Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method that make it difficult for the outer periphery of a substrate to become uncovered with a liquid film when processing liquid is switched.SOLUTION: A substrate processing apparatus 100 includes a nozzle 3, a substrate holding unit 2, a liquid receiving unit 11, a liquid drainage mechanism 6, and a nozzle moving unit 5. The nozzle 3 selectively discharges a plurality of types of processing liquid including an acidic chemical liquid, an alkaline chemical liquid, and a rinse liquid. The substrate holding unit 2 holds a substrate W. The liquid receiving unit 11 is disposed outside the substrate holding unit 2 and receives the processing liquid discharged from the nozzle 3. The liquid drainage mechanism 6 guides the acidic chemical liquid discharged from the liquid receiving unit 11 to a first drain pipe DP1, and guides the alkaline chemical liquid discharged from the liquid receiving unit 11 to a second drain pipe DP2. The nozzle moving unit 5 moves the nozzle 3 between a processing position PS1 facing the substrate W held by the substrate holding unit 2 and a standby position PS2 facing the liquid receiving unit 11.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] A single-wafer type substrate processing apparatus that discharges a chemical solution and a rinse solution toward a rotating substrate to process the substrate is known. This type of substrate processing apparatus processes substrates one by one with a chemical solution and a rinse solution. For example, Patent Document 1 discloses a single-wafer type substrate processing apparatus.

[0003] The substrate processing apparatus of Patent Document 1 includes a first scan nozzle that discharges a first chemical solution, a second scan nozzle that discharges a second chemical solution, and a fixed nozzle that discharges a rinse solution. After moving from the first standby position to the processing position, the first scan nozzle discharges the first chemical solution from the processing position toward the rotating substrate. After moving from a second standby position different from the first standby position to the processing position, the second scan nozzle discharges the second chemical solution from the processing position toward the rotating substrate. The substrate processing apparatus of Patent Document 1 supplies the first chemical solution, the second chemical solution, and the rinse solution to the substrate in the order of the first chemical solution, the rinse solution, the second chemical solution, and the rinse solution.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the substrate processing apparatus of Patent Document 1, when switching from the first chemical solution to the rinsing solution, the discharge of the first chemical solution is stopped, the first scan nozzle is moved to the first standby position, and then the rinsing solution is discharged from the fixed nozzle. Similarly, when switching from the rinsing solution to the second chemical solution, the discharge of the rinsing solution is stopped, the second scan nozzle is moved from the second standby position to the processing position, and then the second chemical solution is discharged. Therefore, when switching from the first chemical solution to the rinsing solution, there is a possibility that the outer periphery of the substrate will not be covered with a liquid film. Likewise, when switching from the rinsing solution to the second chemical solution, there is a possibility that the outer periphery of the substrate will not be covered with a liquid film. As a result, for example, in subsequent processes, pattern collapse is more likely to occur on the outer periphery of the substrate. Therefore, considering yield, there is room for further improvement.

[0006] The present invention has been made in view of the above problems, and its purpose is to provide a substrate processing apparatus and a substrate processing method that makes it less likely for the outer periphery of the substrate to be left uncovered by a liquid film when the processing liquid is switched. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus comprises a nozzle, a substrate holding section, a liquid receiving section, a drainage mechanism, and a nozzle moving section. The nozzle selectively discharges a plurality of processing liquids, including an acidic chemical solution, an alkaline chemical solution, and a rinsing liquid. The substrate holding section holds the substrate. The liquid receiving section is located outside the substrate holding section and receives the processing liquid discharged from the nozzle. The drainage mechanism guides the acidic chemical solution discharged from the liquid receiving section to a first drain pipe and the alkaline chemical solution discharged from the liquid receiving section to a second drain pipe. The nozzle moving section moves the nozzle between a processing position facing the substrate held by the substrate holding section and a standby position facing the liquid receiving section.

[0008] In one embodiment, the substrate processing apparatus further comprises a control unit. The control unit controls the supply of the plurality of processing liquids to the nozzle. When switching the type of processing liquid to be discharged from the nozzle to the substrate, the control unit delays the timing of stopping the supply of the processing liquid that is being discharged from the nozzle in advance, and supplies two types of processing liquids to the nozzle simultaneously for a certain period of time.

[0009] In one embodiment, the substrate processing apparatus further comprises a storage unit, an input unit, and a control unit. The storage unit stores a discharge order. The discharge order indicates the order in which the plurality of processing liquids are discharged from the nozzle. The input unit is operated by a user to input the discharge order. The control unit prohibits setting the discharge order to discharge the alkaline chemical solution after the acidic chemical solution.

[0010] In one embodiment, the substrate processing apparatus further comprises a liquid tank, a supply pipe, a suck-back mechanism, and a control unit. The alkaline chemical solution flows into the liquid tank from the second drain pipe. The supply pipe selectively supplies the plurality of processing liquids to the nozzle. The suck-back mechanism is connected to the supply pipe. The suck-back mechanism sucks back the processing liquid that is stagnant between the connection point with the supply pipe and the tip of the nozzle. The suck-back mechanism circulates the sucked-back processing liquid to the liquid tank. The control unit prohibits the operation of the suck-back mechanism if the processing liquid discharged last from the nozzle in the discharge sequence, which is the sequence in which the plurality of processing liquids are discharged from the nozzle toward the substrate, is a processing liquid other than the rinsing liquid.

[0011] In one embodiment, the substrate processing apparatus further comprises a cup portion. The cup portion receives the processing liquid discharged from the substrate. The drainage mechanism guides the acidic chemical solution discharged from the cup portion to the first drain pipe and the alkaline chemical solution discharged from the cup portion to the second drain pipe.

[0012] In one embodiment, the liquid receiving section includes a first liquid receiving section and a second liquid receiving section. The first liquid receiving section receives the acidic chemical solution. The second liquid receiving section receives the alkaline chemical solution. The drainage mechanism guides the acidic chemical solution discharged from the first liquid receiving section to the first drain pipe and the alkaline chemical solution discharged from the second liquid receiving section to the second drain pipe.

[0013] In one embodiment, the substrate processing apparatus further comprises a storage unit and a control unit. The storage unit stores a discharge order. The discharge order indicates the order in which the plurality of processing liquids are discharged from the nozzle onto the substrate. The control unit generates an order in which the plurality of processing liquids are discharged from the nozzle onto the liquid receiving unit based on the discharge order.

[0014] In one embodiment, the plurality of processing liquids further include an organic solvent. The drainage mechanism guides the acidic chemical solution discharged from the liquid receiving section to the first drain pipe, the alkaline chemical solution discharged from the liquid receiving section to the second drain pipe, and the organic solvent discharged from the liquid receiving section to the third drain pipe.

[0015] In one embodiment, the substrate processing apparatus further comprises a cup portion. The cup portion receives the processing liquid discharged from the substrate. The drainage mechanism guides the acidic chemical solution discharged from the cup portion to the first drain pipe, the alkaline chemical solution discharged from the cup portion to the second drain pipe, and the organic solvent discharged from the cup portion to the third drain pipe.

[0016] In one embodiment, the liquid receiving section includes a first liquid receiving section, a second liquid receiving section, and a third liquid receiving section. The first liquid receiving section receives the acidic chemical solution. The second liquid receiving section receives the alkaline chemical solution. The third liquid receiving section receives the organic solvent. The drainage mechanism guides the acidic chemical solution discharged from the first liquid receiving section to the first drain pipe, the alkaline chemical solution discharged from the second liquid receiving section to the second drain pipe, and the organic solvent discharged from the third liquid receiving section to the third drain pipe.

[0017] In another aspect of the present invention, a substrate processing method includes the steps of selectively discharging a plurality of processing liquids, including an acidic chemical solution, an alkaline chemical solution, and a rinsing liquid, from a nozzle positioned opposite a liquid receiving portion located outside a substrate holding portion that holds the substrate; guiding the acidic chemical solution discharged from the liquid receiving portion to a first drain pipe; guiding the alkaline chemical solution discharged from the liquid receiving portion to a second drain pipe; and moving the nozzle to a position opposite the substrate and selectively discharging the plurality of processing liquids from the nozzle toward the substrate. [Effects of the Invention]

[0018] According to the substrate processing apparatus and substrate processing method of the present invention, when the processing liquid is switched, it becomes less likely that the outer periphery of the substrate will not be covered with a liquid film. [Brief explanation of the drawing]

[0019] [Figure 1] This is a schematic plan view of a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 2] This diagram schematically shows the internal configuration of the substrate processing unit, the configuration of the drainage mechanism, and the configuration of the liquid supply mechanism included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 3] This is a schematic plan view showing the inside of a substrate processing unit included in a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 4]It is a diagram schematically showing the configuration of a drainage mechanism included in a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 5] It is a flowchart showing a method of pre-dispensing a processing liquid from a nozzle. [Figure 6] It is a flowchart showing a method of processing a substrate. [Figure 7] (a) is a block diagram showing a part of the configuration of a substrate processing apparatus according to Embodiment 1 of the present invention. (b) is a diagram showing an error message displayed on a display unit included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 8] (a) is a diagram schematically showing a first example of a pre-recipe. (b) is a diagram schematically showing a second example of a pre-recipe. [Figure 9] (a) is a diagram schematically showing a first example of a process recipe. (b) is a diagram schematically showing a second example of a process recipe. [Figure 10] It is a diagram showing the timing of supplying a processing liquid to a nozzle. [Figure 11] It is a diagram schematically showing the internal configuration of a substrate processing unit, the configuration of a drainage mechanism, and the configuration of a liquid supply mechanism included in a substrate processing apparatus according to Embodiment 2 of the present invention. [Figure 12] It is a diagram schematically showing the configuration of a drainage mechanism included in a substrate processing apparatus according to Embodiment 2 of the present invention. [Figure 13] It is a diagram schematically showing the internal configuration of a substrate processing unit, the configuration of a drainage mechanism, and the configuration of a liquid supply mechanism included in a substrate processing apparatus according to Embodiment 3 of the present invention. [Figure 14] It is a diagram schematically showing the configuration of a drainage mechanism included in a substrate processing apparatus according to Embodiment 3 of the present invention. [Figure 15] It is a flowchart showing a method of pre-dispensing a processing liquid from a nozzle. [Figure 16] It is a flowchart showing a method of processing a substrate. [Figure 17]This figure schematically shows the internal configuration of the substrate processing unit, the configuration of the drainage mechanism, and the configuration of the liquid supply mechanism included in the substrate processing apparatus according to Embodiment 4 of the present invention. [Figure 18] This figure schematically shows the configuration of a drainage mechanism included in a substrate processing apparatus according to Embodiment 4 of the present invention. [Modes for carrying out the invention]

[0020] Embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described below with reference to the drawings (Figures 1 to 18). However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from its essence. In addition, explanations may be omitted where necessary to avoid repetition. Furthermore, in the figures, the same or corresponding parts are denoted by the same reference numerals and their descriptions are not repeated.

[0021] In the substrate processing apparatus and substrate processing method according to the present invention, the "substrate" to be processed can be various types of substrates, including semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. The embodiments of the present invention will be described below primarily using a disc-shaped semiconductor wafer as an example, but the substrate processing apparatus and substrate processing method according to the present invention can be similarly applied to various types of substrates other than the semiconductor wafers mentioned above. Furthermore, the substrate shape is not limited to a disc shape; the substrate processing apparatus and substrate processing method according to the present invention can be applied to substrates of various shapes.

