment arranged in the order of the light-emitting device processes, enabling high-throughput manufacturing.

[0034] Furthermore, a silicon wafer can be used as a support substrate for forming organic EL elements. By using a silicon wafer with pre-formed drive circuits and pixel circuits as a support substrate, organic EL elements can be formed on these circuits. Therefore, a narrow-bezel display device suitable for AR or VR can be formed. The silicon wafer is preferably φ8 inches or larger (for example, φ12 inches).

[0035] <Configuration Example 1> Figure 1 is a block diagram illustrating a manufacturing apparatus for a light-emitting device according to one aspect of the present invention. The manufacturing apparatus has multiple clusters arranged in a process order. In this specification, a group of devices that share transport equipment, etc., is referred to as a cluster. The substrate on which the light-emitting device is formed moves sequentially through the clusters to undergo each process.

[0036] The manufacturing apparatus shown in Figure 1 is an example having clusters C1 to C14. Clusters C1 to C14 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C14 as a substrate 60b on which a light-emitting device has been formed.

[0037] Here, clusters C1, C3, C5, C7, C9, C11, and C13 contain equipment for performing processes under controlled atmosphere. Clusters C2, C4, C6, C10, C12, and C14 contain equipment for performing vacuum processes (reduced pressure processes).

[0038] Clusters C1, C5, and C9 mainly contain equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly contain equipment for forming organic compounds for light-emitting devices. Clusters C3, C7, and C11 mainly contain equipment for performing lithography processes. Clusters C4, C8, and C12 mainly contain equipment for performing etching and ashing processes. Cluster C13 contains equipment for etching and cleaning substrates. Cluster C14 mainly contains equipment for forming organic compounds for light-emitting devices and equipment for forming protective films to seal light-emitting devices.

[0039] Next, we will explain the details of clusters C1 to C14 using Figures 2 to 5.

[0040] <Cluster C1 to Cluster C4> Figure 2 is a top view illustrating clusters C1 through C4. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 (see Figure 3) via load lock chamber B4.

[0041] <Atmospheric pressure processing equipment A> Clusters C1 and C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly perform processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 is also provided with a load chamber LD.

[0042] The number of atmospheric pressure process units A in each cluster may be one or more, depending on the purpose. Furthermore, atmospheric pressure process units A may not be limited to processes under atmospheric pressure, but may be controlled to a slightly negative or positive pressure than atmospheric pressure. Also, if multiple atmospheric pressure process units A are provided, the atmospheric pressure may differ for each.

[0043] Valves for introducing inert gas (IG) are connected to transfer chambers TF1 and TF3 and atmospheric pressure process apparatus A, allowing the atmosphere to be controlled to an inert gas environment. Nitrogen, or noble gases such as argon or helium can be used as the inert gas. Furthermore, it is preferable that the inert gas has a low dew point (e.g., below -50°C). Performing the process under a low-dew-point inert gas atmosphere prevents the inclusion of impurities, enabling the formation of highly reliable organic EL elements.

[0044] The atmospheric pressure process apparatus A in cluster C1 can be a cleaning apparatus, a baking apparatus, or the like. For example, a spin cleaning apparatus or a hot plate type baking apparatus can be used. The baking apparatus may also be a vacuum baking apparatus.

[0045] The atmospheric pressure process apparatus A in cluster C3 can be an apparatus for performing lithography processes. For example, when performing a photolithography process, a resin (photoresist) coating apparatus, exposure apparatus, developing apparatus, baking apparatus, etc., can be used. When performing a nanoimprint lithography process, a resin (UV-curing resin, etc.) coating apparatus, nanoimprint apparatus, etc., can be used. In addition, depending on the application, a cleaning apparatus, wet etching apparatus, coating apparatus, resist stripping apparatus, etc., may be applied to atmospheric pressure process apparatus A.

[0046] Cluster C1 shows an example where atmospheric pressure process units A1 and A2 are each connected to transfer chamber TF1 via gate valves. Cluster C3 shows an example where atmospheric pressure process units A3 through A7 are each connected to transfer chamber TF3 via gate valves. By providing gate valves, it is possible to control pressure, inert gas species, and prevent cross-contamination.

[0047] The transfer chamber TF1 is connected to the load chamber via a gate valve. It is also connected to the load lock chamber B1 via another gate valve. A transport device 70a is provided in the transfer chamber TF1. The transport device 70a can transport substrates from the load chamber LD to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B1.

[0048] The transfer chamber TF3 is connected to the load lock chamber B2 via a gate valve. It is also connected to the load lock chamber B3 via another gate valve. A transport device 70b is provided in the transfer chamber TF3. The transport device 70b can transport substrates from the load lock chamber B2 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B3.

[0049] <Vacuum Processing Equipment V> Clusters C2 and C4 have vacuum process equipment V. Cluster C2 has a transfer chamber TF2 and vacuum process equipment V (vacuum process equipment V1 to V4). Cluster C4 has a transfer chamber TF4 and vacuum process equipment V (vacuum process equipment V5, V6).

[0050] The number of vacuum process units V in each cluster can be one or more, depending on the purpose. A vacuum pump VP is connected to the vacuum process unit V, and gate valves are provided between it and the transfer chambers TF (transfer chambers TF2, TF4). Therefore, different processes can be performed in parallel in each vacuum process unit V.

[0051] Furthermore, a vacuum process refers to processing in a controlled environment under reduced pressure. Therefore, vacuum processes include not only processing under high vacuum but also processing that involves introducing a process gas and controlling the pressure under reduced pressure.

[0052] Independent vacuum pumps VP are also provided in the transfer chambers TF2 and TF4, which prevents cross-contamination during the process carried out in the vacuum process apparatus V.

[0053] The vacuum process equipment V in cluster C2 can include, for example, film deposition equipment such as a vapor deposition system, a sputtering system, a CVD (Chemical Vapor Deposition) system, and an ALD (Atomic Layer Deposition) system. For the CVD system, a thermal CVD system utilizing heat or a PECVD system (Plasma Enhanced CVD system) utilizing plasma can be used. Similarly, for the ALD system, a thermal ALD system utilizing heat or a PEALD system (Plasma Enhanced ALD system) utilizing plasma-excited reactant can be used.

[0054] For example, the vacuum process equipment V in cluster C4 can be a dry etching apparatus, an ashing apparatus, or the like.

[0055] The transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve. It is also connected to the load lock chamber B2 via another gate valve. A transport device 71a is provided in the transfer chamber TF2. The transport device 71a can invert the substrate placed in the load lock chamber B1 and transport it to the vacuum process apparatus V. It can also invert the substrate removed from the vacuum process apparatus V and transport it to the load lock chamber B2.

[0056] The transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve. It is also connected to the load lock chamber B4 via another gate valve. The transfer chamber TF4 is equipped with a conveying device 70c. The conveying device 70c can convey materials from the load lock chamber B3 to the vacuum process apparatus V and then to the load lock chamber B4.

[0057] Load lock chambers B1, B2, B3, and B4 are equipped with a vacuum pump VP and valves for introducing inert gas. Therefore, load lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when transporting a substrate from cluster C2 to cluster C3, the substrate can be loaded into load lock chamber B2 under reduced pressure, and then the substrate can be unloaded into cluster C3 after the load lock chamber B2 is changed to an inert gas atmosphere.

[0058] The transport devices 70a, 70b, and 70c have a mechanism for transporting substrates by placing them on the hand portion. Since the transport devices 70b and 70c operate under normal pressure, a vacuum suction mechanism or the like may be provided on the hand portion. The transport device 71a has a mechanism for transporting substrates fixed to the hand portion. Since the transport device 71a operates under reduced pressure, a fixing method such as an electrostatic suction mechanism can be used.

[0059] As described above, the transport devices 70a, 70b, and 70c have different configurations from the transport device 71a. Therefore, in load lock chambers B1 and B2, stages 80a and 80b are provided that allow the substrate to be placed on the pins. In addition, in load lock chambers B3 and B4, stages 81a and 81b are provided that allow the substrate to be placed on the surface. Note that these are just examples, and stages with other configurations may be used. Details of the transfer of substrates in load lock chamber B1 will be described later.

[0060] <Cluster C5 to Cluster C8> Figure 3 is a top view illustrating clusters C5 through C8. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see Figure 4) via load lock chamber B8.

[0061] The basic configuration of clusters C5 through C8 is the same as that of clusters C1 through C4, with cluster C5 corresponding to cluster C1, cluster C6 to cluster C2, cluster C7 to cluster C3, and cluster C8 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B4 in cluster C5.

[0062] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0063] The following only describes the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0064] Clusters C5 and C7 each have atmospheric pressure process equipment A. Cluster C5 has a transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly perform processes under atmospheric pressure. Cluster C7 has a transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0065] The transfer chamber TF5 is connected to the load lock chamber B4 via a gate valve. It is also connected to the load lock chamber B5 via another gate valve. A transport device 70d is provided in the transfer chamber TF5. The transport device 70d can transport substrates from the load lock chamber B4 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B5.

[0066] Furthermore, the transfer chamber TF7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70e is provided in the transfer chamber TF7. The transport device 70d can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0067] Clusters C6 and C8 have vacuum processing equipment V. Cluster C6 has a transfer chamber TF6 and vacuum processing equipment V (vacuum processing equipment V7 to V10). Cluster C8 has a transfer chamber TF8 and vacuum processing equipment V (vacuum processing equipment V11, V12).

[0068] The transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. The transfer chamber TF6 is equipped with a transport device 71b. The transport device 71b can invert substrates placed in the load lock chamber B5 and transport them to the vacuum process apparatus V. It can also invert substrates removed from the vacuum process apparatus V and transport them back to the load lock chamber B6.

[0069] The transfer chamber TF8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B8 via another gate valve. The transfer chamber TF8 is equipped with a transport device 70f. The transport device 70f can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B8.

[0070] In load lock chambers B5 and B6, stages 80c and 80d are provided, allowing the circuit board to be placed on the pins. In load lock chambers B7 and B8, stages 81c and 81d are provided, allowing the circuit board to be placed on the surface.

[0071] <Cluster C9 to Cluster C12> Figure 4 is a top view illustrating clusters C9 through C12. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see Figure 5) via load lock chamber B12.

[0072] The basic configuration of clusters C9 through C12 is the same as that of clusters C1 through C4, with cluster C9 corresponding to cluster C1, cluster C10 to cluster C2, cluster C11 to cluster C3, and cluster C12 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B8 in cluster C9.

[0073] Additionally, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0074] The following only describes the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0075] Clusters C9 and C11 have atmospheric pressure process equipment A. Cluster C9 has a transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly perform processes under atmospheric pressure. Cluster C11 has a transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0076] The transfer chamber TF9 is connected to the load lock chamber B8 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70g is provided in the transfer chamber TF9. The transport device 70g can transport substrates from the load lock chamber B8 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B9.

[0077] Furthermore, the transfer chamber TF11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transport device 70h is provided in the transfer chamber TF11. The transport device 70h can transport substrates from the load lock chamber B10 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B11.

[0078] Clusters C10 and C12 have vacuum process equipment V. Cluster C10 has a transfer chamber TF10 and vacuum process equipment V (vacuum process equipment V13 to V16). Cluster C12 has a transfer chamber TF12 and vacuum process equipment V (vacuum process equipment V17, V18).

[0079] The transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. The transfer chamber TF10 is equipped with a transport device 71c. The transport device 71c can invert the substrates placed in the load lock chamber B9 and transport them to the vacuum process apparatus V. It can also invert the substrates removed from the vacuum process apparatus V and transport them back to the load lock chamber B10.

[0080] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transport device 70i is provided in the transfer chamber TF12. The transport device 70i can transport substrates from the load lock chamber B11 to the vacuum process apparatus V and then to the load lock chamber B12.

