Semiconductor laser device, semiconductor laser element collective submount, light-emitting device manufacturing method, and light-emitting element submount manufacturing method

Abstract

This semiconductor laser device (a light emitting device (1)) is provided with: a base material (70) which has a first main surface (70a); a metal film (50) which is disposed on the first main surface (70a) and is formed of a sintered body of metal fine particles; and an end face emission-type semiconductor laser element (a light emitting element (10)) which is bonded to the metal film (50). The semiconductor laser element is disposed such that, in a plan view of the first main surface (70a), a light emission surface (10F) of the semiconductor laser element protrudes from a first edge (70ae) of the first main surface (70a) toward the outside of the first main surface (70a).

Description

Semiconductor laser device, submount for semiconductor laser element, collective submount for semiconductor laser element, method for manufacturing light-emitting device, and method for manufacturing submount for light-emitting element

[0001] The present disclosure relates to a semiconductor laser device, a submount for a semiconductor laser element, a collective submount for a semiconductor laser element, a method for manufacturing a light-emitting device, and a method for manufacturing a submount for a light-emitting element.

[0002] Conventionally, light-emitting devices have been known in which a light-emitting element such as a semiconductor laser element is mounted on a base such as a submount (see, for example, Patent Document 1). The light-emitting element is bonded to the base in a predetermined position and orientation. For example, solder is used to bond the light-emitting element to the base. Such light-emitting devices are mounted on a mounting base, as described in Patent Document 1, for example.

[0003] International Publication No. 2021 / 230294

[0004] A light-emitting device such as that described in Patent Document 1 is bonded to a mounting base using, for example, solder. At this time, the mounting base needs to be heated to melt the solder disposed between the base of the light-emitting device and the mounting base. As a result, the light-emitting device is also heated, which may melt the solder disposed between the base of the light-emitting device and the light-emitting element. This may cause the relative position and orientation of the light-emitting element with respect to the base to change. Consequently, the optical axis of the light-emitting element may deviate from its predetermined position.

[0005] Therefore, the present disclosure aims to suppress changes in the relative position and attitude of the light-emitting element with respect to the base when mounted on a mounting base or the like in a light-emitting device, etc., that includes a light-emitting element such as a semiconductor laser element and a base.

[0006] In order to achieve the above-mentioned object, a semiconductor laser device according to one aspect of the present disclosure comprises a substrate having a first main surface, a metal film which is a sintered body of metal microparticles and is arranged on the first main surface, and an edge-emitting semiconductor laser element which is bonded to the metal film, and the semiconductor laser element is arranged so that, in a planar view of the first main surface, the light-emitting surface of the semiconductor laser element protrudes outward from a first edge of the first main surface.

[0007] In order to achieve the above-mentioned object, a submount for a semiconductor laser element according to one aspect of the present disclosure comprises a base having a first main surface, and a metal film arranged on the first main surface and being a sintered body of metal microparticles, the first main surface having a semiconductor laser element bonding region, the semiconductor laser element bonding region corresponding to the region where the semiconductor laser element is bonded, the metal film covering the semiconductor laser element bonding region, the metal film having a thick film portion outside the semiconductor laser element bonding region, and the thickness of the thick film portion being thicker than the thickness of the metal film on the semiconductor laser element bonding region.

[0008] In order to achieve the above-mentioned object, an aggregate submount for semiconductor laser elements according to one embodiment of the present disclosure comprises a substrate base material having a first main surface, and a composite metal film arranged on the first main surface and being a sintered body of metal microparticles, the first main surface having a plurality of semiconductor laser element bonding regions, each of the plurality of semiconductor laser element bonding regions corresponding to a region where a plurality of semiconductor laser elements are bonded, the plurality of semiconductor laser element bonding regions being arranged in a matrix of m rows x n columns, where m is either 1 or 2 and n is an integer greater than or equal to 2, and the composite metal film covering the plurality of semiconductor laser element bonding regions.

[0009] In order to achieve the above-mentioned object, a method for manufacturing a light-emitting device according to one embodiment of the present disclosure includes a coating process for coating a paste in which metal microparticles are dispersed in a solvent onto a plurality of light-emitting element bonding regions on a first main surface of a base material; a placement process for arranging a plurality of light-emitting elements onto the plurality of light-emitting element bonding regions; a composite metal film formation process for removing the solvent from the paste and sintering the metal microparticles to form a composite metal film; and a division process for dividing the base material into a plurality of light-emitting devices after the composite metal film formation process.

[0010] In order to achieve the above-mentioned object, a method for manufacturing a submount for a light-emitting element according to another aspect of the present disclosure includes a coating process for coating a paste having metal microparticles dispersed in a solvent onto a first main surface of a substrate base material, a composite metal film formation process for removing the solvent from the paste and sintering the metal microparticles to form a composite metal film, and a division process for dividing the substrate base material after the composite metal film formation process into multiple submounts for light-emitting elements.

[0011] According to the present disclosure, in a light-emitting device including a light-emitting element such as a semiconductor laser element and a base, changes in the relative position and orientation of the light-emitting element with respect to the base can be suppressed when mounted on a mounting base or the like.

[0012] FIG. 1 is a cross-sectional view showing the overall configuration of a light-emitting device according to embodiment 1. FIG. 2 is a schematic view showing a first step of a method for manufacturing a light-emitting device according to embodiment 1. FIG. 3 is a schematic view showing a second step of the method for manufacturing a light-emitting device according to embodiment 1. FIG. 4 is a schematic view showing a third step of the method for manufacturing a light-emitting device according to embodiment 1. FIG. 5 is a schematic view showing a fifth step of the method for manufacturing a light-emitting device according to embodiment 1. FIG. 6 is a graph showing an example of the relationship between time and heating temperature in the method for manufacturing a light-emitting device according to embodiment 1. FIG. 7 is a graph showing another example of the relationship between time and heating temperature in the method for manufacturing a light-emitting device according to embodiment 1. FIG. 8 is a schematic view showing a first step of an example of a dividing step according to embodiment 1. FIG. 9 is a schematic view showing a second step of an example of a dividing step according to embodiment 1. FIG. 10 is a schematic cross-sectional view showing the overall configuration of a light-emitting device according to modification 1 of embodiment 1. FIG. 11 is a schematic cross-sectional view showing the overall configuration of a light-emitting device according to modification 2 of embodiment 1. FIG. 12 is a schematic view showing the configuration of a light-emitting device according to modification 3 of embodiment 1. FIG. 13 is a cross-sectional view showing the overall configuration of a light-emitting device according to embodiment 2. FIG. 14 is a schematic view showing a first step of a method for manufacturing a light-emitting device according to embodiment 2. FIG. 15 is a schematic view showing a second step of a method for manufacturing a light-emitting device according to embodiment 2. 1 is a schematic diagram showing a third step of a method for manufacturing a light-emitting device according to embodiment 2. FIG. 2 is a schematic diagram showing a fourth step of the method for manufacturing a light-emitting device according to embodiment 2. FIG. 3 is a schematic diagram showing a first step of a modified example of the method for manufacturing a light-emitting device according to embodiment 2. FIG. 4 is a schematic diagram showing a second step of the modified example of the method for manufacturing a light-emitting device according to embodiment 2. FIG. 5 is a schematic diagram showing a third step of the modified example of the method for manufacturing a light-emitting device according to embodiment 2. FIG. 6 is a schematic diagram showing a fourth step of the modified example of the method for manufacturing a light-emitting device according to embodiment 2. FIG. 7 is a schematic diagram showing an overall configuration of a light-emitting device according to embodiment 3. FIG. 8 is a schematic diagram showing a first step of a method for manufacturing a light-emitting device according to embodiment 3. FIG. 9 is a schematic diagram showing a second step of the method for manufacturing a light-emitting device according to embodiment 3. FIG. 10 is a schematic diagram showing a third step of the method for manufacturing a light-emitting device according to embodiment 3. FIG. 11 is a schematic diagram showing a fourth step of the method for manufacturing a light-emitting device according to embodiment 3.1 is a schematic diagram showing a fifth step of the method for manufacturing a light emitting device according to embodiment 3. FIG. 2 is a schematic cross-sectional view showing a first modified example of the cross-sectional shape of the base recess according to embodiment 3. FIG. 3 is a schematic cross-sectional view showing a second modified example of the cross-sectional shape of the base recess according to embodiment 3. FIG. 4 is a schematic cross-sectional view showing a third modified example of the cross-sectional shape of the base recess according to embodiment 3. FIG. 5 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 1 of embodiment 3. FIG. 6 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 2 of embodiment 3. FIG. 7 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 3 of embodiment 3. FIG. 8 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 4 of embodiment 3. FIG. 9 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 5 of embodiment 3. FIG. 10 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 6 of embodiment 3. FIG. 11 is a schematic cross-sectional view showing a cross-sectional shape of a light emitting device according to modification 7 of embodiment 3. FIG. 12 is a schematic perspective view showing a method for mounting a light emitting device according to embodiment 4. FIG. 13 is a schematic perspective view showing a configuration of a light emitting module according to embodiment 4. FIG. 13 is a schematic perspective view showing the configuration of a light-emitting module according to a modified example of the fourth embodiment.

[0013] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, arrangement and connection of the components, steps, order of steps, etc. shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0014] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. Furthermore, in each figure, substantially the same components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0015] Furthermore, in this specification, terms indicating the relationship between elements, such as "equal," terms indicating the shape of elements, such as "flat," "parallel," "vertical," "plate-shaped," and "curved," as well as numerical ranges, are not expressions that only express a strict meaning, but are expressions that also include a substantially equivalent range, for example, a difference of about a few percent.

[0016] In this specification, the terms "above" and "below" do not refer to vertically above and below in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. The terms "above" and "below" are used not only when two components are arranged with a gap between them and another component is present between them, but also when two components are arranged closely together and are in contact with each other.

[0017] First Embodiment A light-emitting device according to a first embodiment and a method for manufacturing the same will be described.

[0018] [1-1. Overall Configuration of Light-Emitting Device] The overall configuration of the light-emitting device according to the first embodiment will be described with reference to FIG. 1. FIG. 1 is a cross-sectional view showing the overall configuration of the light-emitting device 1 according to the present embodiment. FIG. 1 shows a cross section perpendicular to the propagation direction of light emitted by the light-emitting device 1. As shown in FIG. 1, the light-emitting device 1 includes a light-emitting element 10, a base 70, and a metal film 50. In the present embodiment, the light-emitting device 1 further includes a base electrode 60, a relay electrode 71, a first electrode 20, and a second electrode 40. The light-emitting device 1 is also an example of a submount for a light-emitting element that includes the base 70 and the metal film 50.

[0019] The light-emitting element 10 is an element that emits light. In this embodiment, the light-emitting element 10 is a semiconductor light-emitting element including a semiconductor stack 10S. More specifically, the light-emitting element 10 is a semiconductor laser element that emits laser light. That is, the light-emitting device 1 according to this embodiment is an example of a semiconductor laser device including a base 70 and a semiconductor laser element. The light-emitting device 1 also includes the base 70 and a metal film 50, and is an example of a submount for a semiconductor laser element to which a semiconductor laser element is bonded. The configuration and dimensions of the light-emitting element 10 are not particularly limited. The light-emitting element 10 may emit, for example, infrared light, visible light, or ultraviolet light. In this embodiment, the light-emitting element 10 emits infrared laser light. The length (in the resonance direction) of the light-emitting element 10 may be approximately 260 μm, the width may be approximately 130 μm, and the thickness may be approximately 100 μm. The light-emitting element 10 according to this embodiment includes a substrate 11, a semiconductor stack 10S, and an insulating film 15. The light emitting element 10 is junction-up mounted on the base 70. That is, the substrate 11 of the light emitting element 10 is joined to the base 70 via the first electrode 20 and the like.

[0020] The substrate 11 is a plate-like member that serves as a base for the light-emitting element 10 .

[0021] The semiconductor stack 10S is a stack including multiple semiconductor layers stacked on a substrate 11. In this embodiment, the semiconductor stack 10S has a first semiconductor layer 12 including a semiconductor of a first conductivity type, an active layer 13 that generates light, and a second semiconductor layer 14 including a semiconductor of a second conductivity type different from the first conductivity type. For example, the first conductivity type and the second conductivity type are n-type and p-type, respectively.

[0022] In this embodiment, the semiconductor stack 10S has a ridge stripe 14R, two grooves 14T, two raised portions 14W, and two stack recesses 10T. Here, the raised portions 14W refer to convex regions on the outer side of the ridge stripe 14R that are arranged adjacent to the ridge stripe 14R with the two grooves 14T sandwiched therebetween in a ridge stripe-type semiconductor laser element. The raised portions 14W are composed of a semiconductor film having a height substantially equal to that of the ridge stripe 14R, or a stacked structure of a semiconductor film and a dielectric film.

[0023] The two grooves 14T are formed in a back surface 10Sb on the back side of an opposing surface 10Sa of the semiconductor laminate 10S that faces the substrate 11, and are recesses that extend parallel to the propagation direction of light in the light emitting element 10 (i.e., the resonance direction of the laser light in this embodiment). The two grooves 14T are formed in the second semiconductor layer 14.

[0024] The ridge stripe 14R is disposed on the back surface 10Sb behind the facing surface 10Sa of the semiconductor laminate 10S that faces the substrate 11, and is a convex portion extending parallel to the direction of light propagation in the light emitting element 10. The ridge stripe 14R protrudes in a direction away from the substrate 11 (upward in FIG. 1). The ridge stripe 14R is a structure for confining the current supplied to the active layer 13 to the central portion in the lateral direction in FIG. 1, and also functions as a waveguide. The longitudinal direction of the ridge stripe 14R is the direction of light propagation.