[0022] [Embodiment 1] First, Embodiment 1 of the present invention will be described with reference to Figures 1 to 10. Figure 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 processes substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus that processes substrates W one by one using multiple types of processing liquids. Hereinafter, the processing of substrates W with processing liquids may be referred to as "substrate processing".

[0023] As shown in Figure 1, the substrate processing apparatus 100 comprises a plurality of substrate processing units 200, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0024] Each load port LP accommodates multiple substrates W stacked on top of each other. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing unit 200. Alternatively, a temporary placement platform (path) for the substrates W may be provided between the indexer robot IR and the center robot CR, allowing for indirect transfer of the substrates W between the indexer robot IR and the center robot CR via the placement platform.

[0025] Multiple substrate processing units 200 form multiple towers TW (four towers TW in Figure 1). The multiple towers TW are arranged to surround the central robot CR in a plan view. Each tower TW contains multiple substrate processing units 200 (three substrate processing units 200 in Figure 1) stacked vertically.

[0026] Each of the substrate processing units 200 sequentially supplies multiple types of processing solutions to the upper surface of the substrate W. As a result, the substrate W is processed. In this embodiment, the substrate processing unit 200 performs etching. Specifically, the substrate processing unit 200 etches the hard mask formed on the substrate W.

[0027] The multiple types of processing solutions include an acidic solution, an alkaline solution, and a rinsing solution. The acidic solution is, for example, DHF (dilute hydrofluoric acid). The alkaline solution is, for example, SC1 (ammonia-hydrogen peroxide mixture). SC1 is a mixture of ammonia water (NH4OH), hydrogen peroxide water (H2O2), and water such as pure water. Pure water is, for example, deionized water (DIW). The rinsing solution is, for example, water such as pure water (e.g., deionized water). Each of the substrate processing units 200 processes the substrate W by supplying the acidic solution (e.g., DHF), the alkaline solution (e.g., SC1), and the rinsing solution (e.g., DIW) to the substrate W in the order of acidic solution, rinsing solution, alkaline solution, and rinsing solution.

[0028] The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 200. The control device 101 includes a control unit 102 and a storage unit 103.

[0029] The control unit 102 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as its processor. Alternatively, the control unit 102 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0030] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes process recipe SRP and pre-recipe YRP. The process recipe SRP is data that defines the procedure for substrate processing. Specifically, the process recipe SRP defines the execution order of a series of processes included in substrate processing, the content of each process, and the conditions (parameter settings) for each process. The pre-recipe YRP defines the order of processing liquids to be discharged from the nozzle 3 during pre-dispensing.

[0031] The storage unit 103 has a main memory. The main memory is, for example, a semiconductor memory. The storage unit 103 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

[0032] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 2 is a schematic diagram showing the internal configuration of the substrate processing unit 200, the drainage mechanism 6, and the liquid supply mechanism 8 included in the substrate processing apparatus 100 of this embodiment. Figure 3 is a schematic plan view showing the inside of the substrate processing unit 200 included in the substrate processing apparatus 100 of this embodiment.

[0033] As shown in Figures 2 and 3, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a nozzle 3, a substrate rotating unit 4, a nozzle moving unit 5, a cup unit 7, a suck-back mechanism 9, a liquid receiving unit 11, and a lifting unit 73. The substrate processing device 100 further includes a liquid draining mechanism 6 and a liquid supply mechanism 8.

[0034] The substrate W is brought into the processing chamber 200a and processed within the processing chamber 200a. The processing chamber 200a has a roughly box shape. The processing chamber 200a houses the substrate holding section 2, the nozzle 3, the substrate rotating section 4, the nozzle moving section 5, part of the drainage mechanism 6, the cup section 7, part of the liquid supply mechanism 8, part of the suck-back mechanism 9, the liquid receiving section 11, and the lifting section 73. The processing chamber 200a is, for example, a chamber.

[0035] The substrate holding unit 2 holds the substrate W. The operation of the substrate holding unit 2 is controlled by the control device 101 (control unit 102). More specifically, the substrate holding unit 2 holds the substrate W in a horizontal position. The substrate holding unit 2 is, for example, a spin chuck. In this embodiment, the substrate holding unit 2 has a plurality of chuck members 21 and a spin base 22.

[0036] As shown in Figure 3, the spin base 22 is substantially disc-shaped and supports a plurality of chuck members 21 in a horizontal position. The plurality of chuck members 21 are arranged on the periphery of the spin base 22. The plurality of chuck members 21 grip the periphery of the substrate W. The plurality of chuck members 21 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 21 is controlled by the control device 101 (control unit 102). The plurality of chuck members 21 are arranged so that the center of the substrate W coincides with the center of the spin base 22.

[0037] As shown in Figure 2, the substrate rotating unit 4 rotates the substrate holding unit 2, thereby rotating the substrate holding unit 2, which in turn rotates the substrate holding unit 2. Specifically, the substrate rotating unit 4 rotates the substrate W and the substrate holding unit 2 together around a first rotation axis AX1 that extends in the vertical direction. The operation of the substrate rotating unit 4 is controlled by the control device 101 (control unit 102).

[0038] More specifically, the first rotation axis AX1 passes through the center of the spin base 22. Therefore, the spin base 22 rotates with its own center as the center of rotation. Also, as already explained, the substrate holder 2 holds the substrate W such that its center coincides with the center of the spin base 22. Therefore, the substrate W rotates with its own center as the center of rotation.

[0039] The substrate rotating section 4 includes, for example, a shaft 41 and a motor body 42. The shaft 41 is coupled to the spin base 22. The motor body 42 rotates the shaft 41. As a result, the spin base 22 rotates. The operation of the motor body 42 is controlled by a control device 101 (control unit 102). The motor body 42 is, for example, an electric motor.

[0040] As shown in Figure 3, the nozzle moving unit 5 is controlled by the control device 101 (control unit 102) to move the nozzle 3 between the processing position PS1 and the standby position PS2. The processing position PS1 is the position opposite the substrate W held by the substrate holding unit 2. The standby position PS2 is the position outside the substrate holding unit 2 in a plan view. In this embodiment, the standby position PS2 is the position outside the cup portion 7 in a plan view. More specifically, the standby position PS2 is the position opposite the liquid receiving portion 11.

[0041] More specifically, the nozzle moving unit 5 moves the nozzle 3 in the vertical and horizontal directions. Specifically, as shown in Figure 2, the nozzle moving unit 5 has an arm 51, a base 52, and a nozzle moving mechanism 53.

[0042] The arm 51 extends horizontally. The arm 51 supports the nozzle 3. For example, the nozzle 3 is connected to the tip of the arm 51. The arm 51 is connected to the base 52. The base 52 extends vertically.

[0043] The nozzle movement mechanism 53 moves the arm 51 in the vertical and horizontal directions. As a result, the nozzle 3 moves in the vertical and horizontal directions. The nozzle movement mechanism 53 is controlled by the control device 101 (control unit 102).

[0044] Specifically, the nozzle moving mechanism 53 swings the base 52 about a second rotation axis AX2 extending vertically, causing the arm 51 to swing along the horizontal plane. As a result, the nozzle 3 moves along the horizontal plane. The nozzle moving mechanism 53 also raises and lowers the base 52 vertically, causing the arm 51 to raise and lower. As a result, the nozzle 3 moves along the vertical plane. The nozzle moving mechanism 53 includes, for example, a ball screw mechanism and a reversible electric motor. The electric motor drives the ball screw mechanism.

[0045] During substrate processing, nozzle 3 selectively discharges multiple types of processing liquids from processing position PS1 (see Figure 3) toward the upper surface of the substrate W held by the substrate holding unit 2. The processing liquids are discharged from the tip of nozzle 3. More specifically, nozzle 3 selectively discharges acidic chemicals, alkaline chemicals, and rinsing liquids from processing position PS1 (see Figure 3) toward the upper surface of the substrate W being rotated by the substrate rotating unit 4.

[0046] In this embodiment, the nozzle 3 discharges an acidic solution, an alkaline solution, and a rinse solution in the order of acidic solution, rinse solution, alkaline solution, and rinse solution during substrate processing. The first discharge sequence, which is the order in which multiple types of processing solutions are discharged from the nozzle 3 during substrate processing, is stored in the memory unit 103 (see Figure 1). Specifically, the first discharge sequence is defined by the process recipe SRP.

[0047] Furthermore, nozzle 3 performs a pre-dispense process. The pre-dispense process is performed while nozzle 3 is positioned at the standby position PS2 (see Figure 3). More specifically, the pre-dispense process involves discharging processing liquid from nozzle 3 towards the liquid receiving section 11 before substrate processing is performed. During the pre-dispense process, nozzle 3 selectively dispenses multiple types of processing liquid.

[0048] In this embodiment, when the pre-dispense process is performed, the nozzle 3 discharges the acidic solution, alkaline solution, and rinse solution in the order of acidic solution, rinse solution, alkaline solution, and rinse solution. The second discharge sequence, which is the order in which multiple types of processing solutions are discharged from the nozzle 3 to the liquid receiving section 11 during the pre-dispense process, is stored in the memory unit 103 (see Figure 1). Specifically, the second discharge sequence is defined by the pre-recipe YRP.

[0049] The cup portion 7 receives the processing liquid discharged from the substrate W, preventing the processing liquid from splashing into the processing chamber 200a. Specifically, the cup portion 7 includes a guard portion 71 and a cup liquid receiving portion 72.

[0050] The guard portion 71 is positioned outside the substrate holding portion 2 and the substrate rotating portion 4. The guard portion 71 has a roughly cylindrical shape. In other words, the guard portion 71 surrounds the substrate holding portion 2 and the substrate rotating portion 4. The guard portion 71 catches the processing liquid splashed from the rotating substrate W.

[0051] The cup liquid receiving section 72 is connected to the lower end of the guard section 71. The cup liquid receiving section 72 is annular in shape and forms an annular groove on the inside of the guard section 71. The processing liquid received by the guard section 71 flows down to the cup liquid receiving section 72 by its own weight. Alternatively, the processing liquid received by the guard section 71 bounces back from the guard section 71 and falls into the cup liquid receiving section 72 by its own weight. As a result, the processing liquid is collected in the groove of the cup liquid receiving section 72.

[0052] The lifting unit 73 raises and lowers the cup portion 7. The lifting unit 73 is controlled by the control device 101 (control unit 102). The lifting unit 73 includes, for example, a ball screw mechanism and a forward and reverse rotatable electric motor. The electric motor drives the ball screw mechanism.

[0053] Specifically, the lifting unit 73 raises and lowers the cup portion 7 between an upper position and a lower position. The upper position is a position above the lower position. For example, when the substrate W is brought into the processing chamber 200a by the center robot CR (Figure 1), or when the substrate W is removed from the processing chamber 200a by the center robot CR (Figure 1), the cup portion 7 is retracted to the lower position. The cup portion 7 is positioned in the upper position when receiving the processing liquid. In other words, the cup portion 7 is positioned in the upper position during substrate processing.

