Display apparatus, display module, and electronic device

Abstract

Provided is a display apparatus having high display quality. This display apparatus has a first light-emitting device, a second light-emitting device, a first insulating layer, and a filler layer. The first light-emitting device has a first electrode, a first semiconductor layer on the first electrode, and a shared electrode on the first semiconductor layer. The second light-emitting device has a second electrode, a second semiconductor layer on the second electrode, and the shared electrode on the second semiconductor layer. The first insulating layer has a region that is in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer. The filler layer has a region that overlaps with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer, with the first insulating layer therebetween. The shared electrode has a region that is in contact with the top surface of the filler layer.

Description

Display device, display module, and electronic device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof.

[0003] In recent years, there has been a demand for display devices that can be applied to virtual reality (VR), augmented reality (AR), substitutional reality (SR), or mixed reality (MR).

[0004] VR, AR, SR, and MR are collectively referred to as xR (Extended Reality). Display devices for xR are desired to have high resolution and high color reproducibility in order to enhance the sense of reality and immersion. Examples of display elements (also referred to as display devices) applicable to such display devices include light-emitting devices such as liquid crystal devices, organic electroluminescence (EL) devices, and light-emitting diode (LED) devices.

[0005] Patent Document 1 discloses a display device using micro LEDs.

[0006] International Publication No. 2019 / 220267

[0007] An object of one embodiment of the present invention is to provide a display device with high display quality.An object of one embodiment of the present invention is to provide a display device with high definition.An object of one embodiment of the present invention is to provide a display device with high resolution.An object of one embodiment of the present invention is to provide a display device with high luminance.An object of one embodiment of the present invention is to provide a display device with high contrast.An object of one embodiment of the present invention is to provide a display device with high reliability.An object of one embodiment of the present invention is to provide a novel display device.

[0008] An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high display quality.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high definition.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high resolution.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high luminance.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high contrast.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high reliability.An object of one embodiment of the present invention is to provide a novel method for manufacturing a display device.

[0009] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0010] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first insulating layer, and a filling layer. The first light-emitting device includes a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer. The second light-emitting device includes a second electrode, a second semiconductor layer on the second electrode, and a common electrode on the second semiconductor layer. The first insulating layer has a region in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer. The filling layer has a region overlapping with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer via the first insulating layer. The common electrode has a region in contact with a top surface of the filling layer.

[0011] The display device described above has a coloring layer and a color conversion layer, the coloring layer has an area that overlaps with the first light-emitting device via the color conversion layer, and the color conversion layer is a display device having a phosphor or quantum dots.

[0012] In the display device described above, the end of the filling layer is located on the first semiconductor layer and the second semiconductor layer, and the end of the filling layer has a tapered shape in cross section.

[0013] In the above-described display device, the end of the first insulating layer is located on the first semiconductor layer and the second semiconductor layer, and the end of the first insulating layer has a tapered shape in a cross-sectional view.

[0014] In the display device described above, the end of the filling layer is located outside the end of the first insulating layer.

[0015] In the above-described display device, the filling layer has a convex curved shape on the upper surface in a cross-sectional view.

[0016] The display device described above has a reflective layer, which is located between the first insulating layer and the filling layer, and has an area where the reflective layer overlaps with the side surfaces of the first semiconductor layer and the second semiconductor layer via the first insulating layer.

[0017] The display device described above has a second insulating layer, the second insulating layer has a region in contact with the top surface of the first semiconductor layer, and the filling layer has a region that overlaps with the top surface of the first semiconductor layer via the second insulating layer.

[0018] In the above-described display device, the end portion of the second insulating layer has a tapered shape in cross section.

[0019] In the above-described display device, the first insulating layer includes an inorganic material, and the filling layer includes an organic material.

[0020] In the above-described display device, the filler layer is an insulating display device.

[0021] In the above-mentioned display device, the filler layer is a display device that is electrically conductive.

[0022] In the above-described display device, the first semiconductor layer and the second semiconductor layer are compounds containing a Group 13 element and a Group 15 element, respectively.

[0023] The display device includes a layer having a first transistor and a second transistor, a first light-emitting device and a second light-emitting device disposed on the layer, the first light-emitting device electrically connected to the first transistor, and the second light-emitting device electrically connected to the second transistor.

[0024] One aspect of the present invention is a display module including the display device described above and at least one of a connector and an integrated circuit.

[0025] One embodiment of the present invention is an electronic device including the above-described display module and at least one of a housing, a battery, a camera, a speaker, and a microphone.

[0026] According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a display device with high definition can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a display device with high luminance can be provided. According to one embodiment of the present invention, a display device with high contrast can be provided. According to one embodiment of the present invention, a display device with high reliability can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0027] According to one embodiment of the present invention, a method for manufacturing a display device with high display quality can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high definition can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high resolution can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high luminance can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high contrast can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high reliability can be provided. According to one embodiment of the present invention, a method for manufacturing a novel display device can be provided.

[0028] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0029] FIG. 1A is a top view showing an example of a display device. FIG. 1B is a cross-sectional view showing an example of a display device. FIGS. 2A and 2B are cross-sectional views showing an example of a display device. FIGS. 3A and 3B are cross-sectional views showing an example of a display device. FIGS. 4A and 4B are cross-sectional views showing an example of a display device. FIGS. 5A and 5B are cross-sectional views showing an example of a display device. FIGS. 6A and 6B are cross-sectional views showing an example of a display device. FIGS. 7A and 7B are cross-sectional views showing an example of a display device. FIG. 8 is a cross-sectional view showing an example of a display device. FIGS. 9A and 9B are cross-sectional views showing an example of a display device. FIG. 10 is a cross-sectional view showing an example of a display device. FIGS. 11A and 11B are cross-sectional views showing an example of a display device. FIGS. 12A and 12B are perspective views showing an example of a manufacturing method of a display device. FIGS. 13A and 13B are cross-sectional views showing an example of a display device. FIGS. 14A and 14B are cross-sectional views showing an example of a display device. FIGS. 15A and 15B are cross-sectional views showing an example of a display device. FIG. 16A is a top view showing an example of a display device. FIG. 16B is a cross-sectional view showing an example of a display device. 17A to 17D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 18A to 18C are perspective views showing an example of a manufacturing method of a display device. FIGS. 19A and 19B are perspective views showing an example of a manufacturing method of a display device. FIGS. 20A to 20D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 21A to 21D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 22A to 22D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 23A to 23C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 24A and 24B are cross-sectional views showing an example of a display device. FIGS. 25A and 25B are cross-sectional views showing an example of a display device. FIGS. 26A to 26D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 27A to 27C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 28A to 28D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 29A to 29C are cross-sectional views showing an example of a manufacturing method of a display device. 30A and 30B are cross-sectional views showing an example of a method for manufacturing a display device, and FIGS. 31A to 31G are diagrams showing an example of a pixel.32A to 32K are diagrams showing an example of a pixel. FIGS. 33A and 33B are perspective views showing an example of a display device. FIG. 34 is a cross-sectional view showing an example of a display device. FIG. 35 is a cross-sectional view showing an example of a display device. FIG. 36 is a cross-sectional view showing an example of a display device. FIG. 37 is a cross-sectional view showing an example of a display device. FIG. 38 is a cross-sectional view showing an example of a display device. FIG. 39 is a cross-sectional view showing an example of a display device. FIG. 40 is a perspective view showing an example of a display device. FIG. 41A is a cross-sectional view showing an example of a display device. FIGS. 41B and 41C are cross-sectional views showing an example of a transistor. FIG. 42 is a cross-sectional view showing an example of a display device. FIG. 43 is a cross-sectional view showing an example of a display device. FIGS. 44A to 44D are diagrams showing an example of an electronic device. FIGS. 45A to 45F are diagrams showing an example of an electronic device. FIGS. 46A to 46G are diagrams showing an example of an electronic device.

[0030] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0031] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0032] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0033] The words "film" and "layer" can be interchangeable in some cases or depending on the situation. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0034] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0035] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first insulating layer, and a filling layer. The first light-emitting device and the second light-emitting device can be light-emitting diodes (LEDs). The light-emitting diodes preferably use an inorganic material as a light-emitting material. The first light-emitting device includes a first electrode, a common electrode, and an island-shaped first semiconductor layer sandwiched between the first electrode and the common electrode. The second light-emitting device includes a second electrode, a common electrode, and an island-shaped second semiconductor layer sandwiched between the second electrode and the common electrode.

[0036] In this specification, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like semiconductor layer refers to a state in which the semiconductor layer is physically separated from the adjacent semiconductor layer.

[0037] The first insulating layer has a region in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer. By providing the first insulating layer, diffusion of impurities into the first semiconductor layer and the second semiconductor layer can be suppressed, and a highly reliable display device can be obtained.

[0038] A filling layer is provided on the first insulating layer. A common electrode is provided on the filling layer. By providing the filling layer, a step occurring between the first light-emitting device and the second light-emitting device can be reduced, and coverage of the common electrode can be improved. The filling layer has a function of filling and planarizing the gap between the first light-emitting device and the second light-emitting device (also called LFP (Local Filling Planarization)).

[0039] In a display device according to one embodiment of the present invention, semiconductor layers and electrodes included in the light-emitting devices can be formed by photolithography. When the display device is fabricated on a glass substrate, the distance between adjacent light-emitting devices can be narrowed to, for example, less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. When the display device is fabricated on a single crystal substrate, the distance between adjacent light-emitting devices can be narrowed to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less by using an exposure apparatus for LSIs. This significantly reduces the area of ​​a non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. For example, in the display device according to one embodiment of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%. Furthermore, since the sizes of the semiconductor layers and electrodes of the light-emitting device can be made extremely small, a display device having both high definition and a high aperture ratio can be manufactured. In addition, a small and lightweight display device can be realized.

[0040] Specifically, the resolution of the display device of one embodiment of the present invention can be, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and can be 20000 ppi or less, or 30000 ppi or less.

[0041] In this embodiment, a structure and a manufacturing method of a display device according to one embodiment of the present invention will be described.

[0042] <Configuration Example 1-1> FIG. 1A shows a top view of a display device 100 according to one embodiment of the present invention. The display device 100 includes a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 located outside the display unit. Each pixel 110 includes a plurality of subpixels. FIG. 1A illustrates two rows and two columns of pixels 110. Each pixel 110 includes three subpixels (subpixel 110a, subpixel 110b, and subpixel 110c), resulting in two rows and six columns of subpixels. The connection unit 140 can also be referred to as a cathode contact unit.

[0043] Each subpixel has a light-emitting device. A light-emitting diode (LED) can be used as the light-emitting device. It is preferable to use an inorganic material as the light-emitting material of the light-emitting diode. By using an inorganic material as the light-emitting material, the life of the display device can be extended and the reliability can be improved. Furthermore, since light-emitting diodes are self-luminous devices, when light-emitting diodes are used as display devices, the display device does not require a backlight and does not need to be provided with a polarizing plate. Therefore, the power consumption of the display device can be reduced, and a thin and lightweight display device can be realized. Furthermore, a display device using light-emitting diodes has high brightness (for example, 5000 cd / m ２ or more, preferably 10,000 cd / m ２ Since high contrast and a wide viewing angle can be obtained, high display quality can be realized.

[0044] 1A corresponds to the top view shape of the light-emitting region of the light-emitting device, and may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0045] Each subpixel has a pixel circuit that controls a light-emitting device. The pixel circuit is not limited to the area of ​​the subpixel shown in FIG. 1A and may be located outside of it. For example, a transistor included in the pixel circuit of subpixel 110a may be located within the area of ​​subpixel 110b shown in FIG. 1A, or a part or all of the transistor may be located outside the area of ​​subpixel 110a.

[0046] 1A , the subpixels 110a, 110b, and 110c are shown to have the same or approximately the same aperture ratio (which can also be referred to as the size or the size of the light-emitting region), but this is not a limitation of one embodiment of the present invention. The aperture ratios of the subpixels 110a, 110b, and 110c can be determined as appropriate. The aperture ratios of the subpixels 110a, 110b, and 110c may be different from one another, or two or more of the aperture ratios may be equal or approximately equal.

[0047] A stripe arrangement is applied to the pixel 110 shown in FIG. 1A. The pixel 110 shown in FIG. 1A is composed of three subpixels: subpixel 110a, subpixel 110b, and subpixel 110c. The subpixels 110a, 110b, and 110c each have a light-emitting device that emits a different light color. Examples of the subpixels 110a, 110b, and 110c include three subpixels of red (R), green (G), and blue (B), and three subpixels of yellow (Y), cyan (C), and magenta (M). The number of subpixel colors is not limited to three and may be four or more. Examples of four-color subpixels include four subpixels of R, G, B, and white (W), four subpixels of R, G, B, and Y, and four subpixels of R, G, B, and infrared (IR).

[0048] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly (see FIG. 1A ). FIG. 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction.

[0049] Cross-sectional views taken along dashed dotted lines X1-X2 and Y1-Y2 in Fig. 1A are shown in Fig. 1B. Enlarged views of portions of the cross-sectional views shown in Fig. 1B are shown in Fig. 2A and Fig. 2B.

[0050] 1B, in the display device 100, a light-emitting device 130 is provided on a layer 101, and a protective layer 131 is provided so as to cover the light-emitting device 130. A substrate 120 is bonded onto the protective layer 131 with a resin layer 122.

[0051] The light-emitting device 130 includes a conductive layer 132, an LED layer 134 on the conductive layer 132, and a conductive layer 115 on the LED layer 134. The conductive layer 132 and the conductive layer 115 each function as an electrode of the light-emitting device 130. The LED layer 134 sandwiched between the pair of electrodes (the conductive layer 132 and the conductive layer 115) includes at least a light-emitting layer. The light-emitting device 130 shown in FIG. 1B can be referred to as a so-called vertically structured light-emitting diode, having the conductive layer 132 on one side of the LED layer 134 and the conductive layer 115 on the opposite side.

[0052] Next, the configuration of the light-emitting device 130 will be described with reference to Fig. 2A. Fig. 2A is an enlarged cross-sectional view of a region including two adjacent light-emitting devices 130 and their surrounding areas.