[0025] Each of the two raised portions 14W is a region between the groove 14T and the side surface 10Sc of the semiconductor laminate 10S, and is a convex portion that protrudes from the bottom of the groove 14T in a direction away from the substrate 11. In other words, the groove 14T is disposed between the raised portion 14W and the ridge stripe 14R.

[0026] The two stack recesses 10T are located between the back surface 10Sb and the side surface 10Sc of the semiconductor stack 10S and are recesses recessed relative to the back surface 10Sb and the side surface 10Sc. Here, the side surface 10Sc is the end surface of the semiconductor stack 10S in the lateral direction (perpendicular to the stacking direction of the semiconductor stack 10S and the light propagation direction) shown in FIG. 1 . In other words, the side surface 10Sc is a surface of the semiconductor stack 10S that is connected to the opposing surface 10Sa and extends along the light propagation direction of the light-emitting element 10. The stack recess 10T extends from the back surface 10Sb to partway through the first semiconductor layer 12. Accordingly, the active layer 13, which is a pn junction included in the semiconductor stack 10S, is exposed in the stack recess 10T. To prevent a conductive member from contacting the exposed active layer 13, the stack recess 10T is covered with an insulating film 15. That is, the insulating film 15 covers the pn junction exposed in the stack recess 10 T. The stack recess 10 T may be part of an isolation trench formed when the light emitting element 10 is separated into individual pieces.

[0027] The insulating film 15 is an insulating film disposed on the back surface 10Sb of the semiconductor laminate 10S. In this embodiment, the insulating film 15 covers the entire surface of the ridge stripe 14R except for the top surface thereof. That is, the insulating film 15 continuously covers the area from one laminate recess 10T to one side surface of the ridge stripe 14R, and also continuously covers the area from the other laminate recess 10T to the other side surface of the ridge stripe 14R. The insulating film 15 is disposed between the semiconductor laminate 10S and the adhesion layer 42. The material of the insulating film 15 is not particularly limited as long as it is electrically insulating. In this embodiment, the insulating film 15 is a silicon oxide film having a thickness of 300 nm.

[0028] The first electrode 20 is a conductive member disposed on the substrate 11. The first electrode 20 is disposed on the main surface of the substrate 11, the main surface being opposite to the main surface on which the semiconductor stack 10S is stacked. In the present embodiment, the first electrode 20 has an adhesion layer 21 and an element bonding layer 22.

[0029] The adhesion layer 21 is a conductive layer disposed between the substrate 11 and the element bonding layer 22. The adhesion layer 21 may have a function of increasing the adhesion between the substrate 11 and the element bonding layer 22. The adhesion layer 21 may be a single layer film or a multilayer film made of at least one of Ti, Al, Cr, Ag, Ni, Pd, and Pt, for example.

[0030] In this embodiment, the adhesion layer 21 has a Ti film with a thickness of 100 nm in contact with the substrate 11 and a Pt film with a thickness of 150 nm in contact with the Ti film.

[0031] The element bonding layer 22 is a conductive layer bonded to a conductor for supplying power to the light emitting element 10. In this embodiment, the element bonding layer 22 is disposed between the light emitting element 10 and the metal film 50 and is a layer made of a single metal element. The element bonding layer 22 is disposed between the adhesion layer 21 and the metal film 50. The element bonding layer 22 may be, for example, a single layer made of Au. In this embodiment, the element bonding layer 22 is an Au film having a thickness of 0.3 μm or less.

[0032] The second electrode 40 is a conductive member disposed on the semiconductor stack 10S. The second electrode 40 is disposed on the back surface 10Sb of the semiconductor stack 10S. In the present embodiment, the second electrode 40 includes an ohmic electrode layer 41, an adhesion layer 42, and an element bonding layer 43.

[0033] The ohmic electrode layer 41 is an electrode in contact with the light-emitting element 10. The ohmic electrode layer 41 is in ohmic contact with the second semiconductor layer 14 of the semiconductor stack 10S. In the present embodiment, the ohmic electrode layer 41 is disposed on the upper surface of the ridge stripe 14R (i.e., the surface of the ridge stripe 14R that is located farthest from the substrate 11). The ohmic electrode layer 41 may be, for example, a single-layer film or a multi-layer film made of at least one of Pd and Ni. In the present embodiment, the ohmic electrode layer 41 is a Pd film having a thickness of 0.1 μm or less.

[0034] The adhesion layer 42 is a conductive layer disposed between the ohmic electrode layer 41 and the element bonding layer 43. The adhesion layer 42 may have a function of increasing the adhesion between the light emitting element 10 and the element bonding layer 43. The adhesion layer 42 may cover the ohmic electrode layer 41. In the present embodiment, the adhesion layer 42 may be a single layer film made of, for example, Ti, Cr, Pt, or Ni. In the present embodiment, the adhesion layer 42 is a Ti film having a thickness of 0.1 μm or less.

[0035] The element bonding layer 43 is a conductive layer bonded to a conductor for supplying power to the light-emitting element 10. The element bonding layer 43 may be a pad electrode having a pad-like shape. In this embodiment, the element bonding layer 43 is a layer made of a single metal element. The element bonding layer 43 may be a single-layer film made of Au, for example. In this embodiment, the element bonding layer 43 is an Au film having a thickness of 0.3 μm or less.

[0036] The base 70 is a base to which the light emitting element 10 is bonded. The base 70 has a first main surface 70a to which the light emitting element 10 is bonded and a second main surface 70b located on the back side of the first main surface. In this embodiment, the base 70 has a rectangular parallelepiped shape. The base 70 may be, for example, an electrically insulating ceramic substrate made of SiC, AlN, or the like, a high resistance semiconductor substrate such as undoped Si, a semiconductor substrate such as p-type Si or n-type Si on which a high resistance Si film is formed, or a SiO ２ Membrane, Si ３ N ４ From the viewpoint of heat dissipation, a silicon substrate having a thermal conductivity of 1000 W·m －１ ・K －１ Synthetic diamond having the above values ​​can also be used for the substrate 70. Also, single crystal SiC can be used for the substrate 70 if it has a sufficiently high electrical resistance. The substrate 70 may also be a composite such as Cu / AlN / Cu. In this embodiment, the substrate 70 is made of ceramic SiC.

[0037] The first main surface 70a of the base 70 has a light-emitting element bonding region 70r corresponding to the region where the light-emitting element 10 is bonded. The light-emitting element bonding region 70r according to the present embodiment is an example of a semiconductor laser element bonding region corresponding to the region where a semiconductor laser element is bonded. The light-emitting element bonding region 70r has the same shape as the shape of the light-emitting element 10 in a plan view of the first main surface 70a of the base 70. In the present embodiment, the light-emitting element bonding region 70r has a rectangular shape.

[0038] The base electrode 60 is a conductive member disposed between the metal film 50 and the base 70. The base electrode 60 is disposed on the first main surface 70a of the base 70. The base electrode 60 covers the light-emitting element bonding region 70r. The base electrode 60 has a base bonding layer 62. In the present embodiment, the base electrode 60 further has a base adhesion layer 61.

[0039] The base adhesion layer 61 is a conductive layer disposed between the base 70 and the base bonding layer 62. In this embodiment, the base adhesion layer 61 contacts the first main surface 70a of the base 70. The base adhesion layer 61 may have a function of increasing the adhesion between the first main surface 70a of the base 70 and the base bonding layer 62. The base adhesion layer 61 may be, for example, a single layer film made of Ti, Cr, or Ni. In this embodiment, the base adhesion layer 61 is a Ti film having a thickness of 0.1 μm or less.

[0040] The base bonding layer 62 is a conductive layer disposed between the metal film 50 and the base 70. In this embodiment, the base bonding layer 62 is a layer made of a single metal element. The base bonding layer 62 may be, for example, a single layer made of Au. In this embodiment, the base bonding layer 62 is an Au film having a thickness of 0.3 μm or less.

[0041] The relay electrode 71 is an electrode disposed on the base 70. The relay electrode 71 is electrically insulated from the base electrode 60. In the present embodiment, the relay electrode 71 is disposed on the first main surface 70a of the base 70. The relay electrode 71 may be used to relay a power supply path for supplying power to the second electrode 40. For example, a wire connected to a power source and a wire connected to the second electrode 40 may be bonded to the relay electrode 71. In the present embodiment, the relay electrode 71 has a base adhesion layer 72 and a base bonding layer 73. The relay electrode 71 may have the same layer structure as the base electrode 60. Furthermore, the relay electrode 71 may be formed simultaneously with the base electrode 60 in the same process.

[0042] The base adhesion layer 72 is a conductive layer disposed on the base 70. In this embodiment, the base adhesion layer 72 contacts the first main surface 70a of the base 70. The base adhesion layer 72 may have the same layer structure as the base adhesion layer 61 of the base electrode 60. The base adhesion layer 72 may also be formed simultaneously with the base adhesion layer 61 in the same process. The base adhesion layer 72 may be a single layer film made of, for example, Ti, Cr, or Ni. In this embodiment, the base adhesion layer 72 is a Ti film having a thickness of 0.1 μm or less.

[0043] The base bonding layer 73 is a conductive layer disposed on the base 70. In this embodiment, the base bonding layer 73 is a layer made of a single metal element disposed on the base adhesion layer 72. The base bonding layer 73 may have the same layer structure as the base bonding layer 62 of the base electrode 60. The base bonding layer 73 may also be formed simultaneously with the base bonding layer 62 in the same process. The base bonding layer 73 may be a single layer film made of Au, for example. In this embodiment, the base bonding layer 62 is an Au film having a thickness of 0.3 μm or less.

[0044] The metal film 50 is a film that is a sintered body of metal fine particles arranged on the first main surface 70a of the substrate 70. In this embodiment, the metal film 50 is a film formed by heating and sintering the metal fine particles. The metal film 50 may be a sintered body formed, for example, by heating a paste in which metal fine particles are dispersed in a solvent (organic solvent) to remove the solvent and sinter the metal fine particles. The metal fine particles are made of metals such as Au, Ag, Cu, and Al. Here, the sintered body refers to a solid powder aggregate that is heated at a temperature below its melting point, solidifying the solid powder aggregate and becoming a denser object than the original aggregate. The particle size of the metal fine particles measured with a scanning electron microscope before removing the solvent is 1 μm or less, and the average particle size calculated from the median value of the particle size distribution (median value (D50)) is, for example, 0.1 μm or more and 0.4 μm or less. Here, the particle size distribution is a value calculated, for example, by the intercept method using a cross-sectional image obtained with a scanning electron microscope. The metal particles melt when heated at a relatively low temperature of about 250°C and subjected to a relatively small load of 0.5 N or less, and the metal particles bond together (in other words, are sintered). The paste contains metal particles and a solvent, and may also contain a surfactant to improve the dispersibility of the metal particles. The solvent used in the paste is, for example, an ester alcohol (2,2,4-trimethyl-3-hydroxypentaisobutyrate: C １２ H ２４ O ３ ), terpineol, pine oil, butyl carbitol acetate, butyl carbitol, carbitol and other organic solvents.

[0045] The boiling point of the solvent may be 250° C. or lower, or may be 150° C. or higher and 230° C. or lower. When the boiling point of the solvent is in the range of 150° C. or higher and 230° C. or lower, the solvent can be prevented from being trapped between the sintered metal fine particles when the solvent is removed by heating.

[0046] The metal film 50, which is a sintered body formed in this manner, may be a porous film having voids. When observed in cross section, the porosity of the metal film 50 in terms of area ratio is, for example, less than 30%. This makes it possible to suppress a decrease in thermal conductivity due to voids in the metal film 50. Therefore, the heat dissipation performance of the light-emitting element 10 can be improved compared to when solder made of AuSn is used as the metal film 50. The porosity in terms of area ratio can be calculated, for example, as follows. In an electron microscope photograph using reflected electrons of the cross section, void areas are observed to have fewer reflected electrons and lower brightness. Therefore, areas in the electron microscope photograph where the brightness is below a certain value can be determined to be voids. Specifically, a histogram of the brightness of pixels within the measurement area can be calculated, and the percentage of areas below a certain value can be determined to be the porosity.

[0047] Furthermore, by intentionally making the metal film 50 a porous film having voids, thermal strain caused by the difference in thermal expansion coefficient between the light-emitting element 10 and the base 70 can be elastically absorbed by the metal film 50. The porosity of the metal film 50 in terms of area ratio may be, for example, 10% or more and less than 30%. This allows the metal film 50 to more reliably elastically absorb the thermal strain.

[0048] The porosity of the metal film 50 depends on the pressure applied to the metal film 50 during sintering. For example, in FIG. 1 , the highly packed portion 50 cmp of the metal film 50 sandwiched between the light emitting element 10 and the base 70 is compressed vertically between the light emitting element 10 and the base 70 during the sintering process due to heating. Therefore, the metal particles in the highly packed portion 50 cmp press against each other and become crushed. As a result, the gaps between the metal particles are filled, and a highly packed portion 50 cmp with a low porosity is formed.

[0049] On the other hand, the low filling portion of the metal film located outside the high filling portion 50 cmp is not subjected to direct pressure from the light emitting element 10 and the base 70. Therefore, the metal particles in the low filling portion form a sintered body without pressing against each other. As a result, the gaps between the metal particles are preserved, forming a low filling portion with a high porosity. In this embodiment, the low filling portion is the same portion as the extension portion 50e described below.