[0054] The liquid receiving section 11 is located outside the substrate holding section 2. The liquid receiving section 11 receives the processing liquid discharged from the nozzle 3 during the pre-dispensing process. In this embodiment, the liquid receiving section 11 is located outside the cup section 7. Specifically, the liquid receiving section 11 is located below the standby position PS2 (see Figure 3). The liquid receiving section 11 is, for example, a standby pod.

[0055] The drainage mechanism 6 discharges the processed liquid collected in the cup section 7 from the cup section 7. The drainage mechanism 6 also discharges the processed liquid collected in the liquid receiving section 11 from the liquid receiving section 11. Specifically, the drainage mechanism 6 includes a pod drainage pipe 62 and a cup drainage pipe 63. The processing chamber 200a houses a portion of the pod drainage pipe 62 and a portion of the cup drainage pipe 63.

[0056] The pod drainage pipe 62 is a tubular component. One end of the pod drainage pipe 62 is connected to the bottom of the liquid receiving section 11. The processed liquid collected in the liquid receiving section 11 flows into the pod drainage pipe 62. The pod drainage pipe 62 extends from the bottom of the liquid receiving section 11 to the outside of the processing chamber 200a.

[0057] The cup drain pipe 63 is a tubular component. One end of the cup drain pipe 63 is connected to the bottom of the cup section 7. More specifically, one end of the cup drain pipe 63 is connected to the bottom of the cup liquid receiving section 72. The processed liquid collected in the cup section 7 (cup liquid receiving section 72) flows into the cup drain pipe 63. The cup drain pipe 63 extends from the bottom of the cup section 7 (cup liquid receiving section 72) to the outside of the processing chamber 200a.

[0058] The liquid supply mechanism 8 is controlled by the control device 101 (control unit 102) to selectively supply multiple types of processing liquid to the nozzle 3. Specifically, the liquid supply mechanism 8 includes a supply pipe 81. The supply pipe 81 is a tubular member. One end of the supply pipe 81 is connected to the nozzle 3. The supply pipe 81 allows the processing liquid to flow to the nozzle 3. As the processing liquid flows to the nozzle 3 via the supply pipe 81, the processing liquid is discharged from the nozzle 3. The processing chamber 200a houses a portion of the supply pipe 81. The supply pipe 81 extends from the nozzle 3 to the outside of the processing chamber 200a.

[0059] The suck-back mechanism 9 is controlled by the control device 101 (control unit 102) to perform the suck-back process. The suck-back process involves drawing the processing liquid from the nozzle 3 into the supply pipe 81. The suck-back process is performed when the discharge of the processing liquid from the nozzle 3 is stopped. More specifically, the suck-back process is performed when the supply of processing liquid by the liquid supply mechanism 8 is stopped. More specifically, the suck-back process is performed after the discharge of multiple types of processing liquid from the nozzle 3 to the substrate W is completed. Specifically, the suck-back mechanism 9 includes a suck-back pipe 91 and a suck-back valve 92.

[0060] One end of the suck-back piping 91 is connected to the supply piping 81. The processing chamber 200a houses a portion of the suck-back piping 91. The suck-back piping 91 extends from the connection point SP between the suck-back piping 91 and the supply piping 81 to the outside of the processing chamber 200a.

[0061] The suck-back valve 92 is installed in the suck-back piping 91. The suck-back valve 92 can change the volume of its internal flow path. The control device 101 (control unit 102) enlarges the internal flow path of the suck-back valve 92 during the suck-back process. When the internal flow path of the suck-back valve 92 enlarges, the processing liquid accumulated between the suck-back valve 92 and the connection point SP flows downstream in the suck-back piping 91, and the processing liquid accumulated between the tip of the nozzle 3 and the connection point SP is drawn from the connection point SP into the suck-back piping 91. As a result, the processing liquid is sucked back (retracted) from the nozzle 3 to the supply piping 81. The control device 101 (control unit 102) also reduces the volume of the internal flow path of the suck-back valve 92 when the suck-back process is not being performed.

[0062] Next, the liquid supply mechanism 8 will be further described. As shown in Figure 2, in addition to the supply piping 81, the liquid supply mechanism 8 further includes a switching valve 82, a multi-way valve 83, the first piping CP1 to the sixth piping CP6, and the first on-off valve VA1 to the fifth on-off valve VA5. The switching valve 82, the multi-way valve 83, the first piping CP1 to the sixth piping CP6, and the first on-off valve VA1 to the fifth on-off valve VA5 are located outside the processing chamber 200a. In this embodiment, the liquid supply mechanism 8 selectively supplies DHF (acidic chemical solution), SC1 (alkaline chemical solution), and DIW (rinse solution) to the nozzle 3.

[0063] The supply pipe 81 is connected to the secondary side of the switching valve 82. One end of the first pipe CP1 and one end of the sixth pipe CP6 are connected to the primary side of the switching valve 82. One end of the second pipe CP2 is connected to the first pipe CP1. One end of the third pipe CP3 to the fifth pipe CP5 are connected to the primary side of the multi-way valve 83. The other end of the sixth pipe CP6 is connected to the secondary side of the multi-way valve 83.

[0064] The first to fifth on / off valves VA1 to VA5 are installed in the first to fifth pipes CP1 to CP5, respectively. Each of the first to fifth on / off valves VA1 to VA5 can be switched between an open state and a closed state. The open / closed state of each of the first to fifth on / off valves VA1 to VA5 is controlled by the control device 101 (control unit 102). While the first to fifth on / off valves VA1 to VA5 are in the closed state, the supply of processing liquid from the liquid supply mechanism 8 to the nozzle 3 is stopped.

[0065] The first pipe CP1 selectively flows DHF and DIW to the switching valve 82. The second pipe CP2 flows DIW to the first pipe CP1. Specifically, by opening the first on-off valve VA1 and closing the second on-off valve VA2, DHF flows to the switching valve 82 via the first pipe CP1. Also, by opening the second on-off valve VA2 and closing the first on-off valve VA1, DIW flows to the switching valve 82 via the second pipe CP2 and the first pipe CP1. In this way, the first on-off valve VA1 controls the supply of DHF to the primary side of the switching valve 82 and the cessation of the supply of DHF to the primary side of the switching valve 82. The second on-off valve VA2 controls the supply of DIW to the primary side of the switching valve 82 and the cessation of the supply of DIW to the primary side of the switching valve 82.

[0066] The third pipe CP3 allows ammonia water (NH4OH) to flow to the multi-way valve 83. Specifically, by opening the third on-off valve VA3, ammonia water flows through the third pipe CP3 to the multi-way valve 83. In this way, the third on-off valve VA3 controls the supply of ammonia water to the primary side of the multi-way valve 83 and the cessation of the supply of ammonia water to the primary side of the multi-way valve 83.

[0067] Similarly, the fourth pipe CP4 circulates hydrogen peroxide (H2O2) to the multi-way valve 83. The fifth pipe CP5 circulates DIW to the multi-way valve 83. The fourth on / off valve VA4 controls the supply of hydrogen peroxide to the primary side of the multi-way valve 83 and the cessation of the supply of hydrogen peroxide to the primary side of the multi-way valve 83. The fifth on / off valve VA5 controls the supply of DIW to the primary side of the multi-way valve 83 and the cessation of the supply of DIW to the primary side of the multi-way valve 83.

[0068] When supplying SC1 to nozzle 3, the control device 101 (control unit 102) opens the third on-off valve VA3 to the fifth on-off valve VA5 and supplies ammonia water, hydrogen peroxide, and DIW to the multi-way valve 83. As a result, the ammonia water, hydrogen peroxide, and DIW are mixed inside the multi-way valve 83 to produce SC1. The sixth pipe CP6 circulates SC1 from the multi-way valve 83 to the switching valve 82. In other words, the sixth pipe CP6 supplies SC1 to the switching valve 82.

[0069] The switching valve 82 is controlled by the control device 101 (control unit 102) to selectively supply DHF (acidic chemical solution), SC1 (alkaline chemical solution), and DIW (rinse solution) to the supply pipe 81. Specifically, when supplying DHF or DIW to the supply pipe 81, the switching valve 82 is controlled by the control device 101 (control unit 102) to connect the supply pipe 81 to the first pipe CP1. Also, when supplying SC1 to the supply pipe 81, the switching valve 82 is controlled by the control device 101 (control unit 102) to connect the supply pipe 81 to the sixth pipe CP6.

[0070] Next, the drainage mechanism 6 will be described with reference to Figures 1 to 4. Figure 4 is a schematic diagram showing the configuration of the drainage mechanism 6 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 4, the drainage mechanism 6 further includes a pod drainage pipe 62 and a cup drainage pipe 63, as well as a switching valve 64. The substrate processing apparatus 100 further includes a first drain pipe DP1, a second drain pipe DP2, and a drain tank 65.

[0071] The drainage mechanism 6 guides the acidic chemical solution (DHF) discharged from the liquid receiving section 11 (see Figures 2 and 3) during pre-dispense processing to the first drain pipe DP1. The drainage mechanism 6 also guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the liquid receiving section 11 (see Figures 2 and 3) during pre-dispense processing to the second drain pipe DP2.

[0072] Furthermore, the drainage mechanism 6 guides the acidic chemical solution (DHF) discharged from the cup section 7 (see Figures 2 and 3) during substrate processing to the first drain pipe DP1. The drainage mechanism 6 also guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the cup section 7 (see Figures 2 and 3) during substrate processing to the second drain pipe DP2.

[0073] Specifically, the other end of the cup drain pipe 63 is connected to the primary side of the switching valve 64. The other end of the pod drain pipe 62 is connected to the cup drain pipe 63. Therefore, the processing liquid discharged from the liquid receiving section 11 during pre-dispensing flows from the pod drain pipe 62 into the cup drain pipe 63 and then through the cup drain pipe 63 to the switching valve 64. Also, the processing liquid discharged from the cup section 7 during substrate processing flows through the cup drain pipe 63 to the switching valve 64.

[0074] One end of the first drain pipe DP1 and one end of the second drain pipe DP2 are connected to the secondary side of the switching valve 64. The switching valve 64 is controlled by the control device 101 (control unit 102) to supply acidic chemical solution (DHF) to the first drain pipe DP1 and alkaline chemical solution (SC1) and rinse solution (DIW) to the second drain pipe DP2. Specifically, when supplying DHF to the first drain pipe DP1, the switching valve 64 is controlled by the control device 101 (control unit 102) to connect the cup drain pipe 63 and the first drain pipe DP1. Also, when supplying SC1 or DIW to the second drain pipe DP2, the switching valve 64 is controlled by the control device 101 (control unit 102) to connect the cup drain pipe 63 and the second drain pipe DP2.

[0075] The other end of the second drain pipe DP2 is connected to the drain tank 65. Alkaline chemical solution (SC1) and rinsing solution (DIW) flow into the drain tank 65 from the second drain pipe DP2. The drain tank 65 is an example of a "liquid tank".

[0076] In this embodiment, the other end of the suck-back piping 91 is connected to the drain tank 65. Therefore, the suck-back mechanism 9 circulates the sucked-back processed liquid to the drain tank 65. Thus, the processed liquid sucked back by the suck-back mechanism 9 flows into the drain tank 65.