[0081] In load lock chambers B9 and B10, stages 80e and 80f are provided, allowing the circuit board to be placed on the pins. In addition, in load lock chambers B11 and B12, stages 81e and 81f are provided, allowing the circuit board to be placed on the surface.

[0082] <Clusters C13, C14> Figure 5 is a top view illustrating clusters C13 and C14. Cluster C13 is connected to cluster C14 via load lock chamber B13. Explanations common to clusters C1, C2, etc., are omitted.

[0083] Cluster C13 has atmospheric pressure process equipment A. Cluster C13 has a transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22, A23) which mainly perform processes under atmospheric pressure.

[0084] The atmospheric pressure process apparatus A in cluster C13 can be an etching apparatus, a bake apparatus, or the like. For example, it could be a wet etching apparatus or a hot plate type bake apparatus. The bake apparatus may also be a vacuum bake apparatus.

[0085] The transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transport device 70j is provided in the transfer chamber TF13. The transport device 70j can transport substrates from the load lock chamber B12 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B13.

[0086] The vacuum process equipment V in cluster C14 can include, for example, deposition equipment such as evaporation equipment, sputtering equipment, CVD equipment, ALD equipment, and opposing substrate bonding equipment.

[0087] The load lock chamber B13 is equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.

[0088] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transport device 70k is provided in the transfer chamber TF14. The transport device 70k can transport substrates from the load lock chamber B13 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the unload chamber ULD.

[0089] By using a manufacturing apparatus with the above configuration, a highly reliable light-emitting device sealed with a protective film can be formed.

[0090] For example, a continuous process can be carried out in an atmosphere-controlled apparatus, from forming organic EL elements that emit a first color of light in clusters C1 to C4, forming organic EL elements that emit a second color of light in clusters C5 to C8, forming organic EL elements that emit a third color of light in clusters C9 to C12, removing unwanted elements in cluster C13, and forming a protective film in cluster C14. Details of these processes will be described later.

[0091] <Configuration Example 2> Figure 6 is a block diagram illustrating a manufacturing apparatus for a light-emitting device different from that shown in Figure 1. The manufacturing apparatus shown in Figure 6 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 1. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C14 as a substrate 60b on which a light-emitting device has been formed.

[0092] In the manufacturing apparatus shown in Figure 1, clusters C5 and C9 have a cleaning device and a baking device. The processes preceding the cleaning process are etching (dry etching) and ashing. If residual gas components, residues, and deposits from these processes do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, it becomes unnecessary to consider residual moisture in the substrate, and therefore the baking process can also be omitted. Accordingly, in some cases, the configuration shown in Figure 6 may be obtained by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 1. By omitting clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.

[0093] <Cluster C1 to Cluster C4> The configuration of clusters C1 through C4 can be the same as the configuration shown in Figure 2. However, load lock room B4 is connected to cluster C6.

[0094] <Clusters C6, C7, C8, C10> Figure 7 is a top view illustrating clusters C6, C7, C8, and C10. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see Figure 8) via load lock chamber B10.

[0095] The following describes the configuration of connections between clusters. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C6, C7, C8, and C10, and load lock rooms B4, B7, B9, and B10 mentioned above.

[0096] The transfer chamber TF6 of cluster C6 is connected to the load lock chamber B4 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. A transport device 71b is provided in the transfer chamber TF6. The transport device 71b can invert substrates placed in the load lock chamber B4 and transport them to the vacuum process apparatus V. It can also invert substrates removed from the vacuum process apparatus V and transport them to the load lock chamber B6.

[0097] The transfer chamber TF7 of cluster C7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70e is provided in the transfer chamber TF7. The transport device 70e can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0098] The transfer chamber TF8 of cluster C8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70f is provided in the transfer chamber TF8. The transport device 70f can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B9.

[0099] The transfer chamber TF10 of cluster C10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. A transport device 71c is provided in the transfer chamber TF10. The transport device 71c can invert substrates placed in the load lock chamber B9 and transport them to the vacuum process apparatus V. It can also invert substrates removed from the vacuum process apparatus V and transport them back to the load lock chamber B10.

[0100] <Clusters C11, C12, C13, C14> Figure 8 is a top view illustrating clusters C11, C12, C13, and C14. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 via load lock chamber B12. Cluster C13 is connected to cluster C14 via load lock chamber B13.

[0101] The following describes the configuration of connections between clusters. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C11, C12, C13, and C14, and load lock rooms B11, B12, and B13 mentioned above.

[0102] The transfer chamber TF11 of cluster C11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transport device 70h is provided in the transfer chamber TF6. The transport device 70h can transport substrates from the load lock chamber B10 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B11.

[0103] The transfer chamber TF12 of cluster C12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transport device 70i is provided in the transfer chamber TF12. The transport device 70i can transport substrates from the load lock chamber B11 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B12.

[0104] The transfer chamber TF13 of cluster C13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transport device 70j is provided in the transfer chamber TF13. The transport device 70j can transport substrates from the load lock chamber B12 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B13.

[0105] The transfer chamber TF14 of cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transport device 70k is provided in the transfer chamber TF13. The transport device 70k can transport substrates from the load lock chamber B13 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the unload chamber ULD.

[0106] <Configuration Example 3> Figure 9 is a block diagram showing a modified example of the manufacturing apparatus for the light-emitting device shown in Figure 6. In the manufacturing apparatus shown in Figure 9, clusters C4 and C6 are combined into one cluster, and clusters C8 and C10 are combined into another cluster. These combined clusters are named cluster C4+C6 and cluster C8+C10.

[0107] In the manufacturing apparatus shown in Figure 6, cluster C4 is connected to cluster C6 via load lock chamber B4. That is, substrates are transported from cluster C4 to cluster C6 to carry out the process.

[0108] Here, clusters C4 and C6 are both clusters that have vacuum process equipment V. Although there is an upper limit to the number of vacuum process equipment that can be connected to the transfer chamber, clusters C4 and C6 can be merged as long as the number of vacuum process equipment V in each cluster is below this limit. The same applies to clusters C8 and C10. By merging clusters C4 and C6, the total number of clusters and the number of load lock chambers can be reduced.

[0109] <Clusters C1, C2, C3, C4+C6> Figure 10 is a top view illustrating clusters C1, C2, C3, and C4+C6. The connection configuration of clusters C1 to C3 is the same as that shown in Figure 2. Cluster C3 is connected to cluster C4+C6 via load lock chamber B5. Cluster C4+C6 is connected to cluster C7 (see Figure 11) via load lock chamber B6.

[0110] Cluster C4+C6 includes a transfer chamber TF46 and a vacuum process apparatus V. Vacuum process apparatus V (Vacuum process apparatuses V5 to V10) can include, for example, a vapor deposition apparatus, sputtering apparatus, CVD apparatus, ALD apparatus, etching apparatus, ashing apparatus, etc.

[0111] Load lock chambers B5 and B6 are equipped with a vacuum pump VP and valves for introducing inert gas. Therefore, load lock chambers B5 and B6 can be controlled to a reduced pressure or inert gas atmosphere.

[0112] The transfer chamber TF46 is connected to the load lock chamber B5 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. A transport device 71b is provided in the transfer chamber TF46. The transport device 71b can transport substrates from the load lock chamber B5 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B6.

[0113] <Clusters C7, C8 + C10, C11, C12> Figure 11 is a top view illustrating clusters C7, C8+C10, C11, and C12. The connection configuration of clusters C11 and C12 is the same as that shown in Figure 4. Cluster C7 is connected to cluster C8+C10 via load lock chamber B9. Cluster C8+C10 is connected to cluster C11 via load lock chamber B10.

[0114] Cluster C8+C10 includes a transfer chamber TF810 and a vacuum process apparatus V. Examples of vacuum process apparatus V (vacuum process apparatuses V11 to V16) include a deposition apparatus, sputtering apparatus, CVD apparatus, ALD apparatus, etching apparatus, ashing apparatus, etc.

[0115] Load lock chambers B9 and B10 are equipped with a vacuum pump VP and valves for introducing inert gas. Therefore, load lock chambers B9 and B10 can be controlled to a reduced pressure or inert gas atmosphere.

[0116] The transfer chamber TF810 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. The transfer chamber TF810 is equipped with a transport device 71c. The transport device 71c can transport substrates from the load lock chamber B9 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B10.

[0117] <Clusters C13, C14> The configuration of clusters C13 and C14 can be the same as the configuration shown in Figure 5.

[0118] <Plate transport operation> Next, the operation of transporting substrates from cluster C1 to cluster C2 will be explained using a diagram. Note that the substrate transport operation between other clusters having a similar configuration to cluster C1 and other clusters having a similar configuration to cluster C2 can be carried out in the same manner as described below.

[0119] Figure 12A shows the transport device 70a in cluster C1, the stage 80a in load lock chamber B1, and the transport device 71a in cluster C2. For clarity, the chamber walls and gate valves, etc., are omitted from the illustration.

[0120] The transport device 70a has a lifting mechanism 91, an arm 92, and a hand portion 93. The hand portion 93 has a plane with a notch, on which a substrate can be placed. Since cluster C1 is a cluster having an atmospheric pressure process apparatus A, the hand portion 93 may be provided with a vacuum adsorption mechanism or the like. Alternatively, an electrostatic adsorption mechanism may be provided.

[0121] The transport device 71a includes a lifting mechanism 94, an arm 95, and a substrate fixing part 96. The substrate fixing part 96 has a plane for holding the substrate 60 and is smaller in size than the width of the notch of the hand part 93 of the transport device 70a. Since cluster C1 is a cluster having a vacuum process apparatus V, it is preferable to provide an electrostatic adsorption mechanism in the substrate fixing part 96. The transport device 71a also has a substrate inversion mechanism, which will be described later.

[0122] The stage 80a has pins 82 on which the circuit board 60 is placed. The first length connecting two pins 82 (length not including the diameter of the pins 82) is larger than the width of the circuit board fixing portion 96. The second length connecting the two pins 82 (length including the diameter of the pins 82) is smaller than the width of the cutout portion of the hand portion 93. Note that a configuration without pins is also possible, as long as the circuit board 60 is stably fixed and does not interfere with the circuit board fixing portion 96 on the back side of the circuit board 60. Note that the stage 80a may be provided with a lifting mechanism.

[0123] First, the substrate 60 held by the hand section 93 of the transport device 70a is transported to the stage 80a (see Figure 12B), then lowered by the lifting mechanism 91, and the substrate 60 is placed on the pins 82 (see Figure 12C).

[0124] Next, the substrate fixing part 96 of the transport device 71a is inserted between the pins 82 of the stage 80a with the substrate fixing part 96 facing upward, and the arm 95 is raised to fix the back surface of the substrate 60 to the substrate fixing part 96 (see Figure 13A).

[0125] Next, the arm 95 is raised further, and the substrate 60 is transported into the cluster C1 through the extension, retraction, and rotation movements of the arm 95 (see Figure 13B).

[0126] Then, a rotating mechanism 97 provided between the substrate fixing part 96 and the arm 95 inverts the substrate 60 while it remains fixed to the substrate fixing part 96 (see Figure 13C). The inverted substrate 60 can then be transported into a film deposition apparatus or the like, which installs the substrate using a face-down method.

[0127] Figure 14A illustrates a vacuum process apparatus V for mounting substrates using a face-down method, with a film deposition apparatus 30 shown as an example. For clarity, the diagram shows the view through the chamber wall, and the gate valve is omitted.

[0128] The film deposition apparatus 30 includes a film deposition material supply unit 31, a mask jig 32, and a substrate alignment unit 33. The film deposition material supply unit 31 is the part where the deposition source is installed if the film deposition apparatus 30 is a vapor deposition apparatus. If the film deposition apparatus 30 is a sputtering apparatus, it is the part where the target (cathode) is installed.