[0053] The light-emitting device 130 includes a conductive layer 132, a conductive layer 115, and an LED layer 134 sandwiched between the conductive layer 132 and the conductive layer 115. The LED layer 134 has a layered structure in which a semiconductor layer 186, a light-emitting layer 184, and a semiconductor layer 182 are stacked in this order. Note that the LED layer 134 may include layers other than the semiconductor layer 186, the light-emitting layer 184, and the semiconductor layer 182.

[0054] The light-emitting layer 184 is sandwiched between the semiconductor layer 186 and the semiconductor layer 182. In the light-emitting layer 184, light is emitted by the recombination of electrons and holes. One of the semiconductor layer 186 and the semiconductor layer 182 can be an n-type semiconductor layer, and the other can be a p-type semiconductor layer. The light-emitting layer 184 can be an n-type, i-type, or p-type semiconductor layer. The semiconductor layer 186, the light-emitting layer 184, and the semiconductor layer 182 can all be semiconductor layers. Therefore, the LED layer can be called a semiconductor layer.

[0055] The LED layer 134 is formed to emit light such as red light, yellow light, green light, blue light, or ultraviolet light. The configuration of the LED layer 134 is not particularly limited, and may be a homostructure, heterostructure, or double heterostructure having a pn junction or a pn junction, or may be a metal insulator semiconductor (MIS) junction. The LED layer 134 may have a superlattice structure, a single quantum well structure, or a multi-quantum well (MQW) structure. Furthermore, the LED layer 134 may use nanocolumns.

[0056] The LED layer 134 may be formed using, for example, a compound containing a Group 13 element and a Group 15 element. Examples of Group 13 elements include aluminum, gallium, and indium. Examples of Group 15 elements include nitrogen, phosphorus, arsenic, and antimony. The LED layer 134 may be formed using, for example, a gallium phosphide compound, a gallium arsenide compound, a gallium aluminum arsenide compound, an aluminum gallium indium phosphide compound, gallium nitride (GaN), an indium gallium nitride compound, or a selenium zinc compound.

[0057] For example, gallium nitride can be used for the LED layer 134 that emits light in the ultraviolet to blue wavelength range. An indium gallium nitride compound can be used for the LED layer 134 that emits light in the ultraviolet to green wavelength range. An aluminum gallium indium phosphide compound or a gallium arsenide compound can be used for the LED layer 134 that emits light in the green to red wavelength range. A gallium arsenide compound can be used for the LED layer 134 that emits light in the infrared wavelength range.

[0058] The layer 101 preferably includes a pixel circuit that controls the light-emitting device 130. The pixel circuit may include, for example, a transistor, a capacitor, and wiring. Figure 1B shows a transistor 105 as a transistor that constitutes the pixel circuit.

[0059] The layer 101 can have a structure in which a pixel circuit is provided on a semiconductor substrate or an insulating substrate. The semiconductor substrate can be a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate. The insulating substrate can be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate. The semiconductor substrate and the insulating substrate can be circular or rectangular. The semiconductor substrate and the insulating substrate can be a substrate having heat resistance at least sufficient to withstand subsequent heat treatment.

[0060] For example, a stacked structure of a substrate on which a plurality of transistors are provided and an insulating layer covering these transistors can be applied to the layer 101. The insulating layer on the transistors may have a single-layer structure or a stacked structure.

[0061] Note that the layer 101 may include, in addition to the pixel circuit, one or both of a gate line driver circuit (gate driver) and a source line driver circuit (source driver).Further, the layer 101 may include one or both of an arithmetic circuit and a memory circuit.

[0062] A conductive layer 111 is provided on the layer 101. The conductive layer 111 is electrically connected to the transistor 105 and functions as a pixel electrode. A connection layer 144 is provided on the conductive layer 111, and the light-emitting device 130 is provided on the connection layer 144. The connection layer 144 can be made of a conductive material. Examples of conductive materials that can be used include metals such as gold, silver, and tin, alloys containing these metals, conductive films, and conductive pastes. Gold, for example, can be used as the connection layer 144. The connection layer 144 can be formed by a printing method, a transfer method, or a discharging method. The conductive layer 132 of the light-emitting device 130 is electrically connected to the conductive layer 111 via the connection layer 144. The conductive layer 132, the connection layer 144, and the conductive layer 111 can collectively function as a pixel electrode. Note that a configuration in which the conductive layer 111 and the conductive layer 132 are in direct contact with each other and electrically connected may be used without providing the connection layer 144.

[0063] FIG. 1B illustrates an example in which the edges of the LED layer 134, conductive layer 132, connection layer 144, and conductive layer 111 are aligned or approximately aligned, i.e., the top surface shapes of the LED layer 134, conductive layer 132, connection layer 144, and conductive layer 111 are aligned or approximately aligned. For example, the LED layer 134, conductive layer 132, connection layer 144, and conductive layer 111 can be formed using the same mask. It is preferable that at least the edges of the LED layer 134 and conductive layer 132 are aligned or approximately aligned. This configuration allows the entire region where the conductive layer 132 is provided to be used as the light-emitting region of the light-emitting device 130, thereby increasing the aperture ratio of the pixel. Note that some edges of the LED layer 134, conductive layer 132, connection layer 144, and conductive layer 111 may not be aligned.

[0064] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it is also said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0065] The conductive layer 115 provided on the LED layer 134 is provided in common to the plurality of light-emitting devices 130 and functions as a common electrode.

[0066] The conductive layer 115 is electrically connected to a conductive layer 123 provided in the connection portion 140. The conductive layer 123 can be formed using the same material as the conductive layer 111. The conductive layer 123 can be formed in the same process as the conductive layer 111.

[0067] 1A shows an example in which the connection portion 140 is located below the display portion when viewed from above, but the location of the connection portion is not particularly limited. The connection portion 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display portion when viewed from above, and may be located so as to surround all four sides of the display portion. The shape of the top surface of the connection portion 140 is also not particularly limited, and may be strip-shaped, L-shaped, U-shaped, or frame-shaped. Furthermore, the connection portion 140 may be singular or plural.

[0068] As shown in FIGS. 1B and 2A , an insulating layer 125 and a filling layer 127 on the insulating layer 125 are provided between adjacent light-emitting devices 130. The insulating layer 125 is provided in contact with the side surfaces of the LED layer 134, the conductive layer 132, the connection layer 144, and the conductive layer 111, as well as the top surface of the layer 101. Furthermore, the insulating layer 125 preferably has a region in contact with a portion of the top surface of the LED layer 134. The filling layer 127 is provided on the insulating layer 125 so as to fill a recess formed in the insulating layer 125. The filling layer 127 preferably covers at least a portion of the side surface of the insulating layer 125. The filling layer 127 may have a region overlapping the side surface of the LED layer 134 via the insulating layer 125. A conductive layer 115 is provided on the filling layer 127.

[0069] By providing the insulating layer 125 and the filling layer 127, it is possible to reduce the step occurring between the region where the light-emitting device 130 is provided and the region where the light-emitting device 130 is not provided. Therefore, the unevenness of the surface on which the conductive layer 115, which functions as a common electrode, is formed is reduced, and the coverage of the conductive layer 115 can be improved. Therefore, it is possible to suppress connection defects due to step disconnections in the conductive layer 115. In addition, it is possible to suppress an increase in electrical resistance due to the conductive layer 115 becoming locally thinner due to the step.

[0070] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is separated due to the shape of the surface on which it is formed (for example, a step).

[0071] It is preferable that the filling layer 127 has a region whose upper surface is higher than the upper surface of the LED layer 134. The upper surface of the filling layer 127 preferably has a highly flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion. For example, it is preferable that the upper surface of the filling layer 127 has a highly flat, smooth convex curved shape.

[0072] A portion of the upper surface and the side surfaces of the LED layer 134 are covered with the insulating layer 125. The filling layer 127 has an area that overlaps with a portion of the upper surface and the side surfaces of the LED layer 134 via the insulating layer 125. Covering a portion of the upper surface and the side surfaces of the LED layer 134 with at least one of the insulating layer 125 and the filling layer 127 can suppress the intrusion of impurities. Therefore, deterioration of the light-emitting device 130 can be suppressed, and the reliability of the light-emitting device 130 can be improved.

[0073] The side surfaces of the conductive layer 132, the connection layer 144, and the conductive layer 111 are covered with the insulating layer 125. The filling layer 127 has an area that overlaps with the side surfaces of the conductive layer 132, the connection layer 144, and the conductive layer 111 via the insulating layer 125. Since the side surfaces of the conductive layer 132, the connection layer 144, and the conductive layer 111 are covered with at least one of the insulating layer 125 and the filling layer 127, it is possible to prevent the conductive layer 115 from contacting one or more of the conductive layer 132, the connection layer 144, and the conductive layer 111. Therefore, it is possible to prevent short circuits in the light-emitting device 130, and to improve the reliability of the light-emitting device 130.

[0074] The insulating layer 125 preferably contacts the side surface of the LED layer 134. By configuring the insulating layer 125 to contact the LED layer 134, peeling of the LED layer 134 can be suppressed. The insulating layer 125 and the LED layer 134 are in close contact with each other, which has the effect of fixing or bonding adjacent LED layers 134 by the insulating layer 125. This can improve the reliability of the light-emitting device 130. Furthermore, the manufacturing yield of the light-emitting device 130 can be increased.

[0075] For example, even if a material with low adhesion or low mechanical strength is used for the connection layer 144, by configuring the insulating layer 125 to be in contact with the side surfaces of the LED layer 134, the side surfaces of the conductive layer 132, the side surfaces of the conductive layer 111, and part of the top surface of the layer 101, the connection layer 144 is fixed, thereby preventing the connection layer 144 from peeling off and increasing its mechanical strength.

[0076] By covering a portion of the top surface and both the side surfaces of the LED layer 134 with the insulating layer 125 and the filling layer 127, peeling of the LED layer 134 can be further suppressed, thereby improving the reliability of the light-emitting device 130. In addition, the manufacturing yield of the light-emitting device 130 can be further improved.

[0077] 1B shows multiple cross sections of insulating layer 125 and filling layer 127, but in top view, insulating layer 125 and filling layer 127 are connected to one another. That is, display device 100 can be configured to have, for example, one insulating layer 125 and one filling layer 127. Note that display device 100 may have multiple insulating layers 125 that are separated from one another, or may have multiple filling layers 127 that are separated from one another.

[0078] Next, materials that can be used for the insulating layer 125 and the filling layer 127 will be described.

[0079] The insulating layer 125 may be an insulating layer containing an inorganic material. For example, inorganic insulating films such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, and an insulating nitride oxide film may be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a multilayer structure. Examples of insulating oxide films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of insulating nitride films include silicon nitride films and aluminum nitride films. Examples of insulating oxynitride films include silicon oxynitride films and aluminum oxynitride films. Examples of insulating nitride films include silicon nitride oxide films and aluminum nitride oxide films. Aluminum oxide is particularly preferred because it has a high etching selectivity with respect to the LED layer 134 and protects the LED layer 134 during the formation of the filling layer 127. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the LED layer 134. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0080] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0081] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0082] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability) or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0083] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0084] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the LED layer 134 from the insulating layer 125 and causing deterioration of the LED layer 134. Furthermore, by reducing the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both.

[0085] The filling layer 127 provided on the insulating layer 125 has the function of reducing the irregularities of the insulating layer 125 formed between adjacent light-emitting devices 130. In other words, the presence of the filling layer 127 has the effect of increasing the flatness of the surface on which the conductive layer 115 is formed.

[0086] An insulating layer containing an organic material can be suitably used for the filling layer 127. The organic material is preferably a photosensitive resin, such as a photosensitive acrylic resin. Note that in this specification and elsewhere, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0087] The filling layer 127 may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Alternatively, the filling layer 127 may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the photosensitive resin may be a photoresist. Either a positive-type material or a negative-type material may be used as the photosensitive resin.

[0088] It is preferable that the filling layer 127 is made of a material with low light transmittance, so that the filling layer 127 has a light-blocking property. The filling layer 127 may also be made of a material that absorbs visible light. The filling layer 127 blocks light emitted from the light-emitting device 130, thereby suppressing light (stray light) leaking from the light-emitting device 130 to other sub-pixels through the filling layer 127. This improves the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, a lightweight and thin display device can be realized.

[0089] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). Using a resin material in which two or more color filter materials are laminated or mixed is preferable because it can enhance the visible light blocking effect. In particular, mixing three or more color filter materials makes it possible to obtain a black or nearly black resin layer.

[0090] It is preferable that the material used for the filling layer 127 has a low volume shrinkage rate. This makes it easy to form the filling layer 127 in the desired shape. It is also preferable that the filling layer 127 has a low volume shrinkage rate after curing. This makes it easier to maintain the shape of the filling layer 127 in various processes after its formation. Specifically, the volume shrinkage rate of the filling layer 127 after thermal curing, after photocuring, or after photocuring and thermal curing is preferably 10% or less, more preferably 5% or less, and even more preferably 1% or less. Here, the volume shrinkage rate can be either the volume shrinkage rate due to light irradiation or the volume shrinkage rate due to heating, or the sum of both.

[0091] Although an insulating material has been described as an example of a material that can be used for the filling layer 127, the conductivity of the filling layer 127 is not particularly limited. A semiconductor material or a conductive material may be used for the filling layer 127. For example, by using a conductive material for the filling layer 127, the resistance of the display device to overcurrents generated by electrostatic discharge (ESD) can be increased. The filling layer 127 can be made of, for example, a resin in which metal particles are dispersed.

[0092] When a conductive material is used for the filling layer 127, it is preferable to provide an insulating layer 125 between the filling layer 127 and the conductive layer 132, the connection layer 144, and the conductive layer 111. By covering the side surfaces of the conductive layer 132, the connection layer 144, and the conductive layer 111 with the insulating layer 125, it is possible to prevent the conductive layer 115 from contacting one or more of the conductive layer 132, the connection layer 144, and the conductive layer 111 through the filling layer 127. Therefore, it is possible to prevent short circuits in the light-emitting device 130, and to improve the reliability of the light-emitting device 130.