[0077] In this embodiment, the control device 101 (control unit 102) performs a suck-back process after the supply of the second rinse liquid (DIW) from the nozzle 3 to the substrate W has stopped. Therefore, the suck-back mechanism 9 circulates the sucked-back rinse liquid (DIW) to the drain tank 65. In other words, the rinse liquid (DIW) sucked back by the suck-back mechanism 9 flows into the drain tank 65.

[0078] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 6. The substrate processing method of this embodiment includes a method of pre-dispensing (preliminarily dispensing) the processing liquid from the nozzle 3 and a method of processing the substrate W. Figure 5 is a flowchart of the method of pre-dispensing (preliminarily dispensing) the processing liquid from the nozzle 3. Figure 6 is a flowchart of the method of processing the substrate W. The substrate processing methods shown in Figures 5 and 6 are performed by the substrate processing apparatus 100 described with reference to Figures 1 to 4. Therefore, Figures 5 and 6 show the operation of the substrate processing apparatus 100 of this embodiment.

[0079] As shown in Figure 5, during the pre-dispense process, the control device 101 (control unit 102) selectively discharges an acidic chemical solution (DHF), an alkaline chemical solution (SC1), and a rinse solution (DIW) from a nozzle 3 located at the standby position PS2.

[0080] Specifically, when the control device 101 (control unit 102) starts the pre-dispense process, it discharges an acidic chemical solution (DHF) from a nozzle 3 located at the standby position PS2 (step S1). The acidic chemical solution (DHF) discharged from the nozzle 3 is received by the liquid receiving section 11. The acidic chemical solution (DHF) discharged from the liquid receiving section 11 is then guided to the first drain pipe DP1 by the drainage mechanism 6.

[0081] The control device 101 (control unit 102) discharges rinse liquid (DIW) from a nozzle 3 located at the standby position PS2 after the acidic chemical solution (DHF) has been discharged (step S2). The rinse liquid (DIW) discharged from the nozzle 3 is received by the liquid receiving section 11. The rinse liquid (DIW) discharged from the liquid receiving section 11 is then guided to the second drain pipe DP2 by the drainage mechanism 6.

[0082] The control device 101 (control unit 102) discharges alkaline chemical solution (SC1) from a nozzle 3 located at the standby position PS2 after the rinsing liquid (DIW) has been discharged (step S3). The alkaline chemical solution (SC1) discharged from the nozzle 3 is received by the liquid receiving section 11. The alkaline chemical solution (SC1) discharged from the liquid receiving section 11 is then guided to the second drain pipe DP2 by the drainage mechanism 6.

[0083] The control device 101 (control unit 102) discharges rinse liquid (DIW) again from the nozzle 3 located at the standby position PS2 after the alkaline chemical solution (SC1) has been discharged (step S4). As a result, the pre-dispense process shown in Figure 5 is completed. Similar to step S2, the rinse liquid (DIW) discharged from the nozzle 3 is led to the second drain pipe DP2.

[0084] After the pre-dispense process is completed, the substrate processing is performed. Specifically, as shown in Figure 6, the control device 101 (control unit 102) controls the center robot CR to transport the substrate W into the processing chamber 200a (step S11). Then, the control device 101 (control unit 102) causes the substrate holding unit 2 to hold the substrate W. Once the substrate holding unit 2 holds the substrate W, the control device 101 (control unit 102) controls the lifting unit 73 to move the cup unit 7 from the lower position to the upper position.

[0085] After moving the cup section 7 from the lower position to the upper position, the control device 101 (control unit 102) controls the substrate rotation section 4 to rotate the substrate W. The control device 101 (control unit 102) also controls the nozzle movement section 5 to move the nozzle 3 from the standby position PS2 to the processing position PS1. When the rotation speed of the substrate W reaches a predetermined rotation speed, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to selectively discharge acidic chemical solution (DHF), alkaline chemical solution (SC1), and rinse solution (DIW) from the nozzle 3 toward the rotating substrate W.

[0086] Specifically, when the substrate processing starts, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to supply acidic chemical solution (DHF) to the nozzle 3. As a result, the acidic chemical solution (DHF) is discharged from the nozzle 3 and supplied to the rotating substrate W (step S12).

[0087] The control device 101 (control unit 102) supplies the acidic chemical solution (DHF) from the nozzle 3 to the substrate W until a first predetermined time has elapsed since the start of the discharge of the acidic chemical solution (DHF). As a result, a liquid film of the acidic chemical solution (DHF) is formed on the upper surface of the substrate W. The acidic chemical solution (DHF) discharged from the substrate W during the supply of the acidic chemical solution (DHF) is received in the cup section 7. The acidic chemical solution (DHF) received in the cup section 7 is guided to the first drain pipe DP1 by the drainage mechanism 6.

[0088] Once the first predetermined period has elapsed, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to switch the processing liquid supplied to the nozzle 3 from the acidic chemical solution (DHF) to the rinsing liquid (DIW). As a result, the rinsing liquid (DIW) is discharged from the nozzle 3 and supplied to the rotating substrate W (step S13).

[0089] The control device 101 (control unit 102) starts discharging the rinse liquid (DIW) and supplies the rinse liquid (DIW) from the nozzle 3 to the substrate W until a second predetermined time has elapsed. As a result, a liquid film of the rinse liquid (DIW) is formed on the upper surface of the substrate W. In other words, the liquid film on the upper surface of the substrate W is replaced from a liquid film of acidic chemical solution (DHF) to a liquid film of the rinse liquid (DIW). The rinse liquid (DIW) discharged from the substrate W during the supply of the rinse liquid (DIW) is received by the cup section 7. The rinse liquid (DIW) received by the cup section 7 is guided to the second drain pipe DP2 by the drainage mechanism 6. As a result, the rinse liquid (DIW) flows into the drain tank 65 via the second drain pipe DP2.

[0090] Once the second predetermined period has elapsed, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to switch the processing liquid supplied to the nozzle 3 from rinsing liquid (DIW) to alkaline chemical solution (SC1). As a result, alkaline chemical solution (SC1) is discharged from the nozzle 3 and supplied to the rotating substrate W (step S14).

[0091] The control device 101 (control unit 102) supplies the alkaline chemical solution (SC1) from the nozzle 3 to the substrate W until a third predetermined time has elapsed since the start of discharge of the alkaline chemical solution (SC1). As a result, a liquid film of the alkaline chemical solution (SC1) is formed on the upper surface of the substrate W. In other words, the liquid film on the upper surface of the substrate W is replaced from a liquid film of the rinse solution (DIW) to a liquid film of the alkaline chemical solution (SC1). The alkaline chemical solution (SC1) discharged from the substrate W during the supply of the alkaline chemical solution (SC1) is received in the cup section 7. The alkaline chemical solution (SC1) received in the cup section 7 is guided to the second drain pipe DP2 by the drainage mechanism 6. As a result, the alkaline chemical solution (SC1) flows into the drain tank 65 via the second drain pipe DP2.

[0092] When the third predetermined period has elapsed, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to switch the processing liquid supplied to the nozzle 3 from alkaline chemical solution (SC1) to rinsing liquid (DIW). As a result, rinsing liquid (DIW) is discharged from the nozzle 3 and supplied to the rotating substrate W (step S15).

[0093] The control device 101 (control unit 102) supplies rinse liquid (DIW) from the nozzle 3 to the substrate W until a fourth predetermined time has elapsed since the start of discharge of the rinse liquid (DIW). As a result, a liquid film of rinse liquid (DIW) is formed on the upper surface of the substrate W. In other words, the liquid film on the upper surface of the substrate W is replaced from a liquid film of alkaline chemical solution (SC1) to a liquid film of rinse liquid (DIW). Rinse liquid (DIW) discharged from the substrate W during the supply of rinse liquid (DIW) is received by the cup section 7. The rinse liquid (DIW) received by the cup section 7 is guided to the second drain pipe DP2 by the drainage mechanism 6. As a result, rinse liquid (DIW) flows into the drain tank 65 via the second drain pipe DP2.

[0094] After the fourth predetermined time has elapsed, the control device 101 (control unit 102) controls the substrate rotation unit 4 to increase the rotation speed of the substrate W. As a result, the substrate W dries (step S16). The control device 101 (control unit 102) also controls the nozzle movement unit 5 to move the nozzle 3 from the processing position PS1 to the standby position PS2. After the fifth predetermined time has elapsed since the rotation speed of the substrate W was increased, the control device 101 (control unit 102) controls the substrate rotation unit 4 to stop the rotation of the substrate W.

[0095] When the control device 101 (control unit 102) stops the rotation of the substrate W, it controls the lifting unit 73 to move the cup unit 7 from the upper position to the lower position. When the cup unit 7 moves to the lower position, the control device 101 (control unit 102) controls the substrate holding unit 2 to release the substrate W. Then, the control device 101 (control unit 102) controls the center robot CR to transport the substrate W outside the processing chamber 200a (step S17). As a result, the process shown in Figure 6 is completed.

[0096] As described above with reference to Figures 1 to 6, according to this embodiment, multiple types of processing liquids can be selectively discharged from the same nozzle (nozzle 3). Therefore, when switching the type of processing liquid supplied to the substrate W, the supply of processing liquid to the substrate W is not interrupted. Thus, when switching the type of processing liquid supplied to the substrate W, it becomes less likely that the outer periphery of the substrate W will not be covered with a liquid film.

[0097] Furthermore, according to this embodiment, the acidic solution, alkaline solution, and rinse solution discharged during the pre-dispense process can be guided to the same drain piping as the acidic solution, alkaline solution, and rinse solution discharged during the substrate processing. As a result, mixing of the acidic solution and alkaline solution into the drain tank 65 can be avoided. Therefore, damage to the drain tank 65 due to reaction between the acidic solution and alkaline solution can be avoided.

[0098] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8. Figure 7(a) is a block diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. Figure 7(b) is a diagram showing an error message M displayed in the display unit 105 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 7(a), the substrate processing apparatus 100 further comprises an input unit 104 and a display unit 105.

[0099] The input unit 104 is a user interface device operated by the operator. The input unit 104 inputs instructions (control signals) corresponding to the operator's operations to the control unit 102. The input unit 104 also inputs data corresponding to the operator's operations to the control unit 102. The input unit 104 typically includes a keyboard and a mouse. The input unit 104 may also include a touch sensor. The touch sensor is superimposed on the display surface of the display unit 105 and generates a signal indicating the operator's touch operation on the display surface. The operator can input various instructions to the control unit 102 by touch operation.

[0100] For example, the input unit 104 is operated by an operator to input a first discharge sequence and a second discharge sequence. As already explained, the first discharge sequence indicates the sequence in which multiple types of processing liquids are discharged from the nozzle 3 toward the substrate W during substrate processing. The second discharge sequence indicates the sequence in which multiple types of processing liquids are discharged from the nozzle 3 toward the liquid receiving unit 11 during pre-dispense processing. Specifically, the operator operates the input unit 104 to create a pre-recipe YRP and a process recipe SRP.

[0101] The display unit 105 displays various screens. Typically, the display unit 105 is a display device such as a liquid crystal display device or an organic electroluminescence (EL) display device. For example, the display unit 105 selectively displays the input screen for the pre-recipe YRP and the input screen for the process recipe SRP.

