Target for ion plating

Abstract

This target for ion plating comprises a disc-shaped body section. The body section has a use surface that evaporates during film formation, and a back surface on the reverse side from the use surface. The area of the back surface is larger than the area of the use surface.

Description

Ion plating targets

[0001] The disclosed embodiments relate to an ion plating target.

[0002] Conventionally, techniques for forming a functional thin film on the surface of an object such as a cutting tool have been disclosed, and in these conventional techniques, the functional thin film can be formed on the object by a physical vapor deposition method such as an arc ion plating method (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2003-268544

[0004] An ion plating target according to one aspect of the present invention includes a disk-shaped main body having a usable surface that evaporates during film formation and a back surface opposite the usable surface, the back surface having a larger area than the usable surface.

[0005] Fig. 1 is a schematic diagram showing an example of the configuration of a film forming apparatus according to an embodiment. Fig. 2 is a perspective view showing an example of the configuration of a target according to an embodiment. Fig. 3 is a cross-sectional view showing an example of the configuration of a target according to an embodiment. Fig. 4 is a cross-sectional view showing an example of a target mounting mechanism according to an embodiment. Fig. 5 is an enlarged cross-sectional view showing an example of the configuration of a target according to an embodiment. Fig. 6 is a cross-sectional view showing an example of the configuration of a target according to another embodiment.

[0006] Hereinafter, with reference to the accompanying drawings, an embodiment of an ion plating target disclosed in the present application will be described. Note that the present invention is not limited to the following embodiment. Furthermore, each embodiment can be appropriately combined within a range that does not cause contradiction in processing content. Furthermore, the same parts in each of the following embodiments are given the same reference numerals, and duplicated explanations will be omitted.

[0007] <Film Forming Apparatus> First, the configuration of a film forming apparatus 1 to which a target 33 according to an embodiment can be attached will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the configuration of the film forming apparatus 1 according to an embodiment.

[0008] As shown in FIG. 1, the film forming apparatus 1 according to the embodiment includes a chamber 10 , an exhaust unit 20 , an evaporation unit 30 , a workpiece holder 40 , and a gas supply unit 50 .

[0009] The chamber 10 is a container that accommodates a plurality of workpieces W. The workpieces W are, for example, cutting tools. Note that the workpieces W of the present disclosure are not limited to cutting tools. The exhaust unit 20 evacuates the interior of the chamber 10. The interior of the chamber 10 is maintained in a vacuum state by the exhaust unit 20.

[0010] Evaporation unit 30 evaporates target 33, which is a coating material. Evaporation unit 30 has an arc power supply unit 31, an arc cathode 32, and target 33. Arc power supply unit 31 is a power supply circuit that supplies a discharge current to arc cathode 32.

[0011] Arc cathode 32 holds target 33 and generates a vacuum arc discharge between itself and the inner wall of chamber 10 using power supplied from arc power supply 31. Arc cathode 32 and target 33 are located, for example, on a side wall of chamber 10. Furthermore, a use surface 34a (see FIG. 2) of target 33 is exposed inside chamber 10 and is positioned so as to face multiple workpieces W.

[0012] When vacuum arc discharge is initiated by the evaporation unit 30, a molten region called an arc spot having a diameter of several μm is generated on the use surface 34 a of the target 33. A high-density current is concentrated in this arc spot, and the use surface 34 a of the target 33 is instantly melted and evaporated. This vacuum arc discharge forms a coating containing components of the target 33 on the surfaces of the multiple workpieces W.

[0013] 1 shows an example in which two pairs of arc power supply units 31, arc cathodes 32, and targets 33 are located in film formation apparatus 1, but the present disclosure is not limited to such an example. For example, film formation apparatus 1 may have one pair of arc power supply units 31, arc cathodes 32, and targets 33 located therein, or three or more pairs of arc power supply units 31, arc cathodes 32, and targets 33 located therein.

[0014] The workpiece holding unit 40 holds a plurality of workpieces W. The workpiece holding unit 40 has a first table 41, a plurality of second tables 42, a plurality of columnar portions 43, a drive unit 44, and a bias power supply unit 45.

[0015] The first table 41 is, for example, disk-shaped and rotatably supported at the bottom of the chamber 10. The second table 42 is, for example, disk-shaped and rotatably supported on the upper surface of the first table 41. The columnar portion 43 is, for example, column-shaped and rotatably supported on the upper surface of the second table 42, and supports a plurality of workpieces W.

[0016] The driving unit 44 rotates the first table 41 relative to the chamber 10. The driving unit 44 also rotates the second table 42 relative to the first table 41. The driving unit 44 also rotates the columnar portion 43 relative to the second table 42.

[0017] As a result, a coating containing components of the target 33 is formed approximately uniformly on the entire surface of all of the workpieces W supported by the multiple pillar-shaped portions 43. The bias power supply unit 45 applies a negative potential to the multiple workpieces W via the first table 41, the second table 42, and the pillar-shaped portions 43.

[0018] The gas supply unit 50 supplies a process gas for forming a coating inside the chamber 10. The gas supply unit 50 includes, for example, a plurality of mass flow controllers 51.

