Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus capable of recycling liquid discharged to a substrate before discharging processing liquid while reducing degradation in cleanliness of the processing liquid.SOLUTION: A substrate processing apparatus 1 discharges processing liquid obtained by mixing a plurality of kinds of liquid onto a substrate W. The substrate processing apparatus 1 comprises a prescribed liquid storage tank 54, a same-kind liquid supply part 200, a discharge part 20, and a recovery part 110. The prescribed liquid storage tank 54 stores prescribed liquid which is any of a plurality of kinds of liquid for producing the processing liquid. The same-kind liquid supply part 200 includes a first storage tank 204 for storing first same-kind liquid which is the same kind of liquid as the prescribed liquid. The discharge part 20 discharges the first same-kind liquid onto the substrate W before the processing liquid is discharged onto the substrate W. The recovery part 110 collects the first same-kind liquid discharged onto the substrate W, and supplies the first same-kind liquid to the first storage tank 204. The first same-kind liquid has a temperature higher than a room temperature. The first same-kind liquid is not used as any of the plurality of kinds of liquid.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In the substrate processing apparatus described in Patent Document 1, liquid is discharged from a processing liquid supply unit toward the upper surface of a substrate that is rotated by a substrate rotation mechanism. The processing liquid supply unit includes a sulfuric acid supply unit, a hydrogen peroxide water supply unit, a mixed liquid generation unit, and a nozzle. In the substrate processing apparatus, sulfuric acid heated by the sulfuric acid supply unit is supplied from the nozzle to the substrate, and a preheating treatment for the substrate is performed. Thereafter, the heated sulfuric acid from the sulfuric acid supply unit and the hydrogen peroxide water from the hydrogen peroxide water supply unit are mixed in the mixed liquid generation unit to generate SPM (sulfuric acid hydrogen peroxide water mixed liquid), and the SPM is supplied to the substrate to perform an SPM treatment.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the substrate processing apparatus described in Patent Document 1, a recovery unit recovers the sulfuric acid supplied to the substrate during the preheating treatment and returns it to the sulfuric acid supply unit. Therefore, the SPM used in the SPM treatment contains the recovered sulfuric acid. As a result, when the number of SPM treatments increases, the cleanliness of the SPM may decrease.

[0005] That is, a liquid (for example, sulfuric acid) discharged onto the substrate before the discharge of the processing liquid (for example, SPM) is reused to generate the processing liquid. Therefore, the cleanliness of the processing liquid may decrease.

[0006] The present invention has been made in view of the above problems, and its purpose is to provide a substrate processing apparatus and a substrate processing method that can reuse the liquid discharged onto the substrate before the processing liquid is discharged, while suppressing a decrease in the cleanliness of the processing liquid. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus processes a substrate by discharging a processing liquid, which is a mixture of multiple types of liquids, onto the substrate. The substrate processing apparatus comprises a substrate holding unit, a predetermined liquid storage tank, a homogeneous liquid supply unit, a discharge unit, and a recovery unit. The substrate holding unit holds and rotates the substrate. The predetermined liquid storage tank stores a predetermined liquid, which is one of the multiple types of liquids used to generate the processing liquid. The homogeneous liquid supply unit includes a first storage tank that stores a first homogeneous liquid, which is the same type of liquid as the predetermined liquid, and supplies the first homogeneous liquid. The discharge unit discharges the first homogeneous liquid supplied from the homogeneous liquid supply unit onto the substrate before the processing liquid derived from the predetermined liquid is discharged onto the substrate. The recovery unit recovers the first homogeneous liquid discharged onto the substrate and supplies the first homogeneous liquid to the first storage tank. The temperature of the first homogeneous liquid supplied from the homogeneous liquid supply unit is higher than room temperature. The first identical liquid is not used as any of the multiple types of liquids.

[0008] In one embodiment, it is preferable that the temperature of the first identical liquid when it is discharged onto the substrate is approximately the same as the temperature of the processing liquid when it is discharged onto the substrate.

[0009] In one embodiment, it is preferable that the temperature of the first identical liquid when it is discharged onto the substrate is higher than the temperature of the predetermined liquid when the processing liquid is generated.

[0010] In one embodiment, the same-type liquid supply unit preferably includes a second storage tank and a liquid supply unit. The second storage tank preferably stores a second same-type liquid which is a liquid at room temperature and is of the same type as the predetermined liquid. The liquid supply unit preferably mixes the first same-type liquid and the second same-type liquid and supplies the mixed liquid to the discharge unit as a new first same-type liquid. The liquid supply unit preferably includes a heating unit for heating the first same-type liquid stored in the first storage tank.

[0011] In one embodiment, the treatment liquid is a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide solution, and the first identical liquid is preferably sulfuric acid.

[0012] In one embodiment, the treatment solution is preferably an ammonia-hydrogen peroxide mixture obtained by mixing ammonia water, hydrogen peroxide solution, and water, and the first identical liquid is water; or, preferably, the treatment solution is preferably a hydrochloric acid-hydrogen peroxide mixture obtained by mixing hydrochloric acid, hydrogen peroxide solution, and water, and the first identical liquid is water.

[0013] According to another aspect of the present invention, a substrate processing method processes a substrate by discharging a processing liquid, which is a mixture of several types of liquids, onto the substrate. The substrate processing method includes the steps of: discharging the processing liquid, which originates from a predetermined liquid, onto the substrate; discharging a first identical liquid, which is the same type of liquid as the predetermined liquid, onto the substrate before the processing liquid is discharged onto the substrate; and recovering the first identical liquid discharged onto the substrate and supplying the first identical liquid to a first storage tank. The predetermined liquid is one of the several types of liquids used to generate the processing liquid. The temperature of the first identical liquid when it is discharged onto the substrate is higher than room temperature. In the step of discharging the first identical liquid onto the substrate, the first identical liquid stored in the first storage tank is reused. The first identical liquid is not used as any of the several types of liquids.

[0014] In one embodiment, it is preferable that the temperature of the first identical liquid when it is discharged onto the substrate is approximately the same as the temperature of the processing liquid when it is discharged onto the substrate.

[0015] In one embodiment, it is preferable that the temperature of the first identical liquid when it is discharged onto the substrate is higher than the temperature of the predetermined liquid when the processing liquid is generated.

[0016] In one embodiment, in the step of discharging the first identical liquid onto the substrate, it is preferable to mix the heated first identical liquid from the first storage tank with the second identical liquid at room temperature from the second storage tank, and to discharge the resulting mixture onto the substrate as a new first identical liquid. The second identical liquid is preferably the same type of liquid as the predetermined liquid.

[0017] In one embodiment, the treatment liquid is a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide solution, and the first identical liquid is preferably sulfuric acid.

[0018] In one embodiment, the treatment solution is preferably an ammonia-hydrogen peroxide mixture obtained by mixing ammonia water, hydrogen peroxide solution, and water, and the first identical liquid is water; or, preferably, the treatment solution is preferably a hydrochloric acid-hydrogen peroxide mixture obtained by mixing hydrochloric acid, hydrogen peroxide solution, and water, and the first identical liquid is water. [Effects of the Invention]

[0019] According to the present invention, it is possible to reuse the liquid discharged onto the substrate before the processing solution is discharged, while suppressing a decrease in the cleanliness of the processing solution. [Brief explanation of the drawing]

[0020] [Figure 1] This is a schematic side view showing the inside of a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 2] This graph shows the relationship between substrate surface temperature and processing time. [Figure 3]A graph showing the relationship between the resist stripping time and the first sulfuric acid discharge time. [Figure 4] A flowchart showing a substrate processing method executed by the substrate processing apparatus according to Embodiment 1. [Figure 5] A schematic side view showing the inside of the substrate processing apparatus according to a modification of Embodiment 1. [Figure 6] A flowchart showing a substrate processing method executed by the substrate processing apparatus according to a modification of Embodiment 1. [Figure 7] A schematic side view showing the inside of the substrate processing apparatus according to Embodiment 2 of the present invention. [Figure 8] A schematic side view showing the inside of the substrate processing apparatus according to a modification of Embodiment 2.

Embodiments for Carrying Out the Invention

[0021] Hereinafter, embodiments of this invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[0022] In the substrate processing apparatus according to the present invention, the "substrate" to be subjected to substrate processing includes various substrates such as semiconductor wafers (e.g., silicon wafers), glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Hereinafter, mainly, the case where a disk-shaped semiconductor wafer is the object of substrate processing will be taken as an example to describe the embodiments of the present invention, but the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the above-described semiconductor wafers. Also, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0023] (Embodiment 1) A substrate processing apparatus 1 according to Embodiment 1 of the present invention will be described with reference to Figures 1 to 4. Figure 1 is a schematic side view showing the inside of the substrate processing apparatus 1 according to Embodiment 1. The substrate processing apparatus 1 processes the substrate W using a processing liquid. More specifically, the substrate processing apparatus 1 is a single-wafer type apparatus and processes the substrate W one sheet at a time. The processing liquid is, for example, a chemical solution.

[0024] In Embodiment 1, the substrate processing apparatus 1 processes the substrate W by discharging a processing liquid, which is a mixture of multiple types of liquids, onto the substrate W. In this case, before discharging the processing liquid onto the substrate W, the substrate processing apparatus 1 discharges a first identical liquid onto the substrate W. The first identical liquid is the same type of liquid as the predetermined liquid. The predetermined liquid is one of the multiple types of liquids used to generate the processing liquid. The temperature of the first identical liquid is higher than room temperature. Therefore, when processing with the processing liquid is performed after discharging the first identical liquid, the temperature drop of the processing liquid supplied onto the substrate W can be suppressed. As a result, the efficiency of processing the substrate W with the processing liquid can be improved. In other words, the desired processing of the substrate W with the processing liquid can be achieved while reducing the amount of processing liquid used. Note that the processing liquid can be considered as a liquid derived from the predetermined liquid, because the predetermined liquid is one of the multiple types of liquids used to generate the processing liquid.

[0025] In this specification, "room temperature" refers to a temperature of, for example, 20°C to 30°C.