[0050] The voids in the metal film 50 function to locally block the heat dissipation path. Therefore, a low porosity is acceptable to enhance heat dissipation. Considering the heat dissipation path of the heat generated in the light-emitting element 10, the high-filling portion 50 cmp of the metal film 50 constitutes the main part of that heat dissipation path. Therefore, a sintering process may be carried out by applying pressure from above and below to the high-filling portion 50 cmp so that the porosity is as low as possible. As a result, the porosity of the high-filling portion 50 cmp is lower than that of the low-filling portion.

[0051] The metal film 50 may be made of a single metal element. This prevents alloy scattering of electrons and phonons in the metal film 50, thereby reducing the electrical resistance and thermal resistance of the metal film 50. The metal film 50 may be made of, for example, Au, Ag, Cu, or Al. These metals all have a thermal conductivity of 200 W·m －１ ・K －１ or higher. In other words, these metals are characterized by having particularly high thermal conductivity among metallic materials. In this embodiment, the metal film 50 is made of Au. The thickness of the metal film 50 is, for example, 3 μm or more. The melting point of the Au metal film 50 formed as a sintered body in this manner is close to the melting point of 1064°C of general bulk Au material. Therefore, when the light-emitting device 1 is joined to a mounting base such as a heat sink using solder, the metal film 50 does not melt even if heated to approximately 300°C to melt the solder. Therefore, in the light-emitting device 1, changes in the relative position and orientation of the light-emitting element 10 with respect to the base 70 can be suppressed when the light-emitting device 1 is mounted on the mounting base.

[0052] The metal film 50, the element bonding layer 22, and the base bonding layer 62 may be made of the same metal element, which can increase the bonding strength between the metal film 50 and the element bonding layer 22 and the base bonding layer 62.

[0053] The metal film 50 covers the light-emitting element bonding region 70r of the first main surface 70a of the base 70. In the present embodiment, the metal film 50 has an extension portion 50e that extends outside the light-emitting element bonding region 70r. By extending the metal film 50 to the outside of the light-emitting element bonding region 70r in this manner, it is possible to cover almost the entire surface of the light-emitting element 10 that faces the base 70 with the metal film 50. Therefore, the thermal resistance between the light-emitting element 10 and the base 70 can be reduced, thereby improving the heat dissipation properties of the light-emitting element 10.

[0054] The surface of the extension portion 50e has a convex shape. That is, the surface of the extension portion 50e protrudes outward. This ensures a heat dissipation path from the end of the surface of the light-emitting element 10 facing the base 70 to the outside of the light-emitting element bonding region 70r of the base 70, thereby improving the heat dissipation of the light-emitting element 10. In addition, in this embodiment, the extension portion 50e has a thick film portion 50et. In other words, the metal film 50 has a thick film portion 50et outside the light-emitting element bonding region 70r. The thickness of the thick film portion 50et is thicker than the thickness of the metal film 50 on the light-emitting element bonding region 70r. This further improves the heat dissipation of the light-emitting element 10. Furthermore, such a thick film portion 50et can block a portion of the leakage light (spontaneous emission light) from the side surface 10Sc of the semiconductor stack 10S or the substrate 11. The thick film portion 50et may be formed in part of the periphery of the light-emitting element 10. For example, the thick film portion 50et does not have to be disposed in a region facing the light emitting surface of the light emitting element 10 (i.e., one of the two surfaces of the surface of the light emitting element 10 that intersects with the longitudinal direction of the ridge stripe 14R). This makes it possible to prevent the light emitted from the light emitting element 10 from being blocked by the metal film 50.

[0055] In the present embodiment, the thick film portion 50et contacts the light emitting element 10, but the thick film portion 50et may be spaced apart from the light emitting element 10. This can prevent the extension portion 50e of the metal film 50 from contacting the pn junction of the semiconductor laminate 10S or the like.

[0056] [1-2. Manufacturing Method of Light-Emitting Device] An example of a manufacturing method of the light-emitting device 1 according to the present embodiment will be described with reference to FIGS. 2 to 7. Each of FIGS. 2 to 6 is a schematic diagram illustrating each step of the manufacturing method of the light-emitting device 1 according to the present embodiment. Each of FIGS. 2 to 6 includes a plan view (a) and a cross-sectional view (b). Each plan view (a) is a plan view of the first main surface 70Ma (or the first main surface 70a) of the base base material 70M (or the base 70), which will be described later. The cross-sectional views (b) of FIGS. 2, 3, 4, 5, and 6 show cross sections taken along line IIB-IIB in the plan view (a) of FIG. 2, line IIIB-IIIB in the plan view (a) of FIG. 3, line IVB-IVB in the plan view (a) of FIG. 4, line VB-VB in the plan view (a) of FIG. 5, and line VIB-VIB in the plan view (a) of FIG. 6, respectively. FIG. 7 is a graph showing an example of the relationship between time and heating temperature in the method for manufacturing the light-emitting device 1 according to the present embodiment.

[0057] As shown in Fig. 2, first, a base electrode 60 is formed on a first main surface 70Ma of a base base material 70M, which is the base material of the base 70. In this embodiment, a base adhesion layer 61 and a base bonding layer 62 are formed in this order on the first main surface 70Ma of the base base material 70M. The base electrode 60 is formed in a region of the first main surface 70Ma that includes a plurality of light-emitting element bonding regions 70r. In this embodiment, the relay electrode 71 is also formed simultaneously with the base electrode 60. The base electrode 60 and the relay electrode 71 are formed by, for example, photolithography, vapor deposition, or the like.

[0058] There are no particular limitations on the shape of the base electrode 60 and the first main surface 70Ma of the relay electrode 71 in a plan view. In the present embodiment, the shape of the base electrode 60 and the first main surface 70Ma of the relay electrode 71 in a plan view is rectangular.

[0059] The positions of the light-emitting element bonding regions 70r are not particularly limited. In this embodiment, the light-emitting element bonding regions 70r are arranged in a matrix. Each of the light-emitting element bonding regions 70r is an example of a semiconductor laser element bonding region.

[0060] Next, as shown in FIG. 3 , a paste 50P, in which metal particles are dispersed in a solvent, is applied to the first main surface 70Ma of the base material 70M (application process). More specifically, the paste 50P is applied to the light-emitting element bonding regions 70r of the first main surface 70Ma. In this embodiment, the paste 50P is patterned when it is applied in the application process. This reduces the amount of paste 50P used and the time required to manufacture the light-emitting device 1 compared to, for example, applying the paste 50P to the entire first main surface 70Ma and then patterning it. The application process may be performed using any method, including, for example, a transfer pin, silk screen printing, a dispenser method, or inkjet printing.

[0061] The viscosity of the paste 50P may be, for example, 10 Pa·s or more. This reduces the amount of solvent contained in the paste 50P, thereby suppressing deformation of the paste 50P when heated. Furthermore, the heating time required for sintering the paste 50P can be reduced.

[0062] In this embodiment, the plurality of pastes 50P are applied onto the plurality of base electrodes 60. The plurality of pastes 50P cover the plurality of light-emitting element bonding regions 70r, respectively.

[0063] Next, as shown in FIG. 4 , the plurality of light-emitting elements 10 are respectively arranged in the plurality of light-emitting element bonding regions 70r (arrangement process). In this embodiment, a first electrode 20 and a second electrode 40 are arranged on each of the plurality of light-emitting elements 10. The plurality of light-emitting elements 10 are arranged so that the first electrodes 20 arranged on the plurality of light-emitting elements 10 are in contact with the paste 50P. Before arranging the light-emitting elements 10 so that they are in contact with the paste 50P, the surface of the first electrode 20 may be subjected to ultraviolet irradiation or ozone cleaning to reduce attached organic matter. Furthermore, when arranging the light-emitting elements 10, a load of approximately 0 N to 5 N may be applied.

[0064] Next, the solvent is removed from the paste 50P, and the metal particles are sintered to form a composite metal film (composite metal film formation process). In this embodiment, as an example of a composite metal film, a plurality of patterned metal films 50 are formed. Accordingly, the light emitting element 10 can be bonded to the base 70 by the metal films 50. Note that the configuration of the composite metal film is not limited to this. The composite metal film may be a single porous film formed over the entire first main surface 70Ma of the base base material 70M, or a non-porous film.

[0065] Here, the heating temperature in the composite metal film forming process will be described with reference to Fig. 7. The composite metal film forming process starts at time t0 shown in Fig. 7. At time t0, the plurality of light-emitting elements 10 are respectively arranged in the plurality of light-emitting element bonding regions 70r.

[0066] Heating begins at time t0. Specifically, for example, the substrate base material 70M is placed in a baking furnace and heated. At time t0, the temperature of the baking furnace is approximately room temperature.

[0067] Next, the temperature is maintained constant from time t1 when the temperature of the bake furnace reaches T1 to time t2. This removes the solvent. The temperature may be controlled based on the temperature of the bake furnace, or may be controlled based on the temperatures of the base material 70M, the paste 50P, etc. The temperature T1 may be determined appropriately based on the characteristics of the solvent contained in the paste 50P, etc. The temperature T1 is, for example, about 150°C. The time for maintaining the temperature T1 is, for example, about 10 minutes.

[0068] Next, from time t2, the temperature of the bake furnace is further increased over a period of about 10 minutes, and the temperature is maintained constant from time t3, when the temperature reaches temperature T2 (> T1), until time t4. Temperature T2 may be determined appropriately based on the characteristics of the metal microparticles, for example. Temperature T2 is, for example, about 200°C. The time for maintaining temperature T2 is, for example, about 30 minutes. This melts the surfaces of the metal microparticles. To further promote melting and improve the bonding strength, the maintenance time is set to about 60 minutes. Note that if a load is applied to the bonding surface between time t3 and time t4, the bonding strength will be further increased.

[0069] Next, heating is stopped (or cooling is started) at time t4, and the temperature of the baking furnace is lowered over a period of about 60 minutes. The composite metal film formation process is completed at time t5, when the temperature of the baking furnace has reached room temperature. In this way, by lowering the temperature of the baking furnace and lowering the temperature of the metal microparticles, the metal microparticles can be sintered. As a result, multiple metal films 50, which are sintered bodies of metal microparticles, can be formed, as shown in FIG. 5.

[0070] Next, the base material 70M is divided into a plurality of light-emitting devices 1 (division step). In the present embodiment, at the start of the division step, as described above, the composite metal film includes a plurality of metal films 50. The plurality of metal films 50 respectively cover a plurality of light-emitting element bonding regions 70r.

[0071] The dividing step according to the present embodiment includes a scribing step of forming a scribe line between two adjacent light-emitting element bonding regions 70r among the plurality of light-emitting element bonding regions 70r, as shown by the thick dashed line in Fig. 5. After the scribing step, the base material 70M is divided along the scribe line to form a plurality of light-emitting devices 1, as shown in Fig. 6.

[0072] The light-emitting device 1 can be manufactured as described above. The plurality of light-emitting devices 1 manufactured by the above manufacturing method each include a plurality of light-emitting element bonding regions 70r. Each of the plurality of light-emitting devices 1 according to this embodiment is an example of a submount for a light-emitting element. The dividing step according to this embodiment is also an example of a process for dividing the base base material 70M to obtain a plurality of submounts for a light-emitting element. Furthermore, each of the plurality of submounts for a light-emitting element according to this embodiment is also an example of a submount for a semiconductor laser element to which a semiconductor laser element is bonded.

[0073] As described above, when manufacturing a light-emitting device 1 including a metal film 50 made of a sintered body of metal particles, it takes approximately 100 to 200 minutes to form the metal film 50. This required time is significantly longer than the time (several seconds) required when using solder made of AuSn as a bonding material. Therefore, using such a metal film 50 presents a problem of poor productivity. However, according to the manufacturing method of the light-emitting device 1 of this embodiment, multiple metal films 50 are formed on the base material 70M, and multiple light-emitting elements 10 are bonded to each of the multiple metal films 50, thereby enabling multiple light-emitting devices 1 to be manufactured simultaneously. Therefore, by manufacturing a large number of light-emitting devices 1 simultaneously, the productivity of the light-emitting devices 1 can be significantly improved.

[0074] 6 , the first main surface 70a of the base 70 has a first edge 70ae, which is one longitudinal edge of the light-emitting element bonding region 70r, and a second edge 70ae2 perpendicular to the first edge 70ae. The base 70 has a first side surface 70e connected to the first main surface 70a at the first edge 70ae, and a second side surface 70s connected to the first main surface 70a at the second edge 70ae2. The distance D1 between the first edge 70ae and the metal film 50 may be smaller than the distance D2 between the second edge 70ae2 and the metal film 50. This allows the light emission surface of the light-emitting element 10 to be located near the first edge 70ae, thereby reducing the possibility of the base 70 blocking light emitted from the light-emitting element 10.

[0075] It should be noted that the manufacturing method of the light-emitting device 1 according to the present embodiment is not limited to the above-described method. For example, in the composite metal film formation step, a heating mode other than the heating mode shown in Fig. 7 may be used. Hereinafter, another heating mode in the composite metal film formation step will be described with reference to Fig. 8. Fig. 8 is a graph showing another example of the relationship between time and heating temperature in the manufacturing method of the light-emitting device 1 according to the present embodiment.

