Method for manufacturing semiconductor apparatus

Abstract

This method for manufacturing a semiconductor apparatus includes: a step for, after coating an adhesive (60) that has heat-dissipating properties and thermosetting properties onto the surfaces of a plurality of devices (20) that are bonded to the surface of an organic substrate (10), mounting heat-dissipating blocks (50) and attaching by heat treating; a step for coating an adhesive (100) that has heat-dissipating properties and thermosetting properties onto surfaces of the heat-dissipating blocks (50), so as to be higher than a height A of a mold resin (70) that encapsulates the devices (20) in a subsequent step; and a step for heat treating while adjusting the height by the thickness of the adhesive (100), so that the height from the surface of the organic substrate (10) to the surface of the adhesive (100) becomes the height A of the mold resin (70), and curing the adhesive (100).

Description

Semiconductor device manufacturing method

[0001] The present application relates to a method for manufacturing a semiconductor device.

[0002] In a hybrid module for high-frequency products, which is an example of a conventional semiconductor device, the height of the heat dissipation block is adjusted so that it is exposed on the surface of the module when it is sealed with mold resin. One side of the heat dissipation block is in contact with the device that generates heat during operation via a high-heat dissipation adhesive, and the other side is exposed on the surface of the module, so that heat generated by the device can be easily dissipated outside the module.

[0003] For example, Patent Document 1 discloses a method for manufacturing a semiconductor device in which one side of a heat dissipation block contacts the back surface of a die stage portion on which a semiconductor element is mounted, and the outer side is surrounded by resin so that the other side is exposed on the surface of the module.

[0004] JP-A-04-299848 (paragraph 0011, Figure 1)

[0005] However, with conventional semiconductor device manufacturing methods, it is difficult to precisely align the surface heights of multiple heat dissipation blocks due to dimensional tolerances in the thickness of the heat dissipation blocks and the state of bonding to the organic substrate. If the surface height of the heat dissipation blocks is higher than expected, the mold die and the heat dissipation blocks come into contact when clamped with the mold resin for molding, resulting in device destruction due to the clamping pressure of the mold die. Furthermore, if the surface height of the heat dissipation blocks is lower than expected, the mold resin covers the heat dissipation blocks, resulting in a problem of reduced heat dissipation performance of the device.

[0006] The present application has been made to solve the above-mentioned problems, and aims to provide a method for manufacturing a semiconductor device that accurately aligns the height of the heat dissipation block surface and exposes the heat dissipation block on the module surface without damaging the device.

[0007] The method for manufacturing a semiconductor device disclosed in the present application is characterized by including the steps of applying a first adhesive having heat dissipation and thermosetting properties to the surfaces of a plurality of devices bonded to the surface of a substrate, then mounting a heat dissipation block and performing heat treatment to bond them; applying a second adhesive having heat dissipation and thermosetting properties to the surface of the heat dissipation block so that the surface is higher than the height of a resin that will seal the devices in a subsequent process; and performing heat treatment while adjusting the height with the thickness of the second adhesive so that the height to the surface of the second adhesive is the height of the resin, thereby hardening the second adhesive.

[0008] In addition, the method for manufacturing a semiconductor device disclosed in the present application is characterized by including the steps of applying an adhesive having heat dissipation and thermosetting properties to the surface of a plurality of devices bonded to the surface of a substrate so that when a heat dissipation block is mounted, the adhesive will be higher than the height of a resin that will seal the device in a subsequent process, and then mounting the heat dissipation block; and hardening the adhesive by heat treatment while adjusting the height with the thickness of the adhesive so that the height to the surface of the heat dissipation block becomes the height of the resin.

[0009] According to the present invention, by precisely aligning the height of the heat dissipation block surface, the heat dissipation block can be exposed on the module surface without damaging the device, and a high-performance semiconductor device can be easily obtained.