[0026] In the following example, the processing solution is a sulfuric acid hydrogen peroxide mixture (SPM). SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2). In the case of SPM, the multiple types of liquids are sulfuric acid and hydrogen peroxide. Also, as an example, the designated liquid, which is one of the multiple types of liquids, is sulfuric acid. Furthermore, as an example, the first identical liquid is sulfuric acid. Hereafter, sulfuric acid as the designated liquid will be simply referred to as "sulfuric acid," and sulfuric acid as the first identical liquid will be referred to as "first sulfuric acid." It should be noted that SPM can be considered a liquid derived from sulfuric acid, because sulfuric acid is one of the multiple types of liquids used to produce SPM.

[0027] The substrate processing apparatus 1 mixes sulfuric acid and hydrogen peroxide to create SPM, and processes the substrate W with the SPM. In Embodiment 1, the substrate processing apparatus 1 supplies SPM to the substrate W to peel off the resist film from the substrate W. In this case, the substrate processing apparatus 1 discharges first sulfuric acid onto the substrate W before discharging the processing solution onto the substrate W. The temperature of the first sulfuric acid is higher than room temperature. Therefore, the temperature drop of the SPM supplied onto the substrate W during the SPM processing performed after the discharge of the first sulfuric acid can be suppressed. As a result, the efficiency of processing the substrate W with SPM can be improved. In other words, the desired processing (peeling off the resist film) can be achieved on the substrate W with SPM while reducing the amount of SPM used.

[0028] Specifically, as shown in Figure 1, the substrate processing apparatus 1 comprises a chamber 1a, a spin chuck 10, a chemical nozzle 20, a chemical nozzle moving mechanism 30, a hydrogen peroxide supply unit 40, a sulfuric acid supply unit 50, a similar liquid supply unit 200, an opposing member 60, a first lifting unit 70, a rinse liquid supply unit 80, a liquid receiving unit 90, a second lifting unit 100, a recovery unit 110, a waste unit 120, and a control device 500.

[0029] Chamber 1a has an internal space. In the example shown in Figure 1, chamber 1a houses a spin chuck 10, a chemical nozzle 20, a chemical nozzle moving mechanism 30, part of a hydrogen peroxide supply unit 40, part of a sulfuric acid supply unit 50, part of a similar liquid supply unit 200, an opposing member 60, a first lifting unit 70, part of a rinse liquid supply unit 80, a liquid receiving unit 90, and a second lifting unit 100. The spin chuck 10 corresponds to an example of the "substrate holding unit" of the present invention. The chemical nozzle 20 corresponds to an example of the "discharge unit" of the present invention.

[0030] The spin chuck 10 holds and rotates the substrate W. Specifically, the spin chuck 10 holds a single substrate W in a horizontal position and rotates the substrate W around a vertical axis of rotation AX1 that passes through the center of the substrate W. The spin chuck 10 employs a clamping type chuck that holds the substrate W horizontally by clamping it in the horizontal direction.

[0031] Specifically, the spin chuck 10 includes a spin motor M, a spin shaft 11, a spin base 12, and a plurality of clamping members 13. The spin shaft 11 is integrated with the drive shaft of the spin motor M. The spin base 12 is substantially disc-shaped. The spin base 12 is mounted substantially horizontally on the upper end of the spin shaft 11. A plurality of clamping members 13 are arranged on the upper surface of the spin base 12. The plurality of clamping members 13 are arranged at intervals on a circumference corresponding to the outer shape of the substrate W at the peripheral edge of the upper surface of the spin base 12. The plurality of clamping members 13 clamp the peripheral end surface of the substrate W. The spin motor M rotates the spin base 12 around the rotation axis AX1, thereby rotating the substrate W, which is clamped by the plurality of clamping members 13, around the rotation axis AX1.

[0032] When processing the substrate W (i.e., when stripping the resist film from the substrate W), the chemical nozzle 20 discharges SPM onto the rotating substrate W. SPM is an example of the "processing liquid" of the present invention.

[0033] When the chemical nozzle 20 discharges SPM onto the substrate W, the hydrogen peroxide supply unit 40 supplies hydrogen peroxide to the chemical nozzle 20. Specifically, the hydrogen peroxide supply unit 40 includes a hydrogen peroxide storage tank 43 and a supply unit 45. The hydrogen peroxide storage tank 43 stores hydrogen peroxide. The supply unit 45 supplies the hydrogen peroxide stored in the hydrogen peroxide storage tank 43 to the chemical nozzle 20.

[0034] The supply unit 45 includes a valve 41, a pump 42, and piping 44.

[0035] One end of the pipe 44 is connected to the chemical nozzle 20. The pipe 44 extends from the chemical nozzle 20 to the hydrogen peroxide storage tank 43.

[0036] Valve 41 is located in piping 44. Valve 41 opens and closes the flow path in piping 44. Untemperature-controlled hydrogen peroxide solution at room temperature is supplied to piping 44 from hydrogen peroxide storage tank 43. When valve 41 is opened, hydrogen peroxide solution is supplied from piping 44 to the chemical nozzle 20. Hydrogen peroxide solution is an example of "other liquids among the multiple types of liquids" in this invention.

[0037] When the chemical nozzle 20 discharges SPM onto the substrate W, the sulfuric acid supply unit 50 supplies sulfuric acid (specifically, fresh sulfuric acid) to the chemical nozzle 20. Specifically, the sulfuric acid supply unit 50 includes a sulfuric acid storage tank 54 and a supply unit 57. The sulfuric acid storage tank 54 stores sulfuric acid (specifically, fresh sulfuric acid). The supply unit 57 supplies the sulfuric acid stored in the sulfuric acid storage tank 54 to the chemical nozzle 20.

[0038] The sulfuric acid storage tank 54 corresponds to an example of the "predetermined liquid storage tank" of the present invention. The sulfuric acid stored in the sulfuric acid storage tank 54 (specifically, fresh sulfuric acid) corresponds to an example of the "predetermined liquid" of the present invention.

[0039] The supply unit 57 includes a valve 51, a heating unit 52, a pump 53, common piping 55, and piping 56.

[0040] One end of the common pipe 55 is connected to the chemical nozzle 20. The other end of the common pipe 55 is connected to one end of pipe 56. The other end of pipe 56 extends to the sulfuric acid storage tank 54. A pump 53, a heating unit 52, and a valve 51 are arranged in this order from upstream to downstream in pipe 56.

[0041] Pump 53 delivers sulfuric acid stored in sulfuric acid storage tank 54 to pipe 56. In other words, pump 53 supplies sulfuric acid stored in sulfuric acid storage tank 54 to pipe 56. Heating unit 52 heats the sulfuric acid flowing through pipe 56 to set the temperature of the sulfuric acid to the target temperature T0. Valve 51 opens and closes the flow path of pipe 56. The target temperature T0 is higher than room temperature. Heating unit 52 is, for example, a heater.

[0042] The piping 56 branches off between the heating unit 52 and the valve 51 and connects to the sulfuric acid storage tank 54. When the valve 51 is closed, the sulfuric acid heated by the heating unit 52 circulates between the sulfuric acid storage tank 54 and the heating unit 52. Therefore, the temperature of the sulfuric acid stored in the sulfuric acid storage tank 54 is set to the target temperature T0.

[0043] When valve 51 is opened, sulfuric acid set to the target temperature T0 is supplied from pipe 56 to common pipe 55, and then from common pipe 55 to chemical nozzle 20.

[0044] Sulfuric acid supplied from the sulfuric acid storage tank 54 to the chemical nozzle 20 and hydrogen peroxide supplied from the hydrogen peroxide storage tank 43 to the chemical nozzle 20 are mixed inside the chemical nozzle 20 to generate SPM. The chemical nozzle 20 then discharges the SPM onto the rotating substrate W. As a result, the substrate W is treated by the SPM. In other words, the resist film on the substrate W is peeled off by the SPM.

[0045] When the chemical nozzle 20 dispenses SPM onto the substrate W, the valve 201 is closed. The temperature of the SPM dispensed from the chemical nozzle 20 is, for example, between 100°C and 200°C.

[0046] The chemical nozzle 20 discharges primary sulfuric acid onto the substrate W before discharging SPM onto the substrate W. When the chemical nozzle 20 discharges primary sulfuric acid onto the substrate W, valves 41 and 51 are closed.

[0047] When the chemical nozzle 20 discharges the first sulfuric acid onto the substrate W, the same-type liquid supply unit 200 supplies the first sulfuric acid. Specifically, the same-type liquid supply unit 200 supplies the first sulfuric acid to the chemical nozzle 20.

[0048] The same-type liquid supply unit 200 includes a supply unit 206 and a first storage tank 204. The supply unit 206 supplies the first sulfuric acid stored in the first storage tank 204 to the chemical nozzle 20. The first storage tank 204 stores the first sulfuric acid.

[0049] The first sulfuric acid stored in the first storage tank 204 corresponds to an example of the "first identical liquid" of the present invention.

[0050] The supply unit 206 includes a valve 201, a heating unit 202, a pump 203, and piping 205.

[0051] One end of the common pipe 55 is connected to the chemical nozzle 20. The other end of the common pipe 55 is connected to one end of pipe 205. The other end of pipe 205 extends to the first storage tank 204. The pump 203, heating unit 202, and valve 201 are arranged in this order from upstream to downstream in pipe 205.

[0052] Pump 203 delivers the first sulfuric acid stored in the first storage tank 204 to the pipe 205. In other words, pump 203 supplies the first sulfuric acid stored in the first storage tank 204 to the pipe 205. Heating unit 202 heats the first sulfuric acid flowing through pipe 205 to set the temperature of the first sulfuric acid to the target temperature T1. Valve 201 opens and closes the flow path of pipe 205. Heating unit 202 is, for example, a heater.

[0053] The piping 205 branches off between the heating unit 202 and the valve 201 and connects to the first storage tank 204. When the valve 201 is closed, the sulfuric acid heated by the heating unit 202 circulates between the first storage tank 204 and the heating unit 202. Therefore, the temperature of the first sulfuric acid stored in the first storage tank 204 is set to the target temperature T1. The target temperature T1 is higher than room temperature.

[0054] When valve 201 is opened with valves 41 and 51 closed, the first sulfuric acid, set to the target temperature T1, is supplied from pipe 205 to common pipe 55, and then from common pipe 55 to chemical nozzle 20. As a result, the chemical nozzle 20 discharges the first sulfuric acid onto the substrate W before discharging the SPM onto the substrate W. Therefore, before discharging the SPM onto the substrate W, the surface of the substrate W and the chemical nozzle 20 are temperature-controlled to a temperature higher than room temperature. In other words, the surface of the substrate W and the chemical nozzle 20 are preheated before discharging the SPM onto the substrate W. As a result, the temperature drop of the SPM supplied to the substrate W during the SPM treatment performed after discharging the first sulfuric acid can be suppressed.