[0076] In the heating mode shown in Fig. 8, heating starts at time t0. In the example shown in Fig. 8, the light emitting element 10 is not yet placed on the paste 50P at this time. At time t0, the temperature of the baking furnace is approximately room temperature.

[0077] Next, the temperature of the baking furnace is maintained constant from time t1 when the temperature of the baking furnace reaches T1 to time t2. This removes the solvent. The temperature T1 is, for example, about 150°C. The time for maintaining the temperature T1 is, for example, about 10 minutes.

[0078] Next, heating is stopped (or cooling is started) at time t2 to lower the temperature of the bake furnace. The temperature of the bake furnace is maintained at room temperature from time t3, when the temperature of the bake furnace has reached room temperature, until time t4. During this period from time t3 to time t4, the light emitting element 10 is placed on the paste 50P. A load of approximately 0.1 N or more and 5 N or less may be applied when placing the light emitting element 10.

[0079] Next, heating is started again at time t4, and the baking furnace is heated to temperature T2 over a period of about 20 minutes. The temperature is maintained constant from time t5, when the temperature of the baking furnace reaches temperature T2, to time t6. Temperature T2 is, for example, about 200°C. The time for maintaining temperature T2 is, for example, about 30 minutes.

[0080] Subsequently, at time t6, heating is stopped (or cooling is started) to lower the temperature of the baking furnace. At time t7, when the temperature of the baking furnace has returned to approximately room temperature, the composite metal film forming process is completed.

[0081] The light-emitting device 1 according to the present embodiment can also be manufactured using the heating method described above. In the heating method shown in FIG. 8, the light-emitting element 10 is placed in the paste 50P from which the solvent has been removed, so the change in shape of the paste 50P due to the placement of the light-emitting element 10 is small. Therefore, this heating method can suppress changes in the position and posture of the light-emitting element 10 during bonding. Applying a load to the bonding surface between time t5 and time t6 further increases the bonding strength.

[0082] The component including the substrate base material 70M and the composite metal film (plurality of metal films 50) obtained by the above-mentioned composite metal film formation process is an example of an aggregate submount for a light-emitting element, and also an example of an aggregate submount for a semiconductor laser element.

[0083] Furthermore, the configuration of the dividing step is not particularly limited. For example, a scribing step included in the dividing step may form a scribe line inside the base material 70M. Such a scribing step and the light-emitting device 1 formed by this step will be described below with reference to Figures 9 and 10. Figures 9 and 10 are schematic diagrams showing an example of the dividing step according to this embodiment.

[0084] As shown in FIG. 9, in the scribing step, an altered portion 70F is formed inside the base base material 70M by using a laser beam, thereby forming a scribe line inside the base base material 70M.

[0085] 10 , the base base material 70M is divided at the altered portion 70F by pulling the base base material 70M along the first main surface 70Ma, thereby manufacturing the light-emitting device 1. By using such a dividing step, it is possible to suppress the generation of debris during the dividing step.

[0086] The structure of the light-emitting device 1 formed by this dividing process will be described. As described above, in this dividing process, the scribe lines are formed by the altered portions 70F. As a result, unevenness due to the formation of the altered portions 70F is formed on each side surface of the base 70, which corresponds to the dividing surface of the base base material 70M. Specifically, the surface roughness (e.g., arithmetic mean roughness Ra) is large in the region including the center of each side surface. On the other hand, the altered portions 70F are not formed on the first main surface 70Ma of the base base material 70M. As a result, the surface roughness is not uniform on each side surface of the base 70 (the surface of the base 70 connecting the first main surface 70a and the second main surface 70b). For example, the base 70 has a first side surface 70e and a second side surface 70s. The first side surface 70e is a side surface that intersects with the longitudinal direction of the light-emitting element bonding region. In other words, the first side surface 70e is a side surface that connects to the first main surface 70a at the first edge 70ae. The second side surface 70s is a side surface that connects to the first main surface 70a at a second edge 70ae2 that is perpendicular to the first edge 70ae.

[0087] The first side surface 70e has a large surface roughness in a region including the center of the first side surface 70e, and a region closer to the first main surface 70a than the center of the first side surface 70e has a small surface roughness compared to the center of the first side surface 70e. Increasing the surface roughness in the region including the center of the first side surface 70e of the base 70 in this way can increase the surface area of ​​the first side surface 70e. Therefore, the heat dissipation properties of the base 70 can be improved.

[0088] [1-3. Modifications 1 and 2] Light-emitting devices according to Modifications 1 and 2 of this embodiment will be described. In the example shown in light-emitting device 1 in FIG. 1, the extension portion 50e of the metal film 50 has a thick film portion 50et, but the configuration of the metal film is not limited to this. Hereinafter, as light-emitting devices according to modifications of this embodiment, light-emitting devices that differ from light-emitting device 1 in the configuration of the metal film will be described with reference to FIGS. 11 and 12. FIGS. 11 and 12 are schematic cross-sectional views showing the overall configurations of light-emitting devices according to Modifications 1 and 2 of this embodiment, respectively.

[0089] A light emitting device 1a according to Modification 1 shown in FIG. 11 differs from the light emitting device 1 according to Embodiment 1 in that it has a metal film 50a instead of the metal film 50, but is the same in other respects.

[0090] The metal film 50a has an extension 50ae that extends outside the light-emitting element bonding region 70r, similar to the metal film 50, and the surface of the extension 50ae has a convex shape. The metal film 50a does not have a thick film portion.

[0091] By including such a metal film 50a, the light emitting device 1a can prevent the metal film 50a from coming into contact with the pn junction.

[0092] A light emitting device 1b according to Modification 2 shown in FIG. 12 differs from the light emitting device 1 according to Embodiment 1 in that it has a metal film 50b instead of the metal film 50, but is the same in other respects.

[0093] The metal film 50b has an extension 50be that extends outside the light-emitting element junction region 70r, similar to the metal film 50. The surface of the extension 50be has a concave shape.

[0094] By including such a metal film 50b, the light emitting device 1b can prevent the metal film 50b from coming into contact with the pn junction.

[0095] The shape of each of the metal films varies depending on, for example, the method of mounting the light-emitting element 10 on the paste 50P, the sintering method, the paste material, etc. For example, the metal film 50 according to the first embodiment can be realized by using a paste 50P with a relatively high viscosity, pressing the light-emitting element 10 against the base material 70M with a load of 0.1 N to 5 N when mounting the light-emitting element 10 on the paste 50P, and then sintering the light-emitting element 10. The metal film 50a according to the first modification can be realized by using a paste 50P with a relatively low viscosity and employing the heating method described with reference to FIG. 8. The metal film 50b according to the second modification can be realized by using a paste 50P having a solvent that has high wettability with respect to the base bonding layer 62, and reducing the load of the light-emitting element 10 against the base material 70M to approximately 0 N to 0.3 N when mounting the light-emitting element 10 on the paste 50P.

[0096] [1-4. Modification 3] A light-emitting device according to Modification 3 of the present embodiment will be described. The light-emitting device according to this modification differs from the light-emitting device 1 according to the present embodiment in the configuration of the electrodes arranged on the base 70, but is the same in other configurations. The light-emitting device according to this modification will be described below with reference to FIG. 13. FIG. 13 is a schematic diagram showing the configuration of a light-emitting device 1c according to this modification. FIG. 13 shows a plan view (a) and a cross-sectional view (b). The plan view (a) is a plan view of the first main surface 70a of the base 70 as seen in a plan view. The cross-sectional view (b) of FIG. 13 shows a cross section taken along line XIIIB-XIIIB shown in the plan view (a) of FIG. 13.

[0097] 13 , the light-emitting device 1c according to this modification differs from the light-emitting device 1 according to the present embodiment in that it does not include the relay electrode 71. The light-emitting device 1c according to this modification also achieves the same effects as the light-emitting device 1 according to the present embodiment.

[0098] [1-5. Effects, etc.] As described above, the light-emitting device 1 according to the present embodiment includes the base 70 having the first main surface 70 a, the metal film 50 which is a sintered body of metal fine particles and is disposed on the first main surface 70 a, and the light-emitting element 10 which is bonded to the metal film 50.

[0099] The metal film 50 used in such a light-emitting device 1 can have a higher melting point than AuSn or the like, and therefore can prevent the metal film 50 from melting when the light-emitting device 1 is mounted on a mounting base such as a heat sink using solder made of AuSn or the like. Therefore, changes in the position and attitude of the light-emitting element 10 relative to the base 70 can be prevented when the light-emitting device 1 is mounted on the mounting base.

[0100] In the light-emitting device 1, the light-emitting element 10 may be a semiconductor laser element.

[0101] In the light-emitting device 1, the metal film 50 has a thick film portion 50et on the outside of the light-emitting element 10, and the thick film portion 50et is formed in a part of the periphery of the light-emitting element 10, and the thickness of the thick film portion 50et may be thicker than the thickness of the metal film 50 between the light-emitting element 10 and the first main surface 70a.

[0102] This ensures a heat dissipation path from the end of the surface of the light-emitting element 10 facing the base 70 to the outside of the light-emitting element bonding region 70r of the base 70, thereby improving the heat dissipation properties of the light-emitting element 10.

[0103] In the light-emitting device 1, the thick film portion 50et and the light-emitting element 10 may be spaced apart.

[0104] This can prevent the extending portion 50e of the metal film 50 from coming into contact with the pn junction of the semiconductor laminate 10S.

[0105] In the light-emitting device 1 , the thick film portion 50 et does not have to be disposed in the region facing the light-emitting surface of the light-emitting element 10 .

[0106] This can prevent the light emitted from the light emitting element 10 from being blocked by the metal film 50 .

[0107] The submount for a semiconductor laser device according to this embodiment includes a base 70 having a first main surface 70a, and a metal film 50, which is a sintered body of metal fine particles and is disposed on the first main surface 70a. The first main surface 70a has a semiconductor laser device bonding region, which corresponds to a region where an edge-emitting semiconductor laser device is bonded. The metal film 50 covers the semiconductor laser device bonding region.

[0108] The metal film 50, which is a sintered body of metal particles, can have a higher melting point than AuSn, etc. Therefore, in a semiconductor laser device in which a semiconductor laser element is bonded to the metal film 50 of a submount for a semiconductor laser element, melting of the metal film 50 can be suppressed when mounting the semiconductor laser element on a mounting base such as a heat sink using solder made of AuSn, etc. Therefore, changes in the relative position and attitude of the semiconductor laser element with respect to the base 70 can be suppressed when mounting the semiconductor laser device on the mounting base.

[0109] In the submount for a semiconductor laser element according to this embodiment, the first main surface 70a has a first edge 70ae parallel to the light emission surface of the semiconductor laser element and a second edge 70ae2 perpendicular to the first edge 70ae, and the distance between the first edge 70ae and the metal film 50 may be smaller than the distance between the second edge 70ae2 and the metal film 50.

[0110] This allows the light emission surface of the semiconductor laser element to be disposed near the first edge 70 ae, thereby reducing the possibility that the emitted light from the semiconductor laser element is blocked by the base 70 .

[0111] In the submount for a semiconductor laser element according to this embodiment, the base 70 has a first side surface 70e parallel to the light emission surface of the semiconductor laser element, and the first side surface 70e may have a region having a smaller surface roughness than the center of the first side surface 70e in a region closer to the first main surface 70a than the center of the first side surface 70e.

[0112] In this way, by increasing the surface roughness in the region including the center of the first side surface 70e of the base 70, it is possible to increase the surface area of ​​the base 70. Therefore, it is possible to improve the heat dissipation properties of the submount for a semiconductor laser device.

[0113] In the submount for a semiconductor laser device according to this embodiment, the metal film 50 may have a thick film portion 50et outside the semiconductor laser device bonding region. The thickness of the thick film portion 50et may be thicker than the thickness of the metal film 50 on the semiconductor laser device bonding region.

[0114] In this way, the metal film 50 has the thick film portion 50et, which ensures a heat dissipation path from the end of the surface of the semiconductor laser element facing the base 70 to the outside of the light emitting element bonding region 70r of the base 70, thereby improving the heat dissipation performance of the semiconductor laser element. In addition, such thick film portion 50et can block part of the leaked light from the semiconductor laser element.

[0115] The method for manufacturing a submount for a light-emitting element in this embodiment includes a coating process of coating a first main surface 70Ma of a base material 70M with a paste 50P in which metal particles are dispersed in a solvent; a composite metal film formation process of removing the solvent from the paste 50P and sintering the metal particles to form a composite metal film (plurality of metal films 50); and a division process of dividing the base material 70M after the composite metal film formation process to form plural submounts for light-emitting elements.

[0116] The composite metal film, which is a sintered body of metal particles, can have a higher melting point than AuSn and the like. Therefore, in a light-emitting device 1 in which a light-emitting element 10 is bonded to the composite metal film of a light-emitting element submount, melting of the metal film 50 can be suppressed when the light-emitting element 10 is mounted on a mounting base such as a heat sink using solder made of AuSn. Therefore, changes in the relative position and orientation of the light-emitting element 10 with respect to the base 70 can be suppressed when the light-emitting device 1 is mounted on the mounting base. Furthermore, because the heating temperature for sintering the metal film 50 is relatively low, damage to the light-emitting element 10 due to heating can be reduced.

[0117] Furthermore, when metal film 50, which is a sintered body of metal fine particles, is used as the joining member, the time required for joining is longer than when solder made of AuSn is used as the joining member. However, according to the method for manufacturing a submount for a light-emitting element according to the present embodiment, multiple submounts for a light-emitting element can be manufactured simultaneously, thereby increasing the productivity of submounts for light-emitting elements.