[0010] Fig. 1 is a flowchart showing manufacturing steps in a method for manufacturing a semiconductor device according to a first embodiment. Fig. 2 is a cross-sectional view showing manufacturing steps in a method for manufacturing a semiconductor device according to a second embodiment. Fig. 3 is a flowchart showing manufacturing steps in a method for manufacturing a semiconductor device according to a third embodiment. Fig. 4 is a cross-sectional view showing manufacturing steps in a method for manufacturing a semiconductor device according to a fourth embodiment. Fig. 5 is a cross-sectional view showing manufacturing steps in a method for manufacturing a semiconductor device according to the fourth embodiment.

[0011] First Embodiment. Figure 1 is a flowchart illustrating manufacturing steps in a method for manufacturing a semiconductor device according to a first embodiment of the present application. Figure 2 is a cross-sectional view illustrating manufacturing steps in a method for manufacturing a semiconductor device according to a first embodiment of the present application. Figure 2(a) is a cross-sectional view of the semiconductor device after a heat dissipation block is mounted on a device on an organic substrate and heat-treated, Figure 2(b) is a cross-sectional view of the semiconductor device after adhesive is applied to the heat dissipation block, Figure 2(c) is a cross-sectional view of the semiconductor device after the adhesive applied to the heat dissipation block is heat-treated, and Figure 2(d) is a cross-sectional view of the semiconductor device after sealing with mold resin.

[0012] 2A, a first adhesive, adhesive 60 with high heat dissipation and thermosetting properties, is applied to a plurality of devices 20 bonded to an organic substrate 10 with solder 40. A heat dissipation block is then mounted, and heat treatment is performed to harden and bond the adhesive 60 (step S101). The height of the heat dissipation block 50 after bonding is set to be lower than the height A of the package. At this time, variations in the height of the top of the heat dissipation block 50 occur due to dimensional tolerances in the thicknesses of the organic substrate 10, solder 40, devices 20, adhesive 60, and heat dissipation block 50, as well as the bonding state on the organic substrate.

[0013] Next, as shown in FIG. 2B, a second adhesive 100 having high heat dissipation and thermosetting properties is applied onto the heat dissipation block 50 so as to be higher than the height A of the package (step S102).

[0014] Next, as shown in FIG. 2(c), all devices 20 are clamped in a jig so that the height of the adhesive 100 applied to the heat dissipation blocks 50 is equal to the package height A, and heat treatment is carried out while adjusting the height with the thickness of the adhesive 100 to harden the adhesive 100 (step S103).

[0015] 2(d), the device 20 is resin-sealed using mold resin 70 to a package height A (step S104), so that the surface of the adhesive 100 is exposed on the upper surface of the package (mold resin 70). At this time, the surface of the adhesive 100 is brought into contact with the mold die via a protective tape or the like to prevent the mold resin 70 from flowing onto the adhesive 100.

[0016] Here, device 20 is bonded using a flip chip, and electrical connection is made from the underside of device 20, so there is no need for electrical continuity on the top surface of device 20, and adhesive 60 and adhesive 100 may be either conductive or insulating adhesive.

[0017] As described above, the manufacturing method of the semiconductor device according to the first embodiment includes the steps of applying adhesive 60 having heat dissipation properties and thermosetting properties to the surfaces of a plurality of devices 20 bonded to the surface of organic substrate 10, and then mounting heat dissipation block 50 and performing heat treatment to bond them; applying adhesive 100 having heat dissipation properties and thermosetting properties to the surface of heat dissipation block 50 so that the adhesive 100 is higher than height A of mold resin 70 that will seal devices 20 in a subsequent process; and performing heat treatment while adjusting the height with the thickness of adhesive 100 so that the height from the surface of organic substrate 10 to the surface of adhesive 100 becomes height A of mold resin 70, thereby hardening adhesive 100. Therefore, by leveling with the thickness of adhesive 100 so that the height from organic substrate 10 to adhesive 100 is the same as package height A, it is possible to absorb dimensional tolerances in the thicknesses of the organic substrate, solder, devices, first adhesive, and heat dissipation block and variations due to the bonding state on the organic substrate. By precisely aligning the height of the heat dissipation portion, the heat dissipation portion can be exposed on the surface of the module without damaging the device, and a high-performance semiconductor device can be easily obtained.

[0018] This makes the height of the second adhesive higher than the height A of the package, so that the second adhesive comes into contact with the mold die during molding resin sealing, and the device is not destroyed by the clamping pressure of the mold die.