[0055] The chemical nozzle moving mechanism 30 moves the chemical nozzle 20 along a horizontal plane. The chemical nozzle moving mechanism 30 moves the chemical nozzle 20 between a retracted position and a processing position. The retracted position is outside the spin chuck 10. In Embodiment 1, the processing position is opposite the center of the substrate W. The chemical nozzle 20 supplies first sulfuric acid or SPM to the substrate W from the processing position.

[0056] The liquid nozzle moving mechanism 30 includes a nozzle arm 31, a nozzle base 32, and a nozzle moving section 33. The nozzle base 32 extends vertically. The base end of the nozzle arm 31 is connected to the nozzle base 32. The nozzle arm 31 extends horizontally from the nozzle base 32.

[0057] The nozzle arm 31 supports the chemical nozzle 20. The chemical nozzle 20 protrudes vertically downward from the nozzle arm 31. The chemical nozzle 20 is positioned at the tip of the nozzle arm 31.

[0058] The nozzle moving unit 33 rotates the nozzle base 32 about a rotation axis AX2 that extends vertically. As a result, the chemical nozzle 20 moves along the circumferential direction about the rotation axis AX2. The nozzle moving unit 33 can also raise or lower the nozzle base 32. As a result, the chemical nozzle 20 rises or falls. The nozzle moving unit 33 includes, for example, a motor for rotating the nozzle base 32. The nozzle moving unit 33 also includes, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism in order to raise and lower the nozzle base 32.

[0059] The opposing member 60 faces the substrate W. More specifically, the opposing member 60 is positioned above the substrate W. The opposing member 60 supplies rinse liquid to the rotating substrate W. Specifically, the opposing member 60 includes a rinse liquid nozzle 61. The rinse liquid nozzle 61 supplies rinse liquid to the rotating substrate W. In other words, the rinse liquid nozzle 61 discharges rinse liquid toward the rotating substrate W.

[0060] Specifically, the rinse liquid supply unit 80 supplies rinse liquid to the rinse liquid nozzle 61. The rinse liquid supply unit 80 includes a valve 81 and a pipe 82. The pipe 82 is connected to the rinse liquid nozzle 61. The valve 81 is located in the pipe 82. The valve 81 opens and closes the flow path of the pipe 82. Rinse liquid is supplied to the pipe 82 from a rinse liquid supply source (not shown). When the valve 81 is opened, rinse liquid is supplied from the pipe 82 to the rinse liquid nozzle 61. As a result, the rinse liquid nozzle 61 discharges rinse liquid toward the rotating substrate W.

[0061] The rinsing solution is deionized water (DIW), also known as "pure water." However, the rinsing solution is not limited to deionized water. For example, the rinsing solution may be carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).

[0062] The first lifting unit 70 raises and lowers the opposing member 3. Specifically, the first lifting unit 70 raises and lowers the opposing member 60 between a processing position and a retracted position. The retracted position is a position above the processing position. The processing position is a position closer to the substrate W than the retracted position. The first lifting unit 70 includes, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The opposing member 60 (rinse liquid nozzle 61) supplies rinse liquid from the processing position to the substrate W. At the processing position, the opposing member 60 covers the substrate W from above.

[0063] The liquid receiving section 90 receives liquid (SPM, primary sulfuric acid, or rinsing solution) that splashes from the substrate W. Specifically, the liquid receiving section 90 has a first guard 91, a first cup 94, a second guard 92, a second cup 95, and a third guard 93.

[0064] The first guard 91 is substantially cylindrical in shape and surrounds the spin chuck 10, and is positioned around the spin chuck 10. In Embodiment 1, the first guard 91 catches the first sulfuric acid that is scattered from the rotating substrate W.

[0065] The first cup 94 is positioned on the lower end side of the first guard 91. The first cup 94 forms an annular groove below the lower end of the first guard 91. In Embodiment 1, the first cup 94 collects the first sulfuric acid that flows down from the inner circumferential surface of the first guard 91. The first sulfuric acid collected in the first cup 94 is recovered by a recovery unit 110 connected to the bottom of the first cup 94.

[0066] The second guard 92 is substantially cylindrical in shape and surrounds the first guard 91, and is positioned around the first guard 91. In Embodiment 1, the second guard 92 catches the SPM scattered from the rotating substrate W.

[0067] The second cup 95 is positioned on the lower end side of the second guard 92. The second cup 95 forms an annular groove below the lower end of the second guard 92. The second cup 95 collects SPM that flows down from the inner circumferential surface of the second guard 92.

[0068] The SPM collected in the second cup 95 is discarded by a waste section 120 connected to the bottom of the second cup 95. The waste section 120 includes a waste unit 121 and a drain pipe 122. The drain pipe 122 is connected to the bottom of the second cup 95 and extends to the waste unit 121. The SPM collected in the second cup 95 flows into the drain pipe 122. The SPM is then supplied from the drain pipe 122 to the waste unit 121. As a result, the waste unit 121 discards the SPM.

[0069] The third guard 93 is roughly cylindrical in shape and surrounds the second guard 92, and is positioned around the second guard 92. The third guard 93 is capable of receiving liquid splashes from the rotating substrate W.

[0070] The second lifting unit 100 raises and lowers the first guard 91, the second guard 92, and the third guard 93 individually. The second lifting unit 100 is controlled by the control unit 501. The second lifting unit 100 includes, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

[0071] Specifically, the second lifting unit 100 switches between a retracted state in which the upper ends of the first guard 91, the second guard 92, and the third guard 93 are positioned below the substrate W, a first opposing state in which the first guard 91 faces the peripheral edge surface of the substrate W (as shown in Figure 1), a second opposing state in which the second guard 92 faces the peripheral edge surface of the substrate W, and a third opposing state in which the third guard 93 faces the peripheral edge surface of the substrate W.

[0072] More specifically, in the first opposing state of the liquid receiving section 90, the first guard 91, the second guard 92, and the third guard 93 are positioned in the upper position (processing height position) (Figure 1). In the first opposing state, as an example, the first guard 91 receives the first sulfuric acid splashed from the substrate W.

[0073] In the second opposing state of the liquid receiving section 90, the second guard 92 and the third guard 93 are positioned in the upper position, and the first guard 91 is positioned in the lower position. In the second opposing state, as an example, the second guard 92 receives the SPM scattered from the substrate W.

[0074] In the third opposing state of the liquid receiving section 90, the third guard 93 is positioned in the upper position, and the first guard 91 and the second guard 92 are positioned in the lower position. In the retracted state of the liquid receiving section 90, the first guard 91, the second guard 92, and the third guard 93 are positioned in the lower position.

[0075] The recovery unit 110 recovers the first sulfuric acid discharged onto the substrate W and supplies the first sulfuric acid to the first storage tank 204. Specifically, the recovery unit 110 recovers the first sulfuric acid scattered from the substrate W via the first guard 91 and the first cup 94.

[0076] The recovery unit 110 includes a recovery pump 111 and a recovery pipe 112. The recovery pipe 112 is connected to the bottom of the first cup 94 and extends to the first storage tank 204. The recovery pump 111 is located in the recovery pipe 112. The recovery pump 111 delivers the first sulfuric acid recovered from the first cup 94 to the first storage tank 204. As a result, the first sulfuric acid recovered by the recovery unit 110 is stored in the first storage tank 204 and reused. In other words, the recovered first sulfuric acid is reused to preheat the chemical nozzle 20 and the surface of the substrate W before discharging the SPM onto the substrate W.

[0077] When the chemical nozzle 20 discharges the first sulfuric acid, valves 41 and 51 are closed. Therefore, the first sulfuric acid stored in the first storage tank 204 is used only to preheat the chemical nozzle 20 and the surface of the substrate W before discharging the SPM onto the substrate W. In other words, the first sulfuric acid stored in the first storage tank 204 is not used as one of the liquids used to generate the SPM. In other words, the first sulfuric acid stored in the first storage tank 204 is not used as sulfuric acid to generate the SPM. Thus, the recovered first sulfuric acid is not supplied to the sulfuric acid storage tank 54 and is not mixed with the sulfuric acid in the sulfuric acid storage tank 54.

[0078] Therefore, it is possible to prevent the purity of the sulfuric acid used to generate SPM (sulfuric acid stored in the sulfuric acid storage tank 54) from decreasing due to the first sulfuric acid. In other words, it is possible to prevent the purity of the SPM from decreasing due to the first sulfuric acid. To put it another way, according to Embodiment 1, it is possible to reuse the first sulfuric acid discharged onto the substrate W before the SPM is discharged, while suppressing the decrease in the purity of the SPM.

[0079] In other words, according to Embodiment 1, it is possible to reuse the first identical liquid (liquid) that was discharged onto the substrate W before the processing liquid was discharged, while suppressing a decrease in the cleanliness of the processing liquid.

[0080] The control device 500 controls the operation of each part of the substrate processing apparatus 1. The control device 500 is, for example, a computer. Specifically, the control device 500 includes a control unit 501 and a storage unit 502.

[0081] The control unit 501 controls the operation of each part of the substrate processing apparatus 1 based on various information stored in the memory unit 502. For example, the control unit 501 controls the spin chuck 10, the chemical nozzle moving mechanism 30, the hydrogen peroxide supply unit 40, the sulfuric acid supply unit 50, the same liquid supply unit 200, the first lifting unit 70, the rinse liquid supply unit 80, the second lifting unit 100, the recovery unit 110, and the waste disposal unit 120 based on various information stored in the memory unit 502.

[0082] The control unit 501 may have, for example, a processor. The control unit 501 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as its processor. Alternatively, the control unit 501 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0083] The memory unit 502 stores various information for controlling the operation of the substrate processing apparatus 1. Specifically, the memory unit 502 includes a memory device and stores data and computer programs as various information. The processor of the control unit 501 controls the operation of each part of the substrate processing apparatus 1 by executing the computer programs stored in the memory device of the memory unit 502. The various information (data) includes recipe data. The recipe data indicates a recipe that defines the processing content, processing conditions, and processing procedure for the substrate W.

[0084] More specifically, the storage unit 502 has a main memory. The main memory is, for example, a semiconductor memory. The storage unit 502 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 502 may also include removable media. The storage unit 502 corresponds to an example of a non-temporary computer-readable storage medium.