[0129] As shown in Figure 14B, the substrate 60 can be loaded into the substrate alignment section 33 in an inverted state. A mask jig 32 is installed below the substrate alignment section 33. Circuits and the like are pre-formed on the surface of the substrate 60, and the substrate 60 and the mask jig 32 are brought into close contact to prevent film deposition in unwanted areas. At this time, the substrate alignment section 33 adjusts the position between the area on the substrate 60 where film deposition is required and the opening 35 of the mask jig 32.

[0130] Since structures such as light-emitting elements are formed in the aperture 35, the aperture 35 can be adjusted according to the purpose. For example, the size of the aperture 35 can be determined according to the size of the exposure area, as described below.

[0131] Figures 15A to 15C show an example of the number of display devices per substrate (e.g., silicon wafer) with a diameter of φ = 12 inches. In Figures 15A to 15C, the estimate assumes that the external connection terminals are routed from the back surface using through electrodes. This allows for a larger display area. Alternatively, pads may be provided within the exposure area. In this case, the display area will be smaller, but the manufacturing cost associated with routing the external connection terminals can be reduced.

[0132] Figures 15A to 15C show examples where the aspect ratio of the display area is set to 4:3.

[0133] Figure 15A shows an example of providing a sealing area inside the exposure area (32mm x 24mm) of the exposure apparatus. In the example in Figure 15A, the width of the sealing area is 1.5mm in the vertical direction and 2.0mm in the horizontal direction. In this case, the size of the display area is 28mm x 21mm (aspect ratio 4:3) and the diagonal is approximately 1.38 inches. The number of display devices per substrate is 72. If the width of the sealing area is 2.0mm in the vertical direction and 2.65mm in the horizontal direction, the size of the display area will be 26.7mm x 20mm (aspect ratio 4:3) and the diagonal will be approximately 1.32 inches. If the width of the sealing area is 3.0mm in the vertical direction and 4.0mm in the horizontal direction, the size of the display area will be 24mm x 18mm (aspect ratio 4:3) and the diagonal will be approximately 1.18 inches. In both cases, the number of display devices per circuit board is 72.

[0134] Figures 15B and 15C show examples where a sealing area is provided outside the exposure area (32 mm x 24 mm) of the exposure apparatus. In this case, exposure is performed with a gap equal to the size of the sealing area. A marker area is provided inside the exposure area. Figure 15B shows an example where the width of the marker area is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing area is 2.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.51 inches diagonally. The number of display devices per substrate is 56. Note that if the width of the marker area is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display area will be approximately 1.45 inches diagonally. Figure 15C shows an example where the width of the marker area is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing area is 3.0 mm. In this configuration, the display area of ​​the display device is approximately 1.51 inches diagonally, the same as the configuration shown in Figure 15B. The number of display devices per circuit board is 49, which is about 13% less than the configuration shown in Figure 15B.

[0135] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0136] (Embodiment 2) In this embodiment, a manufacturing apparatus different from that of Embodiment 1 will be described with reference to the drawings. The manufacturing apparatus described in this embodiment differs from that of Embodiment 1 in that some of the film deposition equipment is of the batch type. Elements common to both Embodiment 1 and Embodiment 1 will be described using the same reference numerals.

[0137] <Configuration Example 1> Figure 16 is a block diagram illustrating a manufacturing apparatus for a light-emitting device according to one aspect of the present invention. The manufacturing apparatus has multiple clusters arranged in a process order. In this specification, a group of devices that share transport equipment, etc., is referred to as a cluster. The substrate on which the light-emitting device is formed moves sequentially through the clusters to undergo each process.

[0138] The manufacturing apparatus shown in Figure 16 is an example having clusters C1 to C14. Clusters C1 to C14 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C14 as a substrate 60b on which a light-emitting device has been formed.

[0139] Here, clusters C1, C3, C5, C7, C9, C11, and C13 contain equipment for performing processes under controlled atmosphere. Clusters C2, C4, C6, C10, C12, and C14 contain equipment for performing vacuum processes (reduced pressure processes).

[0140] Clusters C1, C5, and C9 mainly contain equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly contain equipment for forming organic compounds for light-emitting devices. Clusters C3, C7, and C11 mainly contain equipment for performing lithography processes. Clusters C4, C8, and C12 mainly contain equipment for performing etching and ashing processes. Cluster C13 contains equipment for etching and cleaning substrates. Cluster C14 mainly contains equipment for forming organic compounds for light-emitting devices and equipment for forming protective films to seal light-emitting devices.

[0141] Next, we will explain the details of clusters C1 to C14 using the top views shown in Figures 17 to 20.

[0142] <Cluster C1 to Cluster C4> Clusters C1 through C4 will be explained using Figures 17 and 18. Cluster C1 is connected to cluster C2 via load lock room B1. Cluster C2 is connected to cluster C3 via load lock room B2. Cluster C3 is connected to cluster C4 via load lock room B3. Cluster C4 is connected to cluster C5 via load lock room B4.

[0143] <Atmospheric pressure processing equipment A> Clusters C1 and C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly perform processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 is also provided with a load chamber LD.

[0144] The number of atmospheric pressure process units A in clusters C1 and C3 may be one or more, depending on the purpose. Furthermore, atmospheric pressure process units A may not be limited to processes under atmospheric pressure, but may be controlled to a slightly negative or positive pressure above atmospheric pressure. Also, if multiple atmospheric pressure process units A are provided, the atmospheric pressure may differ for each.

[0145] Valves for introducing inert gas (IG) are connected to transfer chambers TF1 and TF3 and atmospheric pressure process apparatus A, allowing the atmosphere to be controlled to an inert gas environment. Nitrogen, or noble gases such as argon or helium can be used as the inert gas. Furthermore, it is preferable that the inert gas has a low dew point (e.g., below -50°C). Performing the process under a low-dew-point inert gas atmosphere prevents the inclusion of impurities, enabling the formation of highly reliable organic EL elements.

[0146] The atmospheric pressure process apparatus A in cluster C1 can be a cleaning apparatus, a baking apparatus, or the like. For example, a spin cleaning apparatus or a hot plate type baking apparatus can be used. The baking apparatus may also be a vacuum baking apparatus.

[0147] The atmospheric pressure process apparatus A in cluster C3 can be an apparatus for performing lithography processes. For example, when performing a photolithography process, a resin (photoresist) coating apparatus, exposure apparatus, developing apparatus, baking apparatus, etc., can be used. When performing a nanoimprint lithography process, a resin (UV-curing resin, etc.) coating apparatus, nanoimprint apparatus, etc., can be used. In addition, depending on the application, a cleaning apparatus, wet etching apparatus, coating apparatus, resist stripping apparatus, etc., may be applied to atmospheric pressure process apparatus A.

[0148] Cluster C1 shows an example where atmospheric pressure process units A1 and A2 are each connected to transfer chamber TF1 via gate valves. Cluster C3 shows an example where atmospheric pressure process units A3 through A7 are each connected to transfer chamber TF3 via gate valves. By providing gate valves, it is possible to control pressure, inert gas species, and prevent cross-contamination.

[0149] The transfer chamber TF1 is connected to the load chamber via a gate valve. It is also connected to the load lock chamber B1 via another gate valve. A transport device 70a is provided in the transfer chamber TF1. The transport device 70a can transport substrates from the load chamber LD to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B1.

[0150] The transfer chamber TF3 is connected to the load lock chamber B2 via a gate valve. It is also connected to the load lock chamber B3 via another gate valve. A transport device 70b is provided in the transfer chamber TF3. The transport device 70b can transport substrates from the load lock chamber B2 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B3.

[0151] <Vacuum Processing Equipment V> Clusters C2 and C4 have vacuum process equipment V. Cluster C2 has a transfer chamber TF2 and vacuum process equipment V (vacuum process equipment V1 to V4). Cluster C4 has a transfer chamber TF4 and vacuum process equipment V (vacuum process equipment V5, V6).

[0152] The number of vacuum process units V in clusters C2 and C4 may be one or more, depending on the purpose. A vacuum pump VP is connected to each vacuum process unit V, and gate valves are provided between it and the transfer chambers TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process unit V.

[0153] Furthermore, a vacuum process refers to processing in a controlled environment under reduced pressure. Therefore, vacuum processes include not only processing under high vacuum but also processing that involves introducing a process gas and controlling the pressure under reduced pressure.

[0154] Independent vacuum pumps VP are also provided in the transfer chambers TF2 and TF4, which prevents cross-contamination during the process carried out in the vacuum process apparatus V.

[0155] The vacuum process equipment V in cluster C2 can include, for example, film deposition equipment such as a vapor deposition system, a sputtering system, a CVD (Chemical Vapor Deposition) system, and an ALD (Atomic Layer Deposition) system. For the CVD system, a thermal CVD system utilizing heat or a PECVD system (Plasma Enhanced CVD system) utilizing plasma can be used. Similarly, for the ALD system, a thermal ALD system utilizing heat or a PEALD system (Plasma Enhanced ALD system) utilizing plasma-excited reactant can be used.

[0156] For example, the vacuum process equipment V in cluster C4 can be a dry etching apparatus, an ashing apparatus, or the like.

[0157] The transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve. It is also connected to the load lock chamber B2 via another gate valve. The transfer chamber TF2 is equipped with a transport device 71a and a substrate transfer device 52a.

[0158] The substrate transfer device 52a includes a stage 83a and transport devices 72a and 72b. A mask jig 61 can be placed on the stage 83a. Multiple substrates can be mounted on the mask jig 61, and the transport device 71a can transport the substrates mounted on the mask jig 61 to each vacuum process device V. The stage 83a can also be moved in the X, Y, and θ directions.

[0159] The transport device 72a can invert the substrate placed in the load lock chamber B1 and mount it onto the mask jig 61. The transport device 72b can invert the substrate removed from the mask jig 61 and transport it to the load lock chamber B2. Details of these operations will be described later.

[0160] Multiple types of mask jigs can be used as the mask jig 61. The mask jigs can be stored in each vacuum process apparatus V and loaded and unloaded by the transport device 71a. Alternatively, a storage unit for the mask jigs 61 may be provided at the location where the vacuum process apparatus V is installed.

[0161] As mentioned above, the vacuum process apparatus V in cluster C2 is a batch type that processes substrates mounted on mask jigs 61, resulting in a large configuration for cluster C2. On the other hand, clusters C1, C3, and C4 are single-wafer type and therefore have smaller configurations.

[0162] The transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve. It is also connected to the load lock chamber B4 via another gate valve. The transfer chamber TF4 is equipped with a conveying device 70c. The conveying device 70c can convey materials from the load lock chamber B3 to the vacuum process apparatus V and then to the load lock chamber B4.

[0163] Load lock chambers B1, B2, B3, and B4 are equipped with a vacuum pump VP and valves for introducing inert gas. Therefore, load lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when transporting a substrate from cluster C2 to cluster C3, the substrate can be loaded into load lock chamber B2 under reduced pressure, and then the substrate can be unloaded into cluster C3 after the load lock chamber B2 is changed to an inert gas atmosphere.

[0164] Furthermore, the transport devices 70a, 70b, 70c and transport device 71a have a mechanism for transporting substrates by placing them on the hand portion. Since transport devices 70b and 70c operate under normal pressure, a vacuum suction mechanism or the like may be provided on the hand portion. The transport devices 72a and 72b have a mechanism for transporting substrates by fixing them to the hand portion. Since transport devices 72a and 72b operate under reduced pressure, a fixing method such as an electrostatic suction mechanism can be used.