[0102] In this embodiment, the memory unit 103 stores a first prohibition rule, which is a rule prohibiting the first discharge sequence, and a second prohibition rule, which is a rule prohibiting the second discharge sequence. The first prohibition rule indicates a rule prohibiting the setting of a discharge sequence in which an alkaline chemical solution is discharged after an acidic chemical solution. Similarly, the second prohibition rule indicates a rule prohibiting the setting of a discharge sequence in which an alkaline chemical solution is discharged after an acidic chemical solution.

[0103] If an operator operates the input unit 104 and inputs a first discharge sequence that falls under the first prohibition rule, the control unit 102 will not accept the setting of that first discharge sequence. Similarly, if an operator operates the input unit 104 and inputs a second discharge sequence that falls under the second prohibition rule, the control unit 102 will not accept the setting of that second discharge sequence.

[0104] Specifically, if an operator operates the input unit 104 and inputs a process recipe SRP that specifies a first discharge sequence that falls under the first prohibition rule, the control unit 102 will not accept the setting of that process recipe SRP. Similarly, if an operator operates the input unit 104 and inputs a pre-recipe YRP that specifies a second discharge sequence that falls under the second prohibition rule, the control unit 102 will not accept the setting of that pre-recipe YRP.

[0105] The control unit 102 may display an error message M on the display unit 105 when a first dispensing sequence that falls under the first prohibition rule is input. Similarly, the control unit 102 may display an error message M on the display unit 105 when a second dispensing sequence that falls under the second prohibition rule is input. As shown in Figure 7(b), the error message M may indicate, for example, that the recipe created by the operator needs to be corrected.

[0106] Specifically, if a process recipe SRP specifying a first discharge sequence that falls under the first prohibition rule is input, the control unit 102 may display an error message M on the display unit 105. Similarly, if a pre-recipe YRP specifying a second discharge sequence that falls under the second prohibition rule is input, the control unit 102 may display an error message M on the display unit 105.

[0107] The second prohibited rule will now be explained with reference to Figures 8(a) and 8(b). Figure 8(a) is a schematic diagram showing the first example of a pre-recipe YRP. Figure 8(b) is a schematic diagram showing the second example of a pre-recipe YRP. Hereafter, the first example of a pre-recipe YRP may be referred to as "First Pre-recipe YRP1," and the second example of a pre-recipe YRP may be referred to as "Second Pre-recipe YRP2."

[0108] As shown in Figure 8(a), the first pre-recipe YRP1 specifies that the acidic solution, alkaline solution, and rinse solution should be dispensed in the order of acidic solution, rinse solution, alkaline solution, and rinse solution. Therefore, the second dispensing sequence of the first pre-recipe YRP1 does not indicate a dispensing sequence in which the alkaline solution is dispensed after the acidic solution, and thus does not fall under the second prohibition rule. Accordingly, the control unit 102 accepts the setting of the first pre-recipe YRP1 (second dispensing sequence). Similarly, if a process recipe SRP specifying a first dispensing sequence that does not fall under the first prohibition rule is input, the control unit 102 also accepts the setting of that process recipe SRP (first dispensing sequence).

[0109] On the other hand, as shown in Figure 8(b), the second pre-recipe YRP2 specifies that the acidic solution, alkaline solution, and rinse solution should be dispensed in the order of acidic solution, alkaline solution, and rinse solution. Therefore, the second dispensing order of the second pre-recipe YRP2 indicates a dispensing order in which the alkaline solution is dispensed after the acidic solution, and thus falls under the second prohibition rule. Accordingly, the control unit 102 does not accept the setting of the second pre-recipe YRP2 (second dispensing order) and displays the error message M on the display unit 105, as explained with reference to Figure 7(b).

[0110] Similarly, if a process recipe SRP specifying a first discharge sequence that falls under the first prohibition rule is input, the control unit 102 will not accept the setting of that process recipe SRP (first discharge sequence) and will display an error message M on the display unit 105, as explained with reference to Figure 7(b).

[0111] According to this embodiment, since the alkaline chemical solution is not discharged after the acidic chemical solution is discharged, it is possible to avoid damage to the cup portion 7 during substrate processing, for example, due to a reaction between the acidic and alkaline chemical solutions in the cup portion 7. Similarly, during pre-dispensing, it is possible to avoid damage to the liquid receiving portion 11, for example, due to a reaction between the acidic and alkaline chemical solutions in the liquid receiving portion 11.

[0112] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 7 and Figure 9. In this embodiment, the storage unit 103 further stores a third prohibition rule. The third prohibition rule indicates a rule that prohibits the operation of the suck-back mechanism 9 when the processing liquid last discharged from the nozzle 3 during substrate processing is a processing liquid other than the rinse liquid. Specifically, if an operator operates the input unit 104 and inputs a process recipe SRP that defines a first discharge sequence corresponding to the third prohibition rule, the control unit 102 does not perform the suck-back process.

[0113] Here, the third prohibited rule will be explained with reference to Figures 9(a) and 9(b). Figure 9(a) is a schematic diagram showing the first example of a process recipe SRP. Figure 9(b) is a schematic diagram showing the second example of a process recipe SRP. Hereafter, the first example of a process recipe SRP may be referred to as "First Process Recipe SRP11," and the second example of a process recipe SRP may be referred to as "Second Process Recipe SRP12."

[0114] As shown in Figure 9(a), the first process recipe SRP11 specifies the discharge sequence (first discharge sequence) in which the rinse liquid (DIW) is discharged last from the nozzle 3 during substrate processing. Therefore, the first process recipe SRP11 does not fall under Rule 3. Accordingly, the control unit 102 activates the suck-back mechanism 9 to perform the suck-back process after the second rinse liquid has been discharged from the nozzle 3.

[0115] On the other hand, as shown in Figure 9(b), the second process recipe SRP12 specifies the discharge sequence (first discharge sequence) in which the acidic chemical (DHF) is discharged last from the nozzle 3 during substrate processing. Therefore, the second process recipe SRP12 falls under the third prohibition rule. Consequently, the control unit 102 does not activate the suck-back mechanism 9 after the acidic chemical (DHF) has been discharged from the nozzle 3. In other words, the control unit 102 does not perform the suck-back process.

[0116] According to this embodiment, if the processing liquid discharged last from the nozzle 3 in the first discharge sequence is a processing liquid other than the rinsing liquid, the operation of the suck-back mechanism 9 is prohibited, and only the rinsing liquid flows from the suck-back mechanism 9 into the drain tank 65. Therefore, it is possible to avoid damage to the drain tank 65 caused by the reaction of acidic and alkaline chemicals in the drain tank 65.

[0117] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 6 and Figure 10. Figure 10 is a diagram showing the timing of supplying processing liquid to the nozzle 3. In Figure 10, the horizontal axis represents time t. Also, in Figure 10, "ON" indicates supplying processing liquid to the nozzle 3, and "OFF" indicates stopping the supply of processing liquid to the nozzle 3.

[0118] In this embodiment, the control device 101 (control unit 102) stops the discharge of the processing liquid at a timing different from the processing liquid discharge stop timing specified in the process recipe SRP. Specifically, the control device 101 (control unit 102) stops the discharge of the processing liquid at a timing later than the processing liquid discharge stop timing specified in the process recipe SRP.

[0119] More specifically, the control device 101 (control unit 102) controls the supply of processing liquid to the nozzle 3 and, when switching the type of processing liquid discharged from the nozzle 3 onto the substrate W, delays the timing of stopping the supply of the processing liquid already being discharged from the nozzle 3, thereby supplying two types of processing liquid to the nozzle 3 simultaneously for a certain period of time. In other words, the control device 101 (control unit 102) controls the liquid supply mechanism 8 to delay the timing of stopping the supply of the processing liquid.

[0120] Specifically, as shown in Figure 10, the control device 101 (control unit 102) starts supplying the first rinse solution (DIW) at time t1, and then stops supplying the acidic chemical solution (DHF) at time t2. Therefore, from time t1 to time t2, the acidic chemical solution (DHF) and the rinse solution (DIW) are supplied to the nozzle 3 simultaneously for a certain period of time. As a result, the acidic chemical solution (DHF) and the rinse solution (DIW) are discharged from the nozzle 3 simultaneously.

[0121] Similarly, the control device 101 (control unit 102) starts supplying the alkaline chemical solution (SC1) at time t3, and then stops supplying the first rinse solution (DIW) at time t4. Therefore, from time t3 to time t4, the rinse solution (DIW) and the alkaline chemical solution (SC1) are supplied to the nozzle 3 simultaneously for a certain period of time. As a result, the rinse solution (DIW) and the alkaline chemical solution (SC1) are discharged from the nozzle 3 simultaneously.

[0122] Furthermore, the control device 101 (control unit 102) starts supplying the second rinse solution (DIW) at time t5, and then stops supplying the alkaline chemical solution (SC1) at time t6. Therefore, from time t5 to time t6, the rinse solution (DIW) and the alkaline chemical solution (SC1) are supplied to the nozzle 3 simultaneously for a certain period of time. As a result, the rinse solution (DIW) and the alkaline chemical solution (SC1) are discharged from the nozzle 3 simultaneously.

[0123] According to this embodiment, the supply of the next processing liquid can be started before the discharge of the processing liquid already being discharged from the nozzle 3 is stopped. Therefore, when switching the type of processing liquid supplied to the substrate W, the supply of processing liquid to the substrate W is less likely to be interrupted. Thus, when switching the type of processing liquid supplied to the substrate W, it becomes less likely that the outer periphery of the substrate W will not be covered with a liquid film.

[0124] [Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to Figures 11 and 12. However, only the differences from Embodiment 1 will be described, and the same matters as in Embodiment 1 will be omitted. In Embodiment 2, unlike Embodiment 1, the substrate processing unit 200 includes a first liquid receiving unit 11a and a second liquid receiving unit 11b. Also, the configuration of the drainage mechanism 6 in Embodiment 2 differs from that of Embodiment 1.

[0125] Figure 11 is a schematic diagram showing the internal configuration of the substrate processing unit 200, the configuration of the drainage mechanism 6, and the configuration of the liquid supply mechanism 8 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 11, in this embodiment, the substrate processing unit 200 includes a first liquid receiving section 11a and a second liquid receiving section 11b. The drainage mechanism 6 also includes a first pod drainage pipe 62a and a second pod drainage pipe 62b.

[0126] The first liquid receiving section 11a and the second liquid receiving section 11b are located outside the substrate holding section 2. In this embodiment, the first liquid receiving section 11a and the second liquid receiving section 11b are located outside the cup section 7. The first liquid receiving section 11a receives the alkaline chemical solution and rinse solution discharged from the nozzle 3 during the pre-dispense process. The second liquid receiving section 11b receives the acidic chemical solution discharged from the nozzle 3 during the pre-dispense process. The first liquid receiving section 11a and the second liquid receiving section 11b are, for example, standby pods.

[0127] The first pod drain pipe 62a and the second pod drain pipe 62b are tubular members. One end of the first pod drain pipe 62a is connected to the bottom of the first liquid receiving section 11a. The processed liquid collected in the first liquid receiving section 11a flows into the first pod drain pipe 62a. The first pod drain pipe 62a extends from the bottom of the first liquid receiving section 11a to the outside of the processing chamber 200a. Similarly, one end of the second pod drain pipe 62b is connected to the bottom of the second liquid receiving section 11b. The processed liquid collected in the second liquid receiving section 11b flows into the second pod drain pipe 62b. The second pod drain pipe 62b extends from the bottom of the second liquid receiving section 11b to the outside of the processing chamber 200a.