[0085] As described above with reference to Figure 1, according to Embodiment 1, the chemical nozzle 20 discharges the first sulfuric acid supplied from the same-type liquid supply unit 200 onto the substrate W before the SPM is discharged onto the substrate W. In this case, the temperature of the first sulfuric acid is higher than room temperature. Therefore, the temperature of the chemical nozzle 20 rises due to the first sulfuric acid before the SPM is discharged. In addition, the surface temperature of the substrate W rises due to the first sulfuric acid before the SPM is discharged. As a result, the decrease in the temperature of the SPM at the start of processing the substrate W by the SPM can be suppressed. Thus, the peeling performance of the resist film by the SPM can be improved. Peeling performance refers to the amount of resist film peeled per unit time. Improving the peeling performance of the resist film by the SPM reduces the amount of SPM used. In other words, the amount of SPM waste can be reduced.

[0086] Furthermore, in Embodiment 1, it is preferable that the temperature of the first sulfuric acid when discharging the first sulfuric acid onto the substrate W is approximately the same as the temperature of the SPM when discharging the SPM onto the substrate W. According to this preferred example, the power consumption used by the heating unit 202 can be reduced compared to the case where the temperature of the first sulfuric acid is higher than the temperature of the SPM.

[0087] Furthermore, in Embodiment 1, it is preferable that the temperature of the first sulfuric acid when discharging it onto the substrate W is higher than the temperature of the sulfuric acid used to generate the SPM. In this preferred example, compared to the case where the temperature of the first sulfuric acid is lower than the temperature of the sulfuric acid used to generate the SPM, the temperature of the chemical nozzle 20 and the surface temperature of the substrate W can be increased before the SPM is discharged. As a result, the decrease in the temperature of the SPM at the start of processing the substrate W by the SPM can be further suppressed. Therefore, the peeling performance of the resist film by the SPM can be further improved. In addition, in this preferred example, the generation of fumes can be suppressed.

[0088] For example, the temperature of the first sulfuric acid when it is dispensed onto the substrate W is 150°C, and the temperature of the sulfuric acid when SPM is produced is 100°C.

[0089] Next, we will explain the time course of the surface temperature of the substrate W with reference to Figure 2. Figure 2 is a graph showing the relationship between the surface temperature T of the substrate W and the processing time t by SPM. The vertical axis represents the surface temperature T (°C) of the substrate W. The horizontal axis represents the processing time t (seconds) of the substrate W by SPM. In other words, the horizontal axis shows the elapsed time t from the moment when the discharge of SPM towards the substrate W started (0 seconds).

[0090] In Figure 2, curve A1 shows the surface temperature of the substrate W in Embodiment 1. Specifically, curve A1 shows the time change in the surface temperature of the substrate W when the first sulfuric acid is dispensed onto the substrate W before the SPM treatment, and then the SPM is dispensed onto the substrate W. Curve A2 shows the surface temperature of the substrate W in the comparative example. Specifically, curve A2 shows the time change in the surface temperature of the substrate W when the first sulfuric acid is not dispensed onto the substrate W before the SPM treatment, and then the SPM is dispensed onto the substrate W.

[0091] As can be seen from comparing curves A1 and A2, the surface temperature of substrate W when primary sulfuric acid is dispensed onto substrate W before SPM processing is higher than the surface temperature of substrate W when primary sulfuric acid is not dispensed before SPM processing. In other words, when primary sulfuric acid is dispensed onto substrate W before SPM processing is dispensed, the surface temperature of substrate W rises faster compared to when primary sulfuric acid is not dispensed before SPM processing.

[0092] In particular, at the time when SPM discharge is started (0 seconds) and in the vicinity thereof, if the first sulfuric acid is discharged onto the substrate W before processing with SPM, the surface temperature of the substrate W is significantly higher compared to when the first sulfuric acid is not discharged onto the substrate W.

[0093] Next, the peeling time of the resist film on the substrate W will be explained with reference to Figure 3. Figure 3 is a graph showing the relationship between the peeling time of the resist film formed on the substrate W and the discharge time of the first sulfuric acid. The vertical axis shows the peeling time of the resist film by SPM (seconds). The horizontal axis shows the discharge time of the first sulfuric acid (seconds).

[0094] In Figure 3, a first sulfuric acid discharge time of 0 seconds indicates that the first sulfuric acid was not discharged onto the substrate W before processing with SPM. In other words, a first sulfuric acid discharge time of 0 seconds represents the comparative example. In the comparative example, the peeling time of the resist film by SPM processing was approximately 85 seconds.

[0095] On the other hand, when primary sulfuric acid was discharged before SPM treatment, the peeling time of the resist film by SPM was shortened compared to when primary sulfuric acid was not discharged before SPM treatment (0 seconds). In other words, the present invention illustrates the case where primary sulfuric acid is discharged before SPM treatment. For example, when primary sulfuric acid was discharged for 20 seconds before SPM treatment, the peeling time of the resist film by SPM treatment was approximately 75 seconds. In this case, the peeling time of the resist film by SPM was shortened by approximately 10 seconds compared to when primary sulfuric acid was not discharged before SPM treatment.

[0096] As explained above with reference to Figure 3, in this embodiment, the peeling time of the resist film by SPM was shortened compared to the comparative example. In other words, the peeling performance of the resist film was improved in this embodiment. One reason why the peeling performance of the resist film can be improved is that, as shown in Figure 2, by discharging the first sulfuric acid onto the substrate W before processing with SPM, the surface temperature of the substrate W has already risen at the start of SPM discharging (0 seconds), which suppresses the temperature drop of the SPM on the surface of the substrate W. Another reason why the peeling performance of the resist film can be improved is that by discharging the first sulfuric acid onto the substrate W before processing with SPM, the temperature of the chemical nozzle 20 rises at the start of SPM discharging (0 seconds), which suppresses the temperature drop of the SPM when it is discharged from the chemical nozzle 20.

[0097] Next, with reference to Figures 1 and 4, a substrate processing method according to Embodiment 1 will be described. The substrate processing method is performed in a substrate processing apparatus 1. In other words, the substrate processing method processes the substrate W by discharging SPM, which is a mixture of multiple types of liquids (sulfuric acid and hydrogen peroxide), onto the substrate W.

[0098] Figure 4 is a flowchart showing the substrate processing method according to Embodiment 1. As shown in Figure 4, the substrate processing method includes steps S1 to S10.

[0099] As shown in Figure 4, first, in step S1, the control unit 501 controls the robot (not shown) to load the substrate W into the substrate processing apparatus 1. As a result, the robot loads the substrate W into the substrate processing apparatus 1.

[0100] Next, in step S2, the control unit 501 controls the spin chuck 10 to rotate the substrate W. As a result, the spin chuck 10 rotates the substrate W.

[0101] Next, processes S3 and S4 are executed in parallel.

[0102] In step S3, the control unit 501 controls the same-liquid supply unit 200 (valve 201) so that the chemical nozzle 20 discharges the first sulfuric acid from the first storage tank 204 onto the substrate W. As a result, valve 201 opens and the first sulfuric acid is supplied to the chemical nozzle 20. Thus, the chemical nozzle 20 discharges the first sulfuric acid onto the substrate W. The surface of the chemical nozzle 20 and the substrate W are preheated by the first sulfuric acid. Step S3 ends, for example, after 1 hour has elapsed from the start of step S3. In other words, the chemical nozzle 20 discharges the first sulfuric acid onto the substrate W for only 1 hour. Note that in step S3, valves 41, 51, and 81 are closed.

[0103] Meanwhile, in step S4, the control unit 501 controls the recovery unit 110 (recovery pump 111) to recover the first sulfuric acid that has been scattered from the substrate W and collected in the first cup 94. As a result, the recovery pump 111 is driven and the first sulfuric acid is recovered into the first storage tank 204 through the recovery piping 112. Step S4 ends, for example, after two hours have elapsed from the start of step S4. The second hour may be, for example, approximately the same as the first hour, or it may be longer than the first hour.

[0104] Once processes S3 and S4 are completed, the process proceeds to process S5. However, even if process S4 is not completed, the process can proceed to process S5 as long as process S3 is completed.

[0105] Next, in step S5, the control unit 501 controls the hydrogen peroxide supply unit 40 (valve 41) and the sulfuric acid supply unit 50 (valve 51) so that the chemical nozzle 20 discharges SPM onto the substrate W. As a result, valves 41 and 51 are opened, and hydrogen peroxide from the hydrogen peroxide storage tank 43 is supplied to the chemical nozzle 20, as well as sulfuric acid from the sulfuric acid storage tank 54. Thus, the hydrogen peroxide and sulfuric acid are mixed inside the chemical nozzle 20, and SPM is generated. The chemical nozzle 20 then discharges the SPM onto the substrate W. As a result, the resist film is removed from the substrate W. Step S5 ends, for example, after 3 hours have elapsed from the start of step S5. In other words, the chemical nozzle 20 discharges SPM onto the substrate W for only 3 hours. Note that in step S5, valves 81 and 201 are closed.

[0106] Next, in step S6, the control unit 501 controls the rinse liquid supply unit 80 (valve 81) to supply rinse liquid to the substrate W. As a result, valve 81 opens and rinse liquid is supplied to rinse liquid nozzle 61. Therefore, rinse liquid nozzle 61 discharges rinse liquid onto the substrate W. The rinse liquid washes away the SPM and residue of the resist film. Step S6 ends, for example, after 4 hours have elapsed from the start of step S6. In other words, the rinse liquid nozzle 61 discharges rinse liquid onto the substrate W for only 4 hours. Note that in step S6, valves 41, 51, and 201 are closed.

[0107] Next, in step S7, the control unit 501 controls the spin motor M to accelerate the substrate W to a drying rotation speed greater than the rotation speed from steps S3 to S6, and rotates the substrate W at the drying rotation speed. This applies a large centrifugal force to the rinsing liquid on the substrate W, causing the rinsing liquid adhering to the substrate W to be shaken off around the substrate W. In this way, the rinsing liquid is removed from the substrate W and the substrate W is dried.

[0108] Next, in step S8, the control unit 501 controls the spin chuck 10 to stop the rotation of the substrate W. As a result, the spin chuck 10 stops the rotation of the substrate W.