[0019] The film forming apparatus 1 also includes a control device 2. The control device 2 is, for example, a computer, and includes a control unit 3 and a storage unit 4. The storage unit 4 stores programs that control various processes executed in the film forming apparatus 1. The control unit 3 controls the operation of the film forming apparatus 1 by reading and executing the programs stored in the storage unit 4.

[0020] The program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 4 of the control device 2. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0021] Although not shown in FIG. 1, the film forming apparatus 1 according to the embodiment may be provided with a heating section for heating multiple workpieces W to a desired temperature, or an etching section for etching and cleaning the surface of the workpieces W using Ar plasma or the like.

[0022] <Details of the Target> Next, details of the target 33 according to the embodiment will be described with reference to Fig. 2 to Fig. 6. Fig. 2 is a perspective view showing an example of the configuration of the target 33 according to the embodiment, and Fig. 3 is a cross-sectional view showing an example of the configuration of the target 33 according to the embodiment. The target 33 is an example of an ion plating target.

[0023] 2, the target 33 according to the embodiment includes a substantially disk-shaped main body 34. The main body 34 is made of a conductive material, and contains, for example, various metal elements and carbon (C).

[0024] 2, the main body 34 of the target 33 according to this embodiment has a use surface 34a and a back surface 34b. The use surface 34a is one of the main surfaces of the main body 34 and is positioned so as to face the multiple workpieces W within the film forming apparatus 1. The back surface 34b is the other main surface of the main body 34 and is positioned opposite the use surface 34a.

[0025] The use surface 34a of the main body 34 according to the embodiment is, for example, substantially circular in plan view and has a diameter L1 as shown in Fig. 3. The back surface 34b of the main body 34 according to the embodiment is, for example, substantially circular in plan view and has a diameter L2.

[0026] The main body 34 according to the embodiment has a first portion 34c and a second portion 34d. The first portion 34c is located on the use surface 34a side and has the same area as the use surface 34a in a plan view. The second portion 34d is located on the back surface 34b side and has the same area as the back surface 34b in a plan view.

[0027] In the embodiment, the area of ​​the rear surface 34b may be larger than the area of ​​the use surface 34a. For example, in the embodiment, the diameter L2 of the rear surface 34b may be larger than the diameter L1 of the use surface 34a.

[0028] As a result, the second portion 34d is larger than the first portion 34c in a plan view, and the peripheral edge of the second portion 34d protrudes laterally like a flange. That is, in this embodiment, by making the second portion 34d larger than the first portion 34c in a plan view, a protrusion 34d1 is formed in the second portion 34d. This allows the target 33 to be easily attached to the arc cathode 32, as shown in FIG. 4 .

[0029] 4 is a cross-sectional view showing an example of an attachment mechanism for the target 33 according to the embodiment. As shown in FIG. 4, in the embodiment, the target 33 can be attached to the arc cathode 32 using an attachment member 35 and a fixing member 36.

[0030] The mounting member 35 is, for example, ring-shaped and configured so that the first portion 34c of the main body 34 can be inserted inside and the protrusion 34d1 of the second portion 34d can be caught and stopped. The mounting member 35 also has a plurality of through holes 35a, into which the plurality of fixing members 36 can be inserted, respectively.

[0031] The fixing member 36 is, for example, a bolt, which can be inserted through the through hole 35 a and can be fixed (screwed) into a screw hole 32 b located on the surface 32 a of the arc cathode 32 .

[0032] In this manner, in the embodiment, the main body 34 of the target 33 has the protrusion 34 d 1 , so that the target 33 can be easily attached to the arc cathode 32 .

[0033] Returning to the description of Figure 3, in the embodiment, the thickness T2 of the second portion 34d of the main body portion 34 may be 2.1 (mm) to 3.5 (mm).

[0034] By making the thickness T2 of the second portion 34d 2.1 (mm) or more, the strength of the protrusion 34d1 in the second portion 34d is improved, and therefore the second portion 34d is less likely to be damaged when the target 33 is fixed using the mounting member 35 (see Figure 4) and the fixing member 36 (see Figure 4).

[0035] Furthermore, by setting the thickness T2 of the second portion 34d to 3.5 (mm) or less, the target 33 can be attached more easily.

[0036] In addition, in the embodiment, the ratio T1 / T2 of the thickness T1 of the first portion 34c to the thickness T2 of the second portion 34d of the main body 34 may be 6.4 or less. That is, in the embodiment, the ratio T2 / T1 of the thickness T2 to the thickness T1 may be 0.16 or more.

[0037] In this manner, by making the thickness T2 of the second portion 34d somewhat larger than the thickness T1 of the first portion 34c, the strength of the protrusion 34d1 of the second portion 34d is improved. Therefore, according to this embodiment, the second portion 34d is less likely to be damaged when the target 33 is fixed using the mounting member 35 (see FIG. 4) and the fixing member 36 (see FIG. 4).