[0093] 2A and 2B, the structure of the filler layer 127 and its vicinity will be described. Fig. 2B is an enlarged cross-sectional view of the end of the filler layer 127 on the LED layer 134 and its vicinity shown in Fig. 2A.

[0094] 2A and 2B, the end of the filling layer 127 is preferably located outside the end of the insulating layer 125. This reduces the unevenness of the surface on which the conductive layer 115 is formed (here, the filling layer 127 and the LED layer 134), thereby improving the coverage of the conductive layer 115. Furthermore, as shown in FIG. 2B, the end of the filling layer 127 is preferably tapered in cross section.

[0095] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined relative to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°. Note that the side surface of the structure, the substrate surface, and the surface to be formed do not necessarily have to be completely flat, and may be approximately planar with a slight curvature or approximately planar with a slight unevenness.

[0096] The angle θ1 between the side surface of the filling layer 127 and the surface on which it is to be formed (here, the LED layer 134) is preferably less than 90°, more preferably 60° or less, even more preferably 45° or less, and even more preferably 20° or less. By tapering the end of the filling layer 127, the conductive layer 115 provided on the filling layer 127 can be formed with high coverage and step discontinuities or localized thinning of the film thickness can be suppressed. This improves the in-plane uniformity of the film thickness and resistance of the conductive layer 115, thereby improving the display quality of the display device.

[0097] 2A, the upper surface of the filling layer 127 preferably has a convex curved shape in a cross-sectional view. The convex curved shape of the upper surface of the filling layer 127 preferably bulges gently toward the center. Furthermore, the convex curved portion at the center of the upper surface of the filling layer 127 preferably has a shape that is continuously connected to the tapered portions at the end. By forming the filling layer 127 in such a shape, the conductive layer 115 can be formed with high coverage over the entire filling layer 127.

[0098] As shown in FIG. 2B , the end of the insulating layer 125 preferably has a tapered shape in a cross-sectional view. The angle θ2 between the side surface of the insulating layer 125 and the surface on which the insulating layer 125 is to be formed (here, the LED layer 134) is preferably less than 90°, more preferably 60° or less, even more preferably 45° or less, and even more preferably 20° or less. By tapering the end of the insulating layer 125, the filling layer 127 provided on the insulating layer 125 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can also be formed with high coverage.

[0099] 3A and 3B, the end of the filling layer 127 may be located more inward than the end of the insulating layer 125. Also, as shown in Figures 4A and 4B, the end of the filling layer 127 may be aligned or approximately aligned with the end of the insulating layer 125.

[0100] As shown in Fig. 5A, the insulating layer 125 and the filling layer 127 may not have a region in contact with the upper surface of the LED layer 134. Alternatively, as shown in Fig. 5B, the heights of the upper surfaces of the insulating layer 125, the filling layer 127, and the LED layer 134 may be flush or approximately flush with one another. Alternatively, as shown in Fig. 6A, the filling layer 127 may have a region where the height of its upper surface is lower than the height of the upper surface of the LED layer 134. Fig. 6A shows an example in which the upper surface of the filling layer 127 has a recess.

[0101] 6B , the insulating layer 125 and the filling layer 127 do not necessarily need to cover the entire side surface of the LED layer 134. It is preferable that the insulating layer 125 cover at least the entire side surface of the light-emitting layer 184.

[0102] The upper surface of the filling layer 127 preferably has a smooth shape. For example, as shown in FIG. 7A , the upper surface of the filling layer 127 may have a concave curved shape in cross section. FIG. 7A illustrates an example in which the upper surface of the filling layer 127 has a shape that gently bulges toward the center, i.e., a convex curved surface, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface. Furthermore, the convex curved portion of the upper surface of the filling layer 127 is continuously connected to the tapered end portion. Even if the filling layer 127 has such a shape, the conductive layer 115 can be formed with high coverage over the entire filling layer 127. The upper surface of the filling layer 127 is not limited thereto. For example, as shown in FIG. 7B , the filling layer 127 may have a flat or approximately flat upper surface region. Having a flat or approximately flat upper surface region of the filling layer 127 can increase the bonding strength of the bonded surfaces, for example, when bonding to another substrate. Furthermore, poor bonding due to unevenness is suppressed, thereby improving productivity.

[0103] The display device 100 of one embodiment of the present invention may be a top-emission type that emits light in a direction opposite to a formation surface (here, the layer 101) of the light-emitting device 130, a bottom-emission type that emits light toward a formation surface of the light-emitting device 130, or a dual-emission type that emits light to both sides. As an example of a top-emission type (top-emission type), FIG. 1B and other figures schematically show light emitted from the substrate 120 side with a hollow arrow. When a top-emission type (top-emission type) is used, the substrate 120 is preferably made of a material that is highly transparent to visible light. It is preferable that one or both of the conductive layer 132 and the conductive layer 111 be made of a light-reflecting material, and the conductive layer 115 be made of a light-transmitting material.

[0104] Colored layers 107a, 107b, and 107c are provided between the light-emitting surface (here, the substrate 120) and the light-emitting device 130. The colored layers 107a, 107b, and 107c function as color filters that transmit, for example, red light, green light, or blue light, respectively. The colored layers 107a, 107b, and 107c may be made of a metal material, a resin material, or a resin material containing a pigment or dye. Note that the colored layers 107a, 107b, and 107c may be collectively referred to as the colored layers 107.

[0105] A color conversion layer 109 is provided between the colored layer 107a, the colored layer 107b, and the colored layer 107c and the light-emitting device 130. The color conversion layer 109 may be, for example, a resin layer mixed with a color conversion material. The color conversion material may be, for example, a phosphor or quantum dots (QDs). In particular, quantum dots (QDs) have a narrow peak width in their emission spectrum, making it possible to obtain light emission with high color purity. This can improve the display quality of the display device. Note that both phosphors and quantum dots (QDs) may be used as the color conversion material.

[0106] The material constituting the quantum dots (QDs) is not particularly limited, and examples thereof include a Group 14 element, a Group 15 element, a Group 16 element, a compound consisting of a plurality of Group 14 elements, a compound of an element belonging to Groups 4 to 14 and a Group 16 element, a compound of a Group 2 element and a Group 16 element, a compound of a Group 13 element and a Group 15 element, a compound of a Group 13 element and a Group 17 element, a compound of a Group 14 element and a Group 15 element, a compound of a Group 11 element and a Group 17 element, iron oxides, titanium oxides, chalcogenide spinels, and various semiconductor clusters.

[0107] Specific examples of materials constituting quantum dots (QDs) include cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, lead selenide, lead telluride, and Lead, indium selenide, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, arsenic selenide, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, bismuth sulfide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium, tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride, carbon sulfide Calcium, calcium selenide, calcium telluride, beryllium sulfide, beryllium selenide, beryllium telluride, magnesium sulfide, magnesium selenide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide, tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, nickel oxide, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, Examples of the quantum dots include tantalum oxide, titanium oxide, zirconium oxide, silicon nitride, germanium nitride, aluminum oxide, barium titanate, a compound of selenium, zinc, and cadmium, a compound of indium, arsenic, and phosphorus, a compound of cadmium, selenium, and sulfur, a compound of cadmium, selenium, and tellurium, a compound of indium, gallium, and arsenic, a compound of indium, gallium, and selenium, a compound of indium, selenium, and sulfur, a compound of copper, indium, and sulfur, and combinations thereof. Also, so-called alloy-type quantum dots, whose composition is expressed in any ratio, may be used.

[0108] The structure of quantum dots (QDs) can be a core type, a core-shell type, or a core-multishell type. In addition, quantum dots (QDs) have a high proportion of surface atoms, so they are highly reactive and prone to aggregation. Therefore, in order to prevent the aggregation of quantum dots (QDs) and improve their dispersibility in a dispersion medium, it is preferable that a protective agent is attached to the surface of the quantum dots or a protective group is provided. In addition, this can reduce reactivity and improve electrical stability.

[0109] Since the band gap of quantum dots (QDs) increases as their size decreases, their size can be adjusted appropriately to obtain light of the desired wavelength. As the crystal size decreases, the emission of quantum dots (QDs) shifts toward shorter wavelengths, i.e., toward higher energy. Therefore, by changing the size of the quantum dots, the emission wavelength can be adjusted across the ultraviolet, visible, and infrared wavelength regions. The size (diameter) of the quantum dots is, for example, 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the size distribution of the quantum dots, the narrower the emission spectrum, resulting in emission of light with good color purity. The shape of the quantum dots (QDs) is not particularly limited and may be spherical, rod-shaped, disc-shaped, or other shapes. Rod-shaped quantum rods have the function of emitting directional light.

[0110] The color conversion material contained in the color conversion layer 109 can be a material that emits light by being excited by light emitted from the light-emitting device 130. For example, by making the color of the light emitted by the color conversion material the complementary color of the color of the light emitted by the light-emitting device 130, it is possible to emit white light from the color conversion layer 109.

[0111] For example, by configuring the color conversion layer 109 to have a color conversion material that emits yellow light and the light-emitting device 130 to emit blue light, white light is emitted from the color conversion layer 109. Furthermore, in the sub-pixel 110a provided with the coloring layer 107a that transmits red light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107a, resulting in the emission of red light. Similarly, in the sub-pixel 110b provided with the coloring layer 107b that transmits green light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107b, resulting in the emission of green light. In the sub-pixel 110c provided with the coloring layer 107c that transmits blue light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107c, resulting in the emission of blue light.

[0112] A display device according to one embodiment of the present invention can display colors using one type of light-emitting device 130. Furthermore, since the light-emitting device 130 used in the display device is one type, the manufacturing process can be simplified. Therefore, according to one embodiment of the present invention, a display device can be provided that is manufactured at low cost, has high luminance, high contrast, a fast response speed, and low power consumption.

[0113] Note that there are no particular limitations on the combination of the color of light emitted from the color conversion material of color conversion layer 109 and the color of light emitted from light-emitting device 130. For example, white light may be emitted from color conversion layer 109 by configuring color conversion layer 109 to have a color conversion material that emits red light and light-emitting device 130 to emit blue-green light. Alternatively, white light may be emitted from color conversion layer 109 by configuring color conversion layer 109 to have a color conversion material that emits red light, a color conversion material that emits green light, and a color conversion material that emits blue light, and light-emitting device 130 to emit near-ultraviolet light or purple light.

[0114] It is preferable to have a protective layer 131 on the light-emitting device 130. Providing the protective layer 131 can improve the reliability of the light-emitting device 130. The protective layer 131 may have a single-layer structure or a laminated structure of two or more layers.

[0115] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0116] The protective layer 131 having an inorganic film can prevent the conductive layer 115 from being oxidized and prevent impurities (such as moisture and oxygen) from entering the light-emitting device 130. This can prevent deterioration of the light-emitting device 130 and improve the reliability of the display device.

[0117] For the protective layer 131, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used. Specific examples of these inorganic insulating films are as given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0118] The protective layer 131 may be formed using an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the conductive layer 115. The inorganic film may further contain nitrogen.

[0119] When light emitted from the light-emitting device 130 is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0120] The protective layer 131 may have a laminated structure of, for example, an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film. The use of such a laminated structure can prevent impurities (for example, water and oxygen) from diffusing toward the LED layer 134.

[0121] The protective layer 131 may further include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include the organic insulating materials that can be used for the filling layer 127.

[0122] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0123] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO ｘ The surface protection layer is preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0124] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, or semiconductor. A material that transmits light is used for the substrate on the side from which light from the light-emitting device 130 is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device and realize a flexible display. A polarizing plate may also be used as the substrate 120.

[0125] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofiber. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0126] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0127] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0128] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0129] When a film is used for the substrate 120, the film may absorb water, which may cause changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with low water absorption for the substrate 120. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0130] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0131] The following describes configuration examples that differ from the above-described <Configuration Example 1-1>. Note that descriptions of parts that overlap with <Configuration Example 1-1> may be omitted. Also, in the drawings shown below, parts that have the same functions as <Configuration Example 1-1> may be hatched with the same pattern and may not be assigned reference numerals.

[0132] <Structural Example 1-2> A cross-sectional view of a display device which is one embodiment of the present invention is shown in FIG. 8. For a top view, refer to FIG. 1A. Enlarged views of a part of the cross-sectional view shown in FIG. 8 are shown in FIGS. 9A and 9B.

[0133] The display device shown in FIG. 8 differs from the display device shown in Configuration Example 1-1 primarily in that it includes a reflective layer 121 between the insulating layer 125 and the filling layer 127. The reflective layer 121 preferably has an area overlapping the side surface of the LED layer 134. The reflective layer 121 functions to reflect light emitted from the LED layer 134. By providing the reflective layer 121, light emitted from the side surface of the LED layer 134 can be reflected toward the conductive layer 115 or the conductive layer 132. This can improve the brightness of the display device 100. Furthermore, by providing the reflective layer 121, light leaking to adjacent subpixels (also referred to as stray light) through the insulating layer 125 and the filling layer 127 can be suppressed. This can improve the display quality of the display device 100. FIG. 9A schematically illustrates light emitted from the LED layer 134 toward the adjacent subpixel with an arrow. As shown in FIG. 9A, light emitted from the LED layer 134 toward the adjacent subpixel is reflected by the reflective layer 121, thereby suppressing light leaking to the adjacent subpixel (also called stray light).

[0134] The reflective layer 121 is preferably formed of a material that has a high reflectivity for light emitted by the light-emitting device 130. The reflective layer 121 can be made of a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, molybdenum, tantalum, or tungsten, or an alloy containing one of these as a main component (e.g., an alloy of silver, palladium, and copper (APC: Ag-Pd-Cu)). The reflective layer 121 may also be a laminate of two or more of the above-mentioned materials.