[0109] Next, in step S9, the control unit 501 controls the robot (not shown) to remove the substrate W from the substrate processing apparatus 1. As a result, the robot removes the substrate W from the substrate processing apparatus 1.

[0110] Next, in step S10, it is determined whether or not processing has been completed for all substrates W to be processed.

[0111] If it is determined in step S10 that processing has not been completed for all substrates W to be processed (No), the process proceeds to step S1.

[0112] On the other hand, if it is determined in step S10 that processing has been completed for all substrates W to be processed (Yes), the substrate processing method is terminated.

[0113] As described above with reference to Figure 4, according to the substrate processing method of Embodiment 1, in step S5, SPM is discharged onto the substrate W. SPM is derived from sulfuric acid. In particular, in Embodiment 1, in step S3, first sulfuric acid, which is the same type of liquid as sulfuric acid, is discharged onto the substrate W before the SPM is discharged onto the substrate W. The temperature of the first fluid when it is discharged onto the substrate W is higher than room temperature. On the other hand, in step S4, the first sulfuric acid discharged onto the substrate W is recovered and supplied to the first storage tank 204. Therefore, in step S5, when the first sulfuric acid is discharged onto the substrate W, the first sulfuric acid stored in the first storage tank 204 is reused. In this case, the first sulfuric acid is not used as one of the liquids among the multiple types of liquids used to generate SPM.

[0114] Therefore, it is possible to prevent the purity of the sulfuric acid used to generate SPM (sulfuric acid stored in the sulfuric acid storage tank 54) from decreasing due to the first sulfuric acid. In other words, it is possible to prevent the purity of the SPM from decreasing due to the first sulfuric acid. To put it another way, according to the substrate processing method of Embodiment 1, it is possible to reuse the first sulfuric acid discharged onto the substrate W before the discharge of the SPM while suppressing the decrease in the purity of the SPM.

[0115] In other words, according to the substrate processing method of Embodiment 1, it is possible to reuse the first identical liquid (liquid) that was discharged onto the substrate W before the processing liquid was discharged, while suppressing a decrease in the cleanliness of the processing liquid.

[0116] (Modified version of Embodiment 1) A modified version of Embodiment 1 will be described with reference to Figures 5 and 6. The modified version differs from Embodiment 1 in that the temperature of the first sulfuric acid is adjusted by the second sulfuric acid at room temperature. The differences between the modified version and Embodiment 1 will be described below.

[0117] Figure 5 is a schematic side view showing the interior of a substrate processing apparatus 1 according to a modified embodiment of Embodiment 1. As shown in Figure 5, the substrate processing apparatus 1 according to the modified embodiment includes a similar liquid supply unit 200A instead of the similar liquid supply unit 200 in Figure 1. The similar liquid supply unit 200A includes a first storage tank 204, a second storage tank 214, and a liquid supply unit 219. The liquid supply unit 219 includes a heating unit 202. Specifically, the supply unit 206A of the liquid supply unit 219 includes the heating unit 202.

[0118] The second storage tank 214 stores a second identical liquid. The second identical liquid is a liquid at room temperature. The second identical liquid is the same type of liquid as the predetermined liquid. The predetermined liquid is one of several types of liquids used to generate the processing liquid.

[0119] In the following modified example, the processing liquid is SPM. The specified liquid is one of several types of liquids used to generate SPM. In the modified example, the specified liquid is sulfuric acid stored in the sulfuric acid storage tank 54. Therefore, the second identical liquid is a liquid of the same type as sulfuric acid. In other words, the second identical liquid is sulfuric acid. Hereafter, sulfuric acid as the second identical liquid will be referred to as "second sulfuric acid".

[0120] The heating unit 202 heats the first sulfuric acid stored in the first storage tank 204. The liquid supply unit 219 mixes the first sulfuric acid heated by the heating unit 202 with the second sulfuric acid at room temperature, and supplies the resulting liquid as new first sulfuric acid to the chemical nozzle 20. In a modified version, the temperature of the new first sulfuric acid supplied to the chemical nozzle 20 can be easily adjusted by mixing the heated first sulfuric acid with the second sulfuric acid at room temperature.

[0121] In detail, the liquid supply unit 219 of the seed liquid supply unit 200A includes supply unit 206A and supply unit 216.

[0122] The supply unit 206A adjusts the flow rate of the first sulfuric acid supplied to the pipe 205. In other words, the supply unit 206A adjusts the flow rate of the first sulfuric acid that is mixed with the second sulfuric acid. The first sulfuric acid supplied by the supply unit 206A is heated by the heating unit 202.

[0123] Specifically, the supply unit 206A includes, in addition to the configuration of the supply unit 206 in Figure 1, a flow control valve 207 and a flow meter 208. The pump 203, heating unit 202, flow meter 208, flow control valve 207, and valve 201 are arranged in this order from upstream to downstream in the piping 205.

[0124] The flow meter 208 detects the flow rate of the first sulfuric acid flowing through the pipe 205. The flow control valve 207 adjusts the opening of the pipe 205 to regulate the flow rate of the first sulfuric acid flowing through the pipe 205. In other words, the flow control valve 207 regulates the flow rate of the first sulfuric acid that mixes with the second sulfuric acid.

[0125] The supply unit 216 adjusts the flow rate of the secondary sulfuric acid supplied to the piping 215. In other words, the supply unit 216 adjusts the flow rate of the secondary sulfuric acid mixed with the first sulfuric acid. The temperature of the secondary sulfuric acid supplied by the supply unit 216 is room temperature. The second storage tank 214 stores the secondary sulfuric acid.

[0126] The sulfuric acid stored in the second storage tank 214 corresponds to an example of the "second identical liquid" of the present invention.

[0127] The supply unit 216 includes a valve 201, a flow control valve 217, a flow meter 218, a pump 213, and piping 215.

[0128] One end of pipe 215 is connected to pipe 205. The other end of pipe 215 extends to the second storage tank 214. A pump 213, a flow meter 218, a flow control valve 217, and a valve 211 are arranged in this order from upstream to downstream in pipe 215.

[0129] Pump 213 delivers the second sulfuric acid stored in the second storage tank 214 to the pipe 215. In other words, pump 213 supplies the second sulfuric acid stored in the second storage tank 214 to the pipe 215. Flow meter 218 detects the flow rate of the second sulfuric acid flowing through the pipe 215. Flow control valve 217 adjusts the opening of the pipe 215 to adjust the flow rate of the second sulfuric acid flowing through the pipe 215. In other words, flow control valve 217 adjusts the flow rate of the second sulfuric acid mixed with the first sulfuric acid. Valve 211 opens and closes the flow path of the pipe 215.

[0130] With valves 41 and 51 closed, when valves 201 and 211 are opened, the first sulfuric acid from the first storage tank 204, set to a target temperature T1, and the second sulfuric acid from the second storage tank 214, at room temperature, are mixed in piping 205. As a result, the temperature of the mixture is adjusted according to the mixing ratio of the first and second sulfuric acids. The mixture is supplied to the common piping 55 as new first sulfuric acid, and further supplied to the chemical nozzle 20.

[0131] In this case, the control unit 501 controls the flow rate adjustment valve 207 to adjust the flow rate of the first sulfuric acid. The control unit 501 also controls the flow rate adjustment valve 217 to adjust the flow rate of the second sulfuric acid.

[0132] Specifically, the control unit 501 controls the flow rate adjustment valves 207 and 217 to adjust the ratio of the flow rate of the second sulfuric acid to the flow rate of the first sulfuric acid. In other words, the control unit 501 controls the flow rate adjustment valves 207 and 217 to adjust the mixing ratio of the first sulfuric acid and the second sulfuric acid.

[0133] Next, a modified substrate processing method will be described with reference to Figures 5 and 6. Figure 6 is a flowchart showing a substrate processing method performed by a substrate processing apparatus according to a modified embodiment of Embodiment 1. As shown in Figure 6, the substrate processing method includes steps S21 to S30.

[0134] Processes S21 and S22 are the same as processes S1 and S2 shown in Figure 4, respectively. Process S24 is the same as process S4 shown in Figure 4. Furthermore, processes S25 to S30 are the same as processes S5 to S10 shown in Figure 4, respectively.

[0135] In the modified example, steps S23 and S24 are executed in parallel after step S22.

[0136] In step S23, the control unit 501 controls the liquid supply unit 219 (valves 201, 211 and flow rate adjustment valves 207, 217) to mix the heated first sulfuric acid from the first storage tank 204 with the room temperature second sulfuric acid from the second storage tank 214, and to discharge the resulting liquid as new first sulfuric acid onto the substrate W. As a result, the flow rate of the first sulfuric acid is adjusted by the flow rate adjustment valve 207 and valve 201 is opened. In addition, the flow rate of the second sulfuric acid is adjusted by the flow rate adjustment valve 217 and valve 211 is opened. Therefore, the heated first sulfuric acid and the room temperature second sulfuric acid are mixed in the piping 205 to produce a mixture with adjusted temperature. This mixture is then supplied as new first sulfuric acid to the chemical nozzle 20 from the common piping 55. As a result, the chemical nozzle 20 discharges the first sulfuric acid onto the substrate W. The first sulfuric acid preheats the chemical nozzle 20 and the surface of the substrate W. Process S23 ends, for example, after 1 hour has elapsed from the start of process S23. In other words, the chemical nozzle 20 dispenses the first sulfuric acid onto the substrate W for only 1 hour. Note that during process S23, valves 41, 51, and 81 are closed.

[0137] Once processes S23 and S24 are completed, the process proceeds to process S25. However, even if process S24 is not completed, the process can proceed to process S25 as long as process S23 is completed.

[0138] As described above with reference to Figure 6, in the modified substrate processing method, in step S23, in which the first sulfuric acid is discharged onto the substrate W, the heated first sulfuric acid from the first storage tank 204 and the room-temperature second sulfuric acid from the second storage tank 214 are mixed, and the resulting liquid is discharged onto the substrate W as new first sulfuric acid. Therefore, according to the modified substrate processing method, the temperature of the new first sulfuric acid supplied to the chemical nozzle 20 can be easily adjusted by adjusting the mixing ratio of the heated first sulfuric acid and the room-temperature second sulfuric acid.

[0139] (Embodiment 2) Referring to Figures 4 and 7, the substrate processing apparatus 1 according to Embodiment 2 of the present invention will be described. Embodiment 2 mainly differs from Embodiment 1 in that SC1 is used as the processing liquid. The differences between Embodiment 2 and Embodiment 1 will be mainly described below.