[0019] In addition, the height of the second adhesive is lower than the package height A, so the molding resin does not flow into the top of the heat dissipation block. Furthermore, compared to conventional methods, the cutting process can be reduced, and problems such as burrs on the heat dissipation block and chipped molding resin that are prone to quality defects can be eliminated.

[0020] Second Embodiment In the first embodiment, the step of heat-treating and curing the adhesive 100 is carried out independently, but in the second embodiment, a case will be described in which this step is carried out simultaneously with the step of resin-encapsulating the device 20.

[0021] 3A and 3B are a flowchart and a cross-sectional view, respectively, showing manufacturing steps in a method for manufacturing a semiconductor device according to a second embodiment of the present invention. Fig. 3A is a cross-sectional view of the semiconductor device after a heat dissipation block is mounted on a device on an organic substrate and heat treatment is performed. Fig. 3B is a cross-sectional view of the semiconductor device after an adhesive is applied to the heat dissipation block. Fig. 3C is a cross-sectional view of the semiconductor device after sealing with a molding resin and hardening the adhesive.

[0022] In the second embodiment, the method for manufacturing a semiconductor device in the steps S301 (FIG. 4(a)) to S302 (FIG. 4(b)) of FIG. 3 is the same as the method for manufacturing a semiconductor device in the steps S101 (FIG. 2(a)) to S102 (FIG. 2(b)) of FIG. 1 in the first embodiment, and the corresponding parts are given the same reference numerals and their description will be omitted.

[0023] After step S302, in the second embodiment, the step of heat-treating the adhesive 100 is not performed separately. Instead, the uncured adhesive 100 is sandwiched between the molding dies, and heat treatment is performed while adjusting the thickness of the adhesive 100 so that the height up to the adhesive 100 applied on the heat dissipation blocks 50 on all of the devices 20 is equal to the package height A, as shown in Figure 4(c). This hardens the adhesive 100, and simultaneously seals the devices 20 with mold resin 70 (step S303), so that the adhesive 100 is exposed on the top surface of the package (mold resin 70). At this time, a protective tape or the like is sandwiched between the molding die and the adhesive 100 to prevent the molding die and the adhesive 100 from adhering to each other.

[0024] Here, device 20 is bonded using a flip chip, and electrical connection is made from the underside of device 20, so there is no need for electrical continuity on the top surface of device 20, and adhesive 60 and adhesive 100 may be either conductive or insulating adhesive.

[0025] As described above, the manufacturing method of the semiconductor device according to the second embodiment includes the steps of applying the adhesive 60 having heat dissipation properties and thermosetting properties to the surfaces of the plurality of devices 20 bonded to the surface of the organic substrate 10, and then mounting the heat dissipation block 50 and performing heat treatment to bond them; applying the adhesive 100 having heat dissipation properties and thermosetting properties to the surface of the heat dissipation block 50 so that the adhesive 100 is higher than the height A of the mold resin 70 that will seal the devices 20 in a subsequent step; and performing heat treatment while adjusting the height with the thickness of the adhesive 100 so that the height from the surface of the organic substrate 10 to the surface of the adhesive 100 becomes the height A of the mold resin 70, thereby hardening the adhesive 100. In the step of hardening the adhesive 100, the devices 20 are sandwiched between mold dies and heat treated while adjusting the height to harden the adhesive 100, and the devices 20 are sealed with the mold resin 70. Therefore, not only can the effects of the first embodiment be obtained, but it is not necessary to perform the step of heat treating the second adhesive separately, which makes it possible to reduce the number of steps.

[0026] Embodiment 3 In the first and second embodiments, the thickness of the adhesive 100 is adjusted to match the height of the package, but in the third embodiment, a case will be described in which the thickness of the adhesive 60 is adjusted to match the height of the package.