[0135] When the reflective layer 121 is provided, it is preferable to provide an insulating layer 125 between the reflective layer 121 and the conductive layer 132, the connection layer 144, and the conductive layer 111. By covering the side surfaces of the conductive layer 132, the connection layer 144, and the conductive layer 111 with the insulating layer 125, it is possible to prevent the conductive layer 115 from contacting one or more of the conductive layer 132, the connection layer 144, and the conductive layer 111 via the reflective layer 121. Therefore, it is possible to prevent short circuits in the light-emitting device 130, and to improve the reliability of the light-emitting device 130.

[0136] When the reflective layer 121 is provided, a material with high light transmittance may be used for the filling layer 127, and the filling layer 127 may not have a light-blocking property. By providing the reflective layer 121, it is possible to suppress light (stray light) leaking to an adjacent subpixel. Note that the reflective layer 121 may be provided, and the filling layer 127 may have a light-blocking property.

[0137] 9B , the end of the reflective layer 121 preferably has a tapered shape in a cross-sectional view. The angle θ3 between the side surface of the reflective layer 121 and the surface on which it is to be formed (here, the insulating layer 125) is preferably less than 90°, more preferably 60° or less, even more preferably 45° or less, and even more preferably 20° or less. By forming the mask layer 118 in a tapered shape, the filling layer 127 provided on the reflective layer 121 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can also be formed with high coverage.

[0138] 10 is a cross-sectional view of a display device according to one embodiment of the present invention. For a top view, refer to FIG. 1A. Enlarged views of a part of the cross-sectional view shown in FIG. 10 are shown in FIGS. 11A and 11B.

[0139] The display device shown in FIG. 10 differs from the display device shown in <Configuration Example 1-1> mainly in that a mask layer 118 is provided between the insulating layer 125 and the LED layer 134. The mask layer 118 is provided on the LED layer 134. The mask layer 118 is a mask layer that is provided in contact with the upper surface of the LED layer 134 when the LED layer 134 is formed, and a portion of the mask layer remains. In the display device of one embodiment of the present invention, a portion of the mask layer used to protect the LED layer 134 during the fabrication may remain. Note that FIG. 10 illustrates an example in which the mask layer 118 is not provided on the conductive layer 123 in the connection portion 140.

[0140] In this specification and the like, the mask film and the mask layer are each located at least above the LED layer and have the function of protecting the LED layer during the manufacturing process. By providing the mask layer on the LED layer, damage to the LED layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0141] One end of the mask layer 118 is aligned or approximately aligned with an end of the LED layer 134, and the other end of the mask layer 118 is located on the LED layer 134. The mask layer 118 is located, for example, between the top surface of the island-shaped LED layer 134 and the insulating layer 125.

[0142] A portion of the upper surface of the LED layer 134 is covered with the mask layer 118. The insulating layer 125 and the filling layer 127 have a region that overlaps a portion of the upper surface of the LED layer 134 with the mask layer 118 interposed therebetween.

[0143] The insulating layer 125 and the mask layer 118 may be made of the same material. In this case, the boundary between the mask layer 118 and the insulating layer 125 may become unclear and indistinguishable. Therefore, the mask layer 118 and the insulating layer 125 may be observed as a single layer. In other words, one layer may be observed to be provided in contact with a portion of the top surface and the side surfaces of the LED layer 134, and the filler layer 127 may be observed to cover at least a portion of the side surfaces of the one layer.

[0144] 11A , a mask layer 118 is provided in contact with a portion of the upper surface of the LED layer 134. An insulating layer 125 is provided in contact with the upper and side surfaces of the mask layer 118, the side surfaces of the LED layer 134, the side surfaces of the conductive layer 132, the side surfaces of the connection layer 144, the side surfaces of the conductive layer 111, and the upper surface of the layer 101. A filling layer 127 is provided in contact with the upper surface of the insulating layer 125. The filling layer 127 may have a region in contact with the mask layer 118. The filling layer 127 may also have a region in contact with the LED layer 134. A conductive layer 115 is provided to cover the LED layer 134, the mask layer 118, the insulating layer 125, and the filling layer 127.

[0145] 11B , the end of the mask layer 118 preferably has a tapered shape in a cross-sectional view. The angle θ4 between the side surface of the mask layer 118 and the surface to be formed (here, the LED layer 134) is preferably less than 90°, more preferably 60° or less, even more preferably 45° or less, and even more preferably 20° or less. By tapering the mask layer 118, the filling layer 127 provided on the mask layer 118 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can also be formed with high coverage.

[0146] The end of the mask layer 118 is preferably located outside the end of the insulating layer 125. This reduces unevenness on the surface where the conductive layer 115 is to be formed, and improves the coverage of the conductive layer 115.

[0147] 12A , the connection portion 140 may have a conductive layer 123 and a connection layer 144 on the conductive layer 123. The conductive layer 123 is electrically connected to the conductive layer 115 via the conductive layer 123 and the connection layer 144. Also, as shown in FIG. 12B , the connection layer 144 may not be provided. A configuration may also be used in which the conductive layer 132 of the light-emitting device 130 is in direct contact with and electrically connected to the conductive layer 111.

[0148] 13A and 13B are cross-sectional views of a display device that is one embodiment of the present invention. For a top view, refer to FIG. 1A.

[0149] As shown in Fig. 13A, a lens 133 may be provided on the light-emitting device 130. Fig. 13A shows an example in which the lens 133 is provided on the light-emitting device 130 via a protective layer 131. By forming the lens 133 directly on the substrate on which the light-emitting device 130 is formed, the accuracy of alignment between the light-emitting device 130 and the lens 133 can be improved.

[0150] 13B , a lens 133 may be provided on a light-emitting device 130 via a protective layer 131 and a resin layer 122. The substrate 120 provided with the lens 133 can be bonded to the protective layer 131 via the resin layer 122. By providing the lens 133 on the substrate 120, the temperature of the heat treatment in the formation process can be increased.

[0151] The convex surface of the lens 133 may face the substrate 120 side or the light-emitting device 130 side.

[0152] The lens 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used. Alternatively, a material containing at least one of an oxide and a sulfide can be used. The lens 133 can be, for example, a microlens array. The lens 133 can be formed directly on the substrate or the light-emitting device, or a separately formed lens array can be attached thereto.

[0153] 14A is a cross-sectional view of a display device according to one embodiment of the present invention. For a top view, refer to FIG. 1A.

[0154] As shown in FIG. 14A , a light-shielding layer 135 may be provided. The light-shielding layer 135 is provided between adjacent colored layers 107. The light-shielding layer 135 has an opening in the region overlapping the light-emitting device 130. By providing the light-shielding layer 135, light emitted from the adjacent light-emitting device 130 is blocked, thereby suppressing color mixing. Here, by providing the end of the colored layer 107 so as to overlap with the light-shielding layer 135, light leakage can be suppressed. The light-shielding layer 135 can be made of a material with low transmittance, such as a metal material or a resin material containing a pigment or dye.

[0155] As shown in Fig. 14B, a configuration may be adopted in which adjacent colored layers 107 partially overlap each other. The overlapping areas of the colored layers 107 function as light-shielding layers. Note that Fig. 14B shows an example in which the colored layers 107a, 107b, and 107c are formed in this order on the substrate 120, but the order in which the colored layers 107 are formed is not particularly limited.

[0156] 15A is a cross-sectional view of a display device according to one embodiment of the present invention. For a top view, refer to FIG. 1A.

[0157] As shown in Fig. 15A, a subpixel may be provided that does not have a color conversion layer 109. A subpixel that emits light of a color in the shortest wavelength range may be configured not to have a color conversion layer 109. Subpixel 110c shown in Fig. 15A does not have a color conversion layer 109, and light emitted from light-emitting device 130 passes through colored layer 107c and is emitted to the outside of the display device.

[0158] For example, in a configuration in which red light is emitted from the sub-pixel 110a, green light is emitted from the sub-pixel 110b, and blue light is emitted from the sub-pixel 110c, the color conversion layer 109 does not need to be provided in the sub-pixel 110c. Alternatively, the color conversion layers 109 provided in the sub-pixels 110a and 110b may be configured to contain a color conversion material that emits yellow light. In the sub-pixel 110a provided with the colored layer 107a that transmits red light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107a, thereby resulting in the emission of red light. Similarly, in the sub-pixel 110b provided with the colored layer 107b that transmits green light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107b, thereby resulting in the emission of green light. In the sub-pixel 110c provided with the colored layer 107c that transmits blue light, the light emitted from the light-emitting device 130 passes through the colored layer 107c, and blue light is emitted.

[0159] It is preferable to provide a light-shielding layer 135 between adjacent colored layers 107. By providing the light-shielding layer 135, light emitted from the adjacent light-emitting device 130 is blocked, and color mixing can be suppressed.

[0160] As shown in FIG. 15B, the subpixel 110c may be configured without the color conversion layer and the coloring layer.

[0161] <Configuration Example 1-7> Fig. 16A shows a top view of a display device 100 different from Fig. 1A. Fig. 16B shows a cross-sectional view taken along dashed dotted line X3-X4 in Fig. 16A. Fig. 1B can be referred to for a cross-sectional view taken along dashed dotted line Y1-Y2.

[0162] 16A and 16B, the pixel 110 is composed of four types of subpixels: a subpixel 110a, a subpixel 110b, a subpixel 110c, and a subpixel 110d. The subpixel 110d may be configured without the colored layer 107.

[0163] For example, by configuring the color conversion layer 109 to have a color conversion material that emits yellow light and the light-emitting device 130 to emit blue light, white light is emitted from the color conversion layer 109. Furthermore, in the sub-pixel 110a provided with the coloring layer 107a that transmits red light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107a, resulting in the emission of red light. Similarly, in the sub-pixel 110b provided with the coloring layer 107b that transmits green light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107b, resulting in the emission of green light. In the sub-pixel 110c provided with the coloring layer 107c that transmits blue light, light emitted from the light-emitting device 130 passes through the color conversion layer 109 and the coloring layer 107c, resulting in the emission of blue light. In the sub-pixel 110d where no colored layer is provided, the light emitted from the light-emitting device 130 passes through the color conversion layer 109, and white light is emitted.

[0164] By configuring the subpixel 110d to emit white light, one color can be expressed by four subpixels of red (R), green (G), blue (B), and white (W). This allows less current to flow through the light-emitting device 130 than in a configuration in which one color is expressed by three subpixels of red (R), green (G), and blue (B), resulting in a display device with low power consumption.

[0165] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0166] A manufacturing method of a display device according to one embodiment of the present invention will be described.

[0167] <Manufacturing Method Example 1> Here, a manufacturing method of the display device shown in Fig. 12A will be described with reference to Fig. 17A to Fig. 23C. Fig. 17B to Fig. 17D and Fig. 20A to Fig. 23C show cross-sectional views taken along dashed dotted lines X1-X2 and Y1-Y2 in Fig. 12A side by side. Note that Fig. 17A to Fig. 23C omit the transistor 105 shown in Fig. 12A.

[0168] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting display devices can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0169] The thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0170] When processing the thin film that constitutes the display device, a photolithography method can be used. The thin film may also be processed by a nanoimprint method, a sandblasting method, or a lift-off method. Alternatively, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0171] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0172] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0173] For etching the thin film, for example, dry etching, wet etching, or sandblasting can be used.

[0174] First, the formation of the LED substrate 188 shown in Figures 17A and 18A will be described. Figure 17A shows a cross-sectional view of the LED substrate 188, and Figure 18A shows a perspective view of the LED substrate 188. The LED substrate 188 has an LED film 134f that becomes the LED layer 134 and a conductive film 132f that becomes the conductive layer 132.

[0175] A semiconductor film 182f that will become the semiconductor layer 182, a light-emitting film 184f that will become the light-emitting layer 184, and a semiconductor film 186f that will become the semiconductor layer 186 are formed on the substrate 180. The semiconductor film 182f, the light-emitting film 184f, and the semiconductor film 186f can each be formed using, for example, epitaxial growth. Epitaxial growth includes solid phase epitaxy (SPE), liquid phase epitaxy (LPE), and vapor phase epitaxy (VPE). When the vapor phase epitaxy (VPE) method is used, the semiconductor film 182f, the light-emitting film 184f, and the semiconductor film 186f can be formed using, for example, MOCVD.

[0176] The substrate 180 can be a single-crystal substrate of sapphire, silicon carbide, silicon, or a compound semiconductor. The compound semiconductor can be a compound containing the aforementioned Group 13 and Group 15 elements. When epitaxially growing the LED film 134f, the substrate 180 is preferably made of a material whose lattice constant is the same as or slightly different from that of the film constituting the LED film 134f. A layer (also referred to as a buffer layer) that relieves lattice distortion between the substrate 180 and the LED film 134f may be provided between the substrate 180 and the LED film 134f. While FIG. 18A shows the substrate 180 as a circle, the shape of the substrate 180 is not particularly limited.

[0177] For example, when forming a light emitting device 130 that emits blue light, the LED film 134f may be made of gallium nitride (GaN), and the substrate 180 may be made of, for example, a sapphire substrate.

[0178] For example, when forming the light-emitting device 130 that emits red light, the LED film 134f can be made of aluminum gallium arsenide (AlGaAs), and the substrate 180 can be made of, for example, a gallium arsenide (GaAs) substrate.

[0179] Next, a conductive film 132f is formed over the semiconductor film 186f. The conductive film 132f can be formed by, for example, a sputtering method or a vacuum evaporation method. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be stacked.

[0180] Next, a method for forming the light-emitting device 130 and the like on the layer 101 having the transistor will be described.

[0181] A conductive film 111f to be the conductive layer 111 is formed over the layer 101 including the transistor (FIG. 17B). The conductive film 111f can be formed by, for example, sputtering or vacuum evaporation. Note that in FIG. 17B and subsequent figures, the transistor included in the layer 101 is omitted.

[0182] Subsequently, a connection layer 144 is formed on the conductive film 111f (FIG. 17C).

[0183] Next, the LED substrate 188 described above is bonded onto the connection layer 144 ( FIG. 17D ). The bonding is performed so that the connection layer 144 and the conductive film 132f are in contact with each other. By bonding the LED substrate 188 to the layer 101 with the LED film 134f and the conductive film 132f provided on the entire surface of the LED substrate 188, high precision is not required for aligning the LED substrate 188 with the layer 101, thereby improving productivity. This also eliminates the need to form alignment markers.