[0140] Figure 7 is a schematic side view showing the inside of a substrate processing apparatus 1 according to Embodiment 2 of the present invention. The substrate processing apparatus 1 processes a substrate W with a processing liquid which is a mixture of multiple types of liquids.

[0141] In the following example, the treatment solution is an ammonia-hydrogen peroxide mixture (SC1). Hereafter, the ammonia-hydrogen peroxide mixture will be referred to as "SC1". SC1 is a mixture of ammonia water (NH4OH), hydrogen peroxide water (H2O2), and water. In Embodiment 2, the water is deionized water (DIW). In other cases, the water may be the same liquid as the rinsing solution.

[0142] In the case of SC1, the multiple types of liquids are ammonia water, hydrogen peroxide water, and deionized water. Furthermore, as an example, the designated liquid, which is one of the multiple types of liquids used to generate SC1, is deionized water. Additionally, as another example, the first identical liquid, which is the same type as the designated liquid, is deionized water. Hereafter, deionized water as the designated liquid will be simply referred to as "deionized water," and deionized water as the first identical liquid will be referred to as "first deionized water." It should be noted that SC1 can be considered a liquid derived from deionized water, because deionized water is one of the multiple types of liquids used to generate SC1.

[0143] The substrate processing apparatus 1 prepares SC1 by mixing ammonia water, hydrogen peroxide water, and deionized water, and processes the substrate W with SC1. In this case, before discharging the processing solution onto the substrate W, the substrate processing apparatus 1 discharges first deionized water onto the substrate W. The temperature of the first deionized water is higher than room temperature. In other words, the first deionized water is heated. Therefore, the temperature drop of the SC1 supplied onto the substrate W during processing with SC1, which is performed after the discharge of the first deionized water, can be suppressed. As a result, the efficiency of processing the substrate W with SC1 can be improved. That is, the desired processing of the substrate W with SC1 can be achieved while reducing the amount of SC1 used.

[0144] Specifically, as shown in Figure 7, the modified substrate processing apparatus 1 comprises a chemical solution nozzle 20A, an SC1 supply unit 232, and a similar liquid supply unit 200B. The chemical solution nozzle 20A corresponds to an example of the "discharge unit" of the present invention.

[0145] When processing the substrate W, the chemical nozzle 20A discharges SC1 onto the rotating substrate W. SC1 corresponds to an example of the "processing liquid" of the present invention.

[0146] When the chemical nozzle 20A dispenses SC1 onto the substrate W, the SC1 supply unit 232 supplies SC1 to the chemical nozzle 20A.

[0147] The SC1 supply unit 232 includes a mixing valve 230, piping 231, an ammonia water supply unit 130, a hydrogen peroxide water supply unit 140, and a deionized water supply unit 150.

[0148] When the chemical nozzle 20A discharges SC1 onto the substrate W, the ammonia water supply unit 130 supplies ammonia water to the chemical nozzle 20. Specifically, the ammonia water supply unit 130 includes an ammonia storage tank 133 and a supply unit 138. The ammonia storage tank 133 stores ammonia water. The supply unit 138 supplies the ammonia water stored in the ammonia storage tank 133 to the mixing valve 230.

[0149] The supply unit 138 includes a valve 131, a pump 132, and piping 134.

[0150] One end of pipe 134 is connected to a mixing valve 230. Pipe 134 extends from the mixing valve 230 to an ammonia storage tank 133.

[0151] Valve 131 is located in piping 134. Valve 131 opens and closes the flow path in piping 134. Pipe 134 is supplied with, for example, untemperature-controlled ammonia water at room temperature from ammonia storage tank 133. When valve 131 is opened, ammonia water is supplied from piping 134 to the mixing valve 230. Ammonia water is an example of "other liquids among the multiple types of liquids" in this invention.

[0152] When the chemical nozzle 20A discharges SC1 onto the substrate W, the hydrogen peroxide supply unit 140 supplies hydrogen peroxide to the chemical nozzle 20A. Specifically, the hydrogen peroxide supply unit 140 includes a hydrogen peroxide storage tank 143 and a supply unit 148. The hydrogen peroxide storage tank 143 stores hydrogen peroxide. The supply unit 148 supplies the hydrogen peroxide stored in the hydrogen peroxide storage tank 143 to the chemical nozzle 20A.

[0153] The hydrogen peroxide supply unit 140 includes piping 144, a valve 141, and a pump 142.

[0154] One end of pipe 144 is connected to a mixing valve 230. Pipe 144 extends from the mixing valve 230 to a hydrogen peroxide storage tank 143.

[0155] Valve 141 is located in piping 144. Valve 141 opens and closes the flow path in piping 144. For example, untemperature-controlled hydrogen peroxide is supplied to piping 144 from hydrogen peroxide storage tank 143. When valve 141 is opened, hydrogen peroxide is supplied from piping 144 to mixing valve 230. Hydrogen peroxide is an example of "other liquid among the multiple types of liquids" in this invention.

[0156] When the chemical nozzle 20A discharges SPM onto the substrate W, the deionized water supply unit 150 supplies deionized water (specifically, fresh deionized water) to the mixing valve 230. Specifically, the deionized water supply unit 150 includes a deionized water storage tank 154 and a supply unit 156. The deionized water storage tank 154 stores deionized water (specifically, fresh deionized water). The supply unit 156 supplies the deionized water stored in the deionized water storage tank 154 to the mixing valve 230.

[0157] The deionized water storage tank 154 corresponds to an example of the "predetermined liquid storage tank" of the present invention. The deionized water stored in the deionized water storage tank 154 (specifically, fresh deionized water) corresponds to an example of the "predetermined liquid" of the present invention.

[0158] The supply unit 156 includes a valve 151, a heating unit 152, a pump 153, and piping 155.

[0159] One end of pipe 155 is connected to a mixing valve 230. The other end of pipe 155 extends to a deionized water storage tank 154. A pump 153, a heating unit 152, and a valve 151 are arranged in this order from upstream to downstream in pipe 155.

[0160] Pump 153 sends deionized water stored in deionized water storage tank 154 to pipe 155. In other words, pump 153 supplies deionized water stored in deionized water storage tank 154 to pipe 155. Heating unit 152 heats the deionized water flowing through pipe 155 to set the temperature of the deionized water to the target temperature T10. Valve 151 opens and closes the flow path of pipe 155. The target temperature T10 is higher than room temperature. Heating unit 152 is, for example, a heater.

[0161] The piping 155 branches off between the heating unit 152 and the valve 151 and connects to the deionized water storage tank 154. When the valve 151 is closed, the deionized water heated by the heating unit 152 circulates between the deionized water storage tank 154 and the heating unit 152. Therefore, the temperature of the deionized water stored in the deionized water storage tank 154 is set to the target temperature T10.

[0162] When valve 151 is opened, deionized water set to the target temperature T10 is supplied from pipe 155 to mixing valve 230.

[0163] When the chemical nozzle 20A discharges SPM onto the substrate W, the mixing valve 230 mixes the ammonia water supplied from the ammonia storage tank 133, the hydrogen peroxide water supplied from the hydrogen peroxide water storage tank 143, and the deionized water supplied from the deionized water storage tank 154 to produce a mixture called SC1. One end of the piping 231 is connected to the chemical nozzle 20A, and the other end of the piping 231 is connected to the mixing valve 230. Therefore, the mixing valve 230 supplies SC1 to the chemical nozzle 20A through the piping 231. The chemical nozzle 20A then discharges SC1 onto the rotating substrate W. As a result, the substrate W is treated with SC1.

[0164] Furthermore, when the chemical nozzle 20A dispenses SC1 onto the substrate W, the valve 221 is closed. Also, the temperature of SC1 when dispensed from the chemical nozzle 20A is, for example, between 40°C and 70°C.

[0165] The chemical nozzle 20A discharges first deionized water onto the substrate W before discharging SC1 onto the substrate W. When the chemical nozzle 20A discharges first deionized water onto the substrate W, valves 131, 141, and 151 are closed.

[0166] When the chemical nozzle 20A discharges the first deionized water onto the substrate W, the same-type liquid supply unit 200B supplies the first deionized water. Specifically, the same-type liquid supply unit 200B supplies the first deionized water to the chemical nozzle 20A.

[0167] The same-type liquid supply unit 200B includes a supply unit 226 and a first storage tank 224. The supply unit 226 supplies the first deionized water stored in the first storage tank 224 to the chemical nozzle 20A. The first storage tank 224 stores the first deionized water.

[0168] The first deionized water stored in the first storage tank 224 corresponds to an example of the "first identical liquid" of the present invention.

[0169] The supply unit 226 includes a valve 221, a heating unit 222, a pump 223, and piping 225.

[0170] One end of pipe 225 is connected to pipe 231. The other end of pipe 225 extends to the first storage tank 224. The pump 223, heating unit 222, and valve 221 are arranged in this order from upstream to downstream in pipe 225.

[0171] Pump 223 delivers the first deionized water stored in the first storage tank 224 to the pipe 225. In other words, pump 223 supplies the first deionized water stored in the first storage tank 224 to the pipe 225. Heating unit 222 heats the first deionized water flowing through pipe 225 to set the temperature of the first deionized water to the target temperature T20. Valve 221 opens and closes the flow path of pipe 225. Heating unit 222 is, for example, a heater.

[0172] The piping 225 branches off between the heating unit 222 and the valve 221 and connects to the first storage tank 224. When the valve 221 is closed, the first deionized water heated by the heating unit 222 circulates between the first storage tank 224 and the heating unit 222. Therefore, the temperature of the first deionized water stored in the first storage tank 224 is set to the target temperature T20. The target temperature T20 is higher than room temperature.

[0173] With valves 131, 141, and 151 closed, when valve 221 is opened, the first deionized water, set to a target temperature T20, is supplied from pipe 225 to pipe 231, and then from pipe 231 to the chemical nozzle 20A. As a result, the chemical nozzle 20A discharges the first deionized water onto the substrate W before discharging SC1 onto the substrate W. Therefore, before discharging SC1 onto the substrate W, the surface of the substrate W and the chemical nozzle 20A are temperature-controlled to a temperature higher than room temperature. In other words, the surface of the substrate W and the chemical nozzle 20A are preheated before discharging SC1 onto the substrate W. As a result, the temperature drop of SC1 supplied to the substrate W during the SC1 treatment performed after discharging the first deionized water can be suppressed.