[0027] Fig. 5 is a flowchart showing manufacturing steps in a method for manufacturing a semiconductor device according to a third embodiment of the present invention. Fig. 6 is a cross-sectional view showing manufacturing steps in a method for manufacturing a semiconductor device according to the third embodiment of the present invention. Fig. 6(a) is a cross-sectional view of the semiconductor device after a heat dissipation block is mounted on a device on an organic substrate, Fig. 6(b) is a cross-sectional view of the semiconductor device after the adhesive on which the heat dissipation block is mounted has been heat-treated, and Fig. 6(c) is a cross-sectional view of the semiconductor device after sealing with a mold resin.

[0028] 6A, a thick layer of adhesive 60 with high heat dissipation and thermosetting properties is applied to a plurality of devices 20 bonded to an organic substrate 10 with solder 40, and then a heat dissipation block is mounted (step S501). The height of the heat dissipation block 50 after mounting is set higher than the package height A by the amount of the thickly applied adhesive 60. At this time, variations in the height of the top of the heat dissipation block 50 occur due to dimensional tolerances in the thicknesses of the organic substrate 10, solder 40, devices 20, adhesive 60, and heat dissipation block 50, as well as the bonding state on the organic substrate.

[0029] Next, as shown in FIG. 6(b), all devices 20 are clamped in a jig so that the height up to the heat dissipation block 50 on each device 20 is the package height A, and heat treatment is carried out while adjusting the height with the thickness of the adhesive 60 to harden the adhesive 100 (step S502).

[0030] 6(c), the device 20 is resin-encapsulated using mold resin 70 to a package height A (step S503), and the surface of the heat dissipation block 50 is exposed on the upper surface of the package (mold resin 70). At this time, the surface of the heat dissipation block 50 is brought into contact with the mold die via protective tape or the like to prevent the mold resin 70 from flowing onto the heat dissipation block 50.

[0031] Here, the device 20 is bonded using a flip chip, and electrical connection is made from the underside of the device 20, so there is no need for electrical continuity on the top surface of the device 20, and the adhesive 60 may be either a conductive adhesive or an insulating adhesive.

[0032] As described above, the manufacturing method of the semiconductor device according to the third embodiment includes the steps of applying the adhesive 60 having heat dissipation properties and thermosetting properties to the surfaces of the plurality of devices 20 bonded to the surface of the organic substrate 10 so that the adhesive 60 will be higher than the height of the mold resin 70 that will seal the devices 20 in a later process when the heat dissipation block 50 is mounted, and then mounting the heat dissipation block 50; and the steps of performing a heat treatment while adjusting the height with the thickness of the adhesive 60 so that the height from the surface of the organic substrate 10 to the surface of the heat dissipation block 50 becomes the height A of the mold resin 70, thereby hardening the adhesive 60. Therefore, by leveling with the thickness of the adhesive 60 so that the height from the organic substrate 10 to the surface of the heat dissipation block 50 becomes the same as the height A of the mold resin 70, it is possible to absorb dimensional tolerances in the thicknesses of the organic substrate, solder, devices, adhesive, and heat dissipation block, as well as variations due to the bonding state on the organic substrate. By precisely aligning the height of the heat dissipation block surface, it is possible to expose the heat dissipation block on the module surface without damaging the device, and a high-performance semiconductor device can be easily obtained.

[0033] This makes the height of the heat dissipation block greater than the height A of the package, so that the heat dissipation block does not come into contact with the mold die during molding resin sealing, and the device is not destroyed by the clamping pressure of the mold die.

[0034] In addition, the height of the adhesive is lower than the package height A, so the molding resin does not flow into the top of the heat dissipation block. Furthermore, compared to conventional methods, the cutting process can be reduced, and problems such as burrs on the heat dissipation block and chipping of the molding resin, which are prone to quality defects, can be eliminated.

[0035] Fourth Embodiment In the third embodiment, the step of heat-treating and curing the adhesive 60 is carried out independently, but in the fourth embodiment, a case will be described in which this step is carried out simultaneously with the step of sealing the device 20 with resin.

[0036] Fig. 7 is a flowchart showing manufacturing steps in a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention. Fig. 8 is a cross-sectional view showing manufacturing steps in a method for manufacturing a semiconductor device according to the fourth embodiment of the present invention. Fig. 8(a) is a cross-sectional view of the semiconductor device after a heat dissipation block has been mounted on a device on an organic substrate, and Fig. 8(b) is a cross-sectional view of the semiconductor device after sealing with a molding resin and curing an adhesive.