[0038] 5 is an enlarged cross-sectional view showing an example of the configuration of the target 33 according to the embodiment. As shown in FIG. 5, in the embodiment, corners 34d2 and 34d3 of the second portion 34d of the main body 34 may have a chamfered shape. That is, in the embodiment, the corners 34d2 and 34d3 of the second portion 34d may have a rounded shape.

[0039] This makes it difficult for the corners 34d2 and 34d3 of the second portion 34d to be damaged when the target 33 is fixed using the attachment member 35 (see FIG. 4) and the fixing member 36 (see FIG. 4).

[0040] In the example of Figure 5, an example is shown in which both corners 34d2 and 34d3 have a chamfered shape, but the present disclosure is not limited to such an example, and for example, either corner 34d2 or corner 34d3 may have a chamfered shape.

[0041] 4, the back surface 34b of the main body 34 may be cooled during film formation by contacting the front surface 32a of the arc cathode 32. This prevents the temperature of the use surface 34a of the main body 34 from rising excessively, making it possible to form coatings with a stable thickness on multiple workpieces W.

[0042] 4, a flow path may be located inside the arc cathode 32, and a cooling medium such as water may be passed through the flow path. This further reduces an excessive rise in temperature of the use surface 34a of the main body 34, making it possible to form coatings with a more stable thickness on multiple workpieces W.

[0043] 6 is a cross-sectional view showing an example of the configuration of a target 33 according to another embodiment. As shown in Fig. 6, in this another embodiment, a central portion 34a1 of a use surface 34a of a main body 34 may be recessed with respect to a peripheral portion 34a2 of the use surface 34a.

[0044] Generally, the use surface 34a of the main body 34 gradually lowers from the position at the start of use because, as described above, when a coating containing the components of the target 33 is formed on the surface of the workpiece W, the use surface 34a melts and evaporates due to the vacuum arc discharge.

[0045] Generally, the surface 34a in use does not necessarily wear down evenly across the entire surface, but rather the central portion 34a1 wears down more than the peripheral portion 34a2. After some time has passed since the start of use of the target 33, when the central portion 34a1 has become recessed, the film formation process may become stable.

[0046] Therefore, in another embodiment, as shown in FIG. 6, by making the central portion 34a1 recessed from the start of use, the film forming process becomes stable from the start of use.

[0047] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present invention.

[0048] For example, in the above embodiment, an example in which the technology of the present disclosure is applied to the film forming apparatus 1 using the arc ion plating method is shown, but the present disclosure is not limited to such an example. For example, the technology of the present disclosure may be applied to film forming apparatuses using various ion plating methods.

[0049] Furthermore, in the above embodiment, an example has been shown in which the flange-shaped protrusion 34d1 is formed on the target 33, making the back surface 34b larger than the use surface 34a, but the present disclosure is not limited to such an example.

[0050] For example, the target 33 may have a generally trapezoidal cross section, so that the back surface 34b is larger than the use surface 34a. This also allows the attachment member 35 to be hooked onto the side surface of the trapezoid, making it possible to fix the target 33 to the arc cathode 32 without any problems.

[0051] Further advantages and other aspects may readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

[0052] The present technology can also be configured as follows. (1) An ion plating target comprising a disk-shaped main body, the main body having a use surface that evaporates during film formation and a back surface opposite the use surface, the area of ​​the back surface being larger than the area of ​​the use surface. (2) The ion plating target according to (1), the main body having a first portion having the same area as the use surface in a plan view and a second portion having the same area as the back surface in a plan view, the thickness T2 of the second portion being 2.1 (mm) to 3.5 (mm). (3) The ion plating target according to (2), in which T1 / T2 is 6.4 or less, where T1 is the thickness of the first portion. (4) The ion plating target according to (2) or (3), in which corners of the second portion have a chamfered shape. (5) The ion plating target according to any one of (1) to (4), in which the back surface is cooled during film formation. (6) The ion plating target according to any one of (1) to (5), wherein the central portion of the use surface is recessed relative to the peripheral portion of the use surface.

[0053] REFERENCE SIGNS LIST 1 Film forming device 2 Control device 33 Target (an example of an ion plating target) 34 Main body 34a Use surface 34a1 Center 34a2 Peripheral edge 34b Back surface 34c First portion 34d Second portion 34d1 Protruding portion 34d2, 34d3 Corner portions L1, L2 Diameter T1, T2 Thickness

Claims

1. A disk-shaped main body is provided, the main body has a use surface that evaporates during film formation and a back surface opposite to the use surface, The area of ​​the rear surface is larger than the area of ​​the use surface. Ion plating target.

2. the main body portion has a first portion having the same area as the use surface in a plan view and a second portion having the same area as the back surface in a plan view, The thickness T2 of the second portion is 2.1 (mm) to 3.5 (mm). The ion plating target according to claim 1 .

3. When the thickness of the first portion is T1, T1 / T2 is 6.4 or less. The ion plating target according to claim 2 .

4. The corner of the second portion has a chamfered shape. The ion plating target according to claim 2 or 3.

5. The back surface is cooled during film formation. The ion plating target according to any one of claims 1 to 3.

6. The central portion of the use surface is recessed relative to the peripheral portion of the use surface. The ion plating target according to any one of claims 1 to 3.