[0118] In the method for manufacturing a submount for a light-emitting element according to the present embodiment, each of the plurality of submounts for a light-emitting element may be a submount for a semiconductor laser element to which a semiconductor laser element is bonded.

[0119] In the method for manufacturing a submount for light-emitting element according to the present embodiment, the first main surface 70a includes a plurality of light-emitting element bonding regions 70r, and the plurality of light-emitting element bonding regions 70r respectively correspond to regions where a plurality of light-emitting elements 10 are bonded. At the start of the dividing step, the composite metal film includes a plurality of patterned metal films 50. The plurality of metal films 50 may each cover a plurality of light-emitting element bonding regions 70r, and the plurality of light-emitting element submounts may each include a plurality of light-emitting element bonding regions 70r.

[0120] As a result, each of the plurality of light-emitting element submounts has a light-emitting element bonding region 70r and a metal film 50 covering it. Therefore, the light-emitting element 10 can be bonded to the base 70 by the metal film 50 of each light-emitting element submount.

[0121] In the application step of the method for manufacturing a submount for a light-emitting element according to the present embodiment, paste 50P may be patterned when it is applied.

[0122] This allows the amount of paste 50P used and the time required to manufacture the light emitting device 1 to be reduced compared to, for example, applying the paste 50P to the entire first main surface 70Ma and then patterning it.

[0123] In the method for manufacturing a submount for a light-emitting element according to this embodiment, the dividing step may include a scribing step of forming a scribe line between two adjacent light-emitting element bonding regions 70r among the plurality of light-emitting element bonding regions 70r.

[0124] This allows the base material 70M to be divided along the scribe lines.

[0125] In the scribing step of the method for manufacturing a submount for a light-emitting element according to this embodiment, a scribe line may be formed inside base base material 70M by forming altered portion 70F inside base base material 70M using laser light.

[0126] This makes it possible to suppress the generation of debris during the dividing step. Furthermore, the surface roughness of the side surface of the base body 70 can be increased, thereby increasing the surface area of ​​the base body 70. Therefore, the heat dissipation properties of the base body 70 can be improved.

[0127] The manufacturing method of the light-emitting device 1 according to this embodiment includes a coating process of applying a paste 50P having metal microparticles dispersed in a solvent to a plurality of light-emitting element bonding regions 70r on the first main surface 70Ma of the base material 70M, a placement process of arranging a plurality of light-emitting elements 10 in the plurality of light-emitting element bonding regions 70r, respectively, a composite metal film formation process of removing the solvent from the paste 50P and sintering the metal microparticles to form a composite metal film (a plurality of metal films 50), and a division process of dividing the base material 70M after the composite metal film formation process to form a plurality of light-emitting devices.

[0128] The composite metal film, which is a sintered body of metal particles, can have a higher melting point than solder made of AuSn, etc. Therefore, in the light-emitting device 1, melting of the metal film 50 can be suppressed when mounting the light-emitting device 1 on a mounting base such as a heat sink using solder made of AuSn, etc. Therefore, changes in the relative position and posture of the light-emitting element 10 with respect to the base 70 can be suppressed when mounting the light-emitting device 1 on the mounting base. Furthermore, because the heating temperature for sintering the metal film 50 is relatively low, damage to the light-emitting element 10 due to heating can be reduced.

[0129] Furthermore, similar to the method for manufacturing the submount for the light-emitting element described above, the method for manufacturing the light-emitting device 1 according to this embodiment allows multiple light-emitting devices 1 to be manufactured simultaneously, thereby increasing the productivity of the light-emitting device 1.

[0130] In the method for manufacturing the light emitting device 1 according to the present embodiment, each of the plurality of light emitting elements 10 may be a semiconductor laser element.

[0131] In the manufacturing method of the light emitting device 1 according to the present embodiment, the first main surface 70Ma includes a plurality of light emitting element bonding regions 70r, and the plurality of light emitting element bonding regions 70r respectively correspond to regions to which the plurality of light emitting elements 10 are bonded. At the start of the dividing step, the composite metal film may include a plurality of patterned metal films 50, and the plurality of light emitting devices 1 may each include a plurality of light emitting element bonding regions 70r.

[0132] As a result, each of the plurality of light emitting devices 1 includes a light emitting element junction region 70r, a metal film 50 covering the light emitting element junction region 70r, and a light emitting element 10 disposed on the light emitting element junction region 70r.

[0133] (Embodiment 2) A light-emitting device according to embodiment 2 and a manufacturing method thereof will be described. The light-emitting device according to this embodiment differs from the light-emitting device 1 according to embodiment 1 mainly in that the light-emitting element 10 is junction-down mounted on the base 70. The light-emitting device according to this embodiment will be described below, focusing on the differences from embodiment 1.

[0134] [2-1. Overall Configuration of Light-Emitting Device] The overall configuration of the light-emitting device according to the present embodiment will be described with reference to FIG. 14 . FIG. 14 is a cross-sectional view showing the overall configuration of a light-emitting device 101 according to the present embodiment. FIG. 14 shows a cross section perpendicular to the propagation direction of light emitted by the light-emitting device 101. As shown in FIG. 14 , the light-emitting device 101 includes a light-emitting element 10, a base 70, and a metal film 50. In this embodiment, the light-emitting device 101 further includes a base electrode 60, a relay electrode 71, a first electrode 20, and a second electrode 40. The light-emitting device 101 is also an example of a submount for a light-emitting element that includes the base 70 and the metal film 50. In this embodiment, the light-emitting element 10 is a semiconductor laser element, as in the first embodiment. Therefore, the light-emitting device 101 is both an example of a semiconductor laser device and an example of a submount for a semiconductor laser element.

[0135] The light-emitting element 10 according to this embodiment may be, for example, a semiconductor laser element that emits blue laser light. In this case, for example, the length (in the resonance direction) of the light-emitting element 10 may be about 1.2 mm, the width may be about 150 μm, and the thickness may be about 100 μm. The light-emitting element 10 according to this embodiment may also be a semiconductor laser element that emits infrared laser light. In this case, for example, the length (in the resonance direction) of the light-emitting element 10 may be about 2.8 mm, the width may be about 300 μm, and the thickness may be about 100 μm.

[0136] In the light-emitting device 101 according to the present embodiment, the light-emitting element 10 is mounted in a junction-down manner. That is, the second electrode 40 disposed on the semiconductor laminate 10S is joined to the base 70 via a metal film 50 or the like. This reduces the thermal resistance between the semiconductor laminate 10S, which is the main heat source of the light-emitting element 10, and the base 70, thereby improving the heat dissipation of the light-emitting element 10.

[0137] Similar to the metal film 50 according to the first embodiment, the metal film 50 according to the present embodiment has an extension 50e extending outside the light-emitting element junction region 70r. The surface of the extension 50e has a convex shape. In the present embodiment, the extension 50e also has a thick film portion 50et. In the present embodiment, the thick film portion 50et and the light-emitting element 10 are spaced apart from each other. This prevents the extension 50e of the metal film 50 from coming into contact with the pn junction of the semiconductor laminate 10S.

[0138] [2-2. Manufacturing Method of Light-Emitting Device] An example of a manufacturing method of the light-emitting device 101 according to the present embodiment will be described with reference to FIGS. 15 to 18. Each of FIGS. 15 to 18 is a schematic diagram showing each step of the manufacturing method of the light-emitting device 101 according to the present embodiment. Each of FIGS. 15 to 18 includes a plan view (a) and a cross-sectional view (b). Each plan view (a) is a plan view of the first main surface 70Ma (or the first main surface 70a) of the base base material 70M (or the base 70). The cross-sectional views (b) of Figures 15, 16, 17, and 18 respectively show cross sections taken along line XVB-XVB shown in the plan view (a) of Figure 15, line XVIB-XVIB shown in the plan view (a) of Figure 16, line XVIIB-XVIIB shown in the plan view (a) of Figure 17, and line XVIIIB-XVIIIB shown in the plan view (a) of Figure 18.

[0139] 15 , similar to the first embodiment, a base electrode 60 and a relay electrode 71 are formed on a first main surface 70Ma of a base base material 70M, which is the base material of the base 70. Furthermore, a paste 50P is applied to a plurality of light-emitting element bonding regions 70r on the first main surface 70Ma (application process). The base electrode 60 is formed in a region including the plurality of light-emitting element bonding regions 70r on the first main surface 70Ma. The paste 50P is applied onto the base electrode 60.

[0140] In this embodiment, the plurality of light-emitting element bonding regions 70r are arranged in a row along the linear first edge 70Mae of the first main surface 70Ma. The longitudinal direction of each of the plurality of light-emitting element bonding regions 70r is a direction intersecting the first edge 70Mae. The plurality of light-emitting element bonding regions 70r may be arranged at a position that includes the first edge 70Mae. Each of the plurality of light-emitting element bonding regions 70r is an example of a semiconductor laser element bonding region.

[0141] Next, as shown in FIG. 16 , the plurality of light-emitting elements 10 are respectively arranged in the plurality of light-emitting element bonding regions 70r (arrangement process). In this embodiment, a first electrode 20 and a second electrode 40 are arranged on each of the plurality of light-emitting elements 10. The plurality of light-emitting elements 10 are arranged so that the second electrodes 40 arranged on the plurality of light-emitting elements 10 contact the paste 50P. Each of the plurality of light-emitting elements 10 according to this embodiment is an edge-emitting semiconductor laser element. In the arrangement process, the plurality of light-emitting elements 10 are arranged so that, in a plan view of the first main surface 70Ma, the light-emitting surface 10F of each of the plurality of light-emitting elements 10 protrudes outward from the first edge 70Mae of the first main surface 70Ma. Here, the protrusion length of the light-emitting surface 10F is 5 μm or more and 20 μm or less. The protrusion length may be appropriately adjusted within a range of 2 μm or more and 50 μm or less depending on the length of the light-emitting element. In this way, in a plan view of the first main surface 70Ma, the light emitting surface 10F is disposed outside the first main surface 70Ma. This makes it possible to prevent the light emitted from the plurality of light emitting elements 10 from being blocked by the base 70. In this embodiment, the light emitting elements 10 are junction-down mounted, so the distance between the base 70 and the active layer 13 is small. For this reason, the above-described arrangement is particularly effective.

[0142] 17, the solvent is removed from the paste 50P, and the metal particles are sintered to form a composite metal film (composite metal film formation process). In this embodiment, a plurality of patterned metal films 50 are formed as an example of a composite metal film. Accordingly, the light emitting element 10 can be bonded to the base 70 by the metal films 50.

[0143] A component including a substrate base material 70M and a composite metal film (plurality of metal films 50) obtained by such a composite metal film formation process is an example of an aggregate submount for a light-emitting element, and also an example of an aggregate submount for a semiconductor laser element.

[0144] Next, the base material 70M is divided into a plurality of light-emitting devices 101 (division step). In the present embodiment, at the start of the division step, as described above, the composite metal film includes a plurality of metal films 50. The plurality of metal films 50 respectively cover a plurality of light-emitting element bonding regions 70r.

[0145] The dividing step according to the present embodiment includes a scribing step of forming a scribe line between two adjacent light-emitting element bonding regions 70r among the plurality of light-emitting element bonding regions 70r, as shown by the thick dashed line in Fig. 17. After the scribing step, the base material 70M is divided along the scribe line to form a plurality of light-emitting devices 101, as shown in Fig. 18.

[0146] In this embodiment, it is possible to avoid arranging the light emitting elements 10 on the scribe lines, and therefore it is possible to prevent the light emitting elements 10 from being damaged in the dividing step.

[0147] In this embodiment, too, in the scribing step, a laser beam may be used to form an altered portion 70F inside the base material 70M, thereby forming a scribe line inside the base material 70M. In this case, as in the first embodiment, the divided base 70 has a first side surface 70e and a second side surface 70s. The first side surface 70e has a large surface roughness in a region including the center of the first side surface 70e, and a region closer to the first main surface 70a than the center of the first side surface 70e has a small surface roughness compared to the center of the first side surface 70e. In this way, by increasing the surface roughness in a region including the center of the first side surface 70e of the base 70, the surface area of ​​the first side surface 70e can be increased. Therefore, the heat dissipation properties of the base 70 can be improved.

[0148] The light-emitting device 101 can be manufactured as described above. The plurality of light-emitting devices 101 manufactured by the above manufacturing method each include a plurality of light-emitting element bonding regions 70r. Each of the plurality of light-emitting devices 101 according to this embodiment is an example of a submount for a light-emitting element. The dividing step according to this embodiment is also an example of a step of dividing the base base material 70M to obtain a plurality of submounts for a light-emitting element. Furthermore, each of the plurality of submounts for a light-emitting element according to this embodiment is also an example of a submount for a semiconductor laser element to which a semiconductor laser element is bonded.

[0149] In the present embodiment, the light emitting elements 10 are arranged such that the light emitting surfaces 10F of the light emitting elements 10 protrude from the first edges 70ae of the first main surface 70a to the outside of the first main surface 70a in a plan view of the first main surface 70a. This makes it possible to prevent the emitted light from the plurality of light emitting elements 10 from being blocked by the base 70.