[0037] In the fourth embodiment, the method for manufacturing a semiconductor device in step S701 of FIG. 7 (FIG. 8(a)) is the same as the method for manufacturing a semiconductor device in step S501 of FIG. 5 (FIG. 6(a)) in the third embodiment, and the corresponding parts are given the same reference numerals and their description will be omitted.

[0038] After step S701, in the fourth embodiment, the step of heat-treating the adhesive 60 is not performed separately, but the uncured adhesive 60 is sandwiched between the molding dies, and heat treatment is performed while adjusting the thickness of the adhesive 60 so that the height up to the top of all the heat dissipation blocks 50 on the device 20 is equal to the package height A, as shown in Fig. 8(b), to cure the adhesive 60 and resin-seal the device 20 with mold resin 70 (step S802), so that the surface of the heat dissipation block 50 is exposed on the top surface of the package (mold resin 70). At this time, the surface of the heat dissipation block 50 is in contact with the mold die via protective tape or the like to prevent the mold resin 70 from flowing onto the heat dissipation block 50.

[0039] Here, the device 20 is bonded using a flip chip, and electrical connection is made from the underside of the device 20, so there is no need for electrical continuity on the top surface of the device 20, and the adhesive 60 may be either a conductive adhesive or an insulating adhesive.

[0040] As described above, the manufacturing method of the semiconductor device according to the fourth embodiment includes the steps of applying a heat-dissipating and thermosetting adhesive 60 to the surfaces of a plurality of devices 20 bonded to the surface of an organic substrate 10 so that the adhesive 60 will be higher than the height of a mold resin 70 that will seal the devices 20 in a later process when the heat dissipation block 50 is mounted, and then mounting the heat dissipation block 50; and the steps of performing a heat treatment while adjusting the height with the thickness of the adhesive 60 so that the height from the surface of the organic substrate 10 to the surface of the heat dissipation block 50 becomes height A of the mold resin 70, and hardening the adhesive 60. In the step of hardening the adhesive 60, the devices 20 are sandwiched between mold dies and heat-treated while adjusting the height, hardening the adhesive 60, and sealing the devices 20 with the mold resin 70. Therefore, not only can the effects of the third embodiment be obtained, but the step of heat-treating the adhesive does not need to be performed separately, making it possible to reduce the number of steps.

[0041] Although various exemplary embodiments and examples are described in this application, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless variations not illustrated are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, or where at least one component is extracted and combined with components of another embodiment.

[0042] 10 organic substrate, 20 device, 40 solder, 50 heat dissipation block, 60 adhesive, 70 molding resin, 100 adhesive.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: applying a first adhesive having heat dissipation and thermosetting properties to the surfaces of a plurality of devices bonded to the surface of a substrate, then mounting a heat dissipation block and performing heat treatment to bond them; applying a second adhesive having heat dissipation and thermosetting properties to the surface of the heat dissipation block so that the second adhesive is higher than the height of a resin that will seal the devices in a subsequent process; and performing heat treatment while adjusting the height with the thickness of the second adhesive so that the height to the surface of the second adhesive becomes the height of the resin, thereby hardening the second adhesive.

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that in the step of hardening the second adhesive, the device is clamped in a mold, and heat-treated while adjusting the height, thereby hardening the second adhesive and sealing the device with the resin.

3. A method for manufacturing a semiconductor device, comprising: a step of applying a heat-dissipating and thermosetting adhesive to the surface of a plurality of devices bonded to the surface of a substrate so that when a heat dissipation block is mounted, the adhesive will be higher than the height of a resin that will seal the devices in a subsequent process; and a step of performing a heat treatment while adjusting the height with the thickness of the adhesive so that the height to the surface of the heat dissipation block becomes the height of the resin, thereby hardening the adhesive.

4. A method for manufacturing a semiconductor device as described in claim 3, characterized in that in the step of hardening the adhesive, the device is clamped between molds and heat-treated while adjusting the height, thereby hardening the adhesive and sealing the device with the resin.