[0174] In Embodiment 2, the first guard 91 receives the first deionized water splashed from the rotating substrate W in the first opposing state. In Embodiment 2, the first cup 94 collects the first deionized water that flows down from the inner surface of the first guard 91. The first deionized water collected in the first cup 94 is recovered by a recovery unit 110 connected to the bottom of the first cup 94.

[0175] In Embodiment 2, the second guard 92 receives the SC1 scattered from the rotating substrate W in the second opposing state. The SC1 flowing down from the inner surface of the second guard 92 is collected in the second cup 95. The SC1 collected in the second cup 95 is discarded by a waste section 120 connected to the bottom of the second cup 95.

[0176] The recovery unit 110 recovers the first deionized water discharged onto the substrate W and supplies the first deionized water to the first storage tank 224. Specifically, the recovery unit 110 recovers the first deionized water scattered from the substrate W via the first guard 91 and the first cup 94.

[0177] Specifically, the recovery pump 111 sends the first deionized water recovered from the first cup 94 to the first storage tank 224. As a result, the first deionized water recovered by the recovery unit 110 is stored in the first storage tank 224 and reused. In other words, the recovered first deionized water is reused to preheat the chemical nozzle 20A and the surface of the substrate W before discharging SC1 onto the substrate W.

[0178] When the chemical nozzle 20A discharges the first deionized water, valves 131, 141, and 151 are closed. Therefore, the first deionized water stored in the first storage tank 224 is used only to preheat the surface of the chemical nozzle 20A and the substrate W before discharging SC1 onto the substrate W. In other words, the first deionized water stored in the first storage tank 224 is not used as any of the liquids used to generate SC1. To put it another way, the first deionized water stored in the first storage tank 224 is not used as deionized water to generate SC1. Thus, the recovered first deionized water is not supplied to the deionized water storage tank 154 and is not mixed with the deionized water in the deionized water storage tank 154.

[0179] Therefore, it is possible to prevent the purity of the deionized water used to generate SC1 (the deionized water stored in the deionized water storage tank 154) from decreasing due to the first deionized water. In other words, it is possible to prevent the purity of SC1 from decreasing due to the first deionized water. To put it another way, according to Embodiment 2, the first deionized water discharged onto the substrate W before the discharge of SC1 can be reused while suppressing the decrease in the purity of SC1.

[0180] In other words, according to Embodiment 2, the first identical liquid (liquid) discharged onto the substrate W before the discharge of the processing liquid can be reused while suppressing a decrease in the cleanliness of the processing liquid.

[0181] The control unit 501 controls the operation of each part of the substrate processing apparatus 1 based on various information stored in the memory unit 502. For example, the control unit 501 controls the SC1 supply unit 232.

[0182] As explained above with reference to Figure 7, according to Embodiment 2, the chemical nozzle 20A discharges the first deionized water supplied from the same-type liquid supply unit 200B onto the substrate W before SC1 is discharged onto the substrate W. In this case, the temperature of the first deionized water is higher than room temperature. Therefore, the temperature of the chemical nozzle 20A rises due to the first deionized water before the discharge of SC1. In addition, the surface temperature of the substrate W rises due to the first deionized water before the discharge of SC1. As a result, the decrease in the temperature of SC1 at the start of processing of the substrate W by SC1 can be suppressed. Thus, the processing performance of the substrate W by SC1 can be improved. Processing performance refers to the amount of substrate W processed per unit time. Improving the processing performance of the substrate W by SC1 reduces the amount of SC1 used. In other words, the amount of SC1 discarded can be reduced.

[0183] Furthermore, in Embodiment 2, it is preferable that the temperature of the first deionized water when it is discharged onto the substrate W is approximately the same as the temperature of SC1 when SC1 is discharged onto the substrate W. The reason is the same as in Embodiment 1. Also, in Embodiment 2, it is preferable that the temperature of the first deionized water when it is discharged onto the substrate W is higher than the temperature of the deionized water when it is mixed with other liquids (ammonia water and hydrogen peroxide water) from among the multiple types of liquids (ammonia water, hydrogen peroxide water, and deionized water). In other words, it is preferable that the temperature of the first deionized water when it is discharged onto the substrate W is higher than the temperature of the deionized water when SC1 is produced. The reason is the same as in Embodiment 1.

[0184] The substrate processing method according to Embodiment 2 is the same as the substrate processing method shown in Figure 4. However, in Embodiment 2, in step S3, the control unit 501 controls the same liquid supply unit 200B (valve 221) so that the chemical nozzle 20A discharges the first deionized water from the first storage tank 224 onto the substrate W. As a result, the first deionized water is supplied to the chemical nozzle 20A, and the chemical nozzle 20A discharges the first deionized water onto the substrate W.

[0185] Meanwhile, in step S4, the control unit 501 controls the recovery unit 110 (recovery pump 111) to recover the first deionized water that has been scattered from the substrate W and collected in the first cup 94. As a result, the recovery pump 111 is driven, and the first deionized water is recovered into the first storage tank 224 through the recovery piping 112.

[0186] Furthermore, in step S5, the control unit 501 controls the SC1 supply unit 232 (valves 131, 141, 151) so that the chemical nozzle 20A discharges SC1 onto the substrate W. As a result, the mixing valve 230 mixes the ammonia water from the ammonia storage tank 133, the hydrogen peroxide water from the hydrogen peroxide water storage tank 143, and the deionized water from the deionized water storage tank 154 to produce SC1. SC1 is then supplied to the chemical nozzle 20A, which discharges SC1 onto the substrate W.

[0187] In Embodiment 2, the treatment solution may be a hydrochloric acid-hydrogen peroxide mixture (SC2). Hereinafter, the hydrochloric acid-hydrogen peroxide mixture will be referred to as "SC2". SC2 is a mixture of hydrochloric acid (HCl), hydrogen peroxide (H2O2), and water. The water is deionized water (DIW). In addition, the water may be a liquid similar to that used for rinsing.

[0188] In the case of SC2, the multiple types of liquids are hydrochloric acid, hydrogen peroxide solution, and deionized water. For example, the designated liquid, which is one of the multiple types of liquids used to generate SC2, is deionized water. Furthermore, for example, the first identical liquid, which is the same type as the designated liquid, is first deionized water. SC2 can be considered a liquid derived from deionized water. When the processing liquid is SC2, hydrochloric acid is stored in the storage tank 133.

[0189] (Modified version of Embodiment 2) A modified version of Embodiment 2 will be described with reference to Figures 6 and 8. The modified version differs from Embodiment 2 in that the temperature of the first deionized water is adjusted by the second deionized water at room temperature. The differences between the modified version and Embodiment 2 will be described below.

[0190] Figure 8 is a schematic side view showing the interior of a substrate processing apparatus 1 according to a modified example of Embodiment 2. As shown in Figure 8, the substrate processing apparatus 1 according to the modified example includes a similar liquid supply unit 200C instead of the same liquid supply unit 200B in Figure 7. The same liquid supply unit 200C includes a first storage tank 224, a second storage tank 244, and a liquid supply unit 249. The liquid supply unit 249 includes a heating unit 222. Specifically, the supply unit 226A of the liquid supply unit 249 includes the heating unit 222.

[0191] The second storage tank 244 stores a second identical liquid. The second identical liquid is a liquid at room temperature. The second identical liquid is the same type of liquid as the predetermined liquid. The predetermined liquid is one of several types of liquids used to generate the processing liquid.

[0192] In the following modified example, the processing liquid is SC1. The specified liquid is one of several types of liquids used to generate SC1. In the modified example, the specified liquid is deionized water stored in the deionized water storage tank 154. Therefore, the second identical liquid is the same type of liquid as deionized water. In other words, the second identical liquid is deionized water. Hereafter, deionized water as the second identical liquid will be referred to as "second deionized water".

[0193] The heating unit 222 heats the first deionized water stored in the first storage tank 224. The liquid supply unit 249 mixes the first deionized water heated by the heating unit 222 with the second deionized water at room temperature and supplies the resulting liquid as new first deionized water to the chemical nozzle 20A. In a modified version, the temperature of the new first deionized water supplied to the chemical nozzle 20A can be easily adjusted by mixing the heated first deionized water with the second deionized water at room temperature.

[0194] In detail, the liquid supply unit 249 of the seed liquid supply unit 200C includes supply unit 226A and supply unit 246.

[0195] The supply unit 226A adjusts the flow rate of the first deionized water supplied to the piping 225. In other words, the supply unit 226A adjusts the flow rate of the first deionized water that is mixed with the second deionized water. The first deionized water supplied by the supply unit 226A is heated by the heating unit 222.

[0196] Specifically, the supply unit 226A includes, in addition to the configuration of the supply unit 226 in Figure 7, a flow rate adjustment valve 227 and a flow meter 228. The flow meter 228 detects the flow rate of the first deionized water flowing through the pipe 225. The flow rate adjustment valve 227 adjusts the flow rate of the first deionized water flowing through the pipe 225 by adjusting the opening of the pipe 225. In other words, the flow rate adjustment valve 227 adjusts the flow rate of the first deionized water that mixes with the second deionized water.

[0197] The supply unit 246 adjusts the flow rate of the second deionized water supplied to the piping 245. In other words, the supply unit 246 adjusts the flow rate of the second deionized water mixed with the first deionized water. The temperature of the second deionized water supplied by the supply unit 246 is room temperature. The second storage tank 244 stores the second deionized water.

[0198] The second deionized water stored in the second storage tank 244 corresponds to an example of the "second identical liquid" of the present invention.

[0199] The supply unit 246 includes a valve 241, a flow control valve 247, a flow meter 248, a pump 243, and piping 245.

[0200] One end of pipe 245 is connected to pipe 225. The other end of pipe 245 extends to the second storage tank 244. Pump 243 sends the second deionized water stored in the second storage tank 244 to pipe 245. In other words, pump 243 supplies the second deionized water stored in the second storage tank 244 to pipe 245. Flow meter 248 detects the flow rate of the second deionized water flowing through pipe 245. Flow control valve 247 adjusts the opening of pipe 245 to control the flow rate of the second deionized water flowing through pipe 245. In other words, flow control valve 247 adjusts the flow rate of the second deionized water that mixes with the first deionized water. Valve 241 opens and closes the flow path of pipe 245.