[0165] As described above, the transport devices 70a, 70b, and 70c have different configurations from the transport devices 72a and 72b. Therefore, in load lock chambers B1 and B2, stages 80a and 80b are provided that allow substrates to be placed on pins. In addition, in load lock chambers B3 and B4, stages 81a and 81b are provided that allow substrates to be placed on a surface. Note that these are just examples, and stages with other configurations may be used. Details of substrate transfer in load lock chamber B1 will be described later.

[0166] <Cluster C5 to Cluster C8> Clusters C5 through C8 will be explained using Figures 18 and 19. Cluster C5 is connected to cluster C6 via load lock room B5. Cluster C6 is connected to cluster C7 via load lock room B6. Cluster C7 is connected to cluster C8 via load lock room B7. Cluster C8 is connected to cluster C9 (see Figure 19) via load lock room B8.

[0167] The basic configuration of clusters C5 through C8 is the same as that of clusters C1 through C4, with cluster C5 corresponding to cluster C1, cluster C6 to cluster C2, cluster C7 to cluster C3, and cluster C8 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B4 in cluster C5.

[0168] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0169] The following only describes the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0170] Clusters C5 and C7 each have atmospheric pressure process equipment A. Cluster C5 has a transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly perform processes under atmospheric pressure. Cluster C7 has a transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0171] The transfer chamber TF5 is connected to the load lock chamber B4 via a gate valve. It is also connected to the load lock chamber B5 via another gate valve. A transport device 70d is provided in the transfer chamber TF5. The transport device 70d can transport substrates from the load lock chamber B4 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B5. Clusters C6 and C8 have vacuum processing equipment V. Cluster C6 has a transfer chamber TF6 and vacuum processing equipment V (vacuum processing equipment V7 to V10). Cluster C8 has a transfer chamber TF8 and vacuum processing equipment V (vacuum processing equipment V11, V12).

[0173] The transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. The transfer chamber TF6 is equipped with a transport device 71b and a substrate transfer device 52b.

[0174] The substrate transfer device 52b includes a stage 83b and transport devices 72c and 72d. A mask jig 61 can be placed on the stage 83b. The transport device 71b can transport the substrate mounted on the mask jig 61 to each vacuum process device V. The stage 83b can also be moved in the X, Y, and θ directions.

[0175] Furthermore, the transfer chamber TF7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70e is provided in the transfer chamber TF7. The transport device 70d can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0176] The transport device 72c can invert the substrate placed in the load lock chamber B5 and mount it onto the mask jig 61. The transport device 72d can invert the substrate removed from the mask jig 61 and transport it to the load lock chamber B6.

[0177] The transfer chamber TF8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B8 via another gate valve. The transfer chamber TF8 is equipped with a transport device 70f. The transport device 70f can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B8.

[0178] In load lock chambers B5 and B6, stages 80c and 80d are provided, allowing the circuit board to be placed on the pins. In load lock chambers B7 and B8, stages 81c and 81d are provided, allowing the circuit board to be placed on the surface.

[0179] <Cluster C9 to Cluster C12> Clusters C9 through C12 will be explained using Figures 19 and 20. Cluster C9 is connected to cluster C10 via load lock room B9. Cluster C10 is connected to cluster C11 via load lock room B10. Cluster C11 is connected to cluster C12 via load lock room B11. Cluster C12 is connected to cluster C13 (see Figure 20) via load lock room B12.

[0180] The basic configuration of clusters C9 through C12 is the same as that of clusters C1 through C4, with cluster C9 corresponding to cluster C1, cluster C10 to cluster C2, cluster C11 to cluster C3, and cluster C12 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B8 in cluster C9.

[0181] Additionally, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0182] The following only describes the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0183] Clusters C9 and C11 have atmospheric pressure process equipment A. Cluster C9 has a transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly perform processes under atmospheric pressure. Cluster C11 has a transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0184] The transfer chamber TF9 is connected to the load lock chamber B8 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70g is provided in the transfer chamber TF9. The transport device 70g can transport substrates from the load lock chamber B8 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B9.

[0185] Furthermore, the transfer chamber TF11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transport device 70h is provided in the transfer chamber TF11. The transport device 70h can transport substrates from the load lock chamber B10 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B11.

[0186] Clusters C10 and C12 have vacuum process equipment V. Cluster C10 has a transfer chamber TF10 and vacuum process equipment V (vacuum process equipment V13 to V16). Cluster C12 has a transfer chamber TF12 and vacuum process equipment V (vacuum process equipment V17, V18).

[0187] The transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. The transfer chamber TF10 is equipped with a transport device 71c and a substrate transfer device 52c.

[0188] The substrate transfer device 52c includes a stage 83c and transport devices 72e and 72f. A mask jig 61 can be placed on the stage 83c. The transport device 71c can transport the substrate mounted on the mask jig 61 to each vacuum process device V. The stage 83c can also be moved in the X, Y, and θ directions.

[0189] The transport device 72e can invert the substrate placed in the load lock chamber B9 and mount it onto the mask jig 61. The transport device 72f can invert the substrate removed from the mask jig 61 and transport it to the load lock chamber B10.

[0190] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transport device 70i is provided in the transfer chamber TF12. The transport device 70i can transport substrates from the load lock chamber B11 to the vacuum process apparatus V and then to the load lock chamber B12.

[0191] In load lock chambers B9 and B10, stages 80e and 80f are provided, allowing the circuit board to be placed on the pins. In addition, in load lock chambers B11 and B12, stages 81e and 81f are provided, allowing the circuit board to be placed on the surface.

[0192] <Clusters C13, C14> Using Figure 20, we will explain clusters C13 and C14. Cluster C13 is connected to cluster C14 via load lock chamber B13. Note that explanations common to clusters C1, C2, etc., will be omitted.

[0193] Cluster C13 has atmospheric pressure process equipment A. Cluster C13 has a transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22, A23) which mainly perform processes under atmospheric pressure.

[0194] The atmospheric pressure process apparatus A in cluster C13 can be an etching apparatus, a bake apparatus, or the like. For example, it could be a wet etching apparatus or a hot plate type bake apparatus. The bake apparatus may also be a vacuum bake apparatus.

[0195] The transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transport device 70j is provided in the transfer chamber TF13. The transport device 70j can transport substrates from the load lock chamber B12 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B13.

[0196] The vacuum process equipment V in cluster C14 can include, for example, deposition equipment such as evaporation equipment, sputtering equipment, CVD equipment, ALD equipment, and opposing substrate bonding equipment.

[0197] The load lock chamber B13 is equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.

[0198] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transport device 70k is provided in the transfer chamber TF14. The transport device 70k can transport substrates from the load lock chamber B13 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the unload chamber ULD.

[0199] By using a manufacturing apparatus with the above configuration, a highly reliable light-emitting device sealed with a protective film can be formed.

[0200] For example, a continuous process can be carried out in an atmosphere-controlled apparatus, from forming organic EL elements that emit a first color of light in clusters C1 to C4, forming organic EL elements that emit a second color of light in clusters C5 to C8, forming organic EL elements that emit a third color of light in clusters C9 to C12, removing unwanted elements in cluster C13, and forming a protective film in cluster C14. Details of these processes will be described later.

[0201] <Configuration Example 2> Figure 21 is a block diagram illustrating a manufacturing apparatus for a light-emitting device different from that shown in Figure 16. The manufacturing apparatus shown in Figure 21 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 16. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C14 as a substrate 60b on which a light-emitting device has been formed.

[0202] In the manufacturing apparatus shown in Figure 16, clusters C5 and C9 have a cleaning device and a baking device. The processes preceding the cleaning process are etching (dry etching) and ashing. If residual gas components, residues, and deposits from these processes do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, it becomes unnecessary to consider residual moisture in the substrate, and therefore the baking process can also be omitted. Accordingly, in some cases, the configuration shown in Figure 21 may be used, which omits clusters C5 and C9 from the manufacturing apparatus shown in Figure 16. By omitting clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.

[0203] <Cluster C1 to Cluster C4> The configurations of clusters C1 to C4 can be the same as those shown in Figures 17 and 18. Cluster C4 is connected to cluster C6 via load lock chamber B5. If there is a distance between transfer chamber TF4 and transfer chamber TF6 in load lock chamber B5, the stage 80c may be configured to move along rail 87, as shown in Figure 22. Note that the configuration in which the stage moves along rail can also be applied to the other stages in Configuration Example 2, but that explanation will be omitted.

[0204] <Clusters C6, C7, C8, C10> Clusters C6, C7, C8, and C10 are described using Figures 22 and 23. Cluster C6 is connected to cluster C7 via load lock room B6. Cluster C7 is connected to cluster C8 via load lock room B7. Cluster C8 is connected to cluster C10 via load lock room B9. Cluster C10 is connected to cluster C11 (see Figure 20) via load lock room B10.

[0205] The following describes the configuration of connections between clusters. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C6, C7, C8, and C10, and load lock rooms B5, B7, B9, and B10 mentioned above.

[0206] The transfer chamber TF6 of cluster C6 is connected to the load lock chamber B5 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. The transfer chamber TF6 is equipped with a transport device 71b and a substrate transfer device 52b.

[0207] The substrate transfer device 52b includes a stage 83b and transport devices 72c and 72d. A mask jig 61 can be placed on the stage 83b. The transport device 71b can transport the substrate mounted on the mask jig 61 to each vacuum process device V. The stage 83b can also be moved in the X, Y, and θ directions.

[0208] The transport device 72c can invert the substrate placed in the load lock chamber B5 and mount it onto the mask jig 61. The transport device 72b can invert the substrate removed from the mask jig 61 and transport it to the load lock chamber B6.

[0209] The transfer chamber TF7 of cluster C7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70e is provided in the transfer chamber TF7. The transport device 70e can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0210] The transfer chamber TF8 of cluster C8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70f is provided in the transfer chamber TF8. The transport device 70f can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B9.

[0211] The transfer chamber TF10 of cluster C10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. The transfer chamber TF10 is equipped with a transport device 71c and a substrate transfer device 52c.

[0212] The substrate transfer device 52c includes a stage 83c and transport devices 72e and 72f. A mask jig 61 can be placed on the stage 83b. The transport device 71c can transport the substrate mounted on the mask jig 61 to each vacuum process device V. The stage 83c can also be moved in the X, Y, and θ directions.

[0213] The transport device 72e can invert the substrate placed in the load lock chamber B9 and mount it onto the mask jig 61. The transport device 72f can invert the substrate removed from the mask jig 61 and transport it to the load lock chamber B10.

[0214] <Clusters C11, C12, C13, C14> The configuration of clusters C11 through C14 can be the same as the configuration shown in Figure 20.

[0215] <Plate transport operation> For details on the operation of transporting the substrate from cluster C1 to cluster C2, etc., please refer to the explanation in Figures 12 and 13 of Embodiment 1.

[0216] Figure 24A illustrates the substrate transfer device 52a of cluster C2. The substrate transfer device 52a includes a transport device 72a, a stage 83a, and a transport device 72b. For clarity, the chamber wall and gate valve are omitted from the illustration. The operation of substrate transfer devices 52b and 52c, which have the same configuration as substrate transfer device 52a, can be described in the same way as below.

[0217] The configuration of the conveying device 72a is as described above. The conveying device 72b has a similar configuration.

[0218] The stage 83a is fixed on top of multiple moving mechanisms. The moving mechanisms can be a combination of an X-axis moving mechanism 84x, a Y-axis moving mechanism 84y, and a θ-axis moving mechanism 84θ, for example, as shown in Figure 24A. The Y-axis moving mechanism 84y is fixed to the X-axis moving mechanism 84x, the θ-axis moving mechanism 84θ is fixed to the Y-axis moving mechanism 84y, and the stage 83a is fixed to the θ-axis moving mechanism 84θ, allowing the stage 83a to be moved within a certain range in the X-axis, Y-axis, and θ-axis directions.