[0150] Furthermore, the manufacturing method of the light-emitting device 101 according to the present embodiment is not limited to the above manufacturing method. Below, modified examples of the manufacturing method of the light-emitting device 101 will be described with reference to FIGS. 19 to 22. Each of FIGS. 19 to 22 is a schematic diagram showing each step of a modified example of the manufacturing method of the light-emitting device 101 according to the present embodiment. Each of FIGS. 19 to 22 shows a plan view (a) and a cross-sectional view (b). Each plan view (a) is a plan view of the first main surface 70Ma (or the first main surface 70a) of the base base material 70M (or the base 70). The cross-sectional views (b) of Figures 19, 20, 21, and 22 respectively show cross sections along line XIXB-XIXB shown in the plan view (a) of Figure 19, line XXB-XXB shown in the plan view (a) of Figure 20, line XXIB-XXIB shown in the plan view (a) of Figure 21, and line XXIIB-XXIIB shown in the plan view (a) of Figure 22.

[0151] 19 , a base electrode 60 and a relay electrode 71 are formed on a first main surface 70Ma of a base base material 70M, which is the base material of the base 70. Furthermore, a paste 50P is applied to a plurality of light-emitting element bonding regions on the first main surface 70Ma (application process). The base electrode 60 is formed in a region including a plurality of light-emitting element bonding regions 70r on the first main surface 70Ma. The paste 50P is applied onto the base electrode 60.

[0152] In this modification, the plurality of light-emitting element bonding regions 70r are arranged in two rows along two opposing linear first edges 70Mae of the first main surface 70Ma. The two first edges 70Mae may be parallel. In other words, the plurality of light-emitting element bonding regions are arranged in a matrix of 2 rows and n columns, where n is an integer greater than or equal to 2. The longitudinal direction of each of the plurality of light-emitting element bonding regions 70r intersects with the first edges 70Mae. The plurality of light-emitting element bonding regions 70r may be arranged at a position that includes the first edges 70Mae.

[0153] 20 , the plurality of light-emitting elements 10 are respectively arranged in the plurality of light-emitting element bonding regions 70r (arrangement step). In the arrangement step, the plurality of light-emitting elements 10 are arranged such that the light emission surfaces 10F of the plurality of light-emitting elements 10 protrude outward from the two first edges 70Mae of the first main surface 70Ma in a plan view of the first main surface 70Ma.

[0154] 21 , the solvent is removed from the paste 50P, and the metal particles are sintered to form a composite metal film (composite metal film formation process). In this modification, a plurality of patterned metal films 50 are formed as an example of a composite metal film. Accordingly, the light emitting element 10 can be bonded to the base 70 by the metal films 50.

[0155] Next, the base base material 70M is divided into a plurality of light emitting devices 101 as shown in FIG. 22 (dividing step).

[0156] The light emitting device 101 can also be manufactured using the modified method for manufacturing the light emitting device 101 as described above.

[0157] [2-3. Effects, etc.] As described above, the light-emitting device 101 according to the present embodiment is an example of a semiconductor laser device, and includes the base 70 having the first main surface 70 a, the metal film 50 which is a sintered body of metal fine particles and is disposed on the first main surface 70 a, and the light-emitting element 10 which is a semiconductor laser element bonded to the metal film 50.

[0158] As a result, similar to the light emitting device 1 according to the first embodiment, changes in the relative position and posture of the light emitting element 10 with respect to the base 70 can be suppressed when the light emitting device 101 is mounted on a mounting base.

[0159] Furthermore, in the light-emitting device 101 according to this embodiment, the light-emitting element 10 is arranged so that, when viewed in plan from the first main surface 70a, the light-emitting surface 10F of the light-emitting element 10 protrudes from the first edge 70ae of the first main surface 70a to the outside of the first main surface 70a.

[0160] This makes it possible to prevent the light emitted from the light emitting element 10 from being blocked by the base 70. In this embodiment, the light emitting element 10 is mounted junction-down, so the distance between the base 70 and the active layer 13 is small. For this reason, the above-described arrangement is particularly effective.

[0161] In the light-emitting device 101 of this embodiment, as in the light-emitting device 1 of embodiment 1, the first main surface 70a has a second edge 70ae2 perpendicular to the first edge 70ae, and the distance D1 between the first edge 70ae and the metal film 50 may be smaller than the distance D2 between the second edge 70ae2 and the metal film 50.

[0162] This makes it easier for the light emitting surface 10F of the light emitting element 10 to protrude from the first edge 70ae.

[0163] In the light-emitting device 101 according to the present embodiment, as in the light-emitting device 1 according to the first embodiment, the base 70 has a first side surface 70e connected to the first main surface 70a at a first edge 70ae. The first side surface 70e may have a region with a smaller surface roughness than the center of the first side surface 70e in a region closer to the first main surface 70a than the center of the first side surface 70e. The base 70 also has a second side surface 70s connected to the first main surface 70a at a second edge 70ae2. The second side surface 70s may have a region with a smaller surface roughness than the center of the second side surface 70s in a region closer to the first main surface 70a than the center of the second side surface 70s.

[0164] This can improve the heat dissipation properties of the base body 70 .

[0165] In the light-emitting device 101 according to this embodiment, the metal film 50 has a thick film portion 50et on the outside of the light-emitting element 10, which is a semiconductor laser element, and the thick film portion 50et is formed in a part of the periphery of the light-emitting element 10, and the thickness of the thick film portion 50et may be thicker than the thickness of the metal film 50 between the light-emitting element 10 and the first main surface 70a.

[0166] This can further improve the heat dissipation of the light emitting element 10. Furthermore, such thick film portion 50et can block part of the leaked light from the side surface 10Sc or the substrate 11 of the semiconductor laminate 10S.

[0167] The manufacturing method of the light-emitting device 101 according to this embodiment includes a coating process of applying a paste 50P having metal microparticles dispersed in a solvent to a plurality of light-emitting element bonding regions 70r on the first main surface 70Ma of the base material 70M, a placement process of arranging a plurality of light-emitting elements 10 in the plurality of light-emitting element bonding regions 70r, respectively, a composite metal film formation process of removing the solvent from the paste 50P and sintering the metal microparticles to form a composite metal film (a plurality of metal films 50), and a division process of dividing the base material 70M after the composite metal film formation process to form a plurality of light-emitting devices 101.

[0168] As a result, similarly to the first embodiment, it is possible to suppress changes in the relative position and posture of the light emitting element 10 with respect to the base 70 when the light emitting device 101 is mounted on the mounting base.

[0169] In the arrangement process of the manufacturing method of the light-emitting device 101 according to this embodiment, the plurality of light-emitting elements 10 may be arranged so that, in a planar view of the first main surface 70Ma, the light-emitting surface 10F of each of the plurality of light-emitting elements 10 extends from the first edge 70Mae of the first main surface 70Ma to the outside of the first main surface 70Ma.

[0170] This can prevent the light emitted from the light emitting element 10 from being blocked by the base 70 .

[0171] The semiconductor laser element collective submount according to this embodiment includes a substrate base material 70M having a first main surface 70Ma, and a composite metal film (plurality of metal films 50) that is a sintered body of metal microparticles and is disposed on the first main surface 70Ma. The first main surface 70Ma has a plurality of semiconductor laser element bonding regions (light-emitting element bonding regions 70r), each of which corresponds to a region where a plurality of semiconductor laser elements (light-emitting elements 10) are bonded, and the plurality of semiconductor laser element bonding regions are arranged in a matrix of m rows by n columns, where m is either 1 or 2 and n is an integer of 2 or greater, and the composite metal film covers the plurality of semiconductor laser element bonding regions.

[0172] Such a semiconductor laser element collective submount can be divided to obtain a plurality of semiconductor laser element submounts or a plurality of semiconductor laser devices. As described above for light-emitting device 101, each of the plurality of semiconductor laser devices can suppress changes in the relative position and attitude of light-emitting element 10 with respect to base 70 when the semiconductor laser device is mounted on a mounting base. Furthermore, the semiconductor laser element collective submount of this embodiment allows a plurality of semiconductor laser element submounts to be manufactured simultaneously, thereby improving the productivity of semiconductor laser element submounts.

[0173] In the method for manufacturing a submount for a light-emitting element according to this embodiment, the plurality of light-emitting element bonding regions 70r may be arranged in a matrix of m rows x n columns, where m is either 1 or 2 and n is an integer greater than or equal to 2.

[0174] This allows the light emitting surfaces 10F of the plurality of light emitting elements 10 to protrude from the first edge 70ae, and prevents the light emitting elements 10 from being positioned on the scribe line in the dividing step, thereby preventing damage to the light emitting elements 10 in the dividing step.

[0175] (Embodiment 3) A light-emitting device according to embodiment 3 and a manufacturing method thereof will be described. The light-emitting device according to this embodiment differs from the light-emitting device 1 according to embodiment 2 mainly in that the base 70 has a base recess. Below, the light-emitting device according to this embodiment and the like will be described, focusing on the differences from embodiment 2.

[0176] [3-1. Overall Configuration of Light-Emitting Device] The overall configuration of the light-emitting device according to the present embodiment will be described with reference to FIG. 23. FIG. 23 is a schematic diagram showing the overall configuration of a light-emitting device 201 according to the present embodiment. FIG. 23 shows a plan view (a) and a cross-sectional view (b). The plan view (a) is a plan view of the first main surface 70a of the base 70 in a plan view. The cross-sectional view (b) of FIG. 23 shows a cross section taken along line XXIIIB-XXIIIB shown in the plan view (a) of FIG. 23.

[0177] 23 , light-emitting device 201 includes light-emitting element 10, a base 270, and a metal film 50. In this embodiment, light-emitting device 201 further includes a base electrode 60, a relay electrode 71, a first electrode 20, and a second electrode 40. Light-emitting device 201 is also an example of a submount for a light-emitting element that includes base 70 and metal film 50. In this embodiment, as in embodiment 1, light-emitting element 10 is a semiconductor laser element. Therefore, light-emitting device 201 is both an example of a semiconductor laser device and an example of a submount for a semiconductor laser element.

[0178] In the light-emitting device 201 according to the present embodiment, the light-emitting element 10 is mounted in a junction-down manner, i.e., the second electrode 40 disposed on the semiconductor stack 10S is joined to the base 270 via the metal film 50 or the like.

[0179] The base 270 according to this embodiment differs from the base 70 according to the second embodiment in that it has a notch 79 along the first edge 70ae of the first main surface 70a. The notch 79 is disposed between the first main surface 70a and the first side surface 70e and is a portion recessed relative to the first main surface 70a and the first side surface 70e. In this embodiment, the first side surface 70e of the base 270 is connected to the first edge 70ae via the notch 79. The notch 79 may be longer than the protrusion length of the light emitting surface 10F, which is set to 10 μm or more and 30 μm or less in this example. Since the protrusion length is changed depending on the length of the light emitting element, the notch 79 may also be adjusted appropriately within a range of 5 μm or more and 70 μm or less.

[0180] A portion of the base electrode 60 according to this embodiment may be disposed in the cutout portion 79. In the example shown in Fig. 23, the base electrode 60 covers a portion of the cutout portion 79, but it may also cover the entire cutout portion 79.

[0181] The metal film 50 according to this embodiment has a first recess 50r above the notch 79. The first recess 50r is a portion recessed with respect to the upper surface of the metal film 50 (the surface on which the light emitting element 10 is disposed).

[0182] The light emitting surface 10F of the light emitting element 10 according to the present embodiment is disposed above the notch portion 79. In the present embodiment, the metal film 50 has the first recess 50r above the notch portion 79, and the light emitting surface 10F of the light emitting element 10 is disposed above the notch portion 79, so that the metal film 50 can be prevented from being disposed in front of the light emitting surface 10F. Therefore, it is possible to prevent the metal film 50 from blocking the emitted light.

[0183] Furthermore, in the present embodiment, the light emitting surface 10F of the light emitting element 10 can be disposed above the notch portion 79, so that in a plan view of the first main surface 70a of the base 270, the light emitting surface 10F protrudes from the first edge 70ae of the first main surface 70a but does not protrude from the outer edge of the base 270. Therefore, the entire light emitting element 10 can be contained above the base 270 while preventing the emitted light of the light emitting element 10 from being blocked by the base 270. This makes it possible to use the first side surface 70e as a dividing surface when dividing the base 270 from the base base material 70M, while preventing damage to the light emitting element 10.

[0184] [3-2. Manufacturing Method of Light-Emitting Device] An example of a manufacturing method of the light-emitting device 201 according to the present embodiment will be described with reference to FIGS. 24 to 28. Each of FIGS. 24 to 28 is a schematic diagram showing each step of the manufacturing method of the light-emitting device 201 according to the present embodiment. Each of FIGS. 24 to 28 includes a plan view (a) and a cross-sectional view (b). Each plan view (a) is a plan view of the first main surface 70Ma (or the first main surface 70a) of the base base material 70M (or the base 270). The cross-sectional views (b) of Figures 24, 25, 26, 27, and 28 respectively show cross sections along line XXIVB-XXIVB shown in the plan view (a) of Figure 24, line XXVB-XXVB shown in the plan view (a) of Figure 25, line XXVIB-XXVIB shown in the plan view (a) of Figure 26, line XXVIIB-XXVIIB shown in the plan view (a) of Figure 27, and line XXVIIIB-XXVIIIB shown in the plan view (a) of Figure 28.

[0185] As shown in Fig. 24, a base recess 70Mt is formed on the first main surface 70Ma of the base base material 70M (base recess forming step). The base recess 70Mt formed on the base base material 70M is also referred to as a base base material recess. In this embodiment, the base recess 70Mt is a recess having a rectangular groove shape extending linearly. In this embodiment, a plurality of base recesses 70Mt are formed that are parallel to each other.