[0184] Although the structure in which the conductive film 132f and the conductive film 111f are electrically connected to each other via the connection layer 144 has been described here, one embodiment of the present invention is not limited to this. The conductive film 132f and the conductive film 111f may be directly bonded to each other. For example, it is preferable to use copper for the conductive film 132f and the conductive film 111f. This allows the application of Cu-Cu direct bonding technology (technology for achieving electrical conduction by connecting copper to each other).

[0185] 18B and 18C , by making the LED substrate 188 and the layer 101 the same in shape and size, it is possible to easily bond the LED substrate 188 to the layer 101. Furthermore, after the LED substrate 188 is fabricated, the LED substrate 188 may be cut into pieces, and the cut pieces of the LED substrate 188 may be bonded together.

[0186] In Figure 18B, the region on the connection layer 144 that will become the display device is indicated by a dashed line. As shown in Figure 18B, multiple display devices can be provided on one layer 101. Furthermore, multiple light-emitting devices provided in these display devices can be formed by bonding one LED substrate 188 together, which increases the productivity of the display device. Note that the number, shape, and position of the display devices provided on the layer 101 are not limited to the region shown in Figure 18B.

[0187] The LED substrate 188 and the layer 101 may have different shapes and sizes. FIGS. 19A and 19B show an example in which the LED substrate 188 is circular, the layer 101 is rectangular, and the layer 101 is larger than the LED substrate 188. Even when the LED substrate 188 and the layer 101 have different shapes and sizes, by using an LED substrate 188 that is large enough to encompass the area of ​​one display device, high precision is not required for aligning the LED substrate 188 and the layer 101, and productivity can be improved. Note that FIGS. 19A and 19B show an example in which a light-emitting device provided in one display device is formed using one LED substrate 188, but one embodiment of the present invention is not limited to this. Light-emitting devices provided in multiple display devices may be formed using one LED substrate 188.

[0188] Next, the substrate 180 is peeled off to expose the LED film 134f (FIG. 20B). There is no limitation on the method for peeling off the substrate 180, and for example, a laser lift-off (LLO) method can be used. In FIG. 20A, arrows are used to schematically indicate the laser irradiating the substrate 180.

[0189] Alternatively, a release layer may be provided between the substrate 180 and the LED film 134f, and the release layer may be used to release the substrate 180 from the LED film 134f. For example, the release layer may be made of a material that can be removed by wet etching. For example, the release layer may be made of aluminum arsenide (AlAs).

[0190] Next, a mask film 118f that will become the mask layer 118 is formed on the LED film 134f (FIG. 20C). Note that although an example in which the mask film 118f is a single layer is shown here, it may have a laminated structure of two or more layers.

[0191] By providing the mask film 118f on the LED film 134f, damage to the LED film 134f during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device 130 can be improved.

[0192] For the mask film 118f, it is preferable to use a film that is highly resistant to the processing conditions of the LED film 134f, specifically, a film that has a large etching selectivity with respect to the LED film 134f.

[0193] The mask film 118f is preferably a film that can be removed by wet etching, which can reduce damage to the LED film 134f during processing of the mask film 118f compared to when dry etching is used.

[0194] The mask film 118f can be formed by, for example, sputtering, ALD, CVD, or vacuum deposition. Examples of ALD methods that can be used include thermal ALD and PEALD. The mask film 118f can be preferably formed by ALD. By using the ALD method, damage to the LED film 134f during the formation of the mask film 118f can be reduced. Alternatively, the mask film 118f may be formed by a wet film formation method.

[0195] The mask film 118f may be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0196] The mask film 118f can be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for the mask film 118f is preferable because it can prevent ultraviolet light from reaching the LED film 134f during the manufacturing process and thus prevent deterioration of the LED film 134f.

[0197] The mask film 118f can be made of a metal oxide such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or indium tin oxide containing silicon.

[0198] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0199] The mask film 118f may be a film containing a material that blocks light, particularly ultraviolet light. For example, a film that is reflective to ultraviolet light or a film that absorbs ultraviolet light may be used. Various materials that block ultraviolet light, such as metals, insulators, semiconductors, and semimetals, may be used. However, since part or all of the mask film will be removed in a later step, it is preferable that the mask film be a film that can be processed by etching, and particularly that the processability is good.

[0200] For example, semiconductor materials such as silicon or germanium can be used as materials that are highly compatible with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or compounds thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0201] By using a film containing a material that blocks ultraviolet light as the mask film 118f, it is possible to prevent ultraviolet light from being incident on the LED film 134f during an exposure process, etc. By preventing the LED film 134f from being damaged by ultraviolet light, it is possible to improve the reliability of the light-emitting device.

[0202] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the insulating film 125f described later.

[0203] The mask film 118f can be made of an inorganic insulating film that can be used for the protective layer 131. In particular, an oxide insulating film is preferable because it has higher adhesion to the LED film 134f than a nitride insulating film. For example, aluminum oxide, hafnium oxide, or silicon oxide can be suitably used for the mask film 118f. The mask film 118f can be made of an aluminum oxide film formed using, for example, the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (particularly the LED film 134f).

[0204] The same inorganic insulating film can be used for both the mask film 118f and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the mask film 118f and the insulating layer 125. The mask film 118f and the insulating layer 125 may be formed under the same or different film formation conditions. For example, by forming the mask film 118f under the same conditions as the insulating layer 125, the mask film 118f can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118f is a layer that will be mostly or completely removed in a later process, it is preferable that it be easily processed. Therefore, it is preferable that the mask film 118f be formed under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0205] An organic material may be used for the mask film 118f. For example, the organic material may be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of the LED film 134f. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol using a wet film formation method, and then perform a heat treatment to evaporate the solvent. Performing the heat treatment under a reduced pressure atmosphere allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to the LED film 134f, which is preferable.

[0206] The mask film 118f may be made of a resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as perfluoropolymer.

[0207] As described in Embodiment 1, in the display device of one embodiment of the present invention, part of the mask film 118f may remain as the mask layer 118 in some cases.

[0208] Next, a resist mask 190A is formed on the mask film 118f (FIG. 20D). The resist mask 190A is formed in the region where the LED layer 134 is to be provided. The resist mask 190A can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development. The resist mask 190A may be made using either a positive resist material or a negative resist material.

[0209] Next, using the resist mask 190A as a mask, a portion of the mask film 118f is removed to form a mask layer 118A ( FIG. 21A ). The mask layer 118A is formed in the region where the LED layer 134 is to be provided, and functions as a hard mask when the LED layer 134 is formed. Thereafter, the resist mask 190A is removed.

[0210] The mask film 118f can be processed by wet etching or dry etching, and anisotropic etching can be suitably used for processing the mask film 118f.

[0211] By using the wet etching method to process the mask film 118f, damage to the LED film 134f during processing of the mask film 118f can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0212] When dry etching is used to process the mask film 118f, deterioration of the LED film 134f can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a noble gas (also called a rare gas) such as He as the etching gas.

[0213] For example, when an aluminum oxide film formed by the ALD method is used as the mask film 118f, CHF ３ and He or CHF ３ and He and CH ４ The mask film 118f can be processed by dry etching using a diluted phosphoric acid solution. When an In—Ga—Zn oxide film formed by sputtering is used as the mask film 118f, the mask film 118f can be processed by wet etching using a diluted phosphoric acid solution. ４ The mask film 118f may be processed by dry etching using diluted phosphoric acid and Ar. Alternatively, the mask film 118f may be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 118f, SF ６ , C.F. ４ and O ２ , or CF ４ and Cl ２ and O ２ The mask film 118f can be processed by dry etching using the above.

[0214] The resist mask 190A can be removed by, for example, ashing using oxygen plasma. Alternatively, ashing using oxygen gas and CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２O, BCl ３ Alternatively, a noble gas such as He may be used. Alternatively, the resist mask 190A may be removed by wet etching. At this time, the LED film 134f is not exposed in the region where the mask layer 118A is formed, so that damage to the LED film 134f can be suppressed in the process of removing the resist mask 190A. This also broadens the range of options for removing the resist mask 190A. Alternatively, the resist mask 190A may be left without being removed.

[0215] Subsequently, using the mask layer 118A as a mask, a portion of the LED film 134f is removed to form the LED layer 134 and expose the conductive film 132f (FIG. 21B).

[0216] The LED film 134f can be processed by one or both of wet etching and dry etching. Anisotropic etching can be suitably used to process the LED film 134f. By using anisotropic etching, the distance between adjacent LED layers 134 can be reduced. The angle between the top surface of the layer 101 and the side surface of the LED layer 134 is preferably perpendicular or approximately perpendicular. The angle between the top surface of the layer 101 and the side surface of the LED layer 134 is preferably 60° to 90°, more preferably 70° to 90°, and even more preferably 80° to 90°. By making the angle between the top surface of the layer 101 and the side surface of the LED layer 134 perpendicular or approximately perpendicular, the aperture ratio of the pixel can be increased.

[0217] Next, a resist mask 190B is formed over the conductive film 132f (FIG. 21C). The resist mask 190B is formed in a region where the conductive layer 123 is to be provided. The formation of the resist mask 190B can be referred to in the description of the formation of the resist mask 190A, and therefore detailed description thereof will be omitted.

[0218] Next, using the mask layer 118A and the resist mask 190B as masks, the conductive film 132f, the connection layer 144, and the conductive film 111f are partially removed to form the conductive layer 132, the connection layer 144, the conductive layer 111, and the conductive layer 123. Then, the resist mask 190B is removed (FIG. 21D). The resist mask 190B can be removed by wet etching or dry etching, or both.

[0219] As a result, a layered structure of the connection layer 144, the conductive layer 132, the LED layer 134, and the mask layer 118A is formed on the conductive layer 111. Also, a layered structure of the connection layer 144 and the conductive layer 132 is formed on the conductive layer 123. Note that the mask layer 118A may be removed.

[0220] It is preferable that the edges of the LED layer 134, the conductive layer 132, the connection layer 144, and the conductive layer 111 are aligned or approximately aligned. It is preferable that at least the edges of the LED layer 134 and the conductive layer 132 are aligned or approximately aligned. FIG. 21D illustrates an example in which the edges of the LED layer 134, the conductive layer 132, the connection layer 144, and the conductive layer 111 are aligned with the edges of the mask layer 118A. This configuration can increase the aperture ratio of the pixel. Note that one or more edges of the LED layer 134, the conductive layer 132, the connection layer 144, and the conductive layer 111 may be located outside or inside the edges of the mask layer 118A. Although not shown, the etching process may form a recess in a region of the layer 101 that does not overlap with the conductive layer 111 or the conductive layer 123.

[0221] The side surface of the LED layer 134 is preferably perpendicular or approximately perpendicular to the upper surface of the layer 101. For example, the angle formed between the upper surface of the layer 101 and the side surface of the LED layer 134 is preferably 60° or more and 90° or less.

[0222] As described above, the distance between two adjacent LED layers 134 formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, by the distance between the opposing ends of two adjacent LED layers 134. By narrowing the distance between the island-shaped LED layers 134 in this way, a display device with high definition and a high aperture ratio can be obtained.

[0223] Subsequently, an insulating film 125f that will become the insulating layer 125 is formed so as to cover the conductive layer 111, the connection layer 144, the conductive layer 132, the LED layer 134, and the mask layer 118A (FIG. 22A).

[0224] Subsequently, a filling film 127f that will become the filling layer 127 is formed on the insulating film 125f (FIG. 22B).

[0225] The insulating film 125f and the filling film 127f are preferably formed by a formation method that causes less damage to the LED layer 134. In particular, since the insulating film 125f is formed in contact with the side surface of the LED layer 134, it is preferably formed by a formation method that causes less damage to the LED layer 134 than the filling film 127f.

[0226] The insulating film 125f and the filling film 127f are formed at a temperature lower than the heat resistance temperatures of the elements constituting the layer 101, the conductive layer 111, the connection layer 144, the conductive layer 132, and the LED layer 134. Because the LED layer 134, which uses an inorganic material, has a high heat resistance temperature, the insulating film 125f and the filling film 127f may be formed at a temperature lower than the heat resistance temperatures of the elements constituting the layer 101, the conductive layer 111, the connection layer 144, and the conductive layer 132. Furthermore, by increasing the substrate temperature during film formation, the insulating film 125f can be formed into a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even if it is thin.

[0227] It is preferable that the substrate temperature when forming the insulating film 125f and the filling film 127f is 60°C or higher, 100°C or higher, 200°C or higher, 250°C or higher, or 300°C or higher, and 600°C or lower, 550°C or lower, 500°C or lower, or 450°C or lower.

[0228] The insulating film 125f is preferably formed to a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0229] The insulating film 125f is preferably formed by, for example, an ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. The insulating film 125f is preferably formed by, for example, forming an aluminum oxide film by the ALD method.

[0230] Alternatively, the insulating film 125f may be formed by a sputtering method, a CVD method, or a PECVD method, which have a faster film formation rate than an ALD method. This enables a highly reliable display device to be manufactured with high productivity.

[0231] The filling film 127f is preferably formed by the wet film formation method described above. The filling film 127f is preferably formed by, for example, spin coating using a photosensitive resin, more specifically, a photosensitive acrylic resin.

[0232] After the formation of the filling film 127f, it is preferable to perform a heat treatment (also called pre-baking). The heat treatment may be performed at a temperature lower than the heat resistance temperature of the filling film 127f. The substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and even more preferably 70°C or higher and 120°C or lower. This allows the solvent contained in the filling film 127f to be removed.

[0233] Next, exposure is performed to expose a portion of filling film 127f to visible light or ultraviolet light. If a positive acrylic resin is used for filling film 127f, visible light or ultraviolet light is irradiated onto the region where filling layer 127 is not to be formed. Figure 22C shows the light used for exposure with arrows.