[0219] By adjusting the range of motion of the stage 83a and the extension and retraction of the arms of the transport devices 72a and 72b, the substrate 60 can be attached to the recessed portion 62 above the mask jig 61 installed on the stage 83a. The mask jig 61 has an opening and a recessed portion below, in addition to the recessed portion 62 above. Details of these will be described later.

[0220] The transport device 72a has a substrate rotation mechanism 98 that rotates the substrate fixing part 96. Circuits and the like are pre-formed on the surface of the substrate 60, and the substrate 60 and the mask jig 61 are brought into close contact to prevent film formation in unwanted areas. Therefore, when mounting the substrate 60 to the mask jig 61, the substrate rotation mechanism 98 aligns the pre-formed pattern on the substrate 60 with the opening of the mask jig 61 in the θ direction (see Figure 24B). The camera 86 used for this alignment can be provided on the stage 83a (see Figure 26B).

[0221] The size of the mask jig 61 and the number of substrates 60 to be mounted can be determined according to the purpose. If the length of the arm of the transport device 72a is insufficient, the stage 83a can be rotated using the θ-axis movement mechanism 84θ to bring the mounting position of the substrates 60 closer to the transport device 72a (see Figures 24C and 25A). If the length of the arm of the transport device 72a is sufficiently long, the θ-axis movement mechanism 84θ does not need to be provided. Furthermore, the X-axis movement mechanism 84x and the Y-axis movement mechanism 84y can also be omitted.

[0222] After the transfer device 72a places the desired number of substrates 60 onto the mask jig 61, the film deposition process is performed in cluster C2. The mask jig 61 is then returned to the stage 83a. The substrates 60, after the film deposition process is complete, are removed from the mask jig 61 using the transfer device 72b (see Figure 25B). Furthermore, since the next step is the lithography process in cluster C3, which has a transfer device 70b, the substrates are inverted using the transfer device 72b (see Figure 25C).

[0223] In cluster C2, the transport device 71a is used to transport the material to the vacuum process apparatus V where the film deposition process is performed (see Figure 26A).

[0224] The conveying device 71a has a lifting mechanism, an arm, and a hand section. The stage 83a is also equipped with a pusher pin 85. After raising the mask jig 61 with the pusher pin 85, the hand section of the conveying device 71a is inserted between the stage 83a and the mask jig 61, and the mask jig 61 can be placed on the hand section by lowering the pusher pin 85 or raising the hand section (see Figure 26B).

[0225] In addition to the pusher pins 85, a camera 86 is provided on the stage 83a. The camera 86 is positioned to overlap with the opening of the mask jig 61. Therefore, the alignment operation can be performed while checking the opening of the mask jig 61 and the pattern provided on the substrate 60 using the camera 86.

[0226] Figure 27A shows a perspective cross-sectional view of the line segment A1-A2 (see Figure 26B) with the mask jig 61 placed on the hand portion of the conveying device 71a. Figure 27B also shows a cross-sectional view of the mask jig 61 alone.

[0227] The mask jig 61 has an upper recessed portion 62 for mounting the substrate 60, a lower recessed portion 64, and an opening 63. By providing the lower recessed portion 64, the handle portion of the transport device 71a is in contact with the outside of the lower recessed portion 64 and not in contact with the vicinity of the opening 63. Therefore, a certain distance can be maintained between the handle portion and the surface of the substrate 60 (the surface to be coated), thereby suppressing contamination of the substrate 60 caused by the handle portion and the adhesion of dust.

[0228] Up to this point, the mask jig 61 has been used as an example in which four substrates 60 can be mounted at equal intervals. However, as shown in Figure 27C, it may also be configured to mount the substrates 60 in a staggered arrangement. Alternatively, as shown in Figure 27D, it may be configured to mount even more substrates 60. By using a staggered arrangement, the size of the mask jig 61 can be reduced, which in turn reduces the size of the film deposition apparatus and other equipment, thereby reducing the overall area of ​​the manufacturing apparatus.

[0229] Figure 28A illustrates the vacuum process apparatus V in which the mask jig 61 is installed, and in this diagram, the film deposition apparatus 40 is shown as an example. For clarity, the diagram is shown with the chamber wall transparent, and the gate valve is omitted.

[0230] The film deposition apparatus 40 has a film deposition material supply unit 42 and rails 41 for installing a mask jig 61. If the film deposition apparatus 40 is a vapor deposition apparatus, the film deposition material supply unit 42 is the part where the vapor deposition source is installed. If the film deposition apparatus 40 is a sputtering apparatus, it is the part where the target (cathode) is installed.

[0231] The rail 41 is fixed inside the chamber, and the mask jig 61 can be stably installed by placing the notched portion of the mask jig 61 on the rail 41. The rail 41 is also provided in a position where the film deposition material supply unit 42 and the mask jig 61 face each other.

[0232] A cooling plate 43, as shown in Figure 28B, may be installed on the mask jig 61. The cooling plate 43 is provided with a gas inlet 44 and an outlet 45 for cooling the substrate 60. Figure 28C is a cutaway view of a portion of the cooling plate 43. The substrate 60 is in contact with a sealing material 46 (for example, an O-ring) provided on the cooling plate 43. Therefore, a closed space is created between the substrate 60 and the cooling plate, with the sealing material 46 acting as a side wall.

[0233] Cooling gas (such as an inert gas) can be introduced into the enclosed space through the inlet 44, and the cooling gas, which has transferred heat from the substrate 60, can be discharged through the outlet 45. By providing conductance valves at one or both of the inlet 44 and the outlet 45, the substrate 60 can be cooled uniformly while maintaining a constant pressure in the enclosed space during the introduction and discharge of cooling gas.

[0234] In Figure 28B, an example is shown where one valve is provided for each of the two inlet 44 and outlet 45 systems. However, one valve may also be provided for each of the inlet 44 and outlet 45 systems. Furthermore, the number of inlet 44 and outlet 45 is not limited and should be determined considering the cooling capacity and uniformity of cooling.

[0235] Organic compounds, which are constituent materials of organic EL elements and the like, deteriorate at high temperatures; therefore, it is preferable to carry out the post-organic compound formation process at 80°C or lower, preferably 70°C or lower. In a sputtering apparatus, the substrate 60 is exposed to plasma, and the substrate 60 may be heated to over 100°C. Therefore, it is preferable to cool the substrate 60 using the cooling plate 43 described above. Although the term "cooling" is used above, it can also be rephrased as adjusting the temperature of the substrate to below a certain temperature.

[0236] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0237] (Embodiment 3) This embodiment describes a specific example of a light-emitting element (organic EL element) manufactured using a light-emitting device manufacturing apparatus according to one aspect of the present invention.

[0238] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0239] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to become a full-color display light-emitting device.

[0240] Furthermore, light-emitting devices can be broadly classified into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, one should select light-emitting layers such that the light-emitting colors of each of the two or more layers are complementary. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0241] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0242] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0243] Furthermore, a tandem structure device may have a configuration (such as BB, GG, RR) in which light-emitting layers emit light of the same color. Although a tandem structure, which obtains light emission from multiple layers, requires a high voltage for light emission, the current required to obtain the same light emission intensity as a single structure is smaller. Therefore, in a tandem structure, the current stress per light-emitting unit can be reduced, and the device lifespan can be extended.

[0244] <Example Configuration> Figure 29 shows a schematic top view of a display device 100 manufactured using a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The display device 100 has multiple red light-emitting elements 110R, green light-emitting elements 110G, and blue light-emitting elements 110B. In Figure 29, the labels R, G, and B are added within the light-emitting area of ​​each light-emitting element to simplify the distinction between them.

[0245] The light-emitting elements 110R, 110G, and 110B are each arranged in a matrix. Figure 29 shows a so-called stripe arrangement, in which light-emitting elements of the same color are arranged in one direction. Note that the arrangement method of the light-emitting elements is not limited to this; other arrangement methods such as delta arrangement and zigzag arrangement may also be applied, and a pentile arrangement can also be used.

[0246] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as the light-emitting elements 110R, 110G, and 110B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0247] Figure 30A is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 29.

[0248] Figure 30A shows cross-sections of light-emitting elements 110R, 110G, and 110B. Each of the light-emitting elements 110R, 110G, and 110B is mounted on a pixel circuit and has a pixel electrode 111 and a common electrode 113.

[0249] The light-emitting element 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a luminescent organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting element 110G contains a luminescent organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting element 110B contains a luminescent organic compound that emits light having a peak in at least the blue wavelength range. A structure in which the EL layers 112R, 112G, and 112B each emit light of different colors may be called an SBS (Side By Side) structure.

[0250] Each of the EL layers 112R, 112G, and 112B may have, in addition to a layer containing a light-emitting organic compound (light-emitting layer), one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0251] A pixel electrode 111 is provided for each light-emitting element. A common electrode 113 is provided as a continuous layer common to all light-emitting elements. A conductive film that is translucent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used for the other. By making the pixel electrode 111 translucent and the common electrode 113 reflective, a bottom-emission type display device can be made. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 translucent, a top-emission type display device can be made. Furthermore, by making both the pixel electrode 111 and the common electrode 113 translucent, a dual-emission type display device can be made. In this embodiment, an example of manufacturing a top-emission type display device will be described.

[0252] An insulating layer 131 is provided to cover the ends of the pixel electrodes 111. Preferably, the ends of the insulating layer 131 are tapered.

[0253] Each of the EL layers 112R, 112G, and 112B has a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131. The edges of the EL layers 112R, 112G, and 112B are located on the insulating layer 131.

[0254] As shown in Figure 30A, a gap is provided between the two EL layers between light-emitting elements of different colors. It is preferable that the EL layers 112R, 112G, and 112B are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent EL layers, thus preventing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized.

[0255] Furthermore, a protective layer 121 is provided on the common electrode 113, covering the light-emitting elements 110R, 110G, and 110B. The protective layer 121 has the function of preventing impurities from diffusing into each light-emitting element from above. Alternatively, the protective layer 121 has the function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light-emitting element.

[0256] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0257] The pixel electrode 111 is electrically connected to either the source or the drain of the transistor 116. For example, the transistor 116 can be a transistor having a metal oxide in the channel formation region (hereinafter referred to as an OS transistor). OS transistors have higher mobility and superior electrical properties than amorphous silicon. Furthermore, OS transistors do not require the crystallization process in the manufacturing process of polycrystalline silicon and can be formed in wiring processes, etc. Therefore, OS transistors can be formed on a transistor 115 (hereinafter referred to as a Si transistor) having silicon in the channel formation region, which is formed on the substrate 60, without using bonding processes, etc.

[0258] Here, transistor 116 is a transistor that constitutes the pixel circuit. Transistor 115 is a transistor that constitutes the drive circuit for the pixel circuit, etc. In other words, since the pixel circuit can be formed on the drive circuit, a narrow-bezel display device can be formed.

[0259] As the semiconductor material used in the OS transistor, a metal oxide with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used.

[0260] OS transistors exhibit extremely low off-current characteristics of a few yA / μm (current value per 1 μm channel width) due to the large energy gap of the semiconductor layer. Furthermore, OS transistors have characteristics that differ from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, enabling the formation of highly reliable circuits with high voltage resistance. Additionally, variations in electrical characteristics caused by crystalline non-uniformity, which are problematic in Si transistors, are less likely to occur in OS transistors.

[0261] The semiconductor layer of the OS transistor can be a film represented by an In-M-Zn-based oxide containing, for example, indium, zinc, and M (one or more of metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can typically be formed by sputtering. Alternatively, it may be formed using the ALD (Atomic Layer Deposition) method.