[0201] With valves 131, 141, and 151 closed, when valves 221 and 241 are opened, the first deionized water from the first storage tank 224, set to a target temperature T20, and the second deionized water from the second storage tank 244, at room temperature, are mixed in piping 225. As a result, the temperature of the mixture is adjusted according to the mixing ratio of the first and second deionized waters. The mixture is supplied to piping 231 as new first deionized water, and further supplied to the chemical nozzle 20A.

[0202] In this case, the control unit 501 controls the flow rate adjustment valve 227 to adjust the flow rate of the first deionized water. The control unit 501 also controls the flow rate adjustment valve 247 to adjust the flow rate of the second deionized water.

[0203] Specifically, the control unit 501 controls the flow rate adjustment valve 227 and the flow rate adjustment valve 247 to adjust the ratio of the flow rate of the second deionized water to the flow rate of the first deionized water. In other words, the control unit 501 controls the flow rate adjustment valve 227 and the flow rate adjustment valve 247 to adjust the mixing ratio of the first deionized water and the second deionized water.

[0204] The substrate processing method according to the modified embodiment 2 is the same as the substrate processing method according to embodiment 2 described with reference to Figure 6. However, in the modified embodiment, in step S23, the control unit 501 controls the liquid supply unit 249 (valves 221, 241 and flow rate adjustment valves 227, 247) to mix the heated first deionized water from the first storage tank 224 with the room temperature second deionized water from the second storage tank 244, and to discharge the resulting liquid as new first deionized water to the substrate W. As a result, the flow rate of the first deionized water is adjusted by the flow rate adjustment valve 227 and valve 221 is opened. In addition, the flow rate of the second deionized water is adjusted by the flow rate adjustment valve 247 and valve 241 is opened. Therefore, the heated first deionized water and the room temperature second deionized water are mixed in the piping 225 to produce a temperature-adjusted mixture. The mixture is then supplied to the chemical nozzle 20A as new first deionized water. As a result, the chemical nozzle 20A discharges the first deionized water onto the substrate W. The first deionized water preheats the surface of the chemical nozzle 20A and the substrate W.

[0205] In the modified example, step S24 in Figure 6 is the same as step S4 in Embodiment 2 described with reference to Figure 4. Also, in the modified example, step S25 in Figure 6 is the same as step S5 in Embodiment 2 described with reference to Figure 4.

[0206] Here, in the modified example, the processing liquid may be SC2. The predetermined liquid is one of several types of liquids for generating SC2. In the modified example, the predetermined liquid is deionized water stored in the deionized water storage tank 154. Therefore, the second identical liquid is the same type of liquid as deionized water. In other words, the second identical liquid is second deionized water.

[0207] Embodiments (including modifications) of the present invention have been described above with reference to the drawings (Figures 1 to 8). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from the spirit of the invention. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some components from all the components shown in one embodiment may be added to the components of another embodiment, or some components from all the components shown in one embodiment may be deleted from the embodiment.

[0208] The drawings schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Furthermore, the configuration of each component shown in the above embodiments is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible without substantially departing from the effects of the present invention.

[0209] (1) In Embodiment 1 and Embodiment 2 (including modified examples), the first identical liquid (first sulfuric acid, first deionized water) and the second identical liquid (second sulfuric acid, second deionized water) are, for example, liquids that do not contribute to the treatment of the substrate W.

[0210] (2) In Figures 1 and 5, the nozzle for discharging the first sulfuric acid onto the substrate W may be provided separately from the chemical nozzle 20 for discharging SPM onto the substrate W. Also, in Figures 7 and 8, the nozzle for discharging the first deionized water onto the substrate W may be provided separately from the chemical nozzle 20A for discharging SC1 onto the substrate W.

[0211] (3) In Figures 1, 5, 7, and 8, for example, SPM may be discarded from the first guard 91 and the first cup 94. In this case, a drain pipe branching from the recovery pipe 112 is provided. When SPM is discarded, the SPM is discharged from the drain pipe and the recovery pipe 112 to the first storage tank 204 is closed. On the other hand, when recovering the first sulfuric acid, the drain pipe is closed with a valve. These points are the same when discarding SC1 and SC2.

[0212] (4) The concentration of the first sulfuric acid in the first storage tank 204 may be different from the concentration of sulfuric acid in the sulfuric acid storage tank 54. The concentration of the second sulfuric acid in the second storage tank 214 may be different from the concentration of sulfuric acid in the sulfuric acid storage tank 54. The concentration of the first sulfuric acid in the first storage tank 204 may be different from the concentration of the second sulfuric acid in the second storage tank 214. The temperature of the first sulfuric acid in the first storage tank 204 may be different from the temperature of the sulfuric acid in the sulfuric acid storage tank 54. The temperature of the second sulfuric acid in the second storage tank 214 may be different from the temperature of the sulfuric acid in the sulfuric acid storage tank 54.

[0213] (5) The temperature of the first deionized water in the first storage tank 224 may be different from the temperature of the deionized water in the deionized water storage tank 154. The temperature of the second deionized water in the second storage tank 244 may be different from the temperature of the deionized water in the deionized water storage tank 154.

[0214] (6) In Embodiment 1 (including modified versions), SPM may be recovered and reused. In particular, in Embodiment 1 (including modified versions), the amount of SPM used can be reduced, and therefore the power consumption (e.g., power for temperature control) when reusing SPM can be suppressed.

[0215] (7) In Figures 1, 5, 7, and 8, the spin chuck 10 was a clamping type chuck, but the spin chuck 10 is not limited to a clamping type chuck. For example, the spin chuck 10 may be a vacuum type chuck. [Industrial applicability]

[0216] The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability. [Explanation of Symbols]

[0217] 1. Substrate processing device 10. Spin chuck (substrate holding part) 20, 20A Chemical solution nozzle (discharge part) 54. Sulfuric acid storage tank (specified liquid storage tank) 110 Recovery Unit 200, 200A, 200B, 200C homogeneous liquid supply section 202, 222 heating section 204, 224 1st storage tank 214, 244 2nd storage tank 219, 249 Liquid supply section W board

Claims

1. A substrate processing apparatus that processes a substrate by discharging a processing liquid, which is a mixture of multiple types of liquids, onto the substrate, A substrate holding unit that holds and rotates the substrate, A predetermined liquid storage tank for storing a predetermined liquid which is one of the plurality of liquids used to generate the processing liquid, The system includes a first storage tank for storing a first identical liquid which is the same type of liquid as the predetermined liquid, and an identical liquid supply unit for supplying the first identical liquid, A discharge unit that discharges the first identical liquid supplied from the identical liquid supply unit onto the substrate before the processing liquid derived from the predetermined liquid is discharged onto the substrate, A recovery unit that recovers the first identical liquid discharged onto the substrate and supplies the first identical liquid to the first storage tank. Equipped with, The temperature of the first identical liquid supplied from the identical liquid supply unit is higher than room temperature. The first identical liquid is not used as any of the multiple types of liquids in the substrate processing apparatus.

2. The substrate processing apparatus according to claim 1, wherein the temperature of the first identical liquid when it is discharged onto the substrate is substantially the same as the temperature of the processing liquid when it is discharged onto the substrate.

3. The substrate processing apparatus according to claim 1, wherein the temperature of the first identical liquid when it is discharged onto the substrate is higher than the temperature of the predetermined liquid when the processing liquid is generated.

4. The aforementioned same type of liquid supply unit is A second storage tank for storing a second identical liquid which is a liquid at room temperature and is the same type of liquid as the predetermined liquid, A liquid supply unit that mixes the first identical liquid and the second identical liquid, and supplies the resulting liquid as a new first identical liquid to the discharge unit. It further includes, The substrate processing apparatus according to any one of claims 1 to 3, wherein the liquid supply unit includes a heating unit for heating the first identical liquid stored in the first storage tank.

5. The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing liquid is a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide, and the first identical liquid is sulfuric acid.

6. The aforementioned processing liquid is an ammonia-hydrogen peroxide mixture obtained by mixing ammonia water, hydrogen peroxide water, and water, and the first identical liquid is water, or The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing liquid is a hydrochloric acid-hydrogen peroxide mixture obtained by mixing hydrochloric acid, hydrogen peroxide solution, and water, and the first identical liquid is water.

7. A substrate processing method comprising discharging a processing liquid, which is a mixture of several types of liquids, onto the substrate, A step of discharging the processing liquid derived from a predetermined liquid onto the substrate, A step of discharging a first identical liquid, which is the same type of liquid as the predetermined liquid, onto the substrate before the processing liquid is discharged onto the substrate, The process involves recovering the first identical liquid discharged onto the substrate and supplying the first identical liquid to the first storage tank. Includes, The predetermined liquid is one of the multiple types of liquids used to generate the processing liquid. The temperature of the first identical liquid when it is dispensed onto the substrate is higher than room temperature. In the step of discharging the first identical liquid onto the substrate, the first identical liquid stored in the first storage tank is reused. A substrate processing method wherein the first identical liquid is not used as any of the multiple types of liquids.

8. The substrate processing method according to claim 7, wherein the temperature of the first identical liquid when it is discharged onto the substrate is approximately the same as the temperature of the processing liquid when it is discharged onto the substrate.

9. The substrate processing method according to claim 7, wherein the temperature of the first identical liquid when it is discharged onto the substrate is higher than the temperature of the predetermined liquid when the processing liquid is generated.

10. In the step of discharging the first identical liquid onto the substrate, the heated first identical liquid from the first storage tank and the second identical liquid at room temperature from the second storage tank are mixed, and the resulting liquid is discharged onto the substrate as a new first identical liquid. The substrate processing method according to any one of claims 7 to 9, wherein the second identical liquid is the same type of liquid as the predetermined liquid.

11. The substrate processing method according to any one of claims 7 to 9, wherein the processing liquid is a sulfuric acid-hydrogen peroxide mixture obtained by mixing sulfuric acid and hydrogen peroxide, and the first identical liquid is sulfuric acid.

12. The aforementioned processing liquid is an ammonia-hydrogen peroxide mixture obtained by mixing ammonia water, hydrogen peroxide water, and water, and the first identical liquid is water, or The substrate processing method according to any one of claims 7 to 9, wherein the processing liquid is a hydrochloric acid-hydrogen peroxide mixture obtained by mixing hydrochloric acid, hydrogen peroxide solution and water, and the first identical liquid is water.

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