[0128] Figure 12 is a schematic diagram showing the configuration of the drainage mechanism 6 included in the substrate processing apparatus 100 of this embodiment. In this embodiment, the drainage mechanism 6 guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the first liquid receiving section 11a (see Figure 11) during pre-dispense processing to the second drain pipe DP2. The drainage mechanism 6 also guides the acidic chemical solution (DHF) discharged from the second liquid receiving section 11b (see Figure 11) during pre-dispense processing to the first drain pipe DP1.

[0129] Specifically, the other end of the first pod drain pipe 62a, as described with reference to Figure 11, is connected to the second drain pipe DP2. Also, the other end of the second pod drain pipe 62b, as described with reference to Figure 11, is connected to the first drain pipe DP1.

[0130] Therefore, the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the first liquid receiving section 11a during pre-dispense processing are guided to the second drain pipe DP2 via the first pod drain pipe 62a. As a result, the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the nozzle 3 during pre-dispense processing flow into the drain tank 65. In addition, the acidic chemical solution (DHF) discharged from the second liquid receiving section 11b during pre-dispense processing is guided to the first drain pipe DP1 via the second pod drain pipe 62b.

[0131] Embodiment 2 of the present invention has been described above with reference to Figures 11 and 12. According to Embodiment 2, similar to Embodiment 1, when the type of processing liquid supplied to the substrate W is switched, it becomes less likely that the outer periphery of the substrate W will not be covered with a liquid film. Also, similar to Embodiment 1, it is possible to avoid damage to the drain tank 65 due to a reaction between the acidic chemical solution and the alkaline chemical solution in the drain tank 65.

[0132] [Embodiment 3] Next, Embodiment 3 of the present invention will be described with reference to Figures 13 to 16. However, only the differences from Embodiments 1 and 2 will be described, and the same matters as in Embodiments 1 and 2 will be omitted. In Embodiment 3, unlike Embodiment 1, the cup portion 7 includes a first cup portion 7a and a second cup portion 7b. Also, the configuration of the drainage mechanism 6, the suck-back mechanism 9, and the liquid supply mechanism 8 in Embodiment 3 differ from those in Embodiments 1 and 2.

[0133] Figure 13 is a schematic diagram showing the internal configuration of the substrate processing unit 200, the drainage mechanism 6, and the liquid supply mechanism 8 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 13, in the substrate processing apparatus 100 of this embodiment, the liquid supply mechanism 8 selectively supplies DHF, SC1, DIW, and isopropyl alcohol (IPA) to the nozzle 3. Therefore, the nozzle 3 selectively discharges DHF (acidic chemical solution), SC1 (alkaline chemical solution), DIW (rinse solution), and IPA. IPA is an example of an organic solvent.

[0134] Specifically, the liquid supply mechanism 8 further includes a sixth on-off valve VA6 and a seventh pipe CP7. The sixth on-off valve VA6 and the seventh pipe CP7 are located outside the processing chamber 200a. One end of the seventh pipe CP7 is connected to the second pipe CP2. The sixth on-off valve VA6 is provided on the seventh pipe CP7. The sixth on-off valve VA6 is switchable between an open state and a closed state. The open / closed state of the sixth on-off valve VA6 is controlled by a control device 101 (control unit 102). In this embodiment, while the first on-off valves VA1 to the sixth on-off valves VA6 are in the closed state, the supply of processing liquid from the liquid supply mechanism 8 to the nozzle 3 is stopped.

[0135] The seventh pipe CP7 carries IPA to the second pipe CP2. In this embodiment, the first pipe CP1 selectively carries DHF, DIW, and IPA to the switching valve 82. The second pipe CP2 selectively carries DIW and IPA to the first pipe CP1.

[0136] Specifically, by opening the first on-off valve VA1 and closing the second on-off valve VA2 and the sixth on-off valve VA6, DHF flows to the switching valve 82 via the first piping CP1. Similarly, by opening the second on-off valve VA2 and closing the first on-off valve VA1 and the sixth on-off valve VA6, DIW flows to the switching valve 82 via the second piping CP2 and the first piping CP1. Likewise, by opening the sixth on-off valve VA6 and closing the first on-off valve VA1 and the second on-off valve VA2, IPA flows to the switching valve 82 via the seventh piping CP7, the second piping CP2, and the first piping CP1. In this way, the sixth on-off valve VA6 controls the supply of IPA to the primary side of the switching valve 82 and the cessation of the supply of IPA to the primary side of the switching valve 82.

[0137] The switching valve 82 is controlled by the control device 101 (control unit 102) to selectively supply DHF (acidic chemical solution), SC1 (alkaline chemical solution), DIW (rinse solution), and IPA (organic solvent) to the supply pipe 81. Specifically, when supplying DHF, DIW, or IPA to the supply pipe 81, the switching valve 82 is controlled by the control device 101 (control unit 102) to connect the supply pipe 81 with the first pipe CP1. Also, when supplying SC1 to the supply pipe 81, the switching valve 82 is controlled by the control device 101 (control unit 102) to connect the supply pipe 81 with the sixth pipe CP6.

[0138] The cup portion 7 includes a first cup portion 7a and a second cup portion 7b. The first cup portion 7a includes a first guard portion 71a and a first cup liquid receiving portion 72a. The second cup portion 7b includes a second guard portion 71b and a second cup liquid receiving portion 72b. The configuration of the first cup portion 7a is the same as that of the cup portion 7 described with reference to Figure 2, so a detailed explanation is omitted.

[0139] The second guard portion 71b is positioned outside the first guard portion 71a. The second guard portion 71b has a substantially cylindrical shape. In other words, the second guard portion 71b surrounds the first guard portion 71a.

[0140] The second cup liquid receiving portion 72b is connected to the lower end of the second guard portion 71b. The second cup liquid receiving portion 72b is annular and forms an annular groove on the inside of the second guard portion 71b. Similar to the cup portion 7 described with reference to Figure 2, the processing liquid received by the second guard portion 71b is collected in the groove of the second cup liquid receiving portion 72b.

[0141] The lifting unit 73 raises and lowers the first cup section 7a and the second cup section 7b individually. When the lifting unit 73 receives the processing liquid discharged from the substrate W with the first cup section 7a, it moves the first cup section 7a to the upper position. When the lifting unit 73 receives the processing liquid discharged from the substrate W with the second cup section 7b, it keeps the first cup section 7a in the lower position. As a result, the second guard section 71b receives the processing liquid splashed from the rotating substrate W.

[0142] Specifically, the control device 101 (control unit 102) retracts the first cup portion 7a to a lower position during substrate processing. The control device 101 (control unit 102) also moves the first cup portion 7a to an upper position during drying. Therefore, the second cup portion 7b receives the processing liquid discharged from the substrate W during substrate processing, and the first cup portion 7a receives the processing liquid discharged from the substrate W during drying.

[0143] The drainage mechanism 6 includes a pod drainage pipe 62, a first cup drainage pipe 63a, a second cup drainage pipe 63b, a branch section 66, a first branch pipe 67a, and a second branch pipe 67b. The processing chamber 200a houses the pod drainage pipe 62, a portion of the first cup drainage pipe 63a, a portion of the second cup drainage pipe 63b, a branch section 66, a portion of the first branch pipe 67a, and a portion of the second branch pipe 67b.

[0144] The pod drain pipe 62 is a tubular component. One end of the pod drain pipe 62 is connected to the bottom of the liquid receiving section 11. The processed liquid collected in the liquid receiving section 11 flows into the pod drain pipe 62. The other end of the pod drain pipe 62 is connected to the branching section 66.

[0145] The first cup drain pipe 63a is a tubular member. One end of the first cup drain pipe 63a is connected to the bottom of the second cup section 7b. More specifically, one end of the first cup drain pipe 63a is connected to the bottom of the second cup liquid receiving section 72b. The processed liquid collected in the second cup section 7b (second cup liquid receiving section 72b) flows into the first cup drain pipe 63a. The first cup drain pipe 63a extends from the bottom of the second cup section 7b (second cup liquid receiving section 72b) to the outside of the processing chamber 200a.

[0146] The second cup drain pipe 63b is a tubular member. One end of the second cup drain pipe 63b is connected to the bottom of the first cup section 7a. More specifically, one end of the second cup drain pipe 63b is connected to the bottom of the first cup liquid receiving section 72a. The processed liquid collected in the first cup section 7a (first cup liquid receiving section 72a) flows into the second cup drain pipe 63b. The second cup drain pipe 63b extends from the bottom of the first cup section 7a (first cup liquid receiving section 72a) to the outside of the processing chamber 200a.

[0147] One end of the first branch pipe 67a and one end of the second branch pipe 67b are connected to the branch section 66. The first branch pipe 67a and the second branch pipe 67b are tubular members. The branch section 66 is controlled by the control device 101 (control unit 102) to connect the pod drain pipe 62 to one of the first branch pipe 67a and the second branch pipe 67b. The first branch pipe 67a and the second branch pipe 67b extend from the branch section 66 to the outside of the processing chamber 200a.

[0148] When the control device 101 (control unit 102) wants to allow the processed liquid collected in the liquid receiving section 11 to flow into the first branch pipe 67a, it controls the branch section 66 to connect the pod drain pipe 62 to the first branch pipe 67a. Similarly, when the control device 101 (control unit 102) wants to allow the processed liquid collected in the liquid receiving section 11 to flow into the second branch pipe 67b, it controls the branch section 66 to connect the pod drain pipe 62 to the second branch pipe 67b.

[0149] The suck-back mechanism 9 includes a suck-back pipe 91, a first branch pipe 91a, a second branch pipe 91b, and a suck-back valve 93. One end of the suck-back pipe 91 is connected to the supply pipe 81. The suck-back pipe 91 extends from the connection point SP between the suck-back pipe 91 and the supply pipe 81 to the suck-back valve 93. The processing chamber 200a houses the suck-back pipe 91.

[0150] The suck-back valve 93 is connected to one end of the first branch pipe 91a and one end of the second branch pipe 91b. The first branch pipe 91a and the second branch pipe 91b are tubular members. The suck-back valve 93 sucks back (retracts) the processing liquid from the nozzle 3 to the supply pipe 81, similar to the suck-back valve 92 described with reference to Figure 2. The processing chamber 200a houses the suck-back valve 93.

[0151] Furthermore, the suck-back valve 93 is controlled by the control device 101 (control unit 102) to connect the suck-back piping 91 to either the first branch piping 91a or the second branch piping 91b. The processing chamber 200a houses a portion of the first branch piping 91a and a portion of the second branch piping 91b. The first branch piping 91a and the second branch piping 91b extend from the suck-back valve 93 to the outside of the processing chamber 200a.

[0152] When the control device 101 (control unit 102) wants to allow the sucked-back processed liquid to flow into the first branch pipe 91a, it controls the suck-back valve 93 to connect the suck-back pipe 91 to the first branch pipe 91a. Similarly, when the control device 101 (control unit 102) wants to allow the sucked-back processed liquid to flow into the second branch pipe 91b, it controls the suck-back valve 93 to connect the suck-back pipe 91 to the second branch pipe 91b.