[0262] The atomic ratio of the metal elements of the sputtering target used to form the In-M-Zn-based oxide by sputtering preferably satisfies In≧M and Zn≧M. As such atomic ratios of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, etc. are preferable. Note that the atomic ratio of the formed semiconductor layer includes fluctuations of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0263] As the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3 or less, even more preferably 1×10 11 / cm 3 or less, still more preferably 1×10 10 / cm 3 or less, and an oxide semiconductor with a carrier density of 1×10 -9 / cm 3 or more can be used. Such an oxide semiconductor is called a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. It can be said that the oxide semiconductor has a low density of defect levels and stable characteristics.

[0264] Note that the present invention is not limited to these examples, and an oxide semiconductor with an appropriate composition may be used according to the semiconductor characteristics and electrical characteristics (such as field-effect mobility and threshold voltage) of the required transistors. Further, in order to obtain the semiconductor characteristics of the required transistors, it is preferable to make the carrier density, impurity concentration, defect density, atomic number ratio of metal elements and oxygen, interatomic distance, density, etc. of the semiconductor layer appropriate values.

[0265] In FIG. 30A, a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from each other is illustrated, but the present invention is not limited to this. For example, as shown in FIG. 30B, an EL layer 112W that emits white light may be provided, and color layers 114R (red), 114G (green), and 114B (blue) may be provided so as to overlap the EL layer 112W to form light-emitting elements 110R, 110G, and 110B, and a colorization method may be used.

[0266] As the EL layer 112W, for example, it may have a tandem structure in which EL layers that emit light of R, G, and B are connected in series. Alternatively, a structure in which light-emitting layers that emit light of R, G, and B are connected in series may be used. As the color layers 114R, 114G, and 114B, for example, color filters of red, green, and blue may be used.

[0267] Alternatively, as shown in FIG. 30C, a pixel circuit may be configured by transistors 117 provided on the substrate 60, and one of the source or drain of the transistor 117 may be electrically connected to the pixel electrode 11!

[0268] [[ID=!!ID=18]] <Manufacturing method example> Hereinafter, an example of a method for manufacturing a light-emitting device that can be manufactured by the manufacturing apparatus according to one aspect of the present invention will be described. Here, the light-emitting device included in the display device 100 shown in the above configuration example will be described as an example. [[ID=!!ID=23]]

[0269] It should be noted that there seems to be a formatting or numbering irregularity in the original text where "!!ID=" is present in the tags. This might be an error in the original input, but the translation is done as per the provided rules while maintaining the original tags as accurately as possible.Figs. 31A to 33E are schematic cross-sectional views of each step of a method for manufacturing a light-emitting device, which will be exemplified below. In Figs. 31A to 33E, the transistor 116 which is a component of the pixel circuit shown in Fig. 30A and the transistor 115 which is a component of the drive circuit are omitted from the illustration.

[0270] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, an atomic layer deposition (ALD) method, or the like. As the CVD method, there are a plasma chemical vapor deposition (PECVD: Plasma Enhanced CVD) method, a thermal CVD method, or the like. Further, as one of the thermal CVD methods, there is a metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method. In the manufacturing apparatus according to one aspect of the present invention, an apparatus for forming a thin film by the above method can be provided.

[0271] Also, for the formation of the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device and the coating of resins and the like used in the lithography process, methods such as spin coating, dip coating, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc. can be used. In the manufacturing apparatus according to one aspect of the present invention, an apparatus for forming a thin film by the above method can be provided. Further, in the manufacturing apparatus according to one aspect of the present invention, an apparatus for coating a resin by the above method can be provided.

[0272] Also, when processing the thin films constituting the display device, a photolithography method or the like can be used. Alternatively, the thin films may be processed by using a nanoimprint method. Further, a method of directly forming island-shaped thin films by a film formation method using a shielding mask may be used in combination.

[0273] There are two main methods for processing thin films using photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and finally removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0274] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0275] For etching thin films, dry etching methods, wet etching methods, and the like can be used. In one embodiment of the present invention, the manufacturing apparatus may have an apparatus for processing thin films using the above methods.

[0276] <Preparation of substrate 60> As the substrate 60, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When an insulating substrate is used as the substrate 60, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used.

[0277] In particular, as the substrate 60, it is preferable to use a substrate on which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or the insulating substrate. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be constituted.

[0278] <Formation of Pixel Circuit and Pixel Electrode 111> Subsequently, a plurality of pixel circuits are formed on the substrate 60, and pixel electrodes 111 are formed in each pixel circuit. First, a conductive film to be the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. Thereafter, the pixel electrode 111 can be formed by removing the resist mask.

[0279] As the pixel electrode 111, it is preferable to apply a material (such as silver or aluminum) having a reflectance as high as possible in the entire visible light wavelength range. The pixel electrode 111 formed of the material can be referred to as an electrode having light reflectivity. Thereby, not only can the light extraction efficiency of the light-emitting element be improved, but also the color reproducibility can be improved.

[0280] <Formation of Insulating Layer 131> Subsequently, an insulating layer 131 is formed covering the end portion of the pixel electrode 111 (see FIG. 31A). As the insulating layer 131, an organic insulating film or an inorganic insulating film can be used. The insulating layer 131 preferably has a tapered shape at the end portion in order to improve the step coverage of the subsequent EL film. In particular, when an organic insulating film is used, it is preferable to use a photosensitive material because it is easy to control the shape of the end portion depending on the exposure and development conditions.

[0281] <Formation of EL Film 112Rf> Subsequently, an EL film 112Rf which will later become the EL layer 112R is formed on the pixel electrode 111 and the insulating layer 131.

[0282] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are stacked. The EL film 112Rf can be formed, for example, by a vapor deposition method, a sputtering method, or the like. However, it is not limited to this, and the above-described film formation methods can be appropriately used.

[0283] <Formation of the protective film 125Rf> Subsequently, a protective film 125Rf that will later become the protective layer 125R is formed on the EL film 112Rf (see FIG. 31B).

[0284] The protective layer 125R is a temporary protective layer used to prevent the deterioration and disappearance of the EL layer 112R in the manufacturing process of the organic EL device, and is also called a sacrificial layer. The protective film 125Rf preferably has a high barrier property against moisture and the like and is formed by a film formation method that is less likely to damage the organic compound during film formation. Also, it is preferably formed of a material that can use an etchant that is less likely to damage the organic compound in the etching process. For example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.

[0285] <Formation of the resist mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting element 110R (see FIG. 31C). The resist mask 143a can be formed in a lithography process.

[0286] <Formation of the EL layer 112R and the protective layer 125R> Subsequently, using the resist mask 143a as a mask, the protective film 125Rf and the EL film 112Rf are etched to form the protective layer 125R and the EL layer 112R in an island shape (see FIG. �1D). A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143a is removed by ashing or a resist stripping solution.

[0287] <Formation of the EL film 112Gf> Subsequently, an EL film 112Gf, which will later become the EL layer 112G, is formed on the exposed pixel electrode 111, the insulating layer 131, and the protective layer 125R.

[0288] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0289] <Formation of the protective film 125Gf> Subsequently, a protective film 125Gf, which will later become the protective layer 125G, is formed on the EL film 112Gf (see FIG. 32A). The protective film 125Gf can be formed of the same material as the protective film 125Rf.

[0290] <Formation of the resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting element 110G (see FIG. 32B). The resist mask 143b can be formed in a lithography process.

[0291] <Formation of the EL layer 112G and the protective layer 125G> Subsequently, using the resist mask 143b as a mask, the protective film 125Gf and the EL film 112Gf are etched to form the protective layer 125G and the EL layer 112G in an island shape (see FIG. 32C). A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143b is removed by ashing or a resist stripping solution.

[0292] <Formation of the EL film 112Bf> Subsequently, an EL film 112Bf, which will later become the EL layer 112B, is formed on the exposed pixel electrode 111, the insulating layer 131, and the protective layers 125R and 125G.

[0293] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0294] <Formation of the protective film 125Bf> Subsequently, a protective film 125Bf that will later become the protective layer 125B is formed on the EL film 112Bf (see Fig. 32D). The protective film 125Bf can be formed of the same material as the protective film 125Rf.

[0295] <Formation of the resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting element 110B (see Fig. 33A). The resist mask 143b can be formed by a lithography process.

[0296] <Formation of the EL layer 112B and the protective layer 125B> Subsequently, using the resist mask 143c as a mask, the protective film 125Bf and the EL film 112Bf are etched to form the protective layer 125B and the EL layer 112G in an island shape (see Fig. 33B). A dry etching method or a wet etching method can be used for the etching process. Thereafter, the resist mask 143b is removed by ashing or a resist stripper (see Fig. 33C).

[0297] <Removal of the protective layers 125R, 125G, and 125B> Subsequently, the protective layers 125R, 125G, and 125B are removed (see Fig. 33D). For the removal of the protective layer, it is preferable to use a wet etching method using an etchant suitable for the material of the protective layer.

[0298] <Formation of the common electrode> Next, a conductive layer, which will become the common electrode 113 of the organic EL element, is formed on the EL layer 112R, EL layer 112G, EL layer 112B, and insulating layer 131 that were exposed in the previous step. As the common electrode 113, a single film or a laminate of both can be used, which is a thin metal film that transmits light emitted from the light-emitting layer (for example, an alloy of silver and magnesium) or a translucent conductive film (for example, indium tin oxide, or an oxide containing one or more indium, gallium, zinc, etc.). The common electrode 113 made of such a film can be said to be an electrode that transmits light. A vapor deposition apparatus and / or a sputtering apparatus can be used in the step of forming the conductive layer that will become the common electrode 113.

[0299] Furthermore, to improve reliability, before forming the common electrode 113, a layer having one of the functions of an electron injection layer, electron transport layer, charge generation layer, hole transport layer, or hole injection layer may be provided as a common layer on the EL layer 112R, EL layer 112G, and EL layer 112B.

[0300] By having a light-reflecting electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission type light-emitting element is formed.

[0301] <Protective layer formation> Next, a protective layer 121 is formed on the common electrode 113 (see Figure 33E). A sputtering apparatus, CVD apparatus, or ALD apparatus can be used for the process of forming the protective layer.

[0302] <Production equipment example 1> Figure 34 shows an example of a manufacturing apparatus that can be used in the manufacturing process from the formation of the EL film 112Rf to the formation of the protective layer 121 described above. The basic configuration of the manufacturing apparatus shown in Figure 34 is the same as that of the manufacturing apparatus shown in Figure 1.

[0303] Clusters C1 through C14 are described in detail below. Figure 34 is a schematic perspective view of the entire manufacturing apparatus, omitting illustrations of utilities and gate valves. Furthermore, the transfer chambers TF1 through TF14 and load lock chambers B1 through B13 are shown with their interiors visualized for clarity.

[0304] <Cluster C1> Cluster C1 includes a load chamber LD and atmospheric pressure process equipment A1 and A2. Atmospheric pressure process equipment A1 can be a cleaning device, and atmospheric pressure process equipment A2 can be a baking device. In cluster C1, a cleaning process is performed before the deposition of the EL film 112Rf.

[0305] <Cluster C2> Cluster C2 comprises vacuum process apparatuses V1 to V4. Vacuum process apparatuses V1 to V4 are deposition apparatuses for forming the EL film 112Rf and film deposition apparatuses (e.g., deposition apparatus, ALD apparatus, etc.) for forming the protective film 125Rf. For example, vacuum process apparatus V1 can be used as an apparatus for forming an organic compound layer that will become the light-emitting layer (R). Vacuum process apparatuses V2 and V3 can be assigned as apparatuses for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum process apparatus V4 can be assigned as an apparatus for forming the protective film 125Rf.