[0234] The width of the formed filling layer 127 can be controlled by the region to be exposed to light. In this embodiment, exposure is performed so that the filling layer 127 has a portion that overlaps with the upper surface of the LED layer 134. The filling layer 127 does not necessarily have to have a portion that overlaps with the upper surface of the LED layer 134.

[0235] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0236] Although an example has been shown in which a positive photosensitive resin is used for the filling film 127f and visible light or ultraviolet light is irradiated onto the region where the filling layer 127 is not to be formed, one aspect of the present invention is not limited to this. For example, a negative photosensitive resin may be used for the filling film 127f. In this case, visible light or ultraviolet light is irradiated onto the region where the filling layer 127 is to be formed.

[0237] Subsequently, development is performed to remove the exposed areas of the filler film 127f, forming the filler layer 127 ( FIG. 22D ). The filler layer 127 is formed in the area sandwiched between the two LED layers 134 and around the conductive layer 123. When an acrylic resin is used for the filler film 127f, it is preferable to use an alkaline solution as the developer, such as an aqueous solution of tetramethylammonium hydroxide (TMAH).

[0238] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0239] Here, etching may be performed to adjust the height of the surface of the filling layer 127. The filling layer 127 may be processed by ashing using oxygen plasma, for example. Also, even when a non-photosensitive material is used for the filling film 127f, the height of the surface of the filling layer 127 can be adjusted by ashing or the like.

[0240] Subsequently, the entire substrate may be exposed to visible light or ultraviolet light to irradiate the filler layer 127. The energy density of the exposure may be 0 mJ / cm. ２Larger than 800 mJ / cm ２ It is preferable that the dose is 0 mJ / cm or less. ２ Greater than 500 mJ / cm ２ It is more preferable to set the following. By performing such exposure after development, it may be possible to improve the transparency of the filling layer 127. Furthermore, it may be possible to lower the substrate temperature required for a heat treatment in a later step for transforming the filling layer 127 into a tapered shape.

[0241] On the other hand, as will be described later, not exposing the filling layer 127 to light may make it easier to change the shape of the filling layer 127 or to deform the filling layer 127 into a tapered shape in a later step. Therefore, it may be preferable not to expose the filling layer 127 to light after development.

[0242] For example, when a photocurable resin is used as the material of the filling layer 127, polymerization can be initiated by exposing the filling layer 127 to light, thereby hardening the filling layer 127. At this stage, the filling layer 127 may not be exposed to light, and at least one of a first etching process, a post-bake, and a second etching process, which will be described later, may be performed while the filling layer 127 remains in a state in which it is relatively susceptible to shape change. This can prevent unevenness from occurring on the surface on which the conductive layer 115 is formed, and can also prevent the conductive layer 115 from being broken into pieces. The filling layer 127 may be exposed to light after any of the first etching process, a post-bake, and a second etching process, which will be described later.

[0243] Next, an etching process is performed using the filling layer 127 as a mask to remove a portion of the insulating film 125f and the mask layer 118A, thereby forming the insulating layer 125 and the mask layer 118 (FIG. 23A). As a result, the upper surface of the LED layer 134 is exposed.

[0244] The etching process may be a dry etching process or a wet etching process. Note that it is preferable to use the same material for the insulating film 125f as for the mask layer 118A, because the insulating film 125f and the mask layer 118A can be etched simultaneously.

[0245] As shown in FIG. 23A, by performing etching using the filling layer 127 having tapered side surfaces as a mask, the side surfaces of the insulating layer 125 and the upper end of the side surfaces of the mask layer 118 can be tapered relatively easily.

[0246] When dry etching is used to form the insulating layer 125 and the mask layer 118, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl ４ , and CCl ４ The dry etching can be performed by mixing one or more of the following gases: oxygen gas, hydrogen gas, helium gas, and argon gas. The chlorine-based gas can be mixed with one or more of the following gases: oxygen gas, hydrogen gas, helium gas, and argon gas. By using dry etching, the thin film region of the mask layer 118 can be formed with good in-plane uniformity.

[0247] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. Examples of the dry etching apparatus having a high-density plasma source include an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel-plate electrodes may be used. The capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes. Alternatively, it may be configured to apply multiple different high-frequency voltages to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0248] When dry etching is performed, by-products generated by the dry etching may be deposited on the top surface and side surfaces of the filling layer 127. As a result, components contained in the etching gas, components contained in the insulating layer 125, components contained in the mask layer 118, etc. may be contained in the filling layer 127 of the display device after fabrication.

[0249] The insulating layer 125 and the mask layer 118 are preferably formed by wet etching. By using wet etching, damage to the LED layer 134 can be reduced compared to when dry etching is used. For example, wet etching can be performed using an alkaline solution. For example, an aqueous solution of tetramethylammonium hydroxide (TMAH), which is an alkaline solution, is preferably used for wet etching of an aluminum oxide film. In this case, wet etching can be performed using a puddle method. Note that using the same material as the mask layer 118A for the insulating film 125f is preferable because the insulating film 125f and the mask layer 118A can be etched simultaneously.

[0250] Next, a heat treatment (also referred to as post-baking) is performed. The heat treatment can deform the side surface of the filling layer 127 into a tapered shape ( FIG. 23B ). The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. A reduced-pressure atmosphere is preferable because it allows drying at a lower temperature. The heat treatment in this step is preferably performed at a higher substrate temperature than the heat treatment (pre-baking) performed after the formation of the filling film 127f. This can improve the adhesion between the filling layer 127 and the insulating layer 125 and also improve the corrosion resistance of the filling layer 127.

[0251] By performing a heat treatment after exposing a part of the LED layer 134, it is possible to remove water contained in the LED layer 134 and water adsorbed on the surface of the LED layer 134. By performing the heat treatment in a reduced pressure atmosphere, it is possible to remove water at a lower temperature.

[0252] As described above, by providing the filling layer 127, the insulating layer 125, and the mask layer 118, it is possible to suppress poor connection between the light-emitting devices 130 due to portions where the conductive layer 115 is separated, and to suppress an increase in electrical resistance due to portions where the conductive layer 115 is locally thin, thereby making it possible to provide a display device with high display quality.

[0253] Next, the conductive layer 115 and the protective layer 131 are formed in this order on the filling layer 127 and the LED layer 134 (FIG. 23C).

[0254] The conductive layer 115 can be formed by, for example, a sputtering method or a vacuum evaporation method. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be stacked.

[0255] The protective layer 131 can be formed by, for example, vacuum deposition, sputtering, CVD, or ALD.

[0256] Subsequently, the substrate 120 provided with the colored layer 107 and the color conversion layer 109 is attached onto the protective layer 131 using the resin layer 122, thereby completing the display device (FIG. 12A).

[0257] For example, lithography can be used to form the colored layer 107. The colored layer 107 can be formed by processing a photosensitive resin using lithography.

[0258] The color conversion layer 109 can be formed by a droplet discharge method (e.g., an inkjet method), a coating method, an imprint method, or a printing method (e.g., screen printing or offset printing). A color conversion film (e.g., a quantum dot film) may also be used for the color conversion layer 109.

[0259] The color conversion layer 109 may be formed by lithography. For example, a method can be used in which a resist mask is formed on a film that will become the color conversion layer 109, the film is processed by etching or the like, and the resist mask is then removed. Alternatively, the color conversion layer 109 may be formed in a desired shape by forming a photosensitive film, and then performing exposure and development. For example, an island-shaped color conversion layer 109 can be formed by forming a film using a photosensitive material mixed with a color conversion material, and processing the film using lithography.

[0260] As described above, in the method for manufacturing a display device according to the present embodiment, a film that becomes the LED layer 134 is formed on one surface of the display region and then processed into island-shaped LED layers 134, thereby realizing a high-definition display device or a display device with a high aperture ratio. Furthermore, even if the definition or aperture ratio is high and the distance between subpixels is extremely short, it is possible to prevent the LED layers 134 from contacting each other in adjacent subpixels. Therefore, it is possible to prevent leakage current from occurring between subpixels. This makes it possible to prevent crosstalk caused by unintended light emission, and to realize a display device with extremely high contrast.

[0261] By providing the filling layer 127 having a tapered end between adjacent island-shaped LED layers 134, it is possible to suppress the occurrence of step discontinuities during the formation of the conductive layer 115 and to prevent the formation of locally thin portions in the conductive layer 115. This makes it possible to suppress the occurrence of connection defects due to the disconnected portions in the conductive layer 115 and an increase in electrical resistance due to locally thin portions in the conductive layer 115. Therefore, the display device of one embodiment of the present invention can achieve both high resolution and high display quality.

[0262] This embodiment mode can be combined with other embodiment modes as appropriate.

[0263] (Embodiment 2) An example of a display device having a different configuration from that of the display device described in the previous embodiment will be described with reference to Figures 24 to 30. In the following, descriptions of parts that overlap with the previous embodiment may be omitted. In addition, in the drawings shown below, parts having the same functions as those in the previous embodiment may be indicated with the same hatching patterns and may not be assigned reference numerals.

[0264] 24A is a cross-sectional view of a display device according to one embodiment of the present invention. FIG. 1A can be referred to for a top view. FIG. 24B is an enlarged view of a part of the cross-sectional view shown in FIG. 24A.

[0265] The display device shown in FIG. 24A and other figures differs from the display device shown in Embodiment 1 mainly in that a light-emitting diode (hereinafter also referred to as an LED chip) having a pair of electrodes is provided between conductive layer 111 and conductive layer 115. LED chip 136 provided between conductive layer 111 and conductive layer 115 includes conductive layer 132, LED layer 134 on conductive layer 132, conductive layer 137 on LED layer 134, connection layer 138, and substrate 139. Conductive layer 132 and conductive layer 137 each function as electrodes of LED chip 136. LED layer 134 is sandwiched between the pair of electrodes (conductive layer 132 and conductive layer 137). LED chip 136 can be considered a so-called vertically structured light-emitting diode, having conductive layer 132 on one side of LED layer 134 and conductive layer 137 on the opposite side.

[0266] The connection layer 138 and the substrate 139 may each be made of a conductive material. The conductive layer 132 is electrically connected to the substrate 139 via the connection layer 138. The connection layer 138 may be made of a material that can be used for the connection layer 144. The substrate 139 may be, for example, a conductive silicon substrate, a silicon carbide (SiC) substrate, a gallium arsenide (GaAs) substrate, a metal substrate, or an alloy substrate. Examples of metal substrates include substrates containing one or more of tungsten, copper, gold, nickel, and titanium. Examples of alloy substrates include Si-Al alloy substrates. The substrate 139 is electrically connected to the conductive layer 111 via the connection layer 144. The conductive layer 132, the connection layer 138, the substrate 139, the connection layer 144, and the conductive layer 111 may collectively function as a pixel electrode. Note that the connection layer 144 may not be provided, and the conductive layer 111 and the substrate 139 may be directly in contact with each other and electrically connected.

[0267] The conductive layer 115 is provided on the conductive layer 137. Note that Figures 24A and 24B show an example in which the end of the conductive layer 137 is located inside the end of the LED layer 134. The conductive layer 111 has an area in contact with the upper surface and side surfaces of the conductive layer 137 and the upper surface of the LED layer 134. The insulating layer 125 has an area in contact with part of the upper surface and side surfaces of the conductive layer 137 and part of the upper surface and side surfaces of the LED layer 134. The insulating layer 125 covers the end of the conductive layer 137 and the end of the LED layer 134, and the filling layer 127 is provided on the insulating layer 125. The conductive layer 115 is provided on the LED chip 136 and the filling layer 127.

[0268] By providing the insulating layer 125 and the filling layer 127, it is possible to reduce the step that occurs between the area where the LED chip 136 is provided and the area where the LED chip 136 is not provided. Therefore, the unevenness of the surface on which the conductive layer 115, which functions as a common electrode, is formed is reduced, and the coverage of the conductive layer 115 can be improved. Therefore, it is possible to suppress connection defects due to step disconnections in the conductive layer 115. In addition, it is possible to suppress an increase in electrical resistance caused by localized thinning of the conductive layer 115 due to step differences.

[0269] The insulating layer 125 may not cover the end portions of the conductive layer 137. It is preferable that the insulating layer 125 cover at least the side surfaces of the LED layer .

[0270] When a material with low light transmittance is used for at least one of the conductive layer 132 and the substrate 139, the LED chip 136 emits light toward the conductive layer 137. In other words, the display devices shown in FIGS. 24A and 24B can be top-emission devices. The conductive layer 115 is preferably made of a material with high light transmittance. FIG. 24A shows an example of a top-emission device, with the white arrows schematically indicating light emitted from the substrate 120. Note that when a material with low light transmittance is used for the conductive layer 137, the region where the conductive layer 137 is provided contributes less to light emission. Therefore, it is preferable that the area of ​​the region where the conductive layer 137 is provided be small. Note that while FIG. 24A and other figures show one conductive layer 137, the number, shape, and size of the conductive layers 137 are not particularly limited.

[0271] 25A is a cross-sectional view of a display device that is one embodiment of the present invention. FIG. 1A can be referred to for a top view. FIG. 25B is an enlarged view of a part of the cross-sectional view shown in FIG. 25A.

[0272] The display device shown in Figures 25A and 25B differs from the display device shown in <Configuration Example 2-1> mainly in that the conductive layer 137 of the LED chip 136 is provided on the connection layer 144, and the conductive layer 115 is provided on the substrate 139.

[0273] A substrate 120a is bonded via an adhesive layer 122a to the surface of the layer 101 opposite the surface on which the LED chip 136 is provided. The conductive layer 115, the substrate 120, and the adhesive layer 122a are preferably made of materials with high light transparency. A coloring layer 107 and a color conversion layer 109 are provided on the substrate 120a. Light emitted from the LED chip 136 passes through the layer 101, the adhesive layer 122a, the color conversion layer 109, the coloring layer 107, and the substrate 120a. The display devices shown in Figures 25A and 25B can be bottom-emission type. Figure 25A shows an example of a bottom-emission type, with light emitted from the substrate 120a indicated by a white arrow.

[0274] The layer 101 is preferably provided with a light-shielding layer 117. By providing the light-shielding layer 117 between the substrate 120a and the transistor 105 and blocking light from reaching the transistor 105 from outside the display device, deterioration of the transistor 105 due to light can be suppressed, and a highly reliable display device can be obtained.