[0153] Next, the drainage mechanism 6 will be described with reference to Figure 14. Figure 14 is a schematic diagram showing the configuration of the drainage mechanism 6 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 14, the drainage mechanism 6 further includes a switching valve 64A. The substrate processing apparatus 100 also further includes a first drain pipe DP1, a second drain pipe DP2, a third drain pipe DP3, a first drain tank 65a, and a second drain tank 65b.

[0154] The drainage mechanism 6 guides the acidic chemical solution (DHF) discharged from the liquid receiving section 11 (see Figure 13) during pre-dispense processing to the first drain pipe DP1. The drainage mechanism 6 also guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the liquid receiving section 11 (Figure 13) during pre-dispense processing to the second drain pipe DP2. Furthermore, the drainage mechanism 6 guides the organic solvent (IPA) discharged from the liquid receiving section 11 (Figure 13) during pre-dispense processing to the third drain pipe DP3.

[0155] Furthermore, the drainage mechanism 6 guides the acidic chemical solution (DHF) discharged from the second cup section 7b (see Figure 13) during substrate processing to the first drain pipe DP1. In addition, the drainage mechanism 6 guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the second cup section 7b (see Figure 13) during substrate processing to the second drain pipe DP2. Furthermore, the drainage mechanism 6 guides the organic solvent (IPA) discharged from the second cup section 7b (see Figure 13) during substrate processing to the third drain pipe DP3.

[0156] Specifically, the other end of the first cup drain pipe 63a is connected to the primary side of the switching valve 64A. The other end of the first branch pipe 67a is connected to the first cup drain pipe 63a. Therefore, the processing liquid discharged from the liquid receiving section 11 during pre-dispensing flows from the first branch pipe 67a into the first cup drain pipe 63a and flows through the first cup drain pipe 63a to the switching valve 64A. Also, the processing liquid discharged from the second cup section 7b during substrate processing flows through the first cup drain pipe 63a to the switching valve 64A.

[0157] The secondary side of the switching valve 64A is connected to one end of the first drain pipe DP1, one end of the second drain pipe DP2, and one end of the third drain pipe DP3. The switching valve 64A is controlled by the control device 101 (control unit 102) to supply acidic chemical solution (DHF) to the first drain pipe DP1, alkaline chemical solution (SC1) and rinse solution (DIW) to the second drain pipe DP2, and organic solvent (IPA) to the third drain pipe DP3.

[0158] Specifically, when supplying DHF to the first drain pipe DP1, the switching valve 64A is controlled by the control device 101 (control unit 102) to connect the first cup drain pipe 63a and the first drain pipe DP1. Also, when supplying SC1 or DIW to the second drain pipe DP2, the switching valve 64A is controlled by the control device 101 (control unit 102) to connect the first cup drain pipe 63a and the second drain pipe DP2. Furthermore, when supplying IPA to the third drain pipe DP3, the switching valve 64A is controlled by the control device 101 (control unit 102) to connect the first cup drain pipe 63a and the third drain pipe DP3.

[0159] The other end of the second drain pipe DP2 is connected to the first drain tank 65a. Alkaline chemical solution (SC1) and rinsing solution (DIW) flow into the first drain tank 65a from the second drain pipe DP2. The first drain tank 65a is an example of a "liquid tank".

[0160] The other end of the first branch pipe 91a of the suck-back mechanism 9 is connected to the first cup drain pipe 63a. In this embodiment, the organic solvent (IPA) is sucked back. During the suck-back process, the drain mechanism 6 guides the sucked-back organic solvent (IPA) to the third drain pipe DP3. Specifically, the control device 101 (control unit 102) controls the switching valve 64A to connect the first cup drain pipe 63a to the third drain pipe DP3. As a result, the organic solvent (IPA) that flows from the suck-back mechanism 9 (first branch pipe 91a) into the first cup drain pipe 63a flows into the third drain pipe DP3.

[0161] The other end of the second cup drain pipe 63b is connected to the second drain tank 65b. The second cup drain pipe 63b allows the processing liquid discharged from the substrate W during the drying process to flow through it. Therefore, the processing liquid discharged from the substrate W during the drying process flows into the second drain tank 65b. In this embodiment, the processing liquid discharged from the substrate W during the drying process is an organic solvent (IPA). Therefore, the organic solvent (IPA) flows into the second drain tank 65b during the drying process.

[0162] In this embodiment, the other end of the second branch pipe 67b is connected to the second cup drain pipe 63b. Therefore, when the control device 101 (control unit 102) discharges organic solvent (IPA) from the nozzle 3 during pre-dispense processing, it may control the branch section 66 (see Figure 13) to connect the pod drain pipe 62 (see Figure 13) and the second branch pipe 67b. Furthermore, when the control device 101 (control unit 102) discharges rinse liquid (DIW) from the nozzle 3 during pre-dispense processing, it may control the branch section 66 (see Figure 13) to connect the pod drain pipe 62 (see Figure 13) and the second branch pipe 67b.

[0163] Furthermore, in this embodiment, the other end of the second branch pipe 91b of the suck-back mechanism 9 is connected to the second cup drain pipe 63b. Therefore, the control device 101 (control unit 102) may control the suck-back valve 93 during the suck-back process to connect the suck-back pipe 91 (see Figure 13) and the second branch pipe 91b.

[0164] Next, the substrate processing method of this embodiment will be described with reference to Figures 13 to 16. The substrate processing method of this embodiment includes a method of pre-dispensing (preliminarily dispensing) the processing liquid from the nozzle 3 and a method of processing the substrate W. Figure 15 is a flowchart of the method of pre-dispensing (preliminarily dispensing) the processing liquid from the nozzle 3. Figure 16 is a flowchart of the method of processing the substrate W. The substrate processing method shown in Figures 15 and 16 is performed by the substrate processing apparatus 100 shown in Figures 1, 4, 13, and 14. Therefore, Figures 15 and 16 show the operation of the substrate processing apparatus 100 of this embodiment.

[0165] As shown in Figure 15, during the pre-dispense process, the control device 101 (control unit 102) selectively discharges an acidic chemical solution (DHF), an alkaline chemical solution (SC1), a rinse solution (DIW), and an organic solvent (IPA) from a nozzle 3 located at the standby position PS2. Specifically, the pre-dispense process shown in Figure 15 includes steps S21 to S25. Here, the processes of steps S21 to S24 are the same as steps S1 to S4 described with reference to Figure 5, so their explanation is omitted.

[0166] After the second discharge of rinse liquid (DIW) (step S24), the control device 101 (control unit 102) discharges organic solvent (IPA) from the nozzle 3 located at the standby position PS2 (step S25). As a result, the pre-dispense process shown in Figure 15 is completed. The organic solvent (IPA) discharged from the nozzle 3 is received by the liquid receiving section 11. The organic solvent (IPA) discharged from the liquid receiving section 11 is then guided to the third drain pipe DP3 by the drainage mechanism 6.

[0167] After the pre-dispense process is completed, the substrate processing is performed. Specifically, as shown in Figure 16, the control device 101 (control unit 102) controls the center robot CR to transport the substrate W into the processing chamber 200a (step S31). Then, the control device 101 (control unit 102) causes the substrate holding unit 2 to hold the substrate W. Once the substrate holding unit 2 holds the substrate W, the control device 101 (control unit 102) controls the lifting unit 73 to move the second cup unit 7b from the lower position to the upper position.

[0168] The process in steps S32 to S35 shown in Figure 16 is the same as steps S12 to S35 described with reference to Figure 6, except that the processing liquid discharged from the substrate W is received by the second cup section 7b, so its explanation is omitted.

[0169] The control device 101 (control unit 102) controls the liquid supply mechanism 8 to switch the processing liquid supplied to the nozzle 3 from the rinsing liquid (DIW) to an organic solvent (IPA) after a fourth predetermined time has elapsed since the start of the second discharge of the rinsing liquid (DIW). As a result, the organic solvent (IPA) is discharged from the nozzle 3 and supplied to the rotating substrate W (step S36).

[0170] The control device 101 (control unit 102) supplies organic solvent (IPA) from the nozzle 3 to the substrate W until a sixth predetermined time has elapsed since the start of discharge of the organic solvent (IPA). As a result, a liquid film of organic solvent (IPA) is formed on the upper surface of the substrate W. In other words, the liquid film on the upper surface of the substrate W is replaced from a liquid film of rinse liquid (DIW) to a liquid film of organic solvent (IPA). The organic solvent (IPA) discharged from the substrate W during the supply of organic solvent (IPA) is received in the second cup section 7b. The organic solvent (IPA) received in the second cup section 7b is guided to the third drain pipe DP3 by the drainage mechanism 6.

[0171] When the sixth predetermined time has elapsed, the control device 101 (control unit 102) controls the lifting unit 73 to move the first cup unit 7a from the lower position to the upper position. When the first cup unit 7a moves to the upper position, the control device 101 (control unit 102) controls the substrate rotating unit 4 to increase the rotation speed of the substrate W. As a result, the substrate W dries (step S37). The control device 101 (control unit 102) also controls the nozzle moving unit 5 to move the nozzle 3 from the processing position PS1 to the standby position PS2. When the fifth predetermined time has elapsed since the rotation speed of the substrate W was increased, the control device 101 (control unit 102) controls the substrate rotating unit 4 to stop the rotation of the substrate W.

[0172] In this embodiment, the organic solvent (IPA) discharged from the substrate W during the drying process is received by the first cup section 7a. The organic solvent (IPA) received in the first cup section 7a is then guided to the second drain tank 65b by the drainage mechanism 6.

[0173] When the control device 101 (control unit 102) stops the rotation of the substrate W, it controls the lifting unit 73 to move the first cup section 7a and the second cup section 7b from the upper position to the lower position. When the first cup section 7a and the second cup section 7b move to the lower position, the control device 101 (control unit 102) controls the substrate holding unit 2 to release the substrate W. Then, the control device 101 (control unit 102) controls the center robot CR to transport the substrate W outside the processing chamber 200a (step S38). As a result, the process shown in Figure 16 is completed.

[0174] Embodiment 3 of the present invention has been described above with reference to Figures 13 to 16. According to Embodiment 3, similar to Embodiments 1 and 2, when the type of processing liquid supplied to the substrate W is switched, it becomes less likely that the outer periphery of the substrate W will not be covered with a liquid film. Also, similar to Embodiments 1 and 2, it is possible to avoid damage to the first drain tank 65a due to a reaction between the acidic chemical solution and the alkaline chemical solution in the first drain tank 65a.

[0175] In Embodiment 3, as in Embodiments 1 and 2, the setting of a discharge sequence (first discharge sequence and second discharge sequence) in which an alkaline chemical solution is discharged after an acidic chemical solution may be prohibited. Also, when switching the type of processing liquid discharged from nozzle 3 to substrate W, the timing of stopping the supply of the processing liquid already discharged from nozzle 3 may be delayed, and two types of processing liquids may be supplied to nozzle 3 simultaneously for a certain period of time.

[0176] [Embodiment 4] Next, Embodiment 4 of the present invention will be described with reference to Figures 17 and 18. However, only the differences from Embodiments 1 to 3 will be described, and the same matters as in Embodiments 1 to 3 will be omitted. In Embodiment 4, unlike Embodiments 1 to 3, the substrate processing unit 200 includes the first liquid receiving section 11a to the third liquid receiving section 11c. Also, the configuration of the drainage mechanism 6 in Embodiment 4 differs from that of Embodiments 1 to 3.