[0306] <Cluster C3> Cluster C3 includes atmospheric pressure process equipment A3 to A7. Atmospheric pressure process equipment A3 to A7 can be used in the lithography process. For example, atmospheric pressure process equipment A3 can be a resin (photoresist) coating device, atmospheric pressure process equipment A4 can be a pre-bake device, atmospheric pressure process equipment A5 can be an exposure device, atmospheric pressure process equipment A6 can be a developing device, and atmospheric pressure process equipment A7 can be a post-bake device. Alternatively, atmospheric pressure process equipment A5 may be a nanoimprint device.

[0307] <Cluster C4> Cluster C4 includes vacuum process apparatuses V5 and V6. Vacuum process apparatus V5 can be a dry etching apparatus for forming the EL layer 112R. Vacuum process apparatus V6 can be an ashing apparatus for removing the resist mask.

[0308] <Cluster C5> Cluster C5 includes atmospheric pressure process equipment A8 and A9. Atmospheric pressure process equipment A8 can be used as a cleaning device, and atmospheric pressure process equipment A9 can be used as a baking device. In cluster C5, a cleaning process is performed before the deposition of the EL film 112Gf.

[0309] <Cluster C6> Cluster C6 includes vacuum process apparatuses V7 to V10. Vacuum process apparatuses V7 to V10 are deposition apparatuses for forming the EL film 112Gf and film deposition apparatuses (e.g., sputtering apparatuses) for forming the protective film 125Gf. For example, vacuum process apparatus V7 can be used as an apparatus for forming the organic compound layer that will become the light-emitting layer (G). Vacuum process apparatuses V8 and V9 can be assigned as apparatuses for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum process apparatus V10 can be assigned as an apparatus for forming the protective film 125Gf.

[0310] <Cluster C7> Cluster C7 includes atmospheric pressure process equipment A10 to A14. Atmospheric pressure process equipment A10 to A14 can be used for the lithography process. The equipment allocation can be the same as in Cluster C3.

[0311] <Cluster C8> Cluster C8 includes vacuum process equipment V11 and V12. Vacuum process equipment V11 can be a dry etching apparatus for forming the EL layer 112G. Vacuum process equipment V12 can be an ashing apparatus for removing the resist mask.

[0312] <Cluster C9> Cluster C9 includes atmospheric pressure process devices A15 and A16. Atmospheric pressure process device A15 can be a cleaning device, and atmospheric pressure process device A16 can be a baking device. In cluster C9, a cleaning process is performed before the deposition of the EL film 112Bf.

[0313] <Cluster C10> Cluster C10 includes vacuum process apparatuses V13 to V16. Vacuum process apparatuses V13 to V16 are deposition apparatuses for forming the EL film 112Bf and film deposition apparatuses (e.g., sputtering apparatuses) for forming the protective film 125Bf. For example, vacuum process apparatus V13 can be used as an apparatus for forming an organic compound layer that will become the light-emitting layer (G). Vacuum process apparatuses V14 and V15 can be assigned as apparatuses for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum process apparatus V16 can be assigned as an apparatus for forming the protective film 125Bf.

[0314] <Cluster C11> Cluster C11 includes atmospheric pressure process equipment A17 to A21. Atmospheric pressure process equipment A17 to A21 can be equipment used in the lithography process. The equipment allocation can be the same as in Cluster C3.

[0315] <Cluster C12> Cluster C12 includes vacuum process equipment V17 and V18. Vacuum process equipment V17 can be a dry etching apparatus for forming the EL layer 112B. Vacuum process equipment V18 can be an ashing apparatus for removing the resist mask.

[0316] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 and A23. Atmospheric pressure process equipment A22 can be a wet etching apparatus, and atmospheric pressure process equipment A23 can be a bake apparatus. In cluster C9, etching processes for protective layers 125R, 125G, and 125B are performed.

[0317] <Cluster C14> Cluster C14 includes vacuum processing apparatuses V19 to V21 and an unloading chamber ULD. Vacuum processing apparatus V19 can be assigned to form any of the following organic compound layers (e.g., an evaporation apparatus): an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, or a hole injection layer. Vacuum processing apparatus V20 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. Vacuum processing apparatus V21 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum processing apparatus V may be provided to provide multiple different film deposition apparatuses (e.g., evaporation apparatus, ALD apparatus, etc.) to form the common electrode 113 and the protective layer 121 as a laminated film.

[0318] Table 1 summarizes the elements corresponding to the process, processing equipment, and manufacturing method described above, using the manufacturing apparatus shown in Figure 34. Note that the loading and unloading of substrates into and out of the load lock chamber and each piece of equipment are omitted from the description.

[0319] [Table 1]

[0320] A manufacturing apparatus according to one embodiment of the present invention has the function of automatically processing steps No. 1 to No. 47 shown in Table 1.

[0321] <Production equipment example 2> Figure 35 shows an example of a manufacturing apparatus different from Manufacturing Apparatus Example 1. The basic configuration of the manufacturing apparatus shown in Figure 35 is the same as that of the manufacturing apparatus shown in Figure 34.

[0322] Clusters C1 through C14 are described in detail below. Figure 35 is a schematic perspective view of the entire manufacturing apparatus, omitting illustrations of utilities and gate valves. Furthermore, the transfer chambers TF1 through TF14 and load lock chambers B1 through B13 are shown with their interiors visualized for clarity.

[0323] <Cluster C1> Cluster C1 includes a load chamber LD and atmospheric pressure process equipment A1 and A2. Atmospheric pressure process equipment A1 can be a cleaning device, and atmospheric pressure process equipment A2 can be a baking device. In cluster C1, a cleaning process is performed before the deposition of the EL film 112Rf.

[0324] <Cluster C2> Cluster C2 includes a substrate transfer device 52a and vacuum processing devices V1 to V4. Vacuum processing devices V1 to V4 are deposition devices for forming the EL film 112Rf and film deposition devices (e.g., deposition devices, ALD devices, etc.) for forming the protective film 125Rf. For example, vacuum processing device V1 can be used as a device for forming an organic compound layer that will become the light-emitting layer (R). Vacuum processing devices V2 and V3 can be assigned as devices for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum processing device V4 can be assigned as a device for forming the protective film 125Rf.

[0325] <Cluster C3> Cluster C3 includes atmospheric pressure process equipment A3 to A7. Atmospheric pressure process equipment A3 to A7 can be used in the lithography process. For example, atmospheric pressure process equipment A3 can be a resin (photoresist) coating device, atmospheric pressure process equipment A4 can be a pre-bake device, atmospheric pressure process equipment A5 can be an exposure device, atmospheric pressure process equipment A6 can be a developing device, and atmospheric pressure process equipment A7 can be a post-bake device. Alternatively, atmospheric pressure process equipment A5 may be a nanoimprint device.

[0326] <Cluster C4> Cluster C4 includes vacuum process apparatuses V5 and V6. Vacuum process apparatus V5 can be a dry etching apparatus for forming the EL layer 112R. Vacuum process apparatus V6 can be an ashing apparatus for removing the resist mask.

[0327] <Cluster C5> Cluster C5 includes atmospheric pressure process equipment A8 and A9. Atmospheric pressure process equipment A8 can be used as a cleaning device, and atmospheric pressure process equipment A9 can be used as a baking device. In cluster C5, a cleaning process is performed before the deposition of the EL film 112Gf.

[0328] <Cluster C6> Cluster C6 includes a substrate transfer device 52b and vacuum processing devices V7 to V10. Vacuum processing devices V7 to V10 are deposition devices for forming the EL film 112Gf and film deposition devices (e.g., sputtering devices) for forming the protective film 125Gf. For example, vacuum processing device V7 can be used as a device for forming the organic compound layer that will become the light-emitting layer (G). Vacuum processing devices V8 and V9 can be assigned to form organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum processing device V10 can be assigned to form the protective film 125Gf.

[0329] <Cluster C7> Cluster C7 includes atmospheric pressure process equipment A10 to A14. Atmospheric pressure process equipment A10 to A14 can be used for the lithography process. The equipment allocation can be the same as in Cluster C3.

[0330] <Cluster C8> Cluster C8 includes vacuum process equipment V11 and V12. Vacuum process equipment V11 can be a dry etching apparatus for forming the EL layer 112G. Vacuum process equipment V12 can be an ashing apparatus for removing the resist mask.

[0331] <Cluster C9> Cluster C9 includes atmospheric pressure process devices A15 and A16. Atmospheric pressure process device A15 can be a cleaning device, and atmospheric pressure process device A16 can be a baking device. In cluster C9, a cleaning process is performed before the deposition of the EL film 112Bf.

[0332] <Cluster C10> Cluster C10 includes a substrate transfer device 52c and vacuum processing devices V13 to V16. Vacuum processing devices V13 to V16 are deposition devices for forming the EL film 112Bf and film deposition devices (e.g., sputtering devices) for forming the protective film 125Bf. For example, vacuum processing device V13 can be used as a device for forming an organic compound layer that will become the light-emitting layer (G). Vacuum processing devices V14 and V15 can be assigned as devices for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum processing device V16 can be assigned as a device for forming the protective film 125Bf.

[0333] <Cluster C11> Cluster C11 includes atmospheric pressure process equipment A17 to A21. Atmospheric pressure process equipment A17 to A21 can be equipment used in the lithography process. The equipment allocation can be the same as in Cluster C3.

[0334] <Cluster C12> Cluster C12 includes vacuum process equipment V17 and V18. Vacuum process equipment V17 can be a dry etching apparatus for forming the EL layer 112B. Vacuum process equipment V18 can be an ashing apparatus for removing the resist mask.

[0335] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 and A23. Atmospheric pressure process equipment A22 can be a wet etching apparatus, and atmospheric pressure process equipment A23 can be a bake apparatus. In cluster C9, etching processes for protective layers 125R, 125G, and 125B are performed.

[0336] <Cluster C14> Cluster C14 includes vacuum processing apparatuses V19 to V21 and an unloading chamber ULD. Vacuum processing apparatus V19 can be assigned to form any of the following organic compound layers (e.g., an evaporation apparatus): an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, or a hole injection layer. Vacuum processing apparatus V20 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. Vacuum processing apparatus V21 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum processing apparatus V may be provided to provide multiple different film deposition apparatuses (e.g., evaporation apparatus, ALD apparatus, etc.) to form the common electrode 113 and the protective layer 121 as a laminated film.

[0337] Table 2 summarizes the elements corresponding to the process, processing equipment, and manufacturing method described above, using the manufacturing apparatus shown in Figure 22. Note that the loading and unloading of substrates into and out of the load lock chamber and each apparatus are omitted from the description.

[0338] [Table 2]

[0339] A manufacturing apparatus according to one embodiment of the present invention has the function of automatically processing steps No. 1 to No. 53 shown in Table 2.