[0275] <Manufacturing Method Example 2> A manufacturing method of the display device shown in FIG. 24A will be described.

[0276] First, the formation of the LED chip 136 will be described with reference to Figures 26A to 27C. Figures 26A to 27C each show a cross-sectional view relating to the formation of the LED chip 136.

[0277] The LED film 134f is formed on the substrate 180. For the formation of the LED film 134f, the description relating to Fig. 17A can be referred to, and therefore a detailed description thereof will be omitted.

[0278] Subsequently, a resist mask 190A is formed on the LED film 134f (FIG. 26A).

[0279] Next, using the resist mask 190A as a mask, a portion of the LED film 134f is removed to form an island-shaped LED layer 134. The resist mask 190A is removed, and the conductive layer 132 is formed on the LED layer 134 (FIG. 26B).

[0280] Next, a substrate 139 on which a connection layer 138 is formed is attached onto the conductive layer 132 (FIG. 26C).

[0281] Next, the substrate 180 is peeled off to expose the LED layer 134 ( FIG. 27A ). There is no limitation on the method for peeling off the substrate 180, and for example, a laser lift-off (LLO) method can be used. In FIG. 26D , arrows are used to schematically indicate the laser irradiating the substrate 180.

[0282] Subsequently, a conductive layer 137 is formed on the LED layer 134 (FIG. 27B).

[0283] Next, the connection layer 138 and the substrate 139 are cut to separate the LED chips 136 ( FIG. 27C ). There is no limitation on the method for cutting the connection layer 138 and the substrate 139, and for example, dicing or scribing can be used. Note that although FIG. 27C and other figures show four LED chips 136 formed from one substrate 180, the number of LED chips 136 formed on one substrate 180 is not particularly limited.

[0284] The area of ​​the light-emitting region of the LED chip 136 is 1 mm ２ Preferably, 10,000 μm or less ２ More preferably, 3000 μm or less ２ More preferably, 700 μm or less ２ More preferably, the area of ​​the region is 1 μm or less. ２ More than 10 μm is preferable. ２ More preferably, 100 μm or more ２ In this specification, the area of ​​the light-emitting region is 10,000 μm ２ The following light-emitting diodes may be referred to as micro-LEDs.

[0285] Note that an LED chip that can be used in the display device of one embodiment of the present invention is not limited to the above-described micro LED. ２ Larger LED chips (also called mini LEDs) may also be used.

[0286] Next, a method for manufacturing a display device having the LED chip 136 will be described with reference to Fig. 28A to Fig. 30B. Fig. 28A to Fig. 30B show a cross-sectional view taken along dashed dotted line X1-X2 in Fig. 24A and a cross-sectional view taken along dashed dotted line Y1-Y2 side by side. Note that Fig. 28A to Fig. 30B omit the transistor 105 shown in Fig. 24A.

[0287] A conductive layer 111 is formed on the layer 101. A connecting layer 116 is formed on the conductive layer 111 (FIG. 28A).

[0288] Next, the LED chip 136 is provided on the connection layer 116 ( FIG. 28B ). The LED chip 136 can be provided on the connection layer 116 using, for example, a pick-and-place method. Here, the LED chip 136 is placed on the connection layer 116 so that the substrate 139 is in contact with the surface of the connection layer 116.

[0289] Subsequently, an insulating film 125f that will become the insulating layer 125 is formed so as to cover the conductive layer 111, the connection layer 116, and the LED chip 136 (FIG. 28C).

[0290] Subsequently, a filling film 127f that will become the filling layer 127 is formed on the insulating film 125f (FIG. 28D).

[0291] Next, exposure is performed to expose a portion of the filling film 127f to visible light or ultraviolet light. In Fig. 29A, the arrows schematically indicate the light used for exposure.

[0292] Subsequently, development is performed to remove the exposed area of ​​the filler film 127f, thereby forming the filler layer 127 (FIG. 29B). The filler layer 127 is formed in the area sandwiched between the two LED chips 136 and around the conductive layer 123.

[0293] Next, an etching process is performed using the filling layer 127 as a mask to remove a portion of the insulating film 125f, thereby forming the insulating layer 125 (FIG. 29C), thereby exposing the upper surfaces of the conductive layer 137 and the LED layer 134.

[0294] Subsequently, a heat treatment (also called post-baking) is performed, which can deform the side surface of the filling layer 127 into a tapered shape (FIG. 30A).

[0295] Subsequently, the conductive layer 115 and the protective layer 131 are formed in this order on the filling layer 127, the conductive layer 137, and the LED layer 134 (FIG. 30B).

[0296] Subsequently, the substrate 120 provided with the colored layer 107 and the color conversion layer 109 is attached onto the protective layer 131 using the resin layer 122, thereby completing the display device (FIG. 24A).

[0297] This embodiment mode can be combined with other embodiment modes as appropriate.

[0298] Embodiment 3 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0299] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0300] The top shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top shape of the light-emitting region.

[0301] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0302] The circuit layout constituting the sub-pixel may be the same as or different from the pixel layout, and the circuit layout is not limited to the range of the sub-pixel shown in the figure, and may be arranged outside the range.

[0303] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 31A. The pixel 110 shown in Fig. 31A is composed of three sub-pixels: sub-pixels 110a, 110b, and 110c.

[0304] The pixel 110 shown in Figure 31B has a subpixel 110a having a generally trapezoidal top surface shape with rounded corners, a subpixel 110b having a generally triangular top surface shape with rounded corners, and a subpixel 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110a has a larger light-emitting area than the subpixel 110b. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0305] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 31C. Fig. 31C shows an example in which a pixel 124a having sub-pixels 110a and 110b and a pixel 124b having sub-pixels 110b and 110c are arranged alternately.

[0306] 31D to 31F are arranged in a delta configuration. Pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixels 110a and 110b) in the bottom row (second row).

[0307] Figure 31D is an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 31E is an example in which each sub-pixel has a circular top surface shape, and Figure 31F is an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0308] 31G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned.

[0309] 31A to 31G, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110b may be the subpixel R that emits red light, and the subpixel 110a may be the subpixel G that emits green light.

[0310] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0311] In order to form the top surface of the LED layer into a desired shape, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0312] As shown in Figures 32A to 32I, a pixel can be configured to have four types of sub-pixels.

[0313] The pixel 110 shown in FIGS. 32A to 32C is configured in a stripe arrangement.

[0314] Figure 32A is an example in which each subpixel has a rectangular top surface shape, Figure 32B is an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 32C is an example in which each subpixel has an elliptical top surface shape.

[0315] The pixels 110 shown in FIGS. 32D to 32F are arranged in a matrix.

[0316] Figure 32D is an example in which each subpixel has a square top surface shape, Figure 32E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 32F is an example in which each subpixel has a circular top surface shape.

[0317] 32G and 32H show an example in which one pixel 110 is configured in two rows and three columns.

[0318] 32G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixels 110d across these three columns.

[0319] The pixel 110 shown in FIG. 32H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 32H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0320] FIG. 32I shows an example in which one pixel 110 is configured in three rows and two columns.

[0321] 32I has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across the first and second rows, and one subpixel (subpixel 110d) in the bottom row (third row). In other words, pixel 110 has subpixels 110a and 110b in the left column (first column), subpixel 110c in the right column (second column), and subpixel 110d across these two columns.

[0322] The pixel 110 shown in FIGS. 32A to 32I is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d.

[0323] The sub-pixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits a different color light, such as sub-pixels of four colors R, G, B, and white (W), sub-pixels of four colors R, G, B, and Y, or sub-pixels of R, G, B, and infrared (IR).

[0324] 32A to 32I , it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be any of the subpixels W that emit white light, Y that emit yellow light, and near-infrared light. With this configuration, the pixel 110 shown in FIGS. 32G and 32H has a stripe layout of R, G, and B, thereby improving display quality. Furthermore, the pixel 110 shown in FIG. 32I has a so-called S-stripe layout of R, G, and B, thereby improving display quality.

[0325] As shown in Figures 32J and 32K, a pixel can be configured to have five types of sub-pixels.

[0326] FIG. 32J shows an example in which one pixel 110 is configured in two rows and three columns.

[0327] 32J has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and two subpixels (subpixels 110d and 110e) in the bottom row (second row). In other words, pixel 110 has subpixels 110a and 110d in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110e spanning from the second column to the third column.

[0328] FIG. 32K shows an example in which one pixel 110 is configured in three rows and two columns.

[0329] 32K has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across rows 1 and 2, and two subpixels (subpixels 110d and 110e) in the bottom row (third row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (first column), and subpixels 110c and 110e in the right column (second column).

[0330] 32J and 32K, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. With this configuration, the pixel 110 shown in FIG. 32J has a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 32K has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0331] This embodiment mode can be combined with other embodiment modes as appropriate.

[0332] Embodiment 4 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0333] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type AR device.

[0334] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0335] 33A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0336] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0337] 33B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0338] The pixel portion 284 has a plurality of pixels 284a arranged in a matrix. An enlarged view of one pixel 284a is shown on the right side of Fig. 33B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 33B shows an example in which the pixel 284a has a configuration similar to that of the pixel 110 shown in Fig. 1A.

[0339] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged in a matrix.

[0340] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0341] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0342] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0343] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0344] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small displays. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0345] <Display Device 100A> A display device 100A shown in FIG. 34 includes a substrate 301, a light-emitting device 130, a capacitor 240, and a transistor 310.

[0346] 33A and 33B. The stacked structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1.

[0347] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0348] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be buried in the substrate 301 .

[0349] An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0350] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0351] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0352] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. A light-emitting device 130 is provided on the insulating layer 255c. FIG. 34 shows an example in which the light-emitting device 130 has the stacked structure shown in FIG. 1B. An insulator is provided in the region between adjacent light-emitting devices 130. FIG. 34 shows a configuration in which an insulating layer 125 and a filling layer 127 on the insulating layer 125 are provided in this region.

[0353] One or more of the insulating layers 255a, 255b, and 255c may have a recess between adjacent light-emitting devices. Fig. 34 shows an example in which a recess is provided in the insulating layer 255c.

[0354] The insulating layers 255a, 255b, and 255c can each be preferably formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0355] The mask layer 118 is located on the LED layer 134 of the light emitting device 130 .

[0356] The conductive layer 111 is electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 243, 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug. Figure 34 and other figures show an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0357] A protective layer 131 is provided on the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 via a resin layer 122. For details of the components from the light-emitting device to the substrate 120, refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG. 33A .

[0358] 35 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, description of parts that are the same as those of the display device described above may be omitted.

[0359] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0360] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332.

[0361] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0362] A conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. The lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0363] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0364] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0365] It is preferable that the conductive layers 341 and 342 use the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable that copper be used for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0366] <Display Device 100C> A display device 100C shown in FIG. 36 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0367] 36 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0368] <Display Device 100D> A display device 100D shown in FIG. 37 differs from the display device 100A mainly in the configuration of the transistors.

[0369] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) exhibiting semiconductor characteristics is used for a semiconductor layer in which a channel is formed.

[0370] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0371] 33A and 33B. The stacked structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0372] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. For the insulating layer 332, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

[0373] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0374] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably contains an oxide semiconductor. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0375] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be formed using an insulating film similar to that of the insulating layer 332.

[0376] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0377] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0378] The insulating layers 264 and 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layers 328 and 332.

[0379] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0380] <Display Device 100E> A display device 100E illustrated in FIG. 38 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor in a semiconductor layer in which a channel is formed.

[0381] The description of the display device 100D can be referred to for the transistor 320A, the transistor 320B, and the peripheral configuration thereof.

[0382] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0383] <Display Device 100F> A display device 100F illustrated in FIG. 39 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and which includes an oxide semiconductor in a semiconductor layer.

[0384] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0385] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0386] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0387] <Display Device 100G> FIG. 40 shows a perspective view of the display device 100G, and FIG. 41A shows a cross-sectional view of the display device 100G.

[0388] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 40, the substrate 152 is indicated by a dashed line.

[0389] The display device 100G includes a display portion 162, a connection portion 140, a circuit 164, wiring 165, and the like. Fig. 40 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 40 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.

[0390] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or more connection portions 140. FIG. 40 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0391] The circuit 164 can be, for example, a scanning line driver circuit.

[0392] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0393] 40 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100G and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0394] Figure 41A shows an example of a cross section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut away.

[0395] A display device 100G shown in FIG. 41A includes a transistor 201, a transistor 205, a light-emitting device 130, and the like between a substrate 151 and a substrate 152.

[0396] 1B except that the configuration of the pixel electrodes is different. For details of the light-emitting device, refer to Embodiment 1.

[0397] The light-emitting device 130 has a conductive layer 112, a conductive layer 126 on the conductive layer 112, and a conductive layer 129 on the conductive layer 126. The conductive layer 112, the conductive layer 126, and the conductive layer 129 may be collectively referred to as a pixel electrode, or a part of them may be referred to as a pixel electrode.

[0398] The conductive layer 112 is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 126 is located outside an end of the conductive layer 112. An end of the conductive layer 126 and an end of the conductive layer 129 are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112 and the conductive layer 126, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129.

[0399] The conductive layer 112 is formed to cover the opening provided in the insulating layer 214. The recess in the conductive layer 112 is filled with a layer 128.

[0400] The layer 128 has a function of planarizing a recessed portion of the conductive layer 112. A conductive layer 126 electrically connected to the conductive layer 112 is provided over the conductive layer 112 and the layer 128. Therefore, a region overlapping with the recessed portion of the conductive layer 112 can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0401] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the organic insulating material that can be used for the filling layer 127 described above can be used for the layer 128.

[0402] While Figure 41A shows an example in which the top surface of layer 128 has a flat portion, the shape of layer 128 is not particularly limited. The top surface of layer 128 may be configured to have a recessed shape in the center and its vicinity in a cross-sectional view, i.e., a concave curved shape. Alternatively, the top surface of layer 128 may be configured to have a bulging shape in the center and its vicinity in a cross-sectional view, i.e., a convex curved shape. Alternatively, the top surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. Furthermore, the number of convex curved surfaces and concave curved surfaces on the top surface of layer 128 is not limited and may be one or more.