[0177] Figure 17 is a schematic diagram showing the internal configuration of the substrate processing unit 200, the drainage mechanism 6, and the liquid supply mechanism 8 included in the substrate processing apparatus 100 of this embodiment. In Embodiment 4, similar to Embodiment 3, an acidic chemical solution (DHF), an alkaline chemical solution (SC1), a rinse solution (DIW), and an organic solvent (IPA) are selectively discharged from the nozzle 3. Also, similar to Embodiment 3, the cup portion 7 includes a first cup portion 7a and a second cup portion 7b.

[0178] As shown in Figure 17, in this embodiment, the substrate processing unit 200 includes the first liquid receiving section 11a to the third liquid receiving section 11c. The drainage mechanism 6 also includes the first pod drainage pipe 62a to the third pod drainage pipe 62c.

[0179] The first liquid receiving section 11a to the third liquid receiving section 11c are located outside the substrate holding section 2. In this embodiment, the first liquid receiving section 11a to the third liquid receiving section 11c are located outside the cup section 7. The first liquid receiving section 11a receives the alkaline chemical solution and rinse solution discharged from the nozzle 3 during the pre-dispense process. The second liquid receiving section 11b receives the acidic chemical solution discharged from the nozzle 3 during the pre-dispense process. The third liquid receiving section 11c receives the organic solvent discharged from the nozzle 3 during the pre-dispense process. The first liquid receiving section 11a to the third liquid receiving section 11c are, for example, standby pods.

[0180] The configurations of the first pod drain pipe 62a and the second pod drain pipe 62b are the same as those described with reference to Figure 11, so their description is omitted here. The third pod drain pipe 62c is a tubular member. One end of the third pod drain pipe 62c is connected to the bottom of the third liquid receiving section 11c. The processing liquid (organic solvent) collected in the third liquid receiving section 11c flows into the third pod drain pipe 62c. The third pod drain pipe 62c extends from the bottom of the third liquid receiving section 11c to the outside of the processing chamber 200a.

[0181] Figure 18 is a schematic diagram showing the configuration of the drainage mechanism 6 included in the substrate processing apparatus 100 of this embodiment. In this embodiment, the drainage mechanism 6 guides the alkaline chemical solution (SC1) and rinse solution (DIW) discharged from the first liquid receiving section 11a (see Figure 17) during pre-dispense processing to the second drain pipe DP2. The drainage mechanism 6 also guides the acidic chemical solution (DHF) discharged from the second liquid receiving section 11b (see Figure 14) during pre-dispense processing to the first drain pipe DP1. In this embodiment, the drainage mechanism 6 also guides the organic solvent (IPA) discharged from the third liquid receiving section 11c (see Figure 14) during pre-dispense processing to the third drain pipe DP3.

[0182] Specifically, similar to Embodiment 2, the other end of the first pod drain pipe 62a, as described with reference to Figure 17, is connected to the second drain pipe DP2. Also, the other end of the second pod drain pipe 62b, as described with reference to Figure 17, is connected to the first drain pipe DP1.

[0183] In this embodiment, the other end of the third pod drain pipe 62c, as described with reference to Figure 17, is connected to the third drain pipe DP3. Therefore, the organic solvent (IPA) discharged from the third liquid receiving section 11c during pre-dispensing is guided to the third drain pipe DP3 via the third pod drain pipe 62c.

[0184] Embodiment 4 of the present invention has been described above with reference to Figures 17 and 18. According to Embodiment 4, similar to Embodiments 1 to 3, when the type of processing liquid supplied to the substrate W is switched, it becomes less likely that the outer periphery of the substrate W will not be covered with a liquid film. Also, similar to Embodiments 1 to 3, it is possible to avoid damage to the first drain tank 65a due to a reaction between the acidic chemical solution and the alkaline chemical solution in the first drain tank 65a.

[0185] Embodiments of the present invention have been described above with reference to the drawings (Figures 1 to 18). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some components from all the components shown in one embodiment may be added to the components of another embodiment, or some components from all the components shown in one embodiment may be deleted from the embodiment.

[0186] The drawings schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Furthermore, the configuration of each component shown in the above embodiments is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible without substantially departing from the effects of the present invention.

[0187] For example, in the embodiment described with reference to Figures 1 to 18, the substrate holding part 2 was a clamping type chuck that brought a plurality of chuck members 21 into contact with the peripheral edge surface of the substrate W. However, the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the substrate holding part 2 may be a vacuum type chuck or a Bernoulli type chuck.

[0188] Furthermore, in the embodiments described with reference to Figures 1 to 18, the rinsing solution was pure water, but the rinsing solution is not limited to pure water. The rinsing solution may be, for example, carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, or hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm).

[0189] Furthermore, in the embodiments described with reference to Figures 1 to 18, the operator created the pre-recipe YRP (second discharge sequence), but the control device 101 (control unit 102) may generate the pre-recipe YRP (second discharge sequence) based on the first discharge sequence specified in the process recipe SRP. For example, the control device 101 (control unit 102) may generate the second discharge sequence such that the discharge sequence of multiple types of processing liquids during pre-dispensing is the same as the discharge sequence of multiple types of processing liquids (first discharge sequence) during substrate processing. [Industrial applicability]

[0190] The present invention is useful for apparatus and method for processing substrates. [Explanation of Symbols]

[0191] 2: Board holding part 3: Nozzle 5: Nozzle movement section 6: Drainage mechanism 7: Cup section 7a: First Cup Section 7b: Second Cup Section 8:Liquid supply mechanism 9: Suckback mechanism 11: Liquid receiving section 11a: First liquid receiving section 11b: Second liquid receiving section 11c: Third liquid receiving section 65: Drain Tank 65a: First drain tank 81: Supply piping 91: Suckback piping 100: Substrate processing equipment 101: Control device 102: Control Unit 104: Input section DP1: First drain pipe DP2: Second drain pipe DP3: Third drain pipe PS1: Processing position PS2: Standby position SRP: Process Recipe SRP11: First Process Recipe SRP12: Second Process Recipe W: Circuit board YRP: Pre-recipe YRP1: First Pre-Recipe YRP2: 2nd Pre-Recipe

Claims

1. A nozzle that selectively discharges multiple types of treatment solutions, including acidic chemicals, alkaline chemicals, and rinsing solutions, A substrate holding section that holds the substrate, A liquid receiving section is provided on the outside of the substrate holding section to receive the processing liquid discharged from the nozzle, A drainage mechanism that guides the acidic chemical solution discharged from the liquid receiving section to a first drain pipe and the alkaline chemical solution discharged from the liquid receiving section to a second drain pipe, A nozzle moving unit moves the nozzle between a processing position facing the substrate held by the substrate holding unit and a standby position facing the liquid receiving unit. A substrate processing apparatus comprising:

2. The system further includes a control unit that controls the supply of the multiple types of processing liquids to the nozzle, The substrate processing apparatus according to claim 1, wherein the control unit, when switching the type of processing liquid to be discharged from the nozzle to the substrate, delays the timing of stopping the supply of the processing liquid that has been discharged in advance from the nozzle, and supplies two types of processing liquid to the nozzle simultaneously for a certain period of time.

3. A storage unit that stores the discharge order, which is the order in which the multiple types of processing liquids are discharged from the nozzle, An input unit operated by the user to input the aforementioned discharge sequence, A control unit that prohibits setting the discharge order to discharge the alkaline chemical solution after the acidic chemical solution. A substrate processing apparatus according to claim 1 or claim 2, further comprising the above.

4. A liquid tank into which the alkaline chemical solution flows from the second drain pipe, A supply pipe for selectively supplying the aforementioned multiple types of processing liquids to the nozzle, A suck-back mechanism is connected to the supply pipe and sucks back the processing liquid that is stagnant between the connection point with the supply pipe and the tip of the nozzle, and circulates the sucked-back processing liquid to the liquid tank. A control unit that prohibits the operation of the suck-back mechanism when, in the discharge sequence which is the sequence in which the multiple types of processing liquids are discharged from the nozzle toward the substrate, the processing liquid discharged last from the nozzle is a processing liquid other than the rinsing liquid, and A substrate processing apparatus according to claim 1 or claim 2, further comprising the above.

5. The system further comprises a cup portion for receiving the processing liquid discharged from the substrate, The substrate processing apparatus according to claim 1 or claim 2, wherein the drainage mechanism guides the acidic chemical solution discharged from the cup portion to the first drain pipe and the alkaline chemical solution discharged from the cup portion to the second drain pipe.

6. The aforementioned liquid receiving section is A first liquid receiving section for receiving the aforementioned acidic chemical solution, A second liquid receiving section that receives the aforementioned alkaline chemical solution and Includes, The substrate processing apparatus according to claim 1 or claim 2, wherein the drainage mechanism guides the acidic chemical solution discharged from the first liquid receiving section to the first drain pipe and the alkaline chemical solution discharged from the second liquid receiving section to the second drain pipe.

7. A storage unit that stores the discharge sequence, which is the order in which the multiple types of processing liquids are discharged from the nozzle to the substrate, A control unit that generates an order for discharging the multiple types of processing liquids from the nozzle to the liquid receiving section based on the discharge order, and A substrate processing apparatus according to claim 1 or claim 2, further comprising the above.

8. The aforementioned multiple types of processing solutions further contain organic solvents, The substrate processing apparatus according to claim 1 or claim 2, wherein the drainage mechanism guides the acidic chemical solution discharged from the liquid receiving section to the first drain pipe, guides the alkaline chemical solution discharged from the liquid receiving section to the second drain pipe, and guides the organic solvent discharged from the liquid receiving section to the third drain pipe.

9. The system further comprises a cup portion for receiving the processing liquid discharged from the substrate, The substrate processing apparatus according to claim 8, wherein the drainage mechanism guides the acidic chemical solution discharged from the cup portion to the first drain pipe, the alkaline chemical solution discharged from the cup portion to the second drain pipe, and the organic solvent discharged from the cup portion to the third drain pipe.

10. The aforementioned liquid receiving section is A first liquid receiving section for receiving the aforementioned acidic chemical solution, A second liquid receiving section for receiving the aforementioned alkaline chemical solution, A third liquid receiving section that receives the aforementioned organic solvent and Includes, The substrate processing apparatus according to claim 8, wherein the drainage mechanism guides the acidic chemical solution discharged from the first liquid receiving section to the first drain pipe, the alkaline chemical solution discharged from the second liquid receiving section to the second drain pipe, and the organic solvent discharged from the third liquid receiving section to the third drain pipe.

11. A process of selectively discharging multiple types of processing liquids, including an acidic chemical solution, an alkaline chemical solution, and a rinsing solution, from a nozzle positioned opposite a liquid receiving section located on the outside of the substrate holding section that holds the substrate, A step of guiding the acidic chemical solution discharged from the liquid receiving section to the first drain pipe, A step of guiding the alkaline chemical solution discharged from the liquid receiving section to the second drain pipe, A step of moving the nozzle to a position facing the substrate and selectively discharging the plurality of processing liquids from the nozzle toward the substrate. A substrate processing method that includes this.

Images