[0186] 25 , as in the first embodiment, a base electrode 60 and a relay electrode 71 are formed on the first main surface 70Ma of the base base material 70M. Furthermore, a paste 50P is applied to the plurality of light-emitting element bonding regions 70r on the first main surface 70Ma (application process). The base electrode 60 is formed in a region including the plurality of light-emitting element bonding regions 70r on the first main surface 70Ma. The paste 50P is applied onto the base electrode 60.

[0187] The plurality of light-emitting element bonding regions 70r are arranged along the base recess 70Mt. In this embodiment, the plurality of light-emitting element bonding regions 70r are arranged in a matrix of multiple rows and multiple columns. The longitudinal direction of each of the plurality of light-emitting element bonding regions 70r intersects with the extending direction of the base recess 70Mt. Each of the plurality of light-emitting element bonding regions 70r is an example of a semiconductor laser element bonding region.

[0188] Next, as shown in FIG. 26 , the plurality of light-emitting elements 10 are respectively arranged in the plurality of light-emitting element bonding regions 70r (arrangement process). In this embodiment, a first electrode 20 and a second electrode 40 are arranged on each of the plurality of light-emitting elements 10. The plurality of light-emitting elements 10 are arranged so that the second electrodes 40 arranged on the plurality of light-emitting elements 10 contact the paste 50P. Each of the plurality of light-emitting elements 10 according to this embodiment is a semiconductor laser element. In the arrangement process, in a plan view of the first main surface 70Ma, the light-emitting surface 10F of each of the plurality of light-emitting elements 10 is arranged above the base recess 70Mt of the first main surface 70Ma. This prevents the base 270 from blocking the emitted light from the plurality of light-emitting elements 10. In this embodiment, the light-emitting elements 10 are mounted junction-down, so the distance between the base 270 and the active layer 13 is small. For this reason, the above arrangement is particularly effective.

[0189] 27, the solvent is removed from the paste 50P, and the metal particles are sintered to form a composite metal film (composite metal film formation process). In this embodiment, a plurality of patterned metal films 50 are formed as an example of a composite metal film. Accordingly, the light emitting element 10 can be bonded to the base 70 by the metal films 50. Furthermore, each of the plurality of metal films 50 according to this embodiment has a first recess 50r above the base recess 70Mt. This makes it possible to prevent the metal films 50 from blocking the light emitted from the plurality of light emitting elements 10.

[0190] A component including a substrate base material 70M and a composite metal film (plurality of metal films 50) obtained by such a composite metal film formation process is an example of an aggregate submount for a light-emitting element, and also an example of an aggregate submount for a semiconductor laser element.

[0191] Next, the base material 70M is divided into a plurality of light-emitting devices 201 (division step). In the present embodiment, at the start of the division step, as described above, the composite metal film includes a plurality of metal films 50. The plurality of metal films 50 respectively cover a plurality of light-emitting element bonding regions 70r.

[0192] The dividing step according to this embodiment includes a scribing step of forming a scribe line between two adjacent light-emitting element bonding regions 70r among the plurality of light-emitting element bonding regions 70r, as shown by the thick dashed line in FIG. 27 . In this embodiment, the scribe line is formed in the base recess 70Mt. After the scribing step, the base base material 70M is divided along the scribe line to form a plurality of light-emitting devices 201, as shown in FIG. 28 . Note that in this embodiment, the base base material 70M is divided at the base recess 70Mt. As a result, a part of the base recess 70Mt becomes the notch portion 79 of the base 270.

[0193] The light-emitting device 201 can be manufactured as described above. The plurality of light-emitting devices 201 manufactured by the above manufacturing method each include a plurality of light-emitting element bonding regions 70r. Each of the plurality of light-emitting devices 201 according to this embodiment is an example of a submount for a light-emitting element. The dividing step according to this embodiment is also an example of a step of dividing the base base material 70M to obtain a plurality of submounts for a light-emitting element. Furthermore, each of the plurality of submounts for a light-emitting element according to this embodiment is also an example of a submount for a semiconductor laser element to which a semiconductor laser element is bonded.

[0194] [3-3. Effects, etc.] As described above, the light-emitting device 201 according to the present embodiment is an example of a semiconductor laser device, and includes the base 270 having the first main surface 70 a, the metal film 50 which is a sintered body of metal fine particles and is disposed on the first main surface 70 a, and the light-emitting element 10 which is a semiconductor laser element bonded to the metal film 50.

[0195] As a result, similar to the light emitting device 101 according to the second embodiment, changes in the relative position and posture of the light emitting element 10 with respect to the base 70 can be suppressed when the light emitting device 201 is mounted on a mounting base.

[0196] In the light-emitting device 201 of this embodiment, similar to the light-emitting device 101 of embodiment 2, the light-emitting element 10 is arranged so that, when viewed in plan from the first main surface 70a, the light-emitting surface 10F of the light-emitting element 10 extends from the first edge 70ae of the first main surface 70a to the outside of the first main surface 70a.

[0197] This can prevent the light emitted from the light emitting element 10 from being blocked by the base 70 .

[0198] In the light-emitting device 201 according to this embodiment, the base 270 has a notch 79 along the first edge 70 ae of the first main surface 70 a, and the metal film 50 has a first recess 50 r above the notch 79 .

[0199] This can prevent the metal film 50 from blocking the light emitted from the light emitting element 10 .

[0200] The semiconductor laser element collective submount according to this embodiment includes a substrate base material 70M having a first main surface 70Ma, and a composite metal film (a plurality of metal films 50) that is a sintered body of metal fine particles and is disposed on the first main surface 70Ma. The first main surface 70Ma has a plurality of semiconductor laser element bonding regions (light-emitting element bonding regions 70r), each of which corresponds to a region where a plurality of semiconductor laser elements (light-emitting elements 10) are bonded, and the plurality of semiconductor laser element bonding regions are arranged in a matrix of multiple rows and multiple columns, and the composite metal film covers the plurality of semiconductor laser element bonding regions.

[0201] This allows a plurality of submounts for semiconductor laser devices to be manufactured at the same time, similar to the semiconductor laser device collective submount according to the second embodiment, thereby increasing the productivity of submounts for semiconductor laser devices.

[0202] In the semiconductor laser element collective submount according to this embodiment, the base material 70M has a base recess 70Mt on the first main surface 70Ma, which extends along the row direction of the multiple semiconductor laser element bonding regions (light-emitting element bonding regions 70r), and the composite metal film (multiple metal films 50) has a first recess 50r on the base recess 70Mt.

[0203] This can prevent the metal film 50 from blocking the light emitted from the light emitting element 10 .

[0204] The manufacturing method of the light-emitting device 201 of this embodiment, similar to the manufacturing method of the light-emitting device 1 of embodiment 1, includes the following steps: a coating process of applying a paste 50P having metal microparticles dispersed in a solvent to a plurality of light-emitting element bonding regions 70r on the first main surface 70Ma of the base material 70M; an arrangement process of arranging a plurality of light-emitting elements 10 in the plurality of light-emitting element bonding regions 70r, respectively; a composite metal film formation process of forming a composite metal film (a plurality of metal films 50) made of metal microparticles by removing the solvent from the paste 50P; and a division process of dividing the base material 70M after the composite metal film formation process into a plurality of light-emitting devices.

[0205] This makes it possible to suppress changes in the relative position and orientation of light emitting element 10 with respect to base 270 when light emitting device 201 is mounted on a mounting base, similar to the method for manufacturing a light emitting element submount according to the first embodiment.

[0206] Furthermore, similar to the manufacturing method of the light-emitting device 1 according to embodiment 1, the manufacturing method of the light-emitting device 201 according to this embodiment allows multiple light-emitting devices 201 to be manufactured simultaneously, thereby increasing the productivity of the light-emitting device 201.

[0207] In the manufacturing method of the light-emitting device 201 according to the present embodiment, the base base material 70M has a base recess 70Mt formed on the first main surface 70Ma, and the composite metal film (the plurality of metal films 50) has a first recess 50r above the base recess 70Mt. In the arranging step, the light emission surface 10F of each of the plurality of light-emitting elements 10 may be arranged above the base recess 70Mt, and in the dividing step, the base base material 70M may be divided at the base recess 70Mt.

[0208] This can prevent the light emitted from the light emitting element 10 from being blocked by the base 270 and the metal film 50 .

[0209] The method for manufacturing a submount for a light-emitting element according to this embodiment, like the method for manufacturing a submount for a light-emitting element according to embodiment 1, includes the following steps: a coating process for applying a paste 50P having metal microparticles dispersed in a solvent to the first main surface 70Ma of a base material 70M; a composite metal film formation process for removing the solvent from the paste 50P and sintering the metal microparticles to form a composite metal film (multiple metal films 50); and a division process for dividing the base material 70M after the composite metal film formation process to form multiple submounts for light-emitting elements.

[0210] This makes it possible to suppress changes in the relative position and orientation of light emitting element 10 with respect to base 270 when light emitting device 201 is mounted on a mounting base, similar to the method for manufacturing a light emitting element submount according to the first embodiment.

[0211] In the manufacturing method of a submount for a light-emitting element according to this embodiment, at the start of the dividing process, a base recess 70Mt is formed on the first main surface 70Ma of the base base material 70M, and the composite metal film (multiple metal films 50) has a first recess 50r on the base recess 70Mt.

[0212] This can prevent the metal film 50 from blocking the light emitted from the plurality of light emitting elements 10 .

[0213] [3-4. Modified Examples of Base Recess] The cross-sectional shape of the base recess 70Mt in this embodiment is a rectangular groove, but the cross-sectional shape of the base recess 70Mt is not limited to this. Modified examples of the cross-sectional shape of the base recess 70Mt will be described below with reference to Figures 29 to 31. Figures 29 to 31 are schematic cross-sectional views showing modified examples of the cross-sectional shape of the base recess 70Mt.

[0214] The cross-sectional shape of the base recess 70Mt may be U-shaped as shown in FIG. 29, V-shaped as shown in FIG. 30, or a right-angled triangle as shown in FIG. 31.

[0215] [3-5. Modified Examples of Metal Film] Modified examples of the metal film 50 according to the present embodiment will be described. The shape of the metal film in a cross section perpendicular to the propagation direction of light emitted by the light-emitting element 10 is not limited to the shape of the metal film 50 according to the second embodiment described with reference to FIG. 14. Modified examples of the cross-sectional shape of the metal film in a cross section perpendicular to the propagation direction of light emitted by the light-emitting element 10 will be described below with reference to FIGS. 32 to 34. FIGS. 32 to 34 are schematic cross-sectional views showing the cross-sectional shape of a light-emitting device according to a modified example of the present embodiment. FIGS. 32 to 34 show cross sections perpendicular to the propagation direction of light emitted by the light-emitting element 10.

[0216] A light-emitting device 201a according to the first modification shown in Fig. 32 includes a metal film 250a. As shown in Fig. 32, the metal film 250a includes an extending portion 250ae, and the surface of the extending portion 250ae may have a concave shape.

[0217] A light-emitting device 201b according to the second modification shown in Fig. 33 includes a metal film 250b. As shown in Fig. 33, the metal film 250b includes an extension portion 250be, and the surface of the extension portion 250be has a concave shape, and the metal film 250b may not include a thick film portion.

[0218] A light-emitting device 201c according to Modification 3 shown in Fig. 34 includes a metal film 250c. As shown in Fig. 34, the surface of the end portion of the metal film 250c may have a concave shape, and the surface may be recessed inward from the stack recess 10T.

[0219] Furthermore, the shape of the metal film in a cross section parallel to the propagation direction of light emitted by the light emitting element 10 and the stacking direction of the semiconductor stack 10S is not limited to the shape of the metal film 50 shown in FIG. 23. Modified examples of the cross-sectional shape of the metal film in a cross section parallel to the propagation direction of light emitted by the light emitting element 10 and the stacking direction of the semiconductor stack 10S will be described below with reference to FIGS. 35 to 38. FIGS. 35 to 38 are schematic cross-sectional views showing the cross-sectional shapes of light-emitting devices according to modified examples of this embodiment. FIGS. 35 to 38 show cross sections perpendicular to the propagation direction of light emitted by the light emitting element 10 and the stacking direction of the semiconductor stack 10S.

[0220] A light-emitting device 201d according to Modification 4 shown in Fig. 35 includes a metal film 250d. As shown in Fig. 35, the metal film 250d has a first recess 250dr above a cutout portion 79 of a base 270, and the metal film 250d may cover at least a portion of the cutout portion 79. The metal film 250d may cover at least a portion of the cutout portion 79 via the base electrode 60. This makes it easier for heat generated in the light-emitting element 10 to dissipate to the base 270 via the metal film 250d.

[0221] 35 , the metal film 250d may have a thick film portion 250det at a position facing the rear end face 10R on the back side of the light emitting surface 10F of the light emitting element 10. This can improve the heat dissipation properties of the metal film 250d.

[0222] A light-emitting device 201e according to Modification 5 shown in Fig. 36 includes a metal film 250e. As shown in Fig. 36, the metal film 250e has a first recess 250er above the cutout portion 79 of the base 270. As shown in Fig. 36, the end face of the metal film 250e on the light emitting surface 10F side may have a concave shape and may be recessed inward from the outer edge of the second electrode 40. This further prevents the metal film 250e from blocking the emitted light of the light-emitting element 10.