[0403] The height of the top surface of layer 128 and the height of the top surface of conductive layer 112 may be the same or approximately the same, or may be different from each other. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of conductive layer 112.

[0404] The edges of the conductive layer 126, the conductive layer 129, and the LED layer 134 are aligned or substantially aligned, so that the entire area where the conductive layer 126 is provided can be used as the light-emitting area of ​​the light-emitting device 130, thereby increasing the aperture ratio of the pixel.

[0405] A portion of the top surface and side surfaces of the LED layer 134 are covered with an insulating layer 125 and a filling layer 127. A mask layer 118 is located between the LED layer 134 and the insulating layer 125. A conductive layer 115 is provided on the LED layer 134, the insulating layer 125, and the filling layer 127. Each of the conductive layers 115 is a continuous film provided in common to a plurality of light-emitting devices.

[0406] A protective layer 131 is provided on the light-emitting device 130. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A light-shielding layer 117 is provided on the substrate 152. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device. In FIG. 41A , the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0407] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. In this example, the conductive layer 123 has a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layer 112, a conductive film obtained by processing the same conductive film as the conductive layer 126, and a conductive film obtained by processing the same conductive film as the conductive layer 129. Ends of the conductive layer 123 are covered with a mask layer 118, an insulating layer 125, and a filling layer 127. In addition, a conductive layer 115 is provided on the conductive layer 123. In the connection portion 140, the conductive layer 123 and the conductive layer 115 are in direct contact with each other and are electrically connected.

[0408] The display device 100G is a top-emission type. Light emitted from the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects light, and the counter electrode (conductive layer 115) contains a material that transmits light.

[0409] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor described in the above embodiment.

[0410] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0411] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0412] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0413] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are preferably formed using an inorganic insulating film. Examples of inorganic insulating films that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0414] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 112, the conductive layer 126, the conductive layer 129, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112, the conductive layer 126, the conductive layer 129, or the like.

[0415] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0416] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0417] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0418] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0419] A semiconductor layer of the transistor preferably includes an oxide semiconductor. That is, the display device of this embodiment preferably includes an OS transistor.

[0420] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0421] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0422] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0423] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0424] To increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain breakdown voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0425] When a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger number of gray levels to be displayed in the pixel circuit.

[0426] In terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0427] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0428] The metal oxide used in the semiconductor layer preferably contains, for example, indium, an element M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0429] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0430] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0431] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0432] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0433] All the transistors included in the display portion 162 may be OS transistors, all the transistors included in the display portion 162 may be Si transistors, or some of the transistors included in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0434] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that a more preferable example is a structure in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0435] For example, one of the transistors included in the display portion 162 functions as a transistor for controlling a current flowing through a light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows a large current to flow through the light-emitting device in the pixel circuit.

[0436] On the other hand, another transistor included in the display portion 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less). Therefore, power consumption can be reduced by stopping the driver when displaying a still image.

[0437] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0438] As described above, the display device of one embodiment of the present invention can significantly reduce leakage current that may flow through a transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current, side leakage current, or the like). Furthermore, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. By using a structure in which leakage current that may flow through a transistor and lateral leakage current between light-emitting devices are extremely low, light leakage that may occur during black display (so-called floating black) can be minimized.

[0439] 41B and 41C show other examples of transistor configurations.

[0440] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0441] 41B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0442] 41C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 41C . In FIG. 41C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0443] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layer 112, a conductive film obtained by processing the same conductive film as the conductive layer 126, and a conductive film obtained by processing the same conductive film as the conductive layer 129. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0444] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, on the connection section 140, and on the circuit 164. Various optical members can be disposed on the outside of the substrate 152.

[0445] The substrate 151 and the substrate 152 can be made of any of the materials that can be used for the substrate 120 .

[0446] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0447] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0448] 42 includes a stack of a supporting substrate 745, an adhesive layer 742, a resin layer 743, and an insulating layer 744 instead of the substrate 151 shown in FIG. 41 , and includes a protective layer 740 instead of the substrate 152. The transistor 205 and the like are provided over the insulating layer 744 provided over the resin layer 743.

[0449] The support substrate 745 is a substrate containing an organic resin, glass, or the like, and is thin enough to be flexible. The resin layer 743 is a layer containing an organic resin such as polyimide resin or acrylic resin. The insulating layer 744 contains an inorganic insulating film such as silicon oxide, silicon oxynitride, or silicon nitride. The resin layer 743 and the support substrate 745 are bonded together by an adhesive layer 742. The resin layer 743 is preferably thinner than the support substrate 745.

[0450] The protective layer 131 and the protective layer 740 are bonded together by an adhesive layer 142. A glass substrate or a resin film can be used for the protective layer 740. The protective layer 740 may be an optical member such as a polarizing plate or a scattering plate, an input device such as a touch sensor panel, or a configuration in which two or more of these are stacked.

[0451] The display device 100H can be suitably used as a flexible display. FIG. 43 illustrates the display device 100H in a curved state. Note that FIG. 43 illustrates the display device 100H curved convexly toward the light-emitting surface (here, the protective layer 740), but one embodiment of the present invention is not limited thereto. The display device 100H may be curved concavely toward the light-emitting surface. Alternatively, the display device 100H may have a convexly curved region and a concavely curved region toward the light-emitting surface.

[0452] 42 and 43 , the display device 100H may have a region P2 where the support substrate 745 and the adhesive layer 742 are not provided. By not providing the support substrate 745 in the region P2, the region P2 can be bent with an extremely small radius of curvature. For example, by folding the region P2 back, the FPC 172 can be placed on the back side of the display unit 162. This allows the electronic device in which the display device 100H is mounted to be miniaturized.

[0453] The region P2 may be configured without providing an inorganic insulating film such as the insulating layer 744. By providing as little inorganic insulating film as possible in the region P2 and configuring the region P2 to have a stack of only a conductive layer containing a metal or an alloy and a layer containing an organic material, it is possible to prevent cracks from occurring when the region P2 is bent.

[0454] In the connection portion 204, the wiring 760 is electrically connected to the FPC 172 through the connection layer 144, the conductive layer 132, and the connection layer 242. The wiring 760 has an example of a stacked structure of a conductive film obtained by processing the same conductive film as the conductive layer 112, a conductive film obtained by processing the same conductive film as the conductive layer 126, and a conductive film obtained by processing the same conductive film as the conductive layer 129. The wiring 760 is electrically connected to the transistor 201.

[0455] This embodiment mode can be combined with other embodiment modes as appropriate.

[0456] Embodiment 5 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0457] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0458] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0459] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0460] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0461] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0462] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0463] 44A to 44D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0464] The electronic device 700A shown in Figure 44A and the electronic device 700B shown in Figure 44B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0465] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can provide an extremely high-definition display.

[0466] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0467] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0468] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0469] The electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0470] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0471] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0472] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0473] The electronic device 800A shown in Figure 44C and the electronic device 800B shown in Figure 44D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0474] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0475] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0476] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0477] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0478] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 44C and other figures, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0479] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0480] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. The detection unit may be, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging). By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0481] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0482] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0483] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 44A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 44C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0484] The electronic device may have an earphone unit. Electronic device 700B shown in Fig. 44B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or wearing unit 723.

[0485] Similarly, electronic device 800B shown in Fig. 44D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0486] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0487] As described above, the electronic devices of one embodiment of the present invention are suitable for both glasses-type electronic devices (such as the electronic devices 700A and 700B) and goggle-type electronic devices (such as the electronic devices 800A and 800B).

[0488] An electronic device according to one embodiment of the present invention can transmit information to an earphone via a wired or wireless connection.

[0489] The electronic device 6500 shown in FIG. 45A is a portable information terminal that can be used as a smartphone.

[0490] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0491] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0492] FIG. 45B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0493] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0494] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0495] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0496] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0497] 45C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0498] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0499] 45C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0500] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0501] 45D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0502] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0503] 45E and 45F show an example of digital signage.

[0504] 45E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0505] 45F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0506] 45E and 45F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0507] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0508] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0509] 45E and 45F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Furthermore, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0510] The digital signage 7300 or the digital signage 7400 can also be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0511] The electronic device shown in Figures 46A to 46G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0512] The electronic devices shown in Figures 46A to 46G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may be provided with a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), display the captured images on a display unit, etc.

[0513] The electronic devices shown in Figures 46A to 46G will be described in detail below.

[0514] FIG. 46A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 46A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0515] 46B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while storing the mobile information terminal 9102 in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0516] 46C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0517] FIG. 46D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0518] 46E to 46G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 46E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 46G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 46F is a perspective view of a state in the process of changing from one of FIG. 46E and FIG. 46G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0519] This embodiment mode can be combined with other embodiment modes as appropriate.

[0520] 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100: display device, 101: layer, 105: transistor, 107a: colored layer, 107b: colored layer, 107c: colored layer, 107: colored layer, 109: color conversion layer, 110a: subpixel, 110b: subpixel, 110c: subpixel, 110d: subpixel, 110e: subpixel, 110: pixel, 111f: conductive film, 111: conductive layer, 112: conductive layer, 115: conductive layer, 116: connection layer, 117: light-shielding layer , 118A: mask layer, 118f: mask film, 118: mask layer, 120a: substrate, 120: substrate, 121: reflective layer, 122a: adhesive layer, 122: resin layer, 123: conductive layer, 124a: pixel, 124b: pixel, 125f: insulating film, 125: insulating layer, 126: conductive layer, 127f: filling film, 127: filling layer, 128: layer, 129: conductive layer, 130: light-emitting device, 131: protective layer, 132f: conductive film, 132: conductive layer, 133: lens, 134f: LED film, 134: LED layer, 135: light-shielding layer, 136: LED chip, 137: conductive layer, 138: connection layer, 13 9: substrate, 140: connection portion, 142: adhesive layer, 144: connection layer, 151: substrate, 152: substrate, 162: display portion, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180: substrate, 182f: semiconductor film, 182: semiconductor layer, 184f: light-emitting film, 184: light-emitting layer, 186f: semiconductor film, 186: semiconductor layer, 188: LED substrate, 190A: resist mask, 190B: resist mask, 201: transistor, 204: connection portion, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: Insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug,274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor Transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing portion, 727: earphone portion, 740: protective layer, 742: adhesive layer, 743: resin layer, 744 : insulating layer, 745: supporting substrate, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 760: wiring, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 651 0: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device,7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first light-emitting device, a second light-emitting device, a first insulating layer, a filler layer, and a second insulating layer; the first light emitting device has a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer; the second light emitting device has a second electrode, a second semiconductor layer on the second electrode, and the common electrode on the second semiconductor layer; the first insulating layer has a region in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer; the filling layer has a region overlapping a side surface of the first semiconductor layer and a side surface of the second semiconductor layer with the first insulating layer interposed therebetween; the second insulating layer has a region in contact with an upper surface of the first semiconductor layer, the filling layer has a region overlapping with an upper surface of the first semiconductor layer via the second insulating layer; The common electrode has a region in contact with the upper surface of the filling layer.

2. a first light-emitting device, a second light-emitting device, a first insulating layer, a filling layer, a second insulating layer, a coloring layer, and a color conversion layer; the first light emitting device has a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer; the second light emitting device has a second electrode, a second semiconductor layer on the second electrode, and the common electrode on the second semiconductor layer; the first insulating layer has a region in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer; the filling layer has a region overlapping a side surface of the first semiconductor layer and a side surface of the second semiconductor layer with the first insulating layer interposed therebetween; the second insulating layer has a region in contact with an upper surface of the first semiconductor layer, the filling layer has a region overlapping with an upper surface of the first semiconductor layer via the second insulating layer; the common electrode is in contact with the upper surface of the filling layer; the coloring layer has a region overlapping with the first light-emitting device via the color conversion layer, The color conversion layer comprises a phosphor or a quantum dot.

3. In claim 1 or claim 2, an end of the filling layer is located on the first semiconductor layer and the second semiconductor layer; The end of the filling layer has a tapered shape in a cross-sectional view.

4. In claim 1 or claim 2, an end of the first insulating layer is located on the first semiconductor layer and the second semiconductor layer; The display device, wherein the end of the first insulating layer has a tapered shape in a cross-sectional view.

5. In claim 1 or claim 2, A display device in which an end of the filling layer is located outside an end of the first insulating layer.

6. In claim 1 or claim 2, The filling layer has a convex curved shape on the upper surface in a cross-sectional view.

7. In claim 1 or claim 2, A reflective layer is provided. the reflective layer is located between the first insulating layer and the filling layer; The display device, wherein the reflective layer has an area that overlaps with side surfaces of the first semiconductor layer and the second semiconductor layer via the first insulating layer.

8. In claim 1 or claim 2, A display device, wherein an end portion of the second insulating layer has a tapered shape in a cross-sectional view.

9. In claim 1 or claim 2, the first insulating layer comprises an inorganic material; The filler layer comprises an organic material.

10. In claim 1 or claim 2, the first insulating layer comprises an inorganic material; the filler layer comprises an organic material; The display device, wherein the filling layer is insulating.

11. In claim 1 or claim 2, the first insulating layer comprises an inorganic material; the filler layer comprises an organic material; A display device wherein the filling layer is conductive.

12. In claim 1 or claim 2, The display device, wherein the first semiconductor layer and the second semiconductor layer are compounds containing a Group 13 element and a Group 15 element, respectively.

13. In claim 1 or claim 2, a layer; the layer includes a first transistor and a second transistor; the first light-emitting device and the second light-emitting device are disposed on the layer; the first light emitting device is electrically connected to the first transistor; The second light-emitting device is electrically connected to the second transistor.

14. A display module comprising: the display device according to claim 1 or 2; and at least one of a connector and an integrated circuit.

15. An electronic device comprising the display module according to claim 14 and at least one of a housing, a battery, a camera, a speaker, and a microphone.