[0340] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. [Explanation of symbols]

[0341] A10: Atmospheric pressure process unit, A14: Atmospheric pressure process unit, A15: Atmospheric pressure process unit, A16: Atmospheric pressure process unit, A17: Atmospheric pressure process unit, A21: Atmospheric pressure process unit, A22: Atmospheric pressure process unit, A23: Atmospheric pressure process unit, B10: Load lock room, B11: Load lock room, B12: Load lock room, B13: Load lock room, C10: Cluster, C11: Cluster, C12: Cluster, C13: Cluster, C14: Cluster, LD: Load room, TF: Transfer room, TF10: Transfer room, TF11: Transfer room, TF12: Transfer chamber, TF13: Transfer chamber, TF14: Transfer chamber, TF46: Transfer chamber, TF810: Transfer chamber, ULD: Unloading chamber, V10: Vacuum processing equipment, V11: Vacuum processing equipment, V12: Vacuum processing equipment, V13: Vacuum processing equipment, V14: Vacuum processing equipment, V15: Vacuum processing equipment, V16: Vacuum processing equipment, V17: Vacuum processing equipment, V18: Vacuum processing equipment, V19: Vacuum processing equipment, V20: Vacuum processing equipment, V21: Vacuum processing equipment, VP: Vacuum pump, 30: Thin film deposition equipment, 31: Film deposition material supply unit, 32: Mask jig, 33: Substrate alignment unit, 35: Opening, 40: Film deposition apparatus, 41: Rail, 42: Film deposition material supply unit, 43: Cooling plate, 44: Inlet, 45: Outlet, 46: Sealing material, 52a: Substrate transfer device, 52b: Substrate transfer device, 52c: Substrate transfer device, 60a: Substrate, 60b: Substrate, 60: Substrate, 61: Mask jig, 62: Counterbore unit, 63: Opening, 64: Counterbore unit, 70a: Conveyor device, 70b: Conveyor device, 70c: Conveyor device, 70d: Conveyor device, 70e: Conveyor device, 70f: Conveyor device, 70g: Conveyor device, 70h: Conveyor device Place, 70i: Conveyor device, 70j: Conveyor device, 70k: Conveyor device, 71a: Conveyor device, 71b: Conveyor device, 71c: Conveyor device, 72a: Conveyor device, 72b: Conveyor device, 72c: Conveyor device, 72d: Conveyor device, 72e: Conveyor device, 72f: Conveyor device, 80a: Stage, 80b: Stage, 80c: Stage, 80d: Stage, 80e: Stage, 80f: Stage, 81a: Stage, 81b: Stage, 81c: Stage, 81d: Stage, 81e: Stage, 81f: Stage, 82: Pin, 83a: Stage, 83b: Stage, 83c: Stage,84x: X-axis movement mechanism, 84y: Y-axis movement mechanism, 85: Pusher pin, 86: Camera, 87: Rail, 91: Lifting mechanism, 92: Arm, 93: Hand part, 94: Lifting mechanism, 95: Arm, 96: Substrate fixing part, 97: Rotation mechanism, 98: Substrate rotation mechanism, 100: Display device, 110B: Light-emitting element, 110G: Light-emitting element, 110R: Light-emitting element, 111: Pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 115: transistor, 116: transistor, 117: transistor, 121: protective layer, 125B: protective layer, 125Bf: protective film, 125G: protective layer, 125Gf: protective film, 125R: protective layer, 125Rf: protective film, 131: insulating layer, 143a: resist mask, 143b: resist mask, 143c: resist mask,

[0342]

Claims

1. It has a first cluster to an eleventh cluster and a first load lock chamber to a tenth load lock chamber, The first cluster is connected to the second cluster via the first load lock chamber. The second cluster is connected to the third cluster via the second load lock chamber. The third cluster is connected to the fourth cluster via the third load lock chamber. The fourth cluster is connected to the fifth cluster via the fourth load lock chamber, The fifth cluster is connected to the sixth cluster via the fifth load lock chamber, The sixth cluster is connected to the seventh cluster via the sixth load lock chamber. The seventh cluster is connected to the eighth cluster via the seventh load lock chamber, The eighth cluster is connected to the ninth cluster via the eighth load lock chamber, The ninth cluster is connected to the tenth cluster via the ninth load lock chamber, The 10th cluster is connected to the 11th cluster via the 10th load lock chamber, Each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to reduce pressure. Each of the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster is controlled to an inert gas atmosphere. Each of the first cluster, the fourth cluster, and the seventh cluster comprises a first transport device and a plurality of film deposition devices. Each of the third cluster, the sixth cluster, and the ninth cluster comprises a second transport device, an etching device, and an ashing device. Each of the second cluster, the fifth cluster, and the eighth cluster comprises a third transport device and a plurality of devices for performing the lithography process. The tenth cluster comprises a fourth transport device and an etching device, The 11th cluster comprises a fifth transport device and a plurality of film deposition devices. The first transport device has a part for fixing the substrate, The aforementioned part has the function of inverting the substrate by rotating it. Manufacturing equipment for light-emitting devices.

2. It has a first cluster to a thirteenth cluster and a first load lock chamber to a twelfth load lock chamber, The first cluster is connected to the second cluster via the first load lock chamber. The second cluster is connected to the third cluster via the second load lock chamber. The third cluster is connected to the twelfth cluster via the third load lock chamber. The 12th cluster is connected to the 4th cluster via the 11th load lock chamber, The fourth cluster is connected to the fifth cluster via the fourth load lock chamber, The fifth cluster is connected to the sixth cluster via the fifth load lock chamber, The sixth cluster is connected to the thirteenth cluster via the sixth load lock chamber, The 13th cluster is connected to the 7th cluster via the 12th load lock chamber, The seventh cluster is connected to the eighth cluster via the seventh load lock chamber, The eighth cluster is connected to the ninth cluster via the eighth load lock chamber, The ninth cluster is connected to the tenth cluster via the ninth load lock chamber, The 10th cluster is connected to the 11th cluster via the 10th load lock chamber, Each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to reduce pressure. Each of the second cluster, the fifth cluster, the eighth cluster, the tenth cluster, the twelfth cluster, and the thirteenth cluster is controlled to an inert gas atmosphere. Each of the first cluster, the fourth cluster, and the seventh cluster comprises a first transport device and a plurality of film deposition devices. Each of the third cluster, the sixth cluster, and the ninth cluster comprises a second transport device, an etching device, and an ashing device. Each of the second cluster, the fifth cluster, and the eighth cluster comprises a third transport device and a plurality of devices for performing the lithography process. The tenth cluster comprises a fourth transport device and an etching device, The 11th cluster comprises a fifth transport device and a plurality of film deposition devices. Each of the 12th cluster and the 13th cluster has a washing device and a baking device, The first transport device has a part for fixing the substrate, The aforementioned part has the function of inverting the substrate by rotating it. Manufacturing equipment for light-emitting devices.

3. It has a first cluster to an eleventh cluster and a first load lock chamber to a tenth load lock chamber, The first cluster is connected to the second cluster via the first load lock chamber. The second cluster is connected to the third cluster via the second load lock chamber. The third cluster is connected to the fourth cluster via the third load lock chamber. The fourth cluster is connected to the fifth cluster via the fourth load lock chamber, The fifth cluster is connected to the sixth cluster via the fifth load lock chamber, The sixth cluster is connected to the seventh cluster via the sixth load lock chamber. The seventh cluster is connected to the eighth cluster via the seventh load lock chamber, The eighth cluster is connected to the ninth cluster via the eighth load lock chamber, The ninth cluster is connected to the tenth cluster via the ninth load lock chamber, The 10th cluster is connected to the 11th cluster via the 10th load lock chamber, Each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to reduce pressure. Each of the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster is controlled to an inert gas atmosphere. Each of the first cluster, the fourth cluster, and the seventh cluster comprises a first transport device, a substrate transfer device, and a plurality of film deposition devices. Each of the third cluster, the sixth cluster, and the ninth cluster comprises a second transport device, an etching device, and an ashing device. Each of the second cluster, the fifth cluster, and the eighth cluster comprises a third transport device and a plurality of devices for performing the lithography process. The tenth cluster comprises a fourth transport device and an etching device, The 11th cluster comprises a fifth transport device and a plurality of film deposition devices. The substrate transfer device comprises a stage, a sixth transport device, and a seventh transport device. A mask jig can be installed on the aforementioned stage. The first transport device has the function of transporting the mask jig on which the substrate is mounted, The sixth transport device has the function of mounting the substrate inverted onto the mask jig, The seventh transport device has the function of removing and inverting the substrate that is mounted on the mask jig. Manufacturing equipment for light-emitting devices.

4. It has a first cluster to a thirteenth cluster and a first load lock chamber to a twelfth load lock chamber, The first cluster is connected to the second cluster via the first load lock chamber. The second cluster is connected to the third cluster via the second load lock chamber. The third cluster is connected to the twelfth cluster via the third load lock chamber. The 12th cluster is connected to the 4th cluster via the 11th load lock chamber, The fourth cluster is connected to the fifth cluster via the fourth load lock chamber, The fifth cluster is connected to the sixth cluster via the fifth load lock chamber, The sixth cluster is connected to the thirteenth cluster via the sixth load lock chamber, The 13th cluster is connected to the 7th cluster via the 12th load lock chamber, The seventh cluster is connected to the eighth cluster via the seventh load lock chamber, The eighth cluster is connected to the ninth cluster via the eighth load lock chamber, The ninth cluster is connected to the tenth cluster via the ninth load lock chamber, The 10th cluster is connected to the 11th cluster via the 10th load lock chamber, Each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to reduce pressure. Each of the second cluster, the fifth cluster, the eighth cluster, the tenth cluster, the twelfth cluster, and the thirteenth cluster is controlled to an inert gas atmosphere. Each of the first cluster, the fourth cluster, and the seventh cluster comprises a first transport device, a substrate transfer device, and a plurality of film deposition devices. Each of the third cluster, the sixth cluster, and the ninth cluster comprises a second transport device, an etching device, and an ashing device. Each of the second cluster, the fifth cluster, and the eighth cluster comprises a third transport device and a plurality of devices for performing the lithography process. The tenth cluster comprises a fourth transport device and an etching device, The 11th cluster comprises a fifth transport device and a plurality of film deposition devices. Each of the 12th cluster and the 13th cluster has a washing device and a baking device, The substrate transfer device comprises a stage, a sixth transport device, and a seventh transport device. A mask jig can be installed on the aforementioned stage. The first transport device has the function of transporting the mask jig on which the substrate is mounted, The sixth transport device has the function of mounting the substrate inverted onto the mask jig, The seventh transport device has the function of removing and inverting the substrate that is mounted on the mask jig. Manufacturing equipment for light-emitting devices.

5. In claim 3 or claim 4, The aforementioned substrate transfer device is equipped with a camera, The sixth transport device is provided with a substrate rotation mechanism, The substrate is aligned using the camera and the substrate rotation mechanism, and then mounted on the mask jig. Manufacturing equipment for light-emitting devices.

6. In any one of claims 3 to 5, The mask jig can be used to mount multiple substrates. Manufacturing equipment for light-emitting devices.

7. In any one of claims 1 to 6, It has a 14th cluster and a 13th load lock chamber, The 14th cluster is connected to the first cluster via the 13th load lock chamber, The 14th cluster is controlled in an inert gas atmosphere, The 14th cluster comprises a washing device and a baking device. Manufacturing equipment for light-emitting devices.

8. In claim 7, The 14th cluster has a load chamber, The 11th cluster has an unloading chamber, Manufacturing equipment for light-emitting devices.

9. In any one of claims 1 to 8, The aforementioned plurality of film deposition apparatuses are one or more of the following: a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus. Manufacturing equipment for light-emitting devices.

10. In any one of claims 1 to 9, The etching apparatus in each of the third cluster, the sixth cluster, and the ninth cluster is a dry etching apparatus. Manufacturing equipment for light-emitting devices.

11. In any one of claims 1 to 10, The etching apparatus of the tenth cluster is a wet etching apparatus. Manufacturing equipment for light-emitting devices.

12. In any one of claims 1 to 11, The plurality of apparatuses for performing the lithography process include a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus. Manufacturing equipment for light-emitting devices.

13. In any one of claims 1 to 11, The plurality of devices that perform the lithography process include a coating device and a nanoimprint device. Manufacturing equipment for light-emitting devices.

14. In any one of claims 1 to 13, The substrate is a silicon wafer. Manufacturing equipment for light-emitting devices.

15. In any one of claims 1 to 14, Each of the aforementioned film deposition apparatuses is provided with an alignment mechanism and a mask jig. The alignment mechanism has the function of bringing the substrate and the mask jig into close contact. Manufacturing equipment for light-emitting devices.

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