[0223] As shown in FIG. 36, the surface of the metal film 250e may have a concave shape at a position facing the rear end face 10R on the back side of the light emitting surface 10F of the light emitting element 10.

[0224] A light-emitting device 201f according to Modification 6 shown in Fig. 37 includes a metal film 250f. As shown in Fig. 37, the metal film 250f has a first recess 250fr above the cutout portion 79 of the base 270. As shown in Fig. 37, both end faces of the metal film 250f on the light-emitting surface 10F side and the rear end face 10R side may have a concave shape and may be recessed inward from the outer edge of the second electrode 40. This can further prevent the metal film 250f from blocking the emitted light of the light-emitting element 10, as in the light-emitting device 201e according to Modification 5.

[0225] A light-emitting device 201g according to Variation 7 shown in Fig. 38 includes a metal film 250g. As shown in Fig. 38, the metal film 250g has a first recess 250gr above the cutout portion 79 of the base 270. As shown in Fig. 38, both end faces of the metal film 250g on the light-emitting surface 10F side and the rear end face 10R side have a convex shape and do not include a thick film portion. Such a metal film 250g can prevent the metal film 250g from blocking the light emitted from the light-emitting element 10 and can improve the heat dissipation properties of the metal film 250g.

[0226] (Fourth Embodiment) A light-emitting device according to the fourth embodiment will be described. In this embodiment, the light-emitting device is mounted on a mounting base. Hereinafter, mounting modes of the light-emitting device according to this embodiment will be described with reference to FIGS. 39 to 42. FIG. 39 is a schematic perspective view showing a mounting method of a light-emitting device 1d according to this embodiment. FIG. 39 also shows a mounting base 90 on which the light-emitting device 1d is mounted. FIG. 40 is a schematic perspective view showing the configuration of a light-emitting module 5d according to this embodiment. FIG. 41 is a schematic perspective view showing a mounting method of a light-emitting device 101 according to a modification of this embodiment. FIG. 41 also shows a mounting base 190 on which the light-emitting device 101 is mounted. FIG. 42 is a schematic perspective view showing the configuration of a light-emitting module 105 according to a modification of this embodiment.

[0227] 39 differs from the light-emitting device 1 according to embodiment 1 in that a bonding member 80 is disposed on the first side surface 70e of the base 70, but is the same in other respects. The bonding member 80 is, for example, a solder such as AuSn. Note that a metal layer similar to the base electrode 60 may be further disposed between the bonding member 80 and the first side surface 70e.

[0228] 39 is a base on which the light emitting device 1d is mounted. The mounting base 90 may be, for example, a slider in a thermally assisted hard disk drive.

[0229] When mounting the light emitting device 1d on the mounting base 90, as shown in Fig. 39 , the light emitting device 1d is placed on the mounting base 90 so that the bonding members 80 are in contact with the mounting base 90, and the bonding members 80 are heated to melt the bonding members 80. Next, the heating of the bonding members 80 is stopped and the bonding members 80 are allowed to cool, thereby mounting the light emitting device 1d on the mounting base 90. This allows the manufacture of a light emitting module 5d as shown in Fig. 40 . The light emitting module 5d includes the light emitting device 1d and the mounting base 90.

[0230] When the light-emitting device 1d is mounted on the mounting base 90, the heating temperature is approximately 200° C. or higher and 300° C. or lower, so the metal film 50 of the light-emitting device 1d does not remelt. Therefore, changes in the position and posture of the light-emitting element 10 relative to the base 70 when the light-emitting device 1d is mounted on the mounting base 90 can be suppressed.

[0231] 41 is a light-emitting device 101 according to embodiment 2. A metal layer similar to the base electrode 60 may be further disposed on the second main surface 70b of the base 70 of the light-emitting device 101.

[0232] 41 is a base on which the light emitting device 101 is mounted. The mounting base 190 may be, for example, a heat sink. The material of the heat sink may be Cu, a Cu alloy, an Fe—Ni—Co alloy, Al, or the like. A bonding member 180 is disposed on the mounting base 190. The bonding member 180 is, for example, a solder such as AuSn.

[0233] When mounting the light-emitting device 101 on the mounting base 190, as shown in Fig. 41 , the light-emitting device 101 is placed on the mounting base 190 so that the second main surface 70b of the base 70 of the light-emitting device 101 is in contact with the bonding member 180, and the bonding member 180 is heated to melt the bonding member 180. Next, the heating of the bonding member 180 is stopped and the bonding member 180 is allowed to cool, thereby mounting the light-emitting device 101 on the mounting base 190. This allows the manufacture of a light-emitting module 105 as shown in Fig. 42 . The light-emitting module 105 includes the light-emitting device 101, the mounting base 190, and the bonding member 180.

[0234] When mounting the light-emitting device 101 on the mounting base 190, the heating temperature is approximately 200° C. or higher and 300° C. or lower, so the metal film 50 of the light-emitting device 101 does not re-melt. Therefore, changes in the relative position and orientation of the light-emitting element 10 with respect to the base 70 when the light-emitting device 101 is mounted on the mounting base 190 can be suppressed.

[0235] (Other Embodiments) While the present disclosure has been described above based on the embodiments and modifications, the present disclosure is not limited to these embodiments and modifications. As long as they do not deviate from the gist of the present disclosure, various modifications that a person skilled in the art could conceive of to the embodiments and other forms constructed by combining some of the components of the embodiments and modifications are also included in the scope of the present disclosure.

[0236] For example, in the above-described embodiments and modifications, the paste 50P is patterned when it is applied, but it may be patterned after it is applied.

[0237] Furthermore, the above-described embodiments can be modified, substituted, added, omitted, and the like in various ways within the scope of the claims or their equivalents.

[0238] The light-emitting device according to the present disclosure is particularly useful as a high-brightness, high-power laser light source, such as a laser light source for processing, a laser light source for displays, or a laser light source for medical use.

[0239] 1, 1a, 1b, 1c, 1d, 101, 201, 201a, 201b, 201c, 201d, 201e, 201f, 201g Light-emitting device 5d, 105 Light-emitting module 10 Light-emitting element 10F Light-emitting surface 10R Rear end face 10S Semiconductor laminate 10Sa Opposing surface 10Sb Rear surface 10Sc Side surface 10T Laminate recess 11 Substrate 12 First semiconductor layer 13 Active layer 14 Second semiconductor layer 14R Ridge stripe 14T Groove 14W Raised portion 15 Insulating film 20 First electrode 21, 42 Adhesion layer 22, 43 Element bonding layer 40 Second electrode 41 Ohmic electrode layer 50, 50a, 50b, 250a, 250b, 250c, 250d, 250e, 250f, 250g Metal film 50cm Highly filled part 50e, 50ae, 50be, 250ae, 250be Extension part 50et, 250det Thick film part 50P Paste 50r, 250dr, 250er, 250fr, 250gr First recess 60 Substrate electrode 61, 72 Substrate adhesion layer 62, 73 Substrate bonding layer 70, 270 Substrate 70a, 70Ma First principal surface 70ae, 70Mae First edge 70ae2 Second edge 70b Second principal surface 70e First side 70F Altered part 70M Base material 70Mt: Base recess 70r: Light emitting element bonding region 70s: Second side surface 71: Relay electrode 79: Notched portion 80, 180: Bonding member 90, 190: Mounting base

Claims

1. a substrate having a first major surface; a metal film disposed on the first main surface and being a sintered body of metal fine particles; an edge-emitting semiconductor laser element bonded to the metal film, the semiconductor laser element is disposed such that, in a plan view of the first main surface, a light emission surface of the semiconductor laser element protrudes outward from a first edge of the first main surface, the metal film has a thick film portion on the outer side of the semiconductor laser element, the thick film portion is formed in a part of the periphery of the semiconductor laser element, The thickness of the thick film portion is greater than the thickness of the metal film between the semiconductor laser element and the first main surface. Semiconductor laser device.

2. a substrate having a first major surface; a metal film disposed on the first main surface and being a sintered body of metal fine particles; an edge-emitting semiconductor laser element bonded to the metal film, the semiconductor laser element is disposed such that, in a plan view of the first main surface, a light emission surface of the semiconductor laser element protrudes outward from a first edge of the first main surface, the first major surface has a second edge perpendicular to the first edge; The distance between the first edge and the metal film is smaller than the distance between the second edge and the metal film. Semiconductor laser device.

3. the base has a notch along the first edge of the first main surface, The metal film has a first recess above the notch.

3. The semiconductor laser device according to claim 1.

4. the first major surface has a second edge perpendicular to the first edge; The distance between the first edge and the metal film is smaller than the distance between the second edge and the metal film.

2. The semiconductor laser device according to claim 1.

5. the base has a first side surface connected to the first main surface at the first edge; The first side surface has a region closer to the first main surface than the center of the first side surface, the region having a surface roughness smaller than that of the center of the first side surface.

5. The semiconductor laser device according to claim 1, 2 or 4.

6. the first major surface has a second edge perpendicular to the first edge; the base has a second side surface connected to the first main surface at the second edge, The second side surface has a region closer to the first main surface than the center of the second side surface, the region having a surface roughness smaller than that of the center of the second side surface.

5. The semiconductor laser device according to claim 1, 2 or 4.

7. The thick film portion and the semiconductor laser element are spaced apart.

5. The semiconductor laser device according to claim 1.

8. The thick film portion is not disposed in a region facing the light emitting surface of the semiconductor laser element.

5. The semiconductor laser device according to claim 1.

9. a substrate base having a first major surface; a composite metal film disposed on the first main surface and being a sintered body of metal fine particles; the first main surface has a plurality of semiconductor laser element bonding regions; the plurality of semiconductor laser element bonding regions respectively correspond to regions where a plurality of semiconductor laser elements are bonded; the plurality of semiconductor laser element bonding regions are arranged in a matrix of m rows and n columns, where m is 1 or 2 and n is an integer of 2 or more; the composite metal film covers the plurality of semiconductor laser element bonding regions; the base base material has a base base material recess on the first main surface, the base base material recess extending along a row direction of the plurality of semiconductor laser element bonding regions, The composite metal film has a first recess on the substrate base recess. Submount assembly for semiconductor laser elements.

10. a coating step of coating a paste in which metal fine particles are dispersed in a solvent onto a plurality of light emitting element bonding regions on a first main surface of the base base material; a placement step of placing a plurality of light emitting elements in the plurality of light emitting element bonding regions, respectively; a composite metal film forming step of removing the solvent from the paste and sintering the metal fine particles to form a composite metal film; a dividing step of dividing the base material into a plurality of light-emitting devices after the composite metal film forming step, each of the plurality of light-emitting elements is a semiconductor laser element; the base substrate has a base substrate recess formed on the first main surface, the composite metal film has a first recess above the substrate base recess; In the arranging step, a light emitting surface of each of the plurality of light emitting elements is arranged above the recess of the base material, In the dividing step, the base base material is divided at the recessed portion of the base base material. A method for manufacturing a light-emitting device.

11. the first main surface includes a plurality of light-emitting element bonding regions; the plurality of light emitting element bonding regions respectively correspond to regions to which the plurality of light emitting elements are bonded; At the start of the dividing step, the composite metal film includes a plurality of patterned metal films; The plurality of light emitting devices each include the plurality of light emitting element junction regions. The method for manufacturing a light-emitting device according to claim 10.

12. In the arranging step, the plurality of light-emitting elements are arranged such that, in a plan view of the first main surface, a light-emitting surface of each of the plurality of light-emitting elements protrudes from a first edge of the first main surface to the outside of the first main surface. A method for manufacturing a light-emitting device according to claim 10 or 11.

13. a coating step of coating a paste in which metal fine particles are dispersed in a solvent onto a first main surface of a substrate base material; a composite metal film forming step of removing the solvent from the paste and sintering the metal fine particles to form a composite metal film; a dividing step of dividing the base material into a plurality of light-emitting element submounts after the composite metal film forming step, At the start of the dividing step, a base base material recess is formed on the first main surface, The composite metal film has a first recess on the substrate base recess. A method for manufacturing a submount for a light-emitting element.

14. Each of the plurality of light-emitting element submounts is a semiconductor laser element submount to which a semiconductor laser element is bonded. The method for manufacturing the submount for a light-emitting element according to claim 13 .

15. the first main surface includes a plurality of light-emitting element bonding regions; the plurality of light emitting element bonding regions respectively correspond to regions to which a plurality of light emitting elements are bonded; At the start of the dividing step, the composite metal film includes a plurality of patterned metal films; the plurality of metal films respectively cover the plurality of light-emitting element junction regions; The plurality of light-emitting element submounts each include the plurality of light-emitting element bonding regions. A method for manufacturing the submount for a light-emitting element according to claim 13 or 14.

16. In the application step, the paste is patterned when the paste is applied. The method for manufacturing the submount for a light-emitting element according to claim 15 .

17. each of the plurality of light-emitting element submounts is a semiconductor laser element submount to which a semiconductor laser element is bonded; The plurality of light-emitting element bonding regions are arranged in a matrix of m rows and n columns, where m is 1 or 2 and n is an integer of 2 or more. The method for manufacturing the submount for a light-emitting element according to claim 15 .

18. The dividing step includes a scribing step of forming a scribe line between two adjacent light emitting element bonding regions among the plurality of light emitting element bonding regions. The method for manufacturing the submount for a light-emitting element according to claim 15 .

19. In the scribing step, a modified portion is formed inside the base material by using a laser beam, thereby forming the scribe line inside the base material. The method for manufacturing the submount for a light-emitting element according to claim 18 .